M443593 五、新型說明： 【新型所屬之技術領域】 本創作是有關於一種研磨墊及基底層，且特別是有關 於一種可使研磨物件表面獲得較佳研磨均勻度之研磨墊及 基底層。 【先前技術】M443593 V. New description: [New technical field] This creation is about a polishing pad and a substrate layer, and in particular relates to a polishing pad and a substrate layer which can achieve a better polishing uniformity on the surface of an abrasive article. [Prior Art]
隨著產業的進步，平坦化製程經常被採用為生產各種 元件的製程。在平坦化製程中，化學機械研磨製程經常為 產業所使用，一般來说，化學機械研磨(chemicai mechanicai polishing，CMP)製程是藉由供應具有化學品混合物之研磨 液於研磨墊上，並對被研磨物件(例如晶圓）施加壓力以將 其壓置於研磨墊上，且使物件及研磨墊彼此進行相對運 動。藉由相對運動所產生的機械摩擦及研磨液的化學作用As the industry progresses, the flattening process is often adopted as a process for producing various components. In the planarization process, the chemical mechanical polishing process is often used in the industry. Generally, the chemical mechanical polishing (CMP) process is performed by supplying a polishing liquid having a chemical mixture onto the polishing pad and grinding it. The article (e.g., wafer) applies pressure to press it against the polishing pad and causes the article and the polishing pad to move relative to each other. Mechanical friction caused by relative motion and chemical action of the slurry
下移除。卩女物件表層，而使其表面逐漸平坦，來達成丰 坦化的目的。 然而，習知之化學機械研磨製程往往會伴隨著研磨率 =均勻的問題。-般來說，研磨墊對被研磨物件邊緣區域 、研磨率會大於或小於被研磨物件中心區域的研磨率，告 j被:磨物件之邊緣研料與巾心研磨率不—致的情況。 =此1 ’相對於被研磨物件的中心區域，上述研磨率不 H通/會導致移除過多位於被研磨物件邊緣區域的材料 域冉的材或無法充分移除位於被研磨物件邊緣區 材抖(稱為研磨不足）。這種研磨率不均勻的現象與被 3 研磨物件本身的形變大小有關’當被研磨物件的形變愈大， 研磨率不均勻的現象愈是嚴重，導致被研磨物件表面上的 邊緣研磨輪廓與中心研磨輪廓的均勻度愈差，進而嚴重影 響被研磨物件上的元件良率及可靠度。 【新型内容】 本創作提供一種研磨墊及基底層，能夠使被研磨物件 的表面獲得較佳的研磨均勻度。 本創作提出一種研磨墊，其包括研磨層以及基底層。 基底層配置於研磨層下方且基底層具有多個封閉式孔^。 上述研磨墊在JIS-L1096標準測試下，其壓縮量大於〇 283 mm ° 本創作另提出一種基底層，其適用於襯墊研磨墊的研 磨層’其特徵在於：基底層具有多個制式孔洞，且研磨 塾在JIS-L1G96標準測試下，其魏量大於〇.283 _。 基於上述，當對被研磨物件施加壓力以將其壓置於研 磨塾上並使被研磨物件及研㈣彼此進行相對運動時，由 作之研磨墊具有足夠大的壓縮量，特別適用於研磨 ”有較大㈣的破研雜件，可以有效改善研磨 現象’有助於使被研雜件的表面獲得較麵均勻度: ，讓本卿之上鱗徵和優點能更賴賴，下文特 舉實―，並配合所_式作詳細說明如下。 【實施方式】 M443593 圖1為本創作一實施例之研磨墊的剖面示意圖。請參 照圖1 ’本實施例之研磨墊100包括研磨層102以及基底 層Γ04。其中，研磨層102係由高分子材料所製成，高分 子材料可例如為聚胺基甲酸醋(polyurethane，PU)、環氧樹 脂（epoxy resin)、酚曱醛樹脂（phenol formaldehyde resin)、三聚氰胺樹脂（melamine resin)以及其他合適 的熱固性樹脂（thermosetting resin)或是熱塑性樹脂 φ (thermoplastic resin)及其組合。研磨層1〇2具有研磨表 面’研磨表面可與被研磨物件直接接觸，其中被研磨物件 例如是晶圓或基材。研磨層102之研磨表面上可形成有微 孔、凹槽及/或貫穿孔圖案。 基底層104適用於襯墊研磨塾1〇〇中的研磨層1〇2， 其中基底層104配置於研磨層102下方，且基底層1〇4具 有多個封閉式孔洞。基底層104例如是由低密度聚乙稀、 或低密度聚乙烯與乙烯醋酸乙烯酯的混合物所製成。在製 程上，基底層104例如是藉由發泡製程而形成多個封閉式 .籲 孔洞，這些孔洞可使基底層104具有一定的壓縮量。其中 須特別注意地是，發泡製程中的發泡時間以及發泡溫度會 影響封閉式孔洞的尺寸大小以及基底層104整體所具有的 孔隙率，連帶地也會影響基底層104所具有的壓縮量。一 般而言’所形成的孔洞尺寸較大，孔隙率也較大，基底層 104就可以具有較大的壓縮量；反之，所形成的孔洞尺寸 較小’孔隙率也較小，基底層104就會具有較小壓縮量。 因此在製造基底層104時，使用者可端視所選用的材料種 5 M443593 類(例如是由低密度聚乙烯、或低密度聚乙烯與乙烯醋酸乙 烯醋的混合物所製成），選擇適當的發泡溫度以及發泡時 間’形成具有一定壓縮量的基底層1〇4。 另外’影響基底層104所具有的壓縮量大小，除了上 述的發泡溫度以及發泡時間之外，尚有基底層1〇4的厚度 大小。一般而言，基底層104的厚度較大，所具有的壓縮 量相對較大；反之，基底層104的厚度較小，所具有的壓 縮量也相對較小。在本實施例中，基底層1〇4例如係為一 單層結構’厚度例如是大於2.4 mm，基底層的硬度例如是 小於 70 Shore A。 值得一提的是，由於本實施例之基底層1〇4具有較大 的壓縮量，可以提升研磨墊1〇〇的整體壓縮量，本實施例 的研磨墊100在JIS-L1096標準測試下，研磨墊10〇的壓 縮量例如是大於0.283 mm，研磨墊1〇〇的壓縮百分比例如 是大於8 %。由於本實施例之研磨墊100具有較大的壓縮 量，因此當使用此研磨墊100對被研磨物件進行研磨時， 被研磨物件可以全面性地與研磨層1〇2貼合並進行相對運 動。如此一來，被研磨物件的整體表面可獲得較佳的均勻 度，以減少研磨墊100對被研磨物件邊緣區域的研磨率會 大於或小於被研磨物件中心區域的研磨率的情形發生，並 減少被研磨物件之邊緣研磨率與中心研磨率產生不一致的 機會；換句話說，不會有過度研磨或是研磨不足的現象產 生。 如圖1所示’研磨墊100更包括第一黏著層1〇6，第 M443593 一黏著層106配置於研磨層102與基底層l〇4之間。第一 黏著層106可用以將研磨層1〇2與基底層1〇4緊密貼合而 升>成雙層研磨墊100，且在進行研磨製程的過程中研磨層 102與基底層104可以保持良好的黏著狀態。其中，第一 黏著層106的材料例如是感壓膠（Pressure Sensitive Adhesive，PSA) ° 另外，在基底層104未與研磨層i〇2接觸的一面會與 φ 第二黏著層108的一面黏合，而第二黏著層108的另一面 則黏合於研磨機台的基座1〇上。第二黏著層可以緊密 貼合基底層104與基座10 ’進而使得研磨墊1〇〇在進行研 磨製程的過程中與研磨機台可以保持良好的黏著狀態。其 中’第二黏著層108的材料例如是感壓膠。 在此實施例中’基底層104係為一單層結構，但事實 上基底層104也可以是多層結構，藉由形成具有多層結構 的基底層104來提高基底層1〇4整體所具有的壓縮量。換 言之，本實施例中是以基底層1〇4係為單層結構為例說 • 明。然而，本創作不限於此，在其他實施例中，基底層 也可以是多層結構，如雙層、三層、四層或其他適當的層 數，本創作並不加以限制。只要使研磨墊1〇〇的整體壓縮 量大於0.283 mm，即為本創作所欲保護的範圍。 圖2為本創作另一實施例之研磨墊的剖面示意圖。在 圖2所示的實施例中，基底層1〇4例如是雙層結構。舉例 而έ，基底層104包括第一基底層1〇4a以及第二基底層 104b。其中，第一基底層l〇4a與第二基底層1〇4b可以選 7 M443593 用同一種材料製成，例如是由低密度聚乙烯、或低密度聚 乙烯與乙烯醋酸乙烯酯的混合物所製成；當然，也可以選 用不同材料製成，本創作並不做此限制。另外，也可以藉 由調整不同的製程條件(例如發泡溫度以及發泡時間）或是 使用不同的材料製成具有不同物性的第一基底層1〇4a與 第二基底層104b，其t物性包括硬度、孔隙度以及壓縮 量。在另一實施例中，第一基底層1〇4a具有多個封閉式孔 洞，第二基底層l〇4b也具有多個封閉式孔洞，此第一、第 二基底層（104a、104b)所具有的孔洞尺寸大小可以是相似鲁 的或疋差異化很大的，端看使用者的需求。而在另一實施 例中，可以只有第一基底層丨04a具有多個封閉式孔洞，第 二基底層104b具有極少數的封閉式孔洞或是完全不含封 閉式孔洞。當然在另一實施例中，可以是第二基底層1〇4b 具有多個封閉式孔洞，第一基底層1〇4a則具有極少數的封 閉式孔洞或是完全不含封閉式孔洞。以上的各種實施例態 樣，本創作均不加以圈限，只要是基底層1〇4(包括第一基 底層104a與第二基底層i〇4b)能提升研磨墊1〇〇整體的壓 鲁 縮量大於0.283 mm，即為本創作所欲保護的範圍。 在製程上，第一基底層l〇4a與第二基底層i〇4b可以分 別各自製成，再藉由一黏著層緊密貼合在一起而形成一具 有雙層結構的基底層104。 因此’研磨墊l〇〇a包括第一黏著層106a、第一黏著層 106b以及第二黏著層1〇8。其中，第一黏著層1〇6a用以黏 合研磨層102與第一基底層i〇4a，第一黏著層i〇6b用以 8 M443593 黏合第一基底層104a與第二基底層l〇4b，第二黏著層ι〇8 則是用以黏合第二基底層l〇4b與研磨機台的基座1〇。前 述第一黏著層（106a、106b)以及第二黏著層108可以確保 在進行研磨製程的過程中，研磨層102與基底層1〇4之間 以及研磨墊100a與研磨機台之間可以保持良好的黏著狀 態。其中’第一黏著層（l〇6a、106b)以及第二黏著層108 的材料例如是感壓膠。 在本實施例中’係利用第一基底層l〇4a與第二基底 ，l〇4b疊合而形成一具有雙層結構的基底層104,藉此提 高研磨墊100整體所具有的壓縮量。如此一來，當使用此 研磨墊100a對被研磨物件進行研磨時，被研磨物件的整體 表面可獲得較佳的均勻度，以減少研磨墊l〇〇a對被研磨物 件邊緣區域的研磨率會大於或小於被研磨物件中心區域的 柯磨率的情形發生，並減少被研磨物件之邊緣研磨率與中 心研磨率產生不一致的機會。 貧驗例 在本創作中，為了證實本創作所提出之研磨墊的效 果’實際做了研磨率實驗。 首先，藉由實際的實驗測試來說明本實施例的研磨墊 之特性。實驗例1是具有單層結構的基底層，如圖1所示。 實驗例2是具有雙層結構的基底層，如圖2所示。以下， 牌實驗例1與實驗例2所構成之研磨塾之特性整理於表一 中’其中壓縮量測試方法是以JIS-L1096標準測試來測量 研磨墊的壓縮量以及壓縮百分比。 9 M443593 表一 研磨墊壓縮 百分比(％) 研磨墊壓 縮量(mm) 基底層硬 度(Shore A) 基底層厚 度(mm) 貫驗例1 8.7 0.325 66 3.73 實驗例2 11.79 0.283 67 2.40 以下，藉由進行實際的研磨率實驗測試來說明本實施 例的研磨墊的效果。實驗例2與比較例1的研磨墊均藉由 黏著層將研磨層與基底層貼合而得。實驗例2以及比較例 1的研磨墊的差異在於：實驗例2採用具有雙層結構之基 底層所製成的研磨墊，如圖2所示，且研磨塾的壓縮量大 於0.283 mm。比較例1採用相同之研磨層，但不同之基底 層，其所製成的研磨墊的壓縮量未大於0.283 mm。在研磨 率實驗測试中，所使用的測試方法是將被研磨物件壓置於 研磨塾上進行研磨後，測量被研磨物件於不同位置上的相 對研磨率，其中相對研磨率是指各點研磨率除以整體平均 研磨率，被研磨物件為晶圓。圖3是實驗例2與比較例工 的相對研磨率與晶圓半徑的關係圖。 請參照圖3,由實驗例2與比較例1的實驗結果可知， 使用比較例1之研磨墊進行研磨程序後，晶圓的邊緣區域 的相對研磨率小於晶圓的中心區域的相對研磨率，導致被 研磨物件之研磨表面的均勻度不佳。相較之下，使用實驗 例2之研磨墊進行研磨程序後，晶圓的邊緣區域的相對研 磨率與晶圓的中心區域的相對研磨率較為一致，藉此，被 研磨物件可獲得均勻度較佳之被研磨表面。 S ^ 综上所述，當對被研磨物件施加壓力以將其壓置於研 磨墊上並使物件及研磨墊彼此進行相對運動時了由於本創 M443593 ’可以有效地提升研磨墊 Ϊ大^的被研磨物件，可以有效改善研磨不均勾的現 ’有助於使被研磨物件的表面獲得較佳的均勻度。換言 之被研磨物件邊緣區域的研磨率與被研磨物件中心區域 =研磨率能夠較為—致’進而提升被研磨物件表面上的邊 、、研磨輪廟與中心研磨輪廓的均勻度。Remove it. The surface of the prostitute object is flattened to achieve a richer purpose. However, conventional chemical mechanical polishing processes are often accompanied by problems of abrasive rate = uniformity. Generally speaking, the polishing pad has an abrasive rate on the edge region of the object to be polished, and the polishing rate is greater than or less than the polishing rate in the central region of the object to be polished, and the edge of the abrasive article is not in the same manner as the edge polishing rate. = this 1 'relative to the central area of the object to be abraded, the above-mentioned grinding rate is not H-pass / will result in the removal of too much material in the material domain located in the edge region of the object being polished or the inability to adequately remove the material located at the edge of the object being polished (called insufficient grinding). This uneven grinding rate is related to the deformation of the 3 abrasive article itself. 'The larger the deformation of the object to be polished, the more the unevenness of the grinding rate is, resulting in the edge grinding contour and center on the surface of the object to be polished. The worse the uniformity of the abrasive profile, which in turn seriously affects the component yield and reliability on the object being polished. [New content] This creation provides a polishing pad and a substrate layer to achieve better polishing uniformity on the surface of the object to be polished. The present application proposes a polishing pad comprising an abrasive layer and a substrate layer. The base layer is disposed under the polishing layer and the base layer has a plurality of closed holes. The above polishing pad has a compression amount of more than 〇283 mm ° under the JIS-L1096 standard test. The present invention further proposes a base layer suitable for the abrasive layer of the pad polishing pad, which is characterized in that the base layer has a plurality of standard holes. And the grinding enthalpy is under the JIS-L1G96 standard test, and its amount is greater than 283.283 _. Based on the above, when pressure is applied to the object to be ground to press it on the grinding bowl and the workpiece and the workpiece are moved relative to each other, the polishing pad has a sufficiently large amount of compression, which is particularly suitable for grinding. There are large (four) broken research pieces, which can effectively improve the grinding phenomenon', which helps to obtain the uniformity of the surface of the researched parts:实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施The base layer Γ 04. The polishing layer 102 is made of a polymer material, and the polymer material may be, for example, polyurethane, PU, epoxy resin or phenol formaldehyde. Resin), melamine resin and other suitable thermosetting resins or thermoplastic resins φ (thermoplastic resin) and combinations thereof. The surface 'abrasive surface can be in direct contact with the object to be polished, wherein the object to be polished is, for example, a wafer or a substrate. Micropores, grooves and/or through-hole patterns can be formed on the abrasive surface of the polishing layer 102. The polishing layer 1〇2 in the spacer polishing layer, wherein the substrate layer 104 is disposed under the polishing layer 102, and the substrate layer 1〇4 has a plurality of closed holes. The substrate layer 104 is, for example, a low-density polyethylene. a mixture of dilute or low density polyethylene and ethylene vinyl acetate. In the process, the base layer 104 is formed, for example, by a foaming process to form a plurality of closed-type holes, which can make the base layer 104 have A certain amount of compression, in which it is important to note that the foaming time and foaming temperature in the foaming process affect the size of the closed pores and the porosity of the base layer 104 as a whole, and also affect the base layer. The amount of compression that 104 has. Generally speaking, the hole size formed is larger and the porosity is larger, and the base layer 104 can have a larger compression amount; otherwise, the hole size formed. The small 'poreness is also small, and the base layer 104 has a smaller amount of compression. Therefore, when manufacturing the base layer 104, the user can look at the selected material type 5 M443593 (for example, by low density polyethylene, or A mixture of low-density polyethylene and ethylene vinyl acetate vinegar), selecting an appropriate foaming temperature and foaming time to form a base layer 1〇4 having a certain amount of compression. In addition, 'affecting the amount of compression of the base layer 104 In addition to the above-mentioned foaming temperature and foaming time, there is still a thickness of the base layer 1〇4. In general, the base layer 104 has a relatively large thickness and a relatively large amount of compression; Layer 104 has a relatively small thickness and a relatively small amount of compression. In the present embodiment, the base layer 1〇4 is, for example, a single layer structure. The thickness is, for example, greater than 2.4 mm, and the hardness of the base layer is, for example, less than 70 Shore A. It is worth mentioning that, because the base layer 1〇4 of the embodiment has a large compression amount, the overall compression amount of the polishing pad 1〇〇 can be improved, and the polishing pad 100 of the embodiment is tested under the JIS-L1096 standard test. The amount of compression of the polishing pad 10 例如 is, for example, greater than 0.283 mm, and the percentage of compression of the polishing pad 1 例如 is, for example, greater than 8%. Since the polishing pad 100 of the present embodiment has a large amount of compression, when the polishing pad 100 is used to grind the object to be polished, the object to be polished can be integrally bonded to the polishing layer 1 to perform relative motion. In this way, the uniform surface of the object to be polished can obtain better uniformity, so as to reduce the occurrence rate of the polishing rate of the polishing pad 100 on the edge region of the object to be polished to be larger or smaller than the polishing rate in the central region of the object to be polished, and reduce The edge grinding rate of the object to be polished is inconsistent with the center grinding rate; in other words, there is no excessive grinding or insufficient grinding. As shown in FIG. 1, the polishing pad 100 further includes a first adhesive layer 1〇6, and an adhesive layer 106 is disposed between the polishing layer 102 and the base layer 104. The first adhesive layer 106 can be used to adhere the polishing layer 1〇2 to the base layer 1〇4 to form a double-layer polishing pad 100, and the polishing layer 102 and the base layer 104 can be maintained during the polishing process. Good adhesion. The material of the first adhesive layer 106 is, for example, Pressure Sensitive Adhesive (PSA) °. Further, the surface of the base layer 104 that is not in contact with the polishing layer i〇2 is bonded to one side of the φ second adhesive layer 108. The other side of the second adhesive layer 108 is bonded to the base 1 of the polishing machine. The second adhesive layer can closely adhere to the base layer 104 and the base 10' so that the polishing pad 1 can maintain a good adhesion state with the polishing machine during the grinding process. The material of the second adhesive layer 108 is, for example, a pressure sensitive adhesive. In this embodiment, the base layer 104 is a single layer structure, but in fact, the base layer 104 may also be a multilayer structure, and the base layer 104 having a multilayer structure is formed to improve the compression of the base layer 1〇4 as a whole. the amount. In other words, in the present embodiment, the base layer 1〇4 is a single layer structure as an example. However, the present invention is not limited thereto, and in other embodiments, the base layer may also be a multi-layer structure such as two-layer, three-layer, four-layer or other suitable layers, and the creation is not limited. As long as the overall compression of the polishing pad 1 is greater than 0.283 mm, it is the scope of the creation of the creation. 2 is a schematic cross-sectional view of a polishing pad according to another embodiment of the present invention. In the embodiment shown in Fig. 2, the base layer 1〇4 is, for example, a two-layer structure. For example, the base layer 104 includes a first base layer 1〇4a and a second base layer 104b. Wherein, the first base layer 104a and the second base layer 1〇4b may be made of the same material as 7 M443593, for example, made of low density polyethylene or a mixture of low density polyethylene and ethylene vinyl acetate. Of course, it can also be made of different materials. This creation does not make this limitation. In addition, the first substrate layer 1〇4a and the second substrate layer 104b having different physical properties may be formed by adjusting different process conditions (for example, foaming temperature and foaming time) or using different materials, and the physical properties thereof may be Includes hardness, porosity, and compression. In another embodiment, the first substrate layer 〇4a has a plurality of closed holes, and the second substrate layer 1-4b also has a plurality of closed holes, the first and second substrate layers (104a, 104b) The size of the holes can be similar to that of Lu or 疋, which is very different from the user's needs. In yet another embodiment, only the first substrate layer a04a may have a plurality of closed holes, and the second substrate layer 104b may have a very small number of closed holes or no closed holes at all. Of course, in another embodiment, the second substrate layer 1〇4b may have a plurality of closed holes, and the first substrate layer 1〇4a has a very small number of closed holes or no closed holes at all. In the above various embodiments, the present invention is not limited, as long as the base layer 1〇4 (including the first base layer 104a and the second base layer i〇4b) can improve the overall pressure of the polishing pad 1 The shrinkage is greater than 0.283 mm, which is the scope of the creative protection. In the process, the first base layer 104a and the second base layer i4b may be separately formed, and then adhered together by an adhesive layer to form a base layer 104 having a double layer structure. Therefore, the polishing pad 10a includes a first adhesive layer 106a, a first adhesive layer 106b, and a second adhesive layer 1〇8. The first adhesive layer 1〇6a is used to bond the polishing layer 102 and the first base layer i〇4a, and the first adhesive layer i〇6b is used to bond the first base layer 104a and the second base layer 104B with 8 M443593. The second adhesive layer 〇8 is used to bond the second base layer 104b to the base 1 of the grinding machine. The foregoing first adhesive layer (106a, 106b) and the second adhesive layer 108 can ensure that the polishing layer 102 and the base layer 1〇4 and the polishing pad 100a and the polishing machine stand can be well maintained during the polishing process. Adhesive state. The material of the first adhesive layer (10a, 106b) and the second adhesive layer 108 is, for example, a pressure sensitive adhesive. In the present embodiment, the base layer 104 having a two-layer structure is formed by laminating the first base layer 104a and the second substrate, 104b, thereby increasing the amount of compression of the entire polishing pad 100. In this way, when the object to be polished is polished by using the polishing pad 100a, the overall surface of the object to be polished can obtain better uniformity, so as to reduce the polishing rate of the polishing pad 10a to the edge region of the object to be polished. It occurs more or less than the crevice rate of the central region of the object to be polished, and reduces the chance that the edge grinding rate of the object to be polished is inconsistent with the center grinding rate. Poor test cases In this creation, in order to confirm the effect of the polishing pad proposed in this creation, an actual grinding rate experiment was performed. First, the characteristics of the polishing pad of this embodiment will be explained by actual experimental tests. Experimental Example 1 is a base layer having a single layer structure as shown in FIG. Experimental Example 2 is a base layer having a two-layer structure as shown in FIG. Hereinafter, the characteristics of the polishing crucibles composed of the experimental examples 1 and 2 are summarized in Table 1. The compression amount test method measures the compression amount and the compression percentage of the polishing pad by the JIS-L1096 standard test. 9 M443593 Table 1 Abrasive pad compression percentage (%) Abrasive pad compression (mm) Base layer hardness (Shore A) Base layer thickness (mm) Test example 1 8.7 0.325 66 3.73 Experimental example 2 11.79 0.283 67 2.40 or less, by An actual polishing rate experimental test was performed to illustrate the effect of the polishing pad of the present embodiment. The polishing pads of Experimental Example 2 and Comparative Example 1 were obtained by laminating a polishing layer and a base layer by an adhesive layer. The polishing pad of Experimental Example 2 and Comparative Example 1 differed in that Experimental Example 2 employed a polishing pad made of a base layer having a two-layer structure, as shown in Fig. 2, and the amount of compression of the polishing crucible was larger than 0.283 mm. Comparative Example 1 used the same polishing layer, but different base layers, the compression of the polishing pad produced was not more than 0.283 mm. In the grinding rate experimental test, the test method used is to measure the relative polishing rate of the object to be polished at different positions after the object to be polished is pressed onto the grinding crucible, wherein the relative grinding rate refers to grinding at each point. The rate is divided by the overall average polishing rate, and the object to be polished is a wafer. Fig. 3 is a graph showing the relationship between the relative polishing rate and the wafer radius in Experimental Example 2 and Comparative Example. Referring to FIG. 3, it can be seen from the experimental results of Experimental Example 2 and Comparative Example 1 that the relative polishing rate of the edge region of the wafer is smaller than the relative polishing ratio of the central region of the wafer after the polishing process is performed using the polishing pad of Comparative Example 1. The uniformity of the abrasive surface of the object to be polished is poor. In contrast, after the polishing process using the polishing pad of Experimental Example 2, the relative polishing rate of the edge region of the wafer is relatively uniform with the relative polishing rate of the central region of the wafer, whereby the uniformity of the object to be polished can be obtained. The surface is polished. S ^ In summary, when pressure is applied to the object to be ground to press it on the polishing pad and the object and the polishing pad are moved relative to each other, the original M443593' can effectively enhance the polishing pad. Grinding the object, which can effectively improve the unevenness of the grinding, helps to obtain better uniformity of the surface of the object to be polished. In other words, the polishing rate of the edge region of the object to be polished and the center region of the object to be polished = the polishing rate can be relatively high, thereby improving the uniformity of the edge on the surface of the object to be polished, the grinding wheel temple and the center grinding profile.
雖然本創作已以實施例揭露如上，然其並非用以限定 本創作，任何所屬技術領域中具有通常知識者在不脫離 本創作之精神和範圍内，當可作些許之更動與潤飾，故本 創作之保護範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 圖1為本創作一實施例之研磨墊的剖面示意圖。 圖2為本創作另一實施例之研磨墊的剖面示意圖。 圖3是實驗例2與比較例1的相對研磨率與晶圓半徑 籲的關係圖。 【主要元件符號說明】 10 :基座 100、100a :研磨墊 102 :研磨層 104 :基底層 104a :第一基底層 11 M443593 一黏著層 104b :第二基底層 106a、106b、106 : 108 :第二黏著層 12Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any person having ordinary knowledge in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of protection of the creation shall be subject to the definition of the scope of the patent application attached. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic cross-sectional view showing a polishing pad according to an embodiment of the present invention. 2 is a schematic cross-sectional view of a polishing pad according to another embodiment of the present invention. Fig. 3 is a graph showing the relationship between the relative polishing rate and the wafer radius of Experimental Example 2 and Comparative Example 1. [Main component symbol description] 10: susceptor 100, 100a: polishing pad 102: polishing layer 104: base layer 104a: first base layer 11 M443593 an adhesive layer 104b: second base layer 106a, 106b, 106: 108: Two adhesive layers 12