五、新型說明： 【新型所屬之技術領域】 本創作係關於化學機械研磨機台。 【先前技術】 積體電路的製作係在一基板藉由重覆沉積半導材料層 、導電材料層及絕緣材料層，及利用光刻與蝕刻技術形成 圖樣而完成。在積體電路製作上，重覆堆積的圖樣化材料 層會造成非平面之立體表面（non-planar surface topography)，而此立體表面經常成為隨後的圖樣製程 (patterning processes)的問題，特別是當隨後的圖樣製程中 會產生具臨界尺寸（critical dimensions)之微結構時。因此， 有必要在特定層進行表面平坦化的製程。 化學機械研磨技術（CMP)被開發以磨除多餘材料，以便 於實現基板之全域性平坦化（global planarization)。圖1顯示 一傳統CMP機台1。傳統CMP機台1包含研磨台（polishing table)l 1、研磨塾（polishing pad)12、研磨聚供應裝置13、 具有研磨墊調節盤（conditioning disc)141之研磨墊調節器 (conditioner)14、研磨頭（polishing head)15，以及儲.存去離 子水之調節器清洗盆（conditioner bath)16，其中研磨台11 、研磨墊調節器14和研磨頭15都分別以馬達Μ驅動。 在CMP製程中，晶圓W被裝戴在研磨頭15上，而研磨 頭15可相對研磨墊12移動。研磨漿供應裝置13供給研磨墊 12研磨漿，研磨漿内含化學化合物，其可與材料或材料層 反應，使被研磨之材料層之材料可轉換為氧化物，隨後用 研磨漿且/或研磨墊之研磨料機械磨除氧化物。 為達到所需之磨除率及獲得高度平坦層，CMP製程之 參數與條件必需適當的選定，以及必需考慮諸多因素，例 如：研磨墊12之構造、研磨液之種類、在晶圓貿相對研磨 塾12移動時對晶圓所施加的壓力，以及晶圓w與研磨塾12 之間的相對速度。磨除率明顯地受研磨液的溫度影響，而 影響其溫度之因子依次為：晶圓W和研磨墊12之相對運動 所產生之磨擦量及帶有脫落顆粒之研磨液的飽和程度，特 別是研磨墊12之研磨表面之狀態。 大部份的研磨墊12是用多孔微結構聚合材料（ceUular microstructure polymer material)所形成，該材料具在作業 期間可充填研磨液之孔隙（void)。吸收了由基板表面磨除之 顆粒會使該等孔隙内研磨液揭化（densification)。因此 ，磨除率會持續減少，從而不利於平坦化製程之可靠性， 降低製成半導體元件之良率及其可靠性。 晶圓w平坦化後，研磨墊調節器14之研磨墊調節盤141 被移至研磨墊12上，以調節研磨墊12。研磨墊調節盤141 包括一調節表面（conditioning surface)，其可能包括數種不 同之材料，例如置入耐磨之鑽石材料。一旦磨除率太低時 ，利用研磨墊調節器上之相對較硬的材料剝離且/或再製研 磨墊之已耗乏表面。在其他的例子中，例如：在複雜的cMp 裝置中，在研磨基板時，研磨墊調節器則持續與研磨墊接 觸。 研磨墊12調節結束後，研磨塾調節盤i 4 i被浸泡在調節 M432134 在下文中本創作的實施例係配合所附圖式以闡述細節 〇 圖2顯示本創作一實施例之化學機械研磨系統2之示意 圖。參照圖2所示，化學機械研磨系統2可包含可被馬達π 轉動之一研磨台21、設置於研磨台21上之一研磨墊22、提 供研磨漿（slurry)之一研磨漿供應裝置23、包含研磨墊調節 盤241及可被馬達28轉動之一研磨墊調節器24、將晶圓w按 壓在研磨墊22上和可被馬達29轉動之一研磨頭（p〇Hshing head)25，以及用於清洗研磨墊調節盤241之清洗設備2〇。 研磨塾22可為氨基甲酸乙酯（urethane)研磨墊，研磨墊 22可固定在研磨台21上。研磨墊調節盤241具一研磨面2411 。為維持一定的研磨率，會以研磨墊調節盤241之研磨面 2411將研磨墊22上磨耗（abraded)的部分移除，暴露新的表 面。如此’研磨塾22可持續研磨晶圓。 在一實施例中，研磨墊調節盤241之研磨面2411可固定 有一定尺寸之人工鑽石。人工鑽石可被鎳薄膜（nickel thin film)所固定。 清洗設備20包含一槽體26，槽體26可盛裝去離子水3〇 。槽體26可設計以容納研磨墊調節盤241，使得研磨墊調節 盤241在調節研磨墊22後可浸泡在去離子水30當中。槽體26 可連接一管路31 ’管路31上可設有一水閥32。管路31可用 於供應槽體26去離子水30。槽體26可連接一管路33，管路 33上亦可設有一水閥34。透過管路33，可將槽體26内之去 離子水30排出。 M432134 聚對笨二甲酸乙二酯（PETP)。 在一實施例中，刷毛束352包含複數根刷毛，其中刷毛 之直彳二可”於〇. 12毫米至0.4毫米。在—實施如】中，刷毛之 材質可包含尼龍。 圖5例示本創作一實施例之洗刷裝置％之立體示意圖 。參照圖5所示，基部351更包含兩第三表面3513，其中兩 第三表面3513可與第二表面3512相對。在一實施例中，如 圖4所示，第三表面3513與第二表面3512間之間距小於第— 表面35 11與第二表面3512間之間距。 參照圖5所示，基部351上可形成兩穿孔3514。穿孔3514 可分別位在兩第三表面3513，其係用於將基部351固定。 圖6顯示本創作一實施例之洗刷裝置35之上視圖。參照 圖6所示，洗刷裝置35之刷毛束352可分佈在一條狀區域 3515。條狀區域3515可在延伸方向61上延伸，其延伸程度 大於其寬度，故呈條狀。在一實施例中，條狀區域3515可 在延伸方向61上橫跨第一表面3511。在其他實施例中條 狀區域3515可在不同於延伸方向61之方向上延伸。在一實 施例中，在洗刷裝置3 5安裝後，延伸方向6丨可橫向於研磨 墊調節盤241之旋轉方向。僅在條狀區域3515上植佈刷毛束 352可充分利用每一刷毛束352,避免植佈過多而無法充分 發揮功能之刷乇束，故可降低洗刷裝置35之成本。 基部351可為圓形，但本創作不限於此。在一實施例中 ，區域3515橫向於延伸方向61上之寬度Wd小於基部351之 半徑。 -9- M432134 刷毛束352不限於分佈在一區域内，在一實施例中，刷 毛束352可分佈在整個第一表面3511上。 參照圖6所示，複數刷毛束352可包含一中心刷毛束 3521和複數組刷毛束3522和3523，其中複數組刷毛束3522 和3523分別相距中心刷毛束3521不同距離R1*R2。 在一實施例中，第一表面3511和兩第三表面3513可在 一方向62上排列，其中延伸方向61斜向於方向62。 參照圖2與圖3所示，清洗設備20可更包含複數個夾持 件36 ’複數個夾持件36相應於該些洗刷裝置35設置。夾持 件36用於將相應之洗刷裝置35夾固在槽體26之底面261上 。在一實施例中，每個洗刷裝置35係由一對之夾持件36所 固定’如圖3所示。兩夾持件36分別位於對應之洗刷裝置35 之相對端（例如：兩第三表面3 513所在之部位），並將洗刷裝 置35固在槽體26之底面261上。 在一實施例中，洗刷裝置35在各夾持件36被螺鎖固定 ，如圖4所示。 參照圖4所示，各洗刷裝置35安裝後，其第一表面35 11 可介於兩夾持件36之間。在一實施例中，第一表面3511不 低於對應之兩夾持件36之高度H3。 本創作一實施例之洗刷裝置可運用在化學機械研磨系 統内’清除研磨墊調節盤上之研磨漿或研磨副產物，以避 免晶圓之刮傷。 本創作之技術内容及技術特點已揭示如上，然而熟悉 本項技術之人士仍可能基於本創作之教示及揭示而作種種 -10- M432134 不背離本麟精神之替換及㈣。目此，本創作之保護範 圍應不限於實施例所揭示者，而應包括各種不背離本創作 之替換及修飾，並為以下之申請專利範圍所涵蓋。 【圖式簡單說明】 圖1顯示習知之CMP機台之研磨墊調節器； 圖2顯示本創作一實施例之化學機械研磨系統之示意 園， 圖3顯示本創作一實施例之複數個洗刷裝置之配置示 意圖； 圖4顯示本創作一實施例之洗刷裝置之側視圖； 圖5例示本創作一實施例之洗刷裝置之立體示意圖；及 圖6顯示本創作一實施例之洗刷裝置之上視圖。 【主要元件符號說明】 1 傳統CMP機台 2 化學機械研磨系統 11 研磨台 12 研磨墊 13 研磨漿供應裝置 14 研磨墊調節器 15 研磨頭 16調節器清洗盆 2〇 清洗設備 21 研磨台 22 研磨墊 11 - M432134V. New description: [New technical field] This creation is about chemical mechanical grinding machine. [Prior Art] The fabrication of an integrated circuit is performed by repeatedly depositing a layer of a semiconductor material, a layer of a conductive material and an insulating material on a substrate, and forming a pattern by photolithography and etching. In the fabrication of integrated circuits, the repeated accumulation of patterned material layers can cause non-planar surface topography, which often becomes a problem for subsequent patterning processes, especially when Subsequent patterning processes result in microstructures with critical dimensions. Therefore, it is necessary to perform surface flattening in a specific layer. Chemical mechanical polishing (CMP) has been developed to remove excess material in order to achieve global planarization of the substrate. Figure 1 shows a conventional CMP machine 1. The conventional CMP machine 1 includes a polishing table l1, a polishing pad 12, a polishing poly supply device 13, a polishing pad conditioner having a polishing disc 141, and a grinding A polishing head 15, and a regulator bath 16 for storing deionized water, wherein the polishing table 11, the polishing pad conditioner 14, and the polishing head 15 are each driven by a motor. In the CMP process, the wafer W is mounted on the polishing head 15, and the polishing head 15 is movable relative to the polishing pad 12. The slurry supply device 13 supplies the polishing pad 12 with a chemical slurry which contains a chemical compound which reacts with the material or material layer to convert the material of the material layer to be converted into an oxide, followed by slurry and/or grinding. The abrasive material of the mat mechanically removes oxides. In order to achieve the desired abrasion rate and obtain a highly flat layer, the parameters and conditions of the CMP process must be properly selected, and many factors must be considered, such as: the construction of the polishing pad 12, the type of the polishing liquid, and the relative polishing in the wafer trade.压力12 The pressure applied to the wafer as it moves, and the relative velocity between wafer w and polishing crucible 12. The removal rate is obviously affected by the temperature of the polishing liquid, and the factors affecting the temperature are: the amount of friction generated by the relative movement of the wafer W and the polishing pad 12 and the saturation degree of the polishing liquid with the detached particles, especially The state of the abrasive surface of the polishing pad 12. Most of the polishing pad 12 is formed of a ceUular microstructure polymer material which can be filled with voids of the slurry during operation. Absorption of particles abraded from the surface of the substrate causes densification of the slurry within the pores. Therefore, the rubbing rate is continuously reduced, which is disadvantageous to the reliability of the flattening process, and the yield and reliability of the fabricated semiconductor element are lowered. After the wafer w is planarized, the polishing pad adjustment disk 141 of the polishing pad conditioner 14 is moved onto the polishing pad 12 to adjust the polishing pad 12. The polishing pad adjustment disk 141 includes a conditioning surface that may include several different materials, such as a diamond material that is worn. Once the removal rate is too low, the relatively hard material on the pad conditioner is used to strip and/or rework the worn surface of the pad. In other examples, for example, in a complex cMp device, the polishing pad conditioner continues to contact the polishing pad while the substrate is being polished. After the polishing pad 12 is adjusted, the polishing 塾 adjusting plate i 4 i is immersed in the adjustment M432134. Hereinafter, the embodiment of the present invention is combined with the drawings to illustrate the details. FIG. 2 shows the CMP system 2 of the present embodiment. Schematic diagram. Referring to FIG. 2, the chemical mechanical polishing system 2 may include a polishing table 21 that can be rotated by a motor π, a polishing pad 22 disposed on the polishing table 21, and a slurry supply device 23 that provides a slurry. A polishing pad adjustment disk 241 and a polishing pad adjuster 24 that can be rotated by the motor 28, a wafer w pressed onto the polishing pad 22, and a polishing head (p〇Hshing head) 25 that can be rotated by the motor 29, and The cleaning device 2 for cleaning the polishing pad adjustment disk 241. The abrasive crucible 22 may be a urethane polishing pad, and the polishing pad 22 may be fixed to the polishing table 21. The polishing pad adjustment disk 241 has a polishing surface 2411. To maintain a certain degree of polishing, the abraded portion of the polishing pad 22 is removed by the abrasive surface 2411 of the polishing pad adjustment disk 241 to expose a new surface. Thus the 'grinding crucible 22' can continue to grind the wafer. In one embodiment, the abrasive surface 2411 of the polishing pad adjustment disk 241 can hold an artificial diamond of a certain size. Artificial diamonds can be fixed by a nickel thin film. The cleaning apparatus 20 includes a tank 26 that can contain deionized water. The trough body 26 can be designed to accommodate the polishing pad adjustment disk 241 such that the polishing pad adjustment disk 241 can be immersed in the deionized water 30 after the polishing pad 22 is adjusted. The tank 26 can be connected to a line 31. The line 31 can be provided with a water valve 32. Line 31 can be used to supply tank 26 to deionized water 30. The tank 26 can be connected to a line 33, and a water valve 34 can be provided on the line 33. The deionized water 30 in the tank 26 can be discharged through the line 33. M432134 Poly(p-ethylene edetate) (PETP). In one embodiment, the tuft of bristles 352 comprises a plurality of bristles, wherein the bristles of the bristles may be "12 mm to 0.4 mm." In the implementation, the material of the bristles may comprise nylon. Figure 5 illustrates the creation A perspective view of a scrubbing device of an embodiment. Referring to Figure 5, the base 351 further includes two third surfaces 3513, wherein the two third surfaces 3513 are opposite the second surface 3512. In an embodiment, Figure 4 As shown, the distance between the third surface 3513 and the second surface 3512 is smaller than the distance between the first surface 35 11 and the second surface 3512. Referring to Figure 5, two perforations 3514 can be formed in the base 351. The perforations 3514 can be separately positioned. In the two third surfaces 3513, which are used to fix the base 351. Figure 6 shows a top view of the scrubbing device 35 of an embodiment of the present invention. Referring to Figure 6, the bristle bundles 352 of the scrubbing device 35 can be distributed in a strip shape. A region 3515. The strip region 3515 can extend in the direction of extension 61 and extend more than its width so as to be strip-shaped. In one embodiment, the strip region 3515 can span the first surface 3511 in the direction of extension 61. In other embodiments The region 3515 can extend in a direction different from the direction of extension 61. In an embodiment, after the brush device 35 is installed, the direction of extension 6丨 can be transverse to the direction of rotation of the polishing pad adjustment disk 241. Only in the strip region The 3515 upper planting bristles 352 can make full use of each bristle bundle 352, avoiding too many plantings and failing to fully function the brush bundle, so the cost of the scrubbing device 35 can be reduced. The base 351 can be round, but this creation does not In one embodiment, the width Wd of the region 3515 transverse to the direction of extension 61 is less than the radius of the base 351. -9- M432134 The tufts of bristles 352 are not limited to being distributed within a region, in one embodiment, the bundle of bristles 352 Can be distributed throughout the first surface 3511. Referring to Figure 6, the plurality of tufts 352 can comprise a central tuft of hair 3521 and a plurality of arrays of tufts 3522 and 3523, wherein the plurality of tufts 3522 and 3523 are spaced apart from the center tuft 3521, respectively. Different distances R1*R2. In an embodiment, the first surface 3511 and the two third surfaces 3513 can be aligned in a direction 62, wherein the extending direction 61 is oblique to the direction 62. Referring to Figures 2 and 3, cleaning The apparatus 20 can further include a plurality of clamping members 36. The plurality of clamping members 36 are disposed corresponding to the cleaning devices 35. The clamping members 36 are used to clamp the corresponding cleaning device 35 to the bottom surface 261 of the trough body 26. In one embodiment, each of the scrubbing devices 35 is secured by a pair of gripping members 36 as shown in Figure 3. The two gripping members 36 are respectively located at opposite ends of the corresponding scrubbing device 35 (e.g., two third The surface 3 513 is located, and the scrubbing device 35 is fixed to the bottom surface 261 of the trough 26. In one embodiment, the scrubbing device 35 is threadedly secured to each of the clamp members 36, as shown in FIG. Referring to FIG. 4, after each of the scrubbing devices 35 is installed, the first surface 35 11 thereof may be interposed between the two gripping members 36. In one embodiment, the first surface 3511 is not lower than the height H3 of the corresponding two grip members 36. The scrubbing apparatus of one embodiment of the present invention can be used in a chemical mechanical polishing system to remove the slurry or grinding by-products on the polishing pad adjustment disk to avoid scratching of the wafer. The technical content and technical features of this creation have been disclosed above, but those skilled in the art may still make various kinds based on the teachings and disclosures of this creation. -10- M432134 does not deviate from the replacement of Ben Lin spirit and (4). In view of this, the scope of the present invention is not limited to the embodiments disclosed, but includes various alternatives and modifications that do not depart from the present invention and are covered by the following claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 shows a polishing pad conditioner of a conventional CMP machine; FIG. 2 shows a schematic garden of a chemical mechanical polishing system according to an embodiment of the present invention, and FIG. 3 shows a plurality of cleaning devices according to an embodiment of the present invention. 4 is a side view of a scrubbing device according to an embodiment of the present invention; and FIG. 6 is a top view of a scrubbing device according to an embodiment of the present invention. [Main component symbol description] 1 Conventional CMP machine 2 Chemical mechanical polishing system 11 Grinding table 12 Grinding pad 13 Grinding slurry supply device 14 Grinding pad conditioner 15 Grinding head 16 Regulator cleaning basin 2〇 Cleaning equipment 21 Grinding table 22 Grinding pad 11 - M432134
23 研磨漿供應裝置 24 研磨墊調節器 25 研磨頭 26 槽體 27 馬達 28 馬達 29 馬達 30 去離子水 31 管路 32 水閥 33 管路 34 水閥 35 洗刷裝置 36 夾持件 61 方向 62 方向 141 研磨墊調節盤 241 研磨墊調節盤 261 底面 262 容納空間 351 基部 352 刷毛束 2411 研磨面 3511 第一表面 M43213423 Grinding slurry supply unit 24 Grinding pad conditioner 25 Grinding head 26 Tank 27 Motor 28 Motor 29 Motor 30 Deionized water 31 Line 32 Water valve 33 Line 34 Water valve 35 Washing device 36 Clamping member 61 Direction 62 Direction 141 Abrasive pad adjustment disk 241 polishing pad adjustment disk 261 bottom surface 262 accommodation space 351 base 352 bristle bundle 2411 abrasive surface 3511 first surface M432134
3512 第二表面 3513 第三表面 3514 穿孔 3515 區域 3521 中心刷毛束 3522 ' 3523 刷毛 HI 尺寸 H2 尺寸 H3 高度 Μ 馬達 R1、 R2 距離 W 晶圓 Wd 寬度3512 Second surface 3513 Third surface 3514 Perforation 3515 Area 3521 Center bristle bundle 3522 ' 3523 Bristle HI Dimensions H2 Dimensions H3 Height Μ Motor R1, R2 Distance W Wafer Wd Width
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