TWM527153U - Wafer edge measuring module - Google Patents

Description

Wafer edge measurement module (1)

This creation is about a wafer edge measurement module (1), especially an integrated linear scan camera and dark field light field, which can also improve the edge speed of the wafer and detect defects in real time.

According to the past, for the mass production of wafers, most of them use a lot of manpower, using many different gauges, and manually measuring the work. This kind of manual detection method, in addition to the shortcomings of high cost of human activities, the work of detecting by the human eye is not only boring, the eyes are easily exhausted, and the turnover rate of personnel is too high, the stability of quality is also The problem worthy of discussion, therefore, gradually replaces artificial vision with machine vision. In the aspect of industrial camera, it is distinguished by the principle of image acquisition. It mainly includes the technique of line scan and face line scanning, which is a picture element The dimensions are arranged in a line, and only one column of image data can be obtained at a time when the image is taken. When the relative motion between the industrial camera and the object being photographed is generated, two-dimensional image data is obtained; the upper line scanning type is implanted in The image sensing elements of industrial cameras use a two-dimensional matrix. In terms of illumination geometry of machine vision, the illumination source can be divided into a bright field source and a dark field source, and the bright field source is directly reflected into the lens by the source; the dark field source is not reflected directly into the lens.

Sub-press, wafer measurement is mainly in the effective area, not in the invalid area, usually the wafer edge is an invalid area, not the focus of measurement, but due to the gradual vitrification and enlargement of the wafer material, if the edge of the wafer appears Defects are processed, transferred, and transported in multiple process steps of lithography, diffusion, cleaning, chemical mechanical polishing, and chemical vapor deposition. When subjected to slight physical collision, the wafer is easily broken from the ineffective area. The effective area, so the defects at the edge of the wafer has quietly become a defect of limited production.

Therefore, wafer edge measurement has not been taken seriously, but how to integrate mechanical vision industrial camera technology and illumination geometry technology to effectively improve the measurement of wafer edge speed and the immediate detection of defects. Therefore, there will be more room for improvement.

The main purpose of this creation is to provide a wafer edge measurement module (1) that integrates the line-scanning and illumination geometry dark field light sources of industrial cameras to solve the problem of prior art measurement of the edge of the wafer. It has the effect of improving the edge speed of the wafer and detecting defects in real time.

In order to achieve the above effects, the structural features of the present invention include: at least one linear scanning camera is disposed at a predetermined portion of the edge of the wafer for linearly scanning pixels of the edge of the wafer; and at least one light source component group, the light source is projected to To linearly scan the pixels on the edge of the wafer to form a dark field source, so that all pixels of the edge of the wafer exhibit a low gray value region, and when the linear scan camera linearly scans a portion of the edge of the wafer, the pixel is high. In the case of the gray value area, the high gray value area is measured as a decfect of the edge of the wafer.

According to the foregoing feature, the light source component group is composed of a first and second light source component, which is close to the edge of the wafer and projects the light source forward, and the first and second light source components are linearly scanned. The camera is a central reference, symmetrical, and the sides are inclined forward so that the first and second light source elements exhibit an angle (θ) that is not 180° parallel, and the angle (θ) is 60° to 160°. between.

According to the foregoing feature, the linear scanning camera is composed of an upper, middle and lower linear scanning camera, which are respectively arranged at a predetermined position above, at the middle and below the edge of the wafer for linearly scanning the wafer. The pixels above the edge of the bevel edge, the middle edge and the lower bevel edge, and three light source component groups, respectively, the light source is projected onto the edge of the bevel edge, the middle edge and the lower bevel edge of the edge of the wafer to be linearly scanned. According to, different dark field sources are formed.

According to the foregoing features, a screen may be further included to observe defects of the edge of the wafer.

According to the foregoing feature, a defect judging unit is further included, and the defect of the edge of the wafer is automatically determined.

By means of the above-mentioned technical means, the creation selects the fast scanning of the linear scanning camera, and integrates with the dark field light source of the light source component group, excluding the non-fast scanning facial line scanning type, and the non-fast contrasting bright field light source, It can replace manual measurement and application of wafer edges, which has the effect of improving the edge speed of the wafer and detecting defects in real time.

First, referring to FIG. 1 and FIG. 2, the preferred embodiment of the wafer edge measuring module (1) of the present invention comprises: at least one linear scanning camera 10, which is set at the edge of the wafer (E). The linear scanning camera 10 is composed of an upper, middle and lower linear scanning cameras 11, 12, 13 A predetermined position above, at the middle end and below the edge (E) of the wafer for linearly scanning the bevel edge (E ₁ ), the middle end edge (E ₂ ) and the lower edge of the wafer edge (E) The pixel (P) of the bevel edge (E ₃ ), therefore, the linear scanning technology of the industrial camera can quickly scan the edge of the wafer (E) through the lens projected on the sensing element, but is not limited to this.

At least one light source component group 20, the light source is projected onto the pixel to be linearly scanned on the edge (E) of the wafer, thereby forming a dark field light source (F), and all the pixels (P) of the wafer edge (E) Presenting a low gray value region (P ₁ ), when the linear scan camera linearly scans a portion of the pixel (P) of the wafer edge (E) to present a high gray value region (P ₂ ), the height is measured The gray value area (P ₂ ) is a defect (D) of the wafer edge (E). In this embodiment, the light source element group 20 is composed of a first and second light source elements 21 and 22, which are close to each other. The wafer edge (E) and the light source are projected forward, and the first and second light source elements 21, 22 are symmetrical with the linear scan camera 10 as a central reference, so that both sides are inclined forward. The first and second light source elements 21, 22 exhibit an angle (θ) that is not 180° parallel, and the angle (θ) is between 60° and 160°. Therefore, the low gray value area is utilized. ₁ ) The difference (D) of the edge (E) of the wafer can be found in time from the image difference of the high gray value region (P ₂ ), but is not limited thereto.

Further, with three light source element groups 20, the respective light sources are projected onto the bevel edge (E ₁ ), the middle end edge (E ₂ ) and the lower bevel edge (E ₃ ) above the edge (E) of the wafer to be linearly scanned. Pixels (P), according to which different dark field sources (F) are formed.

In addition, a hardware device including a screen 30 may be included to observe the defect (D) of the edge (E) of the wafer, or may further include a software device of the defect determining unit 40, which automatically determines the edge of the wafer (E) The defect (D) is analyzed and the image is differentiated, but is not limited thereto.

By means of the above-mentioned technical means, the present invention effectively integrates the fast scanning of the linear scanning camera 10 and the dark field light source of the light source component group 20, thereby not only improving the edge (E) speed of the wafer but also detecting the defect (D) in real time. At the same time, it can be combined with a hardware device or a software device to improve the defect (D) identification rate of the edge (E) of the wafer, and correctly determine the type of the defect (D), and perform different processing according to different defects (D) to achieve manpower. Optimization of cost and equipment costs.

In summary, the technical means revealed in this creation are indeed new patents such as "novelty", "progressiveness" and "available for industrial use". German sense.

However, the drawings and descriptions disclosed above are only preferred embodiments of the present invention, and modifications or equivalent changes made by those skilled in the art in accordance with the spirit of the present invention should still be included in the scope of the patent application.

10‧‧‧Linear Scan Camera
11‧‧‧Upper linear scanning camera
12‧‧‧ Linear Scanning Camera
13‧‧‧Lower linear scanning camera
20‧‧‧Light source component group
21‧‧‧First light source components
22‧‧‧Second light source components
30‧‧‧ screen
40‧‧‧Defect judgment unit
D‧‧‧ Defects
E‧‧‧ wafer edge
E ₁ ‧‧‧Upper bevel edge
E ₂ ‧‧‧ mid-end edge
E ₃ ‧‧‧ Lower bevel edge
F‧‧‧ dark field light source
P‧‧ ‧ pixels
P ₁ ‧‧‧Low gray value area
P ₂ ‧‧‧High gray value area θ‧‧‧ angle

Figure 1 is a schematic diagram of the edge of a linear scan wafer of the present author. Figure 2 is a schematic diagram of the wafer edge defects measured by this creation.

10‧‧‧Linear Scan Camera

11‧‧‧Upper linear scanning camera

12‧‧‧ Linear Scanning Camera

13‧‧‧Lower linear scanning camera

30‧‧‧ screen

40‧‧‧Defect judgment unit

E‧‧‧ wafer edge

E ₁ ‧‧‧Upper bevel edge

E ₂ ‧‧‧ mid-end edge

E ₃ ‧‧‧ Lower bevel edge

P‧‧ ‧ pixels

P ₁ ‧‧‧Low gray value area

Claims (5)

A wafer edge measuring module (1) comprising: at least one linear scanning camera mounted at a predetermined portion of a wafer edge for linearly scanning pixels of the edge of the wafer; and at least one light source component group, the light source thereof Projecting onto a pixel to be linearly scanned at the edge of the wafer to form a dark field source such that all pixels of the edge of the wafer exhibit a low gray value region, and the linear scan camera linearly scans a portion of the pixel at the edge of the wafer When a high gray value region is presented, the high gray value region is measured as a decfect of the wafer edge. The wafer edge measuring module (1) of claim 1, wherein the light source component group is composed of a first and second light source component, which is close to the edge of the wafer and causes the light source to project forward. And the first and second light source elements are centered on the linear scanning camera, and are symmetrically inclined to tilt both sides forward, so that the first and second light source elements exhibit an angle other than 180° parallel (θ) And the angle (θ) is between 60° and 160°. The wafer edge measuring module (1) according to claim 1 or 2, wherein the linear scanning camera is composed of an upper, middle and lower linear scanning camera, which are respectively disposed above the edge of the wafer. a predetermined portion at the middle end and the lower portion for linearly scanning pixels of the bevel edge, the middle end edge, and the lower bevel edge of the edge of the wafer, and respectively, the three light source component groups are respectively projected to the desired linear scan. The pixels of the bevel edge, the middle end edge and the lower bevel edge above the edge of the wafer are used to form different dark field sources. The wafer edge measurement module (1) according to claim 3 further includes a screen for observing defects of the edge of the wafer. The wafer edge measurement module (1) according to claim 3 further includes a defect determination unit that automatically determines defects of the edge of the wafer.