TWM611419U - Plasma cleaning equipment - Google Patents

Abstract

The present disclosure relates to a plasma cleaning equipment which has a chamber, a radio frequency electrode, a stage, an electrode and a first shield. The first shield is adjacent to a top of the chamber, and the first shield has a plurality of first openings to form an unevenness underside. During the cleaning process of the plasma cleaning equipment, argon ions hit the aluminum substrate on the stage, and the sputtered aluminum reacts with the dirt in the chamber and is adsorbed on the unevenness underside of the first shield to reduce the chance of dirt attached to other parts of the chamber.

Description

Plasma cleaning equipment

The present invention relates to a plasma cleaning equipment, in particular to a plasma cleaning equipment that collects dirt through a first shutter.

In the semiconductor plasma cleaning process, plasma cleaning equipment is used to generate plasma, and the argon gas is dissociated and hits the wafer to hit the dirt on the surface of the wafer to achieve the effect of wafer cleaning. However, part of the dirt is suspended in the cavity, and may fall back to the surface of the wafer, and follow the wafer for subsequent processes, such as a metal coating process. If the dirt falls on the future wiring area of the wafer, the wires will not be able to conduct, thereby reducing the yield of the product.

One way to improve the above-mentioned problems is to replace the wafer with an aluminum substrate in a fixed cycle. The wafer is impacted by argon ions. The sputtered aluminum can react with the dirt remaining in the cavity and adhere to the shutter of the cavity to reduce The probability of dirt falling back to the wafer surface. However, since the plasma cleaning equipment uses the coil induced magnetic field to generate plasma to perform the plasma cleaning process, when the cavity is covered with too much metal, the penetration of the induced magnetic field will be hindered, thereby affecting the generation of plasma.

One way to improve the problem is to use lateral coils with ceramic vaults, and use a metal frame to shield the dirty aluminum, so as to reduce the chance of metal adhering to the ceramic vaults. However, the manufacturing process of the ceramic dome is complicated, time-consuming and costly.

Therefore, in order to overcome the shortcomings of the conventional technology, the embodiment of the present invention provides a plasma cleaning device, which can allow the dirty aluminum to be stuck on the uneven bottom surface of the first shutter of the plasma cleaning device (for example, the first In this way, the probability of dirt floating elsewhere in the cavity can be reduced, so as to increase the cleanliness of the wafer.

Based on at least one of the foregoing objectives, the plasma cleaning equipment provided by the embodiment of the present invention includes a cavity, a radio frequency electrode, a carrier, an electrode, and a first shield. The cavity has a cavity top and an accommodating space, and the radio frequency electrode is connected to the cavity top, the carrier is located in the accommodating space, and the electrode is connected to the carrier. The first shutter is located in the accommodating space of the cavity and is adjacent to the top of the cavity, wherein the first shutter has a plurality of first openings to form an uneven bottom surface.

Optionally, the first shutter further includes a plurality of first closing portions, and the first closing portion is adjacent to the top of the cavity and opposite to the first opening, so as to form a plurality of grooves in the first shutter.

Optionally, the first opening is a circular opening or an elongated opening.

Optionally, the cross-sectional area of the first opening is smaller than the cross-sectional area of the first closed portion.

Optionally, the groove further includes a first part and a second part, wherein the first opening is located in the first part, and the second part is adjacent to the first closed part, and the cross-sectional area of the first part is smaller than the cross-sectional area of the second part.

Optionally, the cross-sectional area of the groove gradually increases from the first opening toward the first closed portion.

Optionally, the cross-sectional area of the groove gradually decreases from the first opening toward the first closed portion.

Optionally, the cross-sectional area of the groove is tapered to zero from the first opening toward the first closed portion, and the plurality of first openings are in close proximity to each other, so that the plurality of grooves on the longitudinal section of the first shutter form zigzags shape.

Optionally, the cross-sectional area of the groove is maintained unchanged from the direction of the first opening toward the first closed portion.

Optionally, the uneven bottom surface of the first shutter is coated with a chemical material, so that the uneven bottom surface forms a concave-convex surface, so as to increase the surface area of the uneven bottom surface.

Optionally, the chemical material is yttrium oxide, aluminum oxide or ceramics.

Optionally, the plasma cleaning equipment further includes a second shutter, located between the first shutter and the carrier, wherein the second shutter has a plurality of lower openings and a plurality of upper openings, and the plurality of lower openings are connected to the plurality of upper openings. , To form a plurality of through holes in the second shutter.

In short, the plasma cleaning equipment provided by the embodiment of the present invention captures the dirty metal through the uneven bottom surface of the first shutter, so as to reduce the probability of the dirt existing elsewhere in the cavity. In this way, it can increase the wafer size. Cleanliness, therefore, has advantages in markets that require plasma cleaning equipment and processes (for example, semiconductors).

In order to make the above and other objectives, features and advantages of the present invention more obvious and understandable, detailed descriptions are made as follows in conjunction with the accompanying drawings.

In order to fully understand the purpose, features and effects of the present invention, a detailed description of the present invention is given with the following specific embodiments and accompanying drawings. The description is as follows.

First, please refer to FIG. 1. FIG. 1 is a schematic diagram of a plasma cleaning device according to an embodiment of the present invention. The plasma cleaning equipment 1 provided by the present invention includes a cavity 11, a radio frequency electrode E1, a carrier 13, an electrode E2 and a first shield 15. The cavity 11 has a cavity top 111 and an accommodating space S, and the material of the cavity top 111 is, for example, but not limited to ceramics.

A carrier 13 is provided in the accommodating space S of the cavity 11, and the carrier 13 is used to carry at least one substrate W. The plasma cleaning device 1 may also be provided with a cooling line 131 connected to the carrier 13 (for example, arranged inside the carrier 13) to adjust the temperature of the substrate W.

In the pre-clean process of the semiconductor, the substrate W is a wafer. Dirt on the wafer can be bombarded by the plasma in the pre-cleaning process, while the dirt and by-products (for example, aluminum oxide, silicon dioxide, silicon nitride, carbon, organic compounds, polluting gases, etc.) Attached or suspended in the cavity 11. When the plasma cleaning device 1 is cleaned, a metal substrate (for example, an aluminum substrate) is used as the substrate W, and aluminum can be sputtered out by the plasma and react with dirt and by-products or cause dirt and by-products Attaches to the sputtered aluminum.

Specifically, the stage 13 is connected to the electrode E2, and the electrode E2 is located above the stage 13 so that the stage 13 carries the substrate W through the electrode E2. The top 111 of the cavity is connected to the radio frequency electrode E1, and the radio frequency electrode E1 and the electrode E2 can generate a potential difference in the accommodating space S of the cavity 11.

The side wall of the cavity 11 also has a process gas inlet 113 so that the process gas (for example, argon) can enter the accommodating space S of the cavity 11 through the process gas inlet 113. When the plasma cleaning device 1 is cleaned, the radio frequency electrode E1 and the electrode E2 generate a potential difference in the cavity 11 and enable the electrons to have energy. When electrons strike the argon gas passing into the cavity 11, the argon gas can be dissociated into argon ions, and high-density plasma is generated in the cavity 11. After the plasma in the cavity 11 is accelerated, the argon ions strike the aluminum substrate and the aluminum is sputtered out to react with dirt and by-products or make the dirt and by-products adhere to the sputtered aluminum.

The first shutter 15 is located in the accommodating space S and is adjacent to the top 111 of the cavity. The first shutter 15 has a plurality of first openings 151 to form an uneven bottom surface 15S, and dirt attached to the aluminum can be affected by pollution. The bottom surface 15S is flattened to capture, so as to reduce the probability of being suspended in the accommodating space S of the cavity 11. Since the first shutter 15 has an uneven bottom surface 15S, its surface area is larger than that of the flat bottom surface, that is, the surface area for adsorbing dirt is larger, so the frequency of replacing the first shutter 15 can be reduced, so that the plasma cleaning equipment can be extended 1 cleaning cycle. The material of the first shutter 15 can be quartz, ceramic, silicon carbide or alumina, but the present invention is not limited to this.

The plasma cleaning device 1 may further include a cooling channel connected to the top 111 of the cavity (not shown) to reduce the temperature of the cavity 11 to delay the diffusion of the dirt in the accommodating space S to the substrate W.

In one embodiment, the first shutter 15 has a plurality of first openings 151 and a plurality of first closing portions 153. The first closing portion 153 is adjacent to the top portion 111 of the cavity and opposite to the first opening 151 to form a plurality of grooves 155 in the first shield 15. The first opening 151 of the groove 155 faces the direction of the substrate W to accommodate the aluminum that is sputtered and carries dirt.

The uneven bottom surface 15S or the groove 155 of the first shutter 15 may be coated with a chemical material, wherein the chemical material may be yttrium oxide, aluminum oxide or ceramic. The purpose of applying chemical materials on the uneven bottom surface 15S or groove 155 is to create an uneven surface (for example, uneven surface) to increase the surface area of the uneven bottom surface 15S or groove 155, so that it is easier to catch or catch dirt. Contaminated aluminum.

The first shutter 15 can have a variety of different shapes. Please refer to FIG. 2. The first shutter 15 has a plurality of grooves 155 to form an uneven bottom surface 15S, and the cross-sectional area of the groove 155 is from the first opening 151 toward the first The direction of a closed portion 153 remains unchanged, that is, the cross-sectional area A151 of the first opening is equal to the cross-sectional area A153 of the first closed portion.

Please refer to FIG. 3, which is a schematic diagram of a first shutter according to another embodiment of the present invention. The first shutter 25 has a plurality of first openings 251 and a plurality of first closed portions 253, and the first closed portions 253 and the first openings 251 are opposite to each other to form a plurality of grooves 255 in the first shutter 25, wherein The cross-sectional area A251 of an opening is smaller than the cross-sectional area A253 of the first closed portion.

Specifically, the groove 255 includes a first portion 257 and a second portion 259, and the first opening 251 is located in the first portion 257, and the second portion 259 is adjacent to the first closed portion 253. In the longitudinal section of the first shutter 25, both the first part 257 and the second part 259 are rectangular, and the cross-sectional area A257 of the first part is smaller than the cross-sectional area A259 of the second part, so that the groove 255 presents a T-shape. Therefore, dirt is likely to be stuck on the second portion 259 with a larger cross-sectional area, and it is not easy to fall from the first opening 251 with a smaller cross-sectional area. Similarly, the groove 255 may be sprayed by ceramic or coated with yttrium oxide or aluminum oxide to increase the surface area of the groove 255 and strengthen the ability of the first shutter 25 to capture dirt.

In other embodiments, the groove 255 may not be divided into the first part 257 and the second part 259. Please refer to FIG. 4, which is a schematic diagram of a first shutter according to another embodiment of the present invention. As shown in FIG. 4, the first shutter 35 has a plurality of first openings 351 and a plurality of first closing portions 353, and the first The closing portion 353 and the first opening 351 are opposite to each other to form a plurality of grooves 355 in the first shutter 35, wherein the cross-sectional area A351 of the first opening is smaller than the cross-sectional area A353 of the first closing portion.

Specifically, the cross-sectional area of the groove 355 gradually increases from the first opening 351 toward the first closing portion 353, so that a lead angle 355A is formed between the groove sidewall 355W of the groove 355 and the first closing portion 353. The range of angle 355A is 40 to 90 degrees. When the lead angle 355A of the groove 355 is not a right angle, the dirt will not easily fall from the first opening 351 with a smaller cross-sectional area. Similarly, the groove 355 may be sprayed by ceramic or coated with yttrium oxide or aluminum oxide to increase the surface area of the groove 355 and strengthen the ability of the first shutter 35 to capture dirt.

In other embodiments, the groove 355 may be in other shapes. Please refer to FIG. 5, which is a schematic diagram of the first shutter according to still another embodiment of the present invention. As shown in FIG. 5, the first shutter 45 has a plurality of first openings 451 and a plurality of first closing portions 453, and the first closing portions 453 and the first openings 451 are opposite to each other to form a plurality of grooves in the first shutter 45 455, wherein the cross-sectional area A451 of the first opening is larger than the cross-sectional area A453 of the first closed portion.

Specifically, the cross-sectional area of the groove 455 gradually decreases from the first opening 451 toward the first closing portion 453, so that a lead angle 455A is formed between the groove sidewall 455W of the groove 455 and the first closing portion 453, wherein the guide The range of angle 455A is 90 to 130 degrees. When the cross-sectional area A451 of the first opening is larger than the cross-sectional area A453 of the first closed portion, the dirt is easily contained in the groove 455. Similarly, the groove 455 may be ceramic sprayed or coated with yttrium oxide or aluminum oxide to increase the surface area of the groove 455 and strengthen the ability of the first shutter 45 to capture dirt.

In other embodiments, the cross-sectional area A453 of the first closed portion may be zero. Please refer to FIG. 6, which is a schematic diagram of the first shutter according to still another embodiment of the present invention. As shown in FIG. 6, the cross-sectional area of the groove 555 gradually shrinks from the first opening 551 toward the first closed portion 553 to zero. Specifically, the cross-sectional area of the first closing portion 553 is zero, so that the two groove side walls 555W of the groove 555 have a contact point. Furthermore, the plurality of first openings 551 may be adjacent to each other, so that the plurality of grooves 555 of the first shutter 55 form a zigzag shape. In other embodiments, the plurality of first openings 551 may not be adjacent to each other (not shown). Similarly, the groove 555 may be sprayed by ceramic or coated with yttrium oxide or aluminum oxide to increase the surface area of the groove 555 and strengthen the ability of the first shutter 55 to capture dirt.

In other embodiments, the first shutters 15 to 55 may not have the first closing portions 153 to 553. Please refer to FIG. 7, which is a schematic diagram of the first shutter according to still another embodiment of the present invention. As shown in FIG. 7, the first shutter 65 has a plurality of first openings 651 (lower openings D651) to form an uneven bottom surface 65S, and has a plurality of second openings 652 (upper openings U652), wherein the upper opening U652 and the lower opening D651 They communicate with each other to form a through hole 653. In the longitudinal section of the first shutter 65, the through hole 653 is rectangular, but the present invention is not limited to this. Similarly, the first shutter 65 may be ceramic sprayed or coated with yttrium oxide or aluminum oxide to increase the surface area of the uneven bottom surface 65S and strengthen the first shutter 65 to capture dirt.

Please refer to FIG. 8, which is a schematic diagram of the first shutter according to still another embodiment of the present invention. As shown in FIG. 8, the second opening 752 (upper opening U752) and the first opening 751 (lower opening D751) of the first shutter 75 communicate with each other to form a through hole 753, and in the longitudinal section of the first shutter 75 , The through hole 753 is trapezoidal. In other embodiments, the through hole 753 may also be T-shaped (not shown). Similarly, the first shutter 75 may be ceramic sprayed or coated with yttrium oxide or aluminum oxide to increase the surface area of the uneven bottom surface 75S and strengthen the ability of the first shutter 75 to capture dirt.

When the plasma cleaning device 1 is provided with the first shields 15 to 75, the dirty aluminum can be prevented from adhering (or only partially adhering) on the top 111 of the cavity. Most of the dirty aluminum is captured by the first shutter 15~75, and it is difficult to form a continuous surface. In this way, the cavity 11 will not be covered by too much metal, so it is difficult to affect the penetration of the induced magnetic field, thereby stabilizing the generation of plasma.

Next, please refer to FIG. 9, which is a perspective view of a first shutter according to still another embodiment of the present invention. As shown in FIG. 9, the first opening 851 of the first shutter 85 is a circular opening C851, and the plurality of first openings 851 are arranged in a concentric circle and a radial shape. The shape and arrangement of the first openings 151 to 751 in any of the foregoing embodiments may be the same or similar to that of FIG. 9.

In other embodiments, the first opening 851 may not be entirely a circular opening C851. Please refer to FIG. 10 and FIG. 11. FIG. 10 and FIG. 11 are schematic diagrams of the first shutter according to still another embodiment of the present invention. The first opening 951 of the first shutter 95 can be a circular opening C951 and an elongated opening L951, and the elongated opening L951 can form a groove, wherein the circular opening C951 and the elongated opening L951 can be alternately arranged and present concentric circles And radial. The shape and arrangement of the first openings 151 to 751 in any of the foregoing embodiments may be the same or similar to those in FIG. 10 and FIG. 11.

In other embodiments, the circular opening C951 and the elongated opening L951 can be communicated with each other. Please refer to FIG. 12, which is a schematic diagram of the first shutter of still another embodiment of the present invention. The circular opening C1051 and the elongated opening L1051 of the first shutter 105 communicate with each other and present concentric and radial shapes.

In other embodiments, the plasma cleaning device 1 may have a plurality of first shutters. Please refer to FIG. 13, which is a schematic diagram of a plasma cleaning device according to another embodiment of the present invention. As shown in FIG. 13, the plasma cleaning device 2 is substantially the same as the foregoing embodiment, and the only difference is that the plasma cleaning device 2 also has a second shutter S75. The second shutter S75 is located between the first shutter 15 and the carrier 13, wherein the second shutter S75 has a plurality of lower openings D751 and a plurality of upper openings U752, and the lower opening D751 communicates with the upper opening U752, so that the second shutter S75 has a plurality of lower openings D751 and a plurality of upper openings U752. The shutter-shaped S75 has a plurality of through holes.

When the plasma cleaning equipment 2 has two shutters 15, S75, the dirty aluminum can be partially attached to the second shutter S75 first, and the dirt that penetrates the through holes of the second shutter S75 can be attached to the first shutter S75. A shutter 15. The through holes of the second shutter S75 and the grooves 155 of the first shutter 15 can be arranged alternately, but the present invention is not limited to this.

In one embodiment, aluminum substrates are used to replace wafers in a fixed cycle to clean the plasma cleaning device 1. In other embodiments, the cleaning of the plasma cleaning device 1 can also be performed at the same time as the pre-cleaning process of the wafer. The periphery of the electrode E2 of the plasma cleaning equipment 1, 2 may be surrounded by an aluminum ring (not shown). When the wafer pre-cleaning process is performed, the plasma can bombard the wafer and the aluminum ring at the same time. The dirt and by-products sputtered on the round surface can be combined with the aluminum bombarded from the aluminum ring and captured by the shutter.

In summary, compared with the prior art, the technical effects of the plasma cleaning equipment according to the embodiment of the present invention are described as follows.

In the conventional technology, during the pre-cleaning process of the wafer, part of the dirt will fall back to the surface of the wafer, or even fall on the future wiring area of the wafer, which will make the wires unable to conduct, thereby reducing the yield of the product. In contrast, the plasma cleaning equipment of the present invention can accommodate dirt through the uneven surface of the shutter. Because the uneven surface of the shutter has a large surface area, it can accommodate a larger amount of dirt, and the cleaning cycle can be prolonged. Moreover, the manufacturing cost of the shutter is not high, so the present invention provides a low-cost plasma cleaning equipment that can achieve effective cleaning.

The present invention has been disclosed in preferred embodiments above. However, those familiar with the art should understand that the above-mentioned embodiments are only used to describe the present invention and should not be interpreted as limiting the scope of the present invention. It should be noted that all changes and substitutions equivalent to the foregoing embodiments should be included in the scope of the present invention.

1, 2: Plasma cleaning equipment 11: Cavity 111: The top of the cavity 113: Process gas inlet 13: Stage 131: Cooling line 15, 25, 35, 45, 55, 65, 75, 85, 95, 105: first shutter 151, 251, 351, 451, 551, 651, 751, 851, 951, 1051: first opening 153, 253, 353, 453, 553: the first closed part 155, 255, 355, 455, 555: groove 15S, 65S, 75S: non-flat bottom surface 257: Part One 259: Part Two 355W, 455W, 555W: groove sidewall 652, 752: second opening 653, 753: Through hole A151, A251, A351, A451, A551: the cross-sectional area of the first opening A153, A253, A353, A453: the cross-sectional area of the first closed part A257: Cross-sectional area of the first part A259: The cross-sectional area of the second part C851, C951, C1051: round opening D651, D751: lower opening E1: RF electrode E2: Electrode L951, L1051: Long opening S: accommodating space S75: Second shutter U652, U752: upper opening W: substrate

Fig. 1 is a schematic diagram of a plasma cleaning device according to an embodiment of the present invention.

Fig. 2 is a schematic diagram of the first shutter of the embodiment of the present invention.

Fig. 3 is a schematic diagram of a first shutter according to another embodiment of the present invention.

Fig. 4 is a schematic diagram of a first shutter according to another embodiment of the present invention.

Fig. 5 is a schematic diagram of a first shutter according to still another embodiment of the present invention.

Fig. 6 is a schematic diagram of a first shutter according to still another embodiment of the present invention.

Fig. 7 is a schematic diagram of a first shutter according to still another embodiment of the present invention.

Fig. 8 is a schematic diagram of a first shutter according to still another embodiment of the present invention.

Fig. 9 is a three-dimensional schematic view of a first shutter according to still another embodiment of the present invention.

Fig. 10 is a schematic diagram of a first shutter according to still another embodiment of the present invention.

Fig. 11 is a three-dimensional schematic diagram of a first shutter according to still another embodiment of the present invention.

Fig. 12 is a schematic diagram of a first shutter according to still another embodiment of the present invention.

Fig. 13 is a schematic diagram of a plasma cleaning device according to another embodiment of the present invention.

1: Plasma cleaning equipment

11: Cavity

111: The top of the cavity

113: Process gas inlet

13: Stage

131: Cooling line

15: The first shutter

151: The first opening

153: The first closed part

155: Groove

15S: non-flat bottom surface

E1: RF electrode

E2: Electrode

S: accommodating space

W: substrate

Claims (10)

A plasma cleaning equipment, including: A cavity with a cavity top and an accommodating space; A radio frequency electrode connected to the top of the cavity; A carrier, located in the accommodating space, and used to carry at least one substrate; An electrode connected to the carrier; and A first shutter located in the accommodating space, the first shutter having a plurality of first openings and a plurality of first closing portions, and the first closing portion is adjacent to the top of the cavity and opposite to the first opening, A plurality of grooves are formed in the first shutter, wherein the first opening is a circular opening or a long opening. The plasma cleaning device according to claim 1, wherein the cross-sectional area of the first opening is smaller than the cross-sectional area of the first closed portion. The plasma cleaning device according to claim 1, wherein the groove further includes a first part and a second part, the first opening is located in the first part, and the second part is adjacent to the first closed part, wherein The cross-sectional area of the first part is smaller than the cross-sectional area of the second part. The plasma cleaning device according to claim 1, wherein the cross-sectional area of the groove gradually increases from the first opening toward the first closed portion. The plasma cleaning device according to claim 1, wherein the cross-sectional area of the groove gradually decreases from the first opening toward the first closed portion. The plasma cleaning device according to claim 5, wherein the cross-sectional area of the groove is gradually reduced to zero from the first opening toward the first closed portion, and the plurality of first openings are adjacent to each other, so that the first opening The plurality of grooves on the longitudinal section of a shutter form a zigzag shape. The plasma cleaning device according to claim 1, wherein the cross-sectional area of the groove is maintained constant from the first opening toward the first closed portion. The plasma cleaning device according to claim 1, wherein the groove of the first shutter is coated with a chemical material, so that the groove forms a concave-convex surface, so as to increase the surface area of the groove. The plasma cleaning equipment according to claim 8, wherein the chemical material is yttrium oxide, alumina or ceramics. The plasma cleaning equipment according to claim 1, further comprising a second shutter located between the first shutter and the carrier, wherein the second shutter has a plurality of lower openings and a plurality of upper openings, and the The lower opening communicates with the plurality of upper openings to form a plurality of through holes in the second shutter.

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