TWM496842U - Protection sheet for laser cutting - Google Patents

Protection sheet for laser cutting Download PDF

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TWM496842U
TWM496842U TW103219059U TW103219059U TWM496842U TW M496842 U TWM496842 U TW M496842U TW 103219059 U TW103219059 U TW 103219059U TW 103219059 U TW103219059 U TW 103219059U TW M496842 U TWM496842 U TW M496842U
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laser cutting
protective sheet
water
crosslinking agent
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TW103219059U
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Chinese (zh)
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yong-ji Cai
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Gta Material Co Ltd
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Description

雷射切割用保護片Laser cutting protection sheet

本創作係關於一種雷射切割用保護片,尤指一種含有聚乙烯醇及戊二醛之雷射切割用保護片。The present invention relates to a protective sheet for laser cutting, and more particularly to a protective sheet for laser cutting containing polyvinyl alcohol and glutaraldehyde.

半導體晶圓具層合結構,其包含層間絕緣膜及功能性膜堆疊於半導體基板(如,矽)上,而晶圓於切割製程中,於基板上實施與形成各種電路,並且經由表面處理之後,切斷分離(切割)半導體基板後,製造出元件小片(例如半導體元件等);其中切斷分離製程係藉由沿著其界道(street)之邊界區切割晶圓,使分別設置之電子元件分離,而達到製程目的。但隨著半導體裝置整合度增加且界道寬度變窄,使切割之精準度隨之增加,伴隨而來的熱效應問題(切割道因熱而崩裂、破片等)成為雷射切割製程中之瓶頸。The semiconductor wafer has a laminated structure including an interlayer insulating film and a functional film stacked on a semiconductor substrate (eg, germanium), and the wafer is implemented and formed on the substrate in a cutting process, and after being processed through the surface After cutting off (cutting) the semiconductor substrate, a component chip (for example, a semiconductor component or the like) is manufactured; wherein the cutting and separating process is performed by cutting the wafer along a boundary region of a street thereof to separately set the electrons The components are separated to achieve the process. However, as the integration degree of the semiconductor device increases and the width of the boundary is narrowed, the precision of the cutting increases, and the accompanying thermal effect problem (the cracking of the cutting path due to heat, fragmentation, etc.) becomes a bottleneck in the laser cutting process.

晶圓切割製程從利用刀片切割晶圓,演變為目前典型的雷射切割製程;係為先沿著界道施以雷射光,藉此形成與切割刀的切割邊緣寬度相稱的溝槽,再用刀片切割晶圓。然而,雷射光沿著晶圓的界道照射時,所產生之熱能被晶圓吸收,導致熱能累積於晶圓上,衍生出切割製程中無可避免之問題。然而,晶圓之層合結構中最上層位置的絕緣膜;其主要材料為聚醯亞胺(polyimide),於晶圓雷射切割製程中容易破裂或損害。且熱能易導致晶圓基材的矽熔解或熱分解,因而產生矽蒸氣等問題,凝結並沉積在晶圓表面上。因此,針對切割晶圓時,若晶圓之保護膜不具耐熱性,則易導致保護膜破裂,而使晶圓切割所產生的噴濺物滲入破裂膜的空隙,由於這些殘留物為非水溶性,當沾附於晶圓表面上,無法藉由水沖洗掉而成為晶圓缺陷。The wafer dicing process has evolved from a wafer-cut wafer to a typical laser-cutting process; it is first applied with laser light along the boundary to form a trench commensurate with the cutting edge width of the dicing blade. The blade cuts the wafer. However, when the laser light is irradiated along the boundary of the wafer, the generated thermal energy is absorbed by the wafer, causing thermal energy to accumulate on the wafer, which leads to an inevitable problem in the cutting process. However, the insulating film at the uppermost position in the laminated structure of the wafer; its main material is polyimide, which is easily broken or damaged in the wafer laser cutting process. Moreover, thermal energy is liable to cause melting or thermal decomposition of the wafer substrate, thereby causing problems such as vaporization, condensation, and deposition on the surface of the wafer. Therefore, when the wafer is diced, if the protective film of the wafer is not heat-resistant, the protective film is easily broken, and the splatter generated by the wafer dicing penetrates into the void of the rupture film, since these residues are not water-soluble. When it is attached to the surface of the wafer, it cannot be washed away by water to become a wafer defect.

近年來,發展出僅利用雷射切割晶圓之製程,因其可作為精密切割方法而備受矚目,該方法所造成之熱損害較少且可實施高精密加工。然而,即使使用此方法,因雷射光的熱度可能使晶圓之絕緣膜發生不良分層。此外,因熱產生之矽蒸氣煙霧,亦可能累積於分層狀態的絕緣膜與晶圓的上表面間,當清洗晶圓的絕緣膜時,此煙霧沉積物將無法去除,而殘留成為缺陷,造成晶圓上表面污染的問題。In recent years, a process of cutting a wafer using only laser has been developed, and it has been attracting attention as a precision cutting method, which causes less thermal damage and can perform high-precision processing. However, even with this method, the thermal insulation of the laser light may cause poor delamination of the insulating film of the wafer. In addition, vapor fumes generated by heat may also accumulate between the insulating film in a layered state and the upper surface of the wafer. When the insulating film of the wafer is cleaned, the aerosol deposit cannot be removed, and the residue becomes a defect. The problem of surface contamination on the wafer.

已知用於解決此問題之技術,例如TW 200631086 A號專利揭示一種雷射切割用保護膜劑,其包含一種溶液,此溶液有水溶性樹脂及至少一種選自水溶性染料、水溶性著色劑及水溶性紫外線吸收劑之水溶性雷射光吸收劑溶解於其中,其主要係將如聚乙烯醇、聚乙二醇或纖維素等水溶性樹脂,塗覆於晶圓表面以形成保護膜,然後再實施雷射光之切割製程。因此,晶圓表面受到保護膜之保護,即使矽蒸氣或基板受到雷射照射影響之熱分解產物等殘留物,僅會散佈或凝結沉積在保護膜的表面上,不會沉積在晶片面上。此外,因為保護膜為水溶性,其可藉水洗而輕易移除,亦即,以水清洗保護膜的同時,可清除保護膜上的殘留物。A technique for solving this problem is known. For example, TW 200631086 A discloses a protective film for laser cutting comprising a solution having a water-soluble resin and at least one selected from the group consisting of water-soluble dyes and water-soluble colorants. And a water-soluble laser light absorber of a water-soluble ultraviolet absorber dissolved therein, which mainly applies a water-soluble resin such as polyvinyl alcohol, polyethylene glycol or cellulose to a surface of the wafer to form a protective film, and then Then the laser light cutting process is implemented. Therefore, the surface of the wafer is protected by the protective film, and even the residue such as the thermal decomposition product of the vapor or the substrate subjected to the laser irradiation is only scattered or coagulated and deposited on the surface of the protective film, and is not deposited on the wafer surface. Further, since the protective film is water-soluble, it can be easily removed by washing with water, that is, the protective film can be washed with water while removing the residue on the protective film.

此外,TW I399402號專利揭露一種用於晶圓切割之保護膜組成物,其包括至少一選自聚乙基噁唑啉及聚乙烯吡咯烷酮所組成之群組之樹脂、至少一選自水溶性樹脂及酒精性單體所組成之群組之成分、以及一溶劑,例如水或水與有機溶劑之混合物。因此,用於晶圓切割之保護膜組成物具有高熱穩定性,可防止因切割製程中雷射照射而產生熱解交聯材料,且對晶圓顯示高黏著力,可防止雷射晶圓切割製程中保護膜的分層。再者,該保護膜組成物可形成具適當硬度之保護膜,因此使晶圓切割時,保護膜並不會有破裂的問題。In addition, the TW I399402 patent discloses a protective film composition for wafer dicing, comprising at least one resin selected from the group consisting of polyethyloxazoline and polyvinylpyrrolidone, at least one selected from the group consisting of water-soluble resins. And a component of the group consisting of alcoholic monomers, and a solvent such as water or a mixture of water and an organic solvent. Therefore, the protective film composition for wafer cutting has high thermal stability, prevents pyrolysis cross-linked materials due to laser irradiation in the cutting process, and exhibits high adhesion to the wafer, preventing laser wafer cutting The delamination of the protective film during the process. Further, the protective film composition can form a protective film having a suitable hardness, so that the protective film does not have a problem of cracking when the wafer is diced.

然而,上述之二種方法均係使用水溶性樹脂,通常具有較差之熱穩定性,於晶圓之雷射切割製程中照射雷射後將產生內熱,水溶性樹脂若使用之分子量不夠高,可能會受熱而熱解,對於基材保護效果則會有限。However, both of the above methods use a water-soluble resin, which generally has poor thermal stability. When the laser is irradiated in a laser laser cutting process, internal heat is generated. If the molecular weight of the water-soluble resin is not high enough, it may be It will be pyrolyzed by heat and will have limited protection for the substrate.

因此,如何開發出具有高熱穩定性,且可防止切割製程中因雷射照射而產生熱解之保護膜組成物,進而應用該保護膜組成物製得雷射切割用保護片,乃是現階段晶圓製造產業亟欲解決之問題。Therefore, how to develop a protective film composition which has high thermal stability and can prevent pyrolysis due to laser irradiation in a cutting process, and further uses the protective film composition to obtain a protective sheet for laser cutting, which is the current stage The wafer manufacturing industry is eager to solve the problem.

鑒於上述現有技術的缺憾,創作人有感其未臻於完善,遂竭其心智悉心研究克服,憑其從事該項產業多年累積的經驗,研發出一種雷射切割用保護片。In view of the above-mentioned shortcomings of the prior art, the creator feels that he has not perfected it, exhausted his mind and researched and overcome it, and developed a laser protection sheet for his experience in the industry.

為達上述目的,本創作提供一種雷射切割用保護片,其包括:一基片;以及塗覆於該基片上之雷射切割用保護膜組成物所形成之保護層,該保護層厚度為100至5000 nm;其中該雷射切割用保護膜組成物,其特徵在於包含:(A)水溶性聚合物;以及(B)交聯劑;其中該(A)水溶性聚合物的重量平均分子量(Mw)係為10000~150000。In order to achieve the above object, the present invention provides a protective sheet for laser cutting, comprising: a substrate; and a protective layer formed by the composition of the protective film for laser cutting coated on the substrate, the protective layer having a thickness of 100 to 5000 nm; wherein the protective film composition for laser cutting comprises: (A) a water-soluble polymer; and (B) a crosslinking agent; wherein the weight average molecular weight of the (A) water-soluble polymer (Mw) is 10,000 to 150,000.

為達上述之雷射切割用保護膜組成物,其中該(A)水溶性聚合物的重量平均分子量(Mw) 為5000~150000,尤其以12500~125000最佳。本創作藉由添加交聯劑使高分子間交聯度提升,應用於雷射切割用保護膜時,具有高熱穩定性,並可使用較低分子量水溶性樹脂塗佈,設備機台較易清潔且塗佈可較均勻,可維持使雷射切割時的保護膜強度不衰減之功效。In order to achieve the above protective film composition for laser cutting, the weight average molecular weight (Mw) of the (A) water-soluble polymer is from 5,000 to 150,000, particularly preferably from 12,500 to 125,000. This work enhances the cross-linking degree of the polymer by adding a crosslinking agent. When applied to a protective film for laser cutting, it has high thermal stability and can be coated with a lower molecular weight water-soluble resin, and the equipment machine is easier to clean. Moreover, the coating can be relatively uniform, and the effect of not reducing the strength of the protective film during laser cutting can be maintained.

本創作所述之保護膜組成物塗佈於欲加工之晶圓表面上,所形成之厚度通常約100至5000 nm,尤以500~1500 nm最佳,因其添加交聯劑使高分子間交聯度提升,所使用之水溶性聚合物的重量平均分子量最低僅須為5000。此外,雷射切割用保護膜劑使用較高分子量之高分子時,組成物中須相對使用較多量之溶劑,於塗膜製程固化使溶劑蒸發後,容易造成塗膜厚度不均勻之情形。The protective film composition described in the present application is coated on the surface of the wafer to be processed, and the thickness is usually about 100 to 5000 nm, especially 500 to 1500 nm, because the crosslinking agent is added to make the polymer. The degree of crosslinking is increased and the water-soluble polymer used has a weight average molecular weight of at least 5,000. In addition, when a high molecular weight polymer is used as a protective film for laser cutting, a relatively large amount of solvent must be used in the composition, and it is easy to cause uneven thickness of the coating film after the coating process is cured to evaporate the solvent.

上述之組成物,其中該(A)水溶性聚合物之結構中至少含有親水性基團,該親水性基團係選自由羥基、環氧乙烷基、醯胺基、胺基、磺酸基、亞磺酸基、羧基及羰基所組成之群組。The composition according to the above aspect, wherein the (A) water-soluble polymer has at least a hydrophilic group selected from the group consisting of a hydroxyl group, an oxiranyl group, a decylamino group, an amine group, and a sulfonic acid group. a group consisting of a sulfinic acid group, a carboxyl group, and a carbonyl group.

根據本創作的一個實施例,該(A)水溶性聚合物係選自由聚乙二醇類、聚丙二醇類、聚環氧乙烷類、聚環氧丙烷類、聚醚酯類、聚乙烯基醇類、聚丙烯酸鈉類、聚丙烯醯胺類、聚乙烯基咯烷酮類、羧甲基纖維素、聚四亞甲基二醇類及聚醚酯類所組成之群組。According to an embodiment of the present invention, the (A) water-soluble polymer is selected from the group consisting of polyethylene glycols, polypropylene glycols, polyethylene oxides, polypropylene oxides, polyether esters, and polyvinyl alcohols. A group consisting of alcohols, sodium polyacrylates, polyacrylamides, polyvinylpyrrolidone, carboxymethylcellulose, polytetramethylene glycols, and polyetheresters.

上述之組成物,其中該(B)交聯劑係選自由異氰酸酯系交聯劑、三聚氰胺系交聯劑、環氧系交聯劑、丙烯酸酯系交聯劑、醛類或具有異氰酸酯基之(甲基)丙烯酸酯所組成之群組。The above composition, wherein the (B) crosslinking agent is selected from the group consisting of an isocyanate crosslinking agent, a melamine crosslinking agent, an epoxy crosslinking agent, an acrylate crosslinking agent, an aldehyde or an isocyanate group ( A group consisting of methyl acrylates.

上述之組成物,其中以100重量份之(A)水溶性聚合物為基準,該(B)交聯劑為1至10重量份,較佳為1至5重量份,添加過多時水溶性不佳,需使用熱水清潔設備去除保護膜。In the above composition, the (B) crosslinking agent is used in an amount of 1 to 10 parts by weight, preferably 1 to 5 parts by weight based on 100 parts by weight of the (A) water-soluble polymer, and the water solubility is not excessive when added. Good, you need to use a hot water cleaning device to remove the protective film.

上述之組成物,進一步包含選自由界面活性劑、消泡劑、流平劑及溶劑所組成之群組之添加物。界面活性劑選用聚氧乙烯脂類、聚氧乙烯醚類、山梨醇類、山梨醣醇酯類、聚醚類、脂肪醇烷氧基類、硬脂酸類、磺酸類、羧酸類、磷酸鹽類等非離子或陰離子界面活性劑單項或多項配合使用。消泡劑則選用甲基醚類、聚醚酯類、丙二醇類、環氧乙烷與環氧丙烷聚合物、低碳醇類、高級醇類等單項或多項配合使用。流平劑則為0.1至5重量份,選用聚氧乙烯醚類、醇醚類、醋酸鹽類、丙烯酸類、丙烯酸酯類、苯甲酮類、羥基類等單項或多項搭配使用。溶劑則選用醚類、低碳醇類、丙二醇類、醇醚類、羥酸類等單項或多項搭配使用。The above composition further comprises an additive selected from the group consisting of a surfactant, an antifoaming agent, a leveling agent, and a solvent. The surfactant is selected from the group consisting of polyoxyethylene esters, polyoxyethylene ethers, sorbitol, sorbitol esters, polyethers, fatty alcohol alkoxys, stearic acids, sulfonic acids, carboxylic acids, phosphates. The nonionic or anionic surfactants are used alone or in combination. The defoaming agent is used in combination with a single or a plurality of methyl ethers, polyether esters, propylene glycols, ethylene oxide and propylene oxide polymers, lower alcohols, and higher alcohols. The leveling agent is used in an amount of 0.1 to 5 parts by weight, and is used alone or in combination of polyoxyethylene ethers, alcohol ethers, acetates, acrylics, acrylates, benzophenones, and hydroxyl groups. The solvent is selected from the group consisting of ethers, lower alcohols, propylene glycols, alcohol ethers, and hydroxy acids.

本創作所述之雷射切割用保護膜組成物可以為液態之塗覆劑,亦或預先塗覆成型於一基片表面,進一步配合黏著劑層以貼附於晶圓表面,或使用較具黏著性之水溶性聚合物,不使用黏著劑層亦可貼附於晶圓表面,作為雷射切割用保護片而使用。The protective film composition for laser cutting described in the present invention may be a liquid coating agent, or may be pre-coated on a surface of a substrate, further combined with an adhesive layer to be attached to the surface of the wafer, or used more The adhesive water-soluble polymer can be attached to the surface of the wafer without using an adhesive layer, and can be used as a protective sheet for laser cutting.

本創作所述之雷射切割用保護膜組成物塗覆於欲加工之晶圓表面上,例如,該晶圓表面上已形成有多個格子圖案的界道所分隔之半導體晶片,之後乾燥此塗層,藉此形成保護膜。保護膜的厚度通常約100至5000 nm,尤以500~1500 nm最佳,因欲加工的晶圓表面具有許多凹處及凸處,界道係形成於這些凹處中,如果前述厚度過小,則凸處之保護膜的厚度會過小,使得碎物進入保護膜並沉積於晶片面上;另一方面,非必要的厚度並未有任何優點,僅會導致加工之後以水清洗耗時的缺點。The protective film composition for laser cutting described in the present application is coated on the surface of a wafer to be processed, for example, a semiconductor wafer on which a plurality of lattice patterns are formed on the surface of the wafer, and then dried. Coating, thereby forming a protective film. The thickness of the protective film is usually about 100 to 5000 nm, especially 500 to 1500 nm, because the surface of the wafer to be processed has many recesses and protrusions, and the boundary is formed in the recesses. If the thickness is too small, Then, the thickness of the protective film at the convex portion is too small, so that the debris enters the protective film and deposits on the wafer surface; on the other hand, the unnecessary thickness does not have any advantage, and only causes the disadvantage of time-consuming cleaning with water after processing. .

為進一步揭露本創作,以使本創作所屬技術領域者具有通常知識者可據以實施,以下謹以數個實施例進一步說明本創作。然應注意者,以下實施例僅係用以對本創作做進一步之說明,並非用以限制本創作之實施範圍,且任何本創作所屬技術領域者具有通常知識者在不違背本創作之精神下所得以達成之修飾及變化,均屬於本創作之範圍。In order to further disclose the present invention so that those skilled in the art can have a general knowledge, the present invention is further described in the following examples. It should be noted that the following examples are only for further explanation of the present invention, and are not intended to limit the scope of implementation of the present invention, and any person skilled in the art to which the present invention belongs can obtain the spirit of the present invention without violating the spirit of the present creation. The modifications and changes achieved are within the scope of this creation.

為充分瞭解本創作之目的、特徵及功效,茲藉由下述具體之實施例,對本創作做一詳細說明,說明如後:In order to fully understand the purpose, features and effects of this creation, a detailed description of the creation is given by the following specific examples, as follows:

下文將提供根據本創作之雷射切割用保護片所使用之雷射切割用保護膜之實施說明與下表:<TABLE style="BORDER-BOTTOM: medium none; BORDER-LEFT: medium none; BORDER-COLLAPSE: collapse; BORDER-TOP: medium none; BORDER-RIGHT: medium none; mso-border-alt: double windowtext 1.5pt; mso-yfti-tbllook: 1184; mso-padding-alt: 0cm 5.4pt 0cm 5.4pt; mso-border-insideh: 1.5pt double windowtext; mso-border-insidev: 1.5pt double windowtext" class="MsoTableGrid" border="1" cellSpacing="0" cellPadding="0"><TBODY><tr><td>   </td><td> 實施例1 (重量份) </td><td> 實施例2 (重量份) </td><td> 比較例1 (重量份) </td><td> 比較例2 (重量份) </td><td> 比較例3 (重量份) </td></tr><tr><td> PVA 分子量約13K </td><td> 20 </td><td> 0 </td><td> 20 </td><td> 20 </td><td> 0 </td></tr><tr><td> PVA 分子量約119K </td><td> 0 </td><td> 20 </td><td> 0 </td><td> 0 </td><td> 0 </td></tr><tr><td> PVA 分子量約250K </td><td> 0 </td><td> 0 </td><td> 0 </td><td> 0 </td><td> 20 </td></tr><tr><td> 戊二醛 </td><td> 1 </td><td> 1 </td><td> 0 </td><td> 15 </td><td> 1 </td></tr><tr><td> 測試結果 </td></tr><tr><td> 塗佈外觀 </td><td> 平整 </td><td> 平整 </td><td> 平整 </td><td> 平整 </td><td> 不平整 波浪紋 </td></tr><tr><td> 水溶性(1分鐘內) </td><td> 水溶 </td><td> 水溶 </td><td> 水溶 </td><td> 不水溶 </td><td> 不水溶 </td></tr><tr><td> 矽污沉積 </td><td> 無 </td><td> 無 </td><td> 微量 </td><td> 無 </td><td> 微量 </td></tr></TBODY></TABLE>The following is a description of the implementation of the protective film for laser cutting used in the protective sheet for laser cutting according to the present invention: <TABLE style="BORDER-BOTTOM: medium none; BORDER-LEFT: medium none; BORDER- COLDER-TOP: medium none; mso-border-alt: double windowtext 1.5pt; mso-yfti-tbllook: 1184; mso-padding-alt: 0cm 5.4pt 0cm 5.4pt; Mso-border-insideh: 1.5pt double windowtext; mso-border-insidev: 1.5pt double windowtext" class="MsoTableGrid" border="1" cellSpacing="0" cellPadding="0"><TBODY><tr>< Td> </td><td> Example 1 (parts by weight) </td><td> Example 2 (parts by weight) </td><td> Comparative Example 1 (parts by weight) </td><td > Comparative Example 2 (parts by weight) </td><td> Comparative Example 3 (parts by weight) </td></tr><tr><td> PVA molecular weight of about 13K </td><td> 20 </ Td><td> 0 </td><td> 20 </td><td> 20 </td><td> 0 </td></tr><tr><td> PVA molecular weight is about 119K </ Td><td> 0 </td><td> 20 </td><td> 0 </td><td> 0 </td><td> 0 </td></tr><tr>< Td> PVA molecular weight is about 250K </td><td> 0 </td><td> 0 </td><td> 0 </td><td> 0 < /td><td> 20 </td></tr><tr><td> glutaraldehyde</td><td> 1 </td><td> 1 </td><td> 0 </ Td><td> 15 </td><td> 1 </td></tr><tr><td> Test Results</td></tr><tr><td> Coating Appearance</td ><td> leveling</td><td> leveling</td><td> leveling</td><td> leveling</td><td> uneven wave pattern</td></tr><tr ><td> Water solubility (within 1 minute) </td><td> Water soluble</td><td> Water soluble</td><td> Water soluble</td><td> Not water soluble</td><td > 不水溶</td></tr><tr><td> sloping deposits</td><td> no </td><td> no </td><td> traces</td><td > None</td><td> Trace</td></tr></TBODY></TABLE>

實施例一Embodiment 1

製得下列組成之保護膜水溶液︰The following composition of the protective film aqueous solution was obtained:

首先取水溶性樹脂以聚乙烯醇(Polyvinyl alcohol, PVA)20 g (分子量約13K)溶解於100 ml水中,再添加交聯助劑戊二醛(Glutaraldehyde) 1 g。前述保護膜水溶液以旋轉塗佈的方式塗覆於矽晶圓上,並經乾燥於矽晶圓上形成厚度為 500~1300 nm的保護膜,再將塗佈完成之矽晶圓置於雷射加工設備上,進行雷射加工後使用純水洗去保護膜並觀察矽晶圓上雷射加工的周遭情況,無矽污沉積,且加工後的界面寬度與雷射設定參數直徑相仿,顯示並不受保護膜塗層影響。First, a water-soluble resin was dissolved in 100 ml of water (Polyvinyl alcohol, PVA) 20 g (molecular weight: about 13 K), and then 1 g of a crosslinking assistant Glutaraldehyde (Glutaraldehyde) was added. The aqueous solution of the protective film is applied to the germanium wafer by spin coating, dried on a germanium wafer to form a protective film having a thickness of 500 to 1300 nm, and the coated silicon wafer is placed on the laser. On the processing equipment, after laser processing, the protective film is washed with pure water and the surrounding conditions of the laser processing on the germanium wafer are observed, and there is no stain deposition, and the interface width after processing is similar to the diameter of the laser setting parameter, and the display is not It is affected by the protective film coating.

實施例二Embodiment 2

同實例一方式與重量份製備保護膜水溶液,但另改選用分子量約119K之聚乙烯醇。使用與實例一雷同的方式塗佈與評估保護膜,該保護膜可使用純水洗淨、無矽污沉積且加工後的界面寬度與雷射設定參數直徑相仿。An aqueous solution of a protective film was prepared in the same manner as in the first embodiment and in parts by weight, but a polyvinyl alcohol having a molecular weight of about 119 K was alternatively used. The protective film was coated and evaluated in the same manner as in Example 1. The protective film was washed with pure water, free of smear deposits, and the interface width after processing was similar to the diameter of the laser setting parameter.

比較例一Comparative example one

同實例一方式與重量份製備保護膜水溶液,但不添加交聯劑。使用與實例一雷同的方式塗佈與評估保護膜,得使用純水洗去該保護膜,但易觀察矽晶圓雷射加工的周遭有矽污沉積,且切割道有燒灼現象。An aqueous solution of the protective film was prepared in the same manner as in the first embodiment and in parts by weight, but no crosslinking agent was added. The protective film was coated and evaluated in the same manner as in the first example, and the protective film was washed with pure water, but it was easy to observe the smear deposition around the laser processing of the enamel wafer, and the dicing street was cauterized.

比較例二Comparative example two

同實例一方式與重量份製備保護膜水溶液,但交聯劑改為15 g。使用與實例一雷同的方式塗佈與評估保護膜,使用常溫之純水不易洗去該保護膜;需使用熱水,但雷射加工周遭無明顯切割道燒結物與殘留之現象。An aqueous solution of the protective film was prepared in the same manner as in the first embodiment and in parts by weight, but the crosslinking agent was changed to 15 g. The protective film is coated and evaluated in the same manner as in the first example, and the protective film is not easily washed away using pure water at normal temperature; hot water is used, but there is no obvious sinter and residual phenomenon in the laser processing.

比較例三Comparative example three

同實例一方式與重量份製備保護膜水溶液,但選用分子量約250K之聚乙烯醇,使用與實例一雷同的方式塗佈與評估保護膜,使用常溫之純水不易洗去保護膜;需使用熱水,且因膜厚不均勻造成切割道不平整、燒結物與矽污殘留增量現象。The aqueous solution of the protective film was prepared in the same manner as in the first embodiment, and the polyvinyl alcohol having a molecular weight of about 250 K was used. The protective film was coated and evaluated in the same manner as in the first example, and the protective film was not easily washed away by the pure water at normal temperature; Water, and due to uneven film thickness, the cutting path is uneven, and the sinter and smudging residue increase.

實施例三Embodiment 3

同實例一方式與重量份製備保護膜水溶液,將該保護膜水溶液塗覆於一基片之上,形成雷射切割用保護片。An aqueous solution of a protective film was prepared in the same manner as in the first embodiment and the parts by weight, and the aqueous solution of the protective film was applied on a substrate to form a protective sheet for laser cutting.

實施例三之雷射切割用保護片係如第1圖所示,該雷射切割用保護片1包括:一基片10;以及塗覆於該基片上之雷射切割用保護膜組成物所形成之保護層20,該保護層20之厚度為500至1500 nm。The protective sheet for laser cutting according to the third embodiment is as shown in Fig. 1. The protective sheet for laser cutting 1 comprises: a substrate 10; and a protective film composition for laser cutting coated on the substrate The protective layer 20 is formed, and the protective layer 20 has a thickness of 500 to 1500 nm.

如上所述,本創作完全符合專利三要件:新穎性、進步性和產業上的可利用性。以新穎性和進步性而言,本創作藉由提供一種雷射切割用保護膜組成物,藉由添加交聯劑使高分子間交聯度提升,應用於雷射切割用保護片時,具有高熱穩定性,並可使施用時較不易污染設備機台,且可維持使雷射切割時的保護片強度不衰減之功效;就產業上的可利用性而言,利用本創作所衍生的產品,當可充分滿足目前市場的需求。As mentioned above, this creation is fully in line with the three requirements of the patent: novelty, advancement and industrial applicability. In terms of novelty and advancement, the present invention provides a protective film composition for laser cutting by adding a crosslinking agent to increase the cross-linking degree between polymers, and is applied to a protective sheet for laser cutting. High thermal stability, and can make it less likely to contaminate the equipment machine during application, and can maintain the effect of not reducing the strength of the protective sheet during laser cutting; in terms of industrial availability, the products derived from the creation are utilized. When fully meet the needs of the current market.

本創作在上文中已以較佳實施例揭露,然熟習本項技術者應理解的是,該實施例僅用於描繪本創作,而不應解讀為限制本創作之範圍。應注意的是,舉凡與該實施例等效之變化與置換,均應設為涵蓋於本創作之範疇內。因此,本創作之保護範圍當以下文之申請專利範圍所界定者為準。The present invention has been disclosed in the above preferred embodiments, and it should be understood by those skilled in the art that the present invention is only intended to depict the present invention and should not be construed as limiting the scope of the present invention. It should be noted that variations and permutations equivalent to those of the embodiments are intended to be included within the scope of the present invention. Therefore, the scope of protection of this creation is subject to the definition of the scope of the patent application below.

1‧‧‧雷射切割用保護片
10‧‧‧基片
20‧‧‧保護層
1‧‧‧Protection film for laser cutting
10‧‧‧ substrates
20‧‧‧Protective layer

第1圖係為本創作實施例三之雷射切割用保護片Figure 1 is a protective sheet for laser cutting according to the third embodiment of the present invention.

1‧‧‧雷射切割用保護片 1‧‧‧Protection film for laser cutting

10‧‧‧基片 10‧‧‧ substrates

20‧‧‧保護層 20‧‧‧Protective layer

Claims (11)

一種雷射切割用保護片,其包括: 一基片;以及 塗覆於該基片上之雷射切割用保護膜組成物所形成之保護層,該保護層厚度為100至5000 nm; 其中該雷射切割用保護膜組成物,其特徵在於包含: (A)水溶性聚合物;以及 (B)交聯劑; 其中該(A)水溶性聚合物的重量平均分子量(Mw)係為10000~150000。A protective sheet for laser cutting, comprising: a substrate; and a protective layer formed by the composition of the protective film for laser cutting coated on the substrate, the protective layer having a thickness of 100 to 5000 nm; wherein the The protective film composition for shot cutting, comprising: (A) a water-soluble polymer; and (B) a crosslinking agent; wherein the weight average molecular weight (Mw) of the (A) water-soluble polymer is 10,000 to 150,000 . 如申請專利範圍第1項所述之雷射切割用保護片,其中該(A)水溶性聚合物的重量平均分子量(Mw)係為12500~125000。The protective sheet for laser cutting according to claim 1, wherein the (A) water-soluble polymer has a weight average molecular weight (Mw) of 12,500 to 125,000. 如申請專利範圍第1項所述之雷射切割用保護片,其中該(A)水溶性聚合物之結構中至少含有一親水性基團,該親水性基團係選自由羥基、環氧乙烷基、醯胺基、胺基、磺酸基、亞磺酸基、羧基及羰基所組成之群組。The protective sheet for laser cutting according to claim 1, wherein the (A) water-soluble polymer has at least one hydrophilic group in the structure, and the hydrophilic group is selected from the group consisting of a hydroxyl group and an epoxy group. A group consisting of an alkyl group, a decylamino group, an amine group, a sulfonic acid group, a sulfinic acid group, a carboxyl group, and a carbonyl group. 如申請專利範圍第1項所述之雷射切割用保護片,其中該(B)交聯劑係戊二醛。The protective sheet for laser cutting according to claim 1, wherein the (B) crosslinking agent is glutaraldehyde. 如申請專利範圍第1項所述之雷射切割用保護片,其中該(B)交聯劑係選自由異氰酸酯系交聯劑、三聚氰胺系交聯劑、環氧系交聯劑、丙烯酸酯系交聯劑或具有異氰酸酯基之(甲基)丙烯酸酯所組成之群組。The protective sheet for laser cutting according to claim 1, wherein the (B) crosslinking agent is selected from the group consisting of an isocyanate crosslinking agent, a melamine crosslinking agent, an epoxy crosslinking agent, and an acrylate system. A group consisting of a crosslinking agent or a (meth) acrylate having an isocyanate group. 如申請專利範圍第1至4項中任一項所述之雷射切割用保護片,其中以100重量份之(A)水溶性聚合物為基準,該(B)交聯劑為0.1至10重量份。The protective sheet for laser cutting according to any one of claims 1 to 4, wherein the (B) crosslinking agent is 0.1 to 10 based on 100 parts by weight of the (A) water-soluble polymer. Parts by weight. 如申請專利範圍第1至4項中任一項所述之雷射切割用保護片,其中該雷射切割用保護膜組成物進一步包含選自由界面活性劑、消泡劑、流平劑及溶劑所組成之群組之添加物。The protective sheet for laser cutting according to any one of claims 1 to 4, wherein the protective film composition for laser cutting further comprises a surfactant selected from a surfactant, an antifoaming agent, a leveling agent, and a solvent. Additions to the group formed. 如申請專利範圍第7項所述之雷射切割用保護片,其中該界面活性劑係選自由聚氧乙烯脂類、聚氧乙烯醚類、山梨醇類、山梨醣醇酯類、聚醚類、脂肪醇烷氧基類、硬脂酸類、磺酸類、羧酸類、磷酸鹽類等非離子或陰離子界面活性劑所組成之群組。The protective sheet for laser cutting according to claim 7, wherein the surfactant is selected from the group consisting of polyoxyethylene esters, polyoxyethylene ethers, sorbitol, sorbitol esters, and polyethers. A group of nonionic or anionic surfactants such as fatty alcohol alkoxys, stearic acids, sulfonic acids, carboxylic acids, phosphates, and the like. 如申請專利範圍第7項所述之雷射切割用保護片,其中該消泡劑係選自由甲基醚類、聚醚酯類、丙二醇類、環氧乙烷與環氧丙烷聚合物、低碳醇類、高級醇類所組成之群組。The protective sheet for laser cutting according to claim 7, wherein the antifoaming agent is selected from the group consisting of methyl ethers, polyether esters, propylene glycols, ethylene oxide and propylene oxide polymers, and low A group consisting of carbon alcohols and higher alcohols. 如申請專利範圍第7項所述之雷射切割用保護片,其中該流平劑為0.1至5重量份,係選自由聚氧乙烯醚類、醇醚類、醋酸鹽類、丙烯酸類、丙烯酸酯類、苯甲酮類、羥基類所組成之群組。The protective sheet for laser cutting according to claim 7, wherein the leveling agent is 0.1 to 5 parts by weight, selected from the group consisting of polyoxyethylene ethers, alcohol ethers, acetates, acrylics, and acrylics. A group consisting of esters, benzophenones, and hydroxyls. 如申請專利範圍第7項所述之雷射切割用保護片,其中該溶劑係選自由醚類、低碳醇類、丙二醇類、醇醚類、羥酸類所組成之群組。The protective sheet for laser cutting according to claim 7, wherein the solvent is selected from the group consisting of ethers, lower alcohols, propylene glycols, alcohol ethers, and hydroxy acids.
TW103219059U 2014-10-28 2014-10-28 Protection sheet for laser cutting TWM496842U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI560760B (en) * 2014-10-28 2016-12-01 Gta Electronics Co Ltd
CN117276199A (en) * 2023-11-20 2023-12-22 佛山市蓝箭电子股份有限公司 Cutting processing method of wafer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI560760B (en) * 2014-10-28 2016-12-01 Gta Electronics Co Ltd
CN117276199A (en) * 2023-11-20 2023-12-22 佛山市蓝箭电子股份有限公司 Cutting processing method of wafer

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