TWM321906U - Single crystal growth device and inner single crystal reaction tank thereof - Google Patents

Single crystal growth device and inner single crystal reaction tank thereof Download PDF

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Publication number
TWM321906U
TWM321906U TW96204257U TW96204257U TWM321906U TW M321906 U TWM321906 U TW M321906U TW 96204257 U TW96204257 U TW 96204257U TW 96204257 U TW96204257 U TW 96204257U TW M321906 U TWM321906 U TW M321906U
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Taiwan
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single crystal
reaction tank
raw materials
growth apparatus
crystal growth
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TW96204257U
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Chinese (zh)
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Wen-Ching Shiu
Jau-Kuen Shie
Ching-Li Cheng
Sz-Hua He
Yu-Ren Wan
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Sino American Silicon Products
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Priority to TW96204257U priority Critical patent/TWM321906U/en
Publication of TWM321906U publication Critical patent/TWM321906U/en

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Description

M321906 八、新型說明: 【新型所屬之技術領域】M321906 Eight, new description: [New technology field]

本創作係有關-種晶體成長裝置及其反麟體,制是有關—種單晶成長 裝置及其内部之單晶反應槽體。 【先前技術】 近年來’半導體電子元件以及太陽能基板需求與日倶增,且隨著產品世代 '不斷地推陳出新’對於單-結晶結構之稽料的純度要求亦日趨嚴格,在一般 馨習知的單晶養料成長方法中,較為常見的有柴氏長晶法(cz〇chraiskiM础⑷ 與浮熔帶長晶法(Fl〇atingZ〇neTechnique),其中,請參考第一圖所示,柴氏長 晶法的主要步驟係利用石夕金屬u在石英掛禍12中,利用加熱器14以加熱融化, 再將晶種插人飾、旋轉、上在減室财逐漸提拉出單㈣棒,而浮炼 帶長晶法的主要步驟則是先將一多晶石夕棒通過環帶狀加熱器以產生局部融化的 現象’在㈣翻過顧產生單晶雜,然而,因為柴氏長晶法所之製雜為 簡單’且生產之成本較低,同時,相較於浮熔帶長晶法而言,柴氏長晶法所製 φ成之單晶石夕棒可具有較大的晶棒尺寸,因此,在大部分的電子元件製造卜多 -利用柴氏長晶法以製造出大尺寸、高產出率、高機械強度的單晶石夕棒。 卜雖然,利用柴氏長晶法所製作出的單晶石夕棒具有上述種種之優點,但其所 製成之單晶石夕棒的純度並不如浮溶帶長晶法所製成之單晶石夕棒的純度,其中,This creation is related to a kind of crystal growth device and its anti-nuclear body. The system is related to a single crystal growth device and a single crystal reaction tank body therein. [Prior Art] In recent years, the demand for semiconductor electronic components and solar substrates has increased steadily, and with the product generation 'continuously innovating new', the purity requirements for the single-crystal structure are becoming stricter and stricter. Among the single crystal nutrient growth methods, the Czochralski crystal method (Cz氏chraiskiM base (4) and the floating melting zone crystal growth method (Fl〇atingZ〇neTechnique), among which, please refer to the first figure, Chai’s length The main step of the crystallization method is to use the Shixi metal u in the quartz smashing 12, and use the heater 14 to heat and melt, and then insert the crystal seed into the decoration, rotate, and gradually extract the single (four) rod in the room. The main step of the floatation process is to first pass a polycrystalline stone rod through a banded heater to produce a local melting phenomenon. The preparation is simple and the production cost is low. At the same time, compared with the floating-melt crystal growth method, the single crystal stone rod made by the Chai's long crystal method can have a larger ingot. Size, therefore, in most electronic components manufacturing - The use of the Chai's long crystal method to produce a large-sized, high-yield, high-mechanical single-crystal shovel rod. Although, the single crystal shovel rod produced by the Chai's long-crystal method has the above various kinds. The advantage is that the purity of the single crystal stone rod made by the float is not the purity of the single crystal stone rod made by the floating strip growth method, wherein

。因此,本創作係有鑑於上述之問題 單晶成長裝置及其内部之單晶反應槽體以降低單晶 純物污染之機會。 你馬氧,且氧分子則係為電 :於上述之問題,係提出一種 石夕棒在製造的過程中受到不 M321906 0 修正 補无 【新型内容】 本創作之主要目的,係在提供一種單晶成長裝置及其内部之單晶反應槽 體’其在承載單晶轉原材料之卿的承載界面上形成至少_阻絕層,以降低 _與原材料之間因高溫環境而產生副反應之機率。 首先,根據本創作所揭露之單晶反應槽體可知,其係包括一反應器本體以 及至少阻絕層,在反應器本體上係具有至少一容置空間以用來承載複數單晶 石夕原材料,而阻絕層則係形成於反應器本體之容置空_承載界面上,且阻絕 拳層係可以用來隔絕單晶石夕原材料與反應器本體之直接接觸,使得此些單晶石夕原 材料在進行高溫反應時不會受到反應器本體之影響。 另外’根據本創作所揭露之單晶成長裝置可知,其係包括一單晶反應槽體、 -加熱器以及-拉晶室’在單晶反應槽體的反應器本體中係具有至少一容置空 間’利用此容置空間以錄承_以生產單晶雜之原材料,由於在製造單晶 石夕棒時’承載在容置空間内的原材料必須經由單晶反應槽體外圍之加熱器以使 得原材娜融’因此,為了避免反魅本體與原材料之間在高溫下產生過多的 .副反應’故在反應器本體中,至少在容置空間的承載界面上係形成有至少一層 -的阻絕層’由於阻隔層的材料係選自與熔融石夕不濕化(wetti帕且具高溫穩定性 的材質例如氮石夕化物或碳石夕化物等,因此阻隔層並不會在高溫下與原材料進行 反應,也·可以隔絕此些原材料與反魅本體發生直接的接觸而避免不必要 之副反應的產生,因錢得最終經過單晶成辣置的拉晶室所提拉出的石夕晶棒 中不純物之含量便可大幅降低。 底下藉由具體實施例配合__式詳錢明,#更容_解本創作之目 的、技術内容、特點及其所達成之功效。 6. Therefore, the present invention has a single crystal growth apparatus and a single crystal reaction tank inside thereof in view of the above problems to reduce the chance of contamination of single crystal pure matter. You are horse oxygen, and the oxygen molecule is electricity: in the above problem, it is proposed that a stone stalk is not corrected by M321906 0 during the manufacturing process. [New content] The main purpose of this creation is to provide a single The crystal growth apparatus and the single crystal reaction tank inside thereof form at least a barrier layer on the bearing interface of the substrate carrying the single crystal conversion raw material to reduce the probability of side reaction between the raw material and the raw material due to the high temperature environment. First, according to the single crystal reaction tank disclosed in the present invention, the reactor body includes a reactor body and at least a barrier layer, and the reactor body has at least one accommodating space for carrying a plurality of single crystal raw materials. The barrier layer is formed on the space-bearing interface of the reactor body, and the barrier layer can be used to isolate the direct contact between the single crystal raw material and the reactor body, so that the single crystal raw materials are The high temperature reaction is not affected by the reactor body. In addition, according to the single crystal growth apparatus disclosed in the present invention, the system includes a single crystal reaction tank body, a heater, and a pull chamber, and has at least one accommodation in the reactor body of the single crystal reaction tank body. The space 'utilizes this accommodating space to record _ to produce a single crystal impurity raw material, because the raw material carried in the accommodating space must pass through the heater of the periphery of the single crystal reaction tank body in the manufacture of the single crystal slab In the original material, Na Rong's, therefore, in order to avoid excessive reaction between the anti-enchant body and the raw material at high temperatures, in the reactor body, at least one layer is formed at the bearing interface of the accommodating space. The layer 'because the material of the barrier layer is selected from the material that is not wetted with the molten stone (wettipa and high temperature stability materials such as nitrogen lithium or carbon stone, etc., so the barrier layer does not react with the raw material at high temperatures. The reaction is carried out, and it is also possible to isolate the raw materials from direct contact with the anti-enchantment body and avoid unnecessary side reactions, because the money is finally pulled out by the crystal pulling chamber of the single crystal. The content of impurities in the ingot can be greatly reduced. Under the exemplification of the specific example, __Details Qian Ming, #更容_ The purpose of this creation, the technical content, characteristics and the effects achieved.

M321906 【實施方式】 …本創作係提供-種單晶成長裝置及其内部之單晶反應槽體 ,其係將用以承 載單晶㈣材料之靡本體的承載界面進行表面處理,以有效降低單晶石夕棒 中不純物之含量。町,時提供摘叙實祕樣及其姉紅圖式,以 詳細解釋本創作之主要精神與技術特徵。 明參考第—圖所不’其係為本創作之單晶成長裝置的截面結構示意圖,不 過,百先先以其中的單晶反應槽體22為主加以說明,在此單晶反應槽體U中 係包闊-反絲本體,且在其巾設置有_容_怨,且在容置空間的表面上 係形成有一阻絕層223。 因此,基於上述的單晶反應槽體22的結構可知,並請繼續參考第二圖所示, 在此單晶絲裝置中係包括—單晶反應_22,此單晶反應槽體22係包括一反 應器本體,在本實補樣愼石英與22卜且在此石英师21中係設置一 容置空間222以用來承載用以製作單騎棒之單晶材料21,更在此容置空M321906 [Embodiment] The present invention provides a single crystal growth device and a single crystal reaction tank body therein, which is used for surface treatment of a bearing interface of a crucible body for carrying a single crystal (four) material, so as to effectively reduce the single The content of impurities in the spar. The town provides a detailed description of the secret and its blush pattern to explain in detail the main spirit and technical features of the creation. The reference to Fig. 1 is a schematic diagram of the cross-sectional structure of the single crystal growth device of the present invention. However, the first embodiment of the single crystal reaction cell 22 is mainly described herein, and the single crystal reaction cell body U is described herein. The middle sleeve is wide-reverse, and the towel is provided with a suffocating layer, and a barrier layer 223 is formed on the surface of the accommodating space. Therefore, based on the structure of the single crystal reaction tank body 22 described above, and referring to the second figure, the single crystal wire device includes a single crystal reaction_22, and the single crystal reaction tank body 22 includes a reactor body, in the present embodiment, a quartz and 22, and in the quartz division 21, an accommodation space 222 is provided for carrying the single crystal material 21 for making a single riding rod, and is further accommodated therein. air

間222與此些單靖、材料21接觸的承載界面上形成—阻騎挪,另外,在 此單晶反麟㈣之係設置―加絲%,耐單晶反賴體22的上謂 是設置-拉晶室2G。因此’當石英· 221的容置空謂内已填裝入適量的 單晶石夕原㈣21後,先體單晶成錄置進行抽真空 ’再透過加熱器24以 將主要用錢行反應之石英_ 221的溫度提昇至攝氏丨度以上並維持一 定的加熱時間以使石英與221内的單峨材料21逐漸熔融,直到所有單晶 石夕原材料2i皆完全炫融後,係利用拉晶室2〇中一單晶晶種以適當的速度進行 提拉出-單㈣棒物部,並在有錄去晶_械加工成科導朗塑性變形 之缺陷、晶種接觸炫融液而急速加熱之缺陷...等等缺陷後,重新調整加熱器別 M321906 jit ' 的供熱效率與拉晶室20中B錄iS μ 1補 -以達到^ Γ 的速度,逐漸增大提拉單 疋之目祕後’盡可能將單晶石夕棒提拉速度維持在一定的範圍内,再 加編4鳴嫩提㈣㈣21 _綱伽融液逐漸 減>所迈成之散熱速率加快的問題。 因此,由上述的單晶石夕棒製程流程中可知,在加熱器24將石細職中 的御娜21妨料,翁·_加_纖概氏_ 度,不過因為石細221的主要材料亦是為石夕,因而在習知的技術中,石英 -中雜的早Ba碎原材料21通常會遭遇到部分游離自石英糊⑵本身 的不純物’例如:氧分子,不過,由於在本創作中的石英關⑵的容置空間 222内壁上係形成一阻絕層挪,且此阻絕請的材料為魏化物或碳氮化 *因此相對於早曰曰石夕原材料21的溶點而言石夕氮化物或是碳氮化物的魅 白门;單日日夕原材料21,以氮化石夕為例,其炼點約在攝氏麵度左右係高於單 晶_料21之加鱗融溫度,故,在攝氏i度的環境下,此熱穩定 性高的阻絕層223以阻隔炼融的單_材料21與石英·21之間的直接接 觸’因此可降低游離自石英掛禍221本身的不純物質,進而提升所製成之單晶 梦棒純度。 而上述的阻絕層形成於石英職之表面的方法可透過塗佈、氣相沈積、電 漿等等方式以實現。且,除了可在石英掛禍的容置空間内形成阻絕層外,亦 可依據不_需求上述的方法以在整體石細_外表面皆形成阻隔層。 因此本創作所揭不之單晶成長裝置係棚以承載熔融單晶齊材料的反 應器本體之容置空間内形成至少—阻絕層,且此阻絕層的材料係選自於梦的氮 化物或疋碳缝化物’彻較高的材舰點⑽免單晶魏材料在進行溶融時 8 M321906 h月。督 、受到來自反顏本體騎出料純物質污染,,致最㈣單晶^ 的問題。 以上所述貫關僅係為說明本創作之技術思想及特點,其目的在使熟悉此 項技藝之人士能_解本創作之内容並據以實施,#不能以之限定本創作之專 利範圍,即大凡依本卿所鮮之精神所作之均等變滅修飾,麵涵蓋在本 創作之專利範圍内。 【圖式簡單說明】 _第-圖為習知之單晶成長裝置的截面結構示_。 第二圖為本創作之單晶成長裝置的戴面結構示意圖。 【主要元件符號說明】 10拉晶室 14加熱器 20拉晶室 221石英坩堝 φ 223阻絕層 -21單晶矽原材料 12石英坩堝 Η矽金屬 22單晶反應槽體 222容置空間 24加熱器 9The 222 is formed on the bearing interface which is in contact with the monosodium and the material 21, and is set to be blocked by the rider. In addition, in the single crystal anti-column (four) system, the wire-adding is set, and the single-crystal resisting body 22 is set. - Pull chamber 2G. Therefore, when the content of quartz 221 is filled with an appropriate amount of single crystal stone (4) 21, the precursor single crystal is recorded and vacuumed and then transmitted through the heater 24 to react mainly with money. The temperature of the quartz _ 221 is raised above the Celsius temperature and a certain heating time is maintained to gradually melt the quartz and the single bismuth material 21 in the 221 until all the single crystal raw materials 2i are completely glazed, and the pulling chamber is utilized. 2〇Single-crystal seed crystals are pulled out at a suitable speed--single (four) rods, and they are rapidly heated by the defects of the plastic deformation of the crystals. After the defects... and other defects, re-adjust the heating efficiency of the heater M321906 jit ' and the B in the crystal chamber 20 to record iS μ 1 to achieve the speed of ^ Γ, gradually increase the purpose of pulling the single After the secret, try to maintain the lifting speed of the single crystal stone rod in a certain range, and then add the 4 ringing tender (4) (four) 21 _ _ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ Therefore, it can be seen from the above-mentioned single crystal stone rod process flow that in the heater 24, the Yu Na 21 in the stone fine job may be awkward, and the Weng·_plus_fiber is _degree, but the main material of the stone fine 221 It is also for Shi Xi, so in the conventional technique, the quartz-intermediate early Ba shredded raw material 21 usually encounters an impurity which is partially free from the quartz paste (2) itself, for example: oxygen molecules, however, due to the present creation On the inner wall of the accommodating space 222 of the quartz (2), a resistive layer is formed, and the material of the resisting material is fermented or carbonitride*, so the relative point of the raw material 21 of the early 夕石夕Compound or carbonitride charm white door; single day day and night raw material 21, taking the example of nitride rock eve, its refining point is about the temperature above the Celsius surface is higher than the squashing temperature of the single crystal _ material 21, so, In the environment of Celsius i degrees, the thermal stability of the barrier layer 223 to block the direct contact between the smelted single material 21 and the quartz 21 can thus reduce the impurities which are free from the quartz 221 itself, and further Enhance the purity of the single crystal dream bar made. The above method of forming the barrier layer on the surface of the quartz member can be achieved by coating, vapor deposition, plasma or the like. Moreover, in addition to forming a barrier layer in the accommodating space of the quartz smashing, the barrier layer may be formed on the outer surface of the whole stone according to the above method. Therefore, the single crystal growth device disclosed in the present invention forms at least a barrier layer in the accommodating space of the reactor body carrying the molten single crystal material, and the material of the barrier layer is selected from the dream nitride or疋Carbon sulphide's higher material point (10) is free of single crystal Wei material during the melting of 8 M321,906 h. Supervised, subject to the contamination of the pure material from the anti-face body riding, the most (four) single crystal ^ problem. The above description is only for explaining the technical ideas and characteristics of the creation, and the purpose thereof is to enable the person familiar with the art to clarify the content of the creation and implement it according to the fact that # cannot limit the scope of the patent of the creation. That is to say, the equalization of the spirit of the original spirit of the present is in the scope of the patent. [Simple description of the drawing] _The first figure shows the cross-sectional structure of the conventional single crystal growth device. The second figure is a schematic view of the wearing structure of the single crystal growth device of the present invention. [Main component symbol description] 10 pull chamber 14 heater 20 pull chamber 221 quartz 坩埚 φ 223 barrier layer -21 single crystal 矽 raw material 12 quartz 坩埚 Η矽 metal 22 single crystal reaction tank 222 accommodation space 24 heater 9

Claims (1)

‘M321906 九、申請專利範圍: 1. 一種單晶成長裝置,包括: 一單晶反應槽體,用以承載複數單晶矽原材料,且該單晶反應槽體係包括·· 一反應器本體,其係具有至少一容置空間以用來承載該些單晶矽原材 料;以及 至少一阻絕層’其係形成於該反應器本體之該容置空間的承載界面上, 且該阻絕層係用以隔絕該些單晶矽原材料與該反應器本體之直接接觸,使 該些單晶石夕原材料進行高溫反應時不受該反應器本體之影響; 一加熱器,其係設置於該單晶反應槽體之外圍,用以提供熱能使該些單 晶矽原材料得以熔融;以及 -拉晶室,其餘於該單晶反應醜之上方,絲晶室伽以提拉溶融 之該些單晶矽原材料以形成單晶棒。 2. 如申睛專利範圍第μ所述之單晶成長裝置,其中,該反應器本體係為掛禍。 3. 如申請專利範圍第1項所述之單晶成長裝置,其中,該些單騎原材料之成 分係包含矽。 4. 如申請專利範圍第丨項所述之單晶成長裝置,其中,該阻絕層之材料係選自 於氮♦化物或碳碎化物。 、 5·鮮晶成長裝置内部之單晶反應槽體,其係應用於單晶成長裝置中,該單 晶反應槽體係包括·· μ 一反應器本體, 以及 其係具有至少-容置空間以絲承載複數單晶·材料; 至少一阻絕層,其係形成於該反應器本體之該容置 空間的承載界面上, 且'M321906 IX. Patent application scope: 1. A single crystal growth device comprising: a single crystal reaction tank body for carrying a plurality of single crystal germanium raw materials, and the single crystal reaction tank system comprises a reactor body, Having at least one accommodating space for carrying the single crystal germanium raw materials; and at least one resistive layer formed on the bearing interface of the accommodating space of the reactor body, and the resisting layer is used for isolating The single crystal germanium raw materials are in direct contact with the reactor body, so that the single crystal raw materials are not affected by the reactor body when subjected to high temperature reaction; a heater is disposed in the single crystal reaction tank body a periphery for providing heat to enable the single crystal germanium raw materials to be melted; and - a crystal pulling chamber, the rest of which is above the single crystal reaction, and the silk crystal chamber is tempered to melt and melt the single crystal germanium raw materials to form Single crystal rod. 2. The single crystal growth apparatus according to claim [19], wherein the reactor system is a disaster. 3. The single crystal growth apparatus of claim 1, wherein the components of the single riding materials comprise bismuth. 4. The single crystal growth apparatus according to claim 2, wherein the material of the barrier layer is selected from the group consisting of nitrogen compounds or carbon fragments. a single crystal reaction tank inside the fresh crystal growth apparatus, which is applied to a single crystal growth apparatus comprising: a μ reactor body, and the system has at least an accommodation space The wire carries a plurality of single crystal materials; at least one barrier layer formed on the bearing interface of the accommodating space of the reactor body, and 使該些單^ ~ M321906 、該阻絕層係用以隔絕該些單晶石夕原材料與該反應器本體之直接接觸, .晶矽原材料進行高溫反應時不受該反應器本體之影響。 6·如申請專利範圍第5項所述之單晶成長裝置内部之單晶反應槽體,其中,該 反應器本體係為坩渦。 • 7·如申請專利範圍第5項所述之單晶成長裝置内部之單晶反應槽體,其中,該 些單晶矽原材料之成分係包含矽。 8·如申請專利範圍第5項所述之單晶成長裝置内部之單晶反應槽體,其中,該 • 阻絕層之材料係選自於氮矽化物或碳矽化物。The single layer M321906 and the barrier layer are used to isolate the direct contact between the single crystal raw materials and the reactor body, and the crystal raw material is not affected by the reactor body when subjected to high temperature reaction. 6. The single crystal reaction vessel inside the single crystal growth apparatus according to claim 5, wherein the reactor system is a vortex. The single crystal reaction tank body in the single crystal growth apparatus according to claim 5, wherein the components of the single crystal germanium raw materials contain ruthenium. 8. The single crystal reaction cell body in the single crystal growth apparatus according to claim 5, wherein the material of the barrier layer is selected from the group consisting of nitrogen telluride or carbon germanide. M321906 七、指定代表圖: (一) 本案指定代表圖為:第(二)圖。 (二) 本代表圖之元件符號簡單說明: 20拉晶室 22單晶反應槽體 221石英坩堝 222容置空間 223阻絕層 24加熱器 21單晶矽原材料M321906 VII. Designated representative map: (1) The representative representative of the case is: (2). (2) The symbol of the symbol of this representative figure is simple: 20 pull chamber 22 single crystal reaction tank 221 quartz 坩埚 222 accommodating space 223 barrier layer 24 heater 21 single crystal 矽 raw material 44
TW96204257U 2007-03-16 2007-03-16 Single crystal growth device and inner single crystal reaction tank thereof TWM321906U (en)

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