TWM608762U - Edge ring with radial projections for a substrate processing system - Google Patents

Abstract

An edge ring for a plasma processing system includes a first annular body configured to surround a substrate support during plasma processing. A radially outer surface of the first annular body is configured to define a predetermined gap when arranged adjacent to a facing side surface of a second annular body of a top edge ring that is exposed to plasma during plasma processing. P projections extend from the radially outer surface of the first annular body in a direction towards the facing side surface of the second annular body. The P projections are arranged in P spaced locations on the radially outer surface of the first annular body and are configured to reduce variation in the predetermined gap during plasma processing, where P is an integer greater than or equal to 3 and less than or equal to 8.

Description

Edge ring with radial protrusion for substrate processing system

This application claims the following priority: US Provisional Patent Application No. 62/976,088 filed on February 13, 2020. The entire disclosure of the application cited above is hereby incorporated by reference.

The present disclosure relates to edge rings, and more particularly to edge rings used in substrate processing systems.

The prior art description provided here is for the purpose of generally presenting the background of this disclosure. The work results of the inventors listed in this case, the scope described in this prior art paragraph and the description of the implementation mode of the prior art at the time of application are not expressly or implicitly recognized as the prior art against the content of this disclosure.

The substrate processing system performs processing on a substrate such as a semiconductor wafer. Examples of substrate processing include deposition, ashing, etching, cleaning, and/or other processes. The processing gas mixture can be supplied to the processing chamber to process the substrate. Plasma can be used to ignite gas to enhance chemical reactions.

The substrate is placed on the substrate support during processing. The annular edge ring is placed around and adjacent to the radial outer edge of the base plate. The edge ring can be used to shape or focus the plasma on the substrate. During operation, the exposed surfaces of the substrate and edge ring are etched by plasma. Therefore, the edge ring is depleted by the plasma and the effect of the edge ring on the plasma changes over time.

An edge ring for a plasma processing system includes a first ring-shaped body, which is arranged to surround a substrate support during the plasma processing. The radially outer surface of the first annular body is arranged to define a predetermined gap when the radially outer surface is arranged adjacent to the facing side surface of the second annular body of the top edge ring, and the top edge ring is in the plasma Exposure to plasma during processing. The P protrusions extend from the radially outer surface of the first annular body in a direction toward the facing side surface of the second annular body. The P protrusions are arranged at P spaced apart positions on the radially outer surface of the first annular body, and the P protrusions are arranged to reduce the change of the predetermined gap during the plasma treatment process, Wherein P is an integer greater than or equal to 3 and less than or equal to 8.

In another feature, the P convex portions are arranged at an interval of ^360°/P. The coating covers the P convex portions. The coating contains insulating material. The coating is selected from the group consisting of polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer (PFA), alumina, yttrium oxide, and yttrium fluoride.

In other features, the P protrusions extend from the radially outer surface of the first annular body by a predetermined distance in the range of 50 micrometers to 250 micrometers. The first annular body has an "L"-shaped cross-section. The first ring-shaped main system is arranged below the second ring-shaped main body in a cavity defined by the second ring-shaped main body. The P protrusions are arranged at an ^{interval of 360°} /P, and further include a coating including an insulating material covering the P protrusions. The coating is selected from the group consisting of polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer (PFA), alumina, yttrium oxide, and yttrium fluoride.

In other features, the P protrusions are arranged on the radially outer surface of the first annular body at an interval of ^360°/P. The P protrusions extend radially outward from the radially outer surface of the first annular body at a predetermined distance in the range of 50 micrometers to 250 micrometers.

In other features, the first annular body has an "L"-shaped cross-section, and the P protrusions are arranged on the radially outer surface of the first annular body at an interval of ^360°/P. The P protrusions extend from the radially outer surface of the first annular body at a predetermined distance in the range of 50 micrometers to 250 micrometers.

In other features, the coating covering the P protrusions, wherein the coating comprises selected from polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer (PFA), alumina, yttrium oxide, and fluorinated Insulating material of the group consisting of yttrium.

In other features, the first annular body has an "L"-shaped cross-section. The P protrusions extend from the radially outer surface of the first annular body at a predetermined distance in the range of 50 micrometers to 250 micrometers. The first ring-shaped main system is arranged below the second ring-shaped main body and is located in a cavity defined by the second ring-shaped main body. The coating covers the P convex portions. The coating includes an insulating material selected from the group consisting of polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer (PFA), aluminum oxide, yttrium oxide, and yttrium fluoride.

Further application fields of this disclosure will become apparent from the implementation section, the scope of the patents requested, and the drawings. The implementation chapters and specific examples are intended for illustrative purposes only, and are not intended to limit the scope of this disclosure.

In the process of substrate processing, the substrate is placed on a support such as an electrostatic chuck (ESC), the processing gas is supplied, and the plasma is ignited in the processing chamber. The exposed surfaces of the components in the processing chamber are damaged by the plasma.

For example, the edge ring is configured to surround the radial outer edge of the substrate to shape the plasma. After processing the substrate, the exposed surface of the edge ring is damaged by the plasma and is located at different heights relative to the substrate. Therefore, the influence of the edge ring on the plasma changes, which changes the effect of the processing on the substrate. In order to reduce the process variation caused by damage to the edge ring without breaking the vacuum, some processing chambers use an in-chamber actuator to raise the height of the edge ring to compensate for the loss. In many of these systems, the height of the edge ring is automatically adjusted based on the number of cycles and/or total plasma treatment exposure time. Other systems measure the height of the edge ring and adjust its height based on the measured height.

As the height of the edge ring is adjusted, the capacitive coupling between the plasma, sheath, and/or capacitive transport structure (including the edge ring) changes accordingly. These changes in capacitive coupling may cause unevenness in substrate processing over time. Due to the change in the height of the edge ring, the various edge ring configurations according to the present disclosure significantly reduce the change in the capacitance of the transmission structure.

More specifically, the plasma sheath is created between the plasma and the delivery element. In some examples, the RF bias is output to the substrate support. In order to maintain control of the sheath at low RF bias frequencies (for example, below 5 MHz or below 1 MHz) to ensure process uniformity, it is necessary to maintain the capacitance of the conveying element to the substrate support while adjusting the height of the edge ring to compensate for wear. value. The area around the edge ring and/or capacitive coupling structure is designed to minimize changes in capacitive coupling as the top edge ring moves. In some examples, the capacitance is minimized in the area separated as the height of the edge ring increases. In other areas where the height of the edge ring does not change (or changes less) when the height of the edge ring is increased, the capacitance is controlled.

In some examples, the edge ring system is made of conductive material. As used herein, conductive material means a material having a resistance of ^{10 4 Ωcm or less.} For example, doped silicon has a resistance of 0.05 Ωcm, silicon carbide has a resistance of 1-300 Ωcm, and metals such as aluminum and copper have a resistance of ^{≈ 10 -7 Ωcm.}

Referring now to FIG. 1A, an example plasma processing chamber using a movable edge ring is shown. As can be appreciated, other types of plasma processing chambers can be used. The substrate processing system 110 may be used to perform etching using capacitively coupled plasma (CCP). The substrate processing system 110 includes a processing chamber 122 that encloses other components of the substrate processing system 110 and contains RF plasma (if used). The substrate processing system 110 includes an upper electrode 124 and a substrate support 126 such as an electrostatic chuck (ESC). During operation, the substrate 128 is placed on the substrate support 126.

For example only, the upper electrode 124 may include a gas distribution device 129 such as a shower head, which introduces and distributes the processing gas. The gas distribution device 129 may include a rod portion including an end connected to the top surface of the processing chamber. An annular body is generally cylindrical and extends radially outward from the opposite end of the rod portion at a location spaced from the top surface of the processing chamber. The surface or panel of the annular body of the shower head facing the substrate contains a plurality of through holes through which precursors, reactants, etching gases, inert gases, carrier gases, other processing gases or purge gases flow. Alternatively, the upper electrode 124 may include a guide plate, and the processing gas may be introduced in another manner.

The substrate support 126 includes a base 130 as a lower electrode. The base 130 supports a heating plate 132, which may correspond to a ceramic multi-zone heating plate. The adhesive and/or thermal resistance layer 134 can be disposed between the heating plate 132 and the base 130. The base 130 may include one or more channels 136 for the flow of coolant through the base 130.

The RF generation system 140 generates and outputs an RF voltage to one of the upper electrode 124 and the lower electrode (for example, the base 130 of the substrate support 126). The other of the upper electrode 124 and the base 130 may be DC grounded, AC grounded, or floating. For example only, the RF generation system 140 may include an RF generator 142 that generates the RF plasma power that is fed to the upper electrode 124 or the base 130 by the matching and distribution network 144. In other examples, plasma can be generated inductively or remotely.

The gas delivery system 150 includes one or more gas sources 152-1, 152-2, ..., and 152-N (collectively referred to as the gas source 152), where N is an integer greater than zero. The air source 152 is connected to the manifold 160 by valves 154-1, 154-2, ... and 154-N (collectively referred to as valve 154) and MFC 156-1, 156-2, ... and 156-N (collectively referred to as MFC 156) . A secondary valve can be used between MFC 156 and manifold 160. Although a single gas delivery system 150 is shown, two or more gas delivery systems may be used.

The temperature controller 163 may be connected to a plurality of thermal control components (TCE) 164 installed in the heating plate 132. The temperature controller 163 can be used to control the plurality of TCEs 164 to control the temperature of the substrate support 126 and the substrate 128. The temperature controller 163 may communicate with the coolant assembly 166 to control the flow of the coolant through the passage 136. For example, the coolant assembly 166 may include a coolant pump, a storage tank, and/or one or more temperature sensors. The temperature controller 163 operates the coolant assembly 166 to selectively flow the coolant through the passage 136 to cool the substrate support 126.

The valve 170 and the pump 172 can be used to evacuate the reactants from the processing chamber 122. The system controller 180 can be used to control the components of the substrate processing system 110. During the plasma processing, the edge ring 182 may be arranged radially outside the substrate 128. The edge ring height adjustment system 184 (including the system controller 180 and the actuators and lift pins shown in FIG. 5B) can be used to adjust the height of the top surface of the edge ring 182 relative to the base plate 128, as described in further detail below. In some examples, the edge ring 182 can also be lifted, removed, and replaced with another edge ring by the robot end effector without breaking the vacuum.

Referring now to FIGS. 1B and 1C, the substrate processing system may include a top edge ring exposed to the plasma and a lower ring located under the top edge ring and shielded by the direct plasma by the top edge ring. For example, an edge ring system 190 designed to have capacitive coupling is shown in FIG. 1B. The lower part of the top edge ring 192 is located radially outside of the lower part of the lower ring 194.

In order to maintain the control of the plasma sheath at a low bias frequency, when the top edge ring 192 is exposed to plasma, eroded and raised, the value of the coupling capacitance C should remain fixed and relatively constant. In addition, there may be a significant difference in temperature between the top edge ring 192 and the lower ring 194. For example, during the plasma treatment process, the temperature difference between the top edge ring 192 and the lower ring 194 may be in the range of 0⁰C to 200⁰C (for example, 100⁰C). In some examples, as the lower ring 194 expands when heated and contracts when cooled, the lower ring 194 (or the top edge ring 192) may be in a direction parallel to the substrate in a direction toward the side of the top edge ring 192 Move or travel to effectively reduce the gap in certain radial directions and increase the gap in other radial directions.

Assume that C is the capacitance between the top edge ring 192 and the lower ring 194. As the lower ring 194 moves away from the center (closer to the top edge ring 192 in some radial directions and away from the top edge in other radial directions) Ring 192 is further away), because the capacitance is a non-linear function of the gap so the capacitance rises accordingly. More specifically, the capacitance C _offset = S(s')*C _center , where s'= d/(R ₂ -R ₁ ), where 0 < s'< 1 and where R ₂ is the top edge ring 192 The inner diameter and R ₁ is the outer diameter of the lower ring 194. In Figure 1C, the relative increase in capacitance is shown as a function of the offset percentage (%) of the nominal gap. As can be appreciated, when the offset percentage is greater than about 35-40% of the nominal gap, the capacitance is affected.

The system and method according to the present disclosure uses an edge ring having a convex portion on the radially outer surface to restrict the movement of the lower edge ring 194 relative to the top edge ring 192 during heating and cooling during plasma processing. In some examples, the movement is limited by the convex portion to less than or equal to 20%, 30%, or 40% of the nominal gap to limit the influence of the relative movement on the capacitance of the edge ring system.

Referring now to FIGS. 2 and 3, the edge ring 200 for the substrate processing system includes a ring-shaped body 210. The annular body 210 includes a top surface 214, a bottom surface 216, a radially inner surface 230, and a radially outer surface 234. The radially outer surface 234 includes evenly spaced convex portions 220-1, 220-2, ... and 220-P (collectively referred to as convex portions 220), which are radially directed from the radially outer surface 234 of the annular main body 210 Outer extension, where P is an integer in the range of 3 to 8. The protrusion 220 restricts the relative movement of the edge ring 200 with respect to surrounding elements such as the top edge ring (shown above and below).

In some examples, the spacing between the protrusions ^{is determined by 360°} /P. In other examples, P is in the range of 5 or 6. In some examples, P=5 and the interval is 72⁰.

Referring now to FIG. 4, an enlarged view of a part (detail 4 in FIG. 3) of one of the protrusions 220 of the edge ring 200 is shown. The edge ring 200 includes a convex portion 220 formed on the radially outer surface of the edge ring 200. In some examples, the protrusion 220 extends in a vertical direction that is partially or completely along the vertical thickness of the radially outer surface, as shown in FIGS. 2 and 7. The protrusion 220 includes a flat surface 410 extending from the radially outer surface 234 of the edge ring 200 between the top surface 214 and the bottom surface 216. The flat surface 410 tends to be easier to machine and inspect dimensions than the arcuate profile. In other words, in some examples, the edge ring 200 is initially made slightly wider without protrusions 220, and then the radially outer surface 234 is machined to remove the area between adjacent protrusions 220 to form protrusions 220. In other examples, the protrusion 220 includes an arcuate or convex profile in a plan view to reduce the surface area in contact with the radially inner facing surface of the top edge ring, and to adjust the height or replace the top edge without breaking the vacuum. Reduce friction when ringing.

In some examples, the protrusion 220 is coated with the coating material 420. In some examples, the coating material 420 is relatively conformal and made of insulating materials. In some examples, the coating is selected from yttrium fluoride, or yttrium oxide, aluminum oxide, or polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer (PFA) deposited by atomic layer deposition Of the group. The coating material 420 has an insulating function, which prevents short circuits and reduces corrosion. The coating material 420 also ensures a minimum gap between the edge ring 220 and another element such as the upper ring to prevent short circuits. In some examples, the protrusion 220 extends radially outward from the radially outer surface of the edge ring 200 to a distance sufficient to restrict movement (given the number of protrusions used).

As can be understood, the protrusion 220 is generally not provided to completely restrict the relative movement of the upper and lower rings. The gap helps reduce bonding during height adjustment and/or replacement. Therefore, some relative movement is still desired, and unintended movement (which may change the effective coupling capacitance) may still occur in the case of 3 protrusions.

In some examples, the protrusion 220 extends from the radially outer surface of the edge ring in the radially outward direction in a range of 50 micrometers to 250 micrometers. In some examples, each of the protrusions has a span less than or equal to 5⁰, 4⁰, 3⁰, 2⁰, or 1⁰ in the circumferential direction.

Referring now to FIGS. 5A to 6B, the edge ring 200 has an "L" shaped cross-section in some examples. The edge ring 200 includes an annular body 510 having a rectangular cross-section and an annular flange 520 extending radially inward from the lower ring of the annular body 510 to the innermost part 530. In FIG. 5B, the edge ring 200 may be configured adjacent to another conductive structure, such as the top edge ring 550 exposed to plasma. The top edge ring 550 includes an annular body 564 and radially inner legs 560 and/or radially outer legs 570. As the top edge ring 550 is eroded, the system controller 180 drives the actuator 582 to move the edge ring lift pin 580, which adjusts the height of the top edge ring 550 relative to the edge ring 200 (and the top surface of the substrate) . The protrusion 220 maintains the distance between the edge ring 200 and the top edge ring 550, which helps to maintain the capacitance of the edge ring system within a predetermined range when the height of the top edge ring 550 is adjusted.

Referring now to FIG. 7, the radially outer surface 234 of the edge ring 200 is shown. The transition 710 from the top surface 214 of the edge ring 200 to the radially outer surface 234 is circular. The transition 720 from the bottom surface 216 of the edge ring 220 to the radially outer surface 234 is rounded, as shown at 710. Similarly, the transition from the top surface 214 and the bottom surface 216 to the radially inner surface 230 may also be rounded.

The foregoing essence is only used for illustrative description, and is not intended to limit the content disclosed herein, its application or purpose. The extensive teachings of this disclosure can be implemented in many forms. Therefore, although this disclosure contains specific examples, other adjustments will become apparent after studying the drawings, the specification, and the scope of the following patent applications. Therefore, the true scope of this disclosure should not be limited to this. It should be understood that without changing the principle of this disclosure, one or more steps in a method can be executed in a different order (or at the same time). Furthermore, although each embodiment is described above as having specific features, any one or more of those described features related to any embodiment of the present disclosure can be implemented in the features of any other embodiment And/or combined with it, even if the combination is not clearly described. In other words, the described embodiments are not mutually exclusive, and replacement of one or more embodiments with another is still within the scope of the present disclosure.

The spatial and functional relationships between components described in various terms (for example, between modules, circuit elements, semiconductor layers, etc.) include: "connection", "fit", "coupling", "connection", "phase" "Neighbor", "At the top", "Above", "Below", and "Settings". Unless it is explicitly described as "direct", when the relationship between the first and second components is described in the above disclosure, the relationship may be a direct relationship between the first and second components without other intermediary components. It may also be that there is an indirect relationship (spatially or functionally) between the first and second components with one or more intermediate components. As used here, the term at least one of A, B and C should be interpreted as using the non-exclusive "or" to indicate logic (A or B or C), and should not be interpreted as indicating "at least one of A, at least One of B and at least one of C".

In some instances, the controller is part of the system, which may be part of one of the above examples. The system may include semiconductor processing equipment, including processing tools, chambers, platforms, and/or specific processing components (wafer supports, airflow systems, etc.). These systems may integrate electronic products to control the operations before, during, and after semiconductor wafer or substrate processing. This electronic product can be called a "controller", which can control the components or sub-components of various systems. The controller can be programmed to control any of the processes disclosed here, including process gas delivery, temperature setting (such as heating and/or cooling), pressure setting, vacuum setting, power setting, radio frequency (RF) generator setting, RF matching Circuit setting, frequency setting, flow setting, fluid delivery setting, position and operation setting, wafer transfer tool and other transfer tools and/or load lock connected to a specific system or interface with a specific system, depending on the process requirements and/or The type of system.

Broadly speaking, a controller can be defined as an electronic product with various integrated circuits, logic, memory, and/or software that can accept commands, send commands, control operations, enable cleaning operations, enable endpoint measurements, and so on. The integrated circuit may include a chip that stores program instructions in the form of firmware, a digital signal processor (DSP), a chip defined as a special-purpose integrated circuit (ASIC), and/or one or more execution program instructions (such as software) Microprocessor or microcontroller. Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files) to define the operating parameters of a specific process executed on a semiconductor wafer or system. In some embodiments, the operating parameters may be defined by the process engineer in one or more layers of structure, material layer, metal layer, oxide layer, silicon layer, silicon dioxide layer, surface, circuit and/or Part of the recipe used to complete one or more process steps during the die process.

In some embodiments, the controller may be a part of or coupled with a computer integrated with the system, coupled with the system, or networked with the system, or combined with the above methods. For example, the controller may be in the "cloud" or part or all of the factory host computer system, which allows remote access to the wafer process. The computer may allow remote connection to the system to monitor the progress of current manufacturing operations, view historical records of past manufacturing operations, view trends or performance matrices from multiple manufacturing operations, modify current process parameters, set process steps to continue the current process, or Is to start a new process. In some cases, a remote computer (such as a server) can provide process recipes to the system through a network that may include a local area network or the Internet. The remote computer may include a user interface for accessing or programming parameters and/or settings, which are then connected to the system from the remote computer. In some instances, the controller receives instructions in the form of data specifying the parameters of each process step to be executed during one or more operations. It should be understood that the parameters can be specific to the type of process to be executed and the type of tool that the controller is set to interface or control. Therefore, as described above, the controllers may be decentralized, just as by combining one or more individual controllers through the network to cooperate and work towards a common purpose, as in the process and control described here. An example of a distributed controller for this purpose could be one or more integrated circuits connected to one or more remote integrated circuits in a chamber (for example at the platform level or part of a remote computer) The two are combined to control the process of the chamber.

Without limitation, example systems may include plasma etching chambers or modules, deposition chambers or modules, spin washing chambers or modules, metal plating chambers or modules, cleaning chambers or modules, beveled edges Etching chamber or module, physical vapor deposition (PVD) chamber or module, chemical vapor deposition (CVD) chamber or module, atomic layer deposition (ALD) chamber or module, atomic layer etching (ALE ) Chamber or module, ion implantation chamber or module, track chamber or module, and any other semiconductor processing systems that may be associated with or used for semiconductor wafer production and/or manufacturing.

As mentioned above, the controller can contact one or more other tool circuits or modules, other tool components, group tools, other tool interfaces, connection tools, adjacent tools, tools all over the factory, host computer, another controller , Or the tool used in the transfer of the wafer container out or to the tool location and/or load port in the semiconductor manufacturing plant, depending on the process steps performed by the tool.

4: details

5A: Details

110: Substrate processing system

122: processing chamber

124: Upper electrode

126: substrate support

128: substrate

129: Gas distribution device

130: base

132: heating plate

134: Adhesive and/or thermal resistance layer

136: Channel

140: RF generation system

142: RF generator

144: Matching and distribution network

150: Gas delivery system

152-1: Air source

152-2: Air source

152-N: Air source

154-1: Valve

154-2: Valve

154-N: Valve

156-1: MFC

156-2: MFC

156-N:MFC

160: Manifold

163: temperature controller

164: TCE

166: Coolant component

170: Valve

172: Pump

180: system controller

182: Edge Ring

184: Edge ring height adjustment system

190: Edge Ring System

192: Top edge ring

194: lower ring

200: edge ring

210: ring body

214: top surface

216: bottom surface

220: convex

220-1: Convex

220-2: Convex

220-3: Convex

220-4: Convex

220-5: convex

230: radial inner surface

234: radial outer surface

410: Flat surface

420: Coating material

510: Ring body

520: Ring flange

530: The innermost part

550: Top edge ring

560: radial inner leg

564: Ring body

570: radial outer leg

580: Edge ring lift pin

582: Actuator

710: Transition

720: Transition

A more complete understanding of this disclosure will be made from the implementation section and accompanying drawings, in which:

FIG. 1A is a functional block diagram of an example of a substrate processing system according to the present disclosure;

Figure 1B is a plan view of the upper and lower edge rings according to the present disclosure;

FIG. 1C is a graph depicting the increase in capacitance as a function of the offset percentage from the nominal gap according to the present disclosure;

2 is a top perspective view of an example of an edge ring used in a substrate processing system according to the present disclosure, which includes a ring-shaped body and evenly spaced convex portions extending radially outward from the ring-shaped body;

Figure 3 is a bottom view of the edge ring of Figure 2;

Figure 4 is an enlarged view of one of the convex portions of the edge ring (detail 4 in Figure 3);

Figure 5A is a cross-sectional view of the edge ring (detail 5A in Figure 6B);

Figure 5B is a cross-sectional view of an edge ring configured to be adjacent to and below the top edge ring;

6A is a cross-sectional side view of the edge ring taken along 6A-6A in FIG. 3;

Fig. 6B is a cross-sectional side view of the edge ring taken along 6B-6B in Fig. 3; and

Figure 7 is a side view of the edge ring in Figure 6A.

In these drawings, the index number can be reused to indicate similar and/or identical parts.

4: details

200: edge ring

210: ring body

216: bottom surface

220-1: Convex

220-2: Convex

220-3: Convex

220-4: Convex

220-5: convex

230: radial inner surface

234: radial outer surface

Claims (15)

An edge ring for a plasma processing system, comprising: a first ring-shaped body arranged to surround a substrate support during the plasma processing process, wherein a radially outer surface of the first ring-shaped body is arranged To define a predetermined gap when disposed adjacent to a facing side surface of a second ring body of a top edge ring, the top edge ring being exposed to plasma during plasma processing; and P protrusions, The P protrusions extend from the radially outer surface of the first annular body in a direction toward the facing side surface of the second annular body, wherein the P protrusions are arranged in the first annular body P spaced apart positions on the radially outer surface of the main body, and the P protrusions are configured to reduce the change of the predetermined gap during the plasma treatment process, where P is an integer greater than or equal to 3 and less than or equal to 8. The edge ring for a plasma processing system as described in claim 1, wherein the P protrusions are arranged at an interval of 360°/P. The edge ring used in the plasma processing system as described in claim 1 further includes a coating covering the P protrusions. The edge ring for a plasma processing system according to claim 3, wherein the coating includes an insulating material. The edge ring for plasma processing system according to claim 3, wherein the coating is selected from polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer (PFA), alumina, yttrium oxide, and The group consisting of yttrium fluoride. The edge ring for a plasma processing system according to claim 1, wherein the P protrusions are at a predetermined distance in the range of 50 micrometers to 250 micrometers from the radially outer surface of the first annular body To be extended. The edge ring for a plasma processing system according to claim 1, wherein the first ring-shaped body has an "L"-shaped cross section. The edge ring for a plasma processing system according to claim 1, wherein the first ring-shaped main system is disposed below the second ring-shaped main body in a cavity defined by the second ring-shaped main body. The edge ring for a plasma processing system according to claim 1, wherein the P protrusions are arranged at an interval of 360°/P, and further include a coating including covering the P protrusions Part of an insulating material. The edge ring for plasma processing system according to claim 9, wherein the coating is selected from polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer (PFA), alumina, yttrium oxide, and The group consisting of yttrium fluoride. The edge ring for a plasma processing system according to claim 1, wherein: the P protrusions are arranged on the radially outer surface of the first annular body at an interval of 360°/P, and the The P protrusions extend radially outward from the radially outer surface of the first annular body at a predetermined distance in the range of 50 micrometers to 250 micrometers. The edge ring for a plasma processing system according to claim 1, wherein: the first ring-shaped body has an "L"-shaped cross-section, and the P protrusions are arranged at an interval of 360°/P On the radially outer surface of the first ring-shaped body, and the P protrusions extend from the radially outer surface of the first ring-shaped body at a predetermined distance in the range of 50 micrometers to 250 micrometers. The edge ring for a plasma processing system according to claim 12, further comprising a coating covering the P protrusions, wherein the coating comprises selected from polytetrafluoroethylene (PTFE), perfluoroalkoxy An insulating material in the group consisting of polymer (PFA), alumina, yttrium oxide, and yttrium fluoride. The edge ring for a plasma processing system according to claim 1, wherein the first ring-shaped body has an "L"-shaped cross-section, and the P protrusions extend outward from the radial direction of the first ring-shaped body The surface is extended by a predetermined distance in the range of 50 microns to 250 microns, and The first ring-shaped main system is arranged below the second ring-shaped main body, and is located in a cavity defined by the second ring-shaped main body. The edge ring for a plasma processing system according to claim 14, further comprising a coating covering the P protrusions, wherein the coating comprises selected from polytetrafluoroethylene (PTFE), perfluoroalkoxy An insulating material in the group consisting of polymer (PFA), alumina, yttrium oxide, and yttrium fluoride.

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