TWI841294B - Flexible printed circuit board and method for producing the same - Google Patents

Flexible printed circuit board and method for producing the same Download PDF

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TWI841294B
TWI841294B TW112109591A TW112109591A TWI841294B TW I841294 B TWI841294 B TW I841294B TW 112109591 A TW112109591 A TW 112109591A TW 112109591 A TW112109591 A TW 112109591A TW I841294 B TWI841294 B TW I841294B
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conductive layer
circuit board
conductive
interface
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李榮和
蕭嘉豪
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國立中興大學
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Abstract

The present invention relates to a flexible printed circuit board and a method for producing the same. The flexible printed circuit board comprises a polyimide substrate, an interface layer, an electrical-conducting layer and a metal layer. The interface layer is disposed between the polyimide substrate and the electrical-conducting layer, and the metal layer is disposed on the electrical-conducting layer. It is unnecessary to produce the flexible printed circuit board with palladium catalyst, thereby lowering manufacturing cost. Besides, the flexible printed circuit board has excellent electrical-conducting properties, and the metal layer has excellent adhering properties to the electrical-conducting layer.

Description

軟性電路板與其製作方法Flexible circuit board and manufacturing method thereof

本發明係有關一種軟性電路板,特別是提供一種不須使用鈀金屬觸媒來形成導電金屬層的軟性電路板與其製作方法。The present invention relates to a flexible circuit board, and in particular to a flexible circuit board and a manufacturing method thereof which does not require the use of a palladium metal catalyst to form a conductive metal layer.

隨著電子產品之發展越趨輕薄,電子零組件之尺寸係日漸縮小。其中,為了滿足此些發展趨勢,用以導通電流之軟性電路板係日益重要。一般軟性電路板係於聚醯亞胺基材上貼附金屬銅層,惟黏著層之使用無法滿足薄化應用之需求。另一種軟性電路板之製作係以化學電鍍製程於聚醯亞胺基材上形成無電電鍍層,而可進一步藉由電鍍製程來形成金屬層。As electronic products become thinner and lighter, the size of electronic components is shrinking. In order to meet these development trends, flexible circuit boards for conducting current are becoming increasingly important. Conventional flexible circuit boards are made by attaching a metal copper layer to a polyimide substrate, but the use of an adhesive layer cannot meet the needs of thinning applications. Another type of flexible circuit board is to form an electroless plating layer on a polyimide substrate using a chemical plating process, and a metal layer can be further formed by an electroplating process.

習知用以形成金屬層之化學電鍍製程可採用乾式法或濕式法。乾式法係先形成矽氧烷層於聚醯亞胺基材上,再利用電漿,以於矽氧烷之末端基連接上鈀金屬團簇,進而可藉由鈀金屬觸媒之還原反應來形成金屬層。濕式法係先對聚醯亞胺進行開環反應,再使用鈀金屬來進行離子交換反應,而可形成金屬層。故,化學電鍍製程須使用昂貴且稀缺之鈀金屬觸媒,而導致其製作成本無法有效降低。It is known that the chemical plating process used to form the metal layer can be a dry method or a wet method. The dry method first forms a siloxane layer on a polyimide substrate, and then uses plasma to connect palladium metal clusters to the end groups of the siloxane, and then the metal layer can be formed by the reduction reaction of the palladium metal catalyst. The wet method first performs a ring-opening reaction on the polyimide, and then uses palladium metal to perform an ion exchange reaction to form a metal layer. Therefore, the chemical plating process must use expensive and scarce palladium metal catalysts, which results in that its manufacturing cost cannot be effectively reduced.

有鑑於此,亟須提供一種軟性電路板與其製作方法,以改進習知軟性電路板的缺陷。In view of this, there is an urgent need to provide a flexible circuit board and a manufacturing method thereof to improve the defects of the conventional flexible circuit board.

因此,本發明之一態樣是在提供一種軟性電路板,其係藉由以特定化合物所形成之介面層來提升導電層與聚醯亞胺基材間之結合性,而可取代化學電鍍所使用之無電電鍍層,故不須使用鈀金屬觸媒。Therefore, one aspect of the present invention is to provide a flexible circuit board, which can replace the electroless plating layer used in chemical plating by improving the bonding between the conductive layer and the polyimide substrate through an interface layer formed by a specific compound, so that the use of a palladium metal catalyst is not required.

本發明之另一態樣是在提供一種軟性電路板的製作方法,其係藉由對聚醯亞胺基材進行表面處理,而有助於介面層之形成,進而可使後續所形成之導電層可藉由介面層所提供之共價鍵結,良好地與聚醯亞胺基材結合,故可藉由一般之電鍍製程來形成電鍍金屬層。Another aspect of the present invention is to provide a method for manufacturing a flexible circuit board, which is to facilitate the formation of an interface layer by surface treatment of a polyimide substrate, so that the conductive layer formed subsequently can be well bonded to the polyimide substrate through the covalent bonding provided by the interface layer, so that the electroplated metal layer can be formed by a general electroplating process.

根據本發明之一態樣,提出一種軟性電路板。此軟性電路板包含聚醯亞胺基材、介面層、導電層與金屬層。其中,介面層係藉由共價鍵結來設置於聚醯亞胺基材與導電層之第一表面之間,且金屬層係設置於導電層之第二表面上。介面層之材料包含第一多胺類高分子。According to one aspect of the present invention, a flexible circuit board is provided. The flexible circuit board comprises a polyimide substrate, an interface layer, a conductive layer and a metal layer. The interface layer is disposed between the polyimide substrate and the first surface of the conductive layer by covalent bonding, and the metal layer is disposed on the second surface of the conductive layer. The material of the interface layer comprises a first polyamine polymer.

依據本發明之一些實施例,前述之多胺類高分子具有至少50個胺基。According to some embodiments of the present invention, the aforementioned polyamine polymer has at least 50 amino groups.

依據本發明之一些實施例,前述之導電層包含石墨烯材料。According to some embodiments of the present invention, the aforementioned conductive layer includes graphene material.

依據本發明之一些實施例,前述之導電層包含複數個導電子層與至少一介面子層。介面層係藉由共價鍵結來設置於聚醯亞胺基材與此些導電子層的一者之間。至少一介面子層之每一者係藉由共價鍵結來設置於導電子層的相鄰二者之間,且至少一介面子層之材料包含第二多胺類高分子。According to some embodiments of the present invention, the aforementioned conductive layer comprises a plurality of conductive sublayers and at least one interface sublayer. The interface layer is disposed between the polyimide substrate and one of the conductive sublayers by covalent bonding. Each of the at least one interface sublayer is disposed between two adjacent conductive sublayers by covalent bonding, and the material of the at least one interface sublayer comprises a second polyamine polymer.

依據本發明之一些實施例,前述之金屬層包含奈米金屬顆粒與電鍍金屬層,其中奈米金屬顆粒分布於第二表面上,而電鍍金屬層係設置於第二表面上。According to some embodiments of the present invention, the aforementioned metal layer includes nanometal particles and an electroplated metal layer, wherein the nanometal particles are distributed on the second surface, and the electroplated metal layer is disposed on the second surface.

根據本發明之另一態樣,提出一種軟性電路板的製作方法。此製作方法係先對聚醯亞胺基材之表面進行表面處理製程,以使此表面具有親水性官能基,再對親水性官能基與第一多胺類高分子進行反應,以形成介面層。其中,介面層係以第一共價鍵與聚醯亞胺基材結合。然後,對介面層與導電材料進行結合反應,以形成導電層於介面層上。其中,導電層係以第二共價鍵與介面層結合。接著,形成金屬層於導電層上。According to another aspect of the present invention, a method for manufacturing a flexible circuit board is proposed. This manufacturing method first performs a surface treatment process on the surface of a polyimide substrate to make the surface have hydrophilic functional groups, and then reacts the hydrophilic functional groups with a first polyamine polymer to form an interface layer. The interface layer is bonded to the polyimide substrate with a first covalent bond. Then, the interface layer is subjected to a bonding reaction with a conductive material to form a conductive layer on the interface layer. The conductive layer is bonded to the interface layer with a second covalent bond. Then, a metal layer is formed on the conductive layer.

依據本發明之一些實施例,前述之表面處理製程包含對聚醯亞胺基材施加鹼性溶液。According to some embodiments of the present invention, the aforementioned surface treatment process includes applying an alkaline solution to the polyimide substrate.

依據本發明之一些實施例,前述之導電層包含石墨烯材料,且於進行結合反應前,此製作方法包含對石墨烯原料進行分散步驟,以獲得此石墨烯材料。According to some embodiments of the present invention, the aforementioned conductive layer comprises a graphene material, and before the bonding reaction, the manufacturing method comprises performing a stepwise separation on the graphene raw material to obtain the graphene material.

依據本發明之一些實施例,於形成前述之金屬層前,此製作方法可包含對導電層進行還原反應。According to some embodiments of the present invention, before forming the aforementioned metal layer, the manufacturing method may include performing a reduction reaction on the conductive layer.

依據本發明之一些實施例,前述之結合反應係進行複數次。According to some embodiments of the present invention, the aforementioned binding reaction is performed multiple times.

依據本發明之一些實施例,於進行前述每一次之結合反應前,添加第二多胺類高分子,以使此第二多胺類高分子與導電材料共價結合。According to some embodiments of the present invention, before each of the aforementioned bonding reactions, a second polyamine polymer is added to allow the second polyamine polymer to be covalently bonded to the conductive material.

依據本發明之一些實施例,前述形成金屬層之操作係先形成複數個奈米金屬顆粒於導電層上,再形成電鍍金屬層於導電層上。其中,此些奈米金屬顆粒係分布於電鍍金屬層與導電層之間。According to some embodiments of the present invention, the operation of forming the metal layer is to first form a plurality of nanometal particles on the conductive layer, and then form an electroplated metal layer on the conductive layer, wherein the nanometal particles are distributed between the electroplated metal layer and the conductive layer.

應用本發明之軟性電路板與其製作方法,其藉由設置介面層於導電層與聚醯亞胺基材之間,並使介面層同時與導電層與聚醯亞胺基材形成共價鍵結,而可提升導電層與聚醯亞胺基材之結合性,進而可藉由導電層來取代一般化學電鍍之無電電鍍層,故本發明之軟性電路板之製作不須使用鈀金屬觸媒。其中,介面層係由多胺類高分子所形成,而可提供較多之胺基,進而有助於提升介面層與導電材料之反應鍵結,因此可提升導電層的導電性,並降低其表面粗糙度,而有助於金屬層的沉積。另外,導電層之表面可設有奈米金屬顆粒,而進一步提升導電層之導電性,進而提升電鍍效能,並提升軟性電路板之性質。The flexible circuit board and the manufacturing method thereof of the present invention can improve the bonding between the conductive layer and the polyimide substrate by setting an interface layer between the conductive layer and the polyimide substrate and making the interface layer form a covalent bond with the conductive layer and the polyimide substrate at the same time, and further, the conductive layer can replace the electroless plating layer of the general chemical plating, so the manufacturing of the flexible circuit board of the present invention does not need to use a palladium metal catalyst. Among them, the interface layer is formed by a polyamine polymer, which can provide more amino groups, and further help to improve the reactive bonding between the interface layer and the conductive material, so that the conductivity of the conductive layer can be improved, and its surface roughness can be reduced, which is conducive to the deposition of the metal layer. In addition, the surface of the conductive layer may be provided with nano-metal particles to further enhance the conductivity of the conductive layer, thereby enhancing the electroplating performance and improving the properties of the flexible circuit board.

以下仔細討論本發明實施例之製造和使用。然而,可以理解的是,實施例提供許多可應用的發明概念,其可實施於各式各樣的特定內容中。所討論之特定實施例僅供說明,並非用以限定本發明之範圍。The making and using of embodiments of the present invention are discussed in detail below. However, it will be appreciated that the embodiments provide many applicable inventive concepts that can be implemented in a wide variety of specific contexts. The specific embodiments discussed are for illustration only and are not intended to limit the scope of the present invention.

請參照圖1A,其係繪示依照本發明之一些實施例之軟性電路板的側視示意圖。軟性電路板100包含聚醯亞胺基材110、介面層120、導電層130與金屬層140。其中,介面層120係設置於聚醯亞胺基材110和導電層130的表面131之間,且金屬層140設置於導電層130之表面133上。本發明之聚醯亞胺基材110的材料沒有特別之限制,其可為一般用以作為軟性電路板之基材的聚醯亞胺。在一些具體例中,聚醯亞胺基材110可例如為聚醯亞胺薄膜。Please refer to FIG. 1A, which is a schematic side view of a flexible circuit board according to some embodiments of the present invention. The flexible circuit board 100 includes a polyimide substrate 110, an interface layer 120, a conductive layer 130, and a metal layer 140. The interface layer 120 is disposed between the polyimide substrate 110 and the surface 131 of the conductive layer 130, and the metal layer 140 is disposed on the surface 133 of the conductive layer 130. The material of the polyimide substrate 110 of the present invention is not particularly limited, and it can be a polyimide generally used as a substrate of a flexible circuit board. In some specific examples, the polyimide substrate 110 can be, for example, a polyimide film.

介面層120係由多胺類高分子所形成,其中多胺類高分子係藉由共價鍵來接枝於聚醯亞胺基材110之表面。其結合方式係先對聚醯亞胺基材110進行表面處理製程,以使聚醯亞胺基材110之表面具有親水性官能基,再進一步對此些親水性官能基與多胺類高分子進行反應,以形成兩者間之共價鍵。The interface layer 120 is formed of polyamine polymers, wherein the polyamine polymers are grafted onto the surface of the polyimide substrate 110 via covalent bonds. The bonding method is to first perform a surface treatment process on the polyimide substrate 110 so that the surface of the polyimide substrate 110 has hydrophilic functional groups, and then further react these hydrophilic functional groups with the polyamine polymers to form a covalent bond between the two.

在一些實施例中,表面處理製程包含將聚醯亞胺薄膜浸泡於鹼性溶液中,以使聚醯亞胺的醯亞胺環開環,而可進一步藉由所添加之酸性溶液進行離子交換,以形成親水性官能基(如:-COOH)。在一些具體例中,鹼性溶液可包含氫氧化鉀、其他適當之鹼性溶液,或上述溶液之任意混合,而酸性溶液沒有特別之限制,其僅須可進行離子交換,且不侵蝕聚醯亞胺薄膜即可。舉例而言,酸性溶液可包含氯化氫及/或其他適當之酸性溶液。在一些具體例中,為降低鹼性溶液對聚醯亞胺薄膜的侵蝕,鹼性溶液之濃度可例如為5M。在此些具體例中,聚醯亞胺薄膜於鹼性溶液之浸泡時間可為大於0分鐘且小於或等於10分鐘,較佳為1分鐘至7分鐘,且更佳可為3分鐘至6分鐘。當聚醯亞胺薄膜之浸泡時間為前述範圍時,表面處理後之聚醯亞胺薄膜的表面可具有適量之親水性官能基,而具有較佳之親水性,薄膜表面不會被鹼性溶液侵蝕。在一些例子中,前述表面處理製程之反應機制可如流程(a)所示。於流程(a)中,Ar代表衍生自四羧酸二酐化合物的四價基團,而R代表衍生自二胺化合物的二價基團,其中四羧酸二酐化合物與二胺化合物係具有通常知識者所熟知之材料。 (a) In some embodiments, the surface treatment process includes immersing the polyimide film in an alkaline solution to open the imide ring of the polyimide, and further ion exchange can be performed by the added acidic solution to form a hydrophilic functional group (such as -COOH). In some specific examples, the alkaline solution can include potassium hydroxide, other appropriate alkaline solutions, or any mixture of the above solutions, and the acidic solution has no particular limitation, it only needs to be able to perform ion exchange and not corrode the polyimide film. For example, the acidic solution can include hydrogen chloride and/or other appropriate acidic solutions. In some specific examples, in order to reduce the corrosion of the alkaline solution on the polyimide film, the concentration of the alkaline solution can be, for example, 5M. In these specific examples, the immersion time of the polyimide film in the alkaline solution can be greater than 0 minutes and less than or equal to 10 minutes, preferably 1 minute to 7 minutes, and more preferably 3 minutes to 6 minutes. When the immersion time of the polyimide film is within the aforementioned range, the surface of the polyimide film after surface treatment can have an appropriate amount of hydrophilic functional groups and has better hydrophilicity, and the surface of the film will not be corroded by the alkaline solution. In some examples, the reaction mechanism of the aforementioned surface treatment process can be shown as process (a). In process (a), Ar represents a tetravalent group derived from a tetracarboxylic dianhydride compound, and R represents a divalent group derived from a diamine compound, wherein the tetracarboxylic dianhydride compound and the diamine compound are materials well known to those of ordinary skill. (a)

於進行表面處理製程後,對親水性官能基與多胺類高分子進行反應,以形成兩者間之共價鍵。本發明所使用之多胺類高分子沒有特別之限制,其僅須具有多個可與親水性官能基反應之胺基(-NH 2)即可。在一些實施例中,本發明之多胺類高分子可具有至少3個胺基。較佳地,多胺類高分子可具有至少50個胺基。在其他實施例中,多胺類高分子之分子量係大於1000 g/mole。舉例而言,本發明之多胺類高分子可包含但不限於聚乙烯亞胺、其他適當之多胺類高分子,或上述材料之任意混合。在此些實施例中,多胺類高分子之一個胺基可與親水性官能基反應,並形成共價鍵,而其餘之胺基未參與反應,且此些剩餘之胺基不與另一聚醯亞胺高分子鏈的親水性官能基反應。 After the surface treatment process, the hydrophilic functional group and the polyamine polymer are reacted to form a covalent bond between the two. The polyamine polymer used in the present invention is not particularly limited, and it only needs to have a plurality of amine groups ( -NH2 ) that can react with the hydrophilic functional group. In some embodiments, the polyamine polymer of the present invention may have at least 3 amine groups. Preferably, the polyamine polymer may have at least 50 amine groups. In other embodiments, the molecular weight of the polyamine polymer is greater than 1000 g/mole. For example, the polyamine polymer of the present invention may include but is not limited to polyethyleneimine, other appropriate polyamine polymers, or any mixture of the above materials. In these embodiments, one amine group of the polyamine polymer can react with the hydrophilic functional group to form a covalent bond, while the remaining amine groups do not participate in the reaction, and these remaining amine groups do not react with the hydrophilic functional group of another polyimide polymer chain.

導電層130之材料可包含石墨烯材料,且具有可與介面層120之表面胺基(-NH 2)反應的官能基。在一些具體例中,導電層130之材料包含氧化石墨烯、其他適當之導電材料,或上述材料之任意混合。 The material of the conductive layer 130 may include graphene material and have functional groups that can react with surface amine groups (—NH 2 ) of the interface layer 120. In some specific examples, the material of the conductive layer 130 includes graphene oxide, other appropriate conductive materials, or any mixture of the above materials.

導電層130之形成係藉由對介面層120表面之胺基與前述之導電材料進行結合反應。其中,導電層130係藉由導電材料與介面層120之表面胺基間的共價鍵來結合。在一些實施例中,為了進一步提升導電材料對於介面層120之覆蓋率,結合反應可進行複數次。據此,介面層120之表面胺基均與導電材料反應鍵結,而可提升導電層130之連續性。在其它實施例中,結合反應可進行複數次,且於進行每一次結合反應前,額外加入多胺類高分子,以使其與前一次結合反應所使用之導電材料的表面基團反應鍵結,而形成由多個子層所堆疊構成之導電層130(即導電層130係由多胺類高分子與導電材料交替堆疊而成)。其中,此額外加入之多胺類高分子可相同或不同於介面層120所使用之多胺類高分子。較佳地,此額外加入之多胺類高分子係相同於介面層120的多胺類高分子。The formation of the conductive layer 130 is carried out by reacting the amino groups on the surface of the interface layer 120 with the aforementioned conductive material. The conductive layer 130 is bonded by covalent bonds between the conductive material and the surface amino groups of the interface layer 120. In some embodiments, in order to further improve the coverage of the conductive material on the interface layer 120, the bonding reaction can be performed multiple times. Accordingly, the surface amino groups of the interface layer 120 react and bond with the conductive material, and the continuity of the conductive layer 130 can be improved. In other embodiments, the bonding reaction may be performed multiple times, and before each bonding reaction, an additional polyamine polymer is added to react and bond with the surface groups of the conductive material used in the previous bonding reaction to form a conductive layer 130 composed of multiple stacked sublayers (i.e., the conductive layer 130 is formed by alternately stacking polyamine polymers and conductive materials). The additionally added polyamine polymer may be the same as or different from the polyamine polymer used in the interface layer 120. Preferably, the additionally added polyamine polymer is the same as the polyamine polymer of the interface layer 120.

在一些實施例中,為了提升導電層130之材料與介面層120的表面胺基之反應性,於進行結合反應前,先對導電原料材進行分散步驟,以獲得導電材料。舉例而言,分散步驟係對石墨烯原料施加超音波,以使其分散為粒徑更小且分布範圍較窄之石墨烯材料,而有助於結合反應之進行。在此些例子中,石墨烯材料之粒徑範圍可為400 nm至600 nm。In some embodiments, in order to enhance the reactivity of the material of the conductive layer 130 and the surface amino groups of the interface layer 120, before the bonding reaction, the conductive raw material is subjected to a distribution step to obtain the conductive material. For example, the distribution step is to apply ultrasound to the graphene raw material to disperse it into graphene materials with smaller particle sizes and narrower distribution ranges, which is conducive to the bonding reaction. In these examples, the particle size range of the graphene material can be 400 nm to 600 nm.

在一些實施例中,於形成導電層130後,可進一步進行還原反應,以提升導電層130之導電性。舉例而言,當導電層130係由氧化石墨烯所形成時,所形成之導電層130的表面易具有環氧官能基,故藉由對導電層130進行還原反應,可使其恢復為具有良好二維結構之石墨烯材料。In some embodiments, after the conductive layer 130 is formed, a reduction reaction may be further performed to improve the conductivity of the conductive layer 130. For example, when the conductive layer 130 is formed of graphene oxide, the surface of the formed conductive layer 130 is likely to have epoxy functional groups, so by performing a reduction reaction on the conductive layer 130, it can be restored to a graphene material with a good two-dimensional structure.

金屬層140之形成係藉由浸泡前述導電層130的表面133於含有金屬離子的溶液中,以利用電鍍之方式來沉積金屬層140於表面133上。在一些實施例中,金屬層140之材料可例如為銅及/或其他適當之金屬材料。The metal layer 140 is formed by immersing the surface 133 of the conductive layer 130 in a solution containing metal ions to deposit the metal layer 140 on the surface 133 by electroplating. In some embodiments, the material of the metal layer 140 may be copper and/or other appropriate metal materials.

在一些實施例中,為提升電鍍之效能,導電層130之表面133可具有奈米金屬顆粒。如圖1B所示,奈米金屬顆粒141係分布於表面133上,且金屬層140係覆蓋於奈米金屬顆粒141和導電層130上。當導電層130之表面133具有奈米金屬顆粒141時,表面133之導電性可被進一步提升,而有助於金屬材料的鍍覆。另外,奈米金屬顆粒141亦有助於提升軟性電路板100之導電性。在一些具體例中,奈米金屬顆粒141可藉由將表面133浸泡於含有金屬離子之溶液中,以藉由還原反應來形成奈米金屬顆粒141。可理解的,奈米金屬顆粒141之材料係不同於前述金屬層140之材料。奈米金屬顆粒141之材料沒有特別之限制,其僅須可進一步提升導電層130之導電性,且不影響金屬層140之形成即可。在一些實施例中,奈米金屬顆粒141之材料可包含但不限於銀及/或其他適當之金屬材料。In some embodiments, in order to improve the performance of electroplating, the surface 133 of the conductive layer 130 may have nanometal particles. As shown in FIG. 1B , the nanometal particles 141 are distributed on the surface 133, and the metal layer 140 covers the nanometal particles 141 and the conductive layer 130. When the surface 133 of the conductive layer 130 has the nanometal particles 141, the conductivity of the surface 133 can be further improved, which is helpful for the plating of the metal material. In addition, the nanometal particles 141 also help to improve the conductivity of the flexible circuit board 100. In some specific examples, the nanometal particles 141 can be formed by immersing the surface 133 in a solution containing metal ions to form the nanometal particles 141 through a reduction reaction. It is understandable that the material of the nanometal particles 141 is different from the material of the aforementioned metal layer 140. The material of the nanometal particles 141 is not particularly limited, and it only needs to further improve the conductivity of the conductive layer 130 and not affect the formation of the metal layer 140. In some embodiments, the material of the nanometal particles 141 may include but is not limited to silver and/or other appropriate metal materials.

於前述形成本發明之金屬層140與奈米金屬顆粒141的操作中,其均不須使用鈀金屬觸媒,且可不使用習知化學鍍液中之螯合劑與穩定劑,故可有效降低軟性電路板100之製作成本,並避免環境汙染。In the aforementioned operation of forming the metal layer 140 and the nano-metal particles 141 of the present invention, no palladium metal catalyst is required, and no chelating agent and stabilizer in the conventional chemical plating solution are required, so the manufacturing cost of the flexible circuit board 100 can be effectively reduced and environmental pollution can be avoided.

於本發明之軟性電路板100中,多胺類高分子所形成之介面層120可提供較多的胺基,而有助於更多導電材料的反應鍵結,進而提升導電層130的導電性,並改善導電層130的表面粗糙度,故金屬層140可具有更佳之沉積結果,以提升軟性電路板100的特性。In the flexible circuit board 100 of the present invention, the interface layer 120 formed by the polyamine polymer can provide more amine groups, which is conducive to the reaction bonding of more conductive materials, thereby improving the conductivity of the conductive layer 130 and improving the surface roughness of the conductive layer 130. Therefore, the metal layer 140 can have a better deposition result to improve the characteristics of the flexible circuit board 100.

在一些應用例中,本發明所製得之軟性電路板具有較低的製作成本,且具有良好之導電性。其次,藉由多胺類高分子所形成之介面層120可與聚醯亞胺基材110和導電層130形成良好的化學鍵結,而有助於提升各層之結合性。In some application examples, the flexible circuit board produced by the present invention has a relatively low production cost and good electrical conductivity. Secondly, the interface layer 120 formed by the polyamine polymer can form a good chemical bond with the polyimide substrate 110 and the conductive layer 130, which helps to improve the bonding of each layer.

以下利用實施例以說明本發明之應用,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾。The following embodiments are used to illustrate the application of the present invention, but they are not used to limit the present invention. Anyone skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention.

製備軟性電路板Preparation of flexible circuit boards

製備例1Preparation Example 1

將聚醯亞胺薄膜先浸泡於乙醇中清洗,再將其浸泡於室溫(如:10℃至35℃)且濃度為5M之氫氧化鉀水溶液中。經過3至6分鐘後,以去離子水清洗,並將聚醯亞胺薄膜浸泡於室溫且濃度為0.2M的氯化氫水溶液中。經過5分鐘後,以去離子水清洗,並以氮氣吹乾。接著,將表面處理後之聚醯亞胺薄膜置入水中,並加入N-(3-dimethyl aminopropyl)-N-ethylcarbodiimide(以下簡稱為EDC)進行反應。於反應10分鐘後,加入N-hydroxy succinimide(以下簡稱為NHS)進行反應。反應30分鐘後,於室溫加入已預先交聯之聚乙烯亞胺,即可反應獲得胺化之聚醯亞胺薄膜。以乙醇洗淨,並乾燥後,即可形成介面層於聚醯亞胺薄膜上。The polyimide film is first soaked in ethanol for cleaning, and then soaked in a 5M potassium hydroxide aqueous solution at room temperature (e.g., 10°C to 35°C). After 3 to 6 minutes, it is washed with deionized water, and the polyimide film is soaked in a 0.2M hydrogen chloride aqueous solution at room temperature. After 5 minutes, it is washed with deionized water and blown dry with nitrogen. Then, the surface-treated polyimide film is placed in water, and N-(3-dimethyl aminopropyl)-N-ethylcarbodiimide (hereinafter referred to as EDC) is added for reaction. After 10 minutes of reaction, N-hydroxy succinimide (hereinafter referred to as NHS) is added for reaction. After reacting for 30 minutes, add pre-crosslinked polyethyleneimine at room temperature to obtain an aminated polyimide film. After washing with ethanol and drying, an interface layer can be formed on the polyimide film.

接著,將氧化石墨烯分散於水溶液中,並加入EDC進行反應。反應10分鐘後,加入NHS進行反應。反應30分鐘後,將胺化之聚醯亞胺薄膜浸泡於室溫之溶液中,即可獲得已接枝氧化石墨烯之聚醯亞胺薄膜。於120℃烘烤1小時後,即完成第一層氧化石墨烯之接枝。重複進行多次,即可使聚醯亞胺薄膜之表面完全被氧化石墨烯所覆蓋。當結合反應之總次數為四次時,氧化石墨烯之表面粗糙度係由91.3 nm,依序遞減至62.3 nm與43.3 nm,且最終為10.7 nm。之後,將接枝氧化石墨烯之聚醯亞胺薄膜浸泡於還原劑溶液中,於90℃浸泡2小時後,即可製得製備例1之導電層。Next, graphene oxide is dispersed in an aqueous solution and EDC is added for reaction. After 10 minutes of reaction, NHS is added for reaction. After 30 minutes of reaction, the aminated polyimide film is immersed in a solution at room temperature to obtain a polyimide film grafted with graphene oxide. After baking at 120°C for 1 hour, the grafting of the first layer of graphene oxide is completed. Repeating this process several times will allow the surface of the polyimide film to be completely covered with graphene oxide. When the total number of bonding reactions is four, the surface roughness of graphene oxide decreases from 91.3 nm to 62.3 nm and 43.3 nm, respectively, and finally to 10.7 nm. Afterwards, the polyimide film grafted with graphene oxide is immersed in a reducing agent solution at 90° C. for 2 hours to obtain the conductive layer of Preparation Example 1.

然後,將硝酸銀加入水中,並將具有導電層之聚醯亞胺薄膜浸泡於其中,且加入NaBH 4,以使奈米銀還原於導電層上。反應完成後,以大量水清洗,即可形成奈米銀粒子於導電層之表面。 Then, silver nitrate is added to water, and the polyimide film with a conductive layer is immersed in it, and NaBH 4 is added to reduce the nanosilver on the conductive layer. After the reaction is completed, it is washed with a large amount of water to form nanosilver particles on the surface of the conductive layer.

於哈林試驗槽中倒入基礎電鍍液,並加入電鍍用添加劑。然後,將磷銅陽極插入哈林試驗槽,且立即將前述所獲得之聚醯亞胺薄膜插入哈林試驗槽中,並使欲鍍面和磷銅陽極相互面對。電鍍製程所使用之直流電電源供應器係輸入0.219 A之定電流,即可形成電鍍銅層於導電層上。進一步乾燥後,即可製得製備例1之軟性電路板。製備例1所製得之導電層的導電性如第1表所示,其中4GO代表用以形成導電層之結合反應進行四次;RGO代表氧化石墨烯還原後之導電層;而Ag5與Ag30分別代表奈米銀粒子之還原時間為5分鐘與30分鐘。Pour the base electroplating solution into the Haring test tank and add the electroplating additive. Then, insert the phosphorus copper anode into the Haring test tank, and immediately insert the polyimide film obtained above into the Haring test tank, and make the surface to be plated and the phosphorus copper anode face each other. The DC power supply used in the electroplating process inputs a constant current of 0.219 A to form an electroplated copper layer on the conductive layer. After further drying, the flexible circuit board of Preparation Example 1 can be obtained. The conductivity of the conductive layer prepared in Preparation Example 1 is shown in Table 1, where 4GO represents that the bonding reaction used to form the conductive layer is performed four times; RGO represents the conductive layer after graphene oxide reduction; and Ag5 and Ag30 represent that the reduction time of the nanosilver particles is 5 minutes and 30 minutes respectively.

製備例2Preparation Example 2

製備例2係使用與製備例1之軟性電路板的製作方法相同之製備方法,不同之處在於製備例2係使用乙二胺來取代聚乙烯亞胺,以反應獲得胺化之聚醯亞胺薄膜,且結合反應之總次數為六次(氧化石墨烯之表面粗糙度遞減順序為96.0 nm、68.1 nm、52.5 nm、44.2 nm、39.4 nm與34.9 nm)。製備例2所製得之導電層的導電性如第1表所示,其中6GO代表結合反應進行六次;而RGO、Ag5和Ag30之定義如前所述,在此不另贅述。Preparation Example 2 uses the same preparation method as the preparation method of the flexible circuit board in Preparation Example 1, except that in Preparation Example 2, ethylenediamine is used to replace polyethyleneimine to obtain an aminated polyimide film, and the total number of bonding reactions is six times (the surface roughness of graphene oxide is in descending order of 96.0 nm, 68.1 nm, 52.5 nm, 44.2 nm, 39.4 nm and 34.9 nm). The conductivity of the conductive layer obtained in Preparation Example 2 is shown in Table 1, where 6GO represents six bonding reactions; and the definitions of RGO, Ag5 and Ag30 are as described above and are not further described here.

如第1表所示,製備例1與製備例2之導電層均具有良好的導電性,且藉由奈米銀粒子之設置與其還原反應之時間的增加,製備例1與製備例2之導電層的導電性均有所提升。As shown in Table 1, the conductive layers of Preparation Example 1 and Preparation Example 2 both have good conductivity, and the conductivity of the conductive layers of Preparation Example 1 and Preparation Example 2 is improved by the placement of the silver nanoparticles and the increase of the reduction reaction time.

請參照圖2A至圖2D,其分別係顯示本案之製備例1與製備例2之導電層的掃描式電子顯微鏡照片,其中圖2A與圖2B分別係顯示製備例1進行結合反應前之介面層和結合反應進行四次後之導電層,而圖2C與圖2D分別係顯示製備例2進行結合反應前之介面層和結合反應進行六次後之導電層。由於製備例1係使用聚乙烯亞胺來形成介面層,故具有較多之胺基,而有助於在每一次結合反應時,更多之氧化石墨烯可鍵結於介面層上。因此,相較於製備例2,製備例1僅須進行四次結合反應即可形成連續之導電層。另外,圖2B之製備例1的氧化石墨烯層之厚度為6.75 μm,而圖2D之製備例2的氧化石墨烯層之厚度為3.33 μm。Please refer to FIG. 2A to FIG. 2D, which respectively show scanning electron microscope photos of the conductive layer of Preparation Example 1 and Preparation Example 2 of the present case, wherein FIG. 2A and FIG. 2B respectively show the interface layer before the bonding reaction and the conductive layer after the bonding reaction is performed four times in Preparation Example 1, and FIG. 2C and FIG. 2D respectively show the interface layer before the bonding reaction and the conductive layer after the bonding reaction is performed six times in Preparation Example 2. Since Preparation Example 1 uses polyethyleneimine to form the interface layer, it has more amine groups, which helps more graphene oxide to bond to the interface layer during each bonding reaction. Therefore, compared with Preparation Example 2, Preparation Example 1 only needs to perform four bonding reactions to form a continuous conductive layer. In addition, the thickness of the graphene oxide layer of Preparation Example 1 in FIG. 2B is 6.75 μm, and the thickness of the graphene oxide layer of Preparation Example 2 in FIG. 2D is 3.33 μm.

請參照圖3A至圖3D,其分別係顯示本案之製備例1之金屬層的掃描式電子顯微鏡照片。圖3A與圖3B係直接電鍍銅於導電層之表面,而圖3C與圖3D之導電層表面設有奈米銀粒子,且銅金屬層係電鍍於其上,其中圖3C與圖3D之奈米銀粒子的還原時間分別為5分鐘與30分鐘。圖3A、圖3C與圖3D之電流密度為0.729 A,而圖3B之電流密度為0.129 A。Please refer to FIG. 3A to FIG. 3D, which are scanning electron microscope photos of the metal layer of the preparation example 1 of the present case. FIG. 3A and FIG. 3B are copper directly electroplated on the surface of the conductive layer, while FIG. 3C and FIG. 3D have nanosilver particles on the surface of the conductive layer and the copper metal layer electroplated thereon, wherein the reduction time of the nanosilver particles in FIG. 3C and FIG. 3D is 5 minutes and 30 minutes respectively. The current density of FIG. 3A, FIG. 3C and FIG. 3D is 0.729 A, while the current density of FIG. 3B is 0.129 A.

於圖3A與圖3B中,由於聚乙烯亞胺之介面層可降低導電層的粗糙度,故在高電流密度(0.729 A)下,銅晶粒具有柱狀形成之趨勢。隨著電流密度之降低,銅金屬層之晶粒更加緻密,且銅粒空隙係逐漸縮小。於圖3C與圖3D中,藉由奈米銀粒子之設置,導電層之導電度亦隨之提升,而有助於電鍍銅晶粒的增長。In Figures 3A and 3B, since the polyethyleneimine interface layer can reduce the roughness of the conductive layer, the copper grains have a tendency to form columns under high current density (0.729 A). As the current density decreases, the grains of the copper metal layer become more dense, and the gaps between the copper grains gradually shrink. In Figures 3C and 3D, the conductivity of the conductive layer is also improved by the placement of nanosilver particles, which helps the growth of electroplated copper grains.

請參照圖4A至圖4D,其分別係顯示本案之製備例2之金屬層的掃描式電子顯微鏡照片。圖4A與圖4B係直接電鍍銅於導電層之表面,而圖4C與圖4D之導電層表面設有奈米銀粒子,且銅金屬層係電鍍於其上,其中圖4C與圖4D之奈米銀粒子的還原時間分別為5分鐘與30分鐘。圖4A、圖4C與圖4D之電流密度為0.729 A,而圖4B之電流密度為0.129 A。Please refer to FIG. 4A to FIG. 4D, which are scanning electron microscope photos of the metal layer of Preparation Example 2 of this case. FIG. 4A and FIG. 4B are copper directly electroplated on the surface of the conductive layer, while FIG. 4C and FIG. 4D have nanosilver particles on the surface of the conductive layer and the copper metal layer electroplated thereon, wherein the reduction time of the nanosilver particles in FIG. 4C and FIG. 4D is 5 minutes and 30 minutes respectively. The current density of FIG. 4A, FIG. 4C and FIG. 4D is 0.729 A, while the current density of FIG. 4B is 0.129 A.

相較於圖3A,由於製備例2係使用乙二胺來形成介面層,故其所形成之導電層的導電度較低,而導致電鍍時表面之電流密度不均,進而使圖4A中之導電層表面未完全被電鍍銅所覆蓋。於圖4B中,雖然電鍍銅之表面粗糙度已大幅下降,但其銅晶粒間仍具有空隙。於圖4C與圖4D中,藉由奈米銀粒子之設置,且隨其還原時間之增加,電鍍銅之銅晶柱越趨緻密,其中圖4D中之銅晶粒空隙已不存在。Compared to FIG3A, since preparation example 2 uses ethylenediamine to form the interface layer, the conductivity of the conductive layer formed is lower, resulting in uneven current density on the surface during electroplating, and thus the surface of the conductive layer in FIG4A is not completely covered by electroplated copper. In FIG4B, although the surface roughness of the electroplated copper has been greatly reduced, there are still gaps between the copper grains. In FIG4C and FIG4D, by setting up nanosilver particles and increasing the reduction time, the copper crystal columns of the electroplated copper become more dense, and the copper grain gaps in FIG4D no longer exist.

請參照圖5A至圖5D,其分別顯示本案之製備例1之金屬層的光學顯微鏡照片。圖5A、圖5C與圖5D之電流密度為0.729 A,而圖5B之電流密度為0.129 A。隨著電流密度之降低,電鍍銅表面之緻密度係提升,且藉由奈米銀粒子之設置,導電層之導電性係被提升,而有助於電鍍銅之沉積。於圖5B與圖5D中,較低之電流密度所獲得之電鍍銅的沉積結果已相近於還原30分鐘奈米銀粒子之電鍍銅的沉積結果,故導電層之表面粗糙度將影響電鍍銅之沉積形貌。Please refer to Figures 5A to 5D, which respectively show the optical microscope photos of the metal layer of Preparation Example 1 of the present case. The current density of Figures 5A, 5C and 5D is 0.729 A, while the current density of Figure 5B is 0.129 A. As the current density decreases, the density of the electroplated copper surface is improved, and the conductivity of the conductive layer is improved by the arrangement of the nanosilver particles, which is conducive to the deposition of the electroplated copper. In Figures 5B and 5D, the deposition results of the electroplated copper obtained by the lower current density are close to the deposition results of the electroplated copper with the nanosilver particles reduced for 30 minutes, so the surface roughness of the conductive layer will affect the deposition morphology of the electroplated copper.

據此,本發明之軟性電路板與其製作方法可藉由介面層之設置,而利用介面層之共價鍵結,使導電層良好地形成於聚醯亞胺基材上,進而可排除化學電鍍製程之進行,故本發明之製作方法不須使用鈀觸媒。其中,介面層可由多胺類高分子所形成,而有助於提升介面層和導電材料的反應鍵結,進而提升導電層的導電性,且可提升金屬層的沉積結果,故可獲得較佳之表面品質。再者,導電層之表面可具有奈米金屬顆粒,而進一步導電層之導電性,進而有助於提升電鍍之效能與所製得之軟性電路板的性質。另外,本發明軟性電路板中之各層均具有良好之結合性,故具有良好之拉力強度。Accordingly, the flexible circuit board and its manufacturing method of the present invention can form a conductive layer well on the polyimide substrate by using the covalent bonding of the interface layer through the provision of the interface layer, thereby eliminating the need for a chemical plating process, so the manufacturing method of the present invention does not need to use a palladium catalyst. Among them, the interface layer can be formed by a polyamine polymer, which helps to improve the reactive bonding between the interface layer and the conductive material, thereby improving the conductivity of the conductive layer, and can improve the deposition result of the metal layer, so that better surface quality can be obtained. Furthermore, the surface of the conductive layer can have nanometal particles, which further improves the conductivity of the conductive layer, thereby helping to improve the performance of electroplating and the properties of the flexible circuit board obtained. In addition, each layer in the flexible circuit board of the present invention has good bonding properties and therefore has good tensile strength.

雖然本發明已以實施方式揭露如上,然其並非用以限定本發明,在本發明所屬技術領域中任何具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field to which the present invention belongs can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be defined by the scope of the attached patent application.

100:軟性電路板 110:聚醯亞胺基材 120:介面層 130:導電層 131,133:表面 140:金屬層 141:奈米金屬顆粒 A:區域 100: Flexible circuit board 110: Polyimide substrate 120: Interface layer 130: Conductive layer 131,133: Surface 140: Metal layer 141: Nanometal particles A: Region

為了對本發明之實施例及其優點有更完整之理解,現請參照以下之說明並配合相應之圖式。必須強調的是,各種特徵並非依比例描繪且僅係為了圖解目的。相關圖式內容說明如下: 圖1A係繪示依照本發明之一些實施例之軟性電路板的側視示意圖。 圖1B係繪示圖1A之區域A的放大圖。 圖2A至圖2D分別係顯示本案之製備例1與製備例2之導電層的掃描式電子顯微鏡照片。 圖3A與圖3B及圖4A與圖4B分別係顯示本案之製備例1及製備例2之金屬層的掃描式電子顯微鏡照片。 圖3C與圖3D及圖4C與圖4D分別係顯示本案之製備例1及製備例2之金屬層的掃描式電子顯微鏡照片,其中導電層之表面設有奈米銀粒子。 圖5A至圖5D分別係顯示本案之製備例1之金屬層的光學顯微鏡照片。 In order to have a more complete understanding of the embodiments of the present invention and its advantages, please refer to the following description and the corresponding drawings. It must be emphasized that the various features are not drawn to scale and are only for illustration purposes. The contents of the relevant drawings are described as follows: FIG. 1A is a schematic side view of a flexible circuit board according to some embodiments of the present invention. FIG. 1B is an enlarged view of area A of FIG. 1A. FIG. 2A to FIG. 2D are scanning electron microscope photos of the conductive layer of Preparation Example 1 and Preparation Example 2 of the present case, respectively. FIG. 3A and FIG. 3B and FIG. 4A and FIG. 4B are scanning electron microscope photos of the metal layer of Preparation Example 1 and Preparation Example 2 of the present case, respectively. Figures 3C and 3D and Figures 4C and 4D respectively show scanning electron microscope photographs of the metal layer of Preparation Example 1 and Preparation Example 2 of this case, wherein nanosilver particles are provided on the surface of the conductive layer. Figures 5A to 5D respectively show optical microscope photographs of the metal layer of Preparation Example 1 of this case.

國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無 Domestic storage information (please note in the order of storage institution, date, and number) None Foreign storage information (please note in the order of storage country, institution, date, and number) None

100:軟性電路板 100: Flexible circuit board

110:聚醯亞胺基材 110: Polyimide substrate

120:介面層 120: Interface layer

130:導電層 130: Conductive layer

131,133:表面 131,133:Surface

140:金屬層 140:Metal layer

A:區域 A: Area

Claims (7)

一種軟性電路板,包含:一聚醯亞胺基材;一介面層,其中該介面層之一材料包含一第一多胺類高分子;一導電層,其中該介面層係藉由共價鍵結來設置於該聚醯亞胺基材與該導電層之一第一表面之間,且該導電層包含:複數個導電子層,其中該介面層係藉由共價鍵結來設置於該聚醯亞胺基材與該些導電子層的一者之間;以及至少一介面子層,其中該至少一介面子層之每一者係藉由共價鍵結來設置於該些導電子層的相鄰二者之間,且該至少一介面子層之一材料包含一第二多胺類高分子;以及一金屬層,設置於該導電層之一第二表面上。 A flexible circuit board comprises: a polyimide substrate; an interface layer, wherein a material of the interface layer comprises a first polyamine polymer; a conductive layer, wherein the interface layer is disposed between the polyimide substrate and a first surface of the conductive layer by covalent bonding, and the conductive layer comprises: a plurality of conductive sublayers, wherein the interface layer is disposed between the polyimide substrate and a first surface of the conductive layer by covalent bonding. disposed between the polyimide substrate and one of the conductive sublayers; and at least one interface sublayer, wherein each of the at least one interface sublayer is disposed between two adjacent conductive sublayers by covalent bonding, and a material of the at least one interface sublayer comprises a second polyamine polymer; and a metal layer disposed on a second surface of the conductive layer. 如請求項1所述之軟性電路板,其中該導電層包含一石墨烯材料。 A flexible circuit board as described in claim 1, wherein the conductive layer comprises a graphene material. 如請求項1所述之軟性電路板,其中該金屬層包含:一奈米金屬顆粒,分布於該第二表面上;以及一電鍍金屬層,設置於該第二表面上。 A flexible circuit board as described in claim 1, wherein the metal layer comprises: a nanometal particle distributed on the second surface; and an electroplated metal layer disposed on the second surface. 一種軟性電路板的製作方法,包含:對一聚醯亞胺基材之一表面進行一表面處理製程,以使該表面具有親水性官能基;對該親水性官能基與一第一多胺類高分子進行一反應,以形成一介面層,其中該介面層係以一第一共價鍵與該聚醯亞胺基材結合;對該介面層與一導電材料進行一結合反應,以形成一導電層於該介面層上,其中該導電層係以一第二共價鍵與該介面層結合;以及形成一金屬層於該導電層上;其中,該結合反應係進行複數次,且於進行每一次之該結合反應前,該製作方法更包含添加一第二多胺類高分子,以使該第二多胺類高分子與該導電材料共價結合。 A method for manufacturing a flexible circuit board includes: performing a surface treatment process on a surface of a polyimide substrate to make the surface have a hydrophilic functional group; performing a reaction on the hydrophilic functional group and a first polyamine polymer to form an interface layer, wherein the interface layer is bonded to the polyimide substrate by a first covalent bond; performing a bonding reaction on the interface layer and a conductive material to form a conductive layer on the interface layer, wherein the conductive layer is bonded to the interface layer by a second covalent bond; and forming a metal layer on the conductive layer; wherein the bonding reaction is performed multiple times, and before each bonding reaction, the manufacturing method further includes adding a second polyamine polymer to covalently bond the second polyamine polymer to the conductive material. 如請求項4所述之軟性電路板的製作方法,其中該導電層包含一石墨烯材料,且於進行該結合反應前,該製作方法更包含:對一石墨烯原料進行一分散步驟,以獲得該石墨烯材料。 The method for manufacturing a flexible circuit board as described in claim 4, wherein the conductive layer comprises a graphene material, and before the bonding reaction, the method further comprises: performing a stepwise process on a graphene raw material to obtain the graphene material. 如請求項5所述之軟性電路板的製作方法,其中於形成該金屬層前,該製作方法更包含:對該導電層進行一還原反應。 The method for manufacturing a flexible circuit board as described in claim 5, wherein before forming the metal layer, the method further comprises: performing a reduction reaction on the conductive layer. 如請求項4所述之軟性電路板的製作方法,其中該形成該金屬層之操作包含:形成複數個奈米金屬顆粒於該導電層上;以及形成一電鍍金屬層於該導電層上,其中該些奈米金屬顆粒分布於該電鍍金屬層與該導電層之間。 The method for manufacturing a flexible circuit board as described in claim 4, wherein the operation of forming the metal layer includes: forming a plurality of nanometal particles on the conductive layer; and forming an electroplated metal layer on the conductive layer, wherein the nanometal particles are distributed between the electroplated metal layer and the conductive layer.
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Publication number Priority date Publication date Assignee Title
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104661818A (en) 2012-09-28 2015-05-27 Dic株式会社 Laminate, electroconductive pattern, and electric circuit

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