TWM294098U - Thin film bulk acoustic resonator device with a gaas substrate and a algaas buffer layer - Google Patents
Thin film bulk acoustic resonator device with a gaas substrate and a algaas buffer layer Download PDFInfo
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- TWM294098U TWM294098U TW94220243U TW94220243U TWM294098U TW M294098 U TWM294098 U TW M294098U TW 94220243 U TW94220243 U TW 94220243U TW 94220243 U TW94220243 U TW 94220243U TW M294098 U TWM294098 U TW M294098U
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- acoustic wave
- bulk acoustic
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- 239000000758 substrate Substances 0.000 title claims description 42
- 239000010409 thin film Substances 0.000 title claims description 8
- 239000000463 material Substances 0.000 claims description 20
- 239000010408 film Substances 0.000 claims description 12
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical group [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 10
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 125000002524 organometallic group Chemical group 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 2
- OIEXKIFUAWMLSN-UHFFFAOYSA-N N.[K+].[K+].[K+].[K+] Chemical compound N.[K+].[K+].[K+].[K+] OIEXKIFUAWMLSN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 239000000843 powder Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical class OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims 1
- 238000001755 magnetron sputter deposition Methods 0.000 claims 1
- 238000001947 vapour-phase growth Methods 0.000 claims 1
- 238000003780 insertion Methods 0.000 description 6
- 230000037431 insertion Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 238000010897 surface acoustic wave method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 241001164374 Calyx Species 0.000 description 1
- 241000283973 Oryctolagus cuniculus Species 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- -1 potassium oxyhydroxide Chemical compound 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
M294098 八、新型說明： 【新型所屬之技術領域】 本創作係有關於一種薄膜型體聲波元件，其特別有 關於一種使用砷化鎵作為基板及砷化鎵鋁作為支撐層之 薄膜型塊體結構聲波共振器。 【先前技術】 在現代微波通訊系統不但需求良好的通訊品質以及 降低製造成本，糸統的輕薄短小也是追求的目標之一。 隨著單石微波積體電路（mon〇lithic micr〇wave integrated circuit，MMIC)技術的需求，主動電路所占面積快速的 下降。因此，使用於微波通訊系統裡的零組件，也必須 要小型化。傳統製作微波濾波器的方法有利用蛐 件dumped elements)、介電共振器， DR)和表面聲波（surface ac〇ustic職…，saw)等。集總 式兀件型或介電共振器型的濾波器體積都較大，要積體 化較不容易。表面聲波型較器若欲彳㈣低得介入損失 ㈣=〇_ss)則須加大其尺寸。然而，非晶片型（〇ff_chip) 滤波為占面積仍大而且複雜，對整體系統微小化構成障 礙。雖然晶體共振可做為獨立元件且具有不錯的特性， 由表面聲波型濾波器於使用特殊壓電材料，相較於 MMK：電路仍然太大而無法M294098 VIII. New Description: [New Technology Field] This creation is about a film-type bulk acoustic wave component, which is particularly related to a film-type bulk structure using gallium arsenide as a substrate and gallium arsenide aluminum as a support layer. Acoustic resonator. [Prior Art] In the modern microwave communication system, not only the good communication quality but also the manufacturing cost is reduced, and the thinness and shortness of the system is also one of the goals pursued. With the demand for monolithic micr〇wave integrated circuit (MMIC) technology, the area occupied by active circuits is rapidly decreasing. Therefore, components used in microwave communication systems must also be miniaturized. Conventional methods for fabricating microwave filters include the use of dumped elements, dielectric resonators, and surface acoustic waves (surface ac〇ustic jobs, etc.). The lumped element type or dielectric resonator type filter has a large volume, and it is not easy to integrate. If the surface acoustic wave type is less than (4) low, the insertion loss (4) = 〇 _ss) must be increased. However, the non-wafer type (〇ff_chip) filtering is still large and complicated, which poses an obstacle to the miniaturization of the overall system. Although crystal resonance can be used as a stand-alone component and has good characteristics, the surface acoustic wave filter uses a special piezoelectric material, which is still too large to be compared to MMK:
Chip, SOC) 〇 成 m 曰曰片（system onChip, SOC) 〇 into m ( (system on
FE016-P441-TW 5 M294098 薄膜體聲波共振器（thin film bulk acoustic resonator， TFBAR)可以直接製作在矽（Si)或砷化鎵（GaAs)基板上， 因此很適合作為元件。薄膜體聲波諧振濾波器比集總式 兀件與介電共振器有更小的體積；以及比表面聲波型濾 波裔有更小插入損失。TFBAR主要的優點是它比集中元 件 W電型共振裔和表面聲波元件有較小的插入損失 (insertion loss)，同時在相同頻率下TFBAR有較小的體 年貝。除了需濺鍍壓電薄膜以外，它的製程與傳統半導體 製程類似。這些優點使，tfbar很適合與其他高頻元件 做在同一基板而達到單石化的目的。在MMIC的目標下 達到系統型晶片（system on-chip)，更由於元件的大量生 產可更降低製造成本。對於積體電路而言，高頻濾波電 路做在矽（Si)晶片上已是相當普遍的技術。習知之薄膜 型聲波共振器（TFBAR)做在矽上已有文獻可查，主要是 乂石夕為基板，ShN4作為支撐層。然而，以石夕為基板所製 作之溥膜型聲波共振器仍有體積大、高插入損失與不易 整合至高頻高速電路的缺點。 為了解決上述之問題，有需要提供一種使用砷化鎵 作為基板以及砷化鎵鋁作為支撐層之薄膜型塊體結構聲 波共振器。 【新型内容】 本創作之目的在提供一種薄膜型體聲波元件，其係FE016-P441-TW 5 M294098 The thin film bulk acoustic resonator (TFBAR) can be fabricated directly on a bismuth (Si) or gallium arsenide (GaAs) substrate, making it suitable as an element. The film bulk acoustic wave resonator has a smaller volume than the lumped element and the dielectric resonator; and has a smaller insertion loss than the surface acoustic wave type filter. The main advantage of TFBAR is that it has less insertion loss than the concentrated component W-type resonant and surface acoustic wave components, while TFBAR has a smaller body size at the same frequency. In addition to sputtering a piezoelectric film, its process is similar to that of a conventional semiconductor process. These advantages make tfbar ideal for monolithic purposes with other high frequency components on the same substrate. System on-chip is achieved under the MMIC's goal, and manufacturing costs are further reduced due to mass production of components. For integrated circuits, high frequency filtering circuits have become a fairly common technique on germanium (Si) wafers. The well-known thin film type acoustic wave resonator (TFBAR) has been found in the literature, mainly as the substrate of the 乂石夕, and the ShN4 as the support layer. However, the 溥-type acoustic resonator made of Shi Xi as a substrate still has the disadvantages of large volume, high insertion loss and difficulty in integration into high-frequency high-speed circuits. In order to solve the above problems, there is a need to provide a thin film type bulk acoustic wave resonator using gallium arsenide as a substrate and gallium arsenide aluminum as a supporting layer. [New content] The purpose of this creation is to provide a film-type bulk acoustic wave component.
6 FE016-P441-TW M294098 使甩砷化鎵作為基板以及砷化鎵鋁作為支撐層之薄膜型 塊體結構聲波共振器。 為達上述目的，本創作提出一種薄膜型體聲波元 件，其包含一基板；一支撐層；一下電極；一壓電層； 以及上電極。其中，該基板係作為該薄膜型體聲波元 件之承载本體；該支撐層係磊晶成長於該基板上，用以 在該基板與該支撐層之間形成良好的介面晶格匹配；該 下電極係使用麟法沈積於該支撐層上；該壓電層係使 =鍍法沈積於該下電極上；以及該上電極係使用歸 法/尤積於該壓電層上。 據本創作之―特徵’該薄膜型體聲波元件之基板 才料係為N型砷化鎵（CJaAs (100))。 Θ居=本創作之另—特徵，該薄膜型體聲波元件之支 掠層材料係為A1().3GaQ 7As。 板且：：本創作之又一特徵，該薄膜型體聲波元件之基 板具有背面共振腔結構。 入損失與良好整合至高涉 體聲作所揭示之薄卿體聲波元件，該薄則. ♦波7L件具有體積小、低插 馬速電路之優點。 明顯易懂，下:::::其::的、特徵、和優點能」 作詳細說明如下牛 較佳實施例，並配合所附圖式 實施方式6 FE016-P441-TW M294098 A film-type bulk acoustic wave resonator using gallium arsenide as a substrate and gallium arsenide aluminum as a support layer. To achieve the above object, the present invention proposes a film-type bulk acoustic wave element comprising a substrate; a support layer; a lower electrode; a piezoelectric layer; and an upper electrode. The substrate is used as a carrier body of the film-type bulk acoustic wave device; the support layer is epitaxially grown on the substrate for forming a good interface lattice matching between the substrate and the support layer; the lower electrode The pillar layer is deposited on the support layer by using a lining method; the piezoelectric layer is deposited on the lower electrode; and the upper electrode is used on the piezoelectric layer. According to the "feature" of the present invention, the substrate of the film-type bulk acoustic wave element is N-type gallium arsenide (CJaAs (100)). Θ居 = Another feature of the present invention, the plexus layer material of the film-type bulk acoustic wave element is A1().3GaQ 7As. Another feature of the present invention is that the substrate of the film-type bulk acoustic wave element has a back cavity structure. The loss and good integration into the high-level sound acoustics revealed by the thin-body acoustic wave components, the thin. ♦ Wave 7L parts have the advantages of small size, low insertion speed circuit. Obviously understandable, the following:::::::, features, and advantages can be described in detail in the following preferred embodiment, and in conjunction with the embodiment of the drawings
FE016-P441-TW 7 M294098 雖Λ、;、本創作可表現為不同形式之實施例，但附圖所 不者及於下文中說明者係為本創作可之較佳實施例。 明i…、第1圖，如圖所示為本創作所揭示之薄膜型 塊體結構聲波元件⑽之結構示意圖。該薄膜型體聲波 元件100係包含一基板i 5〇 ; 一支撐層M0 ; 一下電極 130，一壓電層12〇 ;以及一上電極ιι〇所組成。該基板 150係作為該薄膜型體聲波元件1〇〇之承載本體。該基 灸板150之材料較佳係為N型坤化錄…仏(1〇〇》。在結 構上，、有月面共振腔結構；該背面共振腔結構係使用 選擇性漏刻製作。該支撐層14〇遙晶成長於該基板15〇 上用以在5亥基板150與該支撐層14〇之間形成良好的 介面晶格匹配。該支撐層14〇之材料係為ai。_ 7As， i不限於之濃度比例。該下電極i3Q沈積並定 義該下電極130於該支標I 140上。該下電極13〇之材 枓，㈣A卜Au、Pt《M〇所組成族群中之一種材料。 “5：電層120’沈積並定義該壓電層於該下電極no 上。該壓電们20材料係為氮化銘（ain)且具有c轴取向 1化銘薄，具有C軸取向⑽2)表示其壓電特性 2良。取向性愈高表示該薄膜型體聲波元件100之特性 越好，即共振器的Q值备侖古 m , 皙乂值日愈间。因此，氮化鋁薄膜的品 ’ /膜型體聲波I件1GG之特性有決定性影響。 =上電極110,沈積並定義該上電極110於該壓電層120 ° 5亥上電極110之材料係使用Ai、Au、Pt與Mo所組FE 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 Ming i..., Fig. 1, is a schematic view showing the structure of a film-type bulk acoustic wave element (10) disclosed in the present invention. The film-type bulk acoustic wave device 100 comprises a substrate i 5 〇; a support layer M0; a lower electrode 130, a piezoelectric layer 12 〇; and an upper electrode ιι. The substrate 150 serves as a carrier body of the film-type bulk acoustic wave device. The material of the base moxibustion board 150 is preferably N-type Kunhua recorded...仏(1〇〇). In structure, there is a lunar resonant cavity structure; the back resonant cavity structure is made by selective leaking. The layer 14 is grown on the substrate 15 to form a good interface lattice matching between the substrate 150 and the support layer 14. The material of the support layer 14 is ai. _ 7As, i The lower electrode i3Q deposits and defines the lower electrode 130 on the support I 140. The lower electrode 13 is made of a material, and (4) a material of the group consisting of A, A, and Pt. "5: The electric layer 120' deposits and defines the piezoelectric layer on the lower electrode no. The piezoelectric material 20 is a nitride and has a c-axis orientation and a C-axis orientation (10) 2 ) indicates that the piezoelectric characteristics are good. The higher the orientation, the better the characteristics of the film-type bulk acoustic wave device 100, that is, the Q value of the resonator is excellent, and the enthalpy is more and more. Therefore, the aluminum nitride film The characteristic of the product / membrane type acoustic wave I 1GG has a decisive influence. = upper electrode 110, deposit and define the upper electrode 110 120 ° on the dielectric layer 110 using a material based electrode Ai 5 Hai, Au, Pt and Mo as the group
FE016-P441-TW 8 M294098 成族群中之一種材料。需〉主意的是，該支撐層⑽係使 用有機金屬氣相沈積_CVD)法蟲晶薄膜；該下電極 130、該壓電層12〇與該上電極m皆使用射頻磁控真空 藏鍍法200沈積。 根據本創作所揭示之薄膜型體聲波元件之較佳實施 例，该薄膜型體聲波元件之製程步驟係包含：在基板 15〇上依序沈積支撐層140、下電極130、壓電層12〇 ; B)沈積並定義壓電層120圖案；沈積並定義上;極ιι〇 圖案；C)於基板150背面以感應耦合電漿蝕刻方式完成 基板150空腔結構。該支撐層14〇係使用有機金屬氣相 __CVD)法磊晶薄膜。需注意的是，在尚未沈積壓 電層u:及電極前’先對基板15〇進行背面濕蝕刻(例 如：氳氧化鉀（KOH)、四鉀基銨（TMAH)、聯胺）製程， 蝕刻基板150至剩餘有數十微米的厚度，留有數十微米 之基板150厚度是為減少薄膜應力有助於後續電極盘壓 電請沈膜以支撐此結構。另外，在完成基板15〇背 面空腔結構步驟之濕钕刻液，係為加熱含少量的石夕酸鹽 粉末於四鉀基銨（TMAH)之溶液。 由於該薄膜型體聲波元件1GG之特性與製程參數有很大 的關係，例如在射頻磁控真空濺鍍系統中之壓力、基板 溫度、射頻功率（RF power)以及基板與耙材之距離^有 關係。為方便解說，請參照第2圖，如圖所示為射頻磁 控真空濺鍍系統之系統示意圖200。首先將基板15〇放FE016-P441-TW 8 M294098 A material in the group. It is to be understood that the support layer (10) is an organometallic vapor deposited CVD method, and the lower electrode 130, the piezoelectric layer 12 and the upper electrode m are all subjected to radio frequency magnetron vacuum deposition. 200 deposition. According to a preferred embodiment of the film-type bulk acoustic wave device disclosed in the present invention, the process of the film-type bulk acoustic wave device comprises: sequentially depositing the support layer 140, the lower electrode 130, and the piezoelectric layer 12 on the substrate 15? B) depositing and defining a pattern of the piezoelectric layer 120; depositing and defining the pattern; the ιι〇 pattern; C) completing the cavity structure of the substrate 150 by inductively coupled plasma etching on the back surface of the substrate 150. The support layer 14 is an epitaxial film using an organometallic gas phase __CVD method. It should be noted that before the piezoelectric layer u: and the electrode are not deposited, the substrate 15 is first subjected to backside wet etching (for example, potassium oxyhydroxide (KOH), tetrapotassium ammonium (TMAH), hydrazine) process, etching The substrate 150 has a thickness of several tens of micrometers remaining, and the thickness of the substrate 150 which is tens of micrometers is left to reduce the film stress to contribute to the subsequent electrode disk piezoelectric film to support the structure. Further, the wet etch liquid in the step of completing the cavity structure of the back surface of the substrate 15 is to heat a solution containing a small amount of the powder of the cerevisiae in tetrabasic ammonium (TMAH). Since the characteristics of the film-type bulk acoustic wave device 1GG have a great relationship with the process parameters, such as the pressure in the RF magnetron vacuum sputtering system, the substrate temperature, the RF power, and the distance between the substrate and the coffin. relationship. For ease of explanation, please refer to Figure 2, which shows a system diagram 200 of a radio frequency magnetically controlled vacuum sputtering system. First, the substrate 15 is placed
FE016-P441-TW 9 M294098 置在載台260上，廿山士 左右。逕由反應氣體入、空2幫浦250抽真空達 體電聚形成—；：：「口 210所提供之部分離子化之氣 高頻高能量之；；I40。射頻電場22。即提供-，高能粒子（通能粒子撞擊乾材咖表面。當 面，固體表面的原子和 J衝#到固體表 後，就從固體表面飛出 1、坆二间旎粒子交換動能 區240中，#，M舟為「濺鍍」。在電漿放電 用射頻電場220使兩極間產生電子 :電場22°之頻率係控制…·。這ί =電：： 放電區240中己預先充入的惰性氣體碰撞，； 撞擊陰極。反應氣體入口二:入^^材）吸引而 氣），受到電場作用獲得動 子（通常用虱 動里進而才里擊乾材230表面的原 轉移到正電離子的碰撞得到人射離子的動量 =多，料擊的乾材咖表面原子因接受反應氣體入口 擠使：二！離子的動量’對乾材230表面下原子造成屢 :^、兔生移位，此乾材23〇表面下多層原子的㈣， :產Ϊ垂絲材咖表面的作用力而把表面原子碰撞出 浐二二被娅.里出去的原子（沿途尚可將中性氬原子碰 心成V正電），最後終於沉積在基板（陽極）上形成薄膜。 今歲鍍過程中’基板溫度對蒸鍍薄膜的性質有很重要的 影，。通常基板也要適當的加熱，使蒸鍍原子具有足夠 能量，可以在基板表面自由移動’如此才能形成均勾的FE016-P441-TW 9 M294098 is placed on the stage 260, about the top of the mountain. The diameter is formed by the reaction gas inlet and the air 2 pump 250 vacuuming up to form a body--:: "The part of the ionized gas provided by the port 210 is high-frequency high-energy;; I40. The RF electric field 22 is provided - High-energy particles (the energy particles hit the surface of the dry coffee. When the surface, the atom on the solid surface and the J rush # to the solid surface, it flies out from the solid surface, and the two 旎 particles exchange kinetic energy zone 240, #,M舟For "sputtering", the radio frequency electric field 220 for plasma discharge is used to generate electrons between the two poles: the frequency of the electric field is 22°.... This ί = electricity:: The inert gas that has been precharged in the discharge region 240 collides; Impacting the cathode. The reaction gas inlet 2: into the material) is attracted by the electric field to obtain the mover (usually in the turmoil and then the original surface of the dry material 230 is transferred to the collision of the positive ion to obtain the human shot. The momentum of the ion = more, the atomic surface of the dry material of the material is squeezed by the inlet of the reaction gas: the momentum of the second ion is caused by the atom under the surface of the dry material 230: ^, the rabbit is displaced, and the dry material is 23〇 (4) of the multilayer atom under the surface: the surface of the calyx The force of the surface atoms collided with the atoms that went out of the esoteric escaping (the neutral argon atoms were touched into V positive electricity along the way), and finally deposited on the substrate (anode) to form a thin film. During the process, the substrate temperature has an important effect on the properties of the vapor-deposited film. Usually, the substrate should be heated appropriately so that the vapor-deposited atoms have sufficient energy to move freely on the surface of the substrate.
FE016-P441-TW (S) 10 M294098 薄膜。需注意的疋，在步驟A)中沈積下電極13〇與壓電 層120時，為避免金屬舆氮化鋁間的介面與表面均勻度 的問題，靶材230與載台260上欲被蒸鍍之基板間的距 離係保持在20 cm〜40 cm之間；基板溫度係控制在15〇 C〜20〇°C之間以及射頻功率需介於25w〜5〇〇w之間；壓 力需介於 2xl〇-6 Ton·〜l.8xl0-3 T〇rr 之間。 ’ k 綜上所述，本創作已詳細揭示該薄膜型體聲波元件 1〇〇。該薄膜型體聲波元件1GG具有體積小、低插入損失 與良好整合至南頻高速電路之功效。 、虽=然本創作已以前述較佳實施例揭示，然其並非用 ，、限疋本創作’任何熟習此技藝者，在不脫離本創作之 2神和乾圍内’當可作各種之更動與修改。如上述的解 的於t可以作各型式的修正與變化’而不會破壞此創作 圍：U此本創作之保護範圍當視後附之申請專利範 W所界定者為準。FE016-P441-TW (S) 10 M294098 film. It should be noted that when the lower electrode 13〇 and the piezoelectric layer 120 are deposited in the step A), the target 230 and the stage 260 are to be steamed in order to avoid the problem of interface and surface uniformity between the metal tantalum nitride and the aluminum nitride. The distance between the plated substrates is maintained between 20 cm and 40 cm; the substrate temperature is controlled between 15 ° C and 20 ° C and the RF power is between 25 W and 5 〇〇 w; Between 2xl〇-6 Ton·~l.8xl0-3 T〇rr. In summary, the present invention has disclosed the film-type bulk acoustic wave device in detail. The thin film bulk acoustic wave device 1GG has the advantages of small volume, low insertion loss, and good integration into a south frequency high speed circuit. Although the creation of the present invention has been disclosed in the preferred embodiment described above, it is not intended to be used, and is limited to the creation of any of the artists who are familiar with the art, and can do all kinds of things without departing from the 2 gods and the work of the creation. Change and modify. If the above solution can be used to modify and change the various types, it will not destroy this creation. U: The scope of protection of this creation is subject to the definition of the patent application.
FE016-P441-TW 11 M294098 【圖式簡單說明】 第1圖顯示為砷化鎵/砷化鎵鋁之薄膜型塊體結構聲 波共振器之結構不意圖，以及 第2圖顯示為射頻磁控真空濺鍍系統之系統示意圖。 【主要元件符號說明】 100薄膜型體聲波元件 110上電極 Ψ 120壓電層 130下電極 140支撐層 150基板 200射頻磁控真空濺鍍系統之系統示意圖 210反應氣體入口 220射頻電場 230靶材 240電漿放電區 250真空幫浦 260載台FE016-P441-TW 11 M294098 [Simple description of the diagram] Figure 1 shows the structure of the acoustic resonator of the film type bulk structure of gallium arsenide/gallium arsenide, and Fig. 2 shows the RF magnetron vacuum Schematic diagram of the system of the sputtering system. [Main component symbol description] 100 film type bulk acoustic wave element 110 upper electrode Ψ 120 piezoelectric layer 130 lower electrode 140 support layer 150 substrate 200 RF magnetron vacuum sputtering system system diagram 210 reaction gas inlet 220 RF electric field 230 target 240 Plasma discharge zone 250 vacuum pump 260 stage
12 FE016-P441-TW12 FE016-P441-TW
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