TWM259319U - Packaging structure of light emitting diode (LED) - Google Patents

Description

M259319 IV. Creation Description α) [Technical Field to which the New Type belongs] This creation is about a light emitting diode packaging structure, especially a light emitting diode packaging structure that prevents brightness degradation. [Prior technology] The light emitting principle of Light Emission Diode (LED) is based on the inherent characteristics of semiconductors. Its element has two N and P electrode terminals, a voltage is applied between the two ends, and a small current can be used to emit light; Due to the different discharge and heat emission principles of the traditional incandescent tube, light-emitting diodes are called

Cold light source (cold 1 ight). Since the light emitting diode has high durability, long life, light weight, low power consumption, and does not contain harmful substances such as mercury, the lighting equipment manufacturers place great expectations on the light emitting diode. In terms of domestic manufacturers' 7 technology, domestic upper and middle-stream manufacturers produce blue light-emitting diodes mainly for mobile phones, and the substrates used are mainly sapphire. In terms of downstream packaging technology, the technical difficulty is mainly how to withstand high current, It has high heat dissipation or reduces the attenuation of the brightness of the die. In addition, the products are now being developed to be thin and short. Therefore, the SMD packaging technology that reduces the volume of the package is also the focus of packaging.

The more mature semiconductor materials as light-emitting diode light sources include: gallium phosphide and gallium arsenide series materials used in red, yellow, and green visible light band displays, and gallium nitride (GaN) series materials. Among them, gallium nitride (GaN) queue materials are the most important compound semiconductor components required to make UD or laser diodes in the red to ultraviolet range. For example, the structure of gallium nitride (GaN) light-emitting diode is p, N electrode terminal

M259319

4. Description of creation (2) It is located on the same side and uses sapphire as the substrate. 'When the GaN blue light-emitting diode wafer is added with yttrium (Aluminum, Garnet, YAG) yellow fluorescent powder, the blue light is used to excite the YAG yellow fluorescent powder to generate yellow light, and at the same time, some blue light is also emitted. 'White light can be formed after mixing the page; this white light emitting diode has a long life and saves The advantages of electricity, low voltage drive, safety and environmental protection have been regarded as lighting sources for the 21st century by scientists. Because the sapphire material used as the substrate is an insulator, it makes white light emit = polar body 1 a cannot effectively resist static electricity, and it is easy to cause local damage ^

The number of teeth's electrostatic discharge (ESD) is uncontrollable and is a random process that is difficult to repeat. Therefore, please read the first picture, which is a conventional light emitting diode packaging structure 9 a ^ Includes metal support 9 1 a, support & cup 9 2 a provided on the metal support 9 1 a, and gallium nitride light emitting diode grain 1 a and static electricity provided on the metal support 9 1 a Protective diode crystal grains 2 a; the metal bracket 9 1 a has a first metal leg 9 1 1 a and a second metal leg 9 1 2 a in a separated state; the support cup 9 2 has separate settings A first supporting wall 92la on the first metal leg 9111 and a second supporting wall 922a provided on the first metal leg 912a; a gallium nitride light emitting polar crystal grain 1a is provided on the metal The second metal leg 9 1 2 a of the bracket 9 1 a and the electrostatic protection diode crystal grain 2 a are disposed on the first metal leg 9iia of the metal bracket 91 a; the gallium nitride light emitting diode The bulk crystal grain 1 a has a sapphire substrate 10 a provided on the second metal leg 9 1 2 3 and a semiconductor having p and n electrode terminals.

Page 6 M259319 丨 Creation instructional material (non-conductive material a ° The third metal is electrically connected to the tri-metal lead (3) by the nitrided metal support wire 4 a), the electrostatic protection diode The body die 2a is electrically connected to the P electrode terminal to the first metal leg 9a by silver glue or the like 20a. The light emitting diode package structure 9a further includes first, second, and lead wires 3a, 4 a, 5a, the first metal wire 3a is a gallium light-emitting diode die 1a, the P electrode terminal is electrically connected to the 91a, the second metal leg 912a, and the second metal system The N electrode terminal of the gallium nitride light emitting diode crystal grains 1 a, the P electrode terminal of the electrostatic protection diode crystal grains 2 a, and the fifth line 5 a are formed by the electrostatic protection diode crystal grains 2 a's N electrode to the metal support 9 1 a's the second metal leg 9 1 2 a the photodiode's second 9 2a a's grain 1 a blue and green light is formed after light excitation: light wavelength The third and third inner sealing and filling systems include (or purple-yellow fluorescent, yellow, white, and white light) types of assembled photodiode seals 1a, and the static metal wire 3 Body 9 3 filling material 9 4 a gallium nitride series external light), the light powder 9 3 1 fluorescent powder 9 3 is emitted (or the structure 9 a further includes electric protection diode crystal grains a, 4 a, 5 a package a, and filled therein. Among them, the gallium nitride material, the gallium nitride-based packaging colloid 9 3 a series a (or three-wavelength fluorescent 1 a generates yellow light and ultraviolet light excites three wavelengths to nitride the Gallium emission 2 a, the first covering the support cup metal support 9 1 light emitting diode crystal material can be emitted as bad latex resin and powder), using blue mixing part of blue fluorescent powder to generate the system is to nitride Gallium light emitting diode grains 1 a and the

Page 7 M259319 丨 Description of creation (4) Electrostatic protection diode grain 2 a is in reverse parallel. When this line suddenly encounters an electrostatic discharge situation, the electrostatic protection diode grain 2 a can be instantaneous. Collapse and provide a low-impedance path, and the instantaneous current flowing to the gallium nitride light-emitting diode grains 1 a is diverted to the electrostatic protection diode grain 2 a, and the gallium nitride light-emitting diode crystals Grain 1 a is protected. However, the material of the electrostatic protection diode grain 2 a is mainly silicon si 1 i con). Theoretically, silicon material has the physical characteristics of absorbing specific light below 1.5 μm, and the wavelength range of visible light is generally It is about 400 nanometers to 700 nanometers, and the wavelength range of ultraviolet light is 10 to 400 nanometers. According to the actual experience of the creator, the conventional light emitting diode packaging structure 9 a The electrostatic protection diode crystal 2 a is installed, and the brightness is attenuated by 15 to 20%. In addition, due to the position relationship of the electrostatic protection diode crystal 2 a, the electrostatic protection diode is easily caused. The bulk crystal grain 2 a absorbs more blue light, which causes white light of different degrees to be formed above the electrostatic protection diode grain 2 a and above the gallium nitride light emitting diode grain 1 a, resulting in the conventional light emitting diode. The light emitting color of the package structure 9a is uneven. The reason is that the creator feels the above-mentioned shortcomings. It is an intensive study and cooperation with the application of theories to propose a rationally designed, extensive and effective improvement of the above-mentioned original creations. [New content] The main purpose of this creation is to provide a light-emitting diode packaging structure that can not only be protected against static electricity, but also improve brightness and eliminate uneven light emission.

Page 8 M259319 Fourth, the creation description In order to install the structure, the electric crystal grains and the nitrogen crystal grains and the gallium nitride-based legs are respectively divided into a metal branch crystal grain, the gallium nitride and the gallium nitride. The polar crystal light colors are all technical content, but the attached work is limited (5). The achievement of the system includes connecting to the gallium-based system, the nitrided light-emitting diode, and the electrical connector. This system is a transluminous light-emitting particle with uniformity. Please refer to the system shown in the figure. For the purpose described, this creative department provides: the first and second metal legs emitting di-gallium-based emitter crystal light diodes in a separated state are connected to the electrostatic anti-parallel-parallel diode photodiode The metal protector of the photodiodes is provided with crystal grains to seal the grains; and the encapsulation of the polar crystals is enclosed by the first polar grains of the metal p and N electrode end brackets, and the electrostatic system is 鬲The light emitting structure of the degree of emission can be a first and first electrostatic coating of the statically mounted colloidal bracket. The first 'metal, the nitriding protection, and the second drop setting system can avoid the protection of the current diode and the second metal feet. In the diode electric protection diode, the second metal / and second gold leg and the gallium-based light-emitting diode crystal are placed together; Further understanding of the characteristics and techniques of this creation The detailed description and drawings of this creation are shown below. The formula is provided for reference and explanation only, and is not intended to be used for this creation. [Embodiment] Please refer to the second picture, Sun Yishi h Examples provide a hair The first-embodiment of pole creation. The actual broadcast: package structure 9, the light-emitting diode exhibition structure 9 series includes the first gold 篦 a a 屦 加 加 Le ”弟 一 metal feet 911, Θ12 • ^ metal bracket 9 1 、 Reynolds knives ~ Electric transport to read the first and second metal feet 9

Page 9 M259319 7. Creation instructions 1, 9 Polar body crystal light-emitting particles 2 and the electrostatic protection system are a high-grain 1 hair diode seal, and 1 of them is separated from the second end of the nitrogen by borrowing. The static 1 of the 9th (6) 1 2 and the polar crystal 1 of the gallium nitride-based protective diode have a degree difference △ of the light installation structure 9, and the first has a spacer gallium-based metal The feet 1 and the second metal electric protection diode), or a transient that the seal I 1 is scattered with a broken resin, is called the seal, and the sealant 1 and the second gel 9 are placed therein; materials, The colloid 9 is placed on the first and the brother-integrated 9 3 series supporting wall 9 2 and the electrostatic protection diode is covered with the electrostatic colloidal light-emitting diode chip 2 and the d; it is to avoid the static system. Can maintain its metal feet 9 space 9 5 (light diode crystal 9 1 2 above the two metal wire legs 9 1 2 polar crystal grains 2 inhibit the diode 3 to be transparent to the encapsulating colloid light emitting diode 3 Support cup metal feet 9 metal feet 9 can be sealed in the body 0 body grain protection diode 9 3 ° grain 1 gallium nitride, the electrical protection High brightness 1 1 and please refer to the grain 1 series and the hair 4 and the first series can be (TVS)-light material 9 3 series packaging knot 9 2, 1 1 on 1 2 on the support cup 2 and the body crystal the static system The photodiode and the fourth color set of photodielectric gallium nitride particles 2 and the electrical protection are reversed and the photodiode gallium-based hair crystal grains are light-colored and two-metal). The metal pole is connected to the light-emitting diode and the gallium nitride diode. Bulk grains 1 Photodiodes 2 with uniform light emission. Feet 9 2 Φ Bracket 9 1 P, N electrode Metal bracket Metal feet 9 1 1. Body (Zener pole, and the fluorescent powder 9 can be an epoxy resin or a structure 9 can be entered into the support cup 9 step has a first support wall 921, a second support wall 912, 9 2 First supporting wall 9 2

Page 10 M259319 IV. Creation Instructions (7) where ‘the south degree drop Δ d is at least greater than the height of the electrostatic protection diode grain 2. The light emitting diode package structure 9 may further include an insulating filling material 9 4 housed in the metal bracket 91. As little as the conventional light-emitting diode packaging structure 9 a, this kind of assembly method in which the gallium nitride-based light-emitting diode die 1 a and the electrostatic protection diode die 2 a are in antiparallel is suddenly encountered. When an electrostatic discharge situation occurs, Gentron can also protect the gallium nitride light-emitting diode grains 1 from static electricity or damage; and this creation is due to the electrostatic protection of the diode grains 2 and the nitrogen. The gallium-based light-emitting diode crystal grains 1 are arranged at the height difference Δ d to prevent the light emitted by the gallium nitride-based light-emitting diode crystal grains 1 from being absorbed by the electrostatic protection diode crystal grains 2, thereby maintaining the The brightness of the light-emitting diode package structure 9 and the situation of avoiding uneven light-emitting colors are generated. Please refer to the second to fourth figures, which are the electrostatic protection diodes. When the particle 2 has p and n electrode terminals facing up and down, the light emitting diode encapsulation structure 9 The third embodiment. As shown in the second figure, in the first embodiment of the light-emitting diode enclosure structure 9, the first metal leg 9 1 1 includes a first bent portion 9 1 1 1 which extends obliquely downward, and is formed by the first A first supporting portion 9 1 1 2 extending horizontally is bent, and the electrostatic protection diode crystal grain 2 is arranged on the first supporting portion 9 1 1 2; the first folding portion 9 1 1 The distance of the downward bending 1 is the height difference Δd, and the electrostatic protection diode crystal grains 2 and the gallium nitride-based light emitting diode crystal 1 are arranged at the height difference Δd. As shown in the third figure, the second embodiment of the light-emitting diode packaging structure 9, wherein the first metal leg 9 1 1 is a package

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M259319 Fourth, the creation description (8) includes the first U-shaped load-bearing portion 9 1 1 3 extending downward, and the electrostatic protection diode crystal 2 is arranged on the bottom surface of the first U-shape load-bearing portion 9 1 1 3, The depth of the first U-shaped load-bearing portion 9113 recessed downward is the height difference of eight d, and the height difference is represented by the electrostatic protection diode crystal grains 2 and the gallium nitride-based light emitting diode crystal grains 1. △ d is set. As shown in the fourth figure, the third embodiment of the light emitting diode package structure 9, the second metal leg 9 1 2 includes a second bent portion 9 1 2 1 extending obliquely upward, and the second bent portion 9 1 2 The folded portion 9 1 2 1 is a horizontally extending second supporting portion 9 1 2 2. One grain of the gallium nitride-based light-emitting diode crystal is provided to the second supporting portion 9 1 2 2, and the second folded portion 9 The height of the upward bending of 1 2 1 causes the electrostatic protection diode crystal grains 2 and the gallium nitride-based light emitting diode crystal grains 1 to be arranged at the height difference Δ d. The above three embodiments all use the metal bracket 9 1 to have the first or second metal feet 9 1 1 and 9 1 2 with different structures extending upward or downward, resulting in the first or second metal feet 9 1 The height drop Δ d is between 1 and 9 1 2, and the south degree difference Δ d is perpendicular to the electrostatic protection diode crystal grain 2 and the vaporized thallium light emitting diode crystal grain 1. The electrostatic protection diode grains 2 of the above three embodiments are all electrically connected to the P electrode terminal to the first metal leg 9 1 1 of the metal bracket 9 1 through a conductive material 20 (such as silver glue), And the third metal wire 5 is used to electrically connect the N electrode terminal to the second metal leg 9 1 2 'of the metal bracket 9 1. Please refer to the fifth to eighth figures for the electrostatic protection diode. The fourth and fifth embodiments of the light emitting diode package structure 9 when the die 2 has P and N electrode terminals in the same lateral direction. The first metal leg 9 1 1 has

Page 12 M259319 IV. Creation instructions (9) The first extension 9 1 1 4 adjacent to the encapsulant 9 3 and the electrostatic protection diode located on the first extension 9 1 1 4 The dimples 9 1 1 5. As shown in the schematic cross-sectional view of the fourth embodiment of the fifth figure and the top view of the fourth embodiment of the sixth figure, the recess 9 1 1 5 is provided in the middle portion of the first extension 9 1 1 4 and does not correspond to This partition space 95 is in a connected state. As shown in the schematic cross-sectional view of the fifth embodiment of the seventh figure and the top view of the fifth embodiment of the eighth figure, the recess 9 1 1 5 is provided at a corner portion of the first extension 9 1 1 4 and The space 95 is connected to each other. In the above two embodiments, the first metal leg 9 1 1 of the metal bracket 9 1 has the recess 9115, and the recess 9115 has a depth of the height drop f difference Δ d, resulting in the electrostatic protection diode. The height difference Δd between the crystal grain 2 and the gallium nitride-based light emitting diode crystal grain 1 is perpendicular to each other. The electrostatic protection diode grains 2 of the above two embodiments are electrically connected from the N electrode terminal to the second metal leg 9 1 2 of the metal bracket 91 through the third metal wire 5 and the fourth metal wire 6 The P electrode terminal is electrically connected to the first metal leg 911 of the metal bracket 91. Therefore, the gallium nitride-based light-emitting diode grains 1 of the above embodiment are blue light-emitting diodes, the phosphor powder can be excited to emit yellow light, and the metal bracket 9 1 has a different configuration. The structure makes the electrostatic protection diode grain 2 and the gallium nitride-based light-emitting diode grain 1 have the height difference Δ d 'β to prevent light emitted from the gallium nitride-based light-emitting diode grain 1. It is absorbed by the electrostatic protection diode crystal grains 2, thereby maintaining the brightness that the light emitting diode packaging structure 9 can exhibit and avoiding the occurrence of uneven light emitting colors.

Page 13 M259319 IV. Creative Instructions (ίο) In summary, this creation can indeed achieve the intended purpose and effect, but the above disclosed technical means is only a preferred embodiment of this creation. Anyone who follows the spirit of this creation, Modifications and variations of features should be included in the scope of patent application as attached below. ❿

Page 14 M259319 The figure shows the structure of the packaged body of the two-colored hair. The first practice is the theory of the Ming Dynasty. Example Implementation-The first creation is shown in Figure 2 and the second packaged body pole is two examples of light emitting; the illustration is intended to create the illustration as a system, and the structure is shown in Figure 3 The example of the first package body pole two light hair implementation of the third embodiment of the illustration, the creation of the illustration is regarded as the system, and the construction of the fourth illustration

If the encapsulation body is extremely light-emitting, the example is the fourth embodiment; the drawings are intended to be created, and the version is considered to be a system, and the structure is shown in Figure 5. Among them, the structure of the structure is shown in Figure 6. The drawing creative idea is shown as a perspective view, and the structure of the structure is shown in Figure 7. The illustration of the package body is two. The example of the light emitting is the fourth embodiment of the package body. The example of the second light hair implements the fifth and the example of the packaged body pole two light hair implements the fifth. The creative drawing is shown as a visual section, and the structure shown in the figure is the eighth structure 1J Μ 1 a Ming body a 9 2 said pole 1 foot 2 3 2 9 9 9 Fu light frame belongs to the wall body Gold stick rubber element is known as the second and second installment of the first gold seal 2 aa feet 2 a 1 branch 9 2 3 genus wall 9 9 gold cup powder one by one to support the first firefly aaa

1

1

Page 15 M259319 Schematic description of insulating filling material 9 4 a GaN-based light-emitting diode die 1 a Sapphire substrate 1 〇a Electrostatic protection diode die 2 a Conductive material 2 0 a First, second 3rd metal wire 3a, 4a, 5a The light emitting diode packaging structure 9 of this creation 9 metal bracket 91 first metal leg 911 first bending portion 9 1 1 1 first supporting portion 9 1 1 2 first U-shaped Carrying part 9113 First extension 9114 Second metal leg 912 Recess 9 1 1 Second bending part support cup 9 2 Second support wall 9 2 2 Fluorescent powder 9 3 1 GaN-based light-emitting diode crystal Grain 1 Electrostatic protection diode crystal grain 2 Conductive material 2 0 First, second, third, fourth metal wire 3, height difference Δ d 12 1 Second support portion 9 First support wall 9 2 Encapsulant 9 3 Insulation filling material 9 12 2 1 4 4 、 5 6 Φ #

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Claims (1)

M259319 V. The scope of the patent application: Golden feet; Static system electrical connection protection diode set up: The grain system body is connected to the gold-encapsulated gallium system light-emitting 2, structure, of which diode) " 3. Structure, where 4, structure, where height. 5, structure, of which extremes. The diode belongs to the bracket and the difference between the nitrogen protection degree and the metal branch. The diode is covered by the patent protection. The patent protection system is patented. The patent difference is the patent protection protection. The gallium-based diode is set up; the essence of the frame is covered by a metal, the metal surrounds the first pole crystal, the diode surrounds the first, and the ring surrounds the first pole, at least the Dawei first pole crystal, and the first diode. The body 0 ’s luminescence, the zener ’s luminescence, or > 5th glue glue luminous electrical protective body packaging structure includes: a first and a second metal branch in a separated state, a light-emitting diode-type bracket, which is electrically protected to the Gold body grains and the static is a high mounted on the P, N electric bracket mounted colloidal diodes, such as the application of the static electricity or a momentary application of the package, such as the application of the height, such as the electrostatic gallium nitride light-emitting one and the second metal The light-emitting diode crystal grains and the nitridation, the nitrided second metal leg, the second metal leg, the second metal leg, and the electric protection bracket, the above-mentioned particle system is (TVS) (the above-mentioned oxygen resin project) Described in the The light-emitting particle system according to the item has 9 legs of upper and lower diode crystal grains, the electrostatic particle system is opposite and above the gallium-based light-emitting diode, and the light-emitting wire is electrically connected to the metal leg; and Die, the nitride diode package junction diode (Zener diode package junction resin material. Diode package junction Diode package junction diode P, N electrical Page 17 M259319 5. The scope of patent application 6, such as the scope of patent application, in which the first metal leg system and the water-proof diode crystal grain system of the first bending part are set to the 7, such as the patent application The first range is where the first metal leg is the bottom surface of the ESD diode chip. 8. If the scope of the patent application is the first one, the second metal leg system and the second light-emitting diode crystal grain system are provided. The polar body ^ 2 to the f body of the metal stent is said to be in the second metal leg structure 3 of the third metal lead frame by T :; please patent the scope, 3, P λ to the electrostatic protection diode P, N electrode terminal. The mounting structure I is complex: the scope of the patent is different from the first gold first extension, ... ^ ^ m and the cavity located in the first grain. Structure Anti-structure Structure Structure The light-emitting diode seal described in item 5 includes a first support portion that extends downwardly at an obliquely downward direction, and a first support portion that extends statically. The light-emitting diode package described in Item 5 includes a first U-shaped bearing extending downwardly. The light-emitting diode package described in Item 5 provided in the first U-shaped load bearing portion includes an inclined upward extension. The second bent and extended second supporting portion is nitrided to the second supporting portion. The light-emitting diode packaged crystal particles described in item 5 are electrically connected to the first metal leg through a conductive material, and the electrostatic protection diode is electrically connected to the N electrode terminal to the metal leg. Granular ^ light emitting diode package, /, at the same time located on the upper side of the 10th project, +, feet with the two light emitting diode seal 1 extension 2 "adhesive colloid adjacent and can be accommodated The static electricity protection M18 page 18 M259319 V. Application scope 1 2. The light-emitting diode packaging structure described in item 11 of the scope of patent application, wherein the recess is provided in the middle portion of the first extension portion. 13 3. The light emitting diode package structure according to item 11 of the scope of patent application, wherein the first metal leg is spaced apart from the second metal leg by a space, and the cavity is connected to the space 14. The light-emitting diode packaging structure as described in item 11 of the scope of patent application, wherein the electrostatic protection diode crystal grains are electrically connected to the N electrode terminal to the metal bracket through a third metal wire. The second metal leg and the fourth metal wire are electrically connected Connect the P electrode terminal to the first metal leg of the metal bracket. Page 19