TWM571619U - Synchronous rectifier controller for off-line power converters - Google Patents

Synchronous rectifier controller for off-line power converters

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TWM571619U
TWM571619U TWM571619U TW M571619 U TWM571619 U TW M571619U TW M571619 U TWM571619 U TW M571619U
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gate
coupled
transistor
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一種同步整流器(SR)控制器包括:一控制器,其具有經調適以耦接至一SR電晶體之一汲極的一輸入、及用於對其回應而提供一驅動信號的一輸出;一閘極驅動器,其具有耦接至該控制器之該輸出的一輸入、及經調適以耦接至該SR電晶體之一閘極的一輸出,用於提供一閘極信號至該SR電晶體之該閘極;一第一電晶體,其具有耦接至該閘極終端之一汲極、一閘極、及耦接至接地的一源極;以及一保護電路,其具有耦接至該汲極終端的一輸入、及耦接至該第一電晶體之該閘極的一輸出。該保護電路回應於在該汲極終端上之一電壓超過一第一電壓,而在該第一電晶體之該閘極上提供一電壓,該電壓大於該第一電晶體之一導通電壓且小於該第一電晶體之一過電壓。A synchronous rectifier (SR) controller includes: a controller having an input adapted to be coupled to one of the drains of an SR transistor, and an output for providing a drive signal in response thereto; a gate driver having an input coupled to the output of the controller and an output adapted to be coupled to a gate of the SR transistor for providing a gate signal to the SR transistor a first transistor having a drain coupled to one of the gate terminals, a gate, and a source coupled to the ground; and a protection circuit coupled to the gate An input of the drain terminal and an output coupled to the gate of the first transistor. The protection circuit is responsive to a voltage on the drain terminal exceeding a first voltage, and providing a voltage on the gate of the first transistor, the voltage being greater than a turn-on voltage of the first transistor and less than the One of the first transistors is overvoltage.

Description

用於離線電力轉換器之同步整流器控制器Synchronous rectifier controller for off-line power converters

本揭露大致上係關於電力轉換電路,且更具體地係關於用於離線電力轉換器之同步整流器控制器。The present disclosure relates generally to power conversion circuits, and more particularly to synchronous rectifier controllers for off-line power converters.

切換模式電力供應器能用於藉由切換通過儲能元件(諸如,變壓器)的電流而從交流(AC)電壓產生直流(DC)電壓。控制切換的作用時間循環(duty cycle)以將輸出電壓調節至所欲位準。返馳式轉換器係AC轉DC電壓應用中常見類型的切換模式電力供應器。返馳式轉換器係基於交替地在磁芯中建立通量及將能量轉移至輸出的返馳式變壓器。當電流經切換通過一次繞組時,該變壓器上的一次電流增加,將能量儲存在該變壓器內。當開關斷開時,變壓器中的一次電流下降,在二次繞組上感應電壓。該二次繞組將電流供應至負載。控制器改變與該一次繞組串聯之一次開關的導通及關斷時間以將該輸出電壓調節至所欲位準。The switched mode power supply can be used to generate a direct current (DC) voltage from an alternating current (AC) voltage by switching current through an energy storage element, such as a transformer. The switching duty cycle is controlled to adjust the output voltage to the desired level. The flyback converter is a common type of switched mode power supply for AC to DC voltage applications. The flyback converter is based on a flyback transformer that alternately builds flux in the core and transfers energy to the output. When the current is switched through the primary winding, the primary current on the transformer increases, storing energy in the transformer. When the switch is turned off, the primary current in the transformer drops and a voltage is induced across the secondary winding. This secondary winding supplies current to the load. The controller changes the on and off times of the primary switch in series with the primary winding to adjust the output voltage to the desired level.

返馳式轉換器使用連接至二次繞組的整流器來防止電流反向流動通過二次繞組。整流器可呈兩種形式。被動整流器(諸如二極體)可與二次繞組串聯置放以防止反向電流流動。然而,若輸出電力供應電壓超過二極體之崩潰電壓,則二極體無法正確地防止反向電流流動。此外,二極體在導電時引起正向電壓降,而降低轉換器的效率。為了解決這些問題,經常使用名為同步整流器的另一形式整流器。同步整流器包括主動開關,通常係連同控制器而與二次繞組串聯連接的N通道金屬氧化物半導體場效電晶體(MOSFET),該控制器使得電晶體在適當時間導電。由於電晶體可被偏壓而完全開通,所以同步整流器大致上比被動整流器更高效率。The flyback converter uses a rectifier connected to the secondary winding to prevent reverse current flow through the secondary winding. The rectifier can be in two forms. A passive rectifier, such as a diode, can be placed in series with the secondary winding to prevent reverse current flow. However, if the output power supply voltage exceeds the breakdown voltage of the diode, the diode cannot properly prevent the reverse current from flowing. In addition, the diode causes a forward voltage drop when conducting, and reduces the efficiency of the converter. To solve these problems, another form of rectifier called a synchronous rectifier is often used. The synchronous rectifier includes an active switch, typically an N-channel metal oxide semiconductor field effect transistor (MOSFET) connected in series with the secondary winding along with the controller, which causes the transistor to conduct at the appropriate time. Since the transistor can be fully turned on by biasing, the synchronous rectifier is substantially more efficient than the passive rectifier.

然而,由於汲極與閘極之間的電容耦接及閘極與源極之間的電容耦接,當同步整流器(SR)電晶體之汲極電壓由於通電時切換而迅速上升時,SR電晶體之閘極電壓亦會在SR控制器通電之前迅速上升。在通電時,控制器無法將閘極電壓保持低,此係因為控制器尚未通電。若SR電晶體之閘極上的電壓上升太多,則會造成SR電晶體變成導電,而在二次側上產生非所欲貫穿(shoot-through)電流,且造成潛在損壞系統。However, due to the capacitive coupling between the drain and the gate and the capacitive coupling between the gate and the source, when the gate voltage of the synchronous rectifier (SR) transistor is rapidly increased due to switching when energized, the SR The gate voltage of the crystal also rises rapidly before the SR controller is energized. The controller is unable to keep the gate voltage low when power is applied because the controller is not yet powered. If the voltage on the gate of the SR transistor rises too much, it will cause the SR transistor to become conductive, creating an undesired shoot-through current on the secondary side and causing potential damage to the system.

在一實施例中,一種用於控制具有一汲極、一閘極及一源極的一同步整流器電晶體之同步整流器控制器,其包含:一控制器,其具有經調適以耦接至該同步整流器電晶體之該汲極的一輸入、及用於對其回應而提供一驅動信號的一輸出;一閘極驅動器,其具有耦接至該控制器之該輸出的一輸入、及經調適以耦接至該同步整流器電晶體之該閘極的一輸出,用於提供一閘極信號至該同步整流器電晶體之該閘極;一第一電晶體,其具有耦接至該閘極終端的一汲極、一閘極、及耦接至接地之一源極;及一保護電路,其具有耦接至該汲極終端的一輸入、及耦接至該第一電晶體之該閘極的一輸出,其中該保護電路回應於在該汲極終端上之一電壓超過一第一電壓,而在該第一電晶體之該閘極上提供一電壓,該電壓大於該第一電晶體之一導通電壓且小於該第一電晶體之一過電壓。In one embodiment, a synchronous rectifier controller for controlling a synchronous rectifier transistor having a drain, a gate, and a source includes: a controller having an adaptation to couple to the An input of the drain of the synchronous rectifier transistor and an output for providing a drive signal in response thereto; a gate driver having an input coupled to the output of the controller, and adapted An output coupled to the gate of the synchronous rectifier transistor for providing a gate signal to the gate of the synchronous rectifier transistor; a first transistor having a coupling to the gate terminal a drain, a gate, and a source coupled to the ground; and a protection circuit having an input coupled to the drain terminal and coupled to the gate of the first transistor An output, wherein the protection circuit is responsive to a voltage on the drain terminal exceeding a first voltage, and providing a voltage on the gate of the first transistor, the voltage being greater than one of the first transistors Turn-on voltage and less than the first transistor An over-voltage.

在另一實施例中,一種離線電力轉換器,其包含:一變壓器,其具有:一一次繞組,其具有用於接收一輸入電壓的一第一端部、及一第二端部;及一二次繞組,其具有用於提供一輸出電壓的一第一端部、及一第二端部;一功率電晶體,其具有耦接至該一次繞組之該第二端部的一汲極、一閘極、及耦接至一一次接地終端的一源極;一主控制器,其具有用於接收一回授信號的一輸入、及耦接至該功率電晶體之該閘極的一輸出;一同步整流器電晶體,其具有耦接至該二次繞組之該第二端部的一汲極、一閘極、及耦接至一二次接地終端之一源極;及一同步整流控制器,其具有:一電力供應終端,其耦接至該二次繞組之該第一端部,用於接收一電力供應電壓;一汲極終端,其耦接至該二次繞組之該第二端部;一接地終端,其耦接至該二次接地終端;及一閘極終端,其耦接至該同步整流器電晶體之該閘極,其中該同步整流器控制器包括電路系統,在藉由在該汲極終端及該二次接地終端上之一電壓供電而不是藉由該電力供應電壓供電之通電後,該電路系統放電在該同步整流器電晶體之該閘極上之一電壓。In another embodiment, an off-line power converter includes: a transformer having: a primary winding having a first end for receiving an input voltage, and a second end; and a secondary winding having a first end for providing an output voltage and a second end; a power transistor having a drain coupled to the second end of the primary winding a gate, and a source coupled to the grounding terminal; a main controller having an input for receiving a feedback signal and coupled to the gate of the power transistor An output; a synchronous rectifier transistor having a drain coupled to the second end of the secondary winding, a gate, and a source coupled to a secondary ground terminal; and a synchronization a rectifier controller having: a power supply terminal coupled to the first end of the secondary winding for receiving a power supply voltage; and a drain terminal coupled to the secondary winding a second end portion; a grounding terminal coupled to the secondary grounding terminal; and a gate An end coupled to the gate of the synchronous rectifier transistor, wherein the synchronous rectifier controller includes circuitry that is powered by a voltage on the drain terminal and the secondary ground terminal instead of After energization of the power supply voltage supply, the circuitry discharges a voltage on the gate of the synchronous rectifier transistor.

圖1以部分方塊圖及部分示意圖繪示一種具有二次側同步整流的離線電力轉換器100。離線電力轉換器100大致上包括一變壓器110、一功率電晶體120、一感測電阻器130、一輔助電路140、一主控制器150、一輸出電容器160、一同步整流器(SR)電晶體170、一二極體172、一SR控制器180及一負載190。FIG. 1 is a partial block diagram and a partial schematic diagram showing an off-line power converter 100 with secondary side synchronous rectification. The offline power converter 100 generally includes a transformer 110, a power transistor 120, a sensing resistor 130, an auxiliary circuit 140, a main controller 150, an output capacitor 160, and a synchronous rectifier (SR) transistor 170. A diode 172, an SR controller 180, and a load 190.

在一次側,變壓器110具有一一次繞組112、一二次繞組114、及一輔助繞組116。一次繞組112具有用於接收標記為「V IN」之輸入電壓的一第一端部、一第二端部及標記為「NP」之數個匝。二次繞組114具有用於提供標記為「V O」之輸出電壓的一第一端部、一第二端部、及標記為「NS」之數個匝。輔助繞組116具有一第一端部、及連接至一次接地之一第二端部、及標記為「NA」之數個匝。功率電晶體120係高功率N通道功率金屬氧化物半導體場效電晶體(MOSFET),其具有連接至一次繞組112之第二端部的一汲極、一閘極及一源極。電流感測電阻器130具有連接至功率電晶體120之源極的一第一終端、及連接至一次接地的一第二終端。輔助電路140大致上包括電阻器142及144、一二極體146及一電容器148。電阻器142具有連接至輔助繞組116之第一端部的一第一終端、及一第二終端。電阻器144具有連接至電阻器142之第二終端的一第一終端、及連接至一次接地的一第二終端。二極體146具有連接至輔助繞組116之第一端部的一陽極、及一陰極。電容器148具有連接至二極體146之陰極的一第一終端、及連接至一次接地的一第二終端。主控制器150具有:一第一電力供應終端,其連接至二極體146之陰極;一接地終端(標記為「GND」),其連接至一次接地;一第一輸入終端(標記為「VS」),其連接至電阻器142之第二終端;一第二輸入終端(標記為「CS」),其連接至感測電阻器130之第一終端;及一輸出終端(標記為「SW」),其連接至功率電晶體120之閘極。 On the primary side, the transformer 110 has a primary winding 112, a secondary winding 114, and an auxiliary winding 116. The primary winding 112 has a first end, a second end, and a plurality of turns labeled "NP" for receiving an input voltage labeled "V IN ". The secondary winding 114 has a first end, a second end, and a plurality of turns labeled "NS" for providing an output voltage labeled "V O ". The auxiliary winding 116 has a first end, a second end connected to one ground, and a plurality of turns labeled "NA." The power transistor 120 is a high power N-channel power metal oxide semiconductor field effect transistor (MOSFET) having a drain, a gate, and a source connected to a second end of the primary winding 112. The current sensing resistor 130 has a first terminal connected to the source of the power transistor 120 and a second terminal connected to the ground once. The auxiliary circuit 140 generally includes resistors 142 and 144, a diode 146, and a capacitor 148. The resistor 142 has a first terminal connected to the first end of the auxiliary winding 116, and a second terminal. The resistor 144 has a first terminal connected to the second terminal of the resistor 142 and a second terminal connected to the primary ground. The diode 146 has an anode connected to the first end of the auxiliary winding 116, and a cathode. The capacitor 148 has a first terminal connected to the cathode of the diode 146 and a second terminal connected to the primary ground. The main controller 150 has a first power supply terminal connected to the cathode of the diode 146, a ground terminal (labeled "GND") connected to the ground once; and a first input terminal (labeled "VS"") is connected to the second terminal of the resistor 142; a second input terminal (labeled "CS") connected to the first terminal of the sense resistor 130; and an output terminal (labeled "SW") ), which is connected to the gate of the power transistor 120.

在二次側上,輸出電容器160具有連接至二次繞組114之第一端部的一第一終端、及連接至二次接地的一第二端部。SR電晶體170係N通道功率MOSFET,其具有連接至二次繞組114之第二端部的一汲極、一閘極、及連接至二次接地的一源極。二極體172具有連接至SR電晶體170之源極的一陽極、及連接至SR電晶體170之汲極的一陰極。SR控制器180具有:一第一電力供應終端(相似地標記為「VCC」),其連接至二次繞組114之第一端部;一接地終端(相似地標記為「GND」),其連接至二次接地;一輸入終端(標記為「DRAIN」),其SR電晶體170之汲極;及一輸出終端(標記為「GATE」),其連接至SR電晶體170之閘極。電阻器190具有連接至二次繞組114之第一端部的一第一終端、及連接至二次接地的一第二終端。On the secondary side, the output capacitor 160 has a first terminal connected to the first end of the secondary winding 114 and a second end connected to the secondary ground. The SR transistor 170 is an N-channel power MOSFET having a drain connected to a second end of the secondary winding 114, a gate, and a source connected to the secondary ground. The diode 172 has an anode connected to the source of the SR transistor 170 and a cathode connected to the drain of the SR transistor 170. The SR controller 180 has a first power supply terminal (similarly labeled "VCC") connected to the first end of the secondary winding 114; a ground terminal (similarly labeled "GND") connected To the second ground; an input terminal (labeled "DRAIN"), the drain of the SR transistor 170; and an output terminal (labeled "GATE") connected to the gate of the SR transistor 170. The resistor 190 has a first terminal connected to the first end of the secondary winding 114 and a second terminal connected to the secondary ground.

在操作中,離線功率轉換器100依返馳式組態使用變壓器110以轉換輸入電壓V IN成所欲輸出電壓V O。感測電阻器130亦在其第一終端上形成一電壓(該電壓與流動通過功率電晶體120之電流量成比例),並且提供此電壓至主控制器150之CS輸入終端。輔助電路140減小輔助繞組116上的電壓,其中一電阻分壓器由電阻器142及144形成,以提供感測電壓VS作為輸出電壓V O之量度。輔助電路140亦整流且濾波輔助繞組116上的電壓,以形成用於主控制器150的電力供應電壓V CC。主控制器150使用習知脈衝寬度調變控制技術,基於VS及CS而改變功率電晶體120之導通時間,以調節V O至所欲位準。 In operation, the off-line power converter 100 uses the transformer 110 in a flyback configuration to convert the input voltage V IN to the desired output voltage V O . The sense resistor 130 also forms a voltage on its first terminal that is proportional to the amount of current flowing through the power transistor 120 and provides this voltage to the CS input terminal of the main controller 150. Reducing the voltage across the auxiliary winding 140 116 the auxiliary circuit, wherein a resistor divider formed by resistors 142 and 144, to provide a sensing voltage VS as a measure of the output voltage V O of. The auxiliary circuit 140 also rectifies and filters the voltage on the auxiliary winding 116 to form a power supply voltage V CC for the main controller 150. The main controller 150 uses a conventional pulse width modulation control, based on VS and CS changes power transistor 120 conduction time, the V O to adjust to a desired level.

在二次側,輸出電容器160用作儲存能量且平滑V O之波動的一輸出電容器。SR控制器180控制SR電晶體170之傳導,以在一次繞組112中形成電流時使該SR電晶體處於非導電,並且在返馳週期期間使該SR電晶體處於完全導電。二極體172允許電流從二次接地流動通過二次繞組114,以將在二次繞組114之第二端部處之電壓箝位在低於二次接地的一個二極體電壓降。 On the secondary side, the output capacitor 160 acts as an output capacitor that stores energy and smoothes the fluctuation of V O . The SR controller 180 controls the conduction of the SR transistor 170 to cause the SR transistor to be non-conductive when a current is formed in the primary winding 112 and to cause the SR transistor to be fully conductive during the flyback period. The diode 172 allows current to flow from the secondary ground through the secondary winding 114 to clamp the voltage at the second end of the secondary winding 114 to a diode drop below the secondary ground.

重設後,主控制器150開始使電流切換通過一次繞組112,但SR控制器180不操作,直到V O充分上升。然而,在SR控制器180操作之前開始的切換事件,二次繞組114之第二端部上的電壓(且因此,在SR電晶體170之汲極上的電壓)迅速上升。此迅速切換透過與SR電晶體170相關聯之寄生電容來使SR電晶體170之閘極上的電壓升壓。一個名為「Cgd」之寄生電容存在於SR電晶體170之汲極與閘極之間。另一名為「Cgs」之寄生電容存在於SR電晶體170之閘極及源極之間。在SR控制器180能夠驅動SR電晶體170之閘極之前通電時,Cgd及Cgs電晶體之串聯組合產生分壓器。若SR電晶體170之汲極上的電壓過高,則由尖波誘發之閘極至源極電壓足以使SR電晶體170導電,從而使SR電晶體170完全導電,且造成電路受到貫穿電流而損壞。然而,若閘極終端上的電壓尖波較小,則電壓仍然會足夠高而將SR電晶體170偏壓至次臨限值範圍內,並且使該SR電晶體部分導電。 After reset, the main controller 150 starts to switch the current through the primary winding 112, the controller 180 does not operate but the SR, V O until sufficiently increased. However, at the switching event that begins before the SR controller 180 operates, the voltage on the second end of the secondary winding 114 (and therefore the voltage on the drain of the SR transistor 170) rises rapidly. This rapid switching boosts the voltage across the gate of the SR transistor 170 through the parasitic capacitance associated with the SR transistor 170. A parasitic capacitance named "Cgd" exists between the drain and the gate of the SR transistor 170. Another parasitic capacitance named "Cgs" exists between the gate and source of the SR transistor 170. The series combination of Cgd and Cgs transistors produces a voltage divider when the SR controller 180 is energized prior to being able to drive the gate of the SR transistor 170. If the voltage on the drain of the SR transistor 170 is too high, the gate-to-source voltage induced by the spike is sufficient to make the SR transistor 170 conductive, thereby making the SR transistor 170 completely conductive and causing the circuit to be damaged by the through current. . However, if the voltage spike on the gate terminal is small, the voltage will still be high enough to bias the SR transistor 170 to the secondary threshold and make the SR transistor partially conductive.

圖2以部分方塊圖及部分示意圖形式繪示根據圖1之SR控制器180之第一實施例之SR控制器200。SR控制器200包括被標記為「DRAIN」之一汲極終端201、標記為「GATE」之一閘極終端202、一控制器210、一閘極驅動器220、一電晶體230及一保護電路240。控制器210具有連接至V CC的一電力供應終端、連接至二次接地的一接地終端、連接至汲極終端201的一輸入終端、及用於提供一驅動信號的一輸出終端。閘極驅動器220具有連接至V CC的一第一電力供應終端、連接至二次接地的一第二電力供應終端、連接至控制器210之輸出的一輸入以用於接收驅動信號、及連接至閘極終端202的一輸出。 2 shows the SR controller 200 according to the first embodiment of the SR controller 180 of FIG. 1 in partial block diagram and partial schematic diagram. The SR controller 200 includes a gate terminal 201 labeled "DRAIN", a gate terminal 202 labeled "GATE", a controller 210, a gate driver 220, a transistor 230, and a protection circuit 240. . The controller 210 has a power supply terminal connected to the V CC , a ground terminal connected to the secondary ground, an input terminal connected to the drain terminal 201, and an output terminal for providing a drive signal. The gate driver 220 has a first power supply terminal connected to the V CC , a second power supply terminal connected to the secondary ground, an input connected to the output of the controller 210 for receiving the drive signal, and connected to An output of the gate terminal 202.

保護電路240包括一電晶體241、一齊納二極體242及一偏壓電路243。電晶體241係高電壓N通道MOSFET,其具有連接至DRAIN終端201的一汲極、一閘極、及連接至電晶體230之閘極的一源極。齊納二極體242具有連接至電晶體241之源極的一陰極、及連接至二次接地的一陽極。偏壓電路243包括一電阻器244及一齊納二極體245。電阻器244具有連接至DRAIN終端201的一第一終端、及連接至電晶體241之閘極的一第二終端。齊納二極體245具有連接至電阻器244之第二終端的一陰極、及連接至二次接地的一陽極。The protection circuit 240 includes a transistor 241, a Zener diode 242, and a bias circuit 243. The transistor 241 is a high voltage N-channel MOSFET having a drain connected to the DRAIN terminal 201, a gate, and a source connected to the gate of the transistor 230. Zener diode 242 has a cathode connected to the source of transistor 241 and an anode connected to the secondary ground. The bias circuit 243 includes a resistor 244 and a Zener diode 245. Resistor 244 has a first terminal connected to DRAIN terminal 201 and a second terminal connected to the gate of transistor 241. Zener diode 245 has a cathode connected to a second terminal of resistor 244 and an anode connected to a secondary ground.

在操作中,控制器210提供驅動信號至閘極驅動器220之輸入,該閘極驅動器220在閘極終端202上提供一對應信號。當SR控制器200偵測到DRAIN終端上的足夠高電壓時,保護電路240將電晶體230偏壓成導電。電晶體241操作為源極隨耦器,其中在電晶體241之源極上的電壓遵循其閘極上的電壓減去一臨限電壓。當電晶體230之閘極上的電壓接近一過電壓位準時,齊納二極體242變成導電,而有效率將電晶體230之閘極上的電壓箝位在低於一有害電壓位準。此外,齊納二極體245亦變成導電,而有效率將電晶體241之閘極上的電壓箝位在低於一有害電壓位準。In operation, controller 210 provides a drive signal to the input of gate driver 220, which provides a corresponding signal on gate terminal 202. Protection circuit 240 biases transistor 230 to conduct electricity when SR controller 200 detects a sufficiently high voltage on the DRAIN terminal. The transistor 241 operates as a source follower, wherein the voltage at the source of the transistor 241 follows the voltage across its gate minus a threshold voltage. When the voltage across the gate of transistor 230 approaches an overvoltage level, Zener diode 242 becomes conductive and effectively clamps the voltage across the gate of transistor 230 below a harmful voltage level. In addition, Zener diode 245 also becomes electrically conductive, and effectively clamps the voltage across the gate of transistor 241 below a harmful voltage level.

電晶體230及241係高電壓電晶體,能夠經受高於將破壞及損壞習知低電壓電晶體之電壓的閘極至源極電壓。Transistors 230 and 241 are high voltage transistors capable of withstanding gate-to-source voltages above voltages that would damage and damage conventional low voltage transistors.

當汲極終端201處的電壓迅速上升時,電晶體241之閘極上的電壓被齊納二極體245箝位在其崩潰電壓,該崩潰電壓經選擇為高於電晶體241之臨限電壓。繼而,齊納二極體242之崩潰電壓經選擇為高於電晶體230之臨限電壓。齊納二極體245亦保護電晶體241之閘極,並且防止在其汲極電壓迅速上升時該電晶體不安全地升高而免於上文討論之相同閘極至源極電容。一旦DRAIN終端201上的電壓超過齊納二極體245之崩潰電壓,則電晶體241及230完全導電以將SR電晶體170之閘極電壓安全拉至接地。When the voltage at the drain terminal 201 rises rapidly, the voltage across the gate of the transistor 241 is clamped at its breakdown voltage by the Zener diode 245, which is selected to be higher than the threshold voltage of the transistor 241. In turn, the breakdown voltage of the Zener diode 242 is selected to be higher than the threshold voltage of the transistor 230. Zener diode 245 also protects the gate of transistor 241 and prevents the transistor from unsafely rising when its drain voltage rises rapidly from the same gate-to-source capacitance discussed above. Once the voltage on the DRAIN terminal 201 exceeds the breakdown voltage of the Zener diode 245, the transistors 241 and 230 are fully conductive to safely pull the gate voltage of the SR transistor 170 to ground.

因此,保護電路240回應於DRAIN終端201上的電壓超過第一電壓,而在電晶體230之閘極上提供電壓,該電壓大於電晶體230之導通電壓,但小於電晶體230之過電壓。保護電路240小且自供電,並且防止SR電晶體170導通,甚至防止在離線電力轉換器100之通電期間變成偏壓在其次臨限值區域中。僅使用幾個組件(兩個電晶體、兩個齊納二極體及一個電阻器)進行實作,但在通電期間防止有害操作。Therefore, the protection circuit 240 provides a voltage on the gate of the transistor 230 in response to the voltage on the DRAIN terminal 201 exceeding the first voltage, which is greater than the turn-on voltage of the transistor 230, but less than the overvoltage of the transistor 230. The protection circuit 240 is small and self-powered, and prevents the SR transistor 170 from conducting, even preventing the bias from becoming biased in the next threshold region during energization of the off-line power converter 100. Only a few components (two transistors, two Zener diodes and one resistor) are used for implementation, but harmful operation is prevented during energization.

圖3繪示用於瞭解圖2之同步整流器控制器之操作的時序圖300。在時序圖300中,水平軸代表以微秒(µsec)為單位的時間,且垂直軸代表以伏特(V)為單位之多種信號的幅度。時序圖300繪示四個所關注波形,包括表示汲極終端201上之電壓的波形310,表示電晶體241之閘極上之電壓的波形320,表示電晶體230之閘極上之電壓的波形330,及表示閘極終端202上之電壓的波形340。3 is a timing diagram 300 for understanding the operation of the synchronous rectifier controller of FIG. 2. In timing diagram 300, the horizontal axis represents time in microseconds (μsec) and the vertical axis represents the amplitude of various signals in volts (V). The timing diagram 300 depicts four waveforms of interest, including a waveform 310 representing the voltage on the drain terminal 201, a waveform 320 representing the voltage across the gate of the transistor 241, a waveform 330 representing the voltage across the gate of the transistor 230, and A waveform 340 representing the voltage across the gate terminal 202.

如時序圖300所展示,在返馳循環期間,汲極終端201上的電壓上升,並且電晶體241之閘極上的電壓亦上升直到其被鉗位在標記為「V D1」的箝位電壓。電晶體230之閘極處的電壓遵循電晶體241之閘極上的電壓減去電晶體241之臨限電壓。電晶體230之閘極處的電壓足夠大以使電晶體230完全導電,並且上升直到被齊納二極體242箝位在標記為「V D2」的鉗位電壓。由於電晶體230完全導電,所以將SR電晶體170之閘極上的電壓拉至接地且使其不導電。 As shown in timing diagram 300, during the flyback cycle, the voltage on drain terminal 201 rises and the voltage across the gate of transistor 241 also rises until it is clamped at the clamp voltage labeled "V D1 ". The voltage at the gate of transistor 230 follows the voltage on the gate of transistor 241 minus the threshold voltage of transistor 241. The voltage at the gate of transistor 230 is sufficiently large to cause transistor 230 to be fully conductive and rise until it is clamped by Zener diode 242 at a clamping voltage labeled "V D2 ". Since the transistor 230 is fully conductive, the voltage on the gate of the SR transistor 170 is pulled to ground and rendered non-conductive.

在返馳循環之後的正向循環期間,汲極終端201上的電壓迅速下降,這會由於寄生電容耦接而使SR電晶體170之閘極上的電壓下降到低於接地。SR電晶體170之閘極上的負電壓(在此實例中,係約-0.7)被電晶體230之主本體二極體及介於源極與閘極之間之寄生二極體箝位。During the forward cycle after the flyback cycle, the voltage on the drain terminal 201 drops rapidly, which causes the voltage on the gate of the SR transistor 170 to drop below ground due to parasitic capacitance coupling. The negative voltage on the gate of the SR transistor 170 (in this example, about -0.7) is clamped by the main body diode of the transistor 230 and the parasitic diode between the source and the gate.

圖4以部分方塊圖及部分示意圖形式繪示根據圖1之SR控制器180之第二實施例之SR控制器400。SR控制器400包括汲極終端201、閘極終端202、控制器210、閘極驅動器220及電晶體230,如前文圖2中所繪示。然而,SR控制器400包括一保護電路440,而非圖2之保護電路240。如圖4所展示,保護電路440實作為電壓控制電壓源(「VCVS」),其用與汲極終端201上的電壓成比例的電壓來驅動電晶體230之閘極。保護電路440可用於例如可足夠完善特徵化使得電壓控制電壓源之傳輸特性將電晶體230之閘極偏壓至大於該電晶體之導通電壓但小於該電晶體之崩潰電壓之位準的系統中。4 is a partial block diagram and a partial schematic diagram showing the SR controller 400 of the second embodiment of the SR controller 180 of FIG. The SR controller 400 includes a drain terminal 201, a gate terminal 202, a controller 210, a gate driver 220, and a transistor 230, as previously illustrated in FIG. However, the SR controller 400 includes a protection circuit 440 instead of the protection circuit 240 of FIG. As shown in FIG. 4, the protection circuit 440 acts as a voltage controlled voltage source ("VCVS") that drives the gate of the transistor 230 with a voltage proportional to the voltage on the drain terminal 201. The protection circuit 440 can be used, for example, in a system that is sufficiently well characterized such that the transmission characteristics of the voltage controlled voltage source bias the gate of the transistor 230 to a level greater than the on voltage of the transistor but less than the breakdown voltage of the transistor. .

圖5以部分方塊圖及部分示意圖形式繪示根據圖1之SR控制器180之第三實施例之SR控制器500。SR控制器500包括汲極終端201、閘極終端202、控制器210、閘極驅動器220及電晶體230,如前文圖2中所繪示。然而,SR控制器500包括一保護電路540,而非圖2之保護電路240。保護電路540包括如前文關於圖2之保護電路240所繪示之電晶體241及齊納二極體242,但是包括一偏壓電路543,而非圖2之偏壓電路243。偏壓電路543包括一電阻器544及一系列二極體545。電阻器544具有連接至汲極終端201的一第一終端、及連接至電晶體241之閘極的一第二終端。二極體545包括一組N個二極體中之三個代表性二極體,其中一第一二極體具有連接至電阻器544之第二終端的一陽極、及一陰極,且一第二二極體具有連接至該第一二極體之陰極的一陽極,以此類推直到一最後或「第N」二極體具有連接至該系列中之前一二極體之陰極的一陽極、及連接至二次接地的一陰極。FIG. 5 illustrates the SR controller 500 of the third embodiment of the SR controller 180 of FIG. 1 in a partial block diagram and a partial schematic diagram. The SR controller 500 includes a drain terminal 201, a gate terminal 202, a controller 210, a gate driver 220, and a transistor 230, as shown in FIG. 2 above. However, the SR controller 500 includes a protection circuit 540 instead of the protection circuit 240 of FIG. The protection circuit 540 includes a transistor 241 and a Zener diode 242 as previously described with respect to the protection circuit 240 of FIG. 2, but includes a biasing circuit 543 instead of the biasing circuit 243 of FIG. The bias circuit 543 includes a resistor 544 and a series of diodes 545. The resistor 544 has a first terminal connected to the drain terminal 201 and a second terminal connected to the gate of the transistor 241. The diode 545 includes a set of three representative diodes of the N diodes, wherein the first diode has an anode connected to the second terminal of the resistor 544, and a cathode, and a first The diode has an anode connected to the cathode of the first diode, and so on until a final or "Nth" diode has an anode connected to the cathode of the previous diode of the series, And a cathode connected to the secondary ground.

替代如圖2之SR控制器200中的齊納二極體,SR控制器500使用變成導電之一二極體鏈且因此基於二極體之數目乘以二極體正向切入電壓來鉗位在電晶體241之閘極上的電壓。若二極體之正向偏壓切入電壓減小約0.7,則電晶體241之閘極上之閘極偏壓電壓可經選擇為在約0.7之精確度內。Instead of the Zener diode in the SR controller 200 of FIG. 2, the SR controller 500 uses a pair of conductive diode chains and thus clamps the diode based on the number of diodes multiplied by the diode forward cut-in voltage. The voltage at the gate of transistor 241. If the forward biased cut-in voltage of the diode is reduced by about 0.7, the gate bias voltage on the gate of transistor 241 can be selected to be within about 0.7 accuracy.

圖6以部分方塊圖及部分示意圖形式繪示根據圖1之SR控制器180之第四實施例之SR控制器600。SR控制器600包括汲極終端201、閘極終端202、控制器210、閘極驅動器220及電晶體230,如前文圖2中所繪示。然而,SR控制器600包括一保護電路640,而非圖2之保護電路240。保護電路640包括一比較器641及一分壓器642。比較器641具有連接至DRAIN終端201的一電力供應終端、一正輸入終端、用於接收被標記為「V1」之電壓的一負輸入終端、及連接至電晶體230之閘極的一輸出終端。分壓器642包括電阻器643及644。電阻器643具有連接至汲極終端201的一第一終端、及連接至比較器641之正終端的一第二終端。電阻器644具有連接至電阻器643之第二終端的一第一終端、及連接至二次接地的一第二終端。FIG. 6 illustrates the SR controller 600 of the fourth embodiment of the SR controller 180 of FIG. 1 in a partial block diagram and a partial schematic diagram. The SR controller 600 includes a drain terminal 201, a gate terminal 202, a controller 210, a gate driver 220, and a transistor 230, as shown in FIG. 2 above. However, the SR controller 600 includes a protection circuit 640 instead of the protection circuit 240 of FIG. The protection circuit 640 includes a comparator 641 and a voltage divider 642. The comparator 641 has a power supply terminal connected to the DRAIN terminal 201, a positive input terminal, a negative input terminal for receiving the voltage labeled "V1", and an output terminal connected to the gate of the transistor 230. . Voltage divider 642 includes resistors 643 and 644. The resistor 643 has a first terminal connected to the drain terminal 201 and a second terminal connected to the positive terminal of the comparator 641. The resistor 644 has a first terminal connected to the second terminal of the resistor 643 and a second terminal connected to the secondary ground.

當汲極終端201上的電壓除以電阻器643及644所建立之除數(divide ratio)超過參考電壓V1時,比較器641提供處於一邏輯高狀態之一電壓至電晶體230之閘極。比較器641參考在汲極終端201上的電壓而設定邏輯高位準,且比較器641在內部調節電壓為大於電晶體230之導通電壓、但小於電晶體230之過電壓。比較器641提供鮮明的導通狀態及關斷狀態,並且防止過渡通過次臨限值區域。藉由謹慎匹配電阻器643及644且謹慎設定參考電壓V1,SR控制器600允許高精確度地設定電晶體230變成導電的電壓。When the voltage across the drain terminal 201 divided by the divider ratio established by the resistors 643 and 644 exceeds the reference voltage V1, the comparator 641 provides a voltage at a logic high state to the gate of the transistor 230. The comparator 641 sets a logic high level with reference to the voltage on the drain terminal 201, and the comparator 641 internally adjusts the voltage to be greater than the turn-on voltage of the transistor 230 but less than the overvoltage of the transistor 230. Comparator 641 provides a clear on state and an off state and prevents transition through the secondary threshold region. By carefully matching the resistors 643 and 644 and carefully setting the reference voltage V1, the SR controller 600 allows the transistor 230 to be set to a conductive voltage with high accuracy.

圖7以部分方塊圖及部分示意圖形式繪示根據圖1之SR控制器180之第五實施例之SR控制器700。SR控制器700包括汲極終端201、閘極終端202、控制器210、閘極驅動器220及電晶體230,如前文圖2中所繪示。然而,SR控制器700包括一保護電路740,而不是圖2之保護電路240。保護電路740包括如前文所繪示之電晶體241及齊納二極體242、以及一偏壓電路743。偏壓電路743包括一電阻器744及一分路調節器745。電阻器744具有連接至汲極終端201的一第一終端、及連接至電晶體241之閘極的一第二終端。分路調節器745具有連接至電阻器744之第二終端的一第一終端、及連接至二次接地的一第二終端。FIG. 7 illustrates the SR controller 700 of the fifth embodiment of the SR controller 180 of FIG. 1 in a partial block diagram and a partial schematic diagram. The SR controller 700 includes a drain terminal 201, a gate terminal 202, a controller 210, a gate driver 220, and a transistor 230, as shown in FIG. 2 above. However, the SR controller 700 includes a protection circuit 740 instead of the protection circuit 240 of FIG. The protection circuit 740 includes a transistor 241 and a Zener diode 242 as previously described, and a bias circuit 743. The bias circuit 743 includes a resistor 744 and a shunt regulator 745. The resistor 744 has a first terminal connected to the drain terminal 201 and a second terminal connected to the gate of the transistor 241. The shunt regulator 745 has a first terminal connected to the second terminal of the resistor 744 and a second terminal connected to the secondary ground.

代替由SR控制器200使用的齊納二極體245,SR控制器700使用分流調節器745來限制電晶體241之閘極上之閘極電壓。因為齊納二極體之崩潰電壓可以相對固定,所以SR控制器700提供設定電壓的更大靈活性。Instead of the Zener diode 245 used by the SR controller 200, the SR controller 700 uses a shunt regulator 745 to limit the gate voltage on the gate of the transistor 241. Since the breakdown voltage of the Zener diode can be relatively fixed, the SR controller 700 provides greater flexibility in setting the voltage.

上文揭示的課題被視為係闡釋性,且非限制性的,且隨附申請專利範圍企圖涵蓋落在申請專利範圍之真正範圍內的所有此種修改、強化、及其他實施例。例如,上文揭露具有不同保護電路的五個不同之同步整流器控制器。然而,亦可使用其他保護電路,其回應於在汲極終端201上的電壓超過一第一電壓,而在該第一電晶體之閘極上提供一電壓,該電壓大於該第一電晶體之一導通電壓且小於該第一電晶體之一過電壓。實施例揭露使用可呈多種形式之高電壓MOSFET,諸如雙擴散MOS (DMOS)電晶體、橫向擴散MOS (LDMOS)電晶體等。此外,如本文所揭露之同步整流器控制器可用於控制呈不同電力供應拓撲之同步整流器電晶體,諸如主動箝位返馳式電路中之箝位。另外,用於在通電期間保護的所揭露電路可搭配實作多種控制機制的控制器一起使用。The above-disclosed subject matter is considered to be illustrative and not limiting, and the scope of the appended claims is intended to cover all such modifications, modifications, and other embodiments. For example, five different synchronous rectifier controllers with different protection circuits are disclosed above. However, other protection circuits may be used in response to the voltage on the drain terminal 201 exceeding a first voltage, and providing a voltage on the gate of the first transistor that is greater than one of the first transistors. The turn-on voltage is less than one of the first transistors. Embodiments disclose the use of high voltage MOSFETs that can be in a variety of forms, such as dual diffused MOS (DMOS) transistors, laterally diffused MOS (LDMOS) transistors, and the like. Moreover, the synchronous rectifier controller as disclosed herein can be used to control synchronous rectifier transistors in different power supply topologies, such as clamps in active clamped flyback circuits. In addition, the disclosed circuitry for protection during power up can be used with controllers that implement a variety of control mechanisms.

在一種形式中,如本文所揭露之一種離線電力轉換器包含一變壓器、一功率電晶體、一主控制器、一同步整流器電晶體、及一同步整流器控制器。該變壓器具有:一一次繞組,其具有用於接收一輸入電壓的一第一端部、及一第二端部;及一二次繞組,其具有用於提供一輸出電壓的一第一端部、及一第二端部。該功率電晶體具有耦接至該一次繞組之該第二端部的一汲極、一閘極、及耦接至一一次接地終端的一源極。該主控制器具有用於接收一回授信號的一輸入、及耦接至該功率電晶體之該閘極的一輸出。該同步整流器電晶體具有耦接至該二次繞組之該第二端部的一汲極、一閘極、及耦接至一二次接地終端之一源極。該同步整流器控制器具有:一電力供應終端,其耦接至該二次繞組之該第一端部,用於接收一電力供應電壓;一汲極終端,其耦接至該二次繞組之該第二端部;一接地終端,其耦接至該二次接地終端;及一閘極終端,其耦接至該同步整流器電晶體之該閘極,其中該同步整流器控制器包括電路系統,在藉由在該汲極終端及該二次接地終端上之一電壓供電而不是藉由該電力供應電壓供電而通電後,該電路系統放電在該同步整流器電晶體之該閘極上之一電壓。In one form, an off-line power converter as disclosed herein includes a transformer, a power transistor, a main controller, a synchronous rectifier transistor, and a synchronous rectifier controller. The transformer has: a primary winding having a first end for receiving an input voltage, and a second end; and a secondary winding having a first end for providing an output voltage a part, and a second end. The power transistor has a drain coupled to the second end of the primary winding, a gate, and a source coupled to a primary ground terminal. The main controller has an input for receiving a feedback signal and an output coupled to the gate of the power transistor. The synchronous rectifier transistor has a drain coupled to the second end of the secondary winding, a gate, and a source coupled to a secondary ground terminal. The synchronous rectifier controller has: a power supply terminal coupled to the first end of the secondary winding for receiving a power supply voltage; and a drain terminal coupled to the secondary winding a second end portion; a grounding terminal coupled to the secondary grounding terminal; and a gate terminal coupled to the gate of the synchronous rectifier transistor, wherein the synchronous rectifier controller includes circuitry, The circuit discharges a voltage on the gate of the synchronous rectifier transistor by energizing a voltage on the drain terminal and the secondary ground terminal instead of being powered by the power supply voltage.

該同步整流器控制器可包含一控制器、一閘極驅動器、一第一電晶體、及一保護電路。該控制器具有耦接至該汲極終端的一輸入、及用於對其回應而提供一驅動信號的一輸出。該閘極驅動器具有耦接至該控制器之該輸出的一輸入、及耦接至該閘極終端的一輸出。該第一電晶體具有耦接至該閘極終端的一汲極、一閘極及耦接至該二次接地終端的一源極。該保護電路具有耦接至該汲極終端的一輸入、及耦接至該第一電晶體之該閘極的一輸出,其中該保護電路回應於在該汲極終端上之一電壓超過一第一電壓,而在該第一電晶體之該閘極上提供一電壓,該電壓大於該第一電晶體之一導通電壓且小於該第一電晶體之一過電壓。The synchronous rectifier controller can include a controller, a gate driver, a first transistor, and a protection circuit. The controller has an input coupled to the drain terminal and an output for providing a drive signal in response thereto. The gate driver has an input coupled to the output of the controller and an output coupled to the gate terminal. The first transistor has a drain coupled to the gate terminal, a gate, and a source coupled to the secondary ground terminal. The protection circuit has an input coupled to the drain terminal and an output coupled to the gate of the first transistor, wherein the protection circuit is responsive to a voltage on the gate terminal exceeding a first a voltage, and a voltage is provided on the gate of the first transistor, the voltage being greater than a turn-on voltage of the first transistor and less than an overvoltage of the first transistor.

根據一態樣,該控制器由一第一電力供應電壓予以供電,且該保護電路由在該汲極終端及該二次接地終端上之一電壓予以供電,而不是由該第一電力供應電壓予以供電。According to an aspect, the controller is powered by a first power supply voltage, and the protection circuit is powered by a voltage at the drain terminal and the secondary ground terminal instead of the first power supply voltage Power is supplied.

根據另一態樣,該保護電路包含一第二電晶體、一第一齊納二極體、及一偏壓電路。該第二電晶體具有耦接至該汲極終端的一汲極、一閘極及耦接至該第一電晶體之該閘極的一源極。該第一齊納二極體具有耦接至該第二電晶體之該源極的一陰極、及耦接至接地之一陽極。該偏壓電路具有:一第一終端,其耦接至該汲極終端;一第二終端,其耦接至該第二電晶體之該閘極;及一第三終端,其耦接至該接地,其中該偏壓電路回應於該汲極終端上之該電壓,而將該第二電晶體之該閘極偏壓至高於該第一齊納二極體之一崩潰電壓加上的該第二電晶體之一臨限電壓的一電壓。According to another aspect, the protection circuit includes a second transistor, a first Zener diode, and a bias circuit. The second transistor has a drain coupled to the drain terminal, a gate, and a source coupled to the gate of the first transistor. The first Zener diode has a cathode coupled to the source of the second transistor and an anode coupled to ground. The biasing circuit has a first terminal coupled to the drain terminal, a second terminal coupled to the gate of the second transistor, and a third terminal coupled to the The grounding, wherein the biasing circuit is responsive to the voltage on the drain terminal, and biasing the gate of the second transistor to be higher than a breakdown voltage of the first Zener diode One of the second transistors is a voltage that is limited to a voltage.

根據此另一態樣,該偏壓電路可包含一電阻器及一第二齊納二極體。該電阻器具有耦接至該汲極終端的一第一終端、及耦接至該第二電晶體之該閘極的一第二終端。該第二齊納二極體具有耦接至該電阻器之該第二終端的一陰極、及耦接至接地的一陽極,其中該第二齊納二極體具有之一崩潰電壓大於該第一齊納二極體之一崩潰電壓。According to another aspect, the bias circuit can include a resistor and a second Zener diode. The resistor has a first terminal coupled to the drain terminal and a second terminal coupled to the gate of the second transistor. The second Zener diode has a cathode coupled to the second terminal of the resistor and an anode coupled to the ground, wherein the second Zener diode has a breakdown voltage greater than the first One of the Zener diodes collapses voltage.

根據該另一態樣,該偏壓電路可包含一電阻器及一分路調節器。該電阻器具有耦接至該汲極終端的一第一終端、及耦接至該第二電晶體之該閘極的一第二終端。該分路調節器具有耦接至該電阻器之該第二終端的一第一終端、及耦接至接地的一第二終端。According to another aspect, the bias circuit can include a resistor and a shunt regulator. The resistor has a first terminal coupled to the drain terminal and a second terminal coupled to the gate of the second transistor. The shunt regulator has a first terminal coupled to the second terminal of the resistor and a second terminal coupled to the ground.

根據又另一態樣,該保護電路包含一電壓控制電壓源,該電壓控制電壓源具有耦接至該汲極終端的一輸入、及耦接至該第一電晶體之該閘極的一輸出,其中當該汲極終端之一電壓超過一預定電壓時,該電壓控制電壓源將該第一電晶體之該閘極加偏壓至高於該第一電晶體之一臨限電壓。According to still another aspect, the protection circuit includes a voltage control voltage source having an input coupled to the drain terminal and an output coupled to the gate of the first transistor And when the voltage of one of the drain terminals exceeds a predetermined voltage, the voltage control voltage source biases the gate of the first transistor to be higher than a threshold voltage of the first transistor.

根據另一態樣,該保護電路包含一比較器及一分壓器。該比較器具有耦接至該汲極終端的一電力供應終端、一正輸入、用於接收一參考電壓的一負輸入、及耦接至該第一電晶體之該閘極的一輸出。該分壓器具有:一第一終端,其耦接至該汲極終端;一第二終端,其耦接至該比較器之該正輸入,用於提供一經分壓電壓至該比較器之該正輸入;及一第二終端,其耦接至接地。According to another aspect, the protection circuit includes a comparator and a voltage divider. The comparator has a power supply terminal coupled to the drain terminal, a positive input, a negative input for receiving a reference voltage, and an output coupled to the gate of the first transistor. The voltage divider has a first terminal coupled to the drain terminal, and a second terminal coupled to the positive input of the comparator for providing a divided voltage to the comparator Positive input; and a second terminal coupled to ground.

因此,在法律允許的最大程度內,本創作的範圍待由下述申請專利範圍的最廣泛可容許解釋及彼等的等效解釋判定,且不應由上述實施方式所侷限或限制。Therefore, to the extent permitted by law, the scope of the present invention is to be determined by the broadest permissible interpretation of the scope of the claims below and their equivalent interpretations, and should not be limited or limited by the above embodiments.

100‧‧‧離線電力轉換器100‧‧‧Offline Power Converter

110‧‧‧變壓器 110‧‧‧Transformers

112‧‧‧一次繞組 112‧‧‧First winding

114‧‧‧二次繞組 114‧‧‧second winding

116‧‧‧輔助繞組 116‧‧‧Auxiliary winding

120‧‧‧功率電晶體 120‧‧‧Power transistor

130‧‧‧感測電阻器 130‧‧‧Sensor Resistors

140‧‧‧輔助電路 140‧‧‧Auxiliary circuit

142‧‧‧電阻器 142‧‧‧Resistors

144‧‧‧電阻器 144‧‧‧Resistors

146‧‧‧二極體 146‧‧ ‧ diode

148‧‧‧電容器 148‧‧‧ capacitor

150‧‧‧主控制器 150‧‧‧Master controller

160‧‧‧輸出電容器 160‧‧‧ output capacitor

170‧‧‧同步整流器(SR)電晶體 170‧‧‧Synchronous Rectifier (SR) Transistor

172‧‧‧二極體 172‧‧‧ diode

180‧‧‧SR控制器 180‧‧‧SR controller

190‧‧‧負載 190‧‧‧load

200‧‧‧SR控制器 200‧‧‧SR controller

201‧‧‧汲極終端 201‧‧‧Bungy terminal

202‧‧‧閘極終端 202‧‧‧gate terminal

210‧‧‧控制器 210‧‧‧ Controller

220‧‧‧閘極驅動器 220‧‧‧gate driver

230‧‧‧電晶體 230‧‧‧Optoelectronics

240‧‧‧保護電路 240‧‧‧Protection circuit

241‧‧‧電晶體 241‧‧‧Optoelectronics

242‧‧‧齊納二極體 242‧‧‧Zina diode

243‧‧‧偏壓電路 243‧‧‧Bias circuit

244‧‧‧電阻器 244‧‧‧Resistors

245‧‧‧齊納二極體 245‧‧‧Zina diode

300‧‧‧時序圖 300‧‧‧ Timing diagram

310‧‧‧汲極終端201上之電壓的波形 310‧‧‧ Waveform voltage on the bungee terminal 201

320‧‧‧電晶體241之閘極上之電壓的波形 320‧‧‧ Waveform of the voltage on the gate of transistor 241

330‧‧‧電晶體230之閘極上之電壓的波形 330‧‧‧ Waveform of the voltage on the gate of transistor 230

340‧‧‧閘極終端202上之電壓的波形 340‧‧ ‧ Waveform voltage on gate terminal 202

400‧‧‧SR控制器 400‧‧‧SR controller

440‧‧‧保護電路 440‧‧‧Protection circuit

500‧‧‧SR控制器500 500‧‧‧SR controller 500

540‧‧‧保護電路 540‧‧‧Protection circuit

543‧‧‧偏壓電路 543‧‧‧Bias circuit

544‧‧‧電阻器 544‧‧‧Resistors

545‧‧‧二極體 545‧‧‧ diode

600‧‧‧SR控制器 600‧‧‧SR controller

640‧‧‧保護電路 640‧‧‧Protection circuit

641‧‧‧比較器 641‧‧‧ comparator

642‧‧‧分壓器 642‧‧ ‧ voltage divider

643‧‧‧電阻器 643‧‧‧Resistors

644‧‧‧電阻器 644‧‧‧Resistors

700‧‧‧SR控制器 700‧‧‧SR controller

740‧‧‧保護電路 740‧‧‧Protection circuit

743‧‧‧偏壓電路 743‧‧‧bias circuit

744‧‧‧電阻器 744‧‧‧Resistors

745‧‧‧分路調節器 745‧‧ ‧ shunt regulator

Cgd‧‧‧寄生電容 Cgd‧‧‧ parasitic capacitance

Cgs‧‧‧寄生電容 Cgs‧‧‧ parasitic capacitance

CS‧‧‧第二輸入終端 CS‧‧‧second input terminal

DRAIN‧‧‧輸入終端/汲極終端 DRAIN‧‧‧Input terminal / bungee terminal

GND‧‧‧接地終端 GND‧‧‧ Grounding terminal

GATE‧‧‧輸出終端/閘極終端 GATE‧‧‧Output terminal/gate terminal

NA‧‧‧匝 NA‧‧‧匝

NP‧‧‧匝 NP‧‧‧匝

NS‧‧‧匝 NS‧‧‧匝

SW‧‧‧輸出終端 SW‧‧‧output terminal

V1‧‧‧參考電壓 V1‧‧‧ reference voltage

VCC‧‧‧第一電力供應終端/電力供應電壓 VCC‧‧‧First power supply terminal/power supply voltage

VCVS‧‧‧電壓控制電壓源 VCVS‧‧‧ voltage control voltage source

VD1‧‧‧箝位電壓V D1 ‧‧‧Clamping voltage

VD2‧‧‧箝位電壓V D2 ‧‧‧Clamping voltage

VIN‧‧‧輸入電壓V IN ‧‧‧ input voltage

VO‧‧‧輸出電壓V O ‧‧‧Output voltage

VS‧‧‧第一輸入終端/感測電壓 VS‧‧‧first input terminal/sensing voltage

所屬技術領域中具有通常知識者而更佳地瞭解可藉由參考附圖本揭露,並且本揭露之許多特徵及優點變得顯而易見,在附圖中: 圖1以部分方塊圖及部分示意圖形式繪示具有二次側同步整流的離線電力轉換器; 圖2以部分方塊圖及部分示意圖形式繪示根據圖1之同步整流器控制器之第一實施例之同步整流器(SR)控制器。 圖3繪示用於瞭解圖2之SR控制器之操作的時序圖; 圖4以部分方塊圖及部分示意圖形式繪示根據圖1之同步整流器控制器之第二實施例之SR控制器; 圖5以部分方塊圖及部分示意圖形式繪示根據圖1之同步整流器控制器之第三實施例之SR控制器; 圖6以部分方塊圖及部分示意圖形式繪示根據圖1之同步整流器控制器之第四實施例之SR控制器;及 圖7以部分方塊圖及部分示意圖形式繪示根據圖1之同步整流器控制器之第五實施例之SR控制器。Many of the features and advantages of the present disclosure will become more apparent from the aspects of the appended claims. An off-line power converter with secondary side synchronous rectification is shown; FIG. 2 is a partial block diagram and partial schematic diagram showing a synchronous rectifier (SR) controller of the first embodiment of the synchronous rectifier controller of FIG. 3 is a timing diagram for understanding the operation of the SR controller of FIG. 2. FIG. 4 is a partial block diagram and a partial schematic diagram showing the SR controller of the second embodiment of the synchronous rectifier controller of FIG. 5 is a partial block diagram and a partial schematic diagram showing the SR controller according to the third embodiment of the synchronous rectifier controller of FIG. 1. FIG. 6 is a partial block diagram and a partial schematic diagram showing the synchronous rectifier controller according to FIG. The SR controller of the fourth embodiment; and FIG. 7 shows the SR controller of the fifth embodiment of the synchronous rectifier controller according to FIG. 1 in partial block diagram and partial schematic diagram.

不同圖式中使用相同參考符號指示相似或等同的組件。除非另外說明,辭「耦接」及其關聯動辭形式包括直接連接及藉由本領域中已知的手段間接電連接二者,且除非另外說明,直接連接的任何描述也隱含使用合適形式之間接電連接的替代實施例。The use of the same reference symbols in different drawings indicates similar or equivalent components. Unless otherwise stated, the words "coupled" and their associated grammatical forms include both direct connections and indirect electrical connection by means of means known in the art, and unless otherwise stated, any description of the direct connection implicitly uses the appropriate form An alternate embodiment of an indirect electrical connection.

Claims (10)

一種用於控制具有一汲極、一閘極及一源極的一同步整流器電晶體之同步整流器控制器,其包含: 一控制器,其具有經調適以耦接至該同步整流器電晶體之該汲極的一輸入、及用於對其回應而提供一驅動信號的一輸出; 一閘極驅動器,其具有耦接至該控制器之該輸出的一輸入、及經調適以耦接至該同步整流器電晶體之該閘極的一輸出,用於提供一閘極信號至該同步整流器電晶體之該閘極; 一第一電晶體,其具有耦接至該閘極端子的一汲極、一閘極、及耦接至接地之一源極;及 一保護電路,其具有耦接至該汲極端子的一輸入、及耦接至該第一電晶體之該閘極的一輸出,其中該保護電路回應於在該汲極端子上之一電壓超過一第一電壓,而在該第一電晶體之該閘極上提供一電壓,該電壓大於該第一電晶體之一導通電壓且小於該第一電晶體之一過電壓。A synchronous rectifier controller for controlling a synchronous rectifier transistor having a drain, a gate and a source, comprising: a controller having an adaptation adapted to be coupled to the synchronous rectifier transistor An input of the drain and an output for providing a drive signal in response thereto; a gate driver having an input coupled to the output of the controller and adapted to couple to the synchronization An output of the gate of the rectifier transistor for providing a gate signal to the gate of the synchronous rectifier transistor; a first transistor having a drain coupled to the gate terminal, a gate, and a source coupled to the ground; and a protection circuit having an input coupled to the gate terminal and an output coupled to the gate of the first transistor, wherein the gate The protection circuit is responsive to a voltage on the 汲 terminal exceeding a first voltage, and providing a voltage on the gate of the first transistor, the voltage being greater than a turn-on voltage of the first transistor and less than the first One of the transistors is over-powered . 如請求項1之同步整流器控制器,其中該控制器由一第一電力供應電壓予以供電,且該保護電路由在該汲極端子及接地上之一電壓予以供電,而不是由該第一電力供應電壓予以供電。The synchronous rectifier controller of claim 1, wherein the controller is powered by a first power supply voltage, and the protection circuit is powered by a voltage at the anode terminal and the ground, instead of the first power The supply voltage is supplied. 如請求項1之同步整流器控制器,其中該保護電路包含: 一第二電晶體,其具有耦接至該汲極端子的一汲極、一閘極及耦接至該第一電晶體之該閘極的一源極; 一第一齊納二極體,其具有耦接至該第二電晶體之該源極的一陰極、及耦接至接地之一陽極;及 一偏壓電路,其具有:一第一端子,其耦接至該汲極端子;一第二端子,其耦接至該第二電晶體之該閘極;及一第三端子,其耦接至接地,其中該偏壓電路回應於該汲極端子上之該電壓,而將該第二電晶體之該閘極偏壓至高於該第一齊納二極體之一崩潰電壓加上該第二電晶體之一臨限電壓的一電壓。The synchronous rectifier controller of claim 1, wherein the protection circuit comprises: a second transistor having a drain coupled to the drain terminal, a gate, and the first transistor coupled to the first transistor a source of a gate; a first Zener diode having a cathode coupled to the source of the second transistor; and an anode coupled to the ground; and a bias circuit The first terminal is coupled to the 汲 terminal; the second terminal is coupled to the gate of the second transistor; and a third terminal is coupled to the ground. The bias circuit is responsive to the voltage on the drain terminal, and the gate of the second transistor is biased to be higher than a breakdown voltage of the first Zener diode plus the second transistor A voltage of a threshold voltage. 如請求項3之同步整流器控制器,其中該偏壓電路包含: 一電阻器,其具有耦接至該汲極端子的一第一端子、及耦接至該第二電晶體之該閘極的一第二端子;及 一第二齊納二極體,其具有耦接至該電阻器之該第二端子的一陰極、及耦接至接地的一陽極,其中該第二齊納二極體具有之一崩潰電壓大於該第一齊納二極體之一崩潰電壓。The synchronous rectifier controller of claim 3, wherein the bias circuit comprises: a resistor having a first terminal coupled to the drain terminal and the gate coupled to the second transistor a second terminal; and a second Zener diode having a cathode coupled to the second terminal of the resistor and an anode coupled to the ground, wherein the second Zener diode The body has a breakdown voltage greater than a breakdown voltage of the first Zener diode. 如請求項3之同步整流器控制器,其中該偏壓電路包含: 一電阻器,其具有耦接至該汲極端子的一第一端子、及耦接至該第二電晶體之該閘極的一第二端子;及 複數個二極體,其等串聯耦接在該電阻器之該第二端子與接地之間,該複數個二極體中之一第一者具有耦接至該電阻器之該第二端子的一陽極,該複數個二極體中之一最後者具有耦接至接地的一陰極,其中該複數個二極體具有之一組合切入電壓大於該第一齊納二極體之一崩潰電壓。The synchronous rectifier controller of claim 3, wherein the bias circuit comprises: a resistor having a first terminal coupled to the drain terminal and the gate coupled to the second transistor a second terminal; and a plurality of diodes connected in series between the second terminal of the resistor and the ground, wherein the first one of the plurality of diodes is coupled to the resistor An anode of the second terminal, the last one of the plurality of diodes has a cathode coupled to the ground, wherein the plurality of diodes have a combined cut-in voltage greater than the first Zener One of the polar bodies collapses voltage. 如請求項3之同步整流器控制器,其中該偏壓電路包含: 一電阻器,其具有耦接至該汲極端子的一第一端子、及耦接至該第二電晶體之該閘極的一第二端子;及 一分路調節器,其具有耦接至該電阻器之該第二端子的一第一端子、及耦接至接地之一第二端子。The synchronous rectifier controller of claim 3, wherein the bias circuit comprises: a resistor having a first terminal coupled to the drain terminal and the gate coupled to the second transistor a second terminal; and a shunt regulator having a first terminal coupled to the second terminal of the resistor and a second terminal coupled to the ground. 如請求項1之同步整流器控制器,其中該保護電路包含: 一電壓控制電壓源,其具有耦接至該汲極端子的一輸入、及耦接至該第一電晶體之該閘極的一輸出,其中當該汲極端子之一電壓超過一預定電壓時,該電壓控制電壓源將該第一電晶體之該閘極偏壓至高於該第一電晶體之一臨限電壓。The synchronous rectifier controller of claim 1, wherein the protection circuit comprises: a voltage control voltage source having an input coupled to the anode terminal and a gate coupled to the gate of the first transistor An output, wherein the voltage control voltage source biases the gate of the first transistor to be higher than a threshold voltage of the first transistor when a voltage of one of the NMOS terminals exceeds a predetermined voltage. 如請求項1之同步整流器控制器,其中該保護電路包含: 一比較器,其具有耦接至該汲極端子的一電力供應端子、一正輸入、用於接收一參考電壓的一負輸入、及耦接至該第一電晶體之該閘極的一輸出;及 一分壓器,其具有:一第一端子,其耦接至該汲極端子;一第二端子,其耦接至該比較器之該正輸入,用於提供一經分壓電壓至該比較器之該正輸入;及一第二端子,其耦接至接地。The synchronous rectifier controller of claim 1, wherein the protection circuit comprises: a comparator having a power supply terminal coupled to the 汲 terminal, a positive input, a negative input for receiving a reference voltage, And an output coupled to the gate of the first transistor; and a voltage divider having: a first terminal coupled to the terminal; a second terminal coupled to the The positive input of the comparator is for providing a divided voltage to the positive input of the comparator; and a second terminal coupled to the ground. 一種離線電力轉換器,其包含: 一變壓器,其具有:一一次繞組,其具有用於接收一輸入電壓的一第一端部、及一第二端部;及一二次繞組,其具有用於提供一輸出電壓的一第一端部、及一第二端部; 一功率電晶體,其具有耦接至該一次繞組之該第二端部的一汲極、一閘極、及耦接至一一次接地端子的一源極; 一主控制器,其具有用於接收一回授信號的一輸入、及耦接至該功率電晶體之該閘極的一輸出; 一同步整流器電晶體,其具有耦接至該二次繞組之該第二端部的一汲極、一閘極、及耦接至一二次接地端子之一源極;及 一同步整流器控制器,其具有:一電力供應端子,其耦接至該二次繞組之該第一端部,用於接收一電力供應電壓;一汲極端子,其耦接至該二次繞組之該第二端部;一接地端子,其耦接至該二次接地端子;及一閘極端子,其耦接至該同步整流器電晶體之該閘極,其中該同步整流器控制器包括電路系統,在藉由在該汲極端子及該二次接地端子上之一電壓供電而不是藉由該電力供應電壓供電之通電後,該電路系統放電在該同步整流器電晶體之該閘極上之一電壓。An off-line power converter comprising: a transformer having: a primary winding having a first end for receiving an input voltage, and a second end; and a secondary winding having a first end portion for providing an output voltage, and a second end portion; a power transistor having a drain, a gate, and a coupling coupled to the second end of the primary winding Connected to a source of the grounding terminal; a main controller having an input for receiving a feedback signal and an output coupled to the gate of the power transistor; a synchronous rectifier a crystal having a drain coupled to the second end of the secondary winding, a gate, and a source coupled to a secondary ground terminal; and a synchronous rectifier controller having: a power supply terminal coupled to the first end of the secondary winding for receiving a power supply voltage; a first terminal coupled to the second end of the secondary winding; a ground a terminal coupled to the secondary ground terminal; and a gate terminal, Coupling to the gate of the synchronous rectifier transistor, wherein the synchronous rectifier controller includes circuitry to supply voltage by one of voltages on the anode terminal and the secondary ground terminal instead of the power supply voltage After energization of the power supply, the circuitry discharges a voltage on the gate of the synchronous rectifier transistor. 如請求項9之離線電力轉換器,其中該同步整流器控制器包含: 一控制器,其具有耦接至該汲極端子的一輸入、及用於對其回應而提供一驅動信號的一輸出; 一閘極驅動器,其具有耦接至該控制器之該輸出的一輸入、及耦接至該閘極端子的一輸出; 一第一電晶體,其具有耦接至該閘極端子之一汲極、一閘極、及耦接至該二次接地端子的一源極;及 一保護電路,其具有耦接至該汲極端子的一輸入、及耦接至該第一電晶體之該閘極的一輸出,其中該保護電路回應於在該汲極端子上之一電壓超過一第一電壓,而在該第一電晶體之該閘極上提供一電壓,該電壓大於該第一電晶體之一導通電壓且小於該第一電晶體之一過電壓。The off-line power converter of claim 9, wherein the synchronous rectifier controller comprises: a controller having an input coupled to the terminal and an output for providing a drive signal in response thereto; a gate driver having an input coupled to the output of the controller and an output coupled to the gate terminal; a first transistor having a coupling to the gate terminal a pole, a gate, and a source coupled to the secondary ground terminal; and a protection circuit having an input coupled to the gate terminal and the gate coupled to the first transistor An output of the pole, wherein the protection circuit is responsive to a voltage on the anode terminal exceeding a first voltage, and providing a voltage on the gate of the first transistor, the voltage being greater than the first transistor An on voltage and less than one of the first transistors.

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI777206B (en) * 2020-04-28 2022-09-11 大陸商艾科微電子(深圳)有限公司 Synchronous rectifier controller and control method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI777206B (en) * 2020-04-28 2022-09-11 大陸商艾科微電子(深圳)有限公司 Synchronous rectifier controller and control method thereof
US11532992B2 (en) 2020-04-28 2022-12-20 Ark Semiconductor Corp. Ltd. Synchronous rectifier controller and control method thereof

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