TWM542848U - Energy purity module - Google Patents

Abstract

An energy purity module adapted to a ion-implant system includes a chamber, graphite components and protection layers. The graphite components are disposed in the chamber and extend parallelly. The surfaces of the graphite components have apertures. The protection layers are respectively formed on the surfaces of the graphite components and filled inside of the apertures.

Description

Energy purification module

The present invention relates to an energy purification module, and more particularly to an energy purification module having a protective layer formed on a graphite element.

Ion implantation is a process in which dopant materials or impurities are implanted into a substrate layer via ion bombardment. In a semiconductor process, implanting a dopant material can alter the electrical, optical, or mechanical properties of the original material layer. For example, implanting a dopant into an existing semiconductor substrate layer can change the conductivity of the substrate layer. Therefore, in the process of an integrated circuit (IC), doping of impurities can improve the existing properties of the integrated circuit.

A typical ion implantation system includes an ion source and a series of ion beam elements. Additionally, the ion source includes a chamber that produces an ion beam. Further, the ion source further includes a power supply and extraction electrode assembly mounted adjacent the chamber. Ion implantation systems can generate ion beams for different ionic species and extraction voltages. During the operation of the ion implantation system, residues from the wafer, including germanium and photoresist compounds, may be applied to the guided ion beam line elements. These residues accumulate on the aforementioned ion beam line elements and can cause detachment, which causes particle contamination on the fabricated wafer.

In current ion implantation systems, an energy purity module (EPM) can be used to filter particles produced on the ion beam line components to isolate the wafer from contaminating particles. However, since the energy purification module itself has a graphite element, and after the ion beam passes through the graphite element of the energy purification module, it is still possible to erode the graphite element to produce carbon particles. In addition, carbon particles can be implanted into the wafer with the ion beam, which in turn affects the quality of the wafer.

The novel creation provides an energy purification module having a protective layer on the graphite element, which can reduce the carbon particles generated by the ion beam erosion of the graphite element.

The energy purification module created by the novel is suitable for use in an ion implantation system. The energy purification module includes a cavity, a graphite element, and a protective layer. The graphite elements are arranged in parallel with each other in the cavity, and the surfaces of the graphite elements respectively have pores. The protective layers are respectively formed on the surface of the graphite member and filled in the pores, respectively.

In an embodiment of the present invention, the constituent material of the protective layer includes glass phase carbon.

In an embodiment of the novel creation, the pores of the graphite element described above extend inwardly from the surface of the graphite element to a depth of from 5 milliTorr to 10 millimeters.

In an embodiment of the present invention, the above-described protective layer is formed by an impregnation process.

In an embodiment of the novel creation, the graphite element described above comprises a graphite electrode rod.

Based on the above, in various embodiments of the novel creation, the energy purification module can be adapted for use in an ion implantation system. In addition, the energy purification module has a plurality of graphite elements, and the graphite elements are arranged in parallel with each other and disposed in the cavity of the energy purification module. In various embodiments of the novel creation, a protective layer may be formed on the graphite element that covers the surface of the graphite element and is filled in the pores of the graphite element. The graphite element can reduce the carbon particles eroded by the ion beam through the graphite element by the protective layer formed on the surface thereof, so as to avoid contamination of the wafer by the carbon particles in the process of implanting the implanted wafer, and the influence The quality of the finished wafer is finally produced.

The above described features and advantages of the present invention will become more apparent and understood from the following description.

Figure 1A is a schematic illustration of the ion implant system of the present invention. FIG. 1B is a schematic diagram of an energy purification module according to an embodiment of the present invention. 2 is a top plan view of the energy purification module of FIG. 1B. As shown in FIG. 1A, the ion implantation system 50 can include an ion source 51, a 90 degree analytical magnet element 52, an ion deceleration module 53, a 55 degree analytical magnet element 54, an energy purification module 100, and a wafer processing chamber 55. In addition, as shown in FIG. 1B , the energy purification module 100 has a cavity 110 , a plurality of graphite elements 120 , and a protective layer 130 . In the present embodiment, the graphite elements 120 are disposed in the cavity 110 and extend parallel to each other. Furthermore, the surface of each of the graphite elements 120 may form a protective layer 130, respectively.

In this embodiment, the material of the ion source 51 may include boron (boron, B), carbon (carbon), oxygen (oxygen), germanium (germanium, Ge), phosphorus (phosphorus, P). , arsenic (As), germanium (silicon, Si), helium (helium, He), neon (neon), argon (argon), krypton (Kr), nitrogen (nitrogen, N), Atom or molecular species of hydrogen (hydrogen), fluorine (fluorine), and chlorine (chlorine, Cl).

As above. The ion implantation system 50 produces a stable ion beam for a variety of different ionic species and extraction voltages. When the ion implantation system 50 uses a source gas _{(e.g., AsH 3, PH 3, BF} 3 , and others) for a period of operation, the ion beam is implanted at the ion generating deposits on the optical elements in the system 50. The aforementioned deposits may fall off and produce contaminating particles. Contaminant particles can contaminate the wafer, which in turn results in poor quality of the finished wafer.

In detail, the particle contamination problem reduces the effectiveness of plasma etching and deposition in electronic device processes. Particle contamination can result in device failure, poor film formation properties, changes in material resistivity, and impurity penetration. In addition, as the size of electronic devices decreases, semiconductor wafer processes require tighter control over the etch profile. Therefore, in terms of process, the number, density and size of allowable contaminating particles also need to meet more stringent requirements. In the present embodiment, the ion implantation system 50 can filter the above-mentioned contaminated particles by the configuration of the energy purification module 100 to reduce the amount of contaminated particles reaching the wafer processing chamber 55.

Referring to FIG. 2, the graphite element 120 of the present embodiment is, for example, a graphite electrode rod, which is disposed in parallel with each other and disposed in the cavity 110. In addition, the protective layer 130 is composed of a glass-phase carbon material, which can reduce the carbon particles generated when the graphite element 120 is subjected to ion beam erosion by its own material characteristics, thereby reducing the semiconductor wafer. Process pollution.

As shown in FIG. 2, the energy purification module 100 can be configured in the ion implantation system 50 to independently control the deflection, deceleration, purification, and focusing of the ion beam so that the ion beam has uniformity and can be incident at a specific incident angle. . In particular, the energy purification module 100 can include an ion beam optical element (not shown) including an upper electrode set disposed over the ion beam and a lower electrode set disposed below the ion beam. The upper electrode set and the lower electrode set can be stationary and have a fixed position. The potential difference between the upper electrode set and the lower electrode set can also vary along the central ion beam trajectory to reflect the energy of the ion beam at each point along the central ion beam trajectory. Thus, the energy storage module 100 can be used to independently control the deflection, deceleration, and/or focus of the ion beam as described above. In the present embodiment, the ion beam can be directed through the graphite element 120 within the cavity 110 of the energy purification module 100 in the direction of the arrow in FIG.

3A and 3B are schematic views of a partial surface of the graphite element of Fig. 1. Please refer to FIG. 3A and FIG. 3B. In the present embodiment, the surface 121 of the graphite element 120 has a plurality of apertures 122. In addition, the apertures 122 extend from the surface 121 toward the interior of the graphite element 120 and extend to a depth of between about 5 millimeters (mil) and 10 millimeters. In general, when the apertures 122 on the surface 121 of the graphite element 120 are excessive, the surface 121 of the graphite element 120 appears to be insufficiently dense, making the graphite element 120 susceptible to impact and peeling off. Therefore, when the ion beam passes through the graphite element 120, the graphite element 120 is easily peeled off by the ion beam to generate carbon particles, and the carbon particles easily enter the wafer processing chamber 55 with the ion beam, thereby being implanted into the semiconductor crystal. Within the circle (not shown), the quality of the finished wafer is affected.

As shown in FIG. 3B, in the present embodiment, the surface of the graphite member 120 may be formed by an impregnation process to form the protective layer 130. Further, the protective layer 130 may be formed on the surface of the graphite member 120 and the apertures 122 described above, and may fill the space within the apertures 122. Further, as described above, the constituent material of the protective layer 130 of the present embodiment is, for example, glassy carbon. Since glass phase carbon is a non-graphitizable carbon that combines the properties of glass and ceramics, glass phase carbon has high temperature resistance, high hardness, smoothness, low friction, chemical resistance, and impermeability to gases and liquids.

In the present embodiment, the protective layer 130 formed of the glass phase carbon on the surface 121 of the graphite member 120 has characteristics of high hardness and erosion resistance, so that the structural density and hardness of the surface 121 of the graphite member 120 can be effectively improved. Therefore, the surface 121 covered by the protective layer 130 is less likely to be eroded by the ion beam to fall off and form carbon particles. Furthermore, by filling the protective layer 130 in the voids 122, the number of voids 122 of the surface 121 of the graphite element 120 can be further reduced. The reduction in the number of voids 122 contributes to the compactness of the surface 121 and the increase in hardness. Therefore, in the present embodiment, the number of carbon particles in the cavity 110 of the energy purification module 100 can be effectively reduced by more than 70%. Therefore, the life time of the energy purification module 100 can be further increased by more than one time.

In summary, in various embodiments of the novel creation, the energy purification module can be disposed in the ion implantation system to filter the contaminating particles in the ion beam. The energy purification module can have a plurality of graphite elements disposed in a cavity thereof, and a protective layer can be formed on the surface of the graphite element. In various embodiments of the novel creation, the protective layer is composed, for example, of a glassy carbon material, and the protective layer can be filled in the surface and pores of the graphite element to reduce the number of pores on the surface of the graphite element and to increase the graphite element. The compactness, hardness and mechanical strength of the surface. Therefore, when the ion beam passes through the cavity of the energy purification module, the ion beam can be reduced to peel off the surface of the graphite component, thereby reducing the amount of carbon particles generated by the energy purification module to avoid carbon particle entry. The wafer processing chamber of the ion implantation system allows carbon particles to be implanted into the wafer, so that the quality of the finished wafer is affected.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the novel creation, and any person skilled in the art can make some changes without departing from the spirit and scope of the novel creation. Retouching, the scope of protection of this new creation is subject to the definition of the scope of the patent application attached.

50‧‧‧Ion Implant System
51‧‧‧Ion source
52‧‧‧90 degree analytical magnet component
53‧‧‧Ion deceleration module
54‧‧.55 degree analysis of magnet components
55‧‧‧ Wafer processing chamber
100‧‧‧Energy purification module
110‧‧‧ cavity
120‧‧‧Graphite components
121‧‧‧ surface
122‧‧‧ pores
130‧‧‧Protective layer

Figure 1A is a schematic illustration of the ion implant system of the present invention. FIG. 1B is a schematic diagram of an energy purification module according to an embodiment of the present invention. 2 is a top plan view of the energy purification module of FIG. 1B. 3A and 3B are schematic views of a partial surface of the graphite element of Fig. 1.

100‧‧‧Energy purification module

110‧‧‧ cavity

120‧‧‧Graphite components

130‧‧‧Protective layer

Claims (5)

An energy purification module, which is suitable for use in an ion implantation system, comprising: a cavity; a plurality of graphite elements disposed in parallel with each other in the cavity, wherein the surfaces of the graphite elements respectively have a plurality of apertures; A protective layer is formed on the surfaces of the graphite elements, respectively, and is filled in the pores. The energy purification module of claim 1, wherein the protective layer comprises a glass phase carbon. The energy purification module of claim 1, wherein the pores of the graphite elements extend inwardly from the surface of the graphite elements to a depth of 5 mils to 10 mils. The energy purification module of claim 1, wherein the protective layer is formed by an impregnation process. The energy purification module of claim 1, wherein the graphite elements comprise a plurality of graphite electrode rods.