TWI826076B - Display device - Google Patents

Abstract

A display device includes a pixel circuit substrate and a light emitting component. The pixel circuit substrate includes a substrate, a metal layer and a light shielding structure. The light shielding structure is formed on the metal layer. A stack of the light shielding structure and the metal layer has a reflectivity of 3%-30% for visible light. The light emitting component is electrically connected to the pixel circuit substrate. The light shielding structure is partially overlapping with the light emitting component in the normal direction of the top surface of the substrate.

Description

display device

The present invention relates to a display device.

With the development of technology, various types of display devices have appeared on the market. In order to enable transparent structures such as building windows and car windows to display images, many manufacturers are currently committed to developing transparent display devices. Generally speaking, a transparent display device includes a transmissive area and a non-transmissive area, where the transmissive area contains many light-emitting elements, and these light-emitting elements can be used to display images.

The present invention provides a display device that can improve the light leakage problem caused by the light emitted by the light-emitting element being reflected by the pixel circuit.

At least one embodiment of the present invention provides a display device. The display device includes a pixel circuit substrate and a light-emitting element. The pixel circuit substrate includes a substrate, a metal layer and a light-shielding structure. The light-shielding structure is formed on the metal layer. The stacking of the light-shielding structure and the metal layer has a reflectivity of 3% to 30% for visible light. The light-emitting element is electrically connected to the pixel circuit substrate. The light-shielding structure partially overlaps the light-emitting structure in the normal direction of the top surface of the substrate. element.

Based on the above, since the stacking of the light-shielding structure and the metal layer has a reflectivity of 3% to 30% for visible light, the probability of light emitted by the light-emitting element being repeatedly reflected by the pixel circuit can be reduced, thereby improving the light leakage problem of the display device.

1,2,3,4,5: display device

10: Pixel circuit substrate

20:Light-emitting components

20a: blue light emitting element

20b: Green light-emitting component

20c: red light-emitting component

100:Substrate

102:Buffer layer

110: Gate insulation layer

120: Interlayer dielectric layer

130: First insulation layer

132: First barrier layer

140: Second insulation layer

142: Second barrier layer

144:Third barrier layer

144H, 152H, 154H, 400H, 410H: through hole

150:Retaining wall layer

150H:Open

150s: Sidewall

150t:Top surface

152: The fourth barrier layer

154:Protective layer

202:First electrode

204: Second electrode

400:Metal layer

410:Light-shielding structure

410H1: First opening

410H2: Second opening

A-A’: line

CL: Common signal line

G: Gate

M0: auxiliary conductive layer

M1: first conductive layer

M2: Second conductive layer

M3: The third conductive layer

M4: The fourth conductive layer

ND: normal direction

P1: first pad

P2: Second pad

S1: first connecting material

S2: Second connecting material

SM: semiconductor pattern

SD1: first source/drain

SD2: Second source/drain

SL1: first signal line

SL2: Second signal line

SL3: The third signal line

T1: first transfer structure

T2: Second transfer structure

FIG. 1A is a schematic top view of a display device according to an embodiment of the present invention.

Fig. 1B is a schematic cross-sectional view along line A-A' of Fig. 1A.

FIG. 2 is a schematic cross-sectional view of a display device according to an embodiment of the present invention.

FIG. 3 is a schematic cross-sectional view of a display device according to an embodiment of the present invention.

FIG. 4 is a schematic cross-sectional view of a display device according to an embodiment of the present invention.

FIG. 5 is a schematic cross-sectional view of a display device according to an embodiment of the present invention.

FIG. 6 is a graph showing the relationship between reflectivity and light wavelength of a stack of a metal layer and a light-shielding structure according to an embodiment of the present invention.

FIG. 1A is a schematic top view of a display device 1 according to an embodiment of the present invention. Fig. 1B is a schematic cross-sectional view along line A-A' of Fig. 1A. The display device 1 includes a transmissive region TR and a non-transmissive region NTR located around the transmissive region TR, wherein a circuit is provided in the non-transmissive region NTR, and the transmissive region TR can transmit light. In other words, the display device 1 is a transparent display device. For convenience of explanation, FIG. 1A omits part of the circuit in the non-penetrating region NTR. The line layout in the non-penetrating zone NTR can be adjusted according to actual needs.

Please refer to FIG. 1A and FIG. 1B . The display device 1 includes a pixel circuit substrate 10 and a light-emitting element 20 .

The pixel circuit substrate 10 includes a substrate 100, a metal layer 400 and a light-shielding structure 410. In this embodiment, the pixel circuit substrate 10 further includes an auxiliary conductive layer M0, a buffer layer 102, a semiconductor pattern SM, a gate insulating layer 110, a first conductive layer M1, an interlayer dielectric layer 120, a second conductive layer M2, The first insulating layer 130, the first barrier layer 132, the third conductive layer M3, the second insulating layer 140, the second barrier layer 142, the fourth conductive layer M4, the third barrier layer 144, the barrier layer 150, The fourth barrier layer 152 and the protective layer 154.

The material of the substrate 100 may be glass, quartz, organic polymer, opaque/reflective material (such as conductive material, metal, wafer, ceramic or other applicable materials) or other applicable materials. If conductive materials or metals are used, an insulating layer (not shown) is covered on the substrate 100 to avoid short circuit problems.

The auxiliary conductive layer M0 is located on the substrate 100 . In this embodiment, the auxiliary conductive layer M0 is directly formed on the substrate 100, but the invention is not limited thereto. In other cases In the embodiment, other insulating layers (not shown) are sandwiched between the auxiliary conductive layer M0 and the substrate 100 . In some embodiments, the material of the auxiliary conductive layer M0 includes metal or other suitable light-shielding materials.

The buffer layer 102 is located on the auxiliary conductive layer M0 and the substrate 100 . In some embodiments, the material of the buffer layer 102 includes silicon oxide, silicon nitride, silicon oxynitride, organic insulating materials or other suitable insulating materials.

The semiconductor pattern SM is located on the buffer layer 102 . In this embodiment, the semiconductor pattern SM partially overlaps the auxiliary conductive layer M0 in the normal direction ND of the top surface of the substrate 100 . In some embodiments, the semiconductor pattern SM is a single-layer or multi-layer structure, which includes amorphous silicon, polycrystalline silicon, microcrystalline silicon, single crystal silicon, organic semiconductor materials, oxide semiconductor materials (for example: indium zinc oxide, indium gallium Zinc oxide or other suitable materials or combinations of the above materials) or other suitable materials or combinations of the above materials.

The gate insulating layer 110 is located on the semiconductor pattern SM and the buffer layer 102 . In some embodiments, the material of the gate insulating layer 110 includes silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, hafnium oxide, organic insulating materials or other suitable insulating materials.

The first conductive layer M1 is located on the gate insulating layer 110 . The first conductive layer M1 includes a gate G and a first signal line SL1. In some embodiments, the first conductive layer M1 also includes other conductive structures. The semiconductor pattern SM overlaps the gate G in the normal direction ND. In some embodiments, the first conductive layer M1 is a single-layer or multi-layer structure and includes chromium, gold, silver, copper, tin, lead, hafnium, tungsten, molybdenum, neodymium, titanium, tantalum, aluminum, Zinc and other metals, alloys or combinations of the above materials or other conductive materials.

The interlayer dielectric layer 120 is located on the first conductive layer M1 and the gate insulating layer 110 . In some embodiments, the material of the interlayer dielectric layer 120 includes silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, hafnium oxide, organic insulating materials or other suitable insulating materials.

The second conductive layer M2 is located on the interlayer dielectric layer 120 . The second conductive layer M2 includes a first source/drain SD1, a second source/drain SD2 and a second signal line SL2. In some embodiments, the second conductive layer M2 also includes other conductive structures. The first source/drain SD1 and the second source/drain SD2 are electrically connected to the semiconductor pattern SM through the through holes in the interlayer dielectric layer 120 and the gate insulating layer 110 . In some embodiments, the second conductive layer M2 is a single-layer or multi-layer structure, and includes metals such as chromium, gold, silver, copper, tin, lead, hafnium, tungsten, molybdenum, neodymium, titanium, tantalum, aluminum, zinc, etc. Alloys or combinations of the above materials or other conductive materials.

The first insulating layer 130 is located on the second conductive layer M2 and the interlayer dielectric layer 120 . In some embodiments, the material of the first insulating layer 130 includes silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, hafnium oxide, organic insulating materials or other suitable insulating materials.

The first barrier layer 132 is located on the first insulation layer 130 . In some embodiments, the first insulating layer 130 includes a through hole that overlaps a portion of the second conductive layer M2 (eg, the first source/drain electrode SD1 ), and the first barrier layer 132 is filled in the through hole. In some embodiments, the first barrier layer 132 has a through hole, and the through hole of the first barrier layer 132 overlaps the through hole of the first insulating layer 130 , so that the first barrier layer 132 has a through hole. Other conductive structures may be electrically connected to the second conductive layer M2 through the through holes of the first barrier layer 132 . In some embodiments, the material of the first barrier layer 132 includes silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, hafnium oxide, organic insulating materials or other suitable insulating materials.

The third conductive layer M3 is located on the first insulating layer 130 . In this embodiment, the third conductive layer M3 is located on the first barrier layer 132 . In this embodiment, the third conductive layer M3 includes a first transfer structure T1, a second transfer structure T2 and a third signal line SL3. In some embodiments, the third conductive layer M3 also includes other conductive structures. At least part of the third conductive layer M3 is electrically connected to the second conductive layer M2. For example, the first transfer structure T1 is electrically connected to the first source/drain SD1 through the through hole of the first barrier layer 132 . In some embodiments, the third conductive layer M3 is a single-layer or multi-layer structure, and includes metals such as chromium, gold, silver, copper, tin, lead, hafnium, tungsten, molybdenum, neodymium, titanium, tantalum, aluminum, zinc, etc. Alloys or combinations of the above materials or other conductive materials.

The second insulating layer 140 is located on the third conductive layer M3 and the first insulating layer 130 . In this embodiment, the second insulating layer 140 is located on the third conductive layer M3 and the first barrier layer 132 . In some embodiments, the material of the second insulating layer 140 includes silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, hafnium oxide, organic insulating materials or other suitable insulating materials.

The second barrier layer 142 is located on the second insulation layer 140 . In some embodiments, the second insulating layer 140 includes a through hole that overlaps part of the third conductive layer M3 (such as the first transfer structure T1 and the second transfer structure T2), and the second barrier layer 142 fills the aforementioned in the through hole. In some embodiments, the second barrier layer 142 has a via, and The through holes of the second barrier layer 142 overlap with the through holes of the second insulating layer 140, so that other conductive structures located on the second barrier layer 142 can be electrically connected to the through holes of the second barrier layer 142. The third conductive layer M3. In some embodiments, the material of the second barrier layer 142 includes silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, hafnium oxide, organic insulating materials or other suitable insulating materials.

The fourth conductive layer M4 is located on the second insulating layer 140 . In this embodiment, the fourth conductive layer M4 is located on the second barrier layer 142 . In this embodiment, the fourth conductive layer M4 includes a first pad P1, a second pad P2 and a common signal line CL. In some embodiments, the fourth conductive layer M4 also includes other conductive structures. At least part of the fourth conductive layer M4 is electrically connected to the third conductive layer M3. For example, the first pad P1 and the second pad P2 are electrically connected to the first transfer structure T1 and the second transfer structure T2 through the through holes of the second barrier layer 142 respectively. In some embodiments, the fourth conductive layer M4 is a single-layer or multi-layer structure, and includes metals such as chromium, gold, silver, copper, tin, lead, hafnium, tungsten, molybdenum, neodymium, titanium, tantalum, aluminum, zinc, etc. Alloys or combinations of the above materials or other conductive materials.

The third barrier layer 144 is located on the fourth conductive layer M4 and the second barrier layer 142 . The third barrier layer 144 has one or more through holes 144H overlapping the first pad P1 and the second pad P2. In this embodiment, a through hole 144H overlaps the first pad P1 and the second pad P2 at the same time, but the invention is not limited to this. In other embodiments, the plurality of through holes 144H overlap the first pad P1 and the second pad P2 respectively. In some embodiments, the material of the third barrier layer 144 includes silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, hafnium oxide, organic insulating materials or other suitable insulating materials. edge material. In some embodiments, the second pads P2 corresponding to the plurality of light-emitting elements 20 are electrically connected to each other. For example, the fourth conductive layer M4 includes a common signal line CL that connects the plurality of second pads P2 together.

The retaining wall layer 150 is located on the substrate 100 . In this embodiment, the barrier layer 150 is located on the third barrier layer 144 . The barrier layer 150 has an opening 150H, and the opening 150H is suitable for accommodating the light emitting element 20 . The opening 150H overlaps the first pad P1 and the second pad P2. In some embodiments, the material of the barrier layer 150 includes silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, hafnium oxide, organic insulating materials or other suitable insulating materials. In some embodiments, the barrier layer 150 has a thickness of 0.5 microns to 6 microns.

The fourth barrier layer 152 is located on the retaining wall layer 150 . In some embodiments, the fourth barrier layer 152 extends from the top surface 150t of the barrier layer 150 along the sidewalls 150s of the opening 150H to the bottom of the opening 150H. In some embodiments, the fourth barrier layer 152 at the bottom of the opening 150H contacts the third barrier layer 144 . The fourth barrier layer 152 has one or more through holes 152H overlapping the first pad P1 and the second pad P2. In this embodiment, a through hole 152H overlaps the first pad P1 and the second pad P2 at the same time, but the invention is not limited to this. In other embodiments, the plurality of through holes 152H overlap the first pad P1 and the second pad P2 respectively. In some embodiments, the through hole 144H and the through hole 152H are formed through the same photolithography process and etching process. Therefore, the side walls of the through hole 144H are aligned with the side walls of the through hole 152H, but the invention is not limited thereto. In some embodiments, the material of the fourth barrier layer 152 includes silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, hafnium oxide, organic insulating material or Other suitable insulating materials.

The light-emitting element 20 is electrically connected to the pixel circuit substrate 100 . The first electrode 202 and the second electrode 204 of the light-emitting element 20 are electrically connected to the first pad P1 and the second pad P2 of the pixel circuit substrate 100 respectively. For example, the first connecting material S1 connects the first electrode 202 and the first pad P1, and the second connecting material S2 connects the second electrode 204 and the second pad P2. In some embodiments, the materials of the first connecting material S1 and the second connecting material S2 include conductive glue, solder or other conductive joining materials. The light-emitting element 20 is, for example, any form of micro-light-emitting diode. One of the first electrode 202 and the second electrode 204 is the cathode of the light-emitting element 20 , and the other one is the anode of the light-emitting element 20 . In this embodiment, the display device 1 includes light-emitting elements 20 of different colors, such as blue light-emitting elements 20a, green light-emitting elements 20b, and red light-emitting elements 20c, thereby displaying color images.

In this embodiment, the metal layer 400 is located on the barrier layer 150 . The metal layer 400 is formed on the fourth barrier layer 152 . The fourth barrier layer 152 is located between the metal layer 400 and the barrier layer 150, thereby preventing the barrier layer 150 from being damaged by the process of forming the metal layer 400. In some embodiments, the metal layer 400 extends from above the top surface 150t of the barrier layer 150 to below the light emitting element 20 along the sidewalls 150s of the opening 150H. The metal layer 400 is located between the sidewall 150s of the opening 150H and the light emitting element 20 . In some embodiments, the metal layer 400 also extends to above the fourth conductive layer M4 at the bottom of the opening 150H, and the third barrier layer 144 and the fourth barrier layer 152 are sandwiched between the metal layer 400 and the fourth conductive layer M4 . In some embodiments, the metal layer 400 has a through hole 400H, and the first electrode 202 and the second electrode 204 of the light-emitting element 20 correspond to the aforementioned Through hole 400H is provided.

In some embodiments, the metal layer 400 is a single-layer or multi-layer structure and includes chromium, gold, silver, copper, tin, lead, hafnium, tungsten, molybdenum, neodymium, titanium, tantalum, aluminum, zinc and other metals, alloys or Combinations of the above materials or other metallic materials. In some embodiments, metal layer 400 has a thickness of 250 Angstroms to 8000 Angstroms.

The light-shielding structure 410 is formed on the metal layer 400 . The light-shielding structure 410 extends from above the top surface 150t of the barrier layer 150 to below the light-emitting element 20 along the side walls 150s of the opening 150H. The light-shielding structure 410 is located between the sidewall 150s of the opening 150H and the light-emitting element 20 . In this embodiment, the metal layer 400 and the light-shielding structure 410 partially overlap the light-emitting element 20 in the normal direction ND of the top surface of the substrate 100 . In some embodiments, the light shielding structure 410 also extends to above the fourth conductive layer M4 at the bottom of the opening 150H. In some embodiments, the light-shielding structure 410 has a through hole 410H, and the first electrode 202 and the second electrode 204 of the light-emitting element 20 are arranged corresponding to the aforementioned through hole 410H. In some embodiments, the shape of the metal layer 400 and the shape of the light-shielding structure 410 are defined by the same etching process. Therefore, the pattern of the metal layer 400 vertically projected on the substrate 100 is equal to the pattern of the light-shielding structure 410 vertically projected on the substrate 100 pattern on. For example, the method of forming the metal layer 400 and the light-shielding structure 410 includes: depositing metal materials on the fourth barrier layer 152 through physical vapor deposition, chemical vapor deposition, electroplating, sputtering, electroless plating or other processes; Then, a light-shielding material is deposited on the entire top surface of the metal material by physical vapor deposition, chemical vapor deposition, atomic layer deposition or other suitable methods; finally, a photolithography process and an etching process are performed to pattern the aforementioned light-shielding material and Metal materials, thereby obtaining stacked shields Optical structure 410 and metal layer 400.

In other embodiments, the light-shielding structure 410 and the metal layer 400 are defined by different etching processes. Therefore, the pattern vertically projected by the metal layer 400 on the substrate 100 may not be equal to the pattern vertically projected by the light-shielding structure 410 on the substrate 100 . .

In some embodiments, the material of the light-shielding structure 410 includes molybdenum oxide or an oxide containing molybdenum element and other metal elements or other metal oxides that can absorb visible light, such as niobium tantalum silicon carbon oxide, etc. In some embodiments, the optical density (OD) of the stack of the light-shielding structure 410 and the metal layer 400 is greater than 2. In this embodiment, the reflectivity of the stack of the light-shielding structure 410 and the metal layer 400 for visible light is 3% to 30%. In some embodiments, the light shielding structure 410 has a thickness of 250 angstroms to 2000 angstroms.

In this embodiment, the metal layer 400 and the light-shielding structure 410 surround the light-emitting element 20, but the invention is not limited thereto. In other embodiments, the metal layer 400 and the light-shielding structure 410 are only provided on the side of the opening 150H close to the penetration region TR. In some embodiments, the auxiliary conductive layer M0, the semiconductor pattern SM, the first conductive layer M1, the second conductive layer M2, the third conductive layer M3, the fourth conductive layer M4, the metal layer 400, the light-shielding structure 410 and the light-emitting element 20 It is arranged in the non-penetrating area NTR, and the penetrating area TR is made of transparent materials.

The protective layer 154 is located on the light-shielding structure 410 and the fourth barrier layer 152 and covers the light-shielding structure 410 . In some embodiments, the material of the protective layer 154 includes silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, hafnium oxide, organic insulating materials or other suitable insulating materials. The through hole 154H of the protective layer 154 overlaps the light emitting element 20 .

Based on the above, the stack of the light-shielding structure 410 and the metal layer 400 has a reflectivity of only 3% to 30% for visible light. Therefore, the light emitted by the light-emitting element 20 can be prevented from being repeated between the conductive layers in the pixel circuit substrate 10 Light leakage problem caused by reflection. In addition, since the stacking of the light-shielding structure 410 and the metal layer 400 can still reflect a small amount of light, the stacking of the light-shielding structure 410 and the metal layer 400 has the effect of increasing the light extraction efficiency of the display device 1 .

Figure 2 is a schematic cross-sectional view of a display device 2 according to an embodiment of the present invention. It must be noted here that the embodiment of FIG. 2 follows the component numbers and part of the content of the embodiment of FIG. 1A and FIG. 1B , where the same or similar numbers are used to represent the same or similar elements, and references with the same technical content are omitted. instruction. For descriptions of omitted parts, reference may be made to the foregoing embodiments and will not be described again here.

The difference between the display device 2 of FIG. 2 and the display device 1 of FIG. 1 includes that the metal layer 400 of the display device 2 is electrically connected to the light-emitting element 20 to the third conductive layer M3.

Referring to FIG. 2 , the metal layer 400 is located on the second insulating layer 140 . In this embodiment, the metal layer 400 is located on the second barrier layer 142 . In this embodiment, the metal layer 400 includes a first pad P1, a second pad P2 and a common signal line CL. In some embodiments, metal layer 400 also includes other conductive structures. At least part of the metal layer 400 is electrically connected to the third conductive layer M3. For example, the first pad P1 and the second pad P2 are electrically connected to the first transfer structure T1 and the second transfer structure T2 through the through holes of the second barrier layer 142 respectively.

The light-shielding structure 410 is formed on the metal layer 400 . In some embodiments, the patterning process of the metal layer 400 is performed first, and then the light-shielding structure 410 is formed on the metal layer 400 . On layer 400. In some embodiments, the method of forming the light-shielding structure 410 includes: depositing a light-shielding material on the metal layer 400 through physical vapor deposition, chemical vapor deposition, atomic layer deposition or other suitable methods; and then, through a lithography process and The etching process patterns the aforementioned light-shielding material to form a light-shielding structure 410 that exposes a portion of the metal layer 400 , thereby allowing the subsequently implanted light-emitting element 20 to be electrically connected to the portion of the metal layer 400 exposed by the light-shielding structure 410 .

In this embodiment, the light-shielding structure 410 has a first opening 410H1 and a second opening 410H2, where the first opening 410H1 overlaps the first electrode 202, the first connecting material S1 and the first pad P1, and the second opening 410H1 overlaps the first electrode 202, the first connecting material S1 and the first pad P1. The opening 410H2 overlaps the second electrode 204, the second connecting material S2 and the second pad P2, but the invention is not limited thereto. In other embodiments, an opening of the light-shielding structure 410 overlaps the first electrode 202 and the second electrode 204 at the same time. In some embodiments, the width of each of the first opening 410H1 and the second opening 410H2 is greater than 4 microns, thereby improving the process yield of the light-emitting element 20 being bonded to the first pad P1 and the second pad P2.

In some embodiments, the partial light-shielding structure 410 is directly formed on the upper surface of the second barrier layer 142 . In other words, the partial light-shielding structure 410 does not overlap the metal layer 400 in the normal direction ND. For example, the partial light-shielding structure 410 between the first pad P1 and the second pad P2 does not overlap the metal layer 400 in the normal direction ND. In some embodiments, the light shielding structure 410 covers the sidewalls of the metal layer 400 . For example, the light-shielding structure 410 covers the sidewalls of the first pad P1, the sidewalls of the second pad P2, and the sidewalls of the common signal line CL.

In this embodiment, the stacking of the light-shielding structure 410 and the metal layer 400 is The reflectivity of visible light is only 3% to 30%. Therefore, the light leakage problem caused by the light emitted by the light-emitting element 20 being repeatedly reflected between the conductive layers in the pixel circuit substrate 10 can be avoided.

In this embodiment, the stack of the partial light-shielding structure 410 and the metal layer 400 extends below the side walls 150s of the opening 150H, thereby reducing the probability of light passing through the side walls 150s of the opening 150H being reflected repeatedly in the pixel circuit substrate 10.

Figure 3 is a schematic cross-sectional view of a display device 3 according to an embodiment of the present invention. It must be noted here that the embodiment of FIG. 3 follows the component numbers and part of the content of the embodiment of FIG. 2 , where the same or similar numbers are used to represent the same or similar elements, and descriptions of the same technical content are omitted. For descriptions of omitted parts, reference may be made to the foregoing embodiments and will not be described again here.

The difference between the display device 3 in FIG. 3 and the display device 2 in FIG. 2 includes that the display device 3 does not include the third barrier layer 144 , the barrier layer 150 , the fourth barrier layer 152 and the protective layer 154 .

Figure 4 is a schematic cross-sectional view of a display device 4 according to an embodiment of the present invention. It must be noted here that the embodiment of FIG. 4 follows the component numbers and part of the content of the embodiment of FIG. 2 , where the same or similar numbers are used to represent the same or similar elements, and descriptions of the same technical content are omitted. For descriptions of omitted parts, reference may be made to the foregoing embodiments and will not be described again here.

The difference between the display device 4 of FIG. 4 and the display device 2 of FIG. 2 includes that the metal layer 400 of the display device 4 is located between the first insulating layer 130 and the second insulating layer 140 .

Referring to FIG. 4 , the metal layer 400 is located on the first insulating layer 130 . In this embodiment, the metal layer 400 is located on the first barrier layer 132 . In this embodiment, the metal layer 400 includes a first transfer structure T1, a second transfer structure T2 and a third signal line SL3. In some embodiments, metal layer 400 also includes other conductive structures. In some embodiments, the third signal line SL3 can be used as a common signal line, and the third signal line SL3 electrically connects the plurality of second switching structures T2 to each other, but the invention is not limited thereto. In other embodiments, the plurality of second transfer structures T2 are electrically connected through other conductive layers. At least part of the metal layer 400 is electrically connected to the second conductive layer M2. For example, the first transfer structure T1 is electrically connected to the first source/drain SD1 through the through hole of the first barrier layer 132 .

The light-shielding structure 410 is formed on the metal layer 400 . In some embodiments, the light-shielding structure 410 is formed on the metal layer 400 after the patterning process of the metal layer 400 is first performed. In some embodiments, the method of forming the light-shielding structure 410 includes: depositing a light-shielding material on the metal layer 400 through physical vapor deposition, chemical vapor deposition, atomic layer deposition or other suitable methods; and then, through a lithography process and The etching process patterns the light-shielding material to form a light-shielding structure 410 that exposes a portion of the metal layer 400 , so that the subsequently formed fourth metal layer M4 can be electrically connected to the portion of the metal layer 400 exposed by the light-shielding structure 410 .

In this embodiment, the light-shielding structure 410 has a first opening 410H1 and a second opening 410H2. The first opening 410H1 overlaps the first pad P1, and the second opening 410H2 overlaps the second pad P2. The first pad P1 passes through the first opening 410H1 to electrically connect the first transfer structure T1, and the second pad P2 passes through the second opening. 410H2 is electrically connected to the second transfer structure T2. In other embodiments, an opening of the light-shielding structure 410 overlaps the first pad P1 and the second pad P2 at the same time. In some embodiments, the width of each of the first opening 410H1 and the second opening 410H2 is greater than 4 microns, thereby improving the process yield of the fourth metal layer M4 being electrically connected to the metal layer 400 .

In some embodiments, the partial light-shielding structure 410 is directly formed on the upper surface of the first barrier layer 132 . In other words, the partial light-shielding structure 410 does not overlap the metal layer 400 in the normal direction ND. For example, the partial light-shielding structure 410 between the first transfer structure T1 and the second transfer structure T2 does not overlap the metal layer 400 in the normal direction ND. In some embodiments, the light shielding structure 410 covers the sidewalls of the metal layer 400 . For example, the light-shielding structure 410 covers the sidewalls of the first transfer structure T1, the sidewalls of the second transfer structure T2, and the sidewalls of the third signal line SL3.

The second insulating layer 140 is located on the metal layer 400, the light-shielding structure 410 and the first insulating layer 130. In this embodiment, the second insulating layer 140 is located on the metal layer 400, the light-shielding structure 410 and the first barrier layer 132. The second barrier layer 142 is located on the second insulation layer 140 . In some embodiments, the second insulating layer 140 includes a through hole that overlaps part of the metal layer 400 (such as the first transfer structure T1 and the second transfer structure T2), and the second barrier layer 142 fills the aforementioned through hole. middle. In some embodiments, the second barrier layer 142 has a through hole, and the through hole of the second barrier layer 142 overlaps the through hole of the second insulating layer 140 so that the conductive structure on the second barrier layer 142 can pass through. The through hole of the second barrier layer 142 is electrically connected to the metal layer 400 .

The fourth conductive layer M4 is located on the second insulating layer 140 . In this embodiment , the fourth conductive layer M4 is located on the second barrier layer 142 . In this embodiment, the fourth conductive layer M4 includes a first pad P1, a second pad P2 and a common signal line CL. In some embodiments, the fourth conductive layer M4 also includes other conductive structures. At least part of the fourth conductive layer M4 is electrically connected to the metal layer 400 . For example, the first pad P1 and the second pad P2 are electrically connected to the first transfer structure T1 and the second transfer structure T2 through the through holes of the second barrier layer 142 respectively.

Figure 5 is a schematic cross-sectional view of a display device 5 according to an embodiment of the present invention. It must be noted here that the embodiment of FIG. 5 follows the component numbers and part of the content of the embodiment of FIG. 4 , where the same or similar numbers are used to represent the same or similar elements, and descriptions of the same technical content are omitted. For descriptions of omitted parts, reference may be made to the foregoing embodiments and will not be described again here.

The differences between the display device 5 of FIG. 5 and the display device 4 of FIG. 4 include that the display device 5 does not include the third barrier layer 144 , the barrier layer 150 , the fourth barrier layer 152 and the protective layer 154 .

FIG. 6 is a graph showing the relationship between reflectivity and light wavelength of a stack of a metal layer and a light-shielding structure according to an embodiment of the present invention. Please refer to Figure 6. Molybdenum metal (Mo) with a thickness of 50 nanometers is used as the metal layer, and molybdenum and tantalum oxide of different thicknesses are used as the light-shielding structure. The molybdenum and tantalum oxide is formed by sputtering with MoOxTa8 as the target material. Measure the relationship between the reflectivity of a stack of metal layers and light-shielding structures and the wavelength of light.

In the data where the thickness of the light-shielding structure is 55 nm, the reflectance and reflectivity of the laminated structure are measured with and without annealing (shown as a solid line in the figure) and without annealing (shown as a dotted line in the figure). The relationship between the wavelengths of light, where the aforementioned Annealing is performed at 400 degrees Celsius, for example. It can be known from Figure 6 that the reflectivity of the stack of the metal layer and the light-shielding structure is related to the thickness of the light-shielding structure. In addition, after the laminated structure is annealed, the impact of the thickness of the light-shielding structure on the reflectance will become more obvious, because the light-shielding structure will crystallize after annealing. When the thickness of the light-shielding structure is 75 nanometers to 85 nanometers, the light reflected by the stack of the metal layer and the light-shielding structure is darker blue, so the thickness of the light-shielding structure is preferably 75 nanometers to 85 nanometers.

1:Display device

10: Pixel circuit substrate

20:Light-emitting components

100:Substrate

102:Buffer layer

110: Gate insulation layer

120: Interlayer dielectric layer

130: First insulation layer

132: First barrier layer

140: Second insulation layer

142: Second barrier layer

144:Third barrier layer

144H, 152H, 154H, 400H, 410H: through hole

150:Retaining wall layer

150H:Open

150s: Sidewall

150t:Top surface

152: The fourth barrier layer

154:Protective layer

202:First electrode

204: Second electrode

400:Metal layer

410:Light-shielding structure

A-A’: line

CL: Common signal line

G: gate

M0: auxiliary conductive layer

M1: first conductive layer

M2: Second conductive layer

M3: The third conductive layer

M4: The fourth conductive layer

ND: normal direction

P1: first pad

P2: Second pad

S1: first connecting material

S2: Second connecting material

SM: semiconductor pattern

SD1: first source/drain

SD2: Second source/drain

SL1: first signal line

SL2: Second signal line

SL3: The third signal line

T1: first transfer structure

T2: Second transfer structure

Claims (10)

A display device, including: a pixel circuit substrate, including: a substrate; a metal layer; and a light-shielding structure formed on the metal layer, wherein the stack of the light-shielding structure and the metal layer has a reflectivity of 3 for visible light %~30%; and a light-emitting element electrically connected to the pixel circuit substrate, and wherein the light-shielding structure partially overlaps the light-emitting element in the normal direction of the top surface of the substrate. The display device of claim 1, wherein the pixel circuit substrate further includes: a barrier layer located on the substrate and having an opening, wherein the light-shielding structure is located between a side wall of the opening and the light-emitting element . The display device of claim 2, wherein the light-shielding structure extends from above the top surface of the barrier layer to below the light-emitting element. The display device of claim 1, wherein a first electrode and a second electrode of the light-emitting element are electrically connected to the pixel circuit substrate respectively, and the first electrode corresponds to a first opening of the light-shielding structure. hole and set. The display device of claim 1, wherein the pixel circuit substrate further includes: a first conductive layer including a gate; a semiconductor pattern overlapping the gate; a second conductive layer, including a first source/drain and a second source/drain electrically connected to the semiconductor pattern; a first insulating layer located on the second conductive layer; a first Three conductive layers are located on the first insulating layer, and at least part of the third conductive layer is electrically connected to the second conductive layer; a second insulating layer is located on the third conductive layer, wherein the metal layer Located on the second insulating layer, and at least part of the metal layer is electrically connected to the third conductive layer, wherein the metal layer includes a first pad and a second pad, and the light-emitting element is electrically connected to the first pad and the second pad. The display device of claim 5, wherein a first electrode and a second electrode of the light-emitting element are electrically connected to the first pad and the second pad respectively, and the light-shielding structure has a structure overlapping the first A first opening of an electrode. The display device of claim 6, further comprising: a first connecting material connecting the first electrode and the first pad, and the first connecting material overlaps the first opening. The display device of claim 1, wherein the pixel circuit substrate includes: a first conductive layer including a gate; a semiconductor pattern overlapping the gate; and a second conductive layer including a gate electrically connected to A first source/drain and a second source/drain of the semiconductor pattern; a first insulating layer located on the second conductive layer, wherein the metal layer is located On the first insulating layer, and at least part of the metal layer is electrically connected to the second conductive layer; a second insulating layer on the metal layer and the light-shielding structure; and a third conductive layer on the On the second insulating layer, and at least part of the third conductive layer is electrically connected to the metal layer, wherein the third conductive layer includes a first pad and a second pad, and the light-emitting element is electrically connected to the first pad and the second pad. The display device of claim 1, wherein the display device includes a transmissive area and a non-transmissive area located around the transmissive area, wherein the metal layer, the light-emitting element and the light-shielding structure are disposed in the non-transmissive area. District. The display device according to claim 1, wherein the material of the light-shielding structure includes metal oxide.

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