TWI868340B - Titanium oxide, powder, powder composition, solid composition, liquid composition, and molded body - Google Patents
Titanium oxide, powder, powder composition, solid composition, liquid composition, and molded body Download PDFInfo
- Publication number
- TWI868340B TWI868340B TW110111265A TW110111265A TWI868340B TW I868340 B TWI868340 B TW I868340B TW 110111265 A TW110111265 A TW 110111265A TW 110111265 A TW110111265 A TW 110111265A TW I868340 B TWI868340 B TW I868340B
- Authority
- TW
- Taiwan
- Prior art keywords
- powder
- titanium oxide
- composition
- titanium
- thermal expansion
- Prior art date
Links
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 title claims abstract description 103
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 title claims abstract description 102
- 239000000843 powder Substances 0.000 title claims description 107
- 239000000203 mixture Substances 0.000 title claims description 73
- 239000008247 solid mixture Substances 0.000 title claims description 34
- 239000007788 liquid Substances 0.000 title claims description 26
- 239000010936 titanium Substances 0.000 claims abstract description 82
- 229910052751 metal Inorganic materials 0.000 claims abstract description 73
- 239000002184 metal Substances 0.000 claims abstract description 51
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 46
- 150000002739 metals Chemical class 0.000 claims abstract description 19
- 238000002441 X-ray diffraction Methods 0.000 claims abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 229910052758 niobium Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 229910052706 scandium Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- 229910052779 Neodymium Inorganic materials 0.000 claims description 2
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 2
- 229910052788 barium Inorganic materials 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 229910052712 strontium Inorganic materials 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 description 64
- 238000005245 sintering Methods 0.000 description 42
- 229920005989 resin Polymers 0.000 description 33
- 239000011347 resin Substances 0.000 description 33
- 238000000034 method Methods 0.000 description 26
- 239000011812 mixed powder Substances 0.000 description 26
- 230000000052 comparative effect Effects 0.000 description 25
- 239000013078 crystal Substances 0.000 description 20
- 238000010438 heat treatment Methods 0.000 description 20
- 239000002245 particle Substances 0.000 description 20
- 239000011651 chromium Substances 0.000 description 15
- 239000002904 solvent Substances 0.000 description 14
- 239000000126 substance Substances 0.000 description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 229910052799 carbon Inorganic materials 0.000 description 12
- 238000001723 curing Methods 0.000 description 12
- 239000002994 raw material Substances 0.000 description 12
- 239000004570 mortar (masonry) Substances 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 229910052910 alkali metal silicate Inorganic materials 0.000 description 9
- 238000002156 mixing Methods 0.000 description 9
- 239000010955 niobium Substances 0.000 description 9
- -1 Ti 2 O 3 and TiO 2 Chemical class 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 8
- 229920005992 thermoplastic resin Polymers 0.000 description 8
- 206010021143 Hypoxia Diseases 0.000 description 7
- 229920001187 thermosetting polymer Polymers 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000178 monomer Substances 0.000 description 6
- 238000000634 powder X-ray diffraction Methods 0.000 description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 239000000945 filler Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 4
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 4
- 230000001186 cumulative effect Effects 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical class [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 238000002411 thermogravimetry Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 235000010724 Wisteria floribunda Nutrition 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 239000010431 corundum Substances 0.000 description 3
- 238000007731 hot pressing Methods 0.000 description 3
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229920000728 polyester Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 239000011135 tin Substances 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229920000106 Liquid crystal polymer Polymers 0.000 description 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 2
- 239000004962 Polyamide-imide Substances 0.000 description 2
- 239000004695 Polyether sulfone Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910021536 Zeolite Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 229910000019 calcium carbonate Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000004927 clay Substances 0.000 description 2
- 229910052570 clay Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052622 kaolinite Inorganic materials 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 239000010445 mica Substances 0.000 description 2
- 229910052618 mica group Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229920001568 phenolic resin Polymers 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- QIWKUEJZZCOPFV-UHFFFAOYSA-N phenyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC1=CC=CC=C1 QIWKUEJZZCOPFV-UHFFFAOYSA-N 0.000 description 2
- 235000011007 phosphoric acid Nutrition 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920002312 polyamide-imide Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920006393 polyether sulfone Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical compound C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 description 2
- 238000000790 scattering method Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000000454 talc Substances 0.000 description 2
- 229910052623 talc Inorganic materials 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000010457 zeolite Substances 0.000 description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000005995 Aluminium silicate Substances 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PMPVIKIVABFJJI-UHFFFAOYSA-N Cyclobutane Chemical compound C1CCC1 PMPVIKIVABFJJI-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 101001121408 Homo sapiens L-amino-acid oxidase Proteins 0.000 description 1
- 239000005909 Kieselgur Substances 0.000 description 1
- 102100026388 L-amino-acid oxidase Human genes 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229920002292 Nylon 6 Polymers 0.000 description 1
- 229920002302 Nylon 6,6 Polymers 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- RWWJXIAEEFWUSU-UHFFFAOYSA-K P(=O)([O-])([O-])[O-].[W+4].[Zr+4] Chemical compound P(=O)([O-])([O-])[O-].[W+4].[Zr+4] RWWJXIAEEFWUSU-UHFFFAOYSA-K 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 229930182556 Polyacetal Natural products 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000004111 Potassium silicate Substances 0.000 description 1
- 239000006004 Quartz sand Substances 0.000 description 1
- 238000003991 Rietveld refinement Methods 0.000 description 1
- 101100012902 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FIG2 gene Proteins 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- 229910009973 Ti2O3 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- FMRLDPWIRHBCCC-UHFFFAOYSA-L Zinc carbonate Chemical compound [Zn+2].[O-]C([O-])=O FMRLDPWIRHBCCC-UHFFFAOYSA-L 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- KYNKUCOQLYEJPH-UHFFFAOYSA-N [K][Ti] Chemical compound [K][Ti] KYNKUCOQLYEJPH-UHFFFAOYSA-N 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 1
- 239000005456 alcohol based solvent Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 235000012211 aluminium silicate Nutrition 0.000 description 1
- DIZPMCHEQGEION-UHFFFAOYSA-H aluminium sulfate (anhydrous) Chemical compound [Al+3].[Al+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O DIZPMCHEQGEION-UHFFFAOYSA-H 0.000 description 1
- OJMOMXZKOWKUTA-UHFFFAOYSA-N aluminum;borate Chemical compound [Al+3].[O-]B([O-])[O-] OJMOMXZKOWKUTA-UHFFFAOYSA-N 0.000 description 1
- UJOHNXQDVUADCG-UHFFFAOYSA-L aluminum;magnesium;carbonate Chemical compound [Mg+2].[Al+3].[O-]C([O-])=O UJOHNXQDVUADCG-UHFFFAOYSA-L 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 239000000440 bentonite Substances 0.000 description 1
- 229910000278 bentonite Inorganic materials 0.000 description 1
- SVPXDRXYRYOSEX-UHFFFAOYSA-N bentoquatam Chemical compound O.O=[Si]=O.O=[Al]O[Al]=O SVPXDRXYRYOSEX-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- QHIWVLPBUQWDMQ-UHFFFAOYSA-N butyl prop-2-enoate;methyl 2-methylprop-2-enoate;prop-2-enoic acid Chemical compound OC(=O)C=C.COC(=O)C(C)=C.CCCCOC(=O)C=C QHIWVLPBUQWDMQ-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000000378 calcium silicate Substances 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 229910001919 chlorite Inorganic materials 0.000 description 1
- 229910052619 chlorite group Inorganic materials 0.000 description 1
- QBWCMBCROVPCKQ-UHFFFAOYSA-N chlorous acid Chemical compound OCl=O QBWCMBCROVPCKQ-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- GUJOJGAPFQRJSV-UHFFFAOYSA-N dialuminum;dioxosilane;oxygen(2-);hydrate Chemical compound O.[O-2].[O-2].[O-2].[Al+3].[Al+3].O=[Si]=O.O=[Si]=O.O=[Si]=O.O=[Si]=O GUJOJGAPFQRJSV-UHFFFAOYSA-N 0.000 description 1
- KEWYKJOOCFOYTD-UHFFFAOYSA-N dipotassium;oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[K+].[K+].[Ti+4] KEWYKJOOCFOYTD-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001227 electron beam curing Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000004210 ether based solvent Substances 0.000 description 1
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000010440 gypsum Substances 0.000 description 1
- 229910052602 gypsum Inorganic materials 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- PAZHGORSDKKUPI-UHFFFAOYSA-N lithium metasilicate Chemical compound [Li+].[Li+].[O-][Si]([O-])=O PAZHGORSDKKUPI-UHFFFAOYSA-N 0.000 description 1
- 229910052912 lithium silicate Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 239000000391 magnesium silicate Substances 0.000 description 1
- 229910052919 magnesium silicate Inorganic materials 0.000 description 1
- 235000019792 magnesium silicate Nutrition 0.000 description 1
- 229910052914 metal silicate Inorganic materials 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052901 montmorillonite Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920001470 polyketone Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920001955 polyphenylene ether Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 229910052913 potassium silicate Inorganic materials 0.000 description 1
- NNHHDJVEYQHLHG-UHFFFAOYSA-N potassium silicate Chemical compound [K+].[K+].[O-][Si]([O-])=O NNHHDJVEYQHLHG-UHFFFAOYSA-N 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 229910052903 pyrophyllite Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- GQUJEMVIKWQAEH-UHFFFAOYSA-N titanium(III) oxide Chemical compound O=[Ti]O[Ti]=O GQUJEMVIKWQAEH-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- BIKXLKXABVUSMH-UHFFFAOYSA-N trizinc;diborate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]B([O-])[O-].[O-]B([O-])[O-] BIKXLKXABVUSMH-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001132 ultrasonic dispersion Methods 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 239000010456 wollastonite Substances 0.000 description 1
- 229910052882 wollastonite Inorganic materials 0.000 description 1
- 239000011667 zinc carbonate Substances 0.000 description 1
- 229910000010 zinc carbonate Inorganic materials 0.000 description 1
- 235000004416 zinc carbonate Nutrition 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G23/00—Compounds of titanium
- C01G23/04—Oxides; Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
一種鈦氧化物,其滿足以下要件1~3: 要件1:當T=25℃時,A(T)未達0.3780; A(T)為於溫度T時(上述鈦氧化物之a軸(短軸)之晶格常數)/(上述鈦氧化物之c軸(長軸)之晶格常數),上述各晶格常數係由上述鈦氧化物之X射線繞射測定獲得; 要件2:含有鈦以外之金屬及/或半金屬元素; 要件3:鈦以外之金屬及半金屬元素之總莫耳含量為鈦之莫耳含量以下。A titanium oxide that meets the following requirements 1 to 3: Requirement 1: When T = 25°C, A(T) does not reach 0.3780; A(T) is (lattice constant of the a-axis (short axis) of the above titanium oxide)/(lattice constant of the c-axis (long axis) of the above titanium oxide) at temperature T, and the above lattice constants are obtained by X-ray diffraction measurement of the above titanium oxide; Requirement 2: Contains metals and/or semi-metallic elements other than titanium; Requirement 3: The total molar content of metals and semi-metallic elements other than titanium is less than the molar content of titanium.
Description
本發明係關於一種鈦氧化物、粉體、粉體組合物、固體組合物、液體組合物、及成形體。The present invention relates to a titanium oxide, a powder, a powder composition, a solid composition, a liquid composition, and a formed body.
已知為降低固體組合物之熱線膨脹係數,而添加熱線膨脹係數之值較小之填料。It is known that in order to reduce the thermal expansion coefficient of a solid composition, a filler having a smaller thermal expansion coefficient is added.
例如,專利文獻1中揭示了作為填充材料之磷酸鎢鋯,其顯示負熱線膨脹係數。 [先前技術文獻] [專利文獻]For example, Patent Document 1 discloses tungsten zirconium phosphate as a filler material, which exhibits a negative thermal expansion coefficient. [Prior Art Document] [Patent Document]
專利文獻1:日本專利特開2018-2577號公報Patent document 1: Japanese Patent Publication No. 2018-2577
[發明所欲解決之問題][The problem the invention is trying to solve]
然而,對於先前之材料來說,並非一定能充分降低熱線膨脹係數。However, previous materials may not necessarily be able to sufficiently reduce the thermal expansion coefficient.
又,在應用上重要的是可對應各用途中使用之溫度區域來控制熱線膨脹係數。例如,由於半導體密封用之樹脂材料通常於200℃以下使用,故當添加於半導體密封用之樹脂材料時,於200℃以下具有絕對值較大之負熱線膨脹係數之材料較佳。尤其是若能夠調整材料具有絕對值最大之負熱線膨脹係數時之溫度,則能夠設計出藉由調整該材料之添加量,而具有與用途匹配之熱線膨脹係數的複合材料。In addition, it is important to control the thermal expansion coefficient in accordance with the temperature range used in each application. For example, since the resin material for semiconductor sealing is usually used below 200°C, when added to the resin material for semiconductor sealing, it is better to use a material with a negative thermal expansion coefficient with a large absolute value below 200°C. In particular, if the temperature at which the material has the largest absolute negative thermal expansion coefficient can be adjusted, a composite material with a thermal expansion coefficient that matches the application can be designed by adjusting the amount of the material added.
本發明係鑒於上述情況而完成者,其目的在於提供一種於相對較低之溫度區域內具有絕對值最大之負熱線膨脹係數的材料。 [解決問題之技術手段]The present invention is completed in view of the above situation, and its purpose is to provide a material having a negative thermal expansion coefficient with the largest absolute value in a relatively low temperature range. [Technical means to solve the problem]
本發明者等人進行了各種研究,結果完成了本發明。即,本發明提供以下發明。The inventors of the present invention have conducted various studies and have completed the present invention as a result. That is, the present invention provides the following inventions.
本發明之鈦氧化物滿足以下要件1~3: 要件1:當T=25℃時,A(T)未達0.3780; A(T)為溫度T時(上述鈦氧化物之a軸(短軸)之晶格常數)/(上述鈦氧化物之c軸(長軸)之晶格常數),上述各晶格常數係由上述鈦氧化物之X射線繞射測定獲得; 要件2:含有鈦以外之金屬及/或半金屬元素; 要件3:鈦以外之金屬及半金屬元素之總莫耳含量為鈦之莫耳含量以下。The titanium oxide of the present invention meets the following requirements 1 to 3: Requirement 1: When T = 25°C, A(T) does not reach 0.3780; A(T) is (lattice constant of the a-axis (short axis) of the above-mentioned titanium oxide)/(lattice constant of the c-axis (long axis) of the above-mentioned titanium oxide) at temperature T, and the above-mentioned lattice constants are obtained by X-ray diffraction measurement of the above-mentioned titanium oxide; Requirement 2: Contains metals and/or semi-metallic elements other than titanium; Requirement 3: The total molar content of metals and semi-metallic elements other than titanium is less than the molar content of titanium.
此處,當T=25℃時,上述要件1之A(T)可為0.3774以下。Here, when T=25°C, A(T) of the above requirement 1 can be less than 0.3774.
上述鈦以外之金屬及/或半金屬元素可選自屬於第3~第6週期之元素群。The metal and/or semi-metal element other than titanium mentioned above can be selected from the element group belonging to the 3rd to 6th periods.
本發明之粉體為上述鈦氧化物之粉體。The powder of the present invention is the powder of the titanium oxide mentioned above.
本發明之粉體組合物包含上述粉體。The powder composition of the present invention comprises the above-mentioned powder.
本發明之固體組合物包含上述粉體或上述粉體組合物。The solid composition of the present invention comprises the above-mentioned powder or the above-mentioned powder combination.
本發明之液體組合物包含上述粉體或上述粉體組合物。The liquid composition of the present invention comprises the above-mentioned powder or the above-mentioned powder composition.
本發明之成形體為上述粉體或上述粉體組合物之成形體。 [發明之效果]The molded body of the present invention is a molded body of the above-mentioned powder or the above-mentioned powder combination. [Effect of the invention]
根據本發明,可提供一種於相對較低之溫度區域內具有絕對值最大之負熱線膨脹係數的材料。According to the present invention, a material having a negative thermal expansion coefficient with a maximum absolute value in a relatively low temperature region can be provided.
以下,對本發明之適宜實施方式進行詳細說明。但是,本發明並非限定於以下實施方式。The following describes the preferred embodiments of the present invention in detail. However, the present invention is not limited to the following embodiments.
<鈦氧化物> 本發明之鈦氧化物滿足以下要件1~3。<Titanium oxide> The titanium oxide of the present invention satisfies the following requirements 1 to 3.
要件1:當T=25℃時,A(T)未達0.3780。 A(T)為於溫度T時(上述鈦氧化物之a軸(短軸)之晶格常數)/(上述鈦氧化物之c軸(長軸)之晶格常數),上述各晶格常數係由上述鈦氧化物之X射線繞射測定獲得。Requirement 1: When T = 25°C, A(T) does not reach 0.3780. A(T) is (lattice constant of the a-axis (short axis) of the above-mentioned titanium oxide)/(lattice constant of the c-axis (long axis) of the above-mentioned titanium oxide) at temperature T. The above-mentioned lattice constants are obtained by X-ray diffraction measurement of the above-mentioned titanium oxide.
要件2:含有鈦以外之金屬及/或半金屬元素。Requirement 2: Contains metals and/or semi-metallic elements other than titanium.
要件3:鈦以外之金屬及半金屬元素之總莫耳含量為鈦之莫耳含量以下。Requirement 3: The total molar content of metals and semi-metallic elements other than titanium is less than the molar content of titanium.
A(T)之定義中之晶格常數係由粉末X射線繞射測定特定。作為解析方法,有里特沃爾德法、及基於最小平方法之擬合解析。The lattice constant in the definition of A(T) is determined by powder X-ray diffraction measurement. There are two analytical methods: the Rietveld method and the least squares method.
本說明書中,於由粉末X射線繞射測定特定之晶體結構中將與最小晶格常數對應之軸設為a軸,將與最大晶格常數對應之軸設為c軸。將晶格之a軸之長度與c軸之長度分別設為a軸長、c軸長。In this specification, the axis corresponding to the minimum lattice constant in the crystal structure determined by powder X-ray diffraction is referred to as the a-axis, and the axis corresponding to the maximum lattice constant is referred to as the c-axis. The length of the a-axis and the length of the c-axis of the lattice are referred to as the a-axis length and the c-axis length, respectively.
A(T)係表示於溫度T時晶軸之長度之各向異性大小的參數。A之值越大,a軸長相對於c軸長越大,A之值越小,a軸長相對於c軸長越小。A(T) is a parameter that indicates the anisotropy of the length of the crystal axis at temperature T. The larger the value of A, the longer the length of the a-axis is relative to the length of the c-axis, and the smaller the value of A, the smaller the length of the a-axis is relative to the length of the c-axis.
當T=25℃時,本發明之鈦氧化物之A(T)之值未達0.3780,較佳為0.3778以下,更佳為0.3776以下,進而較佳為0.3774以下,更進一步較佳為0.3772以下。藉由使A(T)之值為該範圍內,可有效降低具有絕對值最大之負熱線膨脹係數之溫度。When T = 25 ° C, the value of A(T) of the titanium oxide of the present invention is less than 0.3780, preferably less than 0.3778, more preferably less than 0.3776, further preferably less than 0.3774, and further preferably less than 0.3772. By making the value of A(T) within this range, the temperature of the negative thermal expansion coefficient with the maximum absolute value can be effectively reduced.
當T=25℃時,A(T)之值之下限值較佳為0.3500以上,更佳為0.3600以上,進而較佳為0.3710以上。藉由使A(T)之值之下限值為該範圍內,結構穩定性增加,形成熱穩定之結構。When T=25°C, the lower limit of the value of A(T) is preferably 0.3500 or more, more preferably 0.3600 or more, and further preferably 0.3710 or more. By setting the lower limit of the value of A(T) within this range, the structural stability is increased, and a thermally stable structure is formed.
又,當T=100℃時,A(T)之值較佳為0.3780以下,更佳為0.3769以下,進而較佳為0.3765以下。藉由使A(T)之值為該範圍內,可有效降低具有絕對值最大之負熱線膨脹係數之溫度。Furthermore, when T=100°C, the value of A(T) is preferably 0.3780 or less, more preferably 0.3769 or less, and further preferably 0.3765 or less. By making the value of A(T) within this range, the temperature at which the absolute maximum negative thermal expansion coefficient is obtained can be effectively reduced.
當T=100℃時,A(T)之值之下限值較佳為0.3500以上,更佳為0.3600以上,進而較佳為0.3710以上。藉由使A(T)之值之下限值為該範圍內,結構穩定性增加,形成熱穩定之結構。When T=100°C, the lower limit of the value of A(T) is preferably 0.3500 or more, more preferably 0.3600 or more, and further preferably 0.3710 or more. By setting the lower limit of the value of A(T) within this range, the structural stability is increased, and a thermally stable structure is formed.
根據鈦氧化物之晶體之種類,晶體結構於特定之溫度範圍內會因結構相轉移而產生變化。本說明書中,於某溫度T時之晶體結構中將晶體晶格常數最大之軸設為c軸,將晶體晶格常數最小之軸設為a軸。於三斜晶系、單斜晶系、長方晶系、四方晶系、六方晶系、菱方晶系中之任一晶系中,a軸、c軸均為上述定義。Depending on the type of titanium oxide crystal, the crystal structure changes due to structural phase transition within a specific temperature range. In this specification, in the crystal structure at a certain temperature T, the axis with the largest crystal lattice constant is set as the c-axis, and the axis with the smallest crystal lattice constant is set as the a-axis. In any of the triclinic system, monoclinic system, rectangular system, tetragonal system, hexagonal system, and rhombohedral system, the a-axis and c-axis are defined as above.
本發明之鈦氧化物含有鈦以外之金屬及/或半金屬元素。即,鈦氧化物可含有1種或2種以上鈦以外之金屬元素,亦可含有1種或2種以上半金屬元素,還可含有1種或2種以上鈦以外之金屬元素與1種或2種以上半金屬元素的組合。The titanium oxide of the present invention contains metals other than titanium and/or semi-metallic elements. That is, the titanium oxide may contain one or more metal elements other than titanium, may contain one or more semi-metallic elements, or may contain a combination of one or more metal elements other than titanium and one or more semi-metallic elements.
本發明之鈦氧化物所含有之鈦以外之金屬及/或半金屬元素較佳為選自屬於第3~第6週期之元素群,進而較佳為選自屬於第3~第5週期之元素群。藉由選自該等元素群,可獲得熱穩定化合物。The metal and/or semi-metal element other than titanium contained in the titanium oxide of the present invention is preferably selected from the element group belonging to the 3rd to 6th period, and more preferably selected from the element group belonging to the 3rd to 5th period. By selecting from these element groups, a thermally stable compound can be obtained.
從可有效降低具有絕對值最大之負熱線膨脹係數之溫度的觀點出發,作為屬於上述第3週期之元素,較佳為Mg、Al;作為屬於第4週期之元素,較佳為Ca、Sc、V、Cr、Mn、Fe、Co、Ni、Cu、Zn、Ga、Ge;作為屬於第5週期之元素,較佳為Sr、Y、Zr、Nb、Mo、In、Sn、Sb、Te;作為屬於第6週期之元素,較佳為Cs、Ba、La、Ce、Pr、Nd、W、Bi。尤其是Al、Sc、Cr、Mn、Fe、Co、Ni、Cu、Zn、Ga、Zr、Nb、Mo、Sb較佳,尤佳為Al、Cr、Nb。From the viewpoint of being able to effectively reduce the temperature of the negative thermal expansion coefficient with the largest absolute value, the elements belonging to the third period are preferably Mg and Al; the elements belonging to the fourth period are preferably Ca, Sc, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, and Ge; the elements belonging to the fifth period are preferably Sr, Y, Zr, Nb, Mo, In, Sn, Sb, and Te; the elements belonging to the sixth period are preferably Cs, Ba, La, Ce, Pr, Nd, W, and Bi. In particular, Al, Sc, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Zr, Nb, Mo, and Sb are preferred, and Al, Cr, and Nb are particularly preferred.
本發明之鈦氧化物中之鈦以外之金屬及半金屬元素的總莫耳含量為鈦之莫耳含量以下。The total molar content of metals and semi-metallic elements other than titanium in the titanium oxide of the present invention is less than the molar content of titanium.
從顯示絕對值較大之負熱線膨脹係數之觀點出發,本發明之鈦氧化物中之鈦以外之金屬及半金屬元素的總莫耳含量較佳為鈦之莫耳含量之50%以下,更佳為30%以下,進而較佳為20%以下,特佳為15%以下。From the viewpoint of showing a negative thermal expansion coefficient with a relatively large absolute value, the total molar content of metals and semi-metallic elements other than titanium in the titanium oxide of the present invention is preferably less than 50% of the molar content of titanium, more preferably less than 30%, further preferably less than 20%, and particularly preferably less than 15%.
又,從可有效降低具有絕對值最大之負熱線膨脹係數之溫度之觀點出發,本發明之鈦氧化物中鈦以外之金屬及半金屬元素的總莫耳含量較佳為大於鈦之莫耳含量之0.5%,較佳為1%以上,更佳為3%以上,進而較佳為5%以上。Furthermore, from the perspective of effectively lowering the temperature at which the negative thermal expansion coefficient with the largest absolute value can be obtained, the total molar content of metals and semi-metallic elements other than titanium in the titanium oxide of the present invention is preferably greater than 0.5% of the molar content of titanium, more preferably greater than 1%, more preferably greater than 3%, and even more preferably greater than 5%.
本發明之鈦氧化物較佳為具有鋼玉結構。藉由為鋼玉結構,可顯示絕對值較大之負熱線膨脹係數。The titanium oxide of the present invention preferably has a corundum structure. By having a corundum structure, it can exhibit a negative thermal expansion coefficient with a relatively large absolute value.
作為晶系,並無特別限定,但要想可顯示絕對值較大之負熱線膨脹係數,較佳為菱方晶系。作為空間群,較佳為歸屬於R-3c。The crystal system is not particularly limited, but a rhombohedral system is preferred in order to exhibit a negative thermal expansion coefficient with a relatively large absolute value. The space group is preferably R-3c.
作為本發明之鈦氧化物之組成式,較佳為由Ti2 - x Mx O3 - δ (x=0.02~0.66,δ=-0.32~0.40)表示,進而較佳為組成式由Ti2 - x Mx O3 - δ (x=0.06~0.40,δ=-0.20~0.20)表示,尤佳為組成式由Ti2 - x Mx O3 - δ (x=0.10~0.30,δ=-0.10~0.10)表示。但是,M係指鈦以外之金屬及/或半金屬元素。 藉由使x、δ為上述範圍內,本發明之鈦氧化物之熱穩定性提高,且負熱膨脹係數之絕對值變大。 再者,當M包含選自由鈦以外之金屬及半金屬元素所組成之群中之2種以上元素時,M之下標x表示該等元素之總莫耳比。當M包含2種以上元素時,M之各元素間之莫耳比並無特別限制。The composition formula of the titanium oxide of the present invention is preferably represented by Ti 2 - x M x O 3 - δ (x = 0.02 to 0.66, δ = -0.32 to 0.40), more preferably represented by Ti 2 - x M x O 3 - δ (x = 0.06 to 0.40, δ = -0.20 to 0.20), and particularly preferably represented by Ti 2 - x M x O 3 - δ (x = 0.10 to 0.30, δ = -0.10 to 0.10). However, M refers to a metal and/or semi-metal element other than titanium. By making x and δ within the above range, the thermal stability of the titanium oxide of the present invention is improved, and the absolute value of the negative thermal expansion coefficient becomes larger. Furthermore, when M includes two or more elements selected from the group consisting of metals and semi-metallic elements other than titanium, the subscript x under M represents the total molar ratio of the elements. When M includes two or more elements, the molar ratio between the elements of M is not particularly limited.
本發明中,上述δ表示鈦氧化物之氧缺陷量,可藉由熱重量分析試驗算出。將藉由熱重量分析法對氧缺陷量δ進行測定之方法示於以下。 於乾燥空氣之流動下對鈦氧化物進行加熱以使之氧化,直至實質上重量再無增加。可基於直至加熱結束為止之重量增加量而算出δ。作為測定裝置,例如,可使用熱重量分析裝置TGDTA6300AST-2(精工電子奈米科技公司製造)。In the present invention, the above δ represents the oxygen deficiency amount of titanium oxide, which can be calculated by thermogravimetric analysis. The method for measuring the oxygen deficiency amount δ by thermogravimetric analysis is shown below. Titanium oxide is heated under the flow of dry air to oxidize it until the weight does not increase substantially. δ can be calculated based on the weight increase until the end of heating. As a measuring device, for example, a thermogravimetric analyzer TGDTA6300AST-2 (manufactured by Seiko Nanotech Corporation) can be used.
根據本實施方式之鈦氧化物,可相對降低顯示絕對值最大之負熱膨脹係數之溫度,例如,可設為未達190℃、180℃以下、175℃以下。 根據本實施方式之鈦氧化物,亦可使絕對值最大之負熱膨脹係數為-5 ppm/℃以下、-10 ppm/℃以下、-15 ppm/℃以下、-20 ppm/℃以下、-25 ppm/℃以下。According to the titanium oxide of this embodiment, the temperature showing the absolute maximum negative thermal expansion coefficient can be relatively lowered, for example, it can be set to less than 190°C, below 180°C, and below 175°C. According to the titanium oxide of this embodiment, the absolute maximum negative thermal expansion coefficient can also be set to below -5 ppm/°C, below -10 ppm/°C, below -15 ppm/°C, below -20 ppm/°C, and below -25 ppm/°C.
本發明之鈦氧化物可為粉體。該粉體可適宜地用作為了控制固體組合物之熱膨脹率而添加於固體組合物中之填料。The titanium oxide of the present invention can be in the form of powder. The powder can be suitably used as a filler added to a solid composition in order to control the thermal expansion rate of the solid composition.
鈦氧化物之粉體之D90較佳為0.5 μm以上70 μm以下。D90較佳為0.6 μm以上,更佳為0.7 μm以上。D90較佳為60 μm以下,更佳為40 μm以下。若D90為此種範圍內,則塗佈性提高。若D90為0.5 μm以上,則難以製作凝集粒子,與樹脂等基質材料混練時之均勻性較易提高。D50較佳為0.5 μm以上60 μm以下。若D50為60 μm以下,則有塗佈性較易提高之趨勢。若D50為0.5 μm以上,則難以製作凝集粒子,與樹脂等基質材料混練時之均勻性較易提高。The D90 of titanium oxide powder is preferably 0.5 μm to 70 μm. D90 is preferably 0.6 μm to 0.7 μm or more, and more preferably 60 μm to 40 μm or less. If D90 is within this range, the coating property is improved. If D90 is 0.5 μm or more, it is difficult to produce agglomerated particles, and the uniformity when kneading with a matrix material such as a resin is easier to improve. D50 is preferably 0.5 μm to 60 μm or less. If D50 is 60 μm or less, there is a tendency that the coating property is easier to improve. If D50 is 0.5 μm or more, it is difficult to produce agglomerated particles, and the uniformity when kneading with a matrix material such as a resin is easier to improve.
但是,本說明書中關於D50、D90,係指在藉由雷射繞射散射法所得之體積基準累積粒徑分佈曲線中,從小粒徑開始計算累積頻率,將累積頻率為50%之粒徑設為D50,累積頻率為90%之粒徑設為D90。 藉由雷射繞射散射法測定體積基準之粒徑分佈。例如可使用Malvern Instruments Ltd.製造之雷射繞射式粒度分佈測定裝置Mastersizer 2000。以折射率為2.40來進行測定。However, D50 and D90 in this manual refer to the cumulative frequency calculated from the smallest particle size in the volume-based cumulative particle size distribution curve obtained by the laser diffraction scattering method, with the particle size with a cumulative frequency of 50% being D50 and the particle size with a cumulative frequency of 90% being D90. The volume-based particle size distribution is measured by the laser diffraction scattering method. For example, the laser diffraction particle size distribution measuring device Mastersizer 2000 manufactured by Malvern Instruments Ltd. can be used. The refractive index is 2.40 for measurement.
本發明之鈦氧化物之粉體之BET比表面積較佳為0.1 m2 /g以上20.0 m2 /g以下。The BET specific surface area of the titanium oxide powder of the present invention is preferably not less than 0.1 m 2 /g and not more than 20.0 m 2 /g.
<鈦氧化物及其粉體之製造方法> 本發明之鈦氧化物之製造方法並無特別限定。例如可藉由對鈦氧化物之原料粉末進行燒結而獲得。燒結方法並無特別限定,可為使用電爐等加熱機器之常壓燒成法,可為一面加壓一面加熱之熱壓法或熱均壓加壓燒結(HIP)法,亦可為一面加壓一面通電加熱之放電電漿燒結法。尤其是放電電漿燒結法較為適宜。<Method for producing titanium oxide and its powder> The method for producing titanium oxide of the present invention is not particularly limited. For example, it can be obtained by sintering the raw material powder of titanium oxide. The sintering method is not particularly limited, and can be a normal pressure sintering method using a heating machine such as an electric furnace, a hot pressing method or a hot isostatic pressure sintering (HIP) method in which pressure is applied while heating, or a discharge plasma sintering method in which pressure is applied while electricity is applied for heating. In particular, the discharge plasma sintering method is more suitable.
放電電漿燒結中,一面對本發明之鈦氧化物之原料之混合物進行加壓,一面對混合物通電脈衝狀電流。藉此,可於原料之混合物中產生放電以進行加熱燒結。In the discharge plasma sintering, a mixture of raw materials of titanium oxide of the present invention is pressurized while a pulse current is passed through the mixture, thereby generating discharge in the raw material mixture to heat and sinter.
為了防止所得化合物與空氣接觸而產生變質,電漿燒結步驟較佳為於氬氣、氮氣、真空等惰性氣體氛圍下來進行。In order to prevent the obtained compound from being deteriorated by contact with air, the plasma sintering step is preferably performed under an inert gas atmosphere such as argon, nitrogen, or vacuum.
電漿燒結步驟中之加壓壓力較佳為超過0 MPa且為100 MPa以下之範圍內。為了獲得高密度之第一材料,電漿燒結步驟中之加壓壓力較佳為設為10 MPa以上,更佳為設為30 MPa以上。電漿燒結步驟之加熱溫度較佳為充分低於作為目標物之鈦氧化物之熔點。The pressure applied in the plasma sintering step is preferably in the range of more than 0 MPa and less than 100 MPa. In order to obtain a high-density first material, the pressure applied in the plasma sintering step is preferably set to be greater than 10 MPa, and more preferably set to be greater than 30 MPa. The heating temperature in the plasma sintering step is preferably sufficiently lower than the melting point of the target titanium oxide.
原料粉末包含鈦源、鈦以外之金屬及/或半金屬源、及氧源。鈦源有如下例:Ti2 O3 、TiO2 等鈦氧化物、及金屬鈦。鈦以外之金屬及/或半金屬源之例為鈦以外之金屬及/或半金屬元素之氧化物、氫氧化物、及單體。氧源通常為氧化鈦、或鈦以外之金屬及/或半金屬之氧化物。即,鈦源、及鈦以外之金屬及/或半金屬源之至少1種適宜為氧化物,更佳為兩者均為氧化物。再者,當鈦源、及/或、鈦以外之金屬及/或半金屬源為氧化物時,可各自全部為氧化物,亦可各自中一部分為氧化物,剩餘部分為金屬等非氧化物。藉此,可控制產物中氧之比率,即上述式中之δ。又,藉由調整原料粉末中鈦之莫耳含量及鈦以外之金屬及/或半金屬元素之含量之比,可調整所得鈦氧化物中上述式中之x。The raw material powder includes a titanium source, a metal and/or semi-metal source other than titanium, and an oxygen source. Examples of the titanium source include titanium oxides such as Ti 2 O 3 and TiO 2 , and metallic titanium. Examples of the metal and/or semi-metal source other than titanium include oxides, hydroxides, and monomers of metal and/or semi-metal elements other than titanium. The oxygen source is usually titanium oxide or an oxide of a metal and/or semi-metal other than titanium. That is, at least one of the titanium source and the metal and/or semi-metal source other than titanium is preferably an oxide, and more preferably both are oxides. Furthermore, when the titanium source and/or the metal and/or semi-metal source other than titanium are oxides, they may all be oxides, or a part of each may be an oxide, and the rest may be a non-oxide such as a metal. In this way, the oxygen ratio in the product, i.e., δ in the above formula, can be controlled. In addition, by adjusting the ratio of the molar content of titanium and the content of metals and/or semi-metallic elements other than titanium in the raw material powder, x in the above formula in the obtained titanium oxide can be adjusted.
電漿燒結步驟可分2個階段來進行。即,可藉由如下所示之方法來實施放電電漿燒結。藉由實施此種2階段之放電電漿燒結,可去除雜質相,並且使鈦以外之金屬及/或半金屬元素更易固溶,因此較為適宜。The plasma sintering step can be performed in two stages. That is, discharge plasma sintering can be performed by the method shown below. By performing such two-stage discharge plasma sintering, impurity phases can be removed and metals and/or semi-metallic elements other than titanium can be more easily dissolved, so it is more suitable.
首先,進行第一混合步驟,即,藉由將鈦氧化物與鈦以外之金屬及/或半金屬源進行混合,而獲得第一混合粉末。接著,進行第一放電電漿燒結步驟,即,對第一混合粉末進行放電電漿燒結,而獲得第一燒結體。 繼而,進行第二混合步驟,即,將所得第一燒結體粉碎,進而於其中混合金屬鈦及鈦以外之金屬及/或半金屬源,而獲得第二混合粉末。其後,進行第二放電電漿燒結步驟,即,對第二混合粉末進行放電電漿燒結,而獲得第二燒結體。First, a first mixing step is performed, i.e., titanium oxide is mixed with a metal and/or semi-metal source other than titanium to obtain a first mixed powder. Then, a first discharge plasma sintering step is performed, i.e., the first mixed powder is subjected to discharge plasma sintering to obtain a first sintered body. Then, a second mixing step is performed, i.e., the obtained first sintered body is crushed and metallic titanium and a metal and/or semi-metal source other than titanium are mixed therein to obtain a second mixed powder. Thereafter, a second discharge plasma sintering step is performed, i.e., the second mixed powder is subjected to discharge plasma sintering to obtain a second sintered body.
藉由將所得鈦氧化物之塊狀物壓碎、篩分、粉碎等來調整粒徑分佈,藉此可獲得鈦氧化物之粉體。The obtained titanium oxide block is crushed, screened, pulverized, etc. to adjust the particle size distribution, thereby obtaining titanium oxide powder.
<包含鈦氧化物之粉體之粉體組合物> 本發明之一實施方式係包含上述鈦氧化物之粉體及其他粉體之粉體組合物,粉體組合物係粉體狀之組合物。此種粉體組合物可適宜用作用以控制後述固體組合物之熱膨脹率的填料。粉體組合物中鈦氧化物之含量並無限定,可根據含量來發揮控制熱膨脹量之功能。從高效率地控制熱膨脹量之觀點出發,上述鈦氧化物之含量可為75質量%以上,可為85%質量%以上,亦可為95質量%以上。<Powder composition containing titanium oxide powder> One embodiment of the present invention is a powder composition containing the above-mentioned titanium oxide powder and other powders, and the powder composition is a powder composition. This powder composition can be suitably used as a filler to control the thermal expansion rate of the solid composition described later. The content of titanium oxide in the powder composition is not limited, and the function of controlling the thermal expansion amount can be exerted according to the content. From the perspective of efficiently controlling the thermal expansion amount, the content of the above-mentioned titanium oxide can be 75% by mass or more, 85% by mass or more, or 95% by mass or more.
粉體組合物中除上述鈦氧化物之粉體以外的其他粉體之例有:碳酸鈣、滑石、雲母、二氧化矽、黏土、矽灰石、鈦酸鉀、硬矽鈣石、石膏纖維、硼酸鋁、芳香族聚醯胺纖維、碳纖維、玻璃纖維、玻璃薄片、聚氧苯甲醯鬚晶、玻璃氣球、碳黑、石墨、氧化鋁、氮化鋁、氮化硼、氧化鈹、鐵氧體、氧化鐵、鈦酸鋇、鈦酸鋯酸鉛、沸石、鐵粉、鋁粉、硫酸鋇、硼酸鋅、赤磷、氧化鎂、鋁碳酸鎂、氧化銻、氫氧化鋁、氫氧化鎂、碳酸鋅、TiO2 、TiO。Examples of other powders in the powder composition other than the titanium oxide powder include calcium carbonate, talc, mica, silica, clay, wollastonite, potassium titanium, hard silicate, gypsum fiber, aluminum borate, aromatic polyamide fiber, carbon fiber, glass fiber, glass flakes, polyoxybenzoyl whisker Crystal, glass balloon, carbon black, graphite, aluminum oxide, aluminum nitride, boron nitride, ceria, ferrite, iron oxide, barium titanate, lead zirconate titanate, zeolite, iron powder, aluminum powder, barium sulfate, zinc borate, red phosphorus, magnesium oxide, aluminum magnesium carbonate, antimony oxide, aluminum hydroxide, magnesium hydroxide, zinc carbonate, TiO 2 , TiO.
粉體組合物之D90、D50、BET比表面積可設定為與上述鈦氧化物之粉體之D90及D50相同。The D90, D50 and BET specific surface area of the powder composition can be set to be the same as the D90 and D50 of the above-mentioned titanium oxide powder.
粉體組合物之製造方法並無特別限定,例如將上述鈦氧化物之粉體與其他填料加以混合,並視需要藉由壓碎、篩分、粉碎等來調整粒徑分佈即可。The method for preparing the powder composition is not particularly limited. For example, the titanium oxide powder mentioned above is mixed with other fillers, and the particle size distribution is adjusted by crushing, screening, pulverizing, etc. as needed.
<成形體> 本實施方式之成形體為上述鈦氧化物之粉體或粉體組合物之成形體。本實施方式中之成形體可為由鈦氧化物之粉體或粉體組合物之燒結獲得之燒結體。<Molded body> The molded body of this embodiment is a molded body of the above-mentioned titanium oxide powder or powder combination. The molded body in this embodiment can be a sintered body obtained by sintering the titanium oxide powder or powder combination.
通常,藉由對上述粉體或粉體組合物進行燒結而獲得成形體。於此情形時,於維持鈦氧化物之晶體結構之溫度範圍內進行燒結較為適宜。Usually, the molded body is obtained by sintering the powder or powder composition. In this case, it is more appropriate to sinter within a temperature range that maintains the crystal structure of titanium oxide.
可應用各種公知之燒結方法以獲得燒結體。作為獲得燒結體之方法,可採用通常之加熱、熱壓、上述放電電漿燒結等方法。Various known sintering methods can be applied to obtain a sintered body. As a method for obtaining a sintered body, conventional heating, hot pressing, the above-mentioned discharge plasma sintering, etc. can be used.
電漿燒結之加熱溫度較佳為充分低於鈦氧化物之熔點。The heating temperature for plasma sintering is preferably sufficiently lower than the melting point of titanium oxide.
再者,本實施方式之成形體並不限於燒結體,例如,亦可為藉由粉體或粉體組合物之加壓成形而獲得之加壓粉體。Furthermore, the formed body of the present embodiment is not limited to a sintered body, and for example, may be a pressurized powder obtained by pressurizing a powder or a powder composition.
根據本實施方式之粉體或粉體組合物之成形體,可提供熱膨脹較少之構件,可極大地減少溫度變化時之構件之尺寸變化。因此,可適宜用於對由溫度引起之尺寸變化尤其敏感之裝置所使用的各種構件。The powder or powder composition molded body according to the present embodiment can provide a component with less thermal expansion, which can greatly reduce the dimensional change of the component when the temperature changes. Therefore, it can be suitably used in various components used in devices that are particularly sensitive to dimensional changes caused by temperature.
又,藉由將該粉體或粉體組合物之成形體與具有正熱線膨脹係數之其他材料組合,可將整個構件之熱線膨脹係數控制得較低。例如,若棒材之長度方向之一部分使用本實施方式之粉體之成形體,其他部分使用具有正熱線膨脹係數之材料之構件,則可根據2種材料之存在比率而自由地控制棒材之長度方向之熱線膨脹係數。例如實質上可使棒材之長度方向之熱膨脹為零。Furthermore, by combining the powder or the molded body of the powder composition with other materials having a positive thermal expansion coefficient, the thermal expansion coefficient of the entire component can be controlled to be lower. For example, if a portion of the length direction of the rod is formed using the molded body of the powder of this embodiment, and the other portion is formed using a component of a material having a positive thermal expansion coefficient, the thermal expansion coefficient of the rod in the length direction can be freely controlled according to the existence ratio of the two materials. For example, the thermal expansion of the rod in the length direction can be substantially zero.
<固體組合物> 本實施方式之固體組合物包含上述鈦氧化物之粉體或粉體組合物、及第一材料。<Solid composition> The solid composition of this embodiment includes the above-mentioned titanium oxide powder or powder composition, and the first material.
[第一材料] 作為第一材料,並無特別限定,可列舉樹脂、鹼金屬矽酸鹽、陶瓷、金屬等。第一材料可為使上述鈦氧化物彼此結合之黏合劑材料,或將上述鈦氧化物保持在分散狀態之基質材料。[First material] The first material is not particularly limited, and examples thereof include resins, alkaline metal silicates, ceramics, metals, etc. The first material may be an adhesive material that bonds the above-mentioned titanium oxides to each other, or a matrix material that keeps the above-mentioned titanium oxides in a dispersed state.
樹脂有如下例:熱塑性樹脂、及熱硬化型樹脂或活性能量線硬化型樹脂之硬化物。Examples of resins include thermoplastic resins, and hardened products of thermosetting resins or active energy ray-hardening resins.
熱硬化型樹脂有如下例:環氧樹脂、氧雜環丁烷樹脂、不飽和聚酯樹脂、醇酸樹脂、酚樹脂(酚醛清漆樹脂、可溶酚醛樹脂等)、丙烯酸樹脂、聚胺基甲酸酯樹脂、聚矽氧樹脂、聚醯亞胺樹脂、及三聚氰胺樹脂等。 活性能量線硬化型樹脂有如下例:紫外線硬化型樹脂、電子束硬化型樹脂,例如可為:丙烯酸胺基甲酸酯樹脂、環氧丙烯酸酯樹脂、丙烯酸丙烯酸酯樹脂、聚酯丙烯酸酯樹脂、苯酚甲基丙烯酸酯樹脂。 樹脂之其他例有:矽酮系、胺基甲酸酯系、橡膠系、丙烯酸系等之黏著劑。Examples of thermosetting resins include epoxy resins, cyclobutane resins, unsaturated polyester resins, alkyd resins, phenolic resins (phenolic varnish resins, soluble phenolic resins, etc.), acrylic resins, polyurethane resins, polysilicone resins, polyimide resins, and melamine resins. Examples of active energy ray-curing resins include ultraviolet-curing resins and electron beam-curing resins, such as acrylic urethane resins, epoxy acrylate resins, acrylic acrylate resins, polyester acrylate resins, and phenol methacrylate resins. Other examples of resins include silicone-based, urethane-based, rubber-based, acrylic-based adhesives, etc.
熱塑性樹脂有如下例:聚烯烴(聚乙烯、聚丙烯等)、ABS樹脂、聚醯胺(尼龍6、尼龍6,6等)、聚醯胺醯亞胺、聚酯(聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯)、液晶聚合物、聚苯醚、聚縮醛、聚碳酸酯、聚苯硫醚、聚醯亞胺、聚醚醯亞胺、聚醚碸、聚酮、聚苯乙烯、及聚醚醚酮。Examples of thermoplastic resins include polyolefins (polyethylene, polypropylene, etc.), ABS resin, polyamide (nylon 6, nylon 6,6, etc.), polyamide imide, polyester (polyethylene terephthalate, polyethylene naphthalate), liquid crystal polymer, polyphenylene ether, polyacetal, polycarbonate, polyphenylene sulfide, polyimide, polyetherimide, polyether sulfone, polyketone, polystyrene, and polyetheretherketone.
第一材料可包含1種上述樹脂,亦可包含2種以上之上述樹脂。The first material may include one of the above-mentioned resins, or may include two or more of the above-mentioned resins.
從可提高耐熱性之觀點出發,第一材料較佳為環氧樹脂、聚醚碸、液晶聚合物、聚醯亞胺、聚醯胺醯亞胺、矽酮。From the perspective of improving heat resistance, the first material is preferably epoxy resin, polyether sulfone, liquid crystal polymer, polyimide, polyamide imide, or silicone.
作為鹼金屬矽酸鹽,可列舉:矽酸鋰、矽酸鈉、矽酸鉀。第一材料可包含1種鹼金屬矽酸鹽,亦可包含2種以上之鹼金屬矽酸鹽。該等材料之耐熱性較高,故而較佳。Examples of alkali metal silicates include lithium silicate, sodium silicate, and potassium silicate. The first material may include one alkali metal silicate or two or more alkali metal silicates. These materials have higher heat resistance and are therefore preferred.
作為陶瓷,並無特別限定,可列舉:氧化鋁、二氧化矽(包含氧化矽、二氧化矽玻璃)、二氧化鈦、氧化鋯、氧化鎂、氧化鈰、氧化釔、氧化鋅、氧化鐵等氧化物系陶瓷;氮化矽、氮化鈦、氮化硼等氮化物系陶瓷;碳化矽、碳酸鈣、硫酸鋁、硫酸鋇、氫氧化鋁、鈦酸鉀、滑石、高嶺黏土、高嶺石、多水高嶺土、葉蠟石、蒙脫石、絹雲母、雲母、鎂綠泥石、膨潤土、石綿、沸石、矽酸鈣、矽酸鎂、矽藻土、石英砂等陶瓷。第一材料可包含1種陶瓷,亦可包含2種以上之陶瓷。 陶瓷可提高耐熱性,故而較佳。可藉由放電電漿燒結等來製作燒結體。The ceramics are not particularly limited, and examples thereof include oxide ceramics such as aluminum oxide, silicon dioxide (including silicon oxide and silicon dioxide glass), titanium dioxide, zirconium oxide, magnesium oxide, vanadium oxide, yttrium oxide, zinc oxide, and iron oxide; nitride ceramics such as silicon nitride, titanium nitride, and boron nitride; and ceramics such as silicon carbide, calcium carbonate, aluminum sulfate, barium sulfate, aluminum hydroxide, potassium titanium oxide, talc, kaolin clay, kaolinite, kaolinite, pyrophyllite, montmorillonite, sericite, mica, chlorite, bentonite, sponge, zeolite, calcium silicate, magnesium silicate, diatomaceous earth, and quartz sand. The first material may include one ceramic or two or more ceramics. Ceramics are preferred because they can improve heat resistance. The sintered body can be produced by discharge plasma sintering or the like.
作為金屬,並無特別限定,可列舉:鋁、鉭、鈮、鈦、鉬、鐵、鎳、鈷、鉻、銅、銀、金、鉑、鉛、錫、鎢等金屬單質;不鏽鋼(SUS)等合金;及其等之混合物。第一材料可包含1種金屬,亦可包含2種以上之金屬。此種金屬可提高耐熱性,故而較佳。The metal is not particularly limited, and examples thereof include: single metals such as aluminum, tantalum, niobium, titanium, molybdenum, iron, nickel, cobalt, chromium, copper, silver, gold, platinum, lead, tin, and tungsten; alloys such as stainless steel (SUS); and mixtures thereof. The first material may include one metal or two or more metals. Such metals are preferred because they can improve heat resistance.
[其他成分] 固體組合物可包含除第一材料及鈦氧化物之粉體或粉體組合物以外的其他成分。例如可列舉觸媒。作為觸媒,並無特別限定,可列舉酸性化合物、鹼性化合物、有機金屬化合物等。作為酸性化合物,可使用鹽酸、硫酸、硝酸、磷酸、磷酸、甲酸、乙酸、草酸等酸。作為鹼性化合物,可使用氫氧化銨、氫氧化四甲基銨、氫氧化四乙基銨等。作為有機金屬化合物觸媒,可列舉包含鋁、鋯、錫、鈦、鋅者等。[Other components] The solid composition may contain other components in addition to the first material and the titanium oxide powder or powder composition. For example, a catalyst may be listed. As the catalyst, there is no particular limitation, and examples thereof include acidic compounds, alkaline compounds, and organic metal compounds. As acidic compounds, acids such as hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, phosphoric acid, formic acid, acetic acid, and oxalic acid may be used. As alkaline compounds, ammonium hydroxide, tetramethylammonium hydroxide, and tetraethylammonium hydroxide may be used. As organic metal compound catalysts, examples thereof include those containing aluminum, zirconium, tin, titanium, and zinc.
固體組合物中之鈦氧化物之含量並無特別限定,可根據含量來發揮控制熱膨脹之功能。固體組合物中之鈦氧化物之含量例如可設為1重量%以上,亦可為3重量%以上、5重量%以上、10重量%以上、20重量%以上、40重量%以上、70重量%以上。若鈦氧化物之含量變高,則較易發揮熱線膨脹係數之降低效果。固體組合物中之鈦氧化物之含量例如可設為99重量%以下。固體組合物中之鈦氧化物之含量可為95重量%以下,亦可為90重量%以下。The content of titanium oxide in the solid composition is not particularly limited, and the function of controlling thermal expansion can be exerted according to the content. The content of titanium oxide in the solid composition can be set to, for example, 1% by weight or more, or 3% by weight or more, 5% by weight or more, 10% by weight or more, 20% by weight or more, 40% by weight or more, or 70% by weight or more. If the content of titanium oxide increases, it is easier to exert the effect of reducing the thermal linear expansion coefficient. The content of titanium oxide in the solid composition can be set to, for example, 99% by weight or less. The content of titanium oxide in the solid composition can be 95% by weight or less, or 90% by weight or less.
固體組合物中之第一材料之含量例如可設為1重量%以上。固體組合物中之第一材料之含量可為5重量%以上,亦可為10重量%以上。固體組合物中之第一材料之含量例如可設為99重量%以下。固體組合物中之第一材料之含量亦可為97重量%以下、95重量%以下、90重量%以下、80重量%以下、60重量%以下、30重量%以下。The content of the first material in the solid composition can be, for example, 1% by weight or more. The content of the first material in the solid composition can be 5% by weight or more, or 10% by weight or more. The content of the first material in the solid composition can be, for example, 99% by weight or less. The content of the first material in the solid composition can also be 97% by weight or less, 95% by weight or less, 90% by weight or less, 80% by weight or less, 60% by weight or less, or 30% by weight or less.
本實施方式之固體組合物藉由包含本實施方式之鈦氧化物,可具有足夠低之熱線膨脹係數。根據該固體組合物,可獲得溫度變化時之尺寸變化極小之構件。因此,可適宜用於對由溫度引起之尺寸變化尤其敏感之光學構件或半導體製造裝置用構件。The solid composition of the present embodiment can have a sufficiently low thermal expansion coefficient by including the titanium oxide of the present embodiment. According to the solid composition, a component with extremely small dimensional change when the temperature changes can be obtained. Therefore, it can be suitably used in optical components or components for semiconductor manufacturing devices that are particularly sensitive to dimensional changes caused by temperature.
尤其是上述鈦氧化物由於最大之負熱膨脹係數之絕對值足夠大,故而亦可獲得具有負熱線膨脹係數之固體組合物(材料)。所謂具有負熱線膨脹係數,係指體積隨著熱線膨脹而收縮。於在具有負熱線膨脹係數之固體組合物的板之端面(側面)上接合具有正熱線膨脹係數之其他材料之板的端面而成之板中,可使板整體之與厚度方向正交之方向之熱線膨脹係數實質上為零。In particular, since the absolute value of the maximum negative thermal expansion coefficient of the titanium oxide is large enough, a solid composition (material) with a negative thermal expansion coefficient can also be obtained. The so-called negative thermal expansion coefficient means that the volume shrinks with thermal expansion. In a plate formed by joining the end surface (side surface) of a plate of a solid composition with a negative thermal expansion coefficient to the end surface of a plate of another material with a positive thermal expansion coefficient, the thermal expansion coefficient of the entire plate in a direction perpendicular to the thickness direction can be made substantially zero.
進而,可相對降低上述鈦氧化物顯示絕對值最大之負熱膨脹係數之溫度,例如可設為未達190℃。因此,可減小於未達190℃之溫度範圍內之固體組合物之熱膨脹係數。又,若將上述鈦氧化物之粉體、及Ti2 O3 等於200℃附近顯示出絕對值最大之負熱膨脹係數之材料一同添加至固體組合物中,則於廣泛溫度範圍內降低了固體組合物之熱膨脹係數,故而較佳。Furthermore, the temperature at which the titanium oxide shows the maximum absolute negative thermal expansion coefficient can be relatively lowered, for example, it can be set to less than 190°C. Therefore, the thermal expansion coefficient of the solid composition in the temperature range less than 190°C can be reduced. In addition, if the titanium oxide powder and a material such as Ti2O3 showing the maximum absolute negative thermal expansion coefficient at around 200°C are added to the solid composition, the thermal expansion coefficient of the solid composition is reduced in a wide temperature range, which is preferred.
<液體組合物> 本實施方式之液體組合物包含上述鈦氧化物之粉體或粉體組合物、及第二材料。液體組合物係於25℃具有流動性之組合物。該液體組合物可為上述固體組合物之原料。 所謂「於25℃下具有流動性」,係指向規定之容器內供給液態組合物並使液面呈水平後,使該容器傾斜45度,1小時後該液面會移動或變形。<Liquid composition> The liquid composition of this embodiment includes the above-mentioned titanium oxide powder or powder composition, and a second material. The liquid composition is a composition that is fluid at 25°C. The liquid composition can be a raw material for the above-mentioned solid composition. The so-called "fluid at 25°C" means that after the liquid composition is supplied to a specified container and the liquid surface is horizontal, the container is tilted 45 degrees, and the liquid surface will move or deform after 1 hour.
[第二材料] 第二材料為液態,且可為使上述鈦氧化物之粉體或粉體組合物分散者。第二材料可為第一材料之原料。[Second material] The second material is in liquid form and can be a dispersion of the above-mentioned titanium oxide powder or powder composition. The second material can be the raw material of the first material.
例如,當第一材料為鹼金屬矽酸鹽時,第二材料可包含鹼金屬矽酸鹽、及可溶解或分散鹼金屬矽酸鹽之溶劑。當第一材料為熱塑性樹脂時,第二材料可包含熱塑性樹脂、及可溶解或分散熱塑性樹脂之溶劑。當第一材料為熱硬化型樹脂或活性能量線硬化型樹脂之硬化物時,第二材料為硬化前之熱硬化型樹脂或活性能量線硬化型樹脂。For example, when the first material is an alkali metal silicate, the second material may include the alkali metal silicate and a solvent that can dissolve or disperse the alkali metal silicate. When the first material is a thermoplastic resin, the second material may include the thermoplastic resin and a solvent that can dissolve or disperse the thermoplastic resin. When the first material is a cured product of a thermosetting resin or an active energy ray-curing resin, the second material is the thermosetting resin or active energy ray-curing resin before curing.
硬化前之熱硬化型樹脂於室溫具有流動性,若加熱,則藉由交聯反應等而硬化。硬化前之熱硬化型樹脂可包含1種樹脂,亦可包含2種以上之樹脂。The thermosetting resin before curing is fluid at room temperature, and when heated, it is cured by a cross-linking reaction, etc. The thermosetting resin before curing may contain one resin or two or more resins.
硬化前之活性能量線硬化型樹脂於室溫下具有流動性,藉由光(UV等)或電子束等活性能量線之照射引起交聯反應等,從而實現硬化。硬化前之活性能量線硬化型樹脂包含硬化性單體及/或硬化性低聚物,視需要可進而包含溶劑及/或光起始劑。硬化性單體及硬化性低聚物之例為光硬化性單體及光硬化性低聚物。光硬化性單體之例為單官能或多官能丙烯酸酯單體。光硬化性低聚物有如下例:丙烯酸胺基甲酸酯、環氧丙烯酸酯、丙烯酸丙烯酸酯、聚酯丙烯酸酯、苯酚甲基丙烯酸酯。The active energy ray-curing resin before curing is fluid at room temperature, and is cured by causing a crosslinking reaction, etc., by irradiation with active energy rays such as light (UV, etc.) or electron beams. The active energy ray-curing resin before curing contains a curable monomer and/or a curable oligomer, and may further contain a solvent and/or a photoinitiator as needed. Examples of curable monomers and curable oligomers are photocurable monomers and photocurable oligomers. Examples of photocurable monomers are monofunctional or multifunctional acrylate monomers. Examples of photocurable oligomers include: urethane acrylate, epoxy acrylate, acrylic acrylate, polyester acrylate, and phenol methacrylate.
作為溶劑之例,可列舉醇溶劑、醚溶劑、酮溶劑、二醇溶劑、烴溶劑、非質子性極性溶劑等有機溶劑及水。又,鹼金屬矽酸鹽之情形時之溶劑例如為水。Examples of the solvent include alcohol solvents, ether solvents, ketone solvents, glycol solvents, hydrocarbon solvents, aprotic polar solvents and other organic solvents and water. In the case of alkali metal silicates, the solvent is, for example, water.
[其他成分] 本實施方式之液體組合物還可包含除第二材料及鈦氧化物之粉體或粉體組合物以外之其他成分。例如,可包含第1材料中所列舉之其他成分。[Other components] The liquid composition of this embodiment may also contain other components in addition to the second material and the titanium oxide powder or powder combination. For example, it may contain other components listed in the first material.
液體組合物中之鈦氧化物之含量並無特別限定,可從控制硬化後之固體組合物之熱膨脹量之觀點出發來適當設定。具體而言,可與第一材料相同。The content of titanium oxide in the liquid composition is not particularly limited and can be appropriately set from the perspective of controlling the thermal expansion of the solid composition after hardening. Specifically, it can be the same as the first material.
<液體組合物之製造方法> 液體組合物之製造方法並無特別限制。例如,藉由將上述鈦氧化物之粉體或粉體組合物與第二材料加以攪拌混合,可獲得液體組合物。作為攪拌方法,例如可列舉利用攪拌機之攪拌。或者,可藉由超音波處理,使鈦氧化物分散於第二材料中。<Method for producing liquid composition> The method for producing the liquid composition is not particularly limited. For example, the liquid composition can be obtained by stirring and mixing the powder or powder composition of the above-mentioned titanium oxide with the second material. As a stirring method, for example, stirring using a stirrer can be cited. Alternatively, the titanium oxide can be dispersed in the second material by ultrasonic treatment.
作為混合步驟中所使用之混合方法,例如可列舉:球磨法、自轉公轉攪拌機、葉輪回轉法、葉片回轉法、回轉薄膜法、轉子/定子混合法、膠體磨法、高壓均質法、超音波分散法。於混合步驟中,可依次進行複數種混合方法,亦可同時進行複數種混合方法。 藉由於混合步驟中使組合物均質化並實施剪切,可提高組合物之流動性及變形性。As mixing methods used in the mixing step, for example, there can be listed: ball milling, self-rotating and revolving mixer, impeller rotation method, blade rotation method, rotary film method, rotor/stator mixing method, colloid milling method, high-pressure homogenization method, ultrasonic dispersion method. In the mixing step, multiple mixing methods can be performed in sequence or simultaneously. By homogenizing the composition and applying shear in the mixing step, the fluidity and deformability of the composition can be improved.
<固體組合物之製造方法> 將上述液體組合物成形為期望形狀後,藉由使液體組合物中之第二材料轉化為第一材料,可製造出一種固體組合物,其係由鈦氧化物與第一材料複合化後所得。<Method for producing a solid composition> After the liquid composition is formed into a desired shape, a solid composition can be produced by converting the second material in the liquid composition into the first material, which is obtained by compounding titanium oxide and the first material.
例如,當第二材料包含鹼金屬矽酸鹽及可溶解或分散鹼金屬矽酸鹽之溶劑時,以及當第二材料包含熱塑性樹脂及可溶解或分散熱塑性樹脂之溶劑時,將液體組合物成形為期望形狀後,從液體組合物中除去溶劑,藉此可獲得包含鈦氧化物與第一材料(鹼金屬鹽或熱塑性樹脂)之固體組合物。For example, when the second material comprises an alkali metal silicate and a solvent that can dissolve or disperse the alkali metal silicate, and when the second material comprises a thermoplastic resin and a solvent that can dissolve or disperse the thermoplastic resin, after the liquid composition is formed into a desired shape, the solvent is removed from the liquid composition, thereby obtaining a solid composition comprising titanium oxide and the first material (alkali metal salt or thermoplastic resin).
溶劑之除去方法可採用藉由自然乾燥、真空乾燥、加熱等使溶劑蒸發之方法。從抑制產生粗大氣泡之觀點出發,在去除溶劑時,適宜一邊將混合物之溫度維持在溶劑之沸點以下一邊去除溶劑。The solvent can be removed by evaporating the solvent by natural drying, vacuum drying, heating, etc. From the viewpoint of suppressing the generation of coarse bubbles, it is appropriate to remove the solvent while maintaining the temperature of the mixture below the boiling point of the solvent.
當第二材料為熱硬化型樹脂或活性能量線硬化型樹脂時,將液體組合物成形為期望形狀後,利用熱量或活性能量線(UV等)進行液體組合物之硬化處理即可。When the second material is a thermosetting resin or an active energy ray-curing resin, after the liquid composition is formed into a desired shape, the liquid composition can be cured using heat or active energy rays (UV, etc.).
將液體組合物成形為規定形狀之方法有如下例:將液體組合物注入模具內;及將液體組合物塗佈於基板表面以形成膜狀。The method of forming the liquid composition into a predetermined shape includes, for example, injecting the liquid composition into a mold; and applying the liquid composition on the surface of a substrate to form a film.
又,當第一材料為陶瓷或金屬時,可進行如下步驟。製備第一材料之原料粉與鈦氧化物之混合物,對混合物進行熱處理以燒結第一材料之原料粉,藉此獲得包含作為燒結體之第一材料與鈦氧化物之固體組合物。視需要,可藉由退火等熱處理而對固體組合物之細孔進行調整。作為燒結方法,可採用通常之加熱、熱壓、放電電漿燒結等方法。Furthermore, when the first material is a ceramic or a metal, the following steps may be performed. A mixture of a raw material powder of the first material and titanium oxide is prepared, and the mixture is heat-treated to sinter the raw material powder of the first material, thereby obtaining a solid composition containing the first material and titanium oxide as a sintered body. If necessary, the pores of the solid composition may be adjusted by heat treatment such as annealing. As a sintering method, conventional heating, hot pressing, discharge plasma sintering, etc. may be used.
放電電漿燒結係指一面對第一材料之原料粉與鈦氧化物之混合物進行加壓,一面對混合物通電脈衝狀電流。藉此,可於第一材料之原料粉之間產生放電,從而加熱第一材料之原料粉以進行燒結。Discharge plasma sintering refers to applying pressure to a mixture of raw material powder of the first material and titanium oxide while passing a pulsed current through the mixture. This generates discharge between the raw material powder of the first material, thereby heating the raw material powder of the first material for sintering.
為防止所得化合物與空氣接觸而產生變質,電漿燒結步驟較佳為於氬氣、氮氣、真空等惰性氣體氛圍下進行。In order to prevent the obtained compound from being deteriorated by contact with air, the plasma sintering step is preferably performed under an inert gas atmosphere such as argon, nitrogen, or vacuum.
電漿燒結步驟中之加壓壓力較佳為超過0 MPa且為100 MPa以下之範圍內。為獲得高密度之第一材料,電漿燒結步驟中之加壓壓力較佳為設為10 MPa以上,更佳為設為30 MPa以上。The pressure applied in the plasma sintering step is preferably in the range of more than 0 MPa and less than 100 MPa. In order to obtain a high-density first material, the pressure applied in the plasma sintering step is preferably set to be greater than 10 MPa, and more preferably set to be greater than 30 MPa.
電漿燒結步驟之加熱溫度較佳為充分低於作為目標物之第一材料之熔點。The heating temperature in the plasma sintering step is preferably sufficiently lower than the melting point of the first material as the target.
進而,藉由對所得固體組合物進行熱處理,可調整細孔之大小及分佈等。 [實施例]Furthermore, by heat treating the obtained solid composition, the size and distribution of the pores can be adjusted. [Example]
以下,參考實施例更詳細地說明本發明。Hereinafter, the present invention will be described in more detail with reference to embodiments.
<鈦氧化物之晶體結構解析> 作為晶體結構之解析,使用粉末X射線繞射測定裝置SmartLab(Rigaku公司製造),於下述條件下改變溫度,對粉體進行粉末X射線繞射測定,獲得粉末X射線繞射圖形。基於所得圖形,使用PDXL2(Rigaku公司製造)軟件,利用最小平方法進行晶格常數之精密化,於25℃~400℃之範圍內求出a軸之晶格常數及c軸之晶格常數,從而算出A(T)。 測定裝置:粉末X射線繞射測定裝置SmartLab(Rigaku製造) X射線產生器:CuKα放射源、電壓45 kV、電流200 mA 狹縫:狹縫寬度2 mm 掃描步驟:0.02 deg 掃描範圍:5-80 deg 掃描速度:10 deg/min X射線檢測器:一維半導體檢測器 試樣準備:藉由研缽粉碎進行粉末化 測定氣體氛圍:Ar 100 mL/min 試樣台:由專用玻璃基板SiO2 製造 實施例1~5及比較例1~3之鈦氧化物之鋼玉結構之空間群均具有歸屬於R-3c之Ti2 O3 的繞射峰。<Analysis of the crystal structure of titanium oxide> For the analysis of the crystal structure, the powder X-ray diffraction measurement device SmartLab (manufactured by Rigaku) was used to change the temperature under the following conditions to measure the powder X-ray diffraction and obtain the powder X-ray diffraction pattern. Based on the obtained pattern, the lattice constant was refined using the least square method using the PDXL2 (manufactured by Rigaku) software, and the lattice constant of the a-axis and the lattice constant of the c-axis were obtained in the range of 25℃ to 400℃, thereby calculating A(T). Measuring device: Powder X-ray diffraction measuring device SmartLab (manufactured by Rigaku) X-ray generator: CuKα radiation source, voltage 45 kV, current 200 mA Slit: Slit width 2 mm Scanning step: 0.02 deg Scanning range: 5-80 deg Scanning speed: 10 deg/min X-ray detector: One-dimensional semiconductor detector Sample preparation: Powdered by mortar grinding Measurement gas atmosphere: Ar 100 mL/min Sample stage: Made of dedicated glass substrate SiO2 The space group of the corundum structure of the titanium oxide in Examples 1 to 5 and Comparative Examples 1 to 3 all have a diffraction peak of Ti 2 O 3 belonging to R-3c.
<熱膨脹控制特性之評估> 藉由以下方法來評估熱膨脹控制特性。 使用以下裝置測定所得鈦氧化物之燒結體(成形體)試樣之熱線膨脹係數。 測定裝置:Thermo plus EVO2 TMA系列 Thermo plus 8310 溫度區域:25℃-320℃ 參考固體:氧化鋁 燒結體試樣之典型大小為15 mm×4 mm×4 mm。 針對15 mm×4 mm×4 mm之燒結體,以最長邊作為試樣長度L,測定溫度T時之試樣長度L(T)。藉由下式算出相對於30℃之試樣長度(L(30℃)之尺寸變化率ΔL(T)/L(30℃)。 ΔL(T)/L(30℃)=(L(T)-L(30℃))/L(30℃) 於40℃~300℃之範圍內,以尺寸變化率ΔL(T)/L(30℃)作為T之函數,在從(T-10℃)至(T+10℃)之範圍內藉由最小平方法進行線性近似後,將所得斜率視為溫度T℃時之熱線膨脹係數α(1/℃)。 求出各溫度時之熱線膨脹係數中絕對值最大之負熱線膨脹係數之值及當時之溫度。將具有絕對值最大之負熱線膨脹係數之溫度低於190℃之情形評估為良好。<Evaluation of thermal expansion control characteristics> The thermal expansion control characteristics were evaluated by the following method. The thermal expansion coefficient of the obtained titanium oxide sintered body (molded body) sample was measured using the following device. Measurement device: Thermo plus EVO2 TMA series Thermo plus 8310 Temperature range: 25℃-320℃ Reference solid: Alumina The typical size of the sintered body sample is 15 mm×4 mm×4 mm. For the sintered body of 15 mm×4 mm×4 mm, the longest side is taken as the sample length L, and the sample length L(T) at temperature T is measured. The dimensional change rate ΔL(T)/L(30℃) relative to the sample length (L(30℃) at 30℃ is calculated by the following formula. ΔL(T)/L(30℃)=(L(T)-L(30℃))/L(30℃) Within the range of 40℃~300℃, the dimensional change rate ΔL(T)/L(30℃) is used as a function of T. In the range of (T-10℃ ) to (T + 10 ° C) by the least square method, and the obtained slope is regarded as the thermal expansion coefficient α (1/ ° C) at temperature T ° C. The value of the negative thermal expansion coefficient with the largest absolute value among the thermal expansion coefficients at each temperature and the temperature at that time are calculated. The case where the temperature with the largest absolute value of the negative thermal expansion coefficient is lower than 190 ° C is evaluated as good.
<氧缺陷量δ之評估> 針對實施例1~5及比較例1與2之鈦氧化物,藉由各鈦氧化物之熱重量分析來評估氧缺陷量δ。根據熱重量分析,假定鈦氧化物之氧化反應會進行,依據下述式(1)算出氧缺陷量δ。氧化反應後之鈦氧化物稱為最終氧化物。 測定裝置:熱重量分析裝置TGDTA6300AST-2(精工電子奈米科技公司製造) 加熱程式:以10℃/分鐘從30℃升溫至100℃,於100℃保持5分鐘。其後,以10℃/分鐘從100℃升溫至1300℃,於1300℃保持10分鐘。 測定氣體氛圍:乾燥空氣200 mL/分鐘 [數1] δ:氧缺陷量 WF :於100℃~1300℃時之鈦氧化物之重量之最大值 WI :於100℃下保持5分鐘後即刻之鈦氧化物之重量 MF :最終氧化物之分子量 MO :O之原子量16.00 g/mol MI :鈦氧化物中之金屬及/或半金屬元素平均原子量<Evaluation of oxygen deficiency amount δ> For the titanium oxides of Examples 1 to 5 and Comparative Examples 1 and 2, the oxygen deficiency amount δ was evaluated by thermogravimetric analysis of each titanium oxide. According to the thermogravimetric analysis, assuming that the oxidation reaction of the titanium oxide will proceed, the oxygen deficiency amount δ is calculated according to the following formula (1). The titanium oxide after the oxidation reaction is called the final oxide. Measuring apparatus: Thermogravimetric analyzer TGDTA6300AST-2 (manufactured by Seiko Instruments NanoTech Co., Ltd.) Heating program: Raise the temperature from 30°C to 100°C at 10°C/min, and keep at 100°C for 5 minutes. Thereafter, raise the temperature from 100°C to 1300°C at 10°C/min, and keep at 1300°C for 10 minutes. Measuring gas atmosphere: Dry air 200 mL/min [number 1] δ: oxygen deficiency W F : maximum value of the weight of titanium oxide at 100℃~1300℃ W I : weight of titanium oxide immediately after being kept at 100℃ for 5 minutes M F : molecular weight of the final oxide M O : atomic weight of O 16.00 g/mol M I : average atomic weight of metal and/or semi-metal elements in titanium oxide
式(1)中,關於MF ,以相對於鈦氧化物之各加入組成,Ti與Ti以外之金屬或半金屬元素之組成式之係數總和成為1的方式得到標準化後,基於1300℃時之各所含金屬之氧化狀態而算出MF 。Ti被氧化成TiO2 ,Nb被氧化成Nb2 O5 ,Al被氧化成Al2 O3 ,Cr被氧化成Cr2 O3 ,Si被氧化成SiO2 ,以其等之混合物之形式算出MF 。 實施例1中,以(0.935TiO2 +0.0325Nb2 O5 )作為最終氧化物而算出MF 。 實施例2中,以(0.90TiO2 +0.05Al2 O3 )作為最終氧化物而算出MF 。 實施例3中,以(0.915TiO2 +0.0425Cr2 O3 )作為最終氧化物而算出MF 。 實施例4中,以(0.95TiO2 +0.025Cr2 O3 )作為最終氧化物而算出MF 。 實施例5中,以(0.875TiO2 +0.0625Nb2 O5 )作為最終氧化物而算出MF 。 比較例1中,以TiO2 作為最終氧化物而算出MF 。 比較例2中,以(0.995TiO2 +0.005SiO2 )作為最終氧化物而算出MF 。In formula (1), M F is calculated based on the oxidation state of each metal contained at 1300°C after being normalized so that the sum of the coefficients of the composition formula of Ti and metal or semi-metal elements other than Ti relative to each added composition of titanium oxide becomes 1. Ti is oxidized to TiO 2 , Nb is oxidized to Nb 2 O 5 , Al is oxidized to Al 2 O 3 , Cr is oxidized to Cr 2 O 3 , and Si is oxidized to SiO 2 , and M F is calculated as a mixture thereof. In Example 1, M F is calculated using (0.935TiO 2 + 0.0325Nb 2 O 5 ) as the final oxide. In Example 2, MF was calculated using (0.90TiO 2 +0.05Al 2 O 3 ) as the final oxide. In Example 3, MF was calculated using (0.915TiO 2 +0.0425Cr 2 O 3 ) as the final oxide. In Example 4, MF was calculated using (0.95TiO 2 +0.025Cr 2 O 3 ) as the final oxide. In Example 5, MF was calculated using (0.875TiO 2 +0.0625Nb 2 O 5 ) as the final oxide. In Comparative Example 1, MF was calculated using TiO 2 as the final oxide. In Comparative Example 2, M F was calculated using (0.995TiO 2 +0.005SiO 2 ) as the final oxide.
實施例1中,以(0.935Ti+0.065Nb)算出MI 。 實施例2中,算出(0.90Ti+0.10Al)作為MI 。 實施例3中,算出(0.915Ti+0.085Cr)作為MI 。 實施例4中,算出(0.95Ti+0.05Cr)作為MI 。 實施例5中,算出(0.875Ti+0.125Nb)作為MI 。 比較例1中,Ti之原子量為MI 。 比較例2中,算出(0.995Ti+0.005Si)為MI 。In Example 1, MI is calculated as (0.935Ti+0.065Nb). In Example 2, MI is calculated as (0.90Ti+0.10Al). In Example 3, MI is calculated as (0.915Ti+0.085Cr). In Example 4, MI is calculated as (0.95Ti+0.05Cr). In Example 5, MI is calculated as (0.875Ti+0.125Nb). In Comparative Example 1, the atomic weight of Ti is MI . In Comparative Example 2, MI is calculated as (0.995Ti+0.005Si).
<實施例1> 稱量5.53 g之Ti2 O3 粉(高純度化學公司製造,150 μmPass,純度99.9%)及0.47 g之Nb2 O3 粉(高純度化學公司製造;顆粒,2-5 mm;純度99.9%),於研缽中進行粉碎,而獲得第一混合粉末。將所得第一混合粉末裝入專用碳製模具中,於下述條件下進行放電電漿燒結,藉此獲得第一燒結體。<Example 1> 5.53 g of Ti 2 O 3 powder (manufactured by High Purity Chemical Co., Ltd., 150 μm pass, purity 99.9%) and 0.47 g of Nb 2 O 3 powder (manufactured by High Purity Chemical Co., Ltd.; particles, 2-5 mm; purity 99.9%) were weighed and pulverized in a mortar to obtain a first mixed powder. The obtained first mixed powder was placed in a special carbon mold and discharged plasma sintered under the following conditions to obtain a first sintered body.
裝置:Doctor Sinter Lab SPS-511S(富士電波工機公司製造) 試樣:混合粉末6.0 g 模具:裝置專用之碳製模具、內徑20 mmϕ 氣體氛圍:氬氣0.05 MPa 壓力:40 MPa(12.8 kN) 加熱:1500℃、10分鐘Device: Doctor Sinter Lab SPS-511S (manufactured by Fuji Denpa Koki Co., Ltd.) Sample: 6.0 g of mixed powder Mold: Carbon mold for the device, inner diameter 20 mmφ Gas atmosphere: Argon 0.05 MPa Pressure: 40 MPa (12.8 kN) Heating: 1500°C, 10 minutes
藉由將所得第一燒結體於研缽中進行粉碎,而獲得第一鈦氧化物粉。稱量5.56 g第一鈦氧化物粉,並稱量0.10 g之Ti粉(高純度化學社製造,300 μmPass,純度99.95%)及0.17 g之Nb2 O3 粉(高純度化學社製造;顆粒,2-5 mm;純度99.9%)置於上述5.56 g第一鈦氧化物粉中,於研缽中進行粉碎,藉此獲得第二混合粉末。將所得第二混合粉末裝入專用碳製模具中,於下述條件下進行放電電漿燒結,藉此獲得實施例1之燒結體。對所得實施例1之燒結體進行晶體結構解析,其結果,A(25℃)為0.3773,A(100℃)為0.3756。再者,根據加入量,實施例1之燒結體之加入組成為Ti1.87 Nb0.13 O2.92 。The first sintered body obtained was pulverized in a mortar to obtain a first titanium oxide powder. 5.56 g of the first titanium oxide powder was weighed, and 0.10 g of Ti powder (manufactured by Kojun Chemical Co., Ltd., 300 μm Pass, purity 99.95%) and 0.17 g of Nb 2 O 3 powder (manufactured by Kojun Chemical Co., Ltd.; particles, 2-5 mm; purity 99.9%) were weighed and placed in the above 5.56 g of the first titanium oxide powder, and pulverized in a mortar to obtain a second mixed powder. The obtained second mixed powder was placed in a special carbon mold and discharged plasma sintered under the following conditions to obtain the sintered body of Example 1. The crystal structure of the sintered body of Example 1 was analyzed. As a result, A (25°C) was 0.3773 and A (100°C) was 0.3756. Furthermore, according to the addition amount, the addition composition of the sintered body of Example 1 was Ti 1.87 Nb 0.13 O 2.92 .
裝置:Doctor Sinter Lab SPS-511S(富士電波工機公司製造) 試樣:混合粉末6.0 g 模具:裝置專用之碳製模具、內徑20 mmϕ 氣體氛圍:氬氣0.05 MPa 壓力:40 MPa(12.8 kN) 加熱:1350℃、10分鐘Device: Doctor Sinter Lab SPS-511S (manufactured by Fuji Denpa Koki Co., Ltd.) Sample: 6.0 g of mixed powder Mold: Carbon mold for the device, inner diameter 20 mmφ Gas atmosphere: Argon 0.05 MPa Pressure: 40 MPa (12.8 kN) Heating: 1350°C, 10 minutes
<實施例2> 稱量3.71 g之Ti2 O3 粉(高純度化學公司製造,150 μmPass,純度99.9%)及0.29 g之Al2 O3 粉(高純度化學公司製造,平均粒徑約1 μm,純度99.9%),於研缽中進行粉碎,獲得混合粉末。將所得混合粉末裝入專用碳製模具中,於下述條件下進行放電電漿燒結,藉此獲得實施例2之燒結體。對所得實施例2之燒結體進行晶體結構解析,其結果,A(25℃)為0.3772。再者,根據加入量,實施例2之燒結體之加入組成為Ti1.80 Al0.20 O3 。<Example 2> 3.71 g of Ti 2 O 3 powder (manufactured by High Purity Chemicals, 150 μm Pass, purity 99.9%) and 0.29 g of Al 2 O 3 powder (manufactured by High Purity Chemicals, average particle size about 1 μm, purity 99.9%) were weighed and pulverized in a mortar to obtain a mixed powder. The obtained mixed powder was placed in a special carbon mold and subjected to discharge plasma sintering under the following conditions to obtain a sintered body of Example 2. The crystal structure of the obtained sintered body of Example 2 was analyzed, and the result was that A (25°C) was 0.3772. In addition, according to the addition amount, the addition composition of the sintered body of Example 2 was Ti 1.80 Al 0.20 O 3 .
裝置:Doctor Sinter Lab SPS-511S(富士電波工機公司製造) 試樣:混合粉末4.0 g 模具:裝置專用之碳製模具、內徑20 mmϕ 氣體氛圍:氬氣0.05 MPa 壓力:40 MPa(12.8 kN) 加熱:1500℃、10分鐘Device: Doctor Sinter Lab SPS-511S (manufactured by Fuji Denpa Koki Co., Ltd.) Sample: 4.0 g of mixed powder Mold: Carbon mold for the device, inner diameter 20 mmφ Gas atmosphere: Argon 0.05 MPa Pressure: 40 MPa (12.8 kN) Heating: 1500°C, 10 minutes
<實施例3> 稱量5.46 g之Ti2 O3 粉(高純度化學公司製造,150 μmPass,純度99.9%)及0.54 g之Cr2 O3 粉(高純度化學公司製造,平均粒徑3 μm,純度99.9%),於研缽中進行粉碎,獲得混合粉末。將所得混合粉末裝入專用碳製模具中,將實施例2之條件中之混合粉末量變更為6.0 g,於此條件下進行放電電漿燒結,藉此獲得實施例3之燒結體。對所得實施例3之燒結體進行晶體結構解析,其結果,A(25℃)為0.3769,A(100℃)為0.3761。再者,根據加入量,實施例3之燒結體之加入組成為Ti1.83 Cr0.17 O3 。<Example 3> 5.46 g of Ti 2 O 3 powder (manufactured by High Purity Chemicals, 150 μm Pass, purity 99.9%) and 0.54 g of Cr 2 O 3 powder (manufactured by High Purity Chemicals, average particle size 3 μm, purity 99.9%) were weighed and pulverized in a mortar to obtain a mixed powder. The obtained mixed powder was placed in a special carbon mold, and the amount of mixed powder in the conditions of Example 2 was changed to 6.0 g. Discharge plasma sintering was performed under these conditions to obtain a sintered body of Example 3. The crystal structure of the sintered body of Example 3 was analyzed, and the results showed that A (25°C) was 0.3769 and A (100°C) was 0.3761. Furthermore, according to the addition amount, the addition composition of the sintered body of Example 3 is Ti 1.83 Cr 0.17 O 3 .
<實施例4> 稱量3.79 g之Ti2 O3 粉(高純度化學公司製造,150 μmPass,純度99.9%)及0.21 g之Cr2 O3 粉(高純度化學公司製造,平均粒徑約3 μm,純度99.9%),於研缽中進行粉碎,獲得混合粉末。將所得混合粉末裝入專用碳製模具中,將實施例2之條件中之加熱溫度變更為1300℃,於此條件下進行放電電漿燒結,藉此獲得實施例4之燒結體。對所得實施例4之燒結體進行晶體結構解析,其結果,A(25℃)為0.3772。再者,根據加入量,實施例4之燒結體之加入組成為Ti1.90 Cr0.10 O3 。 <實施例5> 稱量4.75 g之Ti2 O3 粉(高純度化學公司製造,150 μmPass,純度99.9%)、0.10 g之Ti粉(高純度化學公司製造,300 μmPass,純度99.95%)、及1.14 g之Nb2 O3 粉(高純度化學公司製造;顆粒,2-5 mm;純度99.9%),於研缽中進行粉碎,獲得混合粉末。將所得混合粉末裝入專用碳製模具中,將實施例2之條件中之加熱溫度變更為1350℃,於此條件下進行放電電漿燒結,藉此獲得實施例5之燒結體。對所得實施例5之燒結體進行晶體結構解析,其結果,A(25℃)為0.3758,A(100℃)為0.3752。再者,根據加入量,實施例5之燒結體之加入組成為Ti1.75 Nb0.25 O2.92 。<Example 4> 3.79 g of Ti 2 O 3 powder (manufactured by High Purity Chemicals, 150 μm Pass, purity 99.9%) and 0.21 g of Cr 2 O 3 powder (manufactured by High Purity Chemicals, average particle size about 3 μm, purity 99.9%) were weighed and pulverized in a mortar to obtain a mixed powder. The obtained mixed powder was placed in a special carbon mold, and the heating temperature in the conditions of Example 2 was changed to 1300°C. Discharge plasma sintering was performed under this condition to obtain a sintered body of Example 4. The crystal structure of the sintered body of Example 4 was analyzed, and the result was that A (25°C) was 0.3772. Furthermore, according to the addition amount, the addition composition of the sintered body of Example 4 is Ti 1.90 Cr 0.10 O 3 . <Example 5> 4.75 g of Ti 2 O 3 powder (manufactured by High Purity Chemicals, 150 μm Pass, purity 99.9%), 0.10 g of Ti powder (manufactured by High Purity Chemicals, 300 μm Pass, purity 99.95%), and 1.14 g of Nb 2 O 3 powder (manufactured by High Purity Chemicals; particles, 2-5 mm; purity 99.9%) were weighed and pulverized in a mortar to obtain a mixed powder. The obtained mixed powder was placed in a special carbon mold, and the heating temperature in the conditions of Example 2 was changed to 1350°C. Discharge plasma sintering was performed under this condition to obtain a sintered body of Example 5. The crystal structure of the sintered body of Example 5 was analyzed, and the results showed that A (25°C) was 0.3758 and A (100°C) was 0.3752. Furthermore, according to the addition amount, the addition composition of the sintered body of Example 5 was Ti 1.75 Nb 0.25 O 2.92 .
<比較例1> 將6.60 g之Ti2 O3 粉(高純度化學公司製造,150 μmPass,純度99.9%)於研缽中進行粉碎,獲得粉末。將所得粉末裝入專用碳製模具中,將實施例2之條件中之粉末量變更為6.60 g,將加熱溫度變更為1350℃,於此條件下進行放電電漿燒結,藉此獲得比較例1之燒結體。對所得比較例1之燒結體進行晶體結構解析,其結果,A(25℃)為0.3779,A(100℃)為0.3770。再者,根據加入量而言,比較例1之燒結體之加入組成為Ti2 O3 。<Comparative Example 1> 6.60 g of Ti 2 O 3 powder (manufactured by High Purity Chemical Co., Ltd., 150 μm Pass, purity 99.9%) was crushed in a mortar to obtain a powder. The obtained powder was placed in a special carbon mold, the amount of powder in the conditions of Example 2 was changed to 6.60 g, the heating temperature was changed to 1350°C, and discharge plasma sintering was performed under these conditions to obtain a sintered body of Comparative Example 1. The crystal structure of the sintered body of Comparative Example 1 obtained was analyzed, and the results showed that A (25°C) was 0.3779 and A (100°C) was 0.3770. In addition, in terms of the added amount, the added composition of the sintered body of Comparative Example 1 is Ti 2 O 3 .
<比較例2> 稱量1.00 g之Ti粉(高純度化學公司製造,300 μmPass,純度99.95%)、6.00 g之TiO2 粉(高純度化學公司製造,平均粒徑約2 μm,純度99.99%)、及0.03 g之SiO2 粉(高純度化學公司製造,平均粒徑0.8 μm,純度99.9%),於研缽中進行粉碎,獲得混合粉末。將所得混合粉末裝入專用碳製模具中,將實施例2之條件中之混合粉末量變更為6.0 g,將加熱溫度變更為1100℃,將燒結時間變更為45分鐘,於此條件下進行放電電漿燒結,藉此獲得比較例2之燒結體。對所得比較例2之燒結體進行晶體結構解析,其結果,A(25℃)為0.3786。再者,根據加入量,比較例2之燒結體之加入組成為Ti1.99 Si0.01 O3.14 。<Comparative Example 2> 1.00 g of Ti powder (manufactured by High Purity Chemicals, 300 μm Pass, purity 99.95%), 6.00 g of TiO2 powder (manufactured by High Purity Chemicals, average particle size of about 2 μm, purity 99.99%), and 0.03 g of SiO2 powder (manufactured by High Purity Chemicals, average particle size of 0.8 μm, purity 99.9%) were weighed and pulverized in a mortar to obtain a mixed powder. The obtained mixed powder was placed in a special carbon mold, the amount of the mixed powder in the conditions of Example 2 was changed to 6.0 g, the heating temperature was changed to 1100°C, and the sintering time was changed to 45 minutes. Discharge plasma sintering was performed under these conditions to obtain a sintered body of Comparative Example 2. The crystal structure of the sintered body of Comparative Example 2 was analyzed, and the result showed that A (25°C) was 0.3786. Furthermore, according to the addition amount, the addition composition of the sintered body of Comparative Example 2 was Ti 1.99 Si 0.01 O 3.14 .
<比較例3> 稱量1.96 g之Ti2 O3 粉(高純度化學公司製造,45 μmPass,純度99%)、2.23 g之Cr2 O3 粉(平均粒徑約3 μm,純度99.9%)、及1.96 g之ZrO2 粉(高純度化學公司製造,粒徑20-40 μm,純度98%),於研缽中進行粉碎,獲得混合粉末。將所得混合粉末裝入專用碳製模具中,將實施例2之條件中之混合粉末量變更為6.0 g,將加熱溫度變更為1200℃,將燒結時間變更為1小時,於此條件下進行放電電漿燒結,藉此獲得比較例3之燒結體。對所得比較例2之燒結體進行晶體結構解析,其結果,A(25℃)為0.3711。再者,根據加入量,比較例3之燒結體之加入組成為Ti0.72 Cr0.77 Zr0.38 O3 。<Comparative Example 3> Weigh 1.96 g of Ti 2 O 3 powder (produced by High Purity Chemical Company, 45 μm Pass, purity 99%), 2.23 g of Cr 2 O 3 powder (average particle size of about 3 μm, purity 99.9%), and 1.96 g of ZrO 2 powder (produced by High Purity Chemical Company, particle size 20-40 μm, purity 98%), and grind them in a mortar to obtain a mixed powder. The obtained mixed powder was placed in a special carbon mold, and the amount of the mixed powder in the conditions of Example 2 was changed to 6.0 g, the heating temperature was changed to 1200°C, and the sintering time was changed to 1 hour. Discharge plasma sintering was performed under these conditions to obtain a sintered body of Comparative Example 3. The crystal structure of the sintered body of Comparative Example 2 was analyzed, and the result showed that A (25°C) was 0.3711. In addition, according to the addition amount, the addition composition of the sintered body of Comparative Example 3 was Ti 0.72 Cr 0.77 Zr 0.38 O 3 .
將所得實施例、比較例之結果示於表1。
[表1]
圖1表示實施例1、2、5及比較例1、2、3之尺寸變化率ΔL(T)/L(30℃)之溫度依存性。FIG. 1 shows the temperature dependence of the dimensional change rate ΔL(T)/L(30° C.) of Examples 1, 2, 5 and Comparative Examples 1, 2, 3.
圖2表示實施例1~5及比較例1、2、3之熱線膨脹係數α(T)(1/℃),即,尺寸變化率ΔL(T)/L(30℃)之溫度微分。FIG. 2 shows the thermal expansion coefficient α(T)(1/°C) of Examples 1 to 5 and Comparative Examples 1, 2, and 3, that is, the temperature differential of the dimensional change rate ΔL(T)/L(30°C).
圖3表示實施例1、5及比較例1之溫度與A(T)之關係。FIG3 shows the relationship between temperature and A(T) in Examples 1, 5 and Comparative Example 1.
已確認實施例之鈦氧化物於低於190℃之溫度時顯示絕對值最大之負熱線膨脹係數。It has been confirmed that the titanium oxide of the embodiment shows an absolute maximum negative thermal expansion coefficient at a temperature lower than 190°C.
圖1係表示實施例1、2、5及比較例1、2、3之尺寸變化率ΔL(T)/L(30℃)之溫度依存性的曲線圖。 圖2係表示實施例1~5及比較例1、2、3之熱線膨脹係數α(T)(1/℃),即尺寸變化率ΔL(T)/L(30℃)之溫度微分的曲線圖。 圖3係表示實施例1、5及比較例1之溫度與A(T)之關係的曲線圖。FIG1 is a graph showing the temperature dependence of the dimensional change rate ΔL(T)/L(30°C) of Examples 1, 2, 5 and Comparative Examples 1, 2, 3. FIG2 is a graph showing the temperature differential of the thermal expansion coefficient α(T) (1/°C) of Examples 1 to 5 and Comparative Examples 1, 2, 3, i.e., the dimensional change rate ΔL(T)/L(30°C). FIG3 is a graph showing the relationship between temperature and A(T) of Examples 1, 5 and Comparative Example 1.
Claims (8)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020063973A JP7609563B2 (en) | 2020-03-31 | 2020-03-31 | Titanium oxide, powder, powder composition, solid composition, liquid composition, and molded body |
| JP2020-063973 | 2020-03-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202142492A TW202142492A (en) | 2021-11-16 |
| TWI868340B true TWI868340B (en) | 2025-01-01 |
Family
ID=77928358
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW110111265A TWI868340B (en) | 2020-03-31 | 2021-03-29 | Titanium oxide, powder, powder composition, solid composition, liquid composition, and molded body |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP7609563B2 (en) |
| TW (1) | TWI868340B (en) |
| WO (1) | WO2021200507A1 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010120817A (en) * | 2008-11-20 | 2010-06-03 | National Institute Of Advanced Industrial Science & Technology | Method of preparing composite titanium oxide |
| JP2015187936A (en) * | 2014-03-26 | 2015-10-29 | 本田技研工業株式会社 | Active material for lithium secondary battery, method for producing the same, and lithium secondary battery using the same |
| JP2016030698A (en) * | 2014-07-25 | 2016-03-07 | 本田技研工業株式会社 | Titanium oxide and manufacturing method thereof, active material for secondary battery and manufacturing method thereof, and secondary battery using titanium oxide as active material |
| US20190161359A1 (en) * | 2016-03-22 | 2019-05-30 | The University Of Tokyo | Metal-substituted titanium oxide, and method for producing metal-substituted titanium oxide sintered body |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5375838B2 (en) | 2011-01-05 | 2013-12-25 | 株式会社村田製作所 | Method for producing perovskite complex oxide powder |
| JP2012214348A (en) | 2011-04-01 | 2012-11-08 | National Institute For Materials Science | Method for synthesizing reduction type titanium oxide |
| JP6190023B1 (en) | 2015-10-07 | 2017-08-30 | 日本化学工業株式会社 | Method for producing zirconium tungstate phosphate |
| JP7397590B2 (en) * | 2019-07-12 | 2023-12-13 | 住友化学株式会社 | Powder compacts and filler powders |
-
2020
- 2020-03-31 JP JP2020063973A patent/JP7609563B2/en active Active
-
2021
- 2021-03-24 WO PCT/JP2021/012388 patent/WO2021200507A1/en not_active Ceased
- 2021-03-29 TW TW110111265A patent/TWI868340B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010120817A (en) * | 2008-11-20 | 2010-06-03 | National Institute Of Advanced Industrial Science & Technology | Method of preparing composite titanium oxide |
| JP2015187936A (en) * | 2014-03-26 | 2015-10-29 | 本田技研工業株式会社 | Active material for lithium secondary battery, method for producing the same, and lithium secondary battery using the same |
| JP2016030698A (en) * | 2014-07-25 | 2016-03-07 | 本田技研工業株式会社 | Titanium oxide and manufacturing method thereof, active material for secondary battery and manufacturing method thereof, and secondary battery using titanium oxide as active material |
| US20190161359A1 (en) * | 2016-03-22 | 2019-05-30 | The University Of Tokyo | Metal-substituted titanium oxide, and method for producing metal-substituted titanium oxide sintered body |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202142492A (en) | 2021-11-16 |
| JP7609563B2 (en) | 2025-01-07 |
| WO2021200507A1 (en) | 2021-10-07 |
| JP2021160976A (en) | 2021-10-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI849176B (en) | Powder molding and filler powder | |
| EP2418240B1 (en) | Anti-thermally-expansive resin and anti-thermally-expansive metal | |
| JP4999091B2 (en) | Method for producing zirconium tungstate-silicon oxide composite sintered body | |
| TWI865558B (en) | Solid composition | |
| TWI868340B (en) | Titanium oxide, powder, powder composition, solid composition, liquid composition, and molded body | |
| TWI878506B (en) | Particles, powder compositions, solid compositions, liquid compositions and shaped bodies | |
| CN114127014B (en) | Powder and solid composition | |
| JP7529423B2 (en) | Titanium compound, powder and method for producing titanium compound | |
| CN117460700A (en) | Particle group, composition, molded article, and method for producing particle group | |
| TWI872237B (en) | Particle group, powder composition, solid composition, liquid composition, and molded body | |
| JP2025112957A (en) | Boron nitride agglomerated powder, resin composition, heat dissipation sheet and semiconductor device | |
| JP2025174389A (en) | Nitride powder, composition for three-dimensional modeling, shaped object, sintered body, method for manufacturing shaped object, and method for manufacturing sintered body |