TWI849552B - Vaporrizer system - Google Patents

Abstract

A system includes a vaporizer vessel. The vaporizer vessel includes an outlet fluidly connected to the vaporizer vessel. A heater is configured to heat the vaporizer vessel. A valve is configured to regulate a pressure of a vaporized material at the outlet. In response to the pressure at the outlet being outside a set pressure range, the heater is configured to increase or decrease heat to the vaporizer vessel.

Description

Vaporizer system

The present invention generally relates to a vaporizer. More particularly, the present invention relates to a vaporizer for vaporizing source reagent material.

Vaporizers for source reagents typically utilize conduction heating from the surface of a metal container to the solid precursor. In order to distribute heat through the solid precursor, an internal metal structure may be used to provide a metal heat path for heating.

In some embodiments, a system includes a vaporizer vessel. In some embodiments, the vaporizer vessel includes an outlet fluidly connected to the vaporizer vessel. In some embodiments, a heater is configured to heat the vaporizer vessel. In some embodiments, one or more valves are configured to adjust a pressure of a vaporized material at the outlet. In some embodiments, in response to the pressure at the outlet being outside a set pressure range, the heater is configured to add or remove heat to the vaporizer vessel.

In some embodiments, the system includes at least one of a temperature sensor or a pressure sensor in electronic communication with the valve.

In some embodiments, in response to a pressure of the gasified material being lower than the set pressure range, the valve is configured to increase the pressure of the gasified material. In some embodiments, in response to the pressure of the gasified material being higher than the set pressure range, the valve is configured to decrease the pressure of the gasified material.

In some embodiments, in response to the pressure of the vaporized material being lower than the set pressure range, the heater is configured to increase the heat of the vaporizer container. In some embodiments, in response to the pressure of the vaporized material being higher than the set pressure range, the heater is configured to reduce the heat of the vaporizer container.

In some embodiments, the heater is disabled in response to the pressure of the gasified material being higher than the set pressure range.

In some embodiments, the vaporizer vessel is heated to a temperature that creates a higher pressure inside the vessel at the outlet. In such embodiments, the vaporizer vessel may be at a temperature above the melting point so that thermal contact between the material and the vaporizer vessel is increased. In such embodiments, a valve may reduce the pressure to effectively vapor transport the material.

In some embodiments, the system includes a second valve disposed in an internal volume of the vaporizer vessel. In some embodiments, in response to the pressure of the vaporized material being lower than the set pressure range, the second valve is configured to increase the pressure of the vaporized material. In some embodiments, in response to the pressure of the vaporized material being higher than the set pressure range, the second valve is configured to decrease the pressure of the vaporized material.

In some embodiments, the valve may also be placed in the plenum cabinet and connected remotely or directly to the vaporizer vessel.

In some embodiments, a system includes a vaporizer container. In some embodiments, an outlet fluid is connected to the vaporizer container. In some embodiments, a valve is configured to adjust a pressure of a vaporized material leaving the vaporizer container so that the vaporized material is supplied to the outlet within a set pressure range.

In some embodiments, the system includes at least one of a temperature sensor or a pressure sensor in electronic communication with the valve.

In some embodiments, in response to a pressure of the gasified material being lower than the set pressure range, the valve is configured to increase the pressure of the gasified material. In some embodiments, in response to the pressure of the gasified material being higher than the set pressure range, the valve is configured to decrease the pressure of the gasified material.

In some embodiments, the system includes a heater. In some embodiments, in response to the pressure of the vaporized material being lower than the set pressure range, the heater is configured to add heat to the vaporizer vessel. In some embodiments, in response to the pressure of the vaporized material being higher than the set pressure range, the heater is configured to reduce the heat to the vaporizer vessel.

In some embodiments, the system includes a heater. In some embodiments, in response to the pressure being below the set pressure range, the heater is configured to maintain a temperature of the vaporized material. In some embodiments, in response to the pressure being above the set pressure range, the heater is configured to maintain a temperature of the vaporized material.

In some embodiments, the system includes a second valve disposed in an internal volume of the vaporizer vessel. In some embodiments, in response to the pressure of the vaporized material being lower than the set pressure range, the second valve is configured to increase the pressure of the vaporized material. In some embodiments, in response to the pressure of the vaporized material being higher than the set pressure range, the second valve is configured to decrease the pressure of the vaporized material.

In some embodiments, a system includes a vaporizer container. In some embodiments, an outlet fluid is connected to the vaporizer container. In some embodiments, a heater is configured to heat the vaporizer container. In some embodiments, a first valve is configured to adjust a pressure of a vaporized material leaving the vaporizer container so that the vaporized material is supplied to the outlet within a first set pressure range. In some embodiments, a second valve is configured to adjust the pressure of the vaporized material at the outlet so that the vaporized material leaves the system within a second set pressure range.

In some embodiments, the system includes at least one of a temperature sensor or a pressure sensor in electronic communication with the second valve.

In some embodiments, in response to the pressure of the gasified material being lower than the first set pressure range, the first valve is configured to increase the pressure of the gasified material. In some embodiments, in response to the pressure of the gasified material being higher than the first set pressure range, the first valve is configured to decrease the pressure of the gasified material.

In some embodiments, in response to the pressure of the vaporized material being lower than the first set pressure range or the second set pressure range, the heater is configured to increase a temperature of the vaporized material. In some embodiments, in response to the pressure being higher than the first set pressure range or the second set pressure range, the heater is configured to decrease the temperature of the vaporized material.

In some embodiments, in response to the pressure of the vaporized material being lower than the first set pressure range or the second set pressure range, the heater is configured to maintain a temperature of the vaporized material. In some embodiments, in response to the pressure of the vaporized material being higher than the first set pressure range or the second set pressure range, the heater is configured to maintain the temperature of the vaporized material.

In some embodiments, in response to the pressure of the gasified material being lower than the second set pressure range, the second valve is configured to increase the pressure of the gasified material. In some embodiments, in response to the pressure of the gasified material being higher than the second set pressure range, the second valve is configured to decrease the pressure of the gasified material.

In some embodiments, the first valve is a mechanical valve and the second valve is an electronically actuated valve.

In some embodiments, the second set pressure range is a pressure range narrower than the first set pressure range.

50:Carburettor system

52: Carburetor assembly

54: Tools

56: Catheter

58: Valve

60:Sensor

62:Export

64:Carburettor container

66: Internal volume

68: Source reagent

70: Valve

72: Heater

100:Methods

102: Block

104: Block

106: Block

150:Methods

152: Block

154: Block

156: Block

200:Methods

202: Block

204: Block

206: Block

250:Methods

252: Block

254: Block

256: Block

Reference is made to the accompanying drawings which form part of the present invention and which illustrate embodiments in which the systems and methods described in this specification may be practiced.

FIG. 1 is a schematic diagram of a gasifier system according to some embodiments.

FIG. 2 is a flow chart of a method for controlling a gasifier system according to some embodiments.

FIG. 3 is a flow chart of a method for controlling a gasifier system according to some embodiments.

FIG. 4 is a flow chart of a method for controlling a gasifier system according to some embodiments.

FIG. 5 is a flow chart of a method for controlling a gasifier system according to some embodiments.

The same component symbols are used throughout the text to refer to the same or similar parts.

Priority

This invention claims priority to U.S. Provisional Patent No. 63/272,336 filed on October 27, 2021 and U.S. Provisional Patent No. 63/337,782 filed on May 3, 2022. These priority documents are incorporated by reference.

Embodiments of the present invention relate to a vaporizer, system, and method for volatile source reagents to generate vapor for use in fluid-based processes such as chemical vapor deposition (CVD) processes, atomic layer deposition (ALD) processes, plasma enhanced atomic layer deposition (PEALD) processes, metal organic chemical vapor deposition (MOCVD) processes, plasma enhanced chemical vapor deposition (PECVD) processes, and the like.

Embodiments of the present invention may be applied to various types of source reagents, including source reagent materials in solid form, source reagent materials in liquid form, source reagent materials in semi-solid form, source reagent materials in slurry form (including solid materials suspended in a liquid), and solid material solutions dissolved in a solvent. In some embodiments, the source reagent material in solid form may be, for example, in the form of powder, granules, pellets, beads, bricks, blocks, sheets, rods, plates, films, coatings, or the like, and may be porous or non-porous depending on the expectations of a given application.

FIG. 1 is a schematic diagram of a gasifier system 50 according to some embodiments.

The gasifier system 50 generally includes a gasifier assembly 52 and a tool 54 fluidly connected by a conduit 56. A valve 58 and a sensor 60 are fluidly disposed before an outlet 62 of the gasifier assembly 52.

The vaporizer assembly 52 may be used to deliver a vaporized source reagent in, for example, a chemical vapor deposition (CVD) process, an atomic layer deposition (ALD) process, a plasma enhanced atomic layer deposition (PEALD) process, a metal organic chemical vapor deposition (MOCVD) process, and a plasma enhanced chemical vapor deposition (PECVD) process. It should be understood that these applications are examples and that additional uses of the vaporizer assembly 52 may be within the scope of the present invention.

The vaporizer assembly 52 includes a vaporizer container 64. The vaporizer container 64 includes an internal volume 66. The internal volume 66 contains a source reagent 68. In some embodiments, a valve 70 is disposed within the internal volume 66. The heated source reagent 68 can be provided as a vaporized source reagent from the vaporizer container 64 via an outlet.

In some embodiments, the vaporizer vessel 64 is formed of a thermally conductive material. In some embodiments, the thermally conductive material may be, but is not limited to, silver, silver alloys, copper, copper alloys, aluminum, aluminum alloys, lead, nickel-plated, stainless steel, graphite, silicon carbide coated graphite, boron nitride, ceramic materials, any combination thereof, or the like. The vaporizer vessel 64 may have any shape. In some embodiments, the vaporizer vessel 64 may be cylindrical.

It should be understood that the vaporizer vessel 64 may include additional components such as, but not limited to, a carrier gas inlet for providing a gas that supports the vaporized source reagent and an outlet for the vaporized source reagent.

One or more additional structures may be included for containing the source reagent 68 in the internal volume 66. In some embodiments, the internal volume 66 may include a heat absorbing material in contact with the source reagent 68 to provide conductive heat to the source reagent 68.

In some embodiments, the vaporizer assembly 52 may further include: a line for supplying a carrier gas to the vaporizer vessel 64; a line for exhausting source reagent 68 vapor from the vaporizer vessel 64; flow circuit system components, such as flow control valves, mass flow controllers, regulators, flow restriction orifice elements, thermocouples, pressure transducers, monitoring and control devices, heaters for inputting thermal energy to the vaporizer vessel and its contents, heaters for maintaining temperatures in the carrier gas supply line and the source reagent vapor exhaust line, any combination thereof, or the like.

The source reagent 68 may include any suitable type of precursor. Examples of such precursors include, but are not limited to, solid phase metal halides, organometallic solids, any combination thereof, or the like. Examples of the source reagent 68 that can be used include (but are not limited to) dimethylhydrazine, trimethylaluminum (TMA), arsenic chloride (HfCl ₄ ), zirconium chloride (ZrCl ₄ ), indium chloride, aluminum chloride, titanium iodide, tungsten carbonyl, Ba(DPM) ₂ , strontium bis(dineopentanoylmethyl) (Sr(DPM) ₂ ), TiO(DPM) ₂ , zirconium tetrakis(dineopentanoylmethyl) (Zr(DPP) ₄ ), decaborane, boron, magnesium, gallium, indium, antimony, copper, phosphorus, arsenic, lithium, sodium tetrafluoroborate, precursors incorporating alkyl amidino ligands, organometallic precursors, zirconium tert-butyl oxide (Zr(t-OBu) ₄ ), tetrakis(diethylamino)zirconium (Zr(Net ₂ ) ₄ ), tetrakis(diethylamino)arbium (Hf(Net ₂ ) ₄ ), tetrakis(dimethylamino)titanium (TDMAT), tert-butylimidotris(diethylamino)arbium (TBTDET), penta(dimethylamino)arbium (PDMAT), penta(ethylmethylamino)arbium (PEMAT), tetrakis(dimethylamino)zirconium (Zr(NMe ₂ ) ₄ ), tert-butyloxyarbium (Hf(tOBu) ₄ ), xenon difluoride (XeF ₂ ), xenon tetrafluoride (XeF ₄ ), xenon hexafluoride (XeF ₆ ), molybdenum formation (including but not limited to MoO ₂ Cl ₂ , MoO ₂ , MoOCl ₄ , MoCl ₅ , Mo(CO) ₆ ), tungsten formers (including but not limited to WCl ₅ and WCl ₆ , W(CO) ₆ ) and compatible combinations and mixtures of two or more thereof.

Other source reagents may be used. For example, in some embodiments, the source reagent includes at least one of the following: dimethylhydrazine, trimethylaluminum (TMA), arsenic chloride (HfCl ₄ ), zirconium chloride (ZrCl ₄ ), indium chloride, indium chloride, aluminum chloride, titanium iodide, tungsten carbonyl, Ba(DPM) ₂ , bis(dionopentylmethyl)strontium (Sr(DPM) ₂ ), TiO(DPM) ₂ , tetrakis(dionopentylmethyl)zirconium (Zr(DPM) ₄ ), decaborane, octaborane, boron, magnesium, gallium, indium, antimony, copper, phosphorus, arsenic, lithium, sodium tetrafluoroborate, precursors for incorporation of alkyl amidine ligands, organometallic precursors, tert-butyl zirconium oxide (Zr(t-OBu) ₄ ), tetrakisdiethylaminozirconium (Zr(NEt ₂ ) ₄ ), tetrakisdiethylaminoarbium (Hf(NEt ₂ ) ₄ ), tetrakis(dimethylamino)titanium (TDMAT), tert-butyliminotris(diethylamino)arbium (TBTDET), penta(dimethylamino)arbium (PDMAT), penta(ethylmethylamino)arbium (PEMAT), tetrakis(dimethylamino)zirconium (Zr(NMe ₂ ) ₄ ), tert-butyloxyarbium (Hf(tOBu) ₄ ), xenon difluoride (XeF ₂ ), xenon tetrafluoride (XeF ₄ ), xenon hexafluoride (XeF ₆ ), or any combination thereof.

In some embodiments, the source reagent comprises at least one of the following: decaborane, einsteinium tetrachloride, zirconium tetrachloride, indium trichloride, metal organic β-diketone complex, tungsten hexafluoride, cyclopentadienyl (cycloheptatrienyl) titanium (CpTiCht), aluminum trichloride, titanium iodide, cyclooctatetraenyl (cyclopentadienyl) titanium, biscyclopentadienyldiazotitanium, trimethylgallium, trimethylindium, alkylaluminum (such as trimethylaluminum, triethylaluminum), trimethylaminealuminum, dimethylzinc, tetramethyltin, trimethylantimony, diethylcadmium, carbonyl tungsten or any combination thereof.

In some embodiments, the source reagent comprises an elemental metal, a metal halide, a metal halide, an organometallic complex, or any combination thereof. For example, in some embodiments, the source reagent comprises at least one of the following: elemental boron, copper, phosphorus, decaborane, gallium halide, indium halide, antimony halide, arsenic halide, gallium halide, aluminum iodide, titanium iodide, MoO ₂ Cl ₂ , MoOCl ₄ , MoCl ₅ , WCl ₅ , WOCl ₄ , WCl ₆ , cyclopentadienyl (cycloheptatrienyl) titanium (CpTiCht), cyclooctadecene cyclopentadienyl titanium, biscyclopentadienyl titanium dinitride, In(CH ₃ ) ₂ (hfac), dibromomethylstyrene, tungsten carbonyl, metal organic β-diketone complex, metal organic alkoxide complex, metal organic carboxylic acid complex, metal organic aryl complex, metal organic amino complex or any combination thereof.

In some embodiments, the source reagent comprises at least one of decaborane, (B ₁₀ H ₁₄ ), pentaborane (B ₅ H ₉ ), octadecaborane (B ₁₈ H ₂₂ ), boric acid (H ₃ BO ₃ ), SbCl ₃ , SbCl ₅ , or any combination thereof. In some embodiments, the source reagent includes at least one of the following: AsCl ₃ , AsBr ₃ , AsF ₃ , AsF ₅ , AsH ₃ , As ₄ O ₆ , As ₂ Se ₃ , As ₂ S ₂ , As ₂ S ₃ , As ₂ S ₅ , As ₂ Te ₃ , B ₄ H ₁₁ , B ₄ H ₁₀ , B ₃ H ₆ N ₃ , BBr ₃ , BCl ₃ , BF ₃ , BF ₃ .O(C ₂ H ₅ ) ₂ , BF ₃ .HOCH ₃ , B ₂ H ₆ , F ₂ , HF, GeBr ₄ , GeCl ₄ , GeF ₄ , GeH ₄ , H ₂ , HCl, H ₂ Se, H ₂ Te, H ₂ S, WF ₆ , SiH 4 , _4. SiH ₂ Cl ₂ , SiHCl ₃ , SiCl ₄ , SiH ₃ Cl, NH ₃ , NH ₃ , Ar, Br ₂ , HBr, BrF ₅ , CO ₂ , CO, COCl ₂ , COF ₂ , Cl ₂ , ClF ₃ , CF ₄ , C ₂ F ₆ , C ₃ F ₈ , C ₄ F ₈ , C ₅ F ₈ , CHF ₃ , CH ₂ F ₂ , CH ₃ F, CH ₄ , SiH ₆ , He, HCN, Kr, Ne, Ni(CO) ₄ , HNO ₃ , NO, N ₂ , NO ₂ , NF ₃ , N ₂ O, C ₈ H ₂₄ O ₄ Si ₄ , PH ₃ , POCl ₃ , PCl ₅ , PF ₃ , PFS, SbH ₃ , SO ₂ , SF ₆ , SF ₄ , Si(OC ₂ H ₅ ) ₄ , C ₄ H ₁₆ Si ₄ O ₄ , Si(CH ₃ ) ₄ , SiH(CH ₃ ) ₃ , TiCl ₄ , Xe, SiF ₄ , WOF ₄ , TaBr ₅ , TaCl ₅ , TaF ₅ , Sb(C ₂ H ₅ ) ₃ , Sb(CH ₃ ) ₃ , In(CH ₃ ) ₃ , PBr ₅ , PBr ₃ , RuF ₅ , or any combination thereof. It should be understood that other source reagents may be used herein without departing from the present invention.

As an illustrative example of a material selected from the above, lead chloride is used as a source reagent for achieving the deposition of lead and lead-containing films in semiconductor manufacturing operations.

In some embodiments, a heater 72 may be in thermal communication with the gasifier assembly 52. In such embodiments, the heater 72 may heat the gasifier vessel 64 and may do so in any suitable manner. In one embodiment, a ribbon heater is wrapped around the gasifier vessel 64. In another embodiment, a block heater having a shape covering at least a majority of the outer surface of the gasifier vessel 64 is used to heat the gasifier vessel 64. In yet another embodiment, a high temperature heat transfer fluid may be in contact with the outer surface of the gasifier vessel 64 to achieve heating thereof. Another embodiment involves heating by irradiating the gasifier vessel 64 with infrared or other radiation energy.

The method of heating the vaporizer vessel 64 with the heater 72 is not particularly limited, as long as the vaporizer vessel 64 reaches a desired temperature level and maintains this temperature level in an accurate and reliable manner.

The amount of heat supplied by the heater 72 to the vaporizer assembly 52 may depend on the source reagent used (e.g., sublimation point, vaporization point, etc.), the parameters under which the vaporizer system operates (e.g., mass flow rate, volume flow rate, etc.), and the conditions under which the vaporizer system operates (e.g., temperature, pressure, etc.). For example, in some embodiments, the amount of heat supplied by the heater 72 to the vaporizer assembly 52 may be modulated or adjusted according to the specific properties of the source reagent under the conditions and parameters under which the vaporizer system operates.

The vaporizer vessel 64 is in fluid communication with a tool 54. Tool 54 may represent a variety of manufacturing tools, such as (but not limited to) tools used in semiconductor manufacturing processes. Tool 54 may use a vaporization source reagent in a manufacturing process. Generally, tool 54 may include one or more requirements for the pressure at which the vaporization source reagent is received. For example, tool 54 may require that the vaporization source reagent be delivered at a subatmospheric pressure, approximately atmospheric pressure, above atmospheric pressure, or at a superatmospheric pressure.

In some embodiments, the sensor 60 may be a device capable of sensing a characteristic of the source reagent 68. In some embodiments, the characteristic may include a pressure of the source reagent 68, a temperature of the source reagent 68, a mass flow rate of the source reagent 68, any combination thereof, or the like. In some embodiments, the sensor 60 is a temperature sensor configured to measure a temperature of the source reagent 68. In such embodiments, the temperature may be used to determine a pressure of the source reagent 68. In some embodiments, the sensor 60 may be a pressure sensor configured to measure a pressure of the source reagent 68. In some embodiments, the sensor 60 may be used to determine whether the source reagent 68 is within a pressure range required by the tool 54. In some embodiments, in response to determining that the pressure is outside of the pressure range, action may be taken to increase the pressure of the source reagent 68 provided to the tool 54. In some embodiments, the action may include modifying a state of the valve 58, modifying a state of the valve 70, modifying a set point temperature of the heater 72, or any combination thereof.

An additional sensor may be positioned with tool 54. The additional sensor may provide feedback to control valve 58. The additional sensor may be located before outlet 62. The additional sensor may be a temperature sensor, a pressure sensor, a flow sensor, and/or other type of sensor for monitoring the amount of source reagent converted to vapor and provided to tool 54 at outlet 62. The additional sensor may work with sensor 60 to provide control of the system. In some embodiments, the additional sensor is optional.

In some embodiments, valve 58 may include an electronically actuated valve. For example, in some embodiments, valve 58 may be selectively opened/closed to control an output pressure from valve 58 based on a pressure setting. In some embodiments, valve 58 may have a variable orifice that is selectively set to control the output pressure from valve 58 based on a pressure setting. In some embodiments, valve 58 may be a mechanical valve. For example, in some embodiments, valve 58 may be a fixed orifice valve configured to output a selected pressure. In some embodiments, valve 58 may be used to control the pressure of source reagent 68 exiting outlet 62 within a set pressure range. In some embodiments, the set pressure range may be based on a pressure range required by tool 54.

In some embodiments, valve 70 may include an electronically actuated valve. For example, in some embodiments, valve 70 may be selectively opened/closed to control an output pressure from valve 70 based on a pressure setting. In some embodiments, valve 70 may have a variable orifice that is selectively set to control the output pressure from valve 70 based on a pressure setting. In some embodiments, valve 70 may be a mechanical valve. For example, in some embodiments, valve 70 may be a fixed orifice valve configured to output a selected pressure. In such embodiments, valve 70 may be used in conjunction with valve 58 to provide source reagent 68 within the pressure range required by tool 54. In some embodiments, valve 70 may be used to control the pressure of source reagent 68 exiting internal volume 66 within a set pressure range. In some embodiments, the set pressure range exiting internal volume 66 may be greater than the set pressure exiting the outlet (e.g., for valve 58) and may be based on a pressure range required by tool 54.

In some embodiments, valve 58 may be included in the gasifier system 50, while valve 70 is not included in the gasifier system 50. In some embodiments, valve 70 may be included in the gasifier system 50, while valve 58 is not included in the gasifier system 50. In some embodiments, valve 58 and valve 70 may be included in the gasifier system 50.

In some embodiments, valve 58 provides a fine control over the pressure of source reagent 68 and valve 70 provides a broader control over the pressure of source reagent 68. For example, in some embodiments, valve 70 may be set to have a first set pressure range and valve 58 may be set to have a second set pressure range. The second set pressure range may be narrower than the first set pressure range. Thus, valve 70 may be used to control the pressure of source reagent 68 within the first set pressure range, and then valve 58 may be used to control the pressure of source reagent 68 within the second set pressure range. In such embodiments, the second set pressure range is within the first set pressure range. In this manner, in some embodiments, valve 58 and valve 70 can work together to control the pressure of source reagent 68. In some embodiments, the second set pressure range can overlap with the first set pressure range, but cannot be completely covered by the first set pressure range.

In some embodiments, the present invention provides the ability to maintain and stabilize the output pressure range when the source reagent is vaporized by controlling the source reagent with a relatively high heat contact and controlling the starting temperature of the present invention to allow the source reagent to be fully utilized and effectively vaporized. It can achieve 95%, 98%, 99%, 99.5% utilization of the source reagent in the container.

FIG. 2 illustrates a method 100 according to some embodiments. The method 100 may generally be used to control an outlet pressure of a source reagent 68 ( FIG. 1 ) from a gasifier system 50 ( FIG. 1 ).

At block 102, method 100 includes receiving, by a processor, a value indicating a pressure of a source reagent from a sensor. In some embodiments, the sensor may be a pressure sensor. In such embodiments, the value indicating the pressure of the source reagent may be received directly. In some embodiments, the sensor may be a sensor other than a pressure sensor. For example, in some embodiments, the sensor may be a temperature sensor. In such embodiments, a pressure may be calculated by a processor based on temperature.

At block 104, method 100 includes comparing, by a processor, a value indicating the pressure of source reagent 68 with a set pressure range.

At block 106, in response to determining that the pressure value is outside of a set pressure range, method 100 includes modifying a pressure of source reagent 68.

The method 100 may be repeated while the vaporizer system 50 is operating. That is, when the pressure is modified at block 106, the method repeats block 102 and continues to monitor the pressure to ensure that the delivery pressure of the source reagent 68 is within the set pressure range. The methods of FIGS. 3 to 5 may be used to modify the pressure of the source reagent 68 at block 106.

FIG. 3 illustrates a method 150 according to some embodiments. The method 150 may generally be used, for example, at block 106 of FIG. 2 to modify an outlet pressure of a source reagent 68 ( FIG. 1 ) from a gasifier system 50 ( FIG. 1 ).

In block 152, the processor determines whether the value of the pressure of the indicator source reagent 68 is higher than or lower than the set pressure range.

At block 154, in response to determining that the value indicating the pressure of the source reagent 68 is below the set pressure range, the method 150 includes modifying the valve 58 to increase the pressure of the source reagent 68 from the outlet 62. In some embodiments, modifying the valve 58 includes increasing a flow through the valve 58. In some embodiments, this may include, for example, increasing an orifice in the valve 58 through which the source reagent 68 flows. In some embodiments, this may include opening the valve 58 for a longer period of time. In some embodiments, the specific control of the valve 58 depends on the type of valve 58.

At block 156, in response to determining that the value indicating the pressure of source reagent 68 is above the set pressure range, method 150 includes modifying valve 58 to reduce the pressure of source reagent 68 from outlet 62. In some embodiments, modifying valve 58 includes reducing a flow through valve 58. In some embodiments, this may include, for example, reducing an orifice in valve 58 through which source reagent 68 flows. In some embodiments, this may include closing valve 58 for a longer period of time. In some embodiments, the specific control of valve 58 depends on the type of valve 58.

FIG. 4 illustrates a method 200 according to some embodiments. The method 200 may generally be used, for example, to modify an outlet pressure of a source reagent 68 ( FIG. 1 ) from a gasifier system 50 ( FIG. 1 ) at block 106 of FIG. 2 .

In block 202, the processor determines whether the pressure value of the indicator source reagent 68 is higher than or lower than the set pressure range.

At block 204, in response to determining that the value indicating the pressure of the source reagent 68 is below the set pressure range, the method 200 includes modifying the valve 70 to increase the pressure of the source reagent 68 from the outlet 62. In some embodiments, modifying the valve 70 includes increasing a flow through the valve 70. In some embodiments, this may include, for example, increasing an orifice in the valve 70 through which the source reagent 68 flows. In some embodiments, this may include opening the valve 70 for a longer period of time. In some embodiments, the specific control of the valve 70 depends on the type of valve 70.

At block 206, in response to determining that the value indicating the pressure of the source reagent 68 is above the set pressure range, the method 200 includes modifying the valve 70 to reduce a pressure of the source reagent 68 from the outlet 62. In some embodiments, modifying the valve 70 includes reducing a flow through the valve 70. In some embodiments, this may include, for example, reducing an orifice in the valve 70 through which the source reagent 68 flows. In some embodiments, this may include closing the valve 70 for a longer period of time. In some embodiments, the specific control of the valve 70 depends on the type of valve 70.

In some embodiments, method 200 and method 150 (FIG. 3) may be performed together in block 106 (FIG. 2).

FIG. 5 illustrates a method 250 according to some embodiments. The method 250 may generally be used, for example, to modify an outlet pressure of a source reagent 68 ( FIG. 1 ) from a gasifier system 50 ( FIG. 1 ) at block 106 of FIG. 2 .

In block 252, a processor determines whether the value of the pressure of the indicator source reagent 68 is higher than or lower than the set pressure range.

At block 254, in response to determining that the value indicating the pressure of source reagent 68 is below a set pressure range, method 250 includes modifying the setting of heater 72 to increase a pressure of source reagent 68 from outlet 62. In some embodiments, modifying the setting of heater 72 may include increasing a set point temperature of heater 72. In some embodiments, modifying the setting of heater 72 may include extending a period of time that heater 72 is activated or heated.

At block 256, in response to determining that the value indicating the pressure of the source reagent 68 is above the set pressure range, the method 250 includes modifying the setting of the heater 72 to reduce a pressure of the source reagent 68 from the outlet 62. In some embodiments, modifying the setting of the heater 72 may include lowering a set point temperature of the heater 72. In some embodiments, modifying the setting of the heater 72 may include shortening a period of time that the heater 72 is activated or heated.

In some embodiments, method 250, method 150 (FIG. 3), and method 200 (FIG. 4) may be performed together in block 106 (FIG. 2). In some embodiments, method 250 and method 150 or method 200 may be performed together in block 106.

In some embodiments, the vaporizer vessel is heated to a temperature that establishes a higher pressure inside than at the outlet of the vessel. For example, the internal temperature may range from (but not limited to) 150 to 300 degrees Celsius, or may be above the boiling point of the liquid, such that the internal pressure may be in a range above atmospheric pressure. A control valve, which may be located inside, outside, or in a ventilated heating cabinet, may adjust the pressure to a standard 600 torr or a desired lower pressure or even higher, such that the vapor at the outlet is delivered at atmospheric pressure. This embodiment may be used for all source reagents described herein.

A specific example is MoO ₂ Cl ₂ . It can be contained in a container above the melting point of 177°C so that the vapor pressure above the liquid will be above atmospheric pressure. The liquid is maintained in close thermal contact with the ampoule and thus maintains a high vapor pressure. A control valve in the ampoule or cabinet can then maintain the pressure leaving the cabinet within a desired range. For example, the pressure can be maintained below 600 Torr for sub-atmospheric delivery. Alternatively, the pressure can be maintained within a narrow range in order to control the flow through the additional orifice.

A second example of conditions for a _gasifier vessel containing and delivering _MoO2Cl2 is as follows. If the desired delivery pressure is 100 Torr (equilibrium with solids at about 140°C), the vessel can be maintained at a constant 155°C. This will produce a pressure of about 220 Torr in the ampoule when there is no flow. As flow is established and the control valve is adjusted to maintain the outlet pressure at 100 Torr, the material in the vessel can cool by as much as 15°C under dynamic conditions without affecting the outlet pressure.

The terms used herein are intended to describe embodiments and are not intended to be limiting. The terms "a", "an" and "the" also include plural forms unless otherwise expressly indicated. The term "including" used in this specification specifically refers to the presence of the feature, integer, step, operation, element and/or component, but does not exclude the presence or addition of one or more other features, integer steps, operations, elements and/or components.

It should be understood that detailed changes may be made without departing from the scope of the invention, especially in the structural materials used and the shapes, sizes and configurations of the parts. This specification and the embodiments described are examples, and the true scope and spirit of the invention are indicated by the following patent application scope.

50:Carburettor system

52: Carburetor assembly

54: Tools

56: Catheter

58: Valve

60:Sensor

62:Export

64:Carburettor container

66: Internal volume

68: Source reagent

70: Valve

72: Heater

Claims (7)

A gasifier system includes: a gasifier container; an outlet fluidly connected to the gasifier container; a first valve configured to adjust a pressure of a gasified material leaving the gasifier container so that the gasified material is supplied to the outlet within a first set pressure range; and a second valve configured to adjust the pressure of the gasified material at the outlet so that the gasified material leaves the gasifier system within a second set pressure range. The system of claim 1, further comprising at least one of a temperature sensor or a pressure sensor in electronic communication with the first valve. A system as claimed in claim 1, wherein in response to the pressure of the gasified material being lower than the first set pressure range, the second valve is configured to increase the pressure of the gasified material; and wherein in response to the pressure of the gasified material being higher than the first set pressure range, the second valve is configured to reduce the pressure of the gasified material. A gasifier system includes: a gasifier container; an outlet, whose fluid is connected to the gasifier container; a heater, which is configured to heat the gasifier container; a first valve, which is configured to adjust a pressure of a gasified material leaving the gasifier container, so that the gasified material is supplied to the outlet within a first set pressure range; and a second valve, which is configured to adjust the pressure of the gasified material at the outlet, so that the gasified material leaves the gasifier system within a second set pressure range. The system of claim 4, further comprising at least one of a temperature sensor or a pressure sensor in electronic communication with the second valve. A system as claimed in claim 4, wherein in response to the pressure of the gasified material being lower than the first set pressure range, the first valve is configured to increase the pressure of the gasified material; wherein in response to the pressure of the gasified material being higher than the first set pressure range, the first valve is configured to reduce the pressure of the gasified material. A system as claimed in claim 6, wherein in response to the pressure of the vaporized material being lower than the first set pressure range or the second set pressure range, the heater is configured to increase a temperature of the vaporized material; wherein in response to the pressure being higher than the first set pressure range or the second set pressure range, the heater is configured to reduce the temperature of the vaporized material.