TWM272227U - Packaging structure for thermal-electrical IR sensor device - Google Patents
Packaging structure for thermal-electrical IR sensor device Download PDFInfo
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- TWM272227U TWM272227U TW092214789U TW92214789U TWM272227U TW M272227 U TWM272227 U TW M272227U TW 092214789 U TW092214789 U TW 092214789U TW 92214789 U TW92214789 U TW 92214789U TW M272227 U TWM272227 U TW M272227U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Description
M272227 五、創作說明(1) 一、【創作所屬之技術領域】 本創作係有關一種熱電堆紅外線感測元件之封裝結 構,特別是關於一種利用矽微機電加工技術製作元件與封 蓋之技術’此類封裝結構可製成熱電堆紅外線感測表面黏 著元件,以配合表面黏著技術(SMT )自動化生產之 勢0 二、【先前技術】 就現有技術而言,以熱 度感測乃是一種相當廣泛的 種不同金屬(導體)構成環 不同時,環路中就會產生電 貝克效應(Seebeck effect 小即可知道熱電偶二端之溫 熱電偶經過特殊元件結 量造成冷熱二接合點溫差, 件。早期之熱電偶多用金屬 Constantan),而後發現半 所以大力發展半導體熱電偶 單個熱電偶提供的熱電電壓 個熱電偶’構成所謂的熱電 熱電電壓訊號。此熱電電壓 係數、冷熱接合點溫差等數 近年來隨著矽微機電加 電偶(thermocouple)作為溫 技術。熱電偶之原理為利用二 路時’當冷熱二接合點的溫度 壓’此種熱電特性即稱之為席 )。藉由量測席貝克電壓之大 差,進而測定與校正溫度。 構设什,猎由吸收熱輕射之能 亦可作為熱輻射度量之感測元 細絲製成,如銅-康銅(C u 一 導體材料有更高的熱電係數, 作為微弱熱賴射檢測;然而, 有限’所以串聯數十個或上百 堆(thermopi 1 e ),驻,ν 担必 係與熱電偶數目、材 值之乘積成正比。 工技術普及,發展出具備低熱M272227 V. Creation instructions (1) 1. [Technical field to which the creation belongs] This creation relates to the packaging structure of a thermopile infrared sensing element, and in particular to a technology that uses silicon microelectromechanical processing technology to make components and caps' This type of packaging structure can be made into a thermopile infrared sensing surface-adhesive component to match the potential for automated production of surface-attachment technology (SMT). 0. [Previous technology] As far as the existing technology is concerned, the use of heat sensing is quite extensive. When the different kinds of metals (conductors) form different loops, the electric Beck effect will occur in the loop (the small Seebeck effect can be known that the temperature of the thermocouple at the two ends of the thermocouple passing through the special element junction causes the temperature difference between the cold and hot junction points. Early thermocouples often used metal (Constantan), but later discovered that semi-strongly developed semiconductor thermocouples, thermocouple voltage provided by a single thermocouple, thermocouples' constitute the so-called thermoelectric thermoelectric voltage signal. The thermoelectric voltage coefficient, the temperature difference between the hot and cold junctions, etc. In recent years, silicon micro-electro-mechanical thermocouples have been used as temperature technology. The principle of a thermocouple is to use the thermoelectric characteristic of the temperature and pressure of the junction between the hot and cold junctions when the two circuits are used. By measuring the large difference between the Seebeck voltages, the temperature can be measured and corrected. Structured, hunting is made of sensing elementary filaments that can absorb heat and light, and can also be used as a measure of thermal radiation, such as copper-constantan (Cu-conductor material has a higher thermoelectric coefficient, as a weak thermal radiation Detection; however, it is limited, so dozens or hundreds of thermopi 1 e are connected in series, and ν is bound to be proportional to the product of the number of thermocouples and the value of materials. Popularization of engineering technology and development of low heat
M272227 五、創作說明(2) 絕緣特性之高性能熱電堆結構,其係使用半導體 產技術"担例如多晶矽與鋁作為熱電偶,再配合半導體量 堆紅i線=高品質與價格低之熱電堆等各種應用。熱電 爐、汽車1:::主要應用在如耳溫搶、吹風機、微波 :特以及利用紅外線吸 二丞礎的虱體偵測器上,應用相當廣泛。 το-18 m之@熱0電堆紅線感測元件主要係採用標準之το—5或 二金/二體Λ裝,,第-圖所示,此封裝結構係在 料,此穿透材ί::ΐ:後再填補上適當的紅外線穿透材 金屬電晶體包裝溫穿透波段。'然而,此種 行印刷電路製作時,亦盘採J J本昂5 ’且其在進 =尺=製程’實不利於量…會增加電 板尺寸材料、人工與時間等生產成本。 有鑑於此,本創作接山^ ^, 堆紅外線感測元件之封裝結構。彳、f知封裝方式的熱電 三、【創作内容】 件之$ ϋ :主:::係在提供-種熱電堆紅外線感測元 且此封蓋除了具有密閉元件之作用外,ί 兼八感應頻,、a與視線範圍大小之律定功能。 本創作之另目的係在提供一種熱電堆紅外線感測元M272227 V. Creation Note (2) High-performance thermopile structure with insulation characteristics, which uses semiconductor production technology "for example, polycrystalline silicon and aluminum as thermocouples, and then cooperates with semiconductor quantity reactor red i-line = high quality and low price thermoelectric Heap and other applications. Thermoelectric furnaces, automobiles 1 ::: are mainly used in ear temperature detectors, hair dryers, microwaves, and lice detectors that use infrared light to absorb the heat. They are widely used. το-18 m @ 热 0 电 斗 Red wire sensing element mainly adopts the standard το-5 or two gold / two body Λ package, as shown in Figure-. This packaging structure is in material, this penetrating material ί :: ΐ: Fill the metal penetrating band of the appropriate infrared penetrating material with a metal-transistor package. 'However, in this kind of printed circuit production, J J Benang 5' is also used, and it is not conducive to volume in advance = rule = process ... It will increase the production cost of board size materials, labor and time. In view of this, this creation follows the mountain ^ ^, the package structure of the stack infrared sensor.彳, thermoelectricity of the packaging method III. [Creation content] $ ϋ: Main ::: Provides a kind of thermopile infrared sensor, and this cover has the function of a sealing element, and it also has eight sensors. Frequency, a, and the law of the size of the line of sight function. Another purpose of this creation is to provide a thermopile infrared sensor
第6頁 M272227 五、創作說明(3) 封裝結構,其係可同時配合一基板構成一表面黏著元 件(Surface Mount Device,SMD),以利於大量生產, 並減少元件製造流程、材料、體積與重量。 本創作之再一目的係在提供一種熱電堆紅外線感測元 Ϊ之封ΐ結構’其係可構裝成為—種熱電堆紅外線感測器 & p黏著兀件,此乃與現有自動化生產技術之電子零件型 相契合,有助於製造商採用自動化生產設備,減少生產 Γίί時程:並降低系統製造之成本,故有利於量產化, 可有效解決先前技術之缺失者。 複八為ί達到上述之目的’本創作提出—種新的熱電堆紅外 ^測-件之封裝結構,其係包括一感測器,其係在一: 之美:Ϊ Ϊ熱電:件等結構;再利用一封蓋安裝至感測器 二板上方,以精此密封住其上之該熱電元件,且此4 '、彳用一矽基材蝕刻一凹洞所形成者。 多展2夕卜’本創作更可在封蓋之内外纟面各設有-抗反鼾 =層膜;再於上述封蓋之外表面鍍上一金屬,= 蓋厚度與金屬屏蔽層來控制該感測器之視“圍 =)。另外,亦可利用封蓋尺寸與钮 二 整该感測器之視線範圍。 术控制調 容思ί Γ精由具體實施例配合所附的圖式詳加說明一® ;易瞭解本創作之目的、技術内容、特點及其所 四 實施方式 第7頁 M272227 五、創作說明(4) 本創作提出一種新的熱電堆紅外線感測元件之封裝結 構’其係利用砍微機電加工枯彳奸翻a $ η # β入 电加技術製作出之封蓋來密封感測 器’並同時配合-承載基板構成一表面黏 (SMD ),此種封裝結構不但利於量 可減少元件製造流程、材料、體積鱼看θ車“知技術更 刊Τ寸般檟與重量,足以取代習知 所使用之TO-5或TO-18之封裝方式。 < & 第二圖為本創作之封裝結構示意圖,如圖所示,一敎 電堆紅外線,測元件10之封裝結構主要係由一熱電堆感;則 器1 2及-封蓋30所組成。此感測器i 2係包含一單晶矽基板 14,其係利用化學蝕刻製程於基板14上蝕刻成一空腔部 16,一薄膜浮板18係覆蓋於此空腔部16上,且此薄膜浮板 18係由一層以上之絕緣薄膜所構成,較佳者為矽氧化物與 矽氮化物結構層;再於薄膜浮板丨8上設置有一個或複數個 之熱電元件20 ’並利用此熱電元件2〇形成一熱接合點及一 冷接合點,此熱接合點係設於薄膜浮板丨8中心,而冷接合 點則位於基板1 4側’當薄膜浮板1 8照射光線後,其溫度分 佈係以中心為最高,再向周圍遞減;以及一用以吸收紅外 線之黑體輻射吸收層22係藉由氧化矽或氮化矽之絕緣層24 設置於熱電元件20的最上層,此黑體輻射吸收層22之^蓋 範圍必須覆蓋住熱接合點,而外圍則以不覆蓋到冷接合點 為界。另在熱電元件20周圍之基板14上設有複數個金屬塾 26,以提供作為後續打線製程之接觸墊。 接著,藉由一封裝膠體28,將一利用矽基材蝕刻一凹 洞製成之封蓋30安裝在上述感測器12之基板14上的絕緣層Page 6 M272227 V. Creation instructions (3) Packaging structure, which can be combined with a substrate to form a surface mount device (SMD) to facilitate mass production and reduce component manufacturing processes, materials, volume and weight . Another purpose of this creation is to provide a sealing structure of a thermopile infrared sensor element, which can be configured as a kind of thermopile infrared sensor & p-adhesive elements, which is in line with the existing automated production technology. The matching of electronic component types helps manufacturers to adopt automated production equipment, reduce production time and reduce the cost of system manufacturing, so it is conducive to mass production and can effectively solve the lack of previous technologies. In order to achieve the above-mentioned purpose, the present invention proposes a new type of thermopile infrared ^ test-package structure, which includes a sensor, which is in one of the following categories: Beauty: Ϊ Thermoelectricity: components and other structures; Then, a cover is mounted on the second plate of the sensor to seal the thermoelectric element thereon, and the 4 ′, 蚀刻 is formed by etching a cavity with a silicon substrate. More exhibitions 2 Xibu 'this creation can also be set on the inside and outside of the cover-anti-repellent = layer film; then the outside surface of the cover is plated with a metal, = cover thickness and metal shielding layer to control The vision of the sensor is "surround =). In addition, you can also use the cover size and the button to adjust the line of sight of the sensor. Technical control and adjustment thinking Add note 1®; easy to understand the purpose, technical content, characteristics and implementation of the fourth embodiment, page 7 M272227 V. Creation Instructions (4) This creation proposes a new packaging structure of thermopile infrared sensing element 'its It uses a micro-electro-mechanical process to cut a $ η # β into the electrical processing technology to seal the sensor 'and also cooperates with the carrier substrate to form a surface adhesive (SMD). This packaging structure is not only conducive to The quantity can reduce the component manufacturing process, materials, and volume. "Knowledge technology will be published." The size and weight are sufficient, which is enough to replace the conventional TO-5 or TO-18 packaging method. < & The second picture is a schematic diagram of the packaging structure of the creation. As shown in the figure, the package structure of a stack of infrared rays is mainly sensed by a thermopile; the device 12 and the cover 30 composition. The sensor i 2 includes a single-crystal silicon substrate 14, which is etched into a cavity portion 16 on the substrate 14 by a chemical etching process. A thin-film floating plate 18 covers the cavity portion 16, and the thin film The floating plate 18 is composed of one or more insulating films, preferably silicon oxide and silicon nitride structural layers; and one or more thermoelectric elements 20 ′ are provided on the thin film floating plate 丨 8 and the thermoelectricity is utilized. The component 20 forms a thermal junction and a cold junction. The thermal junction is located at the center of the thin film floating plate, and the cold junction is located on the substrate 14 side. When the thin film floating plate 18 is irradiated with light, it The temperature distribution is highest at the center, and then decreases toward the surroundings; and a blackbody radiation absorbing layer 22 for absorbing infrared rays is provided on the uppermost layer of the thermoelectric element 20 through an insulating layer 24 of silicon oxide or silicon nitride, and the blackbody radiation The cover area of the absorbing layer 22 must cover the thermal junction, while the periphery is bounded by not covering the cold junction. In addition, a plurality of metal cymbals 26 are provided on the substrate 14 around the thermoelectric element 20 to provide contact pads for subsequent wire bonding processes. Next, an encapsulating layer 28 is used to mount a cover 30 made of a silicon substrate by etching a cavity on the insulating layer of the substrate 14 of the sensor 12.
第8頁 M272227 五、創作說明(5) 24表面,以密封住其上之該熱電元件2〇等;在此封蓋3〇之 内外表面則分別設有一抗反射多層膜32、34,如此即可完 成一初步的熱電堆紅外線感測元件1 〇封裳於構。 70 其中,上述之矽基材蝕刻一凹洞係利用矽異方性蝕刻 技術或石夕等方性餘刻技術來完成的,兩者完成之封蓋外型 π同,然功能相且除了使用封裝膠體28密封該封蓋30 與感測器1 2之外,亦可使用銲錫或低溫破璃密封之。 本創作係選用適當的矽基材厚度來製作封蓋3〇,入 於封蓋30内側斜邊之紅外線因全反射而無法被感測器12接 ^,形成入射光自然屏蔽,故感測元件丨〇之視角主要由封 蓋3 0之薄板區尺寸與薄板到感測器丨2距離決定之,其 板到感測器1 2距離主要藉由蝕刻深度來控制。再者了喪 二”角設計效果,亦可在封蓋3〇外表面之抗反射多層 膜3—4表面鍍上一層金屬屏蔽層36,如第三圖所示,以利用 ^盍30厚度與該金屬屏蔽層36來規範感測元件1〇之視線範 力一 ▲ ▼丨通耆電器產品之短ΛΙ、程溽化,目前電路板 用之零件,不論是主動元件或是被動元件,其封、 (SMD) 5 輕易構==面:揭露之熱電堆紅外線感測元件可 術趨ΐ 不同形式的表面黏著元件,以符合現有技 如第四圖所示,將熱電堆紅外線感測元件1 0安裝固定 、已佈線且已上有銲錫38之承載基板40上,通常為氧化Page 8 M272227 V. Creative Instructions (5) 24 surface to seal the thermoelectric element 20 and so on; the inner and outer surfaces of this cover 30 are respectively provided with an anti-reflective multilayer film 32, 34, so that is A preliminary thermopile infrared sensing element 10 Fengshang Yugou can be completed. 70 Among them, the above-mentioned silicon substrate etching a cavity is completed by using silicon anisotropic etching technology or square-shaped epitaxial technology such as Shi Xi. The cap shape of the two is the same, but the functional phase is the same except that the sealing gel is used. 28. Seal the cover 30 and the sensor 12 in addition to soldering or low temperature glass breaking. This creation uses a suitable silicon substrate thickness to make the cover 30. The infrared rays entering the beveled side of the cover 30 cannot be connected by the sensor 12 due to total reflection, forming a natural shielding of incident light, so the sensing element The angle of view of 丨 〇 is mainly determined by the size of the thin plate area of the cover 30 and the distance from the thin plate to the sensor. The distance from the plate to the sensor 12 is mainly controlled by the etching depth. In addition to the design effect of the corner of the second corner, a metal shielding layer 36 can also be plated on the surface of the anti-reflection multilayer film 3-4 on the outer surface of the cover 30, as shown in the third figure, in order to make use of the thickness of ^ 盍 30 and The metal shielding layer 36 is used to regulate the sight line of the sensing element 10. Fan Liyi ▲ ▼ 丨 The short Λ1 and Cheng Cheng of electrical appliances, the current circuit board parts, whether it is active or passive components, its sealing, ( SMD) 5 Easy structure == surface: the exposed thermopile infrared sensing element can be operated in different forms of surface adhesive components, in accordance with the prior art, as shown in the fourth figure, the thermopile infrared sensing element 10 is installed and fixed On a carrier substrate 40 that has been wired and has solder 38 on it, it is usually oxidized
第9頁 M272227 五、創作說明(6) 銘基板或印刷電路板(PCB),I該銲錫38 導電接點;再利用複數打後4 2將邙觫綠4枝 句對外之 上,最德含上-封接至承載基板 此即可完成-無引線晶片承載封裝(Leadles=度’如 Career,LCC)形式之表面黏著元件。再利用 腳46代替該承載基板4()上之銲測,即 示之小外型封t (S0IC)形式之表面黏著元五圖所 承前所述,本創作亦可封裝成球柵 ,如第六圖所示,在承載基板4〇底面設有 =固%錫 球48 ’以利用該等銲錫球48作為感測元件u 點。此外,更可將感測元件i。直接構裝 二接 元件1〇係利用打線42電連接至該電路板5乂,士第 方】 以構裝成-⑽(ChiP 〇n Board)電路板製作 ”其巾2上述之承載基板上更可設有難電阻或是二 極體’以作為本體溫度之量測。 測4創機電加工技術製成之封蓋來密封感 it ^ PP - A面各鍍有一抗反射多層膜以增加穿Page 9 M272227 V. Creative Instructions (6) Inscription board or printed circuit board (PCB), I solder 38 conductive contacts; then use the plural number 4 2 to make the 4 green 枝 sentences above the outside, the most ethical Up-sealing to the carrier substrate is then completed.-Leadless chip carrier package (Leadles = degree's such as Career, LCC) in the form of surface adhesion components. The foot 46 is then used to replace the welding test on the carrier substrate 4 (), that is, the surface adhesion shown in the form of a small outline t (S0IC) is shown in the previous figure. This creation can also be packaged as a ball grid, as shown in As shown in FIG. 6, a solid% solder ball 48 ′ is provided on the bottom surface of the carrier substrate 40 to use the solder balls 48 as the u point of the sensing element. In addition, the sensing element i can also be used. Directly constructing the two-junction component 10 is electrically connected to the circuit board 5 with a wire 42, and it is made of a Chi-Pon board circuit board, which is fabricated into a "⑽" (ChiPon board) circuit board. Can be equipped with difficult resistance or diode 'as the body temperature measurement. Measure the cover made of 4 invasive electromechanical processing technology to seal the sense of it ^ PP-A side is plated with an anti-reflective multilayer film to increase wear
=限疋感測器之感應頻譜;再設計適當的封蓋薄板J 範Ξ洞ΓΓ度與金屬屏蔽層尺寸來控制該感測器 電堆紅外線感測器表基;之設計’以構裝成-種熱 材料、體積鱼重量以減少元件製造流程、 備減)生產流程與時程,降低系統製造之成本,因此有 第10頁 M272227= Limit the sensing spectrum of the sensor; then design the appropriate cover sheet J Fan Yedong ΓΓ degree and the size of the metal shielding layer to control the surface of the stack of the infrared sensor of the sensor; the design 'is constructed into -Thermal materials, volume fish weight to reduce component manufacturing process, backup) production process and time schedule, reduce system manufacturing costs, so there is page M272227
利於量產化。 以上所述之實施例僅 點,其目的在使熟習此項姑ί說明本創作之技術思想及特 容並據以實施,當不能=之人士能夠瞭解本創作之内 凡依本創作所揭示之籍妯“ 3 1乍之寻引轭圍,即大 盍在本創作之專利範圍内。 > 飾,仍應涵 圖號說明: 10 12 熱電堆紅外線感 感測器 測元件 14 基板 16 空腔部 18 薄膜浮板 20 熱電元件 22 黑體輕射吸收@ 金屬墊 24 絕緣層 26 28 封裝膠體 30 封蓋 32 抗反射多層膜 34 抗反射多層膜 36 金屬屏蔽層 38 銲錫 40 承載基板 42 打線 44 封膠 46 焊接腳 48 銲錫球 50 電路板Conducive to mass production. The above-mentioned embodiment is only a point, the purpose of which is to familiarize yourself with the technical ideas and features of this creation and implement it accordingly. Those who cannot = can understand the contents of this creation that are disclosed in this creation. The "3 1 search for yoke encirclement, that is, Dao is within the scope of the patent of this creation. ≫ Decoration, should still contain the drawing number description: 10 12 Thermopile infrared sensor sensor element 14 substrate 16 cavity Part 18 Thin film floating plate 20 Thermoelectric element 22 Black body light emission absorption @ Metal pad 24 Insulation layer 26 28 Encapsulating gel 30 Cap 32 Anti-reflective multilayer film 34 Anti-reflective multilayer film 36 Metal shielding layer 38 Solder 40 Carrier substrate 42 Wire bonding 44 Sealant 46 solder pins 48 solder balls 50 circuit boards
第11頁 M272227Page 11 M272227
圖式簡單說明 第一圖為習知熱電堆红外磕 18全屬電外線感測元件採用標準Τ〇-5或T0-18金屬電日日體封裝之結構示意圖。 ΐΐΞίί創作之封裝結構示意圖。 第一圖為本創作增設有冬凰反 第四圖為本創作封蔽層之封裝結構示意圖。 之結構示意圖。、成…、引線晶片承載封裝(LCC )形式 苐五圖為本創作封裝 意圖。 第六圖為本創作封裝 示意圖。 第七圖為本創作構裴Brief description of the diagram The first diagram is a schematic diagram of the structure of the conventional thermopile infrared 磕 18 all electric external line sensing element using a standard TO-5 or T0-18 metal electric solar body package.示意图 ίί The schematic diagram of the packaging structure. The first picture is the addition of winter phoenix to the creation. The fourth picture is the schematic diagram of the packaging structure of the masking layer of the creation. The structure diagram. , Cheng ..., Leaded Chip Carrier Packaging (LCC) form The sixth figure is the schematic diagram of the creative package. The seventh picture is the composition of Pei
成小外型封裝(SO I C )形式之結構示 成球彳冊陣列封裝(BGA )形式之結構 成COB電路板製作方式之結構示意圖Structure shown in the form of a small outline package (SO I C) Structure shown in the form of a ball book array package (BGA) Structure of a COB circuit board manufacturing method
第12頁Page 12
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