TWM599984U - Mini light emitting diode (Mini LED) backlight module - Google Patents

Mini light emitting diode (Mini LED) backlight module Download PDF

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TWM599984U
TWM599984U TW109206324U TW109206324U TWM599984U TW M599984 U TWM599984 U TW M599984U TW 109206324 U TW109206324 U TW 109206324U TW 109206324 U TW109206324 U TW 109206324U TW M599984 U TWM599984 U TW M599984U
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Taiwan
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light
sub
emitting diode
millimeter
backlight module
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TW109206324U
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Chinese (zh)
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葉鈞皓
魯浩
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茂林光電科技股份有限公司
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Abstract

本創作提供一種次毫米發光二極體(Mini LED)背光模組,包含一直下式光源及一導光板。直下式光源具有基板及複數間隔排列設置於基板上的次毫米發光二極體。導光板設於直下式光源上方且具有相對設置之一出光面及一入光面,入光面並相對直下式光源形成複數個供光空間,以供容置次毫米發光二極體並接收次毫米發光二極體發出之光線。據此,係可讓次毫米發光二極體之光線於入射至導光板時具有足夠之展光空間,有效避免產生光包等會造成亮暗不均現象之缺失,進而提升導光板之出光效能。 This creation provides a sub-millimeter light emitting diode (Mini LED) backlight module, which includes a direct-down light source and a light guide plate. The direct type light source has a substrate and a plurality of sub-millimeter light emitting diodes arranged on the substrate at intervals. The light guide plate is arranged above the direct-type light source and has a light-emitting surface and a light-incident surface disposed oppositely. The light-incident surface forms a plurality of light supply spaces relative to the direct-type light source for accommodating and receiving sub-millimeter light-emitting diodes. Light emitted by millimeter light-emitting diodes. According to this, the light from the sub-millimeter light-emitting diode can have sufficient light spreading space when it enters the light guide plate, effectively avoiding the lack of uneven brightness and darkness caused by the generation of light packets, thereby improving the light output efficiency of the light guide plate .

Description

次毫米發光二極體(Mini LED)背光模組 Sub-millimeter light emitting diode (Mini LED) backlight module

本創作係與背光模組領域相關,尤其是一種次毫米發光二極體(Mini LED)背光模組。This creation is related to the field of backlight modules, especially a sub-millimeter light emitting diode (Mini LED) backlight module.

背光模組係為供以應用於各類電子顯示裝置中,做為提供光源以利顯示畫面的光學產品,憑藉其可將光源轉化為均勻面狀出光之優異導光效能,著實已為現今顯示裝置不可或缺的組件。The backlight module is intended to be used in various electronic display devices as an optical product that provides a light source to facilitate the display of pictures. With its excellent light guiding performance that can transform the light source into a uniform surface light, it has indeed become a display today. An indispensable component of the device.

應用於背光模組的光源種類,從早期的冷陰極管逐漸演變為使用強度、演色性與調整性更為優異之發光二極體(LED),以提升光線之使用效能。並隨著發光二極體技術的成長,微發光二極體(Micro LED)及次毫米發光二極體(Mini LED)逐漸成為廠商致力開發與使用的產品類別,尤其是次毫米發光二極體,身為介於成熟發光二極體與微發光二極體的中繼產品,有超越成熟發光二極體之色彩飽和度、反應速度以及更小的體積,同時相較於微發光二極體又更易生產製造,因此漸漸成為顯示裝置喜於使用的光源選擇。The types of light sources used in backlight modules have gradually evolved from the early cold cathode tubes to light-emitting diodes (LEDs) with more excellent intensity, color rendering and adjustability to improve the efficiency of light. And with the growth of light-emitting diode technology, micro-light-emitting diodes (Micro LED) and sub-millimeter light-emitting diodes (Mini LED) have gradually become product categories that manufacturers are committed to developing and using, especially sub-millimeter light-emitting diodes. , As a relay product between mature light-emitting diodes and micro-light-emitting diodes, it has color saturation, reaction speed and smaller volume that surpass mature light-emitting diodes, and is compared with micro-light-emitting diodes It is also easier to manufacture, so it has gradually become the light source choice for display devices.

對顯示裝置而言,畫面呈現的色彩、對比皆為產品開發上的重要考量,基於此,如何讓搭配次毫米發光二極體使用之背光模組,能夠提供更為均勻並具備足夠亮度之面光源,即為設計上之重要因素。有鑑於此,本創作人係集結多年從事相關行業之豐富經驗,構思並提出一種次毫米發光二極體背光模組,以提供更為優異之光學產品。For display devices, the color and contrast of the screen are important considerations in product development. Based on this, how to make the backlight module used with sub-millimeter light-emitting diodes provide a more uniform surface with sufficient brightness The light source is an important factor in design. In view of this, the creator has gathered many years of rich experience in related industries and conceived and proposed a sub-millimeter light-emitting diode backlight module to provide more excellent optical products.

本創作之一目的,旨在提供一種次毫米發光二極體背光模組,係可讓次毫米發光二極體之光線入射至導光板時具有足夠之展光空間予以發散,而可避免產生如亮包等問題,使導光板之出光具有更好的均勻度與亮度,著實改善直下式背光模組之供光效能。One purpose of this creation is to provide a sub-millimeter light-emitting diode backlight module, which allows the light of the sub-millimeter light-emitting diode to enter the light guide plate with sufficient light spreading space to diverge, and avoid the occurrence of such Problems such as bright package make the light from the light guide plate have better uniformity and brightness, which can improve the light supply efficiency of the direct-lit backlight module.

為達上述目的,本創作於一實施方式中揭露一種次毫米發光二極體(Mini LED)背光模組,包含:一直下式光源,具有一基板及複數次毫米發光二極體,該等次毫米發光二極體係間隔排列設置於該基板上;及一導光板,設於該直下式光源上方,該導光板具有一出光面及一入光面,該入光面與該出光面相對設置,且該入光面係相對該直下式光源形成複數個供光空間,以供容置該等次毫米發光二極體並接收該等次毫米發光二極體發出之光線。藉此,係可於應用時提供次毫米發光二極體足夠的展光空間,避免導光板出現亮暗不均之出光現象,大幅提升背光模組之出光效能。In order to achieve the above objective, this creation discloses in one embodiment a sub-millimeter light-emitting diode (Mini LED) backlight module, which includes: a straight-down light source with a substrate and multiple millimeter light-emitting diodes. The millimeter light emitting diode system is arranged at intervals on the substrate; and a light guide plate is arranged above the direct light source, the light guide plate has a light exit surface and a light entrance surface, and the light entrance surface and the light exit surface are arranged opposite to each other, And the light incident surface forms a plurality of light supply spaces relative to the direct light source for accommodating the sub-millimeter light-emitting diodes and receiving the light emitted by the sub-millimeter light-emitting diodes. In this way, sufficient light spreading space for sub-millimeter light-emitting diodes can be provided during application, avoiding uneven light output from the light guide plate, and greatly improving the light output efficiency of the backlight module.

於一實施方式中,係揭露該等供光空間係分別由一V型溝槽框圍形成,且當該等次毫米發光二極體之寬度為a,高度為b,該等V型溝槽之斜面夾角為2θ時,該等V型溝槽之深度為

Figure 02_image001
,任二相鄰之該等V型溝槽之間距為a+2b
Figure 02_image003
,據此係以具備較佳之入光調整效能。 In one embodiment, it is disclosed that the light supply spaces are respectively formed by a V-shaped groove frame, and when the width of the sub-millimeter light emitting diode is a and the height is b, the V-shaped grooves When the angle of the inclined plane is 2θ, the depth of the V-shaped grooves is
Figure 02_image001
, The distance between any two adjacent V-shaped grooves is a+2b
Figure 02_image003
According to this, it has better light-incidence adjustment performance.

於次一實施方式中,該等次毫米發光二極體之寬度a為0.11~0.24mm,以具有較好的供光效能。In the next embodiment, the width a of the sub-millimeter light emitting diode is 0.11 to 0.24 mm, so as to have a better light supply efficiency.

於一實施方式中,則揭示該等次毫米發光二極體之高度b為0.1~0.2mm,且該等次毫米發光二極體之高度b可為0.15mm,如此以符合薄型化之結構需求。In one embodiment, it is revealed that the height b of the sub-millimeter light-emitting diodes is 0.1 to 0.2 mm, and the height b of the sub-millimeter light-emitting diodes can be 0.15 mm, so as to meet the requirements of the thin structure .

此外,於再一實施方式中揭露該等次毫米發光二極體之間距為0.2、0.5或0.7mm,以適用於各種需求。In addition, in another embodiment, it is disclosed that the distance between the sub-millimeter light-emitting diodes is 0.2, 0.5, or 0.7 mm, which is suitable for various needs.

另於一實施方式中,任二相鄰之該等V型溝槽之間距與該等次毫米發光二極體之間距相等,而使每一該V型溝槽皆容置有該次毫米發光二極體。In another embodiment, the distance between any two adjacent V-shaped grooves is equal to the distance between the sub-millimeter light-emitting diodes, so that each V-shaped groove accommodates the sub-millimeter light emitting Diode.

再一實施方式中,則揭示該等供光空間係分別由一梯型溝槽框圍形成,且當該等次毫米發光二極體之寬度為a,高度為b時,該等梯型溝槽之底面寬度係至少為1.3a,該等梯型溝槽之深度係至少為1.3b,於此係揭露另種溝槽造型以及其對應之尺規限制,以提供次毫米發光二極體有效之展光空間。In yet another embodiment, it is disclosed that the light supply spaces are respectively formed by a trapezoidal groove frame, and when the width of the sub-millimeter light emitting diode is a and the height is b, the trapezoidal grooves The width of the bottom surface of the groove is at least 1.3a, and the depth of these trapezoidal grooves is at least 1.3b. Here, another groove shape and its corresponding rule limit are disclosed to provide sub-millimeter light emitting diodes. The exhibition light space.

在前述結構狀態下,進一步地,於另一實施方式中係揭露任二相鄰之該等梯型溝槽之間距與該等次毫米發光二極體之間距相等,而使每一該梯型溝槽皆容置有該次毫米發光二極體。Under the aforementioned structure state, further, in another embodiment, it is disclosed that the distance between any two adjacent trapezoidal grooves is equal to the distance between the sub-millimeter light-emitting diodes, so that each trapezoidal The grooves contain the sub-millimeter light-emitting diode.

此外,鑒於光線調整需求,於一實施方式中可使該等梯型溝槽之深度為1.3b~2.5b。In addition, in view of light adjustment requirements, in one embodiment, the depth of the trapezoidal grooves can be 1.3b-2.5b.

於另一實施方式中則揭示,該入光面係具有複數撐高部,該等撐高部係凸出該入光面且間隔排列設置,而使該等供光空間分別由該入光面與該等撐高部所夾設形成,如此係可藉由撐高導光板之方式形成供光空間,使次毫米發光二極體入射至入光面的光線具備足夠之展光空間予以發散。In another embodiment, it is disclosed that the light-incident surface has a plurality of supporting portions, and the supporting portions are arranged to protrude from the light-incident surface and arranged at intervals, so that the light-supplying spaces are separated from the light-incident surface. It is sandwiched and formed with the supporting parts, so that the light-supply space can be formed by supporting the light guide plate so that the light from the sub-millimeter light-emitting diode incident on the light-incident surface has enough light-spreading space to diverge.

進一步地,一實施方式中可使該等次毫米發光二極體之寬度為0.11~0.24mm,以具有較好之供光效能。Furthermore, in one embodiment, the width of the sub-millimeter light-emitting diodes can be 0.11 to 0.24 mm, so as to have better light supply efficiency.

而再一實施方式中,則揭露該等撐高部之凸出長度係為0.1~0.3mm,以使背光模組整體兼具優異展光效果同時又可符合薄型化需求。In yet another embodiment, it is disclosed that the protruding length of the supporting parts is 0.1-0.3 mm, so that the backlight module has an excellent light spreading effect as a whole and can meet the requirements of thinning.

為利於組設,於一實施方式中,該等撐高部相對連接該入光面之側係為一平面,以具備更穩定之組裝狀態。In order to facilitate the assembly, in one embodiment, the side of the supporting portions connected to the light incident surface is a flat surface to provide a more stable assembly state.

此外,一實施方式中則揭露該等撐高部之間距為0.7~0.9mm,以提供該等次毫米發光二極體足夠的設置與展光空間。In addition, in one embodiment, it is disclosed that the distance between the supporting parts is 0.7-0.9 mm, so as to provide enough space for the arrangement and light spreading of the sub-millimeter light-emitting diodes.

此外,為提升光線之散射霧化效果,於一實施方式中可使該入光面對應該供光空間之區域設有複數光學微結構。In addition, in order to improve the scattering and fogging effect of light, in one embodiment, the light incident surface can be provided with a plurality of optical microstructures in the area where the light supply space should be provided.

綜上所述,本創作之次毫米發光二極體背光模組係可有效提升使用次毫米發光二極體作為供光源之背光模組,出光時之均勻度等各項表現,以提供更符合市場需求之優異光學產品,在提升出光效能同時亦可兼顧現今市場所需的輕薄化需求。具體的結構實施狀態,可如前各實施方式所述例如使導光板具有凹陷溝槽或使導光板具有凸出結構,而形成可供以容置次毫米發光二極體之供光空間,讓次毫米發光二極體之光線得以順利進入導光板,並因應供光空間而可讓光線得以霧化、散射,使光線自出光面出光時具備足夠的出光均勻度。In summary, the sub-millimeter light-emitting diode backlight module of this creation can effectively improve the use of sub-millimeter light-emitting diodes as the backlight module for the light source, and the uniformity of light output, etc., to provide more consistent performance The excellent optical products demanded by the market can not only improve the light output efficiency, but also meet the light and thin requirements of the current market. The specific structure implementation state can be as described in the previous embodiments, for example, the light guide plate has a recessed groove or the light guide plate has a protruding structure to form a light supply space for accommodating sub-millimeter light emitting diodes. The light from the sub-millimeter light-emitting diode can smoothly enter the light guide plate, and the light can be atomized and scattered in response to the light supply space, so that the light has sufficient light uniformity when it comes out of the light emitting surface.

誠如前述,次毫米發光二極體為顯示裝置領域中新興的光源選擇,但基於發光二極體之特性限制,次毫米發光二極體於使用上仍存有射出光線過於集中,而使出光易產生亮暗不均之問題。對此,供以搭配次微米發光二極體使用之導光板,須具備可改善前述過於準直出光狀態之對應設計,以讓次毫米發光二極體於出光時具有足夠的展光空間,使得入射至導光板的光線得以發散,而形成較為均勻之入光狀態,如此在後續的導光、出光上即能具備更好的呈現效果。As mentioned above, sub-millimeter light-emitting diodes are an emerging light source choice in the field of display devices. However, due to the limitation of the characteristics of light-emitting diodes, sub-millimeter light-emitting diodes still have excessive concentration of emitted light in use, which causes the light to be emitted. Prone to uneven brightness and darkness. In this regard, the light guide plate used with sub-micron light-emitting diodes must have a corresponding design that can improve the aforementioned over-collimated light output state, so that the sub-millimeter light-emitting diode has enough light spreading space when emitting light, so that The light incident on the light guide plate can be diverged to form a more uniform light incident state, so that the subsequent light guide and light exit can have a better presentation effect.

以下係以圖式搭配文字說明以描述本創作之技術特徵,其中各圖所繪結構呈現係僅為示意之用,以利於說明本創作之技術,非表示實際結構尺規、大小等要件,合先敘明。請參閱第1、2及3圖,其係為本創作第一實施方式之立體分解示意圖、組裝示意圖及另一實施狀態之組裝示意圖。本創作揭露一種次毫米發光二極體(Mini LED)背光模組1,係可供搭配電視面板等顯示裝置應用,以提供顯示面板均勻之面狀光線。次毫米發光二極體背光模組1包含一直下式光源10及一導光板11,直下式光源10具有一基板101及複數次毫米發光二極體102,且次毫米發光二極體102間隔排列設置於基板101上,例如為矩陣狀排列。導光板11設於直下式光源10上方,並導光板11具有一出光面111及一入光面112,入光面112與出光面111為相對設置,以接收並導引直下式光源10射出的光線,使光線由出光面111均勻出光,而導光板之出光面111係可佈設有複數取光微結構(圖中未示),以利光線出光,同時亦可更為霧化出光之光線。以第1圖而言,導光板11底側為入光面112,頂側為出光面111,而直下式光源10即對應入光面112設置於導光板11底側位置。導光板11之入光面112相對直下式光源10形成複數個供光空間12,以供容置次毫米發光二極體102並接收次毫米發光二極體102發光之光線。據此,由次微米發光二極體102射出至導光板11的光線,即可因應供光空間12而具有較好的光線發散效果,從而讓導光板11出光面111射出的光線具有更均勻的出光效果。The following diagrams and text descriptions are used to describe the technical characteristics of this creation. The structure of each drawing is for illustration purposes only to facilitate the description of the technology of this creation. It does not indicate the actual structure, size, and other requirements. Explain first. Please refer to Figures 1, 2 and 3, which are the three-dimensional exploded schematic view, the assembly schematic diagram and the assembly schematic diagram of another implementation state of the first embodiment of the creation. This creation discloses a sub-millimeter light-emitting diode (Mini LED) backlight module 1, which can be used with display devices such as TV panels to provide uniform surface light on the display panel. The sub-millimeter light-emitting diode backlight module 1 includes a direct-type light source 10 and a light guide plate 11. The direct-type light source 10 has a substrate 101 and a plurality of sub-millimeter light-emitting diodes 102, and the sub-millimeter light-emitting diodes 102 are arranged at intervals It is arranged on the substrate 101, for example, in a matrix arrangement. The light guide plate 11 is arranged above the direct light source 10, and the light guide plate 11 has a light exit surface 111 and a light entrance surface 112. The light entrance surface 112 and the light exit surface 111 are arranged opposite to each other to receive and guide the light emitted by the direct light source 10 The light makes the light uniformly emitted from the light-emitting surface 111, and the light-emitting surface 111 of the light guide plate can be provided with a plurality of light extraction microstructures (not shown in the figure) to facilitate the light emission, and at the same time, it can be more atomized. As shown in Figure 1, the bottom side of the light guide plate 11 is the light incident surface 112, and the top side is the light exit surface 111, and the direct light source 10 is corresponding to the light incident surface 112 at the bottom side of the light guide plate 11. The light incident surface 112 of the light guide plate 11 forms a plurality of light supply spaces 12 relative to the direct light source 10 for accommodating the sub-millimeter light-emitting diode 102 and receiving the light emitted by the sub-millimeter light-emitting diode 102. Accordingly, the light emitted from the sub-micron light-emitting diode 102 to the light guide plate 11 can have a better light divergence effect in response to the light supply space 12, so that the light emitted from the light emitting surface 111 of the light guide plate 11 has a more uniform Light effect.

於本實施方式中係如第1、2圖所示,該些供光空間12係分別由一V型溝槽13框圍形成,且當次毫米發光二極體102之寬度為a,高度為b,V型溝槽13之斜面夾角A為2θ時,V型溝槽13之深度c為

Figure 02_image001
,任二相鄰之V型溝槽13之間距d為a+2b
Figure 02_image003
。該些V型溝槽13結構係可依據次毫米發光二極體102之尺規結構予以定義,以框圍形成適於次毫米發光二極體102展光之供光空間12,讓自次毫米發光二極體102射出的光線能夠因應供光空間12發散而解決後續出光產生如光包等亮暗不均之問題。其中,各V型溝槽13係分別為長條狀之凹陷槽體,並可使各V型溝槽13之表面為粗糙面,以讓光線更易於散射霧化。 In this embodiment, as shown in Figures 1 and 2, the light supply spaces 12 are respectively framed by a V-shaped groove 13, and the width of the sub-millimeter light emitting diode 102 is a and the height is b. When the slope angle A of the V-shaped groove 13 is 2θ, the depth c of the V-shaped groove 13 is
Figure 02_image001
, The distance d between any two adjacent V-shaped grooves 13 is a+2b
Figure 02_image003
. The structure of the V-shaped grooves 13 can be defined according to the ruler structure of the sub-millimeter light-emitting diode 102, and the light-supply space 12 suitable for light spreading of the sub-millimeter light-emitting diode 102 is formed by the frame, so that the The light emitted by the light emitting diode 102 can diverge in response to the light supply space 12 to solve the problem of uneven brightness and darkness caused by subsequent light output such as light packets. Wherein, each V-shaped groove 13 is a long strip of concave groove body, and the surface of each V-shaped groove 13 can be made a rough surface, so that the light is more easily scattered and atomized.

實際應用上,次毫米發光二極體102之寬度a可為0.11~0.24mm,以具有足夠緊密的供光效能,而次毫米發光二極體102之高度b可為0.1~0.2mm,以讓組構後之背光模組整體厚度具備輕薄化優點。而位於導光板11入光面112之供光空間12,係可依據前述尺規予以設置,使背光模組具有較好的適用性以及整體厚度狀態。於一實施狀態下,次毫米發光二極體102之高度b可為0.15mm。而另一個實施狀態下,次毫米發光二極體102之間距P 1為0.2、0.5或0.7mm,以因應顯示器需求提供排列較為緊密或是鬆散之直下式光源結構。 In practical applications, the width a of the sub-millimeter light-emitting diode 102 can be 0.11 ~ 0.24 mm to have a sufficiently compact light supply efficiency, and the height b of the sub-millimeter light-emitting diode 102 can be 0.1 ~ 0.2 mm to allow The overall thickness of the assembled backlight module has the advantages of lightness and thinness. The light supply space 12 on the light incident surface 112 of the light guide plate 11 can be set according to the aforementioned ruler, so that the backlight module has better applicability and overall thickness. In an implementation state, the height b of the sub-millimeter light emitting diode 102 can be 0.15 mm. In another implementation state, the distance P 1 between the sub-millimeter light-emitting diodes 102 is 0.2, 0.5, or 0.7 mm to provide a densely arranged or loose direct light source structure according to the needs of the display.

次毫米發光二極體背光模組1之具體實施結構上,可使導光板11入光面112相對直下式光源10形成之供光空間12,呈現皆容置有次毫米發光二極體102之設置狀態,亦即使任二相鄰之V型溝槽13之間距d,與次毫米發光二極體102之間距P 1相等,如此設計以讓每一V型溝槽13所框圍形成之供光空間12皆具有次毫米發光二極體102。當然亦可如第3圖所示,使任二相鄰之V型溝槽13之間距d與次毫米發光二極體102之間距P 1具有一定比例關係,進而讓導光板11配合間距較大之次毫米發光二極體102予以組裝時,其供光空間12亦能與直下式光源10相容,呈現導光板11間隔容置有次毫米發光二極體102之狀態,如此也可達到提供次毫米發光二極體102足夠展光空間之功效。 According to the specific implementation structure of the sub-millimeter light-emitting diode backlight module 1, the light-supply space 12 formed by the light-incident surface 112 of the light guide plate 11 relative to the direct-type light source 10 appears as a sub-millimeter light-emitting diode 102 In the setting state, even if the distance d between any two adjacent V-shaped grooves 13 is equal to the distance P 1 between the sub-millimeter light-emitting diodes 102, the design is such that each V-shaped groove 13 is surrounded by The light spaces 12 all have sub-millimeter light-emitting diodes 102. Of course, as shown in Figure 3, the distance d between any two adjacent V-shaped grooves 13 and the distance P 1 between the sub-millimeter light-emitting diodes 102 can have a certain proportional relationship, so that the matching distance of the light guide plate 11 is larger. Secondly, when the millimeter light-emitting diode 102 is assembled, the light supply space 12 can also be compatible with the direct-type light source 10, showing a state where the light guide plate 11 houses the sub-millimeter light-emitting diode 102 at intervals, so that it can also provide The sub-millimeter light-emitting diode 102 is enough to spread the light space.

請續以參閱第4圖,其係為本創作第二實施方式之組裝示意圖,並請一併搭配參閱第1圖。次毫米發光二極體背光模組1之另一個實施方式為使該些供光空間12分別由一梯形溝槽14框圍形成,且次毫米發光二極體102之寬度為a,高度為b時,梯形溝槽14之底面寬度e係至少為1.3a,梯形溝槽14之深度f係至少為1.3b。在本實施方式中,直下式光源10之次毫米發光二極體102同樣呈矩陣狀排列於基板101上,可參照第1圖所示,而梯形溝槽14亦同樣可為長條狀之凹陷槽體結構。基於製程考量與實際應用需求,亦可將供光空間12設計為梯形,同樣可達讓次毫米發光二極體102相對導光板11入光面112之入射光線得以發散之功效。而為使光線可確實地因應梯形溝槽14結構而改變入射角度,梯形溝槽14之底面e寬度需至少為1.3a,深度f至少為1.3b,以提供足夠的空間來調整次毫米發光二極體102之入射光線狀態。Please continue to refer to Figure 4, which is the assembly diagram of the second embodiment of this creation, and please refer to Figure 1 together. Another embodiment of the sub-millimeter light-emitting diode backlight module 1 is that the light supply spaces 12 are respectively formed by a trapezoidal groove 14, and the sub-millimeter light-emitting diode 102 has a width a and a height b At this time, the bottom width e of the trapezoidal groove 14 is at least 1.3a, and the depth f of the trapezoidal groove 14 is at least 1.3b. In this embodiment, the sub-millimeter light-emitting diodes 102 of the direct-lit light source 10 are also arranged in a matrix on the substrate 101, as shown in Figure 1, and the trapezoidal grooves 14 can also be elongated depressions. Tank structure. Based on process considerations and actual application requirements, the light supply space 12 can also be designed as a trapezoid, which can also achieve the effect of diverging the incident light from the sub-millimeter light emitting diode 102 relative to the light incident surface 112 of the light guide plate 11. In order for the light to be able to change the incident angle according to the structure of the trapezoidal groove 14, the width e of the bottom surface of the trapezoid groove 14 must be at least 1.3a and the depth f must be at least 1.3b to provide enough space to adjust the sub-millimeter light emission. The incident light state of the polar body 102.

而於實際應用上,一個實施狀態為梯型溝槽14之深度f為1.3b~2.5b,以使導光板11能夠確實地讓次毫米發光二極體102之光線可調整發散。參考前述之實施方式,一個應用狀態下,次毫米發光二極體102寬度b可例如為0.12mm或0.22mm等。In practical applications, an implementation state is that the depth f of the trapezoidal groove 14 is 1.3b˜2.5b, so that the light guide plate 11 can reliably adjust and diverge the light of the sub-millimeter light emitting diode 102. With reference to the foregoing embodiment, in an application state, the width b of the sub-millimeter light-emitting diode 102 may be, for example, 0.12 mm or 0.22 mm.

同樣地,於本實施方式中亦可使任二相鄰之梯型溝槽14之間距P 2與次毫米發光二極體102之間距P 1相等,而使每一梯型溝槽14皆容置有次毫米發光二極體102,如第4圖所示。當然,也可讓相鄰之梯型溝槽14之間距P 2與次毫米發光二極體102之間距形成一定比例關係,而讓次毫米發光二極體背光模組1呈現部分之供光空間12內具有次毫米發光二極體102之組裝狀態,可參考第3圖之次毫米發光二極體102設置示意。 Likewise, in the present embodiment can make the pitch of any two adjacent grooves 14 of the ladder with time P 2 mm light-emitting diode 102 of the pitch is equal to P 1, the grooves 14 are each ladder receiving A sub-millimeter light-emitting diode 102 is placed, as shown in Figure 4. Of course, it is also possible to make the distance P 2 between adjacent ladder grooves 14 and the distance between the sub-millimeter light-emitting diodes 102 form a certain proportional relationship, and let the sub-millimeter light-emitting diode backlight module 1 present part of the light supply space The assembly state of the sub-millimeter light-emitting diode 102 in 12 can refer to the arrangement of the sub-millimeter light-emitting diode 102 in FIG. 3.

請續參閱第5及6圖,其係為本創作第三實施方式之立體分解示意圖及組裝示意圖。次毫米發光二極體背光模組1之另種實施方式為使入光面112係具有複數撐高部15,撐高部15凸出於入光面112且間隔排列設置,而使供光空間12分別由入光面112與撐高部15所夾設形成,如此即可以抬高導光板11之方式,讓次毫米發光二極體102與入光面112具有足夠距離,而可讓光線進入導光板11時更為發散,避免受到次毫米發光二極體102之出光展角限制而形成如亮包之不均出光現象。撐高部15可例如像是V型或梯型之凸出結構,並可為平行於導光板11一側邊之長條狀結構,或是為設置於入光面112之塊狀結構。透過撐高部15結構,當導光板11與直下式光源10相互組裝後,係可讓入光面112與次毫米發光二極體102之間具有供光空間12,以達散光之功效。Please continue to refer to Figures 5 and 6, which are the three-dimensional exploded schematic diagram and assembly schematic diagram of the third embodiment of this creation. Another embodiment of the sub-millimeter light-emitting diode backlight module 1 is that the light incident surface 112 has a plurality of supporting portions 15 which protrude from the light incident surface 112 and are arranged at intervals, so that the light supply space 12 is formed by sandwiching the light-incident surface 112 and the supporting part 15 respectively. In this way, the light guide plate 11 can be raised so that the sub-millimeter light-emitting diode 102 and the light-incident surface 112 have a sufficient distance to allow light to enter The light guide plate 11 is more divergent, so as to avoid being limited by the light-emitting angle of the sub-millimeter light-emitting diode 102 to form an uneven light-emitting phenomenon such as bright packets. The supporting portion 15 may be, for example, a V-shaped or ladder-shaped protruding structure, and may be a long strip structure parallel to one side of the light guide plate 11, or a block structure provided on the light incident surface 112. Through the structure of the supporting part 15, when the light guide plate 11 and the direct light source 10 are assembled with each other, a light supply space 12 can be formed between the light incident surface 112 and the sub-millimeter light emitting diode 102 to achieve the effect of astigmatism.

同樣地,於本實施方式中,次毫米發光二極體102的寬度a亦可為0.11~0.24mm。而考量背光模組之整體厚度表現,以及光學調整之因素,撐高部15的凸出長度g為0.1~0.3mm,例如可為0.2mm,如此以兼具厚度與入光調整需求。進一步地,實際應用上,係可使供光空間12中同時設有多排次毫米發光二極體102,如第6圖所示。並且,於入光面112對應供光空間12之區域可設有複數光學微結構1121,以利使次毫米發光二極體102入射的光線被打散,達到霧化均勻之入射光調整功效。其中,該些光學微結構1121可為凹、凸的網點結構,並視搭配之次毫米發光二極體102規格予以設計其分佈密度與網點尺規。Similarly, in this embodiment, the width a of the sub-millimeter light emitting diode 102 may also be 0.11 to 0.24 mm. Considering the overall thickness performance of the backlight module and the factors of optical adjustment, the protruding length g of the supporting portion 15 is 0.1-0.3 mm, for example, it can be 0.2 mm, so that both the thickness and the light-incidence adjustment requirements are met. Furthermore, in practical applications, multiple rows of sub-millimeter light-emitting diodes 102 can be provided in the light supply space 12 at the same time, as shown in FIG. 6. In addition, a plurality of optical microstructures 1121 may be provided in the area corresponding to the light supply space 12 on the light incident surface 112 to facilitate the dispersion of the incident light from the sub-millimeter light emitting diode 102 to achieve a uniformly atomized incident light adjustment effect. Among them, the optical microstructures 1121 can be concave and convex dot structures, and their distribution density and dot ruler are designed according to the specifications of the sub-millimeter light emitting diode 102.

請續以參閱第7圖,其係為本創作第三實施方式另一實施狀態之組裝示意圖。如前述,供光空間12中係可同時容納多排的次毫米發光二極體102,亦可如第7圖所示,藉由調整撐高部15之間距P 3使由撐高部15與入光面112夾設形成之每一供光空間12皆容置有一排次毫米發光二極體102之狀態。另外於本實施狀態中,撐高部15之間距P 3可為0.7~0.9mm,例如為0.8mm,以使次毫米發光二極體102具有足夠的光線發散空間。而為利於導光板11與直下式光源10之組配,係可使撐高部15相對連接該入光面112之側係為一平面,而使撐高部15為梯形的結構,如此於組裝時係可藉由前述平面與基板101接觸,而使背光模組整體結構更為穩固。 Please continue to refer to Figure 7, which is an assembly diagram of another implementation state of the third embodiment of this creation. As mentioned above, the light supply space 12 can accommodate multiple rows of sub-millimeter light-emitting diodes 102 at the same time. It is also possible to adjust the distance P 3 between the supporting parts 15 so that the supporting parts 15 and Each light supply space 12 formed by sandwiching the light incident surface 112 accommodates a row of sub-millimeter light emitting diodes 102. In addition, in the present embodiment, the distance P 3 between the elevated portions 15 may be 0.7-0.9 mm, for example 0.8 mm, so that the sub-millimeter light emitting diode 102 has enough light divergence space. In order to facilitate the assembly of the light guide plate 11 and the direct light source 10, the side of the supporting portion 15 opposite to the light incident surface 112 can be formed as a plane, and the supporting portion 15 can be a trapezoidal structure. When the aforementioned plane is in contact with the substrate 101, the overall structure of the backlight module can be made more stable.

綜上所述,本創作之次毫米發光二極體背光模組,係屬於直下式背光領域,並有效改善次毫米發光二極體受限於展光角度而易產生之亮包問題,對於設置在導光板底側之直下式光線來源,設計與提出對應之導光板結構,使最終由導光板出光面所射出之光線更加均勻,以提供應用於顯示器領域中,更為優異之背光產品。次毫米發光二極體背光模組係利用供光空間的設置,讓次毫米發光二極體的光線具備足夠的展光空間,以避免光線過於準直集中而導致亮暗不均的出光缺失。具體實施上,係如前各實施方式所述,透過導光板入光面之結構與具次毫米發光二極體之直下式光源的配合,讓次毫米發光二極體藉由供光空間而與入光面具有足夠的展光距離,讓入射光得以霧化發散,讓後續的出光更為均勻,搭配應用之顯示器畫面品質亦可隨之提升。To sum up, the sub-millimeter light-emitting diode backlight module of this creation belongs to the field of direct backlighting, and it effectively improves the problem of the bright package that the sub-millimeter light-emitting diode is limited by the spread angle. For the direct light source on the bottom side of the light guide plate, the corresponding light guide plate structure is designed and proposed to make the light emitted from the light emitting surface of the light guide plate more uniform, so as to provide more excellent backlight products used in the display field. The sub-millimeter light-emitting diode backlight module utilizes the setting of the light supply space, so that the light of the sub-millimeter light-emitting diode has enough light spreading space, so as to avoid the light from being too collimated and concentrated and causing the lack of uneven brightness and darkness. In specific implementation, as described in the previous embodiments, the structure of the light-incident surface of the light guide plate and the direct-lit light source with sub-millimeter light-emitting diodes are combined, so that the sub-millimeter light-emitting diodes can interact with each other through the light supply space. The light-incident surface has a sufficient light spreading distance, so that the incident light can be atomized and diffused, so that the subsequent light output is more uniform, and the picture quality of the display with the application can be improved.

1:次毫米發光二極體背光模組 10:直下式光源 101:基板 102:次毫米發光二極體 11:導光板 111:出光面 112:入光面 1121:光學微結構 12:供光空間 13:V型溝槽 14:梯型溝槽 15:撐高部 A:V型溝槽之斜面夾角 a:次毫米發光二極體之寬度 b:次毫米發光二極體之高度 c:V型溝槽之深度 d:V型溝槽之間距 e:梯形溝槽之底面寬度 f:梯形溝槽之深度 g:撐高部之凸出長度 P:1次毫米發光二極體之間距 P:2梯型溝槽之間距 P:3撐高部之間距 1: Sub-millimeter light-emitting diode backlight module 10: Direct light source 101: Substrate 102: Sub-millimeter light-emitting diode 11: Light guide plate 111: Light exit surface 112: Light entrance surface 1121: Optical microstructure 12: Light supply space 13: V-shaped groove 14: Ladder-shaped groove 15: Supporting part A: The angle of the slope of the V-shaped groove a: The width of the sub-millimeter light-emitting diode b: The height of the sub-millimeter light-emitting diode c: V-shaped The depth of the groove d: the distance between the V-shaped grooves e: the width of the bottom of the trapezoidal groove f: the depth of the trapezoidal groove g: the protruding length of the supporting part P: 1 mm distance between the light-emitting diodes P: 2 Distance between trapezoidal grooves P: Distance between 3 support heights

第1圖,為本創作第一實施方式之立體分解示意圖。 第2圖,為本創作第一實施方式之局部組裝示意圖。 第3圖,為本創作第一實施方式另一實施狀態之局部組裝示意圖。 第4圖,為本創作第二實施方式之局部組裝示意圖。 第5圖,為本創作第三實施方式之立體分解示意圖。 第6圖,為本創作第三實施方式之局部組裝示意圖。 第7圖,為本創作第三實施方式另一實施狀態之局部組裝示意圖。 Figure 1 is a three-dimensional exploded schematic diagram of the first embodiment of the creation. Figure 2 is a partial assembly diagram of the first embodiment of the creation. Figure 3 is a partial assembly diagram of another implementation state of the first embodiment of the creation. Figure 4 is a partial assembly diagram of the second embodiment of the creation. Figure 5 is a three-dimensional exploded schematic diagram of the third embodiment of the creation. Figure 6 is a partial assembly diagram of the third embodiment of the creation. Figure 7 is a partial assembly diagram of another implementation state of the third embodiment of the creation.

1:次毫米發光二極體背光模組 1: Sub-millimeter light emitting diode backlight module

10:直下式光源 10: Direct light source

101:基板 101: substrate

102:次毫米發光二極體 102: Sub-millimeter LED

11:導光板 11: Light guide plate

111:出光面 111: Glossy Surface

112:入光面 112: Glossy surface

12:供光空間 12: Light supply space

13:V型溝槽 13: V-shaped groove

Claims (40)

一種次毫米發光二極體(Mini LED)背光模組,包含: 一直下式光源,具有一基板及複數次毫米發光二極體,該等次毫米發光二極體係間隔排列設置於該基板上;及 一導光板,設於該直下式光源上方,該導光板具有一出光面及一入光面,該入光面與該出光面相對設置,且該入光面係相對該直下式光源形成複數個供光空間,以供容置該等次毫米發光二極體並接收該等次毫米發光二極體發出之光線。 A sub-millimeter light emitting diode (Mini LED) backlight module, including: The straight-down light source has a substrate and a plurality of sub-millimeter light-emitting diodes, and the sub-millimeter light-emitting diode systems are arranged on the substrate in intervals; and A light guide plate is arranged above the direct-type light source, the light guide plate has a light-emitting surface and a light-incident surface, the light-incident surface is disposed opposite to the light-emitting surface, and the light-incident surface forms a plurality of light sources relative to the direct light source The light-supplying space is for accommodating the sub-millimeter light-emitting diodes and receiving the light emitted by the sub-millimeter light-emitting diodes. 如請求項1之次毫米發光二極體背光模組,其中,該等供光空間係分別由一V型溝槽框圍形成,且當該等次毫米發光二極體之寬度為a,高度為b,該等V型溝槽之斜面夾角為2θ時,該等V型溝槽之深度為
Figure 03_image001
,任二相鄰之該等V型溝槽之間距為a+2b
Figure 03_image003
For example, the sub-millimeter light-emitting diode backlight module of claim 1, wherein the light supply spaces are respectively formed by a V-shaped groove frame, and when the width of the sub-millimeter light-emitting diode is a, the height Is b. When the angle between the inclined surfaces of the V-shaped grooves is 2θ, the depth of the V-shaped grooves is
Figure 03_image001
, The distance between any two adjacent V-shaped grooves is a+2b
Figure 03_image003
.
如請求項2之次毫米發光二極體背光模組,其中,該等次毫米發光二極體之寬度a為0.11~0.24mm。For example, the sub-millimeter light-emitting diode backlight module of claim 2, wherein the width a of the sub-millimeter light-emitting diode is 0.11 to 0.24 mm. 如請求項3之次毫米發光二極體背光模組,其中,該等次毫米發光二極體之高度b為0.1~0.2mm。For example, the sub-millimeter light-emitting diode backlight module of claim 3, wherein the height b of the sub-millimeter light-emitting diode is 0.1 to 0.2 mm. 如請求項4之次毫米發光二極體背光模組,其中,該等次毫米發光二極體之高度b為0.15mm。For example, the sub-millimeter light-emitting diode backlight module of claim 4, wherein the height b of the sub-millimeter light-emitting diode is 0.15 mm. 如請求項5之次毫米發光二極體背光模組,其中,該等次毫米發光二極體之間距為0.2、0.5或0.7mm。For example, the sub-millimeter light-emitting diode backlight module of claim 5, wherein the distance between the sub-millimeter light-emitting diodes is 0.2, 0.5 or 0.7 mm. 如請求項6之次毫米發光二極體背光模組,其中,任二相鄰之該等V型溝槽之間距與該等次毫米發光二極體之間距相等,而使每一該V型溝槽皆容置有該次毫米發光二極體。For example, the sub-millimeter light-emitting diode backlight module of claim 6, wherein the distance between any two adjacent V-shaped grooves is equal to the distance between the sub-millimeter light-emitting diodes, so that each V-shaped The grooves contain the sub-millimeter light-emitting diode. 如請求項2之次毫米發光二極體背光模組,其中,該等次毫米發光二極體之高度b為0.1~0.2mm。For example, the sub-millimeter light-emitting diode backlight module of claim 2, wherein the height b of the sub-millimeter light-emitting diode is 0.1 to 0.2 mm. 如請求項8之次毫米發光二極體背光模組,其中,該等次毫米發光二極體之高度b為0.15mm。For example, the sub-millimeter light-emitting diode backlight module of claim 8, wherein the height b of the sub-millimeter light-emitting diode is 0.15 mm. 如請求項2之次毫米發光二極體背光模組,其中,該等次毫米發光二極體之間距為0.2、0.5或0.7mm。For example, the sub-millimeter light-emitting diode backlight module of claim 2, wherein the distance between the sub-millimeter light-emitting diodes is 0.2, 0.5 or 0.7 mm. 如請求項3之次毫米發光二極體背光模組,其中,該等次毫米發光二極體之間距為0.2、0.5或0.7mm。For example, the sub-millimeter light-emitting diode backlight module of claim 3, wherein the distance between the sub-millimeter light-emitting diodes is 0.2, 0.5 or 0.7 mm. 如請求項4之次毫米發光二極體背光模組,其中,該等次毫米發光二極體之間距為0.2、0.5或0.7mm。For example, the sub-millimeter light-emitting diode backlight module of claim 4, wherein the distance between the sub-millimeter light-emitting diodes is 0.2, 0.5 or 0.7 mm. 如請求項8之次毫米發光二極體背光模組,其中,該等次毫米發光二極體之間距為0.2、0.5或0.7mm。For example, the sub-millimeter light-emitting diode backlight module of claim 8, wherein the distance between the sub-millimeter light-emitting diodes is 0.2, 0.5 or 0.7 mm. 如請求項9之次毫米發光二極體背光模組,其中,該等次毫米發光二極體之間距為0.2、0.5或0.7mm。For example, the sub-millimeter light-emitting diode backlight module of claim 9, wherein the distance between the sub-millimeter light-emitting diodes is 0.2, 0.5 or 0.7 mm. 如請求項2之次毫米發光二極體背光模組,其中,任二相鄰之該等V型溝槽之間距與該等次毫米發光二極體之間距相等,而使每一該V型溝槽皆容置有該次毫米發光二極體。For example, the sub-millimeter light-emitting diode backlight module of claim 2, wherein the distance between any two adjacent V-shaped grooves is equal to the distance between the sub-millimeter light-emitting diodes, so that each V-shaped The grooves contain the sub-millimeter light-emitting diode. 如請求項3之次毫米發光二極體背光模組,其中,任二相鄰之該等V型溝槽之間距與該等次毫米發光二極體之間距相等,而使每一該V型溝槽皆容置有該次毫米發光二極體。For example, the sub-millimeter light-emitting diode backlight module of claim 3, wherein the distance between any two adjacent V-shaped grooves is equal to the distance between the sub-millimeter light-emitting diodes, so that each V-shaped The grooves contain the sub-millimeter light-emitting diode. 如請求項4之次毫米發光二極體背光模組,其中,任二相鄰之該等V型溝槽之間距與該等次毫米發光二極體之間距相等,而使每一該V型溝槽皆容置有該次毫米發光二極體。For example, the sub-millimeter light-emitting diode backlight module of claim 4, wherein the distance between any two adjacent V-shaped grooves is equal to the distance between the sub-millimeter light-emitting diodes, so that each V-shaped The grooves contain the sub-millimeter light-emitting diode. 如請求項5之次毫米發光二極體背光模組,其中,任二相鄰之該等V型溝槽之間距與該等次毫米發光二極體之間距相等,而使每一該V型溝槽皆容置有該次毫米發光二極體。For example, the sub-millimeter light-emitting diode backlight module of claim 5, wherein the distance between any two adjacent V-shaped grooves is equal to the distance between the sub-millimeter light-emitting diodes, so that each V-shaped The grooves contain the sub-millimeter light-emitting diode. 如請求項8之次毫米發光二極體背光模組,其中,任二相鄰之該等V型溝槽之間距與該等次毫米發光二極體之間距相等,而使每一該V型溝槽皆容置有該次毫米發光二極體。For example, the sub-millimeter light-emitting diode backlight module of claim 8, wherein the distance between any two adjacent V-shaped grooves is equal to the distance between the sub-millimeter light-emitting diodes, so that each V-shaped The grooves contain the sub-millimeter light-emitting diode. 如請求項9之次毫米發光二極體背光模組,其中,任二相鄰之該等V型溝槽之間距與該等次毫米發光二極體之間距相等,而使每一該V型溝槽皆容置有該次毫米發光二極體。For example, the sub-millimeter light-emitting diode backlight module of claim 9, wherein the distance between any two adjacent V-shaped grooves is equal to the distance between the sub-millimeter light-emitting diodes, so that each V-shaped The grooves contain the sub-millimeter light-emitting diode. 如請求項1之次毫米發光二極體背光模組,其中,該等供光空間係分別由一梯型溝槽框圍形成,且當該等次毫米發光二極體之寬度為a,高度為b時,該等梯型溝槽之底面寬度係至少為1.3a,該等梯型溝槽之深度係至少為1.3b。For example, the sub-millimeter light-emitting diode backlight module of claim 1, wherein the light supply spaces are respectively formed by a trapezoidal groove frame, and when the width of the sub-millimeter light-emitting diode is a, the height When it is b, the width of the bottom surface of the trapezoidal grooves is at least 1.3a, and the depth of the trapezoidal grooves is at least 1.3b. 如請求項21之次毫米發光二極體背光模組,其中,任二相鄰之該等梯型溝槽之間距與該等次毫米發光二極體之間距相等,而使每一該梯型溝槽皆容置有該次毫米發光二極體。For example, the sub-millimeter light-emitting diode backlight module of claim 21, wherein the distance between any two adjacent trapezoidal grooves is equal to the distance between the sub-millimeter light-emitting diodes, and each of the ladder-shaped The grooves contain the sub-millimeter light-emitting diode. 如請求項22之次毫米發光二極體背光模組,其中,該等梯型溝槽之深度為1.3b~2.5b。For example, the sub-millimeter light emitting diode backlight module of claim 22, wherein the depth of the ladder-shaped grooves is 1.3b to 2.5b. 如請求項21之次毫米發光二極體背光模組,其中,該等梯型溝槽之深度為1.3b~2.5b。For example, the sub-millimeter light emitting diode backlight module of claim 21, wherein the depth of the ladder-shaped grooves is 1.3b to 2.5b. 如請求項1之次毫米發光二極體背光模組,其中,該入光面係具有複數撐高部,該等撐高部係凸出該入光面且間隔排列設置,而使該等供光空間分別由該入光面與該等撐高部所夾設形成。For example, the sub-millimeter light-emitting diode backlight module of claim 1, wherein the light incident surface has a plurality of supporting heights, and the supporting heights protrude from the light incident surface and are arranged at intervals, so that the supply The light space is formed by sandwiching the light incident surface and the supporting parts. 如請求項25之次毫米發光二極體背光模組,其中,等次毫米發光二極體之寬度為0.11~0.24mm。For example, the sub-millimeter light-emitting diode backlight module of claim 25, wherein the width of the sub-millimeter light-emitting diode is 0.11 to 0.24 mm. 如請求項26之次毫米發光二極體背光模組,其中,該等撐高部之凸出長度係為0.1~0.3mm。For example, the sub-millimeter light-emitting diode backlight module of claim 26, wherein the protruding length of the supporting parts is 0.1-0.3 mm. 如請求項27之次毫米發光二極體背光模組,其中,該等撐高部相對連接該入光面之側係為一平面。For example, the sub-millimeter light-emitting diode backlight module of claim 27, wherein the side of the supporting parts connected to the light incident surface is a flat surface. 如請求項28之次毫米發光二極體背光模組,其中,該等撐高部之間距為0.7~0.9mm。For example, the sub-millimeter light-emitting diode backlight module of claim 28, wherein the distance between the raised parts is 0.7-0.9 mm. 如請求項29之次毫米發光二極體背光模組,其中,該入光面對應該供光空間之區域設有複數光學微結構。For example, the sub-millimeter light emitting diode backlight module of claim 29, wherein the light incident surface is provided with a plurality of optical microstructures in the area where the light supply space should be provided. 如請求項25之次毫米發光二極體背光模組,其中,該等撐高部之凸出長度係為0.1~0.3mm。For example, the sub-millimeter light emitting diode backlight module of claim 25, wherein the protruding length of the supporting parts is 0.1-0.3 mm. 如請求項25之次毫米發光二極體背光模組,其中,該等撐高部相對連接該入光面之側係為一平面。For example, the sub-millimeter light-emitting diode backlight module of claim 25, wherein the side of the supporting parts connected to the light incident surface is a flat surface. 如請求項26之次毫米發光二極體背光模組,其中,該等撐高部相對連接該入光面之側係為一平面。For example, the sub-millimeter light-emitting diode backlight module of claim 26, wherein the side of the supporting parts connected to the light incident surface is a flat surface. 如請求項25之次毫米發光二極體背光模組,其中,該等撐高部之間距為0.7~0.9mm。For example, the sub-millimeter light emitting diode backlight module of claim 25, wherein the distance between the supporting parts is 0.7-0.9 mm. 如請求項26之次毫米發光二極體背光模組,其中,該等撐高部之間距為0.7~0.9mm。For example, the sub-millimeter light emitting diode backlight module of claim 26, wherein the distance between the raised parts is 0.7-0.9 mm. 如請求項27之次毫米發光二極體背光模組,其中,該等撐高部之間距為0.7~0.9mm。For example, the sub-millimeter light emitting diode backlight module of claim 27, wherein the distance between the raised parts is 0.7-0.9 mm. 如請求項25之次毫米發光二極體背光模組,其中,該入光面對應該供光空間之區域設有複數光學微結構。For example, the sub-millimeter light emitting diode backlight module of claim 25, wherein the light incident surface is provided with a plurality of optical microstructures in the area where the light supply space should be provided. 如請求項26之次毫米發光二極體背光模組,其中,該入光面對應該供光空間之區域設有複數光學微結構。For example, the sub-millimeter light-emitting diode backlight module of claim 26, wherein the light incident surface is provided with a plurality of optical microstructures in the area where the light supply space should be provided. 如請求項27之次毫米發光二極體背光模組,其中,該入光面對應該供光空間之區域設有複數光學微結構。For example, the sub-millimeter light emitting diode backlight module of claim 27, wherein the light incident surface is provided with a plurality of optical microstructures in the area where the light supply space should be provided. 如請求項28之次毫米發光二極體背光模組,其中,該入光面對應該供光空間之區域設有複數光學微結構。For example, the sub-millimeter light emitting diode backlight module of claim 28, wherein the light incident surface is provided with a plurality of optical microstructures in the area where the light supply space should be provided.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI790941B (en) * 2022-03-10 2023-01-21 隆達電子股份有限公司 Light-emitting module

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI790941B (en) * 2022-03-10 2023-01-21 隆達電子股份有限公司 Light-emitting module

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