TWM339153U - DC output circuit with current detecting device - Google Patents

DC output circuit with current detecting device Download PDF

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Publication number
TWM339153U
TWM339153U TW96218246U TW96218246U TWM339153U TW M339153 U TWM339153 U TW M339153U TW 96218246 U TW96218246 U TW 96218246U TW 96218246 U TW96218246 U TW 96218246U TW M339153 U TWM339153 U TW M339153U
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Taiwan
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current
coupled
detecting
transistor
output
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TW96218246U
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Chinese (zh)
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Ding-Hui Chen
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Niko Semiconductor Co Ltd
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Priority to TW96218246U priority Critical patent/TWM339153U/en
Publication of TWM339153U publication Critical patent/TWM339153U/en

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M339153 严)·2; 八、新型說明: L——— 【新型所屬之技術領域】 本創作係有關於一種電流偵測裝置,尤指一種可應用 於直流輸出電路的電流偵測裝置。 【先前技術】 迴授控制系統藉由偵測輸出的電壓或電流狀態的迴 ' 授,得以控制輸出電壓或輸出電流穩定於一預定值。電壓 ® 迴授控制一般藉由一分壓器並聯負載,將負載的跨壓狀態 迴授至控制器,使控制器藉此控制輸出至負載的電力而達 到穩定輸出電壓的目的。而電流迴授控制一般則藉由一電 阻串聯負載,將流經負載的電流狀態迴授至控制器,使控 , 制器藉此控制輸出至負載的電力而達到穩定輸出電流的目 的。 上述的輸出電壓或輸出電流的偵測,均會造成部分的 φ 能量損耗。尤其是電流偵測,由於為了避免雜訊之干擾造 . 成迴授控制的不穩定,電流偵測電阻上的跨壓無法無限制 地縮小,一般約在0.5-0.8伏特。然而,面對低電壓驅動的 發光二極體,電流偵測所造成的效率下降,一般在3%左 右,高者甚至可達5%以上。這樣的高功率消耗顯然已不 符合目前能源費用高漲下環保意識的主流價值。 參考第一圖,為先前技術中常見的發光二極體驅動電 路。如第一圖所示,發光二極體驅動電路包含一發光二極 體模組10、一電流平衡電路20、一電流偵測電阻30、一 9ΐΜ33 腦 ^ r ^ ^-^1· 1 年月曰 夢fM339153 严)·2; VIII. New Description: L——— [New Technology Field] This creation is about a current detecting device, especially a current detecting device that can be applied to a DC output circuit. [Prior Art] The feedback control system controls the output voltage or the output current to stabilize at a predetermined value by detecting the output voltage or current state. Voltage ® feedback control is generally performed by a voltage divider parallel load, which returns the voltage across the load to the controller, so that the controller can control the power output to the load to achieve a stable output voltage. The current feedback control generally returns the current state flowing through the load to the controller through a resistor series load, so that the controller controls the power output to the load to achieve the purpose of stabilizing the output current. The above detection of output voltage or output current will cause partial φ energy loss. In particular, current detection, because of the instability of the feedback control in order to avoid the interference of noise, the voltage across the current detection resistor cannot be reduced indefinitely, generally about 0.5-0.8 volts. However, in the face of low-voltage-driven LEDs, the efficiency caused by current detection is reduced, generally around 3%, and even higher than 5%. Such high power consumption is obviously not in line with the mainstream value of environmental awareness under the current high energy costs. Referring to the first figure, a light-emitting diode driving circuit which is common in the prior art. As shown in the first figure, the LED driving circuit comprises a light emitting diode module 10, a current balancing circuit 20, a current detecting resistor 30, and a 9ΐΜ33 brain ^ r ^ ^-^1·1 year Nightmare f

一憂(PWM)控制裔40以及一升屢轉換電路5〇。發 光二極體模組10包含多串並聯的發光二極體組,透過電流 平衡電路20之調控使每個發光二極體組流經約略相同的 電流而發出約略相同的亮度。電流平衡電路Μ包含多個 NMOS電晶體’每個NM〇s電晶體的源極及閘極彼此連 接,其中:剛〇S電晶體(圖中最左側)的間極及没極連 接二以構成—電流鏡。電流偵測電阻3 Q偵測流經發光二極 體模組1G的電流值,並轉換成-電壓訊號Vr輸出至PWM t制裔40。PWM控制器40 _接於—‘轉電壓VDD及接 地,亚輸出-控制訊號以調控升壓轉換電路%的輸出電力 大小其中5亥控制訊號的脈波寬度係根據電壓訊號%而調 整。升壓轉換電路5 〇係根據P WM控制器的控制訊號,將 -直流輸人電壓Vin的電力轉換成—直流輸出電麗偏, 以驅動發光二極體模組10。 如上述說明,電流偵測電a 30會造成一電壓壓降Vr, 而電流平衡電路20中的M0S電晶體亦會造成導通壓降。 明顯地,這樣電路架構τ ’功率轉換效率並不高。而且, 發光二極體驅動電路除了第一圖中的升壓轉換電路外,亦 有負輸出電壓之轉換電路等’以配合不同應用。為能處理 各種不同的應用電路的_訊號,ρ鹽控制器4()的:D j和接地端之一必須連接到輸出電壓,而造成控制 裔有咼耐壓能力,增加PW1V[控制器的成本。 【新型内容】 M339153 ^ 喝去電流偵測電阻所造成的壓降,提 升功率轉換效率。另k 括私、#>〜咕+ ’笔流鏡係直接輸出電流訊號,故 、 +位的轉換,電流偵測訊號可輕易轉換 成PWM控制器可處理之準位範圍,而不需提升pwM控制 器的耐壓能力以配合電流偵測訊號。One worry (PWM) control descent 40 and one liter repeated conversion circuit 5 〇. The light-emitting diode module 10 includes a plurality of parallel-connected light-emitting diode groups. The regulation of the current balancing circuit 20 causes each of the light-emitting diode groups to flow through approximately the same current to emit approximately the same brightness. The current balancing circuit Μ includes a plurality of NMOS transistors. The source and the gate of each NM 〇s transistor are connected to each other, wherein: the ring of the Gang S transistor (the leftmost side in the figure) and the gate are connected to form - Current mirror. The current detecting resistor 3 Q detects the current value flowing through the light emitting diode module 1G, and converts it into a voltage signal Vr output to the PWM t system 40. The PWM controller 40_ is connected to the 'turn voltage VDD and ground, sub-output-control signal to regulate the output power of the boost converter circuit %. The pulse width of the 5-th control signal is adjusted according to the voltage signal %. The boost converter circuit 5 converts the power of the DC input voltage Vin into a DC output voltage according to the control signal of the P WM controller to drive the LED module 10. As explained above, the current detecting circuit a 30 causes a voltage drop Vr, and the MOS transistor in the current balancing circuit 20 also causes a turn-on voltage drop. Obviously, such a circuit architecture τ ' power conversion efficiency is not high. Further, in addition to the boost converter circuit in the first figure, the light-emitting diode drive circuit also has a negative output voltage conversion circuit or the like to match different applications. In order to be able to handle a variety of different application circuits, the _ salt controller 4 (): D j and one of the ground must be connected to the output voltage, resulting in the control of the 咼 withstand voltage capability, increase PW1V [controller cost. [New content] M339153 ^ Drink the voltage drop caused by the current-sense resistor to improve the power conversion efficiency. Another k is private, #>~咕+ 'The pen mirror directly outputs the current signal, so the + bit conversion, the current detection signal can be easily converted into the level range that the PWM controller can handle without lifting The pwM controller's withstand voltage capability matches the current sense signal.

為達上述目的’本創作提供了—種電流偵測裝置,包 含一平衡電流單元以及一偵測單元。上述平衡電流單元包 含-參考端,該參考端用以連接1载並流經—參考電 流。上削貞測單元連接該平衡電流單元並具有—偵測端, 該债測單元m測錢,其中該偵測電流成—預定比 例鏡像複製該參考電流。 本創作也提供了-種直流^電路,包含一轉換電 路、-—m置以及〜控制器。上述轉換電_接_ 輸入電壓並根據^控制賴將該輪人電壓轉換成一直 出電壓至-負載。上述該電流_裝置包含—電⑽4 電流鏡根據流經該負載之一負載蕾治* t ^ 兔々丨L屋生一電流偵測訊 號,其中該電流鏡包含一共同端、〜夫 芩考鳊及至少一鏡像 端,該至少一鏡像端之一為一偵測妒.^ 兄|豕 而,輕接该控制器並等 比例鏡像複製該負載電流而產生該♦ 、 X兒流偵測訊號,該參考 ~及該至少一鏡像端之其他端搞接兮 β負载亚流經該負葡雷 流,該共同端耦接-參考準位。上塊 Ί 壓及接地並由該驅減壓所驅動4接—驅動電 、, 别讀控制器耦接該轉換♦ 路裝置及該電流鏡,並根據該電流偵 、包 、測汛諕產生該控制訊In order to achieve the above objectives, the present invention provides a current detecting device comprising a balanced current unit and a detecting unit. The balanced current unit includes a reference terminal for connecting one carrier and flowing through the reference current. The upper cutting unit is connected to the balancing current unit and has a detecting end, and the detecting unit m measures the money, wherein the detecting current is a predetermined ratio mirroring the reference current. This creation also provides a DC circuit that includes a conversion circuit, -m and ~ controller. The above-mentioned conversion is connected to the input voltage and is converted into a constant voltage to the load according to the control. The current_device includes an electric (10)4 current mirror according to a load flowing through the load, and the current mirror includes a common terminal, and the current mirror includes a common terminal. And at least one mirror end, wherein one of the at least one mirror end is a detecting device, and the controller is lightly connected to the controller and the image is copied by the proportional image to generate the ♦ and X stream detection signals. The reference ~ and the other end of the at least one mirror end engage the 兮β load sub-current through the negative torrent flow, and the common end is coupled to the reference level. The upper block is pressed and grounded and driven by the drive decompression drive 4 - drive power, and the read controller is coupled to the switch ♦ circuit device and the current mirror, and generates the current detector, package, and test Control

調整該負載電流之大小 【實施方式】 、本創作之精神在於以電流鏡來複製產生輸出的負載電 Μ由於私流並無準位之限制,可經由提供適當的參考電 位而轉換成電壓訊號提供給PWM控制器處理,故可避免 習知電流㈣訊號的準位無法被PWM控獅處理,或者 PWM控制&反過來配合仙彳訊號準位之問題。再者,對於 發光-極體驅動電路,為達到每串的發光二極體組能流經 約略相同電流’發出約略相近之亮度,均須要利用到電流 鏡,故直接使用電流鏡做為電流偵測裝置,不僅不需額外 之成本負擔,而且還可免去電流偵測電阻之成本及其造成 的功率轉換效率之下降。 首先,先介紹本創作之電流偵測裝置之結構。請參考 第一圖,為根據本創作一實施例之電流偵測裝置之電路示 意圖。該電流偵測裝置包含一平衡電流單元122以及一偵 测單兀124。平衡電流單元122耦接一負載,並包含一參 考金氧半電晶體。該參考金氧半電晶體之汲極為一參考端 122a’且汲極和閘極連接,而源極則耦接地。偵測單元124 連接該平衡電流單元122並具有一偵測端122a。偵測單元 124包含一偵測金氧半電晶體,該偵測金氧半電晶體之閘 極及沒極分別與該參考金氧半電晶體之間極及汲極連接。 如此’邊參考金氧半電晶體與該偵測金氧半電晶體組成一 電流鏡,當參考端122a流經電流II時,偵測端124a則產 M339153 ^侦挪電流is,其中該摘測電流Is成一預定比知 衣忒=考電流。在本實施例中,該參考金氧半電晶體與該 偵測金氧半電晶體之寬長比(W/L)為η:ι,因此I1/Is^n。 2上述所述,可將負載之電流狀態透過本創作之電流偵測 :置而反應至偵測端,使控制電路可根據偵測端之偵测電 後大小來调控負載之電流大小而達到迴授控制之功能。 4一 a對於負載為發光二極體模組時,由於發光二極體模組 經常具有多串發光二極體組,故本創作之電流偵測裝置可 更具有,少一輸出端,以配合發光二極體模組驅動之應. =如第二圖所示,平衡電流單元122更包含兩輸出金^ 牛電晶體,該些輸出金氧半電晶體之没極分別為輸出端 > b及122C。该些輸出金氧半電晶體之閘極與源極分別與 該參考金氧半電晶體之閘極與源極連接,以組成一電^ 鏡。如此,流經參考端H2a之電流n與流經輪出端122= l*22c之電流I2、I3約略相等(在本實施例中,參考金氧半 電晶體與輸出金氡半電晶體之寬長比相同)。如此,分別耦 接參考端122a及輸出端122b、122c之發光二極體組將流 過約略相等之電流,而發出約略相等之亮度。 机 接著,請參考第三圖,為根據本創作一實施例之直流 轉直流轉換器。在本實施例,以驅動發光二極體模組為例 進行說明。上述之直流轉直流轉換器包含一電流偵测裝置 12〇、一控制器140以及一轉換電路150。該轉換電路15〇 輕接一輸入電壓Vin,並根據該控制器140之一控制訊號 將該輸入電壓Vin轉換成一直流輸出電壓v〇ut至一發光一Adjusting the magnitude of the load current [Embodiment] The spirit of the present invention is to use a current mirror to replicate the output voltage of the output. Since the private current has no limit, it can be converted into a voltage signal by providing an appropriate reference potential. It is processed by the PWM controller, so it can avoid the problem that the current (four) signal level cannot be processed by the PWM control lion, or the PWM control & in turn, cooperate with the Xianhao signal level. Furthermore, for the illuminating-polar body driving circuit, in order to achieve a similar current of each string of light-emitting diode groups, a similarly close current is emitted, and a current mirror is required, so that the current mirror is directly used as the current Detector. The measuring device not only does not require an additional cost burden, but also eliminates the cost of the current detecting resistor and the resulting decrease in power conversion efficiency. First, the structure of the current detecting device of the present invention will be first introduced. Please refer to the first figure, which is a circuit diagram of a current detecting device according to an embodiment of the present invention. The current detecting device includes a balancing current unit 122 and a detecting unit 124. The balancing current unit 122 is coupled to a load and includes a reference MOS transistor. The reference MOS transistor is substantially a reference terminal 122a' and the drain is connected to the gate and the source is coupled to ground. The detecting unit 124 is connected to the balancing current unit 122 and has a detecting end 122a. The detecting unit 124 includes a detecting MOS transistor, and the gate and the immersion of the MOS transistor are respectively connected to the pole and the drain of the reference MOS transistor. Thus, the 'side reference MOS transistor and the MOS transistor form a current mirror. When the reference terminal 122a flows through the current II, the detecting terminal 124a generates the M339153 ^ Detecting current is, wherein the measurement The current Is is a predetermined ratio of the clothing 忒 = test current. In this embodiment, the aspect ratio (W/L) of the reference MOS transistor and the MOS transistor is η: ι, thus I1/Is^n. 2 As described above, the current state of the load can be transmitted through the current detection of the present invention: the reaction is reflected to the detection end, so that the control circuit can adjust the current of the load according to the size of the detected end of the detection terminal to reach back. Control function. When the load is a light-emitting diode module, since the light-emitting diode module often has a plurality of strings of light-emitting diodes, the current detecting device of the present invention can have more and less one output end to match The LED module is driven as follows. As shown in the second figure, the balancing current unit 122 further includes two output gold transistors, and the output of the metal oxide transistors is an output terminal > b And 122C. The gates and sources of the output MOS transistors are respectively connected to the gates and sources of the reference MOS transistors to form an electron mirror. Thus, the current n flowing through the reference terminal H2a is approximately equal to the currents I2, I3 flowing through the wheel terminal 122 = l*22c (in the present embodiment, the width of the reference gold-oxide half-crystal and the output metal-half transistor) The length is the same). Thus, the groups of light-emitting diodes respectively coupled to the reference terminal 122a and the output terminals 122b, 122c will flow approximately equal currents to emit approximately equal brightness. Next, please refer to the third figure, which is a DC-to-DC converter according to an embodiment of the present invention. In this embodiment, a description will be given by taking an example of driving a light-emitting diode module. The DC-to-DC converter described above includes a current detecting device 12A, a controller 140, and a conversion circuit 150. The conversion circuit 15 is lightly connected to an input voltage Vin, and converts the input voltage Vin into a DC output voltage v〇ut to a light-emitting one according to a control signal of the controller 140.

補充 ♦«勢鈕110。該電流鏡包含多個金氧半電晶體,其中^ 金氧半電晶體之閘極與汲極連接,以產生一參考電流U, 使其他金氧半電晶體據此產生一等比例電流I2、I3、Is。 在本貫施例中,該轉換電路15〇為一升壓轉換器(b〇&t converter),包含一電感L、一電容c、一二極體〇及〜: 率開關SW。該電感L 一端耦接輸入電壓vin,另一端連隹 功率開關SW及二極體D。二極體D之正端連接電感乙, 負端連接電容C,以做為整流之用。電容c 一端連接二杻 體D,另一端接地,以進行穩壓並輸出一輸出直流電枣 Vout。功率開關SW連接於該電感L及接地之間,並板辕 該控制器140之控制訊號進行導通/截止之切換。該控制器 H0耦接於一驅動電壓VDD及接地之間,根據電流偵測装 置120之一電流偵測訊號而決定控制訊號之脈寬大小,迷 依此控制功率開關SW之導通/截止之比例,以控制輸出至 發光二極體模組11〇之電力,而達到穩定輸出電流之目 的。其中,一電阻R連接於電流偵測裝置12〇之偵測端與 驅動電壓VDD之間,偵測電流Is流經電阻R而產生上迷 之電流偵測訊號。 上述控制器140包含一欠壓鎖定(UVL0)器141、_ 震盛器142、一脈寬調變比較器143、一誤差放大器144以 及一控制單元149。該欠壓鎖定器141用以判斷驅動電壓 VDD是否已達到一預設電壓準位,若是則發出一訊號通知 控制單元149開始運作。該震盪器142產生一斜波訊號至 脈寬調變比較器143,該誤差放大器144接收上述之電流 M339153 偵測訊號及一參考電壓(VDD_Vref),並據此產生」茶差破」^ 大訊號至脈寬調變比較器M3。由於電流價測裝置12〇與 控制器140之共同電位為VDD,故該參考電壓(vdd_vre^) 係根據驅動電壓VDD來產生,即參考電壓(Vdd_v⑽氣驅 動電壓VDD的電壓差為固定值Vref。該脈寬調變比較器 143比較該斜波訊號及該誤差放大訊號,以輸出一脈寬調 變訊號至控制單元149。該控制單元接收該欠壓鎖定器⑷ 之訊號、該脈寬調變比較器143之脈寬調變訊號及—調光 訊號DIM,以據此輸出控龍號控制轉換電路_ 開關SW的導通或截止。 刀千 舁光雨技術之發光二極體驅動電路相比,本創作之雷 流侧裝置應用於發光二極體驅動電路時,可減 流時造成的壓降,提高轉換電路之功率轉換效率。而= 創作之電流偵測裝置120也可以與控制器、14〇同— (D/O或封裝(Paekage),使驅動電路之佈局上可更 :::。本創作之電流崎置可應用於直流輪出 轉換态’包含,但不限於吉、、六 轉換哭等。以τ = 流轉換器、交流轉直流 轉U叮,再提供幾個實 谓測裝置於應用上可能之變化。 林辦之電流 苓考第四圖,為根據本創作另一實施例之直流 轉換器。相較於第三圖所示之每 —轉直μ 將電流偵測裝置⑽與控制 '四圖之只施例係 電位,如此控制器⑽内=二=同電位轉為接地之 .ρΛ1,Λ/Γ , 的參考電壓產生器之設計鱼習知 控制器相同,也就是本創作也可直接使用習知的 PWM'控制器而達到相同之功能。 11Q ’電流偵測I置120a與發光二極體模组 =V 續置咖之共同端地。相二 :圖例’電流偵測裝置12〇a = 電流鏡以nHf6㈣地。第二 、丨〇而126b、一弟二表者迪19A 以及一第二鏡像端126c,該第_ 驻罢ion 參考^ 126a輕接電流偵測 的偵測端,該第二鏡像端126c耦接該押制哭_ =經=電“等比例產生一鏡二: 中,構T"咖VDD。在本實施例 1明— 之構成以雙極接合型電晶體為例進行 :弟—電流鏡126為兩雙極接合型電 雙極接合㈣•之射極與基極彼此相 電 考端之雙極接合型電晶體之基極與集極連 入艰雷t流偵測裝置u〇a的铺測端。兩雙極接 =1:?之射極為第二共同端i26b。對應第二鏡像端 26^極接合型電晶體之集極键—電阻R, 流偵測裝ima之共同t r 之控制器、140與電Supplement ♦ « Potential button 110. The current mirror comprises a plurality of MOS transistors, wherein the gate of the MOS transistor is connected to the drain to generate a reference current U, so that other MOS transistors generate a proportional current I2 accordingly. I3, Is. In the present embodiment, the conversion circuit 15 is a boost converter (b〇 & t converter), and includes an inductor L, a capacitor c, a diode 〇, and a ~: rate switch SW. The inductor L has one end coupled to the input voltage vin and the other end connected to the power switch SW and the diode D. The positive terminal of the diode D is connected to the inductor B, and the negative terminal is connected to the capacitor C for use as a rectification. Capacitor c is connected to the body D at one end and grounded at the other end to regulate and output an output DC voltage Vout. The power switch SW is connected between the inductor L and the ground, and the control signal of the controller 140 is switched on/off. The controller H0 is coupled between a driving voltage VDD and a ground, and determines a pulse width of the control signal according to a current detecting signal of the current detecting device 120, and the ratio of the on/off of the power switch SW is controlled by the controller. In order to control the power output to the LED module 11 to achieve stable output current. A resistor R is connected between the detecting end of the current detecting device 12 and the driving voltage VDD, and the detecting current Is flows through the resistor R to generate a current detecting signal. The controller 140 includes an undervoltage lockout (UVL0) 141, a snubber 142, a pulse width modulation comparator 143, an error amplifier 144, and a control unit 149. The undervoltage lockout 141 is configured to determine whether the driving voltage VDD has reached a predetermined voltage level, and if so, a signal is sent to notify the control unit 149 to start operating. The oscillator 142 generates a ramp signal to the pulse width modulation comparator 143. The error amplifier 144 receives the current M339153 detection signal and a reference voltage (VDD_Vref), and generates a "tea break" signal. To pulse width modulation comparator M3. Since the common potential of the current measuring device 12A and the controller 140 is VDD, the reference voltage (vdd_vre^) is generated according to the driving voltage VDD, that is, the voltage difference of the reference voltage (Vdd_v(10) gas driving voltage VDD is a fixed value Vref. The pulse width modulation comparator 143 compares the ramp signal and the error amplification signal to output a pulse width modulation signal to the control unit 149. The control unit receives the signal of the undervoltage lockout (4), and the pulse width modulation The pulse width modulation signal of the comparator 143 and the dimming signal DIM are used to output the control signal of the control unit _ switch SW according to the output control 143. Compared with the LED driving circuit of the Knife Light and Light Technology, When the lightning flow side device of the present invention is applied to the LED driving circuit, the voltage drop caused by the current can be reduced, and the power conversion efficiency of the conversion circuit can be improved. The created current detecting device 120 can also be combined with the controller, 14 —同—(D/O or package (Paekage), the layout of the drive circuit can be more::: The current of this creation can be applied to the DC turn-off conversion state 'including, but not limited to, JI, VI conversion Crying, etc. to τ = Converter, AC to DC to U叮, and then provide several real means to change the application. The current of the forest is based on the fourth picture, which is a DC converter according to another embodiment of the present invention. In the third figure, the current detecting device (10) and the control unit of the four graphs are used to control the potential, so that the controller (10) ====the same potential is turned into the ground. ρΛ1, Λ/Γ The design of the reference voltage generator is the same as that of the conventional fish controller, that is, the creation can also directly use the conventional PWM' controller to achieve the same function. 11Q 'Current detection I set 120a and the LED module Group = V Continuation of the common ground of the coffee. Phase 2: Legend 'current detection device 12 〇 a = current mirror with nHf6 (four) ground. Second, 丨〇 126b, one brother two watcher di 19A and a second mirror The end 126c, the first _ stationing reference 126a is connected to the detecting end of the current detecting, the second mirroring end 126c is coupled to the arbitrarily crying _ = by = electric "equal ratio produces a mirror two: medium, structure T"Caf VDD. In the first embodiment, the configuration is performed by taking a bipolar junction type transistor as an example: a brother-current mirror 126 is a two-pole junction type electric bipolar junction (four) • the base and the collector of the bipolar junction type transistor of the emitter and the base of each other are connected to the tough t-stream detecting device u〇a Measure the end of the test. Two pairs of poles are connected = 1: The shot is extremely second common end i26b. Corresponding to the second mirror end 26^ pole-joined transistor collector key - resistor R, flow detection ima common tr Controller, 140 and electricity

Vref ^ R包立為〇V (接地),故該參考電壓Vref ^ R is set to 〇V (ground), so the reference voltage

Vref係根據接地之電位來 電壓差為固定值。 產纟_參考電壓vref與接地的 =為根據本創作再一實施例 二==之實施例與第四圖所示之實施例之不同處 “貞测裝置中之電流鏡由金氧半電晶體改以雙極接 12Vref is based on the ground potential and the voltage difference is a fixed value.纟 参考 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Change to double pole to connect 12

M339153 / r" * R S 个金、y 合型電晶體來實施。電流偵測裝置120包含一平H日 元122及一偵測單元124。該平衡電流單元122包: 考雙極接合型電晶體122&及至少一輸出雙極接合型電晶 體122b、122c。該參考雙極接合型電晶體122a之一基 該至少-輸出雙極接合型電晶體122b、122e之基極=與 該參考雙極接合型電晶體122a之一射極與該至少—轸出 雙極接合型電晶體122b、122c之射極連接。該參考雙: ,型電晶體122a之-集極做為上述之參考端並連接至亨 參考雙極接合型電晶體122a之該基極,該至少—輸出雔^ 接合型電晶體122b、122c之集極做為上述之至^ — 端。偵測單元124包含一雙極接合型電晶體12如及一 鏡。該雙極接合型電晶體124a之基極連接該參考雙極^ 型電晶體122a之基極,其射極連接該參考雙極接合型^ 體122a之射極’其集極為關測端,連接該電流鏡之^ 端。電流鏡之鏡像端根據流經該偵測端之偵測電流k產生 ^成比例之鏡像電流Is’,並經電阻R後產生—電流债測訊 接下來參見第六圖,為第三圖所示之實施例之另—個 變化電路。與第三圖所示之實施例不同處為,第六圖所干 的電流摘測裝置120耦接在直流輸出電壓v〇m與發光二極 體模組110之間。為了讓電流债測裝置12〇與控制器⑽ 間有-共同準位,故電流_裝置⑽透過電阻搞 ,地(或者可耦接至驅動電壓VDD)。其中,電阻r,係 量電流偵測裝置120之偵測端若僅透過電阻尺時,會造成 13 鎮 153 金氧半電晶體之源極與汲極之電壓差過大’不僅會 影響電流偵測之精準度外,也使電流偵測裝置120之耐壓 要求提高,透過增加電阻R’則可避免上述之問題。 請參見第七圖,為根據本創作之一實施例的之直流轉 直流轉換器之電路示意圖。本實施例中的轉換電路之轉換 比例(_Vout/Vin)為-D/(l-D),即直流輸出電壓-Vout為負 電壓。同樣地,為了使電流偵測裝置120與控制器140間 有一共同電位,電流偵測裝置120麵接驅動電壓VDD。與 上述之貫施例不同處為’為了提南電流偵測的精準度5該 電流偵測裝置120之偵測單元更包含一準位調整單元 128,使該電流偵測裝置120中的參考端與偵測端的電晶體 之三個端點之電位完全一致,使電流Π與Is完全一致。該 準位調整單元128可為一電壓隨耦器,耦接於對應該偵測 端之金氧半電晶體之汲極與該參考端之金氧半電晶體之汲 極之間,使該偵測單元之金氧半電晶體之汲極之電壓準位 約略等於該參考金氧半電晶體之汲極之電壓準位。另外, 於偵測端與電阻R之間耦接一電晶體129,該電晶體之閘 極與汲極連接,使電晶體129的跨壓可隨直流輸出電壓之 高低調整。 參見第八圖,為根據本創作之另一實施例的之直流轉 直流轉換器之電路示意圖。在本實施例中,與前述之實施 例間最大之不同在於偵測單元124包含了兩組電流鏡。第 一組電流鏡之共同端連接一參考電準位-Vout’,參考準位 -Vout’可以等於直流輸出電壓-Vout或其分壓所產生。第一 14 M339153 97. 年月‘°日 =電流鏡之參考端與電流_裝置i2 ,㈣等比例產生—鏡像_電流Is,。 共同端連接驅動電壓v D D, 一、、且甩肌鏡之 端,並於鏡像端等比例產生弟一組電流鏡之鏡像 如上述所述,本創作電流1S”。 測訊號轉換成控制器可處理二位置可輪易將電流偵 控制器㈣Μ能力以配合^乾圍,而不需提升PWM 測電阻所造成_降,提錢。亦可省去電流偵 局。 W功率轉換效率,簡化電路之佈 與圖I上:用僅為本創作較佳之具體實施例之詳細說明 述之申往專利纩二制本創作’本創作之所有範圍應以下 Τ明导利轭圍為準, 神與其類似變化之^ 作^專利範圍之精 任何熟悉該項技應包含於本創作之範嘴中, 化或修飾皆可二:: 領域内’可清意思及之變 叫義在以下本創作專利範圍内。 【圖式簡單說明】 第圖為先珂技術中的發光二極體驅動電路之電路示 ^囷為根據本創作一實施例之電流偵測裝置之電路 意圖 意圖 修正.丨 ,y 換器圖圖為根據本創作實施例之直流轉直流轉 15 γ 年 j.:i : n ^ I 一元件符號說明】 發光二極體模組 10 電流平衡電路 20 電流偵測電阻 30 脈寬調變控制器 40 升壓轉換電路 50 發光二極體模組 110 電流偵測裝置 120 、 120a 平衡電流單元 122 參考端 122a 輸出端 122b 、 122c 偵測單元 124 偵測端 124a 第二電流鏡 126 第二參考端 126a 第二共同端 126b 第二鏡像端 126c 準位調整單元 128 電晶體 129 控制器 140 欠壓鎖定器 141 震盪器 142 脈寬調變比較器 143 誤差放大器 144 16 M339153 控制單元 轉換電路 電容 二極體 調光訊號 電流 電感 功率開關 電阻 驅動電壓 輸入電壓 直流輸出電壓 參考準位 電壓壓降 149M339153 / r" * R S gold and y-type transistors are implemented. The current detecting device 120 includes a flat H-day unit 122 and a detecting unit 124. The balanced current unit 122 includes: a bipolar junction type transistor 122& and at least one output bipolar junction type of electric crystals 122b, 122c. One of the reference bipolar junction type transistors 122a is based on the base of the at least output bipolar junction type transistors 122b, 122e = one of the emitters of the reference bipolar junction type transistor 122a and the at least one The emitters of the pole junction type transistors 122b, 122c are connected. The reference double: the collector of the type transistor 122a serves as the reference terminal and is connected to the base of the ohmic reference bipolar junction type transistor 122a, and the at least one output 电^ junction type transistor 122b, 122c The collector is used as the above to the end. The detecting unit 124 includes a bipolar junction type transistor 12 such as a mirror. The base of the bipolar junction type transistor 124a is connected to the base of the reference bipolar transistor 122a, and the emitter of the bipolar junction type transistor 122a is connected to the emitter of the reference bipolar junction type 122a. The end of the current mirror. The mirror end of the current mirror generates a proportional mirror current Is' according to the detected current k flowing through the detecting end, and is generated after the resistor R. The current debt test is next to the sixth figure, which is the third figure. Another variation of the embodiment is shown. The difference from the embodiment shown in FIG. 3 is that the current extraction device 120 of the sixth figure is coupled between the DC output voltage v〇m and the LED module 110. In order to have a common level between the current debt measuring device 12 and the controller (10), the current_device (10) is grounded through the resistor (or can be coupled to the driving voltage VDD). Wherein, the resistance r, if the detecting end of the current detecting device 120 only passes through the resistance ruler, the voltage difference between the source and the drain of the 13-town 153 gold-oxygen semiconductor is too large, which not only affects the current detection. In addition to the accuracy, the withstand voltage requirement of the current detecting device 120 is also increased, and the above problem can be avoided by increasing the resistance R'. Referring to the seventh figure, there is shown a circuit diagram of a DC-to-DC converter according to an embodiment of the present invention. The conversion ratio (_Vout/Vin) of the conversion circuit in this embodiment is -D/(l-D), that is, the DC output voltage -Vout is a negative voltage. Similarly, in order to have a common potential between the current detecting device 120 and the controller 140, the current detecting device 120 is connected to the driving voltage VDD. The difference from the above-mentioned embodiment is that the detection unit of the current detecting device 120 further includes a level adjusting unit 128 for making the reference end in the current detecting device 120. It is exactly the same as the potential of the three terminals of the transistor at the detecting end, so that the current Π is completely consistent with Is. The level adjusting unit 128 can be a voltage follower coupled between the drain of the MOS transistor corresponding to the detecting end and the drain of the MOS transistor of the reference end, so that the Detector The voltage level of the drain of the gold-oxide semi-transistor of the measuring unit is approximately equal to the voltage level of the drain of the reference gold-oxide semiconductor. In addition, a transistor 129 is coupled between the detecting end and the resistor R. The gate of the transistor is connected to the drain, so that the voltage across the transistor 129 can be adjusted according to the DC output voltage. Referring to the eighth diagram, there is shown a circuit diagram of a DC-to-DC converter according to another embodiment of the present invention. In this embodiment, the biggest difference from the foregoing embodiments is that the detecting unit 124 includes two sets of current mirrors. The common terminal of the first set of current mirrors is connected to a reference level -Vout', and the reference level -Vout' can be equal to the DC output voltage -Vout or its partial voltage. The first 14 M339153 97. Year ‘°Day = the reference end of the current mirror is generated in proportion to the current_device i2, (iv)—mirror_current Is,. The common terminal is connected to the driving voltage v DD , and the end of the 甩 muscle mirror, and the image of the current mirror is generated in proportion to the mirror end. As described above, the current is 1S”. The signal is converted into a controller. Handling the two positions can be easy to use the current detection controller (four) Μ ability to cooperate with the dry circumference, without the need to increase the PWM resistance to reduce the _ drop, money. Can also save the current Detection. W power conversion efficiency, simplify the circuit Cloth and Figure I: The application of the patent application is only described in the detailed description of the preferred embodiment of the present invention. 'All the scope of this creation should be based on the following guide, and God and its similar changes. ^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^ BRIEF DESCRIPTION OF THE DRAWINGS The figure is a circuit diagram of a light-emitting diode driving circuit in the prior art. The circuit is intended to correct the circuit of the current detecting device according to an embodiment of the present invention. 丨, y converter diagram Implemented according to this creation DC to DC to 15 γ years j.:i : n ^ I a component symbol description] LED module 10 current balancing circuit 20 current detection resistor 30 pulse width modulation controller 40 boost converter circuit 50 Diode module 110 current detecting device 120, 120a balancing current unit 122 reference terminal 122a output terminal 122b, 122c detecting unit 124 detecting terminal 124a second current mirror 126 second reference terminal 126a second common terminal 126b second Mirror end 126c level adjustment unit 128 transistor 129 controller 140 undervoltage locker 141 oscillator 142 pulse width modulation comparator 143 error amplifier 144 16 M339153 control unit conversion circuit capacitor dimmer dimming signal current inductor power switch resistance Drive voltage input voltage DC output voltage reference level voltage drop 149

150 C D150 C D

DIMDIM

II〜13、Is〜Is” LII~13, Is~Is" L

SWSW

RR

VDDVDD

VinVin

Vout Λ -Vout -Vout,Vout Λ -Vout -Vout,

VrVr

1717

Claims (1)

γ^4239153 篇.,丨 九:、:令請專利範圍: 1. 一種電流彳貞測裝置,包含: 一平衡電流單元,包含一參考端,用以耦接一負載, 該麥考端流經一爹考電流,以及 一偵測單元,連接該電流單元並具有一偵測端,該 偵測單元產生一偵測電流,其中該偵測電流成一預定比 例鏡像複製該參考電流。 2. 如申請專利範圍第1項所述之電流偵測裝置,其中該平 衡電流單元更包含至少一輸出端,每一該至少一輸出端 均耦接該負載並流經約略等於該參考電流之一電流。 3. 如申請專利範圍第2項所述之電流偵測裝置,其中該平 衡電流單元包含一參考金氧半電晶體及至少一輸出金氧 半電晶體,其中該參考金氧半電晶體之一閘極與該至少 一輸出金氧半電晶體之閘極連接,該參考金氧半電晶體 之一源極與該至少一輸出金氧半電晶體之源極連接,該 參考金氧半電晶體之一汲極為該參考端並連接至該參考 金氧半電晶體之該閘極,該至少一輸出金氧半電晶體之 汲極為該至少一輸出端。 4. 如申請專利範圍第3項所述之電流偵測裝置,其中該偵 測單元係包含一金氧半電晶體,該偵測單元之金氧半電 晶體之閘極連接該參考金氧半電晶體之閘極,該偵測單 元之金氧半電晶體之源極連接該參考金氧半電晶體之源 極,該偵測單元之金氧半電晶體之汲極為該偵測端。 5. 如申請專利範圍第4項所述之電流偵測裝置,其中該偵 18γ^4239153 篇., 丨九::: Please ask for a patent range: 1. A current sensing device comprising: a balanced current unit comprising a reference end for coupling to a load, the McCaw end flowing through A test current, and a detecting unit connected to the current unit and having a detecting end, the detecting unit generates a detecting current, wherein the detecting current copies the reference current in a predetermined ratio. 2. The current detecting device of claim 1, wherein the balancing current unit further comprises at least one output, each of the at least one output being coupled to the load and flowing through the reference current. A current. 3. The current detecting device of claim 2, wherein the balancing current unit comprises a reference MOS transistor and at least one output MOS transistor, wherein the reference MOS transistor a gate is connected to the gate of the at least one output MOS transistor, and a source of the reference MOS transistor is connected to a source of the at least one output MOS transistor, the reference MOS transistor One of the reference terminals is connected to the gate of the reference MOS transistor, and the at least one output MOS transistor is substantially at least one output end. 4. The current detecting device of claim 3, wherein the detecting unit comprises a MOS transistor, and the gate of the MOS transistor is connected to the reference MOS half. The gate of the transistor, the source of the MOS transistor of the detecting unit is connected to the source of the reference MOS transistor, and the MOSFET of the detecting unit is extremely close to the detecting end. 5. The current detecting device of claim 4, wherein the detecting device JJ1 猶无ί 翅更包含一電流鏡,該電流鏡之一參考 氧半電晶體之汲極,該電流鏡之一鏡像端根據該偵測電 流產生一成比例之鏡像電流。 6.如申請專利範圍弟4項所述之電流Ί貞測裝置’其中該4貞 測單元更包含一準位調整單元,該準位調整單元耦接於 該^貞測早元之金氧半電晶體之 >及極與該參考金氧半電晶 體之汲極之間,使該偵測單元之金氧半電晶體之汲極之 電壓準位約略等於該參考金氧半電晶體之汲極之電壓準 • ·. · * . 位0 7. 如申請專利範圍第2項所述之電流偵測裝置,其中該平 衡電流單元包含一參考雙極接合型電晶體及至少一輸出 雙極揍合型電晶體,其中該參考雙極接合型電晶體之一 基極與該至少一輸出雙極接合型電晶體之基極連接,該 參考雙極接合型電晶體之一射極與該至少一輸出雙極接 合型電晶體之射極連接,該參考雙極接合型電晶體之一 集極為該參考端並連接至該參考雙極接合型電晶體之該 基極,該至少一輸出雙極接合型電晶體之集極為該至少 一輸出端。 8. 如申請專利範圍第7項所述之電流偵測裝置,其中該偵 測單元係包含一雙極接合型電晶體,該偵測單元之雙極 接合型電晶體之基極連接該參考雙極接合型電晶體之基 極,該偵測單元之雙極接合型電晶體之射極連接該參考 雙極接合型電晶體之射極,該偵測單元之雙極接合型電 晶體之集極為該偵測端。 19 153 153JJ1 still has a current mirror. One of the current mirrors refers to the drain of the oxygen half transistor. One of the mirror ends of the current mirror generates a proportional mirror current according to the detected current. 6. The current sensing device of claim 4, wherein the 4 measuring unit further comprises a level adjusting unit coupled to the gold oxygen half of the measuring element Between the transistor> and the drain of the reference MOS transistor, the voltage level of the drain of the MOS transistor is approximately equal to that of the reference MOS transistor. 7. The current detecting device of claim 2, wherein the balancing current unit comprises a reference bipolar junction type transistor and at least one output bipolar port. a combined transistor, wherein a base of the reference bipolar junction transistor is coupled to a base of the at least one output bipolar junction transistor, and an emitter of the reference bipolar junction transistor and the at least one An emitter connection of the output bipolar junction type transistor, one of the reference bipolar junction type transistors is coupled to the reference terminal and coupled to the base of the reference bipolar junction type transistor, the at least one output bipolar junction The set of type transistors is at least one output. 8. The current detecting device of claim 7, wherein the detecting unit comprises a bipolar junction type transistor, and a base of the detecting unit of the bipolar junction type transistor is connected to the reference pair a base of the pole-joining transistor, the emitter of the bipolar junction type transistor of the detecting unit is connected to the emitter of the reference bipolar junction type transistor, and the set of the bipolar junction type transistor of the detecting unit is extremely The detection end. 19 153 153 9. 如申請專利範圍第8項所述之電流偵測裝置 測單元更包含一電流鏡,該電流鏡之一參考端耦接該雙 極接合型電晶體之集極,該電流鏡之一鏡像端根據該偵 測電流產生一成比例之鏡像電流。 10. 如申請專利範圍第8項所述之電流偵測裝置,其中該偵 測單元更包含一準位調整單元,該準位調整單元耦接於 該偵測單元之雙極接合型電晶體之集極與該參考雙極 -接合型電晶體之集極之間,使該偵測單元之雙極接合型 \ 電晶體之集極之電壓準位約略等於該參考雙極接合型 鲁: 電晶體之集極之電壓準位。 11. 一種具有電流偵測裝置之直流輸出電路,包含: 一轉換電路,耦接一輸入電壓,並根據一控制訊號 將該輸入電壓轉換成一直流輸出電壓至一負載; 一電流偵測裝置,包含一電流鏡,根據流經該負載 之一負載電流產生一電流偵測訊號,其中該電流鏡包含 一第一共同端、一第一參考端及至少一第一鏡像端,該 Φ 至少一第一鏡像端之一為一偵測端,耦接該控制器並等 比例鏡像複製該負載電流而產生該電流偵測訊號,該第 一參考端及該至少一第一鏡像端之其他端耦接該負載 並流經該負載電流,該第一共同端耦接一第一參考準 位;以及 一控制器,稱接一驅動電壓及接地並由該驅動電壓 所驅動,該控制器耦接該轉換電路及該電流鏡,並根據 該電流偵測訊號產生該控制訊號,以調整該負載電流之 20 M339153 大小。 1 12. 如申請專利範圍第11項所述之直流輸出電路,其中該 第一參考端與其他耦接至該負載之該些第一鏡像端流 經約略相等之電流。 13. 如申請專利範圍第11項所述之直流輸出電路,更包含 一電阻,該電阻之一端耦接該偵測端,另一端連接該驅 動電壓或接地。 14·如申請專利範圍第11項所述之直流輸出電路,更包含 一第二電流鏡,包含一第二共同端、一第二參考端以及 一第二鏡像端,該第二參考端耦接該偵測端,該第二鏡 像端耦接該控制器並根據該電流偵測訊號等比例產生 一鏡像偵測電流,該第二共同端耦接一第二參考準位。 15·如申請專利範圍第14項所述之直流輸出電路,其中該 第二參考準位為該驅動電壓之準位。 16.如申請專利範圍第11項所述之直流輸出電路,其中該 第一共同端耦接地。 17·如申請專利範圍第16項所述之直流輸出電路,更包含 一電阻,該電阻耦接於該驅動電壓及該偵測端之間,流 經該偵測端之電流流過該電阻以產生該電流偵測訊號。 18. 如申請專利範圍第16項所述之直流輸出電路,更包含 一電阻,該電阻耦接於該偵測端及耦接地,流經該偵測 端之電流流過該電阻以產生該電流偵測訊號。 19. 如申請專利範圍第11項所述之直流輸出電路,其中該 直流輸出電壓為一負電壓,該第一共同端耦接地。 21 M339153 年月請專利範圍第11項所述之直流輸出電路,其中該 ____ϋ輸出電壓為一負電壓,該第一共同端耦接該直流輸 出電壓。 21. 如申請專利範圍第20項所述之直流輸出電路,其中該 第一參考準位為該直流輸出電壓之準位。 22. 如申請專利範圍第21項所述之直流輸出電路,更包含 一第二電流鏡,包含一第二共同端、一第二參考端以及 一第二鏡像端,該第二參考端耦接該偵測端,該第二鏡 像端耦接該控制器並根據該電流偵測訊號等比例產生 一鏡像偵測電流,該第二共同端耦接一第二參考準位, 該第二參考準位低於接地之準位。 23. 如申請專利範圍第20項所述之直流輸出電路,更包含 一電阻,該電阻耦接於該驅動電壓及該偵測端之間,流 經該偵測端之電流流過該電阻以產生該電流偵測訊號。 229. The current detecting device measuring unit according to claim 8 further comprising a current mirror, wherein a reference end of the current mirror is coupled to the collector of the bipolar junction type transistor, and one of the current mirrors is mirrored The terminal generates a proportional image current according to the detected current. 10. The current detecting device of claim 8, wherein the detecting unit further comprises a level adjusting unit coupled to the bipolar junction type transistor of the detecting unit Between the collector and the collector of the reference bipolar-junction transistor, the voltage level of the collector of the bipolar junction type/transistor of the detection unit is approximately equal to the reference bipolar junction type: transistor The voltage level of the collector. A DC output circuit having a current detecting device, comprising: a converting circuit coupled to an input voltage, and converting the input voltage into a DC output voltage according to a control signal; and a current detecting device comprising a current mirror generates a current detecting signal according to a load current flowing through the load, wherein the current mirror includes a first common end, a first reference end, and at least a first mirror end, wherein the Φ is at least a first One of the mirroring ends is a detecting end, and the controller is coupled to the controller and the image is generated by the equal-magnitude mirroring to generate the current detecting signal. The first reference end and the other end of the at least one first mirroring end are coupled to the The load is coupled to the load current, the first common terminal is coupled to a first reference level; and a controller is coupled to and driven by the driving voltage and the ground, and the controller is coupled to the conversion circuit And the current mirror, and generating the control signal according to the current detection signal to adjust the magnitude of the load current of 20 M339153. The DC output circuit of claim 11, wherein the first reference terminal and the other first mirror ends coupled to the load pass approximately the same current. 13. The DC output circuit of claim 11, further comprising a resistor, one end of the resistor coupled to the detecting end and the other end connected to the driving voltage or ground. The DC output circuit of claim 11, further comprising a second current mirror comprising a second common end, a second reference end and a second mirror end, wherein the second reference end is coupled In the detecting end, the second mirroring end is coupled to the controller and generates a mirroring detection current according to the current detecting signal, and the second common terminal is coupled to a second reference level. 15. The DC output circuit of claim 14, wherein the second reference level is a level of the driving voltage. 16. The DC output circuit of claim 11, wherein the first common terminal is coupled to ground. The DC output circuit of claim 16, further comprising a resistor coupled between the driving voltage and the detecting end, wherein a current flowing through the detecting end flows through the resistor The current detection signal is generated. 18. The DC output circuit of claim 16, further comprising a resistor coupled to the detecting end and coupled to the ground, wherein a current flowing through the detecting end flows through the resistor to generate the current Detection signal. 19. The DC output circuit of claim 11, wherein the DC output voltage is a negative voltage, and the first common terminal is coupled to ground. 21 M339153 The DC output circuit described in claim 11 wherein the output voltage is a negative voltage, and the first common terminal is coupled to the DC output voltage. 21. The DC output circuit of claim 20, wherein the first reference level is a level of the DC output voltage. 22. The DC output circuit of claim 21, further comprising a second current mirror comprising a second common end, a second reference end, and a second mirror end coupled to the second reference end In the detecting end, the second mirroring end is coupled to the controller and generates a mirroring detection current according to the current detecting signal, and the second common terminal is coupled to a second reference level. The bit is below the grounding level. 23. The DC output circuit of claim 20, further comprising a resistor coupled between the driving voltage and the detecting end, wherein a current flowing through the detecting end flows through the resistor The current detection signal is generated. twenty two
TW96218246U 2007-10-12 2007-10-12 DC output circuit with current detecting device TWM339153U (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI381266B (en) * 2008-08-28 2013-01-01 Etron Technology Inc A current mirror with immunity for the variation of threshold voltage and the generation method thereof
TWI411357B (en) * 2008-12-19 2013-10-01 Himax Analogic Inc Led circuit with high dimming frequency
TWI418252B (en) * 2009-08-17 2013-12-01 Novatek Microelectronics Corp Control method capable of avoiding flicker effect and light emitting device
DE202013105056U1 (en) 2013-11-11 2014-01-30 Es Jintzan Co., Ltd. toolbox
TWI509966B (en) * 2010-12-08 2015-11-21 Upi Semiconductor Corp Sensing circuit of power converter

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI381266B (en) * 2008-08-28 2013-01-01 Etron Technology Inc A current mirror with immunity for the variation of threshold voltage and the generation method thereof
TWI411357B (en) * 2008-12-19 2013-10-01 Himax Analogic Inc Led circuit with high dimming frequency
TWI418252B (en) * 2009-08-17 2013-12-01 Novatek Microelectronics Corp Control method capable of avoiding flicker effect and light emitting device
TWI509966B (en) * 2010-12-08 2015-11-21 Upi Semiconductor Corp Sensing circuit of power converter
DE202013105056U1 (en) 2013-11-11 2014-01-30 Es Jintzan Co., Ltd. toolbox

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