M364877 五、新型說明： 【新型所屬之技術領域】 及背光模組，特別是關於一 、發光晶片封裝件及背光模 本新型關於-種分光裝置、發光晶片封裝件 種可有效_人光面法線方向之光線之分光敦置 組。 【先前技術】M364877 V. New description: [New technology field] and backlight module, especially for one, light-emitting chip package and backlight module. The new type of spectroscopic device and light-emitting chip package can be effective. The light of the line direction is divided into groups. [Prior Art]
由於電子產品皆朝著輕薄短小的方向發展，因此 板亦必須薄型化方能符合消f者的需求 中之·、、、貝不面 知九日日片具有體積小、耗電低、響 應快、使用期限長等優點，故發光晶片已逐漸細於背光模組中，作為背光 模組的光源，發光晶片例如可為—發光二極體(Lig贴；led)。 請參照圖1 ’ 一種習知側光式背光模組1包含-發光晶片封裝件η以及 -導光板12。發光晶片封裝件u所發出之光線由入光面ΐ2ΐ射入導光板^， 圖示中的総u即由出絲122離料光板12，光線L2則被與出光面122 相對之擴光結構123(例如_)反射後再由出光面122射出。由於發光晶片之 發光面法線NU向之光線⑶與出光面122及擴光結構123排列面平行，因 此光線LN無法直接或經反射後由出光面122射出而無法被有效地利用。 圖2為習知發光晶片封裝件之光強度分佈圖，圖中所示的角度為出光方 向與發光晶片之發光面法線之夾角。如圖2所示，習知發光晶片封裝件之光 強度分佈多為朗伯(lambertian)分佈，亦即發光晶片之發光面法線方向的光能 量最強。請同時參照圖1，由於法線N1方向之光線LN最強卻無法被有效地 利用’因此’結合此一發光晶片封裝件之側光式背光模組，其光利用率較低。 若將此一發光晶片封裝件應用於直下式背光模組，由於發光面法線方向之光 能量較強’容易產生亮度不均勻的缺點。另一種習知發光晶片封裝件之光強 M364877 7毛光面/綠方向的光線’進而提昇光细率；應用於直下式背光模組時可 提昇混光效果，進而縮航紐長度並降赠光模_厚度且使亮度更為均 勻。 【實施方式】 “ α下將參照相_式’說明本創作之分光裝置、發光；封裝件及背光 模組，其中相同的元件將以相同的參照符號加以說明。 籲 睛參照圖3a至圖3c ’本創作-實施例之發光晶片封聚件2包含-基座 ^、-發光晶片22以及-封裝體23。基座21之一表面設有至少一電極(未圖 不）。發光晶片22設置於基座21的表面並與電極電性連接，此外，發光晶片 22具有-發光面22a。舉例而言，發光晶片22可為紅光、綠光、藍光或以上 之組合之發光晶片，而發光晶片22可為發光二極體(LED)。封裝體23則包覆 ^光曰曰片22。封裝體23具有一相對基座21表面凸出之一出光面231，且出 光面231包含一第一反射面232以及一第二反射面233 ^第一反射面232與 第二反射面233互相連接而於出光面231上定義出一溝槽234，且第一反射 •面232與第二反射面233相交形成之一直線SL與發光面22a之法線N1互相 垂直。 tSince electronic products are moving in a light, thin and short direction, the board must also be thinner in order to meet the needs of consumers, and, in the case of the nine-day film, it has a small size, low power consumption, and fast response. The light-emitting chip is gradually thinner than the backlight module. As the light source of the backlight module, the light-emitting chip can be, for example, a light-emitting diode (Lig sticker; led). Referring to FIG. 1 ', a conventional edge-lit backlight module 1 includes a light-emitting chip package η and a light guide plate 12. The light emitted by the light-emitting chip package u is incident on the light guide plate by the light-incident surface ΐ2, and the 総u in the figure is separated from the light-receiving plate 12 by the wire 122, and the light ray L2 is defined by the light-emitting structure 123 opposite to the light-emitting surface 122. (for example, _) is reflected and then emitted by the light exit surface 122. Since the light ray (3) of the light-emitting surface of the light-emitting surface is parallel to the light-emitting surface 122 and the light-emitting surface 123, the light ray LN cannot be directly or reflected and is emitted from the light-emitting surface 122, so that it cannot be effectively utilized. 2 is a light intensity distribution diagram of a conventional light-emitting chip package, the angle shown in the figure is the angle between the light-emitting direction and the normal of the light-emitting surface of the light-emitting chip. As shown in Fig. 2, the light intensity distribution of the conventional light-emitting chip package is mostly a lambertian distribution, that is, the light energy in the normal direction of the light-emitting surface of the light-emitting chip is the strongest. Referring to Fig. 1, at the same time, since the light LN in the direction of the normal line N1 is the strongest, it cannot be effectively utilized. Therefore, the edge-light type backlight module of the light-emitting chip package is combined, and the light utilization efficiency is low. If the light-emitting chip package is applied to a direct-type backlight module, the light energy in the normal direction of the light-emitting surface is strong, and the uneven brightness is likely to occur. Another known light-emitting chip package light intensity M364877 7 hair surface / green direction of light 'to enhance the light fineness; when applied to the direct-type backlight module can enhance the light mixing effect, and thus reduce the length of the button and drop the gift Light mode _ thickness and make the brightness more uniform. [Embodiment] "The spectroscopic device, the light-emitting device, the light-emitting device, the package and the backlight module of the present invention will be described with reference to the phase _", wherein the same elements will be described with the same reference symbols. Referring to Figures 3a to 3c The luminescent wafer encapsulation member 2 of the present invention-embodiment includes a susceptor, an illuminating wafer 22, and a package 23. One surface of the susceptor 21 is provided with at least one electrode (not shown). The surface of the susceptor 21 is electrically connected to the electrode. Further, the illuminating wafer 22 has a light emitting surface 22a. For example, the luminescent wafer 22 can be a red, green, blue light or a combination of the above illuminating wafers, and the illuminating light is emitted. The package 22 can be a light-emitting diode (LED). The package body 23 is covered with a light-emitting sheet 22. The package body 23 has a light-emitting surface 231 protruding from the surface of the base 21, and the light-emitting surface 231 includes a first surface. a reflective surface 232 and a second reflective surface 233. The first reflective surface 232 and the second reflective surface 233 are interconnected to define a trench 234 on the light-emitting surface 231, and the first reflective surface 232 and the second reflective surface 233 intersects to form one of the straight lines SL and the normal line N1 of the light-emitting surface 22a. Vertical. T
於此實施例中，第一反射面232與第二反射面233相交形成之直線SL ' .與發光面22a之法線N1相交，且發光晶片封裝件2之溝槽234呈對稱配置， 亦即第一反射面232及第二反射面233與發光面22a之法線N1的失角相同， 約為10度至40度。需注意者，第一反射面232及第二反射面233與發光面 22a之法線N1的夾角亦可依不同的分光需求而採取不同角度的配置。此外， 第一反射面232以及第二反射面233亦可分別由單一平面或是多個與法線^^ 夾角不同的平面所組成。請參照圖3c，溝槽234的深度D1與封裝體23於發 5 M364877 光面22a法線N1方向上的投影距離η的比值較佳為0.05至0.83。 如圖3c所示，靠近法線Ν1方向之光線L3，經第一反射面232反射後即 偏離法線N1方向，再經侧壁之出光面231折射後，光線L3往偏離側壁出光 面231之法線的方向射出。另一較偏離法線N1之光線L4，同樣經第一反射 面232反射後偏離法線N1方向，之後經正面之出光面231折射後，光線L4 .往偏離正面出光面231之法線的方向射出。由圖3c可以看出，光線L3以及 光線L4往特定出光角度集中，因此，依本實施例之結構設計，發光晶片22 #於法線N1方向之光線即可被有效的利用。 請參照圖4，顯示本創作一實施例之發光二極體封裝件2於γ_ζ平面之 光強度分佈圖。由圖示可知’發光晶片22所發出之光線，經第一反射面232、 第二反射面233反射以及出光面231折射後射出最強光線的方向已偏離發光 面法線Μ ’於-實施例中，最強光線與發光面法線m的爽角約為3〇至5〇 度。而發光面法線N1方向之光線，由於已反射至較大角度出光，因此發光 面法線N1方向之光強度大幅降低，舉例而言，發光面法線w方向之光強度 與其它方向中光強度最強者的比值約為〇 〇5至〇 5。In this embodiment, the line SL′ formed by the intersection of the first reflective surface 232 and the second reflective surface 233 intersects with the normal line N1 of the light-emitting surface 22a, and the groove 234 of the light-emitting chip package 2 is symmetrically disposed, that is, The first reflecting surface 232 and the second reflecting surface 233 are the same as the normal angle N1 of the light emitting surface 22a, and are about 10 to 40 degrees. It should be noted that the angle between the first reflecting surface 232 and the second reflecting surface 233 and the normal line N1 of the light emitting surface 22a may also be arranged at different angles according to different light splitting requirements. In addition, the first reflective surface 232 and the second reflective surface 233 may also be composed of a single plane or a plurality of planes different from the angle of the normal line. Referring to FIG. 3c, the ratio of the depth D1 of the trench 234 to the projection distance η of the package 23 in the direction of the normal N1 of the light surface 22a of the package 23 is preferably 0.05 to 0.83. As shown in FIG. 3c, the light ray L3 in the direction of the normal Ν1 is reflected off the first reflecting surface 232, and then deviated from the normal line N1, and then refracted through the light exiting surface 231 of the side wall, and the light ray L3 deviates from the sidewall light emitting surface 231. The direction of the normal is shot. The other light L4, which is more deviated from the normal line N1, is also reflected by the first reflecting surface 232 and deviates from the normal N1 direction, and then refracted by the front light emitting surface 231, and the light L4 deviates from the normal of the front light emitting surface 231. Shoot out. As can be seen from Fig. 3c, the light ray L3 and the light ray L4 are concentrated at a specific light exit angle. Therefore, according to the structural design of the embodiment, the light of the light-emitting chip 22# in the direction of the normal line N1 can be effectively utilized. Referring to Fig. 4, there is shown a light intensity distribution diagram of the light-emitting diode package 2 of the present embodiment in the γ_ζ plane. As shown in the figure, the light emitted by the light-emitting chip 22 is reflected by the first reflecting surface 232, the second reflecting surface 233, and the light-emitting surface 231 is refracted, and the direction in which the strongest light is emitted has deviated from the normal of the light-emitting surface. The refreshing angle of the strongest light and the normal surface m of the luminous surface is about 3 〇 to 5 〇. The light in the N1 direction of the normal surface of the light-emitting surface is reflected to a large angle, so that the light intensity in the direction of the normal line N1 of the light-emitting surface is greatly reduced. For example, the light intensity in the direction of the normal surface of the light-emitting surface and the light in other directions The ratio of the strongest is about 〇〇5 to 〇5.
請參照圖以及圖如發光晶片封裝件之出光面可依需求作各種不同的 變化。例如出光面除了如圖3a所示為部分圓柱或_柱的弧面外，亦可為球 面型之出先面23la、平面型之出光面㈣，或是孤面、球面或平面之电合。 =照圖6a至圖6e’發光晶片封料之出光面更可設置至少—擴光社 構，例麻面之出光面23刚㈣上或者平面之出光面加上找 構Γ 或是在平㈣絲231慨)上瓣㈣之微小結 請參照圖7a以及圖7b，發氺曰η 4+壯从 25。平面㈣纖心^咖23㈣―平面側壁 出先面231f、23lg，且平面側壁25之法線 M364877 垂直於發光晶片a的發光面瓜之法線。因靠近基座a側之平面側壁^可 提供光反射絲，如此即可反射較大驗的統，啸昇較大肢光線的光 利用率於Λ施例中’具有反射性的平面側壁25於發光面法線方向上的投 影距離D2與封裝體23於發絲祕方向上職影雜η _錄 μ 至 0_5 。 · - 需注意者’前述實施例是以—發光晶片職件作制。然而，前述實施 例中之封裝體外型結構亦可作為一分光裝置以應用於不同的光源。請再參照 •圖3C ’本創作一實施例之分光裝置包含一入光面235以及-出光面別。入 光面235接文-光源所發出之光線。舉例而言，光源為一發光晶片Μ，入光 面235即、轉於發光晶片22之發光面公，但不祕此若光源置換為其它 光源時’原先與基座接觸之表面皆可作為一入光面235。出光面现則設 置於入光面235的相對側，而出光面231的結構特徵如前所述，在此不再資 一^參、圖8，本創作—實施例之側光式背光歡3包含—透光板31以及 Z光晶片難件2。透光板31具有一第一入光面3ιι以及一第一出光面 於笛此實施例中’透光板31為—導光板’且第—人光面311之法線垂直 光光面之法線312。較佳者，可於第-入光面3Η之相對側設置-擴 =^3。發光_裝件2設置於透光板31之第—人光面3ιι側，發光 發光晶㈣；^、°構如一视’在此不再贅述。依側光式背光模組3之設計， 接由、之光線大部分已偏離發光面之法線Ν1方向，因此光線可直 射出、^312射出透光板31 ’或是經擴光結構313反射後再由出光面312 =31，彳㈣柳_蝴输3的綱權地提昇。 9，本創作—實施例之直下式背賴組4包含—透光板Μ以及 發棚封裝们。透光板41具有—第— 7 M364877 412，於此實施例中，透光板μ為―擴散板，且第一入光面叫之法線平行 於第一出光面之法線412。發光晶片封裝件2&、213、2£：設置於透光板41之第 -入光面411側，發光晶片封裝件的結構如前所述，在此不再資述。依直下 式月光模組4之設計’發光晶片所發出之光線大部分已偏離發光面之法線犯 方向’因此發光晶片封製件2a、2b、2c間可更有效率地進行、混光，而可縮減 混光區的長度且使亮度均勻。 . #由前述各個實施例之設計，發光面法線方向之光線經第-反射面以及 鲁第二反射面反射而偏離法線，因此，應用於側光式背光模組時可有效利用發 光面法線方向的光線，進而提昇光利用率；應用於直下式背光模組時可提昇 混光效果，進而縮減混光區長度並降低背光模組的厚度且使亮度更為均句。 以上所述僅為舉例性，而非為限制性者。任何熟悉該項技術者均可依據 上述本創狀實麵進行等效之修改，而榻離其精神與齡。故任何未脫 離本創作之精神與範嘴，而對其進行之等效修改或變更，均應包含於後附之 申請專利範圍中。 【圖示之簡單說明】 • 圖1為一習知側光式背光模組之示意圖。 •圖2為一習知發光晶片封裝件之光強度分佈圖。 1 圖3a至圖3c為本創作一實施例之發光晶片封裝件示意圖。 圖4為圖3a所示實施例之光強度分佈圖。 圖5a及圖5b為本創作另一實施例之發光晶片封襄件示意圖。 圖6a至圖6c為本創作又一實施例之發光晶片封裝件示意圖。 圖7a及圖7b為本創作再一實施例之發光晶片封裝件示意圖。 圖8為本創作—實施例之側光式背光模組示意圖。 M364877 312、412 313 4 D1 D2 Η 第一出光面 擴光結構 直下式背光模組 溝槽深度 平面側壁投影距離 封裝體投影距離 L卜L2、L3、L4、LN光線路徑Please refer to the figure and the light-emitting surface of the light-emitting chip package as required, and various changes can be made according to requirements. For example, in addition to the curved surface of the partial cylinder or the _ column as shown in FIG. 3a, the illuminating surface may be a spherical front surface 23la, a planar light emitting surface (four), or an isolated surface, a spherical surface or a plane. According to Fig. 6a to Fig. 6e', the light-emitting surface of the light-emitting wafer sealing material can be provided with at least a light-expanding structure, such as the light-emitting surface 23 of the surface of the surface of the matte surface, or the plane of the light-emitting surface plus the structure or the flat surface (four) For the tiny knot of the upper flap (4), please refer to Fig. 7a and Fig. 7b, and the hair 氺曰 4+ is strong from 25. Plane (four) fiber core ^ coffee 23 (four) - plane side wall The front surface 231f, 23lg, and the normal line M364877 of the plane side wall 25 is perpendicular to the normal of the light-emitting surface of the light-emitting chip a. Since the light-reflecting wire can be provided on the side wall of the side close to the base a side, the light-reducing wire can be reflected, and the light utilization efficiency of the large-limb light is used in the embodiment of the present invention. The projection distance D2 in the normal direction of the light emitting surface and the package body 23 in the hair secret direction are η _ recorded μ to 0_5. - - Note that the foregoing embodiment is based on a light-emitting wafer job. However, the outer package structure of the foregoing embodiment can also be applied as a light splitting device to different light sources. Referring again to FIG. 3C, the spectroscopic device of the present embodiment includes a light incident surface 235 and a light exit surface. The light surface 235 is connected to the light emitted by the light source. For example, the light source is a light-emitting chip, and the light-incident surface 235 is turned into the light-emitting surface of the light-emitting chip 22, but it is not the case that if the light source is replaced with another light source, the surface that originally contacts the base can be used as a Light into the surface 235. The light-emitting surface is now disposed on the opposite side of the light-incident surface 235, and the structural features of the light-emitting surface 231 are as described above, and are not further used herein. FIG. 8 is a side-lit backlight of the present invention. The light transmissive plate 31 and the Z-ray wafer difficult member 2 are included. The light-transmitting plate 31 has a first light-incident surface 3 ιι and a first light-emitting surface in the embodiment of the present invention. The light-transmitting plate 31 is a light guide plate and the normal light surface of the first human light surface 311 is normal. Line 312. Preferably, it is possible to set -expansion =^3 on the opposite side of the first-into-light surface 3Η. The illuminating_mounting member 2 is disposed on the side of the first human light surface 3 ιι of the light-transmitting plate 31, and the illuminating illuminating crystal (four); ^, ° is structured as one view, and will not be described herein. According to the design of the edge-lit backlight module 3, most of the light that has been connected to the light-emitting surface is deviated from the normal direction of the light-emitting surface ,1, so that the light can be directly emitted, and the light-emitting plate 31' can be reflected by the light-emitting structure 313. After that, the illuminating surface 312 = 31, 彳 (four) Liu _ 输 输 3 的 的 。 。 。 。 提升. 9. The present invention—the direct type of the backing group 4 of the embodiment includes a light transmissive panel and a hair package. The light-transmitting plate 41 has - 7 M 364877 412. In this embodiment, the light-transmitting plate μ is a diffusion plate, and the first light-incident surface is called a normal line parallel to the normal line 412 of the first light-emitting surface. The light-emitting chip package 2&, 213, 2: is disposed on the first light-incident surface 411 side of the light-transmitting plate 41, and the structure of the light-emitting chip package is as described above, and will not be described herein. According to the design of the direct-type moonlight module 4, most of the light emitted by the light-emitting chip has deviated from the normal direction of the light-emitting surface. Therefore, the light-emitting chip packages 2a, 2b, and 2c can be more efficiently and mixed. The length of the light mixing zone can be reduced and the brightness can be made uniform. According to the design of the foregoing embodiments, the light in the normal direction of the light-emitting surface is reflected off the normal line through the first-reflecting surface and the second reflecting surface, so that the light-emitting surface can be effectively utilized when applied to the edge-lit backlight module. The light in the normal direction enhances the light utilization rate; when applied to the direct type backlight module, the light mixing effect can be enhanced, thereby reducing the length of the light mixing area and reducing the thickness of the backlight module and making the brightness more uniform. The above is intended to be illustrative only and not limiting. Anyone familiar with the technology can make equivalent modifications based on the above-mentioned creations, and stay away from their spirit and age. Therefore, any changes or modifications to the spirit of this creation that are not removed from the creation should be included in the scope of the patent application attached. [Simple Description of the Drawings] • Fig. 1 is a schematic view of a conventional edge-lit backlight module. • Figure 2 is a light intensity distribution diagram of a conventional light emitting chip package. 1A to 3c are schematic views of a light emitting chip package according to an embodiment of the present invention. Figure 4 is a diagram showing the light intensity distribution of the embodiment of Figure 3a. 5a and 5b are schematic views of a light-emitting chip package according to another embodiment of the present invention. 6a-6c are schematic views of a light emitting chip package according to still another embodiment of the present invention. 7a and 7b are schematic views of a light emitting chip package according to still another embodiment of the present invention. FIG. 8 is a schematic diagram of an edge-lit backlight module of the present invention. M364877 312, 412 313 4 D1 D2 Η First light-emitting surface Light-emitting structure Direct-type backlight module Groove depth Plane sidewall projection distance Package projection distance L L L2, L3, L4, LN ray path
Ν1 SL 發光面法線 相交直線Ν1 SL luminous surface normal intersecting straight line
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