TWM491948U - Signal transformation device with adjustable optical band - Google Patents
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本新型是有關於一種訊號轉換裝置,特別是指一種調整光波段之訊號轉換裝置。The present invention relates to a signal conversion device, and more particularly to a signal conversion device for adjusting an optical band.
隨著工業技術與半導體製程不斷地演進,電子式成像系統已成為了成像技術中所廣泛應用的手段之一。電子式成像系統通常包含有一訊號轉換裝置,例如,電荷耦合元件(charge coupled device,CCD)或互補式金屬氧化物半導體場效電晶體(complementary metal oxide semiconductor field-effect transistor,CMOSFET)等感光裝置。一般而言,該感光裝置能接受並掃描來自外在的全波段光源,並將所吸收到的全波段光源轉換成一電訊號,再將此電訊號傳輸至後端的顯示器轉換成像。然而,該感光裝置所吸收的光源因涵蓋了人眼所無法看見的波段。因此,其所轉換的影像以人眼來觀察時,會具有色彩偏差的問題,其中,又以不可見光之波段中的紅外光線對影像的成像結果影響最大。As industrial technology and semiconductor processes continue to evolve, electronic imaging systems have become one of the widely used methods in imaging technology. Electronic imaging systems typically include a signal conversion device, such as a charge coupled device (CCD) or a complementary metal oxide semiconductor field-effect transistor (CMOSFET). In general, the photosensitive device can receive and scan an external full-band light source, convert the absorbed full-band light source into an electrical signal, and transmit the electrical signal to the rear-end display for image conversion. However, the light source absorbed by the photosensitive device covers a wavelength band that is invisible to the human eye. Therefore, when the converted image is observed by the human eye, there is a problem of color deviation, and the infrared light in the invisible light band has the greatest influence on the imaging result of the image.
為了解決上述紅外光線對成像的色彩偏差的問題,目前最為普遍的做法,是於成像系統中設置一紅外濾 光片(infrared cut-off filter),其能阻擋紅外光線而使其它波段的光源通過,進而有效防止紅外光線進入該感光裝置中。In order to solve the problem of the above-mentioned infrared light color deviation of imaging, the most common practice at present is to set an infrared filter in the imaging system. An infrared cut-off filter that blocks infrared light and allows light sources of other wavelength bands to pass, thereby effectively preventing infrared light from entering the photosensitive device.
參閱圖1,一種應用於電子式成像系統的現有的成像模組100,包括一基板11、一設置於該基板11上的感光裝置12、一設置於該感光裝置12之上的紅外濾光片13,及一設置於該濾光片13之上的透鏡組14。當具有全波段的入射光15由外界穿透該透鏡組14以經過該紅外濾光片13時,該具有全波段的入射光15中的紅外光線會被該紅外濾光片13所阻擋,以使一剩餘波段的光線則能順利地傳送至該感光裝置12,使該感光裝置12吸收該剩餘波段的光訊號以轉換為電訊號後,並供後端顯示器(圖未示)成像。Referring to FIG. 1 , a conventional imaging module 100 for an electronic imaging system includes a substrate 11 , a photosensitive device 12 disposed on the substrate 11 , and an infrared filter disposed on the photosensitive device 12 . 13, and a lens group 14 disposed on the filter 13. When the incident light 15 having the full wavelength band penetrates the lens group 14 from the outside to pass through the infrared filter 13, the infrared light in the incident light 15 having the full wavelength band is blocked by the infrared filter 13 to The light of a remaining band can be smoothly transmitted to the photosensitive device 12, so that the photosensitive device 12 absorbs the optical signal of the remaining band to be converted into an electrical signal, and is then imaged by a rear-end display (not shown).
對於一般的電子式成像系統(例如,監視裝置)而言,於光線充足之處,可吸收全波段的光線以藉由該紅外濾光片13過濾紅外光線後而成像;但於夜晚或光線不足之處,則必須開啟一外加的紅外光源,使紅外光源照射至欲觀測之物體上,再由監視裝置接收該物體反射回來的紅外光線,使該紅外光線傳送該感光裝置12而成像。由此可知,一般監視裝置的成像模組中,於夜晚或光線不足之處,還必須先行將該紅外濾光片13移除,才能使該感光裝置12接收到該紅外光線而成像。然而,前述夜晚成像的做法,會使得成像仍具有色彩偏差等缺點。For a general electronic imaging system (for example, a monitoring device), in a place where the light is sufficient, the full-band light can be absorbed to be imaged by filtering the infrared light by the infrared filter 13; but at night or insufficient light Wherein, an additional infrared light source must be turned on to cause the infrared light source to illuminate the object to be observed, and then the infrared light reflected from the object is received by the monitoring device, so that the infrared light is transmitted to the photosensitive device 12 for imaging. Therefore, in the imaging module of the general monitoring device, at night or in the case of insufficient light, the infrared filter 13 must be removed first, so that the photosensitive device 12 can receive the infrared light for imaging. However, the aforementioned imaging method at night may cause imaging to still have disadvantages such as color deviation.
因此,改良訊號轉換裝置,使一般電子式成像系統於光線充足與不足的地方,皆不會產生色彩偏差的影 像,是此技術領域的相關技術人員所待突破的課題。Therefore, the improved signal conversion device enables the general electronic imaging system to not produce color deviations in places where there is sufficient light and insufficient light. For example, it is a subject to be solved by relevant technical personnel in this technical field.
因此,本新型之目的,即在提供一種調整光波段之訊號轉換裝置。Therefore, the object of the present invention is to provide a signal conversion device for adjusting an optical band.
於是本新型調整光波段之訊號轉換裝置,於吸收一紅外光線及接受一偏壓後,能將該紅外光線轉換為一具有一預定波段的光線,並使該光線轉換成一電訊號,該調整光波段之訊號轉換裝置包含一感光單元,及一有機光電轉換單元。該感光單元包括一基板、多個設置於該基板上的感光元件,及一設置於該等感光元件上的絕緣保護層。該有機光電轉換單元設置於該感光單元的絕緣保護層之上,並包括一第一穿透電極層、一設置於該第一穿透電極層之上的第二穿透電極層、一設置於該第一穿透電極層與該第二穿透電極層之間的光電轉換膜層結構,及一光伏層(photovoltaic layer)。該光伏層設置於該光電轉換膜層結構與該第一穿透電極層及該第二穿透電極層兩者其中之一間。Therefore, the signal-switching device for adjusting the optical band of the present invention can convert the infrared light into a light having a predetermined wavelength band and absorb the light into an electrical signal after absorbing an infrared light and receiving a bias voltage. The band signal conversion device comprises a photosensitive unit and an organic photoelectric conversion unit. The photosensitive unit comprises a substrate, a plurality of photosensitive elements disposed on the substrate, and an insulating protective layer disposed on the photosensitive elements. The organic photoelectric conversion unit is disposed on the insulating protective layer of the photosensitive unit, and includes a first penetrating electrode layer, a second penetrating electrode layer disposed on the first penetrating electrode layer, and a a photoelectric conversion film layer structure between the first penetrating electrode layer and the second penetrating electrode layer, and a photovoltaic layer. The photovoltaic layer is disposed between the photoelectric conversion film layer structure and one of the first penetration electrode layer and the second penetration electrode layer.
本新型之功效在於:藉由該有機光電轉換單元的光伏層吸收紅外光線所產生的多對第二載子,並配合該偏壓的各對第一載子於光電轉換膜層結構中復合,從而產生該具有預定波段的光線後,供該等感光元件吸收並轉換成該電訊號,以使其於合併至一電子式成像系統且於夜晚或光線不足時,皆能改善成像的色彩偏差問題。The effect of the novel is that a plurality of pairs of second carriers generated by the infrared light of the organic photoelectric conversion unit absorb the infrared light, and the first pair of the first carrier coupled with the bias is combined in the photoelectric conversion film layer structure. Therefore, the light having the predetermined wavelength band is generated, and the light-receiving elements are absorbed and converted into the electrical signals so as to be combined into an electronic imaging system, and the color deviation problem of the imaging can be improved at night or when the light is insufficient. .
200‧‧‧紅外光線200‧‧‧Infrared light
2‧‧‧感光單元2‧‧‧Photosensitive unit
21‧‧‧基板21‧‧‧Substrate
22‧‧‧感光元件22‧‧‧Photosensitive elements
23‧‧‧絕緣保護層23‧‧‧Insulation protective layer
3‧‧‧有機光電轉換單元3‧‧‧Organic photoelectric conversion unit
31‧‧‧第一穿透電極層31‧‧‧First penetrating electrode layer
32‧‧‧第二穿透電極層32‧‧‧Second penetrating electrode layer
33‧‧‧光電轉換膜層結構33‧‧‧Photoelectric conversion film structure
331‧‧‧正型載子注入層331‧‧‧Positive carrier injection layer
332‧‧‧第一傳輸阻擋層332‧‧‧First transmission barrier
333‧‧‧發光層333‧‧‧Lighting layer
334‧‧‧第二傳輸阻擋層334‧‧‧second transmission barrier
335‧‧‧負型載子注入層335‧‧‧negative carrier injection layer
34‧‧‧光伏層34‧‧‧Photovoltaic layer
35‧‧‧透光性隔離元件35‧‧‧Transparent isolation components
36‧‧‧封裝元件36‧‧‧Package components
4‧‧‧透鏡單元4‧‧‧ lens unit
V‧‧‧偏壓V‧‧‧ bias
本新型之其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中:圖1是一剖視示意圖,說明一種應用於電子式成像系統的現有的成像模組;圖2是一側視示意圖,說明本新型調整光波段之訊號轉換裝置之一第一實施例;圖3是一側視示意圖,說明本新型調整光波段之訊號轉換裝置之一第二實施例;圖4是一側視示意圖,說明本新型調整光波段之訊號轉換裝置之一第三實施例;圖5是一側視示意圖,說明本新型調整光波段之訊號轉換裝置之一第四實施例;及圖6是一側視示意圖,說明本新型調整光波段之訊號轉換裝置之一第五實施例。Other features and effects of the present invention will be apparent from the following description of the drawings. FIG. 1 is a schematic cross-sectional view showing an existing imaging module applied to an electronic imaging system; A side view of the first embodiment of the signal conversion device for adjusting the optical band; FIG. 3 is a side view showing a second embodiment of the signal conversion device for adjusting the optical band of the present invention; FIG. A side view of the third embodiment of the signal conversion device for adjusting the optical band of the present invention; FIG. 5 is a side view showing a fourth embodiment of the signal conversion device for adjusting the optical band of the present invention; and FIG. It is a side view showing a fifth embodiment of the signal conversion device for adjusting the optical band of the present invention.
在本新型被詳細描述之前,應當注意在以下的說明內容中,類似的元件是以相同的編號來表示。Before the present invention is described in detail, it should be noted that in the following description, similar elements are denoted by the same reference numerals.
參閱圖2,本新型調整光波段之訊號轉換裝置之一第一實施例,於吸收一紅外光線200及接受一偏壓V後,能將該紅外光線200轉換為一具有一預定波段的光線,並使該光線轉換成一電訊號。本新型該第一實施例包含一感光單元2,及一有機光電轉換單元3。在本新型該第一實施例中,該調整光波段之訊號轉換裝置是可被整合至一電 子式成像系統中使用,以整併為一攝像設備,且該具有該預定波段的光線是可見光波段的可見光。Referring to FIG. 2, in a first embodiment of the signal conversion device for adjusting an optical band, after absorbing an infrared ray 200 and receiving a bias voltage V, the infrared ray 200 can be converted into a light having a predetermined wavelength band. And convert the light into a signal. The first embodiment of the present invention comprises a photosensitive unit 2 and an organic photoelectric conversion unit 3. In the first embodiment of the present invention, the signal conversion device for adjusting the optical band can be integrated into an electric The sub-imaging system is used to integrate into an imaging device, and the light having the predetermined wavelength band is visible light in the visible light band.
該感光單元2包括一基板21、多個設置於該基板21上的感光元件22,及一設置於該等感光元件22上的絕緣保護層23。該有機光電轉換單元3設置於該感光單元2的絕緣保護層23之上,並包括一第一穿透電極層31、一設置於該第一穿透電極層31之上的第二穿透電極層32、一設置於該第一穿透電極層31與該第二穿透電極層32之間的光電轉換膜層結構33,及一光伏層34。該光伏層34設置於該光電轉換膜層結構33與該第二穿透電極層32間。該偏壓V電連接於該第一穿透電極層31與該第二穿透電極層32,並具有多對彼此電性相反的第一載子,該光伏層34吸收該紅外光線200後產生多對彼此電性相反的第二載子,並透過該偏壓V而令各對第一載子及各對第二載子的四者其中之二者,且分別來自各對第一載子與各對第二載子之彼此電性相反的載子於該第一穿透電極層31及該第二穿透電極層32兩者其中之一處相抵消,而各對第一載子與各對第二載子的四者其中之另二者於該光電轉換膜層結構33中復合,從而產生該具有該預定波段的光線後,供該等感光元件22吸收而轉換成該電訊號。The photosensitive unit 2 includes a substrate 21, a plurality of photosensitive elements 22 disposed on the substrate 21, and an insulating protective layer 23 disposed on the photosensitive elements 22. The organic photoelectric conversion unit 3 is disposed on the insulating protection layer 23 of the photosensitive unit 2, and includes a first penetration electrode layer 31 and a second penetration electrode disposed on the first penetration electrode layer 31. The layer 32 is a photoelectric conversion film layer structure 33 disposed between the first penetrating electrode layer 31 and the second penetrating electrode layer 32, and a photovoltaic layer 34. The photovoltaic layer 34 is disposed between the photoelectric conversion film layer structure 33 and the second penetration electrode layer 32. The bias voltage V is electrically connected to the first penetrating electrode layer 31 and the second penetrating electrode layer 32, and has a plurality of pairs of first carriers electrically opposite to each other, and the photovoltaic layer 34 absorbs the infrared rays 200 to generate a plurality of pairs of first carriers that are electrically opposite to each other, and through which the bias voltage V is used to cause each of the first pair of carriers and each of the pair of second carriers, respectively, from each pair of first carriers A carrier electrically opposite to each other of each pair of second carriers cancels at one of the first penetrating electrode layer 31 and the second penetrating electrode layer 32, and each pair of first carriers and The other two of the pair of second carriers are combined in the photoelectric conversion film layer structure 33 to generate the light having the predetermined wavelength band, and then absorbed by the photosensitive elements 22 to be converted into the electrical signals.
具體地說,於該第一實施例中,該第一穿透電極層31是直接形成於該感光單元2的絕緣保護層23上,該有機光電轉換單元3的光伏層34是直接形成於該光電轉換膜層結構33上,且該有機光電轉換單元3還包括一封裝 元件36,該封裝元件36形成於該第二穿透電極層32上,是用以保護該光電轉換膜層結構33。也就是說,該第一實施例的具體結構由下至上依序為:該感光單元2的基板21、該等感光元件22、該絕緣保護層23、該第一穿透電極層31、該光電轉換膜層結構33、該光伏層34、該第二穿透電極層32,及該封裝元件36。Specifically, in the first embodiment, the first through electrode layer 31 is directly formed on the insulating protective layer 23 of the photosensitive unit 2, and the photovoltaic layer 34 of the organic photoelectric conversion unit 3 is directly formed thereon. On the photoelectric conversion film layer structure 33, and the organic photoelectric conversion unit 3 further includes a package The component 36 is formed on the second penetration electrode layer 32 to protect the photoelectric conversion film layer structure 33. That is, the specific structure of the first embodiment is sequentially from bottom to top: the substrate 21 of the photosensitive unit 2, the photosensitive elements 22, the insulating protective layer 23, the first through electrode layer 31, and the photoelectric The conversion film layer structure 33, the photovoltaic layer 34, the second penetration electrode layer 32, and the package component 36.
較佳地,該感光單元2的基板21是使用如矽(Si)或砷化鎵(GaAs)等無機半導體基板,但不限於此。而該感光單元2的該等感光元件22可為電荷耦合元件(CCD)或互補式金屬氧化物半導體場效電晶體(CMOSFET),於該第一實施例是以電荷耦合元件(CCD)為例作說明。該感光單元2的絕緣保護層23主要是用以保護該等感光元件22,且是由一選自下列所構成之群組的透光材料所製成:二氧化矽(SiO2 )、氮化矽(Si3 N4 )、氧化鋁(Al2 O3 )、二氧化鉿(HfO),及二氧化鈦(TiO2 )。在該第一實施例中,該絕緣保護層23是使用氧化鋁(Al2 O3 )的透光材料為例作說明。Preferably, the substrate 21 of the photosensitive unit 2 is an inorganic semiconductor substrate such as germanium (Si) or gallium arsenide (GaAs), but is not limited thereto. The photosensitive elements 22 of the photosensitive unit 2 may be a charge coupled device (CCD) or a complementary metal oxide semiconductor field effect transistor (CMOSFET). In the first embodiment, a charge coupled device (CCD) is taken as an example. Give instructions. The insulating protective layer 23 of the photosensitive unit 2 is mainly for protecting the photosensitive elements 22, and is made of a light-transmitting material selected from the group consisting of cerium oxide (SiO 2 ) and nitriding. Bismuth (Si 3 N 4 ), alumina (Al 2 O 3 ), hafnium oxide (HfO), and titanium dioxide (TiO 2 ). In the first embodiment, the insulating protective layer 23 is exemplified by a light-transmitting material using alumina (Al 2 O 3 ).
該有機光電轉換單元3的第一穿透電極層31與第二穿透電極層32分別是由透明導體材料所構成。適用於本新型該第一實施例的透明導體材料可以是如氧化銦錫(ITO)、氧化銦鋅(IZO)、氧化銦鎵鋅(IGZO)、氧化鋅(ZnO)、三氧化鉬(MoO3 )、三氧化鎢(WO3 )等導電性的金屬氧化物,或是如鋁(Al)、銀(Ag)、金(Au)、鎂(Mg)、鈣(Ca)之厚度較薄的金屬,並不限於此,更可以是前述導電性的金屬氧化物與金屬之多層組合。在該第一實施例中,該第一穿透 電極層31是使用氧化銦錫(ITO),而該第二穿透電極層32則是使用Al/Ag/WO3 多層膜為例作說明。另外,覆蓋於該第二穿透電極層32上的封裝元件36是使用一般常用的玻璃基板,但不限於此,也可選用厚度較薄的封裝薄膜進行封裝。The first through electrode layer 31 and the second through electrode layer 32 of the organic photoelectric conversion unit 3 are each composed of a transparent conductor material. The transparent conductor material suitable for the first embodiment of the present invention may be, for example, indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), zinc oxide (ZnO), molybdenum trioxide (MoO 3 ). a conductive metal oxide such as tungsten trioxide (WO 3 ) or a thin metal such as aluminum (Al), silver (Ag), gold (Au), magnesium (Mg), or calcium (Ca) It is not limited thereto, and may be a combination of the above-mentioned conductive metal oxide and a plurality of layers of metal. In the first embodiment, the first penetrating electrode layer 31 is made of indium tin oxide (ITO), and the second penetrating electrode layer 32 is exemplified by using an Al/Ag/WO 3 multilayer film. In addition, the package member 36 covering the second penetration electrode layer 32 is a commonly used glass substrate, but is not limited thereto, and may be packaged by using a thin package film.
由於本新型調整光波段之訊號轉換裝置是被整合於光線充足及不充足時皆能將紅外光線轉換為可見光的攝像設備中使用,因此,適用於本新型該第一實施例的光伏層34是由一選自下列能吸收紅外光線所構成之群組的材料所製成:酞菁錫(SnPc)、氯化硼亞酞菁(SubPc)、亞萘酞菁(SubNc)、酞菁氯化鋁(ClAlPc)、酞菁氧化鈦(TiOPc)、酞菁銅(CuPc)、酞菁鋅(ZnPc)、並六苯(Hexacene)、並五苯(Pentacene)、並四苯(Tetracene)、蒽(Anthracene)、碳60(C60 ),及碳70(C70 ),但不限於此,也可以是前述材料之混合物。在該第一實施例中,該光伏層34則是使用酞菁氯化鋁(ClAlPc)與碳70(C70 )相互混合所構成的薄膜為例作說明。Since the signal conversion device for adjusting the optical band of the present invention is integrated in an imaging device capable of converting infrared light into visible light when the light is sufficient and insufficient, the photovoltaic layer 34 suitable for the first embodiment of the present invention is Made of a material selected from the group consisting of the following infrared light absorbing: tin phthalocyanine (SnPc), boron chloride phthalocyanine (SubPc), naphthalocyanine (SubNc), phthalocyanine aluminum chloride (ClAlPc), titanium phthalocyanine (TiOPc), copper phthalocyanine (CuPc), zinc phthalocyanine (ZnPc), Hexacene, pentacene, Tetracene, Anthracene ), carbon 60 (C 60 ), and carbon 70 (C 70 ), but are not limited thereto, and may be a mixture of the foregoing materials. In this first embodiment, the photovoltaic layer 34 is aluminum phthalocyanine (CIAIPc) chloride and carbon 70 (C 70) composed of a thin film mixed with each other as an example for illustration.
該有機光電轉換單元3的光電轉換膜層結構33具有一形成於該第一穿透電極層31上的正型載子注入層331、一夾置於該光伏層34與正型載子注入層331間的第一傳輸阻擋層332、一夾置於該光伏層34與該第一傳輸阻擋層332間的發光層333、一夾置於該光伏層34與該發光層333間的第二傳輸阻擋層334,及一夾置於該光伏層34與該第二傳輸阻擋層334間的負型載子注入層335。The photoelectric conversion film layer structure 33 of the organic photoelectric conversion unit 3 has a positive type carrier injection layer 331 formed on the first penetration electrode layer 31, and is sandwiched between the photovoltaic layer 34 and the positive carrier injection layer. a first transmission barrier layer 332, a light-emitting layer 333 sandwiched between the photovoltaic layer 34 and the first transmission barrier layer 332, and a second transmission sandwiched between the photovoltaic layer 34 and the light-emitting layer 333 A barrier layer 334, and a negative carrier injection layer 335 sandwiched between the photovoltaic layer 34 and the second transmission barrier layer 334.
詳細地說,該光電轉換膜層結構33即為一般省 略掉兩個穿透電極層之有機發光二極體(organic light-emitting diodes,OLED)之結構,而本新型該第一實施例的光電轉換膜層結構33是應用於具有電荷耦合元件(CCD)或互補式金屬氧化物半導體場效電晶體(CMOSFET)的裝置中。所以該光電轉換膜層結構33的發光層333可以配合所欲觀測的影像,而放射出例如紅色、綠色,或藍色等不同顏色的可見光並傳送至該等感光元件22,進而使得所觀察到的影像對比度因可見光而有效地上升,並從而獲得更清晰的影像。該光電轉換膜層結構33的製程技術並非本新型之技術特徵,其僅屬於一般有機發光二極體的習知技術,於此不再多加贅述。In detail, the photoelectric conversion film layer structure 33 is a general province The structure of the organic light-emitting diodes (OLEDs) of the two penetrating electrode layers is omitted, and the photoelectric conversion film layer structure 33 of the first embodiment of the present invention is applied to have a charge coupled device (CCD). Or a device of a complementary metal oxide semiconductor field effect transistor (CMOSFET). Therefore, the light-emitting layer 333 of the photoelectric conversion film layer structure 33 can be combined with the image to be observed, and emit visible light of different colors such as red, green, or blue, and transmitted to the photosensitive elements 22, thereby making the observed The contrast of the image is effectively increased by visible light, and a clearer image is obtained. The process technology of the photoelectric conversion film layer structure 33 is not a technical feature of the present invention, and it belongs only to the conventional technology of a general organic light-emitting diode, and will not be further described herein.
更詳細地說,於該第一實施例中,該偏壓V的正極是電連接於該第一穿透電極層31,該偏壓V的負極是電連接於該第二穿透電極層32,且該偏壓V所具有的多對彼此電性相反的第一載子,分別為正型第一載子與負型第一載子;而該光伏層34吸收該紅外光線200後則激發正型第二載子與負型第二載子。當該偏壓V的正型第一載子與負型第一載子分別由該第一穿透電極層31與第二穿透電極層32注入時,該光伏層34所激發出的負型第二載子與正型第二載子則分別朝該第一穿透電極層31與該第二穿透電極層32方向移動,此時,該偏壓V的負型第一載子會與該光伏層34的正型第二載子於該第二穿透電極層32處相抵消,而該偏壓V的正型第一載子則會與該光伏層34的負型第二載子於該光電轉換膜層結構33的發光層333中復合, 從而產生該具有該預定波段的光線後,供該等感光元件22吸收而轉換成該電訊號。In more detail, in the first embodiment, the anode of the bias voltage V is electrically connected to the first penetration electrode layer 31, and the cathode of the bias voltage V is electrically connected to the second penetration electrode layer 32. And the plurality of pairs of first carriers that are electrically opposite to each other are respectively a positive first carrier and a negative first carrier; and the photovoltaic layer 34 absorbs the infrared light 200 to excite The positive second carrier and the negative second carrier. When the positive first carrier and the negative first carrier of the bias voltage V are injected from the first through electrode layer 31 and the second through electrode layer 32, respectively, the negative layer excited by the photovoltaic layer 34 The second carrier and the positive second carrier are respectively moved toward the first penetrating electrode layer 31 and the second penetrating electrode layer 32. At this time, the negative first carrier of the bias voltage V and The positive second carrier of the photovoltaic layer 34 cancels at the second penetration electrode layer 32, and the positive first carrier of the bias voltage V and the negative second carrier of the photovoltaic layer 34 Composite in the light-emitting layer 333 of the photoelectric conversion film layer structure 33, The light having the predetermined wavelength band is generated and then absorbed by the photosensitive elements 22 to be converted into the electrical signal.
此處要補充說明的是,該光電轉換膜層結構33中的膜層堆疊順序也可以是相互顛倒,但需注意的是,當該光電轉換膜層結構33的膜層堆疊順序是相反設置時,該偏壓V的正極與負極也要隨之反向電連接於相對應的穿透電極層。也就是說,於該第一實施例中,該光電轉換膜層結構33也可以先於該第一穿透電極層31上形成該負型載子注入層335後,再依序形成該第二傳輸阻擋層334、該發光層333、該第一傳輸阻擋層332,及該正型載子注入層331,再將該光伏層34形成於該正型載子注入層331上,最後再形成該第二穿透電極層32與該封裝元件36。此時,該偏壓V的正極與負極則是分別電連接於該第二穿透電極層32與該第一穿透電極層31。It is to be noted here that the film stacking order in the photoelectric conversion film layer structure 33 may also be reversed from each other, but it should be noted that when the film stacking order of the photoelectric conversion film layer structure 33 is reversed. The positive electrode and the negative electrode of the bias voltage V are also electrically connected in reverse to the corresponding penetrating electrode layer. That is, in the first embodiment, the photoelectric conversion film layer structure 33 may also form the second carrier injection layer 335 on the first penetration electrode layer 31, and then sequentially form the second a transmission barrier layer 334, the light-emitting layer 333, the first transmission barrier layer 332, and the positive-type carrier injection layer 331, and the photovoltaic layer 34 is formed on the positive-type carrier injection layer 331, and finally formed. The second penetrating electrode layer 32 and the package component 36. At this time, the positive electrode and the negative electrode of the bias voltage V are electrically connected to the second penetrating electrode layer 32 and the first penetrating electrode layer 31, respectively.
參閱圖3,本新型調整光波段之訊號轉換裝置之第二實施例,大致是相同於該第一實施例,其不同之處是在於,該第二實施例的有機光電轉換單元3的光伏層34是設置於該光電轉換膜層結構33與第一穿透電極層31間;也就是說,該光電轉換膜層結構33的正型載子注入層331形成於該光伏層34上、該第一傳輸阻擋層332夾置於該第二穿透電極層32與該正型載子注入層331間、該發光層333夾置於該第二穿透電極層32與該第一傳輸阻擋層332間、該第二傳輸阻擋層334夾置於該第二穿透電極層32與該發光層333間,該負型載子注入層335夾置於該第二穿透電 極層32與該第二傳輸阻擋層334間,且該第二實施例的第二穿透電極層32是形成於該負型載子注入層335上。要說明的是,該第一、二實施例是於該感光單元2的絕緣保護層23製作完成後,直接於該絕緣保護層23上形成該光電轉換膜層結構33的各層結構,因此,該第一、二實施例的結構為薄型化的結構,此處製程技術實屬習知技術,於此不再多加贅述。Referring to FIG. 3, a second embodiment of the signal conversion device for adjusting the optical band of the present invention is substantially the same as the first embodiment, except that the photovoltaic layer of the organic photoelectric conversion unit 3 of the second embodiment is different. 34 is disposed between the photoelectric conversion film layer structure 33 and the first penetration electrode layer 31; that is, the positive carrier injection layer 331 of the photoelectric conversion film layer structure 33 is formed on the photovoltaic layer 34, the first A transmission barrier layer 332 is interposed between the second penetration electrode layer 32 and the positive carrier injection layer 331. The light emitting layer 333 is interposed between the second penetration electrode layer 32 and the first transmission barrier layer 332. The second transmission barrier layer 334 is interposed between the second penetration electrode layer 32 and the light-emitting layer 333, and the negative-type carrier injection layer 335 is interposed between the second penetration electricity. The pole layer 32 is interposed between the second transmission barrier layer 334, and the second penetration electrode layer 32 of the second embodiment is formed on the negative carrier injection layer 335. It is to be noted that, in the first and second embodiments, after the insulating protective layer 23 of the photosensitive unit 2 is completed, the layer structures of the photoelectric conversion film layer structure 33 are formed directly on the insulating protective layer 23, and therefore, The structures of the first and second embodiments are thinned structures, and the process technology is a conventional technique, and will not be further described herein.
參閱圖4,本新型調整光波段之訊號轉換裝置之第三實施例,大致是相同於該第一實施例,其不同之處是在於,該第三實施例還包含一設置於該感光單元2與該有機光電轉換單元3間的透鏡單元4,該有機光電轉換單元3還包括一設置於該感光單元2與該第一穿透電極層31間的透光性隔離元件35。在該第一實施例中,該透光性隔離元件35是一玻璃基板,且該透光性隔離元件35設置於該透鏡單元4與該第一穿透電極層31間。具體地說,該第三實施例是分別將該感光單元2與該有機光電轉換單元3先後製作完成,再將該透鏡單元4疊合於該有機光電轉換單元3的透光性隔離元件35下,及該感光單元2的絕緣保護層23上即可進行運作。要說明的是,由於該第三實施例的透光性隔離元件35是以具有一定厚度的玻璃所構成,因此,由該有機光電轉換單元3所發出的光,穿透該透光性隔離元件35時會呈現發散狀態,所以需要透過該透鏡單元4用以修正此發散的光,而能更有效地集中至該感光單元2的各感光元件22上。Referring to FIG. 4, the third embodiment of the signal conversion device for adjusting the optical band is substantially the same as the first embodiment, except that the third embodiment further includes a photocell unit 2 The lens unit 4 between the organic photoelectric conversion unit 3 and the organic photoelectric conversion unit 3 further includes a light-transmitting spacer element 35 disposed between the photosensitive unit 2 and the first penetration electrode layer 31. In the first embodiment, the light-transmitting isolating element 35 is a glass substrate, and the light-transmitting isolating element 35 is disposed between the lens unit 4 and the first penetrating electrode layer 31. Specifically, in the third embodiment, the photosensitive unit 2 and the organic photoelectric conversion unit 3 are successively fabricated, and the lens unit 4 is superposed on the transparent isolation element 35 of the organic photoelectric conversion unit 3. And the insulating protective layer 23 of the photosensitive unit 2 can be operated. It is to be noted that since the light-transmitting spacer member 35 of the third embodiment is composed of glass having a certain thickness, light emitted by the organic photoelectric conversion unit 3 penetrates the light-transmitting spacer member. At 35 o'clock, the diverging state is exhibited, so that it is necessary to correct the divergent light through the lens unit 4, and it can be more effectively concentrated on the respective photosensitive elements 22 of the photosensitive unit 2.
參閱圖5,本新型調整光波段之訊號轉換裝置之第四實施例,大致是相同於該第三實施例,其不同之處在於,該第四實施例的有機光電轉換單元3的光伏層34是設置於該光電轉換膜層結構33與第一穿透電極層31間,也就是說,該光電轉換膜層結構33的正型載子注入層331是直接形成於該光伏層34上。Referring to FIG. 5, a fourth embodiment of the signal conversion device for adjusting the optical band of the present invention is substantially the same as the third embodiment, except that the photovoltaic layer 34 of the organic photoelectric conversion unit 3 of the fourth embodiment is different. It is disposed between the photoelectric conversion film layer structure 33 and the first penetration electrode layer 31, that is, the positive carrier injection layer 331 of the photoelectric conversion film layer structure 33 is directly formed on the photovoltaic layer 34.
參閱圖6,本新型調整光波段之訊號轉換裝置之第五實施例,大致是相同於該第三實施例,其不同之處在於,該第五實施例並無設置該透鏡單元4,且該透光性隔離元件35是由一選自下列所構成之群組的薄膜材料所製成:二氧化矽(SiO2 )、氮化矽(Si3 N4 )、氧化鋁(Al2 O3 )、二氧化鉿(HfO),及二氧化鈦(TiO2 ),或由前述材料之多層組合。另外,於該第五實施例中,該封裝元件36是由玻璃基板所構成。此外,由於該透光性隔離元件35的厚度僅為1μm,因此,該第五實施例是直接將該有機光電轉換單元3疊合於該感光單元2上而直接整合至電子式成像系統(圖未示)中使用。要說明的是,該有機光電轉換單元3疊合於該感光單元2上時,也可使用如油液等折射率匹配層(圖未示),或是具抗磨損的高分子穿透式塑膠離型膜(圖未示)而設置於該有機光電轉換單元3與感光單元2之間。因為該透光性隔離元件35是由該薄膜材料所製成,所以其相對於使用玻璃基板的第三實施例來說,具有更薄的厚度。當該有機光電轉換單元3所放射出來的光,穿透該透光性隔離元件35時,其光線於發散之前即可被該等感光元件22所吸收而轉 換成該電訊號。也就是說,該第五實施例即使不需設置該透鏡單元4也能使光線有效地傳遞至該等感光元件22上。須補充說明的是,該第五實施例的光伏層34設置的位置也可如該第二、四實施例,視情況地設置於該光電轉換膜層結構33與第一穿透電極層31間。Referring to FIG. 6 , a fifth embodiment of the signal conversion device for adjusting an optical band of the present invention is substantially the same as the third embodiment, except that the lens unit 4 is not disposed in the fifth embodiment, and the lens unit 4 is not provided. The light-transmitting spacer member 35 is made of a film material selected from the group consisting of cerium oxide (SiO 2 ), cerium nitride (Si 3 N 4 ), and aluminum oxide (Al 2 O 3 ). , cerium oxide (HfO), and titanium dioxide (TiO 2 ), or a combination of layers of the foregoing materials. Further, in the fifth embodiment, the package member 36 is composed of a glass substrate. In addition, since the thickness of the light-transmitting spacer element 35 is only 1 μm, the fifth embodiment directly integrates the organic photoelectric conversion unit 3 on the photosensitive unit 2 and directly integrates into the electronic imaging system (Fig. Used in not shown). It should be noted that when the organic photoelectric conversion unit 3 is superposed on the photosensitive unit 2, an index matching layer such as oil (not shown) or a polymer-transmissive plastic with anti-wear can be used. A release film (not shown) is provided between the organic photoelectric conversion unit 3 and the photosensitive unit 2. Since the light-transmitting spacer member 35 is made of the film material, it has a thinner thickness with respect to the third embodiment using the glass substrate. When the light emitted from the organic photoelectric conversion unit 3 passes through the transparent spacer element 35, the light is absorbed by the photosensitive element 22 and converted into the electrical signal before being diverged. That is, the fifth embodiment enables light to be efficiently transmitted to the photosensitive members 22 even if the lens unit 4 is not required to be provided. It should be noted that the location of the photovoltaic layer 34 of the fifth embodiment may also be disposed between the photoelectric conversion film layer structure 33 and the first penetration electrode layer 31 as in the second and fourth embodiments. .
值得一提的是,該第三、四、五實施例均是將該感光單元2與該有機光電轉換單元3先後製作完成再進行疊合,以此方式進行,不僅能提高該感光單元2與該有機光電轉換單元3的製作良率,還能隨時替換因使用壽命較短而提早損壞的有機光電轉換單元3。It should be noted that the third, fourth, and fifth embodiments are that the photosensitive unit 2 and the organic photoelectric conversion unit 3 are successively fabricated and then stacked, in this manner, which can not only improve the photosensitive unit 2 and The production rate of the organic photoelectric conversion unit 3 can also replace the organic photoelectric conversion unit 3 which is damaged early due to a short service life.
另外須說明的是,該第二、三、四、五實施例的光電轉換膜層結構33中的膜層堆疊順序與該偏壓V的正極、負極之電連接位置,均如該第一實施例中所述,是可相互對應對調。It should be noted that the film stacking order in the photoelectric conversion film layer structure 33 of the second, third, fourth, and fifth embodiments is electrically connected to the positive electrode and the negative electrode of the bias voltage V as in the first embodiment. As described in the example, they are mutually compatible.
綜上所述,本新型調整光波段之訊號轉換裝置,其透過該光伏層34有效地吸收紅外光線200以產生多對第二載子,並藉由該偏壓V的各對第一載子以於光電轉換膜層結構33中與各對第二載子復合,從而產生具有預定波段的光線後,供該等感光元件22吸收而轉換成該電訊號,以使其在整合至該電子式成像系統以整併為該攝像設備且於夜晚或光線不足時,皆能改善成像的色彩偏差從而提高成像的對比度,故確實能達成本新型之目的。In summary, the present invention adjusts the optical band signal conversion device, which effectively absorbs the infrared light 200 through the photovoltaic layer 34 to generate a plurality of pairs of second carriers, and the first carrier of each pair of the bias voltage V The light-transfer film layer structure 33 is combined with each pair of second carriers to generate light having a predetermined wavelength band, and then absorbed by the photosensitive elements 22 to be converted into the electrical signals so as to be integrated into the electronic type. The imaging system can achieve the purpose of the present invention by merging the imaging device and improving the color deviation of the imaging at night or when the light is insufficient, thereby improving the contrast of the imaging.
惟以上所述者,僅為本新型之實施例而已,當不能以此限定本新型實施之範圍,即大凡依本新型申請專 利範圍及專利說明書內容所作之簡單的等效變化與修飾,皆仍屬本新型專利涵蓋之範圍內。However, the above is only an embodiment of the present invention, and it is not possible to limit the scope of the implementation of the present invention. The simple equivalent changes and modifications made by the scope of the patent and the contents of the patent specification are still within the scope of this new patent.
200‧‧‧紅外光線200‧‧‧Infrared light
2‧‧‧感光單元2‧‧‧Photosensitive unit
21‧‧‧基板21‧‧‧Substrate
22‧‧‧感光元件22‧‧‧Photosensitive elements
23‧‧‧絕緣保護層23‧‧‧Insulation protective layer
3‧‧‧有機光電轉換單元3‧‧‧Organic photoelectric conversion unit
31‧‧‧第一穿透電極層31‧‧‧First penetrating electrode layer
32‧‧‧第二穿透電極層32‧‧‧Second penetrating electrode layer
33‧‧‧光電轉換膜層結構33‧‧‧Photoelectric conversion film structure
331‧‧‧正型載子注入層331‧‧‧Positive carrier injection layer
332‧‧‧第一傳輸阻擋層332‧‧‧First transmission barrier
333‧‧‧發光層333‧‧‧Lighting layer
334‧‧‧第二傳輸阻擋層334‧‧‧second transmission barrier
335‧‧‧負載子注入層335‧‧‧Load sub-injection layer
34‧‧‧光伏層34‧‧‧Photovoltaic layer
36‧‧‧封裝元件36‧‧‧Package components
V‧‧‧偏壓V‧‧‧ bias
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