TWI842386B - Processed product manufacturing method, semiconductor device manufacturing method, and processed product manufacturing device - Google Patents

Abstract

The method for manufacturing a processed product comprises: a preparation step of preparing a processing object (1) including at least a lead frame having a groove (5) pre-formed along a position to be cut; a surface layer removal step of partially removing a surface layer portion (3c) of the processing object (1) having the groove (5) formed therein before cutting the processing object (1); and a coating step of coating the surface layer portion (3c) of the processing object (1) having the groove (5) formed therein before cutting the processing object (1). A coating treatment is performed on a processing object (1) having a surface layer (3c), and before a surface layer removal step is performed, the surface layer (3c) includes a cut region (3m) removed by cutting the processing object (1), and a non-cut region (3n) located between the cut region (3m) and an opening end (5c) of a groove (5), and in the surface layer removal step, at least a portion of the non-cut region (3n) is removed. Thus, a manufacturing method of a processed product capable of obtaining higher connection reliability is obtained.

Description

Processed product manufacturing method, semiconductor device manufacturing method, and processed product manufacturing device

The present invention relates to a method for manufacturing a processed product, a method for manufacturing a semiconductor device, and an apparatus for manufacturing a processed product.

As disclosed in Japanese Patent Publication No. 2011-77278 (Patent Document 1), in a processing object such as a lead frame, various processing is performed on the processing object alone, or various processing is performed on the processing object and other components such as resin that are integrated with each other, thereby obtaining a processed product (such as a finished product). Regarding the processing object (lead frame) disclosed in Patent Document 1, after a predetermined step, the surface of the processing object is subjected to plating treatment to be singulated and packaged on a substrate, etc. [Prior Art Document] [Patent Document]

[Patent Document 1] Japanese Patent Publication No. 2011-77278

[The problem that the invention wants to solve]

As disclosed in Patent Document 1, when preparing an object to be processed, a processing object is sometimes prepared in which a groove (concave portion) is pre-formed along the position to be finally cut. Due to the presence of the groove, for example, a coating film provided on the inner surface of the groove forms a concave space that is recessed inward after the lead frame is cut (after singulation in Patent Document 1). A bonding material such as solder is guided into the concave space. For example, when a semiconductor device is packaged on a substrate, the solder can be well bonded to both the bottom surface and the side surface of the lead, thereby improving the connection reliability.

Here, in the state where the object to be processed is prepared in the preparation stage, the inner surface of the groove portion may be, for example, curved into a concave surface shape. In the state where the object to be processed is prepared in the preparation stage and maintained as it is, the inner surface of the groove portion may not have a surface shape suitable for processing in subsequent steps such as guiding or joining of solder etc. In order to improve the connection reliability when using solder etc., it is preferable to set the concave space wider so that the inner surface of the groove portion has a wider joining area.

This specification is disclosed in view of the above-mentioned actual situation, and its purpose is to disclose a method for manufacturing a processed product, a method for manufacturing a semiconductor device, and a device for manufacturing a processed product, wherein, when a processed product is manufactured using a processing object with a groove pre-formed along a position to be cut, higher connection reliability can be obtained compared with the existing method. [Means for solving the problem]

The manufacturing method of the processed product disclosed herein includes: a preparation step of preparing a processing object including at least a lead frame having a groove pre-formed along a position to be cut; a surface removal step of partially removing the surface portion of the processing object where the groove is formed before cutting the processing object; and a plating step of plating the processing object from which the surface portion has been partially removed before cutting the processing object, wherein before the surface removal step is performed, the surface portion includes a cut region removed by cutting the processing object and a non-cut region between the cut region and the opening end of the groove, and at least a portion of the non-cut region is removed in the surface removal step.

The manufacturing method of the semiconductor device according to the present disclosure is a method of manufacturing the processed product using the above-mentioned manufacturing method, which comprises: a resin sealing step, in which the lead frame and the semiconductor chip are sealed with a resin material when the semiconductor chip is bonded to the lead frame; a resin removing step, in which the resin material in the groove is removed; and a cutting step, in which the lead frame is cut along the groove, and As a manufacturing method of the processed product, the surface layer removal step and the coating step are performed between the resin removal step and the cutting step, or the surface layer removal step and the coating step are performed at a stage before the resin sealing step, or the surface layer removal step is performed at a stage before the resin sealing step and the coating step is performed between the resin removal step and the cutting step.

The manufacturing device of the processed product disclosed in the present invention performs processing on a processing object including at least a lead frame having a groove pre-formed along a position to be cut, and the manufacturing device of the processed product includes: a surface removal unit, which partially removes the surface portion of the processing object where the groove is formed, when the processing object is not cut; and a plating treatment unit, which performs plating treatment on the processing object from which the surface portion is partially removed, when the processing object is not cut, and before the surface removal unit partially removes the surface portion, the surface portion includes a cut region removed by cutting the processing object, and a non-cut region between the cut region and the opening end of the groove, and the surface removal unit removes at least a portion of the non-cut region. [Effect of invention]

The disclosure provides a method for manufacturing a processed product, a method for manufacturing a semiconductor device, and an apparatus for manufacturing a processed product, wherein when a processed product is manufactured using a processing object having a groove pre-formed along a position to be cut, higher connection reliability can be obtained compared to the conventional method.

Hereinafter, the embodiment will be described with reference to the drawings. In the following description, the same reference numbers are sometimes used to mark the same or corresponding parts, and the description is not repeated. Hereinafter, the structure of the processed product manufacturing device 20 and the lead frame 1 used in the processed product manufacturing method (or the semiconductor device manufacturing method) will be described first, and then the processed product manufacturing method (or the semiconductor device manufacturing method) will be described.

[Processed product manufacturing device 20] FIG. 1 is a diagram showing a processed product manufacturing device 20. The processed product manufacturing device 20 performs processing on a processing object 22 held on a stage 21. A groove portion is pre-formed along the position to be cut in the processing object 22. Here, the groove portion is a groove portion with a bottom, and is sometimes called a bottomed groove. In the case where the processing object 22 is a lead frame 1 described later, a groove portion 5 is formed in the lead frame 1 (see FIG. 5, etc.), and the processed product manufacturing device 20 can function as a semiconductor device manufacturing device. In the following description, the processing product manufacturing device 20 is described based on an example of a case where the processed product manufacturing device 20 is a semiconductor device manufacturing device.

The manufacturing device 20 of the processed product includes: an emitting unit 23, a scanning unit 24, a control unit 25, and a coating processing unit 26. The control unit 25 controls the emitting unit 23 and the scanning unit 24 according to the prescribed processing conditions. The emitting unit 23 generates and emits laser light. The laser light emitted from the emitting unit 23 is transmitted to the scanning unit 24, and the scanning unit 24 irradiates the laser light L toward the processing object 22 using, for example, a lens and a scanner mirror. The scanning unit 24 changes the relative position of the processing object 22 and the beam spot of the laser light L, thereby scanning the laser light L on the processing object 22 along a prescribed scanning direction. In this way, a part of the processing object 22 is removed.

As will be described in detail later, the emitting unit 23, the scanning unit 24, and the control unit 25 can function as a "surface layer removal unit". The surface layer removal unit partially removes the surface layer portion (surface layer portion 3c in the lead frame 1) of the object 22 where the groove portion (groove portion 5 in the lead frame 1 (see FIG. 4)) is formed, while the object 22 is not cut.

As will be described later with reference to FIG. 4 , the surface layer portion 3 c in the lead frame 1 is partially removed by irradiation with laser light from the surface layer removal portion. The plating processing section 26 performs plating processing on the object 22 (lead frame 1) from which the surface layer portion 3 c is partially removed, without cutting the object 22 (lead frame 1).

[Manufacturing method of semiconductor device] FIG. 2 is a diagram showing a method for manufacturing a processed product and a method for manufacturing a semiconductor device using the method for manufacturing a processed product. The method for manufacturing a semiconductor device can be implemented using the manufacturing device 20 for a processed product shown in FIG. 1 . The method for manufacturing a semiconductor device includes a preparation step ST10, a resin sealing step ST12, a resin removal step ST13, a surface layer removal step ST14, a coating step ST15, and a cutting step ST16. The preparation step ST10 includes a groove forming step ST11.

(Processed product manufacturing method) The preparation step ST10, the surface layer removal step ST14, and the coating step ST15 can constitute a processed product manufacturing method. That is, the semiconductor device manufacturing method can include the processed product manufacturing method. The following describes each step in turn.

[Lead frame 1 (preparation step ST10)] FIG. 3 is a plan view showing the structure of the lead frame 1 prepared in the preparation step as viewed from the back side 1b. FIG. 4 is an arrow cross-sectional view along the IV-IV line in FIG. 3. FIG. 5 is a perspective view showing the structure of a part of the lead frame 1 (lead portion 3, tie bar 4 and groove portion 5) prepared in the preparation step as viewed from the back side 1b.

FIG3 does not show the cross-sectional structure of the lead frame 1, but for the convenience of illustration, the portion constituting the lead frame 1 is given a hatching extending in the oblique direction. Two types of hatching are used here, and the difference between them will be described later. In FIG3 to FIG5, for the convenience of explanation, the length direction S, the width direction W, and the height direction H are illustrated, and in the following description, it is appropriate to refer to these directions. These directions are also appropriately illustrated in the drawings after FIG6.

As shown in FIG3 , the lead frame 1 has a generally plate-like shape extending in both the length direction S and the width direction W. The lead frame 1 has a surface 1a located on one side on which a semiconductor chip 6 ( FIG6 ) is mounted, and a back surface 1b located on the opposite side of the surface 1a, and includes a metal such as copper. The lead frame 1 includes a plurality of die pads 2, a plurality of lead portions 3, and a plurality of tie bars 4.

(Chip pad 2, lead portion 3, tie rod 4) Multiple chip pads 2 are arranged at intervals in both the length direction S and the width direction W. A semiconductor chip 6 is mounted on the surface 1a of the lead frame 1 (see Figure 6). Multiple lead portions 3 are arranged in a rectangular shape around each of the multiple chip pads 2 (on all four sides). Multiple tie rods 4 are arranged in a grid shape in a manner to surround each of the multiple chip pads 2. Multiple lead portions 3 are provided on both sides of a tie rod 4, and the multiple lead portions 3 are arranged at intervals along the extension direction of the tie rod 4. Each of the multiple lead portions 3 has a thick wall portion 3a and a thin wall portion 3b (Figure 3, Figure 5). In the lead portion 3, the thick wall portion 3a is connected to the tie rod 4 via the thin wall portion 3b. In the height direction H, the die pad 2 and the thick wall portion 3a have a greater height dimension (i.e., thickness) than the thin wall portion 3b.

The die pad 2 and the thick wall portion 3a are shaded from the upper right side to the lower left side of the paper of Fig. 3. The thin wall portion 3b of the lead portion 3 and the tie bar 4 are shaded from the upper left side to the lower right side of the paper of Fig. 3.

(Groove 5) Referring to FIG. 5, here, regarding the tie rod 4, the thick wall portion 3a and the thin wall portion 3b of the lead portion 3, if the surface located on the "negative side of the height direction H" shown in FIG. 5 is focused, the height positions of these surfaces are the same. On the other hand, if the surface located on the "positive side of the height direction H" shown in FIG. 5 is focused, the height position of the surface of the thick wall portion 3a of the lead portion 3 is higher than the height position of the surface of the tie rod 4 and the height position of the surface of the thin wall portion 3b of the lead portion 3.

That is, the surface on the front side of the tie bar 4 and the surface on the front side of the thin-walled portion 3b of the lead portion 3 are recessed relative to the surface on the front side of the thick-walled portion 3a of the lead portion 3. With this structure, in the lead frame 1, a lattice-shaped groove portion 5 extending in the height direction H and the width direction W and extending in the height direction H and the length direction S is formed on the back side 1b (FIG. 3) of the tie bar 4.

The groove portion 5 does not penetrate the lead frame 1 in the height direction H, and can be formed by etching (wet etching) the lead frame 1, for example, with a groove depth half that of the lead frame 1 (thick wall portion 3a). The groove width is, for example, 0.30 mm to 0.50 mm. The groove width and groove depth can be set in consideration of the strength to ensure that no deformation or other defects occur in subsequent steps, good appearance inspection can be performed in subsequent steps, and good packaging strength of the semiconductor device as a finished product.

As shown in FIG4 , the groove 5 is a space defined by the bottom 5a of the groove 5, the side 5b of the groove 5, and the open end 5c of the groove 5. The open end 5c of the groove 5 is the inner edge portion of the groove 5 formed on the back surface 1b of the lead frame 1, and extends in a straight line ( FIG5 ). The bottom 5a of the groove 5 has a substantially flat surface. The side 5b of the groove 5 is curved so that it is located closer to the bottom 5a of the groove 5 than the open end 5c of the groove 5 in the width direction.

As shown in FIGS. 4 and 5 (especially FIG. 4 ), the lead frame 1 has a surface portion 3c in which a groove 5 is formed. In FIG. 4 , the surface portion 3c is indicated by a dotted line. The surface portion 3c of the lead frame 1 is a portion of the lead frame 1 defined by a range from the outer surface of the lead frame 1 to a predetermined depth, and is a portion in which the groove 5 is formed. The surface shape of the surface portion 3c forms (divides) the groove 5 as a space. As shown in the cross-sectional shape of FIG. 4 , the surface portion 3c has a predetermined thickness, and here extends in a U-shape or a C-shape. Furthermore, the "range to a predetermined depth" and "predetermined thickness" mentioned here are not limited to a structure in which the surface portion 3c has a certain (uniform) thickness in the width direction W. As long as the groove portion 5 is formed, the surface layer portion 3c may have any thickness in the width direction W, and may have different thicknesses in the width direction W.

As will be described in detail later, the lead frame 1 is singulated by performing the cutting step ST16 (see FIG. 14 ). The surface layer portion 3c includes a cutting region 3m removed by cutting the lead frame 1, and a non-cutting region 3n located between the cutting region 3m and the opening end 5c of the groove portion 5. In FIG. 4 , the blade 12 used in the cutting step ST16 is virtually illustrated using a two-point chain.

The cutting area 3m is located inside the frame of the two-point chain line representing the blade 12, and the non-cutting area 3n is located outside the frame of the two-point chain line representing the blade 12. The surface portion 3c includes a boundary portion 3t between the cutting area 3m and the non-cutting area 3n. The surface 3q of the boundary portion 3t is located on the two-point chain line representing the blade 12. Furthermore, the width and position of the frame of the two-point chain line are schematically described, and the range actually removed by cutting is wider than the width of the blade 12.

The surface shape 3p of the cutting area 3m corresponds to the bottom 5a of the groove 5. The surface shape 3r of the non-cutting area 3n corresponds to the side 5b of the groove 5. The upper end portion 3s of the surface shape 3r of the non-cutting area 3n corresponds to the open end 5c of the groove 5. In the example shown in FIG. 4 , the entire side 5b of the groove 5 is included in the surface shape 3r of the non-cutting area 3n. The bottom 5a (flat surface) of the groove 5 may also be included in the lower end portion of the surface shape 3r of the non-cutting area 3n (in other words, a portion of the bottom 5a of the groove 5 may also be included in the non-cutting area 3n).

(Resin sealing step) FIG6 is a cross-sectional view showing a state where a semiconductor chip 6 is bonded to the lead frame 1 (die pad 2) prepared in the preparation step. As shown in FIG6 , a plurality of electrodes provided on each semiconductor chip 6 are electrically connected to the lead portion 3 (thick wall portion 3a) via bonding wires 7.

Fig. 7 is a cross-sectional view showing a state in which a resin sealing step is performed. In the resin sealing step, the lead frame 1 and the semiconductor chip 6 are sealed by a resin material 9 in a state in which the semiconductor chip 6 is bonded. Before the resin sealing step, a protective film 8 (e.g., a polyimide resin tape) may be attached to the side of the groove portion 5 of the lead frame 1, and the resin sealing may be performed after the protective film 8 is attached.

The method for manufacturing a semiconductor device may further include the following step somewhere between the resin sealing step and the cutting step described later: laser marking is performed by irradiating the surface 9a (FIG. 7) opposite to the groove 5 of the lead frame 1 by irradiating the laser light L1. By using a pulsed laser and scanning with a scanning optical system, it is possible to print arbitrary information such as a model number or a serial number.

As shown in FIG8 , before the resin removal step described below is performed, the protective film 8 is peeled off from the lead frame 1. By removing the protective film 8, the resin material 9 (9b) formed in the groove 5 of the lead frame 1 is exposed. Furthermore, the protective film 8 may also be peeled off from the lead frame 1 before the laser marking step described with reference to FIG7 is performed.

(Resin removal step) FIG. 9 is a cross-sectional view showing the resin removal step. In the resin removal step, the resin material 9 (9b) in the groove 5 is irradiated with laser light L2, and the laser light L2 is scanned along the longitudinal direction S. Thereby, the resin material in the groove 5 is removed. As the laser light L2, for example, an infrared laser, a green laser, or an ultraviolet laser can be used in the form of a pulse laser.

Regarding the pulse width, a laser that generates a pulse width of nanoseconds or picoseconds can be used. In addition, by controlling the emitting unit 23 and the scanning unit 24 using the control unit 25 (FIG. 1), the processing conditions based on the laser light L2 can be changed. According to the material of the resin material 9 (9b) or the size of the resin material 9 (9b) (the groove width of the groove 5, etc.), the wavelength, output, laser focusing diameter, irradiation time, etc. of the laser light L2 are optimized so that the resin material 9 (9b) can be removed efficiently.

(Surface removal step) FIG. 10 is a cross-sectional view showing the state of the surface removal step. FIG. 11 is a plan view for explaining the range of the surface removal step. In the surface removal step, before the lead frame 1 is cut (in other words, before the cutting step is performed), the surface portion 3c of the lead frame 1 where the groove portion 5 is formed is partially removed. The surface removal step is performed using, for example, a laser. In order to efficiently process the material (copper, etc.) of the lead frame 1 and suppress the influence of heat, an oscillator with a short pulse (less than picoseconds) can be used. The surface removal step can also be performed by other grinding components or other polishing components.

Referring to FIG. 10 , before the surface layer removal step is performed, the surface layer portion 3c of the lead frame 1 includes a cut region 3m removed by cutting the lead frame 1, and a non-cut region 3n located between the cut region 3m and the opening end 5c of the groove portion 5. Before the surface layer removal step is performed, the surface shape 3r of the non-cut region 3n is curved so as to be located closer to the bottom 5a of the groove portion 5 than the opening end 5c of the groove portion 5 in the center in the groove width direction. In FIG. 10 , the side wall portion of the blade 12 used in the cutting step ST16 is only virtually illustrated using a two-point chain.

In the surface layer removal step, laser light L3 is irradiated toward at least the non-cutting area 3n, and the laser light L3 is scanned along the length direction S (see FIG. 11 ). In this way, at least a portion of the non-cutting area 3n is removed. For example, a depth of 30 μm to 40 μm can be removed from the surface layer portion 3c. As the laser light L3, for example, a short pulse laser such as a picosecond pulse laser can be used.

FIG. 12 is a cross-sectional view showing a part of FIG. 10 in an enlarged manner, and shows the state after the surface layer removal step is performed. In the examples shown in FIG. 10 and FIG. 12, a portion slightly below the central portion in the height direction (close to the bottom 5a of the groove portion 5) in the non-cutting area 3n is removed. Furthermore, the portions on both sides in the width direction of the cutting area 3m are also slightly removed. That is, in the surface layer removal step here, in addition to removing at least a portion of the non-cutting area 3n, a portion of the cutting area 3m close to the non-cutting area 3n is also removed.

In a state after the surface layer removal step is performed and before the lead frame 1 is cut, the surface layer portion 3c of the lead frame 1 includes the boundary portion 3t between the cutting region 3m and the non-cutting region 3n. When the position of the surface of the surface layer portion 3c in the depth direction of the groove portion 5 is defined as "height", in a state after the surface layer removal step is performed and before the lead frame 1 is cut, the height H1 of the surface of the cutting region 3m is equal to the height H2 of the surface 3q of the boundary portion 3t, or the height H1 of the surface of at least a portion of the cutting region 3m is higher than the height H2 of the surface 3q of the boundary portion 3t (the height position of the surface 3q of the boundary portion 3t is located at a lower height position than the surface of at least a portion of the cutting region 3m).

(Plating step) FIG. 13 is a cross-sectional view showing the state after the plating step. After the surface removal step is performed and before the lead frame 1 is cut, the lead frame 1 from which the surface portion 3c is partially removed is subjected to plating. The plating layer 10 is formed on the surface of the die pad 2 of the lead frame 1, the surface of the tie bar 4 of the lead frame 1, the surface of the thin-walled portion 3b of the lead portion 3, and the surface of the surface portion 3c where the surface removal step is performed. By forming the plating layer 10, the method for manufacturing the processed product is completed, and the lead frame 1 formed with the plating layer 10 at this time constitutes a "processed product".

As the material of the plating layer 10, a material with good solder wettability can be selected according to the solder material used in the package. For example, when using Sn (tin)-based solder, tin (Sn), tin-copper alloy (Sn-Cu), tin-silver alloy (Sn-Ag), tin-bismuth (Sn-Bi), etc. can be used.

In the plating step, the lead frame 1 may be subjected to a predetermined cleaning process before the plating process. The surface treatment of the lead frame 1 as a pre-treatment of the plating step may include, in addition to the cleaning process, treatment for removing oxide films, surface activation, etc. The resin material 9 in the groove portion 5 may be modified (e.g., carbonized) by irradiation with laser light. Even if a small amount of the resin material 9 remains, the modified resin material 9 can be removed from the groove portion 5 by performing a surface treatment such as a cleaning process before the plating process.

(Cutting step) As shown in FIG. 14, the plated lead frame 1 is cut along the groove 5. In the cutting step, the blade 12 is used to cut the lead frame 1 and the resin material 9 by the total thickness. By implementing the cutting step, a plurality of semiconductor devices 11 as unit resin molded products can be obtained. As shown in FIG. 15, the semiconductor device 11 is a leadless product of the Quad Flat Non-leaded Package (QFN) type in which the leads for electrical connection do not protrude toward the outside of the product when viewed from above.

FIG. 16 is a cross-sectional view showing a semiconductor device 11 packaged. As shown in FIG. 16 , in the semiconductor device 11, a step is formed on the side (single side) of each lead portion 3, and the plating layer 10 is not formed on the side surface 3d of the lead portion 3, but the original metal is exposed. The semiconductor device 11 is packaged on a printed circuit board, for example, with the side of the resin material 9 being the upper side and the side of the lead portion 3 being the lower side. On the printed circuit board, a pad 13 is formed at a position corresponding to the lead portion 3, and the lead portion 3 is connected to the pad 13 via solder 14.

At this time, since the solder 14 is accumulated inside the portion (recess) of the surface layer portion 3c (FIG. 12) of the lead frame 1 where the surface layer removal step is performed, the wettability of the solder 14 is improved, and a better solder joint structure can be obtained. By performing the surface layer removal step, the joint area (surface area) of the recessed portion is increased, and further, the volume of the recessed portion that can guide the solder 14 is also increased.

FIG. 17 is a cross-sectional view showing a semiconductor device packaged by the manufacturing method of the comparative example. In the comparative example, since the surface layer removal step is not performed, the bonding area (surface area) and volume of the portion corresponding to the recess are small. In contrast, according to the implementation method (FIG. 16), when a processed product is manufactured using a processing object in which a groove is pre-formed along the position to be cut, higher connection reliability can be obtained compared to the conventional method. In addition, by performing the surface layer removal step, the height HS of the recess portion can be further increased, and inspection using an automatic inspection machine for inspecting the solder 14 becomes easier, and a higher precision result can be obtained.

When the groove 5 of the lead frame 1 is formed by wet etching, the surface shape 3r of the non-cut region 3n is easily bent so as to be located closer to the bottom 5a of the groove 5 and closer to the center of the groove width direction than the opening end 5c of the groove 5. When wet etching is performed, the above effect can be obtained by performing a surface layer removal step on the surface shape 3r of the non-cut region 3n as described above.

As shown in FIG. 18 , in the embodiment, when the position of the surface of the surface layer portion 3c in the depth direction of the groove portion 5 is defined as “height”, after the surface layer removal step is performed and before the lead frame 1 is cut, the height H1 of the surface of the cutting area 3m is equal to the height H2 of the surface 3q of the boundary portion 3t, or the height H1 of the surface of at least a portion of the cutting area 3m is higher than the height H2 of the surface 3q of the boundary portion 3t. In the latter case, the height position of the surface 3q of the boundary portion 3t is located at a lower height position than the height position of at least a portion of the surface of the cutting area 3m. With this structure, when the blade 12 is used for cutting, the blade 12 first contacts the portion of the height H1 in the cutting area 3m. At the time point, a gap 3w is formed below both sides of the blade 12 in the width direction ( FIG. 18 ). Then, the blade 12 contacts the portion of the boundary portion 3t having a height H2 (the surface 3q of the boundary portion 3t). In this way, since the thickness of the lead frame 1 becomes thinner at both ends of the blade 12, the occurrence of burrs at the boundary portion 3t can be reduced.

[First variant] FIG. 19 corresponds to FIG. 12 and is a cross-sectional view for explaining the surface layer removal step related to the first variant of the embodiment. In the above example (FIG. 18, etc.), in addition to removing at least a portion of the non-cutting area 3n, the end of the cutting area 3m (corresponding to the portion of the gap 3w shown in FIG. 18) is also removed. This structure is not necessary. As shown in FIG. 19, when the cutting area 3m is flat and the side portion 5b of the groove portion 5 is not included in the cutting area 3m, the cutting area 3m may not be removed in the surface layer removal step. By performing the surface removal step only on the non-cutting area 3n and not on the cutting area 3m, the purpose of forming the recess that helps guide or join the solder can also be achieved. Corresponding to not performing the surface removal step on the cutting area 3m, the manufacturing time can be shortened.

[Second variant] FIG. 20 corresponds to FIG. 12 and is a cross-sectional view for explaining the surface removal step related to the second variant of the embodiment. After the surface removal step is performed and before the lead frame 1 is cut, the portion where the surface of the cut area 3m and the surface of the non-cut area 3n are connected to each other (i.e., the surface of the boundary portion 3t) may be in the shape of a flat surface, and the flat surface may be approximately orthogonal to the depth direction of the groove 5 (the direction orthogonal to the back surface 1b). According to this structure, the occurrence of burrs on the boundary portion 3t can also be reduced.

FIG. 21 corresponds to FIG. 12 and is a cross-sectional view for explaining the surface layer removal step related to the third variant of the embodiment. As shown in FIG. 21, after the surface layer removal step is performed and before the lead frame 1 is cut, the surface shape 3r of the non-cutting area 3n (i.e., the side 5b of the groove 5) can extend in a manner substantially parallel to the depth direction of the groove 5 (the direction orthogonal to the back surface 1b). By performing the surface layer removal step to the extent shown in FIG. 21, a recess that helps guide or join the solder can be fully formed. In addition, by making the recess deeper, when the semiconductor device is packaged, the solder wetting height on the package side is ensured, and inspection using an automatic inspection machine becomes easier.

In addition, as shown in FIG21, similarly to the case described with reference to FIG20, the portion where the surface of the cutting area 3m and the surface of the non-cutting area 3n are connected to each other (i.e., the surface of the boundary portion 3t) is in the shape of a flat surface, and the flat surface can be substantially orthogonal to the depth direction of the groove 5 (the direction orthogonal to the back surface 1b). In the structure shown in FIG21, the surface shape 3r of the non-cutting area 3n (i.e., the side 5b of the groove 5) and the surface shape 3p of the cutting area 3m (i.e., the bottom 5a of the groove 5) are orthogonal to each other. Even with this structure, the occurrence of burrs at the boundary portion 3t can be reduced.

[Fourth Modification] As described above, the method for manufacturing a processed product can be composed of a preparation step ST10, a surface layer removal step ST14, and a coating step ST15. In the case of the embodiment described above (FIG. 2), the surface layer removal step ST14 and the coating step ST15 are performed between the resin removal step ST13 and the cutting step ST16.

Fig. 22 is a diagram showing a method for manufacturing a processed product according to a fourth modification of the embodiment, and a method for manufacturing a semiconductor device using the method for manufacturing a processed product. As shown in Fig. 22, after the steps (preparation step ST10, surface layer removal step ST14, and coating step ST15) related to the method for manufacturing a processed product are performed, the resin sealing step ST12, the resin removal step ST13, and the cutting step ST16 may be performed. In the example shown in Fig. 22, the surface layer removal step ST14 and the coating step ST15 are performed at a stage before the resin sealing step ST12. In the plating step in the above case, for example, pre-palladium plating (such as Ni/Pd/Au plating) or full-surface Pd plating can be used.

As an implementation subject, for example, the lead frame manufacturer can perform the process up to the coating step ST15, and the semiconductor device manufacturer can perform all the steps after the resin sealing step ST12. Alternatively, the lead frame manufacturer can perform the process up to the surface layer removal step ST14, and the semiconductor device manufacturer can perform the steps after the coating step ST15.

[Fifth variant] FIG. 23 is a diagram showing a method for manufacturing a processed product related to a fifth variant of the embodiment, and a method for manufacturing a semiconductor device using the method for manufacturing a processed product. As shown in FIG. 23, the steps related to the method for manufacturing a processed product may be performed discontinuously. After performing the preparation step ST10, the surface layer removal step ST14, the resin sealing step ST12, the resin removal step ST13, the coating step ST15, and the cutting step ST16 may be performed in sequence. In the example shown in FIG. 23 , the surface layer removal step ST14 is performed at a stage before the resin sealing step ST12, and the coating step ST15 is performed between the resin removal step ST13 and the cutting step ST16.

As an implementation subject, for example, the lead frame manufacturer can perform the steps up to the preparation step ST10, and the semiconductor device manufacturer can perform all the steps after the surface layer removal step ST14. Alternatively, the lead frame manufacturer can perform the steps up to the surface layer removal step ST14, and the semiconductor device manufacturer can perform the steps thereafter.

The above descriptions of the embodiments are provided, but the disclosures are illustrative and non-restrictive in all aspects. The technical scope of the present invention is indicated by the scope of the patent application, which means that it includes all changes within the meaning and scope equivalent to the scope of the patent application.

1: Lead frame (object to be processed) 1a, 3q, 9a: Surface 1b: Back 2: Die pad 3: Lead part 3a: Thick wall part 3b: Thin wall part 3c: Surface part 3d: Side 3m: Cutting area 3n: Non-cutting area 3p, 3r: Surface shape 3s: Top part 3t: Boundary part 3w: Gap 4: Tie bar 5: Groove part 5a: Bottom 5b: Side 5c: Open end 6: Semiconductor chip 7: Bonding wire 8: Protective film 9, 9b: Resin material 10: Plating layer 11: Semiconductor device 12: Blade 13: Pad 14: Solder 20: Processing device 21: Carrier 22: Processing object 23: Injection unit 24: Scanning unit 25: Control unit 26: Plating processing unit H1, H2, HS: Height L, L1, L2, L3: Laser light ST10: Preparation step ST11: Groove forming step ST12: Resin sealing step ST13: Resin removal step ST14: Surface removal step ST15: Plating step ST16: Cutting step S: Length direction W: Width direction H: Height direction

FIG. 1 is a diagram showing a manufacturing device 20 for a processed product. FIG. 2 is a diagram showing a manufacturing method for a processed product and a manufacturing method for a semiconductor device using the manufacturing method for a processed product. FIG. 3 is a plan view showing the structure of the lead frame 1 prepared in the preparation step as viewed from the back side 1b. FIG. 4 is an arrow cross-sectional view along the IV-IV line in FIG. 3. FIG. 5 is a perspective view showing the structure of a part (lead portion 3, tie bar 4 and groove portion 5) of the lead frame 1 prepared in the preparation step as viewed from the back side 1b. FIG. 6 is a cross-sectional view showing a state in which a semiconductor chip 6 is bonded to the lead frame 1 (die pad 2) prepared in the preparation step. FIG. 7 is a cross-sectional view showing a state in which a resin sealing step has been performed. FIG8 is a cross-sectional view showing a state where the protective film is removed before the resin removal step is performed. FIG9 is a cross-sectional view showing a state where the resin removal step is performed. FIG10 is a cross-sectional view showing a state where the surface layer removal step is performed. FIG11 is a plan view for explaining the range of the surface layer removal step. FIG12 is a cross-sectional view showing a portion of FIG10 in an enlarged manner, and showing a state after the surface layer removal step is performed. FIG13 is a cross-sectional view showing a state after the plating step is performed. FIG14 is a cross-sectional view showing a state where the cutting step is performed. FIG15 is a perspective view showing a semiconductor device obtained by the manufacturing method of the embodiment. FIG. 16 is a cross-sectional view showing a semiconductor device obtained by the manufacturing method of the embodiment and packaged. FIG. 17 is a cross-sectional view showing a semiconductor device obtained by the manufacturing method of the comparative example and packaged. FIG. 18 corresponds to FIG. 12 and is a cross-sectional view for explaining the functions and effects related to the embodiment. FIG. 19 corresponds to FIG. 12 and is a cross-sectional view for explaining the surface layer removal step related to the first variant of the embodiment. FIG. 20 corresponds to FIG. 12 and is a cross-sectional view for explaining the surface layer removal step related to the second variant of the embodiment. FIG. 21 corresponds to FIG. 12 and is a cross-sectional view for explaining the surface layer removal step related to the third variant of the embodiment. FIG. 22 is a diagram showing a method for manufacturing a processed product related to a fourth variant of the embodiment, and a method for manufacturing a semiconductor device using the method for manufacturing a processed product. FIG. 23 is a diagram showing a method for manufacturing a processed product related to a fifth variant of the embodiment, and a method for manufacturing a semiconductor device using the method for manufacturing a processed product.

1b: Back

3: Lead wire part

3c: Surface part

3m: Cut-off area

3n: Non-cut-off area

3p, 3r: surface shape

3q: Surface

3s: upper part

3t:Border part

4: Tie rod

5: Groove

5a: Bottom

5b: Side

5c: Open end

12: Blade

L3: Laser light

S: Length direction

W: width direction

H: height direction

Claims (9)

A method for manufacturing a processed product, comprising: a preparation step of preparing a processing object including at least a lead frame having a groove pre-formed along a position to be cut; a surface removal step of partially removing a surface portion of the processing object having the groove formed therein before cutting the processing object; and a plating step of plating the processing object from which the surface portion has been partially removed before cutting the processing object, wherein before the surface removal step is performed, the surface portion includes a cutting area removed by cutting the processing object and a surface portion located in the cutting area. The non-cutting area between the cutting area and the opening end of the groove portion is removed in the surface removal step. After the surface removal step is performed and before the object to be processed is cut, the surface portion includes a boundary portion between the cutting area and the non-cutting area. When the position of the surface of the surface portion in the depth direction of the groove portion is defined as the height, after the surface removal step is performed and before the object to be processed is cut, the height of the surface of at least a portion of the non-cutting area is lower than the height of the surface of the boundary portion. A method for manufacturing a processed product as described in claim 1, wherein in the surface layer removal step, in addition to removing at least a portion of the non-cutting area, a portion of the cutting area close to the non-cutting area is also removed. A method for manufacturing a processed product as described in claim 1 or claim 2, wherein before the surface layer removal step is performed, the surface shape of the non-cutting area is curved in such a way that the closer to the bottom of the groove portion, the closer to the center of the opening end of the groove portion in the groove width direction. A method for manufacturing a processed product as described in claim 1 or claim 2, wherein after the surface layer removal step is performed and before the processed object is cut, the height of the surface of at least a portion of the cut area is higher than the height of the surface of the boundary portion. A method for manufacturing a processed product as described in claim 1 or claim 2, wherein after the surface layer removal step is performed and before the processed object is cut, the portion where the surface of the cut area and the surface of the non-cut area are connected to each other is in the shape of a flat surface, and the flat surface is approximately orthogonal to the depth direction of the groove. A method for manufacturing a processed product as described in claim 1 or claim 2, wherein the surface layer removal step is performed using a laser. A method for manufacturing a processed product as described in claim 1 or claim 2, wherein the processing object prepared in the preparation step has the groove portion formed by wet etching. A method for manufacturing a semiconductor device, using the method for manufacturing a processed product as described in any one of claim 1 to claim 7, the method for manufacturing a semiconductor device comprising: a resin sealing step, in which the lead frame and the semiconductor chip are sealed with a resin material when the semiconductor chip is bonded to the lead frame; a resin removing step, in which the resin material in the groove is removed; and a cutting step, in which a resin material is cut along the groove. The lead frame, and as a manufacturing method of the processed product, the surface removal step and the coating step are performed between the resin removal step and the cutting step, or the surface removal step and the coating step are performed at a stage before the resin sealing step, or the surface removal step is performed at a stage before the resin sealing step, and the coating step is performed between the resin removal step and the cutting step. A manufacturing device for a processed product performs processing on a processing object including at least a lead frame having a groove pre-formed along a position to be cut, the manufacturing device for the processed product comprising: a surface layer removing section for partially removing a surface layer portion of the processing object where the groove is formed, when the processing object is not cut; and a plating treatment section for performing plating treatment on the processing object from which the surface layer portion is partially removed, when the processing object is not cut, and before the surface layer removing section partially removes the surface layer portion, the surface layer portion includes a portion formed by cutting the processing object. The removed cutting area and the non-cutting area between the cutting area and the opening end of the groove, the surface removal part removes at least a portion of the non-cutting area, and before the surface removal part partially removes the surface part, the surface part includes a boundary part between the cutting area and the non-cutting area, and when the position of the surface of the surface part in the depth direction of the groove is defined as the height, before the surface removal part partially removes the surface part, the height of the surface of at least a portion of the non-cutting area is lower than the height of the surface of the boundary part.