TWM550123U - Pulse measuring device and pulse measuring equipment - Google Patents

Abstract

A pulse measuring device includes a plurality of sensing unit. Each of the sensing unit includes a piezoelectric pressure sensing module and a capacitive pressure sensing module. The piezoelectric pressure sensing module includes a thin film transistor array, a piezoelectric material layer, and a first electrode layer. The piezoelectric material layer is electrically connected to the thin film transistor array. The first electrode layer is electrically connected to the piezoelectric material layer. The thin film transistor array and the first electrode layer are respectively disposed on both sides of the piezoelectric material layer. The capacitive pressure sensing module is disposed on one side of the piezoelectric pressure sensing module. The capacitive pressure sensing module includes a second electrode layer, a flexible dielectric layer, and a third electrode layer. The second electrode layer and the third electrode are respectively disposed on both sides of the flexible dielectric layer.

Description

Pulse measuring device and pulse measuring instrument

This creation is about a pulse measuring device and a pulse measuring instrument.

In the process of the pulse, the Chinese medicine practitioner uses the food, the middle and the ring finger to apply the pulse, the middle and the sinking force to the pulse position of the patient's wrist, the position of the foot, and the ruler to obtain the pulse of the patient. In the past, many studies have been devoted to the question of how to identify the pulse of Chinese medicine. However, the results of these studies on pulse diagnosis theory or experimental design are focused on the heart beat and single point sensing pulse platform. Therefore, the results are not directly related to the doctor's pulse, which will result in the quantified results not being integrated with the doctor's clinical experience.

In order to further improve the related methods of pulse measurement, the related fields are not exhaustively developed. How to provide a better pulse measurement method is one of the current important research and development topics, and has become the target of improvement in related fields.

One of the technical aspects of this creation is to provide a pulse measurement device. To simultaneously measure the radial artery pulse of the wrist and the applied force applied to the pulse measuring device.

According to an embodiment of the present invention, a pulse measuring device includes a plurality of sensing units and each of the sensing units is disposed between two substrates. Each sensing unit includes a piezoelectric pressure sensing film layer and a capacitive pressure sensing film layer. The piezoelectric pressure sensing film layer includes a thin film transistor array, a piezoelectric material layer, and a first electrode layer. The piezoelectric material layer is disposed on one side of the thin film transistor array and electrically connected to the thin film transistor array. The first electrode layer is disposed on one side of the piezoelectric material layer relative to the thin film transistor array and electrically connected to the piezoelectric material layer. The capacitive pressure sensing film layer is disposed on one side of the piezoelectric pressure sensing film layer. The capacitive pressure sensing film layer includes a second electrode layer, a flexible dielectric layer, and a third electrode layer. The flexible dielectric layer is disposed on one side of the second electrode layer. The third electrode layer is disposed on a side of the flexible dielectric layer relative to the second electrode layer.

In one or more embodiments of the present invention, the thin film transistor array includes at least one transistor. The transistor contains a source/drain electrode. The piezoelectric material layer is electrically connected to the source/drain electrodes.

In one or more embodiments of the present invention, the thin film transistor array includes an amplifying circuit.

In one or more embodiments of the present invention, the amplifying circuit includes four transistors.

In one or more embodiments of the present invention, the piezoelectric material layer is a polyvinylidene difluoride (PVDF) layer.

In one or more embodiments of the present invention, piezoelectric pressure The sensing film layer further comprises an anisotropic conductive film (ACF). The anisotropic conductive paste is disposed between the thin film transistor array and the piezoelectric material layer.

In one or more embodiments of the present invention, the third electrode layer has a patterned pattern.

In one or more embodiments of the present invention, the flexible dielectric layer is a silicone layer.

In one or more embodiments of the present invention, the pulse measurement device further includes a flexible substrate. The flexible substrate is disposed between the piezoelectric pressure sensing film layer and the capacitive pressure sensing film layer.

According to another embodiment of the present invention, the pulse measuring apparatus comprises a body, a plurality of indenters, a groove, and a plurality of the aforementioned pulse measuring devices. The indenter is connected to the body. The groove is disposed on the body, wherein the position of the groove corresponds to the position of the pressure head. The pulse measuring devices are respectively disposed on the indenter.

In the process of pulse measurement, one side of the pulse measuring device (piezoelectric pressure sensing film layer) is placed on the wrist, and the other side of the pulse measuring device (capacitive pressure sensing film layer) can apply a force. To simulate the pulse of the Chinese medicine practitioner. Since the capacitive pressure sensing film layer is disposed on one side of the piezoelectric pressure sensing film layer, the pulse measuring device can measure the radial artery pulse of the wrist while using the capacitive pressure sensing film layer measurement. The force applied to the pulse measuring device. Because the pulse measuring device simultaneously measures the external force of the radial artery pulse and the pulse measuring device, it will be able to obtain complete information similar to that obtained by the Chinese medicine practitioner, and thus it is easy to integrate with the clinical experience of the Chinese medicine practitioner when analyzing the data.

100‧‧‧ pulse measuring device

110, 120, 130‧‧‧ substrates

200‧‧‧Piezoelectric pressure sensing film

210‧‧‧Thin Film Array

212‧‧‧Amplification circuit

213‧‧‧Optoelectronics

213d‧‧‧Source/dot electrode

220‧‧‧ Piezoelectric layer

230‧‧‧First electrode layer

240‧‧‧ anisotropic conductive adhesive

300‧‧‧Capacitive pressure sensing film

310‧‧‧Second electrode layer

320‧‧‧Flexible dielectric layer

330‧‧‧ third electrode layer

331‧‧‧ patterned third electrode

401, 402‧‧‧Flexible circuit boards

800‧‧‧ pulse measuring instrument

801‧‧‧ body

802‧‧‧ indenter

901‧‧‧ wrist

A-A’‧‧‧ segment

B‧‧‧buffer layer

G‧‧‧ gate

GI‧‧‧ gate insulation

P‧‧‧Sensor unit

PV‧‧‧ protective layer

SE‧‧‧Semiconductor layer

FIG. 1 is a cross-sectional view showing a pulse measuring device and a wrist according to an embodiment of the present invention.

2 is a top plan view of a pulse image measuring device according to an embodiment of the present invention.

Fig. 3 is a schematic cross-sectional view along line A-A' in Fig. 2.

4 is a top plan view of a piezoelectric pressure sensing film layer according to an embodiment of the present invention.

FIG. 5 is a top view of a capacitive pressure sensing film layer according to an embodiment of the present invention.

FIG. 6 is a perspective view of a pulse measuring instrument according to an embodiment of the present invention.

In the drawings, the thickness of each element or the like is exaggerated for the sake of clarity. Throughout the specification, the same reference numerals denote the same elements. It will be understood that when an element such as a layer, a film, a region or a substrate is referred to as "on the other element side," "on another element," or "connected to another element," "overlap to another element," It can be connected directly to another element or to another element, or an intermediate element can also be present. In contrast, when an element is referred to as “directly on” or “directly connected to” another element, As used herein, "connected" may refer to physics and / Or electrical connection.

It will be understood that the terms "first", "second", "third", etc., may be used herein to describe various elements, components, regions, layers and/or portions, but such elements, components, regions, and / Or part of it should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, Thus, "a first element", "a component", "a", "a", "a" or "a"

The terminology used herein is for the purpose of describing particular embodiments, As used herein, the singular forms "", "," “or” means “and/or”. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items. It is also to be understood that the terms "comprises" and / or "comprising", when used in the specification, are in the The presence or addition of other features, regions, steps, operations, components, components, and/or combinations thereof.

In addition, "one side" may mean a relative term such as "lower" or "bottom" and "upper" or "top" may be used herein to describe the relationship of one element to another, as shown. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation shown. For example, if the device in one of the figures is flipped, it is described as being on the "lower" side of the other components. The components will be oriented on the "upper" side of the other components. Thus, the exemplary term "lower" can be used in the <RTI ID=0.0> </ RTI> </ RTI> <RTIgt; Elements that are described as "below" or "beneath" other elements will be &quot;above&quot; Thus, the exemplary term "lower" or "lower" can encompass the orientation of the above and below.

As used herein, "about," "substantially," or "approximate" includes the values and average values within acceptable ranges of the particular values determined by those of ordinary skill in the art, in view of the measurements and The specific amount of error associated with the measurement (ie, the limits of the measurement system) is measured. For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%.

All terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs, unless otherwise defined. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having meanings consistent with their meaning in the context of the related art and the present invention, and will not be construed as idealized or excessive. Formal meaning, unless explicitly defined in this article. In the following, a plurality of embodiments of the present invention will be disclosed in the drawings. For the sake of clarity, a number of practical details will be described in the following description. However, it should be understood that these practical details are not applied to limit the creation. That is to say, in the implementation part of this creation, these practical details are not necessary. Moreover, for the sake of simplicity of the drawings, some conventional structures and components will be drawn in a simple schematic manner in the drawings. Show it.

FIG. 1 is a cross-sectional view showing a pulse measuring device and a wrist according to an embodiment of the present invention. 2 is a top plan view of a pulse image measuring device according to an embodiment of the present invention. As shown, an embodiment of the present invention provides a pulse measurement device 100. The pulse measuring device 100 is placed on the wrist 901 in use to measure the pulse of the brachial artery in the wrist.

As shown in FIG. 1 and FIG. 2 , the pulse measuring device 100 includes a plurality of sensing units P , wherein each sensing unit P includes a piezoelectric pressure sensing film layer 200 and a capacitive pressure sensing film layer 300 . The detailed arrangement relationship between the piezoelectric pressure sensing film layer 200 and the capacitive pressure sensing film layer 300 will be described in the fourth and fifth figures, respectively. Fig. 3 is a schematic cross-sectional view along line A-A' in Fig. 2. As shown in FIGS. 2 and 3 , the piezoelectric pressure sensing film layer 200 includes a thin film transistor array 210 , a piezoelectric material layer 220 , and a first electrode layer 230 . The piezoelectric material layer 220 is disposed on one side of the thin film transistor array 210 and electrically connected to the thin film transistor array 210. The first electrode layer 230 is disposed on one side of the piezoelectric material layer 220 opposite to the thin film transistor array 210 and electrically connected to the piezoelectric material layer 220 .

The capacitive pressure sensing film layer 300 is disposed on one side of the piezoelectric pressure sensing film layer 200. The capacitive pressure sensing film layer 300 includes a second electrode layer 310, a flexible dielectric layer 320, and a third electrode layer 330. The flexible dielectric layer 320 is disposed on one side of the second electrode layer 310. The third electrode layer 330 is disposed on a side of the flexible dielectric layer 320 relative to the second electrode layer 310.

In the process of pulse measurement, one of the pulse measuring devices 100 The side (ie, the piezoelectric pressure sensing film layer 200) is disposed on the wrist 901, and the other side of the pulse measuring device 100 (ie, the capacitive pressure sensing film layer 300) can be applied with a force to simulate the Chinese medicine practitioner's Put the pulse. Since the capacitive pressure sensing film layer 300 is disposed on one side of the piezoelectric pressure sensing film layer 200, the pulse measuring device 100 can measure the radial artery pulse of the wrist 901 in the piezoelectric pressure sensing film layer 200. At the same time, the force applied to the pulse measuring device 100 is measured by the capacitive pressure sensing film layer 300. Since the pulse measuring device 100 simultaneously measures the external force of the radial artery pulse and the pulse measuring device 100, it is possible to obtain complete information similar to that obtained by the Chinese medicine practitioner, and thus it is easy to analyze the data with the clinical experience of the Chinese medicine practitioner. Integration.

For example, the thin film transistor array 210 includes at least one transistor 213. The transistor 213 includes a gate G, a gate insulating layer GI, a semiconductor layer SE, a source/drain electrode 213d, and a protective layer PV. The gate insulating layer GI covers the gate G. The semiconductor layer SE is disposed on the gate insulating layer GI, wherein the set position of the semiconductor layer SE corresponds to the set position of the gate G. The source/drain electrode 213d is disposed on the gate insulating layer GI, wherein the source/drain electrode 213d is electrically connected to the semiconductor layer SE and the piezoelectric material layer 220. The protective layer PV covers the semiconductor layer SE and a portion of the source/drain electrodes 213d. The transistor 213 of the present embodiment is exemplified by a bottom gate type gate-gate TFT, but the present invention is not limited thereto. In other embodiments, the transistor 213 may also be a top-gate TFT, for example, the semiconductor layer SE is located under the gate G, and the gate of the semiconductor layer SE and the gate G are gated. Insulation layer GI, or other suitable type of transistor. The number and type of transistors are not intended to limit this creation.

The first electrode layer 230 is grounded. Since the first electrode layer 230 is electrically connected to the piezoelectric material layer 220, the piezoelectric material layer 220 will be grounded.

For example, the piezoelectric pressure sensing film layer 200 further includes an anisotropic conductive film (ACF) 240. The anisotropic conductive paste 240 is disposed between the thin film transistor array 210 and the piezoelectric material layer 220.

For example, the piezoelectric material layer 220 is a polyvinylidene difluoride (PVDF) layer. It should be understood that the specific embodiments of the above-mentioned piezoelectric material layer 220 are merely illustrative and are not intended to limit the present creation. Those skilled in the art to which the present invention pertains should flexibly select the piezoelectric material layer according to actual needs. The specific implementation of 220.

Since the piezoelectric pressure sensing film layer 200 is attached to the wrist 901, when the brachial artery is beating, the piezoelectric material layer 220 will receive external pressure, and thus will generate a voltage, and by the anisotropy. The conductive paste 240 transfers current to the source/drain electrode 213d of the transistor 213, thereby allowing the transistor 213 to receive a current signal.

Further, since the different parts of the radial artery do not jump the same, the external pressure received by different parts of the piezoelectric material layer 220 will not be the same, so the transistors 213 of the different sensing units P will receive different ones. Current signal.

It should be noted that since the piezoelectric material layer 220 will generate a voltage while being deformed by receiving the pressure, the transistor 213 will be reconnected. The corresponding current signal is received, so the piezoelectric pressure sensing film layer 200 can measure the brachial artery pulse at different timings. In other words, the piezoelectric pressure sensing membrane layer 200 can measure the dynamic pressure of the radial artery.

For example, the flexible dielectric layer 320 can be a silicone layer. The flexible dielectric layer 320 can also be Polyimide (PI), Poly(4-vinyl phenyl (PVP), Poly(vinyl alcohol), PVA, and polymethyl. Methyl methacrylate (PMMA), polypropylene (PP), Benzocyclobutene (BCB), but is not limited thereto. In addition, the flexible dielectric layer 320 may also be 矽An organic material such as a siloxane (SOC) polymer, a Silsesquioxane polymer, a Ferroelectric polymer, or a lanthanum carbide (SiC) polymer, but is not limited thereto. Flexible dielectric The layer 320 has a better flexibility, so that the capacitive pressure sensing film layer 300 can be applied to the piezoelectric pressure sensing film layer 200. It should be understood that the above-mentioned flexible dielectric layer 320 is The specific embodiments are merely illustrative and are not intended to limit the present invention. Those skilled in the art to which the present invention pertains, the specific embodiment of the flexible dielectric layer 320 should be flexibly selected according to actual needs.

For example, the third electrode layer 330 has a patterned pattern. In other words, the third electrode layer 330 includes a plurality of patterned third electrodes 331 (see FIG. 5). Further, the patterned third electrode 331 is an electrode that is electrically insulated from each other. It should be understood that the specific embodiment of the third electrode layer 330 mentioned above is merely an example, and is not intended to limit the creation, this creation Those skilled in the art will be able to flexibly select a specific embodiment of the third electrode layer 330 depending on actual needs.

Since a force is applied to the capacitive pressure sensing film layer 300 during the process of performing the pulse measurement, the flexible dielectric layer 320 will be deformed accordingly, and thus between the third electrode layer 330 and the second electrode layer 310. The distance will be shortened. Therefore, the capacitive pressure sensing film layer 300 can infer the magnitude of the force applied to the capacitive pressure sensing film layer 300 by the capacitance between the third electrode layer 330 and the second electrode layer 310.

Further, since the skin of the wrist 901 is not a flat surface, the force applied to different portions of the capacitive pressure sensing film layer 300 may not be the same, and the deformation of different portions of the flexible dielectric layer 320 is not The same will be the same, so the distance between the different patterned third electrodes 331 (see FIG. 5) of the third electrode layer 330 and the second electrode layer 310 will not be the same. Thus, the capacitive pressure sensing film layer 300 can infer the magnitude of the force applied to different portions of the capacitive pressure sensing film layer 300 by differently patterning the capacitance between the third electrode 331 and the second electrode layer 310.

Since the addition of the force is a pulse of the simulated Chinese medicine practitioner, the additional force is generally fixed during the measurement of the pulse. Thus, the capacitive pressure sensing film layer 300 is an applied force that is substantially constant.

For example, the pulse measurement device 100 further includes a substrate 110, 120, 130, wherein the substrate 110, 120, 130 is preferably a flexible material, including, for example, polyamide (PA) polyimide ( Polyimide, PI), polymethyl methacrylate (Poly (methyl) Methacrylate), PMMA), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), fiber reinforced plastics (FRP), polyether A polyetheretherketone (PEEK), an epoxy resin, or other suitable material, or a combination of at least two of the foregoing, but is not limited thereto. In other words, the flexible materials of the substrates 110, 120, and 130 may be all organic material mixtures, organic material mixed inorganic materials, organic molecules and inorganic molecules bonded materials, combinations of at least two of the above or other Applicable materials.

The substrate 110 is preferably a flexible substrate, and the substrate 110 is disposed between the piezoelectric pressure sensing film layer 200 and the capacitive pressure sensing film layer 300. The substrate 120 is disposed on one side of the piezoelectric pressure sensing film layer 200 with respect to the capacitive pressure sensing film layer 300. The substrate 130 is disposed on one side of the capacitive pressure sensing film layer 300 with respect to the piezoelectric pressure sensing film layer 200. The substrate 110 can be used to support the piezoelectric pressure sensing film layer 200 and/or the capacitive pressure sensing film layer 300. The substrates 120, 130 have a function of supporting or protecting.

As shown in FIG. 1 , for example, the pulse measurement device 100 further includes flexible circuit boards 401 and 402. The piezoelectric pressure sensing film layer 200 is electrically connected to the flexible circuit board 401. The capacitive pressure sensing film layer 300 is electrically connected to the flexible circuit board 402. The flexible circuit boards 401, 402 further process the signals generated by the piezoelectric pressure sensing film layer 200 and the capacitive pressure sensing film layer 300.

FIG. 4 is a top plan view of a piezoelectric pressure sensing film layer 200 in accordance with an embodiment of the present invention. As shown in FIG. 4, the thin film transistor array 210 of the different piezoelectric pressure sensing film layers 200 is arranged in an array pattern. For example, the thin film transistor array 210 is exemplified as a 3x3 array pattern, and in other embodiments, a different number of array patterns can be set as desired. Thus, similar to the Chinese medicine practitioner's finger can detect the blood pressure of different parts of the radial artery, different thin film transistor array 210 can detect the blood pressure of different parts of the radial artery, and thus can be further integrated with the clinical experience of Chinese medicine practitioners.

In addition, the electrode pattern of the thin film transistor array 210 of the different piezoelectric pressure sensing film layer 200 is relatively small compared to the conventional piezoelectric pressure sensing film layer, and thus the crosstalk problem between different electrodes can be suppressed.

For example, thin film transistor array 210 includes amplification circuit 212. The amplifying circuit 212 preferably includes four transistors 213. The amplifying circuit 212 can filter and amplify the signals generated by the piezoelectric material layer 220.

FIG. 5 is a top plan view of a capacitive pressure sensing film layer 300 in accordance with an embodiment of the present invention. As shown in FIG. 5 , the third electrode layer 330 is a schematic diagram of a pattern in which the patterned third electrodes 331 are arranged in an array. For example, the patterned third electrode 331 is arranged in a 3x3 array pattern. Since the force applied to the pulse measuring device 100 is not evenly distributed, the different patterned third electrodes 331 will measure the applied force at various different positions.

Further, as shown in FIG. 2, FIG. 4 and FIG. 5, the position of the thin film transistor array 210 will correspond to the patterned third power. The setting position of the pole 331. In other words, the orthographic projection of thin film transistor array 210 on substrate 110 (see FIG. 3), 120, 130 will at least partially overlap the orthographic projection of patterned third electrode 331 on substrate 110, 120, 130. Thus, the thin film transistor array 210 detects that the blood pressure of different portions of the radial artery will correspond to the applied third electrode 331 detecting the applied force applied to the pulse measuring device 100.

FIG. 6 is a perspective view of a pulse measuring instrument 800 according to an embodiment of the present invention. As shown in FIG. 6, the pulse measuring instrument pulse measuring instrument 800 includes a body 801, a ram 802, a recess 803, and the aforementioned pulse measuring device 100. The indenter 802 is coupled to the body 801. The groove 803 is disposed on the body 801, and the position of the groove 803 corresponds to the position of the indenter 802. The pulse measuring device 100 is disposed on the indenter 802.

For example, the number of indenters 802 is plural, and the number of the pulse measuring devices 100 is plural. Further, the number of indenters 802 is three, and the number of the pulse measuring devices 100 is three.

The operation of measuring the brachial artery pulse in the wrist using the pulse measuring instrument 800 will be briefly described below. First, the wrist 901 (see Fig. 1) is placed in the recess 803 to fix the position of the wrist 901.

Then, the pulse measuring device 100 is controlled to press the ram 802 down. Then, the three pulse measuring devices 100 respectively disposed on the three indenters 802 are respectively attached to the first specific region, the second specific region, and the third specific region (inch, off, ruler) of the wrist 901. At the same time, three indenters 802 corresponding to different specific regions (inch, off, ruler) respectively apply three different force paths to different pulse measuring devices 100 to simulate Chinese medicine. The teacher will apply three different forces (floating, middle, and sinking) to the wrist 901 when the pulse is applied.

After the indenter 802 is properly secured to the pulse measuring device 100, the capacitive pressure sensing film layers 300 of the three pulse measuring devices 100 respectively measure the force applied to the pulse measuring device 100 by the indenter 802. At the same time, the piezoelectric pressure sensing film layers 200 of the three pulse measuring devices 100 respectively measure the first specific region, the second specific region, and the third specific region (inch, off, ruler) corresponding to the wrist 901. Brachial artery pulse.

For example, different patterned third electrodes 331 of each capacitive pressure sensing film layer 300 (see FIG. 5, which are arranged in an array) measure the difference applied to the capacitive pressure sensing film layer 300, respectively. The strength of the position. At the same time, different thin film transistor arrays 210 (see FIG. 4, which are arranged in an array) of each piezoelectric pressure sensing film layer 200 respectively measure the radial artery at different positions in different specific regions of the wrist 901 blood pressure.

Further, the capacitive pressure sensing film layer 300 is inferred to be applied to the capacitive pressure sensing film layer 300 by the different size of the capacitance between the third electrode 331 and the second electrode layer 310 of the third electrode layer 330. The strength of the different parts. At the same time, different portions of the piezoelectric material layer 220 of the piezoelectric pressure sensing film layer 200 will generate current after receiving the pressure generated by the beating of the radial artery, and thus the transistors of the different thin film transistor arrays 210. 213 will receive the corresponding current signal separately.

Thereafter, the piezoelectric pressure sensing film layer 200 and the capacitive pressure sensing film layer 300 can respectively transmit the information they receive to the flexible circuit boards 401 and 402 to further process the piezoelectric pressure sensing film layer. 200 with The signal generated by the capacitive pressure sensing film layer 300.

In the process of pulse measurement, one side of the pulse measuring device (ie, the piezoelectric pressure sensing film layer) is disposed on the wrist, and the other side of the pulse measuring device (ie, the capacitive pressure sensing film layer) can be applied. Force, to simulate the pulse of the Chinese medicine practitioner. Since the capacitive pressure sensing film layer is disposed on one side of the piezoelectric pressure sensing film layer, the pulse measuring device can measure the radial artery pulse of the wrist while using the capacitive pressure sensing film layer measurement. The force applied to the pulse measuring device. Because the pulse measuring device simultaneously measures the external force of the radial artery pulse and the pulse measuring device, it will be able to obtain complete information similar to that obtained by the Chinese medicine practitioner, and thus it is easy to integrate with the clinical experience of the Chinese medicine practitioner when analyzing the data.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any person skilled in the art can make various changes and refinements without departing from the spirit and scope of the present invention. The scope is subject to the definition of the scope of the patent application attached.

100‧‧‧ pulse measuring device

110, 120, 130‧‧‧ substrates

200‧‧‧Piezoelectric pressure sensing film

210‧‧‧Thin Film Array

213‧‧‧Optoelectronics

213d‧‧‧Source/dot electrode

220‧‧‧ Piezoelectric layer

230‧‧‧First electrode layer

240‧‧‧ anisotropic conductive adhesive

300‧‧‧Capacitive pressure sensing film

310‧‧‧Second electrode layer

320‧‧‧Flexible dielectric layer

330‧‧‧ third electrode layer

A-A’‧‧‧ segment

B‧‧‧buffer layer

G‧‧‧ gate

GI‧‧‧ gate insulation

PV‧‧‧ protective layer

SE‧‧‧Semiconductor layer

Claims (9)

A pulse measuring device includes: a plurality of sensing units, wherein each of the sensing units comprises a piezoelectric pressure sensing film layer and a capacitive pressure sensing film layer, and each of the sensing units is disposed on two substrates The piezoelectric pressure sensing film layer comprises: a thin film transistor array disposed on one side of the substrate; a piezoelectric material layer disposed on one side of the thin film transistor array and electrically connected The thin film transistor array; and a first electrode layer disposed on a side of the piezoelectric material layer opposite to the thin film transistor array and electrically connected to the piezoelectric material layer; and the capacitive pressure sensing film a layer disposed on one side of the piezoelectric pressure sensing film layer, the capacitive pressure sensing film layer comprising: a second electrode layer; a flexible dielectric layer disposed on the second electrode layer a side; and a third electrode layer disposed on a side of the flexible dielectric layer relative to the second electrode layer. The pulse measuring device of claim 1, wherein the thin film transistor array comprises at least one transistor, the transistor comprising a source/drain electrode, the piezoelectric material layer being electrically connected to the source/drain electrode. The pulse measuring device of claim 1, wherein the thin film transistor array comprises an amplifying circuit. The pulse measuring device according to claim 1, wherein the piezoelectric material layer is a polyvinylidene difluoride (PVDF) layer. The pulse measuring device of claim 1, wherein the piezoelectric pressure sensing film layer further comprises an anisotropic conductive film (ACF) disposed on the thin film transistor array and the piezoelectric material layer. between. The pulse measuring device of claim 1, wherein the third electrode layer has a patterned pattern. The pulse measuring device of claim 1, wherein the flexible dielectric layer is a silicone layer. The pulse measuring device of claim 1, further comprising: a flexible substrate disposed between the piezoelectric pressure sensing module and the capacitive pressure sensing film layer. A pulse measuring instrument comprising: a body; a plurality of indenters connected to the body; a groove disposed on the body, wherein the position of the groove corresponds to a position of the indenters; and a plurality of The pulse measuring device according to claim 1 is respectively disposed on the indenters.