TWM457291U - Semiconductor light emitting chip structure - Google Patents

Description

Structure of semiconductor light-emitting chip

The present invention relates to a semiconductor light emitting wafer, and further to a semiconductor light emitting wafer structure suitable for reflow soldering.

As the luminous efficiency of semiconductor light-emitting wafers increases and the manufacturing cost decreases, semiconductor light-emitting wafers have been widely used in the fields of backlighting, display, and illumination.

A common semiconductor light emitting wafer structure is as shown in FIG. 1 and includes a sapphire substrate 11, an n-type conductive layer 12, a light emitting layer 13, a p-type conductive layer 14, an n-type electrode 15, a p-type electrode 16, and conductive lines 19a, 19b. The insulating layer 110, the pads 121a and 121b, the LED holder 120, and the die bonding glue 120a. In order to reduce the shading effect and increase the effective light-emitting area, the sizes of the electrodes 15 and 16 are minimized, generally between 75 and 95 microns in diameter to meet the needs of the wire. The illuminating wafer is usually fixed on the LED holder 120 by a bonding adhesive 120a, and then ultrasonically pressure-welded the conductive lines 19a and 19b, and then the potting glue (such as epoxy resin, silicone), the entire luminescent wafer and the conductive line 19a and 19b, the pads 121a and 121b are wrapped to achieve moisture, moisture and insulation. The packaged LEDs can be applied to areas such as backlight display and lighting.

Another common semiconductor light-emitting wafer structure is shown in FIG. 2, including a sapphire substrate 21, an n-type conductive layer 22, a light-emitting layer 23, a p-type conductive layer 24, an n-type electrode 25, a p-type electrode 26, and a reflective contact layer 26a. , n-type electrode step 24a, The eutectic solders 29a and 29b, the LED holder 220, the pads 220a and 220b, and the insulating layer 210. In order to overcome the heat insulating effect of the bonding adhesive 120a between the luminescent wafer and the corresponding LED holder shown in FIG. 1, the conductive wires 19a and 19b have poor thermal conductivity, easy breakage, and defects and problems such as the shading effect of the electrodes 15 and 16, FIG. The semiconductor stack of the luminescent wafer is fixed to the LED holder 220 in a face-down manner, and the sapphire substrate 21 is in the light-emitting direction to avoid the electrode shading effect.

In order to improve the thermal conductivity and improve the current spreading effect, the electrode 26 generally covers the entire surface of the p-type conductive layer 24, and the electrodes 25 and 26 are usually fixed to the LED holder 220 by eutectic soldering to avoid the defects caused by the gold wire soldering. . Typically, an insulating layer 210 is provided on the surface of the n-type electrode step 24a between the electrodes 25 and 26 and/or the sidewall of the n-type electrode via to ensure insulation between the electrodes and to reduce leakage of the n-type electrode step and/or the sidewall of the n-type electrode via. . Since the insulating layer 210 is interposed between the electrode 26 and the p-type conductive layer 24 and closely adheres to the surface of the p-type conductive layer 24, increasing the width of the insulating layer 210 reduces the area of the light-emitting layer 23 or the electrode 26, directly resulting in an effective light-emitting area. Reduction. The limited width of the insulating layer makes the illuminating wafer shown in FIG. 2 have to be fixed to the LED holder 220 by using eutectic soldering technology and equipment with high welding precision, resulting in high manufacturing cost and low efficiency. The soldered illuminating wafer also needs to encapsulate the entire illuminating wafer with potting glue to achieve moisture-proof and moisture-proof insulation.

A common semiconductor lighting fixture manufactured by using the above LED (taking a bulb lamp as an example) is shown in FIG. 3, and includes an LED 381 (the LED 381 includes a potting body 390, a phosphor layer 390a, a bracket 320, a light emitting chip 380, and a bonding pad 35). ), solder 34, Pad 33, insulating layer 32, aluminum substrate 31, lamp upper plate 330, heat sink body 350, conductive wire 356, power source 355, lamp cap 353, power supply line 354, and lamp cover 391, aluminum substrate 31 and aluminum substrate 31 are provided. The insulating layer 32, the pads 33, and the light emitting diodes (LED) 381 on the upper surface constitute a light source module as generally described.

Since the light-emitting chip 380 cannot be directly adhered to the upper surface of the aluminum substrate 31 or the upper plate 330 of the lamp body like other electronic components, such as resistors, it is necessary to package the light-emitting chip 380 into the LED 381 before bonding to the aluminum substrate. use. The special equipment for solid crystal bonding wire used for manufacturing LED is expensive, the packaging process is complicated, and a customized LED bracket must be used, and the LED package cannot be directly realized on the aluminum substrate 31 or the lamp upper plate 330 of different shapes and sizes, resulting in semiconductor Lighting fixtures have long manufacturing processes, many steps, and high costs.

Structurally, the illuminating wafer 380 is fixed to the LED holder 320 by a die bonding process, and the LED 381 is fixed to the aluminum substrate 31 by a reflow soldering method. The aluminum substrate is fixed to the lamp upper plate 330 by mechanical fastening. Three times of repeated fixation not only wastes a lot of raw materials, increases the weight of the lamps, but also adds many insignificant process links and production equipment, which makes the overall manufacturing cost of the lamps high.

From the heat dissipation effect, the heat of the light-emitting chip 380 must pass through the die-bonding interface, the LED holder 320, the solder 34, the pad 33, the insulating layer 32, the aluminum substrate 31, and then be transferred to the upper plate 330 of the lamp body, and finally pass through the heat-dissipating lamp body. 350 is scattered into the atmosphere. Obviously, the heat conduction path is long and the interface is many. The solid crystal interface, the LED bracket 320 and the insulating layer 32 have large thermal resistance and heat resistance, which often become a heat conduction bottleneck, so that the heat dissipation effect of the whole lamp does not follow the use of the large area heat dissipation body 350. And improved. Heat dissipation Good, it will lead to faster light decay of the luminescent wafer 380, and will shorten the service life of the whole lamp. It will be apparent that there are substantial deficiencies in the method and steps of fabricating a lighting module or luminaire determined by the luminescent wafer structure illustrated in FIGS. 1 and 2.

The technical problem to be solved by the present invention is to provide a semiconductor light emitting wafer structure which is simple in structure, convenient in use, and low in manufacturing cost.

The technical solution adopted by the present invention to solve the technical problem is to construct a semiconductor light-emitting chip comprising a substrate having a first surface and a second surface, having at least an n-type conductive layer on the first surface of the substrate, and emitting light a semiconductor stack of a layer and a p-type conductive layer having at least one n-type electrode step and/or an n-type electrode via hole exposing a portion of the n-type conductive layer on the surface of the semiconductor laminate, all bare of the semiconductor light-emitting wafer The conductive surface and the side surface are covered by at least one insulating layer; the insulating layer surface is provided with at least one p-type electrode and at least one n-type electrode; the p-type electrode and the n-type electrode are insulated from each other, And electrically connected to the p-type conductive layer and the n-type conductive layer through the insulating layer.

In the semiconductor light-emitting wafer of the present invention, a p-type solder which is electrically connected to the p-type electrode and is in close contact with the surface of the insulating layer is provided at a position of the p-type electrode exposed on the surface of the insulating layer. a pad such that a portion of the insulating layer is wrapped between the semiconductor laminate and the p-type pad; and/or a position exposed to the n-type electrode on a surface of the insulating layer is provided with the n-type The electrode is electrically connected and closely attached to the n-type pad on the surface of the insulating layer, so that part of the insulating layer is packaged Wrap between the semiconductor stack and the n-type pad.

In the semiconductor light-emitting wafer of the present invention, the semiconductor light-emitting chip has a concave periphery; the concave portion is located on a side of the semiconductor stacked layer of the semiconductor light-emitting chip, and the concave bottom surface is located on the substrate Within a surface or the substrate, the concave side and bottom surface are surrounded by at least one insulating layer.

In the semiconductor light-emitting wafer of the present invention, a p-type current spreading layer is disposed between the surface of the p-type conductive layer and the insulating layer; the p-type current spreading layer is electrically connected to the p-type electrode, and the p The current spreading layer includes one or more of a p-type conductive expansion layer, a p-type reflective layer, and a p-type contact layer; and/or the bottom surface of the n-type electrode stepped surface or the n-type electrode via hole and the insulating layer There is an n-type current spreading layer; the n-type current spreading layer is electrically connected to the n-type electrode, and the n-type current spreading layer comprises an n-type conductive expansion layer, an n-type reflective layer, and an n-type contact layer One or more.

In the semiconductor light-emitting wafer of the present invention, part or all of the insulating layer contains a light reflecting layer; the light reflecting layer is located in the middle or the exposed surface of the insulating layer.

In the semiconductor light-emitting wafer of the present invention, the substrate is a light-transmitting substrate; the first surface and/or the second surface of the substrate is a flat smooth surface or a structured surface; the structured surface comprises a tapered shape One or more of a rough surface, a concave-convex surface, a pyramidal surface; and/or the substrate side and/or the semiconductor laminate side is a smooth plane that is perpendicular or oblique to the first surface of the substrate, a smooth surface, a structured plane, or a structured surface; the structuring includes bumps, saws One or more of the teeth.

In the semiconductor light-emitting wafer of the present invention, between the p-type electrode and the n-type electrode, there is at least a metal-based thermal pad that is in close contact with the surface of the insulating layer, the thermal pad and the n-type electrode And the p-type electrode are insulated from each other; and/or between the p-type pad and the n-type pad, there is at least a metal-based thermal pad that is in close contact with the surface of the insulating layer, the thermal pad The n-type pad and the p-type pad are insulated from each other.

The invention has the following gain effects: the novel semiconductor light-emitting chip has the advantages of simple structure, convenient use and low manufacturing cost, and the structure thereof allows the semiconductor light-emitting wafer to be directly soldered to the light board for preparing various lamps or light sources by the reflow soldering method. , on the light bar, the lamp post, or on the LED bracket, or on the COB substrate, and is not limited by its shape and size, completely avoiding the use of special expensive solid crystal bonding wire or eutectic soldering equipment and its complicated process; By using the novel semiconductor light-emitting chip, the manufacturing process of the semiconductor lighting fixture can be shortened, the steps are small, the cost is low, the use of a large amount of raw materials can be saved, the weight of the lamp can be reduced, the semiconductor lighting fixture can be simple in structure, convenient to manufacture, and short in heat conduction path. The interface is small and there is no heat conduction bottleneck, which can greatly improve the heat dissipation effect of the whole lamp.

As shown in FIG. 4, it is an embodiment of a novel semiconductor light-emitting chip suitable for reflow soldering, comprising a sapphire substrate 41, an n-type conductive layer 42, a light-emitting layer 43, a p-type conductive layer 44, an n-type electrode 45, P-type electrode 46, n-type pad 45a, p-type pad 46a, metal-based thermal pad 47a, insulating layer 410, 410a, current spreading layer 44b, n-type electrode step 44a, sapphire substrate step 44c, LED holder 420, n-type pad 420a, p-type Pad 420b, heat transfer pad 420c, metal solder 421a, 421b, 421c, and the like. Wherein, the n-type conductive layer, the light-emitting layer and the p-type conductive layer together constitute a semiconductor stack; the sapphire substrate 41, the n-type conductive layer 42, the light-emitting layer 43, the p-type conductive layer 44, the n-type electrode 45, and the p-type electrode 46. The n-type pad 45a, the p-type pad 46a, the metal-based thermal pad 47a, the insulating layers 410, 410a, the p-type current spreading layer 44b, the n-type electrode step 44a, and the sapphire substrate step 44c together constitute the novel The semiconductor light emitting wafer.

The sapphire substrate 41 has a first surface and a second surface, the semiconductor stack is disposed on the first surface, and the second surface serves as a light exiting surface, and light generated by the semiconductor stack is emitted through the second surface. It can be understood that the sapphire substrate 41 can also be made of a substrate made of other materials.

The side surface of the substrate 41 and the side surface of the semiconductor stack are smooth planes, smooth curved surfaces, structured planes, or structured curved surfaces perpendicular or oblique to the first surface of the substrate 41; the structuring includes bumps and jagged One or more.

The n-type electrode step 44a provided on the surface of the semiconductor laminate exposes a portion of the n-type conductive layer 42, and the surface of the formed n-type electrode step 44a is used to form an n-type electrode 45 and/or an n-type current spreading layer. The n-type electrode step 44a may be replaced by an n-type electrode through hole penetrating the p-type conductive layer and the light-emitting layer, and a bottom surface thereof is located in the n-type conductive layer.

The side surface of the n-type electrode step 44a and/or the side wall of the n-type electrode via hole are The first surface of the substrate 41 is a vertical plane or a skewed smooth plane, a smooth curved surface, a structured plane, or a structured curved surface; the structuring includes one or more of concave and convex, sawtooth.

In the present embodiment, a recess that is contracted toward the side of the semiconductor laminate with respect to the edge of the substrate 41 is formed around the semiconductor light-emitting wafer, and the recessed bottom surface is located on or in the first surface of the substrate. The recess forms the sapphire substrate step 44c on the substrate 41. The concave side surface is surrounded by the insulating layer 410a, and generally fills the entire sapphire substrate step 44c, so that the conductive side of the entire semiconductor light emitting chip can be more conveniently wrapped to form insulation.

The insulating layers 410 and 410a respectively coat all exposed, electrically conductive surfaces and sides of the semiconductor light-emitting wafer, and the insulating layers 410 and 410a include hafnium oxide, aluminum oxide, aluminum nitride, tantalum nitride, and the like. In this embodiment, all bare, electrically conductive surfaces and sides include all exposed, electrically conductive surfaces and sides of the semiconductor stack, as shown in Figure 4, n-type not covered by n-type electrodes 45. The exposed surface and bare side of the conductive layer 42, the exposed surface and the bare side of the p-type conductive layer 44 not covered by the p-type electrode 46 and/or the p-type current spreading layer 44b, the surface and side of the p-type current spreading layer 44b, and the light emitting The exposed side of layer 43, the side of n-type electrode step 44a, and the side of sapphire substrate step 44c and its bottom surface.

The insulating layers 410 and 410a may be of the same material or different materials, and the thickness of the thinnest portion is usually greater than 50 nm.

Since the insulating layers 410 and 410a are usually thin layers of light, in order to prevent light from passing through Through the insulating layers 410 and 410a, a light reflecting layer may be deposited on the surfaces of the insulating layers 410 and 410a, or a light reflecting layer may be embedded in the center of the insulating layers 410 and 410a, the light reflecting layer including a silver layer, an aluminum layer, and Prague. One or more of total reflection films (DBR). If the p-type current spreading layer 44b already contains a p-type reflective layer, the portion of the insulating layer covering the p-type current spreading layer 44b may not repeatedly set the light reflecting layer.

Since the entire semiconductor light-emitting wafer is completely wrapped by the insulating layers 410, 410a, it can be used even without potting protection.

A surface of the insulating layer 410 covering the surface of the semiconductor laminate constitutes a soldering surface of the semiconductor light emitting wafer. At least one p-type electrode 46 and at least one n-type electrode 45 are provided on the surface of the insulating layer 410 or the soldering surface, and the p-type electrode 46 and the n-type electrode 45 are insulated from each other, and are connected to the insulating layer 410 through the insulating layer 410, respectively. The p-type conductive layer 44 and the n-type conductive layer 42.

In order to minimize the reduction in the area of the light-emitting layer 43, the n-type electrode step 44a of the n-type electrode 45 should be made as narrow as possible, or replaced by an n-type electrode through hole penetrating the p-type conductive layer and the light-emitting layer. The n-type conductive layer 42 is typically 5-15 times thicker than the p-type conductive layer 44, and has better conductive characteristics, so that its current can be better distributed throughout the n-type conductive layer 42. On the contrary, since the p-type conductive layer 44 is thin and the conductivity is poor, in order to ensure that the current can pass through the light-emitting layer 43 uniformly and vertically, the surface of the p-type conductive layer 44 is covered with the p-type current spreading layer 44b.

The p-type current spreading layer 44b has good electrical conductivity on the one hand and low-resistance or low-resistance ohmic contact with the p-type conductive layer 44 on the other hand. Further, in order to increase the amount of light emitted from the second surface of the substrate, the p-type current spreading layer 44b includes a p-type reflective layer. Therefore, the p-type current spreading layer 44b is usually composed of a p-type conductive expansion layer having a good electrical conductivity, a p-type contact layer, and a p-type reflective layer. The material used for the p-type conductive expansion layer includes one or more of ITO, Ag, Au, Al, Cr, Ti, Pt, Pd, Ni, W, ZnO, and the material used for the p-type contact layer includes ITO, One or more of Ag, Al, Cr, Ti, Pt, Pd, Ni, NiO, ZnO, and a heavily doped low-resistance p-type conductive layer, and the material used for the p-type reflective layer includes Ag, Al, Bragged total reflection film One or more of (DBR). The order of arrangement from the p-type conductive layer 44 is a p-type contact layer, a p-type reflective layer, and a p-type conductive expansion layer. When the p-type conductive expansion layer is transparent, the arrangement order may also be a p-type contact layer, a p-type. Conductive expansion layer, p-type reflective layer.

In the present embodiment, the p-type electrode 46 penetrates the p-type current spreading layer 44b, and is electrically connected to the p-type conductive layer 44 and the p-type current spreading layer 44b; the p-type electrode 46 may also be connected only to the p-type current spreading layer 44b. Contacting and forming a conductive connection with the p-type conductive layer 44 through the p-type current spreading layer 44b; the p-type electrode 46 may also partially penetrate the p-type current spreading layer 44b, and directly contact the p-type conductive layer 44 to form a conductive connection, and the remaining portion is The p-type current spreading layer 44b is in direct contact to form a conductive connection.

It can be understood that n may have the same function and function as the p-type current spreading layer 44b on the surface of the n-type electrode step 44a and/or the bottom surface of the n-type electrode via hole, that is, on the surface of the exposed n-type conductive layer 42. Type current expansion layer.

Further, the light-emitting surface of the semiconductor light-emitting chip is a thinned substrate The second surface of 41 is a smooth planar and/or structured surface, and the structured surface comprises a rough surface comprising a spherical relief surface, a hammered relief surface, and/or pyramidal relief. Of course, the first surface of the semiconductor light-emitting wafer may also be a flat smooth surface or a structured surface; the structured surface includes one or more of a tapered rough surface, a concave-convex surface, and a pyramid-shaped surface.

Since the reflow soldering requires a large area of the soldering surface, the cross-sectional area of the n-type electrode 45 and the p-type electrode 46 is not sufficiently large, and in particular, the cross-sectional area of the n-type electrode 45 is more affected by the n-type electrode step width and/or the n-type electrode via hole. The limitation of the diameter is far from meeting the requirements of the reflow soldering of the metal solders 421a, 421b, so the n-type electrode 45 and the p-type electrode 46 are extended to the periphery at their bare places (of course, they can be extended along one side, multiple sides or four sides). A p-type pad 46a and an n-type pad 45a are formed on the surface of the insulating layer 410. Since the surface of the semiconductor laminate is surrounded by the insulating layers 410 and 410a, the expansion of the n-type electrode 45 and the p-type electrode 46 can be sufficiently exerted, so that the partial insulating layer 410 is wrapped around the semiconductor laminate and the p-type pad 46a. Between the semiconductor stack and the n-type pad 45a. It is to be understood that the p-type pad 46a and the n-type pad 45a may be simultaneously provided as needed, or any one of them may be provided as needed.

Further, a thermal pad 47a may be disposed, which may be disposed between the n-type pad 45a and the p-type pad 46a, and/or between the n-type electrode 45 and the p-type electrode 46; The pad is insulated from the n-type pad 45a and the p-type pad 46a, the n-type electrode 45 and the p-type electrode 46, so that it can be directly connected to the heat sink to improve heat dissipation efficiency. The thermal pad 47a can be gold Base-based thermal pad, usually made of good thermal conductivity metal materials, including silver, aluminum, gold.

Since the light-emitting wafer can reflow its n-type pad 45a, p-type pad 46a and thermal pad 7a to the n-type pad 420a on the holder 420 through the metal solders 421a, 421b, 421c, the p-type pad 420b and the heat conduction Pad 420c, the whole process is simple, and can be replaced by simple and inexpensive reflow soldering equipment and engineering methods compatible with other electronic components to replace the complicated and expensive LED solid crystal wiring equipment and process commonly used, which greatly saves equipment investment and reduces manufacturing cost and Reduce process links.

The bracket 420 may be an LED bracket or a COB substrate, or may be various substrates made of various PCB boards, copper-clad aluminum substrates, and copper-clad ceramic substrates of various shapes and sizes in various application products, including various light boards and lamps. Strips and lampposts, etc.

The illuminating wafer reflowed onto the bracket 420 may further be coated with a fluorescent layer for the purpose of making a white light source, or may be further wrapped by a light-transmitting potting glue, including epoxy resin, silicone rubber, or a lens or a lampshade, or A cofferdam is built around the illuminating wafer, and a fluorescent layer and/or a light-filling potting glue is poured into the dam to achieve the purpose of taking light, mixing light, adjusting the spot, and beam intensity distribution.

A phosphor layer may be applied on the light-emitting surface (ie, the second surface of the substrate) and the light-emitting side of the bare sapphire substrate 41, or the surface of the sapphire substrate (ie, the second surface of the substrate) may be first structured and then coated with a firefly. Light layer to achieve the purpose of improving light efficiency. The luminescent wafer pre-coated with the phosphor layer does not need to be coated with a fluorescent layer after reflowing, so as to simplify the application process. In order to improve light extraction efficiency, a reflective layer, including silver or aluminum, may be added at the interface between the n-type electrode 45 and the p-type electrode 46 and the n-type conductive layer 42 and the p-type conductive layer 44 to reduce the n-type electrode 45 and The p-type electrode 46 contacts the interface to absorb light.

The semiconductor stack is epitaxially grown on a substrate sheet having a diameter (typically greater than 2 inches). Generally, after the wafer processing process is completed, a discrete semiconductor light-emitting wafer is obtained by cutting the thinned substrate sheet according to the size and shape of the semiconductor light-emitting wafer.

As shown in FIG. 5, it is an embodiment of a semiconductor lighting fixture (taking a bulb lamp as an example) fabricated by using the above-mentioned light-emitting chip, comprising a lamp board 51, an electrode pad 53 disposed on the lamp board 51, and heat conduction. Pad 53c, metal solder 54 and 54c, semiconductor light emitting chip 520, phosphor layer 590a, potting body 590, heat sink body 550, conductive line 556, power source 555, lamp head 553, power line 554, lampshade 591, heat conductive pad 53c is connected to the connecting conductor 53d of the heat radiating lamp body 550 and the electrode pad 556a connected to the electrode pad 53. It can be understood that the light board 51 can be a PCB board, a copper-clad ceramic substrate, or a copper-clad aluminum substrate. When the shape of the luminaire changes, the slab can be replaced by a light bar, a lamp post, or the like. If used to prepare LEDs or COBs, the panel 51 is a bracket for making LEDs, including SMD, TOP-SMD, high power brackets, etc., and COB substrates.

As can be seen from FIG. 5, the phosphor layer is directly coated on a lamp board for lamp fabrication instead of a conventional LED bracket or COB substrate; the potting body 590 is also directly disposed on the lamp board for lamp manufacturing. On the 51 instead of the usual LED bracket or COB substrate; the illuminating wafer 520 is not fixed to the bracket or the COB substrate by a commonly used die bonding process, but is directly soldered to the luminaire for fabrication by a simple reflow soldering method. On the light board 51. Obviously, this new type Semiconductor light-emitting chips and their fabrication methods and conventional wafers and processes can be used in the production of lamps, which not only can greatly reduce the process, but also save a lot of raw and auxiliary materials, without using complicated and expensive equipment and technology. Lamp manufacturing costs have fallen dramatically.

As can be further seen from FIG. 5, the semiconductor light-emitting chip 520 is directly in contact with the pad 53 through its pad, and the pad is directly formed on the lamp plate 51 to form the shortest heat dissipation channel and the minimum channel interface, which can be greatly improved. Cooling efficiency improves the reliability of the lamp.

The conductive circuit provided on the lamp board 51 includes an electrode pad 53, an electrode pad 556a, a connection conductor 53d, and the like. The electrode pad 53 includes at least one p-type electrode pad and at least one n-type electrode pad, and is electrically connected to the p-type pad 46a and the n-type pad 45a of the semiconductor light-emitting chip 520, respectively. The electrode pad is connected to the electrode pad 556a, and the electrode pad 556a is further connected to the conductive line 556 to form an electrical connection with the external power source to supply power to the entire semiconductor light emitting chip 520. The connection conductor 53d is connected to the heat dissipation lamp body 550 to provide a heat dissipation path for the entire semiconductor light emitting chip 520.

Further, the conductive circuit may further include an interconnection metal between the pads, between the pads and the pads or the contacts, thereby forming different electrical connections, so that the semiconductor light-emitting wafers 520 may be connected in series, Various connection methods such as parallel connection, serial connection and so on.

The light board 51 is further provided with a heat conducting pad 53c which is thermally connected to the heat conducting pad of the semiconductor light emitting chip 520, and is connected with the p type electrode pad and n The electrode pads are insulated from each other, so that heat generated during operation of the semiconductor light-emitting chip 520 can be transmitted to the lamp board 51 through the independent heat-dissipating passages, and quickly transmitted to the heat-dissipating lamp body 550 through the lamp board 51.

In the production, a conductive circuit is first prepared on the lamp board 51, and the conductive circuit can be made of a metal material such as Fe, Cr, Cu, Ti, Al, Ni, W, Pt, Pd, Ag, Au, Sn, Mo, One or more of its alloys.

Then, a metal-based solder is applied on the p-type electrode pad and the n-type electrode pad, or on the p-type electrode pad, the n-type electrode pad, and the thermal pad (such as 53, 53 in FIG. 5) (eg, 54, 54c) in Fig. 5. The metal-based solder includes one or more of solder paste, AgSn, AgSnAu, AgSnCu, AgSnCuX, SnCu, SnAgBiIn, SnAgBi, SnAgBiX, SnBi, SnAgCuSb, SnAgInCu, InSn, SnCu, SnSb, SnZnX, SnZnBi, wherein X is other Add metal elements.

Then, a semiconductor light-emitting wafer 520 is placed on the p-type electrode pad and the n-type electrode pad, or on the p-type electrode pad, the n-type electrode pad, and the heat conductive pad, so that the p-type pad or the p-type electrode passes The metal-based solder is in close contact with the surface of the p-type electrode pad; the n-type pad or the n-type electrode is in close contact with the surface of the n-type electrode pad by the metal-based solder. Moreover, when the thermal pad is disposed, the thermal pad is adhered to the surface of the thermal pad by the metal-based solder.

Then, it is heated to the soldering temperature of the metal-based solder and kept warm, and the soldering work is performed.

After cooling, complete between the p-type pad or the p-type electrode and the p-type electrode pad An electrically conductive connection, an n-type pad or an electrically conductive connection between the n-type electrode and the n-type electrode pad. Further, the thermal pad is thermally connected to the thermal pad.

If the white light fixture is made, the semiconductor light emitting wafer is wrapped with at least one phosphor layer or phosphor powder layer; or, the phosphor layer or the phosphor powder layer is coated with at least one phosphor powder. The semiconductor light-emitting chip is coated with a semiconductor light-emitting chip having a phosphor layer or a phosphor layer in a package with at least one light-transmissive sealing layer; or the semiconductor light-emitting chip is wrapped with at least one light-transmissive sealing layer.

Finally, after the lamp board is electrically connected with the power source of the lamp, the heat sink body, etc., the assembly of the entire lamp is completed.

Compared with FIG. 3, it is found that since the semiconductor light-emitting chip 520 is directly soldered to the light board 51 by reflow soldering, the structure of the lamp becomes very simple, and the LED package link characterized by the solid crystal bonding wire is omitted, and the LED package is omitted. The LED bracket and the light source module substrate (such as the copper-clad aluminum substrate 31 in FIG. 3) shorten the manufacturing process, reduce the process, and reduce the manufacturing cost. The three-fold repeating as shown in 3 is reduced to a single simple reflow soldering process, saving a lot of raw materials and eliminating the need for complicated and expensive equipment, reducing the weight of the luminaire and further reducing production costs.

Since the heat generated by the semiconductor light-emitting wafer 520 is directly conducted to the heat-conductive pad 53c, the connecting conductor 53d, and the heat-dissipating lamp body 550 through the heat-conductive solder 54c, there is no conductive interface and medium having a high thermal resistance, and the heat-dissipating effect is greatly improved. In addition, the contact of the large-area metal solder 54 with the solder pads on the light-emitting chip 520 can also remove the heat generated by a large number of light-emitting wafers, thereby achieving the purpose of heat dissipation.

Obviously, the novel semiconductor light-emitting chip has the advantages of simple structure and convenient use, and is suitable for directly soldering the light-emitting chip to various substrates in various application products by using a reflow soldering method, including a PCB board, a ceramic copper-clad board, and various LED brackets. Shorten the process flow, reduce the amount of materials used, improve heat dissipation and thermal conductivity, and significantly reduce manufacturing costs.

It can be understood that the above technical features can be used in any combination without limitation.

The above description is only an embodiment of the present invention, and thus does not limit the scope of the patent of the present invention. Any equivalent structure or equivalent process transformation made by using the present specification and the drawings may be directly or indirectly applied to other related technologies. The fields are all included in the scope of patent protection of this new type.

11‧‧‧Substrate

12‧‧‧n type conductive layer

13‧‧‧Lighting layer

14‧‧‧p type conductive layer

15‧‧‧n type electrode

16‧‧‧p-type electrode

19a, 19b‧‧‧Flexible lines

110‧‧‧Insulation

121a, 121b‧‧‧ pads

120‧‧‧ bracket

120a‧‧‧Solid glue

21‧‧‧Substrate

22‧‧‧n type conductive layer

23‧‧‧Lighting layer

24‧‧‧p type conductive layer

25‧‧‧n type electrode

26‧‧‧p-type electrode

26a‧‧‧reflective contact layer

24a‧‧‧n type electrode steps

29a, 29b‧‧‧ eutectic solder

220‧‧‧LED bracket

220a, 220b‧‧‧ pads

210‧‧‧Insulation

381‧‧‧LED

390‧‧‧ potting body

390a‧‧‧Fluorescent layer

320‧‧‧ bracket

380‧‧‧Lighting chip

35‧‧‧ solder pads

34‧‧‧ solder

33‧‧‧ pads

32‧‧‧Insulation

31‧‧‧Aluminum substrate

330‧‧‧Light body plate

350‧‧‧heating lamp body

356‧‧‧Flexible wire

355‧‧‧Power supply

353‧‧‧ lamp holder

354‧‧‧Power cord

391‧‧‧shade

41‧‧‧Substrate

42‧‧‧n type conductive layer

43‧‧‧Lighting layer

44‧‧‧p type conductive layer

45‧‧‧n type electrode

46‧‧‧p-type electrode

45a‧‧n type pad

46a‧‧‧p type solder pad

47a‧‧‧Metal based thermal pad

410, 410a‧‧‧Insulation

44b‧‧‧current expansion layer

44a‧‧‧n type electrode steps

44c‧‧‧Backing steps

420‧‧‧LED bracket

420a‧‧‧n type pad

420b‧‧‧p type pad

420c‧‧‧ Thermal pad

421a, 421b, 421c‧‧‧metal solder

51‧‧‧light board

53‧‧‧electrode pads

53c‧‧‧ Thermal pad

54, 54c‧‧‧Metal solder

520‧‧‧Semiconductor light-emitting chip

590a‧‧‧Fluorescent layer

590‧‧‧ potting body

550‧‧‧heating lamp body

556‧‧‧Flexible wire

555‧‧‧Power supply

553‧‧‧ lamp holder

554‧‧‧Power cord

591‧‧‧shade

53d‧‧‧Connecting conductor

556a‧‧‧Electrode solder joints

1 is a schematic diagram of a conventional semiconductor light emitting wafer structure; FIG. 2 is a schematic diagram of another conventional semiconductor light emitting wafer structure; FIG. 3 is a schematic diagram of a conventional semiconductor lighting fixture structure; and FIG. 4 is a novel semiconductor light emitting wafer structure. A schematic diagram of one embodiment of the present invention; FIG. 5 is a schematic structural view of a semiconductor lighting fixture using the novel implementation.

41‧‧‧Substrate

42‧‧‧n type conductive layer

43‧‧‧Lighting layer

44‧‧‧p type conductive layer

45‧‧‧n type electrode

46‧‧‧p-type electrode

45a‧‧n type pad

46a‧‧‧p type solder pad

47a‧‧‧Metal based thermal pad

410, 410a‧‧‧Insulation

44b‧‧‧current expansion layer

44a‧‧‧n type electrode steps

44c‧‧‧Backing steps

420‧‧‧LED bracket

420a‧‧‧n type pad

420b‧‧‧p type pad

420c‧‧‧ Thermal pad

421a, 421b, 421c‧‧‧metal solder

Claims (7)

A semiconductor light emitting wafer comprising: a substrate having a first surface and a second surface, wherein a first surface of the substrate has a semiconductor stack including at least an n-type conductive layer, a light-emitting layer and a p-type conductive layer The semiconductor laminate surface has at least one n-type electrode step and/or n-type electrode via hole exposing a portion of the n-type conductive layer, wherein all exposed, electrically conductive surfaces and sides of the semiconductor light-emitting wafer are At least one insulating layer is wrapped; the surface of the insulating layer is provided with at least one p-type electrode and at least one n-type electrode; the p-type electrode and the n-type electrode are insulated from each other, and penetrate through the insulating layer respectively The p-type conductive layer and the n-type conductive layer are electrically connected. The semiconductor light-emitting wafer of claim 1, wherein a position of the p-type electrode exposed on a surface of the insulating layer is electrically connected to the p-type electrode and is in close contact with the surface of the insulating layer. a p-type pad such that a portion of the insulating layer is wrapped between the semiconductor stack and the p-type pad; and/or a portion exposed at the surface of the n-type electrode on the surface of the insulating layer is provided An n-type pad electrically connected to the n-type electrode and in close contact with the surface of the insulating layer is such that a portion of the insulating layer is wrapped between the semiconductor laminate and the n-type pad. The semiconductor light-emitting wafer of claim 1 or 2, wherein a recess is formed around the semiconductor light-emitting chip; the recess is located on a side of the semiconductor stack of the semiconductor light-emitting wafer, the inner a concave bottom surface is located in the Within the first surface of the substrate or within the substrate, the concave side and bottom surface are surrounded by at least one insulating layer. The semiconductor light-emitting wafer of claim 3, wherein a p-type current spreading layer is disposed between the surface of the p-type conductive layer and the insulating layer; and the p-type current spreading layer is electrically conductive with the p-type electrode Connecting, the p-type current spreading layer includes one or more of a p-type conductive expansion layer, a p-type reflective layer, and a p-type contact layer; and/or, on the step surface of the n-type electrode or the bottom surface of the n-type electrode via An n-type current spreading layer is disposed between the insulating layer; the n-type current spreading layer is electrically connected to the n-type electrode, and the n-type current spreading layer comprises an n-type conductive expansion layer, an n-type reflective layer, and n One or more of the type of contact layers. The semiconductor light-emitting wafer of claim 4, wherein part or all of the insulating layer comprises a light reflecting layer; the light reflecting layer is located in the middle of the insulating layer or on a bare surface of the insulating layer . The semiconductor light-emitting wafer of claim 4, wherein the substrate is a light-transmitting substrate; the first surface and/or the second surface of the substrate is a flat smooth surface or a structured surface; The surface includes one or more of a tapered rough surface, a concave-convex surface, a pyramidal surface; and/or the substrate side and/or the semiconductor laminate side is perpendicular or oblique to the first surface of the substrate A smooth plane, a smooth surface, a structured plane, or a structured surface; the structuring includes one or more of bumps and serrations. The semiconductor light-emitting wafer of claim 4, wherein Between the p-type electrode and the n-type electrode, there is at least one metal-based thermal pad that is in contact with the surface of the insulating layer, and the thermal pad is insulated from the n-type electrode and the p-type electrode; and/or Between the p-type pad and the n-type pad, there is at least one metal-based thermal pad that is in contact with the surface of the insulating layer, the thermal pad and the n-type pad and the p-type pad They are insulated from each other.