TWM588363U - A composite substrate strengthened structures and flexible substrate applied in flexible electical devices - Google Patents

Abstract

A reinforced structure for a composite substrate applied to flexible electronic components includes a support carrier and a release flexible substrate, an inorganic thin film, a flexible substrate, and a silicon-based inorganic thin film which are sequentially formed thereon. The flexible flexible substrate occupies a first area, the inorganic thin film occupies a second area and covers the release flexible soft substrate, the flexible substrate occupies a third area, and the silicon-based inorganic thin film occupies a fourth area and covers the Flexible substrate; wherein the adhesion of the inorganic thin film to the support carrier is greater than or equal to the adhesion of the flexible substrate to the support carrier and the adhesion of the release flexible substrate to the support carrier, respectively. The adhesion of the silicon-based inorganic thin film to the support carrier is greater than or equal to the adhesion of the flexible substrate to the support carrier and the adhesion of the release flexible substrate to the support carrier, respectively. The inorganic thin film is an inorganic oxide thin film composed of at least one selected from the group consisting of silicon, carbon, aluminum, magnesium, calcium, potassium, tin, sodium, boron, titanium, lead, zirconium, and yttrium. Thereby, the overall mechanical strength of the flexible electronic component can be improved, and functions of blocking gas and water can be provided.

Description

Composite substrate reinforcement structure and flexible substrate for flexible electronic components

This creation relates to the technical field of flexible electronic devices, and particularly to a composite substrate reinforced structure for flexible electronic components and a flexible base material taken from the substrate reinforced structure, which can provide good mechanical strength and resistance of flexible electronic components. Gas and water blocking function.

Due to the rapid development of mobile communications and the combination of content services in 2011, flexible displays have become the development trend of new-generation novel displays. The world's major R & D companies have stepped from the current thick and fragile glass substrates to non-glass systems (such as lighter weight plastic substrate materials) and are moving towards active full-color TFT display panels. With the new application requirements of flat-panel displays in smart phones and tablets, product designs are moving towards thinner and lighter weight. Another high-profile development focus is flexible / soft display technology, which may open a new era of display design change in the future. With the maturity of mass production technology for small and medium-sized panels, there is an opportunity to mass-produce flexible flexible electronic devices under the requirements of lightness and thinness, and strive for the value of battery space.

The manufacturing method of the flexible substrate of the flexible flexible electronic device can be divided into two types, a batch type and a roll to roll method. If you choose to make TFT elements in batches, you can use existing TFT equipment to make them, which has considerable advantages. But the batch type must develop the so-called substrate transfer or release film technology, transfer the flexible display from glass to other flexible substrates, or remove the flexible substrate from the glass substrate. The roll-to-roll type must be carried out with brand-new equipment, and the related problems caused by rotation and contact must be overcome. TFT elements such as LTPS are manufactured in a batch process. Because the process temperature is higher than 400 ° C, high temperature resistant materials are required. Since the batch type can use the related process equipment of the existing glass substrate, the cost of equipment can be saved. However, how to avoid the release condition during the manufacturing process on the flexible substrate on the glass, and after the component is completed, the flexible substrate can be easily removed without sticking to the glass will be a key point.

Furthermore, in order to reduce the thickness of flexible flexible electronic devices or organic light-emitting diode displays and the convenience of portable substrates, flexible substrates with flexible pitch and impact resistance become indispensable. FPD substrates are widely used as glass substrates. However, if the glass substrate is reduced in thickness in order to impart flexibility to the glass substrate, the impact resistance is likely to be insufficient. Furthermore, if the impact resistance is considered, As a substrate for FPD, an excellent, lightweight, and flexible resin film is liable to cause problems with insufficient gas barrier properties (for example, oxygen barrier properties or water vapor barrier properties).

In view of this, the author is responsible for this. In view of the shortcomings in the conventional technology, the creator has conscientiously experimented and researched, and devoted himself to this idea.

In view of this, the purpose of this creation is to propose a composite substrate reinforcement structure and a flexible substrate applied to flexible electronic components. A double-layered flexible substrate is used instead of a single flexible substrate, and the Hard inorganic oxidized adhesive layer to improve the mechanical strength of the overall structure, and through the gas barrier film formed by the protective layer formed on the flexible substrate, in a high temperature and high humidity environment, it can provide a variety of flexible electronic components in high temperature resistance 2. It can bring gas and water resistance under the conditions of humidity resistance, and even has antifouling effect.

According to one of the purposes of this creation, this creation provides a composite substrate reinforcement structure applied to flexible electronic components, which includes a support carrier and a bearing surface on which a release flexible substrate is sequentially formed. An inorganic thin film, a flexible substrate, and a silicon-based inorganic thin film, the release flexible substrate occupies a first area, the inorganic thin film occupies a second area and covers the release flexible substrate, and the flexible substrate occupies A third area, the silicon-based inorganic thin film occupying a fourth area and covering the flexible substrate; wherein the first area selectivity is greater than or equal to the third area, the second area is greater than the first area, and the fourth area Larger than the third area; the adhesion of the inorganic thin film to the support carrier is greater than or equal to the adhesion of the flexible substrate to the support carrier and the adhesion of the release flexible substrate to the support carrier, respectively. And the adhesion of the silicon-based inorganic thin film to the support carrier is respectively greater than or equal to the adhesion of the flexible substrate to the support carrier and the pair of release flexible substrates. Support the adhesion of the carrier board; the inorganic thin film is composed of at least one selected from the group consisting of silicon, carbon, aluminum, magnesium, calcium, potassium, tin, sodium, boron, titanium, lead, zirconium and yttrium Inorganic oxide film.

According to another object of the present invention, the present invention provides a flexible base material obtained from the reinforced structure of the composite machine board, which is a separation flexible substrate, an inorganic thin film, A flexible substrate and a flexible substrate of a silicon-based inorganic thin film. The release flexible substrate has a first configuration area; the inorganic thin film is disposed on the release flexible substrate with a second configuration area. The flexible substrate is disposed on the inorganic thin film with a third configuration area; the silicon-based inorganic thin film is covered on the flexible substrate with a fourth configuration area; wherein the third area is smaller than the first configuration area respectively The second configuration area and the fourth configuration area.

According to another object of the present invention, the present invention provides a flexible base material obtained from the reinforced structure of the composite machine board, which is a separation flexible substrate, an inorganic thin film, A flexible substrate and a flexible substrate of a silicon-based inorganic thin film. The release flexible substrate has a first configuration area; the inorganic thin film is disposed on the release flexible substrate with a second configuration area. The flexible substrate is disposed on the inorganic thin film with a third configuration area; the silicon-based inorganic thin film is disposed on the flexible substrate with a fourth configuration area; wherein the first configuration area, the second configuration area, The third arrangement area and the fourth arrangement area are the same as each other.

According to an embodiment of the present invention, a thickness ratio between a thickness of the release flexible substrate and a thickness of the supporting substrate is between 0.001 and 0.2; a thickness of the inorganic thin film and a thickness of the supporting substrate The thickness ratio between the thickness is between 0.00005 ~ 0.02; the thickness ratio between the thickness of the flexible substrate and the thickness of the support carrier is between 0.001 and 0.2; the thickness of the silicon-based inorganic film and the support The thickness ratio between the thicknesses of the carrier plates is between 0.00005 and 0.02.

According to an embodiment of the present invention, the thickness of the flexible substrate with release is greater than the thickness of the inorganic thin film or the thickness of the silicon-based inorganic thin film, and the thickness of the flexible substrate is greater than the thickness of the inorganic thin film or the silicon-based inorganic The thickness of the film, the thickness of the flexible substrate is greater than or equal to the thickness of the release flexible substrate.

According to an embodiment of the present invention, the inorganic thin film is selected from the group consisting of silicon oxide (SiO _x ), silicon nitride (SiN _x ), silicon oxynitride (SiO _x N _y ), magnesium oxide (MgO _x ), and calcium oxide ( CaO _x ), indium tin oxide (ITO), niobium pentoxide (Nb ₂ O ₅ ), a single layer structure, or a multilayer structure of two or more of them.

According to an embodiment of the present invention, the silicon-based inorganic thin film is a single-layer structure selected from any one of the foregoing selected from silicon oxide (SiO _x ), silicon nitride (SiN _x ), and silicon oxynitride (SiO _x N _y ). Or a multilayer structure of more than two.

According to an embodiment of the present invention, the release flexible substrate includes a bonding material, and the bonding material includes at least an amide functional group or a silane functional group.

According to an embodiment of the present invention, the flexible substrate comprises an aromatic or aliphatic polyimide, a transparent polyimide, or a poly (amic) acid.

According to an embodiment of the present invention, the supporting substrate is a glass, a metal plate or a silicon wafer.

The detailed description and technical content of this creation are described below in conjunction with the drawings. However, the drawings are provided for reference and explanation only, and are not intended to limit the creation. This creative department exposes one. The drawings in the following text are not completely drawn according to the actual relevant dimensions. Their function is only to express the schematic diagrams related to the characteristics of this creation.

Please refer to FIG. 1 and FIG. 2 respectively, which respectively draw a side cross-sectional view and a top schematic diagram of an embodiment of the composite substrate reinforcement structure described in this creation. This creation provides a composite substrate reinforcement structure applied to flexible electronic components. The substrate structure has high temperature resistance characteristics. A release material layer is introduced between the support carrier and the flexible substrate. The release material layer can separate the softness. Substrate and support carrier, to avoid the problem that after the high temperature process of the flexible substrate, the flexible substrate and the support substrate stick to each other and cannot be separated, causing the problem that the flexible substrate cannot be removed; at the same time, a hard material is formed between the release material layer and the flexible substrate The adhesive layer forms a composite structure to increase the mechanical strength of the overall structure. Furthermore, the formation of a protective layer on the flexible substrate can prevent the flexible substrate from adsorbing environmental moisture and reduce the adhesion between the flexible substrate and the support substrate. The above-mentioned substrate structure is more helpful for improving the process yield.

The substrate structure provided in an embodiment of the present invention can be used in the process of manufacturing flexible electronic components. The composite substrate reinforced structure 100 includes a support substrate 10, a flexible substrate 20 with a release property, an inorganic thin film 30 as a hard adhesive layer, a flexible substrate 40, and a silicon-based inorganic thin film 50 as a protective layer. The support substrate 10 has A bearing surface 11 is formed with the release flexible substrate 20, the inorganic thin film 30, the flexible substrate 40, and the silicon-based inorganic thin film 50 on the bearing surface 11 in this order, and the release flexible substrate 20 Occupies a first area A1, the inorganic thin film 30 occupies a second area A2 and covers the release flexible substrate 20, the flexible substrate 40 occupies a third area A3, and the silicon-based inorganic film 50 occupies a fourth area A4 covers the flexible substrate; wherein the first area A1 is equal to the third area A3, the second area A2 is larger than the first area A1, and the fourth area A4 is larger than the third area A3. It is explained here that the text descriptions of "same" and "equal" mentioned in this article are not completely the same or completely equal. They are only used to represent a concept that is approximately the same or approximately equal, and its error is expressed in terms of physical quantities. The range is below ± 5%.

According to an embodiment of the present invention, the supporting substrate 10 may include glass, metal plate or silicon wafer, and the pattern of the release flexible substrate 20 may be one or more blocks. In this embodiment, one region is used. Block representation. Here, the pattern of the release layer 20 is only used as an example. Those skilled in the art can select the shape, size, and density of the appropriate pattern of the release layer 20 according to requirements. The flexible flexible substrate 20 contains a bonding material. The bonding material includes at least an amide functional group or a silanes functional group and is bonded to the support carrier 10 and the flexible substrate 40 with a difference in adhesion. .

According to an embodiment of the present invention, the adhesion of the inorganic thin film 30 to the support carrier 10 is greater than or equal to the adhesion of the flexible substrate 40 to the support carrier 10 and the release flexible substrate 20, respectively. The adhesion of the support substrate 10 to the support substrate 10, and the adhesion of the silicon-based inorganic thin film 50 to the support substrate 10 are respectively greater than or equal to the adhesion of the flexible substrate 40 to the support substrate 10 and the fixture. Adhesion of the release flexible substrate 20 to the support substrate 10.

As mentioned above, when the adhesion of the inorganic thin film 30 to the support carrier 10 is greater than the adhesion of the release flexible substrate 20 to the inorganic thin film 30, the mold can be released by cutting and applying force. The flexible flexible substrate 20 is separated from the interface between the support substrate 10 and the flexible flexible substrate 20, and the flexible flexible substrate 20 is left on the flexible substrate 40 together with the inorganic thin film 30 as the flexible substrate. Used as a protective film for the substrate 40. In one embodiment, the adhesion between the release flexible substrate 20 and the support carrier 10 may be between 1B and 3B (100 grid knife adhesion test).

According to an embodiment of the present invention, the release flexible substrate 20 is an aromatic polyimide, which is a copolymer of a diamine and a dianhydride. Diamine-based 4,4'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, p-phenylenediamine, 2,2'-bis (trifluoromethyl) diaminobiphenyl, Or a combination thereof, and the dianhydride is pyromellitic dianhydride, biphenyltetracarboxylic dianhydride, 4,4 '-(hexafluoroisopropene) diphthalic anhydride, or a combination thereof. Diamine and dianhydride are first polymerized to form polyamic acid (PAA), and then dehydrated to form polyimide (PI), as shown in the following formula 1:

In Formula 1, Ar 1 and Ar 2 are each an aromatic group, and n is a repeating number. In actual operation, a diamine and a dianhydride may be first polymerized to form a polyamic acid, and then the solid content in the polyamino acid solution may be adjusted with a polar aprotic solvent such as dimethylacetamide (DMAc). Then, a polyamic acid solution is coated on the supporting surface 11 of the supporting substrate 10, and the coating is heated to make the polyamic acid react to form the flexible flexible substrate 20 having polyimide. The heating film forming temperature is approximately Between 250 ~ 380 ℃, and the heating time is adjusted according to different temperatures.

In an embodiment of the present invention, the polyamic acid solution is coated on the supporting surface 11 of the supporting substrate through Slot die coating technology to form the release softness. Substrate 20; its thickness uniformity can be above 90%.

In an embodiment of the present invention, a thickness t2 of the flexible substrate 20 having a release property is between 1 μm and 20 μm. If the thickness of the mold-releasing flexible substrate 20 is too thick, the cost will increase, and the surface of the film after baking will tend to be poor. If the thickness of the mold-releasing flexible substrate 20 is too thin, unevenness is liable to occur during coating, which may cause partial mold-release failure.

In an embodiment of the present invention, in addition to the polyimide, the above-mentioned release flexible substrate 20 may also use a silicon-based compound as the release layer material of the present invention, such as a silane compound; the following formula 2:

Part of the methyl group of the basic polymer compound, polydimethylsiloxane, is replaced by vinyl, and Polymethyl-hydrodienesiloxane is used as a bridging agent; and it is coated on a support carrier. On the bearing surface 11 of the plate 10, the coating is heated to cause it to react to form the release flexible substrate 20 of polydimethylsiloxane; wherein the heating film formation temperature is approximately between 200 ° C and 280 ° C, and the heating is performed. Time is adjusted according to different temperatures.

The support substrate 10 with the release flexible substrate 20 is formed, and then the inorganic thin film 30 is deposited on the bearing surface 11 of the support substrate 10 with a second area A2, and the second area A2 is larger than the first area A1. To cover the release flexible substrate 20; wherein the inorganic thin film 30 is a group consisting of silicon, carbon, aluminum, magnesium, calcium, potassium, tin, sodium, boron, titanium, lead, zirconium and yttrium An inorganic oxide film composed of at least one of the above; preferably, the inorganic film 30 is selected from the group consisting of silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy), magnesium oxide (MgOx), Any one of the foregoing single layer structure of calcium oxide (CaOx), indium tin oxide (ITO), and niobium pentoxide (Nb2O5), or a multilayer structure of any two or more of the foregoing. The method for depositing the inorganic thin film 50 may be, for example, a vapor deposition method, an ion thermal CVD method, a plasma CVD method, or the like, and is not limited herein.

According to an embodiment of the present invention, a thickness t3 of the inorganic thin film 30 is between 0.05 μm and 2 μm. If the thickness of the inorganic thin film 30 is too thick, the cost will increase. If the thickness of the inorganic thin film 30 is too thin, sufficient mechanical strength of the finished product may not be provided.

The supporting substrate 10 with the release flexible substrate 20 and the inorganic thin film 30 is formed, and then the flexible substrate 40 is formed on the supporting surface 11 of the supporting substrate 10 with a third area A3, and the third area A3 is smaller than The second area A2 allows the flexible substrate 40 to be completely attached on the inorganic thin film 30. In one embodiment, the adhesion between the flexible substrate 40 and the support substrate 10 may be between 3B and 5B (100 grid knife adhesion test). In practice, a solution of the material of the flexible substrate 40 may be coated on the support substrate 10 on which the flexible substrate 20 with release properties and the inorganic thin film 30 are molded to form a coating layer. The flexible substrate 40 may be polyimide, transparent polyimide, polycarbonate, polyether, polyacrylate, polyorbornene, polyethylene terephthalate, polyetheretherketone, polynaphthalene Ethylene glycol dicarboxylate, or polyetherimide.

According to an embodiment of the present invention, the aromatic polyimide of the release flexible substrate 20 is different from the composition of the flexible substrate 40, and the thickness of the flexible substrate 40 is between 1 μm and 20 μm. If the thickness of the flexible substrate 40 is too thick, the cost will increase. If the thickness of the flexible substrate 40 is too thin, sufficient mechanical strength of the finished product may not be provided.

The above-mentioned release flexible substrate 20, the inorganic thin film 30, and the support substrate 10 of the flexible substrate 40 are respectively formed, and the silicon-based inorganic thin film 50 as a protective layer is deposited on the bearing surface with a fourth area A4. 11 and the fourth area A4 is larger than the third area A3 so that the silicon-based inorganic thin film 50 completely covers the flexible substrate 40. In one embodiment, the material of the silicon-based inorganic thin film 50 is a single layer selected from any one of the foregoing selected from silicon oxide (SiO _x ), silicon nitride (SiN _x ), and silicon oxynitride (SiO _x N _y ). Structure; As for the deposition method of the silicon-based inorganic thin film 50, for example, a vapor deposition method, an ion thermal CVD method, a plasma CVD method, and the like are not limited herein. The silicon-based inorganic thin film 50 having a thickness t5 of at least 0.1 μm or more, a silicon nitride of at least 0.1 μm or more, or a silicon nitride of at least 0.1 μm or more is formed through these devices.

According to an embodiment of the present invention, the material of the silicon-based inorganic thin film 50 may also be any two selected from the group consisting of silicon oxide (SiO _x ), silicon nitride (SiN _x ), and silicon oxynitride (SiO _x N _y ). Or a multilayer structure thereof; wherein the silicon-based inorganic thin film 50 has a thickness of at least 0.1 μm or more of silicon oxide, a thickness of at least 0.1 μm or more of silicon nitride, or a thickness of at least 0.1 μm or more of silicon nitride The multilayer structure of the two or more is such that the overall thickness t5 of the silicon-based inorganic thin film 50 is at least 0.2 μm.

According to the above description, the silicon-based inorganic thin film 50 as a protective layer is mainly used as a gas barrier film; it is explained here that the so-called "gas barrier property" of the thin film suppresses the penetration of gas such as oxygen or water vapor to provide soft electrons Gas blocking, water blocking and / or anti-fouling effect of components. The protective layer 40, which is a gas barrier film, has a water vapor transmission rate of 40 ° C and a relative humidity of 90%, usually 0.5 g / m ² / day or less; preferably, water vapor transmission The rate is below 0.005g / m ² / day; the water vapor transmission rate can be measured by conventional methods, and will not be repeated here.

Please refer to FIG. 3 to FIG. 4 again, which respectively draw a side cross-sectional view and a top schematic diagram of another embodiment of the composite substrate reinforcement structure described in this creation. The main difference between this embodiment and the previous embodiment lies in the coating area of the flexible substrate. The component parts similar to or the same as those of the previous embodiment are not repeated here, and the components use the component symbols of the previous embodiment. In this embodiment, the composite machine plate reinforcement structure 100 'includes a support carrier 10, a release flexible substrate 20, an inorganic thin film 30 as a hard adhesive layer, a flexible substrate 40', and a silicon-based inorganic film as a protective layer. 50; the release flexible substrate 20, the inorganic thin film 30, the flexible substrate 40 ', and the silicon-based inorganic thin film 50 are sequentially formed on the bearing surface 11 of the support carrier 10, and the release The flexible flexible substrate 20 occupies the first area A1, the inorganic thin film 30 occupies the second area A2 and covers the release flexible substrate 20, the flexible substrate 40 'occupies a third area A3', and the silicon-based inorganic film 50 occupies the fourth area A4 and covers the flexible substrate; wherein the first area A1 is larger than the third area A3, the second area A2 is larger than the first area A1, and the fourth area A4 is larger than the third area A3.

In each of the embodiments of the above-mentioned composite substrate reinforced structure (100, 100 '), a flexible substrate is taken from the substrate reinforced structure for the following to provide sufficient mechanical strength of a flexible electronic component and consider economic benefits. The design of the thickness between the components must meet the following conditions:

The thickness ratio (t2 / t1) between the thickness t2 of the release flexible substrate 20 and the thickness t1 of the support carrier 10 is between 0.001 and 0.2; the thickness t3 of the inorganic thin film 30 and the support carrier The thickness ratio (t3 / t1) between the thickness t1 of the board 10 is between 0.00005 and 0.02; the thickness ratio between the thickness t4 of the flexible substrate (40, 40 ') and the thickness t1 of the support carrier 10 (t4 / t1) is between 0.001 and 0.2; the thickness ratio (t5 / t1) between the thickness t5 of the silicon-based inorganic thin film 50 and the thickness t1 of the support substrate is between 0.00005 and 0.02.

As mentioned above, the design of the thickness between the components further meets the following conditions:

The thickness t2 of the release flexible substrate 20 is greater than the thickness (t3) of the inorganic thin film 30 or the thickness (t5) of the silicon-based inorganic thin film 50; the thickness t4 of the flexible substrate (40, 40 ') is greater than the inorganic thin film. The thickness t3 of 30 or the thickness t5 of the silicon-based inorganic thin film 50; the thickness t4 of the flexible substrate (40, 40 ') is greater than or equal to the thickness t2 of the flexible substrate 20 with release.

Please also refer to FIG. 5 and FIG. 6A-6B of this creation, which respectively draw the manufacturing process of the flexible substrate of this creation. First, the composite substrate reinforcement structure 100 shown in FIG. 1 is provided, and electronic components (not shown) can be selectively formed thereon; the above components can be thin film transistor (TFT), micro-electromechanical (MEM) components, and photoelectric conversion An element, an electroluminescent element such as an organic light emitting diode (OLED), other elements, or a combination thereof may or may not be formed on the electronic element, and is designed according to practical application considerations.

Then separate the support carrier 10 from the release flexible substrate 20; the separation method of this creation is not based on the conventional laser lift-off (LLO) technology, so it is not on the back of the support carrier 10 (bearing surface 11) Opposite the other surface) is irradiated with a laser light wave for resection. The separation method of this creation is lift-off by mechanical cutting on the surface. In an ideal case, the cutting step is as shown in FIG. 5, and the two ends of the release flexible substrate 20 are used as the cutting points (C1). However, in the actual case, the above separation step cuts the edge portion where the release flexible substrate 20 and the flexible substrate 40 overlap (the cut-off point C2, as shown in FIG. 6A) in a direction that vertically supports the carrying surface 11 of the carrier plate 10. In order to avoid any flexible substrate 40 remaining between the cut flexible substrate and the supporting substrate 10. Here, although the cutting step shown in the figure cuts through the support carrier 10, it can be cut to the surface of the support carrier 10 in actual operation without completely passing through the support carrier 10.

After the above cutting step, the flexible substrate 40 has a silicon-based inorganic thin film 50 for blocking gas, and only the release flexible substrate 20 and the inorganic thin film 30 are provided between the flexible substrate 40 and the support carrier 10 without any flexible substrate 40 and support. The carrier boards 10 are connected. In this way, it constitutes the flexible substrate 200 of the present invention. The flexible substrate 200 is a self-supporting carrier plate 10 separated from a flexible substrate 20 having a release property, an inorganic film 30, a flexible substrate 40, and a silicon-based inorganic film. 50. After cutting, the release flexible substrate has a first configuration area (not shown); the inorganic thin film 30 has a second configuration area (not shown) and is disposed on the release flexible substrate 20; the flexible substrate 40 is disposed on the inorganic thin film 30 with a third disposition area (not shown); the silicon-based inorganic film 50 is disposed on the flexible substrate with a fourth disposition area (not shown) 40; wherein the first configuration area, the second configuration area, the third configuration area, and the fourth configuration area are the same as each other, as shown in FIG. 6B.

Please also refer to FIGS. 7A-7B of this creation, which respectively draw the manufacturing process of another embodiment of the flexible substrate of this creation. In this embodiment, the same or similar parts as those in the above embodiment are not described herein. First, a composite substrate reinforcing structure 100 ′ shown in FIG. 3 is provided, and then the support carrier 10 and the release flexible substrate 20 are separated. The separation step is to support the carrier surface 11 of the carrier 10 in a direction perpendicular to the support substrate 10 and cut the mold. After the edge portion of the flexible substrate 20 and the flexible substrate 40 overlap (cut point C3, as shown in FIG. 7A), the silicon-based inorganic thin film 50 completely covers the flexible substrate 40 'after the above cutting step to provide a more gas-barrier effect. Moreover, there is only a flexible substrate 20 having a release property and an inorganic thin film 30 between the flexible substrate 40 ′ and the supporting substrate 10, and no flexible substrate 40 is connected to the supporting substrate 10. In this way, the flexible substrate 200 ′ that constitutes the original creation is a flexible substrate 200 ′ that separates the release flexible substrate 20, the inorganic thin film 30, the flexible substrate 40 ′, and the silicon from the self-supporting carrier plate 10. The base inorganic thin film 50 has a first disposition area (not shown) after being cut; the inorganic thin film 30 has a second disposition area (not shown) and is disposed on the release property. Above the flexible substrate 20; the flexible substrate 40 'is disposed on the inorganic thin film 30 with a third arrangement area (not shown); and the silicon-based inorganic thin film 50 is covered with a fourth arrangement area (not shown) Above the flexible substrate 40 '; wherein the third configuration area is smaller than the first configuration area, the second configuration area, and the fourth configuration area, respectively, as shown in FIG. 7B.

It is explained here that the flexible substrate (200,200 ') described in the above embodiments, and the release flexible substrate 20 can be used as a protective film for the product. There is no need to separate and support the carrier plate 10 and the release substrate. The flexible substrate 20 is removed immediately after the step. For example, after the product is delivered to the user, the user can separate the release flexible substrate 20 and the flexible substrate 40 by themselves, and the separation method can be simple tearing. On the other hand, if the above-mentioned flexible substrate 40 having components thereon is a semi-finished product, it can be removed after being transported to the next processing place.

In summary, the composite substrate reinforcement structure and flexible substrate applied to flexible electronic components disclosed in this creation use between the release flexible substrate 20 and the flexible substrate (40, 40 '). The inorganic thin film 30 is formed, and a single flexible substrate is mainly replaced by a double-layered flexible substrate, and a rigid inorganic oxidation adhesive layer is used between the double-layered adhesive substrates to improve the mechanical strength of the overall structure; moreover, the flexible substrate (40 , 40 ') as a gas barrier film, under the high temperature and high humidity environment, it is not easy to cause poor adhesion with the flexible substrate (40, 40'), can be used as Application of gas barrier film layers of various flexible electronic components, especially the resistance of electronic components under conditions of heat and humidity resistance, such as flexible flexible electronic displays, touch panels, solar electronic components and other electronic flexible electronic components that require flexibility The gas effect can provide soft electronic components to bring gas, water and even anti-fouling effects.

Although the above-mentioned preferred embodiment is disclosed as above, it is not intended to limit the creation. Any person skilled in similar arts can make some changes and retouch without departing from the spirit and scope of the creation. The scope of patent protection for creation must be defined by the scope of patent application attached to this specification. However, the specific embodiments described above are only used to illustrate the characteristics and effects of this creation, not to limit the implementable scope of this creation. Any application without departing from the spirit and technical scope of this creation The equivalent changes and modifications made by the contents disclosed in this creation shall still be covered by the scope of patent application described below.

10‧‧‧ support carrier
11‧‧‧ bearing surface
20‧‧‧Releasable flexible substrate
30‧‧‧ inorganic film
40,40'‧‧‧flexible substrate
50‧‧‧ Silicon-based inorganic thin film
100,100'‧‧‧ composite substrate reinforced structure
200,200'‧‧‧ flexible substrate
A1‧‧‧first area
A2‧‧‧Second Area
A3, A3'‧‧‧ third area
A4‧‧‧ Fourth area
C1, C2, C3‧‧‧‧cut points
t1‧‧‧ thickness of support carrier
t2‧‧‧Thickness of release flexible substrate
t3‧‧‧thickness of inorganic film
t4‧‧‧thickness of flexible substrate
t5‧‧‧thickness of silicon-based inorganic thin film

FIG. 1 is a side cross-sectional view illustrating an embodiment of a composite substrate reinforcement structure of the present invention.
FIG. 2 is a schematic top view of an embodiment of the composite substrate reinforcement structure of the present invention.
FIG. 3 is a side cross-sectional view illustrating another embodiment of the composite substrate reinforcement structure of the present invention.
FIG. 4 is a schematic top view illustrating another embodiment of the composite substrate reinforcement structure of the present invention.
Figure 5 is a drawing of the production process of the flexible substrate (ideal cut-off point location) of this creation.
6A-6B are drawings illustrating a manufacturing process of an embodiment of the flexible substrate of the present invention.
7A-7B illustrate a manufacturing process of another embodiment of the flexible substrate of the present invention.

Claims (10)

A composite substrate reinforcement structure applied to flexible electronic components, including:
A support carrier plate having a bearing surface and a release flexible substrate, an inorganic film, a flexible substrate, and a silicon-based inorganic film are sequentially formed on the bearing surface. The release flexible substrate occupies one A first area, the inorganic thin film occupies a second area and covers the release flexible substrate, the flexible substrate occupies a third area, and the silicon-based inorganic thin film occupies a fourth area and covers the flexible substrate;
The adhesion of the inorganic thin film to the support carrier is respectively greater than or equal to the adhesion of the flexible substrate to the support carrier and the adhesion of the release flexible substrate to the support carrier, and the The adhesion of the silicon-based inorganic thin film to the support carrier is respectively greater than or equal to the adhesion of the flexible substrate to the support carrier and the adhesion of the release flexible substrate to the support carrier;
The inorganic thin film is an inorganic oxide thin film composed of at least one selected from the group consisting of silicon, carbon, aluminum, magnesium, calcium, potassium, tin, sodium, boron, titanium, lead, zirconium, and yttrium. As described in item 1 of the scope of the patent application, the composite substrate reinforced structure applied to flexible electronic components, wherein the thickness ratio between the thickness of the release flexible substrate and the thickness of the support substrate is between 0.001 and 0.2. between;
The thickness ratio between the thickness of the inorganic thin film and the thickness of the support carrier is between 0.00005 and 0.02;
The thickness ratio between the thickness of the flexible substrate and the thickness of the support carrier is between 0.001 and 0.2;
The thickness ratio between the thickness of the silicon-based inorganic thin film and the thickness of the supporting substrate is between 0.00005 and 0.02. As described in item 1 of the scope of the patent application, the composite substrate reinforced structure applied to flexible electronic components, wherein the first area selectivity is greater than or equal to the third area, the second area is greater than the first area, and the fourth area Larger than the third area; the thickness of the flexible substrate with release is greater than the thickness of the inorganic film or the thickness of the silicon-based inorganic film, and the thickness of the flexible substrate is greater than the thickness of the inorganic film or the thickness of the silicon-based inorganic film Thickness, the thickness of the flexible substrate is greater than or equal to the thickness of the release flexible substrate. The reinforced structure of a composite substrate applied to a flexible electronic component as described in item 1 of the scope of the patent application, wherein the inorganic thin film is selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride, magnesium oxide, calcium oxide, indium tin oxide, Any one of the foregoing niobium pentoxide single-layer structures or multilayer structures of two or more. The reinforced structure for a composite substrate applied to a flexible electronic component as described in item 1 of the scope of the patent application, wherein the silicon-based inorganic thin film is a single-layer structure selected from any one of the foregoing selected from silicon oxide, silicon nitride, and silicon oxynitride. Or a multilayer structure of more than two. The reinforced structure of a composite substrate applied to a flexible electronic component as described in item 1 of the scope of the patent application, wherein the release flexible substrate contains a bonding material, and the bonding material contains at least one amidine functional group or one silane functional group. base. The reinforced structure of a composite substrate applied to a flexible electronic component according to item 1 of the scope of the patent application, wherein the flexible substrate comprises an aromatic or aliphatic polyimide, a transparent polyimide, or a polyamic acid. The reinforced structure for a composite substrate applied to a flexible electronic component as described in item 1 of the scope of the patent application, wherein the support carrier is a glass, a metal plate, or a silicon wafer. A flexible substrate applied to a flexible electronic component as described in any one of claims 1 to 2, 4 to 7 of the scope of patent application, which is to separate the release substrate from the support carrier. A flexible substrate, the inorganic thin film, the flexible substrate, and the flexible substrate of the silicon-based inorganic thin film; the release flexible substrate has a first configuration area;
The inorganic thin film is disposed on the release flexible substrate with a second configuration area;
The flexible substrate is disposed on the inorganic thin film with a third configuration area;
The silicon-based inorganic thin film covers the flexible substrate with a fourth configuration area;
The third configuration area is smaller than the first configuration area, the second configuration area, and the fourth configuration area, respectively. A flexible substrate applied to a flexible electronic component as described in any one of claims 1 to 2, 4 to 7 of the scope of patent application, which is to separate the release substrate from the support carrier. A flexible substrate, the inorganic thin film, the flexible substrate, and the flexible substrate of the silicon-based inorganic thin film; the release flexible substrate has a first configuration area;
The inorganic thin film is disposed on the release flexible substrate with a second configuration area;
The flexible substrate is disposed on the inorganic thin film with a third configuration area; and the silicon-based inorganic thin film is disposed on the flexible substrate with a fourth configuration area;
The first configuration area, the second configuration area, the third configuration area, and the fourth configuration area are the same as each other.