TWM541108U - Structure of tungsten-based ion implantation machine for tungsten carbide coating - Google Patents

Description

Tungsten carbide coated tungsten ion implanter structure

This creation is about the structure of tungsten ion implanter for tungsten carbide coating, especially the structure that uses tungsten carbide coating to improve the service life of ion implanter.

The current poor design of ion implanters often leads to gas intrusion in the ion chamber to create a coating that causes arcing.

The main cause of the adhesion layer is that about 80% of the gas generated inside the arc chamber of the ion can not be dissociated and diffused into the source chamber, and the electron beam from the arc chamber is separated. (Beam) The nearest electrode at the emitter end is exposed to the undissociated gas, causing the gas dissociated at this position to adhere to the surface of the high-voltage insulator to form an adhesion layer, so that the effect of insulation is lowered.

Therefore, how to maintain the life and durability of the ion implanter and other issues has become a topic of research for all parties. It can be seen that there are still many shortcomings in the above existing methods, which is not a good design and needs to be improved.

The present invention provides a tungsten ion plating machine structure of tungsten carbide coating, comprising a main body layer and a tungsten carbide coating layer, wherein the main body layer is a compound containing tungsten metal or pure tungsten metal And a tungsten carbide coating layer disposed on the main layer.

The present invention provides an ion implantation machine having a tungsten ion plating machine structure with a tungsten carbide coating, which mainly comprises a main body portion and an ion chamber. The ion chamber is connected to the main body and receives the voltage provided by the main unit, the vacuum is maintained in the ion chamber, and further includes a bottom plate, four partitions, four side plates, and an ion chamber outlet. The bottom plate is connected with the main body portion, the bottom edges of the four baffles are connected to the bottom plate, the two sides of each baffle are connected with two adjacent baffles, and one side of each baffle is further provided with a side plate and an ion chamber outlet. It is connected to the top edge of each partition.

This creation provides another ion implanter with a tungsten ion implanted tungsten ion implanter structure, which mainly includes a host portion and an ion chamber. The ion chamber is connected to the host portion and receives the voltage provided by the host portion, and the vacuum chamber further maintains a vacuum and further includes a bottom plate, four partitions, four side plates, a first ion chamber outlet, and a second ion chamber outlet. The bottom plate is connected to the main body portion, and the bottom edges of the four baffles are connected to the bottom plate, and the two sides of each baffle are connected with two adjacent baffles, and one side of each baffle is further provided with a side plate and a first ion The chamber outlet is connected to the top edge of each of the partitions, and the second ion chamber is disposed above the outlet of the first ion chamber.

Compared with the prior art, in addition to the hardness of the tungsten metal compound or the pure tungsten metal of the main layer, the surface has a tungsten carbide coating layer, which is particularly suitable for use in ion implantation machines with high ion bombardment sites. The components, and in a high temperature working environment (500 ~ 900 ° C) containing a fluorine compound gas or an oxygen-containing gas, such as an ion chamber, an ion chamber outlet, etc., have a service life of 2 to 5 times that of the prior art.

In summary, this creation is not only innovative in terms of space type, but also can enhance the above-mentioned multiple functions compared with the customary items. It should fully comply with the statutory invention patent requirements of novelty and progressiveness, and apply for it according to law. Approving the invention patent application for this invention, in order to invent, To the sense of virtue.

100‧‧‧ body layer

110‧‧‧Tungsten carbide coating

200‧‧‧Ion implanter

210‧‧‧Host Department

220‧‧‧Ion chamber

221‧‧‧floor

222‧‧ ‧ partition

223‧‧‧ side panels

230‧‧‧Ion chamber outlet

300‧‧‧Ion implanter

310‧‧‧Host Department

320‧‧‧Ion chamber

321‧‧‧floor

322‧‧‧Baffle

323‧‧‧ side panels

330‧‧‧First ion chamber outlet

340‧‧‧Second ion chamber outlet

FIG. 1 is a schematic cross-sectional view showing the structure of a tungsten ion implanter of a tungsten carbide coating.

Figure 2 is a schematic view showing the structure of the ion implanter of the present invention.

Figure 3 is a schematic view showing the structure of another ion implanter of the present invention.

In order to understand the technical characteristics, content and advantages of the creation and the effects that can be achieved, the authors will use the creation of the drawings in detail with reference to the drawings, and the drawings used therein, The subject matter is only for the purpose of illustration and supplementary instructions. It is not necessarily the true proportion and precise configuration after the implementation of the original creation. Therefore, the proportions and configuration relationships of the attached drawings should not be interpreted or limited in the actual implementation scope. First described.

Referring to FIG. 1 , a schematic diagram of a tungsten ion implanter structure of the tungsten carbide coating according to the present invention includes a main body layer 100 and a tungsten carbide coating layer 110 , wherein the main body layer 100 is a tungsten-containing metal. The compound or pure tungsten metal, and the tungsten carbide coating layer 110 provided on the outer surface of the main body layer 100 have characteristics against corrosion of a fluorine-containing compound gas or an oxygen-containing gas.

Please refer to FIG. 2 , which is a schematic diagram of the structure of the ion implanter of the present invention. As shown, the ion implanter 200 mainly includes a main body portion 210 and an ion chamber 220 . The ion chamber 220 is connected to the host unit 210 and receives the voltage provided by the host unit 210. The ion chamber 220 maintains a vacuum and further includes a bottom plate 221, four partition plates 222, four side plates 223, and an ion chamber outlet. 230. The bottom plate 221 is connected to the main body portion 210, and the bottom edges of the four partition plates 222 are connected to the bottom plate 221, and the two sides of each partition plate 222 are connected to two adjacent partition plates 222, and one side of each partition plate 222 is further disposed. The side plate 223 and the ion chamber outlet 230 are connected to the top edge of each of the partition plates 222. The components of the ion chamber 220 are highly resistant to ion bombardment by the tungsten carbide coating layer 110, and the service life is existing in the prior art. 2 to 5 times the technology.

Please refer to FIG. 3 , which is a schematic diagram of another ion implanter structure of the present invention. As shown, the ion implanter 300 mainly includes a main body portion 310 and an ion chamber 320 . The ion chamber 320 is connected to the host portion 310 and receives the voltage provided by the host portion 310. The ion chamber 320 maintains a vacuum and further includes a bottom plate 321, four partitions 322, four side plates 323, a first ion chamber outlet 330, and Second ion chamber outlet 340. The bottom plate 321 is connected to the main body portion 310, and the bottom edges of the four partition plates 322 are connected to the bottom plate 321 . The two sides of each partition plate 322 are connected to two adjacent partition plates 322, and one side of each partition plate 322 is further disposed. A side plate 323, and a first ion chamber outlet 330 are connected to the top edge of each of the partition plates 322, and a second ion chamber outlet 340 is further disposed above the first ion chamber outlet 330, wherein each element of the ion chamber 320 is The tungsten carbide coating layer 110 has a high resistance to ion bombardment and has a service life of 2 to 5 times that of the prior art.

In summary, this creation is not only innovative in terms of technical thinking, but also has many of the above-mentioned functions that are not in the traditional methods of the past. It has fully complied with the statutory invention patent requirements of novelty and progressiveness, and applied for it according to law. The bureau approved the application for the invention patent, in order to invent the invention, to the sense of virtue.

100‧‧‧ body layer

110‧‧‧Tungsten carbide coating

Claims (3)

A tungsten tungsten ion implanter structure comprising: a main body layer, the main body layer is a tungsten metal-containing compound or a pure tungsten metal; and a tungsten carbide coating layer, wherein the tungsten carbide coating layer is disposed on the Above the main layer. An ion implanter using a tungsten ion implanter structure as described in claim 1 of the patent application, comprising: a host portion for supplying a voltage; and an ion chamber for the ion chamber Connecting to the main body and maintaining a vacuum, wherein the ion chamber comprises: a bottom plate connected to the main body portion; and four partitions, wherein each of the partitions has a bottom edge connected to the bottom plate, and each of the partitions The two sides are respectively connected to the adjacent partition; an ion chamber outlet, wherein the ion chamber outlet is connected to the top edge of each of the partitions; and four side plates, wherein each of the side plates respectively corresponds to Separator connection. An ion implanter using a tungsten ion implanter structure as described in claim 1 of the patent application, comprising: a host portion for supplying a voltage; and an ion chamber for the ion chamber Connecting to the main body and maintaining a vacuum, wherein the ion chamber comprises: a bottom plate connected to the main body portion; and four partitions, wherein each of the partitions has a bottom edge connected to the bottom plate, and each of the partitions The two sides are respectively connected to the adjacent partition; a first ion chamber outlet, wherein the ion chamber outlet is connected to a top edge of each of the separators; a second ion chamber outlet, wherein the second ion chamber outlet is disposed above the first ion chamber outlet; Four side panels, wherein each of the side panels is connected to a corresponding one of the partitions.