M330478 八、新型說明： 【新型所屬之技術領域】 本創作係有關-種五平行雷射光束之光軸調校裝置，其設備 •簡單且價格便宜、光軸調校簡單快速、可大量生產、與適用於複 ， 雜光學系統的調校等優點。 【先前技術】 在光學上使用拋物面鏡較使用球面鏡的優點是可以改善球面 .像差’讓無窮遠來的光絲成—小光點。制離減物面鏡是利 用其在轴上只有一焦點的特性，以便於聚光和對焦。目前多半之 光學測試台顧的絲校正鏡皆為—_拋物面鏡(Qff—_ parabolic mirror);以離軸拋物面為校正工具之原因有三： (a) 點光源在離軸拋物面的旋轉軸之焦點時，能產生平行主軸 的光線； (b) 平行於光軸的平行光可以準確的聚焦於一點上； ► (C)可設置於光學桌上（空間有限）且使得校正光路不受到遮 蔽，並且能有較長焦距的校正鏡。 . 關於離軸拋物面鏡之光學特性，至少由四個參數：母子兩光 軸距離(ZR)、離軸距離(Off-axis distance，簡稱〇AD)、面鏡口 徑（CA)及焦距(母鏡有的效焦距：efl及子鏡的斜向有效焦距：SFL) 所疋義。至於離軸角度的定義為母鏡有效焦距向量（efl)及子鏡的 斜向有效焦距向量（SFL)的夾角。 一般在使用離軸拋物面鏡當光學校正鏡之前，必需先利用雷 5 M3 3 047 8 射干涉儀(LUPI)進行離軸抛物面鏡調校，以找出光軸、焦點位置 及乡考平面鏡’此種調校方法手續很繁雜，設備也很昂貴，無法 大量生產。 而光學測試台所用的準直鏡組做最後系統調校時 ，可將光源 及目標板置麟她物面聽、點上，並_轉拋物面鏡上設置 之參考平面鏡（出薇前即經調校與光軸垂直)確認光源及目標板確M330478 VIII. New description: [New technical field] This creation is related to the optical axis adjustment device of five parallel laser beams. The equipment is simple and inexpensive, the optical axis adjustment is simple and fast, and it can be mass-produced. It has advantages such as adjustment for complex and miscellaneous optical systems. [Prior Art] The advantage of using a parabolic mirror optically compared to using a spherical mirror is that the spherical surface can be improved. The aberrations make the light filament at infinity into a small light spot. The subtractive subtractive mirror uses its characteristic of only one focus on the shaft to facilitate focusing and focusing. At present, most of the optical test benches of the optical test bench are - _ parabolic mirrors (Qff - _ parabolic mirror); the off-axis paraboloid is used as a correction tool for three reasons: (a) the focus of the point source on the axis of rotation of the off-axis paraboloid (b) Parallel light parallel to the optical axis can be accurately focused on one point; ► (C) can be placed on the optical table (limited space) and the correcting optical path is not obscured, and A correction mirror that can have a longer focal length. Regarding the optical characteristics of the off-axis parabolic mirror, there are at least four parameters: mother-child two-axis distance (ZR), off-axis distance (〇AD), mirror aperture (CA), and focal length (matrix). Some effective focal lengths: efl and the oblique effective focal length of the sub-mirror: SFL). The off-axis angle is defined as the angle between the effective focal length vector (efl) of the mother mirror and the oblique effective focal length vector (SFL) of the sub-mirror. Generally, before using an off-axis parabolic mirror as an optical correction mirror, it is necessary to use the Ray 5 M3 3 047 8 Interferometer (LUPI) for off-axis parabolic mirror calibration to find the optical axis, focus position, and the township plane mirror. The method of adjusting the method is very complicated, and the equipment is also expensive and cannot be mass produced. When the collimator lens set used in the optical test bench is used for the final system adjustment, the light source and the target plate can be placed on the surface of the object, and the reference plane mirror set on the parabolic mirror can be adjusted. The school and the optical axis are vertical) confirm the light source and the target board
實位於雜獅崎之鎌上；但朗參考平硫調校的手續及 戶^需工具(至少包括自準直儀、統雷射光以及光學爽具）亦是相 田繁雜無法快速進仃光軸調校，且參考平面鏡必需於出廠前調 校，增加生產成本。 因此，有必要研發新產品，以解決上述缺點及問題。 【新型内容】 本創叙主要目的’在於提供_種五平行雷射絲之光轴調 杈衣置，其設備簡單且價格便宜。 本創作之_人-目的，在於提供—種五平行雷射光束之光轴調 仅衣置，其光軸調校簡單快速。 本創作之又'—目的，在於挺>fi£ n 校裝置，其可大量生產。 種五平_光束之先轴調 卿ΐ創目的’在於提供―種五平行光束之先軸調 仅衣置，其適用於複雜光學系統的調校。 2作係提供-種五平行雷射光束之光軸調校裝置其包括： 調校裝置主體，传曼少且古 U. ’、 /、 衣置面及一參考面，該裝置 6 M330478 面上具有一虛擬中心點、一第一虛擬軸及一帛二虛擬轴，該第一、 第虛擬軸係相互垂直於該虛擬中心點該參考面係垂直於水平 線；' • 一半導體雷射部，係包括： . ―第—半導體雷射部，係設於難置面上，錄於該虛擬 中心點上’該第—半導體雷射部係發出-第-雷射光束，該第一 雷射光束係垂直該參考面·， • -第二轉體雷射部，係設_裝置面上，且位於該虛擬 中心點左邊的第-虛擬軸上；該第二半導體雷射部係發出一第二 雷射光束’該第二雷射光束係平行該第-雷射光束； 一第二半導體雷射部’係設於該裝置面上，域於該虛擬 中心點右邊的第-虛擬轴上；該第三半導體雷射部係發出一第三 雷射光束’該第三雷射光束係平行該第—雷射光束； -第四半導體雷射部’係設於職置面上，錄於該虛擬 . 巾^點上邊的第二虛擬軸上；該第四半導體雷射部係發出一第四 •雷射光束’該第四雷射光束係平行該第-雷射光束； ， -第五半導體雷射部’係設於該裝置面上，且位於該虛擬 中心點下邊的第二虛擬軸上；該第五半導體雷射部係發出一第五 雷射光束，該第五雷射光束係平行該第一雷射光束。 本創作之上述目的與優點，不難從下騎實施例之詳細 说明與附圖中，獲得深入瞭解。 茲以下列實施例並配合圖式詳細說明本創作於後·· 7 M330478 【實施方式】 參閱第一圖，本創作係為 置，其包括： -種五平行雷射光束之光轴調校 裝It is located on the top of the Misty Kawasaki; however, the procedures and household tools required for the gradual adjustment of the sulphur sulphur (including at least the self-collimator, the system of the laser and the optical slick) are also complicated by the phase. The school, and the reference plane mirror must be adjusted before leaving the factory to increase production costs. Therefore, it is necessary to develop new products to solve the above shortcomings and problems. [New content] The main purpose of this creation is to provide the optical axis of the five parallel lasers, which is simple and inexpensive. The purpose of this creation is to provide a five-parallel laser beam with an optical axis adjustment of only the clothing, and its optical axis adjustment is simple and fast. The purpose of this creation is to make a school device that can be mass produced. The first axis of the beam is the first axis of the beam. The purpose of the invention is to provide the first axis of the five parallel beams. It is only suitable for the adjustment of complex optical systems. The utility model provides an optical axis adjusting device for a five-parallel laser beam, which comprises: a main body of the adjusting device, a small U., /, a clothing surface and a reference surface, the device 6 M330478 surface Having a virtual center point, a first virtual axis and a second virtual axis, the first and second virtual axes are perpendicular to the virtual center point, the reference plane is perpendicular to the horizontal line; ' • a semiconductor laser part, The method includes: a “semi-semiconductor laser unit” disposed on the dysfunctional surface, recorded on the virtual center point, the first semiconductor laser emitting unit emits a first-laser beam, the first laser beam system Vertically the reference surface·, • - the second rotating body portion is disposed on the _ device surface and located on the first virtual axis to the left of the virtual center point; the second semiconductor laser portion emits a second ray a second laser beam is parallel to the first laser beam; a second semiconductor laser portion is disposed on the surface of the device, on a first virtual axis to the right of the virtual center point; The third semiconductor laser beam emits a third laser beam, which is flattened by the third laser beam The first laser beam is mounted on the second virtual axis of the virtual towel, and the fourth semiconductor laser is issued on the second virtual axis. 4. The laser beam 'the fourth laser beam is parallel to the first-laser beam; - the fifth semiconductor laser portion' is disposed on the surface of the device and is located at a second virtual axis below the virtual center point The fifth semiconductor laser emits a fifth laser beam that is parallel to the first laser beam. The above objects and advantages of the present invention are not difficult to obtain in-depth understanding from the detailed description of the embodiment and the drawings. The following examples and detailed descriptions of the present invention will be described in detail. 7 M330478 [Embodiment] Referring to the first figure, the present invention is composed of: - an optical axis adjustment of a five parallel laser beam
一調校裝置主體1G，係具有_裝置面丨丨及― 褒置面11上具有—虛擬中傾A、—第—虛擬軸X及’咸 軸Y’該第-、第二虛擬軸χ與γ係相互垂直於該虛擬虛擬 該參考面12與水平線呈垂直； 、點八， 一半導體雷射部20，係包括： 一第一半導體雷射部21，係設於該裝置面u 且位於該 虛擬中心點A上，該第—半導體雷射部21係發出_第—雷射，Λ 211 ’該第一雷射光束211係垂直該參考面12 ; 、束 一第二半導體雷射部22，係設於該裝置面u上，且位於1 虛擬中心點A左邊的第—虛擬軸X上；該第二半導體雷射部= 係發出一第二雷射光束221，該第二雷射光束221係平行該第一 + 射光束211; ^ ^ 一第二半導體雷射部23，係設於該裝置面η上，且位於該 虛擬中心點A右邊的第一虛擬軸x上；該第三半導體雷射部幻 係發出一第三雷射光束231，該第三雷射光束231係平行該第一♦ 射光束211; ^ 一第四半導體雷射部24，係設於該裝置面η上，且位於兮 虛擬中心點A上邊的第二虛擬軸γ上；該第四半導體雷射部％ 係發出一第四雷射光束241，該第四雷射光束241係平行該第一 + 8 M330478 射光束211; _ -第五轉體雷射部25，係設於該裝置面u上，且位於兮 虛擬中心點A下邊的第虛擬 係發出—第五雷射光東251H該第五半導體雷射部25 射光束21丨。束該紅雷射先束⑸齡行該第-雷 =此為本創作之五平行雷射光束之光軸雛裝置。 ❿ 貝務上如弟—圖所示，本創作又包括· 一光學基部30，其且有一工作$ ^ 工作面倍m 作面31及一虛擬移動方向D ;該 '、合—斜儀姑辨）；賴錄置主體 10係設於縣學基部％上，辦 置主體 該虛擬移動抑D輸該她12。織齡作面儿 40 ’係設_工作面31上， 射部加針之雷射光，該反射部4G係為平面鏡。體雷 D移置知’係設於該工作面31上且可沿該虛擬移動方向 D移動，該針孔裝置％至 垂直於該參考面12。 十孔㈣，雜孔料係保持 半導鱗該第—半導體雷射部21為例(其餘各 行該工作=Γ=)，朗如何使其發紅雷射光平 先’配合水平儀確認該光學基部3〇之工作㈣呈水平。 再財平财賴雛錢轉 於該工作面31。 / 1囬U確實垂直 9 M33 0478 Μ啟動該第-半導體雷射部2卜使其朝該反射部4G發出第 一雷射光束211 〇 [d] 在該光學基部3〇駐作面31上，將該針孔裝㈣之針 孔部5i移至(上下前後調整)剛好使該第一雷射光束2ιι垂直(確認 第-雷射光束211確實垂直射入該針孔部M是經過該針孔部η 中心後的光束’產賴形繞射圖樣)通過的位置並將其定義為一 第一位置P1。 [e] 再來，沿該虛擬移動方向D，將該針孔部51纟該第一位 置P1移動到第一位置P2(當然可以再前後移動到不同的位置）， 同樣確認該通過該針孔部51㈣一雷射光束211都產生圓形繞射 圖樣。 Μ最後，調整該反射部40(例如調整其x與γ方向），使目視 該針孔部51 ’即可確纏第一雷射光束211照射於該反射部4〇上 的入射光與反縣，其祕-致，如此即可確認該第-雷射光束 211(亦即該第一半導體雷射部21)已被調校至平行該光學基部3〇 的工作面31。 同理，可改變該針孔裝置之針孔部的位置，或是改變其餘各 半‘體雷射部的位置，其使兩者相對應，即可同以上述[a]至[f]的 過程’達到調校各半導體雷射部發出雷射光皆與第一雷射光束211 平行之準確性。 之後’如第四圖所示，可進一步再應用於一離轴拋物面鏡6〇 光車由調奴’進行調校之前，先利用一平面鏡(即反射部40)確認該調 M330478 :體1G上的三個平行光束(例如為第-雷射光束21V、第四 田射光241與第五第雷射光束251)為互相平行(配合參閱第二及 第三圖）’其方法為置平面鏡於三辦行光束之前，讓三個平行光 束垂直平面鏡，概観平面鏡使三辦行絲反射光 /口射光返b果確認二個平行光束的反射光與三個平行光束 入射光致即重合’表不此三個平行光束為互相平行。 參閱第五®，進行離軸拋物面鏡60之『垂直方向』調整㈣ 或XZ平面）： [a] 標出該離軸樾物面鏡6〇之幾何中心(例如以兩正交細絲黏 貼於該離軸拋物面鏡60之邊緣）。 [b] 調整雷射光束平行該光學基部3〇之工作面31(參閱第二及 第三圖），且使雷射光束射向離軸拋物面鏡6〇，假設第一雷射光束 211射入該離轴拋物面鏡60之幾何中心，而第五雷射光束251射 向該離軸拋物面鏡60之邊緣；用一固定高度之針孔(pinh〇le)(即該 針孔部51)於該光學基部30之工作面31上移動，以分別確認該第 一、第五雷射光束211與251分別被調校平行於該光學基部30之 工作面31。 [c] 調整該離軸拋物面鏡60之俯仰角度(繞X軸向上或向下頃 斜），同樣再用該固定高度之針孔部51，確認第一雷射光束211之 反射光束與入射光束於該光學基部30之工作面31上呈同一水平 南度。 [d] 同步驟(c)方法，確認第五雷射光束251之反射光束與入射 M330478 光束於該光學基部3〇之I作面S1上呈同_水平高度。 [e] 第，雷射光束251之反射光束如太高，則降低該離軸抛物 面鏡60之南度；反之若太低，則升高該離轴拋物面鏡⑽之高度。 [f] 重覆[d]與[e]步驟，使第一、第五雷射光束211與251的入 射光束及反射光束_光部3G之玉作面31上轉同一水平 高度。 參閱第六® ’係水平方向調整(X轴或yz平面)之過程：A calibration apparatus main body 1G has a _device surface 丨丨 and a 虚拟 面 surface 11 having a virtual mid-dip A, a first-virtual axis X, and a 'salty axis Y'. The first and second virtual axes are The gamma ray is perpendicular to the imaginary virtual reference plane 12 and is perpendicular to the horizontal line; a point VIII, a semiconductor laser portion 20, comprising: a first semiconductor laser portion 21 disposed on the device surface u and located at the At the virtual center point A, the first semiconductor laser portion 21 emits a _th-laser, Λ 211 'the first laser beam 211 is perpendicular to the reference surface 12; the beam-second semiconductor laser portion 22, It is disposed on the device surface u and is located on the first virtual axis X to the left of the virtual center point A; the second semiconductor laser portion is configured to emit a second laser beam 221, and the second laser beam 221 Parallel to the first + beam 211; ^ ^ a second semiconductor laser portion 23, disposed on the device surface η, and located on the first virtual axis x to the right of the virtual center point A; the third semiconductor The laser phantom emits a third laser beam 231, the third laser beam 231 being parallel to the first illuminating beam 211; The fourth semiconductor laser portion 24 is disposed on the device surface η and located on the second virtual axis γ on the virtual virtual center point A; the fourth semiconductor laser portion emits a fourth laser beam 241 The fourth laser beam 241 is parallel to the first + 8 M330478 beam 211; _ - the fifth rotor portion 25 is disposed on the device surface u and is located below the virtual center point A The virtual system emits a fifth laser light 251H, and the fifth semiconductor laser portion 25 emits a light beam 21丨. The red laser first beam (5) ages the first-ray = this is the optical axis device of the five parallel laser beams. ❿ ❿ ❿ — — — — - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - ); Lai recorded the main body 10 is set on the base of the county school, the main body of the virtual movement, D loses her. The woven age face 40 ′ is set on the working surface 31, and the laser beam is added to the shooting portion, and the reflecting portion 4G is a plane mirror. The body Ray D is disposed on the working surface 31 and is movable along the virtual moving direction D, the pinhole device being % to be perpendicular to the reference surface 12. Ten holes (four), the microporous material system maintains the semi-conductive scale. The first semiconductor laser portion 21 is taken as an example (the rest of the lines work = Γ =), how to make it red-emitting laser light first - the level is confirmed with the level to confirm the optical base 3 The work of 〇 (4) is level. Re-finance money will be transferred to the work surface 31. /1 back U is indeed vertical 9 M33 0478 Μ, the first semiconductor laser portion 2 is activated to emit a first laser beam 211 〇 [d] toward the reflecting portion 4G, and the optical base portion 3 is placed on the surface 31, Moving the pinhole portion 5i of the pinhole assembly (4) to (up and down adjustment) just makes the first laser beam 2 ι vertical (confirm that the first laser beam 211 is perpendicularly incident into the pinhole portion M through the pinhole) The position of the beam after the center of the η 'produces the diffraction pattern is passed and defines it as a first position P1. [e] Then, in the virtual movement direction D, the pinhole portion 51 is moved to the first position P1 to the first position P2 (of course, it is possible to move back and forth to a different position), and it is also confirmed that the pinhole is passed through the pinhole. A portion 51 (four) of a laser beam 211 produces a circular diffraction pattern. Finally, the reflection portion 40 is adjusted (for example, the x and γ directions are adjusted) so that the pinhole portion 51' can be visually observed to entangle the incident light of the first laser beam 211 on the reflection portion 4 and the anti-county Thus, it can be confirmed that the first-laser beam 211 (i.e., the first semiconductor laser portion 21) has been calibrated to the working surface 31 parallel to the optical base 3''. Similarly, the position of the pinhole portion of the pinhole device can be changed, or the positions of the remaining half-body laser portions can be changed, so that the two can correspond to each other, and the above [a] to [f] can be used. The process 'accurately adjusts the accuracy of the laser light emitted by each of the semiconductor lasers in parallel with the first laser beam 211. After that, as shown in the fourth figure, it can be further applied to an off-axis parabolic mirror. 6 Before the tuning is performed by the slave, the plane mirror (ie, the reflection portion 40) is used to confirm the adjustment of the M330478: on the body 1G. The three parallel beams (for example, the first-laser beam 21V, the fourth field beam 241, and the fifth first laser beam 251) are parallel to each other (refer to the second and third figures) (the method is to set the plane mirror to three) Before running the beam, let the three parallel beams be perpendicular to the plane mirror. The plane mirror is used to make the three lines of the reflected light/portal light return. It is confirmed that the reflected light of the two parallel beams coincides with the incident light of the three parallel beams. The three parallel beams are parallel to each other. Refer to the fifth® for the “vertical” adjustment of the off-axis parabolic mirror 60 (4) or the XZ plane): [a] Mark the geometric center of the off-axis object mirror 6〇 (eg with two orthogonal filaments attached to it) The edge of the off-axis parabolic mirror 60). [b] adjusting the laser beam parallel to the working surface 31 of the optical base 3 (see second and third figures) and directing the laser beam toward the off-axis parabolic mirror 6 〇, assuming that the first laser beam 211 is incident The geometric center of the off-axis parabolic mirror 60, and the fifth laser beam 251 is directed toward the edge of the off-axis parabolic mirror 60; a pinhole (ie, the pinhole portion 51) is attached to the fixed height The working surface 31 of the optical base 30 is moved to confirm that the first and fifth laser beams 211 and 251 are respectively aligned parallel to the working surface 31 of the optical base 30. [c] Adjusting the pitch angle of the off-axis parabolic mirror 60 (upward or downward in the X-axis direction), and again using the pinhole portion 51 of the fixed height, confirming the reflected beam and the incident beam of the first laser beam 211 The working surface 31 of the optical base 30 has the same horizontal southness. [d] In the same manner as in the step (c), it is confirmed that the reflected beam of the fifth laser beam 251 and the incident M330478 beam are at the same level as the surface S1 of the optical base 3I. [e] First, if the reflected beam of the laser beam 251 is too high, the south of the off-axis parabolic mirror 60 is lowered; if it is too low, the height of the off-axis parabolic mirror (10) is raised. [f] Repeating the [d] and [e] steps, the incident beam of the first and fifth laser beams 211 and 251 and the jade face 31 of the reflected beam _light portion 3G are turned up by the same level. See the sixth ® ′ system for horizontal adjustment (X-axis or yz plane):
[a]該第-、第五雷射光束211與2M的入射光束雖然在該光 學基部3G上維翻-水平高度，但不—定平行於該離軸抛物面鏡 60之光軸，所以必須再做水平方向調整。 μ於該第-、第五雷射光束211與2S1的反射光束交會點處 設反射部40。 Μ調整(或旋轉)該反射部40，得一反射光束41，該反射光束 41打在離軸拋物面鏡60上的光點，則介於該第一、第五雷射光束 211與251之入射光束打在該離軸拋物面鏡6〇上的光點之間。 [d] 以前述之針孔部51去確認該反射光束41平行該光學基部 30之工作面31 ;並轉認該反射光束41與該第一、第五雷射光束 211與251之入射光束位於同一水平高度。 [e] 反射光束41如果偏上(天花板），調整(繞y _時鐘或逆 時鐘旋轉)該離軸拋物面鏡60;使該第一、第五雷射光束2丨丨與％工 之入射光束往小入射角方向；反射光束41如果射向下(光學桌面）， 调整(繞y轴逆時鐘旋轉)離軸抛物面鏡6〇使該第_、望+ 乐五雷射光 12 M330478 束211與251之入射光束往大入射角方向。 [q重覆[b]至[e]，直到該反射光束41平行該光學基部3〇，微 調(或旋轉)該反射部40,直到該反射光束41與該第一雷射光束211 之入射光束完全重合，此時該第一、第五雷射光束2Π與251之 入射光束已被聚焦至該離軸拋物面鏡60之焦點位置。 利用本創作之複數個雷射平行光束，透過上述垂直與水平調 校過程；完成離軸拋物面鏡60調校之後，此時該調校裝置主體 上的五個雷射光束(21卜22卜23卜24卜251)應該聚於一點，此 點即該離軸拋物面鏡60的焦點，此時可進一步再用雷射測距儀量 出該離軸拋物面鏡60之焦距及離軸角度。如果五條雷射平行光束 沒有聚於一點，上述垂直與水平調校過程應重新執行。 利用本創作之調校裝置主體進行實_試結果，光軸調校精 度可達到焦距在2%，以及離軸角度在3〇/〇。 以上兩個範例僅麟調校光軸，但是本創作還可應用 領域： ' [a] 光學儀器：1·干涉儀、2·光譜儀、&光學測試台。 [b] 光學器材：i•大型天文望遠鏡、z顯微鏡。 [c] 兩軸工作母機。 本創作之優點及功效如下所述： 相當簡單而價格便宜 置面[^42單且價格便宜。本創作只需在—調校裝置主體的裝 個半導體雷射部，即可以進行雜校正作業，設備 13 M330478 光細減倾速。卩、絲雛織主體畔考面垂直於 水平線’再·五個雷射縣皆相互平行射纽參考面，即可 以相互平行的五個雷射光束進行光軸調校，過程簡單且快速。 [3] 可大量生產。摘作結構相賴單’主要是在—相當單純 的調校裝置主體上設置五個半導體雷射部，故，極適於大量^產。 [4] 適用於複雜光料_雛。本創作只要調校五個雷射光 束相互平行㈤時平行水平線），且垂直於調校裝置主體的參考面 ⑽夺垂直水平線），即將複雜的光學系統調校，簡化到以五個 之雷射光束進行精確的光軸調校。 以上f ^較__、_本_，對於該實施例所 做的任何間早修改與變化，皆不脫離本創作之精神與範圍。 π由让詳^柳，可使熟知本項技藝者明瞭本創作的確可達 别这目的’實已符合專利法之規定’爰提出新型專利申請。 14 M330478 【圖式簡單說明】 第一圖係本創作之示意圖 第二圖係本創作之應用實施例示意圖 - 第三圖係第二圖之平面示意圖 第四圖係本創作應用於離軸拋物面鏡光軸調校過程之一示意圖 第五圖係本創作應用於離軸拋物面鏡光軸調校過程之二示意圖 第六圖係本創作應用於離軸拋物面鏡光軸調校過程之三示意圖 • 【主要元件符號說明】 10調校裝置主體 11裝置面 20半導體雷射部 211第一雷射光束 221第二雷射光束 231第三雷射光束 241第四雷射光束 251第五雷射光束 31工作面 41反射光束 51針孔部 A虛擬中心點 Y第二虛擬軸 P1第一位置 12參考面 21第一半導體雷射部 22第二半導體雷射部 23第三半導體雷射部 24第四半導體雷射部 25第五半導體雷射部 30光學基部 40反射部 50針孔裝置 60離軸拋物面鏡 X第一虛擬轴 D虛擬移動方向 P2第二位置 15[a] Although the incident beams of the first and fifth laser beams 211 and 2M are turned over-horizontal on the optical base 3G, they are not parallel to the optical axis of the off-axis parabolic mirror 60, so it is necessary to Make horizontal adjustments. The reflection portion 40 is provided at the intersection of the reflected beam of the first and fifth laser beams 211 and 2S1. Μ adjusting (or rotating) the reflecting portion 40 to obtain a reflected beam 41, the spot of which is struck on the off-axis parabolic mirror 60, and incident between the first and fifth laser beams 211 and 251 The beam strikes between the spots on the off-axis parabolic mirror 6〇. [d] confirming that the reflected beam 41 is parallel to the working surface 31 of the optical base 30 by the aforementioned pinhole portion 51; and recognizing that the reflected beam 41 is located at the incident beam of the first and fifth laser beams 211 and 251 The same level. [e] If the reflected beam 41 is biased (ceiling), adjust (rotate around y_clock or counterclockwise) the off-axis parabolic mirror 60; make the first and fifth laser beams 2 丨丨 and % incident beam To the direction of small incident angle; if the reflected beam 41 is shot downward (optical tabletop), adjust (rotate clockwise around the y-axis) off-axis parabolic mirror 6〇 to make the _, 望+ 乐五雷光光12 M330478 bundle 211 and 251 The incident beam is directed toward a large angle of incidence. [q repeats [b] to [e] until the reflected beam 41 is parallel to the optical base 3〇, fine-tuning (or rotating) the reflecting portion 40 until the incident beam of the reflected beam 41 and the first laser beam 211 Fully coincident, at this time, the incident beams of the first and fifth laser beams 2 Π and 251 have been focused to the focus position of the off-axis parabolic mirror 60. Using the plurality of laser parallel beams of the creation, through the above vertical and horizontal adjustment process; after the off-axis parabolic mirror 60 is adjusted, at this time, the five laser beams on the main body of the adjustment device (21b 22b 23) Bu 24 251) should be concentrated at a point, that is, the focus of the off-axis parabolic mirror 60, at which time the focal length and off-axis angle of the off-axis parabolic mirror 60 can be further measured by the laser range finder. If the five laser parallel beams are not concentrated, the above vertical and horizontal adjustment process should be re-executed. Using the main body of the calibration device of this creation, the optical axis adjustment accuracy can reach 2% of the focal length and 3〇/〇 from the off-axis angle. The above two examples only adjust the optical axis, but this creation can also be applied in the field: ' [a] Optical instruments: 1 · Interferometer, 2 · Spectrometer, & optical test bench. [b] Optical equipment: i • large astronomical telescope, z microscope. [c] Two-axis working machine. The advantages and effects of this creation are as follows: Quite simple and inexpensive. Set [^42 single and cheap. This creation only needs to be equipped with a semiconductor laser part of the main body of the calibration device, that is, the misalignment operation can be performed, and the device 13 M330478 lightly reduces the tilting speed. The test surface of the main body of silk and silk is perpendicular to the horizontal line. Then, the five laser shots are parallel to each other, and the optical axes can be adjusted with five laser beams parallel to each other. The process is simple and fast. [3] It can be mass produced. The structure of the structure is similar to that of the relatively simple adjustment device, and five semiconductor laser sections are provided. Therefore, it is highly suitable for mass production. [4] Applicable to complex light materials. In this creation, as long as the five laser beams are parallel to each other (five horizontal parallel lines) and perpendicular to the reference plane (10) of the main body of the calibration device, the complex optical system is calibrated to five lasers. The beam is precisely tuned to the optical axis. The above f ^ is more than __, _ _, and any modifications and variations made to the embodiment are not departing from the spirit and scope of the present invention. π by letting the details of the willow, can make the skilled person know that the creation of this creation can indeed achieve this purpose, which has already met the requirements of the Patent Law. 14 M330478 [Simple description of the diagram] The first diagram is a schematic diagram of the creation. The second diagram is a schematic diagram of the application example of the creation. The third diagram is the schematic diagram of the second diagram. The fourth diagram is the application of the creation to the off-axis parabolic mirror. The fifth diagram of the optical axis adjustment process is the second diagram of the application of the off-axis parabolic mirror optical axis adjustment process. The sixth diagram is the third schematic diagram of the application of the off-axis parabolic mirror optical axis adjustment process. Main component symbol description] 10 calibration device main body 11 device surface 20 semiconductor laser portion 211 first laser beam 221 second laser beam 231 third laser beam 241 fourth laser beam 251 fifth laser beam 31 Face 41 reflected light beam 51 pinhole portion A virtual center point Y second virtual axis P1 first position 12 reference surface 21 first semiconductor laser portion 22 second semiconductor laser portion 23 third semiconductor laser portion 24 fourth semiconductor mine Shooting portion 25 fifth semiconductor laser portion 30 optical base portion 40 reflecting portion 50 pinhole device 60 off-axis parabolic mirror X first virtual axis D virtual moving direction P2 second position 15