TWM620449U - Fingerprint recognition sensor - Google Patents

Abstract

A fingerprint recognition sensor includes a processing unit and a plurality of fingerprint recognition sensing units, coupled to the processing unit, wherein each of plurality of fingerprint recognition sensing units includes a pixel lighting area including at least a pixel lighting sub-area; a metal driving electrode layer, configured to generate a driving signal; and a metal receiving electrode layer, configured to receive the driving signal generated by the metal driving electrode layer; wherein the at least a pixel lighting sub-area is surrounded by the metal driving electrode layer and the metal receiving electrode layer in a top view; wherein the fingerprint recognition sensor is operated in a touch mode when the metal driving electrode layer and the metal receiving electrode layer of at least one of fingerprint recognition sensing unit of the plurality fingerprint recognition sensing units are short by the processing unit.

Description

Fingerprint recognition sensor

This creation refers to a fingerprint recognition sensor, especially a fingerprint recognition sensor that integrates display, touch and fingerprint recognition.

The functions of today's consumer electronic products are changing with each passing day. For example, the display panels on smartphones and tablets have display, touch, and fingerprint recognition functions. However, the above functions are composed of different modules, and different integrated circuits (ICs) drive the corresponding modules. Under this circumstance, it is more complicated for manufacturers to integrate the above-mentioned modules, and the manufacturing cost also increases accordingly. Therefore, how to integrate the above-mentioned functions on the same display panel and the same integrated circuit becomes an important issue.

Therefore, the present invention provides a fingerprint recognition sensor to integrate the functions of an active-matrix organic light-emitting diode (AMOLED) display, touch and fingerprint recognition.

This creative embodiment discloses a fingerprint recognition sensor, which includes a processing unit; and a plurality of fingerprint recognition sensing units, wherein each fingerprint recognition sensing unit includes a pixel light-emitting area The domain includes at least one pixel light-emitting sub-region; a metal driving electrode layer for generating a driving signal; and a metal receiving electrode layer for receiving the driving signal generated by the metal driving electrode layer; wherein the at least one pixel emits light The sub-area is surrounded by the metal driving electrode layer and the metal receiving electrode layer in a top view; wherein when the processing unit the metal driving electrode layer of at least one fingerprint recognition sensor unit of the plurality of fingerprint recognition sensor units and When the metal receiving electrode layer is short-circuited, the fingerprint recognition sensor is operated in a touch mode.

10: Fingerprint recognition sensor

102: Processing Unit

104, 304, 404: fingerprint recognition sensor unit

MDE: Metal drive electrode layer

MG: Metal breakpoint

MRE: Metal receiving electrode layer

PLA: pixel light emitting area

PLA_sub: pixel light-emitting sub-area

PMDE_1: the first main metal drive electrode

PMDE_2: The second main metal drive electrode

PMRE_1: The first main metal receiving electrode

PMRE_2: The second main metal receiving electrode

R1-Rm, Rx: Metal receiving electrode

SMDE: Secondary metal drive electrode

SMRE: Secondary metal receiving electrode

S_1: First side

S_2: second side

S_3: Third side

S_4: Fourth side

T1-Tn, Tx: metal drive electrodes

Figure 1 is a schematic diagram of a fingerprint recognition sensor according to one of the creative embodiments.

Figures 2 to 4 are schematic diagrams of a fingerprint recognition sensing unit of one creative embodiment.

Figures 5 and 6 are schematic diagrams of stacking the fingerprint recognition sensor of the creative embodiment.

Please refer to FIG. 1 and FIG. 2. FIG. 1 is a schematic diagram of a fingerprint recognition sensor 10 according to a creative embodiment. The fingerprint recognition sensor 10 includes a processing unit 102 and a plurality of fingerprint recognition sensing units 104. The processing unit 102 may be a device with an arithmetic function and integrated with an integrated circuit (IC) to process the signal received by the fingerprint recognition sensor 10, and the fingerprint recognition sensor unit 104 is coupled to the processing unit 102. Operable in a fingerprint recognition mode and operable in a touch mode. FIG. 2 is a schematic diagram of the fingerprint recognition sensor unit 104 of the fingerprint recognition sensor 10. The fingerprint recognition sensing unit 104 includes a pixel light-emitting area PLA, a metal driving electrode layer MDE, and a metal receiving electrode layer MRE. The pixel light-emitting area PLA may be an Active-matrix organic light-emitting diode (Active-matrix organic light-emitting diode, AMOLED) light-emitting area, and includes at least one pixel light-emitting sub-area PLA_sub, the pixel light-emitting sub-area PLA_sub can be one light-emitting pixel or more than one light-emitting pixel It is composed of pixels and can be a quadrilateral. The metal driving electrode layer MDE is used for generating a driving signal, and the metal receiving electrode layer MRE is used for receiving the driving signal generated by the metal driving electrode layer MDE. When the fingerprint recognition sensor is operated in a fingerprint recognition mode by the processing unit 102, the processing unit 102 can recognize the driving signal from the metal driving electrode layer MDE received by the metal receiving electrode layer MRE of each fingerprint recognition sensing unit 104, To determine a wave peak and a wave valley of a fingerprint, and according to the degree of damage of the electric force line between the metal driving electrode layer MDE and the metal receiving electrode layer MRE of the fingerprint wave peak and valley, the effect of fingerprint identification is achieved. On the other hand, the processing unit 102 can also be applied to a self-capacitive touch recognition sensing unit (that is, the processing unit 102 can regard the metal driving electrode layer MDE and the metal receiving electrode layer MRE as the same unit, and perform self-capacitive touch recognition in a unified manner. ). In this way, the fingerprint recognition sensor 10 of this creative embodiment can integrate the functions of display, touch, and fingerprint recognition into the same integrated circuit, and realize the display, touch, and fingerprint recognition under the same hardware architecture. Features.

Specifically, as shown in Figure 2, the metal driving electrode layer MDE includes a plurality of metal driving electrodes T1-Tn (dark solid lines), and the metal receiving electrode layer MRE includes a plurality of metal receiving electrodes R1-Rm ( Light solid line). Each metal driving electrode T1-Tn includes a first main metal driving electrode PMDE_1, a second main metal driving electrode PMDE_2, and a plurality of secondary metal driving electrodes SMDE, wherein the first main metal driving electrode PMDE_1 is along a first direction It is arranged that the second main metal driving electrode PMDE_2 is parallel to the first main metal driving electrode PMDE_1 and is arranged along the first direction. A plurality of secondary metal drive electrodes SMDE are arranged along a second direction perpendicular to the first direction, and each of the secondary metal drive electrodes SMDE is arranged in parallel to the first primary metal drive electrodes PMDE_1 and the first metal drive electrode SMDE. Two main metal driving electrode PMDE_2. It is worth noting that, in the embodiment of FIG. 2, the inner angle of the included angle between the first direction and the second direction is 90 degrees.

On the other hand, each metal receiving electrode R1-Rm includes a first main metal receiving electrode Pole PMRE_1, a second primary metal receiving electrode PMRE_2, and a plurality of secondary metal receiving electrodes SMRE, wherein the first primary metal receiving electrode PMRE_1 is arranged along the second direction, and the second primary metal receiving electrode PMRE_2 is parallel to the first primary metal receiving electrode The electrode PMRE_1 is arranged along the second direction. The plurality of secondary metal receiving electrodes SMRE are arranged along the first direction, and each secondary metal receiving electrode SMRE of the secondary metal receiving electrodes SMRE is arranged in parallel on the first primary metal receiving electrode PMRE_1 and the second primary metal receiving electrode PMRE_2.

Therefore, in the embodiment in FIG. 2, each pixel light-emitting sub-region PLA_sub is surrounded by the metal driving electrode layer MDE and the metal receiving electrode layer MRE in a top view. In other words, the pixel light-emitting area PLA in Figure 2 is a rectangle, and each pixel light-emitting sub-area PLA_sub can be defined by a first side S_1, a second side S_2, a third side S_3, and a fourth side S_4. The first side S_1 is parallel to the third side S_3, and the second side S_2 is parallel to the fourth side S_4. The first main metal driving electrode PMDE_1 and the second main metal driving electrode PMDE_2 of the metal driving electrode layer MDR are respectively parallel to the first side S_1 and the third side S_3 of each pixel light-emitting sub-region PLA_sub of the pixel light-emitting region PLA, and the metal driving electrode The secondary metal driving electrode SMDE of the layer MDE is respectively parallel to the second side S_2 and the fourth side S_4 of each pixel light-emitting sub-region PLA_sub of the pixel light-emitting region PLA.

Similarly, the first main metal receiving electrode PMRE_1 and the second main metal receiving electrode PMRE_2 of the metal receiving electrode layer MRE are respectively parallel to the second side S_2 and the fourth side S_4 of each pixel light-emitting sub-region PLA_sub of the pixel light-emitting region PLA, The secondary metal receiving electrode SMRE of the metal receiving electrode layer MRE is respectively parallel to the first side S_1 and the third side S_3 of each pixel light-emitting sub-region PLA_sub of the pixel light-emitting region PLA.

In addition, it can be seen from the embodiment in Figure 2 that each metal driving electrode T1-Tn There is a metal break point MG therebetween and between each metal receiving electrode R1-Rm. Specifically, a metal break point MG is included between each metal driving electrode SMDE of the metal driving electrode T1 and the first main metal driving electrode PMDE_1 of the metal driving electrode T2. Similarly, each time the metal receiving electrode SMRE of the metal receiving electrode R1 and the main metal receiving electrode PMRE_1 of the metal receiving electrode R2 include a metal wire break point MG.

The shape of the pixel light-emitting sub-region PLA_sub is not limited to the rectangle in Figure 2. In another embodiment, the pixel light-emitting sub-region PLA_sub may be a rhombus. Please refer to Figure 3. Figure 3 is a schematic diagram of the fingerprint recognition sensor unit 304, which is one of the creative embodiments. Since the fingerprint recognition sensor unit 304 is a modified embodiment of the fingerprint recognition sensor unit 104, the fingerprint recognition sensor unit 304 uses the fingerprint to identify the component symbols of the sensing unit 104. The difference from the fingerprint recognition and sensing unit 104 is that each pixel light-emitting sub-region PLA_sub of the fingerprint recognition and sensing unit 304 has a diamond shape.

It should be noted that the inner angle of the included angle between the first direction and the second direction is not limited to the embodiment shown in FIG. 2 and FIG. 3, and may be any angle. For example, the inner angle between the first direction and the second direction may be 45 degrees. Therefore, the inner angle between the first main metal driving electrode PMDE_1 and the second main metal driving electrode PMDE_2 and the secondary metal driving electrode SMDE is within 45 degrees. The angle is 45 degrees; the inner angle between the first main metal receiving electrode PMRE_1, the second main metal receiving electrode PMRE_2 and the secondary metal receiving electrode SMRE is 45 degrees.

Or, please refer to FIG. 4, which is a schematic diagram of a fingerprint recognition and sensing unit 404, which is one of the creative embodiments. In the embodiment of FIG. 4, the light-emitting sub-region PLA_sub of each pixel is surrounded by the metal driving electrode Tx of the metal driving electrode layer MDE and the metal receiving electrode Rx of the metal receiving electrode layer MRE in the top view, and is based on fingerprint peaks and valleys. Metal driving electrode layer MDE and metal receiving electrode The degree of damage to the power lines between the layers MRE achieves the effect of fingerprint recognition. In the embodiment of FIG. 4, each metal driving electrode Tx of the metal driving electrode layer MDE surrounds the pixel light-emitting sub-region PLA_sub, and is connected along the first direction. The metal receiving electrode Rx of the metal receiving electrode layer MRE surrounds the pixel light-emitting sub-region. The regions PLA_sub are connected and arranged along the second direction, and in a top view, the metal driving electrode Tx and the metal receiving electrode Rx present a parallelogram surrounding each pixel light-emitting sub-region PLA_sub.

Please refer to FIG. 5 and FIG. 6. FIG. 5 and FIG. 6 are schematic diagrams of stacking the fingerprint recognition sensor 10 according to the creative embodiment. In one embodiment, the fingerprint recognition sensor 10 of the present invention can be arranged on the encapsulation layer of a light-emitting diode, and the metal driving electrode Tx and the metal receiving electrode of the metal driving electrode layer MDE are shown in FIG. 5 The metal receiving electrode Rx of the layer MRE can be formed on the same stacked layer (that is, an insulating layer), or the metal driving electrode Tx of the metal driving electrode layer MDE and the metal receiving electrode Rx of the metal receiving electrode layer MRE can be formed as shown in Fig. 6 In different stacked layers (ie different insulating layers).

The above content is related to the embodiment when the processing unit 102 of the fingerprint recognition sensor 10 of the present creation operates the fingerprint recognition sensor 10 in the fingerprint recognition mode, due to the metal driving electrode layer MDE and the metal receiving electrode of the fingerprint recognition sensor unit The layer MRE is used to generate a driving signal and receive a sensing signal respectively, so as to realize a mutual capacitive fingerprint recognition sensor.

On the other hand, when the processing unit 102 can operate the fingerprint recognition sensor 10 in the touch mode through a multiplexer in a time division multiplexing mode, and when all the fingerprint recognition sensor units of the fingerprint recognition sensor 10 are When the metal driving electrode layer MDE and the metal receiving electrode layer MRE are short-circuited, the touch mode of the fingerprint recognition sensor 10 is self-capacitive. For example, the processing unit 102 may short-circuit the loops of the receiving metal driving electrode layer MDE and the metal receiving electrode layer MRE in the integrated circuit to realize a self-capacitive touch mode. Or, when the processing unit 102 sets at least one fingerprint recognition sensor unit among the fingerprint recognition sensor units When the metal driving electrode layer MDE and the metal receiving electrode layer MRE are short-circuited, the touch mode of the fingerprint recognition sensor 10 is a mutual capacitance type. For example, taking the embodiment shown in FIG. 3 as an example, the processing unit 102 may short-circuit the metal driving electrodes T1, T2, and short-circuit the metal driving electrodes T3, T4 of the metal driving electrode layer MDE, so as to realize a touch mode with mutual capacitance in partitions. In this way, the processing unit 102 can control the clock in a time-sharing manner to realize the functions of display, touch and fingerprint recognition through the same integrated circuit.

It is worth noting that the above embodiments describe the concept of this creation. Those skilled in the art can make appropriate modifications accordingly and are not limited to this. For example, the first direction and the second direction of the metal driving electrode layer and the metal receiving electrode layer are provided. The two directions are not limited to the aspect of the above-mentioned embodiment, the range of the pixel light-emitting area or the shape of the pixel light-emitting sub-area included in the fingerprint recognition sensing unit, etc., can be adjusted according to the needs of the user or the electronic device.

In summary, this creative embodiment provides a fingerprint recognition sensor to integrate the functions of an active matrix organic light emitting display, touch control, and fingerprint recognition.

10: Fingerprint recognition sensor

102: Processing Unit

104: Fingerprint recognition sensor unit

Claims (15)

A fingerprint recognition sensor, comprising: a processing unit; and a plurality of fingerprint recognition sensing units, coupled to the processing unit, wherein each fingerprint recognition sensing unit includes: a pixel light-emitting area, including at least one Pixel light-emitting sub-region; a metal driving electrode layer for generating a driving signal; and a metal receiving electrode layer for receiving the driving signal generated by the metal driving electrode layer; wherein the at least one pixel light-emitting sub-region is a top view The bottom is surrounded by the metal driving electrode layer and the metal receiving electrode layer; wherein when the processing unit short-circuits the metal driving electrode layer and the metal receiving electrode layer of at least one fingerprint recognition sensing unit of the plurality of fingerprint recognition sensing units At this time, the fingerprint recognition sensor is operated in a touch mode. The fingerprint recognition sensor according to claim 1, wherein when the processing unit operates the fingerprint recognition sensor in a fingerprint recognition mode, the processing unit recognizes the metal receiving electrode layer of each fingerprint recognition sensor unit The received driving signal is used to determine a peak and a valley of a fingerprint. The fingerprint recognition sensor according to claim 2, wherein the processing unit operates the fingerprint recognition sensor in the touch mode and a fingerprint recognition mode through a multiplexer in a time division multiplexing manner. The fingerprint recognition sensor according to claim 2, wherein the metal driving electrode layer and the The metal receiving electrode layer is formed on the same stacked layer. The fingerprint recognition sensor according to claim 2, wherein the metal driving electrode layer and the metal receiving electrode layer are formed on different stacked layers. The fingerprint recognition sensor according to claim 1, wherein the fingerprint recognition sensor is disposed on a light-emitting diode encapsulation layer. The fingerprint recognition sensor according to claim 1, wherein when the metal driving electrode layer and the metal receiving electrode layer of all the fingerprint recognition sensor units of the plurality of fingerprint recognition sensor units are short-circuited, the fingerprint recognition sensor The touch mode of the device is a self-capacitive type. The fingerprint recognition sensor according to claim 1, wherein when the processing unit short-circuits the metal driving electrode layer and the metal receiving electrode layer of at least one fingerprint recognition sensor unit of the plurality of fingerprint recognition sensor units, the fingerprint The touch mode of the identification sensor belongs to a mutual capacitance type. The fingerprint recognition sensor according to claim 1, wherein the metal driving electrode layer includes a plurality of metal driving electrodes, and each metal driving electrode includes: a first main metal driving electrode along a first direction A second main metal driving electrode, parallel to the first main metal driving electrode, and arranged along the first direction; and a plurality of secondary metal driving electrodes, along a second perpendicular to the first direction The direction is set, and each of the plurality of secondary metal drive electrodes is parallel to each other and perpendicular to the first primary metal drive electrode and the second primary metal drive electrode. The fingerprint recognition sensor according to claim 9, wherein a metal break point is included between the plurality of secondary metal drive electrodes disposed on the first primary metal drive electrode and the second primary metal drive electrode. The fingerprint recognition sensor according to claim 9, wherein the metal receiving electrode layer includes a plurality of metal receiving electrodes, and each metal receiving electrode includes: a first main metal receiving electrode along the second direction A second main metal receiving electrode, parallel to the first main metal receiving electrode, and arranged along the second direction; and a plurality of secondary metal receiving electrodes, along the first perpendicular to the second direction The direction is set, and each secondary metal receiving electrode of the plurality of secondary metal receiving electrodes is parallel to each other and perpendicular to the first primary metal receiving electrode and the second primary metal receiving electrode. The fingerprint recognition sensor according to claim 11, wherein a metal break point is included between the plurality of secondary metal receiving electrodes disposed on the first primary metal receiving electrode and the second primary metal receiving electrode. The fingerprint recognition sensor according to claim 10, wherein each pixel light-emitting sub-area of the pixel light-emitting area is composed of a first side, a second side, a third side, and a fourth side, and The first side is parallel to the third side, the second side is parallel to the fourth side, the first main metal driving electrode and the second main metal driving electrode of the metal driving electrode layer are respectively connected to the light emitting area of the pixel The first side and the third side of each pixel light-emitting sub-area are parallel, and the plurality of secondary metal driving electrodes of the metal driving electrode layer are respectively connected to each pixel light-emitting sub-area of the pixel light-emitting area The second side and the fourth side of the domain are parallel. The fingerprint recognition sensor according to claim 1, wherein the pixel light-emitting area is an active-matrix organic light-emitting diode (AMOLED) light-emitting area. The fingerprint recognition sensor according to claim 1, wherein the at least one pixel light-emitting sub-region is a quadrilateral.

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