TWI834968B - Micro-electro-mechanical system acoustic sensor, micro-electro-mechanical system package structure and method for manufacturing the same - Google Patents

Micro-electro-mechanical system acoustic sensor, micro-electro-mechanical system package structure and method for manufacturing the same Download PDF

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TWI834968B
TWI834968B TW110114131A TW110114131A TWI834968B TW I834968 B TWI834968 B TW I834968B TW 110114131 A TW110114131 A TW 110114131A TW 110114131 A TW110114131 A TW 110114131A TW I834968 B TWI834968 B TW I834968B
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substrate
acoustic sensor
diaphragm
cavity
layer
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TW202214516A (en
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何憲龍
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阿比特電子科技股份有限公司
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Priority to US17/488,071 priority patent/US11665485B2/en
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Abstract

A MEMS acoustic sensor includes a substrate, a back plate, a diaphragm, a dielectric layer and a connected portion. The diaphragm is disposed between the substrate and the back plate and includes a vibration portion. The dielectric layer is formed between the substrate and the diaphragm and has a cavity corresponding to the vibrating portion. The connected portion is located in the cavity and connects the vibrating portion and the substrate.

Description

微機電系統聲學感測器、微機電系統封裝結構及其 製造方法 Microelectromechanical system acoustic sensor, microelectromechanical system packaging structure and its Manufacturing method

本發明是有關於一種微機電系統聲學感測器、微機電系統封裝結構及其製造方法。 The invention relates to a micro-electromechanical system acoustic sensor, a micro-electromechanical system packaging structure and a manufacturing method thereof.

語音通信系統及話語辨識系統通常使用聲學麥克風以經由使用者說話所產生之聲波而拾聲使用者之話語。目前技術尚在耳道內同時使用骨及組織振動感測傳感器(以回應於骨傳導的較低話語頻率之語音聲音)及有限頻寬聲學麥克風(以偵測較弱空氣傳播的較高話語頻率之聲音)兩者的耳內式麥克風系統。振動感測傳感器可為加速度計,其可藉由適當的黏合劑或膠固定安裝於耳機之外殼的內壁。 Voice communication systems and speech recognition systems usually use acoustic microphones to pick up the user's words through the sound waves generated by the user's speech. Current technology uses both bone and tissue vibration-sensing sensors in the ear canal (to respond to bone-conducted lower speech frequency sounds) and limited-bandwidth acoustic microphones (to detect weaker airborne higher speech frequencies) of sound) in-ear microphone systems for both. The vibration sensing sensor can be an accelerometer, which can be fixedly mounted on the inner wall of the earphone casing through appropriate adhesive or glue.

因此,本發明提出一種微機電系統聲學感測器、微機電系統封裝結構及其製造方法,可改善習知問題。 Therefore, the present invention proposes a microelectromechanical system acoustic sensor, a microelectromechanical system packaging structure and a manufacturing method thereof, which can improve conventional problems.

本發明一實施例提出一種微機電系統聲學感測器。微機電系統聲學感測器包括一基板、一背板、一振膜、一介電層及一連接 部。振膜配置於基板與背板之間且包括一振動部。介電層形成於基板與振膜之間且具有一對應振動部的一第一腔體。連接部位於第一腔體內且連接振動部與基板。 An embodiment of the present invention provides a micro-electromechanical system acoustic sensor. The microelectromechanical system acoustic sensor includes a substrate, a backplane, a diaphragm, a dielectric layer and a connection department. The diaphragm is arranged between the base plate and the back plate and includes a vibrating part. The dielectric layer is formed between the substrate and the diaphragm and has a first cavity corresponding to the vibration part. The connection part is located in the first cavity and connects the vibration part and the substrate.

本發明另一實施例提出一種微機電系統封裝結構。微機電系統封裝結構包括一載板及一微機電系統聲學感測器。微機電系統聲學感測器配置在載板上。微機電系統聲學感測器包括一基板、一背板、一振膜、一介電層及一連接部。振膜配置於基板與背板之間且包括一振動部。介電層形成於基板與振膜之間且具有一對應振動部的一第一腔體。連接部位於第一腔體內且連接振動部與基板。 Another embodiment of the present invention provides a microelectromechanical system packaging structure. The MEMS packaging structure includes a carrier board and a MEMS acoustic sensor. The MEMS acoustic sensor is configured on the carrier board. The microelectromechanical system acoustic sensor includes a substrate, a backplane, a diaphragm, a dielectric layer and a connection part. The diaphragm is arranged between the base plate and the back plate and includes a vibrating part. The dielectric layer is formed between the substrate and the diaphragm and has a first cavity corresponding to the vibration part. The connection part is located in the first cavity and connects the vibration part and the substrate.

本發明另一實施例提出一種微機電系統聲學感測器之製造方法。製造方法包括以下步驟:形成一介電材料層於一基板層上;形成一振膜於介電材料層上;形成一背板於振膜,其中振膜位於基板層與背板之間且包括一振動部;形成一第二腔體於基板層,以形成一基板,其中腔體露出介電材料層;以及,透過基板之腔體,移除介電材料層的部分材料,以形成一介電層及一連接部,其中介電層位於基板與振膜之間且具有一對應振動部的一第一腔體,且連接部位於第一腔體內且連接振動部與基板。 Another embodiment of the present invention provides a method for manufacturing a microelectromechanical system acoustic sensor. The manufacturing method includes the following steps: forming a dielectric material layer on a substrate layer; forming a diaphragm on the dielectric material layer; forming a back plate on the diaphragm, wherein the diaphragm is located between the substrate layer and the back plate and includes a vibration part; forming a second cavity in the substrate layer to form a substrate, wherein the cavity exposes the dielectric material layer; and, through the cavity of the substrate, removing part of the dielectric material layer to form a dielectric An electrical layer and a connecting part, wherein the dielectric layer is located between the substrate and the diaphragm and has a first cavity corresponding to the vibrating part, and the connecting part is located in the first cavity and connects the vibrating part and the substrate.

為了對本發明之上述及其他方面有更佳的瞭解,下文特舉實施例,並配合所附圖式詳細說明如下: In order to have a better understanding of the above and other aspects of the present invention, examples are given below and are described in detail with reference to the accompanying drawings:

10,20,30,40,50:微機電系統封裝結構 10,20,30,40,50: MEMS packaging structure

11,31,41,51:載板 11,31,41,51: Carrier board

12:殼體 12: Shell

13:接墊 13: Pad

14:積體電路晶粒 14:Integrated circuit die

15:第一接點 15:First contact

16:第二接點 16: Second contact

41a,51a:開孔 41a,51a: opening

45,55:連接元件 45,55:Connecting elements

21A,31A:承載組 21A, 31A: Bearing group

25:連接線 25:Connecting line

31a:貫孔 31a:Through hole

100,100’,200,300,400,500:微機電系統聲學感測器 100,100’,200,300,400,500: MEMS acoustic sensor

110,110A,110’,210,310,310’,410,510:基板 110,110A,110’,210,310,310’,410,510:Substrate

110’,510’:基板層 110’, 510’: substrate layer

110r,210r,310r:第二腔體 110r, 210r, 310r: second cavity

110w:內側壁 110w: inner wall

111,211,311:承載部 111,211,311: Bearing part

112,212,312:突出部 112,212,312:Protrusion

120:背板 120:Back panel

120’:背板材料 120’: back plate material

125’:元件層 125’: component layer

130,330:振膜 130,330:Diaphragm

130’:振膜層 130’:Diaphragm layer

131:振動部 131:Vibration Department

1311:波紋層 1311:Corrugated layer

1312:肋條 1312:ribs

1313:貫孔 1313:Through hole

132A,132B,132C,331:包覆部 132A, 132B, 132C, 331: Covering part

140,150:介電層 140,150: Dielectric layer

130a1,130a2,140a,140a’,140a”,120a,145a,150a1,150a2,150a3,150a4:凹部 130a1,130a2,140a,140a’,140a”,120a,145a,150a1,150a2,150a3,150a4: concave part

140’,140”,140''',145,150”,150’:介電材料層 140’,140”,140''’,145,150”,150’: dielectric material layer

140r:第一腔體 140r: first cavity

141,142:支撐部 141,142: Support part

146:光阻 146:Photoresist

160A,160A’,160B1,160B2,260,460:連接部 160A, 160A’, 160B1, 160B2, 260, 460: connection part

160C1:限位部 160C1: Limiting part

170:電極層 170:Electrode layer

210w,310w:側壁 210w, 310w: side wall

330a:通道 330a: Channel

120A:突起 120A:Protrusion

510a,145a’,330b:開孔 510a, 145a’, 330b: opening

SP1:間隔 SP1: interval

R1:容置空間 R1: Accommodation space

V1:外部訊號源 V1: external signal source

第1A圖繪示依照本發明一實施例之微機電系統聲學感測器沿方向1A-1A’(方向1A-1A’繪示於第1C圖)的局部剖面圖。 Figure 1A shows a partial cross-sectional view of a microelectromechanical system acoustic sensor along the direction 1A-1A' (the direction 1A-1A' is shown in Figure 1C) according to an embodiment of the present invention.

第1B圖繪示依照本發明一實施例之微機電系統聲學感測器沿方向1B-1B’(方向1B-1B’繪示於第1C圖)的局部剖面圖。 Figure 1B shows a partial cross-sectional view of the MEMS acoustic sensor along the direction 1B-1B' (the direction 1B-1B' is shown in Figure 1C) according to an embodiment of the present invention.

第1C圖繪示第1A圖之微機電系統聲學感測器之基板的俯視圖(振膜及介電層以虛線繪示於第1C圖)。 Figure 1C shows a top view of the substrate of the MEMS acoustic sensor of Figure 1A (the diaphragm and dielectric layer are shown with dotted lines in Figure 1C).

第2A圖繪示依照本發明另一實施例之微機電系統聲學感測器沿方向2A-2A’的局部剖面圖。 Figure 2A shows a partial cross-sectional view of a MEMS acoustic sensor along the direction 2A-2A' according to another embodiment of the present invention.

第2B圖繪示第2A圖之微機電系統聲學感測器之基板的俯視圖。 Figure 2B shows a top view of the substrate of the MEMS acoustic sensor of Figure 2A.

第3A圖繪示依照本發明另一實施例之微機電系統聲學感測器沿方向3A-3A’的局部剖面圖。 Figure 3A illustrates a partial cross-sectional view along the direction 3A-3A' of a MEMS acoustic sensor according to another embodiment of the present invention.

第3B圖繪示依照本發明一實施例之微機電系統聲學感測器沿方向3B-3B’的局部剖面圖。 Figure 3B illustrates a partial cross-sectional view of the MEMS acoustic sensor along the direction 3B-3B' according to an embodiment of the present invention.

第3C圖繪示第3A圖之微機電系統聲學感測器之基板的俯視圖。 Figure 3C shows a top view of the substrate of the MEMS acoustic sensor of Figure 3A.

第4圖繪示依照本發明另一實施例之微機電系統聲學感測器的示意圖。 FIG. 4 is a schematic diagram of an MEMS acoustic sensor according to another embodiment of the invention.

第5圖繪示依照本發明另一實施例之微機電系統聲學感測器的示意圖。 FIG. 5 is a schematic diagram of an MEMS acoustic sensor according to another embodiment of the invention.

第6圖繪示依照本發明另一實施例之微機電系統聲學感測器的基板的俯視圖。 FIG. 6 shows a top view of a substrate of an MEMS acoustic sensor according to another embodiment of the present invention.

第7A圖繪示依照本發明另一實施例之微機電系統聲學感測器沿方向7A-7A’的局部剖面圖。 Figure 7A illustrates a partial cross-sectional view along the direction 7A-7A' of a MEMS acoustic sensor according to another embodiment of the present invention.

第7B圖繪示第7A圖之微機電系統聲學感測器之基板的俯視圖。 Figure 7B shows a top view of the substrate of the MEMS acoustic sensor of Figure 7A.

第8圖繪示依照本發明另一實施例之微機電系統聲學感測器的局部剖面圖。 FIG. 8 illustrates a partial cross-sectional view of an MEMS acoustic sensor according to another embodiment of the present invention.

第9圖繪示依照本發明一實施例之微機電系統封裝結構的剖面圖。 Figure 9 illustrates a cross-sectional view of a microelectromechanical system packaging structure according to an embodiment of the present invention.

第10圖繪示依照本發明另一實施例之微機電系統封裝結構的剖面圖。 Figure 10 is a cross-sectional view of a microelectromechanical system packaging structure according to another embodiment of the present invention.

第11圖繪示依照本發明另一實施例之微機電系統封裝結構的剖面圖。 Figure 11 is a cross-sectional view of a microelectromechanical system packaging structure according to another embodiment of the present invention.

第12圖繪示依照本發明另一實施例之微機電系統封裝結構的剖面圖。 Figure 12 illustrates a cross-sectional view of a microelectromechanical system packaging structure according to another embodiment of the present invention.

第13圖繪示依照本發明另一實施例之微機電系統封裝結構的剖面圖。 Figure 13 is a cross-sectional view of a microelectromechanical system packaging structure according to another embodiment of the present invention.

第14A圖至第14P圖繪示根據一實施例之微機電系統聲學感測器的製造方法。 Figures 14A to 14P illustrate a method of manufacturing a microelectromechanical system acoustic sensor according to an embodiment.

第15A~15B圖繪示第8圖之微機電系統聲學感測器的製造過程圖。 Figures 15A~15B illustrate the manufacturing process diagram of the MEMS acoustic sensor in Figure 8.

請參照第1A~1C圖,第1A圖繪示依照本發明一實施例之微機電系統聲學感測器100沿方向1A-1A’(方向1A-1A’繪示於第1C圖)的局部剖面圖,第1B圖繪示依照本發明一實施例之微機電系統 聲學感測器100沿方向1B-1B’(方向1B-1B’繪示於第1C圖)的局部剖面圖,而第1C圖繪示第1A圖之微機電系統聲學感測器100之基板110的俯視圖(振膜130及介電層140以虛線繪示於第1C圖)。 Please refer to Figures 1A to 1C. Figure 1A illustrates a partial cross-section of the MEMS acoustic sensor 100 along the direction 1A-1A' (the direction 1A-1A' is shown in Figure 1C) according to an embodiment of the present invention. Figure 1B illustrates a micro-electromechanical system according to an embodiment of the present invention. A partial cross-sectional view of the acoustic sensor 100 along the direction 1B-1B' (the direction 1B-1B' is shown in Figure 1C), and Figure 1C shows the substrate 110 of the MEMS acoustic sensor 100 in Figure 1A (the diaphragm 130 and the dielectric layer 140 are shown with dotted lines in Figure 1C).

微機電系統聲學感測器100例如是可應用於振動偵測器、麥克風、收音裝置等。微機電系統聲學感測器100或應用其之微機電系統封裝結構可配置在耳機、汽車、車輪、家電、工業儀器設備等依據所接收之振動(如,音頻、振動所產生)以進行振動分析的物品。 The microelectromechanical system acoustic sensor 100 can be applied to vibration detectors, microphones, sound-collecting devices, etc., for example. The microelectromechanical system acoustic sensor 100 or the microelectromechanical system package structure using it can be configured in headphones, cars, wheels, home appliances, industrial instruments and equipment, etc. to perform vibration analysis based on the received vibration (such as audio, vibration) items.

微機電系統聲學感測器100包括基板110、背板120、振膜130、介電層140及150、至少一連接部(例如是連接部160A、160B1及160B2、限位部160C1及電極層170。振膜130配置於基板110與背板120之間且包括一振動部131。介電層140形成於基板110與振膜130之間且具有一對應振動部131的第一腔體140r。連接部160A、160B1及160B2以及限位部160C1位於第一腔體140r內且連接振動部131與基板110。如此,外部訊號源V1可透過連接部傳遞至振膜130,使振膜130上下振動。外部訊號源V1例如是振動波。外部訊號源V1可透過固體或空氣傳播至振膜130。在本實施例中,外部訊號源V1可透過基板110傳遞至振膜130(稱固態傳導)。 The microelectromechanical system acoustic sensor 100 includes a substrate 110, a backplane 120, a diaphragm 130, dielectric layers 140 and 150, at least one connection part (for example, connection parts 160A, 160B1 and 160B2, a limiting part 160C1 and an electrode layer 170 The diaphragm 130 is disposed between the substrate 110 and the back plate 120 and includes a vibrating part 131. The dielectric layer 140 is formed between the substrate 110 and the diaphragm 130 and has a first cavity 140r corresponding to the vibrating part 131. Connection The parts 160A, 160B1 and 160B2 and the limiting part 160C1 are located in the first cavity 140r and connect the vibrating part 131 and the substrate 110. In this way, the external signal source V1 can be transmitted to the diaphragm 130 through the connecting part, causing the diaphragm 130 to vibrate up and down. The external signal source V1 is, for example, a vibration wave. The external signal source V1 can be transmitted to the diaphragm 130 through solid or air. In this embodiment, the external signal source V1 can be transmitted to the diaphragm 130 through the substrate 110 (called solid-state conduction).

基板110例如是矽基板、矽晶圓或其它合適的半導體材料,但本發明實施例不限於此。背板120及振膜130可包含多晶矽材料,但本發明實施例不限於此。介電層140及150例如是氧化物層。介電層150形成於背板120與振膜130之間,以於背板120與振膜130之間形成間隔SP1。當外部訊號源V1傳遞至微機電系統聲學感測器 100時,外部訊號源V1可透過連接部傳遞至振膜130,使振膜130於間隔SP1內相對背板120振動。間隔SP1可充滿空氣,因此間隔SP1可稱為空氣層(air gap)。電極層170可電性連接於振膜130與背板120。當外部訊號源V1傳遞至微機電系統聲學感測器100時,振膜130與背板120之間的間距隨振動而改變(電容值改變),對應的電壓訊號透過電極層170傳輸至一處理器(未繪示),處理器分析/處理此電壓訊號,並據以執行對應的動作。 The substrate 110 is, for example, a silicon substrate, a silicon wafer, or other suitable semiconductor materials, but embodiments of the present invention are not limited thereto. The back plate 120 and the diaphragm 130 may include polycrystalline silicon material, but embodiments of the present invention are not limited thereto. The dielectric layers 140 and 150 are, for example, oxide layers. The dielectric layer 150 is formed between the back plate 120 and the diaphragm 130 to form a gap SP1 between the back plate 120 and the diaphragm 130 . When the external signal source V1 is transmitted to the MEMS acoustic sensor At 100 , the external signal source V1 can be transmitted to the diaphragm 130 through the connecting portion, causing the diaphragm 130 to vibrate relative to the back plate 120 within the interval SP1. The gap SP1 can be filled with air, so the gap SP1 can be called an air gap. The electrode layer 170 can be electrically connected to the diaphragm 130 and the back plate 120 . When the external signal source V1 is transmitted to the MEMS acoustic sensor 100, the distance between the diaphragm 130 and the back plate 120 changes with the vibration (the capacitance value changes), and the corresponding voltage signal is transmitted to a processor through the electrode layer 170 A processor (not shown) analyzes/processes this voltage signal and performs corresponding actions accordingly.

如第1A圖所示,外部訊號源V1依序經過基板110、連接部與介電層140傳遞至振膜130。連接部連接基板110與振膜130,做為外部訊號源V1傳遞至振膜130的中介站,對於微機電系統聲學感測器100偵測或感應外部訊號源V1的靈敏度發揮關鍵作用。 As shown in FIG. 1A , the external signal source V1 is transmitted to the diaphragm 130 through the substrate 110 , the connection part and the dielectric layer 140 in sequence. The connection portion connects the substrate 110 and the diaphragm 130 and serves as an intermediary station for the external signal source V1 to be transmitted to the diaphragm 130, playing a key role in the sensitivity of the MEMS acoustic sensor 100 in detecting or sensing the external signal source V1.

如第1A及1C圖所示,基板110具有一第二腔體110r,且包含承載部111及至少一突出部112,突出部112從第二腔體110r的內側壁110w往承載部111的方向突出且連接於承載部111。突出部112可增加基板110的整體強度,提高後續封裝製程的良率。詳言之,在後續封裝製程中,微機電系統聲學感測器100配置於一載板上時會承受一定外力。因此,具有足夠強度之微機電系統聲學感測器100可安全地配置於載板上。在另一實施例中,若無強度考量,基板110也可省略突出部112。 As shown in Figures 1A and 1C, the substrate 110 has a second cavity 110r, and includes a carrying portion 111 and at least one protruding portion 112. The protruding portion 112 extends from the inner wall 110w of the second cavity 110r toward the carrying portion 111. protruding and connected to the carrying part 111 . The protruding portion 112 can increase the overall strength of the substrate 110 and improve the yield of subsequent packaging processes. Specifically, during the subsequent packaging process, the MEMS acoustic sensor 100 will withstand a certain external force when it is disposed on a carrier board. Therefore, the MEMS acoustic sensor 100 with sufficient strength can be safely disposed on the carrier board. In another embodiment, if there is no strength consideration, the protruding portion 112 of the substrate 110 may be omitted.

此外,振動部131的幾何結構可調整/改變振膜130的勁度(Stiffness),以獲得預期的振動偵測特性,例如是對於不同振動頻率的靈敏度及/或增加偵測頻寬。具體來說,如第1A圖所示,振動部 131包括至少一勁度調整結構,其例如是突出結構(如,肋條(強化勁度,避免振膜翹曲)、突點(強化勁度,避免振膜翹曲)、波紋層(弱化勁度,如同彈簧)等)或鏤空結構(如,盲孔或貫孔等(弱化勁度,且可釋放應力,讓振動容易傳達至振膜130)。本發明實施例不限定突出結構及/或鏤空結構的形狀、數量及/或尺寸。鏤空結構可以是封閉環形(如第1C圖之貫孔1313)或開放環形。 In addition, the geometric structure of the vibrating part 131 can adjust/change the stiffness of the diaphragm 130 to obtain desired vibration detection characteristics, such as sensitivity to different vibration frequencies and/or increasing the detection bandwidth. Specifically, as shown in Figure 1A, the vibrating part 131 includes at least one stiffness adjustment structure, which is, for example, a protruding structure (such as a rib (to strengthen the stiffness and prevent the diaphragm from warping), a protruding point (to strengthen the stiffness and prevent the diaphragm from warping), and a corrugated layer (to weaken the stiffness). , such as a spring) or a hollow structure (such as a blind hole or a through hole, etc. (which weakens the stiffness and can release the stress, allowing vibration to be easily transmitted to the diaphragm 130). Embodiments of the present invention are not limited to protruding structures and/or hollows The shape, number and/or size of the structure. The hollow structure can be a closed ring (such as the through hole 1313 in Figure 1C) or an open ring.

在本實施例中,如第1A圖所示,振動部131包括波紋層1311、肋條1312及貫孔1313等,其中貫孔1313例如是呈封閉環形(從第1C圖之視角看去)。透過勁度調整結構可調整/改變振膜130的勁度,可獲得微機電系統聲學感測器100的預期特性,例如是對於不同振動頻率的靈敏度及/或增加偵測頻寬。此外,突出結構的數量愈多及/或分佈區域愈大,則基板110的勁度愈大;反之則愈小。鏤空結構的數量愈多及/或分佈區域愈大,則基板110的勁度愈小;反之則愈大。在另一實施例中,振膜130或振動部131也可以是一平整的膜,即,振膜130或振動部131可不包含任何凹槽、貫孔及/或突出結構等。 In this embodiment, as shown in FIG. 1A , the vibration part 131 includes a corrugated layer 1311 , a rib 1312 and a through hole 1313 . The through hole 1313 is, for example, in a closed ring shape (viewed from the perspective of FIG. 1C ). The stiffness of the diaphragm 130 can be adjusted/changed through the stiffness adjustment structure, and expected characteristics of the MEMS acoustic sensor 100 can be obtained, such as sensitivity to different vibration frequencies and/or increased detection bandwidth. In addition, the greater the number and/or the larger the distribution area of the protruding structures, the greater the stiffness of the substrate 110; conversely, the smaller the stiffness. The greater the number of hollow structures and/or the larger the distribution area, the smaller the stiffness of the substrate 110 will be; vice versa, the stiffer the stiffness will be. In another embodiment, the diaphragm 130 or the vibrating part 131 may also be a flat film, that is, the diaphragm 130 or the vibrating part 131 may not include any grooves, through holes, and/or protruding structures, etc.

此外,連接部的設計可調整/改變振膜130的勁度(Stiffness),使微機電系統聲學感測器100符合預期特性,例如是對於不同振動頻率的靈敏度及/或增加偵測頻寬。另,本發明實施例所有連接部的至少一部分可視為錨(anchor),其提供支撐/固定振膜130的功能。此外,連接部數量愈多及/或分佈區域愈大,則振膜130或振動部131的勁度愈大;反之則愈小。 In addition, the design of the connection part can adjust/change the stiffness of the diaphragm 130 so that the MEMS acoustic sensor 100 meets expected characteristics, such as sensitivity to different vibration frequencies and/or increasing the detection bandwidth. In addition, at least a part of all connection parts in the embodiment of the present invention can be regarded as an anchor, which provides the function of supporting/fixing the diaphragm 130 . In addition, the greater the number of connecting parts and/or the larger the distribution area, the greater the stiffness of the diaphragm 130 or the vibrating part 131; conversely, the smaller the stiffness.

以幾何形狀來說,如第1A及1C圖所示,連接部160A 及連接部160B2例如是柱狀體,如圓柱體。連接部160B1例如是環形柱體,其可環繞連接部160A。限位部160C1例如是環形柱體,如封閉環形柱體或開放環形柱體。 In terms of geometric shape, as shown in Figures 1A and 1C, the connecting portion 160A The connecting portion 160B2 is, for example, a columnar body, such as a cylinder. The connecting portion 160B1 is, for example, an annular cylinder, which can surround the connecting portion 160A. The limiting part 160C1 is, for example, an annular cylinder, such as a closed annular cylinder or an open annular cylinder.

以位置來說,如第1A及1C圖所示,連接部的位置可對應於振動部131的任一區域。例如,連接部160A位於振動部131的中間區域,而連接部160B1及160B2可位於振動部131的邊緣區域。 In terms of position, as shown in FIGS. 1A and 1C , the position of the connecting portion can correspond to any area of the vibrating portion 131 . For example, the connecting portion 160A is located in the middle area of the vibrating portion 131 , and the connecting portions 160B1 and 160B2 can be located in the edge areas of the vibrating portion 131 .

以結構來說,如第1A及1C圖所示,限位部160C1例如是實心部,其例如是採用單一材質所形成,如振膜130之材料所形成。連接部160B1例如是多層結構,其包括第一包覆部132A、第二包覆部132B及支撐部141,其中第一包覆部132A及第二包覆部132B分別包覆支撐部141的相對二面。連接部160A及160B2例如是多層結構,其包含包覆部132C及支撐部142,其中包覆部132C包覆支撐部142。限位部160C1的位置可決定介電層140的側壁位置。 In terms of structure, as shown in FIGS. 1A and 1C , the limiting portion 160C1 is, for example, a solid portion, which is formed of a single material, such as the material of the diaphragm 130 . The connecting part 160B1 is, for example, a multi-layer structure, which includes a first coating part 132A, a second coating part 132B and a support part 141, where the first coating part 132A and the second coating part 132B respectively cover the opposite sides of the support part 141. Two sides. The connecting parts 160A and 160B2 are, for example, multi-layer structures, which include a covering part 132C and a supporting part 142, wherein the covering part 132C covers the supporting part 142. The position of the limiting portion 160C1 can determine the position of the sidewall of the dielectric layer 140 .

以材質來說,連接部可包含介電層140的材料及/或振膜130的材料。例如,以連接部160A來說,連接部160A之支撐部142為介電層140的一部分(材料相同),而包覆部132C為振膜130的一部分(材料相同),其中支撐部142與介電層140為同層結構(或,一體成形結構),而包覆部132C與振膜130為同層結構(或,一體成形結構)。以連接部160B1來說,連接部160B1由介電層140的一部分與振膜130的一部分所組成,例如第一包覆部132A及第二包覆部132B為振膜130的一部分(材料相同),第一包覆部132A、第二包覆部132B 與振膜130可以是同層結構(或,一體成形結構),而支撐部141為介電層140的一部分(材料相同),支撐部141為介電層140可以是同層結構(或,一體成形結構)。連接部160B2具有類似連接部160A的材質設計,容此不再贅述。此外,限位部160C1例如是振膜130的一部分(材料相同),限位部160C1與振膜130可以是同層結構(或,一體成形結構)。 In terms of materials, the connection portion may include the material of the dielectric layer 140 and/or the material of the diaphragm 130 . For example, taking the connection part 160A as an example, the support part 142 of the connection part 160A is a part of the dielectric layer 140 (the material is the same), and the covering part 132C is a part of the diaphragm 130 (the material is the same), where the support part 142 and the dielectric layer 142 are part of the diaphragm 130 . The electrical layer 140 has a same-layer structure (or an integrally formed structure), and the covering portion 132C and the diaphragm 130 have a same-layer structure (or an integrally formed structure). Taking the connection part 160B1 as an example, the connection part 160B1 is composed of a part of the dielectric layer 140 and a part of the diaphragm 130. For example, the first covering part 132A and the second covering part 132B are parts of the diaphragm 130 (the materials are the same). , the first covering part 132A, the second covering part 132B The diaphragm 130 and the diaphragm 130 may be of the same layer structure (or integrally formed structure), and the support part 141 is a part of the dielectric layer 140 (same material). The support part 141 is the dielectric layer 140 and may be of the same layer structure (or an integral structure) formed structure). The connecting portion 160B2 has a material design similar to that of the connecting portion 160A, which will not be described again. In addition, the limiting part 160C1 is, for example, a part of the diaphragm 130 (made of the same material), and the limiting part 160C1 and the diaphragm 130 may be of the same layer structure (or integrally formed structure).

本發明實施例並不限定連接部的形狀、位置、材質、層數(單層或多層)及/或尺寸等設計,只要微機電系統聲學感測器100符合預期特性即可。微機電系統聲學感測器100可包含至少一連接部,數個連接部中至少二者可具有完全相同、部分相同或相異設計。 Embodiments of the present invention do not limit the shape, position, material, number of layers (single layer or multi-layer) and/or size of the connecting portion, as long as the MEMS acoustic sensor 100 meets the expected characteristics. The MEMS acoustic sensor 100 may include at least one connection part, and at least two of the several connection parts may have completely identical, partially identical or different designs.

請參照第2A~2B圖,第2A圖繪示依照本發明另一實施例之微機電系統聲學感測器100’沿方向2A-2A’(方向2A-2A’繪示於第2B圖)的局部剖面圖,而第2B圖繪示第2A圖之微機電系統聲學感測器100’之基板210的俯視圖。 Please refer to Figures 2A~2B. Figure 2A illustrates the MEMS acoustic sensor 100' along the direction 2A-2A' (the direction 2A-2A' is shown in Figure 2B) according to another embodiment of the present invention. A partial cross-sectional view, and Figure 2B shows a top view of the substrate 210 of the MEMS acoustic sensor 100' of Figure 2A.

微機電系統聲學感測器100’例如是可應用於振動偵測器、麥克風、收音裝置等。微機電系統聲學感測器100’或應用其之微機電系統封裝結構可配置在耳機、汽車、車輪、家電或工業儀器設備等依據所接收之振動(如,音頻、振動所產生)以進行振動分析的物品。 The microelectromechanical system acoustic sensor 100' can be applied to, for example, vibration detectors, microphones, radio equipment, etc. The MEMS acoustic sensor 100' or the MEMS package structure using it can be configured in headphones, cars, wheels, home appliances or industrial equipment to vibrate based on the received vibrations (eg, generated by audio, vibration) Items analyzed.

微機電系統聲學感測器100’包括基板110A、背板120、振膜130、介電層140及150、至少一連接部(例如,連接部160A’)及電極層170。振膜130配置於基板110A與背板120之間且包括一振動部131。介電層140形成於基板110A與振膜130之間且具有一 對應振動部131的第一腔體140r。連接部160A’位於第一腔體140r內且連接振動部131與基板110A之承載部111。如此,外部訊號源V1可透過連接部160A’傳遞至振膜130,使振膜130上下振動。在本實施例中,當承載部111下方騰空時,外部訊號源V1會振動承載部111(產生加速度),此振動透過連接部160A’傳遞至振膜130。 The MEMS acoustic sensor 100' includes a substrate 110A, a back plate 120, a diaphragm 130, dielectric layers 140 and 150, at least one connection portion (for example, the connection portion 160A') and an electrode layer 170. The diaphragm 130 is disposed between the substrate 110A and the back plate 120 and includes a vibrating portion 131 . The dielectric layer 140 is formed between the substrate 110A and the diaphragm 130 and has a Corresponding to the first cavity 140r of the vibration part 131. The connection part 160A' is located in the first cavity 140r and connects the vibration part 131 and the bearing part 111 of the substrate 110A. In this way, the external signal source V1 can be transmitted to the diaphragm 130 through the connecting portion 160A', causing the diaphragm 130 to vibrate up and down. In this embodiment, when the lower part of the bearing part 111 is in the air, the external signal source V1 will vibrate the bearing part 111 (generating acceleration), and this vibration is transmitted to the diaphragm 130 through the connecting part 160A'.

微機電系統聲學感測器100’具有類似或同於前述微機電系統聲學感測器100的技術特徵,不同處在於,微機電系統聲學感測器100’可省略連接部160A、160B1與160B2之一者或一些,例如,省略連接部160B1及160B2,且連接部160A’的結構與微機電系統聲學感測器100之連接部160A的結構相異,且基板110A可省略突出部112。 The MEMS acoustic sensor 100' has similar or identical technical features to the MEMS acoustic sensor 100 mentioned above. The difference is that the MEMS acoustic sensor 100' can omit any of the connecting parts 160A, 160B1 and 160B2. One or some, for example, the connection portions 160B1 and 160B2 are omitted, and the structure of the connection portion 160A' is different from the structure of the connection portion 160A of the MEMS acoustic sensor 100 , and the substrate 110A can omit the protruding portion 112 .

如第2A圖所示,相較於連接部160A,本實施例之連接部160A’可省略包覆部132C,包覆部132C為振膜130的一部分(材料相同),包覆部132C與振膜130為同層結構(或,一體成形結構)。 As shown in Figure 2A, compared with the connecting portion 160A, the connecting portion 160A' of this embodiment can omit the covering portion 132C. The covering portion 132C is a part of the diaphragm 130 (the material is the same), and the covering portion 132C and the diaphragm are The film 130 has a same-layer structure (or an integrally formed structure).

請參照第3A~3C圖,第3A圖繪示依照本發明另一實施例之微機電系統聲學感測器200沿方向3A-3A’(方向3A-3A’繪示於第3C圖)的局部剖面圖,第3B圖繪示依照本發明一實施例之微機電系統聲學感測器200沿方向3B-3B’(方向3B-3B’繪示於第3C圖)的局部剖面圖,而第3C圖繪示第3A圖之微機電系統聲學感測器200之基板210的俯視圖(介電層140以虛線繪示於第3C圖)。 Please refer to Figures 3A to 3C. Figure 3A illustrates a part of the MEMS acoustic sensor 200 along the direction 3A-3A' (the direction 3A-3A' is shown in Figure 3C) according to another embodiment of the present invention. Cross-sectional view, Figure 3B shows a partial cross-sectional view of the MEMS acoustic sensor 200 along the direction 3B-3B' (the direction 3B-3B' is shown in Figure 3C) according to an embodiment of the present invention, and Figure 3C The figure shows a top view of the substrate 210 of the MEMS acoustic sensor 200 in FIG. 3A (the dielectric layer 140 is shown as a dotted line in FIG. 3C).

微機電系統聲學感測器200例如是可應用於振動偵測器、麥克風、收音裝置等。微機電系統聲學感測器200或應用其之微 機電系統封裝結構可配置在耳機、汽車、車輪、家電、工業儀器設備等依據所接收之振動(如,音頻、振動所產生)以進行振動分析的物品。 The microelectromechanical system acoustic sensor 200 can be applied to vibration detectors, microphones, sound-collecting devices, etc., for example. Microelectromechanical system acoustic sensor 200 or its micro The electromechanical system packaging structure can be configured in headphones, cars, wheels, home appliances, industrial instruments and other items that perform vibration analysis based on the received vibration (such as audio, vibration generated).

微機電系統聲學感測器200包括基板210、背板120、振膜130、介電層140及150、至少一連接部260及電極層170。微機電系統聲學感測器200具有類似或同於前述微機電系統聲學感測器100的技術特徵,不同處在於,微機電系統聲學感測器200之基板210的結構與基板110的結構相異。 The MEMS acoustic sensor 200 includes a substrate 210, a back plate 120, a diaphragm 130, dielectric layers 140 and 150, at least one connection portion 260 and an electrode layer 170. The MEMS acoustic sensor 200 has technical features similar to or identical to the aforementioned MEMS acoustic sensor 100 , except that the structure of the substrate 210 of the MEMS acoustic sensor 200 is different from the structure of the substrate 110 .

振膜130配置於基板210與背板120之間且包括一振動部131。介電層140形成於基板210與振膜130之間且具有一對應振動部131的第一腔體140r。連接部260位於第一腔體140r內且連接振動部131與基板210。如此,外部訊號源V1可透過連接部傳遞至振膜130,使振膜130上下振動。 The diaphragm 130 is disposed between the substrate 210 and the back plate 120 and includes a vibrating portion 131 . The dielectric layer 140 is formed between the substrate 210 and the diaphragm 130 and has a first cavity 140r corresponding to the vibrating part 131 . The connection part 260 is located in the first cavity 140r and connects the vibration part 131 and the substrate 210. In this way, the external signal source V1 can be transmitted to the diaphragm 130 through the connecting portion, causing the diaphragm 130 to vibrate up and down.

如第3A圖所示,基板210具有第二腔體210r且包括至少一承載部211及至少一突出部212。第二腔體210r與第一腔體140r的位置相對應,承載部211相對第二腔體210r之側壁210w往第二腔體210r的中心延伸。如第3B圖所示,連接部260位於振動部131與基板210之承載部211之間,且連接振動部131與承載部211。在本實施例中,連接部260為實心柱,其位於振膜130之振動部131的邊緣區域。此外,連接部260例如是介電層140的一部分,且連接部260與介電層140可以是同層結構(或,一體成形結構)。 As shown in FIG. 3A , the substrate 210 has a second cavity 210r and includes at least one carrying portion 211 and at least one protruding portion 212 . The position of the second cavity 210r corresponds to that of the first cavity 140r, and the bearing portion 211 extends toward the center of the second cavity 210r relative to the side wall 210w of the second cavity 210r. As shown in FIG. 3B , the connecting portion 260 is located between the vibrating portion 131 and the bearing portion 211 of the substrate 210 , and connects the vibrating portion 131 and the bearing portion 211 . In this embodiment, the connecting portion 260 is a solid column located at the edge area of the vibrating portion 131 of the diaphragm 130 . In addition, the connection portion 260 is, for example, a part of the dielectric layer 140 , and the connection portion 260 and the dielectric layer 140 can be a same-layer structure (or an integrally formed structure).

各突出部212連接對應之承載部211與側壁210w。在本實施例中,突出部212的寬度W1小於承載部211的寬度W2。此 外,相連接之突出部212與承載部211構成一承載組21A,本發明實施例係以四個承載組21A為例說明,然亦可少於四組或多於四組。此外,數個承載組21A可相對第二腔體210r的中心平均分佈,例如,相鄰二承載組21A相對第二腔體210r的中心的夾角大致上相等。 Each protruding portion 212 connects the corresponding bearing portion 211 and the side wall 210w. In this embodiment, the width W1 of the protruding portion 212 is smaller than the width W2 of the carrying portion 211 . this In addition, the connected protruding portion 212 and the bearing portion 211 form a bearing group 21A. The embodiment of the present invention takes four bearing groups 21A as an example, but it can also be less than four groups or more than four groups. In addition, several bearing groups 21A may be evenly distributed relative to the center of the second cavity 210r. For example, the angles between two adjacent bearing groups 21A relative to the center of the second cavity 210r are substantially equal.

請參照第4圖,其繪示依照本發明另一實施例之微機電系統聲學感測器300的示意圖,其中第4圖上方繪示微機電系統聲學感測器300沿方向4A-4A’(方向4A-4A’繪示於第4圖下方)的局部剖面圖,而第4圖下方繪示微機電系統聲學感測器300之基板310的俯視圖(振膜330之通道330a及介電層140以虛線繪示)。 Please refer to Figure 4, which is a schematic diagram of a MEMS acoustic sensor 300 according to another embodiment of the present invention. The upper part of Figure 4 shows the MEMS acoustic sensor 300 along the direction 4A-4A' ( The direction 4A-4A' is shown at the bottom of Figure 4), and the bottom of Figure 4 shows a top view of the substrate 310 of the MEMS acoustic sensor 300 (the channel 330a of the diaphragm 330 and the dielectric layer 140 (shown with dashed lines).

微機電系統聲學感測器300例如是可應用於振動偵測器、麥克風、收音裝置等。微機電系統聲學感測器300或應用其之微機電系統封裝結構可配置在耳機、汽車、車輪、家電、工業儀器設備等依據所接收之振動(如,音頻、振動所產生)以進行振動分析的物品。 The microelectromechanical system acoustic sensor 300 can be applied to vibration detectors, microphones, sound-collecting devices, etc., for example. The microelectromechanical system acoustic sensor 300 or the microelectromechanical system package structure using it can be configured in headphones, cars, wheels, home appliances, industrial instruments and equipment, etc. to perform vibration analysis based on the received vibration (such as audio, vibration generation) items.

微機電系統聲學感測器300包括基板310、背板120、振膜330、介電層140及150以及至少一連接部260。振膜330配置於基板310與背板120之間且包括一振動部131。介電層140形成於基板310與振膜330之間且具有一對應振動部131的第一腔體140r。連接部260位於第一腔體140r內且連接振動部131與基板310。如此,外部訊號源V1可透過連接部傳遞至振膜130,使振膜130上下振動。 The MEMS acoustic sensor 300 includes a substrate 310, a back plate 120, a diaphragm 330, dielectric layers 140 and 150, and at least one connection portion 260. The diaphragm 330 is disposed between the substrate 310 and the back plate 120 and includes a vibrating portion 131 . The dielectric layer 140 is formed between the substrate 310 and the diaphragm 330 and has a first cavity 140r corresponding to the vibrating part 131 . The connection part 260 is located in the first cavity 140r and connects the vibration part 131 and the substrate 310. In this way, the external signal source V1 can be transmitted to the diaphragm 130 through the connecting portion, causing the diaphragm 130 to vibrate up and down.

微機電系統聲學感測器300具有類似或同於前述微機電系統聲學感測器200的技術特徵,不同處在於,微機電系統聲學感測器300之基板310的結構與基板210的結構相異。 The MEMS acoustic sensor 300 has technical features similar to or identical to the aforementioned MEMS acoustic sensor 200 , except that the structure of the substrate 310 of the MEMS acoustic sensor 300 is different from the structure of the substrate 210 .

如第4圖所示,基板310具有第二腔體310r且包括至少一承載部311及至少一突出部312。第二腔體310r與第一腔體140r的位置相對應,承載部311相對第二腔體310r之一側壁310w往第二腔體310r的中心延伸。連接部260位於振動部131與基板310之承載部311之間。在本實施例中,如第4圖所示,連接部260為實心柱,其位於振膜330之振動部131的邊緣區域。 As shown in FIG. 4 , the substrate 310 has a second cavity 310r and includes at least one carrying portion 311 and at least one protruding portion 312 . The position of the second cavity 310r corresponds to that of the first cavity 140r, and the bearing portion 311 extends toward the center of the second cavity 310r relative to one side wall 310w of the second cavity 310r. The connection part 260 is located between the vibration part 131 and the bearing part 311 of the substrate 310 . In this embodiment, as shown in FIG. 4 , the connecting portion 260 is a solid column located at the edge area of the vibrating portion 131 of the diaphragm 330 .

如第4圖所示,突出部312相對側壁310w突出且連接承載部311與側壁310w。突出部312具有一寬度W3,其大於承載部311的寬度W4。此外,振膜330具有至少一通道330a,通道330a與突出部312在位置上相對應且與第一腔體140r相通,如此,在蝕刻介電層140的製程中,蝕刻液可透過通道330a移除介電層140的材料。在本實施例中,通道330a的俯視形狀例如是圓形,然亦可為橢圓形或多邊形。在本實施例中,各通道330a例如是單點設計,或也可以延伸成線形,如曲線、直線或其組合。只要能獲得預期的介電層140的結構/圖案即可,本發明實施例不限制通道330a的數量、尺寸及/或幾何形狀。此外,通道330a可做為勁度調整結構(如,鏤空結構),其可弱化勁度,釋放應力,讓振動容易傳達至振膜130。 As shown in FIG. 4 , the protruding portion 312 protrudes relative to the side wall 310 w and connects the bearing portion 311 and the side wall 310 w. The protruding portion 312 has a width W3 which is greater than the width W4 of the carrying portion 311 . In addition, the diaphragm 330 has at least one channel 330a. The channel 330a is positionally corresponding to the protrusion 312 and communicates with the first cavity 140r. In this way, during the process of etching the dielectric layer 140, the etching liquid can move through the channel 330a. Remove the material of dielectric layer 140 . In this embodiment, the top view shape of the channel 330a is, for example, a circle, but it may also be an ellipse or a polygon. In this embodiment, each channel 330a is, for example, a single-point design, or may also be extended into a linear shape, such as a curve, a straight line, or a combination thereof. As long as the desired structure/pattern of the dielectric layer 140 can be obtained, embodiments of the present invention do not limit the number, size and/or geometry of the channels 330a. In addition, the channel 330a can be used as a stiffness adjustment structure (eg, a hollow structure), which can weaken the stiffness, release stress, and allow vibration to be easily transmitted to the diaphragm 130.

此外,相連接之突出部312與承載部311構成一承載組31A,本發明實施例係以四個承載組31A為例說明,然亦可少於四組或多於四組。此外,數個承載組31A可相對第二腔體310r的中心平均分佈,例如,相鄰二承載組31A相對第二腔體210r的中心的夾角大致上相等。 In addition, the connected protruding portion 312 and the bearing portion 311 form a bearing group 31A. The embodiment of the present invention takes four bearing groups 31A as an example, but it can also be less than four groups or more than four groups. In addition, several bearing groups 31A may be evenly distributed relative to the center of the second cavity 310r. For example, the angles between two adjacent bearing groups 31A relative to the center of the second cavity 210r are substantially equal.

請參照第5圖,其繪示依照本發明另一實施例之微機電系統聲學感測器400的示意圖,其中第5圖上方繪示微機電系統聲學感測器400沿方向5A-5A’(方向5A-5A’繪示於第5圖下方)的局部剖面圖,而第5圖下方繪示微機電系統聲學感測器400之基板310的俯視圖(振膜330之通道330a及介電層140以虛線繪示)。 Please refer to Figure 5, which illustrates a schematic diagram of a MEMS acoustic sensor 400 according to another embodiment of the present invention. The upper part of Figure 5 shows the MEMS acoustic sensor 400 along the direction 5A-5A' ( The direction 5A-5A' is shown in the lower part of Figure 5), and the lower part of Figure 5 shows a top view of the substrate 310 of the MEMS acoustic sensor 400 (the channel 330a of the diaphragm 330 and the dielectric layer 140 (shown with dashed lines).

微機電系統聲學感測器400例如是可應用於振動偵測器、麥克風、收音裝置等。微機電系統聲學感測器400或應用其之微機電系統封裝結構可配置在耳機、汽車、車輪、家電、工業儀器設備等依據所接收之振動(如,音頻、振動所產生)以進行振動分析的物品。 The microelectromechanical system acoustic sensor 400 can be applied to vibration detectors, microphones, sound-collecting devices, etc., for example. The microelectromechanical system acoustic sensor 400 or the microelectromechanical system package structure using it can be configured in headphones, cars, wheels, home appliances, industrial instruments and equipment, etc. to perform vibration analysis based on the received vibration (such as audio, vibration) items.

微機電系統聲學感測器400包括基板310、背板120、振膜330、介電層140及150以及至少一連接部460。振膜330配置於基板310與背板120之間且包括振動部131。介電層140形成於基板310與振膜330之間且具有一對應振動部131的第一腔體140r。連接部460位於第一腔體140r內且連接振動部131與基板310。如此,外部訊號源V1可透過連接部傳遞至振膜330,使振膜330上下振動。 The MEMS acoustic sensor 400 includes a substrate 310, a back plate 120, a diaphragm 330, dielectric layers 140 and 150, and at least one connection portion 460. The diaphragm 330 is disposed between the substrate 310 and the back plate 120 and includes a vibration part 131 . The dielectric layer 140 is formed between the substrate 310 and the diaphragm 330 and has a first cavity 140r corresponding to the vibrating part 131 . The connection part 460 is located in the first cavity 140r and connects the vibration part 131 and the substrate 310. In this way, the external signal source V1 can be transmitted to the diaphragm 330 through the connecting portion, causing the diaphragm 330 to vibrate up and down.

微機電系統聲學感測器400具有類似或同於前述微機電系統聲學感測器300的技術特徵,不同處在於,微機電系統聲學感測器400之連接部460的結構與連接部260的結構相異。 The MEMS acoustic sensor 400 has technical features similar to or identical to the aforementioned MEMS acoustic sensor 300 . The difference lies in the structure of the connecting portion 460 of the MEMS acoustic sensor 400 and the structure of the connecting portion 260 . Different.

如第5圖所示,基板310具有第二腔體310r且包括至少一承載部311及至少一突出部312。第二腔體310r與第一腔體140r的位置相對應,承載部311相對第二腔體310r之側壁310w往第二腔體310r的中心延伸。如第5圖所示,連接部460位於振動部131與基 板310之承載部311之間且連接振動部131與基板310。在本實施例中,連接部460為多層實心柱,其位於振膜330之振動部131的邊緣區域。連接部460包括包覆部331及支撐部141,其中包覆部331包覆支撐部141的周緣面。以材質來說,連接部460由介電層140的一部分與振膜330的一部分所組成,例如,包覆部331為振膜330的一部分,包覆部331與振膜330可以是同層結構(或,一體成形結構),而支撐部141為介電層140的一部分,支撐部141為介電層140可以是同層結構(或,一體成形結構)。包覆部331可確定支撐部141的位置,以獲得更精確/精準的振膜330的勁度。 As shown in FIG. 5 , the substrate 310 has a second cavity 310r and includes at least one carrying portion 311 and at least one protruding portion 312 . The position of the second cavity 310r corresponds to that of the first cavity 140r, and the bearing portion 311 extends toward the center of the second cavity 310r relative to the side wall 310w of the second cavity 310r. As shown in Figure 5, the connecting portion 460 is located between the vibrating portion 131 and the base The vibration part 131 and the base plate 310 are connected between the bearing parts 311 of the plate 310 . In this embodiment, the connecting portion 460 is a multi-layered solid column located at the edge area of the vibrating portion 131 of the diaphragm 330 . The connecting part 460 includes a covering part 331 and a supporting part 141 , where the covering part 331 covers the peripheral surface of the supporting part 141 . In terms of material, the connection part 460 is composed of a part of the dielectric layer 140 and a part of the diaphragm 330. For example, the covering part 331 is a part of the diaphragm 330, and the covering part 331 and the diaphragm 330 may be of the same layer structure. (or, an integrally formed structure), and the support portion 141 is a part of the dielectric layer 140 , and the support portion 141 and the dielectric layer 140 may be a same-layer structure (or, an integrally formed structure). The covering portion 331 can determine the position of the supporting portion 141 to obtain a more accurate/accurate stiffness of the diaphragm 330 .

此外,如第5圖所示,相連接之突出部312與承載部311構成一承載組31A,本發明實施例係以四個承載組31A為例說明,然亦可少於四組或多於四組。此外,數個承載組31A可相對第二腔體310r的中心平均分佈,例如,相鄰二承載組31A相對第二腔體210r的中心的夾角大致上相等。 In addition, as shown in Figure 5, the connected protruding portion 312 and the bearing portion 311 form a bearing group 31A. The embodiment of the present invention takes four bearing groups 31A as an example, but it can also be less than four groups or more than 31A. Four groups. In addition, several bearing groups 31A may be evenly distributed relative to the center of the second cavity 310r. For example, the angles between two adjacent bearing groups 31A relative to the center of the second cavity 210r are substantially equal.

請參照第6圖,其繪示依照本發明另一實施例之微機電系統聲學感測器400的基板310’的俯視圖。基板310’具有類似或同於前述基板310的特徵,不同處在於,本實施例之基板310’包含多個承載組31A,其中並非所有的承載組都與連接部260連接。例如,本實施例的承載組31A的數量例如是六個,其中三個承載組31A分別與三個連接部260連接,而另三個承載組31A未與連接部260連接。 Please refer to FIG. 6 , which illustrates a top view of the substrate 310' of the MEMS acoustic sensor 400 according to another embodiment of the present invention. The substrate 310' has similar or identical features to the aforementioned substrate 310. The difference is that the substrate 310' of this embodiment includes a plurality of bearing groups 31A, and not all of the bearing groups are connected to the connecting portion 260. For example, the number of the bearing groups 31A in this embodiment is six, of which three bearing groups 31A are connected to three connecting parts 260 respectively, while the other three bearing groups 31A are not connected to the connecting parts 260 .

請參照第7A~7B圖,第7A圖繪示依照本發明另一實施例之微機電系統聲學感測器400’沿方向7A-7A’(方向7A-7A’繪示 於第7B圖)的局部剖面圖,而第7B圖繪示第7A圖之微機電系統聲學感測器400’之基板410的俯視圖(振膜130之振動部131以虛線繪示於第7B圖)。 Please refer to Figures 7A~7B. Figure 7A illustrates a microelectromechanical system acoustic sensor 400' along the direction 7A-7A' (the direction 7A-7A' is shown) according to another embodiment of the present invention. 7B), and FIG. 7B shows a top view of the substrate 410 of the MEMS acoustic sensor 400' in FIG. 7A (the vibrating part 131 of the diaphragm 130 is shown with a dotted line in FIG. 7B ).

微機電系統聲學感測器400’例如是可應用於振動偵測器、麥克風、收音裝置等。微機電系統聲學感測器400’或應用其之微機電系統封裝結構可配置在耳機、汽車、車輪、家電或工業儀器設備等依據所接收之振動(如,音頻、振動所產生)以進行振動分析的物品。 The microelectromechanical system acoustic sensor 400' can be applied to vibration detectors, microphones, sound radio devices, etc., for example. The MEMS acoustic sensor 400' or the MEMS package structure using it can be configured in headphones, cars, wheels, home appliances or industrial instruments and equipment to vibrate based on the received vibrations (eg, generated by audio, vibration) Items analyzed.

微機電系統聲學感測器400’包括基板410、背板120、振膜330、介電層140及150、至少一連接部(如,460)及電極層170。振膜330配置於基板410與背板120之間且包括一振動部131。介電層140形成於基板410與振膜330之間且具有一對應振動部131的第一腔體140r。連接部460位於第一腔體140r內且連接振動部131與基板410。如此,外部訊號源V1可透過連接部傳遞至振膜330,使振膜330上下振動。 The MEMS acoustic sensor 400' includes a substrate 410, a back plate 120, a diaphragm 330, dielectric layers 140 and 150, at least one connection portion (eg, 460), and an electrode layer 170. The diaphragm 330 is disposed between the substrate 410 and the back plate 120 and includes a vibrating portion 131 . The dielectric layer 140 is formed between the substrate 410 and the diaphragm 330 and has a first cavity 140r corresponding to the vibrating part 131 . The connection part 460 is located in the first cavity 140r and connects the vibration part 131 and the substrate 410. In this way, the external signal source V1 can be transmitted to the diaphragm 330 through the connecting portion, causing the diaphragm 330 to vibrate up and down.

本實施例之基板410具有類似或同於前述基板310的特徵,不同處在於,基板410僅包含一個承載組31A,其中一個連接部460連接承載組31A與振動部131。相較於前述微機電系統聲學感測器400,本實施例之連接部460的數量只有一個,因此連接部460對於振動部131的拘束較低,使振膜330對於外部訊號源的感應或偵測更為敏感。 The substrate 410 of this embodiment has similar or identical features to the aforementioned substrate 310 . The difference is that the substrate 410 only includes one bearing group 31A, and a connecting portion 460 connects the bearing group 31A and the vibration portion 131 . Compared with the aforementioned micro-electromechanical system acoustic sensor 400, the number of the connection part 460 in this embodiment is only one, so the connection part 460 has lower constraints on the vibrating part 131, so that the diaphragm 330 can sense or detect the external signal source. The test is more sensitive.

在另一實施例中,基板410可具有至少一開孔(類似後述之開孔510a),其可從基板410的下表面410b往基板410的上表面 410u的方向延伸,例如可延伸至上表面410u(開孔為貫孔)或不延伸至上表面410u(開孔為盲孔)。透過此至少一開孔可調整/改變基板410的勁度,以獲得微機電系統聲學感測器400’的預期特性,例如是對於不同振動頻率的靈敏度及/或增加偵測頻寬。 In another embodiment, the substrate 410 may have at least one opening (similar to the opening 510a described below), which may be from the lower surface 410b of the substrate 410 to the upper surface of the substrate 410. The direction of 410u extends, for example, it may extend to the upper surface 410u (the opening is a through hole) or not extend to the upper surface 410u (the opening is a blind hole). The stiffness of the substrate 410 can be adjusted/changed through the at least one opening to obtain the desired characteristics of the MEMS acoustic sensor 400', such as sensitivity to different vibration frequencies and/or increasing the detection bandwidth.

如第7A圖所示,通道330a、波紋層1311與振膜330之至少一開孔330b中至少一者如同彈簧結構,其與連接部相連,使外部訊號源容易傳達至振膜330,使振膜330容易感應到振動變化。開孔330b例如是貫孔或盲孔。此外,振膜330更包含至少一突起(dimple)120A,其可防止振膜330/振動部131與基板410接觸而沾黏。 As shown in FIG. 7A, at least one of the channel 330a, the corrugated layer 1311 and at least one opening 330b of the diaphragm 330 is like a spring structure, which is connected to the connecting portion, so that the external signal source can easily be transmitted to the diaphragm 330, so that the vibration Membrane 330 is susceptible to vibration changes. The opening 330b is, for example, a through hole or a blind hole. In addition, the diaphragm 330 further includes at least one dimple 120A, which can prevent the diaphragm 330/vibrating portion 131 from contacting and sticking to the substrate 410.

請參照第8圖,其繪示依照本發明另一實施例之微機電系統聲學感測器500的局部剖面圖。 Please refer to FIG. 8 , which illustrates a partial cross-sectional view of a MEMS acoustic sensor 500 according to another embodiment of the present invention.

微機電系統聲學感測器500例如是可應用於振動偵測器、麥克風、收音裝置等。微機電系統聲學感測器500或應用其之微機電系統封裝結構可配置在耳機、汽車、車輪、家電、工業儀器設備等依據所接收之振動(如,音頻、振動所產生)以進行振動分析的物品。 The microelectromechanical system acoustic sensor 500 can be applied to vibration detectors, microphones, sound-collecting devices, etc., for example. The microelectromechanical system acoustic sensor 500 or the microelectromechanical system package structure using it can be configured in headphones, cars, wheels, home appliances, industrial instruments and equipment, etc. to perform vibration analysis based on the received vibrations (eg, generated by audio, vibration) items.

微機電系統聲學感測器500包括基板510、背板120、振膜130、介電層140及150以及至少一連接部。振膜130配置於基板510與背板120之間且包括一振動部131。本發明實施例之微機電系統聲學感測器500具有與微機電系統聲學感測器100相同或相似特徵,不同處在於,微機電系統聲學感測器500之基板510的結構不同。 The MEMS acoustic sensor 500 includes a substrate 510, a back plate 120, a diaphragm 130, dielectric layers 140 and 150, and at least one connection part. The diaphragm 130 is disposed between the substrate 510 and the back plate 120 and includes a vibrating portion 131 . The MEMS acoustic sensor 500 in the embodiment of the present invention has the same or similar features as the MEMS acoustic sensor 100 , except that the structure of the substrate 510 of the MEMS acoustic sensor 500 is different.

如第8圖所示,基板510具有至少一開孔510a,開孔 510a從基板510的下表面510b往基板510的上表面510u的方向延伸,但不貫穿基板510。在另一實施例中,開孔510a可貫穿基板510。開孔510a可調整/改變基板510的勁度,以獲得微機電系統聲學感測器500的預期特性,例如是對於不同振動頻率的靈敏度及/或增加偵測頻寬。此外,開孔510a愈長及/或開孔510a愈多,則基板510的勁度愈小;反之則愈大。本發明實施例不限定開孔510a的數量,其例如是四個,然亦可更少或更多。 As shown in Figure 8, the substrate 510 has at least one opening 510a. 510a extends from the lower surface 510b of the substrate 510 toward the upper surface 510u of the substrate 510, but does not penetrate the substrate 510. In another embodiment, the opening 510a may penetrate the substrate 510. The opening 510a can adjust/change the stiffness of the substrate 510 to obtain the desired characteristics of the MEMS acoustic sensor 500, such as sensitivity to different vibration frequencies and/or increasing the detection bandwidth. In addition, the longer the openings 510a are and/or the more the openings 510a are, the smaller the stiffness of the substrate 510 is; vice versa, the stiffness is larger. The embodiment of the present invention does not limit the number of openings 510a, which is, for example, four, but can also be less or more.

在本實施例中,至少一開孔510a可形成於第1B圖之基板110的突出部112或其它適合部位;或者,至少一開孔510a可形成於第3B圖之基板210的突出部212或其它適合部位;或者,至少一開孔510a可形成於第4圖之基板310的突出部312或其它適合部位;或者,至少一開孔510a可形成於第5圖之基板310的突出部312或其它適合部位。 In this embodiment, at least one opening 510a can be formed in the protruding portion 112 or other suitable location of the substrate 110 in Figure 1B; or, at least one opening 510a can be formed in the protruding portion 212 or other suitable locations of the substrate 210 in Figure 3B. Other suitable locations; alternatively, at least one opening 510a may be formed in the protruding portion 312 of the substrate 310 in Figure 4 or other appropriate locations; alternatively, at least one opening 510a may be formed in the protruding portion 312 or other appropriate locations of the substrate 310 in Figure 5 Other suitable parts.

請參照第9圖,其繪示依照本發明一實施例之微機電系統封裝結構10的剖面圖。微機電系統封裝結構10可包括微機電系統聲學感測器100、載板11、殼體12、接墊13、積體電路晶粒14、至少一第一接點15及至少一第二接點16。載板11與殼體12可定義出容置空間R1。微機電系統聲學感測器100可配置在載板11之接墊13上。接墊13例如是具有絕緣性及/或導熱性。積體電路晶粒14可配置在載板11上。可藉由打線方式電性連接微機電系統聲學感測器100與積體電路晶粒14以及電性連接積體電路晶粒14與載板11。在一實施例中,載板11可包括印刷電路板或本身為印刷電路板。在一實施例 中,積體電路晶粒14例如是特定應用積體電路(Application Specific Integrated Circuit,ASIC)晶片。在一實施例中,殼體12連接於載板11,且覆蓋微機電系統聲學感測器100、載板11、接墊13及積體電路晶粒14。載板11包括導電材料,如金屬。在一實施例中,殼體12可包括印刷電路板。一實施例中,載板11是設置靠近訊號源(訊號源V1方向以載板11下方的箭頭表示,但本揭露不限於此),包括固態傳導路徑,例如耳骨等。一實施例中,微機電系統封裝結構內無材料的空部分可填充氣體,例如空氣,製造簡單且成本較低。另一實施例中,微機電系統封裝結構內無材料的空部分可抽真空,以降低阻尼作用,造成較低的能量損失或機械耗散。在另一實施例中,微機電系統封裝結構10之微機電系統聲學感測器100可改由微機電系統聲學感測器100’、200、300、400、400’與500的任一者取代。 Please refer to FIG. 9 , which illustrates a cross-sectional view of a microelectromechanical system packaging structure 10 according to an embodiment of the present invention. The MEMS package structure 10 may include a MEMS acoustic sensor 100, a carrier 11, a housing 12, a pad 13, an integrated circuit die 14, at least one first contact 15 and at least one second contact 16. The carrier board 11 and the housing 12 can define an accommodation space R1. The MEMS acoustic sensor 100 can be disposed on the pad 13 of the carrier board 11 . The pad 13 has, for example, insulation and/or thermal conductivity. The integrated circuit die 14 may be disposed on the carrier board 11 . The MEMS acoustic sensor 100 and the integrated circuit die 14 can be electrically connected through wire bonding, and the integrated circuit die 14 and the carrier board 11 can be electrically connected. In one embodiment, the carrier board 11 may include a printed circuit board or be a printed circuit board itself. In one embodiment , the integrated circuit chip 14 is, for example, an application specific integrated circuit (Application Specific Integrated Circuit, ASIC) chip. In one embodiment, the housing 12 is connected to the carrier board 11 and covers the MEMS acoustic sensor 100 , the carrier board 11 , the pads 13 and the integrated circuit die 14 . The carrier 11 includes electrically conductive material, such as metal. In one embodiment, housing 12 may include a printed circuit board. In one embodiment, the carrier board 11 is disposed close to the signal source (the direction of the signal source V1 is indicated by the arrow below the carrier board 11, but the present disclosure is not limited thereto), and includes solid conductive paths, such as ear bones. In one embodiment, the empty portion without material in the MEMS packaging structure can be filled with gas, such as air, which is simple to manufacture and low in cost. In another embodiment, the empty portion without material in the MEMS packaging structure can be evacuated to reduce the damping effect, resulting in lower energy loss or mechanical dissipation. In another embodiment, the MEMS acoustic sensor 100 of the MEMS package structure 10 can be replaced by any one of the MEMS acoustic sensors 100', 200, 300, 400, 400' and 500. .

第一接點15與第二接點16電性連接。由第二接點16連接第一接點15來提供積體電路晶粒14的驅動輸入訊號,且及將微機電系統聲學感測器100所感測之感測訊號經積體電路晶粒14處理後輸出到第一接點15,然後由第二接點16輸出感測訊號。 The first contact 15 and the second contact 16 are electrically connected. The second contact 16 is connected to the first contact 15 to provide a driving input signal of the integrated circuit die 14 , and the sensing signal sensed by the MEMS acoustic sensor 100 is processed by the integrated circuit die 14 Then it is output to the first contact 15, and then the second contact 16 outputs the sensing signal.

請參照第10圖,其繪示依照本發明另一實施例之微機電系統封裝結構20的剖面圖。微機電系統封裝結構20可包括微機電系統聲學感測器100、載板11、殼體12、接墊13、積體電路晶粒14、、至少一第一接點15、至少一第二接點16及連接線25。微機電系統封裝結構20具有與微機電系統封裝結構10相同或相似結構,不同處在於,微機電系統聲學感測器100配置在殼體12上,例如是配置在殼體 12中與載板11相對之上部,然亦可配置在殼體12的側部。此外,微機電系統封裝結構20更包括電性連接積體電路晶粒14與載板11的連接線25。連接線25可形成於載板11及殼體12上、內或外,且連接至少一第一接點15與至少一第二接點16。連接線25例如是導電線,如銅線等,其可採用例如是印刷方式形成於載板11及殼體12。在另一實施例中,微機電系統封裝結構20之微機電系統聲學感測器100可改由微機電系統聲學感測器100’、200、300、400、400’與500的任一者取代。 Please refer to FIG. 10 , which illustrates a cross-sectional view of a microelectromechanical system packaging structure 20 according to another embodiment of the present invention. The MEMS package structure 20 may include the MEMS acoustic sensor 100, a carrier 11, a housing 12, a pad 13, an integrated circuit die 14, at least one first contact 15, and at least one second contact. Point 16 and connecting line 25. The MEMS package structure 20 has the same or similar structure as the MEMS package structure 10 . The difference is that the MEMS acoustic sensor 100 is disposed on the casing 12 , for example, on the casing 12 . The upper part of 12 opposite to the carrier plate 11 can also be arranged on the side of the housing 12 . In addition, the MEMS packaging structure 20 further includes connection lines 25 that electrically connect the integrated circuit die 14 and the carrier board 11 . The connection line 25 can be formed on, inside or outside the carrier board 11 and the housing 12, and connects at least one first contact 15 and at least one second contact 16. The connection wire 25 is, for example, a conductive wire, such as a copper wire, which can be formed on the carrier board 11 and the casing 12 by, for example, printing. In another embodiment, the MEMS acoustic sensor 100 of the MEMS package structure 20 can be replaced by any one of the MEMS acoustic sensors 100', 200, 300, 400, 400' and 500. .

請參照第11圖,其繪示依照本發明另一實施例之微機電系統封裝結構30的剖面圖。微機電系統封裝結構30可包括微機電系統聲學感測器100、載板31、殼體12、接墊13、積體電路晶粒14、至少一第一接點15及至少一第二接點16。微機電系統封裝結構30具有與微機電系統封裝結構10相同或相似結構,不同處在於,載板31具有貫孔31a。貫孔31a位於基板110的第二腔體110r下方。貫孔31a可對外部空氣中的聲音訊號提供進入微機電系統封裝結構30的路徑,然本發明實施例不限於此。在其它實施例中,貫孔31a可設置在殼體12,例如至少一貫孔31a形成於殼體12的上部及/或側部。在另一實施例中,微機電系統封裝結構30之微機電系統聲學感測器100可改由微機電系統聲學感測器100’、200、300、400、400’與500的任一者取代。 Please refer to FIG. 11 , which illustrates a cross-sectional view of a microelectromechanical system packaging structure 30 according to another embodiment of the present invention. The MEMS package structure 30 may include the MEMS acoustic sensor 100, a carrier 31, a housing 12, a pad 13, an integrated circuit die 14, at least one first contact 15 and at least one second contact 16. The MEMS packaging structure 30 has the same or similar structure as the MEMS packaging structure 10 , except that the carrier board 31 has a through hole 31 a. The through hole 31a is located below the second cavity 110r of the substrate 110. The through hole 31a can provide a path for sound signals in the external air to enter the MEMS packaging structure 30, but embodiments of the present invention are not limited thereto. In other embodiments, the through hole 31 a may be provided in the housing 12 , for example, at least one through hole 31 a is formed in the upper part and/or the side part of the housing 12 . In another embodiment, the MEMS acoustic sensor 100 of the MEMS package structure 30 can be replaced by any one of the MEMS acoustic sensors 100', 200, 300, 400, 400' and 500. .

請參照第12圖,其繪示依照本發明另一實施例之微機電系統封裝結構40的剖面圖。微機電系統封裝結構40可包括微機電 系統聲學感測器500、載板41、殼體12、接墊13、積體電路晶粒14、至少一連接元件45、至少一第一接點15及至少一第二接點16。微機電系統封裝結構40具有與微機電系統封裝結構10相同或相似結構,不同處在於,微機電系統聲學感測器以元件500取代,且載板41的結構不同。 Please refer to FIG. 12 , which illustrates a cross-sectional view of a microelectromechanical system packaging structure 40 according to another embodiment of the present invention. Microelectromechanical system package structure 40 may include microelectromechanical The system acoustic sensor 500 , the carrier board 41 , the housing 12 , the pads 13 , the integrated circuit die 14 , at least one connecting component 45 , at least one first contact 15 and at least one second contact 16 . The MEMS package structure 40 has the same or similar structure as the MEMS package structure 10 , except that the MEMS acoustic sensor is replaced by the component 500 and the structure of the carrier board 41 is different.

載板41具有一開孔41a,在本實施例中,開孔41a例如是盲孔,如凹部或凹槽。微機電系統聲學感測器500配置在載板41上,且基板510的一部分在位置上對應開孔41a。連接元件45配置在開孔41a,並連接或接觸微機電系統聲學感測器500的基板510。外部訊號源V1可透過連接元件45傳遞給微機電系統聲學感測器500。在另一實施例中,微機電系統封裝結構40之微機電系統聲學感測器500可改由微機電系統聲學感測器100’、100、200、300、400與400’的任一者取代。 The carrier plate 41 has an opening 41a. In this embodiment, the opening 41a is, for example, a blind hole, such as a recess or a groove. The microelectromechanical system acoustic sensor 500 is arranged on the carrier board 41, and a part of the substrate 510 is positioned corresponding to the opening 41a. The connecting element 45 is disposed in the opening 41 a and is connected or contacted with the substrate 510 of the MEMS acoustic sensor 500 . The external signal source V1 can be transmitted to the MEMS acoustic sensor 500 through the connecting element 45 . In another embodiment, the MEMS acoustic sensor 500 of the MEMS package structure 40 can be replaced by any one of the MEMS acoustic sensors 100', 100, 200, 300, 400 and 400'. .

請參照第13圖,其繪示依照本發明另一實施例之微機電系統封裝結構50的剖面圖。微機電系統封裝結構50可包括微機電系統聲學感測器500、載板51、殼體12、接墊13、積體電路晶粒14、連接元件55、至少一第一接點15及至少一第二接點16。微機電系統封裝結構50具有與微機電系統封裝結構40相同或相似結構,不同處在於,載板51之結構與載板41之結構不同且連接元件55之結構與連接元件45之結構不同。 Please refer to FIG. 13 , which illustrates a cross-sectional view of a microelectromechanical system packaging structure 50 according to another embodiment of the present invention. The MEMS package structure 50 may include a MEMS acoustic sensor 500, a carrier 51, a housing 12, a pad 13, an integrated circuit die 14, a connecting element 55, at least one first contact 15 and at least one Second contact point 16. The MEMS package structure 50 has the same or similar structure as the MEMS package structure 40 , except that the structure of the carrier board 51 is different from the structure of the carrier board 41 and the structure of the connecting element 55 is different from the structure of the connecting element 45 .

載板51具有一開孔51a,在本實施例中,開孔51a例如是貫孔。微機電系統聲學感測器500配置在載板51上,且基板510 的一部分在位置上對應開孔51a。連接元件55配置在開孔51a,並連接或接觸微機電系統聲學感測器500的基板510。外部訊號源V1可透過連接元件55傳遞給微機電系統聲學感測器500。在本實施例中,連接元件55例如是孔塞,其插入載板51之開孔51a,以緊密微機電系統聲學感測器500之基板510。 The carrier plate 51 has an opening 51a. In this embodiment, the opening 51a is, for example, a through hole. The MEMS acoustic sensor 500 is configured on the carrier board 51, and the substrate 510 A part of the position corresponds to the opening 51a. The connecting element 55 is disposed in the opening 51 a and is connected or contacted with the substrate 510 of the MEMS acoustic sensor 500 . The external signal source V1 can be transmitted to the MEMS acoustic sensor 500 through the connecting element 55 . In this embodiment, the connecting element 55 is, for example, a hole plug, which is inserted into the opening 51 a of the carrier board 51 to tightly connect the substrate 510 of the MEMS acoustic sensor 500 .

在另一實施例中,微機電系統封裝結構50之微機電系統聲學感測器500可改由微機電系統聲學感測器100’、100、200、300、400與400’的任一者取代。 In another embodiment, the MEMS acoustic sensor 500 of the MEMS package structure 50 can be replaced by any one of the MEMS acoustic sensors 100', 100, 200, 300, 400 and 400'. .

第14A圖至第14P圖繪示根據一實施例之微機電系統聲學感測器100的製造方法。 14A to 14P illustrate a manufacturing method of the MEMS acoustic sensor 100 according to an embodiment.

如第14A圖所示,提供基板層110’。在一實施例中,基板層110’例如是矽基底。但本發明實施例不限於此,基板層110’可包括其它合適的半導體材料。 As shown in Figure 14A, a substrate layer 110' is provided. In one embodiment, the substrate layer 110' is, for example, a silicon substrate. However, embodiments of the present invention are not limited thereto, and the substrate layer 110' may include other suitable semiconductor materials.

如第14B圖所示,可採用例如是沉積製程或熱氧化製程,在基板層110’的上表面(或前表面)及下表面(或背表面)上分別形成介電材料層140’與介電材料層145’。沉積製程例如電漿加強型氧化物(PEOX),然此非用以限制本發明實施例。在一實施例中,介電材料層140’與介電材料層145’例如是同時形成。以材質來說,介電材料層140’及/或介電材料層145’例如是包含氧化物,如氧化矽。介電材料層140’與介電材料層145’的材料可相同,然亦可相異。 As shown in FIG. 14B, for example, a deposition process or a thermal oxidation process can be used to form a dielectric material layer 140' and a dielectric layer on the upper surface (or front surface) and lower surface (or back surface) of the substrate layer 110' respectively. Electrical material layer 145'. The deposition process is, for example, plasma enhanced oxide (PEOX), but this is not intended to limit the embodiments of the present invention. In one embodiment, the dielectric material layer 140' and the dielectric material layer 145' are formed at the same time, for example. In terms of materials, the dielectric material layer 140' and/or the dielectric material layer 145' includes, for example, an oxide, such as silicon oxide. The materials of the dielectric material layer 140' and the dielectric material layer 145' may be the same or different.

如14C圖所示,可採用例如是微影製程(photolithography),圖案化介電材料層140’,以形成凹部圖案, 其包含至少一凹部140a。本文的「凹部」例如是包含凹槽及/或貫孔。本文的「微影製程」例如是包含塗佈(coating)(光阻)、曝光、顯影及/或蝕刻等。「凹部」的數量及/或幾何形狀(圖案)可視實際狀況而定,本發明實施例不加以限定。 As shown in Figure 14C, the dielectric material layer 140' can be patterned using, for example, a photolithography process to form a concave pattern. It includes at least one recess 140a. The "recess" herein includes, for example, grooves and/or through holes. The "lithography process" herein includes, for example, coating (photoresist), exposure, development and/or etching. The number and/or geometric shape (pattern) of the "recesses" may depend on the actual situation, and is not limited in the embodiments of the present invention.

如第14D圖所示,可採用例如是沉積製程,形成介電材料層140”於介電材料層140’上,其中介電材料層140”與介電材料層140’合稱介電材料層140'''。介電材料層140'''具有凹部圖案,其包含至少一凹部140a’,凹部140a’順應凹部140a的形狀形成。此外,介電材料層140'''的材料例如是氧化物,如氧化矽(silicon oxide)、二氧化矽(silicon dioxide)、氧化物(oxide)或TEOS氧化物,然此非用以限制本發明實施例。在一實施例中,凹部140a’可定義後續形成之振膜130的結構,但本發明實施例不限於此。介電材料層140”與介電材料層140’的材料可相同,然亦可相異。 As shown in Figure 14D, a deposition process can be used to form a dielectric material layer 140" on the dielectric material layer 140', where the dielectric material layer 140" and the dielectric material layer 140' are collectively referred to as a dielectric material layer. 140'''. The dielectric material layer 140'''' has a recess pattern, which includes at least one recess 140a'. The recess 140a' is formed conforming to the shape of the recess 140a. In addition, the material of the dielectric material layer 140'''' is, for example, an oxide, such as silicon oxide, silicon dioxide, oxide or TEOS oxide, but this is not intended to limit the invention. Inventive Examples. In one embodiment, the recess 140a' may define the structure of the diaphragm 130 formed subsequently, but the embodiment of the present invention is not limited thereto. The materials of the dielectric material layer 140" and the dielectric material layer 140' may be the same or different.

如第14E圖所示,可採用例如是蝕刻製程,形成介至少一凹部140a”。凹部140a”例如是貫穿介電材料層140'''之貫孔。 As shown in FIG. 14E , for example, an etching process can be used to form at least one recess 140 a ″. The recess 140 a ″ is, for example, a through hole penetrating the dielectric material layer 140 ″.

如第14F圖所示,可採用例如是沉積製程,形成振膜層130’於介電材料層140'''且形成元件層135’在介電材料層145’上。振膜層130’具有凹部圖案,其包含至少一凹部130a1。凹部130a1對應凹部140a”的位置形成。元件層135’與振膜層130’可同時形成。此外,振膜層130’及元件層135’的材料可相同,例如是多晶矽(polysilicon)、碳化矽(silicon carbide,SiC)、單晶矽(single crystal)等半導體材料,其可經過離子佈植(ion implantation)或摻雜(doping)等製程使材料產 生導電特性,但本發明實施例不限於此。 As shown in FIG. 14F, for example, a deposition process can be used to form the diaphragm layer 130' on the dielectric material layer 140''' and the element layer 135' on the dielectric material layer 145'. The diaphragm layer 130' has a recess pattern, which includes at least one recess 130a1. The recess 130a1 is formed at a position corresponding to the recess 140a". The element layer 135' and the diaphragm layer 130' can be formed at the same time. In addition, the diaphragm layer 130' and the element layer 135' can be made of the same material, such as polysilicon or silicon carbide. Semiconductor materials such as silicon carbide (SiC) and single crystal can be produced through processes such as ion implantation or doping. produce conductive properties, but the embodiments of the present invention are not limited thereto.

如第14G圖所示,可採用例如是微影製程,形成至少一凹部130a2在第14E圖之振膜層130’中,以形成振膜130。凹部130a2例如是貫穿振膜層130’,而露出介電材料層140'''。在本步驟中,可同時移除元件層135’,以露出介電材料層145’。 As shown in Figure 14G, at least one recess 130a2 can be formed in the diaphragm layer 130' of Figure 14E using, for example, a photolithography process to form the diaphragm 130. The recess 130a2, for example, penetrates the diaphragm layer 130' and exposes the dielectric material layer 140'''. In this step, the element layer 135' can be removed at the same time to expose the dielectric material layer 145'.

如第14H圖所示,可採用例如是沉積製程,形成介電材料層150’在振膜130上且形成介電材料層145”在介電材料層145’上,其中介電材料層150’填充凹部130a2。介電材料層150’可具有凹部圖案,其包含至少一凹部150a1。凹部150a1對應振膜130的凹部130a1形成。介電材料層145”與介電材料層145’合稱為介電材料層145。在一實施例中,介電材料層150’與介電材料層145”例如是同時形成。此外,介電材料層150’及介電材料層145”的材料可相同,例如是氧化物,如氧化矽,但本發明實施例不限於此。 As shown in Figure 14H, a deposition process may be used to form a dielectric material layer 150' on the diaphragm 130 and a dielectric material layer 145" on the dielectric material layer 145', wherein the dielectric material layer 150' Fill the recess 130a2. The dielectric material layer 150' may have a recess pattern, which includes at least one recess 150a1. The recess 150a1 is formed corresponding to the recess 130a1 of the diaphragm 130. The dielectric material layer 145" and the dielectric material layer 145' are collectively referred to as dielectric Layer 145 of electrical material. In one embodiment, the dielectric material layer 150' and the dielectric material layer 145" are formed at the same time. In addition, the dielectric material layer 150' and the dielectric material layer 145" can be made of the same material, such as an oxide, such as Silicon oxide, but embodiments of the present invention are not limited thereto.

如第14I圖所示,可採用例如是微影製程,形成至少一凹部150a2在介電材料層150’中,從而形成突起(dimple)來減少表面黏滯力。 As shown in FIG. 14I, at least one recess 150a2 can be formed in the dielectric material layer 150' using, for example, a photolithography process to form a dimple to reduce surface viscosity.

如第14J圖所示,可採用例如是沉積製程,形成介電材料層150”在第14I圖之介電材料層150’上,並填充凹部150a2。介電材料層150”具有至少一凹部150a3及至少一凹部150a4,其中凹部150a4露出振膜130。在一實施例中,介電材料層150”的材料例如是氧化物,如氧化矽,但本發明實施例不限於此。凹部150a3及凹部150a4可採用利用是微影製程及蝕刻製程形成。 As shown in Figure 14J, a deposition process can be used to form a dielectric material layer 150" on the dielectric material layer 150' in Figure 14I and fill the recessed portion 150a2. The dielectric material layer 150" has at least one recessed portion 150a3. and at least one recessed portion 150a4, wherein the recessed portion 150a4 exposes the diaphragm 130. In one embodiment, the material of the dielectric material layer 150″ is, for example, an oxide, such as silicon oxide, but the embodiment of the present invention is not limited thereto. The recessed portions 150a3 and 150a4 can be formed using a lithography process and an etching process.

如第14K圖所示,可採用例如是沉積製程,形成背板材料120’於介電材料層150”上且形成元件層125’於介電材料層145上,其中背板材料120’填滿凹部150a4以電性連接於振膜130。背板材料120’包含至少一突起120A,其對應凹部150a3形成。此外,背板材料120’與元件層125’可同時形成。此外,背板材料120’與元件層125’的材料可相同,例如是半導體材料,如多晶矽(polysilicon)、碳化矽(silicon carbide;SiC)等半導體材料,其可經過離子佈植(ion implantation)或摻雜(doping)等製程使材料產生導電特性,但本發明實施例不限於此。 As shown in Figure 14K, for example, a deposition process can be used to form the backplane material 120' on the dielectric material layer 150" and to form the device layer 125' on the dielectric material layer 145, wherein the backplane material 120' is filled The recessed portion 150a4 is electrically connected to the diaphragm 130. The backplate material 120' includes at least one protrusion 120A, which is formed corresponding to the recessed portion 150a3. In addition, the backplate material 120' and the element layer 125' can be formed at the same time. In addition, the backplate material 120 The material of the element layer 125 can be the same, for example, a semiconductor material, such as polysilicon (polysilicon), silicon carbide (SiC) and other semiconductor materials, which can be ion implanted or doped (doping). Such processes enable the material to develop conductive properties, but the embodiments of the present invention are not limited thereto.

如第14L圖所示,可採用例如是金屬沉積製程、黃光微影製程,及蝕刻製程或剝離(lift-off)製程等,形成電極層170於背板材料120’上,電極層170可包含二電極,其中之一為振膜電位正極,另一為背板電位負極。 As shown in Figure 14L, the electrode layer 170 can be formed on the backplane material 120' using, for example, a metal deposition process, a photolithography process, an etching process or a lift-off process. The electrode layer 170 can include two Electrodes, one of which is the positive electrode of the diaphragm potential, and the other is the negative electrode of the backplate potential.

如第14M圖所示,可採用例如是微影製程,圖案化背板材料120’,以形成背板120。背板120具有至少一聲孔(acoustic hole)120B。 As shown in FIG. 14M, the backplane material 120' can be patterned using, for example, a photolithography process to form the backplane 120. The back plate 120 has at least an acoustic hole 120B.

如第14N圖所示,可採用例如是蝕刻製程,移除元件層125’,以露出介電材料層145。 As shown in FIG. 14N, the element layer 125' can be removed using, for example, an etching process to expose the dielectric material layer 145.

如第14O圖所示,可採用例如是微影製程,圖案化介電材料層145,以形成至少一凹部145a,其中凹部145a露出基板層110’。 As shown in FIG. 14O, the dielectric material layer 145 can be patterned using, for example, a photolithography process to form at least one recessed portion 145a, wherein the recessed portion 145a exposes the substrate layer 110'.

如第14P圖所示,可採用例如是蝕刻製程,移除基板層 110’的部分材料,以形成基板110。基板110具有至少一第二腔體110r。 As shown in Figure 14P, the substrate layer can be removed using, for example, an etching process. 110′ to form the substrate 110. The substrate 110 has at least one second cavity 110r.

然後,可採用例如是濕蝕刻製程,蝕刻液透過第14P圖之凹部145a及第二腔體110r,移除介電材料,以形成如第1A圖所示之介電層140及介電層150。 Then, for example, a wet etching process can be used, and the etching liquid passes through the recess 145a and the second cavity 110r in Figure 14P to remove the dielectric material to form the dielectric layer 140 and the dielectric layer 150 as shown in Figure 1A .

其餘微機電系統聲學感測器100’、200、300、400’及400的製造方法類似或同於微機電系統聲學感測器100的製造方法,不同處在於採用不同圖案的光罩,形成不同結構的背板、振膜、介電層及/或基板。 The manufacturing methods of the remaining MEMS acoustic sensors 100', 200, 300, 400' and 400 are similar or the same as the manufacturing method of the MEMS acoustic sensor 100. The difference lies in the use of photomasks with different patterns to form different The backplane, diaphragm, dielectric layer and/or substrate of the structure.

請參照第15A~15B圖,其繪示第8圖之微機電系統聲學感測器500的製造過程圖。微機電系統聲學感測器500的製造過程類似或同於微機電系統聲學感測器100,不同處在於基板510的製程。 Please refer to Figures 15A to 15B, which illustrate the manufacturing process diagram of the MEMS acoustic sensor 500 in Figure 8. The manufacturing process of the MEMS acoustic sensor 500 is similar or identical to the MEMS acoustic sensor 100 , except for the manufacturing process of the substrate 510 .

如第15A圖所示,可採用例如是微影蝕刻製程,形成至少一光阻146於介電材料層145的至少一開孔145a’,其中開孔145a’露出基板層510’,且光阻146填滿開孔145a’。 As shown in FIG. 15A, for example, a photolithography process can be used to form at least one photoresist 146 in at least one opening 145a' of the dielectric material layer 145, wherein the opening 145a' exposes the substrate layer 510', and the photoresist 146 fills the opening 145a'.

如第15B圖所示,可採用蝕刻製程,移除光阻146及對應光阻146的基板材料,以於基板層510’形成至少一開孔510a,而形成基板510。 As shown in Figure 15B, an etching process can be used to remove the photoresist 146 and the substrate material corresponding to the photoresist 146 to form at least one opening 510a in the substrate layer 510' to form the substrate 510.

微機電系統聲學感測器500的其餘製造步驟同於或相似於微機電系統聲學感測器100的對應製造步驟,於此不再贅述。 The remaining manufacturing steps of the MEMS acoustic sensor 500 are the same as or similar to the corresponding manufacturing steps of the MEMS acoustic sensor 100 and will not be described again.

以微機電系統封裝結構10的製造方法來說,配置積體電路晶粒14及微機電系統聲學感測器(如100、100’、200、300、400、 400’與500之一者)於載板11上,然後再採用打線製程,以焊線電性連接載板11、積體電路晶粒14及微機電系統聲學感測器,然後再以殼體12配置在載板11,並覆蓋積體電路晶粒14及微機電系統聲學感測器。其餘微機電系統封裝結構20、30、40及50的製造過程類似微機電系統封裝結構10,容此不再贅述。 Taking the manufacturing method of the MEMS packaging structure 10 as an example, the integrated circuit die 14 and MEMS acoustic sensors (such as 100, 100', 200, 300, 400, 400' or 500') on the carrier board 11, and then use a wire bonding process to electrically connect the carrier board 11, the integrated circuit die 14 and the MEMS acoustic sensor with welding wires, and then use the casing 12 is configured on the carrier board 11 and covers the integrated circuit die 14 and the MEMS acoustic sensor. The manufacturing processes of the other MEMS packaging structures 20 , 30 , 40 and 50 are similar to the MEMS packaging structure 10 , and will not be described again.

綜上所述,雖然本發明已以實施例揭露如上,然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾。因此,本發明之保護範圍當視後附之申請專利範圍所界定者為準。 In summary, although the present invention has been disclosed in the above embodiments, they are not intended to limit the present invention. Those with ordinary knowledge in the technical field to which the present invention belongs can make various modifications and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the appended patent application scope.

110:基板 110:Substrate

110w:內側壁 110w: inner wall

112:突出部 112:Protrusion

120:背板 120:Back panel

130:振膜 130:Diaphragm

131:振動部 131:Vibration Department

1313:貫孔 1313:Through hole

140,150:介電層 140,150: Dielectric layer

140r:第一腔體 140r: first cavity

160A,160B2:連接部 160A,160B2:Connection part

160C1:限位部 160C1: Limiting part

170:電極層 170:Electrode layer

V1:外部訊號源 V1: external signal source

Claims (18)

一種微機電系統聲學感測器,包括:一基板;一背板,一振膜,配置於該基板與該背板之間且包括一振動部;一介電層,形成於該基板與該振膜之間且具有一對應該振動部的一第一腔體;以及一連接部,位於該第一腔體內且連接該振動部與該基板;其中,該基板具有一第二腔體且包括一承載部,該第二腔體與該第一腔體的位置相對應,該承載部相對該第二腔體之一側壁突出,該連接部位於該振動部與該基板之間;其中,該基板更包括一突出部,該突出部從該側壁往該承載部的方向延伸且連接於該承載部;該突出部的寬度大於該承載部的寬度。 A micro-electromechanical system acoustic sensor includes: a substrate; a back plate and a diaphragm, which are arranged between the substrate and the back plate and include a vibration part; a dielectric layer formed between the substrate and the vibrator There is a first cavity between the membranes corresponding to the vibration part; and a connecting part located in the first cavity and connecting the vibration part and the substrate; wherein the substrate has a second cavity and includes a The bearing part, the position of the second cavity corresponds to the first cavity, the bearing part protrudes relative to one side wall of the second cavity, and the connecting part is located between the vibration part and the substrate; wherein, the substrate It further includes a protruding portion extending from the side wall toward the bearing portion and connected to the bearing portion; the width of the protruding portion is greater than the width of the bearing portion. 如請求項1所述之微機電系統聲學感測器,其中該連接部係柱狀體。 The microelectromechanical system acoustic sensor as claimed in claim 1, wherein the connecting part is a columnar body. 如請求項1所述之微機電系統聲學感測器,其中該連接部位於該振動部的中間區域。 The MEMS acoustic sensor of claim 1, wherein the connecting part is located in the middle area of the vibrating part. 如請求項1所述之微機電系統聲學感測器,其中該連接部位於該振動部的邊緣區域。 The microelectromechanical system acoustic sensor of claim 1, wherein the connecting portion is located in an edge area of the vibrating portion. 如請求項1所述之微機電系統聲學感測器,其中該振動部具有一彈簧結構,該連接部連接該彈簧結構。 The MEMS acoustic sensor of claim 1, wherein the vibrating part has a spring structure, and the connecting part is connected to the spring structure. 如請求項1所述之微機電系統聲學感測器,其中該基板具有一開孔,該開孔形成於該突出部。 The microelectromechanical system acoustic sensor of claim 1, wherein the substrate has an opening formed in the protruding portion. 如請求項1所述之微機電系統聲學感測器,其中該振膜具有一通道,該通道與該突出部在位置上相對應。 The MEMS acoustic sensor of claim 1, wherein the diaphragm has a channel corresponding in position to the protrusion. 如請求項1所述之微機電系統聲學感測器,其中該振膜具有一通道,該通道與該第一腔體相通。 The microelectromechanical system acoustic sensor of claim 1, wherein the diaphragm has a channel, and the channel communicates with the first cavity. 如請求項1所述之微機電系統聲學感測器,其中該連接部包括:一支撐部;一包覆部,包覆該支撐部。 The microelectromechanical system acoustic sensor according to claim 1, wherein the connecting part includes: a supporting part; and a covering part covering the supporting part. 如請求項9所述之微機電系統聲學感測器,該包覆部與該振膜的材料相同。 As for the microelectromechanical system acoustic sensor of claim 9, the covering part and the diaphragm are made of the same material. 如請求項1所述之微機電系統聲學感測器,其中該連接部與該介電層的材料相同。 The MEMS acoustic sensor of claim 1, wherein the connecting portion and the dielectric layer are made of the same material. 如請求項1所述之微機電系統聲學感測器,其中該基板具有一下表面及一開孔,該開孔從該基板之該下表面往上延伸。 The MEMS acoustic sensor of claim 1, wherein the substrate has a lower surface and an opening extending upward from the lower surface of the substrate. 如請求項1所述之微機電系統聲學感測器,其中該振動部具有突出結構及/或鏤空結構。 The MEMS acoustic sensor according to claim 1, wherein the vibrating part has a protruding structure and/or a hollow structure. 一種微機電系統封裝結構,包括:一載板;以及 如請求項1~13之任一項所述的微機電系統聲學感測器,配置在該載板上。 A microelectromechanical system packaging structure, including: a carrier board; and The microelectromechanical system acoustic sensor according to any one of claims 1 to 13 is configured on the carrier board. 如請求項14所述之微機電系統封裝結構,其中該載板具有一開孔,該微機電系統封裝結構更包括:一連接元件,配置在該開孔,且連接該微機電系統聲學感測器的該基板。 The microelectromechanical system packaging structure of claim 14, wherein the carrier board has an opening, and the microelectromechanical system packaging structure further includes: a connecting element disposed in the opening and connected to the microelectromechanical system acoustic sensor the base plate of the device. 如請求項15所述之微機電系統封裝結構,其中該開孔係盲孔或貫孔。 The microelectromechanical system packaging structure as claimed in claim 15, wherein the opening is a blind hole or a through hole. 一種微機電系統聲學感測器之製造方法,包括:形成一介電材料層於一基板層上;形成一振膜於該介電材料層上;形成一背板於該振膜,其中該振膜位於該基板層與該背板之間且包括一振動部;形成一第二腔體於該基板層,以形成一基板,其中該第二腔體露出該介電材料層;以及透過該基板之該第二腔體,移除該介電材料層的部分材料,以形成一介電層及一連接部,其中該介電層位於該基板與該振膜之間且具有一對應該振動部的一第一腔體,且該連接部位於該第一腔體內且連接該振動部與該基板;其中,該基板包括一承載部,該第二腔體與該第一腔體的位置相對應,該承載部相對該第二腔體之一側壁突出,該連接部位於該振動部與該基板之間; 其中,該基板更包括一突出部,該突出部從該側壁往該承載部的方向延伸且連接於該承載部;該突出部的寬度大於該承載部的寬度。 A manufacturing method of a microelectromechanical system acoustic sensor, including: forming a dielectric material layer on a substrate layer; forming a diaphragm on the dielectric material layer; forming a back plate on the diaphragm, wherein the diaphragm The film is located between the substrate layer and the backplane and includes a vibrating portion; forming a second cavity in the substrate layer to form a substrate, wherein the second cavity exposes the dielectric material layer; and through the substrate In the second cavity, part of the material of the dielectric material layer is removed to form a dielectric layer and a connection part, wherein the dielectric layer is located between the substrate and the diaphragm and has a corresponding vibration part a first cavity, and the connecting part is located in the first cavity and connects the vibration part and the substrate; wherein, the substrate includes a bearing part, and the second cavity corresponds to the position of the first cavity , the bearing part protrudes relative to one side wall of the second cavity, and the connecting part is located between the vibrating part and the base plate; Wherein, the base plate further includes a protruding portion extending from the side wall toward the bearing portion and connected to the bearing portion; the width of the protruding portion is greater than the width of the bearing portion. 如請求項17所述之製造方法,其中於形成該第二腔體於該基板層之步驟中,該基板具有一開孔,該開孔形成於該突出部。 The manufacturing method of claim 17, wherein in the step of forming the second cavity in the substrate layer, the substrate has an opening, and the opening is formed in the protruding portion.
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