TWM458650U - Dual ion source structure of ion implantation system - Google Patents

Description

Dual ion source structure of ion implanter

The present invention relates to a dual ion source structure of an ion implanter, and more particularly to an ion source structure for an ion implanter having a dual ion source.

In recent years, due to the rapid development of semiconductor technology, the size of wafers has grown from the early 5 至 to the current 12 吋. However, based on the consideration of cost and economic benefits, with the development of different wafer sizes, the relative There will be production equipment used to make wafers.

In the semiconductor integrated circuit manufacturing technology, the ion implanter is a device that can introduce dopant atoms into the germanium substrate, thereby changing the electrical characteristics. At present, the filaments in the ion implanter used in the manufacture of semiconductor integrated circuits have only one set of filament modules (including a filament and a bushing). However, according to the current development of wafer size, the internal space of the reaction chamber (Arc Chamber) in the ion implanter needs to be expanded to accommodate larger ion sources and reaction gases, and the amount of reactant gas introduced into the reaction chamber is also relatively increase.

If only one filament module is maintained in the reaction chamber, the amount of free hot electrons from the filament and the surface of the liner will be insufficient for the development of large-sized wafers, and only one set of filaments will be used in the reaction chamber in the ion implanter. Modules can not increase the probability of collision, and thus can not effectively dissociate gas molecules and form a good chain reaction, resulting in higher ion current, which will reduce filament life and increase the number of machine maintenance.

In view of this, this creation studies and discusses the above-mentioned problems, and through extensive analysis, finally developed a dual ion source structure of an ion implanter, which will solve the above problems.

The main purpose of the present invention is to provide a dual ion source structure of an ion implanter, which uses two cathode bushes correspondingly to provide two filaments, and two filaments can generate hot electrons with the reaction gas, thereby increasing the probability of gas collision. Dissolve gas molecules more efficiently and form good A chain reaction produces a higher ion current, which in turn increases the number of free hot electrons that are 1.5 times greater. According to the dual ion source structure of the present invention, a semiconductor ion implanter can be performed in response to a wafer of 18 未来 or larger in the future.

Another object of the present invention is to provide a dual ion source structure for an ion implanter. By using two sets of cathode bushings corresponding to two filaments in the arc reaction chamber, the filament life can be increased and the number of machine maintenance times can be reduced.

In order to achieve the above purpose, the present invention provides a dual ion source structure of an ion implanter, comprising two cathode bushings, each of which has a receiving space, and the fixing plate has two perforations, so that the cathode bushings are respectively connected. Perforating, and exposing the accommodating space, the two filaments are correspondingly disposed in the accommodating space, the arc reaction chamber has an arc reaction space, and an arc heat dissipating plate is disposed on one side of the arc reaction chamber, the arc heat dissipating plate has a slit, and the arc reaction chamber is covered Part of the two cathode bushings.

The purpose of the present invention, the technical content, the features, and the effects achieved by the present invention will be more readily understood by the specific embodiments and the accompanying drawings.

10‧‧‧Double ion source structure

12‧‧‧ cathode bushing

14‧‧‧ accommodating space

16‧‧‧ fixed plate

18‧‧‧Perforation

20‧‧‧filament

22‧‧‧Arc reaction chamber

24‧‧‧Arc reaction space

26‧‧‧Arc heat sink

28‧‧‧ gap

30‧‧‧ gas injection hole

32‧‧‧Electronic repeller

34‧‧‧Insulation ring

36‧‧‧Fixed ring

The first picture shows the structure of the dual ion source of the ion implanter of the present invention.

Figure 2 is a schematic diagram of the cathode bushing, fixing plate and filament structure of the present invention.

Referring to FIG. 1 and FIG. 2, the dual ion source structure diagram of the ion implanter of the present invention, and the cathode bushing, the fixing plate and the filament structure diagram are illustrated. As shown in the figure, the present invention discloses a dual ion source structure 10 for an ion implanter, comprising two cathode bushings 12, each of which has an accommodating space 14, and the fixing plate 16 has two perforations. 18, the cathode bushing 12 can be respectively connected to the through hole 18, and the accommodating space 14 is exposed. The two filaments 20 are correspondingly disposed in the accommodating space 14, the arc reaction chamber 22 has an arc reaction space 24, and one of the arc reaction chambers 22 An arc heat sink 26 is provided on the side, the arc heat sink 26 has a slit 28, and the arc reaction chamber 22 covers a portion of the two cathode bushings 12.

The dual ion source structure 10 of the ion implanter as described above, wherein the arc reaction chamber 22 is provided with a gas injection hole 30 for injecting a reaction gas, the reaction gas has a plurality of gas molecules, and the gas molecules can be dissociated into atoms, and the atoms can be further A charged ion is formed, and after the charged ion collides with the electron group, a plasma is formed. In addition, a solid source may be modified in the arc reaction chamber 22, and the solid source may be Sublimation is the majority of gas molecules, gas molecules can be dissociated into atoms, atoms can form charged ions, and charged ions collide with electron groups to form plasma. The above-mentioned reaction gas uses a type of boron trifluoride, phosphine, arsine or argon, and the type of the solid source contains an indium or antimony component.

As described above, when the present arc reaction chamber 22 is connected to a high voltage, the two cathode bushings 12 can pass a low voltage, and when the two filaments 20 are supplied with direct current, the reaction gas is injected into the arc reaction chamber 22 again. The creation can dissociate the gas molecules in the arc reaction chamber 22 by the potential difference between the high voltage and the low voltage to generate a higher ion current to generate plasma, the plasma has a plurality of hot electrons, and the slit 28 discharges the hot electrons. To form an ion beam.

Referring to Figures 1 and 2, the filament 20 of the present invention is made of tungsten, group or molybdenum. The dual ion source structure 10 of the present invention is suitable for high current ion implanters, medium current ion implanters or high energy ion implanters.

In addition, as shown in FIG. 1, the dual ion source structure 10 of the present ion implanter further includes an electron repeller 32 disposed in the arc reaction chamber 22 and differently located in the second cathode liner 12 One end to repel the hot electrons, wherein an insulating ring 34 may be disposed between the electron repeller 32 and the arc reaction chamber 22, and the insulating ring 34 is sleeved with the electron repeller 32 to insulate the electron repeller 32 from the arc reaction chamber 22. As described above, the present invention may also include two fixing rings 36 respectively disposed between the fixing plate 16 and the cathode bushing 12 to fix the two cathode bushings 12, and the two fixing rings 36 are high melting point metals. Material.

In summary, the present invention discloses a dual ion source structure of an ion implanter, which uses two cathode bushes correspondingly to provide two filaments, and two filaments can generate hot electrons with the reaction gas, thereby increasing the probability of gas collision. , more effectively dissociate the gas molecules and form a good chain reaction to produce a higher ion current, thereby expanding the number of free hot electrons generated by 1.5 times. According to the dual ion source structure of the present invention, a semiconductor ion implanter can be performed in response to a wafer of 18 未来 or larger in the future. The use of two sets of cathode bushings corresponding to the dual ion source structure of the two filaments can increase the filament life and reduce the number of machine maintenance times.

The embodiments described above are only preferred embodiments of the present invention, and the features of the present invention are described by way of examples, and the purpose of the present invention is to enable those skilled in the art to understand the contents of the present invention and implement them, and is not intended to be limited. The scope of this creation. Equivalent changes and modifications to the structure, shape, characteristics and spirit described in the application for the scope of the patent application should be included in the scope of the patent application.

10‧‧‧Double ion source structure

12‧‧‧ cathode bushing

14‧‧‧ accommodating space

16‧‧‧ fixed plate

18‧‧‧Perforation

20‧‧‧filament

22‧‧‧Arc reaction chamber

24‧‧‧Arc reaction space

26‧‧‧Arc heat sink

28‧‧‧ gap

30‧‧‧ gas injection hole

32‧‧‧Electronic repeller

34‧‧‧Insulation ring

36‧‧‧Fixed ring

Claims (10)

A dual ion source structure of an ion implanter, comprising: two cathode bushings, each of the cathode bushings having an accommodating space; and a fixing plate having two through holes, wherein the cathode bushings respectively connect the through holes, and Exposing the accommodating space; two filaments correspondingly disposed in the accommodating space; and an arc reaction chamber having an arc reaction space, and an arc heat dissipation plate disposed on one side of the arc reaction chamber, the arc heat dissipation plate having a a gap, the arc reaction chamber encasing a portion of the two cathode liners. The dual ion source structure of the ion implanter according to claim 1, wherein the arc reaction chamber is provided with a gas injection hole for injecting a reaction gas having a plurality of gas molecules, and the gas molecules can be dissociated into a plurality of Atoms that form a plurality of charged ions that collide with an electron group to form a plasma. The dual ion source structure of the ion implanter of claim 2, wherein the arc reaction chamber is provided with a solid source, and the solid source can be sublimated into the gas molecules, and the gas molecules can be dissociated into the atoms, The atoms may form the charged ions that collide with the electron group to form the plasma. The dual ion source structure of the ion implanter according to claim 3, wherein the arc reaction chamber is connected to a high voltage, the two cathode bushings can pass a low voltage, and the two filaments can be used for continuous current The plasma is generated in the arc reaction chamber by a potential difference between the high voltage and the low voltage, the plasma having a plurality of hot electrons, the slits discharging the hot electrons to form an ion beam. The dual ion source structure of the ion implanter of claim 4, further comprising: an electron repeller disposed in the arc reaction chamber and located at the other end of the two cathode liners to repel the hot electrons . The dual ion source structure of the ion implanter of claim 5, wherein an insulating ring is disposed between the electron repeller and the arc reaction chamber, and the insulating ring is sleeved to the electron repeller to repel the electron The arc chamber is insulated from the arc reaction chamber. The dual ion source structure of the ion implanter of claim 1, further comprising two fixing rings disposed between the fixing plate and the cathode bushing to fix the two cathode bushings. The dual ion source structure of the ion implanter of claim 7, wherein the two fixed rings are made of a high melting point metal material. The dual ion source structure of the ion implanter of claim 1, wherein the filament is made of tungsten, tantalum or molybdenum. The dual ion source structure of the ion implanter of claim 1, wherein the dual ion source structure is suitable for a high current ion implanter, a medium current ion implanter, or a high energy ion implanter.