TWM429982U - Chemical mechanical polishing pad dresser - Google Patents

Chemical mechanical polishing pad dresser Download PDF

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Publication number
TWM429982U
TWM429982U TW100223651U TW100223651U TWM429982U TW M429982 U TWM429982 U TW M429982U TW 100223651 U TW100223651 U TW 100223651U TW 100223651 U TW100223651 U TW 100223651U TW M429982 U TWM429982 U TW M429982U
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Taiwan
Prior art keywords
polishing
chemical mechanical
region
mechanical polishing
brushing
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TW100223651U
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Chinese (zh)
Inventor
Jui-Lin Chou
Jui-Nan Chien
Chung-Yi Cheng
Ruci-Chi Chen
Wen-Jen Liao
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Kinik Co
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Priority to TW100223651U priority Critical patent/TWM429982U/en
Publication of TWM429982U publication Critical patent/TWM429982U/en

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  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Description

101年.03月09日接正_頁 M429982 五、新型說明: 【新型所屬之技術領域】 [〇〇〇1] 本新型為有關一種化學機械研磨裝置’尤指一種化學機 械研磨修整器》 【先前技術】101.03月09日正正_页M429982 V. New description: [New technology field] [〇〇〇1] This new type is related to a chemical mechanical polishing device, especially a chemical mechanical polishing dresser. Prior art

[〇〇〇2] 於半導體晶圓製造過程之中,係廣泛使用化學機械研磨 (Chemical mechanical polish,簡稱CMP)製程對晶 圓進行研磨,令晶圓表面達平坦化。常見的化學機械研 磨製程為使用一固定在一旋轉台的研磨墊(或拋光墊), 接觸並施力於一承載在一可自旋之載具上的晶圓,於研 磨時,該載具與該旋轉台將進行轉動且提供一研磨漿料 至該研磨塾。一般而言’研磨所造成的碎屑與研磨聚料 將累積在研磨墊中的孔洞,令研磨墊產生耗損且導致其 對於晶圓的研磨效果下降,因此,係需要使用一修整器 (Conditioner)移除研磨墊中殘留的碎屑與研磨漿料。 [〇〇〇3] 習知用於化學機械研磨製程的修聱器如中華民國發明專 利公開第200425993號1ί1 ’揭露·一種研磨塾整理器,主 要係由一底層、一固定層與複數個鑽石顆粒所構成,其 中固定層係配置於底層上’鑽石顆粒係鑲嵌於固定層之 一表面上,其中鑽石顆粒的配置數量係由表面之配置區 域的外側向内側遞減,如此可令該鑽石顆粒的磨耗率一 致,然而’此種研磨墊整理器於底層中央未鑲嵌鑽石顆 粒之形式’會於中央的未鑲鑽區域產生真空吸力或附著 力,使得磨屑.及磨紫·容易積聚在研磨塾整理器的中央而 不易排出,影響研磨墊整理器的效能。 1〇〇223651^_ 第3頁/共19頁 1013088415-0 101年.03月09日接正替«if頁 [QQ04] 為避免上述的情形,在中華民國新型專利公告第M406490 號中,揭露一種適用於化學機械研磨製程之研磨墊修整 器’包含圓形金屬基板'複數鑽石粒子以及結合層。其 中圓形金屬基板包含至少一佈鑽區與一圓形穿孔,且圓 形穿孔的圓心係與圓形金屬基板的圓心重合,結合層係 固定鑽石粒子於圓形金屬基板之佈鑽區上。藉由在圓形 金屬基板的中央設置圓形穿孔,解決磨屑或研磨漿料容 易積聚在研磨墊修整器中央不易排出的問題。 [0005] 然而’上述技術雖然克服了磨屑及研磨漿料容易於研磨[〇〇〇2] In the semiconductor wafer manufacturing process, the chemical mechanical polishing (CMP) process is widely used to polish the crystal to flatten the surface of the wafer. A common CMP process uses a polishing pad (or polishing pad) attached to a rotating table to contact and apply a wafer to a spin-on carrier. The rotating table will rotate and provide a polishing slurry to the polishing crucible. In general, the debris and abrasive particles caused by the grinding will accumulate in the holes in the polishing pad, causing the polishing pad to be worn out and causing the polishing effect on the wafer to be reduced. Therefore, it is necessary to use a Conditioner. Remove debris and abrasive slurry from the polishing pad. [〇〇〇3] A repairing device for a chemical mechanical polishing process, such as the Republic of China Patent Publication No. 200425993, 1 ί1 'Exposure, a polishing 塾 finisher, mainly consisting of a bottom layer, a fixed layer and a plurality of diamonds Between the particles, wherein the fixed layer is disposed on the bottom layer, the diamond particles are embedded on one surface of the fixed layer, wherein the arrangement of the diamond particles is decreased from the outer side to the inner side of the surface of the surface, so that the diamond particles are The wear rate is the same, however, 'the type of polishing pad finisher in the middle of the bottom layer is not inlaid with diamond particles' will generate vacuum suction or adhesion in the central un-drilled area, so that the wear debris and the grinding purple are easy to accumulate in the grinding 塾The center of the finisher is not easily discharged, affecting the performance of the polishing pad finisher. 1〇〇223651^_ Page 3 of 19 pages 1013088415-0 101 years. March 09th to replace the «if page [QQ04] In order to avoid the above situation, in the Republic of China new patent announcement No. M406490, disclosed A polishing pad conditioner suitable for a chemical mechanical polishing process includes a circular metal substrate 'plural diamond particles and a bonding layer. The circular metal substrate comprises at least one diamond-drilled region and a circular perforation, and the center of the circular perforation coincides with the center of the circular metal substrate, and the bonding layer fixes the diamond particles on the diamond-drilled area of the circular metal substrate. By providing a circular perforation in the center of the circular metal substrate, it is solved that the wear debris or the abrasive slurry easily accumulates in the center of the polishing pad conditioner. [0005] However, the above technology overcomes the fact that the abrasive chips and the abrasive slurry are easy to be ground.

墊修整器中央積聚的問題,但該些磨屑及研磨漿料仍會 I 於該研磨墊表面的氣孔或是溝槽中堆積,進而降低研磨 墊的研磨效能,甚至造成晶圓表面的磨損,故有改善之 必要。 【新型内容】 [0006] 本新型的主要目的,在於解決習知的研磨修整器,於修 整研磨墊後’仍會有碎屑殘留於該研磨墊表面的問題。 [0007] 為達上述目的,本新型提供一種化學機械研磨修整器, 用於修整一研磨墊且移除附著於該研磨墊的碎屑,包含 有一承載體、至少一研磨部以及至少一清潔部。該承載 體具有複數個研磨區域及複數個刷拭區域,該研磨區域 及該刷拭區域於一環形方向上呈交錯排序;該研磨部設 置於該研磨區域’用以研磨該研磨墊;該清潔部設置於 該刷拭區域,用以刷除該碎屑。 [0008] 如此一來’本新型藉由該刷拭區域與該研磨區域於該環 形方向上交錯排序,於該研磨部研磨該研磨墊的同時, 10022365严麟删1 帛 4 !/ 共 19 * 1013088415-0 M429982 [0009]The problem of the central accumulation of the pad conditioner, but the abrasive chips and the polishing slurry will still accumulate in the pores or grooves in the surface of the polishing pad, thereby reducing the polishing performance of the polishing pad and even causing wear on the wafer surface. Therefore, there is a need for improvement. [New Content] [0006] The main purpose of the present invention is to solve the problem that the conventional polishing dresser still has debris remaining on the surface of the polishing pad after the polishing pad is trimmed. [0007] In order to achieve the above object, the present invention provides a chemical mechanical polishing conditioner for trimming a polishing pad and removing debris attached to the polishing pad, comprising a carrier, at least one polishing portion, and at least one cleaning portion. . The carrier has a plurality of polishing regions and a plurality of brushing regions, the polishing region and the brushing region are staggered in an annular direction; the polishing portion is disposed in the polishing region to polish the polishing pad; the cleaning The portion is disposed in the brushing area for brushing the debris. [0008] In this way, the present invention uses the brushing region and the polishing region to be staggered in the annular direction, and while the polishing portion grinds the polishing pad, 10022365 Yan Lin deletes 1 帛 4 !/ a total of 19 * 1013088415-0 M429982 [0009]

[0010] 101年.03月09日核正_頁 該清潔部即刷除附著於該研磨墊的該碎屑,不僅減少該 碎屑殘留於該研磨墊表面的機會,提高研磨墊的研磨效 能,甚至經該研磨修整器修整後,該研磨墊不需再經過 額外的表面清潔程序,節省研磨作業的時間,並節省另 行設置一清潔器的成本。 【實施方式】 有關本新型的詳細說明及技術内容,現就配合圖式說明 如下: 請參閱『圖1』所示,為本新型第一實施例的外觀立體示 意圖,本新型為一種化學機械研磨修整器,用於修整一 研磨墊(圖未示)且移除附著於該研磨墊的碎屑,包含有 一承載體10、至少“研磨部20以及至少一清潔部30。該 承載體10呈一圓盤狀,可為金屬、陶瓷或是高分子樹脂 的材料製成,具有複數個研磨區域11、複數個刷拭區域 12及複數個貫孔13,該研磨區域11及讓刷拭區域12於一 環形方向14上呈交錯排序,並沿該承載體10·的一外圈環 繞,該貫孔13設於該刷拭區域12上。該砷磨部纟0設置於 該研磨區域11,包含一第二基底21以及複數個磨料22, 該第二基底21與該承載體10的該研磨區域11結合,可為 金屬、陶瓷、或高分子樹脂製成,該磨料22鑲嵌於該第 二基底21上,用以研磨該研磨墊,其材質可為鑽石、立 方氮化硼、多晶立方氮化硼、碳化矽、氧化鋁或氧化锆 :該清潔部30設置於該刷拭區域12,包含複數個用以刷 除該碎屑的刷毛31,該刷毛31容置於該貫孔13而固定於 該刷拭區域12。在此實施例中,該承載體10較佳為由日 10022365^^^^* A0101 第5頁/共19頁 1013088415-0 M429982 1101年.03月09日按正脊換頁 本工業規格(Japanese Industrial Standards,簡稱 JIS)SUS430之不鏽鋼製成,該第二基底2i較佳為由日本 工業規格(Japanese Industrial Standards,簡稱 JIS)SUS316之不鏽鋼製成,該磨料22則為鑽石,而該刷 毛31為尼龍66之材質製成。 [0011] 為進一步說明該研磨部20及該清潔部3〇,請搭配參閱『 圖2A』及『圖2B』所示,分別為本新型第—實施例的研 磨部剖面示意圖及清潔部剖面示意圖,由『圖2 a』可知 ,該磨料22與該承載體10之間,藉由該第二基底21結合 ,且該磨料22凸出於該第二基底21遠離該承載體10的一 _ 面,而由『圖2B』可知’該刷毛31具有二外露段311 a、 31 lb及一介於該外露段311a、31 lb之間的彎折段312, 在此實施例中,該刷毛31先經由一線圈313綑綁該彎折段 312,再將該線圏313穿過該貫孔13,藉由該線圈313的 拉引下,該刷毛31的該彎折段31 2被拉進該貫孔1 3中,由 於該貫孔13於遠離該刷毛31的一端具有一漸縮的開口 Mi ,因此s玄彎折段312被該開口 131抵止而容置於該貫孔13 中,而該外露段311a ' 31 lb則受該貫孔13的束缚而豎立 ® ,並凸出該貫孔13外。要補充說明的是,該開口 131亦可 與該貫孔13具有相同的一口徑,可於該刷毛31容置於該 貫孔13後,再將該刷毛31固定於該貫孔丨3中,例如以一 銲料連接該線圈313及該開口 1 31之外緣而固定該刷毛31 ,但並不以此為限。 [0012] 請參閲『圖3』所示,為本新型第二實施例的外觀立體示 意圖,在此實施例令,與第一實施例相較之下,其特徵 臓2365产單编號A〇101 第6頁/共19頁 1013088415-0 M429982 I 101年.03月09日修正替换頁 在於該清潔部30還包含一第一基底32,該第一基底32的 材質為金屬、陶瓷或高分子樹脂,較佳為由曰本工業規 格(Japanese Industrial Standards,簡稱 JIS)SUS304之不鏽鋼製成,該第一基底32與該承載體1〇 的該刷拭區域12結合,並具有複數個穿孔321,該刷毛31 為設置於該穿孔321中,其設置原理與第一實施例中該刷 毛31設置於該貫孔1 3中的原理相同,在此則不再贅述, 重點在於藉由該第一基底32,該承載體1〇於製造上不需 預先設置該貫孔13,而該清潔部3〇可由該刷毛μ先與該 • 第一基底32結合後,再由該第一基底32與該承載體1〇結 合而形成。 [0013]請搭配參閱『圖4』所示,為本新型第三實施例研磨區域 與刷拭區域分佈示意圖,在此實施例中,與第一實施例 相較之下,特別的地方在於該承載體1〇具有一中心15以 及一徑方向16 ’該研磨區域η與該刷拭區域12由該中心 15朝該徑方向16逐漸變寬,使得該研磨區域丨丨及該刷拭 區域12分別呈現一扇形。 [00Μ]请搭配參閱F圖5』所示,為本新型第四實施例研磨區域 與刷拭區域分佈示意圖,在此實施例中,該研磨區域11 與該刷拭區域12不僅由該中心15朝該徑方向16逐漸變寬 ’並且進一步的,該研磨區域11與該刷拭區域12以該中 心15呈現一漩渦狀,如此於修整的過程中,有助於將該 碎屑導出該研磨區域11及該刷拭區域丨2。 [0015] 請搭配參閱『 清潔部配置示 顏廳产單編號Α0101 圖6』所示,為本新型第五實施例研磨部與 意圖,在此實施例中,該研磨區域11及該 第7頁/共19頁 1013088415-0 M429982 ι〇ι年〇3月〇9日修正替換·ί 刷拭區域12同樣於該環形方向14上呈交錯排序,特別的 地方在於該研磨區域11包含兩個研磨部20,而該刷拭區 域12包含一個清潔部30,且該研磨部20及該清潔部30皆 位於該環形方向14上排列。再者,要說明的是,在上述 第三實施例至第五實施例中,該刷毛31的設置原理與第 一實施例中該刷毛31設置於該貫孔13中的原理相同,故 不另行描述。 [0016] 綜上所述,由於本新型藉由該刷拭區域與該研磨區域於 該環形方向上交錯排序,於該研磨部研磨該研磨墊的同 時’該清潔部即刷除附著於該研磨墊的該碎屑,不僅減 < 少該碎屑殘留於該研磨墊表面的機會,提高研磨墊的研 磨效能,甚至經該研磨修整器修整後,該研磨墊不需再 經過額外的表面清潔程序,節省研磨作業的時間,再者 ,該研磨區域與該刷拭區域以該中心呈現該旋渦狀的設 計,還有助於將該碎屑導出該研磨區域及該刷拭區域, 提高刷除的效率’因此本新型極具進步性及符合申請新 型專利的要件’爰依法提出申請,祈鈎局早日賜准專利 ,實感德便。 聲 [0017]以上已將本新型做一詳細說明,惟以上所述者,僅爲本 新型的一較佳實施例而已,當不能限定本新型實施的範 圍。即凡依本新型申請範圍所作的均等變化與修飾等, 皆應仍屬本新型的專利涵蓋範圍内。 【圖式簡單說明】 [0018]圖1,為本新型第一實施例的外觀立體示意圖。 _ 圖 2Α, ^022365^單編號 ΑΟίοι 為本新型第一實施例的研磨部剖面示意圖 第8頁/共19頁 〇 1013088415-0 M429982 101年.03月09日修正臂換頁 [0020] 圖2B,為本新型第一實施例的清潔部剖面示意圖。 [0021] 圖3,為本新型第二實施例的外觀立體示意圖。 [0022] 圖4,為本新型第三實施例研磨區域與刷拭區域分佈示意 圖。 [0023] 圖5,為本新型第四實施例研磨區域與刷拭區域分佈示意 圖。 [0024] 圖6,為本新型第五實施例研磨部與清潔部配置示意圖。[0010] 101.03月09日核正_Page The cleaning portion wipes the debris attached to the polishing pad, which not only reduces the chance of the debris remaining on the surface of the polishing pad, but also improves the polishing performance of the polishing pad. Even after the polishing dresser is trimmed, the polishing pad does not need to undergo an additional surface cleaning process, which saves the grinding time and saves the cost of separately installing a cleaner. [Embodiment] The detailed description and technical contents of the present invention will now be described with reference to the following drawings: Please refer to FIG. 1 for a perspective view of the first embodiment of the present invention. The present invention is a chemical mechanical polishing. a dresser for trimming a polishing pad (not shown) and removing debris attached to the polishing pad, comprising a carrier 10, at least "grinding portion 20 and at least one cleaning portion 30. The carrier 10 is in a The disc shape may be made of a metal, ceramic or polymer resin material, and has a plurality of polishing regions 11 , a plurality of brushing regions 12 and a plurality of through holes 13 , and the polishing region 11 and the brushing region 12 are An annular direction 14 is staggered and surrounded by an outer ring of the carrier 10·. The through hole 13 is disposed on the brushing area 12. The arsenic grinding unit 纟0 is disposed on the polishing area 11 and includes a a second substrate 21 and a plurality of abrasives 22, the second substrate 21 is combined with the polishing region 11 of the carrier 10, and may be made of metal, ceramic, or polymer resin. The abrasive 22 is embedded in the second substrate 21 Upper, used to grind the research The polishing pad may be made of diamond, cubic boron nitride, polycrystalline cubic boron nitride, tantalum carbide, aluminum oxide or zirconia: the cleaning portion 30 is disposed in the brushing region 12, and includes a plurality of brushes for removing the The bristles 31 of the bristles 31 are received in the through holes 13 and fixed to the brushing area 12. In this embodiment, the carrier 10 is preferably made by the Japanese 10022365^^^^* A0101 page 5 / 19 pages 1013088415-0 M429982 1101. March 09 is made of stainless steel of SUS430 according to Japanese Industrial Standards (JIS). The second substrate 2i is preferably made by Japanese Industrial Standards (Japanese). Industrial Standards (JIS) is made of SUS316 stainless steel, the abrasive 22 is made of diamond, and the bristles 31 are made of nylon 66. [0011] To further illustrate the polishing unit 20 and the cleaning unit 3, please match Referring to FIG. 2A and FIG. 2B, respectively, a schematic cross-sectional view of a polishing portion and a schematic cross-sectional view of a cleaning portion according to the first embodiment of the present invention are shown in FIG. 2a, between the abrasive 22 and the carrier 10. By the second substrate 21 being bonded, and the grinding 22 is protruded from the second substrate 21 away from the surface of the carrier 10, and as shown in FIG. 2B, the bristles 31 have two exposed segments 311a, 31 lb and one between the exposed segments 311a, 31b. In the embodiment, the bristles 31 first bind the bending section 312 via a coil 313, and then pass the winding 313 through the through hole 13 by pulling the coil 313 The bending section 31 2 of the bristles 31 is pulled into the through hole 13 3 . Since the through hole 13 has a tapered opening Mi at an end away from the bristles 31 , the s-fold bending section 312 is The opening 131 is resisted and received in the through hole 13, and the exposed portion 311a '31 lb is erected by the through hole 13 and protrudes out of the through hole 13. It should be noted that the opening 131 may have the same diameter as the through hole 13 . After the bristles 31 are received in the through hole 13 , the bristles 31 are fixed in the through hole 3 . For example, the bristles 31 are fixed by connecting the coil 313 and the outer edge of the opening 1 31 with a solder, but are not limited thereto. [0012] Please refer to FIG. 3, which is a perspective view of the second embodiment of the present invention. In this embodiment, compared with the first embodiment, the feature 臓 2365 is produced by the number A. 〇101 Page 6 of 19 1013088415-0 M429982 I 101. The revised replacement page of March 09 is that the cleaning unit 30 further includes a first substrate 32 made of metal, ceramic or high. The molecular resin is preferably made of stainless steel of Japanese Industrial Standards (JIS) SUS304, and the first substrate 32 is combined with the brushing region 12 of the carrier 1〇 and has a plurality of perforations 321 The bristles 31 are disposed in the through holes 321 , and the principle of the bristles 31 is the same as that of the first embodiment in which the bristles 31 are disposed in the through holes 13 , and details are not described herein again. The substrate 32 is not required to be provided with the through hole 13 in advance, and the cleaning portion 3 can be combined with the first substrate 32 by the bristles μ, and then the first substrate 32 and the first substrate 32 The carrier 1 is formed by bonding. [0013] Please refer to FIG. 4 for a distribution diagram of the polishing area and the brushing area of the third embodiment of the present invention. In this embodiment, in contrast to the first embodiment, the special point is that The carrier body 1 has a center 15 and a radial direction 16 ′. The polishing region η and the brushing region 12 are gradually widened from the center 15 toward the radial direction 16 such that the polishing region 丨丨 and the brushing region 12 respectively Present a fan shape. [00Μ] Please refer to FIG. 5, which is a schematic view showing the distribution of the polishing area and the wiping area according to the fourth embodiment of the present invention. In this embodiment, the polishing area 11 and the wiping area 12 are not only the center 15 Gradually widening toward the radial direction 16 and further, the abrasive region 11 and the wiping region 12 assume a swirl shape with the center 15, so that during the trimming process, the debris is facilitated to be led out to the grinding region. 11 and the brushing area 丨2. [0015] Please refer to the "cleaning department configuration show room number Α0101 FIG. 6", which is the grinding part and the intention of the fifth embodiment of the present invention. In this embodiment, the grinding area 11 and the seventh page / 19 pages 1013088415-0 M429982 ι〇ι〇 〇 March 〇 9th correction replacement ί The wiping area 12 is also staggered in the annular direction 14, in particular, the grinding area 11 comprises two grinding parts 20, the brushing area 12 includes a cleaning portion 30, and the polishing portion 20 and the cleaning portion 30 are both arranged in the annular direction 14. It should be noted that, in the third embodiment to the fifth embodiment, the principle of the bristles 31 is the same as that of the bristles 31 in the through hole 13 in the first embodiment, so there is no need to description. [0016] In summary, since the brushing area and the grinding area are staggered in the annular direction, the polishing part is polished while the cleaning part is attached to the grinding. The debris of the pad not only reduces the chance that the debris remains on the surface of the polishing pad, but also improves the polishing performance of the polishing pad. Even after the polishing dresser is trimmed, the polishing pad does not need to be subjected to additional surface cleaning. a program that saves time for the grinding operation. Further, the polishing area and the brushing area exhibit the spiral design at the center, and also helps to guide the debris to the polishing area and the brushing area, thereby improving brushing. The efficiency of the new type is therefore very progressive and meets the requirements for applying for a new type of patent. 'Apply in accordance with the law, the Prayer Bureau will grant the patent as soon as possible. [0017] The present invention has been described in detail above, but the foregoing is only a preferred embodiment of the present invention, and the scope of the present invention is not limited. That is, the equal changes and modifications made in accordance with the scope of this new application shall remain within the scope of the patent of this new type. BRIEF DESCRIPTION OF THE DRAWINGS [0018] FIG. 1 is a perspective view showing the appearance of a first embodiment of the present invention. _ Figure 2Α, ^022365^单单ΑΟίοι is a cross-sectional view of the polishing section of the first embodiment of the present invention. Page 8 of 19 〇1013088415-0 M429982 101. March 09 Correction arm PAGE [0020] FIG. 2B, A schematic cross-sectional view of the cleaning portion of the first embodiment of the present invention. 3 is a perspective view showing the appearance of a second embodiment of the present invention. 4 is a schematic view showing the distribution of the polishing area and the wiping area in the third embodiment of the present invention. [0023] FIG. 5 is a schematic view showing the distribution of the polishing area and the wiping area according to the fourth embodiment of the present invention. 6 is a schematic view showing the arrangement of a polishing portion and a cleaning portion according to a fifth embodiment of the present invention.

【主要元件符號說明】 [0025] 10 :承載體 [0026] 11 :研磨區域 [0027] 12 :刷拭區域 [0028] 13 :貫孔 [0029] 1 31 :開口 [0030] 14 :環形方向[Description of Main Component Symbols] [0025] 10: Carrier [0026] 11: Grinding Area [0027] 12: Brushing Area [0028] 13: Through Hole [0029] 1 31: Opening [0030] 14: Ring Direction

[0031] 15 :中心 [0032] 16 :徑方向 [0033] 20 :研磨部 [0034] 21 :第二基底 [0035] 22 :磨料 [0036] 30 :清潔部 10022365^·^'^^ A〇101 第9頁/共19頁 1013088415-0 M429982 [0037] 31 : 刷毛 [0038] 311a、311b :外露段 [0039] 312 :彎折段 [0040] 313 :線圈 [0041] 32 : 第一基底 [0042] 321 :穿孔 365产單编號A〇101 第10頁/共19頁 101年.03月09日核正替换頁15: center [0032] 16: radial direction [0033] 20: grinding portion [0034] 21: second substrate [0035] 22: abrasive [0036] 30: cleaning portion 10022365^·^'^^ A〇 101 Page 9 of 19 1013088415-0 M429982 [0037] 31 : bristles [0038] 311a, 311b: exposed section [0039] 312: bending section [0040] 313: coil [0041] 32 : first substrate [ 0042] 321 : Perforation 365 Production Order No. A〇101 Page 10 of 19 Page 101. March 09 Nuclear Replacement Page

1013088415-01013088415-0

Claims (1)

101年.03月09日按正替換頁 M429982 六、申請專利範圍: 1 . 一種化學機械研磨修整器,用於修整一研磨墊且移除附著 於該研磨墊的碎屑,包含有: 一承載體,具有複數個研磨區域及複數個刷拭區域,該研 磨區域及該刷栻區域於一環形方向上呈交錯排序; 至少一研磨該研磨墊的研磨部,設置於該研磨區域;以及 至少一刷除該碎屑的清潔部,設置於該刷拭區域。 2 .如申請專利範圍第1項所述的化學機械研磨修整器,其中 該研磨區域及該刷拭區域自該承載體的一中心朝一徑方向 # 漸寬。 3 .如申請專利範圍第2項所述的化學機械研磨修整器,其中 該研磨區域及該刷拭區域分別呈一扇形。 4 .如申請專利範圍第2項所述的化學機械研磨修整器,其中 該研磨區域及該刷拭區域分別呈一漩渦狀。 5 .如申請專利範圍第1項所述的化學機械研磨修整器,其中 該清潔部包括複數個固定於該刷拭區域的刷毛。 6 .如申請專利範圍第5項所述的化學機械研磨修整器,其中 ® 該承載體具有複數設於該刷拭區域而供該刷毛容置的貫孔 ,且該刷毛各具有兩凸出該貫孔的外露段及一設於該外露 段之間並固定於該貫孔内的彎折段。 7. 如申請專利範圍第1項所述的化學機械研磨修整器,其中 該清潔部包括一與該承載體的該刷拭區域結合的第一基底 及複數個設於該第一基底的刷毛。 8. 如申請專利範圍第7項所述的化學機械研磨修整器,其中 該第一基底係選自由金屬、陶瓷及高分子樹脂所組成之群101. March 09, according to the replacement page M429982 VI. Patent scope: 1. A chemical mechanical polishing dresser for trimming a polishing pad and removing debris attached to the polishing pad, including: The body has a plurality of polishing regions and a plurality of brushing regions, the polishing region and the brush region are staggered in an annular direction; at least one polishing portion for polishing the polishing pad is disposed in the polishing region; and at least one A cleaning portion that removes the debris is disposed in the brushing area. 2. The chemical mechanical polishing conditioner according to claim 1, wherein the polishing region and the wiping region are gradually widened from a center of the carrier toward a radial direction #. 3. The chemical mechanical polishing conditioner according to claim 2, wherein the polishing region and the brushing region are each in a fan shape. 4. The chemical mechanical polishing conditioner according to claim 2, wherein the polishing region and the wiping region each have a spiral shape. 5. The chemical mechanical polishing conditioner of claim 1, wherein the cleaning portion comprises a plurality of bristles fixed to the brushing region. 6. The chemical mechanical polishing conditioner of claim 5, wherein the carrier has a plurality of through holes provided in the brushing area for receiving the bristles, and the bristles each have two protrusions. An exposed section of the through hole and a bent section disposed between the exposed section and fixed in the through hole. 7. The chemical mechanical polishing conditioner of claim 1, wherein the cleaning portion comprises a first substrate coupled to the brushing region of the carrier and a plurality of bristles disposed on the first substrate. 8. The chemical mechanical polishing conditioner of claim 7, wherein the first substrate is selected from the group consisting of metal, ceramic, and polymer resin. 10022365^^^11 A0101 第11頁/共19頁 1013088415-0 M429982 10Ϊ年.03月09日梭正替換頁 9 .如申請專利範圍第7項所述的化學機械研磨修整器,其中 該第一基底具有複數穿孔,該刷毛各具有兩凸出該穿孔的 外露段及一設於該外露段之間並固定於該穿孔内的彎折段 10 .如申請專利範圍第1項所述的化學機械研磨修整器,其中 該研磨部包括一與該承載體的該研磨區域結合的第二基底 及複數個設於該第二基底的磨料。 11 .如申請專利範圍第10項所述的化學機械研磨修整器,其中10022365^^^11 A0101 Page 11 of 19 1013088415-0 M429982 10Ϊ年.03月09日 Shuttle replacement page 9. The chemical mechanical polishing conditioner according to claim 7, wherein the first The base has a plurality of perforations, each of the bristles having two exposed sections protruding from the perforations and a bent section 10 disposed between the exposed sections and fixed in the perforations. The chemical machine according to claim 1 An abrasive dresser, wherein the polishing portion includes a second substrate coupled to the polishing region of the carrier and a plurality of abrasives disposed on the second substrate. 11. The chemical mechanical polishing dresser of claim 10, wherein 該第二基底係選自由金屬、陶瓷及高分子樹脂所組成之群 組。 12 .如申請專利範圍第10項所述的化學機械研磨修整器,其中 該磨料選自由鑽石、立方氮化硼、多晶立方氮化硼、碳化 矽、氧化鋁及氧化锆所組成之群組。 13 .如申請專利範圍第1項所述的化學機械研磨修整器,其中 該承載體係選自由金屬、陶瓷及高分子樹脂所組成之群組 100223651^^ AQ1Q1 第12頁/共19頁 1013088415-0The second substrate is selected from the group consisting of metals, ceramics, and polymeric resins. 12. The chemical mechanical polishing conditioner of claim 10, wherein the abrasive is selected from the group consisting of diamond, cubic boron nitride, polycrystalline cubic boron nitride, tantalum carbide, aluminum oxide, and zirconium oxide. . 13. The chemical mechanical polishing conditioner according to claim 1, wherein the carrier system is selected from the group consisting of metal, ceramic and polymer resin. 100223651^^ AQ1Q1 Page 12 of 19 1013088415-0
TW100223651U 2011-12-15 2011-12-15 Chemical mechanical polishing pad dresser TWM429982U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109483403A (en) * 2018-12-25 2019-03-19 上海致领半导体科技发展有限公司 A kind of polishing pad brush with grooming function
CN112588625A (en) * 2020-09-17 2021-04-02 好慷(厦门)信息技术有限公司 Cleaning device and using method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109483403A (en) * 2018-12-25 2019-03-19 上海致领半导体科技发展有限公司 A kind of polishing pad brush with grooming function
CN112588625A (en) * 2020-09-17 2021-04-02 好慷(厦门)信息技术有限公司 Cleaning device and using method thereof

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