TWM376761U - Semiconductor pressure sensor - Google Patents
Semiconductor pressure sensor Download PDFInfo
- Publication number
- TWM376761U TWM376761U TW098216980U TW98216980U TWM376761U TW M376761 U TWM376761 U TW M376761U TW 098216980 U TW098216980 U TW 098216980U TW 98216980 U TW98216980 U TW 98216980U TW M376761 U TWM376761 U TW M376761U
- Authority
- TW
- Taiwan
- Prior art keywords
- pressure sensor
- semiconductor pressure
- substrate
- sensor according
- semiconductor
- Prior art date
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- Measuring Fluid Pressure (AREA)
Description
7. 103年又月Θ日更正替換頁 如申請專利範圍第2項所述之半導體壓力感測器，其更包含有一訊號處 理電路’其係位於該基底上。 8.(删除)如巾請專利範圍第丨項所述之半導體壓力感測器，其中該訊號處 里電路包含有-訊號處理模組、—微控㈣、—記憶體與—電源供應器， 其透過該導線區彼此電性相連。 (J除)如申δ月專利範圍帛】項所述之半導體壓力感測器，其更包含有— 穿槽’其係由該基底之底面連通至該腔體，以形成一相對壓力感測器。 (刪除)如申晴專利範圍第3項所述之半導體壓力感測器，其中該導線區、 該擴散電阻體區與祕縣係積體電路製程所形成。 (冊1j除)如巾4專利範圍第丨項所述之半導體壓力感測器其中該基底孔 隙化時係形成兩層多孔狀石夕材，其下層之孔隙密度大於上層在該退火 處理^孔隙密度之多孔狀頻將空洞化，低孔隙密度之多孔狀石夕材將 產生緻密化。7. Replacement page of the year of the first day of the present invention. The semiconductor pressure sensor of claim 2, further comprising a signal processing circuit </ RTI> disposed on the substrate. 8. The invention relates to a semiconductor pressure sensor according to the scope of the invention, wherein the signal circuit comprises a signal processing module, a micro control (four), a memory and a power supply, They are electrically connected to each other through the wire region. A semiconductor pressure sensor according to the invention of the present invention, further comprising: a through groove connected to the cavity from a bottom surface of the substrate to form a relative pressure sensing Device. (Deleted) The semiconductor pressure sensor of claim 3, wherein the wire region, the diffusion resistor body region, and the Mixian system integrated circuit process are formed. The invention relates to a semiconductor pressure sensor according to the invention of claim 4, wherein the substrate is voided to form two layers of porous stone materials, and the lower layer has a larger pore density than the upper layer in the annealing treatment. The density of the porous frequency will be hollowed out, and the low-porosity porous stone will be densified.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW098216980U TWM376761U (en) | 2009-09-30 | 2009-09-30 | Semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW098216980U TWM376761U (en) | 2009-09-30 | 2009-09-30 | Semiconductor pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWM376761U true TWM376761U (en) | 2010-03-21 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098216980U TWM376761U (en) | 2009-09-30 | 2009-09-30 | Semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWM376761U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI583931B (en) * | 2016-02-02 | 2017-05-21 | Asia Pacific Microsystems Inc | Miniature piezoresistive pressure sensor |
| TWI629460B (en) * | 2015-02-16 | 2018-07-11 | 邁爾森電子（天津）有限公司 | MEMS pressure sensor and method of forming same |
-
2009
- 2009-09-30 TW TW098216980U patent/TWM376761U/en not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI629460B (en) * | 2015-02-16 | 2018-07-11 | 邁爾森電子（天津）有限公司 | MEMS pressure sensor and method of forming same |
| TWI583931B (en) * | 2016-02-02 | 2017-05-21 | Asia Pacific Microsystems Inc | Miniature piezoresistive pressure sensor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4K | Expiration of patent term of a granted utility model |