TWM441920U - Carrier structure having three-dimensional capacitor - Google Patents

Description

M441920 V. New Description: [New Technology Field] [0001] This author is about a carrier structure, especially for a carrier structure with a three-dimensional capacitor. [Prior Art] [0002] Conventional capacitors are independently fabricated into a single package component, soldered to a PCB substrate using SMT (Surface Adhesion Technology), or Flip-chip flip-chip technology (eg, COF) on a flexible board. The internal circuit is connected to the chip. However, with the advancement of the integrated circuit process technology, various electronic components are moving toward high integration, high speed operation and miniaturization. Therefore, the process and space required for the fabrication and setting of the capacitor are known. Has not met the demand. [New content] [0003] The main purpose of the present invention is to provide a carrier structure with a stereo capacitor, comprising a substrate and at least one stereo capacitor, the substrate having a surface and at least one circuit layer, the circuit layer Formed on the surface, and the circuit layer has at least one first contact and at least one second contact, the three-dimensional capacitor is integrally formed with the circuit layer of the substrate, and the three-dimensional capacitor and the circuit layer are the same material The three-dimensional capacitor has a first capacitor portion and a second capacitor portion having a polarity opposite to the first capacitor portion. The first capacitor portion has a first end, a second end, and at least a first portion. Having at least one second segment connecting the first segment and at least one first channel between the first segment and the second segment, the second capacitive portion is formed in the first channel, and The second capacitor portion has a third end, a fourth end, at least a third segment, at least one fourth segment connecting the third segment, and at least one of the third segment and the fourth portion Section 1012042573-0 Page 3 of 17 M 441920 _ second channel 'the second channel money passes the first channel, the first electric valley portion is located in the second channel and the __ end system corresponds to the third end 'the first end end connection The first contact is connected to the second contact. Since the three-dimensional capacitor is integrally formed with the circuit layer, the three-dimensional capacitor d-carrier structure has the characteristics of lighter and thinner, and does not need to additionally solder the capacitor to the carrier, thereby simplifying the process. [0004] Referring to FIG. 1 , a first embodiment of the present invention, a carrier structure 100 having a three-dimensional capacitor includes a substrate 11 〇 and at least one solid capacitor 120 , the substrate 110 having A surface lu and at least one circuit layer 112, the circuit layer 112 is formed on the surface m, and the circuit layer 112 has at least one first contact! In the present embodiment, the material of the circuit layer 112 is copper, and the three-dimensional capacitor 120 is integrally formed with the circuit layer 112 of the substrate 110 and the three-dimensional capacitor 120 and the circuit layer 112 are made of the same material, and the three-dimensional capacitor 12 has a first capacitor portion 121 and a second capacitor portion 122 opposite in polarity to the first capacitor portion 121, and the stereo capacitor 12 is In the present embodiment, the circuit layer 112 has a first thickness n, the first capacitor portion 121 has a second thickness T2, and the second capacitor portion 122 has a third thickness Τ3. The second thickness Τ2 and the third thickness Τ3 are not less than the first thickness Τ1. When the process is a photoresist process, the second thickness Τ2 and the third thickness Τ3 are equal to the first thickness τι, when the process is two In the photoresist process, the second thickness Τ2 and the third thickness 33 are greater than the first thickness Τ1. In this embodiment, the second thickness Τ2 and the third thickness Τ3 are greater than the first thickness τι. Preferably, the second thickness Τ2 and the third thickness Τ3 are the same, please Referring to the figure, the first 10121323^^^^ Α0101, 4th, and 17th, 1012042573-0, M441920 121 has a first end i2ia, a second end 1211), at least a first section 121c, at least A first segment is connected to the first segment. a second section i21d and at least one first channel P1 between the first section 12ic and the second section i2ld. In this embodiment, the first end 121a is located in the first section 121c The second end portion 121b is located in the second portion 121d. The second capacitor portion 122 is formed in the first channel pi, and the second capacitor portion 122 has a third end i22a and a fourth end 122b. At least one third section 122c, at least one connected to the third section 122 (the fourth section I22d and at least one second channel P2 between the third section 122C and the fourth section I22d) The second channel P2 is connected to the first channel pi. The third terminal 122a is located in the third segment 122c. The fourth terminal 122b is located in the fourth segment 122d. The second end P12 corresponds to the third end 122a, and the second end 12b corresponds to the fourth end 122b. The first end 121a is connected to the first contact 112a' The third end 122a is connected to the second contact 112b, and the first section 121c and the third section 122c have a first spacing D1 'the third section 122c and the second section I21d have a second spacing D2', the first spacing D1 is equal to the second spacing D2, and the fourth section 1 22d and the second section 1 2Id have a third pitch D3 and the third pitch D3 are equal to the first pitch di, that is, the first pitch di, the second pitch D2, and the third pitch D3 are equal" The opposite polarity of the metal is sandwiched between air. Therefore, the stereo capacitor 120 can be called an air capacitor. In addition to the filtering function, it also has the function of storing electric energy, and the stereo capacitor 12 is connected to the circuit layer. 112 - Body molding, so the carrier structure 1 with a three-dimensional capacitor has a lighter and thinner feature, and does not need to additionally solder the capacitor to the carrier, 1〇121323#单编号除1 Page 5 / Total Page 17 1012042573-0 M441920 has the effect of simplifying the process. Please refer to Fig. 2, which is a second embodiment of the present invention. A carrier structure 100 with a three-dimensional electric valley is provided with a substrate 110 and at least one solid capacitor. 120 and an insulating layer 130, the substrate 11 has a surface and At least one circuit layer 112, and the circuit layer 112 has at least one first contact 112a and at least one second contact n2b. The stereo capacitor 12 is integrally formed with the circuit layer 112 of the substrate 110 and the solid The capacitor 12 〇 and the circuit layer 112 are made of the same material, and the stereo capacitor 12 has a first capacitor portion 121 and a second capacitor portion 122 opposite in polarity to the first capacitor portion 121 , and the stereo capacitor 120 is The first capacitor portion 121 has a first end i21a ′—the second end 121 b ′ at least a first region gt k1 21 c , at least a second segment i 21 d and at least one first channel pi. An electric valley portion 122 is formed on the first channel P1, and the second capacitor portion 122 has a third end 122a, a fourth end 122b, at least a third segment 122c, and at least a fourth segment i22d. And at least one second channel P2, the second channel P2 is connected to the first channel pi. In this embodiment, the second embodiment is different from the first embodiment in the carrier structure of the three-dimensional capacitor. The insulating layer 13 〇 is further included, and the insulating layer 13 is formed on the first channel P1 The second passage P2 to replace the air, and the insulating layer 130 are helical, based material of the insulating layer is selected from the no brewing polyalkylene amine (Polyimide, PI), benzocyclobutene (

Benzocyclobutene, BCB), ink, m〇iding compound or underfill. Since the three-dimensional capacitor 120 and the circuit layer U2 are integrally formed by the technology of the redistribution circuit layer in the semiconductor process, the dielectric constants of the insulating layers of different materials are also different. Therefore, the insulating layer can be selected according to the required capacitance value. 13〇材料1012042573-0 10121323^单单A〇1〇l Page 6 of 17 M441920 ο Please refer to Figure 3, which is the third embodiment of the creation, a load-bearing structure with a stereo capacitor 200 The substrate 210 and the at least one solid capacitor 220 have a surface 211 and at least one line 'layer 212'. The circuit layer 212 is formed on the surface 211. In this embodiment, the circuit layer 212 The material is made of copper, and the circuit layer 212 has at least one first contact 212a and at least one second contact 2i2b. The three-dimensional electric valley 220 is formed integrally with the remote circuit layer 212·~~ The three-dimensional capacitor 220 and the circuit layer 212 are made of the same material. The three-dimensional capacitor 220 has a first capacitor portion 221 and a polarity opposite to the first capacitor portion 22, and the second valley portion 222. The circuit layer 212 has one a thickness T1, the first capacitor portion 221 has a second thickness T2, and the second capacitor portion 222 has a third thickness T3, and the second thickness T2 and the third thickness T3 are not less than the first The thickness T1, and the second thickness T2 and the second thickness T3 are the same. The first capacitor portion 221 has a first end 221a, a first end 22lb, at least a first segment 22lc, and at least a second segment 221d connecting the first segment 221c and at least one first channel ρι between the first segment 221c and the second segment 221 (1 in the embodiment, the first The second end portion 221 is formed in the first channel 221c, and the second capacitor portion 222 has a third end 222a, a fourth end 222b, and at least one a third section 222c, at least one connected to the third section 22 and a fourth section 222d, and at least one second channel P2' between the third section 222c and the fourth section 222 (1) The second channel P2 is connected to the first channel p. The third terminal 222a is located in the third segment mc, and the first capacitor portion 221 is located in the second channel P2 and the One end 221a of the second group corresponding to a single production 1〇121323 A01〇l Page number 7 / total 17 1012042573-0 M441920

The second end 222a is connected to the fourth end 222b, the first end 221a is connected to the first contact 212a, and the third end 222a is connected to the second contact 212b. A first spacing D1 is formed between the segment 221c and the third segment 222c, and a second spacing!>2 is formed between the third segment 222c and the second segment 221d. The second section 222d and the second section 221d have a third spacing D3 between the first section 221c and the fourth section 222d. a fourth pitch D4, the third pitch D3 being equal to the fourth pitch D4′ and the third pitch D3 being equal to the first pitch, that is, the first pitch D1, the second spacing], and the third The pitch D3 and the fourth pitch D4 are equal. In the present embodiment, the third embodiment is different from the first embodiment in that the three-dimensional capacitor 220 is in the shape of a comb.

Referring to FIG. 4 , which is a fourth embodiment of the present invention, a carrier structure 2 having a three-dimensional capacitor includes a substrate 21 , at least one solid capacitor 220 , and an insulating layer 230 . a surface 211 and at least one circuit layer 212, the circuit layer 212 having at least a first interface 212a and at least a second contact 212b. The solid capacitor 220 is formed integrally with the circuit layer 212 of the substrate 210. The three-dimensional capacitor 220 and the circuit layer 212 are made of the same material. The three-dimensional capacitor 220 has a first capacitor portion 221 and a second capacitor portion 222 having a polarity opposite to the first capacitor portion 221. In this embodiment, The first capacitor portion 221 has a first end 221a, a second end 221b, at least one first segment 22 lc, at least a second segment 221 d and at least In the first channel P1, the second capacitor portion 222 is formed on the first channel P1, and the second capacitor portion 222 has a third end 222a, a fourth end 222b, at least ~ Third section 222c, at least one fourth section A0101 Page 8 / Total 17 pages 1012 042573-0 M441920

222d and at least one second channel P2, the second channel P2 is connected to the first channel P1, the first capacitor portion 221 is located in the second channel P2 and the first end 221a corresponds to the third end 222a. The second end 221b corresponds to the fourth end 222b, the first end 221a is connected to the first contact 212a, and the third 222a is connected to the second contact 212b, the fourth embodiment and the third The embodiment is different in that the carrier structure 200 having a three-dimensional capacitance further includes the insulating layer 230. The insulating layer 230 is formed on the first channel P1 and the second channel P2, and the insulating layer 230 is S. The material of the insulating layer 230 may be selected from polyimide (PI), Benzocyclobutene (BCB), ink, molding compound or underfill.

Please refer to the figures 1, 2, 3 and 4 again, because the three-dimensional capacitors 120 and 220 in the three-capacitor carrier structure 100 and 200 and the circuit layers 112 and 212 are integrally formed by the technology of the redistribution circuit layer. And the three-dimensional capacitors 120 and 220 are formed by air between the opposite polarity metals, thereby reducing the cost of the SMT passive component production line and the package, and there is no need to worry about the parasitic capacitance increasing and the point defects causing leakage. Can greatly increase yield and reduce measurement costs. The scope of protection of this creation is subject to the definition of the scope of the patent application, and any changes and modifications made by those skilled in the art without departing from the spirit and scope of this creation are within the scope of protection of this creation. . BRIEF DESCRIPTION OF THE DRAWINGS [0005] Fig. 1 is a perspective view showing a structure of a carrier having a three-dimensional capacitance according to a first embodiment of the present invention. 1()121323f单单A0101 Page 9/Total page 1012042573-0 M441920 Fig. 2 'A perspective view of a carrier structure with a three-dimensional capacitor according to the second embodiment of the present invention>> Fig. 3: According to the present The third embodiment of the creation, another vertical chain diagram of the carrier structure with a stereo capacitor. Fig. 4 is a perspective view showing another structure of a carrier having a three-dimensional capacitance in accordance with a fourth embodiment of the present invention. [Main component symbol description] [0006] 100 stereo capacitor carrier structure 110 substrate 111 surface 112 circuit layer 112a first contact 112b second contact 120 stereo capacitor 121 first capacitor portion 121 a first end 121b second End 121 c first section 121d second section 122 second capacitor portion 122a third end 122b fourth end 122c third section 122d fourth section 130 insulation layer 200 with a three-dimensional capacitance carrier structure 210 substrate 211 surface 212 circuit layer 212a first contact 212b second contact 220 stereo capacitor 221 first capacitor portion 2 21 a first end 221b second end 221c first segment 221d second segment 222 second capacitor 222a third end 222b fourth end page 10 222d fourth district / a total of 17 pages

222c third section 10121323^single number·A0101 1012042573-0 M441920 230 insulation layer D1 D2 second pitch D3 D4 fourth pitch P1 P2 second channel T1 T2 second thickness T3 first pitch third pitch first channel a thickness of the third thickness

1〇12132#单号 A0101 Page 11 of 17 1012042573-0

Claims (1)

M441920 VI. Patent application scope: 1. A carrier structure having a three-dimensional capacitor, comprising at least: a substrate having a surface and at least one circuit layer, the circuit layer is formed on the surface, and the circuit layer is Having at least one first contact and at least one second contact; and at least one three-dimensional capacitor integrally formed with the circuit layer of the substrate, and the three-dimensional capacitor and the circuit layer are the same material, and the three-dimensional capacitor has a first capacitor portion and a second capacitor portion having a polarity opposite to the first capacitor portion, the first capacitor portion having a first end, a second end, at least one first segment, and at least one connection a second section of a section and at least one first channel between the first section and the second section, the second capacitor portion is formed in the first channel, and the second capacitor portion is The first end of the third section and the fourth section Two channels, the second channel is connected to the first Channel, the first capacitor portion located at the second line and the first end of the channel system corresponding to the third terminal, the first terminal connected to the first contact line, the third terminal connected to the second contact line. 2. The carrier structure having a three-dimensional capacitor according to claim 1, wherein the first section and the third section have a first spacing, the third section and the second There is a second spacing between the segments, and a third spacing between the fourth segments and the second segments. 3. The carrier structure with a three-dimensional capacitor as described in claim 2, wherein the first pitch is equal to the second pitch. 4. The carrier structure with a three-dimensional capacitor according to claim 1, further comprising an insulating layer formed on the first channel and the second channel, and the insulating layer is 嫘Spin shape. 1()121323f单单号A0101, page 12/17 of 1012042573-0, the carrier structure of the three-dimensional capacitor of claim 1, further comprising an insulating layer formed on the first a channel and the second channel, and the insulating layer is s-shaped. The carrier structure having a three-dimensional capacitor as described in claim 1, wherein the circuit layer has a first thickness, the first capacitor portion has a second thickness, and the second capacitor portion has a third thickness, the second thickness and the third thickness are not less than the first thickness. γ • A carrier structure having a three-dimensional capacitor as described in claim 1 wherein the three-dimensional capacitor is a comb. The carrier structure having a three-dimensional capacitor as described in claim 1, wherein the three-dimensional capacitor is spiral. 9. The carrier structure having a three-dimensional capacitor according to claim 6, wherein the second thickness and the third thickness are the same. 10. The carrier structure having a three-dimensional capacitor according to claim 2, wherein the first segment and the fourth segment have a fourth pitch, and the third pitch is equal to the Fourth spacing. 11. The carrier structure having a three-dimensional capacitor according to claim 2, wherein the third pitch is equal to the first pitch. 12. The carrier structure having a three-dimensional capacitor according to claim 1, wherein the circuit layer is made of copper. 13. The carrier structure having a three-dimensional capacitor according to claim 4 or 5, wherein the material of the insulating layer is selected from the group consisting of polyimide (polyimide) and benzocyclobutene (Benzocyclobutene). , BCB), ink, molding compound or underfill (underf i 11 ). 10121323#单号 A0101 Page 13 of 17 1012042573-0