M359802 五、新型說明： 【新型所屬之技術領域】 本創作係提供一種導電性接合墊結構，尤指使用異向性導電膜 '之晶片接合墊結構。 【先前技術】 傳統連接電子產品中各種電子元件的作法通常是利用焊接方 式，其具有操作容易的優點，也具有相當程度的可靠度。然而，由 於電路7L件之間關距越來越小，傳統的焊接技術已無法滿足需 求。在某些特殊場合巾’必須另以各種具備不關途的異向性導電 材料來代替’例如’異向性導電膜(—Ο—⑽——·磨)、 /、向性導轉(amsGtropie eQnduetive aca)或異向性導電片 細__咖ductive _，Acs)這一類的異向性導電材料。 作為=電=電膜通常被應用在作為兩個薄電路板之間或者 為積體電路4與電路板之_永久辭永纽雜。 為=電被應用晶體液晶顯示器的製針，用來作 電粒：例如的:性連接。異向性導電膜的組成通常包括異向性導 電粒子，例如，銀粒子絲面鍍銀的有機微粒，1分·孰關紙 :=:rw，_向性導電== 熱壓=:==:連接基材~^^ 月曰向邊緣流動’迫使兩個待連接基材 M359802 皆能夠與異向性導電膜中的導電粒子翻。電的傳導途徑即是透過 這些與基材表面接觸到的導電粒子來完成。由於導電粒子在異向性 導電膜中是分散的，彼此間不相接觸，因此電流並不會沿著薄膜方 向橫向傳導，造成短路。 '、 • t見第1A_1D圖’第圖為習知接合晶片與基板之製程的 剖面示意圖。如S1A圖所示’提供一基板2〇，其中基板2〇可以為 籲-石夕基板、-玻璃基板或-印刷電路板(PCB)等，且基板2〇之表面 設置有接合塾22。接著’絲板2〇上設置異向性導賴3〇。異向 性導電膜30具有絕緣材料34,以及異向性導電粒子32，其中絕緣 膠材34可以是樹脂等不導電之材料，而異向性導電粒子&則散佈 於絕緣材料34中。如第1B圖所示，隨後提供一欲接合於基板2〇 之晶片10。晶片10可以為例如一1(：晶片’且晶片1〇面向基板沈 之表面設置有接合塾u。如第lc圖所示，進行晶片1〇與基板2〇 •之接合，將晶片1〇、基板2〇，以及基板2〇上所設置之異向性導電 膜3〇置於高熱高塵環境’經加壓與加熱一段時間後使絕緣膠材％ 融化’並經過重新塑形後凝固，使得晶片1〇固定於基板2〇上而形 成-接合結構4〇’此時部分異向性導電粒子瓜會被夾在晶片/ 之接口塾I2與基板2〇之接合墊Μ之間，而其餘的異向性導電粒子 32b則自由散佈在晶片1()與基板2()之間。晶片⑺與基板2〇因此 可以藉由接合塾12、異向性導電粒子瓜與接合塾22所構成的結 構作電性連接。此外，雖妙1 a α α . 此外雖然異向性導電粒子32具備垂直方向導電與 &向不導電之特質’理論上不會有鱗的情形發生，然峨著電路 4 M359802 凡件之間的間距越來越小’接合墊12與接合墊12或接合墊u與接 合墊22之間的間距（pitch)縮短，而異向性導電粒子&在受高况 高壓重新_後可能會擠壓堆成如第m _向性導電粒子HP ，示之凝集團’此異向性導電粒子娜凝集團連接水平方向相鄰之兩 .接合墊12 ’會導致兩兩水平相鄰之接合塾12產生橫向短路。 【新型内容】 • 有鑑於此，本創作係提供一種導電性接合墊結構，尤指一種具 有緩衝空間之異向性導電膜之接合墊結構。 、 八根據本創作之—目的，本創作提供-種導紐接合塾結構，包 =絲、-柱狀體核以及—柱狀體接轉，射雜狀體支架 =-上表面、與—τ表面與—側面，且該柱狀體支架之該上表面 糸連接於該基板上，且該柱狀體支架之該上表面與該柱狀體支竿之 =表面之面似職實質上相彼此互相平行。至於該柱狀體 口塾，含-上表面與—下表面，其巾雜狀體接合塾之該上 =係連胁雜狀體支架之該下表面上，且雜狀體接合塾之續 2面與雜賴接合塾之該τ絲之面概雜料幼同並彼 體ρ 上賴柱㈣接轉之該上絲大於並如於該柱狀 支加=該下絲，·雜狀難合塾之該上絲未為該柱狀體 衝:間覆盍之部分與該柱狀體支架之該側面之間形成-緩 I曰用以谷納多餘之異向性導電粒子。 M359802 含-^本創作之又—目的，本創作提供—種晶片接合墊結構，包 - ^至少―晶片、至少—第—導電性接合塾結構、至少—第 -笛接合墊結構以及—樹脂層。該第—導電性接合塾結構包含 支架以及-第-柱狀體接合塾，其中該第—柱狀體支 表面:纽—下表面與—側面，而該第—柱狀體支架之該上 表面係連接_基板上，且該第—絲體支架之虹表㈣ 柱狀體支架之該下絲之面積及形狀實質上_並彼此私時行。M359802 V. New Description: [New Technology Field] This creation provides a conductive bond pad structure, especially a wafer bond pad structure using an anisotropic conductive film. [Prior Art] Conventionally, various electronic components in an electronic product are generally manufactured by using a welding method which has an advantage of easy operation and a considerable degree of reliability. However, due to the smaller and smaller distance between the components of the circuit 7L, conventional welding techniques have been unable to meet the demand. In some special occasions, the towel must be replaced by a variety of anisotropic conductive materials that are not suitable. For example, an anisotropic conductive film (—Ο—(10)——·磨), /, a directional conduction (amsGtropie) eQnduetive aca) or anisotropic conductive sheet fine __ coffee ductive _, Acs) anisotropic conductive material. As = electric = electric film is usually applied between two thin circuit boards or as an integrated circuit 4 and a circuit board. The needle is used for the liquid crystal display, which is used for electro-grain: for example: sexual connection. The composition of the anisotropic conductive film usually includes anisotropic conductive particles, for example, silver particles coated with silver particles, 1 minute, 孰 纸 paper: =: rw, _ directional conduction == hot pressing =: == : Connecting the substrate ~^^ The flow of the moon to the edge 'forces both substrates M359802 to be connected to the conductive particles in the anisotropic conductive film. The electrical conduction path is accomplished by these conductive particles that are in contact with the surface of the substrate. Since the conductive particles are dispersed in the anisotropic conductive film and do not contact each other, the current does not conduct laterally in the film direction, causing a short circuit. ', • see Figure 1A_1D'. The figure is a schematic cross-sectional view of a conventional process for bonding a wafer to a substrate. A substrate 2 is provided as shown in Fig. 1A, wherein the substrate 2 can be a substrate, a glass substrate or a printed circuit board (PCB), and the surface of the substrate 2 is provided with a bonding pad 22. Next, an anisotropic guide is placed on the silk plate 2〇. The anisotropic conductive film 30 has an insulating material 34, and an anisotropic conductive particle 32, wherein the insulating paste 34 may be a non-conductive material such as a resin, and the anisotropic conductive particles & are dispersed in the insulating material 34. As shown in Fig. 1B, a wafer 10 to be bonded to the substrate 2 is then provided. The wafer 10 may be, for example, a 1 ': wafer ' and a surface of the wafer 1 facing the substrate 26 is provided with a bonding layer u. As shown in FIG. 1c, bonding of the wafer 1 and the substrate 2 is performed, and the wafer 1 is folded, The substrate 2〇, and the anisotropic conductive film 3 disposed on the substrate 2〇 are placed in a high-heat and high-dust environment, and the insulating rubber material is melted after being pressurized and heated for a period of time, and is solidified after reshaping, so that The wafer 1 is fixed on the substrate 2 to form a bonding structure 4'. At this time, the partially anisotropic conductive particles are sandwiched between the interface 塾I2 of the wafer/substrate and the bonding pad of the substrate 2, and the rest The anisotropic conductive particles 32b are freely interspersed between the wafer 1 () and the substrate 2 (). The wafer (7) and the substrate 2 can be formed by bonding the crucible 12, the anisotropic conductive particles, and the bonding crucible 22. In addition, although it is 1 a α α. In addition, although the anisotropic conductive particles 32 have a vertical direction of conduction and & the non-conducting trait 'there is no theoretical scale, then the circuit 4 M359802 The spacing between parts is getting smaller and smaller 'bonding pad 12 and joint 12 or the pitch between the bonding pad u and the bonding pad 22 is shortened, and the anisotropic conductive particles & may be squeezed into the m-directional conductive particles HP after being subjected to the high-state high voltage. The condensed group 'this anisotropic conductive particle Na Ning Group is connected to the two adjacent horizontal directions. The bonding pad 12' will cause a lateral short circuit between the two adjacent horizontally adjacent 塾12. [New content] • In view of this, The present invention provides a conductive bond pad structure, especially a bond pad structure of an anisotropic conductive film having a buffer space. VIII. According to the purpose of the present creation, the present invention provides a guide bond structure, package = a wire, a columnar core, and a columnar body, the hybrid body support=-upper surface, and the -τ surface and the side surface, and the upper surface of the columnar body bracket is connected to the substrate, And the upper surface of the columnar support and the surface of the column support are substantially parallel to each other. As for the columnar body, the upper surface and the lower surface are covered by the towel. The upper part of the heterozygous iliac crest is the next On the surface, the surface of the entangled surface of the entangled enthalpy of the hybrid body is the same as that of the surface of the tying wire of the hybrid enthalpy, and the surface of the argon wire is entangled with the stalk. The addition of the wire = the lower wire, the miscellaneous shape of the wire is not for the columnar body: the portion between the intermediate layer and the side of the columnar frame is formed - a slow I 曰Excessive anisotropic conductive particles. M359802 contains -^ the purpose of this creation - the purpose of this creation provides a wafer bond pad structure, package - ^ at least - wafer, at least - the first conductive joint structure, at least - the first a splicing pad structure and a resin layer. The first conductive joint structure comprises a bracket and a - columnar body joint, wherein the first columnar surface: a neon-lower surface and a side surface, and the The upper surface of the columnar support is attached to the substrate, and the area and shape of the lower wire of the rainbow-shaped (4) columnar support of the first-wire support are substantially _ and privately.
至於該第-柱狀體接合制包含—上表面與—下表面，其中該第— 柱狀體接合塾之該上表面係連接於該第—柱狀體支架之該下表^ 且°亥第柱狀體接合墊之該上表面與該第一柱狀體接合塾之該 下表面之面積及形狀實質上相同並彼此互相平行，此外，該第一柱 狀體接合紅虹表面大於並如_第—錄體絲之該下表 面，藉此該第-柱狀體接合墊之該上表面未為該第一柱狀體支架之 該下表面賴之部分與該第—餘體支架之該之間形成一第一 緩衝空間。而該第二導電性接合塾結構包含—第二柱狀體支架以及 -第二柱狀體接合墊’其中該第二桂狀體支架包含一上表面、一下 表面與側面’且該第二柱狀體支架之該上表面係連接於該晶片 上’該第二柱狀體支架之該上表面與該第二柱狀體支架之該下表面 之面積及雜實質上_並彼此互相平行。同樣地，該第二柱狀體 接合塾亦包含—上表面與—下表面，其巾該第二柱㈣接合塾之該 上表面係連接於·二柱狀體支架之該下表面上，且該第二柱狀體 接合塾之社絲_帛二錄_合私該下表面之面積及形狀 實質上_並彼此雜平行，糾，鱗二柱狀體接合墊之該上表 Η M359802 面大於並如魏第二柱㈣支架找下表面，藉此鄉二柱狀體 接合塾之虹表絲_帛二減社紅訂表城蓋之部分鱼 =弟^狀體核之該側面之間形成—第二緩衝空間。該樹脂層則 用^接5該基板與該晶片，賴脂層包含複數個導電粒子，其中部 分該等導餘子餘_第—柱狀社架之該下表面触第^柱^ 體支架之該下表面之間，藉此使該第—導電性接合墊結構與該第二 導電性接合㈣構雜連接，而部分料錄子 衝空間與該第二緩衝空間内。 怖、亥弟緩 本創作係提供一種導電性接合塾結構及一種晶片連接塾結構， 以解決先前技術中兩個水平相鄰接合墊之間導電粒子凝集在一起而 造成之短路情形。 【實施方式】 在說明書及後續的申請專利範圍當中使用了某些詞彙來指稱特 定的元件。所屬倾巾具有通常知識者應可理解，製造商可能會用 不同的名詞來稱呼同樣的元件。本說明書及後續的申請專利範圍並 不X名稱的差異來作為區別元件的方式，而是以元件在功能上的差 異來作為區別的基準。在通篇說明書及後續的請求項當中所提及的 「包含」係為一開放式的用語，故應解釋成「包含但不限定於」。此 外電性連接」一同在此係包含任何直接及間接的電氣連接手段。 因此，若文中描述一第一裝置電性連接於一第二裝置，則代表該第 一裝置可直接連接於該第二裝置，或透過其他裝置或連接手段間接 M359802 地連接至該第二裝置。 請參考第2圖與第3圖，第2圖為本創作較佳實施例之晶片接 合墊結構的俯視示意圖，而第3圖為本創作較佳實施例之晶片接合 '墊結構剖面示意圖，亦即沿著第2圖中A-A’截線的剖面示意圖。如 .第2圖與第3圖所示，本創作係提供一晶片接合墊結構，可用於連 接兩個需要電性連接之物，例如本較佳實施例中之晶片接合墊結構 眷400’用以電性連接一晶片1〇〇與一基板2〇〇,而晶片接合塾結構彻 可屬於玻璃覆晶式/玻璃上晶片（Chip on Glass，COG)，但不限於此， 亦可以應用於例如玻璃覆膜式/玻璃上薄膜(Film 〇n Glass，F〇G)或是 印刷電路板覆膜式/印刷電路板上薄膜(Fihn on Printed Circuit Board， FOB)等。 晶片接合墊結構400包含至少一晶片100、一基板2〇〇、至少一 導電性接合墊結構組500，以及一樹脂層340，其中各導電性接合塾 鲁結構組500包含一第一導電性接合墊結構12〇，以及一與第一導電 性接合墊結構120對應的第二導電性接合墊結構22〇，其結構詳述 如下。 第一導電性接合墊結構120包含一第一柱狀體支架14〇以及一 第一柱狀體接合墊160,且第一柱狀體支架14()包含一上表面142、 —下表面144與一側面146，同樣地，第一柱狀體接合墊16〇包含 —上表面162與一下表面164。 M359802 第-柱狀體支架140之上表面142係連接於基板上 =艮，而第—柱狀體接合塾160之上表面162係連接於第-柱 體支請之下表⑽上。上、下表面142、144在此係就其相 疋義’非絕對的位置。值得注意的是，第-柱狀體支架140 下表面142、144之面積及形狀實質上相同並彼此互相平行， 兩者的形狀可以為各種矩形、多角形或是_，而由於第一柱狀體 支木14(M系連接上、下表面142、144之長形柱狀結構，其會依上、 下表面142、144之形狀，而可以選擇性的為—多脉體或圓柱體， 但也不以此為限。例如，第一柱狀體支架刚可以選擇性的是一般 正統柱狀體或是-以柱狀體為基礎的_構造。與第—柱狀體支架 140類似’第—柱狀體接合墊1⑻之上、下表祕2、164不論面積 及形狀’都實質上相同紅兩兩互相平行，兩者的形狀亦可以為各 種矩形、多角形或是圓形。而由於第一柱狀體接合墊_係一連接 上、下表面162、164之長形柱狀結構，會依照上、下表面162、164 之形狀，成為一多角柱體或圓柱體，但也不以此為限。 值得注意的是，本創作較佳實施例中，第一柱狀體支架14〇之 下表面144係對應於第一柱狀體接合墊16〇之上表面162之中心， 且第一柱狀體接合墊160之上表面162大於並突出於第一柱狀體支 架H0之下表面144，藉此第一柱狀體接合墊16〇之上表面162未 殳到第一柱狀體支架140之下表面144所覆蓋之部分與第一柱狀體 支架140之側面146之間形成一第一緩衝空間18〇。此第一緩衝空 Νί359802 間180較佳為位於兩相垂直之第一柱狀體支架14〇之側面146與第 一柱狀體接合墊160之上表面162之間。 由於第一柱狀體接合墊160之上表面162大於並突出於第一柱 狀體支架Μ0之下表面144 ’因此，若將寬度定義為第一柱狀體支 架140任意部位垂直方向截面積中穿過中心點之最寬部份距離，第 一柱狀體支架140之寬度須小於該第一柱狀體接合塾之寬度。 •此外，第一柱狀體支架140之高度須大於第一柱狀體接合墊160之 尚度，如此一來方能形成較佳第一緩衝空間18〇。在本創作較佳實 施例中，第一柱狀體支架140之高度與第一柱狀體接合墊16〇之高 度之比實質上介於1與10之間。而第一柱狀體支架14〇之寬度與第 柱狀體接合墊160之寬度之比實質上介於〇 5與〇 925之間，然而 第一柱狀體支架140與第一柱狀體接合墊16〇兩者間高度之比與寬 度之比皆不限於此。 • 帛二導電性接合整結構22〇與第-導電性接合塾結構⑽近 似’亦包含-柱大體支架、一柱狀體接合塾，分別為第二柱狀體支 架240與第二柱狀體接合墊。第二柱狀體支架亦包含一上 表面242、T表面244與-側面246,而第二柱狀體接合墊26〇 則包含-上表面262與-下表面264。第二柱狀體接合塾係透 過第二柱狀體支架240之上表面242係連接於晶片觸上，而第二 柱狀體接合墊260之上表面262係連接於第二柱狀體支架之下 表面244上。 10 M359802 /、第‘電性接合墊結構12〇類似，第二柱狀體支架24〇之上、 下表面242、244以及第二柱狀體接合塾260之上、下表面262、264, 實質上各為相同之面積及形狀，並各為彼此互相平行之平面，形狀 亦可以為各種矩形、多角形或是圓形。而由於第二柱狀體接合塾· ‘同樣係—連接上、下表面262、264之長形柱狀結構，因此也會依照 上、下表面262、264之形狀，成為一多角柱體或圓柱體。此外，第 •二柱狀體支架240之下表面244亦對應於第二柱狀體接合墊26〇之 上表面262之中心。基於第二柱狀體接合墊260之上表面262大於 並突出於第二柱狀體支架24〇之下表面施之因素，第二柱狀體接 合墊260之上表面262中未受到第二柱狀體支架24〇之下表面244 覆蓋之部分，即能與其相垂直之第二柱狀體支架24〇之側面246構 成一第二緩衝空間280。 此外，為了形成較佳第二緩衝空間280，與第一導電性接合墊 、’、口構120相似’在第一導電性接合塾結構220中第二柱狀體支架240 之寬度須小於該第二柱狀體接合墊260之寬度，且第二柱狀體支架 240之高度也須大於第二柱狀體接合墊26〇之高度，而本創作較佳 •實施例中，第二柱狀體支架240之高度與第二柱狀體接合墊26〇之 -咼度之比介於1與40〇之間，而第二柱狀體支架240之寬度與第二 柱狀體接合墊260之寬度之比介於〇.5與0.925之間，然而第二柱狀 體支架240與第二柱狀體接合墊260兩者間高度之比與寬度之比皆 不限於此。值得注意的是，第二柱狀體支架24〇與第二柱狀體接合 M359802 墊:兩者嘯之_上狀輪第—咖加4 一=體接合塾160兩相高度之比，也就是說上述兩種高度^比 可以為相同或不同數值。除此之外，本 1/1Λ 一 ώ 本11作較佳實施例中第一柱狀 體支.140之南度須小於第二柱狀體支架24〇之高度。 •第-導電性接合塾結構m與第二導電性接合墊結構22〇在本 實施例中屬於構造形狀近似但不相同的一對導電性接合塾結構組 5〇〇 ’但不限於此，亦可以為兩兩相同之導電性結構，例如連接晶片 1〇二與基板2G0的可以都是第—導電性接合塾結構m或兩個基材 都是由第二導電性接合塾結構22〇所連接之一對導電性接合塾結構 組500。同樣的，第一導電性接合墊結構12〇可以連接於晶片觸 或其他需要電性連接至相異物質之基材上，第二導電性接合塾結構 220也可以連接於基板朋或其他基材上。導電性接合墊結構組· 中不論第一導電性接合墊結構120或第二導電性接合墊結構22〇皆 可以由相同或不同導電的物體構成第一柱狀體支架14〇、第一柱狀 體接合塾160、第二她體錢24(m及第二柱_接合墊，例 如銅等金屬或其他金屬以及任何導電之混合物。 由於樹月曰具有遇面溫高屋炼化並能重新塑形的特質，其係為連 接、緩衝兩待連接基材常運用的膠材，而前述之樹脂層34〇於本創 作較佳實施例中則用以接合基板2〇〇與晶片1〇〇，樹脂層34〇中包 含複數個導電粒子320，其中部分導電粒子320a經過重新塑形後， 係位於第一柱狀體支架14〇之下表面144與第二柱狀體支架2仞之 12 M359802The first columnar body comprises a top surface and a lower surface, wherein the upper surface of the first columnar joint is connected to the lower surface of the first column holder ^ and The upper surface of the columnar bonding pad and the lower surface of the first column are substantially the same in area and shape and are parallel to each other. Further, the first column body is joined to the red rainbow surface and is larger than a second surface of the first recording body, wherein the upper surface of the first columnar bonding pad is not the portion of the lower surface of the first column holder and the first body bracket A first buffer space is formed. The second conductive joint structure comprises a second column support and a second column bond pad, wherein the second body support comprises an upper surface, a lower surface and a side surface, and the second column The upper surface of the body holder is attached to the wafer. The area of the upper surface of the second column holder and the lower surface of the second column holder are substantially parallel to each other. Similarly, the second columnar engagement jaw also includes an upper surface and a lower surface, the upper surface of the second column (four) engaging jaw being attached to the lower surface of the second columnar support, and The second columnar body is joined to the scorpion 帛 帛 录 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ And if Wei second column (four) bracket finds the surface, the township two columnar body joins the 表 虹 虹 帛 帛 帛 减 减 红 红 红 红 红 红 红 部分 部分 部分 部分 部分 部分 部分 部分 部分 = = = = - second buffer space. The resin layer is connected to the substrate and the wafer, and the lyophilized layer comprises a plurality of conductive particles, wherein a portion of the conductive sub-segment-the columnar social frame touches the lower surface of the column Between the lower surfaces, the first conductive bond pad structure is connected to the second conductive bond (4), and a portion of the material is punched into the second buffer space. The creation system provides a conductive joint structure and a wafer joint structure to solve the short circuit caused by the agglomeration of conductive particles between two horizontal adjacent joint pads in the prior art. [Embodiment] Certain terms are used throughout the specification and subsequent claims to refer to a particular element. It should be understood by those of ordinary knowledge that the manufacturer may use different nouns to refer to the same component. The scope of this specification and the subsequent patent application does not differ from the X name as a means of distinguishing components, but as a basis for distinction in terms of functional differences of components. The term "including" as used throughout the specification and subsequent claims is an open term and should be interpreted as "including but not limited to". This external electrical connection together includes any direct and indirect electrical connection means. Therefore, if a first device is electrically connected to a second device, it means that the first device can be directly connected to the second device, or indirectly connected to the second device through other devices or connection means. Please refer to FIG. 2 and FIG. 3 , FIG. 2 is a schematic top view of the wafer bonding pad structure of the preferred embodiment, and FIG. 3 is a schematic cross-sectional view of the wafer bonding pad structure of the preferred embodiment. That is, a schematic cross-sectional view taken along line A-A' in Fig. 2 . As shown in FIG. 2 and FIG. 3, the present invention provides a die bond pad structure for connecting two devices that need to be electrically connected, such as the die bond pad structure 眷 400' in the preferred embodiment. The wafer 1 is electrically connected to a substrate 2, and the wafer bonding structure can be a glass-on-glass (Chip on Glass, COG) chip, but is not limited thereto, and can be applied to, for example, Glass film/Film on film (F〇G) or printed circuit board film/Fihn on Printed Circuit Board (FOB). The wafer bond pad structure 400 includes at least one wafer 100, a substrate 2, at least one conductive bond structure group 500, and a resin layer 340, wherein each of the conductive bonding structure 500 includes a first conductive bond The pad structure 12A and a second conductive bond pad structure 22 corresponding to the first conductive pad structure 120 are detailed in the following. The first conductive bond pad structure 120 includes a first columnar body frame 14A and a first columnar body bond pad 160, and the first columnar body frame 14() includes an upper surface 142, a lower surface 144 and One side 146, likewise, the first cylindrical bond pad 16A includes an upper surface 162 and a lower surface 164. M359802 The upper surface 142 of the first columnar support 140 is connected to the substrate = 艮, and the upper surface 162 of the first columnar engagement 塾 160 is connected to the table (10) below the first column. The upper and lower surfaces 142, 144 are here in a non-absolute position. It should be noted that the area and shape of the lower surfaces 142, 144 of the first columnar support 140 are substantially the same and parallel to each other, and the shapes of the two may be various rectangles, polygons or _, and due to the first column shape The body branch 14 (the M system is connected to the elongated columnar structure of the upper and lower surfaces 142, 144, which may be in the shape of the upper and lower surfaces 142, 144, and may alternatively be a multi-pulse or a cylinder, but It is not limited to this. For example, the first columnar support can be selected as a general orthodontic column or a columnar based structure. Similar to the first columnar support 140. - Above the columnar bonding pad 1 (8), the table 2, 164, regardless of the area and shape 'is substantially the same, the two are parallel to each other, and the shapes of the two may be various rectangles, polygons or circles. The first columnar bonding pad _ is an elongated columnar structure connecting the upper and lower surfaces 162, 164, and becomes a polygonal cylinder or cylinder according to the shape of the upper and lower surfaces 162, 164, but not This is a limitation. It is worth noting that in the preferred embodiment of the present invention, the first column is The lower surface 144 of the bracket 14 对应 corresponds to the center of the upper surface 162 of the first column bonding pad 16 , and the upper surface 162 of the first column bonding pad 160 is larger than and protrudes from the first column holder H0 . The lower surface 144, whereby the upper surface 162 of the first column bonding pad 16 is not folded to the portion covered by the lower surface 144 of the first column holder 140 and the side 146 of the first column holder 140 A first buffer space 18 形成 is formed. The first buffer space 359 359 802 is preferably located at the side 146 of the first columnar bracket 14 垂直 perpendicular to the two phases and the upper surface 162 of the first column bonding pad 160 . Since the upper surface 162 of the first columnar bonding pad 160 is larger than and protrudes from the lower surface 144 of the first column holder Μ0, the width is defined as the vertical direction of any part of the first column holder 140. The width of the first columnar support 140 must be less than the width of the first columnar engagement jaw in the cross-sectional area through the widest portion of the center point. • In addition, the height of the first column support 140 must be greater than The degree of the first columnar joint pad 160, so that the shape can be shaped Preferably, the first buffer space 18 is. In the preferred embodiment of the present invention, the ratio of the height of the first column holder 140 to the height of the first column spacer 16 is substantially between 1 and 10. The ratio of the width of the first columnar support 14〇 to the width of the columnar bond pad 160 is substantially between 〇5 and 〇925, however, the first column support 140 and the first column body The ratio of the height to the width of the bonding pad 16 皆 is not limited to this. • The second conductive bonding structure 22 近似 is similar to the first conductive bonding structure ( 10 ) and includes a column-shaped bracket and a column. The body engaging jaws are the second columnar body holder 240 and the second columnar body bonding pad, respectively. The second cylindrical support also includes an upper surface 242, a T surface 244 and a side surface 246, and the second cylindrical bond pad 26A includes an upper surface 262 and a lower surface 264. The second columnar engagement raft is connected to the wafer contact through the upper surface 242 of the second column support 240, and the upper surface 262 of the second column bond pad 260 is coupled to the second column support. On the lower surface 244. 10 M359802 /, the 'electrical bond pad structure 12 〇 similar, the second columnar body 24 〇 above, the lower surface 242, 244 and the second column body 塾 260 above, the lower surface 262, 264, the essence Each of the above is the same area and shape, and each is a plane parallel to each other, and the shape can also be various rectangles, polygons or circles. Since the second columnar body is joined with the long columnar structure connecting the upper and lower surfaces 262 and 264, it also becomes a polygonal cylinder or cylinder according to the shape of the upper and lower surfaces 262 and 264. body. In addition, the lower surface 244 of the second columnar support 240 also corresponds to the center of the upper surface 262 of the second columnar bond pad 26〇. Based on the upper surface 262 of the second columnar bond pad 260 being larger than and protruding from the lower surface of the second column support 24, the second column of the second column bond pad 260 is not subjected to the second column. The portion 244 covered by the lower surface 244 of the body support 24, that is, the side 246 of the second column support 24 垂直 perpendicular thereto, constitutes a second buffer space 280. In addition, in order to form a preferred second buffer space 280, similar to the first conductive bond pad, ', the mouth structure 120', the width of the second columnar support 240 in the first conductive joint structure 220 must be smaller than the first The width of the second column bonding pad 260, and the height of the second column spacer 240 must also be greater than the height of the second column bonding pad 26, and the second column is preferably used in the present embodiment. The ratio of the height of the bracket 240 to the second column bonding pad 26 is between 1 and 40, and the width of the second column holder 240 and the width of the second column bonding pad 260. The ratio is between 〇.5 and 0.925, however, the ratio of the height to the width of the second column spacer 240 and the second column bonding pad 260 is not limited thereto. It is worth noting that the second columnar bracket 24〇 and the second column body are engaged with the M359802 pad: the ratio of the two phases of the two sides of the whirlpool _ _ _ _ _ _ _ 160 It can be said that the above two height ratios can be the same or different values. In addition, the south of the first columnar branch 140 of the preferred embodiment of the present invention must be smaller than the height of the second columnar bracket 24〇. The first conductive bonding structure m and the second conductive bonding structure 22 are similar to the structural shape but different from each other in the present embodiment, but are not limited thereto. The two or two identical conductive structures, for example, the connection wafer 1 and the substrate 2G0 may both be the first conductive joint structure m or both substrates are connected by the second conductive joint structure 22 One pair of electrically conductive bonded structure groups 500. Similarly, the first conductive bond pad structure 12 can be connected to a wafer contact or other substrate that needs to be electrically connected to the dissimilar material, and the second conductive bond structure 220 can also be connected to the substrate or other substrate. on. The conductive bond pad structure group may be composed of the same or different conductive objects, the first columnar body frame 14 〇, the first column shape, whether the first conductive pad structure 120 or the second conductive pad structure 22 中Body joint 塾160, second body money 24 (m and second column _ bonding pad, such as copper or other metals or other metals and any conductive mixture. Because the tree moon 曰 has a high surface temperature and can reshape The trait is a glue material commonly used for connecting and buffering two substrates to be joined, and the foregoing resin layer 34 is used to bond the substrate 2 and the wafer 1 〇〇 in the preferred embodiment of the present invention. The layer 34A includes a plurality of conductive particles 320, wherein a portion of the conductive particles 320a are reshaped and are located on the lower surface 144 of the first column holder 14 and the second column holder 2 12 M359802
下表面244之間’藉此使第一導電性接合塾結構i2〇與第二導電性 接合塾結獅能透過導電粒子_列如本創作較佳實施例中之里 向性導電粒子作電性連接。而其餘部分導電粒子32〇b則分佈於第I =空_與第二緩衝空_内，並因為本創作較佳實施例中 k供之導電性接合塾結構組則獲得較寬闊之緩衝空間。 本創作較佳纽狀變㈣請參考第4圖，第4圖為本 創作較佳實施例之晶片接合塾結構變化型的剖面示意圖。本創作較 佳實施例之變㈣之構造與本創作較佳實關—樣者，其標 唬沿用第3圖之標號。前述提及第一柱狀體支架140可以選擇性 的包含-内削的構造’同樣地第二柱狀體支架亦可以為一内削 2狀體。本創作㈣實施例之變化型中，第—錄體支架⑽ /、弟一柱狀體支架240之内削構造，分別為一凹陷部148盘一凹陷 部f。當上、下表面142、144 _大於第一柱狀體支架140中間 任忍-垂直方向截面之面積時，可以增加第一緩衝空間⑽的體 ，，同樣地，當上、下表面242、244面積大於第二柱狀體支架· 間任思-垂直方向截面之面積時，也會增加第二緩衝空間的 體積。本創作較佳實施例中，凹陷部⑽、可以同時存在於導電 f生接合塾結構组5〇时的第—枉狀體支架_與第二柱狀體支架 亦可以&擇性的於導電性接合塾結構組中僅擇第一柱狀體 支架⑽或第二柱狀體支架24q之—作内削的設計。 闊之緩衝空 本創作係提供-種導電性接合塾結構，藉由較寬 M359802 間’以解決先射兩财平相鄰接合墊之㈣練子凝集在 起，影響兩水平相鄰之接合墊而造成之短路情形。 卩上所述僅為本創作之較佳實施例，凡依本創作申請專利範圍 所做之均義倾修飾，皆應屬本解之涵蓋範圍。 【圖式簡單說明】 鲁第1A-1D圖為習知接合晶片與基板之製程的剖面示意圖。 第2圖為本創作較佳實關之晶片接合墊結構的俯視示意圖。 第3圖為本創作較佳實施例之晶片接合墊結構的剖面示意圖。 第4圖為本創作較佳實施例之晶片接合墊結構變化型的剖面示意 圖。 、 【主要元件符號說明】 1〇晶片 12、22 接合墊 20基板 30 異向性導電膜 32、32a、32b 異向性導電粒子 34絕緣膠材 40 接合結構 100晶片 200 基板 400晶片接合塾結構 500 導電性接合墊結構組 120第一導電性接合墊結構 220 第二導電性接合墊結構 140第一柱狀體支架 160 第一柱狀體接合墊 142、162、242、262 上表面 14 M359802 144、164、244、264 146、246 148、248 180第一緩衝空間 240 260第二柱狀體接合墊 280 320、320a、320b 340樹脂層 下表面 側面 凹陷部 第二柱狀體支架 第二緩衝空間 導電粒子Between the lower surface 244 ' thereby causing the first conductive bonding structure i2 〇 and the second conductive bonding 塾 lion to pass through the conductive particles _ column as the conductive conductive particles in the preferred embodiment of the present invention for electrical connection. The remaining portion of the conductive particles 32 〇 b are distributed in the first = empty _ and the second buffer _, and a wider buffer space is obtained because of the conductive bonded 塾 structure group provided by k in the preferred embodiment of the present invention. For the purpose of this creation, please refer to FIG. 4, which is a cross-sectional view showing a variation of the wafer bonding structure of the preferred embodiment. The construction of the preferred embodiment of the present invention (4) is better than the creation of the present invention, and the label of the third embodiment is used. As mentioned above, the first columnar support 140 may optionally comprise an inner-cut configuration. Similarly, the second columnar support may also be an inner-cut body. In the variation of the fourth embodiment of the present invention, the internal cutting structure of the first recording body holder (10)/the young columnar body holder 240 is a concave portion 148 and a concave portion f. When the upper and lower surfaces 142, 144_ are larger than the area of the forbearing-vertical cross section of the first column support 140, the body of the first buffer space (10) may be increased, and similarly, when the upper and lower surfaces 242, 244 are When the area is larger than the area of the second columnar support and the cross-section of the vertical direction, the volume of the second buffer space is also increased. In the preferred embodiment of the present invention, the depressed portion (10), the first-shaped body support _ and the second cylindrical support that can exist simultaneously in the conductive f-joint 塾 structure group 5 亦 can also be selectively conductive In the sexual joint structure group, only the first columnar support (10) or the second columnar support 24q is selected for internal cutting. The wide-buffered space-based creation department provides a kind of conductive joint structure, which is used to solve the problem of two horizontally adjacent joint pads by widening the M359802's to solve the problem of the first joint of the two joints. And the short circuit caused. The above description is only the preferred embodiment of the present invention, and all modifications made in accordance with the scope of the patent application of this creation should be covered by this solution. BRIEF DESCRIPTION OF THE DRAWINGS Lu Di 1A-1D is a schematic cross-sectional view of a conventional process for bonding a wafer to a substrate. Figure 2 is a top plan view of a wafer bond pad structure that is preferably implemented. Figure 3 is a cross-sectional view showing the structure of the wafer bonding pad of the preferred embodiment of the present invention. Fig. 4 is a cross-sectional view showing a variation of the structure of the die bond pad of the preferred embodiment of the present invention. [Main component symbol description] 1 wafer 12, 22 bonding pad 20 substrate 30 anisotropic conductive film 32, 32a, 32b anisotropic conductive particles 34 insulating rubber 40 bonding structure 100 wafer 200 substrate 400 wafer bonding structure 500 Conductive bond pad structure set 120 first conductive bond pad structure 220 second conductive bond pad structure 140 first columnar body support 160 first columnar bond pad 142, 162, 242, 262 upper surface 14 M359802 144, 164, 244, 264 146, 246 148, 248 180 first buffer space 240 260 second columnar bonding pad 280 320, 320a, 320b 340 resin layer lower surface side recessed portion second columnar body bracket second buffer space conductive particle
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