TWM632517U - Plasma processing device and insulation window - Google Patents

Plasma processing device and insulation window Download PDF

Info

Publication number
TWM632517U
TWM632517U TW110212736U TW110212736U TWM632517U TW M632517 U TWM632517 U TW M632517U TW 110212736 U TW110212736 U TW 110212736U TW 110212736 U TW110212736 U TW 110212736U TW M632517 U TWM632517 U TW M632517U
Authority
TW
Taiwan
Prior art keywords
gas
channel
insulating window
cold
hot gas
Prior art date
Application number
TW110212736U
Other languages
Chinese (zh)
Inventor
巴文林
陳煌琳
Original Assignee
大陸商中微半導體設備(上海)股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 大陸商中微半導體設備(上海)股份有限公司 filed Critical 大陸商中微半導體設備(上海)股份有限公司
Publication of TWM632517U publication Critical patent/TWM632517U/en

Links

Images

Landscapes

  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

一種等離子體處理裝置及絕緣視窗,其中,絕緣視窗包括:絕緣視窗本體;氣體通道,開設於所述絕緣視窗本體內;熱氣體源和冷氣體源,與所述氣體通道連通,用於向所述氣體通道內輸送熱氣體和冷氣體;閥裝置,與所述熱氣體源和所述冷氣體源連接,用於調整流通於所述氣體通道內熱氣體相對於冷氣體的混合比,以控制所述氣體通道內氣體的溫度;控制器,與所述閥裝置連接,用於控制所述閥裝置來調整流通於所述氣體通道內熱氣體相對於冷氣體的混合比。所述絕緣視窗的溫度動態可控,且均勻性較好。 A plasma processing device and an insulating window, wherein the insulating window includes: an insulating window body; a gas channel opened in the insulating window body; a hot gas source and a cold gas source communicated with the gas channel for supplying The hot gas and the cold gas are transported in the gas channel; the valve device is connected with the hot gas source and the cold gas source, and is used to adjust the mixing ratio of the hot gas relative to the cold gas flowing in the gas channel, so as to control the The temperature of the gas in the gas channel; the controller, connected with the valve device, is used to control the valve device to adjust the mixing ratio of the hot gas relative to the cold gas flowing in the gas channel. The temperature of the insulating window is dynamically controllable and has good uniformity.

Description

等離子體處理裝置及絕緣視窗 Plasma processing device and insulating window

本創作涉及半導體的領域,尤其涉及一種等離子體處理裝置及絕緣視窗。 The invention relates to the field of semiconductors, in particular to a plasma processing device and an insulating window.

等離子體處理裝置被廣泛應用再半導體領域內,用於對待處理基片進行高精度的加工,如:等離子體蝕刻、化學氣相沉積,其中,電感耦合等離子體處理裝置因具有蝕刻速率高、選擇比高且大面積均勻性好的特點被廣泛應用在矽蝕刻領域。所述電感耦合等離子體處理裝置包括絕緣視窗,所述電感耦合等離子體處理裝置內進行等離子體蝕刻製程,在等離子體蝕刻製程中,為了更穩定的製程,需對絕緣視窗進行加熱並保持一個較高的溫度,以匹配等離子體處理裝置的反應腔內的等離子體的溫度。通常控制絕緣視窗的溫度的方法包括:在所述絕緣視窗的表面貼設有加熱器,另配置有風扇冷卻來保持平衡。由於排風受限,當等離子體較強時,即使在加熱器沒有輸出的情況下,絕緣視窗還是處於不可控的超過設定值。 Plasma processing devices are widely used in the field of semiconductors for high-precision processing of substrates to be processed, such as plasma etching and chemical vapor deposition. Among them, inductively coupled plasma processing devices have high etching rates and selectivity The characteristics of high ratio and large-area uniformity are widely used in the field of silicon etching. The inductively coupled plasma processing device includes an insulating window, and a plasma etching process is performed in the inductively coupled plasma processing device. During the plasma etching process, for a more stable process, the insulating window needs to be heated and maintained at a relatively High temperature to match the temperature of the plasma in the reaction chamber of the plasma processing apparatus. Usually, the method for controlling the temperature of the insulating window includes: attaching a heater on the surface of the insulating window, and installing a cooling fan to maintain balance. Due to the limited exhaust, when the plasma is strong, the insulation window is still in an uncontrollable excess of the set value even when the heater has no output.

因此,需要提供一種能夠動態可控地調整絕緣視窗的溫度。 Therefore, it is necessary to provide a method capable of dynamically and controllably adjusting the temperature of the insulating window.

本創作解決的技術問題是提供了一種等離子體處理裝置及絕緣視窗,以動態可控地調整絕緣視窗的溫度。 The technical problem solved by the invention is to provide a plasma processing device and an insulating window to dynamically and controllably adjust the temperature of the insulating window.

為解決上述技術問題,本創作提供一種絕緣視窗,包括:絕緣視窗本體;氣體通道,開設於所述絕緣視窗本體內;熱氣體源和冷氣體源,與所述氣體通道連接,用於向所述氣體通道內輸送熱氣體和冷氣體;閥 裝置,與所述熱氣體源和所述冷氣體源連接,用於調整流通於所述氣體通道內熱氣體相對於冷氣體的混合比,以控制所述氣體通道內氣體的溫度;控制器,與所述閥裝置連接,用於控制所述閥裝置來調整流通於所述氣體通道內熱氣體相對於冷氣體的混合比。 In order to solve the above technical problems, this invention provides an insulating window, which includes: an insulating window body; a gas channel opened in the insulating window body; a hot gas source and a cold gas source connected to the gas channel for supplying Conveying hot and cold gas in the gas channel; the valve A device, connected with the hot gas source and the cold gas source, is used to adjust the mixing ratio of the hot gas relative to the cold gas flowing in the gas channel, so as to control the temperature of the gas in the gas channel; the controller, and The valve device is connected to control the valve device to adjust the mixing ratio of the hot gas relative to the cold gas flowing in the gas channel.

較佳的,還包括:溫度感測器,用於檢測所述絕緣視窗本體的溫度並將檢測結果發送至所述控制器,所述控制器根據檢測結果和目標溫度,向所述閥裝置發送指示訊號,指示調整流通於所述氣體通道內熱氣體相對於冷氣體的混合比。 Preferably, it also includes: a temperature sensor for detecting the temperature of the insulating window body and sending the detection result to the controller, and the controller sends the temperature sensor to the valve device according to the detection result and the target temperature The indication signal indicates to adjust the mixing ratio of the hot gas relative to the cold gas flowing in the gas channel.

較佳的,所述熱氣體源的熱氣體的溫度範圍為:100攝氏度~150攝氏度;所述冷氣體源的冷氣體的溫度範圍為:0攝氏度~40攝氏度。 Preferably, the temperature range of the hot gas of the hot gas source is: 100 degrees Celsius to 150 degrees Celsius; the temperature range of the cold gas of the cold gas source is: 0 degrees Celsius to 40 degrees Celsius.

較佳的,所述氣體通道包括:環形通道和位於所述環形通道內的輻射形通道,所述輻射形通道的兩端與環形通道連通,所述氣體通道還設有與環形通道連通的入口和出口,所述入口和出口之間相互隔離;所述熱氣體源和冷氣體源與所述入口連通,所述熱氣體源的熱氣體和冷氣體源的冷氣體在氣體通道內傳輸後,通過所述出口輸出。 Preferably, the gas channel includes: an annular channel and a radial channel located in the annular channel, both ends of the radial channel communicate with the annular channel, and the gas channel is also provided with an inlet communicating with the annular channel and the outlet, the inlet and the outlet are isolated from each other; the hot gas source and the cold gas source communicate with the inlet, and after the hot gas of the hot gas source and the cold gas of the cold gas source are transported in the gas channel, output through the outlet.

較佳的,所述氣體通道為螺旋形通道,所述螺旋形通道包括入口和出口,所述入口為螺旋形通道內的端部,所述出口為螺旋形通道外的端部。 Preferably, the gas channel is a helical channel, and the helical channel includes an inlet and an outlet, the inlet is an end inside the helical channel, and the outlet is an end outside the helical channel.

較佳的,還包括:匯合輸入管路,用於匯合所述熱氣體源的熱氣體與冷氣體源的冷氣體,並將混合後的氣體輸送至所述氣體通道。 Preferably, it also includes: a confluence input pipeline, used for merging the hot gas from the hot gas source and the cold gas from the cold gas source, and transporting the mixed gas to the gas channel.

較佳的,還包括:輸出管路,用於輸出氣體通道內的氣體。 Preferably, it also includes: an output pipeline for outputting the gas in the gas channel.

較佳的,所述輸出管路與熱氣體源連通。 Preferably, the output pipeline is in communication with a hot gas source.

較佳的,所述絕緣視窗的材料包括:陶瓷材料或石英。 Preferably, the material of the insulating window includes: ceramic material or quartz.

相應的,本創作還提供一種等離子體處理裝置,包括:反應腔,其包括反應腔側壁;上述的絕緣視窗,位於所述反應腔側壁的上方;以及電感線圈,位於所述絕緣視窗的上方。 Correspondingly, the present invention also provides a plasma processing device, comprising: a reaction chamber including a side wall of the reaction chamber; the above-mentioned insulating window located above the side wall of the reaction chamber; and an inductance coil located above the insulating window.

較佳的,還包括:射頻功率源,與所述電感線圈電連接;偏置功率源,與所述基座電連接。 Preferably, it also includes: a radio frequency power source electrically connected to the inductance coil; a bias power source electrically connected to the base.

與習知技術相比,本創作實施例的技術方案具有以下有益效果:本創作技術方案提供的等離子體處理裝置中,由於所述絕緣視窗本體內增設有氣體通道,所述氣體通道內用於輸送冷氣體源提供的冷氣和熱氣體源提供的熱氣,通過控制器控制閥裝置調節流通於氣體通道內的熱氣體和冷氣體的混合比,有利於使絕緣視窗的實際溫度與設定溫度相一致,且能夠動態可控地調節絕緣視窗的溫度。 Compared with the conventional technology, the technical solution of the embodiment of the invention has the following beneficial effects: In the plasma processing device provided by the technical solution of the invention, since a gas channel is added in the insulating window body, the gas channel is used for Conveying the cold air provided by the cold air source and the hot air provided by the hot air source, the controller controls the valve device to adjust the mixing ratio of the hot air and cold air flowing in the air channel, which is beneficial to make the actual temperature of the insulating window consistent with the set temperature , and can dynamically and controllably adjust the temperature of the insulating window.

進一步,通過熱氣體加熱絕緣視窗,而不採用電阻絲加熱絕緣視窗,有利於避免電阻絲對射頻的干擾。 Further, the insulating window is heated by hot gas instead of the resistance wire, which is beneficial to avoid the interference of the resistance wire to the radio frequency.

10:反應腔 10: Reaction chamber

11:開口 11: opening

12:絕緣視窗 12: Insulation window

120,201:絕緣視窗本體 120,201: insulating window body

121a:環形通道 121a: Ring channel

121b:輻射形通道 121b: radial channel

122,202:熱氣體源 122,202: hot gas source

123,203:冷氣體源 123,203: cold gas source

124,213:冷氣體管道 124,213: cold gas piping

125,212:熱氣體管道 125, 212: hot gas piping

126,214:匯合輸入管路 126,214: Confluent input line

127:輸出管路 127: output pipeline

13:電感耦合線圈 13: Inductive coupling coil

130,240:溫度感測器 130,240: temperature sensor

14:內襯 14: Lining

140,220:控制器 140,220: Controller

15:氣體注入口 15: Gas injection port

150,230:閥裝置 150,230: valve device

16:射頻功率源 16: RF power source

17,19:射頻匹配網路 17,19: RF matching network

18:偏置射頻功率源 18: Bias RF power source

210:氣體通道 210: gas channel

3:下電極元件 3: Bottom electrode element

A,C:入口 A, C: Entrance

B,D:出口 B, D: export

W:基片 W: Substrate

圖1為本創作一種等離子體處理裝置的結構示意圖;圖2為本創作一種絕緣視窗的結構示意圖;以及圖3為本創作另一種絕緣視窗的結構示意圖。 FIG. 1 is a schematic structural diagram of a plasma processing device of the present invention; FIG. 2 is a schematic structural diagram of an insulating window of the present invention; and FIG. 3 is a schematic structural diagram of another insulating window of the present invention.

正如先前技術所述,迫切需要在一種絕緣視窗以動態可控地調整絕緣視窗的溫度,為此,本創作致力於提供一種絕緣視窗及包含所述絕緣視窗的等離子體處理裝置,以下進行詳細說明: 圖1為本創作一種等離子體處理裝置的結構示意圖。 As stated in the prior art, there is an urgent need to dynamically and controllably adjust the temperature of the insulating window in an insulating window. For this reason, the present creation is dedicated to providing an insulating window and a plasma processing device including the insulating window, which will be described in detail below : FIG. 1 is a schematic structural diagram of a plasma processing device of the present invention.

請參考圖1,等離子體處理裝置1包括:反應腔10,其內為真空環境,其包括反應腔側壁;絕緣視窗12,位於所述反應腔側壁上方。 Please refer to FIG. 1 , the plasma processing apparatus 1 includes: a reaction chamber 10 , which is a vacuum environment, and includes a sidewall of the reaction chamber; an insulating window 12 is located above the sidewall of the reaction chamber.

所述反應腔10內為真空環境,其包括由金屬材料製成的大致為圓柱形的反應腔側壁,反應腔側壁上設置一開口11用於容納基片進出。反應腔側壁上方設置一絕緣視窗12,所述絕緣視窗12的材料包括陶瓷材料 或石英,絕緣視窗12的上方設置電感耦合線圈13,射頻功率源16通過射頻匹配網路17將射頻電壓施加到電感耦合線圈13上。 The inside of the reaction chamber 10 is a vacuum environment, which includes a substantially cylindrical reaction chamber sidewall made of metal material, and an opening 11 is provided on the reaction chamber sidewall to allow the substrate to enter and exit. An insulating window 12 is arranged above the side wall of the reaction chamber, and the material of the insulating window 12 includes ceramic material Or quartz, the inductive coupling coil 13 is arranged above the insulating window 12 , and the radio frequency power source 16 applies the radio frequency voltage to the inductive coupling coil 13 through the radio frequency matching network 17 .

反應腔10內部設置一內襯14,用以保護反應腔10內壁不被等離子體腐蝕,反應腔側壁靠近絕緣視窗12的一端設置氣體注入口15,在其他實施例中也可以在絕緣視窗12的中心區域設置氣體注入口15,氣體注入口15用於將反應氣體注入反應腔10內,射頻功率源16的射頻功率驅動電感耦合線圈13產生較強的高頻交變磁場,使得反應腔10內低壓的反應氣體被電離產生等離子體。在反應腔10內的底部設置下電極元件3,承載待處理基片W。等離子體中含有大量的電子、離子、激發態的原子、分子和自由基等活性粒子,上述活性粒子可以和待處理基片的表面發生多種物理和化學反應,使得基片表面的形貌發生改變,即完成蝕刻過程。一偏置射頻功率源18通過射頻匹配網路19將偏置射頻電壓施加到基座上,用於控制等離子體中帶電粒子的轟擊方向。 A liner 14 is arranged inside the reaction chamber 10 to protect the inner wall of the reaction chamber 10 from being corroded by plasma. A gas injection port 15 is provided on the side wall of the reaction chamber near the insulating window 12. In other embodiments, the insulating window 12 can also be A gas injection port 15 is set in the central area of the gas injection port 15, and the gas injection port 15 is used to inject the reaction gas into the reaction chamber 10. The radio frequency power of the radio frequency power source 16 drives the inductively coupled coil 13 to generate a strong high frequency alternating magnetic field, so that the reaction chamber 10 The internal low-pressure reactive gas is ionized to produce a plasma. A lower electrode element 3 is arranged at the bottom of the reaction chamber 10 to carry the substrate W to be processed. Plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules, and free radicals. The above-mentioned active particles can undergo various physical and chemical reactions with the surface of the substrate to be treated, resulting in changes in the morphology of the substrate surface. , which completes the etching process. A bias RF power source 18 applies a bias RF voltage to the susceptor through an RF matching network 19 for controlling the bombardment direction of charged particles in the plasma.

由於等離子體充斥在所述絕緣視窗12與下電極元件3之間,所述絕緣視窗12的下方將接觸等離子體,所述等離子體的強度較高,將使絕緣視窗12的溫度較高,所述絕緣視窗12的溫度的高低和均勻性,將影響製程的穩定性,因此,迫切需要提高絕緣視窗12的溫度的可控性,以提高製程的可控性和穩定性。 Because the plasma is filled between the insulating window 12 and the lower electrode element 3, the bottom of the insulating window 12 will be in contact with the plasma, and the intensity of the plasma is higher, which will make the temperature of the insulating window 12 higher, so The level and uniformity of the temperature of the insulating window 12 will affect the stability of the process. Therefore, it is urgent to improve the controllability of the temperature of the insulating window 12 to improve the controllability and stability of the process.

如下對如何提高絕緣視窗12的溫度可控性進行詳細說明:圖2為本創作一種絕緣視窗的結構示意圖。 How to improve the temperature controllability of the insulating window 12 is described in detail as follows: FIG. 2 is a schematic structural diagram of an insulating window of this invention.

請參考圖2,絕緣視窗12包括:絕緣視窗本體120;氣體通道,開設於所述絕緣視窗本體120內;熱氣體源122和冷氣體源123,與所述氣體通道連接,用於向所述氣體通道內輸送熱氣體和冷氣體;閥裝置150,與所述熱氣體源122和所述冷氣體源123連接,用於調整流通於所述氣體通道內熱氣體相對於冷氣體的混合比,以控制所述氣體通道內氣 體的溫度;控制器140,與所述閥裝置150連接,用於控制所述閥裝置150來調整流通於所述氣體通道內熱氣體相對於冷氣體的混合比。 Please refer to Fig. 2, the insulating window 12 includes: an insulating window body 120; a gas channel, opened in the insulating window body 120; a hot gas source 122 and a cold gas source 123, connected with the gas channel, for Conveying hot gas and cold gas in the gas channel; valve device 150, connected with the hot gas source 122 and the cold gas source 123, is used to adjust the mixing ratio of the hot gas relative to the cold gas circulating in the gas channel, so as to Control the gas in the gas channel The temperature of the body; the controller 140, connected with the valve device 150, is used to control the valve device 150 to adjust the mixing ratio of the hot gas relative to the cold gas flowing in the gas channel.

所述絕緣視窗12的溫度的升高依賴於熱氣體源122的熱氣體和絕緣視窗12的下方等離子體的加熱,所述絕緣視窗12的溫度的降低依賴於冷氣體源123的冷氣體的降溫。其中,所述熱氣體源122的熱氣體的溫度範圍為:100攝氏度~150攝氏度;所述冷氣體源123的冷氣體的溫度範圍為:0攝氏度~40攝氏度。 The increase of the temperature of the insulating window 12 depends on the heating of the hot gas of the hot gas source 122 and the plasma below the insulating window 12, and the reduction of the temperature of the insulating window 12 depends on the cooling of the cold gas of the cold gas source 123 . Wherein, the temperature range of the hot gas of the hot gas source 122 is: 100 degrees Celsius to 150 degrees Celsius; the temperature range of the cold gas of the cold gas source 123 is: 0 degrees Celsius to 40 degrees Celsius.

所述絕緣視窗12還包括:溫度感測器130,所述溫度感測器130用於探測所述絕緣視窗本體120的表面的溫度,並將檢測到的結果發送至控制器140所述控制器140根據檢測結果和目標溫度,向所述閥裝置150發送指示訊號,指示調整流通於所述氣體通道內熱氣體相對於冷氣體的混合比。例如:當溫度感測器130將檢測到絕緣視窗本體120的溫度發送至控制器140時,控制器140根據檢測結果和目標溫度,判斷出檢測結果的溫度低於目標溫度時,可通過增加熱氣體的混合比,同時降低冷氣體的混合比,有利於使得絕緣視窗本體120的溫度與目標溫度相一致;相反的,當控制器140根據檢測結果和目標溫度,判斷出檢測結果的溫度高於目標溫度時,可通過減小熱氣體的混合比,同時增大冷氣體的混合比,有利於使得絕緣視窗本體120的溫度與目標溫度相一致。通過上述檢測和回饋,有利於使絕緣視窗12的溫度與目標相一致,有利於提高絕緣視窗12的溫度的可控性。 The insulating window 12 also includes: a temperature sensor 130, the temperature sensor 130 is used to detect the temperature of the surface of the insulating window body 120, and send the detected result to the controller 140. The controller 140 sends an instruction signal to the valve device 150 according to the detection result and the target temperature, instructing to adjust the mixing ratio of the hot gas relative to the cold gas flowing in the gas channel. For example: when the temperature sensor 130 detects the temperature of the insulating window body 120 and sends it to the controller 140, the controller 140 judges that the temperature of the detection result is lower than the target temperature according to the detection result and the target temperature. The mixing ratio of the gas, while reducing the mixing ratio of the cold gas, is conducive to making the temperature of the insulating window body 120 consistent with the target temperature; on the contrary, when the controller 140 judges that the temperature of the detection result is higher than the target temperature according to the detection result and the target temperature When the target temperature is reached, the temperature of the insulating window body 120 can be consistent with the target temperature by reducing the mixing ratio of the hot gas and increasing the mixing ratio of the cold gas. Through the above detection and feedback, it is beneficial to make the temperature of the insulating window 12 consistent with the target, and to improve the controllability of the temperature of the insulating window 12 .

在本實施例中,所述氣體通道包括:環形通道121a和位於所述環形通道121a內的輻射形通道121b,所述輻射形通道121b的兩端與環形通道121a連通,所述氣體通道還設有與環形通道121a連通的入口A和出口B,所述入口A和出口B之間相互隔離;所述熱氣體源122和冷氣體源123與所述入口A連通,所述熱氣體源122的熱氣體和冷氣體源123的冷氣體在氣體通道內傳輸後,通過所述出口B輸出。由於所述氣體通道中的輻 射形通道121b輻射狀均勻排布,使得在氣體通道內流動的氣體能夠對絕緣視窗本體120進行均勻控溫。 In this embodiment, the gas channel includes: an annular channel 121a and a radial channel 121b located in the annular channel 121a, the two ends of the radial channel 121b communicate with the annular channel 121a, and the gas channel is also provided with There is an inlet A and an outlet B communicating with the annular channel 121a, and the inlet A and the outlet B are isolated from each other; the hot gas source 122 and the cold gas source 123 are communicated with the inlet A, and the hot gas source 122 After the hot gas and cold gas from the cold gas source 123 are transported in the gas channel, they are output through the outlet B. Due to the radiation in the gas channel The radial channels 121b are uniformly arranged, so that the gas flowing in the gas channels can uniformly control the temperature of the insulating window body 120 .

並且,本實施例中,通過熱氣體加熱所述絕緣視窗本體120,有利於避免採用電阻絲加熱受射頻干擾的影響。 Moreover, in this embodiment, the insulating window body 120 is heated by hot gas, which is beneficial to avoid the influence of radio frequency interference by the resistance wire heating.

在本實施例中,所述入口A和出口B設於絕緣視窗本體120的側壁。在其它實施例中,所述入口A和出口B設於所述絕緣視窗本體120的上方或者下方。 In this embodiment, the inlet A and the outlet B are disposed on the sidewall of the insulating window body 120 . In other embodiments, the inlet A and the outlet B are disposed above or below the insulating window body 120 .

在本實施例中,所述熱氣體源122通過熱氣體管道125輸送熱氣體,所述冷氣體源123通過冷氣體管道124輸送冷氣體,所述熱氣體和冷氣體通過匯合輸入管路126與入口A連通,用於向氣體通道內輸送混合後的熱氣體和冷氣體。由於所述熱氣體和冷氣體在進入氣體通道之前進行混合,使氣體的溫度更均勻有利於更好地對絕緣視窗本體120的溫度進行控制。 In this embodiment, the hot gas source 122 delivers hot gas through a hot gas pipeline 125, the cold gas source 123 delivers cold gas through a cold gas pipeline 124, and the hot gas and cold gas pass through a confluence input pipeline 126 and The inlet A is connected, and is used to deliver mixed hot gas and cold gas into the gas channel. Since the hot gas and cold gas are mixed before entering the gas channel, making the temperature of the gas more uniform is beneficial to better control the temperature of the insulating window body 120 .

另外,在本實施例中,經所述氣體通道的出口B流出的氣體被輸出管路127輸送至熱氣體源122,而不是直接排至大氣中,有利於迴圈利用所述氣體,避免資源浪費。 In addition, in this embodiment, the gas flowing out through the outlet B of the gas channel is transported to the hot gas source 122 by the output pipeline 127, instead of being directly discharged into the atmosphere, which is beneficial to the recycling of the gas and avoids resources waste.

在其它實施例中,經氣體通道出口流出的氣體被直接排放至大氣中。 In other embodiments, the gas flowing out through the outlet of the gas channel is vented directly to the atmosphere.

圖3為本創作另一種絕緣視窗的結構示意圖。 Fig. 3 is a structural schematic diagram of another insulating window of this invention.

請參考圖3,絕緣視窗12包括:絕緣視窗本體201;氣體通道210,開設於所述絕緣視窗本體201內;熱氣體源202和冷氣體源203,與所述氣體通道210連通,用於向所述氣體通道210內輸送熱氣體和冷氣體;閥裝置230,與所述熱氣體源202和所述冷氣體源203連接,用於調整流通於所述氣體通道210內熱氣體相對於冷氣體的混合比,以控制所述氣體通道210內氣體的溫度;控制器220,與所述閥裝置230連接,用於控制所 述閥裝置230來調整流通於所述氣體通道210內熱氣體相對於冷氣體的混合比。 Please refer to FIG. 3 , the insulating window 12 includes: an insulating window body 201; a gas channel 210, which is opened in the insulating window body 201; a hot gas source 202 and a cold gas source 203, communicated with the gas channel 210, for The gas channel 210 transports hot gas and cold gas; the valve device 230 is connected with the hot gas source 202 and the cold gas source 203, and is used to adjust the ratio of the hot gas flowing in the gas channel 210 relative to the cold gas. Mixing ratio, to control the temperature of the gas in the gas passage 210; the controller 220, connected with the valve device 230, is used to control the The valve device 230 is used to adjust the mixing ratio of the hot gas relative to the cold gas flowing in the gas channel 210 .

在本實施例中,所述氣體通道210為螺旋形通道,所述螺旋形通道包括入口C和出口D,所述入口C為螺旋形通道內的端部,所述出口D為螺旋形通道外的端部。所述熱氣體源202通過熱氣體管道212輸送熱氣體,所述冷氣體源203通過冷氣體管道213輸送冷氣體,所述熱氣體和冷氣體通過匯合輸入管路214與入口C連通。還包括:溫度感測器240,用於測量絕緣視窗本體201的表面的溫度,並將檢測到的結果發送至控制器220,所述控制器220根據檢測結果和目標溫度,向所述閥裝置230發送指示訊號,指示調整調整流通於所述氣體通道210內熱氣體相對於冷氣體的混合比。例如:當溫度感測器240將檢測到絕緣視窗本體201的溫度發送至控制器220時,控制器220根據檢測結果和目標溫度,判斷出檢測結果的溫度低於目標溫度時,可通過增加熱氣體的混合比,同時降低冷氣體的混合比,有利於使得絕緣視窗本體201的溫度與目標溫度相一致;相反的,當控制器220根據檢測結果和目標溫度,判斷出檢測結果的溫度高於目標溫度時,可通過減小熱氣體的混合比,同時增大冷氣體的混合比,有利於使得絕緣視窗本體201的溫度與目標溫度相一致。通過上述檢測和回饋,有利於使絕緣視窗12的溫度與目標相一致,有利於提高絕緣視窗12的溫度的可控性。 In this embodiment, the gas channel 210 is a spiral channel, and the spiral channel includes an inlet C and an outlet D, the inlet C is the end of the spiral channel, and the outlet D is the end of the spiral channel. the end of. The hot gas source 202 delivers hot gas through a hot gas pipeline 212 , the cold gas source 203 delivers cold gas through a cold gas pipeline 213 , and the hot gas and cold gas communicate with the inlet C through a combined input pipeline 214 . It also includes: a temperature sensor 240, which is used to measure the temperature of the surface of the insulating window body 201, and sends the detected result to the controller 220, and the controller 220 sends a signal to the valve device according to the detection result and the target temperature. 230 sends an instruction signal to instruct to adjust the mixing ratio of the hot gas relative to the cold gas flowing in the gas channel 210 . For example: when the temperature sensor 240 detects the temperature of the insulating window body 201 and sends it to the controller 220, the controller 220 judges that the temperature of the detection result is lower than the target temperature according to the detection result and the target temperature. The mixing ratio of the gas, while reducing the mixing ratio of the cold gas, is conducive to making the temperature of the insulating window body 201 consistent with the target temperature; on the contrary, when the controller 220 judges that the temperature of the detection result is higher than the target temperature according to the detection result and the target temperature When the target temperature is reached, the temperature of the insulating window body 201 can be consistent with the target temperature by decreasing the mixing ratio of the hot gas and increasing the mixing ratio of the cold gas. Through the above detection and feedback, it is beneficial to make the temperature of the insulating window 12 consistent with the target, and it is beneficial to improve the controllability of the temperature of the insulating window 12 .

並且,由於等離子體在絕緣視窗12的中心區域的強度最強,使得絕緣視窗12的中心區域相比邊緣區域的溫度更高,而混合後的氣體剛進入氣體通道210時的溫度最低,因此,使所述混合後的熱氣體和冷氣體首先進入絕緣視窗12的中心區域上方區域,後依次經過氣體通道210,從出口D輸出,有利於提高絕緣視窗12的邊緣區域與中心區域的溫度一致性。 Moreover, since the intensity of the plasma is the strongest in the central region of the insulating window 12, the temperature of the central region of the insulating window 12 is higher than that of the edge region, and the temperature of the mixed gas is the lowest when it first enters the gas channel 210. Therefore, the The mixed hot gas and cold gas first enter the area above the central area of the insulating window 12, then pass through the gas channel 210 in turn, and output from the outlet D, which is beneficial to improve the temperature consistency between the edge area and the central area of the insulating window 12.

雖然本創作披露如上,但本創作並非限定於此。任何本創作所屬技術領域中具有通常知識者,在不脫離。本創作的精神和範圍內,均可作各種更動與修改,因此本創作的保護範圍應當以申請專利範圍所限定的範圍為原則。 Although the invention is disclosed as above, the invention is not limited thereto. Anyone with ordinary knowledge in the technical field to which this creation belongs will not depart from it. Various changes and modifications can be made within the spirit and scope of this creation, so the protection scope of this creation should be based on the scope limited by the scope of the patent application.

12:絕緣視窗 12: Insulation window

120:絕緣視窗本體 120: insulation window body

121a:環形通道 121a: Ring channel

121b:輻射形通道 121b: radial channel

122:熱氣體源 122: hot gas source

123:冷氣體源 123: cold gas source

124:冷氣體管道 124: Cold gas pipeline

125:熱氣體管道 125: Hot gas pipeline

126:匯合輸入管路 126: confluence input pipeline

127:輸出管路 127: output pipeline

130:溫度感測器 130: temperature sensor

140:控制器 140: Controller

150:閥裝置 150: valve device

A:入口 A: Entrance

B:出口 B: export

Claims (11)

一種絕緣視窗,其中,包括:一絕緣視窗本體;一氣體通道,開設於該絕緣視窗本體內;一熱氣體源和一冷氣體源,與該氣體通道連通,用於向該氣體通道內輸送一熱氣體和一冷氣體;一閥裝置,與該熱氣體源和該冷氣體源連接,用於調整流通於該氣體通道內該熱氣體相對於該冷氣體的混合比,以控制該氣體通道內氣體的溫度;以及一控制器,與該閥裝置連接,用於控制該閥裝置來調整流通於該氣體通道內該熱氣體相對於該冷氣體的混合比。 An insulating window, which includes: an insulating window body; a gas channel opened in the insulating window body; a hot gas source and a cold gas source communicated with the gas channel for delivering a Hot gas and a cold gas; a valve device, connected with the hot gas source and the cold gas source, used to adjust the mixing ratio of the hot gas relative to the cold gas flowing in the gas channel, to control the gas channel the temperature of the gas; and a controller, connected to the valve device, for controlling the valve device to adjust the mixing ratio of the hot gas relative to the cold gas flowing in the gas channel. 如請求項1所述的絕緣視窗,其中,還包括:一溫度感測器,用於檢測該絕緣視窗本體的溫度並將一檢測結果發送至該控制器,該控制器根據該檢測結果和一目標溫度,向該閥裝置發送一指示訊號,指示調整流通於該氣體通道內該熱氣體相對於該冷氣體的混合比。 The insulating window according to claim 1, further comprising: a temperature sensor for detecting the temperature of the insulating window body and sending a detection result to the controller, the controller according to the detection result and a The target temperature sends an indication signal to the valve device, instructing to adjust the mixing ratio of the hot gas relative to the cold gas flowing in the gas channel. 如請求項1所述的絕緣視窗,其中,該熱氣體源的該熱氣體的溫度範圍為:100攝氏度~150攝氏度;該冷氣體源的該冷氣體的溫度範圍為:0攝氏度~40攝氏度。 The insulating window as described in Claim 1, wherein the temperature range of the hot gas of the hot gas source is: 100 degrees Celsius to 150 degrees Celsius; the temperature range of the cold gas of the cold gas source is: 0 degrees Celsius to 40 degrees Celsius. 如請求項1所述的絕緣視窗,其中,該氣體通道包括:一環形通道和位於該環形通道內的一輻射形通道,該輻射形通道的兩端與該環形通道連通,該氣體通道還設有與該環形通道連通的一入口和一出口,該入口和該出口之間相互隔離;該熱氣體源和該冷氣體源與該入口連通,該熱氣體源的該熱氣體和該冷氣體源的該冷氣體在該氣體通道內傳輸後,通過該出口輸出。 The insulating window as described in claim 1, wherein the gas channel includes: an annular channel and a radial channel located in the annular channel, both ends of the radial channel communicate with the annular channel, and the gas channel is also provided with There is an inlet and an outlet communicating with the annular channel, the inlet and the outlet are isolated from each other; the hot gas source and the cold gas source are communicated with the inlet, the hot gas and the cold gas source of the hot gas source After the cold gas is transported in the gas channel, it is output through the outlet. 如請求項1所述的絕緣視窗,其中,該氣體通道為一螺旋形通道,該螺旋形通道包括一入口和一出口,該入口為該螺旋形通道內的端部, 該出口為該螺旋形通道外的端部。 The insulating window according to claim 1, wherein the gas channel is a spiral channel, the spiral channel includes an inlet and an outlet, and the inlet is an end in the spiral channel, The outlet is the outer end of the helical channel. 如請求項1或4或5所述的絕緣視窗,其中,還包括:一匯合輸入管路,用於匯合該熱氣體源的該熱氣體與該冷氣體源的該冷氣體,並將混合後的氣體輸送至該氣體通道。 The insulating window as described in claim 1 or 4 or 5, further comprising: a confluence input pipeline for merging the hot gas of the hot gas source and the cold gas of the cold gas source, and mixing the The gas is delivered to the gas channel. 如請求項6所述的絕緣視窗,其中,還包括:一輸出管路,用於輸出該氣體通道內的氣體。 The insulating window according to claim 6, further comprising: an output pipeline for outputting the gas in the gas channel. 如請求項7所述的絕緣視窗,其中,該輸出管路與該熱氣體源連通。 The insulating window of claim 7, wherein the output line is in communication with the hot gas source. 如請求項1所述的絕緣視窗,其中,該絕緣視窗的材料包括:陶瓷材料或石英。 The insulating window according to claim 1, wherein the material of the insulating window includes: ceramic material or quartz. 一種等離子體處理裝置,其中,包括:一反應腔,其包括一反應腔側壁;一如請求項1至請求項9中任一項所述的絕緣視窗,位於該反應腔側壁的上方;以及一電感線圈,位於該絕緣視窗的上方。 A plasma processing device, comprising: a reaction chamber including a side wall of the reaction chamber; an insulating window as described in any one of claim 1 to claim 9, located above the side wall of the reaction chamber; and a The inductance coil is located above the insulating window. 如請求項10所述的等離子體處理裝置,其中,還包括:一射頻功率源,與該電感線圈電連接;一基座,設於該反應腔的底部;以及一偏置功率源,與該基座電連接。 The plasma processing device according to claim 10, further comprising: a radio frequency power source electrically connected to the inductance coil; a base disposed at the bottom of the reaction chamber; and a bias power source connected to the The base is electrically connected.
TW110212736U 2020-12-29 2021-10-29 Plasma processing device and insulation window TWM632517U (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202023254054.0 2020-12-29
CN202023254054.0U CN214099577U (en) 2020-12-29 2020-12-29 Plasma processing apparatus and insulating window

Publications (1)

Publication Number Publication Date
TWM632517U true TWM632517U (en) 2022-10-01

Family

ID=77434601

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110212736U TWM632517U (en) 2020-12-29 2021-10-29 Plasma processing device and insulation window

Country Status (2)

Country Link
CN (1) CN214099577U (en)
TW (1) TWM632517U (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114695043A (en) * 2020-12-29 2022-07-01 中微半导体设备(上海)股份有限公司 Plasma processing device, insulating window and temperature control method thereof

Also Published As

Publication number Publication date
CN214099577U (en) 2021-08-31

Similar Documents

Publication Publication Date Title
KR102656327B1 (en) Ceramic showerhead including central gas injector for tunable convective-diffusive gas flow in semiconductor substrate processing apparatus
US20200058467A1 (en) Plasma processing apparatus
US9018111B2 (en) Semiconductor reaction chamber with plasma capabilities
US20030155079A1 (en) Plasma processing system with dynamic gas distribution control
TWI713414B (en) Substrate processing device, semiconductor device manufacturing method and recording medium
TWI827992B (en) Inductively coupled plasma processing device and etching method thereof
US20180127880A1 (en) Microwave plasma source and microwave plasma processing apparatus
KR20250130751A (en) Plasma processing apparatus and plasma processing method
KR101197023B1 (en) Apparatus and method for plasma processing
TWM632517U (en) Plasma processing device and insulation window
KR101464867B1 (en) Semiconductor device manufacturing method, substrate processing apparatus, and recording medium
TW202203288A (en) Plasma processing device and insulating window component thereof wherein the concentration distribution in the plasma processing device can be adjusted, and the temperature of the coil can be prevented from being too high
CN117558674A (en) Plasma processing device, electrostatic chuck and temperature adjustment method thereof
TW202240645A (en) Lower electrode assembly and plasma processing apparatus including same
CN120089583A (en) A plasma etching device, method and preparation method combining ICP and CCP
CN115039197A (en) Plenum assembly for cooling transformer coupled plasma window
US20240162011A1 (en) Addition of external ultraviolet light for improved plasma strike consistency
WO2000045427A1 (en) Method and apparatus for plasma processing
TW202129800A (en) Gas distribution ceramic heater for deposition chamber
WO2024139768A1 (en) Gas conveying device and system, and plasma processing device
US9142435B2 (en) Substrate stage of substrate processing apparatus and substrate processing apparatus
CN114695043A (en) Plasma processing device, insulating window and temperature control method thereof
KR102810325B1 (en) Plasma processing apparatus and plasma processing method
TW201523703A (en) Plasma processing apparatus and plasma processing method
JP2009152233A (en) Semiconductor manufacturing equipment

Legal Events

Date Code Title Description
GD4K Issue of patent certificate for granted utility model filed before june 30, 2004