M415315 五、新型說明： 【新型所屬之技術領域】 本創作是有關於一種晝素結構以及晝素陣列基板，且 特別是有關於一種應用於顯示面板中時，可改善黑紋現象 的晝素結構以及畫素陣列基板。 【先前技術】 目前市場對於薄膜電晶體液晶顯示面板(TFT liquid crystal display panel)皆朝向高對比(contrast ratio)、無灰階 反轉(gray scale inversion)、高亮度(brightness)、高色飽和 度（color saturation)、快速反應（response)以及廣視角 (viewing angle)等方向發展。目前常見的廣視角技術包括： 扭轉向列型液晶(TN)加上廣視角膜(wide viewing film)、共 平面切換式(In-Plane Switching，IPS)液晶顯示面板、邊際 場切換式(Fringe Field Switching，FFS)液晶顯示面板與多 域垂直配向式(Multi-domain Vertical Alignment，MVA)液 晶顯示面板。 以邊際場切換式(Fringe Field Switching，FFS)液晶顯 示面板為例，其具有廣視角（wide viewing angle)以及低色 偏(color shift)等優點特性。然而，在習知之邊際場切換式 (Fringe Field Switching，FFS)液晶顯示面板中，由於晝素 電極的不同區域具有不同的電力線分佈，使得對應於晝素 電極邊緣及中心的液晶分子的傾倒方向不一致，導致習知 之邊際場切換式(Fringe Field Switching，FFS)液晶顯示面 4 M415315 板在顯示時產生非預期的黑紋(disclinati〇n)，進一步使得液 晶顯示面板在顯示暗態畫面時發生漏光現象或是在顯示亮 態畫面時輝度低下。若為了遮蔽漏光或黑紋現象的情形而 配置對應於配向凸塊或配向狹縫的遮光層，又會使顯示開 口率受到限制。因此，如何提高邊際場切換式(FringeFiekJ Switching，FFS)液晶顯示面板之顯示亮度以及對比度，使 其具有更佳的顯示品質，實為研發者所欲達的目標之一。M415315 V. New description: [New technical field] This creation is about a halogen structure and a halogen matrix substrate, and especially relates to a halogen structure which can improve the black streak when applied to a display panel. And a pixel array substrate. [Prior Art] Currently, the TFT liquid crystal display panel is oriented toward a high contrast ratio, a gray scale inversion, a high brightness, and a high color saturation. (color saturation), rapid response (response) and wide viewing angle (viewing angle) and other directions. The current wide viewing angle technologies include: Twisted Nematic Liquid Crystal (TN) plus wide viewing film, In-Plane Switching (IPS) liquid crystal display panel, and marginal field switching (Fringe Field) Switching, FFS) liquid crystal display panel and Multi-domain Vertical Alignment (MVA) liquid crystal display panel. Taking the Fringe Field Switching (FFS) liquid crystal display panel as an example, it has the advantages of wide viewing angle and low color shift. However, in the conventional Fringe Field Switching (FFS) liquid crystal display panel, since the different regions of the halogen electrode have different power line distributions, the tilting directions of the liquid crystal molecules corresponding to the edge and the center of the pixel electrode are inconsistent. As a result, the Fringe Field Switching (FFS) liquid crystal display surface 4 M415315 board produces an unexpected black pattern (disclinati〇n), which further causes the liquid crystal display panel to leak light when displaying a dark state picture. Or the brightness is low when the bright picture is displayed. If the light shielding layer corresponding to the alignment bump or the alignment slit is disposed in order to shield the light leakage or the black streak phenomenon, the display opening ratio is limited. Therefore, how to improve the display brightness and contrast of the FringeFiekJ Switching (FFS) liquid crystal display panel to make it have better display quality is one of the goals that the developer desires.
【新型内容】 β有鑑於此，本創作提供一種晝素結構，其可以提高邊 際场切換式(Fringe Field Switching，FFS)顯示面板之顯示 本創作提供-種畫素陣列基板，利用其所構成之邊際 =切換式(Fringe Field Switehing，)顯㈣板具有較高 的顯示亮度及顯示品質。 本創作提出—種晝素結構，其包括—基板、一掃描 二共通線以及-貢料線、—共同電極、—主動元件、 配極以& ;1電圖案。掃描線、共通線以及資料線 於上:，線與資料線相互交錯。共同電極配置 於共通線上’並與共通線電性連接。_元件 上，並與掃描線及資料線電性連接。書配 元件上，並與主動元件電性連接，書;=置 料線延伸’分支於鄰近資料線處彼此斷開。=== 於晝素電社’介電_賤彼靖_分支。 本創作另提供-種晝素陣列基板。此晝素陣列基板包 柄二基板、多條掃描線、多條共通線、多條資料線以及多 罢ιί單元。這些触線、這祕通線以及這些資料線配 斑=板t ’且掃插線崎料線相互交錯。晝素單元分別 之知描線以及資料線電性連接，其中每—晝素單元 = 主動讀、—共同電極、-晝素電極以及-介電圖 :貪伽配置於基板上’並與對應之掃描線及對應之 電性連接。晝素電配置於共通線上，並與共通線 性連接，主素m於主動元件上，並與主動元件電 支彼士八二、电和，、有—條狀電極以及多條分支，其中分 覆蓋彼此斷開的分支r置於晝素電極上，介電圖案 在本創作之一實施例中， 以及二支幹，其中 共通線包括-主幹 上平行於資料線，且二=八=仃於知描線，二支幹實質 體而言，八一 为別位於共同電極的兩側。1 叩。刀支例如延伸至支幹其中之具 於支幹與介電gjL並且， 7 ’使分支位 並暴露出分。當然，介電圖案亦可以是島狀圖;， 在本創作之一實施例t,上述之 料線平行，並覆蓋詞線與部分共通線電_實質上與資 在本創作之-實施例中，上述之各畫素電極的分支包 Μ支幹13〇b在共用電極210的兩相對側分別自主幹 9 同·側延伸，其中共用電極21〇的兩相對侧例如圖 中所標示的第-側S1與第二側S2。 基於導電性以及製程簡化的考量，掃描線⑽與共通 130^材料可以使用相同的金屬材料。然，本創作不限 於此.=田線120與共通線13〇也可以使用其他導電材料。 ° ί、金屬材料的氮化物、金屬材料的氧化物、金 料=氮氧化物、或是金屬材料與其它導電材料的堆疊 ，’本實施例之掃描線u〇與共通線削材質例如為姻銳 合金(MoNb)，其厚度例如為3〇〇〇埃。 /、接著，凊參照圖2與圖3B，其中圖3]8為圖2中單獨 形，共同電極210的圖案，在實際的製程中，是將此圖案 堆豐於圖3A之掃描、線12〇以及共通線13〇關案上。共 同电極210位於共通線13〇上，並與共通線電性連接， 在本實施财’共同電極2H)是直接覆蓋在共通線130的 P刀表面上以與其電性連接，在其他實施例巾，共同電極 210,共通線13G之間亦可設置另—絕緣層，且共同電極 210藉由此絕緣層的-開σ而與下方的共通線13()電性連 接。共同电極210用以接收來自共通線13〇所傳遞的共通 電壓Vcom。在本貫施例中，共同電極21〇例如是透明導 電層，其包括金屬氧化物，例如是銦錫氧化物、銦鋅氧化 物、鋁錫氧化物、鋁鋅氧化物、銦鍺鋅氧化物、或其它合 適的氧化物、或妓上述至少二者之堆疊層，在本實施例 中，共同電極210例如為厚度47〇埃的錮錫氧化物層。 料 15315 然後，於基板110的共同電極21〇上形成閘絕 、”曰:）’以覆蓋掃描線120、共通線13〇以及共同電極&〇， 使得共同電極21〇位於共通線與閘絕緣層（未纟會示 間。絕緣層（未繪示)的材料可為無機絕緣材料(例二。：氧 ，矽、氮化矽、氮氧化矽、或上述至少二種材料的堆聂戶 有機絕緣材料或上述之組合。在本實施射，閘絕^層曰 '.·曰示)例如為厚度3800埃的氮化石夕層。 ,、之後，請參照圖2與圖3C，其中圖3C為圖2中單獨 形成通道層220、源極230S、汲極230D以及資料線14〇 的圖案，在實際的製程中，是將此圖案堆疊於前述之圖3a 與圖3B的圖案上。在本實施例中，以前述之掃描線i2〇 的部份區域作為閘極120G，並於閘極12〇G上形成通道層 2~20。並且，於通道層22〇及閘絕緣層（未繪示）上同時形成 資料線140與汲極230D，其中資料線14〇與掃描線12〇 彼此交錯設置。換言之，資料線140的延伸方向與掃描線 120的延伸方向不平行，較佳的是，資料線14〇的延伸方 向與掃描線120的延伸方向垂直。更詳細來說，本實施例 之通道層220例如為1500埃之非晶矽層以及3〇〇埃之N 型摻雜非晶矽層所構成的疊層，而本實施例之資料線14〇 與汲極230D例如為厚度3500埃之鉻層。此外，在本實施 例中’以資料線140中與通道層220重疊之部分區域作為 源極230S ’使源極230S與汲極230D分別位於通道層220 的兩側’於此便完成了主動元件T之製作。如圖2所示， 主動元件T是由閘極120G、閘絕緣層（未繪示）、通道層 M415315 收來自對應資料線140所傳遞之對應資料電壓，藉此，在 * 各晝素結構200中’晝素電極250會與共同電極21〇間形 - 成一電場。當此畫素結構2〇〇應用於顯示面板時，此電場 會驅動上方的液晶分子使其作不同程度的偏轉以產生顯示 功能，而此顯示面板即為邊際場切換式（Fringe Field Switching ’ FFS)液晶顯示面板。值得一提的是，這樣的晝 素電極250設計可以將上方的液晶層劃分出多個配向領 域，進而使得利用此畫素結構200的顯示面板具有改善顯 不晝面之色偏現象，並且具有增廣視角的功能。 請參照圖2與圖3E，其中圖3E為圖2中單獨形成介 電圖案260的示意圖’在實際的製程中，是將此圖案堆疊 於前述之圖3A至圖3D的圖案上。特別的是，如圖2與圖 3E所示，本創作之畫素結構更於晝素電極25〇的上方設置 一介電圖案260 ’以便完成晝素結構2〇〇之製作。詳言之， 介電圖案260配置於第二側S2之畫素電極25〇上並覆蓋 這些彼此斷開的分支254。詳言之，介電圖案260實質上 # 與資料線140平行，並覆蓋資料線140與共通線130，在 本貝加例中’彼此斷開的分支254位於支幹13〇b與介電圖 案260之間。介電圖案260的設置可以進一步增進晝素電 極250之分支254對上方液晶分子的控制力。 詳言之，如前述，晝素電極250的分支254在第二侧 S2呈現彼此斷開的狀態，這樣的晝素設計雖然有助於改善 色偏以及增廣視角，但這些分支254的設計容易減弱晝素 電極250對上方液晶分子的控制力，使得該處上方的液晶 13 M415315 分子容易受到資料電壓的些微變化而產生劇烈的波動，進 而導致在顯示晝面上缝黑紋缺陷，或是產生漏光現象。 因此，本創作藉由在晝素電極25〇之彼此斷開的分支254 上=置了覆蓋這些分支254的介電圖案260，藉此可以降 低二支254上方液晶分子的自由度，延遲該處液晶分子對 =壓變動的反應，藉以穩定該處容易受到電場影響的液晶 二子，進而有效地抑制黑紋現象以及暗態漏光等缺陷的產 生。 提的是’設計者可基於穿透率、介電圖案的材 Ϊ或後Ϊ製程的相容性等來調整介電圖案260的厚度與幅 么。具體而言’以氮化石夕SlNx作為介電圖案26〇的材質 其=，在本實施例中，介電圖案施的厚度可以6_埃為 =以針對不同的產品需求來微調厚度與幅寬的關係。舉 介雷ί安當介電圖案260的厚度實質上為_〇埃時，此時， 的內Λ 260靠近共同電極210的内侧實質上與支幹 質^切齊，而介電_26G遠離共同電極2 Γ^線140的外側切齊。換言之，介電圖二 實^二貫質上如圖中的寬度W。當介電圖案260的厚度 減，、=於6_埃時，介電圖案的幅宽可進一步縮 埃時當介^圖案遍的厚度實質上小於嶋 定介電圖案260的幅寬’因此本創作並不限 冤圖案260的厚度與幅寬。 面板二進—步繪示當晝素結構200應用於顯示 夺…、矩陣的设置位置與圖案。如圖3F所示，當利 以成顯示面板時’黑矩陣27。會對應地 生漏光 動元件7上方，_錢示面板產 設置在相對於畫素陣列基^ L It不限定黑_的形成位置，為清楚基板上各構件 ' 士關係，圖2中省略了黑矩陣的繪示。 FI安—提的是，本實施例之介電圖案遍例如是條狀 ==;ι电圖案260自資料線140延伸至主幹13〇a上方並 =盘主幹13〇a的一部分，換言之，在本實施例之晝素陣列 土板中，同一行的晝素單元中使用同一條介電圖案26〇， 且該=電圖案260是連續地覆蓋在一整條資料線14〇上方。 當然’畫素結構200中的介電圖案260亦可以是島狀 圖案:如圖4所示，圖4繪示本創作之另一種晝素結構的 上視示意圖。請參照圖4，本實施例之晝素結構3〇〇與圖2 之晝素結構200類似，惟，本實施例之介電圖案26〇為島 狀圖案，並暴露出其所對應之共通線13〇的部分主幹 130a。換言之，在本實施例之晝素陣列基板中，每一晝素 單元中僅對應地設置一個介電圖案260，使得晝素陣列基 板100上的多個島狀圖案彼此分離，並呈陣列排列。由於 晝素陣列基板100上的介電圖案260彼此分離，當後續製 作液晶層的製程中採用液晶滴下(One Drop Fill(ODF))技術 時，可以減少滴下不良率，因此與後續的液晶滴下製程具 有較佳的相容性。 此外，圖5進一步繪示本創作之另一種晝素結構的上 15 M415315 視示意圖。請參照圖5，本實施例之畫素結構4〇〇與圖2 ^晝素結構200類似，惟，本實施例之晝素電極45〇中的 =支454彼此平行’進一步而言’本實施例之晝素電極 中的分支454在日後用以顯示的區域中彼此完全平行，而 =有分為彼此呈線對稱的第-分支以及第二分支，有別於 圖2與圖3所繪示之晝素結構200、3〇〇。 益對財創狀晝素結構巾介電㈣設置的有 面板後顯示亮度的效果’以下將以繪示於 構請為例，說明利用本創作之晝素結[New content] β In view of this, the present invention provides a halogen structure, which can improve the display of the Fringe Field Switching (FFS) display panel. The present invention provides a pixel array substrate, which is constructed by using the same. Fringe Field Switehing (display) (4) board has high display brightness and display quality. The present invention proposes a halogen structure comprising a substrate, a scanning common line and a tributary line, a common electrode, an active element, a matching electrode and an electric pattern. The scan line, the common line, and the data line are on the top: the line and the data line are interlaced. The common electrode is disposed on the common line' and electrically connected to the common line. On the _ component, and electrically connected to the scan line and data line. The book is equipped with components and electrically connected to the active components, and the book; = the extension of the stock line branches are disconnected from each other at adjacent data lines. === 于昼素电社' dielectric _ 贱 靖 _ _ branch. This creation also provides a halogen matrix substrate. The pixel array substrate has two substrates, a plurality of scanning lines, a plurality of common lines, a plurality of data lines, and a plurality of cells. These lines, the secret line, and the data line matching spot = plate t' and the sweeping line are interlaced. The pixel unit is separately connected to the data line and the data line, wherein each of the elementary units = active read, - common electrode, - halogen element and - dielectric map: the gamma is disposed on the substrate 'and the corresponding scan Line and corresponding electrical connection. The halogen element is arranged on the common line and is connected in common with the common element, and the main element is on the active element, and the active element is electrically connected to the october, the electric sum, the strip electrode and the plurality of branches, wherein the sub-cover The branches r that are disconnected from each other are placed on the halogen electrodes, and the dielectric pattern is in one embodiment of the present invention, and two branches, wherein the common line includes - the trunk is parallel to the data line, and the second = eight = 仃In the case of two lines of solid body, Bayi is located on both sides of the common electrode. 1 叩. The knives extend, for example, to the stems and the dielectrics gjL and 7' to make the branches and expose the points. Of course, the dielectric pattern can also be an island map; in one embodiment of the present creation, the above-mentioned material lines are parallel, and cover the word line and part of the common line electricity - substantially in the present embodiment - in the embodiment The branching branches 13〇b of the respective pixel electrodes are respectively extended on the opposite sides of the common electrode 210, and the opposite sides of the common electrode 21〇 are, for example, the first in the figure. Side S1 and second side S2. Based on the conductivity and process simplification considerations, the scan line (10) and the common 130 material can use the same metal material. However, this creation is not limited to this. = Field line 120 and common line 13 can also use other conductive materials. ° ί, a nitride of a metal material, an oxide of a metal material, a gold material = an oxynitride, or a stack of a metal material and other conductive materials, 'the scanning line u 〇 and the common wire cutting material of this embodiment are, for example, marriage A sharp alloy (MoNb) having a thickness of, for example, 3 angstroms. Referring to FIG. 2 and FIG. 3B, FIG. 3 is a pattern of the common electrode 210 in FIG. 2, and in the actual process, the pattern is piled up in the scan of FIG. 3A, line 12 〇 and the common line 13 on the case. The common electrode 210 is located on the common line 13 , and is electrically connected to the common line. In the present embodiment, the common electrode 2H is directly covered on the surface of the P-pole of the common line 130 to be electrically connected thereto. In other embodiments, The towel, the common electrode 210, and the common line 13G may be provided with another insulating layer, and the common electrode 210 is electrically connected to the lower common line 13 () by the opening σ of the insulating layer. The common electrode 210 is for receiving the common voltage Vcom transmitted from the common line 13A. In the present embodiment, the common electrode 21 is, for example, a transparent conductive layer including a metal oxide such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium antimony zinc oxide. Or a suitable oxide, or a stacked layer of at least two of the above, in the present embodiment, the common electrode 210 is, for example, a tantalum tin oxide layer having a thickness of 47 Å. Then, a gate electrode 1515 is formed on the common electrode 21 of the substrate 110 to cover the scan line 120, the common line 13A, and the common electrode & 〇, so that the common electrode 21〇 is located at the common line and the gate is insulated. The layer (the material of the insulating layer (not shown) may be an inorganic insulating material (Example 2: oxygen, antimony, tantalum nitride, niobium oxynitride, or at least two of the above materials) Insulating material or a combination of the above. In the present embodiment, the gate layer 曰 '.. ) ) ) ) 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 In FIG. 2, a pattern of the channel layer 220, the source 230S, the drain 230D, and the data line 14A is separately formed. In an actual process, the pattern is stacked on the patterns of FIGS. 3a and 3B described above. In the example, a portion of the scan line i2 前述 is used as the gate 120G, and the channel layers 2 to 20 are formed on the gate 12 〇 G. Moreover, the channel layer 22 and the gate insulating layer (not shown) The data line 140 and the drain electrode 230D are simultaneously formed on the same, wherein the data line 14〇 and the scan line 12〇 are mutually In other words, the extending direction of the data line 140 is not parallel to the extending direction of the scanning line 120. Preferably, the extending direction of the data line 14 is perpendicular to the extending direction of the scanning line 120. More specifically, this embodiment The channel layer 220 is, for example, a stack of an amorphous germanium layer of 1500 angstroms and an N-type doped amorphous germanium layer of 3 Å, and the data line 14 〇 and the drain 230D of the present embodiment are, for example, 3500 thick. In addition, in the present embodiment, a portion of the data line 140 overlapping the channel layer 220 serves as a source 230S' such that the source 230S and the drain 230D are respectively located on both sides of the channel layer 220. The active device T is completed. As shown in FIG. 2, the active device T is received by the gate 120G, the gate insulating layer (not shown), and the channel layer M415315 from the corresponding data line 140. Therefore, in the respective unitary structure 200, the elemental electrode 250 forms an electric field with the common electrode 21. When the pixel structure 2 is applied to the display panel, the electric field drives the liquid crystal molecules above. It is deflected to varying degrees to produce Display function, and the display panel is a Fringe Field Switching 'FFS LCD panel. It is worth mentioning that such a halogen electrode 250 is designed to divide the upper liquid crystal layer into multiple alignment fields. Further, the display panel using the pixel structure 200 has a function of improving the color shift phenomenon of the display surface and having a wide viewing angle. Referring to FIG. 2 and FIG. 3E, FIG. 3E is a separate dielectric pattern formed in FIG. Schematic diagram of 260 'In an actual process, this pattern is stacked on the pattern of Figures 3A through 3D described above. In particular, as shown in Fig. 2 and Fig. 3E, the pixel structure of the present invention is provided with a dielectric pattern 260' above the halogen electrode 25' to complete the fabrication of the pixel structure. In detail, the dielectric pattern 260 is disposed on the pixel electrode 25A of the second side S2 and covers the branches 254 which are disconnected from each other. In detail, the dielectric pattern 260 is substantially # parallel to the data line 140 and covers the data line 140 and the common line 130. In the present embodiment, the branch 254 that is disconnected from each other is located at the branch 13b and the dielectric pattern. Between 260. The provision of the dielectric pattern 260 can further enhance the control of the liquid crystal molecules above the branch 254 of the halogen electrode 250. In detail, as described above, the branches 254 of the halogen electrodes 250 are in a state of being disconnected from each other on the second side S2, and although such a pixel design contributes to improvement of color shift and widening of viewing angle, the design of these branches 254 is easy. The control force of the liquid crystal molecules on the upper surface of the halogen electrode 250 is weakened, so that the molecules of the liquid crystal 13 M415315 above the portion are susceptible to slight fluctuations in the data voltage, thereby causing severe fluctuations in the surface of the display surface, or generating Light leakage. Therefore, the present invention can reduce the degree of freedom of the liquid crystal molecules above the two 254s by delaying the dielectric pattern 260 covering the branches 254 on the branches 254 which are separated from each other by the halogen electrodes 25, thereby delaying the degree of freedom of the liquid crystal molecules above the two 254s. The liquid crystal molecule reacts to the pressure fluctuation, thereby stabilizing the liquid crystal two, which is easily affected by the electric field, and effectively suppresses the occurrence of defects such as black streaks and dark state light leakage. It is mentioned that the designer can adjust the thickness and the width of the dielectric pattern 260 based on the transmittance, the material of the dielectric pattern or the compatibility of the post-turn process. Specifically, 'the material of the dielectric pattern 26 以 is nitrided SSlNx=, in the embodiment, the thickness of the dielectric pattern can be 6 angstroms = to finely adjust the thickness and the width for different product requirements. Relationship. When the thickness of the dielectric pattern 260 is substantially _〇, at this time, the inner Λ 260 is substantially close to the inner side of the common electrode 210, and the dielectric _26G is away from the common The outer side of the electrode 2 140 ^ line 140 is aligned. In other words, the dielectric diagram II is the width W in the figure. When the thickness of the dielectric pattern 260 is reduced, and ==6 angstroms, the width of the dielectric pattern may be further reduced when the thickness of the pattern pattern is substantially smaller than the width of the predetermined dielectric pattern 260. Creation is not limited to the thickness and width of the pattern 260. The panel is in two steps - the step is shown when the pixel structure 200 is applied to display the position and pattern of the matrix. As shown in Fig. 3F, the black matrix 27 is used when it is used as a display panel. Correspondingly, the light leakage element 7 is disposed above, and the _ money display panel is disposed at a position where the black _ is not limited with respect to the pixel array base, so that the relationship between the components on the substrate is clear, and black is omitted in FIG. The drawing of the matrix. FI is mentioned that the dielectric pattern of this embodiment is, for example, strip-shaped ==; the electric pattern 260 extends from the data line 140 to the top of the trunk 13〇a and = part of the disk trunk 13〇a, in other words, In the halogen array earth plate of the embodiment, the same dielectric pattern 26〇 is used in the pixel unit of the same row, and the=electric pattern 260 is continuously covered over a whole data line 14〇. Of course, the dielectric pattern 260 in the pixel structure 200 may also be an island pattern: as shown in FIG. 4, and FIG. 4 is a top view of another pixel structure of the present invention. Referring to FIG. 4, the pixel structure 3〇〇 of the present embodiment is similar to the pixel structure 200 of FIG. 2. However, the dielectric pattern 26 of the embodiment is an island pattern and exposes the corresponding common line. Part of the trunk of the 13 130 130a. In other words, in the pixel array substrate of the present embodiment, only one dielectric pattern 260 is disposed correspondingly in each of the pixel units, so that the plurality of island patterns on the pixel array substrate 100 are separated from each other and arranged in an array. Since the dielectric patterns 260 on the halogen array substrate 100 are separated from each other, when a liquid drop layer (ODP) technology is used in the subsequent process of fabricating the liquid crystal layer, the dropping rate can be reduced, and thus the subsequent liquid crystal dropping process is performed. Has better compatibility. In addition, FIG. 5 further illustrates a schematic diagram of the upper 15 M415315 of another pixel structure of the present invention. Referring to FIG. 5, the pixel structure 4 of the present embodiment is similar to the pixel structure 200 of FIG. 2, but the = branch 454 of the pixel electrode 45A of the present embodiment is parallel to each other 'further speaking'. For example, the branches 454 in the halogen electrodes are completely parallel to each other in the region to be displayed later, and = the first branch and the second branch which are line-symmetric with each other, which are different from those shown in FIG. 2 and FIG. The structure of the alizarin is 200, 3〇〇. The effect of displaying the brightness of the panel after the panel is set in the dielectric (4) of the creation of the elemental structure.
Hit _面板的齡亮度表現，並則請2佥辛吐 構2〇〇中的介電圖案移除，以作為比較例。旦― AA繞 1认為利用圖2之晝素結構來構成顯示吨後，沿 比較例ITT示亮度模擬圖’而圖犯為作為圖6A之 步將圖h 顯示面板所利用之晝素結構是進一 測的位置= 3 ，圖6Α與圖6Β所量 於：圖^ 線進行量測。惟，差別在 的書幸㈣畫素結構為本創作之具有錢圖案260 置“err圖6B所使用的晝素結構中並無額外設 电圖木。由圖2、圖6A與圖6B可知，蚩表〜 =個分支则嶋峨观圖 6B中^*二圖^中的每一個亮度峰值實質上皆高於圖 甲对應的各骨度峰值，因此介電圖案_的凝 ^升利用此畫素結構2〇〇所構成之顯示面板的古、 現η有效地控制該處上方的液晶分子，進而二纹 現象从及漏光的產生。 呷制…，，又 M415315 比較例。 - 圖8進一步繪示利用前述之晝素結構所構成之顯示面 . 板的電壓與顯示亮度的比較圖。 【主要元件符號說明】 100 :晝素陣列基板 110 :基板 120 :掃描線 • 120G :閘極 130 :共通線 130a :主幹 130b :支幹 140 :資料線 150 :晝素單元 200、300、400 :晝素結構 210 :共同電極 φ 220 :通道層 230D :汲極 230S :源極 240 :保護層 250 :畫素電極 252 :條狀電極 254、254b :分支 254A ··第一分支 19 M415315 254B :第二分支 260 :介電圖案 270 :黑矩陣 Η :開口 S :狹缝 51 :第一側 52 :第二側 Τ:主動元件 Vcom :共通電壓 Wo :重疊寬度 W:介電圖案的寬度The age of the Hit _ panel is expressed in brightness, and the dielectric pattern in the 2 佥 吐 〇〇 2 移除 is removed as a comparative example. Once the AA winding 1 considers that the display of the display structure by using the halogen structure of Fig. 2, the brightness simulation map is shown along the comparative example ITT, and the figure is taken as the step of Fig. 6A. The position of the further test = 3, Figure 6Α and Figure 6Β are measured: Figure ^ line is measured. However, the difference between the book's (four) pixel structure is the money pattern of the creation 260. "There is no additional electric figure in the structure of the element used in the err diagram 6B. As can be seen from Fig. 2, Fig. 6A and Fig. 6B,蚩 table ~ = branch 嶋峨 图 图 图 图 图 图 图 图 ^ ^ ^ ^ ^ ^ 亮度 亮度 亮度 亮度 亮度 亮度 亮度 亮度 亮度 亮度 亮度 亮度 亮度 亮度 亮度 亮度 亮度 亮度 亮度 亮度 亮度 亮度 亮度 亮度 亮度 亮度 亮度 亮度 亮度 亮度The ancient and current η of the display panel formed by the pixel structure 2 effectively control the liquid crystal molecules above the place, and the two-pattern phenomenon and the light leakage are generated. 呷..., and M415315 Comparative Example. - Figure 8 further A comparison diagram of the voltage of the display surface and the display brightness by using the above-described pixel structure is shown. [Description of main component symbols] 100: Alizarin array substrate 110: Substrate 120: Scanning line • 120G: Gate 130: Common line 130a: trunk 130b: branch 140: data line 150: halogen unit 200, 300, 400: halogen structure 210: common electrode φ 220: channel layer 230D: drain 230S: source 240: protective layer 250: Pixel electrode 252: strip electrode 254, 254b: branch 254A ··first point 19 M415315 254B: second branch 260: dielectric pattern 270: black matrix Η: opening S: slit 51: first side 52: second side Τ: active element Vcom: common voltage Wo: overlap width W: dielectric pattern Width
2020