TWI828538B - Air intake device and substrate processing equipment - Google Patents

Abstract

The invention provides an air inlet device for substrate processing equipment. The substrate processing equipment includes a reaction chamber. The air inlet device is located above the reaction chamber. The air inlet device is provided with cooling fluid channels inside and is connected to multiple external processes. There are multiple process gas input pipelines of the gas source, and multiple process gas output channels are opened inside the gas inlet device; the process gas input pipelines provide process gas to the reaction chamber through at least one corresponding process gas output channel; the cooling fluid channel surrounds The process gas input pipeline is arranged, and multiple process gas output channels are arranged circumferentially around the cooling fluid channel. The cooling fluid channel controls the temperature of the process gas input pipeline and the process gas output channel. The present invention also provides a substrate processing apparatus. The cooling fluid channel of the present invention can effectively cool down the process gas input pipeline and the process gas output channel, avoid the deposition of process gas and generate particle pollutants, and greatly improve the substrate yield.

Description

Air intake device and substrate processing equipment

The invention relates to the field of semiconductor equipment, and in particular to an air inlet device and substrate processing equipment.

CVD (Chemical Vapor Deposition) refers to the process in which reactive substances react chemically on the surface of a substrate to form a thin film under gaseous conditions. CVD equipment is equipment that realizes chemical vapor deposition on the surface of a substrate. As a typical CVD equipment, MOCVD (Metalorganic Chemical Vapor Deposition) equipment can grow a crystal structure for light emitting, such as GaN (gallium nitride), on the surface of a substrate (such as a sapphire substrate), providing Required conditions such as temperature, pressure, chemical gas composition, etc.

The MOCVD processing equipment includes a reaction chamber. There is a tray for placing the substrate in the reaction chamber. There are also multiple heaters under the tray. The tray evenly transfers the heat radiated by the heater to the substrate. There is an air inlet device above the tray, and a plurality of guide fins are fixedly installed on the outer wall of the air inlet device. The process gas enters the air inlet device through the air inlet pipe, enters the guide fins from the air outlet on the side wall of the air inlet device, and is finally guided into the reaction chamber through the guide fins.

During the process, the tray drives the substrate to rotate at high speed, so that different types of process gases arriving on the upper surface of the tray are fully mixed under the drive of the high-speed rotating tray. The process gas reacts at a specific temperature and deposits on the surface of the substrate W to form a crystal structure of the required material. The substrate temperature determines the rate of material deposition on the substrate W.

However, the heat from the heater is also radiated throughout the reaction chamber. Although the air intake device is made of stainless steel and has a cooling fluid channel inside it, the guide fins are far away from the cooling fluid channel, so the heat of the guide fins is difficult to be absorbed by the cooling fluid channel; at the same time, the guide fins Its thin sheet structure results in poor thermal conductivity and a large area for heat radiation. On the other hand, a sealing ring is provided between the guide fins and the air intake device, and the sealing ring will also affect the heat transfer between the guide fins and the air intake device. A guide plate is also fixed on the bottom surface of the air inlet device. The fixed surface of the guide plate has a large thermal resistance, so the cooling effect of the guide plate by the cooling fluid channel is also poor.

Based on the above reasons, the guide fins and guide plates have a relatively high temperature during the process, and the process gas is easily deposited on the guide fins and guide plates. Over time, the deposits on the guide fins and guide plates peel off and cause particle contamination of the reaction chamber. These particle contamination can cause defects on the substrate surface and affect the yield of the substrate.

How to provide an air inlet device that can reduce the deposition of process gas on its surface and reduce particle pollution in the reaction chamber is a matter of concern in the industry.

The object of the present invention is to provide an air inlet device and a substrate processing equipment that can transport processes into the reaction chamber in layers without additional guide fins outside the air inlet device by changing the arrangement of the air inlet device and cooling channels. gas, and ensures that the process gas passes through the substrate surface as horizontally as possible. The invention avoids particle pollutants generated by the deposition of the process gas on the guide fins, and greatly improves the substrate yield. At the same time, the present invention uses the cooling fluid channel inside the air intake device to control the temperature of the process gas input pipeline and the process gas output channel in the air intake device, thereby further preventing the process gas from depositing inside the air intake device and on the surface of the air intake device.

In order to achieve the above object, the present invention provides an air inlet device for substrate processing equipment. The substrate processing equipment includes a reaction chamber. The air inlet device is located above the reaction chamber. There is a cooling device inside the air inlet device. The fluid channel and multiple process gas input pipelines are respectively connected to multiple external process gas sources. There are multiple process gas output channels inside the gas inlet device; the process gas input pipeline passes through at least one corresponding process gas output channel. The channel provides process gas into the reaction chamber; the cooling fluid channel is arranged around the process gas input pipeline, and a plurality of the process gas output channels are arranged circumferentially around the cooling fluid channel, and the cooling fluid channel has a positive impact on the process. The gas input pipeline and the process gas output channel are temperature controlled.

Optionally, a plurality of buffer chambers that are not connected to each other are provided inside the air inlet device; the plurality of buffer chambers are respectively connected with the plurality of process gas input pipelines by air paths; the buffer chambers are used to slow down the flow of gas into the corresponding process gas output channels. Process gas flow rate.

Optionally, the air inlet device is also provided with multiple gas distribution chambers that are not connected to each other. The multiple gas distribution chambers are respectively connected by gas paths between the multiple buffer chambers and the corresponding process gas output channels; through the communication The plurality of uniform holes in the buffer chamber and the corresponding gas distribution chamber homogenize the process gas flowing from the buffer chamber into the corresponding gas distribution chamber.

Optionally, the buffer chamber has an annular structure, and multiple buffer chambers are arranged concentrically; the gas distribution chamber has an annular structure, which is arranged below the corresponding buffer chamber, and the multiple gas distribution chambers are arranged concentrically.

Optionally, the process gas output channel is uniformly or non-uniformly distributed on the outer periphery of the corresponding gas distribution cavity along the circumferential direction of the gas distribution cavity; the process gas output channel has a straight-shaped structure, and its length direction is the radial direction of the gas distribution cavity. ; The process gas output channels corresponding to the same gas distribution chamber are located at the same height; the process gas output channels corresponding to different gas distribution chambers are located at different heights.

Optionally, the process gas output channel of the outer ring gas distribution chamber is higher than the process gas output channel of the adjacent inner ring gas distribution chamber.

Optionally, the first end of the process gas output channel is connected to the corresponding process gas input pipeline; the second end of the process gas output channel is connected to the inside of the reaction chamber; from the first end of the process gas output channel to the process gas At the second end of the output channel, the cross-sectional area of the process gas output channel gradually increases.

Optionally, the number of process gas output channels corresponding to each gas distribution chamber is the same or different.

Optionally, the first end of the process gas input pipeline is connected to the corresponding process gas source; the second end of the process gas input pipeline is located in the air inlet device and is connected to the process gas injection port above the corresponding buffer chamber. Buffer cavity; the projections of the process gas injection port and the gas equalization hole corresponding to the same buffer cavity on the horizontal plane do not overlap.

Optionally, the gas inlet device includes a lower section; the lower section includes a mounting plate; a plurality of the process gas injection ports are formed in the mounting plate and connect the top surface and the bottom surface of the mounting plate.

Optionally, the lower section also includes a first component of the lower section and a second component of the lower section; the top surface and the bottom surface of the first component of the lower section are respectively welded to the bottom surface of the mounting plate and the top surface of the second component of the lower section; The plurality of buffer cavities are formed on the upper surface of the first component of the lower section and block the top of the buffer cavity through the bottom surface of the mounting plate; the multiple gas distribution cavities are formed on the top surface of the second component of the lower section and pass through The bottom surface of the first component of the lower section blocks the top of the gas distribution chamber; the air distribution hole is formed on the lower surface of the first component of the lower section and communicates with the corresponding buffer chamber and the gas distribution chamber.

Optionally, the first component of the lower section and the second component of the lower section are made of pure nickel.

Optionally, the air inlet device further includes an upper section; the bottom surface of the upper section is welded to the top surface of the mounting plate; the top surface of the upper section extends outward to form an annular support seat; the outer wall of the upper section is provided with an annular recess concentric with it. groove.

Optionally, a cleaning gas input pipeline connected to the annular groove is also provided in the upper section for inputting cleaning gas into the reaction chamber.

Optionally, the cooling fluid channel includes a first cooling chamber and a second cooling chamber connected to an external cooling fluid source; the first cooling chamber is disposed inside the upper section; the second cooling chamber is disposed inside the lower section. Inside, the buffer chamber and gas distribution chamber are arranged around the outer periphery of the second cooling chamber; the heat of the upper section and the lower section is guided through the first cooling cavity and the second cooling cavity.

Optionally, the cooling fluid channel also includes a third cooling chamber disposed inside the lower section; the third cooling chamber is connected to an external cooling fluid source and is located in the second cooling chamber, buffer chamber, gas distribution chamber and process gas output. below the channel.

Optionally, the air inlet device is also provided with a purge gas input pipeline, which extends vertically downward from the center of the top surface of the air inlet device to the center of the bottom surface of the air inlet device.

Optionally, the gas inlet device includes five gas distribution chambers arranged sequentially from outside to inside, which are the first to fifth gas distribution chambers respectively; the process gas in the first, second and fourth gas distribution chambers is a hydride; the process gas in the third and fifth distribution chambers is an organic metal process gas.

The invention also provides a substrate processing equipment, which includes a reaction chamber. The reaction chamber includes a chamber top cover, and an installation hole is dug in the center of the chamber top cover. The substrate processing device includes:

The air inlet device according to the present invention; the air inlet device passes through the mounting hole and is fixedly installed on the top cover of the chamber;

The tray is arranged in the reaction chamber and below the air inlet device, and is used to carry the substrate to be processed; a first through hole is opened in the center area of the tray opposite to the air inlet device to reduce the heat radiated by the tray to the air inlet device.

Optionally, there is a gap between the outer wall of the air inlet device and the inner wall of the installation hole; the clean gas in the annular groove enters the reaction chamber through the gap.

Optionally, the inner wall of the first through hole is provided with an annular protrusion concentric with the first through hole; in the first through hole, an upper pressure plate and a lower pressure plate are respectively provided above and below the protrusion. Pressing plate; the protruding portion is clamped by the upper pressing plate and the lower pressing plate to realize the integrated fixed connection of the upper pressing plate, the lower pressing plate and the tray.

Compared with the prior art, the beneficial effects of the present invention are:

1) The air inlet device and substrate processing equipment of the present invention, by arranging a process gas output channel inside the air inlet device, can transport process gas into the reaction chamber without additional guide fins outside the air inlet device, and ensure The process gas passes through the substrate surface as horizontally as possible; the invention solves the problem that the process gas is easy to deposit on the guide fins to produce particle pollutants, and greatly improves the substrate yield;

2) The heat conduction efficiency between the cooling fluid channel and each component of the air inlet device in the present invention is high, so the cooling fluid channel can effectively absorb the process gas input pipeline (set in the upper section) and the process gas output channel (set in the lower section) (Internal) The heat of the process gas inside prevents the process gas from depositing on the internal and external surfaces of the air inlet device;

3) The present invention slows down the flow rate of the process gas flowing into the corresponding gas distribution chamber through the buffer chamber, and homogenizes the process gas flowing from the buffer chamber into the corresponding gas distribution chamber through the air equalization hole provided between the buffer chamber and the corresponding gas distribution chamber. The uniformity of process gas distribution in the reaction chamber is ensured; the buffer chamber and the corresponding gas distribution chamber in the present invention are arranged up and down to avoid increasing the diameter of the air inlet device and without changing the size of the mounting hole of the chamber top cover. Greatly save economic costs;

4) In the present invention, the cross-sectional area of the process gas output channel gradually increases along the first end of the process gas output channel to the second end of the process gas output channel; this can prevent the process gas from flowing out of the gas distribution chamber too quickly. outflow, ensuring the homogenization of the process gas, and ensuring that the speed of the process gas flowing into the reaction chamber meets actual needs;

5) In the present invention, the process gas output channels corresponding to the same gas distribution chamber are located at the same height, and the process gas output channels corresponding to different gas distribution chambers are located at different heights; therefore, the gas inlet device of the present invention can layer into the reaction chamber Input various process gases to meet actual process needs;

6) The lower section of the air intake device of the present invention is made of pure nickel. Welding is used between the upper section and the lower section of the air intake device and between each component of the lower section to avoid large thermal resistance and improve the efficiency of the air intake device. The efficiency of heat transfer between components;

7) The air inlet device of the present invention is provided with an annular groove on the outer wall of the upper section that is connected to the clean gas source gas path, which can clean the deposits between the upper section and the chamber top cover;

8) In the present invention, a first through hole is opened in the center area of the tray opposite to the air inlet device, which can reduce the heat radiated by the tray to the air inlet device and further reduce the deposition of process gas on the air inlet device.

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts fall within the scope of protection of the present invention.

FIG. 1 shows a substrate processing equipment for a deposition process, which has a reaction chamber 100 in which a substrate W can be processed single-piece or multiple-piece. The reaction chamber 100 includes a chamber top cover 101 and a chamber body 102 . The chamber top cover 101 covers the chamber main body 102, and the chamber top cover 101 and the chamber main body 102 together form an airtight internal processing space. The chamber top cover 101 is usually made of metal material (such as stainless steel). During the process, the temperature of the chamber top cover 101 is cooled through the cooling chamber 103 (pipeline connected to an external cooler) in the chamber top cover 101 . Although the chamber body 102 is shown as cylindrical, it may be of other shapes, such as square, hexagonal, octagonal, or any other suitable shape. A mounting hole 104 is provided in the center of the chamber top cover 101, and a support ring 105 surrounding the mounting hole 104 is fixed on the bottom surface of the chamber top cover 101. The outer edge of the support ring 105 is provided with a step. An annular heat-insulating cover plate 106 is arranged around the support ring 105. The inner edge of the heat-insulating cover plate 106 is provided with an inverted step that matches the step. By matching the step with the inverted step, the heat-insulating cover plate 106 is realized. Fixed on the lower surface of the chamber top cover 101. The heat insulation cover 106 is used to isolate the heat radiated from the reaction chamber to the chamber top cover 101 . The material of the heat insulation cover 106 may be graphite.

The reaction chamber 100 is also provided with an air inlet device 107 (usually made of corrosion-resistant stainless steel with good thermal conductivity), an exhaust device 108 and a tray 109 (usually made of graphite).

As shown in FIG. 1 , the tray 109 is disposed under the chamber top cover and opposite to the air inlet device 107 . A reaction area is formed between the air inlet device 107 and the tray 109 . The process gas is introduced into the reaction area from the gas inlet device 107 to process the substrate W placed on the tray 109 . A plurality of heating elements 120 are typically provided below the tray. The tray 109 is heated by the heating element 120. The tray 109 then transfers the heat energy provided by the heating element 120 to the substrate W. The process gas reacts at a specific temperature and is deposited on the substrate W to form a thin film of the required material. The substrate temperature Determines the rate of material deposition on the substrate W. In some substrate processing equipment, a driving shaft (not shown in the figure) is fixedly connected to the bottom of the tray, and the bottom of the driving shaft passes vertically downward through the bottom wall of the chamber body 102 and is located outside the substrate processing equipment. The substrate W is driven by the drive shaft tray to rotate at a high speed, so that different types of process gases reaching the upper surface of the tray are fully mixed under the drive of the high-speed rotating tray. The drive shaft can be driven by an external motor or cylinder. The exhaust device 108 is used to discharge the gas in the reaction chamber 100 (including both the waste gas generated by the reaction and part of the process gas that will not participate in the reaction in the future).

As shown in Figure 1, the bottom of the air inlet device 107 has a mounting hole 104 located in the reaction chamber 100. The top of the air inlet device 107 has an annular support seat 1073. The support is provided through the top surface of the chamber top cover 101. Seat 1073 provides support. Usually, connecting components (such as bolts) are also used to pass through the support seat 1073 and the chamber top cover 101 in sequence to achieve the fixed installation of the air inlet device 107 on the chamber top cover 101. The gas path of the gas inlet device 107 is connected to an external process gas supply device (not shown in the figure), and is used to transport process gas (including reaction gas and carrier gas) into the reaction chamber 100 .

As shown in FIG. 1 , the air intake device 107 is also provided with a cooling fluid input pipe 114 and a cooling fluid output pipe 115 for providing cooling fluid to the interior of the air intake device and cooling the air intake device 107 . The air inlet device 107 is also provided with a purge gas input pipeline 113 for inputting purge gas into the reaction chamber.

As shown in FIGS. 1 and 2 , the air inlet device 107 is provided with a plurality of first annular gas distribution chambers 1071 spaced apart in the vertical direction. The annular gas distribution chambers 1071 pass through the corresponding air inlet device 107 The process gas input pipeline 111 is connected to the gas supply device. The process gases in the plurality of first annular gas distribution chambers 1071 may be the same or different. The outer wall of the air inlet device 107 is provided with a plurality of second annular gas distribution chambers 1072 spaced apart in the vertical direction. The plurality of second annular gas distribution chambers 1072 are respectively connected to the plurality of first annular gas distribution chambers 1071 . The second annular gas distribution chamber 1072 surrounds the outer periphery of the corresponding first annular gas distribution chamber 1071 . As shown in FIG. 3A , through a plurality of air equalization holes 1074 between the second annular gas distribution chamber 1072 and the corresponding first annular gas distribution chamber 1071 , the first annular gas distribution chamber 1071 is connected to the corresponding second annular gas path through a gas path. The gas distribution chamber 1072 allows the process gas in the second annular gas distribution chamber 1072 to have better uniformity or consistency.

As shown in Figures 1 and 2, a plurality of guide fins 130 are fixedly installed on the outer wall of the air inlet device 107 for guiding the process gas in the plurality of second annular gas distribution chambers 1072 to the reaction chamber 100. Make the process gas pass through the substrate surface as horizontally as possible to ensure the uniformity of the thin film deposited on the substrate surface. The guide fin 130 includes a first guide part 1301 and a second guide part 1302 .

As shown in FIGS. 1 and 2 , the first flow guide part 1301 has a sheet structure. The plurality of first guide portions 1301 are concentric with the air inlet device 107 and respectively surround the plurality of second annular gas distribution cavities 1072 . As shown in FIG. 3B , there is a first gap 1303 between the outer peripheral edge of the bottom surface of the second annular gas distribution chamber and the corresponding first flow guide part 1301 . The top of the first air guide part 1301 is fixedly installed on the outer side wall of the air intake device 107 through air guide fin fixing components (such as screws, not shown in the figure). A sealing ring 1304 is also provided between the first flow guide part 1301 and the air inlet device 107 to prevent process gas leakage. The second flow guide part 1302 has an annular structure, which is fixedly arranged on the bottom periphery of the first flow guide part 1301 and is located below the second annular gas distribution chamber 1072 surrounded by the first flow guide part 1301. The second flow guide portion 1302 corresponding to the first flow guide portion 1301 of the outer ring is higher than the second flow guide portion 1302 corresponding to the first flow guide portion 1301 of the adjacent inner ring.

As shown in FIG. 3B , a first gas channel 1305 is formed between adjacent first flow guide parts 1301 , and a second gas channel 1306 is formed between adjacent second flow guide parts 1302 . Except for the lowermost second annular gas distribution chamber 1072, the process gas in each second annular gas distribution chamber 1072 flows from the corresponding first gap 1303, first gas channel 1305, and second gas channel 1306, and finally flows into the reaction chamber.

As shown in FIGS. 1 and 2 , a guide plate 140 is fixed on the bottom surface of the air inlet device 107 . The process gas in the lowermost second annular gas distribution chamber 1072 is guided into the reaction chamber through the lowermost guide fins 130 and guide plates.

The disadvantage of this air inlet device is that the heat in the reaction chamber is inevitably radiated to the guide fins 130 and the guide plate 140 . The thin structure of the guide fins 130 also results in a large heating area, which makes the temperature easily excessive, making it easy for the process gas to deposit on the surface of the guide fins. When the air intake device 107 conducts heat transfer with the first guide portion 1301 and the second guide portion 1302 of the guide fin 130, the contact area is small and the heat conduction efficiency is low. On the other hand, the provided sealing ring 1304 will further reduce the thermal conductivity between the guide fins 130 and the air intake device 107 . Furthermore, the guide plate 140 is usually installed on the bottom surface of the air inlet device through bolts. The installation surface of the guide plate 140 has a large thermal resistance, and the process gas is easy to deposit on the surface of the guide plate. Over time, the deposits flake off and cause particle contamination of the reaction chamber 100 . These particle contamination will produce defects on the substrate surface, affecting the yield of the substrate W.

The present invention provides an air inlet device 207 for use in substrate processing equipment. The substrate processing equipment includes a reaction chamber 200 . As shown in FIGS. 4 and 5 , the air inlet device 207 is located above the reaction chamber 200 and includes an upper section 217 and a lower section 227 . The upper section 217 passes through the mounting hole 204 of the chamber top cover 201. The top of the upper section 217 extends outward to form an annular support seat 2073. The support seat 2073 is located above the chamber top cover 201 and is fixedly connected to the chamber. Top cover 201. In order to accommodate the thermal expansion and contraction of the upper section 217, a gap is usually provided between the outer wall of the upper section 217 and the inner wall of the mounting hole 204. The lower section 227 is located within the reaction chamber.

As shown in Figures 4 and 5, the air inlet device is provided with a cooling fluid channel 260, multiple process gas input pipelines 211 that are respectively connected to multiple external process gas sources, multiple process gas injection ports 2075, and non-connected pipelines. A plurality of buffer chambers 2071, a plurality of gas distribution chambers 2072 that are not connected to each other, and a plurality of process gas output channels 2076.

An external cooler (also called a cooling fluid source, not shown in the figure) provides cooling fluid to the cooling fluid channel 260 through the cooling fluid input pipe 214, and recovers the cooling fluid in the cooling fluid channel 260 through the cooling fluid output pipe 215. External cooler. The cooling fluid in the present invention may be water or coolant. As shown in FIGS. 4 and 5 , cooling fluid channels 260 are provided around the plurality of process gas input pipes 211 . A plurality of the process gas output channels 2076 are provided in the lower section and arranged circumferentially around the cooling fluid channels. The temperature of the process gas input line 211 and the process gas output channel 2076 is controlled through the cooling fluid channel 260 .

The cooling fluid channel 260 in this embodiment includes two cooling chambers, as shown in FIGS. 4 and 5 , which are a first cooling chamber 261 arranged inside the upper section and a second cooling cavity 262 arranged inside the lower section. In this embodiment, the first cooling chamber 261 and the second cooling chamber 262 are connected. In other embodiments, the first cooling chamber 261 and the second cooling chamber 262 may not be connected, and two cooling fluid input pipes 214 (to provide cooling fluid to the two cooling chambers respectively), two cooling fluid input pipes 214 may be provided in the air inlet device. Cooling fluid output pipe 215 (recovers the cooling fluid in the two cooling chambers respectively).

In another embodiment, as shown in FIG. 6 , the cooling fluid channel 260 further includes a third cooling cavity 263 disposed inside the lower section. The third cooling chamber 263 is located below the second cooling chamber 262 and the process gas output channel 2076 . The third cooling cavity 263 prevents the bottom surface temperature of the air inlet device 207 from being too high and reduces the deposition of process gas on the bottom surface of the air inlet device. In this embodiment, the third cooling chamber 263 is connected with the second cooling chamber 262 . In some other embodiments, the third cooling chamber 263 may not be connected to the second cooling chamber 262 , and cooling fluid is provided to the third cooling chamber 263 through separate cooling fluid input pipes 214 and cooling fluid output pipes 215 .

In another preferred embodiment, as shown in Figures 4 and 5, an auxiliary cooling fluid channel 240 connected to the external cooler is also provided in the side wall of the upper section 217. The auxiliary cooling fluid channel 240 cooperates with the cooling fluid channel 260 to guide the heat of the air intake device 207 and further improve the heat conduction efficiency of the air intake device 207 .

In this embodiment, as shown in Figures 4 and 5, the lower section 227 includes a mounting plate 2271, a first lower section member 2272, and a second lower section member 2273 that are sequentially welded from top to bottom and arranged concentrically. The top surface of plate 2271 is welded to the bottom surface of upper section 217. In a preferred embodiment, the mounting plate 2271, the first lower section member 2272, and the second lower section member 2273 are made of pure nickel material with high thermal conductivity, low thermal radiation coefficient, and corrosion resistance. By welding, the thermal resistance between the components of the air intake device can be reduced.

In this embodiment, as shown in FIGS. 4 and 5 , the mounting plate 2271 and the first lower section member 2272 respectively have second through holes 2621 and third through holes 2622 corresponding to the positions of the first cooling cavity 261 . A first blind hole 2623 corresponding to the position of the first cooling cavity 261 is formed on the top surface of the second component 2273 of the lower section. The second cooling cavity 262 is formed by the second through hole 2621, the third through hole 2622, and the first blind hole 2623.

In this embodiment, as shown in FIGS. 4 and 5 , the plurality of process gas injection ports 2075 are formed in the mounting plate and connect the top surface and the bottom surface of the mounting plate 2271 . As shown in FIGS. 4 and 5 , the buffer chamber 2071 has an annular structure, which is formed on the top surface of the lower first member 2272 and is arranged around the outer periphery of the second cooling chamber 262 . The top of the buffer cavity is blocked through the bottom surface of the mounting plate 2271. In a preferred embodiment, the plurality of buffer cavities 2071 are concentric with the lower section first member 2272. Multiple process gas injection ports 2075 are connected to multiple buffer cavities 2071 respectively.

As shown in Figures 4 and 5, one process gas input pipeline 211 corresponds to one process gas injection port 2075. The first end of the process gas input pipeline 211 is connected to the corresponding process gas source; the second end of the process gas input pipeline 211 is disposed in the upper section and connected to the corresponding buffer chamber 2071 through the corresponding process gas injection port 2075. The high-flow gas in the process gas input pipeline is buffered through the buffer chamber 2071, and the process gas is initially homogenized in the buffer area, thereby slowing down the flow rate of the process gas injected from the corresponding process gas input pipeline 211. In the embodiment of the present invention, the air inlet device 207 includes five buffer cavities 2071 arranged sequentially from the outside to the inside, which are the first to fifth buffer cavities respectively. In some other embodiments, multiple buffer cavities 2071 may also be arranged sequentially from top to bottom.

As shown in FIGS. 4 and 5 , the gas distribution chamber 2072 has an annular structure, which is formed on the top surface of the lower second member 2273 and is arranged around the outer periphery of the second cooling chamber 262 . The top of the gas distribution chamber 2072 is blocked by the bottom surface of the lower section first member 2272 . Multiple gas distribution chambers 2072 are connected to multiple buffer chambers 2071 respectively. In the preferred embodiment, the plurality of gas distribution chambers 2072 are concentric with the lower section second member 2273. In this embodiment, the air inlet device 207 includes five gas distribution chambers 2072 arranged sequentially from the outside to the inside, which are the first to fifth gas distribution chambers respectively. The i-th gas distribution chamber is located directly below the i-th buffer chamber and is connected to the i-th buffer chamber. . In some other embodiments, multiple gas distribution chambers 2072 may also be arranged sequentially from top to bottom. The process gas in the first, second and fourth gas distribution chambers is hydride; the process gas in the third and fifth distribution chambers is organic metal process gas.

As shown in Figures 4, 5, and 7A, a plurality of air equalization holes 2074 are also formed on the bottom surface of the first component 2272 of the lower section. The equalizing holes 2074 communicate with the corresponding buffer chamber 2071 and the gas distribution chamber 2072, and homogenize the process gas flowing from the buffer chamber 2071 into the corresponding gas distribution chamber 2072. It should be noted that the projections of the process gas injection port 2075 and the gas equalizing hole 2074 corresponding to the same buffer chamber 2071 on the horizontal plane do not overlap. This can prevent the process gas in the process gas input pipeline from directly entering the gas distribution chamber 2072 through the gas uniformity hole 2074 directly below the process gas injection port, resulting in uneven distribution of the process gas in the gas distribution chamber 2072.

The process gas output channels 2076 are uniformly or non-uniformly distributed on the outer periphery of the corresponding gas distribution chamber 2072 along the circumferential direction of the gas distribution chamber 2072 . As shown in Figures 4, 5, and 7B, the first end of the process gas output channel 2076 is connected to the corresponding gas distribution chamber 2072, and the second end of the process gas output channel 2076 is connected to the inside of the reaction chamber. The process gas input pipeline 211 sequentially supplies process gas into the reaction chamber through the corresponding process gas injection port 2075, buffer chamber 2071, gas distribution chamber 2072, and multiple process gas output channels 2076.

In this embodiment, a plurality of process gas output channels 2076 are evenly distributed around the periphery of each gas distribution chamber 2072, and the number of process gas output channels 2076 corresponding to each gas distribution chamber 2072 is the same or different. By controlling the number of process gas output channels 2076 corresponding to each gas distribution chamber 2072, the flow rate of the process gas flowing from the gas distribution chamber 2072 into the reaction chamber is controlled.

In a preferred embodiment, as shown in FIGS. 4 , 5 , and 7B , the process gas output channel 2076 has a horizontal straight-line structure, and its length direction is the radial direction of the gas distribution chamber 2072 . This allows the process gas to pass through the substrate surface as horizontally as possible and evenly distribute on the substrate surface, effectively improving the uniformity of the deposited film on the substrate surface. In the present invention, the process gas output channel 2076 of the outer ring gas distribution chamber 2072 is higher than the process gas output channel 2076 of the adjacent inner ring gas distribution chamber 2072. Therefore, the present invention can inject a variety of process gases into the reaction chamber in layers at a vertical height, preventing the multiple process gases from reacting in advance before reaching the surface of the substrate W, and allowing the cooling fluid channel 260 located in the lower section to be in contact with the process gas output The heat transfer area of channel 2076 is increased.

In this embodiment, from the first end of the process gas output channel 2076 to the second end of the process gas output channel 2076, the cross-sectional area of the process gas output channel 2076 gradually increases. This can not only prevent the process gas from flowing out of the gas distribution chamber 2072 too quickly, ensure the homogeneity of the process gas, but also allow the process gas to flow into the reaction chamber at a speed that meets actual needs.

The present invention sets a process gas output channel 2076 inside the air inlet device 207. It can transport the process gas into the reaction chamber without additional guide fins 130 and guide plates 140 outside the air inlet device, and ensure that the process gas is as large as possible. horizontally across the substrate surface. The present invention solves the problem that the process gas is easily deposited on the guide fins 130 and the guide plate 140 to produce particulate pollutants, and greatly improves the substrate yield.

The present invention improves the thermal conductivity of each component of the air intake device by changing the material of the air intake device 207 and the connection method between the various components of the air intake device, and there is no large thermal resistance between the various components. Therefore, the auxiliary cooling fluid channel 240 inside the air inlet device of the present invention can effectively control various components of the air inlet device 207, as well as the process gas input pipeline 211, buffer chamber 2071, gas distribution chamber 2072, and process gas output in the air inlet device. The temperature of the channel 2076 is controlled to prevent process gas from depositing on the internal and external surfaces of the gas inlet device 207 .

The buffer chamber 2071 and the corresponding gas distribution chamber 2072 in the present invention are arranged up and down, which avoids increasing the diameter of the air inlet device 207 and does not need to change the size of the mounting hole of the chamber top cover 201, thus greatly saving economic costs.

In a preferred embodiment, as shown in FIG. 8 , the outer side wall of the upper section 217 is provided with an annular groove 2171 concentric with the upper section 217 . The upper section is also provided with a clean gas input pipeline 212 connected to the annular groove 2171 for inputting clean gas into the reaction chamber. The cleaning gas can also clean deposits on the outer side wall of the upper section 217 and the inner side wall of the mounting hole 204 .

In another embodiment, as shown in Figure 8, a purge gas input pipeline 213 is also provided in the air inlet device, which extends vertically downward from the center of the top surface of the upper section 217 to the center of the bottom surface of the lower section 227. Used to introduce purge gas into the reaction chamber.

The present invention also provides a substrate processing equipment, as shown in Figure 4, including a reaction chamber. The reaction chamber includes a chamber top cover 201. A mounting hole 204 is dug in the center of the chamber top cover. The substrate processing device includes Air intake device 207 and tray 209 according to the present invention.

The air inlet device 207 passes through the installation hole 204 and is fixedly installed on the chamber top cover 201 .

The tray 209 is disposed in the reaction chamber and located below the air inlet device, and is used to carry the substrate W to be processed. As shown in FIG. 9 , a first through hole 2091 is opened in the center area of the tray opposite to the air inlet device 207 to reduce the heat radiated by the tray to the air inlet device 207 and further reduce the deposition of process gas on the air inlet device 207 .

The inner wall of the first through hole 2091 is provided with an annular protruding portion 2092 concentric with the first through hole 2091; in the first through hole, upper pressure plates 2093 and 2093 are respectively provided above and below the protruding portion 2092. The lower pressure plate 2094 (both the upper pressure plate and the lower pressure plate are made of materials with low thermal radiation coefficient); by clamping the protruding portion with the upper pressure plate 2093 and the lower pressure plate, the upper pressure plate 2093, the lower pressure plate 2094, and the tray 209 are integrated and fixedly connected. The lower pressure plate is driven by an external driving device (not shown in the figure), so that the upper pressure plate 2093, the lower pressure plate 2094, and the tray 209 are integrated to rotate around the central axis of the lower pressure plate.

The above are only specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto. Any person familiar with the technical field can easily think of various equivalent modifications within the technical scope disclosed by the present invention. Or replacement, these modifications or replacements should be covered by the protection scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.

100. Reaction chamber; 101. Top cover; 102. Chamber body; 103. Cooling chamber; 104. Mounting hole; 105. Support ring; 106. Insulation cover; 107. Air inlet device; 1071. First ring Gas distribution chamber; 1072, second annular gas distribution chamber; 1073, support seat; 1074, air uniformity hole; 108, exhaust device; 109, tray; 111, process gas input pipeline; 113, purge gas input pipeline; 114. Cooling fluid input pipe; 115. Cooling fluid output pipe; 120. Heating element; 130. Guide fins; 1301. First guide part; 1302. Second guide part; 1303. First gap; 1304. Sealing Circle; 1305, first gas channel; 1306, second gas channel; 140, guide plate; W, substrate. 200. Reaction chamber; 201. Chamber top cover; 204. Installation hole; 207. Gas inlet device; 2071. Buffer chamber; 2072. Gas distribution chamber; 2073. Support seat; 2074. Air uniformity hole; 2075. Process gas injection port ; 2076. Process gas output channel; 211. Process gas input pipeline; 212. Clean gas input pipeline; 213. Purge gas input pipeline; 214. Cooling fluid input pipeline; 215. Cooling fluid output pipeline; 217. Upper part Section; 2171, annular groove; 227, lower section; 2271, mounting plate; 2272, first component of the lower section; 2273, second component of the lower section; 240, auxiliary cooling fluid channel; 260, cooling fluid channel; 261, No. A cooling cavity; 262, a second cooling cavity; 2621, a second through hole; 2622, a third through hole; 2623, a first blind hole; 263, a third cooling cavity.

In order to explain the technical solution of the present invention more clearly, the drawings required for the description will be briefly introduced below. Obviously, the drawings in the following description are an embodiment of the present invention. For those of ordinary skill in the art, Speaking of which, without any creative effort, you can also obtain other drawings based on these drawings: Figure 1 is a schematic diagram of a substrate processing equipment; Figure 2 is a cross-sectional view of an air intake device; Figure 3A is the A-A view of Figure 2; Figure 3B is a partially enlarged schematic diagram of Figure 2; Figure 4 is a schematic diagram of substrate processing equipment in an embodiment of the present invention; Figure 5 is a cross-sectional view of the air intake device in the embodiment of the present invention; Figure 6 is a cross-sectional view of the air intake device in another embodiment of the present invention; Figure 7A is the B-B view of Figure 5; Figure 7B is the C-C view of Figure 5; Figure 8 is a cross-sectional view of the air intake device in another embodiment of the present invention; Figure 9 is a schematic diagram of the tray structure of the present invention.

200. Reaction chamber; 201. Chamber top cover; 204. Installation hole; 207. Gas inlet device; 2071. Buffer chamber; 2072. Gas distribution chamber; 2073. Support seat; 2074. Air uniformity hole; 2075. Process gas injection port ; 2076. Process gas output channel; 211. Process gas input pipeline; 212. Clean gas input pipeline; 213. Purge gas input pipeline; 214. Cooling fluid input pipeline; 215. Cooling fluid output pipeline; 217. Upper part Section; 2171, annular groove; 227, lower section; 2271, mounting plate; 2272, first component of the lower section; 2273, second component of the lower section; 240, auxiliary cooling fluid channel; 260, cooling fluid channel; 261, No. A cooling cavity; 262, a second cooling cavity; 2621, a second through hole; 2622, a third through hole; 2623, a first blind hole.

Claims (21)

An air inlet device for substrate processing equipment. The substrate processing equipment includes a reaction chamber. The air inlet device is located above the reaction chamber. A cooling fluid channel is provided inside the air inlet device and is connected to the outside. Multiple process gas input pipelines from multiple process gas sources; It is characterized in that there are multiple process gas output channels inside the gas inlet device; the process gas input pipeline passes through at least one corresponding process gas output channel. The channel provides process gas into the reaction chamber; the cooling fluid channel is arranged around the process gas input pipeline, and a plurality of process gas output channels are arranged circumferentially around the cooling fluid channel, and the cooling fluid channel The temperature of the process gas input pipeline and the process gas output channel is controlled. The air inlet device according to claim 1, wherein the air inlet device is provided with a plurality of buffer chambers that are not connected to each other; the plurality of buffer chambers are respectively connected with the plurality of process gas input pipelines by air paths; The flow rate of the process gas flowing into the corresponding process gas output channel is slowed down by the buffer chamber. The air intake device according to claim 2, wherein the air intake device is further provided with a plurality of gas distribution chambers that are not connected to each other, and the plurality of gas distribution chambers are respectively connected by air paths and arranged in the plurality of buffers. between the cavity and the corresponding process gas output channel; through a plurality of gas equalization holes connecting the buffer cavity and the corresponding gas distribution cavity, the process gas flowing from the buffer cavity to the corresponding gas distribution cavity is homogenized change. The air intake device according to claim 3, wherein the buffer chamber has an annular structure, and the plurality of buffer chambers are concentrically arranged; the gas distribution chamber has an annular structure, which is arranged below the corresponding buffer chamber, The plurality of gas distribution chambers are arranged concentrically. The gas inlet device according to claim 4, wherein the process gas output channels are uniformly or non-uniformly distributed along the circumferential direction of the gas distribution chamber on the outer periphery of the corresponding gas distribution chamber; the process gas output channel The channel has a straight structure, and its length direction is the direction of the gas distribution chamber. In the radial direction; the process gas output channels corresponding to the same gas distribution chamber are located at the same height; the process gas output channels corresponding to different gas distribution chambers are located at different heights. The air inlet device according to claim 4, wherein the process gas output channel of the gas distribution chamber in the outer ring is higher than the process gas output channel of the gas distribution chamber in the adjacent inner ring. The air inlet device according to claim 1, wherein a first end gas path of the process gas output channel is connected to the corresponding process gas input pipeline; a second end gas path of the process gas output channel Connected to the inside of the reaction chamber; from the first end of the process gas output channel to the second end of the process gas output channel, the cross-sectional area of the process gas output channel gradually increases. The gas inlet device according to claim 3, wherein the number of the process gas output channels corresponding to each of the gas distribution chambers is the same or different. The air inlet device according to claim 4, wherein a first end of the process gas input pipeline is connected to the corresponding process gas source; a second end of the process gas input pipeline is located at the corresponding process gas source. In the air inlet device, and connected to the buffer chamber through a gas path corresponding to the process gas injection port above the buffer chamber; the process gas injection port and the air equalization hole corresponding to the same buffer chamber are on the horizontal plane The projections do not overlap. The air inlet device according to claim 9, wherein the air inlet device includes a lower section; the lower section includes a mounting plate; a plurality of the process gas injection ports are formed in the mounting plate and communicate with each other. The top and bottom surfaces of the mounting plate. The air intake device according to claim 10, wherein the lower section further includes a first lower section member and a second lower section member; the top and bottom surfaces of the first lower section member are respectively welded to the installation The bottom surface of the plate and the top surface of the second component of the lower section; the plurality of buffer cavities are formed on the upper surface of the first component of the lower section, and the top of the buffer cavities are blocked by the bottom surface of the mounting plate ; The plurality of gas distribution chambers are formed on the top surface of the second member of the lower section, and pass through the lower section The bottom surface of the first component of the segment blocks the top of the gas distribution chamber; the air equalization hole is formed on the lower surface of the first component of the lower segment and communicates with the corresponding buffer chamber and the gas distribution chamber. The air intake device according to claim 11, wherein the first component of the lower section and the second component of the lower section are made of pure nickel. The air inlet device according to claim 10, wherein the air inlet device further includes an upper section; the bottom surface of the upper section is welded to the top surface of the mounting plate; the top surface of the upper section extends outward to form an annular Support seat; the outer side wall of the upper section is provided with an annular groove concentric with it. The air inlet device according to claim 13, wherein a clean gas input pipeline connected to the annular groove is also provided in the upper section for inputting clean gas into the reaction chamber. The air intake device according to claim 13, wherein the cooling fluid passage includes a first cooling chamber and a second cooling chamber connected to an external cooling fluid source; the first cooling chamber is disposed on the upper section Inside; the second cooling chamber is arranged inside the lower section, and the buffer chamber and the gas distribution chamber are arranged around the outer periphery of the second cooling chamber; through the first cooling chamber, the third cooling chamber The two cooling chambers conduct away the heat of the upper section and the lower section. The air intake device according to claim 15, wherein the cooling fluid channel further includes a third cooling chamber disposed inside the lower section; the third cooling chamber is connected to an external cooling fluid source and is located in the third cooling chamber. Below the two cooling chambers, the buffer chamber, the gas distribution chamber and the process gas output channel. The air intake device according to claim 1, wherein a purge gas input pipeline is further provided in the air intake device, which extends vertically downward from the center of the top surface of the air intake device to the center of the air intake device. Bottom center. The air inlet device according to claim 4, wherein the air inlet device includes five gas distribution chambers arranged sequentially from outside to inside, namely a first gas distribution chamber, a second gas distribution chamber, and a third gas distribution chamber. Distribution chamber, fourth gas distribution chamber and fifth gas distribution chamber; the first gas distribution chamber, the The process gas in the second gas distribution chamber and the fourth gas distribution chamber is hydride; the process gas in the third gas distribution chamber and the fifth gas distribution chamber is an organic metal process gas. A substrate processing equipment, including a reaction chamber, the reaction chamber including a chamber top cover, and an installation hole dug in the center of the chamber top cover, the substrate processing equipment including: any one of claims 1 to 18 The air inlet device described in one item; the air inlet device penetrates the mounting hole and is fixedly installed on the top cover of the chamber; a tray is provided in the reaction chamber and located below the air inlet device , used to carry the substrate to be processed; a first through hole is formed in the center area of the tray opposite to the air inlet device to reduce the heat radiated by the tray to the air inlet device. The substrate processing equipment according to claim 19, wherein there is a gap between the outer wall of the air inlet device and the inner wall of the mounting hole; the air inlet device further includes an upper section, and the upper section An annular groove is provided on the outer wall; the annular groove is connected to an external source of clean gas, and the clean gas in the annular groove enters the reaction chamber through the gap. The substrate processing equipment according to claim 19, wherein the inner wall of the first through hole is provided with an annular protrusion concentric with the first through hole; in the first through hole, the protrusion is An upper pressure plate and a lower pressure plate are respectively provided above and below the outlet; the upper pressure plate and the lower pressure plate clamp the protruding portion to achieve integrated fixed connection of the upper pressure plate, the lower pressure plate and the lower pressure plate. pallet.