TWI834968B - Micro-electro-mechanical system acoustic sensor, micro-electro-mechanical system package structure and method for manufacturing the same - Google Patents

Abstract

A MEMS acoustic sensor includes a substrate, a back plate, a diaphragm, a dielectric layer and a connected portion. The diaphragm is disposed between the substrate and the back plate and includes a vibration portion. The dielectric layer is formed between the substrate and the diaphragm and has a cavity corresponding to the vibrating portion. The connected portion is located in the cavity and connects the vibrating portion and the substrate.

Description

Microelectromechanical system acoustic sensor, microelectromechanical system packaging structure and its Manufacturing method

The invention relates to a micro-electromechanical system acoustic sensor, a micro-electromechanical system packaging structure and a manufacturing method thereof.

Voice communication systems and speech recognition systems usually use acoustic microphones to pick up the user's words through the sound waves generated by the user's speech. Current technology uses both bone and tissue vibration-sensing sensors in the ear canal (to respond to bone-conducted lower speech frequency sounds) and limited-bandwidth acoustic microphones (to detect weaker airborne higher speech frequencies) of sound) in-ear microphone systems for both. The vibration sensing sensor can be an accelerometer, which can be fixedly mounted on the inner wall of the earphone casing through appropriate adhesive or glue.

Therefore, the present invention proposes a microelectromechanical system acoustic sensor, a microelectromechanical system packaging structure and a manufacturing method thereof, which can improve conventional problems.

An embodiment of the present invention provides a micro-electromechanical system acoustic sensor. The microelectromechanical system acoustic sensor includes a substrate, a backplane, a diaphragm, a dielectric layer and a connection department. The diaphragm is arranged between the base plate and the back plate and includes a vibrating part. The dielectric layer is formed between the substrate and the diaphragm and has a first cavity corresponding to the vibration part. The connection part is located in the first cavity and connects the vibration part and the substrate.

Another embodiment of the present invention provides a microelectromechanical system packaging structure. The MEMS packaging structure includes a carrier board and a MEMS acoustic sensor. The MEMS acoustic sensor is configured on the carrier board. The microelectromechanical system acoustic sensor includes a substrate, a backplane, a diaphragm, a dielectric layer and a connection part. The diaphragm is arranged between the base plate and the back plate and includes a vibrating part. The dielectric layer is formed between the substrate and the diaphragm and has a first cavity corresponding to the vibration part. The connection part is located in the first cavity and connects the vibration part and the substrate.

Another embodiment of the present invention provides a method for manufacturing a microelectromechanical system acoustic sensor. The manufacturing method includes the following steps: forming a dielectric material layer on a substrate layer; forming a diaphragm on the dielectric material layer; forming a back plate on the diaphragm, wherein the diaphragm is located between the substrate layer and the back plate and includes a vibration part; forming a second cavity in the substrate layer to form a substrate, wherein the cavity exposes the dielectric material layer; and, through the cavity of the substrate, removing part of the dielectric material layer to form a dielectric An electrical layer and a connecting part, wherein the dielectric layer is located between the substrate and the diaphragm and has a first cavity corresponding to the vibrating part, and the connecting part is located in the first cavity and connects the vibrating part and the substrate.

In order to have a better understanding of the above and other aspects of the present invention, examples are given below and are described in detail with reference to the accompanying drawings:

10,20,30,40,50: MEMS packaging structure

11,31,41,51: Carrier board

12: Shell

13: Pad

14:Integrated circuit die

15:First contact

16: Second contact

41a,51a: opening

45,55:Connecting elements

21A, 31A: Bearing group

25:Connecting line

31a:Through hole

100,100’,200,300,400,500: MEMS acoustic sensor

110,110A,110’,210,310,310’,410,510:Substrate

110’, 510’: substrate layer

110r, 210r, 310r: second cavity

110w: inner wall

111,211,311: Bearing part

112,212,312:Protrusion

120:Back panel

120’: back plate material

125’: component layer

130,330:Diaphragm

130’:Diaphragm layer

131:Vibration Department

1311:Corrugated layer

1312:ribs

1313:Through hole

132A, 132B, 132C, 331: Covering part

140,150: Dielectric layer

130a1,130a2,140a,140a’,140a”,120a,145a,150a1,150a2,150a3,150a4: concave part

140’,140”,140''’,145,150”,150’: dielectric material layer

140r: first cavity

141,142: Support part

146:Photoresist

160A, 160A’, 160B1, 160B2, 260, 460: connection part

160C1: Limiting part

170:Electrode layer

210w, 310w: side wall

330a: Channel

120A:Protrusion

510a, 145a’, 330b: opening

SP1: interval

R1: Accommodation space

V1: external signal source

Figure 1A shows a partial cross-sectional view of a microelectromechanical system acoustic sensor along the direction 1A-1A' (the direction 1A-1A' is shown in Figure 1C) according to an embodiment of the present invention.

Figure 1B shows a partial cross-sectional view of the MEMS acoustic sensor along the direction 1B-1B' (the direction 1B-1B' is shown in Figure 1C) according to an embodiment of the present invention.

Figure 1C shows a top view of the substrate of the MEMS acoustic sensor of Figure 1A (the diaphragm and dielectric layer are shown with dotted lines in Figure 1C).

Figure 2A shows a partial cross-sectional view of a MEMS acoustic sensor along the direction 2A-2A' according to another embodiment of the present invention.

Figure 2B shows a top view of the substrate of the MEMS acoustic sensor of Figure 2A.

Figure 3A illustrates a partial cross-sectional view along the direction 3A-3A' of a MEMS acoustic sensor according to another embodiment of the present invention.

Figure 3B illustrates a partial cross-sectional view of the MEMS acoustic sensor along the direction 3B-3B' according to an embodiment of the present invention.

Figure 3C shows a top view of the substrate of the MEMS acoustic sensor of Figure 3A.

FIG. 4 is a schematic diagram of an MEMS acoustic sensor according to another embodiment of the invention.

FIG. 5 is a schematic diagram of an MEMS acoustic sensor according to another embodiment of the invention.

FIG. 6 shows a top view of a substrate of an MEMS acoustic sensor according to another embodiment of the present invention.

Figure 7A illustrates a partial cross-sectional view along the direction 7A-7A' of a MEMS acoustic sensor according to another embodiment of the present invention.

Figure 7B shows a top view of the substrate of the MEMS acoustic sensor of Figure 7A.

FIG. 8 illustrates a partial cross-sectional view of an MEMS acoustic sensor according to another embodiment of the present invention.

Figure 9 illustrates a cross-sectional view of a microelectromechanical system packaging structure according to an embodiment of the present invention.

Figure 10 is a cross-sectional view of a microelectromechanical system packaging structure according to another embodiment of the present invention.

Figure 11 is a cross-sectional view of a microelectromechanical system packaging structure according to another embodiment of the present invention.

Figure 12 illustrates a cross-sectional view of a microelectromechanical system packaging structure according to another embodiment of the present invention.

Figure 13 is a cross-sectional view of a microelectromechanical system packaging structure according to another embodiment of the present invention.

Figures 14A to 14P illustrate a method of manufacturing a microelectromechanical system acoustic sensor according to an embodiment.

Figures 15A~15B illustrate the manufacturing process diagram of the MEMS acoustic sensor in Figure 8.

Please refer to Figures 1A to 1C. Figure 1A illustrates a partial cross-section of the MEMS acoustic sensor 100 along the direction 1A-1A' (the direction 1A-1A' is shown in Figure 1C) according to an embodiment of the present invention. Figure 1B illustrates a micro-electromechanical system according to an embodiment of the present invention. A partial cross-sectional view of the acoustic sensor 100 along the direction 1B-1B' (the direction 1B-1B' is shown in Figure 1C), and Figure 1C shows the substrate 110 of the MEMS acoustic sensor 100 in Figure 1A (the diaphragm 130 and the dielectric layer 140 are shown with dotted lines in Figure 1C).

The microelectromechanical system acoustic sensor 100 can be applied to vibration detectors, microphones, sound-collecting devices, etc., for example. The microelectromechanical system acoustic sensor 100 or the microelectromechanical system package structure using it can be configured in headphones, cars, wheels, home appliances, industrial instruments and equipment, etc. to perform vibration analysis based on the received vibration (such as audio, vibration) items.

The microelectromechanical system acoustic sensor 100 includes a substrate 110, a backplane 120, a diaphragm 130, dielectric layers 140 and 150, at least one connection part (for example, connection parts 160A, 160B1 and 160B2, a limiting part 160C1 and an electrode layer 170 The diaphragm 130 is disposed between the substrate 110 and the back plate 120 and includes a vibrating part 131. The dielectric layer 140 is formed between the substrate 110 and the diaphragm 130 and has a first cavity 140r corresponding to the vibrating part 131. Connection The parts 160A, 160B1 and 160B2 and the limiting part 160C1 are located in the first cavity 140r and connect the vibrating part 131 and the substrate 110. In this way, the external signal source V1 can be transmitted to the diaphragm 130 through the connecting part, causing the diaphragm 130 to vibrate up and down. The external signal source V1 is, for example, a vibration wave. The external signal source V1 can be transmitted to the diaphragm 130 through solid or air. In this embodiment, the external signal source V1 can be transmitted to the diaphragm 130 through the substrate 110 (called solid-state conduction).

The substrate 110 is, for example, a silicon substrate, a silicon wafer, or other suitable semiconductor materials, but embodiments of the present invention are not limited thereto. The back plate 120 and the diaphragm 130 may include polycrystalline silicon material, but embodiments of the present invention are not limited thereto. The dielectric layers 140 and 150 are, for example, oxide layers. The dielectric layer 150 is formed between the back plate 120 and the diaphragm 130 to form a gap SP1 between the back plate 120 and the diaphragm 130 . When the external signal source V1 is transmitted to the MEMS acoustic sensor At 100 , the external signal source V1 can be transmitted to the diaphragm 130 through the connecting portion, causing the diaphragm 130 to vibrate relative to the back plate 120 within the interval SP1. The gap SP1 can be filled with air, so the gap SP1 can be called an air gap. The electrode layer 170 can be electrically connected to the diaphragm 130 and the back plate 120 . When the external signal source V1 is transmitted to the MEMS acoustic sensor 100, the distance between the diaphragm 130 and the back plate 120 changes with the vibration (the capacitance value changes), and the corresponding voltage signal is transmitted to a processor through the electrode layer 170 A processor (not shown) analyzes/processes this voltage signal and performs corresponding actions accordingly.

As shown in FIG. 1A , the external signal source V1 is transmitted to the diaphragm 130 through the substrate 110 , the connection part and the dielectric layer 140 in sequence. The connection portion connects the substrate 110 and the diaphragm 130 and serves as an intermediary station for the external signal source V1 to be transmitted to the diaphragm 130, playing a key role in the sensitivity of the MEMS acoustic sensor 100 in detecting or sensing the external signal source V1.

As shown in Figures 1A and 1C, the substrate 110 has a second cavity 110r, and includes a carrying portion 111 and at least one protruding portion 112. The protruding portion 112 extends from the inner wall 110w of the second cavity 110r toward the carrying portion 111. protruding and connected to the carrying part 111 . The protruding portion 112 can increase the overall strength of the substrate 110 and improve the yield of subsequent packaging processes. Specifically, during the subsequent packaging process, the MEMS acoustic sensor 100 will withstand a certain external force when it is disposed on a carrier board. Therefore, the MEMS acoustic sensor 100 with sufficient strength can be safely disposed on the carrier board. In another embodiment, if there is no strength consideration, the protruding portion 112 of the substrate 110 may be omitted.

In addition, the geometric structure of the vibrating part 131 can adjust/change the stiffness of the diaphragm 130 to obtain desired vibration detection characteristics, such as sensitivity to different vibration frequencies and/or increasing the detection bandwidth. Specifically, as shown in Figure 1A, the vibrating part 131 includes at least one stiffness adjustment structure, which is, for example, a protruding structure (such as a rib (to strengthen the stiffness and prevent the diaphragm from warping), a protruding point (to strengthen the stiffness and prevent the diaphragm from warping), and a corrugated layer (to weaken the stiffness). , such as a spring) or a hollow structure (such as a blind hole or a through hole, etc. (which weakens the stiffness and can release the stress, allowing vibration to be easily transmitted to the diaphragm 130). Embodiments of the present invention are not limited to protruding structures and/or hollows The shape, number and/or size of the structure. The hollow structure can be a closed ring (such as the through hole 1313 in Figure 1C) or an open ring.

In this embodiment, as shown in FIG. 1A , the vibration part 131 includes a corrugated layer 1311 , a rib 1312 and a through hole 1313 . The through hole 1313 is, for example, in a closed ring shape (viewed from the perspective of FIG. 1C ). The stiffness of the diaphragm 130 can be adjusted/changed through the stiffness adjustment structure, and expected characteristics of the MEMS acoustic sensor 100 can be obtained, such as sensitivity to different vibration frequencies and/or increased detection bandwidth. In addition, the greater the number and/or the larger the distribution area of the protruding structures, the greater the stiffness of the substrate 110; conversely, the smaller the stiffness. The greater the number of hollow structures and/or the larger the distribution area, the smaller the stiffness of the substrate 110 will be; vice versa, the stiffer the stiffness will be. In another embodiment, the diaphragm 130 or the vibrating part 131 may also be a flat film, that is, the diaphragm 130 or the vibrating part 131 may not include any grooves, through holes, and/or protruding structures, etc.

In addition, the design of the connection part can adjust/change the stiffness of the diaphragm 130 so that the MEMS acoustic sensor 100 meets expected characteristics, such as sensitivity to different vibration frequencies and/or increasing the detection bandwidth. In addition, at least a part of all connection parts in the embodiment of the present invention can be regarded as an anchor, which provides the function of supporting/fixing the diaphragm 130 . In addition, the greater the number of connecting parts and/or the larger the distribution area, the greater the stiffness of the diaphragm 130 or the vibrating part 131; conversely, the smaller the stiffness.

In terms of geometric shape, as shown in Figures 1A and 1C, the connecting portion 160A The connecting portion 160B2 is, for example, a columnar body, such as a cylinder. The connecting portion 160B1 is, for example, an annular cylinder, which can surround the connecting portion 160A. The limiting part 160C1 is, for example, an annular cylinder, such as a closed annular cylinder or an open annular cylinder.

In terms of position, as shown in FIGS. 1A and 1C , the position of the connecting portion can correspond to any area of the vibrating portion 131 . For example, the connecting portion 160A is located in the middle area of the vibrating portion 131 , and the connecting portions 160B1 and 160B2 can be located in the edge areas of the vibrating portion 131 .

In terms of structure, as shown in FIGS. 1A and 1C , the limiting portion 160C1 is, for example, a solid portion, which is formed of a single material, such as the material of the diaphragm 130 . The connecting part 160B1 is, for example, a multi-layer structure, which includes a first coating part 132A, a second coating part 132B and a support part 141, where the first coating part 132A and the second coating part 132B respectively cover the opposite sides of the support part 141. Two sides. The connecting parts 160A and 160B2 are, for example, multi-layer structures, which include a covering part 132C and a supporting part 142, wherein the covering part 132C covers the supporting part 142. The position of the limiting portion 160C1 can determine the position of the sidewall of the dielectric layer 140 .

In terms of materials, the connection portion may include the material of the dielectric layer 140 and/or the material of the diaphragm 130 . For example, taking the connection part 160A as an example, the support part 142 of the connection part 160A is a part of the dielectric layer 140 (the material is the same), and the covering part 132C is a part of the diaphragm 130 (the material is the same), where the support part 142 and the dielectric layer 142 are part of the diaphragm 130 . The electrical layer 140 has a same-layer structure (or an integrally formed structure), and the covering portion 132C and the diaphragm 130 have a same-layer structure (or an integrally formed structure). Taking the connection part 160B1 as an example, the connection part 160B1 is composed of a part of the dielectric layer 140 and a part of the diaphragm 130. For example, the first covering part 132A and the second covering part 132B are parts of the diaphragm 130 (the materials are the same). , the first covering part 132A, the second covering part 132B The diaphragm 130 and the diaphragm 130 may be of the same layer structure (or integrally formed structure), and the support part 141 is a part of the dielectric layer 140 (same material). The support part 141 is the dielectric layer 140 and may be of the same layer structure (or an integral structure) formed structure). The connecting portion 160B2 has a material design similar to that of the connecting portion 160A, which will not be described again. In addition, the limiting part 160C1 is, for example, a part of the diaphragm 130 (made of the same material), and the limiting part 160C1 and the diaphragm 130 may be of the same layer structure (or integrally formed structure).

Embodiments of the present invention do not limit the shape, position, material, number of layers (single layer or multi-layer) and/or size of the connecting portion, as long as the MEMS acoustic sensor 100 meets the expected characteristics. The MEMS acoustic sensor 100 may include at least one connection part, and at least two of the several connection parts may have completely identical, partially identical or different designs.

Please refer to Figures 2A~2B. Figure 2A illustrates the MEMS acoustic sensor 100' along the direction 2A-2A' (the direction 2A-2A' is shown in Figure 2B) according to another embodiment of the present invention. A partial cross-sectional view, and Figure 2B shows a top view of the substrate 210 of the MEMS acoustic sensor 100' of Figure 2A.

The microelectromechanical system acoustic sensor 100' can be applied to, for example, vibration detectors, microphones, radio equipment, etc. The MEMS acoustic sensor 100' or the MEMS package structure using it can be configured in headphones, cars, wheels, home appliances or industrial equipment to vibrate based on the received vibrations (eg, generated by audio, vibration) Items analyzed.

The MEMS acoustic sensor 100' includes a substrate 110A, a back plate 120, a diaphragm 130, dielectric layers 140 and 150, at least one connection portion (for example, the connection portion 160A') and an electrode layer 170. The diaphragm 130 is disposed between the substrate 110A and the back plate 120 and includes a vibrating portion 131 . The dielectric layer 140 is formed between the substrate 110A and the diaphragm 130 and has a Corresponding to the first cavity 140r of the vibration part 131. The connection part 160A' is located in the first cavity 140r and connects the vibration part 131 and the bearing part 111 of the substrate 110A. In this way, the external signal source V1 can be transmitted to the diaphragm 130 through the connecting portion 160A', causing the diaphragm 130 to vibrate up and down. In this embodiment, when the lower part of the bearing part 111 is in the air, the external signal source V1 will vibrate the bearing part 111 (generating acceleration), and this vibration is transmitted to the diaphragm 130 through the connecting part 160A'.

The MEMS acoustic sensor 100' has similar or identical technical features to the MEMS acoustic sensor 100 mentioned above. The difference is that the MEMS acoustic sensor 100' can omit any of the connecting parts 160A, 160B1 and 160B2. One or some, for example, the connection portions 160B1 and 160B2 are omitted, and the structure of the connection portion 160A' is different from the structure of the connection portion 160A of the MEMS acoustic sensor 100 , and the substrate 110A can omit the protruding portion 112 .

As shown in Figure 2A, compared with the connecting portion 160A, the connecting portion 160A' of this embodiment can omit the covering portion 132C. The covering portion 132C is a part of the diaphragm 130 (the material is the same), and the covering portion 132C and the diaphragm are The film 130 has a same-layer structure (or an integrally formed structure).

Please refer to Figures 3A to 3C. Figure 3A illustrates a part of the MEMS acoustic sensor 200 along the direction 3A-3A' (the direction 3A-3A' is shown in Figure 3C) according to another embodiment of the present invention. Cross-sectional view, Figure 3B shows a partial cross-sectional view of the MEMS acoustic sensor 200 along the direction 3B-3B' (the direction 3B-3B' is shown in Figure 3C) according to an embodiment of the present invention, and Figure 3C The figure shows a top view of the substrate 210 of the MEMS acoustic sensor 200 in FIG. 3A (the dielectric layer 140 is shown as a dotted line in FIG. 3C).

The microelectromechanical system acoustic sensor 200 can be applied to vibration detectors, microphones, sound-collecting devices, etc., for example. Microelectromechanical system acoustic sensor 200 or its micro The electromechanical system packaging structure can be configured in headphones, cars, wheels, home appliances, industrial instruments and other items that perform vibration analysis based on the received vibration (such as audio, vibration generated).

The MEMS acoustic sensor 200 includes a substrate 210, a back plate 120, a diaphragm 130, dielectric layers 140 and 150, at least one connection portion 260 and an electrode layer 170. The MEMS acoustic sensor 200 has technical features similar to or identical to the aforementioned MEMS acoustic sensor 100 , except that the structure of the substrate 210 of the MEMS acoustic sensor 200 is different from the structure of the substrate 110 .

The diaphragm 130 is disposed between the substrate 210 and the back plate 120 and includes a vibrating portion 131 . The dielectric layer 140 is formed between the substrate 210 and the diaphragm 130 and has a first cavity 140r corresponding to the vibrating part 131 . The connection part 260 is located in the first cavity 140r and connects the vibration part 131 and the substrate 210. In this way, the external signal source V1 can be transmitted to the diaphragm 130 through the connecting portion, causing the diaphragm 130 to vibrate up and down.

As shown in FIG. 3A , the substrate 210 has a second cavity 210r and includes at least one carrying portion 211 and at least one protruding portion 212 . The position of the second cavity 210r corresponds to that of the first cavity 140r, and the bearing portion 211 extends toward the center of the second cavity 210r relative to the side wall 210w of the second cavity 210r. As shown in FIG. 3B , the connecting portion 260 is located between the vibrating portion 131 and the bearing portion 211 of the substrate 210 , and connects the vibrating portion 131 and the bearing portion 211 . In this embodiment, the connecting portion 260 is a solid column located at the edge area of the vibrating portion 131 of the diaphragm 130 . In addition, the connection portion 260 is, for example, a part of the dielectric layer 140 , and the connection portion 260 and the dielectric layer 140 can be a same-layer structure (or an integrally formed structure).

Each protruding portion 212 connects the corresponding bearing portion 211 and the side wall 210w. In this embodiment, the width W1 of the protruding portion 212 is smaller than the width W2 of the carrying portion 211 . this In addition, the connected protruding portion 212 and the bearing portion 211 form a bearing group 21A. The embodiment of the present invention takes four bearing groups 21A as an example, but it can also be less than four groups or more than four groups. In addition, several bearing groups 21A may be evenly distributed relative to the center of the second cavity 210r. For example, the angles between two adjacent bearing groups 21A relative to the center of the second cavity 210r are substantially equal.

Please refer to Figure 4, which is a schematic diagram of a MEMS acoustic sensor 300 according to another embodiment of the present invention. The upper part of Figure 4 shows the MEMS acoustic sensor 300 along the direction 4A-4A' ( The direction 4A-4A' is shown at the bottom of Figure 4), and the bottom of Figure 4 shows a top view of the substrate 310 of the MEMS acoustic sensor 300 (the channel 330a of the diaphragm 330 and the dielectric layer 140 (shown with dashed lines).

The microelectromechanical system acoustic sensor 300 can be applied to vibration detectors, microphones, sound-collecting devices, etc., for example. The microelectromechanical system acoustic sensor 300 or the microelectromechanical system package structure using it can be configured in headphones, cars, wheels, home appliances, industrial instruments and equipment, etc. to perform vibration analysis based on the received vibration (such as audio, vibration generation) items.

The MEMS acoustic sensor 300 includes a substrate 310, a back plate 120, a diaphragm 330, dielectric layers 140 and 150, and at least one connection portion 260. The diaphragm 330 is disposed between the substrate 310 and the back plate 120 and includes a vibrating portion 131 . The dielectric layer 140 is formed between the substrate 310 and the diaphragm 330 and has a first cavity 140r corresponding to the vibrating part 131 . The connection part 260 is located in the first cavity 140r and connects the vibration part 131 and the substrate 310. In this way, the external signal source V1 can be transmitted to the diaphragm 130 through the connecting portion, causing the diaphragm 130 to vibrate up and down.

The MEMS acoustic sensor 300 has technical features similar to or identical to the aforementioned MEMS acoustic sensor 200 , except that the structure of the substrate 310 of the MEMS acoustic sensor 300 is different from the structure of the substrate 210 .

As shown in FIG. 4 , the substrate 310 has a second cavity 310r and includes at least one carrying portion 311 and at least one protruding portion 312 . The position of the second cavity 310r corresponds to that of the first cavity 140r, and the bearing portion 311 extends toward the center of the second cavity 310r relative to one side wall 310w of the second cavity 310r. The connection part 260 is located between the vibration part 131 and the bearing part 311 of the substrate 310 . In this embodiment, as shown in FIG. 4 , the connecting portion 260 is a solid column located at the edge area of the vibrating portion 131 of the diaphragm 330 .

As shown in FIG. 4 , the protruding portion 312 protrudes relative to the side wall 310 w and connects the bearing portion 311 and the side wall 310 w. The protruding portion 312 has a width W3 which is greater than the width W4 of the carrying portion 311 . In addition, the diaphragm 330 has at least one channel 330a. The channel 330a is positionally corresponding to the protrusion 312 and communicates with the first cavity 140r. In this way, during the process of etching the dielectric layer 140, the etching liquid can move through the channel 330a. Remove the material of dielectric layer 140 . In this embodiment, the top view shape of the channel 330a is, for example, a circle, but it may also be an ellipse or a polygon. In this embodiment, each channel 330a is, for example, a single-point design, or may also be extended into a linear shape, such as a curve, a straight line, or a combination thereof. As long as the desired structure/pattern of the dielectric layer 140 can be obtained, embodiments of the present invention do not limit the number, size and/or geometry of the channels 330a. In addition, the channel 330a can be used as a stiffness adjustment structure (eg, a hollow structure), which can weaken the stiffness, release stress, and allow vibration to be easily transmitted to the diaphragm 130.

In addition, the connected protruding portion 312 and the bearing portion 311 form a bearing group 31A. The embodiment of the present invention takes four bearing groups 31A as an example, but it can also be less than four groups or more than four groups. In addition, several bearing groups 31A may be evenly distributed relative to the center of the second cavity 310r. For example, the angles between two adjacent bearing groups 31A relative to the center of the second cavity 210r are substantially equal.

Please refer to Figure 5, which illustrates a schematic diagram of a MEMS acoustic sensor 400 according to another embodiment of the present invention. The upper part of Figure 5 shows the MEMS acoustic sensor 400 along the direction 5A-5A' ( The direction 5A-5A' is shown in the lower part of Figure 5), and the lower part of Figure 5 shows a top view of the substrate 310 of the MEMS acoustic sensor 400 (the channel 330a of the diaphragm 330 and the dielectric layer 140 (shown with dashed lines).

The microelectromechanical system acoustic sensor 400 can be applied to vibration detectors, microphones, sound-collecting devices, etc., for example. The microelectromechanical system acoustic sensor 400 or the microelectromechanical system package structure using it can be configured in headphones, cars, wheels, home appliances, industrial instruments and equipment, etc. to perform vibration analysis based on the received vibration (such as audio, vibration) items.

The MEMS acoustic sensor 400 includes a substrate 310, a back plate 120, a diaphragm 330, dielectric layers 140 and 150, and at least one connection portion 460. The diaphragm 330 is disposed between the substrate 310 and the back plate 120 and includes a vibration part 131 . The dielectric layer 140 is formed between the substrate 310 and the diaphragm 330 and has a first cavity 140r corresponding to the vibrating part 131 . The connection part 460 is located in the first cavity 140r and connects the vibration part 131 and the substrate 310. In this way, the external signal source V1 can be transmitted to the diaphragm 330 through the connecting portion, causing the diaphragm 330 to vibrate up and down.

The MEMS acoustic sensor 400 has technical features similar to or identical to the aforementioned MEMS acoustic sensor 300 . The difference lies in the structure of the connecting portion 460 of the MEMS acoustic sensor 400 and the structure of the connecting portion 260 . Different.

As shown in FIG. 5 , the substrate 310 has a second cavity 310r and includes at least one carrying portion 311 and at least one protruding portion 312 . The position of the second cavity 310r corresponds to that of the first cavity 140r, and the bearing portion 311 extends toward the center of the second cavity 310r relative to the side wall 310w of the second cavity 310r. As shown in Figure 5, the connecting portion 460 is located between the vibrating portion 131 and the base The vibration part 131 and the base plate 310 are connected between the bearing parts 311 of the plate 310 . In this embodiment, the connecting portion 460 is a multi-layered solid column located at the edge area of the vibrating portion 131 of the diaphragm 330 . The connecting part 460 includes a covering part 331 and a supporting part 141 , where the covering part 331 covers the peripheral surface of the supporting part 141 . In terms of material, the connection part 460 is composed of a part of the dielectric layer 140 and a part of the diaphragm 330. For example, the covering part 331 is a part of the diaphragm 330, and the covering part 331 and the diaphragm 330 may be of the same layer structure. (or, an integrally formed structure), and the support portion 141 is a part of the dielectric layer 140 , and the support portion 141 and the dielectric layer 140 may be a same-layer structure (or, an integrally formed structure). The covering portion 331 can determine the position of the supporting portion 141 to obtain a more accurate/accurate stiffness of the diaphragm 330 .

In addition, as shown in Figure 5, the connected protruding portion 312 and the bearing portion 311 form a bearing group 31A. The embodiment of the present invention takes four bearing groups 31A as an example, but it can also be less than four groups or more than 31A. Four groups. In addition, several bearing groups 31A may be evenly distributed relative to the center of the second cavity 310r. For example, the angles between two adjacent bearing groups 31A relative to the center of the second cavity 210r are substantially equal.

Please refer to FIG. 6 , which illustrates a top view of the substrate 310' of the MEMS acoustic sensor 400 according to another embodiment of the present invention. The substrate 310' has similar or identical features to the aforementioned substrate 310. The difference is that the substrate 310' of this embodiment includes a plurality of bearing groups 31A, and not all of the bearing groups are connected to the connecting portion 260. For example, the number of the bearing groups 31A in this embodiment is six, of which three bearing groups 31A are connected to three connecting parts 260 respectively, while the other three bearing groups 31A are not connected to the connecting parts 260 .

Please refer to Figures 7A~7B. Figure 7A illustrates a microelectromechanical system acoustic sensor 400' along the direction 7A-7A' (the direction 7A-7A' is shown) according to another embodiment of the present invention. 7B), and FIG. 7B shows a top view of the substrate 410 of the MEMS acoustic sensor 400' in FIG. 7A (the vibrating part 131 of the diaphragm 130 is shown with a dotted line in FIG. 7B ).

The microelectromechanical system acoustic sensor 400' can be applied to vibration detectors, microphones, sound radio devices, etc., for example. The MEMS acoustic sensor 400' or the MEMS package structure using it can be configured in headphones, cars, wheels, home appliances or industrial instruments and equipment to vibrate based on the received vibrations (eg, generated by audio, vibration) Items analyzed.

The MEMS acoustic sensor 400' includes a substrate 410, a back plate 120, a diaphragm 330, dielectric layers 140 and 150, at least one connection portion (eg, 460), and an electrode layer 170. The diaphragm 330 is disposed between the substrate 410 and the back plate 120 and includes a vibrating portion 131 . The dielectric layer 140 is formed between the substrate 410 and the diaphragm 330 and has a first cavity 140r corresponding to the vibrating part 131 . The connection part 460 is located in the first cavity 140r and connects the vibration part 131 and the substrate 410. In this way, the external signal source V1 can be transmitted to the diaphragm 330 through the connecting portion, causing the diaphragm 330 to vibrate up and down.

The substrate 410 of this embodiment has similar or identical features to the aforementioned substrate 310 . The difference is that the substrate 410 only includes one bearing group 31A, and a connecting portion 460 connects the bearing group 31A and the vibration portion 131 . Compared with the aforementioned micro-electromechanical system acoustic sensor 400, the number of the connection part 460 in this embodiment is only one, so the connection part 460 has lower constraints on the vibrating part 131, so that the diaphragm 330 can sense or detect the external signal source. The test is more sensitive.

In another embodiment, the substrate 410 may have at least one opening (similar to the opening 510a described below), which may be from the lower surface 410b of the substrate 410 to the upper surface of the substrate 410. The direction of 410u extends, for example, it may extend to the upper surface 410u (the opening is a through hole) or not extend to the upper surface 410u (the opening is a blind hole). The stiffness of the substrate 410 can be adjusted/changed through the at least one opening to obtain the desired characteristics of the MEMS acoustic sensor 400', such as sensitivity to different vibration frequencies and/or increasing the detection bandwidth.

As shown in FIG. 7A, at least one of the channel 330a, the corrugated layer 1311 and at least one opening 330b of the diaphragm 330 is like a spring structure, which is connected to the connecting portion, so that the external signal source can easily be transmitted to the diaphragm 330, so that the vibration Membrane 330 is susceptible to vibration changes. The opening 330b is, for example, a through hole or a blind hole. In addition, the diaphragm 330 further includes at least one dimple 120A, which can prevent the diaphragm 330/vibrating portion 131 from contacting and sticking to the substrate 410.

Please refer to FIG. 8 , which illustrates a partial cross-sectional view of a MEMS acoustic sensor 500 according to another embodiment of the present invention.

The microelectromechanical system acoustic sensor 500 can be applied to vibration detectors, microphones, sound-collecting devices, etc., for example. The microelectromechanical system acoustic sensor 500 or the microelectromechanical system package structure using it can be configured in headphones, cars, wheels, home appliances, industrial instruments and equipment, etc. to perform vibration analysis based on the received vibrations (eg, generated by audio, vibration) items.

The MEMS acoustic sensor 500 includes a substrate 510, a back plate 120, a diaphragm 130, dielectric layers 140 and 150, and at least one connection part. The diaphragm 130 is disposed between the substrate 510 and the back plate 120 and includes a vibrating portion 131 . The MEMS acoustic sensor 500 in the embodiment of the present invention has the same or similar features as the MEMS acoustic sensor 100 , except that the structure of the substrate 510 of the MEMS acoustic sensor 500 is different.

As shown in Figure 8, the substrate 510 has at least one opening 510a. 510a extends from the lower surface 510b of the substrate 510 toward the upper surface 510u of the substrate 510, but does not penetrate the substrate 510. In another embodiment, the opening 510a may penetrate the substrate 510. The opening 510a can adjust/change the stiffness of the substrate 510 to obtain the desired characteristics of the MEMS acoustic sensor 500, such as sensitivity to different vibration frequencies and/or increasing the detection bandwidth. In addition, the longer the openings 510a are and/or the more the openings 510a are, the smaller the stiffness of the substrate 510 is; vice versa, the stiffness is larger. The embodiment of the present invention does not limit the number of openings 510a, which is, for example, four, but can also be less or more.

In this embodiment, at least one opening 510a can be formed in the protruding portion 112 or other suitable location of the substrate 110 in Figure 1B; or, at least one opening 510a can be formed in the protruding portion 212 or other suitable locations of the substrate 210 in Figure 3B. Other suitable locations; alternatively, at least one opening 510a may be formed in the protruding portion 312 of the substrate 310 in Figure 4 or other appropriate locations; alternatively, at least one opening 510a may be formed in the protruding portion 312 or other appropriate locations of the substrate 310 in Figure 5 Other suitable parts.

Please refer to FIG. 9 , which illustrates a cross-sectional view of a microelectromechanical system packaging structure 10 according to an embodiment of the present invention. The MEMS package structure 10 may include a MEMS acoustic sensor 100, a carrier 11, a housing 12, a pad 13, an integrated circuit die 14, at least one first contact 15 and at least one second contact 16. The carrier board 11 and the housing 12 can define an accommodation space R1. The MEMS acoustic sensor 100 can be disposed on the pad 13 of the carrier board 11 . The pad 13 has, for example, insulation and/or thermal conductivity. The integrated circuit die 14 may be disposed on the carrier board 11 . The MEMS acoustic sensor 100 and the integrated circuit die 14 can be electrically connected through wire bonding, and the integrated circuit die 14 and the carrier board 11 can be electrically connected. In one embodiment, the carrier board 11 may include a printed circuit board or be a printed circuit board itself. In one embodiment , the integrated circuit chip 14 is, for example, an application specific integrated circuit (Application Specific Integrated Circuit, ASIC) chip. In one embodiment, the housing 12 is connected to the carrier board 11 and covers the MEMS acoustic sensor 100 , the carrier board 11 , the pads 13 and the integrated circuit die 14 . The carrier 11 includes electrically conductive material, such as metal. In one embodiment, housing 12 may include a printed circuit board. In one embodiment, the carrier board 11 is disposed close to the signal source (the direction of the signal source V1 is indicated by the arrow below the carrier board 11, but the present disclosure is not limited thereto), and includes solid conductive paths, such as ear bones. In one embodiment, the empty portion without material in the MEMS packaging structure can be filled with gas, such as air, which is simple to manufacture and low in cost. In another embodiment, the empty portion without material in the MEMS packaging structure can be evacuated to reduce the damping effect, resulting in lower energy loss or mechanical dissipation. In another embodiment, the MEMS acoustic sensor 100 of the MEMS package structure 10 can be replaced by any one of the MEMS acoustic sensors 100', 200, 300, 400, 400' and 500. .

The first contact 15 and the second contact 16 are electrically connected. The second contact 16 is connected to the first contact 15 to provide a driving input signal of the integrated circuit die 14 , and the sensing signal sensed by the MEMS acoustic sensor 100 is processed by the integrated circuit die 14 Then it is output to the first contact 15, and then the second contact 16 outputs the sensing signal.

Please refer to FIG. 10 , which illustrates a cross-sectional view of a microelectromechanical system packaging structure 20 according to another embodiment of the present invention. The MEMS package structure 20 may include the MEMS acoustic sensor 100, a carrier 11, a housing 12, a pad 13, an integrated circuit die 14, at least one first contact 15, and at least one second contact. Point 16 and connecting line 25. The MEMS package structure 20 has the same or similar structure as the MEMS package structure 10 . The difference is that the MEMS acoustic sensor 100 is disposed on the casing 12 , for example, on the casing 12 . The upper part of 12 opposite to the carrier plate 11 can also be arranged on the side of the housing 12 . In addition, the MEMS packaging structure 20 further includes connection lines 25 that electrically connect the integrated circuit die 14 and the carrier board 11 . The connection line 25 can be formed on, inside or outside the carrier board 11 and the housing 12, and connects at least one first contact 15 and at least one second contact 16. The connection wire 25 is, for example, a conductive wire, such as a copper wire, which can be formed on the carrier board 11 and the casing 12 by, for example, printing. In another embodiment, the MEMS acoustic sensor 100 of the MEMS package structure 20 can be replaced by any one of the MEMS acoustic sensors 100', 200, 300, 400, 400' and 500. .

Please refer to FIG. 11 , which illustrates a cross-sectional view of a microelectromechanical system packaging structure 30 according to another embodiment of the present invention. The MEMS package structure 30 may include the MEMS acoustic sensor 100, a carrier 31, a housing 12, a pad 13, an integrated circuit die 14, at least one first contact 15 and at least one second contact 16. The MEMS packaging structure 30 has the same or similar structure as the MEMS packaging structure 10 , except that the carrier board 31 has a through hole 31 a. The through hole 31a is located below the second cavity 110r of the substrate 110. The through hole 31a can provide a path for sound signals in the external air to enter the MEMS packaging structure 30, but embodiments of the present invention are not limited thereto. In other embodiments, the through hole 31 a may be provided in the housing 12 , for example, at least one through hole 31 a is formed in the upper part and/or the side part of the housing 12 . In another embodiment, the MEMS acoustic sensor 100 of the MEMS package structure 30 can be replaced by any one of the MEMS acoustic sensors 100', 200, 300, 400, 400' and 500. .

Please refer to FIG. 12 , which illustrates a cross-sectional view of a microelectromechanical system packaging structure 40 according to another embodiment of the present invention. Microelectromechanical system package structure 40 may include microelectromechanical The system acoustic sensor 500 , the carrier board 41 , the housing 12 , the pads 13 , the integrated circuit die 14 , at least one connecting component 45 , at least one first contact 15 and at least one second contact 16 . The MEMS package structure 40 has the same or similar structure as the MEMS package structure 10 , except that the MEMS acoustic sensor is replaced by the component 500 and the structure of the carrier board 41 is different.

The carrier plate 41 has an opening 41a. In this embodiment, the opening 41a is, for example, a blind hole, such as a recess or a groove. The microelectromechanical system acoustic sensor 500 is arranged on the carrier board 41, and a part of the substrate 510 is positioned corresponding to the opening 41a. The connecting element 45 is disposed in the opening 41 a and is connected or contacted with the substrate 510 of the MEMS acoustic sensor 500 . The external signal source V1 can be transmitted to the MEMS acoustic sensor 500 through the connecting element 45 . In another embodiment, the MEMS acoustic sensor 500 of the MEMS package structure 40 can be replaced by any one of the MEMS acoustic sensors 100', 100, 200, 300, 400 and 400'. .

Please refer to FIG. 13 , which illustrates a cross-sectional view of a microelectromechanical system packaging structure 50 according to another embodiment of the present invention. The MEMS package structure 50 may include a MEMS acoustic sensor 500, a carrier 51, a housing 12, a pad 13, an integrated circuit die 14, a connecting element 55, at least one first contact 15 and at least one Second contact point 16. The MEMS package structure 50 has the same or similar structure as the MEMS package structure 40 , except that the structure of the carrier board 51 is different from the structure of the carrier board 41 and the structure of the connecting element 55 is different from the structure of the connecting element 45 .

The carrier plate 51 has an opening 51a. In this embodiment, the opening 51a is, for example, a through hole. The MEMS acoustic sensor 500 is configured on the carrier board 51, and the substrate 510 A part of the position corresponds to the opening 51a. The connecting element 55 is disposed in the opening 51 a and is connected or contacted with the substrate 510 of the MEMS acoustic sensor 500 . The external signal source V1 can be transmitted to the MEMS acoustic sensor 500 through the connecting element 55 . In this embodiment, the connecting element 55 is, for example, a hole plug, which is inserted into the opening 51 a of the carrier board 51 to tightly connect the substrate 510 of the MEMS acoustic sensor 500 .

In another embodiment, the MEMS acoustic sensor 500 of the MEMS package structure 50 can be replaced by any one of the MEMS acoustic sensors 100', 100, 200, 300, 400 and 400'. .

14A to 14P illustrate a manufacturing method of the MEMS acoustic sensor 100 according to an embodiment.

As shown in Figure 14A, a substrate layer 110' is provided. In one embodiment, the substrate layer 110' is, for example, a silicon substrate. However, embodiments of the present invention are not limited thereto, and the substrate layer 110' may include other suitable semiconductor materials.

As shown in FIG. 14B, for example, a deposition process or a thermal oxidation process can be used to form a dielectric material layer 140' and a dielectric layer on the upper surface (or front surface) and lower surface (or back surface) of the substrate layer 110' respectively. Electrical material layer 145'. The deposition process is, for example, plasma enhanced oxide (PEOX), but this is not intended to limit the embodiments of the present invention. In one embodiment, the dielectric material layer 140' and the dielectric material layer 145' are formed at the same time, for example. In terms of materials, the dielectric material layer 140' and/or the dielectric material layer 145' includes, for example, an oxide, such as silicon oxide. The materials of the dielectric material layer 140' and the dielectric material layer 145' may be the same or different.

As shown in Figure 14C, the dielectric material layer 140' can be patterned using, for example, a photolithography process to form a concave pattern. It includes at least one recess 140a. The "recess" herein includes, for example, grooves and/or through holes. The "lithography process" herein includes, for example, coating (photoresist), exposure, development and/or etching. The number and/or geometric shape (pattern) of the "recesses" may depend on the actual situation, and is not limited in the embodiments of the present invention.

As shown in Figure 14D, a deposition process can be used to form a dielectric material layer 140" on the dielectric material layer 140', where the dielectric material layer 140" and the dielectric material layer 140' are collectively referred to as a dielectric material layer. 140'''. The dielectric material layer 140'''' has a recess pattern, which includes at least one recess 140a'. The recess 140a' is formed conforming to the shape of the recess 140a. In addition, the material of the dielectric material layer 140'''' is, for example, an oxide, such as silicon oxide, silicon dioxide, oxide or TEOS oxide, but this is not intended to limit the invention. Inventive Examples. In one embodiment, the recess 140a' may define the structure of the diaphragm 130 formed subsequently, but the embodiment of the present invention is not limited thereto. The materials of the dielectric material layer 140" and the dielectric material layer 140' may be the same or different.

As shown in FIG. 14E , for example, an etching process can be used to form at least one recess 140 a ″. The recess 140 a ″ is, for example, a through hole penetrating the dielectric material layer 140 ″.

As shown in FIG. 14F, for example, a deposition process can be used to form the diaphragm layer 130' on the dielectric material layer 140''' and the element layer 135' on the dielectric material layer 145'. The diaphragm layer 130' has a recess pattern, which includes at least one recess 130a1. The recess 130a1 is formed at a position corresponding to the recess 140a". The element layer 135' and the diaphragm layer 130' can be formed at the same time. In addition, the diaphragm layer 130' and the element layer 135' can be made of the same material, such as polysilicon or silicon carbide. Semiconductor materials such as silicon carbide (SiC) and single crystal can be produced through processes such as ion implantation or doping. produce conductive properties, but the embodiments of the present invention are not limited thereto.

As shown in Figure 14G, at least one recess 130a2 can be formed in the diaphragm layer 130' of Figure 14E using, for example, a photolithography process to form the diaphragm 130. The recess 130a2, for example, penetrates the diaphragm layer 130' and exposes the dielectric material layer 140'''. In this step, the element layer 135' can be removed at the same time to expose the dielectric material layer 145'.

As shown in Figure 14H, a deposition process may be used to form a dielectric material layer 150' on the diaphragm 130 and a dielectric material layer 145" on the dielectric material layer 145', wherein the dielectric material layer 150' Fill the recess 130a2. The dielectric material layer 150' may have a recess pattern, which includes at least one recess 150a1. The recess 150a1 is formed corresponding to the recess 130a1 of the diaphragm 130. The dielectric material layer 145" and the dielectric material layer 145' are collectively referred to as dielectric Layer 145 of electrical material. In one embodiment, the dielectric material layer 150' and the dielectric material layer 145" are formed at the same time. In addition, the dielectric material layer 150' and the dielectric material layer 145" can be made of the same material, such as an oxide, such as Silicon oxide, but embodiments of the present invention are not limited thereto.

As shown in FIG. 14I, at least one recess 150a2 can be formed in the dielectric material layer 150' using, for example, a photolithography process to form a dimple to reduce surface viscosity.

As shown in Figure 14J, a deposition process can be used to form a dielectric material layer 150" on the dielectric material layer 150' in Figure 14I and fill the recessed portion 150a2. The dielectric material layer 150" has at least one recessed portion 150a3. and at least one recessed portion 150a4, wherein the recessed portion 150a4 exposes the diaphragm 130. In one embodiment, the material of the dielectric material layer 150″ is, for example, an oxide, such as silicon oxide, but the embodiment of the present invention is not limited thereto. The recessed portions 150a3 and 150a4 can be formed using a lithography process and an etching process.

As shown in Figure 14K, for example, a deposition process can be used to form the backplane material 120' on the dielectric material layer 150" and to form the device layer 125' on the dielectric material layer 145, wherein the backplane material 120' is filled The recessed portion 150a4 is electrically connected to the diaphragm 130. The backplate material 120' includes at least one protrusion 120A, which is formed corresponding to the recessed portion 150a3. In addition, the backplate material 120' and the element layer 125' can be formed at the same time. In addition, the backplate material 120 The material of the element layer 125 can be the same, for example, a semiconductor material, such as polysilicon (polysilicon), silicon carbide (SiC) and other semiconductor materials, which can be ion implanted or doped (doping). Such processes enable the material to develop conductive properties, but the embodiments of the present invention are not limited thereto.

As shown in Figure 14L, the electrode layer 170 can be formed on the backplane material 120' using, for example, a metal deposition process, a photolithography process, an etching process or a lift-off process. The electrode layer 170 can include two Electrodes, one of which is the positive electrode of the diaphragm potential, and the other is the negative electrode of the backplate potential.

As shown in FIG. 14M, the backplane material 120' can be patterned using, for example, a photolithography process to form the backplane 120. The back plate 120 has at least an acoustic hole 120B.

As shown in FIG. 14N, the element layer 125' can be removed using, for example, an etching process to expose the dielectric material layer 145.

As shown in FIG. 14O, the dielectric material layer 145 can be patterned using, for example, a photolithography process to form at least one recessed portion 145a, wherein the recessed portion 145a exposes the substrate layer 110'.

As shown in Figure 14P, the substrate layer can be removed using, for example, an etching process. 110′ to form the substrate 110. The substrate 110 has at least one second cavity 110r.

Then, for example, a wet etching process can be used, and the etching liquid passes through the recess 145a and the second cavity 110r in Figure 14P to remove the dielectric material to form the dielectric layer 140 and the dielectric layer 150 as shown in Figure 1A .

The manufacturing methods of the remaining MEMS acoustic sensors 100', 200, 300, 400' and 400 are similar or the same as the manufacturing method of the MEMS acoustic sensor 100. The difference lies in the use of photomasks with different patterns to form different The backplane, diaphragm, dielectric layer and/or substrate of the structure.

Please refer to Figures 15A to 15B, which illustrate the manufacturing process diagram of the MEMS acoustic sensor 500 in Figure 8. The manufacturing process of the MEMS acoustic sensor 500 is similar or identical to the MEMS acoustic sensor 100 , except for the manufacturing process of the substrate 510 .

As shown in FIG. 15A, for example, a photolithography process can be used to form at least one photoresist 146 in at least one opening 145a' of the dielectric material layer 145, wherein the opening 145a' exposes the substrate layer 510', and the photoresist 146 fills the opening 145a'.

As shown in Figure 15B, an etching process can be used to remove the photoresist 146 and the substrate material corresponding to the photoresist 146 to form at least one opening 510a in the substrate layer 510' to form the substrate 510.

The remaining manufacturing steps of the MEMS acoustic sensor 500 are the same as or similar to the corresponding manufacturing steps of the MEMS acoustic sensor 100 and will not be described again.

Taking the manufacturing method of the MEMS packaging structure 10 as an example, the integrated circuit die 14 and MEMS acoustic sensors (such as 100, 100', 200, 300, 400, 400' or 500') on the carrier board 11, and then use a wire bonding process to electrically connect the carrier board 11, the integrated circuit die 14 and the MEMS acoustic sensor with welding wires, and then use the casing 12 is configured on the carrier board 11 and covers the integrated circuit die 14 and the MEMS acoustic sensor. The manufacturing processes of the other MEMS packaging structures 20 , 30 , 40 and 50 are similar to the MEMS packaging structure 10 , and will not be described again.

In summary, although the present invention has been disclosed in the above embodiments, they are not intended to limit the present invention. Those with ordinary knowledge in the technical field to which the present invention belongs can make various modifications and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the appended patent application scope.

110:Substrate

110w: inner wall

112:Protrusion

120:Back panel

130:Diaphragm

131:Vibration Department

1313:Through hole

140,150: Dielectric layer

140r: first cavity

160A,160B2:Connection part

160C1: Limiting part

170:Electrode layer

V1: external signal source

Claims (18)

A micro-electromechanical system acoustic sensor includes: a substrate; a back plate and a diaphragm, which are arranged between the substrate and the back plate and include a vibration part; a dielectric layer formed between the substrate and the vibrator There is a first cavity between the membranes corresponding to the vibration part; and a connecting part located in the first cavity and connecting the vibration part and the substrate; wherein the substrate has a second cavity and includes a The bearing part, the position of the second cavity corresponds to the first cavity, the bearing part protrudes relative to one side wall of the second cavity, and the connecting part is located between the vibration part and the substrate; wherein, the substrate It further includes a protruding portion extending from the side wall toward the bearing portion and connected to the bearing portion; the width of the protruding portion is greater than the width of the bearing portion. The microelectromechanical system acoustic sensor as claimed in claim 1, wherein the connecting part is a columnar body. The MEMS acoustic sensor of claim 1, wherein the connecting part is located in the middle area of the vibrating part. The microelectromechanical system acoustic sensor of claim 1, wherein the connecting portion is located in an edge area of the vibrating portion. The MEMS acoustic sensor of claim 1, wherein the vibrating part has a spring structure, and the connecting part is connected to the spring structure. The microelectromechanical system acoustic sensor of claim 1, wherein the substrate has an opening formed in the protruding portion. The MEMS acoustic sensor of claim 1, wherein the diaphragm has a channel corresponding in position to the protrusion. The microelectromechanical system acoustic sensor of claim 1, wherein the diaphragm has a channel, and the channel communicates with the first cavity. The microelectromechanical system acoustic sensor according to claim 1, wherein the connecting part includes: a supporting part; and a covering part covering the supporting part. As for the microelectromechanical system acoustic sensor of claim 9, the covering part and the diaphragm are made of the same material. The MEMS acoustic sensor of claim 1, wherein the connecting portion and the dielectric layer are made of the same material. The MEMS acoustic sensor of claim 1, wherein the substrate has a lower surface and an opening extending upward from the lower surface of the substrate. The MEMS acoustic sensor according to claim 1, wherein the vibrating part has a protruding structure and/or a hollow structure. A microelectromechanical system packaging structure, including: a carrier board; and The microelectromechanical system acoustic sensor according to any one of claims 1 to 13 is configured on the carrier board. The microelectromechanical system packaging structure of claim 14, wherein the carrier board has an opening, and the microelectromechanical system packaging structure further includes: a connecting element disposed in the opening and connected to the microelectromechanical system acoustic sensor the base plate of the device. The microelectromechanical system packaging structure as claimed in claim 15, wherein the opening is a blind hole or a through hole. A manufacturing method of a microelectromechanical system acoustic sensor, including: forming a dielectric material layer on a substrate layer; forming a diaphragm on the dielectric material layer; forming a back plate on the diaphragm, wherein the diaphragm The film is located between the substrate layer and the backplane and includes a vibrating portion; forming a second cavity in the substrate layer to form a substrate, wherein the second cavity exposes the dielectric material layer; and through the substrate In the second cavity, part of the material of the dielectric material layer is removed to form a dielectric layer and a connection part, wherein the dielectric layer is located between the substrate and the diaphragm and has a corresponding vibration part a first cavity, and the connecting part is located in the first cavity and connects the vibration part and the substrate; wherein, the substrate includes a bearing part, and the second cavity corresponds to the position of the first cavity , the bearing part protrudes relative to one side wall of the second cavity, and the connecting part is located between the vibrating part and the base plate; Wherein, the base plate further includes a protruding portion extending from the side wall toward the bearing portion and connected to the bearing portion; the width of the protruding portion is greater than the width of the bearing portion. The manufacturing method of claim 17, wherein in the step of forming the second cavity in the substrate layer, the substrate has an opening, and the opening is formed in the protruding portion.

Images