M443921 五、新型說明： 【新型所屬之技術領域】 本新型本實用涉及新塑一種變壓器結構，尤其是可應用於返馳式開關 電源中。 【先前技術】 任何電子產品都需要電源才能正常運作，而所需的電源可由市電、電 池、發電機、太陽能板等裝置而供應，不過這類裝置所供應的電源較不穩 .定，或電壓、電流不適合，因此，常常需要開關電源以改善供應電源，^ 其是返馳式開關電源，其中變壓器更是開關電源產品的核心部件。/因此， 如何設計並製作出優良的變壓器一直是產業界努力的目標。 合適的變壓器结構在電源配套生產廠家中，一般需要花費大量的人力 及財力來研發，以達到具有傳導、共模噪音及輻射彳艮大的餘量，^以帶來 巨大的經濟效益。然而，市面上現有.的開關變壓器結構不僅複雜，且製程 效率低’尤其是研發及生產人力成本高，且料、錄料及㈣餘量小， 甚至一致性相當差。 因此，需要-種變壓器結構，能簡化變壓㈣繞製製 間、並提冑料、雜料及骑’ _顧上^技^^ 【新型内容】 二層中 ^動主要目的是提供—種魏驗構，包括轉、磁芯、初級繞 ，二、明1輔助供電繞組、屏纖組以及次級敎，其中，屏蔽繞組是繞製 獻和她繞組之間，並在纽馳繞製結束後，㈣層料固定， 播心疋ft骨架上相對應的孔洞中，並利用勝帶固定，藉以形成變壓器結 ί腳二ΐ組的兩個線端是分別連接到位於骨架的-端的骨架初級的兩個 接聊’而晶片_供電繞组及屏蔽繞组可位於同一層，或分別設置於相鄰 3 M443921 【實施方式】 以下配合圖式及組件符號對本新型的實施方式做更詳細的說明，以使 得本領域技術人員在研讀本說明書後能據以實施。 參閱第la圖，本新型變壓器結構的示意圖。如第la圖所示，本新型 的變壓器結構包括骨架BK、磁芯(圖中未顯示）、初級繞組]^卜次級繞組 N2#晶片辅助供電繞組N3/N31、以及屏蔽繞組]^，其中骨架Βκ包括初 級=p及次級骨架s，用於分別供初級繞組N1及次級繞組N2繞製且 ，心疋置於骨架BK上相對應的孔洞(圖中未顯示）中，並利用膠帶固定，而 明片輔助供電繞組N3/N31為成對配置’晶片辅助供電繞組N3及觀具有 相同的E數’並位於不同層，由初級繞組隔開。 、初級繞組N卜晶片輔助供電繞組N3細、屏舰組N4可用不種線徑 =而實施’次級繞組N2採用三層絕緣線，·1•晶片輔助供電繞組N31 ，組N4繞製在初級繞feN1和次級繞組N2之間，而晶片輔助供電 、:組N31及屏蔽繞組N4位於同—層，次級繞組n2置於變龍結構的最外 級繞組N2繞製結束後，以兩層料或三層膠帶T固定，藉以形 N31 壓器結構。第1&圖中的區域？是表示包含晶片輔助供電繞組 Γ、ί=，用以區分開屏蔽繞請。因此，在變壓器結構中，初級繞組 利用^ τ =1、^伽供魏組犯細錢·恤祕是相互間 ί 财各個繞组的m是_ m 的變壓j ^新㈣賴讀構的實施繼示意®。第lb圖 _壓器結構’主要差異點在於，第η圖的 第lb Hfm /甘31及屏蔽繞組N4位於不同層，且利用膠帶T隔離開。 ^ lb la , o 離開 9 IT2 * s電源’主要包括安全保護卜交流整流電路2、 4 M443921 輪入EMI抑制及濾波3、返馳開關電路4、吸收電路5、輸出整流濾波電路 6、以及吸收回路7。 安全保護1包括保險絲FUSE，提供安全保護作用，也可進一步連接壓 敏電阻以抗浪湧電壓。交流整流電路2可包括二個二極體或一個二極體所 組成的全波或半波整流，也可以是四個二極體組成的橋式整流器，而第2 圖疋以橋式整流器為範例。輸入EMI抑制及濾波3可包括電感L1及L2、 间壓電解電谷C1及C2，可並提供EMI抑制及濾波功能。L2及L1可以只 用一個或以共模電感器代替。 返馳開關電路4包括本新型的變壓器T1、開關電晶體Q1、電流檢測電 阻R9 '啟動電阻汜及r3及開關控制晶片m，其中變壓器τι (即第ia 圖和第lb目中所禾）的初，級繞組的兩個線端ρι&ρ2分別和吸收電路5令 的總集電源VbUS和開關電晶體Q1的集極相連，次級繞組的兩個線端八及 $別和輸出整猶波電路6中的輸出整流二極體m収端以及輸出渡波 電谷C6的接地端相連。 開關控制晶片U1可為驅動晶片，例如昂寶電子（上海）有限公司生產 二類似功能的控制晶片’且連接必要的外圍輔助組件，比如電阻 口 8 ^關控制晶片m具有脈衝寬度調變(pwM)驅動功能，且可包含6 ^、功旎接腳’但不限於此。 容C6輸^整電门路:括兩個主要部分：輸出整流二極體D7域 ίί ^ 共鶴波€路。吸㈣路7可包括電容C3、電阻R6、以及二 ’尤其是可峨據獨H統要求而變化，盆 關電晶體Q1的集極的電壓尖峰值。 -要目的在於抑制開 =型，特點在於可減少變屋器結構繞製的製程次數 二f 2效率’從而降低籠器的製作成本。本新型的另一特 新型做任解【ί新’並非企圖據以對本 新型的任何㈣繼，__蝴咖作有關本 5 M443921 【圖式簡單說明】 第la圖顯示本新型的變壓器結構的示意圖； 第lb圖顯示本新型的變壓器結構另一實施例的示意圖；以及 第2圖顯示使用本新型的變壓器結構的應用電路示意圖。M443921 V. New description: [New technical field] The new utility of the present invention relates to a new transformer structure, in particular, it can be applied to a flyback switching power supply. [Prior Art] Any electronic product requires a power supply to operate normally, and the required power supply can be supplied by a power supply, a battery, a generator, a solar panel, etc., but the power supply of such a device is unstable, or voltage. The current is not suitable. Therefore, it is often necessary to switch the power supply to improve the power supply. ^ It is a flyback switching power supply, and the transformer is the core component of the switching power supply. / Therefore, how to design and produce excellent transformers has always been the goal of the industry. Appropriate transformer structure in power supply manufacturers generally requires a lot of manpower and financial resources to develop, in order to achieve a large amount of conduction, common mode noise and radiation, so as to bring huge economic benefits. However, the existing switching transformer structure on the market is not only complicated, but also has low process efficiency, especially the high labor cost of R&D and production, and the materials, recording materials and (4) margins are small, and even the consistency is rather poor. Therefore, it is necessary to have a kind of transformer structure, which can simplify the transformation (4) winding system, and raise the materials, miscellaneous materials and riding ' _ Gu Shang ^ technology ^ ^ [New content] The main purpose of the second layer is to provide - Wei The inspection includes rotation, magnetic core, primary winding, second, Ming 1 auxiliary power supply winding, screen fiber group and secondary winding, wherein the shielding winding is wound between her winding and after winding (4) The layer material is fixed, the corresponding hole in the skeleton of the 疋 疋 ft, and is fixed by the win band, thereby forming the transformer knot. The two line ends of the group are respectively connected to the skeleton primary at the end of the skeleton. Two talks' and the wafer_power supply winding and the shield winding can be located on the same layer, or respectively disposed adjacent to the 3 M443921. [Embodiment] The following description is given in more detail with reference to the drawings and component symbols. It can be implemented by those skilled in the art after studying this specification. Referring to Figure la, a schematic diagram of the structure of the new transformer. As shown in FIG. 1a, the transformer structure of the present invention includes a skeleton BK, a magnetic core (not shown), a primary winding, a secondary winding N2# chip auxiliary power supply winding N3/N31, and a shield winding], wherein The skeleton Βκ includes a primary=p and a secondary skeleton s for winding the primary winding N1 and the secondary winding N2, respectively, and the core is placed in a corresponding hole (not shown) on the skeleton BK, and the tape is used. Fixed, while the chip-assisted power supply windings N3/N31 are in a paired configuration 'wafer-assisted power supply winding N3 and view has the same E-number' and are located in different layers separated by the primary winding. , the primary winding N wafer auxiliary power supply winding N3 fine, the screen ship N4 can be used without the wire diameter = and the implementation of the 'secondary winding N2 using three layers of insulated wire, · 1 • chip auxiliary power supply winding N31, group N4 winding at the primary Between the feN1 and the secondary winding N2, and the chip auxiliary power supply, the group N31 and the shielding winding N4 are located in the same layer, and the secondary winding n2 is placed in the outermost winding N2 of the variable structure, and the two layers are completed. The material or the three-layer tape T is fixed to form a N31 press structure. The area in the 1& It means that the chip auxiliary power supply winding Γ, ί= is included to distinguish the shield winding. Therefore, in the transformer structure, the primary winding uses ^ τ =1, ^ 伽 for the Wei group to make fine money, the secret is the mutual λ 各个 各个 各个 各个 各个 各个 各个 各个 各个 各个 各个 各个 各个 各个 各个 ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ Implementation follows the schematic®. The main difference of the lb _ embossor structure is that the lb Hfm / 甘31 of the ηth diagram and the shield winding N4 are located in different layers and are separated by the tape T. ^ lb la , o leave 9 IT2 * s power supply mainly includes safety protection, AC rectification circuit 2, 4 M443921 wheel EMI suppression and filtering 3, flyback switch circuit 4, absorption circuit 5, output rectification filter circuit 6, and absorption Loop 7. Safety protection 1 includes the fuse FUSE, which provides safety protection and can be further connected to a varistor to withstand surge voltage. The AC rectifier circuit 2 may comprise a full-wave or half-wave rectification composed of two diodes or a diode, or a bridge rectifier composed of four diodes, and the second diagram is a bridge rectifier. example. Input EMI suppression and filtering 3 can include inductors L1 and L2, and voltage-voltage electrolysis valleys C1 and C2, and can provide EMI suppression and filtering functions. L2 and L1 can be replaced by only one or a common mode inductor. The flyback switch circuit 4 includes the transformer T1 of the present invention, the switching transistor Q1, the current detecting resistor R9 'starting resistor 汜 and r3, and the switch control chip m, wherein the transformer τι (ie, the ia diagram and the lb head) The two line ends ρι& ρ2 of the primary winding are respectively connected to the collector power supply VbUS of the absorbing circuit 5 and the collector of the switching transistor Q1, and the two line terminals of the secondary winding are connected to the output and the whole circuit circuit. The output rectifying diode m end of 6 is connected to the ground end of the output ferroelectric C6. The switch control chip U1 can be a driving chip, for example, an operating control chip of the same function is manufactured by Angbo Electronics (Shanghai) Co., Ltd. and the necessary peripheral auxiliary components are connected, such as the resistor port 8 ^ control chip m has pulse width modulation (pwM) ) Drive function, and can include 6 ^, power pin 'but not limited to this. Rong C6 transmission ^ integral electric door: including two main parts: output rectifier diode D7 domain ίί ^ Gonghe wave road. The suction (four) way 7 may include a capacitor C3, a resistor R6, and a second term, which may vary depending on the requirements of the system, and the voltage spike of the collector of the transistor Q1 is turned off. - The purpose is to suppress the opening type, which is characterized by reducing the number of processes in which the transformer structure is wound, and the efficiency of the cage is reduced. Another new type of this new model is not solved [ί新] is not intended to be based on any of the new (four), __ 蝴 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ BRIEF DESCRIPTION OF THE DRAWINGS Figure lb shows a schematic view of another embodiment of the transformer structure of the present invention; and Figure 2 shows a schematic diagram of an application circuit using the transformer structure of the present invention.
【主要元件符號說明】 1 安全保護 2 交流整流電路 3 輸入EMI抑制及遽波 4 返馳開關電路 5 吸收電路 6 輸出整流濾波電路 7 吸收回路 A 線端 B 線端 BK 骨架 Cl 高壓電解電容 C2 高壓電解電容 C3 電容 C6 輸出濾波電容 C8 濾波電容 D6 二極體 D7 輸出整流二極體 F 區域 FUSE 保險絲 LI 電感 L2 電感 N1 初級繞組 6 M443921 N2 次級繞組 N3 晶片輔助供電繞組 N31 晶片輔助供電繞組 N4 屏蔽繞組 P 初級骨架 PI 線端 P2 線端 Qi 開關電晶體 R2 啟動電阻 R3 啟動電阻 R6 電阻 R9 電流檢測電阻 S 次級骨架 T 膠帶 T1 變壓器 U1 開關控制晶片 Vbus 總集電源[Main component symbol description] 1 Safety protection 2 AC rectifier circuit 3 Input EMI suppression and chopping 4 Return switch circuit 5 Absorption circuit 6 Output rectifier filter circuit 7 Absorption circuit A Line end B Line end BK Skeleton Cl High voltage electrolytic capacitor C2 High voltage Electrolytic Capacitor C3 Capacitor C6 Output Filter Capacitor C8 Filter Capacitor D6 Diode D7 Output Rectifier Diode F Region FUSE Fuse LI Inductor L2 Inductor N1 Primary Winding 6 M443921 N2 Secondary Winding N3 Wafer Auxiliary Power Supply Winding N31 Chip Auxiliary Power Supply Winding N4 Shielding Winding P Primary Skeleton PI Line End P2 Line Terminal Qi Switching Transistor R2 Starting Resistor R3 Starting Resistor R6 Resistor R9 Current Sense Resistor S Secondary Skeleton T Tape T1 Transformer U1 Switch Control Wafer Vbus Total Power Supply