M397522 五、新型說明： 【新型所屬之技術領域】 [0001] 本創作係有關於一種離子感測裝置，尤其是指一種 利用金氧半場效電晶體所具特性之離子感測裝置。 【先前技術】 [0002] 按，生物感測器雖於發展階段中，絕大多數之研究M397522 V. New Description: [New Technology Field] [0001] This creation is about an ion sensing device, especially an ion sensing device that utilizes the characteristics of a gold oxide half field effect transistor. [Prior Art] [0002] According to the biosensor, although in the development stage, most of the research
成果都離商品化及實用性有一段距離，但由於目前化學 爲測器無法媲美生物分子辨識單元之選擇性及親和力， 其相關應用之領域卻已大於生物感測器，故化學感測器 之分子辨識正積極研究與發展，其中由P. Bergveld於 1 970年首先提出之離子感測墙效電晶體〔Ion-Sensitive Fie Id-Effect Transistor，’ ISFET〕係 一微型化學感測器，其為電化學與微電子學相結合之產 物，具有離子選擇電極之功能，又具有場效電晶體之特 性，係與傳統離子選擇電極截然不同之新型離子感測元 件，ISFET主要係以感測膜結合金屬-氧化物-半導體場效 電晶體〔Metal-Oxide-Semiconductor Field-Effect Transistor, M0SFET〕 ， 即將其 M0SFET之閘極 去除而換成感測特性佳之氧化物或氮化物薄膜，再將此 一元件置於不同離子濃度之待測液中，藉由感測膜與待 測溶液中之待測離子形成吸附鍵結之特性，改變感測膜 表面之電位變化，使其通道電流產生改變，進而檢測溶 液中離子濃度。 [0003] 另一種型式之延伸式閘極離子感測場效電晶體〔Ex- tended-Gate Field-Effect Transistor, EGFET〕 表單編號A0101 第3頁/共22頁 M397522 係擁有低成本、構造簡單且能解決封裝問題之分離式 ISFET結構，其結構為分離式閘極感測膜與MOSFET元件 所組合而成，可製作成拋棄式元件等優點，與上述ISFET 之差異在於，ISFET需具有阻抗較高及高介電常數之絕緣 半導體薄膜，而EGFET則需具有低阻抗值及高導電率之導 電半導體薄膜。 [0004] 緣此，本創作人本著求進步之精神及理念，並藉助 多年所累積的專業知識、技術、經驗的輔佐下，不斷致 力於改良與開發，因而創作出一種利用MOSFET元件之離 子感測裝置。 【新型内容】 「ΛΛΛ—Ί L I tL. χ. V. Tt ^ Λ-J^ - » ILL TTZ7 LUUUOj 令;g'j Tf之主要曰的社々'i捉一棰離丁斜凋衣直，丹 係可利用氮化鋁層與酸鹼溶液中之酸鹼離子形成吸附鍵 結、改變表面之電位變化，使得金氧半場效電晶體之通 道電流產生改變而檢測酸鹼離子之濃度，且具有良好之 感測特性而適用於p Η值之感測，極具產業上之利用性。 [0006] 本創作之離子感測裝置較佳實施例的特徵在於，其 主要係具有一感測器，感測器之内部係設置有一基板， 基板之頂面形成有一半導體層，半導體層之頂面形成有 一氮化鋁層〔Α1Ν〕，並於感測器之頂面對應於半導體層 氮化鋁層處係形成有一感測窗口，可由此處檢測酸鹼溶 液之酸鹼值，且於半導體層上固設有一導線，導線連接 至一金氧半場效電晶體之閘極，俾可利用氮化鋁層與酸 鹼溶液中之酸鹼離子形成吸附鍵結、改變表面之電位變 化，使得金氧半場效電晶體之通道電流產生改變而檢測 表單編號Α0101 第4頁/共22頁 M397522 δλ驗離子之，農度，且具有良好之感測特性，極具產業上 之利用性。 [_ ㈣本_之離子制裝置魄實施例，該導線係 以銀膠固設於該半導體層上。 【實施方式】 為7本創作所運用之技術内容、創作目的及其達成 之功效有更完整且清楚的揭露，茲於下詳細說明之，並 請一併參閱所揭之圖式及圖號： 首先，凊參照第一圖所示，係本創作之離子感測裝 置其一較佳實施例之示意圖，其係包括一感測器（1 ) ’感測器（1 )連接至一金氧半場效電晶體〔Metal —The results are far from commercialization and practicality. However, because the current chemical detectors can't match the selectivity and affinity of the biomolecular identification unit, the related applications are larger than the biosensors, so the chemical sensors Molecular identification is actively researching and developing. The Ion-Sensitive Fie Id-Effect Transistor (ISFET), first proposed by P. Bergveld in 1970, is a micro-chemical sensor. The combination of electrochemistry and microelectronics has the function of ion-selective electrode and the characteristics of field-effect transistor. It is a new type of ion sensing component that is completely different from traditional ion-selective electrode. ISFET is mainly combined with sensing membrane. Metal-Oxide-Semiconductor Field-Effect Transistor (M0SFET), which removes the gate of its MOSFET and replaces it with an oxide or nitride film with good sensing characteristics. In the liquid to be tested with different ion concentrations, the sensing film forms a characteristic of adsorption bonding with the ions to be tested in the solution to be tested, and the sense of change is changed. The potential change on the surface of the film is measured to change the channel current, and the ion concentration in the solution is detected. [0003] Another type of Extended-Gate Field-Effect Transistor (EGFET) Form No. A0101 Page 3 of 22 M397522 has low cost and simple structure. A separate ISFET structure capable of solving the package problem, the structure of which is a combination of a split gate sensing film and a MOSFET component, and can be fabricated into a disposable component. The difference from the above ISFET is that the ISFET needs to have a higher impedance. And an insulating semiconductor film having a high dielectric constant, and the EGFET requires a conductive semiconductor film having a low resistance value and a high electrical conductivity. [0004] For this reason, the creator has been striving for improvement and development with the help of years of accumulated expertise, technology, and experience, and has created an ion using MOSFET components. Sensing device. [New content] "ΛΛΛ-Ί LI tL. χ. V. Tt ^ Λ-J^ - » ILL TTZ7 LUUUOj order; g'j Tf's main 々 々 'i catch a 棰 丁 斜 oblique straight, The Dan system can utilize the aluminum nitride layer to form an adsorption bond with the acid-base ions in the acid-base solution, change the potential change of the surface, and change the channel current of the gold-oxygen half-field effect transistor to detect the concentration of the acid-base ion, and have Good sensing characteristics and suitable for sensing of p Η value, which is highly industrially applicable. [0006] The preferred embodiment of the ion sensing device of the present invention is characterized in that it mainly has a sensor. The inside of the sensor is provided with a substrate. The top surface of the substrate is formed with a semiconductor layer. The top surface of the semiconductor layer is formed with an aluminum nitride layer, and the top surface of the sensor corresponds to the semiconductor layer aluminum nitride layer. The system is formed with a sensing window, wherein the acid-base value of the acid-base solution can be detected, and a wire is fixed on the semiconductor layer, and the wire is connected to the gate of a gold-oxygen half field effect transistor, and the aluminum nitride can be utilized. The layer forms an adsorption bond with the acid-base ions in the acid-base solution Change the potential change of the surface, so that the channel current of the gold-oxygen half-field effect transistor changes, and the detection form number Α0101 Page 4 / Total 22 pages M397522 δλ test ion, agricultural degree, and has good sensing characteristics, very Industrial Applicability [1-4] The ion device of the present invention is an embodiment in which the wire is fixed on the semiconductor layer with silver glue. [Embodiment] The technical content, the purpose of creation, and the purpose of the creation of the seven creations are The effect achieved is more complete and clear, as explained in detail below, and please refer to the illustrated figure and figure number: First, see the first figure, the ion sensing of this creation A schematic diagram of a preferred embodiment of the device includes a sensor (1) 'sensor (1) connected to a metal oxide half field effect transistor [Metal —
Oxide-Semiconductor Field-Effect Transistor, MOSFET〕（ 2 )，其中： [0010] 該感測器（1 )之内部係設置有一玻璃材質之基板 (1 1 )，基板（1 1 )之頂面形成有一半導體層（1 2 )，例如一氧化銦錫層，而半導體層（1 2 )之頂面 以滅鍍之方式形成有一氮化鋁層〔Ain〕（13)，可與 酸驗溶液中之酸鹼離子形成吸附鍵結、改變表面之電位 變化’使得該金氧半場效電晶體（2 )之通道電流產生 改變而檢測酸鹼離子之濃度，並於感測器（1 )之頂面 對應於氮化鋁層（1 3 )處係形成有一2x2mra2之感測窗 口（ 1 4 )，可由此處檢測酸鹼溶液之酸鹼值，且於半 導體層（1 2)上以銀膝固設有一導線（1 5)，以供 連接至5玄金氧半場效電晶體（2)之閘極， 表單編號A0101 第5頁/共22頁 [0011] [0011] [0012] [0013] [0014] [0015] 該金氧半場效電晶體（2)在一個夠大的電位差施 ;極與源極之間時，電場會在氧化層下方的半導體表 面形成感應電荷，而這時所謂的反轉通道〔inversion channel〕就㈣成，待通道形成後，金氧半場效電晶體 (2 )即可讓電流通過，而依據施於閘極的電壓值不同 ，可由金氧半場效電晶體（2)的通道流過的電流大小 亦會受其控制而改變。 於實施製作時，請參閱第二圖，係本創作離子感測 裝置之製造步驟流程圖，其係包括下列之各步驟： a. 於基板上依序形成有相疊設之半導體層與氮化鋁 層：請一併參照第一圖所示，其係於射頻濺鍍系統中以 ....... -...... ·· 站靶為濺鍍靶材，並通入流量比為3 : i之氬氣〔Ar〕及 氮氣〔%〕，且於濺鍍功率為8〇瓦特〔w〕、濺鍍工作壓 力為10毫托耳〔mTorr〕之環境下將氮化鋁層（丄3 )沈 積於50°C、1〇〇。(：或15(TC的具半導體層（丄2 )之基板 (1 1)上，以形成氮化銘/氧化銦錫/玻璃基板之離子 感測結構，且氮化鋁層（1 3 )之厚度約為4369埃； b. 於半導體層上固定有導線：請一併參照第一圖所 示，其係將一導線（1 5 )利用銀膠固定於該半導體層 (1 2 )上； c. 將基板、半導體層、氮化鋁層與導線封裝形成感 測器，感測器上對應於氮化銘層處形成有感測窗口：請 一併參照第一圖所示，其係利用環氧樹脂將基板（工工 )、半導體層（1 2 )、氮化鋁層（1 3 )與導線（1 表單編號A0101 第6頁/共22頁 [⑻ 16] 5 )及玻璃毛細管一起封裝形成一感測器（丄），感測 器（1 )之頂面對應於氮化鋁層（i 3)處係形成有一2 x2mm2之感測窗口（14)，可由此處檢測酸鹼溶液之酸 鹼值； d.將導線連接至金氧半場效電晶體之閘極：請一併 參照第一圖所示，其係將導線（1 5)之另一端連接至 一金氧半場效電晶體（2)之閘極，以利用氮化鋁層（ 1 3 )與酸鹼溶液中之酸鹼離子形成吸附鍵結、改變表 面之電位變化，使得金氧半場效電晶體（2)之通道電 流產生改變而檢測酸鹼離子之濃度。 [0017] 於實施量測前，請參照第三圖所示，可先將金氧半 場效電晶體（2 )之汲極與源極分別與Keithley 42〇〇 等半導體特性〔電流一電壓〕儀（3)相耦接，以進一 步將金氧半場效電晶體（2)所測得之電訊號做數據處 理，並將感測器（1 )浸入一裝有待測溶液之容器（4 )中，而容器（4)係放置於一光遮蔽容器（5)中， 以避免光線對量測數值之影響，且於容器（4)與光遮 蔽容器（5)之間設有加熱器（5 i )，加熱器（5工 )耦接於一控溫裝置（5 2 )，例如一PID controller 等，再於谷器（4)之待測溶液中放置一感溫器（4 1 )，例如一熱電偶〔thermocouple〕，在溫度量測的反 應靈敏度上較一般的溫度計高而可達到更加迅速、準確 之反應效果，感溫器（4 1 )耦接於控溫裝置（5 2 ) ’以利用感溫器（4 1 )感測容器（4)中待測溶液之 溫度上升或下降，並由控溫裝置（5 2)控制加熱器（ 表單編號A0101 第7頁/共22頁 [0018] )進仃加熱或停止加熱之動作，且於待測溶液中浸 ’可為一銀/氣化銀〔Ag/AgCl〕 4 2)耦接於半導體特性儀（3 於實施量測時，請參照第三圖所示，其係於一固定 溫度下’例如室溫25。^變容器（4)中待測溶液之 酸驗值，例如p㈣、3、5、7、9、Uw_4Oxide-Semiconductor Field-Effect Transistor, MOSFET] (2), wherein: [0010] The interior of the sensor (1) is provided with a glass substrate (1 1 ), and a top surface of the substrate (1 1 ) is formed a semiconductor layer (1 2 ), such as an indium tin oxide layer, and a top surface of the semiconductor layer (12) is formed by an aluminum nitride layer [Ain] (13) in an off-plating manner, which can be used with an acid in the acid solution. The alkali ions form an adsorption bond and change the potential change of the surface to change the channel current of the gold-oxygen half field effect transistor (2) to detect the concentration of the acid-base ion, and the top surface of the sensor (1) corresponds to The aluminum nitride layer (13) is formed with a sensing window (14) of 2x2mra2, wherein the acid-base value of the acid-base solution can be detected therefrom, and a wire is fixed on the semiconductor layer (12) with silver knees. (1 5), for connection to the gate of 5 Xuanjin Oxygen Half-Field Effect Transistor (2), Form No. A0101 Page 5 of 22 [0011] [0011] [0012] [0014] [0014] 0015] The gold-oxygen half-field effect transistor (2) is applied with a large potential difference; the electric field is below the oxide layer between the pole and the source The surface of the semiconductor forms an induced charge, and at this time, the so-called inversion channel is formed. After the channel is formed, the gold-oxide half-field effect transistor (2) allows the current to pass, and according to the voltage applied to the gate. Differently, the magnitude of the current flowing through the channel of the gold-oxygen half-field effect transistor (2) is also controlled by its control. In the implementation of the production, please refer to the second figure, which is a flow chart of the manufacturing steps of the present ion sensing device, which includes the following steps: a. sequentially forming a stacked semiconductor layer and nitriding on the substrate. Aluminum layer: Please refer to the first figure as shown in the figure. It is connected to the RF sputtering system...................... The target is the sputtering target and the flow is introduced. The ratio of 3: i argon gas [Ar] and nitrogen [%], and the aluminum nitride layer in the environment of sputtering power of 8 watts [w], sputtering working pressure of 10 mTorr [mTorr] (丄3) deposited at 50 ° C, 1 〇〇. (: or 15 (TC) on the substrate (1 1) of the semiconductor layer (丄2) to form an ion sensing structure of a nitrided/indium tin oxide/glass substrate, and an aluminum nitride layer (13) The thickness is about 4369 angstroms; b. The wire is fixed on the semiconductor layer: as shown in the first figure, a wire (15) is fixed on the semiconductor layer (1 2 ) by using silver glue; The substrate, the semiconductor layer, the aluminum nitride layer and the wire are packaged to form a sensor, and a sensing window is formed on the sensor corresponding to the nitride layer: please refer to the first figure together, and the system utilizes the ring The oxyresin encapsulates the substrate (worker), the semiconductor layer (1 2 ), the aluminum nitride layer (1 3 ) and the wire (1 Form No. A0101, page 6 / 22 pages [(8) 16] 5 ) and the glass capillary tube together. a sensor (丄), a top surface of the sensor (1) corresponding to the aluminum nitride layer (i 3) is formed with a 2 x 2 mm 2 sensing window (14), from which the acidity of the acid-base solution can be detected Base value; d. Connect the wire to the gate of the gold oxide half field effect transistor: Please refer to the first figure together, which connects the other end of the wire (15) to a gold oxide. The gate of the half field effect transistor (2) is formed by utilizing the aluminum nitride layer (13) to form an adsorption bond with the acid-base ions in the acid-base solution, and changing the potential change of the surface, so that the gold oxide half field effect transistor (2) The channel current is changed to detect the concentration of the acid-base ions. [0017] Before performing the measurement, please refer to the third figure, respectively, the drain and source of the gold-oxygen half-field effect transistor (2) It is coupled with a semiconductor characteristic [current-voltage] instrument (3) such as Keithley 42〇〇 to further process the electrical signals measured by the gold-oxygen half-field effect transistor (2), and the sensor (1) Immersed in a container (4) containing the solution to be tested, and the container (4) is placed in a light-shielding container (5) to avoid the influence of light on the measured value, and in the container (4) and light A heater (5 i ) is disposed between the shielding containers (5), and the heater (5 working) is coupled to a temperature control device (52), such as a PID controller, and then to the valley device (4) to be tested. A temperature sensor (4 1 ) is placed in the solution, such as a thermocouple, which is more sensitive in temperature measurement. The thermometer is high and can achieve a more rapid and accurate reaction. The temperature sensor (4 1 ) is coupled to the temperature control device (5 2 ) to sense the container (4) with the temperature sensor (4 1 ). The temperature of the solution is measured to rise or fall, and the temperature control device (5 2) controls the heater (Form No. A0101, page 7 / page 22 [0018]) to heat or stop the heating, and in the solution to be tested The dip can be a silver/vaporized silver [Ag/AgCl] 4 2) coupled to the semiconductor characteristic meter (3, when performing measurement, please refer to the third figure, which is attached to a fixed temperature, for example, room Warm 25. ^ Acid value of the solution to be tested in the variable vessel (4), such as p (four), 3, 5, 7, 9, Uw_4
時，半導體特性儀（3 )對於參考電極（4 2)之供應 電壓係為〇伏特至6伏特，而對於金氧半場效電晶體 (2 )之源/汲極電壓則固定為0.2伏特，並以半導體特 性儀（3)測量並記錄金氧半場效電晶趙（2)之沒極 電流對閉極M n—v〕之翁，盲：併倾第四圖所 示’即可量測域測H ( i )於各待聰液巾所響應之 沒極電流對間極M曲線’可得知閣極電齡隨值而 增加，再利用該没極電流對閘極電麼之曲線，取一固定 電流以求出感測器（i )於肌時之感測度〔s =、/pH 〕’請-併參照第五圖所示，可得知感測器（丄）之氣 化銘層（13)〔請-併參照第—圖所示〕係擁有良好 之感測特性’非常適用於pH值之感測。 [0019] 入一參考電極（4 2) 電極，再將參考電極（ )，以提供穩定電位。 請再參照第六圖所示，係本創作之恨壓怪流讀出電 路的電壓-時間量測狀態圖’其係、以負回授模式將金氧When the semiconductor characteristic meter (3) supplies voltage to the reference electrode (42) to 〇V to 6 volts, and for the MOS field effect transistor (2), the source/drain voltage is fixed at 0.2 volts, and Measure and record the immersion current of the gold-oxygen half-field electric crystal Zhao (2) to the closed-pole M n-v] by the semiconductor characteristic meter (3), blind: and tilt the fourth graph to show the 'measureable domain' Measure H ( i ) in the immersed current to the inter-pole M curve responsive to each of the fluent liquid wipes. It can be seen that the age of the pole is increased with the value, and then the curve of the gate current is used. A fixed current to determine the sensitivity of the sensor (i) to the muscle [s =, /pH] 'Please - and refer to the fifth figure, you can know the gasification layer of the sensor (丄) (13) [Please - and refer to the figure - shows that there are good sensing characteristics 'is very suitable for pH sensing. [0019] A reference electrode (42) electrode is placed, and a reference electrode () is applied to provide a stable potential. Please refer to the sixth figure again, which is the voltage-time measurement state diagram of the hate-squeaky flow reading circuit of the present invention, which is in the negative feedback mode.
半場效電晶體（2)之汲極與源極間保'持固定之電壓丫 ^ β S 以及艮疋之電"IL 1 DS，使元件響應之訊號反應於閘極電 壓上，其中之固定電壓VDS控制於0.2伏特，而恆定電流The half-field effect transistor (2) between the drain and the source maintains a fixed voltage 丫^β S and 艮疋's electric "IL 1 DS, so that the component response signal reacts to the gate voltage, which is fixed Voltage VDS is controlled at 0.2 volts, while constant current
Ids控制於〇. 2毫安培〔mA〕，並以伏特計（6 )測量且 表單編號A0101 第8頁/共22頁 輸出至一電腦（7)而記錄金氧半場效電晶體（2)之 電壓對時間之曲線’請—併參照第七圖所示，即可量測 出感測器（1 )於各待測溶液中所響應之電壓對時間曲 線，再利用該電壓對時間之曲線求出感測器（丄）之感 測度，請一併參照第八圖所示，可得知感測器（i )之 氮化鋁層（1 3)係擁有良好之感測特性而適用於邱值 之感測。 [0020] 請再參照第九圖所示，係本創作離子感測裝置其二 較佳實施例之示意圖，其與其一較佳實施例的差異處係 在於該感測器（1)之感測窗口（ i 4 )進一步的形成 有一高分子膜（1 6 )，例七將聚氣匕稀:〔Polymer Vinyl Chloride，PVC〕' 癸二酸二辛酯〔 Bis(2-ethylhexyl) Sebacate，DOS〕、有機汞離子 載體〔ETH9033〕與陰離子交換劑〔TDDMAC1〕等溶於四 氫夫喃〔Tetra Hydro Furan，THF〕溶液之高分子材 料滴於感測窗口（ 1 4)上靜置8小時而自然固化者，且 聚氣乙烯、癸二酸二辛酯、有機汞離子載體與陰離子交 換劑之重量百分比之比例為33 : 66 : 2 : 1 0，以供檢測氣 離子，或可為供檢測鈉、鉀、鈣等不同離子之高分子膜 (1 6 )，以配合使用於各種之檢測場合，然而前述之 實施例或圖式並非限定本創作之產品態樣、固定結構或 量測方式’任何所屬技術領域中具有通常知識者之適當 變化或修飾，皆應視為不脫離本創作之專利範嘴。 由上述之元件組成與實施說明可知，本創作與現有 結構相較之下，本創作具有以下之優點： 表單編號A0101 第9頁/共22頁 [0021] [0022]M397522 1. 本創作之感測器内所設置之基板頂面形成有一半 導體層，半導體層之頂面形成有一氮化鋁層，並於感測 器之頂面對應於半導體層氮化鋁層處係形成有一感測窗 口，可由此處檢測酸鹼溶液之酸鹼值，且於半導體層上 固設有一導線，導線連接至一金氧半場效電晶體之閘極 ，俾可利用氮化鋁層與酸鹼溶液中之酸鹼離子形成吸附 鍵結、改變表面之電位變化，使得金氧半場效電晶體之 埤道電流產生改變而檢測酸鹼離子之濃度，且具有良好 之感測特性而適用於pH值之感測，極具產業上之利用性 〇 [0023] 2. 本創作之感測窗口係可進一步的形成有一高分子 膜，以供檢測氣離子，或可為勒、卸鈣等不同 離子之高分子膜，以配合使用於各種之檢測場合。 [0024] 综上所述，本創作實施例確能達到所預期之使用功 效，又其所揭露之具體構造，不僅未曾見諸於同類產品 中，亦未曾公開於申請前，誠已完全符合專利法之規定 與要求，爰依法提出新型專利之申請，懇請惠予審查， 並賜准專利，則實感德便。 【圖式簡單說明】 [0025] 第一圖：本創作其一實施例之感測器剖視圖 第二圖：本創作之製造步驟流程圖 第三圖：本創作之電流一電壓量測狀態圖 第四圖：本創作之汲極電流一閘極電壓曲線圖 第五圖：本創作之反應電位線性曲線圖 第六圖：本創作之電壓一時間量測狀態圖 表單編號A0101 第10頁/共22頁 M397522 第七圖：本創作之電壓一時間曲線圖 第八圖：本創作之反應電位線性曲線圖 第九圖：本創作其二實施例之感測器剖視圖 (6 ) 【主要元件符號說明】 [0026] ( 1 ) 感測器 (12)半導體層 (1 4)感測窗口 (1 6)高分子膜 (3) 半導體特性儀 (4 1 )感溫器 (5) 光遮蔽容器 (5 2)控溫裝置 (7 ) 電腦 (1 1 )基板 (13)氮化鋁層 (15)導線 (2) 金氧半場效電晶體 (4 ) 容器 (4 2)參考電極 (5 1:.)加熱器' 伏特計 表單编號A0101 第11頁/共22頁Ids is controlled at 毫 2 mA [mA] and measured in volts (6) and form number A0101 page 8 / total 22 pages output to a computer (7) to record the voltage of the gold oxide half field effect transistor (2) The curve of time 'please' - and referring to the seventh figure, the voltage versus time curve of the sensor (1) in each solution to be tested can be measured, and the curve of the voltage versus time can be obtained. For the sensitivity of the sensor (丄), please refer to the eighth figure. It can be seen that the aluminum nitride layer (1 3) of the sensor (i) has good sensing characteristics and is suitable for the value of Qiu. Sensing. [0020] Referring again to FIG. 9, a schematic diagram of a second preferred embodiment of the present ion sensing device is shown, and the difference from the preferred embodiment thereof is the sensing of the sensor (1). The window (i 4 ) is further formed with a polymer film (16), and the seventh example is a mixture of [Polymer Vinyl Chloride, PVC] 'Bis(2-ethylhexyl) Sebacate, DOS) a polymer material such as an organic mercury ionophore [ETH9033] and an anion exchanger [TDDMAC1] dissolved in a tetrahydrofuran (THF) solution is allowed to stand on the sensing window (14) for 8 hours and naturally The curing agent, and the ratio of the weight percentage of polyethylene, dioctyl sebacate, organic mercury ionophore and anion exchanger is 33: 66 : 2 : 1 0 for detecting gas ions, or may be used for detecting sodium Polymer films of different ions such as potassium and calcium (16) are used in combination with various detection occasions. However, the foregoing examples or drawings do not limit the product aspect, fixed structure or measurement method of the present invention. Suitable for those with ordinary knowledge in the technical field Changes or modifications are possible without departing from this should be regarded as the creation of Van mouth. It can be seen from the above components and implementation description that this creation has the following advantages compared with the existing structure: Form No. A0101 Page 9 of 22 [0021] [0022] M397522 1. The sense of creation A semiconductor layer is formed on a top surface of the substrate disposed in the detector, an aluminum nitride layer is formed on a top surface of the semiconductor layer, and a sensing window is formed on a top surface of the sensor corresponding to the aluminum nitride layer of the semiconductor layer. The acid-base value of the acid-base solution can be detected here, and a wire is fixed on the semiconductor layer, and the wire is connected to the gate of a gold-oxygen half field effect transistor, and the aluminum oxide layer and the acid in the acid-base solution can be utilized. The alkali ions form an adsorption bond and change the potential change of the surface, so that the channel current of the gold-oxygen half-field effect transistor is changed to detect the concentration of the acid-base ion, and the sensing characteristic is good, and the pH is suitable for sensing. Very industrially useful [0023] 2. The sensing window of this creation can be further formed with a polymer film for detecting gas ions, or a polymer film of different ions such as Le, calcium, etc. To match Used in a variety of testing applications. [0024] In summary, the present embodiment can achieve the expected use efficiency, and the specific structure disclosed therein has not been seen in similar products, nor has it been disclosed before the application, and has completely complied with the patent. The provisions and requirements of the law, the application for a new type of patent in accordance with the law, the application for review, and the grant of a patent, the real sense of virtue. BRIEF DESCRIPTION OF THE DRAWINGS [0025] First Figure: A cross-sectional view of a sensor according to an embodiment of the present invention. FIG. 2: Flow chart of the manufacturing steps of the present creation. FIG. 3: Current-voltage measurement state diagram of the present creation Four Diagrams: The Radial Current-Gate Voltage Curve of the Creation Figure 5: The Linear Curve of the Reaction Potential of the Creation: Figure 6: The Voltage of the Creation Time Measurement Status Chart Form No. A0101 Page 10 of 22 Page M397522 Figure 7: Voltage vs. Time Curve of the Creation Figure 8: Linear Curve of Reaction Potential of the Creation: Figure 9: Sectional view of the sensor of the second embodiment (6) [Description of main components] [0026] (1) sensor (12) semiconductor layer (14) sensing window (16) polymer film (3) semiconductor characteristic meter (4 1) temperature sensor (5) light shielding container (5 2 Temperature control device (7) computer (1 1 ) substrate (13) aluminum nitride layer (15) wire (2) gold oxygen half field effect transistor (4) container (4 2) reference electrode (5 1:.) heating 'Voltmeter Form No. A0101 Page 11 of 22
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