TWM627614U - Chip structure - Google Patents

Abstract

The present invention is a chip structure. The chip mainly passes through a bottom layer, a buffer layer, a lower waveguide layer, a multilayer quantum well, an upper waveguide layer, a P-N inversion layer, a grating layer, a cap layer, and etching. The combined design of a stop layer, a contact layer, a ridged waveguide layer, a silicon dioxide layer, a P-side electrode layer, and an N-side electrode layer provides a stable laser beam for methane gas sensing applications, and The lasing wavelength is 1653.7nm, in order to achieve high-precision methane gas leakage detection, so that it has strong temperature stability and high efficiency.

Description

wafer structure

This work is about a chip structure, especially a kind of chip structure that can realize high-precision methane gas leakage detection, has strong temperature stability and high efficiency, and is suitable for a laser chip or similar structure for methane gas detection.

As we all know, gas explosion is a type of accident that is extremely harmful in coal production, which poses a great threat to the safety of the people. Gas companies urgently need high-reliability methane gas detectors to meet complex on-site needs. In addition, according to the data collation of MHIDAS (Major Hazard Incident Data Serbice, major safety accident database) database, methane gas transportation accidents accounted for 70.8% of the total gas accidents; See, most of them are caused by leakage. If the methane gas accident is controlled and reduced in time, the danger of using methane gas will be greatly reduced. It can be seen that the timely and accurate leak detection of methane gas pipelines and transportation processes plays an important role in improving the level of safety management and avoiding and preventing the occurrence of methane gas accidents.

Tunable Diode Laser Absorption Spectroscopy (TDLAS) is a technique used to measure the amount of light absorbed by a gas. The gas concentration is obtained by analyzing the selective absorption of the measuring beam by the gas. With the continuous growth of TDLAS technology, The development of corresponding narrow linewidth, high efficiency, and long life laser chips for gas detection has received great attention at home and abroad.

Therefore, in view of the above deficiencies, the author hopes to propose a chip structure with the performance of methane gas detection, so that users can easily operate and assemble. The creative motivation that the creator wants to research and create.

The main purpose of this creation is to provide a chip structure, the chip mainly transmits a bottom layer, a buffer layer, a lower waveguide layer, a multilayer quantum well, an upper waveguide layer, a P-N inversion layer, a grating layer, a The combined design of a cap layer, an etch stop layer, a contact layer, a ridged waveguide layer, a silicon dioxide layer, a P-side electrode layer, and an N-side electrode layer provides a stable solution for methane gas sensing applications. The laser beam, and the lasing wavelength is 1653.7nm, to achieve high-precision methane gas leak detection, so that it has strong temperature stability and high efficiency, thereby increasing the overall practicability.

Another object of this creation is to provide a chip structure through which a stable single-mode laser can be output, with a line width of several megahertz, which is much smaller than the absorption line width of gas molecules (hundred megahertz), which is in line with absorption spectroscopy technology The light source requirements are very suitable for methane gas sensing applications. And the wavelength of the laser can be tuned by temperature and current. Generally, temperature tuning is used to stabilize the wavelength of the laser near the gas absorption peak, and then the current tuning method is used to make the wavelength of the laser scan the gas absorption peak to achieve high performance. Accurate methane gas detection. Therefore, it has the performance of good tunability and approximately linear change of wavelength with current, which is convenient for realizing high-precision methane gas detection and application, thereby increasing the overall usability.

In order to further understand the features, characteristics and technical content of this creation, please refer to the following detailed descriptions and accompanying drawings of this creation, but the attached drawings are only for reference and description, and are not intended to limit this creation.

A: Wafer

1: bottom layer

2: Buffer layer

3: Lower waveguide layer

4: Multilayer Quantum Well

5: Upper waveguide layer

6: P-N inversion layer

7: Grating layer

8: cover layer

9: Etch stop layer

10: Contact layer

11: Ridge-stripe waveguide layer

12: Silicon dioxide layer

13: P surface electrode layer

14: N side electrode layer

Figure 1 is a schematic diagram of the wafer grating layer of this creation.

Figure 2 is a schematic diagram of the combination of the chips in this creation.

Please refer to Figures 1 to 2, which are schematic diagrams of an embodiment of the present invention, and the best embodiment of the chip structure of the present invention is suitable for a laser chip for methane gas detection or a similar structure, so as to achieve high-precision methane Gas leak detection has strong temperature stability and high efficiency.

In the chip structure of this creation, the chip A mainly passes through a bottom layer 1, a buffer layer 2, a lower waveguide layer 3, a multilayer quantum well 4, an upper waveguide layer 5, a P-N inversion layer 6, and a grating layer. 7. A cap layer 8, an etch stop layer 9, a contact layer 10, a ridge stripe waveguide layer 11, a silicon dioxide layer 12, a P-surface electrode layer 13 and an N-surface electrode layer 14 (as shown in Fig. 2 shown), and the wafer A is stacked from top to bottom by a bottom layer 1, wherein the bottom layer 1 is N-type indium phosphide (N-InP), and the bottom layer 1 uses a low pressure metal organic chemical vapor deposition method. made.

The buffer layer 2 is combined with the bottom layer 1, and the buffer layer 2 is located above the bottom layer 1, wherein the buffer layer 2 is indium phosphide (InP), and the thickness is 1um, and the buffer layer 2 is It is formed by chemical reaction of three-group source and five-group source. In addition, the lower waveguide layer 3 is connected to the buffer layer 2 Combined, and the lower waveguide layer 3 is located above the buffer layer 2, wherein the lower waveguide layer 3 is indium gallium arsenide phosphorus (InGaAsP), and the thickness is 100nm, and is matched with indium gallium arsenide phosphorus (InGaAsP) and A material with a lasing wavelength of 1653.7 nm.

In addition, the multi-layer quantum well 4 is combined with the lower waveguide layer 3, and the multi-layer quantum well 4 is located above the lower waveguide layer 3, wherein the multi-layer quantum well 4 is indium gallium arsenide (InGaAs), and the multi-layer quantum well 4 is Well 4 is provided with four compressively strained quantum wells, and the four compressively strained quantum wells are made of a material matching with InGaAsP and having a lasing wavelength of 1653.7 nm. In addition, the upper waveguide layer 5 is combined with the multilayer quantum well 4, and the upper waveguide layer 5 is located above the multilayer quantum well 4, wherein the upper waveguide layer 5 is made of indium gallium arsenide phosphorus (InGaAsP) and has a thickness of 100nm, and use a material that matches indium gallium arsenide phosphorus (InGaAsP) and has a lasing wavelength of 1653.7nm, so that the quality of the indium phosphide (InP) surface can be improved to improve device efficiency.

In addition, the P-N inversion layer 6 is combined with the upper waveguide layer 5, and the P-N inversion layer 6 is located above the upper waveguide layer 5, and the grating layer 7 is combined with the P-N inversion layer 6, and the The grating layer 7 is located above the P-N inversion layer 6 (as shown in FIG. 1 ), wherein the grating layer 7 adopts the holographic exposure method and the RIE (Reactive Ion Etching, reactive ion etching) method, and is in the P-N inversion type. The layer 6 and the upper waveguide layer 5 are fabricated, and the depth is about 70 nm. The refractive index of the active region of the grating layer 7 is 3.232, and the grating period is 205.3 nm.

Then, a cap layer 8 is combined on the grating layer 7, wherein the cap layer 8 is P-type indium phosphide (P-InP), and the thickness is 1.8um. In addition, the etch stop layer 9 is combined with the cap layer 8, and the etch stop layer 9 is located above the cap layer 8, and the contact layer 10, the ridge strip waveguide layer 11 and the silicon dioxide are successively upwards. layer 12, wherein the contact layer 10 is bonded to the etch stop layer 9, and the contact layer 10 is located above the etch stop layer 9, wherein the contact layer 10 The system is P-type indium gallium arsenide (P-InGaAs), and the thickness is 200 nm. In addition, the ridged waveguide layer 11 is combined with the contact layer 10, and the ridged waveguide layer 11 is located above the contact layer 10, and the silicon dioxide layer 12 is combined with the ridged waveguide layer 11, and the The silicon dioxide layer 12 is located above the ridge-stripe waveguide layer 11 and has a thickness of 400 nm.

In addition, the P-surface electrode layer 13 is combined with the silicon dioxide layer 12, and the P-surface electrode layer 13 is located above the silicon dioxide layer 12, wherein the P-surface electrode layer 13 is TiPtAu (titanium platinum), And the thickness is 500nm. In addition, the N-surface electrode layer 14 is combined with the bottom layer 1, and the N-surface electrode layer 14 is located under the bottom layer 1, wherein the N-surface electrode layer 14 is AuGeNi (gold germanium nickel), and the thickness is 100um. To complete the fabrication of the entire methane gas detection laser chip.

Furthermore, through the chip A, a stable single-mode laser can be output, with a line width of several megahertz, which is much smaller than the absorption line width of gas molecules (hundred megahertz), which meets the requirements of absorption spectroscopy technology for light sources, and is very suitable for methane gas. sensing applications. And the wavelength of the laser can be tuned by temperature and current. Generally, temperature tuning is used to stabilize the wavelength of the laser near the gas absorption peak, and then the current tuning method is used to make the wavelength of the laser scan the gas absorption peak to achieve high performance. Accurate methane gas detection. The above-mentioned laser chip for methane gas detection can provide a stable laser beam for methane gas sensing applications, and the lasing wavelength is 1653.7 nm, so as to realize high-precision methane gas leakage detection, which has strong temperature stability and high temperature stability. Efficient performance.

From the above detailed description, those skilled in the art can understand that this creation can indeed achieve the above-mentioned purpose, and it is in compliance with the provisions of the Patent Law, so a patent application can be filed.

However, the above are only the preferred embodiments of this creation, and should not limit the scope of implementation of this creation; therefore, any simple equivalent changes and modifications made according to the scope of the patent application for this creation and the content of the creation description , shall still fall within the scope of this creative patent.

A: Wafer

1: bottom layer

2: Buffer layer

3: Lower waveguide layer

4: Multilayer Quantum Well

5: Upper waveguide layer

6: P-N inversion layer

7: Grating layer

8: cover layer

9: Etch stop layer

10: Contact layer

11: Ridge-stripe waveguide layer

12: Silicon dioxide layer

13: P surface electrode layer

14: N side electrode layer

Claims (10)

A chip structure, the chip is provided with: a bottom layer, the bottom layer is N-type indium phosphide (N-InP); a buffer layer, the buffer layer is combined with the bottom layer, and the buffer layer is located above the bottom layer; a lower waveguide layer, the lower waveguide layer is combined with the buffer layer, and the lower waveguide layer is located above the buffer layer; a multi-layer quantum well, the multi-layer quantum well is combined with the lower waveguide layer, and the multi-layer quantum well is located above the lower waveguide layer; an upper waveguide layer, the upper waveguide layer is combined with the multilayer quantum well, and the upper waveguide layer is located above the multilayer quantum well; a P-N inversion layer, the P-N inversion layer is combined with the upper waveguide layer, and the P-N inversion layer is located above the upper waveguide layer; a grating layer, the grating layer is combined with the P-N inversion layer, and the grating layer is located above the P-N inversion layer; a cap layer, the cap layer is combined with the grating layer, and the cap layer is located above the grating layer; an etch stop layer, the etch stop layer is combined with the cap layer, and the etch stop layer is located above the cap layer; a contact layer, the contact layer is combined with the etch stop layer, and the contact layer is located above the etch stop layer; a ridged waveguide layer, the ridged waveguide layer is combined with the contact layer, and the ridged waveguide layer is located above the contact layer; a silicon dioxide layer, the silicon dioxide layer is combined with the ridge strip waveguide layer, and the silicon dioxide layer is located above the ridge strip waveguide layer; a P-side electrode layer, the P-side electrode layer is combined with the silicon dioxide layer, and the P-side electrode layer is located above the silicon dioxide layer; and An N-surface electrode layer, the N-surface electrode layer is combined with the bottom layer, and the N-surface electrode layer is located under the bottom layer. The chip structure of claim 1, wherein the buffer layer is further made of indium phosphide (InP) and has a thickness of 1 um. The chip structure of claim 1, wherein the lower waveguide layer and the upper waveguide layer are further made of indium gallium arsenide phosphorus (InGaAsP), and have a thickness of 100 nm. The chip structure of claim 3, wherein the lower waveguide layer and the upper waveguide layer are further made of materials matching with indium gallium arsenide phosphorus (InGaAsP) and the lasing wavelength is 1653.7 nm. The chip structure of claim 1, wherein the multilayer quantum well system is further indium gallium arsenide (InGaAs), and the multilayer quantum well system is further provided with four compressive strain quantum wells, and the four compressive strain The quantum well system further adopts the material matched with indium gallium arsenide phosphorus (InGaAsP) and the lasing wavelength is 1653.7 nm. The wafer structure as described in claim 1, wherein the grating layer further has a refractive index of 3.232 in the active region, and the grating period is 205.3 nm. The chip structure of claim 1, wherein the cap layer is further made of P-type indium phosphide (P-InP), and the thickness is 1.8um. The chip structure of claim 1, wherein the contact layer is further made of P-type indium gallium arsenide (P-InGaAs), and the thickness is 200 nm. The wafer structure as described in claim 1, wherein the P-surface electrode layer is further made of TiPtAu (titanium platinum), and the thickness is 500 nm. The wafer structure as described in claim 1, wherein the N-surface electrode layer is further made of AuGeNi (gold germanium nickel), and the thickness is 100um.

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