TWI830313B - Electronic device - Google Patents

Abstract

An electronic device is provided. The electronic device, which is characterized by, includes a sensing device. The sensing device includes an anti-reflection unit, a circuit layer including a thin-film transistor disposed on the anti-reflection unit, and a light-sensing element disposed on the circuit layer and electrically connected to the thin-film transistor.

Description

electronic device

The present disclosure relates to an electronic device, and in particular to an electronic device having an anti-reflection unit.

Fingerprint sensing technology is suitable for personal identification or authentication and is widely used in daily life. Among them, optical fingerprint recognition is currently one of the most popular and highly recommended technologies, and has excellent potential for application in a variety of electronic devices. .

Generally speaking, a good optical fingerprint sensor must have a high level of security (that is, a low False Acceptance Rate (FAR)), and the biometric system has a low probability of mistakenly identifying an illegal user as a legitimate user. ), and high convenience (i.e., low False Rejection Rate (FRR), the probability that the biometric system will misjudge a legitimate user as an illegal user is low). In order to reduce the probability of misjudgment by the optical fingerprint sensor, any source of light signals that may interfere with fingerprint determination must be eliminated.

According to an embodiment of the present disclosure, an electronic device is provided, which is characterized in that it includes: a sensing device, the sensing device includes: an anti-reflection unit; a circuit layer including a thin film transistor, disposed on the anti-reflection unit on the unit; and a light sensing element is disposed on the circuit layer and electrically connected to the thin film transistor.

According to an embodiment of the present disclosure, an electronic device is provided, which is characterized in that it includes: a sensing device, the sensing device includes: a circuit layer including a thin film transistor; a light sensing element disposed on the circuit on the circuit layer and is electrically connected to the thin film transistor; and an anti-reflection unit is disposed on the circuit layer and used to absorb light penetrating the light sensing element.

According to an embodiment of the present disclosure, an electronic device is provided, which is characterized in that it includes: a sensing device, the sensing device includes: a substrate including a first side and a second side opposite to the first side. ; An anti-reflection layer, disposed on the first side; a circuit layer, including a thin film transistor, disposed on the second side; and a light sensing element, disposed on the circuit layer and electrically connected to the thin film transistor.

The following disclosure provides many different embodiments for implementing different features of the present invention. The following disclosure describes specific examples of each component and its arrangement to simplify the explanation. Of course, these specific examples are not limiting. For example, if the embodiment of the present disclosure describes that a first feature component is formed on or above a second feature component, it means that it may include an embodiment in which the first feature component and the second feature component are in direct contact, or Embodiments may be included where additional features are formed between the first features and the second features such that the first features and the second features may not be in direct contact.

It should be understood that additional operational steps may be performed before, during, or after the method, and that some of the operational steps may be replaced or omitted in other embodiments of the method.

In addition, words related to space may be used, such as "below", "below", "lower", "above", "above", "higher" and similar words. These spatially relative terms are used to facilitate describing the relationship between one element or feature(s) and another element or feature(s) in the illustrations, including differences in devices in use or operation. Orientation, as well as the orientation described in the drawing. When the device is rotated 45 degrees or at any other orientation, the spatially relative adjectives used in the device will be interpreted in accordance with the rotated orientation. Furthermore, when it is said that a first material layer is located on or above a second material layer, it includes the situation where the first material layer and the second material layer are in direct contact, or there may be one or more other materials separated between them. In the case of layers, in this case, there may not be direct contact between the first material layer and the second material layer. In some embodiments of the present disclosure, terms related to joining and connecting, such as "connection", "interconnection", etc., unless otherwise defined, may mean that two structures are in direct contact, or may also mean that two structures are not in direct contact. There are other structures located between these two structures. And the terms about joining and connecting can also include the situation where both structures are movable, or both structures are fixed.

In the specification, the terms "about", "approximately", "approximately", "approximately", "substantially", "the same" and "similar" usually mean that a characteristic value is within plus or minus 15% of a given value. , or within a range of plus or minus 10%, or within plus or minus 5%, or within plus or minus 3%, or within plus or minus 2%, or within plus or minus 1%, or within the range of plus or minus 0.5%. The quantities given here are approximate quantities, that is, in the absence of specific instructions such as "approximately", "approximately", "approximately", "approximately", and "substantially", "approximately", "approximately", "substantially" may still be implied. The meaning of "approximately", "approximately", "approximately", and "substantially".

It will be understood that, although the terms "first," "second," "third," etc. are used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections /or segments should not be limited by these terms. These terms may only be used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present disclosure.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It is understood that these terms, such as those defined in commonly used dictionaries, should be interpreted to have meanings consistent with the relevant technology and the background or context of the present disclosure, and should not be interpreted in an idealized or overly formal manner. Interpretation, unless otherwise specifically defined in the embodiments of this disclosure.

Referring to FIG. 1 , according to an embodiment of the present disclosure, an electronic device 10 is provided. Figure 1 is a schematic cross-sectional view of the electronic device 10 . As shown in FIG. 1 , the electronic device 10 includes a sensing device 19 . The sensing device 19 may include an anti-reflective unit 12, a circuit layer 14, and a light sensing element 16. The circuit layer 14 can be disposed on the anti-reflection unit 12 . The light sensing element 16 can be disposed on the circuit layer 14 . The circuit layer 14 may include a thin film transistor 33 , and the thin film transistor 33 may include a first insulating layer 26 , a first metal layer 28 , a semiconductor layer 24 , and a second metal layer 32 . The first metal layer 28 may include a gate, the second metal layer 32 may include a source and a drain, and the first insulating layer 26 may be disposed between the first metal layer 28 and the second metal layer 32 . The light sensing element 16 can be electrically connected to the thin film transistor 33 . For example, the light sensing element 16 may be electrically connected to an electrode (eg, a drain) formed of the second metal layer 32 . The structure and material composition of each of the above components are described in detail below.

As shown in FIG. 1 , the sensing device 19 may include a light path guiding structure 18 , which may be disposed on the light sensing element 16 . The electronic device 10 may include a sensing device 19 and a display 20 , and the sensing device 19 may be disposed below the display 20 . The sensing device 19 can be fixed below the display 20 through an adhesive layer (not shown). The display 20 may be disposed on the sensing device 19 , for example, may be disposed on the light path guiding structure 18 .

In Figure 1, the anti-reflection unit 12 may include a substrate 12'. The substrate 12' includes a first side S1 and a second side S2 opposite to the first side S1. The circuit layer 14 may be disposed on the second side S2 of the substrate 12'. According to some embodiments, the anti-reflection unit 12 may be the substrate 12', that is, the substrate 12' itself may serve as an anti-reflection unit. The substrate 12' can be made of light-absorbing material. For example, the substrate 12' may be made of a material or structure that can absorb light signals that pass through the light sensing element 16, or that can absorb light signals that have a specific wavelength that passes through the light sensing element 16. According to some embodiments, the anti-reflection unit 12 can prevent the light signal penetrating the light sensing element 16 from being reflected back to the light sensing element 16 and affecting the light signal sensing effect of the light sensing element 16 . According to some embodiments, the sensing device 19 can be used as a biometric sensor, for example, a fingerprint sensor. In some embodiments, the substrate 12' may include a hard substrate or a flexible substrate. In some embodiments, the hard substrate may include a silicon substrate or a glass substrate, but the disclosure is not limited thereto. In some embodiments, the flexible substrate may include a polyimide (PI) substrate, a polyethylene terephthalate (PET) substrate, or a polycarbonate (PC) substrate, but the disclosure is not limited thereto. In some embodiments, the thickness of the substrate 12' may range from about 10 micrometers to about 100 micrometers, but the present disclosure is not limited thereto.

In Figure 1, the circuit layer 14 may include a buffer layer 22, a semiconductor layer 24, a first insulating layer 26, a first metal layer 28, an interlayer dielectric layer (ILD) 30, a second metal layer 32, and a second insulating layer. 34. The first flat layer 36 and the third metal layer 38. The buffer layer 22 is disposed on the substrate 12 . The semiconductor layer 24 is provided on the buffer layer 22 . The first insulating layer 26 is disposed on the buffer layer 22 and covers the semiconductor layer 24 . The first metal layer 28 is disposed on the first insulation layer 26 . The interlayer dielectric layer (ILD) 30 is disposed on the first insulating layer 26 and covers the first metal layer 28, and forms an opening 31 to expose a portion of the semiconductor layer 24. The second metal layer 32 is disposed on the interlayer dielectric layer (ILD) 30 , fills the opening 31 , and is electrically connected to the semiconductor layer 24 . Here, the first insulating layer 26 may serve as a gate insulating layer, the first metal layer 28 may include a gate, the semiconductor layer 24 may serve as an active layer, and the second metal layer 32 may include a source and a drain. Therefore, the first insulating layer 26 , the first metal layer 28 , the semiconductor layer 24 and the second metal layer 32 can form a thin film transistor 33 . The second insulating layer 34 is disposed on the interlayer dielectric layer (ILD) 30 and covers the second metal layer 32 . The first flat layer 36 is disposed on the second insulating layer 34 and forms an opening 37 to expose a portion of the second metal layer 32 . The third metal layer 38 is disposed on the first flat layer 36 , fills the opening 37 , and is electrically connected to the second metal layer 32 .

In some embodiments, the buffer layer 22, the first insulating layer 26, the interlayer dielectric layer (ILD) 30, the second insulating layer 34, and the first planarization layer 36 may include organic materials or inorganic materials, such as silicon oxide. , silicon nitride, silicon oxynitride, or combinations thereof, but the disclosure is not limited thereto. In some embodiments, the semiconductor layer 24 may include amorphous silicon, polycrystalline silicon, or metal oxide, but the disclosure is not limited thereto. In some embodiments, the first metal layer 28 , the second metal layer 32 , and the third metal layer 38 may include molybdenum, aluminum, copper, titanium, or combinations thereof, for example, molybdenum/aluminum/molybdenum, titanium/aluminum /titanium, or titanium/aluminum/molybdenum, but the present disclosure is not limited thereto, and other suitable conductive materials are also applicable to the present disclosure.

In FIG. 1 , the light sensing element 16 can be disposed on the circuit layer 14 and is electrically connected to the thin film transistor 33 . For example, the light sensing element 16 may be electrically connected to an electrode (eg, a drain) formed of the second metal layer 32 . The third metal layer 38 can be disposed on the second metal layer 32 and can be disposed in the opening 37 of the first flat layer 36 to be electrically connected to the drain formed by the second metal layer 32 . Specifically, the light sensing element 16 can be disposed on the third metal layer 38 and be electrically connected to the third metal layer 38 . Therefore, the light sensing element 16 can be electrically connected to the thin film transistor 33 through the third metal layer 38 . The light sensing element 16 may include an element responsive to light. In some embodiments, the light sensing element 16 may include a photodiode, but the disclosure is not limited thereto. The photodiode may include an organic photodiode or an inorganic light emitting diode, but the present disclosure is not limited thereto. The photodiode may be a PN type or a PIN type, but the disclosure is not limited thereto. The third insulating layer 40 is disposed on the first flat layer 36 and covers the third metal layer 38 and part of the light sensing element 16 . The second flat layer 42 is disposed on the third insulating layer 40 and forms an opening 43 to expose part of the light sensing element 16 . The fourth insulating layer 44 is disposed on the second flat layer 42 and fills the opening 43 to expose part of the light sensing element 16 . The electrode layer 46 is disposed on the fourth insulating layer 44 and fills the opening 43 to be electrically connected to the light sensing element 16 .

In some embodiments, the third insulating layer 40 , the second flat layer 42 , and the fourth insulating layer 44 may include organic materials, inorganic materials, or combinations thereof, such as silicon oxide, silicon nitride, and silicon oxynitride. , or combinations thereof, but the disclosure is not limited thereto. In some embodiments, the electrode layer 46 may include indium tin oxide (ITO), but the present disclosure is not limited thereto, and other suitable conductive materials are also applicable to the present disclosure.

In FIG. 1 , the light path guiding structure 18 includes a third flattening layer 48 , a fifth insulating layer 50 , a fourth metal layer 52 , a sixth insulating layer 54 , a fourth flattening layer 56 , a first dielectric layer 58 , a first The light shielding layer 60 , the second dielectric layer 62 , the second light shielding layer 64 , the seventh insulating layer 66 and the microlens 68 . The third flat layer 48 is disposed on the electrode layer 46 . The fifth insulating layer 50 is disposed on the third flat layer 48 . The fourth metal layer 52 is disposed on the fifth insulation layer 50 . The fourth metal layer 52 has a plurality of openings 52'. The sixth insulating layer 54 is disposed on the fourth metal layer 52 and fills the opening 52' of the fourth metal layer 52. The fourth flat layer 56 is disposed on the sixth insulating layer 54 . The first dielectric layer 58 is disposed on the fourth planarization layer 56 . The first light-shielding layer 60 is disposed on the first dielectric layer 58 . The first light-shielding layer 60 includes a plurality of first openings 60'. The second dielectric layer 62 is disposed on the first light-shielding layer 60 and fills the first opening 60' of the first light-shielding layer 60. The second light-shielding layer 64 is disposed on the second dielectric layer 62 . The second light-shielding layer 64 includes a plurality of second openings 64'. The seventh insulating layer 66 is disposed on the second light-shielding layer 64 and fills the second opening 64' of the second light-shielding layer 64. The microlens 68 can be disposed on the seventh insulation layer 66 and can correspond to the light sensing element 16 below.

According to some embodiments, as shown in FIG. 1 , a finger may touch the surface 20S of the display 20 . The light generated by the display 20 can be reflected by the finger to generate reflected light. The reflected light can reach the light sensing element 16 through the microlens 68, the second opening 64' of the second light shielding layer 64, and the first opening 60' of the first light shielding layer 60. The anti-reflection unit 12 located below the light sensing element 16 can absorb the light signal penetrating the light sensing element 16 and prevent the light signal penetrating the light sensing element 16 from being reflected back to the light sensing element 16 and affecting the light sensing element 16 sensing quality. According to some embodiments, the anti-reflection unit 12 can prevent the light signal penetrating the light sensing element 16 from being reflected back to the light sensing element 16 and affecting the light signal sensing effect of the light sensing element 16 . According to some embodiments, the sensing device 19 can be used as a biometric sensor, for example, a fingerprint sensor.

According to some embodiments, the light path guiding structure 18 is provided to guide the path of light, but is not an essential component. For example, the first opening 60' of the first light-shielding layer 60 can prevent light leakage at large angles. The second opening 64' of the second light-shielding layer 64 can prevent light leakage from the microlens 68. According to some embodiments, the fourth metal layer 52 may have openings 52'. According to some embodiments, the opening 43 of the second flat layer 42, the first opening 60' of the first light-shielding layer 60, the second opening 64' of the second light-shielding layer 64, the opening 52' of the fourth metal layer 52, The light sensing element 16 may be overlapped in the normal direction of the substrate 12' (eg, the Z direction in FIG. 1). In this way, light can be transmitted to the light sensing element 16 through the second opening 64', the first opening 60', the opening 52', and the opening 43. According to some embodiments, the microlens 68 can overlap with the light sensing element 16 in the normal direction (Z direction) of the substrate 12', and can have a light collection effect, and can focus light onto the light sensing element 16.

According to some embodiments, the sizes of the second opening 64', the first opening 60', and the opening 52' may not be limited, and the width of the second opening 64' may be greater than, less than, or equal to the width of the first opening 60'. , may be greater than, less than, or equal to the width of the opening 52'. According to some embodiments, the width of the second opening 64' may be greater than the width of the first opening 60', and the width of the first opening 60' may be greater than the width of the opening 52', but is not limited thereto. The widths of the above-mentioned second opening 64', first opening 60', opening 52', and opening 43 can be measured in the same cross-sectional view.

In some embodiments, the third flattening layer 48, the fifth insulating layer 50, the sixth insulating layer 54, the fourth flattening layer 56, the first dielectric layer 58, the second dielectric layer 62, and the seventh insulating layer 66 may include organic materials or inorganic materials, such as silicon oxide, silicon nitride, silicon oxynitride, or combinations thereof, but the disclosure is not limited thereto. In some embodiments, the fourth metal layer 52 may include molybdenum, aluminum, copper, titanium, or a combination thereof, such as molybdenum/aluminum/molybdenum, titanium/aluminum/titanium, or titanium/aluminum/molybdenum. Without limitation, other suitable conductive materials are also suitable for use in this disclosure. In some embodiments, the first light-shielding layer 60 and the second light-shielding layer 64 may include chromium, chromium oxide, or black resin, but the present disclosure is not limited thereto.

In some embodiments, the display 20 may include a backlight module (not shown) and a display panel (not shown), but the disclosure is not limited thereto. In some embodiments, the backlight module may include a light source module, a reflective sheet, a light guide plate, an optical film set, and a backplane, but the disclosure is not limited thereto. In some embodiments, the light source module may include a light emitting diode (LED), but the disclosure is not limited thereto. According to some embodiments, the display 20 may be a device with a display function. For example, the display 20 may be a liquid crystal display, an organic light emitting diode (OLED) display, or an inorganic light emitting diode (inorganic light emitting diode). Display, sub-millimeter light-emitting diode (mini LED), micro-light emitting diode (micro LED) display, or quantum dot light-emitting diode (quantum dot LED, QLED/QDLED) display, but the disclosure is not limited thereto. In some embodiments, the optical film set may include a lower diffusion film, an upper diffusion film, a lower light-enhancing film, an upper light-enhancing film, or a light film, but the disclosure is not limited thereto. In some embodiments, the display 20 may include a lower polarizing film, a thin film transistor layer, a color filter layer, an upper polarizing film, and a glass cover, but the disclosure is not limited thereto.

Referring to FIG. 2 , according to an embodiment of the present disclosure, an electronic device 10 is provided. Figure 2 is a schematic cross-sectional view of the electronic device 10 .

The structure and material composition of each component in the electronic device 10 shown in FIG. 2 is similar to the electronic device 10 shown in FIG. 1 and will not be described again here. The main difference from Figure 1 is that in Figure 2, the anti-reflection unit 12 includes a substrate 12' and an anti-reflection layer 70. For example, an anti-reflective layer 70 is added between the substrate 12' and the circuit layer 14. The anti-reflective layer 70 is provided on one side of the substrate 12'. Specifically, the substrate 12' includes a first side S1 and a second side S2 opposite to the first side S1. The anti-reflective layer 70 may be disposed on the second side S2 of the substrate 12'. The anti-reflection layer 70 may be a light-absorbing layer, for example. According to some embodiments, the anti-reflective layer 70 may include a light-absorbing material. For example, the anti-reflective layer 70 may include a colloid and a light-absorbing material doped in the colloid.

The anti-reflective layer 70 can inhibit light reflection, and can absorb light of a specific wavelength, for example, visible light or light in the IR band. This particular wavelength of light ranges from about 400 nanometers to about 750 nanometers. The anti-reflection layer 70 has an absorption rate of greater than 50% for light having a wavelength between about 400 nanometers and about 750 nanometers.

In some embodiments, the anti-reflection layer 70 may include semiconductor materials, organic insulating materials, or inorganic insulating materials, but the present disclosure is not limited thereto. In some embodiments, the semiconductor material may include amorphous silicon, but the disclosure is not limited thereto. In some embodiments, the organic insulating material may include acrylic polymer, polyimide, polyester, epoxy resin, or combinations thereof, or other suitable organic insulating materials. In some embodiments, inorganic insulating materials suitable for the anti-reflective layer 70 may include silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, or combinations thereof, or other suitable inorganic insulating materials. In some embodiments, when the anti-reflection layer 70 is a semiconductor material, its thickness may be between 1 nanometer (nm; nanometers) and 2 micrometers (μm; micrometers), for example, it may be between 10 nanometers (nm; micrometers). to 2 microns, for example, between 1 nanometer and 5 nanometers, but the present disclosure is not limited thereto. In some embodiments, when the anti-reflective layer 70 is an organic insulating material, its thickness may be between about 1 micron and about 15 microns, but the present disclosure is not limited thereto. In some embodiments, when the anti-reflection layer 70 is an inorganic insulating material, its thickness may be between about 1 nanometer and about 100 nanometers, but the present disclosure is not limited thereto. In some embodiments, when the anti-reflective layer 70 is an organic insulating material, the optical properties of the material itself or the addition of a color resist can be used to absorb light of a specific wavelength. In addition, the organic insulating material itself can also be qualitatively changed through a manufacturing process (for example, a high-temperature manufacturing process) to increase the absorption of light of a specific wavelength.

The purpose of providing the anti-reflective layer 70 is to prevent the light signal penetrating the light sensing element 16 from being reflected by other structures (for example, the substrate) below the light sensing element 16, because the light signal hitting other structures (for example, the substrate) is reflected back to the light sensor. The light signal of the detection element 16 will interfere with the light signal reflected by the fingerprint that the light sensing element 16 senses, thereby affecting the quality of the output fingerprint image.

Referring to FIG. 3 , according to an embodiment of the present disclosure, an electronic device 10 is provided. FIG. 3 is a schematic cross-sectional view of the electronic device 10 .

The structure and material composition of each component in the electronic device 10 shown in FIG. 3 is similar to the electronic device 10 shown in FIG. 1 , and will not be described again here. The main difference from Figure 1 is that in Figure 3, the anti-reflection unit 12 includes a substrate 12' and an anti-reflection layer 70, and the anti-reflection layer 70 is disposed on one side of the substrate 12'. Specifically, the substrate 12' includes a first side S1 and a second side S2 opposite to the first side S1. The anti-reflective layer 70 may be disposed on the first side S1 of the substrate 12', and the circuit layer 14 may be disposed on the second side S2. Circuit layer 14 may include thin film transistors 33 . The light sensing element 16 is disposed on the circuit layer 14 and is electrically connected to the thin film transistor 33 . The material composition and dimensions of the anti-reflective layer 70 and other components shown in Figure 3 are as mentioned above and will not be described again here. The anti-reflective layer 70 is disposed under the substrate 12' (first side S1) and can be used to absorb the light signal penetrating the light sensing element 16 and the substrate 12 to prevent the light signal from being reflected back to the light sensing element 16.

Referring to FIG. 4 , according to an embodiment of the present disclosure, an electronic device 10 is provided. FIG. 4 is a schematic cross-sectional view of the electronic device 10 .

The structure and material composition of each component in the electronic device 10 shown in FIG. 4 is similar to that of the sensing device 10 shown in FIG. 3 , and will not be described again here. The main difference from Figure 3 is that in Figure 4 , the electronic device 10 includes a frame 72 , and the sensing device 19 is attached to the frame 72 through the anti-reflective layer 70 . The anti-reflective layer 70 can be disposed on the first side S1 of the substrate 12', the frame 72 can be disposed on the first side S1, and the circuit layer 14 can be disposed on the second side S2.

In FIG. 4 , the anti-reflective layer 70 may include adhesive colloid. According to some embodiments, the anti-reflective layer 70 may include a light-absorbing material. For example, the anti-reflective layer 70 may include a colloid and a light-absorbing material doped in the colloid. In this way, when the sensing device 19 is assembled into the electronic device 10 , the anti-reflective layer 70 of the sensing device 19 can be directly attached to the frame 72 of the electronic device 10 . For example, the anti-reflective layer 70 of the sensing device 19 can be directly attached to the middle frame of the mobile phone module, thereby shortening the manufacturing process and saving costs. In some embodiments, the adhesive colloid may include acrylic, polyurethane (PU), or silicone, but the present disclosure is not limited thereto. In some embodiments, the light-absorbing material can be a color resistor that can absorb light of a specific wavelength, for example, a black color resistor or a green color resistor.

Referring to FIG. 5 , according to an embodiment of the present disclosure, an electronic device 10 is provided. FIG. 5 is a schematic cross-sectional view of the electronic device 10 .

The structure and material composition of each component in the electronic device 10 shown in FIG. 5 is similar to the electronic device 10 shown in FIG. 1 , and will not be described again here. The main difference from Figure 1 is that in Figure 5, the anti-reflection unit 12 includes a substrate 12' and an anti-reflection layer 74. That is, an anti-reflection layer 74 is additionally provided between the substrate 12' and the circuit layer 14. The anti-reflective layer 74 is provided on one side of the substrate 12'. Specifically, the substrate 12' includes a first side S1 and a second side S2 opposite to the first side S1. The anti-reflective layer 74 may be disposed on the second side S2 of the substrate 12'.

In some embodiments, the anti-reflective layer 74 may be composed of a metal material or an oxide film. In some embodiments, when the anti-reflection layer 74 is a metal material, it may include copper (Cu), aluminum (Al), molybdenum (Mo), indium (In), ruthenium (Ru), tin (Sn), Gold (Au), platinum (Pt), zinc (Zn), silver (Ag), titanium (Ti), lead (Pb), nickel (Ni), chromium (Cr), magnesium (Mg), palladium (Pd), Or alloys of the above materials, or combinations of the above materials, or other suitable metal materials.

Referring to FIG. 6 , according to an embodiment of the present disclosure, an electronic device 10 is provided. FIG. 6 is a schematic cross-sectional view of the electronic device 10 .

The structure and material composition of each component in the electronic device 10 shown in FIG. 6 is similar to the electronic device 10 shown in FIG. 1 and will not be described again here. The main difference from Figure 1 is that in Figure 6, the anti-reflection unit 12 includes a substrate 12' and an anti-reflection layer 74, and the anti-reflection layer 74 is disposed on one side of the substrate 12'. Specifically, the anti-reflective layer 74 may be disposed on the first side S1 of the substrate 12', and the circuit layer 14 may be disposed on the second side S2. The material composition of the anti-reflective layer 74 shown in Figure 6 is similar to the anti-reflective layer 74 shown in Figure 5 and will not be described again here.

Referring to FIG. 7 , according to an embodiment of the present disclosure, an electronic device 10 is provided. FIG. 7 is a schematic cross-sectional view of the electronic device 10 .

The structure and material composition of each component in the electronic device 10 shown in FIG. 7 is similar to the electronic device 10 shown in FIG. 1 , and will not be described again here. The main difference from Figure 1 is that in Figure 7, the anti-reflection unit 12 may include a substrate 12' and an anti-reflection layer 74. Antireflective layer 74 may include multiple layers (74a, 74b, 74c). That is, multiple anti-reflective layers may be added between the substrate 12' and the circuit layer 14, including the first anti-reflective layer 74a, the second anti-reflective layer 74b, and the third anti-reflective layer 74c. However, this disclosure does not Limited to this. Other number of anti-reflective layers are also applicable to the present disclosure, for example, two layers or four or more layers (inclusive). In Figure 7, the first anti-reflective layer 74a is disposed on the substrate 12, the second anti-reflective layer 74b is disposed on the first anti-reflective layer 74a, and the third anti-reflective layer 74c is disposed on the second anti-reflective layer 74b. . The anti-reflective layer 74 is provided on one side of the substrate 12'. Specifically, the substrate 12' includes a first side S1 and a second side S2 opposite to the first side S1. The anti-reflective layer 74 may be disposed on the second side S2 of the substrate 12'.

In some embodiments, the first anti-reflective layer 74a is made of an insulating material, the second anti-reflective layer 74b is made of a metal material, and the third anti-reflective layer 74c is made of an insulating material. However, the present disclosure is not limited thereto, and other material combinations are also applicable. This disclosure. According to some embodiments, the anti-reflective layer 74 may include a first inorganic layer 74a; a metal layer 74b disposed on the first inorganic layer 74b; and a second inorganic layer 74c disposed on the metal layer 74b, but this disclosure Not limited to this.

In some embodiments, the insulating material used in the anti-reflection layer may include inorganic insulating materials or organic insulating materials. In some embodiments, the inorganic insulating material may include silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, a combination of the foregoing, or other suitable inorganic insulating materials. In some embodiments, the organic insulating material may include perfluoroalkoxy alkane (PFA), polytetrafluoroethylene (PTFE), and perfluorinated ethylene propylene (FEP). , polyethylene, or a combination of the foregoing, or other suitable organic insulating materials. In some embodiments, the metal materials used in the anti-reflection layer may include copper (Cu), aluminum (Al), molybdenum (Mo), indium (In), ruthenium (Ru), tin (Sn), gold (Au) ), platinum (Pt), zinc (Zn), silver (Ag), titanium (Ti), lead (Pb), nickel (Ni), chromium (Cr), magnesium (Mg), palladium (Pd), or the above materials alloy, or a combination of the above materials, or other suitable metal materials. In some embodiments, when the anti-reflection layer is an insulating material, its thickness ranges from about 500 angstroms to about 1,000 angstroms. In some embodiments, when the anti-reflection layer is a metallic material, its thickness ranges from about 40 angstroms to about 200 angstroms, or from about 40 angstroms to about 160 angstroms.

The present disclosure uses multiple anti-reflection layers to cause the reflected light generated when the light signal penetrating the light sensing element 16 passes through different films to interfere destructively with each other, canceling the light intensity, and achieving the anti-reflection effect.

In some embodiments, the surface of the anti-reflective layer 12 may include multiple microstructures (not shown). The anti-reflective layer 12 may have an uneven surface. For example, the surface of the anti-reflection layer 12 has a surface undulation structure. For example, the surface of the anti-reflection layer 12 has a curved structure. In this way, the microstructure on the surface of the anti-reflective layer 12 can disperse the light, allowing the light signal that penetrates the light sensing element 16 to hit the anti-reflective layer and be diffused, thereby reducing the amount of light reflected back to the light sensing element 16 light signal. The surface of the anti-reflective layer 12 may be a surface closer to the display 20 .

Referring to FIG. 8A , according to an embodiment of the present disclosure, an electronic device 10 is provided. FIG. 8A is a schematic cross-sectional view of the electronic device 10 .

The structure and material composition of each component in the electronic device 10 shown in FIG. 8A are similar to the electronic device 10 shown in FIG. 1 , and will not be described again here. The main difference from FIG. 1 is that in FIG. 8A , the anti-reflection unit 12 includes a first flat layer 36 and a second flat layer 42 disposed on the thin film transistor 33 . The first flattening layer 36 and the second flattening layer 42 are made of light-absorbing materials instead of raw materials. The first flat layer 36 and the second flat layer 42 may be light absorbing layers, for example. According to some embodiments, the first flat layer 36 and the second flat layer 42 may include organic materials or inorganic materials added with black substances (eg, carbon black or organic pigments), such as black photoresist or black resin, but the present disclosure Not limited to this.

The first flat layer 36 and the second flat layer 42 can suppress light reflection, and can absorb light of a specific wavelength, for example, visible light or light in the IR band. This particular wavelength of light ranges from about 400 nanometers to about 750 nanometers. The first flat layer 36 and the second flat layer 42 have an absorption rate of greater than 50% for light having a wavelength between about 400 nanometers and about 750 nanometers.

The first flat layer 36 located under the light sensing element 16 and the second flat layer 42 surrounding the light sensing element 16 are replaced with black photoresist or black resin in order to absorb the light signal penetrating the light sensing element 16 , to prevent the light signal penetrating the light sensing element 16 from being reflected back to the light sensing element 16 by other structures below the light sensing element 16, because the light signal reflected from other structures back to the light sensing element 16 will be the same as the light signal reflected back from the fingerprint. The light signals from the light sensing element 16 are also received by the light sensing element 16 , thereby affecting the quality of the output fingerprint image. In addition, the second flat layer 42 surrounding the photo-sensing element 16 can also absorb stray light from all directions directed to the photo-sensing element 16 . This improves the quality of the output fingerprint image.

Referring to FIG. 8B , according to an embodiment of the present disclosure, an electronic device 10 is provided. FIG. 8B is a schematic cross-sectional view of the electronic device 10 .

The structure and material composition of each component in the electronic device 10 shown in FIG. 8B are similar to the electronic device 10 shown in FIG. 1 , and will not be described again here. The main difference from FIG. 1 is that in FIG. 8B , the anti-reflection unit 12 includes a first flat layer 36 disposed on the thin film transistor 33 and located below the light sensing element 16 . The first flat layer 36 uses light-absorbing material instead of raw materials. The first flat layer 36 may be a light absorbing layer, for example. According to some embodiments, the first flat layer 36 may include organic materials or inorganic materials, such as black photoresist or black resin, added with black substances (eg, carbon black or organic pigments), but the present disclosure is not limited thereto.

Referring to FIG. 8C , according to an embodiment of the present disclosure, an electronic device 10 is provided. FIG. 8C is a schematic cross-sectional view of the electronic device 10 .

The structure and material composition of each component in the electronic device 10 shown in FIG. 8C is similar to the electronic device 10 shown in FIG. 1 , and will not be described again here. The main difference from FIG. 1 is that in FIG. 8C , the anti-reflection unit 12 includes a second flat layer 42 disposed on the thin film transistor 33 and surrounding the photo-sensing element 16 to expose part of the photo-sensing element 16 . The second flat layer 42 uses light-absorbing material instead of raw materials. The second flat layer 42 may be a light absorbing layer, for example. According to some embodiments, the second flat layer 42 may include organic materials or inorganic materials added with black substances (eg, carbon black or organic pigments), such as black photoresist or black resin, but the present disclosure is not limited thereto.

As an optical fingerprint sensing device, the electronic device of the present disclosure is suitable for electronic devices with a display, including an optical fingerprint sensing array (for example, light sensing element 16) disposed below the display for realizing under-screen optical fingerprint sensing, An optical path guide structure is disposed between the display and the optical fingerprint sensing array and transmits the light signal reflected by the fingerprint to the optical fingerprint sensing array, and is disposed below the optical fingerprint sensing array for absorbing and penetrating optical fingerprint sensing. The light-absorbing layer of the optical signal of the array may be a single-layer or multi-layer anti-reflective layer used to prevent the light signal penetrating the optical fingerprint sensing array from being reflected back to the optical fingerprint sensing array.

The electronic device of the present disclosure includes a sensing device, and the sensing device may include an anti-reflection unit. According to some embodiments, unnecessary reflected signals can be prevented from interfering with sensing determination, thereby increasing safety and convenience.

The components of some of the above embodiments are described so that those with ordinary knowledge in the technical field to which this disclosure belongs can better understand the viewpoints of the embodiments of this disclosure. Those with ordinary skill in the art to which this disclosure belongs should understand that they can design or modify other processes and structures based on the embodiments of this disclosure to achieve the same purposes and/or advantages as the embodiments introduced here. Those with ordinary knowledge in the technical field to which this disclosure belongs should also understand that such equivalent structures do not deviate from the spirit and scope of this disclosure, and they can do various things without departing from the spirit and scope of this disclosure. Various changes, substitutions and substitutions. Therefore, the protection scope of the present disclosure shall be subject to the scope of the appended patent application. In addition, although the disclosure has been disclosed with several preferred embodiments as above, this is not intended to limit the disclosure.

Reference throughout this specification to features, advantages, or similar language does not imply that all features and advantages that may be realized with the present disclosure should or can be realized in any single embodiment of the present disclosure. In contrast, language referring to features and advantages is to be understood to mean that a particular feature, advantage, or characteristic described in connection with the embodiment is included in at least one embodiment of the present disclosure. Thus, discussions of features and advantages, and similar language, throughout this specification may, but are not necessarily, representative of the same embodiments.

Furthermore, the described features, advantages, and characteristics of the disclosure may be combined in any suitable manner in one or more embodiments. From the description herein, those skilled in the relevant art will appreciate that the present disclosure may be practiced without one or more of the specific features or advantages of a particular embodiment. In other instances, additional features and advantages may be identified in certain embodiments that may not be present in all embodiments of the present disclosure.

10: Electronic devices 12:Anti-reflective unit 12’:Substrate 14:Circuit layer 16:Light sensing element 18: Optical path guidance structure 19: Sensing device 20:Display 20S: Surface of the monitor 22: Buffer layer 24: Semiconductor layer 26: First insulation layer 28: First metal layer 30: Interlayer dielectric layer 31,37,43:Open 32: Second metal layer 33:Thin film transistor 34: Second insulation layer 36: First flat layer 38:Third metal layer 40:Third insulation layer 42: Second flat layer 44:Fourth insulation layer 46:Electrode layer 48:Third flat layer 50:Fifth insulation layer 52: The fourth metal layer 52’:Open your mouth 54:Sixth insulation layer 56:The fourth flat layer 58: First dielectric layer 60: First light-shielding layer 60’: first opening 62: Second dielectric layer 64: Second light-shielding layer 64’: Second opening 66:Seventh insulation layer 68: Microlens 70,74: Anti-reflective layer 72:Frame 74a: First anti-reflective layer 74b: Second anti-reflective layer 74c: Third anti-reflective layer S1: The first side of the substrate S2: The second side of the substrate

The embodiments of the disclosure will be described in detail below with reference to the accompanying drawings. It should be noted that various features are not drawn to scale and are for illustrative purposes only. In fact, the dimensions of the components may be enlarged or reduced to clearly demonstrate the technical features of the embodiments of the present disclosure. Figure 1 is a schematic cross-sectional view of an electronic device according to an embodiment of the present disclosure; Figure 2 is a schematic cross-sectional view of an electronic device according to an embodiment of the present disclosure; Figure 3 is a schematic cross-sectional view of an electronic device according to an embodiment of the present disclosure; Figure 4 is a schematic cross-sectional view of an electronic device according to an embodiment of the present disclosure; Figure 5 is a schematic cross-sectional view of an electronic device according to an embodiment of the present disclosure; Figure 6 is a schematic cross-sectional view of an electronic device according to an embodiment of the present disclosure; Figure 7 is a schematic cross-sectional view of an electronic device according to an embodiment of the present disclosure; Figure 8A is a schematic cross-sectional view of an electronic device according to an embodiment of the present disclosure; Figure 8B is a schematic cross-sectional view of an electronic device according to an embodiment of the present disclosure; Figure 8C is a schematic cross-sectional view of an electronic device according to an embodiment of the present disclosure.

10: Electronic devices

12:Anti-reflective unit

12’:Substrate

14:Circuit layer

16:Light sensing element

18: Optical path guidance structure

19: Sensing device

20:Display

20S: Surface of the monitor

22: Buffer layer

24: Semiconductor layer

26: First insulation layer

28: First metal layer

30: Interlayer dielectric layer

31,37,43:Open

32: Second metal layer

33:Thin film transistor

34: Second insulation layer

36: First flat layer

38:Third metal layer

40:Third insulation layer

42: Second flat layer

44:Fourth insulation layer

46:Electrode layer

48:Third flat layer

50:Fifth insulation layer

52: The fourth metal layer

52’:Open your mouth

54:Sixth insulation layer

56:The fourth flat layer

58: First dielectric layer

60: First light-shielding layer

60’: first opening

62: Second dielectric layer

64: Second light-shielding layer

64’: Second opening

66:Seventh insulation layer

68: Microlens

70:Anti-reflective layer

S1: The first side of the substrate

S2: The second side of the substrate

Claims (11)

An electronic device includes: a sensing device, the sensing device includes: an anti-reflection unit, including a substrate and an anti-reflection layer, the anti-reflection layer is disposed on the substrate, and the anti-reflection layer includes an inorganic insulation Material; a circuit layer, including a thin film transistor, arranged on the anti-reflection unit; and a light sensing element, arranged on the circuit layer, and electrically connected to the thin film transistor. The electronic device of claim 1, wherein the thickness of the anti-reflective layer is between 1 nanometer and 100 nanometers. The electronic device of claim 1, wherein the surface of the anti-reflective layer includes a plurality of microstructures. An electronic device includes: a sensing device, the sensing device includes: a circuit layer including a thin film transistor; a light sensing element disposed on the circuit layer and electrically connected to the thin film transistor; And an anti-reflection unit is disposed on the circuit layer and used to absorb light penetrating the light sensing element. The electronic device of claim 4, wherein the anti-reflection unit is disposed on the thin film transistor. The electronic device of claim 4, wherein the anti-reflection unit includes a first flat layer and a second flat layer, the first flat layer is located under the light sensing element The second flat layer is disposed on the first flat layer, and the second flat layer surrounds the light sensing element. The electronic device of claim 6, wherein the first flat layer and the second flat layer include organic materials or inorganic materials added with black substances. The electronic device of claim 4, wherein the anti-reflection unit includes a flat layer located under the light sensing element, and the flat layer includes an organic material or an inorganic material added with a black substance. The electronic device of claim 4, wherein the anti-reflection unit includes a flat layer surrounding the light sensing element, and the flat layer includes an organic material or an inorganic material added with a black substance. An electronic device includes: a sensing device, the sensing device includes: a substrate including a first side and a second side opposite to the first side; an anti-reflection layer disposed on the first side ; a circuit layer, including a thin film transistor, disposed on the second side; and a light sensing element, disposed on the circuit layer, and electrically connected to the thin film transistor; and a frame, wherein, The sensing device is attached to the frame through the anti-reflective layer. The electronic device of claim 10, wherein the anti-reflection layer includes a colloid and a light-absorbing material doped in the colloid.

Images