TWM581770U - LED package structure - Google Patents
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- TWM581770U TWM581770U TW108202992U TW108202992U TWM581770U TW M581770 U TWM581770 U TW M581770U TW 108202992 U TW108202992 U TW 108202992U TW 108202992 U TW108202992 U TW 108202992U TW M581770 U TWM581770 U TW M581770U
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Abstract
一種發光二極體之封裝結構,包括:一載體、一發光層、一封裝層及一光干擾層。該載體表面具有複數電極層及底部具有複數個焊墊,該些電極層及該些焊墊電性連結。該發光層係由複數個發光晶片組成,該些發光晶片以電性連結於該些電極層。該封裝層設於該載體的表面上,並將該些發光晶片封裝包覆。該光干擾層設於該封裝層的表面上。在發光二極體的封裝層表面上設有遮蔽光源射出的結構,能有效遮蔽距離相近的兩顆發光二極體的透光干擾問題,也使製作上更佳容易。A package structure of a light-emitting diode comprises: a carrier, a light-emitting layer, an encapsulation layer and a light interference layer. The carrier has a plurality of electrode layers on the surface and a plurality of pads on the bottom, and the electrode layers and the pads are electrically connected. The luminescent layer is composed of a plurality of luminescent wafers electrically connected to the electrode layers. The encapsulation layer is disposed on a surface of the carrier and encapsulates the light emitting chip packages. The light interference layer is disposed on a surface of the encapsulation layer. A structure for shielding the light source from being emitted on the surface of the encapsulation layer of the light-emitting diode can effectively shield the light-transmitting interference problem of the two light-emitting diodes with similar distances, and also make the production easier.
Description
本創作係有關於一種發光二極體,尤指一種避免透光干擾的發光二極體之封裝結構。The present invention relates to a light-emitting diode, and more particularly to a package structure of a light-emitting diode that avoids light-transmitting interference.
已知,目前電視牆上所使用的發光二極體10a(如圖1所示),其上具有一基板11a,該基板11a上具有複數電極層12a,該基板11a的底面或側面具有複數個焊墊13a。將三原色(RGB)發光晶片2a電性連結於該些電極層12a上,在於該基板11a的表面進行封膠形成一封裝層3a覆蓋該些三原色發光晶片2a。It is known that a light-emitting diode 10a (shown in FIG. 1) currently used on a television wall has a substrate 11a thereon, and the substrate 11a has a plurality of electrode layers 12a, and the bottom surface or the side surface of the substrate 11a has a plurality of Solder pad 13a. The three primary color (RGB) light-emitting chips 2a are electrically connected to the electrode layers 12a, and the surface of the substrate 11a is sealed to form an encapsulation layer 3a covering the three primary color light-emitting wafers 2a.
在該發光二極體10a封裝完成後,避免距離相近的兩顆三原色發光晶片產生透光干擾(crosstalk),利用切割技術在封裝層3a的表面進行切割,使該封裝層3a的表面上形成有一呈十字形的溝槽31a。此溝槽31a可以將封裝層3a表面切割成數個區塊,避免透光干擾產生。在人眼視覺上觀看兩顆三原色發光晶片3a時,使發光二極體所產生的光源不會產生相互干擾問題。After the LEDs 10a are packaged, the two primary color light-emitting wafers having similar distances are prevented from causing crosstalk, and the surface of the encapsulation layer 3a is cut by a cutting technique to form a surface of the encapsulation layer 3a. A cross-shaped groove 31a. The trench 31a can cut the surface of the encapsulation layer 3a into a plurality of blocks to avoid light transmission interference. When the two primary color light-emitting chips 3a are viewed in the human eye, the light source generated by the light-emitting diodes does not cause mutual interference.
雖然,在發光二極體10a的封裝層3a表面上切割溝槽31a可以避免透光干擾,但是此種的結構設計上會使製作上及光源相互干擾效果不盡理想。Although the groove 31a is cut on the surface of the encapsulation layer 3a of the light-emitting diode 10a to avoid light transmission interference, such a structural design may cause an undesirable effect of mutual interference between the fabrication and the light source.
因此,本創作之主要目的,在於提供一種新穎的技術,在發光二極體的封裝層表面上印刷或塗佈有遮蔽光源射出的結構,能有效遮蔽距離相近的兩顆發光二極體的透光干擾問題,也使製作上更佳容易 。 Therefore, the main purpose of the present invention is to provide a novel technology for printing or coating a surface of a light-emitting diode on a surface of an encapsulating layer of a light-emitting diode, which can effectively shield two light-emitting diodes having similar distances. Light interference problems also make production easier .
本創作之另一目的,在於本創作可以於傳統的發光二極體的封裝層表面切割後的溝槽中填入具有遮蔽光源射出的塗料,能有效遮蔽距離相近的兩顆發光二極體的透光干擾問題。Another purpose of the creation is that the creation can fill the groove after the surface of the encapsulation layer of the conventional light-emitting diode is filled with the coating material with the shielding light source, which can effectively shield the two light-emitting diodes with similar distances. Light transmission interference problem.
為了達到上述之目的,本創作提供一種發光二極體之封裝結構,包括:一載體、一發光層、一封裝層及一光干擾層。該載體表面具有複數電極層及底部具有複數個焊墊,該些電極層及該些焊墊電性連結。該發光層係由複數個發光晶片組成,該些發光晶片以電性連結於該些電極層。該封裝層設於該載體的表面上,並將該些發光晶片封裝包覆。該光干擾層設於該封裝層的表面上。In order to achieve the above object, the present invention provides a package structure of a light-emitting diode, comprising: a carrier, a light-emitting layer, an encapsulation layer and a light interference layer. The carrier has a plurality of electrode layers on the surface and a plurality of pads on the bottom, and the electrode layers and the pads are electrically connected. The luminescent layer is composed of a plurality of luminescent wafers electrically connected to the electrode layers. The encapsulation layer is disposed on a surface of the carrier and encapsulates the light emitting chip packages. The light interference layer is disposed on a surface of the encapsulation layer.
在本創作之一實施例中,該載體內部設有一導電體,以該導電體電性連結該些電極層及該些焊墊。In an embodiment of the present invention, the carrier is internally provided with an electrical conductor, and the electrical conductor electrically connects the electrode layers and the pads.
在本創作之一實施例中,該載體內部具有一控制電路晶片,以該控制電路晶片電性連結該些電極層及該些焊墊。In one embodiment of the present invention, the carrier has a control circuit chip therein, and the control circuit chip electrically connects the electrode layers and the pads.
在本創作之一實施例中,該些發光晶片為覆晶式的三原色發光二極體晶片。In one embodiment of the present invention, the illuminating wafers are flip-chip three primary color luminescent diode wafers.
在本創作之一實施例中,該些發光晶片上都具有一焊墊,使該些發光晶片電性連結於該些電極層上。In one embodiment of the present invention, the illuminating wafers have a pad on each of the illuminating wafers to electrically connect the illuminating wafers to the electrode layers.
在本創作之一實施例中,該封裝層為透光膠材。In an embodiment of the present invention, the encapsulation layer is a light transmissive glue.
在本創作之一實施例中,該透光膠材為液態環氧樹脂、固態環氧樹脂或矽膠。In one embodiment of the present invention, the light transmissive glue is a liquid epoxy resin, a solid epoxy resin or a silicone rubber.
在本創作之一實施例中,該光干擾層在該封裝層表面上呈十字形。In an embodiment of the present invention, the light interference layer has a cross shape on the surface of the encapsulation layer.
在本創作之一實施例中,該光干擾層的塗料為黑色油墨與環氧樹脂混合,或黑色油墨與矽膠混合而成。In one embodiment of the present invention, the coating of the light interference layer is a black ink mixed with an epoxy resin, or a black ink mixed with a silicone rubber.
在本創作之一實施例中,該光干擾層的厚度為20μm-30μm。In an embodiment of the present invention, the light interference layer has a thickness of 20 μm to 30 μm.
為了達到上述之目的,本創作另提供一種發光二極體之封裝結構,包括:一載體、一發光層、一封裝層及一光干擾層。該載體表面具有複數電極層及底部具有複數個焊墊,該些電極層及該些焊墊電性連結。該發光層係由複數個發光晶片組成,該些發光晶片以電性連結於該些電極層。該封裝層設於該載體的表面上,並將該些發光晶片封裝包覆,其上表面具有一溝槽。該光干擾層設於該封裝層的表面及溝槽中。In order to achieve the above object, the present invention further provides a package structure of a light-emitting diode, comprising: a carrier, a light-emitting layer, an encapsulation layer and a light interference layer. The carrier has a plurality of electrode layers on the surface and a plurality of pads on the bottom, and the electrode layers and the pads are electrically connected. The luminescent layer is composed of a plurality of luminescent wafers electrically connected to the electrode layers. The encapsulation layer is disposed on the surface of the carrier, and encapsulates the light-emitting chip packages, and has a trench on the upper surface thereof. The light interference layer is disposed on a surface of the encapsulation layer and in the trench.
在本創作之一實施例中,該載體內部設有一導電體,以該導電體電性連結該些電極層及該些焊墊。In an embodiment of the present invention, the carrier is internally provided with an electrical conductor, and the electrical conductor electrically connects the electrode layers and the pads.
在本創作之一實施例中,該載體內部具有一控制電路晶片,以該控制電路晶片電性連結該些電極層及該些焊墊。In one embodiment of the present invention, the carrier has a control circuit chip therein, and the control circuit chip electrically connects the electrode layers and the pads.
在本創作之一實施例中,該些發光晶片為覆晶式的三原色發光二極體晶片。In one embodiment of the present invention, the illuminating wafers are flip-chip three primary color luminescent diode wafers.
在本創作之一實施例中,該些發光晶片上都具有一焊墊,使該些發光晶片電性連結於該些電極層上。In one embodiment of the present invention, the illuminating wafers have a pad on each of the illuminating wafers to electrically connect the illuminating wafers to the electrode layers.
在本創作之一實施例中,該封裝層為透光膠材。In an embodiment of the present invention, the encapsulation layer is a light transmissive glue.
在本創作之一實施例中,該透光膠材為液態環氧樹脂、固態環氧樹脂或矽膠。In one embodiment of the present invention, the light transmissive glue is a liquid epoxy resin, a solid epoxy resin or a silicone rubber.
在本創作之一實施例中,該光干擾層在該封裝層的表面上呈十字形 ,斷面為T形。 In an embodiment of the present invention, the light interference layer has a cross shape on a surface of the encapsulation layer The section is T-shaped.
在本創作之一實施例中,該光干擾層的塗料為黑色油墨與環氧樹脂混合,或黑色油墨與矽膠混合而成。In one embodiment of the present invention, the coating of the light interference layer is a black ink mixed with an epoxy resin, or a black ink mixed with a silicone rubber.
在本創作之一實施例中,該光干擾層的厚度為20μm-30μm。In an embodiment of the present invention, the light interference layer has a thickness of 20 μm to 30 μm.
在本創作之一實施例中,該溝槽為十字形,且寬度為100μm。In one embodiment of the present creation, the groove is cruciform and has a width of 100 μm.
茲有關本創作之技術內容及詳細說明,現配合圖式說明如下:The technical content and detailed description of this creation are as follows:
請參閱圖2-4,係本創作之第一實施例的發光二極體之封裝結構的外觀立體及圖2的發光二極體的上視與側視示意圖。如圖所示:本創作之發光二極體10之封裝結構,包含有﹕一載體1、一發光層2、一封裝層3及一光干擾層4。Please refer to FIG. 2-4 , which are schematic diagrams of the appearance of the package structure of the light-emitting diode of the first embodiment of the present invention and the top and side views of the light-emitting diode of FIG. 2 . As shown in the figure, the package structure of the light-emitting diode 10 of the present invention comprises: a carrier 1, a light-emitting layer 2, an encapsulation layer 3, and a light interference layer 4.
該載體1,其上表面具有複數個電極層11,該載體11的底部具有複數個焊墊12,該些電極層11及該些焊墊12透過隱藏於該載體1內部的導電體(圖中未示)電性連結。該些焊墊12係以供該載體1電性連結於搭配使用裝置的主機板(圖中未示)上。在本圖式中,該載體1內部可設有一控制電路晶片(圖中未示),該控制電路晶片與該些電極層11及該些焊墊12電性連結。The carrier 1 has a plurality of electrode layers 11 on its upper surface, and the bottom of the carrier 11 has a plurality of pads 12, and the electrode layers 11 and the pads 12 pass through electrical conductors hidden inside the carrier 1 (in the figure) Not shown) Electrical connection. The pads 12 are electrically connected to the carrier 1 (not shown) of the matching device. In the present embodiment, a control circuit chip (not shown) may be disposed in the carrier 1 , and the control circuit chip is electrically connected to the electrode layers 11 and the pads 12 .
該發光層2,係由複數個發光晶片21組成。該些發光晶片21以電性連結於該些電極層11。在本圖式中,該些發光晶片21為覆晶式的三原色(RGB)發光二極體晶片,於該些三原色發光晶片上都具有一焊墊(圖中未示),使該三原色發光晶片得以電性連結於該些電極層11上。The luminescent layer 2 is composed of a plurality of luminescent wafers 21. The light-emitting chips 21 are electrically connected to the electrode layers 11 . In the present embodiment, the illuminating wafers 21 are flip-chip three-primary color (RGB) illuminating diode chips, and each of the three primary color illuminating wafers has a pad (not shown) for the three primary color illuminating wafers. It is electrically connected to the electrode layers 11.
該封裝層3,係設於該載體1的表面上,並將該些發光晶片21封裝包覆。在本圖式中,該封裝層3為透光膠材,該透光膠材為液態環氧樹脂(Epoxy)、固態環氧樹脂或矽膠。The encapsulation layer 3 is disposed on the surface of the carrier 1 and encapsulates the luminescent wafers 21 . In the present embodiment, the encapsulating layer 3 is a light transmissive rubber material, which is a liquid epoxy resin (Epoxy), a solid epoxy resin or a silicone rubber.
該光干擾層4,係透過印刷或塗佈技術將塗料印刷或塗佈於該封裝層3的表面上呈十字形,由圖3的上視圖中可以看出該光干擾層4將該些發光晶片21區隔,使該光干擾層4避免距離相近的兩顆發光晶片21產生的透光干擾(crosstalk)。該塗料為黑色油墨(漆)與環氧樹脂(Epoxy)混合,或黑色油墨(漆)與矽膠混合而成。在本圖式中,該光干擾層4的厚度為20μm-30μm。The light interference layer 4 is printed or coated on the surface of the encapsulation layer 3 by a printing or coating technique. The light interference layer 4 can be seen in the upper view of FIG. The wafer 21 is spaced apart so that the light interference layer 4 avoids crosstalk caused by two adjacent light emitting chips 21. The coating is a mixture of black ink (lacquer) and epoxy resin (Epoxy), or black ink (lacquer) and silicone. In the present drawing, the light interference layer 4 has a thickness of 20 μm to 30 μm.
藉由上述光干擾層4使該封裝層3的表面分開成兩個以上的區域,以該光干擾層4遮蔽兩顆發光晶片21之間的光源射出,以達人眼視覺上兩顆發光晶片21不會產生透光干擾。The surface of the encapsulation layer 3 is separated into two or more regions by the light interference layer 4, and the light interference layer 4 shields the light source between the two illuminating wafers 21 to reach the two illuminating wafers 21 in the human eye. No light transmission interference will occur.
請參閱圖5,係本創作之第二實施例的發光二極體之封裝結構示意圖。如圖所示﹕本創作之第二實施例與第一實施例大致相同,所不同處係在於發光二極體10封裝完成後,利用切割技術於該封裝層3的表面進行切割,使該封裝層3的表面形成有一十字形的溝槽31。在本圖式中,該溝槽31寬度為100μm。Please refer to FIG. 5 , which is a schematic diagram of a package structure of a light emitting diode according to a second embodiment of the present invention. As shown in the figure, the second embodiment of the present invention is substantially the same as the first embodiment. The difference is that after the LED diode 10 is packaged, the surface of the encapsulation layer 3 is cut by a cutting technique to make the package. The surface of the layer 3 is formed with a cross-shaped groove 31. In the figure, the groove 31 has a width of 100 μm.
在溝槽31切割完成後,再利用印刷或塗布技術將塗料塗佈於該封裝層3的溝槽31及封裝層3的表面上形成一十字形的光干擾層4,該光干擾層4的斷面也呈一T形,藉由上述光干擾層4使該封裝層3的表面分開成兩個以上的區域,以該光干擾層4遮蔽兩顆發光晶片21之間的光源射出,以達人眼視覺上兩顆發光晶片21不會產生透光干擾。After the trench 31 is cut, the coating is applied to the surface of the trench 31 and the encapsulation layer 3 of the encapsulation layer 3 by a printing or coating technique to form a cross-shaped optical interference layer 4, which is interfering with the layer 4 The cross section is also in a T shape, and the surface of the encapsulation layer 3 is separated into two or more regions by the light interference layer 4, and the light interference layer 4 shields the light source between the two illuminating wafers 21 to reach the person. The two illuminating wafers 21 do not cause light transmission interference in the eye.
惟以上所述僅為本創作之較佳實施例,非意欲侷限本創作的專利保護範圍,故舉凡運用本創作說明書或圖式內容所為的等效變化,均同理皆包含於本創作的權利保護範圍內,合予陳明。However, the above description is only a preferred embodiment of the present invention, and it is not intended to limit the scope of patent protection of the present creation. Therefore, the equivalent changes made by using the present specification or the content of the schema are all included in the right of the creation. Within the scope of protection, it is given to Chen Ming.
習知Conventional knowledge
10a‧‧‧發光二極體10a‧‧‧Lighting diode
11a‧‧‧基板11a‧‧‧Substrate
12a‧‧‧電極層12a‧‧‧electrode layer
13a‧‧‧焊墊13a‧‧‧ solder pads
2a‧‧‧三原色發光晶片2a‧‧‧Three primary color light-emitting wafers
3a‧‧‧封裝層3a‧‧‧Encapsulation layer
31a‧‧‧溝漕31a‧‧‧Gully
本創作This creation
10‧‧‧發光二極體10‧‧‧Lighting diode
1‧‧‧載體1‧‧‧ Carrier
11‧‧‧電極層11‧‧‧Electrode layer
12‧‧‧焊墊12‧‧‧ solder pads
2‧‧‧發光層2‧‧‧Lighting layer
21‧‧‧發光晶片21‧‧‧Lighting chip
3‧‧‧封裝層3‧‧‧Encapsulation layer
31‧‧‧溝槽31‧‧‧ trench
4‧‧‧光干擾層4‧‧‧Light interference layer
圖1,傳統發光二極體的封裝結構示意圖;FIG. 1 is a schematic view showing a package structure of a conventional light emitting diode;
圖2,係本創作之第一實施例的發光二極體之封裝結構的外觀立體示意圖;2 is a perspective view showing the appearance of a package structure of a light-emitting diode according to a first embodiment of the present invention;
圖3,係圖2的發光二極體的上視示意圖;3 is a top plan view of the light emitting diode of FIG. 2;
圖4,係圖2的發光二極體的側視示意圖;Figure 4 is a side elevational view of the light emitting diode of Figure 2;
圖5,係本創作之第二實施例的發光二極體之封裝結構示意圖。FIG. 5 is a schematic view showing a package structure of a light-emitting diode according to a second embodiment of the present invention.
Claims (21)
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112736072A (en) * | 2019-10-28 | 2021-04-30 | 光宝光电(常州)有限公司 | Light emitting module and manufacturing method thereof |
CN113540308A (en) * | 2020-04-22 | 2021-10-22 | 东莞市中麒光电技术有限公司 | Substrate structure of LED display module and manufacturing method |
-
2019
- 2019-03-13 TW TW108202992U patent/TWM581770U/en unknown
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN112736072A (en) * | 2019-10-28 | 2021-04-30 | 光宝光电(常州)有限公司 | Light emitting module and manufacturing method thereof |
US11437355B2 (en) | 2019-10-28 | 2022-09-06 | Lite-On Opto Technology (Changzhou) Co., Ltd. | Light-emitting package structure and manufacturing method thereof |
TWI782297B (en) * | 2019-10-28 | 2022-11-01 | 大陸商光寶光電(常州)有限公司 | Light-emitting package structure and manufacturing method thereof |
CN112736072B (en) * | 2019-10-28 | 2024-02-09 | 光宝光电(常州)有限公司 | Light emitting module and manufacturing method thereof |
CN113540308A (en) * | 2020-04-22 | 2021-10-22 | 东莞市中麒光电技术有限公司 | Substrate structure of LED display module and manufacturing method |
CN113540308B (en) * | 2020-04-22 | 2023-06-09 | 东莞市中麒光电技术有限公司 | Substrate structure of LED display module and manufacturing method |
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