TWM632517U - Plasma processing device and insulation window - Google Patents
Plasma processing device and insulation window Download PDFInfo
- Publication number
- TWM632517U TWM632517U TW110212736U TW110212736U TWM632517U TW M632517 U TWM632517 U TW M632517U TW 110212736 U TW110212736 U TW 110212736U TW 110212736 U TW110212736 U TW 110212736U TW M632517 U TWM632517 U TW M632517U
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- channel
- insulating window
- cold
- hot gas
- Prior art date
Links
- 238000009413 insulation Methods 0.000 title description 5
- 238000006243 chemical reaction Methods 0.000 claims description 23
- 238000001514 detection method Methods 0.000 claims description 16
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000004891 communication Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 164
- 230000009286 beneficial effect Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
一種等離子體處理裝置及絕緣視窗,其中,絕緣視窗包括:絕緣視窗本體;氣體通道,開設於所述絕緣視窗本體內;熱氣體源和冷氣體源,與所述氣體通道連通,用於向所述氣體通道內輸送熱氣體和冷氣體;閥裝置,與所述熱氣體源和所述冷氣體源連接,用於調整流通於所述氣體通道內熱氣體相對於冷氣體的混合比,以控制所述氣體通道內氣體的溫度;控制器,與所述閥裝置連接,用於控制所述閥裝置來調整流通於所述氣體通道內熱氣體相對於冷氣體的混合比。所述絕緣視窗的溫度動態可控,且均勻性較好。 A plasma processing device and an insulating window, wherein the insulating window includes: an insulating window body; a gas channel opened in the insulating window body; a hot gas source and a cold gas source communicated with the gas channel for supplying The hot gas and the cold gas are transported in the gas channel; the valve device is connected with the hot gas source and the cold gas source, and is used to adjust the mixing ratio of the hot gas relative to the cold gas flowing in the gas channel, so as to control the The temperature of the gas in the gas channel; the controller, connected with the valve device, is used to control the valve device to adjust the mixing ratio of the hot gas relative to the cold gas flowing in the gas channel. The temperature of the insulating window is dynamically controllable and has good uniformity.
Description
本創作涉及半導體的領域,尤其涉及一種等離子體處理裝置及絕緣視窗。 The invention relates to the field of semiconductors, in particular to a plasma processing device and an insulating window.
等離子體處理裝置被廣泛應用再半導體領域內,用於對待處理基片進行高精度的加工,如:等離子體蝕刻、化學氣相沉積,其中,電感耦合等離子體處理裝置因具有蝕刻速率高、選擇比高且大面積均勻性好的特點被廣泛應用在矽蝕刻領域。所述電感耦合等離子體處理裝置包括絕緣視窗,所述電感耦合等離子體處理裝置內進行等離子體蝕刻製程,在等離子體蝕刻製程中,為了更穩定的製程,需對絕緣視窗進行加熱並保持一個較高的溫度,以匹配等離子體處理裝置的反應腔內的等離子體的溫度。通常控制絕緣視窗的溫度的方法包括:在所述絕緣視窗的表面貼設有加熱器,另配置有風扇冷卻來保持平衡。由於排風受限,當等離子體較強時,即使在加熱器沒有輸出的情況下,絕緣視窗還是處於不可控的超過設定值。 Plasma processing devices are widely used in the field of semiconductors for high-precision processing of substrates to be processed, such as plasma etching and chemical vapor deposition. Among them, inductively coupled plasma processing devices have high etching rates and selectivity The characteristics of high ratio and large-area uniformity are widely used in the field of silicon etching. The inductively coupled plasma processing device includes an insulating window, and a plasma etching process is performed in the inductively coupled plasma processing device. During the plasma etching process, for a more stable process, the insulating window needs to be heated and maintained at a relatively High temperature to match the temperature of the plasma in the reaction chamber of the plasma processing apparatus. Usually, the method for controlling the temperature of the insulating window includes: attaching a heater on the surface of the insulating window, and installing a cooling fan to maintain balance. Due to the limited exhaust, when the plasma is strong, the insulation window is still in an uncontrollable excess of the set value even when the heater has no output.
因此,需要提供一種能夠動態可控地調整絕緣視窗的溫度。 Therefore, it is necessary to provide a method capable of dynamically and controllably adjusting the temperature of the insulating window.
本創作解決的技術問題是提供了一種等離子體處理裝置及絕緣視窗,以動態可控地調整絕緣視窗的溫度。 The technical problem solved by the invention is to provide a plasma processing device and an insulating window to dynamically and controllably adjust the temperature of the insulating window.
為解決上述技術問題,本創作提供一種絕緣視窗,包括:絕緣視窗本體;氣體通道,開設於所述絕緣視窗本體內;熱氣體源和冷氣體源,與所述氣體通道連接,用於向所述氣體通道內輸送熱氣體和冷氣體;閥 裝置,與所述熱氣體源和所述冷氣體源連接,用於調整流通於所述氣體通道內熱氣體相對於冷氣體的混合比,以控制所述氣體通道內氣體的溫度;控制器,與所述閥裝置連接,用於控制所述閥裝置來調整流通於所述氣體通道內熱氣體相對於冷氣體的混合比。 In order to solve the above technical problems, this invention provides an insulating window, which includes: an insulating window body; a gas channel opened in the insulating window body; a hot gas source and a cold gas source connected to the gas channel for supplying Conveying hot and cold gas in the gas channel; the valve A device, connected with the hot gas source and the cold gas source, is used to adjust the mixing ratio of the hot gas relative to the cold gas flowing in the gas channel, so as to control the temperature of the gas in the gas channel; the controller, and The valve device is connected to control the valve device to adjust the mixing ratio of the hot gas relative to the cold gas flowing in the gas channel.
較佳的,還包括:溫度感測器,用於檢測所述絕緣視窗本體的溫度並將檢測結果發送至所述控制器,所述控制器根據檢測結果和目標溫度,向所述閥裝置發送指示訊號,指示調整流通於所述氣體通道內熱氣體相對於冷氣體的混合比。 Preferably, it also includes: a temperature sensor for detecting the temperature of the insulating window body and sending the detection result to the controller, and the controller sends the temperature sensor to the valve device according to the detection result and the target temperature The indication signal indicates to adjust the mixing ratio of the hot gas relative to the cold gas flowing in the gas channel.
較佳的,所述熱氣體源的熱氣體的溫度範圍為:100攝氏度~150攝氏度;所述冷氣體源的冷氣體的溫度範圍為:0攝氏度~40攝氏度。 Preferably, the temperature range of the hot gas of the hot gas source is: 100 degrees Celsius to 150 degrees Celsius; the temperature range of the cold gas of the cold gas source is: 0 degrees Celsius to 40 degrees Celsius.
較佳的,所述氣體通道包括:環形通道和位於所述環形通道內的輻射形通道,所述輻射形通道的兩端與環形通道連通,所述氣體通道還設有與環形通道連通的入口和出口,所述入口和出口之間相互隔離;所述熱氣體源和冷氣體源與所述入口連通,所述熱氣體源的熱氣體和冷氣體源的冷氣體在氣體通道內傳輸後,通過所述出口輸出。 Preferably, the gas channel includes: an annular channel and a radial channel located in the annular channel, both ends of the radial channel communicate with the annular channel, and the gas channel is also provided with an inlet communicating with the annular channel and the outlet, the inlet and the outlet are isolated from each other; the hot gas source and the cold gas source communicate with the inlet, and after the hot gas of the hot gas source and the cold gas of the cold gas source are transported in the gas channel, output through the outlet.
較佳的,所述氣體通道為螺旋形通道,所述螺旋形通道包括入口和出口,所述入口為螺旋形通道內的端部,所述出口為螺旋形通道外的端部。 Preferably, the gas channel is a helical channel, and the helical channel includes an inlet and an outlet, the inlet is an end inside the helical channel, and the outlet is an end outside the helical channel.
較佳的,還包括:匯合輸入管路,用於匯合所述熱氣體源的熱氣體與冷氣體源的冷氣體,並將混合後的氣體輸送至所述氣體通道。 Preferably, it also includes: a confluence input pipeline, used for merging the hot gas from the hot gas source and the cold gas from the cold gas source, and transporting the mixed gas to the gas channel.
較佳的,還包括:輸出管路,用於輸出氣體通道內的氣體。 Preferably, it also includes: an output pipeline for outputting the gas in the gas channel.
較佳的,所述輸出管路與熱氣體源連通。 Preferably, the output pipeline is in communication with a hot gas source.
較佳的,所述絕緣視窗的材料包括:陶瓷材料或石英。 Preferably, the material of the insulating window includes: ceramic material or quartz.
相應的,本創作還提供一種等離子體處理裝置,包括:反應腔,其包括反應腔側壁;上述的絕緣視窗,位於所述反應腔側壁的上方;以及電感線圈,位於所述絕緣視窗的上方。 Correspondingly, the present invention also provides a plasma processing device, comprising: a reaction chamber including a side wall of the reaction chamber; the above-mentioned insulating window located above the side wall of the reaction chamber; and an inductance coil located above the insulating window.
較佳的,還包括:射頻功率源,與所述電感線圈電連接;偏置功率源,與所述基座電連接。 Preferably, it also includes: a radio frequency power source electrically connected to the inductance coil; a bias power source electrically connected to the base.
與習知技術相比,本創作實施例的技術方案具有以下有益效果:本創作技術方案提供的等離子體處理裝置中,由於所述絕緣視窗本體內增設有氣體通道,所述氣體通道內用於輸送冷氣體源提供的冷氣和熱氣體源提供的熱氣,通過控制器控制閥裝置調節流通於氣體通道內的熱氣體和冷氣體的混合比,有利於使絕緣視窗的實際溫度與設定溫度相一致,且能夠動態可控地調節絕緣視窗的溫度。 Compared with the conventional technology, the technical solution of the embodiment of the invention has the following beneficial effects: In the plasma processing device provided by the technical solution of the invention, since a gas channel is added in the insulating window body, the gas channel is used for Conveying the cold air provided by the cold air source and the hot air provided by the hot air source, the controller controls the valve device to adjust the mixing ratio of the hot air and cold air flowing in the air channel, which is beneficial to make the actual temperature of the insulating window consistent with the set temperature , and can dynamically and controllably adjust the temperature of the insulating window.
進一步,通過熱氣體加熱絕緣視窗,而不採用電阻絲加熱絕緣視窗,有利於避免電阻絲對射頻的干擾。 Further, the insulating window is heated by hot gas instead of the resistance wire, which is beneficial to avoid the interference of the resistance wire to the radio frequency.
10:反應腔 10: Reaction chamber
11:開口 11: opening
12:絕緣視窗 12: Insulation window
120,201:絕緣視窗本體 120,201: insulating window body
121a:環形通道 121a: Ring channel
121b:輻射形通道 121b: radial channel
122,202:熱氣體源 122,202: hot gas source
123,203:冷氣體源 123,203: cold gas source
124,213:冷氣體管道 124,213: cold gas piping
125,212:熱氣體管道 125, 212: hot gas piping
126,214:匯合輸入管路 126,214: Confluent input line
127:輸出管路 127: output pipeline
13:電感耦合線圈 13: Inductive coupling coil
130,240:溫度感測器 130,240: temperature sensor
14:內襯 14: Lining
140,220:控制器 140,220: Controller
15:氣體注入口 15: Gas injection port
150,230:閥裝置 150,230: valve device
16:射頻功率源 16: RF power source
17,19:射頻匹配網路 17,19: RF matching network
18:偏置射頻功率源 18: Bias RF power source
210:氣體通道 210: gas channel
3:下電極元件 3: Bottom electrode element
A,C:入口 A, C: Entrance
B,D:出口 B, D: export
W:基片 W: Substrate
圖1為本創作一種等離子體處理裝置的結構示意圖;圖2為本創作一種絕緣視窗的結構示意圖;以及圖3為本創作另一種絕緣視窗的結構示意圖。 FIG. 1 is a schematic structural diagram of a plasma processing device of the present invention; FIG. 2 is a schematic structural diagram of an insulating window of the present invention; and FIG. 3 is a schematic structural diagram of another insulating window of the present invention.
正如先前技術所述,迫切需要在一種絕緣視窗以動態可控地調整絕緣視窗的溫度,為此,本創作致力於提供一種絕緣視窗及包含所述絕緣視窗的等離子體處理裝置,以下進行詳細說明: 圖1為本創作一種等離子體處理裝置的結構示意圖。 As stated in the prior art, there is an urgent need to dynamically and controllably adjust the temperature of the insulating window in an insulating window. For this reason, the present creation is dedicated to providing an insulating window and a plasma processing device including the insulating window, which will be described in detail below : FIG. 1 is a schematic structural diagram of a plasma processing device of the present invention.
請參考圖1,等離子體處理裝置1包括:反應腔10,其內為真空環境,其包括反應腔側壁;絕緣視窗12,位於所述反應腔側壁上方。
Please refer to FIG. 1 , the plasma processing apparatus 1 includes: a
所述反應腔10內為真空環境,其包括由金屬材料製成的大致為圓柱形的反應腔側壁,反應腔側壁上設置一開口11用於容納基片進出。反應腔側壁上方設置一絕緣視窗12,所述絕緣視窗12的材料包括陶瓷材料
或石英,絕緣視窗12的上方設置電感耦合線圈13,射頻功率源16通過射頻匹配網路17將射頻電壓施加到電感耦合線圈13上。
The inside of the
反應腔10內部設置一內襯14,用以保護反應腔10內壁不被等離子體腐蝕,反應腔側壁靠近絕緣視窗12的一端設置氣體注入口15,在其他實施例中也可以在絕緣視窗12的中心區域設置氣體注入口15,氣體注入口15用於將反應氣體注入反應腔10內,射頻功率源16的射頻功率驅動電感耦合線圈13產生較強的高頻交變磁場,使得反應腔10內低壓的反應氣體被電離產生等離子體。在反應腔10內的底部設置下電極元件3,承載待處理基片W。等離子體中含有大量的電子、離子、激發態的原子、分子和自由基等活性粒子,上述活性粒子可以和待處理基片的表面發生多種物理和化學反應,使得基片表面的形貌發生改變,即完成蝕刻過程。一偏置射頻功率源18通過射頻匹配網路19將偏置射頻電壓施加到基座上,用於控制等離子體中帶電粒子的轟擊方向。
A
由於等離子體充斥在所述絕緣視窗12與下電極元件3之間,所述絕緣視窗12的下方將接觸等離子體,所述等離子體的強度較高,將使絕緣視窗12的溫度較高,所述絕緣視窗12的溫度的高低和均勻性,將影響製程的穩定性,因此,迫切需要提高絕緣視窗12的溫度的可控性,以提高製程的可控性和穩定性。
Because the plasma is filled between the
如下對如何提高絕緣視窗12的溫度可控性進行詳細說明:圖2為本創作一種絕緣視窗的結構示意圖。
How to improve the temperature controllability of the insulating
請參考圖2,絕緣視窗12包括:絕緣視窗本體120;氣體通道,開設於所述絕緣視窗本體120內;熱氣體源122和冷氣體源123,與所述氣體通道連接,用於向所述氣體通道內輸送熱氣體和冷氣體;閥裝置150,與所述熱氣體源122和所述冷氣體源123連接,用於調整流通於所述氣體通道內熱氣體相對於冷氣體的混合比,以控制所述氣體通道內氣
體的溫度;控制器140,與所述閥裝置150連接,用於控制所述閥裝置150來調整流通於所述氣體通道內熱氣體相對於冷氣體的混合比。
Please refer to Fig. 2, the insulating
所述絕緣視窗12的溫度的升高依賴於熱氣體源122的熱氣體和絕緣視窗12的下方等離子體的加熱,所述絕緣視窗12的溫度的降低依賴於冷氣體源123的冷氣體的降溫。其中,所述熱氣體源122的熱氣體的溫度範圍為:100攝氏度~150攝氏度;所述冷氣體源123的冷氣體的溫度範圍為:0攝氏度~40攝氏度。
The increase of the temperature of the insulating
所述絕緣視窗12還包括:溫度感測器130,所述溫度感測器130用於探測所述絕緣視窗本體120的表面的溫度,並將檢測到的結果發送至控制器140所述控制器140根據檢測結果和目標溫度,向所述閥裝置150發送指示訊號,指示調整流通於所述氣體通道內熱氣體相對於冷氣體的混合比。例如:當溫度感測器130將檢測到絕緣視窗本體120的溫度發送至控制器140時,控制器140根據檢測結果和目標溫度,判斷出檢測結果的溫度低於目標溫度時,可通過增加熱氣體的混合比,同時降低冷氣體的混合比,有利於使得絕緣視窗本體120的溫度與目標溫度相一致;相反的,當控制器140根據檢測結果和目標溫度,判斷出檢測結果的溫度高於目標溫度時,可通過減小熱氣體的混合比,同時增大冷氣體的混合比,有利於使得絕緣視窗本體120的溫度與目標溫度相一致。通過上述檢測和回饋,有利於使絕緣視窗12的溫度與目標相一致,有利於提高絕緣視窗12的溫度的可控性。
The insulating
在本實施例中,所述氣體通道包括:環形通道121a和位於所述環形通道121a內的輻射形通道121b,所述輻射形通道121b的兩端與環形通道121a連通,所述氣體通道還設有與環形通道121a連通的入口A和出口B,所述入口A和出口B之間相互隔離;所述熱氣體源122和冷氣體源123與所述入口A連通,所述熱氣體源122的熱氣體和冷氣體源123的冷氣體在氣體通道內傳輸後,通過所述出口B輸出。由於所述氣體通道中的輻
射形通道121b輻射狀均勻排布,使得在氣體通道內流動的氣體能夠對絕緣視窗本體120進行均勻控溫。
In this embodiment, the gas channel includes: an
並且,本實施例中,通過熱氣體加熱所述絕緣視窗本體120,有利於避免採用電阻絲加熱受射頻干擾的影響。
Moreover, in this embodiment, the insulating
在本實施例中,所述入口A和出口B設於絕緣視窗本體120的側壁。在其它實施例中,所述入口A和出口B設於所述絕緣視窗本體120的上方或者下方。
In this embodiment, the inlet A and the outlet B are disposed on the sidewall of the insulating
在本實施例中,所述熱氣體源122通過熱氣體管道125輸送熱氣體,所述冷氣體源123通過冷氣體管道124輸送冷氣體,所述熱氣體和冷氣體通過匯合輸入管路126與入口A連通,用於向氣體通道內輸送混合後的熱氣體和冷氣體。由於所述熱氣體和冷氣體在進入氣體通道之前進行混合,使氣體的溫度更均勻有利於更好地對絕緣視窗本體120的溫度進行控制。
In this embodiment, the
另外,在本實施例中,經所述氣體通道的出口B流出的氣體被輸出管路127輸送至熱氣體源122,而不是直接排至大氣中,有利於迴圈利用所述氣體,避免資源浪費。
In addition, in this embodiment, the gas flowing out through the outlet B of the gas channel is transported to the
在其它實施例中,經氣體通道出口流出的氣體被直接排放至大氣中。 In other embodiments, the gas flowing out through the outlet of the gas channel is vented directly to the atmosphere.
圖3為本創作另一種絕緣視窗的結構示意圖。 Fig. 3 is a structural schematic diagram of another insulating window of this invention.
請參考圖3,絕緣視窗12包括:絕緣視窗本體201;氣體通道210,開設於所述絕緣視窗本體201內;熱氣體源202和冷氣體源203,與所述氣體通道210連通,用於向所述氣體通道210內輸送熱氣體和冷氣體;閥裝置230,與所述熱氣體源202和所述冷氣體源203連接,用於調整流通於所述氣體通道210內熱氣體相對於冷氣體的混合比,以控制所述氣體通道210內氣體的溫度;控制器220,與所述閥裝置230連接,用於控制所
述閥裝置230來調整流通於所述氣體通道210內熱氣體相對於冷氣體的混合比。
Please refer to FIG. 3 , the insulating
在本實施例中,所述氣體通道210為螺旋形通道,所述螺旋形通道包括入口C和出口D,所述入口C為螺旋形通道內的端部,所述出口D為螺旋形通道外的端部。所述熱氣體源202通過熱氣體管道212輸送熱氣體,所述冷氣體源203通過冷氣體管道213輸送冷氣體,所述熱氣體和冷氣體通過匯合輸入管路214與入口C連通。還包括:溫度感測器240,用於測量絕緣視窗本體201的表面的溫度,並將檢測到的結果發送至控制器220,所述控制器220根據檢測結果和目標溫度,向所述閥裝置230發送指示訊號,指示調整調整流通於所述氣體通道210內熱氣體相對於冷氣體的混合比。例如:當溫度感測器240將檢測到絕緣視窗本體201的溫度發送至控制器220時,控制器220根據檢測結果和目標溫度,判斷出檢測結果的溫度低於目標溫度時,可通過增加熱氣體的混合比,同時降低冷氣體的混合比,有利於使得絕緣視窗本體201的溫度與目標溫度相一致;相反的,當控制器220根據檢測結果和目標溫度,判斷出檢測結果的溫度高於目標溫度時,可通過減小熱氣體的混合比,同時增大冷氣體的混合比,有利於使得絕緣視窗本體201的溫度與目標溫度相一致。通過上述檢測和回饋,有利於使絕緣視窗12的溫度與目標相一致,有利於提高絕緣視窗12的溫度的可控性。
In this embodiment, the
並且,由於等離子體在絕緣視窗12的中心區域的強度最強,使得絕緣視窗12的中心區域相比邊緣區域的溫度更高,而混合後的氣體剛進入氣體通道210時的溫度最低,因此,使所述混合後的熱氣體和冷氣體首先進入絕緣視窗12的中心區域上方區域,後依次經過氣體通道210,從出口D輸出,有利於提高絕緣視窗12的邊緣區域與中心區域的溫度一致性。
Moreover, since the intensity of the plasma is the strongest in the central region of the insulating
雖然本創作披露如上,但本創作並非限定於此。任何本創作所屬技術領域中具有通常知識者,在不脫離。本創作的精神和範圍內,均可作各種更動與修改,因此本創作的保護範圍應當以申請專利範圍所限定的範圍為原則。 Although the invention is disclosed as above, the invention is not limited thereto. Anyone with ordinary knowledge in the technical field to which this creation belongs will not depart from it. Various changes and modifications can be made within the spirit and scope of this creation, so the protection scope of this creation should be based on the scope limited by the scope of the patent application.
12:絕緣視窗 12: Insulation window
120:絕緣視窗本體 120: insulation window body
121a:環形通道 121a: Ring channel
121b:輻射形通道 121b: radial channel
122:熱氣體源 122: hot gas source
123:冷氣體源 123: cold gas source
124:冷氣體管道 124: Cold gas pipeline
125:熱氣體管道 125: Hot gas pipeline
126:匯合輸入管路 126: confluence input pipeline
127:輸出管路 127: output pipeline
130:溫度感測器 130: temperature sensor
140:控制器 140: Controller
150:閥裝置 150: valve device
A:入口 A: Entrance
B:出口 B: export
Claims (11)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023254054.0 | 2020-12-29 | ||
| CN202023254054.0U CN214099577U (en) | 2020-12-29 | 2020-12-29 | Plasma processing apparatus and insulating window |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWM632517U true TWM632517U (en) | 2022-10-01 |
Family
ID=77434601
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW110212736U TWM632517U (en) | 2020-12-29 | 2021-10-29 | Plasma processing device and insulation window |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN214099577U (en) |
| TW (1) | TWM632517U (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114695043A (en) * | 2020-12-29 | 2022-07-01 | 中微半导体设备(上海)股份有限公司 | Plasma processing device, insulating window and temperature control method thereof |
-
2020
- 2020-12-29 CN CN202023254054.0U patent/CN214099577U/en active Active
-
2021
- 2021-10-29 TW TW110212736U patent/TWM632517U/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN214099577U (en) | 2021-08-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102656327B1 (en) | Ceramic showerhead including central gas injector for tunable convective-diffusive gas flow in semiconductor substrate processing apparatus | |
| US20200058467A1 (en) | Plasma processing apparatus | |
| US9018111B2 (en) | Semiconductor reaction chamber with plasma capabilities | |
| US20030155079A1 (en) | Plasma processing system with dynamic gas distribution control | |
| TWI713414B (en) | Substrate processing device, semiconductor device manufacturing method and recording medium | |
| TWI827992B (en) | Inductively coupled plasma processing device and etching method thereof | |
| US20180127880A1 (en) | Microwave plasma source and microwave plasma processing apparatus | |
| KR20250130751A (en) | Plasma processing apparatus and plasma processing method | |
| KR101197023B1 (en) | Apparatus and method for plasma processing | |
| TWM632517U (en) | Plasma processing device and insulation window | |
| KR101464867B1 (en) | Semiconductor device manufacturing method, substrate processing apparatus, and recording medium | |
| TW202203288A (en) | Plasma processing device and insulating window component thereof wherein the concentration distribution in the plasma processing device can be adjusted, and the temperature of the coil can be prevented from being too high | |
| CN117558674A (en) | Plasma processing device, electrostatic chuck and temperature adjustment method thereof | |
| TW202240645A (en) | Lower electrode assembly and plasma processing apparatus including same | |
| CN120089583A (en) | A plasma etching device, method and preparation method combining ICP and CCP | |
| CN115039197A (en) | Plenum assembly for cooling transformer coupled plasma window | |
| US20240162011A1 (en) | Addition of external ultraviolet light for improved plasma strike consistency | |
| WO2000045427A1 (en) | Method and apparatus for plasma processing | |
| TW202129800A (en) | Gas distribution ceramic heater for deposition chamber | |
| WO2024139768A1 (en) | Gas conveying device and system, and plasma processing device | |
| US9142435B2 (en) | Substrate stage of substrate processing apparatus and substrate processing apparatus | |
| CN114695043A (en) | Plasma processing device, insulating window and temperature control method thereof | |
| KR102810325B1 (en) | Plasma processing apparatus and plasma processing method | |
| TW201523703A (en) | Plasma processing apparatus and plasma processing method | |
| JP2009152233A (en) | Semiconductor manufacturing equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4K | Issue of patent certificate for granted utility model filed before june 30, 2004 |