TWM630714U - Ozone sensing element - Google Patents

Abstract

The present invention provides an ozone sensing device, which includes: a substrate and a reaction layer; the substrate has a surface; the reaction layer is disposed on the surface, the reaction layer includes an inorganic metal oxide, and the inorganic metal oxide includes titanium dioxide and indium oxide, Wherein, the weight ratio of the titanium dioxide to the indium oxide is 1:3 to 1:6; thereby, the user can quickly and accurately obtain the ozone concentration in the environment at room temperature.

Description

Ozone sensing element

This creation relates to a gas sensing related device, especially an ozone sensing element.

Generally, ozone sensors are classified into semiconductor type, electrochemical type and thermal conductivity type. Among them, the semiconductor type sensor is more suitable for civil gas detection due to its small size and low cost. The sensing principle of the semiconductor sensor is: after the metal oxide semiconductor is heated, the gas in the environment is adsorbed on the surface of the material by the defects on the surface of the material, and the surface resistance of the material changes, which is converted by the ratio of the change. Get the gas concentration to be measured.

However, in the existing semiconductor ozone sensor, the sensitivity of the sensing element is extremely poor, and the signal response and recovery time is long, and the time required for sensing is as long as tens of minutes, because the ozone gas in the environment is always in Changes, the ozone concentration sensed by the existing semiconductor ozone sensor is difficult to be representative, and it is impossible to give an early warning of harmful gases in real time.

In addition, the semiconductor ozone sensor needs to heat the sensing element during the sensing process, and the sensing temperature is usually higher than 250°C or even as high as 400°C. The sensing element also has high heat resistance requirements for the outer layer packaging material during the packaging process, which increases the packaging cost invisibly.

The main purpose of this creation is to provide an ozone sensing element, which can quickly obtain high-accuracy ozone concentration detection results at room temperature.

In order to achieve the above object, an embodiment of the present invention provides an ozone sensing device, which includes: a substrate and a reaction layer; the substrate has a surface; the reaction layer is disposed on the surface, and the reaction layer includes an inorganic metal oxide, The inorganic metal oxide includes titanium dioxide and indium oxide, wherein the weight ratio of the titanium dioxide and the indium oxide is 1:3 to 1:6.

In another embodiment of the present invention, the weight ratio of the titanium dioxide to the indium oxide of the inorganic metal oxide is 1:4.5 to 1:5.5.

In another embodiment of the present invention, the reaction layer further includes a coating agent.

In another embodiment of the present invention, the coating agent is polyphthalamide, tetrabutyl titanate, polyvinyl alcohol, stannous octoate, ethyl cellulose, Triton X-100, titanium tetraisopropoxide , ethanol, deionized water, isopropanol, tin chloride, stannous chloride or one or a combination thereof.

In another embodiment of the present invention, the thickness of the reaction layer is 25±5 μm, and the thickness of the substrate is 0.1 cm.

In another embodiment of the present invention, the material of the substrate is alumina, ITO glass or FTO glass.

In another embodiment of the present invention, there is an electrode layer disposed on the substrate, the electrode layer includes a first electrode and a second electrode, and the first electrode and the second electrode respectively have a detection part and a connection part .

In another embodiment of the present invention, the detection portions of the first electrode and the second electrode are generally comb-shaped and interlaced.

In another embodiment of the present invention, the materials of the detection parts of the first electrode and the second electrode are gold.

In another embodiment of the present invention, the material of the connecting portion of the first electrode and the second electrode is platinum.

Therefore, the ozone sensing device of the present invention provides users with ozone detection without heating the detection chip. In addition to saving the cost of chip packaging that requires high heat resistance, it has extremely high detection sensitivity for ozone. The ozone concentration in the environment can be obtained quickly and accurately.

100: Ozone sensing element

10: Substrate

20: Reactive Layer

21: Inorganic metal oxides

22: Coating agent

30: Electrode layer

31: The first electrode

32: Second electrode

T: Detection Department

C: connecting part

S: detection curve

S': Concentration curve

P: concentration signal

FIG. 1 is a schematic diagram of the appearance of the ozone sensing element of the present invention.

FIG. 2 is a schematic exploded view of the structure of the ozone sensing element of the present invention.

FIG. 3a is a schematic diagram (1) of the resistance signal of the present invention, which is used to represent the ozone detection result of the inorganic metal oxide whose weight ratio of titanium dioxide and indium oxide is 1:1.

FIG. 3b is a comparison diagram (1) of the present inventive example and a commercially available semiconductor-type ozone sensor.

FIG. 4a is a schematic diagram (2) of the resistance signal of the present invention, which is used to represent the ozone detection result of the inorganic metal oxide whose weight ratio of titanium dioxide and indium oxide is 1:2.

FIG. 4b is a comparison diagram (2) of the present inventive example and a commercially available semiconductor-type ozone sensor.

FIG. 5a is a schematic diagram (3) of the resistance signal of the present invention, which is used to represent the ozone detection result of the inorganic metal oxide whose weight ratio of titanium dioxide and indium oxide is 1:3.

FIG. 5b is a comparison diagram (3) of the present inventive example and a commercially available semiconductor-type ozone sensor.

FIG. 6a is a schematic diagram (4) of the resistance signal of the present invention, which is used to represent the ozone detection result of the inorganic metal oxide whose weight ratio of titanium dioxide and indium oxide is 1:4.

FIG. 6b is a comparison diagram (4) of the present inventive example and a commercially available semiconductor-type ozone sensor.

FIG. 7a is a schematic diagram (5) of the resistance signal of the present invention, which is used to represent the ozone detection result of the inorganic metal oxide whose weight ratio of titanium dioxide and indium oxide is 1:5.

FIG. 7b is a comparison diagram (5) of the present inventive example and a commercially available semiconductor-type ozone sensor.

FIG. 8a is a schematic diagram (6) of the resistance signal of the present invention, which is used to represent the ozone detection result of the inorganic metal oxide whose weight ratio of titanium dioxide and indium oxide is 1:6.

FIG. 8b is a comparison diagram (6) of the present inventive example and a commercially available semiconductor-type ozone sensor.

FIG. 9a is a schematic diagram (7) of the resistance signal of the present invention, which is used to represent the ozone detection result of the inorganic metal oxide whose weight ratio of titanium dioxide and indium oxide is 2:1.

FIG. 9b is a comparison diagram (7) of the present inventive example and a commercially available semiconductor-type ozone sensor.

In order to facilitate the description of the central idea expressed in the column of the above-mentioned novel content of the present creation, specific embodiments are hereby expressed. Various objects in the embodiments are drawn according to proportions, sizes, deformations or displacements suitable for description, rather than the proportions of actual elements, which will be described first.

Please refer to FIG. 1 to FIG. 9b, the present invention provides an ozone sensing device 100. FIG. 1 is a schematic view of the appearance of the ozone sensing device 100 of the present invention; FIG. 2 is a schematic exploded view of the structure of the ozone sensing device 100; 9b is a schematic diagram of the resistance signal of the ozone sensing element 100 for ozone detection with different weight ratios of titanium dioxide and indium oxide, and a comparison diagram of the ozone sensing element 100 and a commercially available semiconductor type ozone sensor.

In this embodiment, the ozone sensing element 100 can cooperate with the detection device to measure the resistance change on the surface of the ozone sensing element 100 by means of illumination, so as to detect the concentration of ozone (O ₃ ) in the environment; in this embodiment , the detection device is a PR10 data acquisition system.

The ozone sensing device 100 includes a substrate 10 and a reaction layer 20 , the substrate 10 has a surface, and the reaction layer 20 is stacked on the surface of the substrate 10 .

In this embodiment, the material of the substrate 10 is aluminum oxide (Al ₂ O ₃ ), ITO glass or FTO glass; The thickness of the substrate 10 is 0.1 cm.

The reaction layer 20 includes an inorganic metal oxide 21 and a coating agent 22 , wherein the reaction layer 20 is approximately square, the length and width of the reaction layer 20 are 0.5 cm, and the thickness of the reaction layer 20 is 25±5 μm.

In this embodiment, when ozone detection is performed, the reaction layer 20 is irradiated by UV-Visible LEDs with a spectral range of 385 to 425 nm, and energy is given to the material of the inorganic metal oxide 21, so that the electrons of the material of the inorganic metal oxide 21 are irradiated. It is separated from the hole, and a working voltage of 2V is applied to the reaction layer 20 with a detection device, so that the surface resistance change of the reaction layer 20 can be measured at room temperature without heating the reaction layer 20, and further The resistance signal is differentiated to obtain the concentration change of ozone.

The inorganic metal oxide 21 includes titanium dioxide (TiO ₂ ) and indium oxide (In ₂ O ₃ ). In this embodiment, the weight ratio of titanium dioxide and indium oxide is between 1:3 and 1:6. The weight ratio of indium oxide is 1:5 is the best ratio.

The coating agent 22 is used to tightly bond the titanium dioxide and the indium oxide; in this embodiment, the coating agent 22 is dimerized phthalamide (PPA, Polyphthalamide), tetrabutyl titanate (C ₁₆ H ₃₆ O ₄ ). Ti), polyvinyl alcohol ((C ₂ H ₄ O)x), stannous octoate (C ₁₆ H ₃₀ O ₄ Sn), ethyl cellulose ((C ₁₂ H ₂₂ O ₅ )n), Triton X-100 (C14H ₂₂ O(C ₂ H ₄ O) _n ( _n = _9-10 )), titanium tetraisopropoxide (Ti{OCH(CH ₃ ) ₂ } ₄ ), ethanol (C ₂ H ₅ OH), deionized Water (Deionized Water), isopropanol (C ₃ H ₈ O), tin chloride (SnCl ₄ ), stannous chloride (SnCl ₂ ) or one or a combination thereof.

As shown in FIGS. 1 to 2 , in this embodiment, the ozone sensing element 100 further includes an electrode layer 30 , wherein the electrode layer 30 is disposed on the substrate 10 and is located between the substrate 10 and the reaction layer 20 , and the reaction layer 20 The electrode layer 30 is disposed on the electrode layer 30; the substrate 10 can be inserted into the slot of the detection device, so that the ozone sensing element 100 is electrically connected with the detection device, and the electrode layer 30 is formed on the substrate 10 by means of screen printing for connection reaction Layer 20 and the internal detection circuit of the detection device.

The electrode layer 30 includes a first electrode 31 and a second electrode 32 , wherein the first electrode 31 and the second electrode 32 respectively have a detection part T and a connection part C, wherein the first electrode 31 and the second electrode 32 The detection part T is generally comb-shaped and interlaced (as shown in FIG. 2 ). One end of the detection part T is connected to the reaction layer 20 and the other end is connected to the connection part C. When the substrate 10 is inserted into the slot of the detection device , the ozone sensing element 100 can be connected to the internal detection circuit of the detection device through the connection part C to form a detection loop;

In this embodiment, the material of the detection portion T of the first electrode 31 and the second electrode 32 is gold (Au); the material of the connection portion C of the first electrode 31 and the second electrode 32 is platinum (Pt); wherein, Using gold as the material of the detection portion T in this embodiment can effectively improve the conductivity of the ozone sensing element 100 to enhance the transmission of detection signals.

It is further explained that the weight ratio of titanium dioxide and indium oxide in the inorganic metal oxide 21 will have different effects on the detection of ozone. The resistance change is obtained by detection, and the concentration detection result after signal processing is further compared with the commercially available semiconductor ozone sensor (2B Technologies, Model 202). The experimental data are shown in Figure 3a to Figure 9b: Figure 3a As shown in 3b, FIG. 3a is a schematic diagram of the resistance signal of the inorganic metal oxide 21 whose weight ratio of titanium dioxide and indium oxide is 1:1; FIG. 3b is a diagram showing the weight ratio of titanium dioxide and indium oxide as A comparison diagram of 1:1 inorganic metal oxide 21 and a commercially available semiconductor ozone sensor; during the detection process, ozone was injected into the detection environment every 500 seconds, and the ozone sensing can be observed in Figure 3a A detection curve S of the element 100, the detection device samples the ozone sensing element 100 once every second to form the detection curve S, and then performs differential processing on the detection curve S, and converts the detection curve S to the one shown in FIG. 3b. The concentration curve S' is then compared with a concentration signal P of a commercially available semiconductor ozone sensor.

It can be observed from the comparison results in Fig. 3b that the concentration curve S' obtained by the inorganic metal oxide 21 whose weight ratio of titanium dioxide and indium oxide is 1:1 is noisy and has no response to the introduction of ozone. The concentration signal P of the commercially available semiconductor ozone sensor does not show a better detection effect.

As shown in FIGS. 4a to 4b, FIG. 4a is a schematic diagram of the resistance signal of the inorganic metal oxide 21 whose weight ratio of titanium dioxide and indium oxide is 1:2; FIG. 4b is an inorganic metal whose weight ratio of titanium dioxide and indium oxide is 1:2. A comparison diagram of oxide 21 and a commercially available semiconductor-type ozone sensor; during the detection process, ozone is injected into the detection environment every 500 seconds, and a detection curve of the ozone sensing element 100 can be observed in FIG. 4a S, the detection device samples the ozone sensing element 100 once every second to form the detection curve S, and then performs differential processing on the detection curve S to convert the detection curve S into the concentration curve S' of FIG. 4b, and then Compare with a concentration signal P of a commercially available semiconductor-type ozone sensor.

From the comparison results in Figure 4b, it can be observed that the concentration curve S' obtained by the inorganic metal oxide 21 whose weight ratio of titanium dioxide and indium oxide is 1:2 is also noisy. Compared with the concentration signal P of the commercially available semiconductor ozone sensor, it does not show a better detection effect.

As shown in FIGS. 5a to 5b, FIG. 5a is a schematic diagram of the resistance signal of the inorganic metal oxide 21 whose weight ratio of titanium dioxide and indium oxide is 1:3; FIG. 5b is an inorganic metal whose weight ratio of titanium dioxide and indium oxide is 1:3. Comparison diagram of oxide 21 and a commercially available semiconductor ozone sensor; during the detection process, Ozone is injected into the detection environment every 500 seconds, wherein a detection curve S of the ozone sensing element 100 can be observed in FIG. 5a, and the detection device samples the ozone sensing element 100 once every second to form the detection curve S, the detection curve S is then differentiated, and the detection curve S is converted into the concentration curve S' of FIG. 5b, and then compared with a concentration signal P of a commercially available semiconductor ozone sensor.

It can be observed from the comparison results in Fig. 5b that the concentration curve S' obtained by the inorganic metal oxide 21 whose weight ratio of titanium dioxide and indium oxide is 1:3 is more sensitive to the introduction of ozone than that of the commercially available semiconductor-type ozone. The concentration signal P of the detector showed a faster response.

As shown in FIGS. 6a to 6b, FIG. 6a is a schematic diagram of the resistance signal of the inorganic metal oxide 21 whose weight ratio of titanium dioxide and indium oxide is 1:4; FIG. 6b is an inorganic metal whose weight ratio of titanium dioxide and indium oxide is 1:4. A comparison diagram of oxide 21 and a commercially available semiconductor ozone sensor; during the detection process, ozone is injected into the detection environment every 500 seconds, and a detection curve of the ozone sensing element 100 can be observed in FIG. 6a S, the detection device samples the ozone sensing element 100 once per second to form the detection curve S, and then performs differential processing on the detection curve S to convert the detection curve S into the concentration curve S' of FIG. 6b, and then Compare with a concentration signal P of a commercially available semiconductor-type ozone sensor.

It can be observed from the comparison results in Fig. 6b that the concentration curve S' obtained by the inorganic metal oxide 21 with the weight ratio of titanium dioxide and indium oxide 1:4 is more sensitive to the introduction of ozone than the commercially available semiconductor-type ozone. The concentration signal P of the detector has a very fast response and detection sensitivity.

As shown in FIGS. 7a to 7b, FIG. 7a is a schematic diagram of the resistance signal of the inorganic metal oxide 21 with the weight ratio of titanium dioxide and indium oxide 1:5; FIG. 7b is the inorganic metal with the weight ratio of titanium dioxide and indium oxide 1:5 A comparison diagram of oxide 21 and a commercially available semiconductor ozone sensor; during the detection process, ozone is injected into the detection environment every 500 seconds, and a detection curve of the ozone sensor element 100 can be observed in FIG. 7a S, the detection device samples the ozone sensing element 100 once every second to form the detection Then, the detection curve S is subjected to differential processing, and the detection curve S is converted into the concentration curve S' of Fig. 7b, and then compared with a concentration signal P of a commercially available semiconductor ozone sensor.

From the comparison results in Figure 7b, it can be observed that the concentration curve S' obtained by the inorganic metal oxide 21 whose weight ratio of titanium dioxide and indium oxide is 1:5 is more sensitive to the introduction of ozone than the commercially available semiconductor-type ozone. The concentration signal P of the detector has a very fast response and has the best detection sensitivity.

8a to 8b, FIG. 8a is a schematic diagram of the resistance signal of the inorganic metal oxide 21 with the weight ratio of titanium dioxide and indium oxide 1:6; FIG. 8b is the inorganic metal with the weight ratio of titanium dioxide and indium oxide 1:6 A comparison diagram of oxide 21 and a commercially available semiconductor ozone sensor; during the detection process, ozone is injected into the detection environment every 500 seconds, and a detection curve of the ozone sensing element 100 can be observed in FIG. 8a S, the detection device samples the ozone sensing element 100 once every second to form the detection curve S, and then performs differential processing on the detection curve S to convert the detection curve S into the concentration curve S' of FIG. 8b, and then Compare with a concentration signal P of a commercially available semiconductor-type ozone sensor.

It can be observed from the comparison results in Fig. 8b that the concentration curve S' obtained by the inorganic metal oxide 21 whose weight ratio of titanium dioxide and indium oxide is 1:6 is more sensitive to the introduction of ozone than that of the commercially available semiconductor-type ozone. The concentration signal P of the detector has a very fast response and detection sensitivity.

As shown in Figures 9a to 9b, Figure 9a is a schematic diagram of the resistance signal of the inorganic metal oxide 21 with a weight ratio of titanium dioxide to indium oxide 2:1; Figure 9b is an inorganic metal with a weight ratio of titanium dioxide to indium oxide 2:1 A comparison diagram of oxide 21 and a commercially available semiconductor ozone sensor; during the detection process, ozone is injected into the detection environment every 500 seconds, and a detection curve of the ozone sensing element 100 can be observed in FIG. 9a S, the detection device samples the ozone sensing element 100 once every second to form the detection curve S, and then performs differential processing on the detection curve S to convert the detection curve S into the concentration shown in FIG. 9b The degree curve S' is then compared with a concentration signal P of a commercially available semiconductor ozone sensor.

From the comparison results in Figure 9b, it can be observed that the concentration curve S' obtained by the inorganic metal oxide 21 with a weight ratio of titanium dioxide and indium oxide 2:1 is also noisy, although it has a slight response to the introduction of ozone, but Compared with the concentration signal P of the commercially available semiconductor ozone sensor, it does not show a better detection effect.

From the test results of FIGS. 3 a to 9 b , it can be observed that the concentration curve S′ obtained by the inorganic metal oxide 21 with the weight ratio of titanium dioxide and indium oxide being 1:3 to 1:6 is compared with the commercially available semiconducting ozone. The concentration signal P of the sensor has a faster detection response time and better sensitivity, and the inorganic metal oxide 21 with the weight ratio of titanium dioxide and indium oxide being 1:5 has the best ozone detection Effect.

In summary, the ozone sensing device 100 of the present invention provides users with ozone detection at room temperature without the need to operate in a high temperature environment. In addition to reducing the packaging cost of materials for the ozone sensing device 100, it can also save The energy consumption of the overall detection. In addition, by adjusting the weight ratio of titanium dioxide and indium oxide, it can quickly respond to ozone in the environment and obtain an accurate ozone concentration.

The above-mentioned embodiments are only used to illustrate the present creation, and are not intended to limit the scope of the present creation. All modifications or changes that do not violate the spirit of this creation belong to the scope of this creation's intention to protect.

100: Ozone sensing element

10: Substrate

20: Reactive Layer

21: Inorganic metal oxides

22: Coating agent

30: Electrode layer

31: The first electrode

32: Second electrode

T: Detection Department

C: connecting part

Claims (10)

An ozone sensing element, comprising: a substrate having a surface; and a reaction layer stacked on the surface, the reaction layer including an inorganic metal oxide, the inorganic metal oxide including titanium dioxide and indium oxide , wherein the weight ratio of the titanium dioxide to the indium oxide is 1:3 to 1:6. The ozone sensing element according to claim 1, wherein the weight ratio of the titanium dioxide to the indium oxide in the inorganic metal oxide is 1:4.5 to 1:5.5. The ozone sensing element according to claim 1, wherein the reaction layer further comprises a coating agent. The ozone sensing element according to claim 3, wherein the coating agent is polyphthalamide, tetrabutyl titanate, polyvinyl alcohol, stannous octoate, ethyl cellulose, Triton X-100 , titanium tetraisopropoxide, ethanol, deionized water, isopropanol, tin chloride, stannous chloride or one or a combination thereof. The ozone sensing element according to claim 1, wherein the thickness of the reaction layer is 25±5 μm, and the thickness of the substrate is 0.1 cm. The ozone sensing element according to claim 1 or 5, wherein the material of the substrate is alumina, ITO glass or FTO glass. The ozone sensing element as claimed in claim 1, further comprising an electrode layer disposed on the substrate, the electrode layer comprising a first electrode and a second electrode, the first electrode and the second electrode respectively have a detection part and a connection part. The ozone sensing element according to claim 7, wherein the detection portions of the first electrode and the second electrode are generally comb-shaped and interlaced. The ozone sensing element according to claim 7, wherein the material of the detection portion of the first electrode and the second electrode is gold. The ozone sensing element according to claim 7, wherein the material of the connecting portion of the first electrode and the second electrode is platinum.

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