TWI824672B - Packaging structure and its metal components - Google Patents

Packaging structure and its metal components Download PDF

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Publication number
TWI824672B
TWI824672B TW111131525A TW111131525A TWI824672B TW I824672 B TWI824672 B TW I824672B TW 111131525 A TW111131525 A TW 111131525A TW 111131525 A TW111131525 A TW 111131525A TW I824672 B TWI824672 B TW I824672B
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Taiwan
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metal component
groove
opening
metal
polymer resin
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TW111131525A
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Chinese (zh)
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TW202410339A (en
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方雅貞
林佩穎
張家誠
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順德工業股份有限公司
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Priority to TW111131525A priority Critical patent/TWI824672B/en
Priority to CN202310590738.7A priority patent/CN117613024A/en
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Publication of TW202410339A publication Critical patent/TW202410339A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49541Geometry of the lead-frame
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laminated Bodies (AREA)
  • Wrappers (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

本發明提供一種封裝結構及其金屬構件,其中該金屬構件係包括有複數個凹溝,各該凹溝呈直線狀且具有一V字形的剖面,使各該凹溝具有相對的兩內側面,各該凹溝的至少一該內側面上凸設有至少一錨固結構,該至少一錨固結構於所在的該凹溝內形成一頸縮部,各該凹溝具有一開口,且該開口的寬度W1與該頸縮部的寬度W2符合40%≦W2/W1<1,藉此,封裝製程中一高分子聚合物樹脂能填滿各該凹溝並包覆所述錨固結構,藉以提升該金屬構件與該高分子聚合物樹脂之間的結合力,而形成所述的封裝結構。The present invention provides a packaging structure and its metal component, wherein the metal component includes a plurality of grooves, each groove is linear and has a V-shaped cross-section, so that each groove has two opposite inner sides. At least one anchoring structure is protruding from at least one inner surface of each groove. The at least one anchoring structure forms a necked portion in the groove. Each groove has an opening, and the width of the opening is W1 and the width W2 of the necked portion comply with 40%≦W2/W1<1, whereby a high molecular polymer resin can fill each groove and cover the anchoring structure during the packaging process, thereby lifting the metal The bonding force between the component and the polymer resin forms the packaging structure.

Description

封裝結構及其金屬構件Packaging structure and its metal components

本發明涉及一種半導體裝置的部件,尤指一種封裝結構及其金屬構件。 The present invention relates to a component of a semiconductor device, in particular to a packaging structure and its metal components.

現有封裝結構具有一導線架、一半導體元件以及一高分子聚合物封膠體,其中該半導體元件係結合於該導線架上,該高分子聚合物封膠體包覆該導線架及該半導體元件,藉以完成該半導體元件的封裝,使該半導體元件透過該導線架與外部的電子元件電連接。然而,該高分子聚合物封膠體與該導線架之間的結合強度不足,使現有封裝結構的高分子聚合物封膠體與該導線架容易因環境的溫、溼度影響而相互脫離。 The existing packaging structure has a lead frame, a semiconductor component and a polymer sealant, wherein the semiconductor component is combined on the lead frame, and the polymer sealant covers the lead frame and the semiconductor component, thereby After completing the packaging of the semiconductor element, the semiconductor element is electrically connected to external electronic components through the lead frame. However, the bonding strength between the polymer sealant and the lead frame is insufficient, so that the polymer sealant and the lead frame of the existing packaging structure are easily separated from each other due to the influence of environmental temperature and humidity.

有鑑於此,請參閱如圖16所示,中國第106471617號發明專利提供一種現有封裝結構,該封裝結構90包括有一導線架91、一半導體元件92、一金屬夾片93及一高分子聚合物封膠體94,其中該導線架91上設有複數個鱗狀部911;該半導體元件92係透過焊料、銀等接合構件安裝在該導線架91上;該金屬夾片93透過接合構件連接該半導體元件92與該導線架91,藉以透過該導線架91將該半導體元件92與外部端子連接;該高分子聚合物封膠體94對該導線架91進行密封,包覆該導線架91、該半導體元件92以及該金屬夾片93,藉以完成對該半導體元件92的封裝。 In view of this, please refer to Figure 16. China's invention patent No. 106471617 provides an existing packaging structure. The packaging structure 90 includes a lead frame 91, a semiconductor component 92, a metal clip 93 and a polymer. Sealing compound 94, in which the lead frame 91 is provided with a plurality of scaly portions 911; the semiconductor element 92 is installed on the lead frame 91 through solder, silver and other joining members; the metal clip 93 connects the semiconductor through joining members The component 92 and the lead frame 91 are used to connect the semiconductor component 92 to external terminals through the lead frame 91; the polymer sealant 94 seals the lead frame 91 and covers the lead frame 91 and the semiconductor component. 92 and the metal clip 93, thereby completing the packaging of the semiconductor element 92.

進一步,所述鱗狀部911係以連續性點狀雷射對該導線架91的表面加工,使該導線架91表面變形而形成鱗片狀之立體結構,透過所述鱗狀部911,可以提高該高分子聚合物封膠體94與該導線架91之間的結合力。 Furthermore, the scaly portion 911 is processed by a continuous point-shaped laser on the surface of the lead frame 91 to deform the surface of the lead frame 91 to form a scaly three-dimensional structure. Through the scaly portion 911, the surface of the lead frame 91 can be improved. The bonding force between the high molecular polymer sealant 94 and the lead frame 91 .

然而,在中國第106471617號發明專利中,所述鱗狀部911內側 呈現的光滑表面並不能有更好結合性;又,為了形成所述鱗狀部911,雷射係以左、右方向來回照射,容易讓經雷射照射後之金屬顆粒無法在雷射期間被完全移除,導致所述鱗狀部911與該高分子聚合物封膠體94之間的結合性不能如預期地增加。因此,現有封裝結構90仍具有高分子聚合物樹脂與金屬構件之間結合力不足,導致該高分子聚合物封膠體94與該導線架91容易脫離,並導致現有封裝結構90存在抗敏濕性差的問題,確有其需加以改進之處。 However, in Chinese invention patent No. 106471617, the inner side of the squamous portion 911 The smooth surface presented does not have better bonding properties; in addition, in order to form the scaly portion 911, the laser is irradiated back and forth in the left and right directions, which easily prevents the metal particles after being irradiated by the laser from being absorbed during the laser irradiation. If completely removed, the bonding property between the scaly portion 911 and the polymer sealant 94 cannot be increased as expected. Therefore, the existing packaging structure 90 still has insufficient bonding force between the polymer resin and the metal components, causing the polymer sealant 94 to easily detach from the lead frame 91 and causing the existing packaging structure 90 to have poor moisture resistance. problems, there are indeed areas that need to be improved.

為解決現有封裝結構的高分子聚合物樹脂與金屬構件之間結合力不足的問題,本發明之目的在於提供一種金屬構件及具有該金屬構件的封裝結構,以提升該金屬構件與高分子聚合物樹脂之間的結合力,確保封裝後的該金屬構件不會與高分子聚合物樹脂脫離,進一步說明如下。 In order to solve the problem of insufficient bonding force between the polymer resin and the metal component of the existing packaging structure, the purpose of the present invention is to provide a metal component and a packaging structure having the metal component to improve the bonding force between the metal component and the polymer. The bonding force between resins ensures that the encapsulated metal component will not separate from the polymer resin, as further explained below.

本發明提供的一種金屬構件,其係包括有:複數個凹溝,各該凹溝呈直線狀且具有一V字形的剖面,使各該凹溝具有相對的兩內側面,各該凹溝的至少一該內側面上凸設有至少一錨固結構,該至少一錨固結構於所在的該凹溝內形成一頸縮部,各該凹溝具有一開口,且該開口的寬度W1與該頸縮部的寬度W2符合40%≦W2/W1<1。 The invention provides a metal component, which includes: a plurality of grooves, each of which is linear and has a V-shaped cross-section, so that each of the grooves has two opposite inner sides, and each of the grooves has a V-shaped cross-section. At least one anchoring structure is protruding from the inner surface of at least one, and the at least one anchoring structure forms a necked portion in the groove. Each groove has an opening, and the width W1 of the opening is consistent with the necking. The width W2 of the part complies with 40%≦W2/W1<1.

本發明提供的一種封裝結構,其係包括有:至少一如上述的金屬構件;至少一半導體裝置,與所述金屬構件形成電連接;以及一高分子聚合物樹脂,該高分子聚合物樹脂包覆該至少一半導體裝置且與所述金屬構件相結合,且該高分子聚合物樹脂伸入所述金屬構件的複數個凹溝,並包覆所述錨固結構。 The invention provides a packaging structure, which includes: at least one metal component as described above; at least one semiconductor device forming an electrical connection with the metal component; and a high molecular polymer resin, the high molecular polymer resin encapsulates The at least one semiconductor device is covered and combined with the metal component, and the high molecular polymer resin extends into a plurality of grooves of the metal component and covers the anchoring structure.

藉由上述的技術特徵,本發明透過雷射加工在該金屬構件的表面上形成複數個直線狀的所述凹溝,並且該凹溝開口的寬度W1與該頸縮部的 寬度W2為40%≦W2/W1<1,藉以提高該金屬構件與高分子聚合物樹脂的結合力,以解決金屬構件與高分子聚合物樹脂脫離的問題,並能讓該金屬構件經過封裝後形成的封裝結構具有較高的抗敏濕性以及維持電子組件功能正常的功效。因此,本發明有效改進現有封裝結構的問題,藉以提供一種金屬構件及具有該金屬構件的封裝結構。 With the above technical features, the present invention forms a plurality of linear grooves on the surface of the metal component through laser processing, and the width W1 of the groove opening is consistent with the width W1 of the necked portion. The width W2 is 40%≦W2/W1<1, so as to improve the bonding force between the metal component and the polymer resin, to solve the problem of separation of the metal component and the polymer resin, and to allow the metal component to be packaged The formed packaging structure has high resistance to moisture sensitivity and can maintain the normal function of electronic components. Therefore, the present invention effectively improves the problems of the existing packaging structure, thereby providing a metal component and a packaging structure having the metal component.

10,10A:本體 10,10A:Body

101:黏晶區 101: Adhesive crystal area

11,11A,11C:粗化區域 11,11A,11C: roughened area

20,20A,20B,20C:凹溝 20,20A,20B,20C: Groove

201,201A,201B,201C:開口 201,201A,201B,201C: opening

202,202A,202C:底部 202, 202A, 202C: bottom

21,21A,21B,21C:錨固結構 21,21A,21B,21C: Anchor structure

30A,30B,30C:高分子聚合物樹脂 30A, 30B, 30C: High molecular polymer resin

801:試片 801:Test piece

802:封裝塑料 802:Packaging plastic

D1:第一方向 D1: first direction

D2:第二方向 D2: second direction

H1:開口到底部的深度 H1: Depth from opening to bottom

H2:頸縮部到開口的深度 H2: Depth from neck to opening

P1:第一節距 P1: first pitch

P2:第二節距 P2: second pitch

W1:開口的寬度 W1: Width of opening

W2:頸縮部的寬度 W2: Width of neck part

90:封裝結構 90:Package structure

91:導線架 91: Lead frame

911:鱗狀部 911: Squamous part

92:半導體元件 92:Semiconductor components

93:金屬夾片 93:Metal clip

94:高分子聚合物封膠體 94: High molecular polymer sealant

圖1為本發明的金屬構件的較佳實施例局部放大的外觀俯視圖。 Figure 1 is a partially enlarged top view of the appearance of a preferred embodiment of the metal component of the present invention.

圖2A及圖2B為本發明的金屬構件的較佳實施例的凹溝的側視剖面圖。 2A and 2B are side cross-sectional views of the groove of the preferred embodiment of the metal component of the present invention.

圖3A及圖3B為本發明的金屬構件進行推力測試的尺寸及示意圖。 3A and 3B are dimensions and schematic diagrams of the metal component of the present invention subjected to thrust testing.

圖4為本發明以不同雷射節距加工的金屬構件所測得推力強度的分布圖。 Figure 4 is a distribution diagram of the measured thrust intensity of metal components processed with different laser pitches according to the present invention.

圖5為本發明以雷射節距為250微米加工的金屬構件在光學顯微鏡下觀察的照片。 Figure 5 is a photo of a metal component processed with a laser pitch of 250 microns according to the present invention and observed under an optical microscope.

圖6至圖9為圖5的金屬構件在不同放大倍率下的掃描式電子顯微鏡(SEM)照片。 Figures 6 to 9 are scanning electron microscope (SEM) photos of the metal component in Figure 5 at different magnifications.

圖10為圖5的金屬構件經高分子聚合物樹脂填充後的凹溝V字形剖面的側視剖面SEM照片。 Figure 10 is a side view cross-sectional SEM photograph of the V-shaped section of the groove of the metal component in Figure 5 after being filled with polymer resin.

圖11為本發明以節距為500微米加工的金屬構件經高分子聚合物樹脂填充後的側視剖面SEM照片。 Figure 11 is a side view cross-sectional SEM photograph of a metal component processed with a pitch of 500 microns according to the present invention and filled with polymer resin.

圖12至14為本發明以節距為100微米加工的金屬構件在不同放大倍率下的SEM照片。 Figures 12 to 14 are SEM photos at different magnifications of metal components processed with a pitch of 100 microns according to the present invention.

圖15為圖12的金屬構件經高分子聚合物樹脂填充後的側視剖面SEM照片。 Figure 15 is a side cross-sectional SEM photograph of the metal component in Figure 12 after being filled with polymer resin.

圖16為現有封裝結構的側視剖面圖。 Figure 16 is a side cross-sectional view of a conventional packaging structure.

為能詳細瞭解本發明的技術特徵及實用功效,並且能依照說明書的內容來實現,茲進一步以圖式所示的較佳實施例詳細說明如後:本發明提供一種金屬構件,其係用於半導體之封裝結構,該金屬構件的較佳實施例如圖1、圖2A及圖2B所示,係包括有一本體10以及複數個凹溝20,其中,該本體10呈一片狀結構,且該本體10上設有至少一粗化區域11,所述凹溝20係位於該粗化區域11上,所述粗化區域11用於提高該本體10與一高分子聚合物樹脂的結合力。 In order to understand the technical features and practical effects of the present invention in detail, and to realize them according to the contents of the description, the preferred embodiments shown in the drawings are further described in detail as follows: The present invention provides a metal component, which is used for The preferred embodiment of the semiconductor packaging structure of the metal component is as shown in Figure 1, Figure 2A and Figure 2B, which includes a body 10 and a plurality of grooves 20, wherein the body 10 has a sheet-like structure, and the body There is at least one roughened area 11 on the body 10, and the groove 20 is located on the roughened area 11. The roughened area 11 is used to improve the bonding force between the body 10 and a high molecular polymer resin.

具體而言,所述粗化區域11可以涵蓋該本體10全部或部分的表面。舉例來說,該金屬構件可為一導線架,如圖1所示,該本體10的表面可區分為一黏晶區101以及一所述粗化區域11,該黏晶區101用於設置一半導體元件,例如絕緣閘雙極電晶體(Insulated Gate Bipolar Transistor,IGBT)、金屬氧化物半導體場效電晶體(Metal-Oxide-Semiconductor Field-Effect Transistor,MOSFET)、積體電路(Integrated Circuit,IC)、大型積體電路(Large-Scale Integration,LSI)等,該粗化區域11圍繞在該黏晶區101的外圍;或者,該金屬構件亦可為一金屬夾片(clip),則該本體10的局部或全部表面為所述粗化區域11,其中,所述金屬夾片用於連接一半導體元件以及一導線架的接腳,藉以讓電流通過,且所述金屬夾片尤適用於功率半導體的封裝結構。 Specifically, the roughened area 11 may cover all or part of the surface of the body 10 . For example, the metal component can be a lead frame. As shown in Figure 1, the surface of the body 10 can be divided into a die-bonding area 101 and a roughened area 11. The die-bonding area 101 is used to set a Semiconductor components, such as Insulated Gate Bipolar Transistor (IGBT), Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), Integrated Circuit (IC) , large-scale integrated circuit (Large-Scale Integration, LSI), etc., the roughened area 11 surrounds the periphery of the die bonding area 101; or, the metal component can also be a metal clip (clip), then the body 10 Part or all of the surface is the roughened area 11, where the metal clip is used to connect a semiconductor component and a pin of a lead frame to allow current to pass, and the metal clip is especially suitable for power semiconductors. packaging structure.

進一步,該本體10可為裸銅,則所述粗化區域11設於裸銅表面上,即該複數個凹溝20係由雷射直接對裸銅表面加工;該本體10亦可為由一基材以及一鍍於該基材表面的鍍層所構成,所述粗化區域11設於該鍍層的表面上,即該複數個凹溝20係由雷射在該鍍層的表面進行加工,具有所述鍍層時,該基材可為金屬材質或非金屬材質,金屬材質例如為銅材,非金屬材質例如陶瓷,該鍍層可為一鎳質鍍層或為一銅質鍍層等。 Furthermore, the body 10 can be made of bare copper, and the roughened area 11 is provided on the surface of the bare copper, that is, the plurality of grooves 20 are processed directly on the surface of the bare copper by laser; the body 10 can also be made of a It consists of a base material and a coating layer plated on the surface of the base material. The roughened area 11 is provided on the surface of the coating layer, that is, the plurality of grooves 20 are processed by laser on the surface of the coating layer. When plating, the base material can be a metal material or a non-metal material. The metal material can be copper, for example, and the non-metal material can be ceramic. The plating layer can be a nickel plating or a copper plating, etc.

請參閱如圖1及圖2A所示,該複數個凹溝20係透過雷射加工以形成所述粗化區域11,各該凹溝20呈直線狀且具有一V字形的剖面,使各該凹溝20具有相對的兩內側面、一開口201及一底部202,其中該底部202位於所述V字形剖面的尖端位置,與該開口201相對;各該凹溝20的至少一該內側面上凸設有至少一錨固結構21,且該至少一錨固結構21於所在的該凹溝20內形成一頸縮部,且該開口201的寬度W1與該頸縮部的寬度W2符合40%≦W2/W1<1。 Please refer to FIG. 1 and FIG. 2A. The plurality of grooves 20 are formed by laser processing to form the roughened area 11. Each groove 20 is linear and has a V-shaped cross-section, so that each groove 20 is linear and has a V-shaped cross-section. The groove 20 has two opposite inner surfaces, an opening 201 and a bottom 202, wherein the bottom 202 is located at the tip of the V-shaped cross section, opposite to the opening 201; at least one inner surface of each groove 20 At least one anchoring structure 21 is protruding, and the at least one anchoring structure 21 forms a necked portion in the groove 20, and the width W1 of the opening 201 and the width W2 of the necked portion conform to 40%≦W2 /W1<1.

在本發明的較佳實施例中,係使用非連續來回雷射照射方式形成所述凹溝20,但不以此為限。以其他雷射加工方式進行直線行程蝕雕亦可得到所述凹溝20,即亦可以得到各該凹溝20具有V字形的剖面,且各該凹溝20的內側面上形成有所述錨固結構21的結構特徵。 In a preferred embodiment of the present invention, discontinuous back-and-forth laser irradiation is used to form the groove 20, but it is not limited to this. The grooves 20 can also be obtained by linear stroke etching using other laser processing methods, that is, each groove 20 can also have a V-shaped cross section, and the anchor is formed on the inner surface of each groove 20 Structural Characteristics of Structure 21.

藉由上述技術特徵,當一高分子聚合物樹脂成形於該金屬構件的表面,而與該本體10結合時,所述高分子聚合物樹脂會伸入並填滿各該凹溝20,並包覆所述錨固結構21,使所述高分子聚合物樹脂密合於該金屬構件的表面,並提高所述高分子聚合物樹脂與該金屬構件的結合力。 With the above technical features, when a high molecular polymer resin is formed on the surface of the metal component and combined with the body 10, the high molecular polymer resin will extend into and fill each of the grooves 20 and cover the grooves 20. Covering the anchoring structure 21 makes the high molecular polymer resin closely adhere to the surface of the metal component, and improves the bonding force between the high molecular polymer resin and the metal component.

請參閱如圖2A及圖2B所示,各該凹溝20的V字形剖面上凸設有兩個該錨固結構21,該兩錨固結構21分別設於該兩內側面,且該兩錨固結構21共同形成該頸縮部。 Please refer to FIG. 2A and FIG. 2B. Two anchoring structures 21 are protruding from the V-shaped cross section of each groove 20. The two anchoring structures 21 are respectively provided on the two inner sides, and the two anchoring structures 21 together form the necking.

若W2/W1<40%,則該頸縮部的寬度W2過窄,所述高分子聚合物樹脂不易通過進而填滿該凹溝20,如此一來,所述高分子聚合物樹脂無法完全包覆該兩錨固結構21、該兩錨固結構21不能發揮錨固效果,進而造成高分子聚合物樹脂仍會從該金屬構件的表面脫離的狀況,而仍可能出現如現有封裝結構導致電子元件失效的問題。另一方面,若W2/W1≧1,則各該凹溝20非呈V字形剖面,因此不易形成所述錨固結構21,因此也無法產生錨固效果以增加高分子聚合物樹脂與該金屬構件之結合力。 If W2/W1<40%, the width W2 of the necked portion is too narrow, and it is difficult for the polymer resin to pass through and fill the groove 20. As a result, the polymer resin cannot completely cover the groove 20. Covering the two anchoring structures 21, the two anchoring structures 21 cannot exert the anchoring effect, resulting in a situation where the polymer resin will still detach from the surface of the metal component, and problems such as the failure of electronic components caused by the existing packaging structure may still occur. . On the other hand, if W2/W1≧1, each groove 20 does not have a V-shaped cross-section, so it is difficult to form the anchoring structure 21, and therefore the anchoring effect cannot be produced to increase the interaction between the polymer resin and the metal member. Bonding power.

進一步,請參閱如圖2B所示,該開口201到該底部202之間的深度H1與該兩錨固結構21之間形成的該頸縮部到該開口201的深度H2符合25%≦H2/H1≦60%,以利產生能抑制所述高分子聚合物樹脂仍會從該金屬構件的表面脫離的錨固效果。當該H2/H1>60%,該兩錨固結構21形成的位置過於靠近該凹溝20的底部202,由於所述凹溝20呈V字形,該凹溝20的寬度於愈靠近該底部202的位置愈窄,所述高分子聚合物樹脂不易通過所述頸縮部而滲入該底部202,故不利所述高分子聚合物樹脂填滿該凹溝20位於該兩錨固結構21下方的位置,會產生所述高分子聚合物樹脂無法完全包覆該兩錨固結構21、該兩錨固結構21不能發揮錨固效果的問題;當H2/H1<25%,該兩錨固結構21形成於靠近該開口201的位置,該凹溝20的寬度於愈靠近該開口201的位置愈寬,使所述頸縮部寬度亦相對較寬,致使對於所述高分子聚合物樹脂的錨固效果不佳。較佳的是,該開口201到該底部202之間的深度H1大於50微米,可以得到較佳的結果。 Further, please refer to FIG. 2B , the depth H1 between the opening 201 and the bottom 202 and the depth H2 from the necking portion formed between the two anchoring structures 21 to the opening 201 comply with 25%≦H2/H1 ≦60%, in order to produce an anchoring effect that can inhibit the detachment of the polymer resin from the surface of the metal component. When H2/H1>60%, the position of the two anchoring structures 21 is too close to the bottom 202 of the groove 20. Since the groove 20 is V-shaped, the width of the groove 20 is closer to the bottom 202. The narrower the position, the harder it is for the polymer resin to penetrate into the bottom 202 through the constriction. Therefore, it is unfavorable for the polymer resin to fill the groove 20 below the two anchoring structures 21, which will cause There is a problem that the high molecular polymer resin cannot completely cover the two anchoring structures 21 and the two anchoring structures 21 cannot exert the anchoring effect; when H2/H1<25%, the two anchoring structures 21 are formed close to the opening 201 Position, the width of the groove 20 becomes wider closer to the opening 201, so that the width of the necked portion is also relatively wider, resulting in poor anchoring effect on the high molecular polymer resin. Preferably, the depth H1 between the opening 201 and the bottom 202 is greater than 50 microns, so that better results can be obtained.

請參閱如圖1所示,該本體10的至少一粗化區域11上定義有一第一方向D1以及一與該第一方向D1相交的第二方向D2,該複數個凹溝20係沿著該第一方向D1或該第二方向D2延伸,即部分的所述凹溝20沿著該第一方向D1直線地延伸,其他的所述凹溝20沿著該第二方向D2直線的延伸,而與沿著該第一方向D1延伸的凹溝20相交。 Please refer to FIG. 1 . A first direction D1 and a second direction D2 intersecting the first direction D1 are defined on at least one roughened area 11 of the body 10 . The plurality of grooves 20 are along the The first direction D1 or the second direction D2 extends, that is, some of the grooves 20 extend linearly along the first direction D1, and other grooves 20 extend linearly along the second direction D2, and Intersect with the groove 20 extending along the first direction D1.

藉由雷射加工形成所述凹溝20的過程中,使該金屬構件的材料局部變形,進而在所述凹溝20的內側面上形成隆起的所述錨固結構21,藉以提升該金屬構件與所述高分子聚合物樹脂的結合力。 During the process of forming the groove 20 by laser processing, the material of the metal component is partially deformed, thereby forming the bulging anchoring structure 21 on the inner surface of the groove 20, thereby lifting the metal component and The binding force of the high molecular polymer resin.

進一步,如圖1所示,沿著所述第一方向D1排列的任兩相鄰所述凹溝20之間形成一第一節距P1,沿著所述第二方向D2排列的任兩相鄰所述凹溝20之間形成一第二節距P2。不論係沿著該第一方向D1相鄰或沿著該第二方向 D2相鄰,任兩相鄰的所述凹溝20之間形成的節距P1、P2均介於100微米至1000微米之間,包含端點值。若所述節距P1、P2大於1000微米,相鄰兩所述凹溝20之間的距離過大,雷射能量不易作用於較大間距的各凹溝20內而不易形成所述錨固結構21,因此無法提升該金屬構件與所述高分子聚合物樹脂的結合力;若所述節距P1、P2小於100微米,相鄰兩所述凹溝20之間的距離過小,會因雷射能量過於集中而造成整體呈現融熔狀態而使所述凹溝20的V字形之形狀或是錨固結構21不明顯的問題。在圖1所示的本發明較佳實施例中,該第一節距P1與該第二節距P2長度相等。 Further, as shown in FIG. 1 , a first pitch P1 is formed between any two adjacent grooves 20 arranged along the first direction D1, and any two adjacent grooves 20 arranged along the second direction D2 form a first pitch P1. A second pitch P2 is formed between adjacent grooves 20 . Whether adjacent along the first direction D1 or along the second direction D2 is adjacent, and the pitches P1 and P2 formed between any two adjacent grooves 20 are between 100 microns and 1000 microns, inclusive. If the pitches P1 and P2 are greater than 1000 microns, the distance between two adjacent grooves 20 is too large, and it is difficult for laser energy to act in each groove 20 with a larger spacing, making it difficult to form the anchoring structure 21. Therefore, the bonding force between the metal component and the polymer resin cannot be improved; if the pitches P1 and P2 are less than 100 microns and the distance between two adjacent grooves 20 is too small, the laser energy will be too high. The concentration causes the whole to be in a molten state, making the V-shaped shape of the groove 20 or the anchoring structure 21 not obvious. In the preferred embodiment of the present invention shown in FIG. 1 , the first pitch P1 and the second pitch P2 are equal in length.

為能確實驗證本發明的技術功效,對本發明較佳實施例的金屬構件樣品進行推力測試,該推力測試的實施方式係根據SEMI-standard(Semiconductor Standard)G69-0996的量測規範。在該規範中,訂定了封裝材料環氧樹脂(epoxy molding compound,EMC;即所述高分子聚合物樹脂)與導線架之間的黏著力強度量測規範,分別有剪力法(Shear Method)、拉力法(Pull Method)以及三點彎折法(Three-Pont Bending Method)三種,每一種都有標準的試片801尺寸、封裝塑料802尺寸以及量測的方式。本發明的推力測試採取剪力法進行,如圖3A、圖3B及表1所示,其試片801的尺寸與封裝塑料802的尺寸。 In order to truly verify the technical efficacy of the present invention, a thrust test was conducted on the metal component sample of the preferred embodiment of the present invention. The implementation of the thrust test was in accordance with the measurement specifications of SEMI-standard (Semiconductor Standard) G69-0996. In this specification, the adhesion strength measurement specification between the packaging material epoxy resin (epoxy molding compound, EMC; that is, the polymer resin) and the lead frame is specified, including the shear method (Shear Method). ), Pull Method and Three-Pont Bending Method, each of which has standard test piece 801 size, packaging plastic 802 size and measurement method. The thrust test of the present invention adopts the shear force method, as shown in Figure 3A, Figure 3B and Table 1. The size of the test piece 801 and the size of the packaging plastic 802.

Figure 111131525-A0305-02-0008-1
Figure 111131525-A0305-02-0008-1

上述封裝塑料802係採用Nitto GE-1030L環氧樹脂,在175℃的溫度下,該封裝塑料802預固化6小時。進一步,以所述節距P1、P2為變數,在所述金屬構件上以不同節距P1、P2形成該複數個凹溝20以製備所述試片801,並透過剪力法,即如圖3B所示,水平地推抵該試片801,測試該試片801與該封裝 塑料802的結合強度。請參閱如圖4及表2所示,圖4中的各個點代表以不同雷射節距加工的相對應節距P1、P2所製成的試片801在進行25至36次測試所得資料的平均值,及表2的平均強度,而圖4中的各個點的上、下引線代表在95%信賴區間的數值分布情形。再進一步,表2中的錨固結構21形成比例代表在根據相對應節距P1、P2形成的所述凹溝20上抽樣10個位置,而在該10個位置上形成所述錨固結構21的比例,例如6/10即代表10個位置中有6個位置上各形成有至少一所述錨固結構21,而具有所述頸縮部的結構特徵。 The above-mentioned packaging plastic 802 is made of Nitto GE-1030L epoxy resin. At a temperature of 175°C, the packaging plastic 802 is pre-cured for 6 hours. Further, using the pitches P1 and P2 as variables, the plurality of grooves 20 are formed on the metal member at different pitches P1 and P2 to prepare the test piece 801, and through the shear force method, as shown in the figure As shown in 3B, push the test piece 801 horizontally to test the test piece 801 and the package. The bonding strength of plastic 802. Please refer to Figure 4 and Table 2. Each point in Figure 4 represents the data obtained from 25 to 36 tests of the test piece 801 made with the corresponding pitches P1 and P2 processed by different laser pitches. The average value, and the average intensity in Table 2, while the upper and lower leads of each point in Figure 4 represent the distribution of values within the 95% confidence interval. Furthermore, the formation ratio of the anchor structure 21 in Table 2 represents the ratio of forming the anchor structure 21 at 10 positions sampled on the groove 20 formed according to the corresponding pitches P1 and P2. , for example, 6/10 means that at least one of the anchoring structures 21 is formed at 6 of the 10 positions, and has the structural characteristics of the necking portion.

Figure 111131525-A0305-02-0009-2
Figure 111131525-A0305-02-0009-2

如表2所示,當所述節距P1、P2介於100微米至500微米之間(包含端點值)時,各該凹溝20內形成所述錨固結構21的比例較高,能提供較高的 結合強度,例如表2所示,當所述節距P1、P2介於100微米至500微米之間,測試所得強度皆大於16.5公斤力。由表2及圖4可知,當該試片801具有所述錨固結構21時,其與該封裝塑料802的結合強度介於13至35公斤力,優於裸銅或是所述凹溝20具有大於1000微米的節距P1、P2之試片801。 As shown in Table 2, when the pitches P1 and P2 are between 100 microns and 500 microns (inclusive), the proportion of the anchoring structures 21 formed in each groove 20 is relatively high, which can provide higher The bonding strength, for example, is shown in Table 2. When the pitches P1 and P2 are between 100 microns and 500 microns, the tested strengths are all greater than 16.5 kilograms of force. It can be seen from Table 2 and Figure 4 that when the test piece 801 has the anchoring structure 21, the bonding strength between the test piece 801 and the packaging plastic 802 is between 13 and 35 kilograms of force, which is better than that of bare copper or that the groove 20 has Test piece 801 with pitches P1 and P2 greater than 1000 microns.

進一步,如表2所示,所述節距P1、P2愈小,W2/W1的比值大致隨之愈小,換言之,相較於同樣的該開口201寬度W1,隨著所述節距P1、P2愈小,所述錨固結構21愈長,使所述凹溝20的頸縮部的寬度W2就愈小。如此一來,當高分子聚合物樹脂填滿所述凹溝20,該頸縮部即能提供更高的結合力。 Further, as shown in Table 2, the smaller the pitches P1 and P2 are, the smaller the ratio of W2/W1 will be. In other words, compared with the same width W1 of the opening 201, as the pitches P1, P2 are smaller, the ratio of W2/W1 will be smaller. The smaller P2 is, the longer the anchoring structure 21 is, so that the width W2 of the necked portion of the groove 20 is smaller. In this way, when the high molecular polymer resin fills the groove 20, the necking portion can provide higher bonding force.

較佳的是,當該開口201的寬度W1與該頸縮部的寬度W2符合50%≦W2/W1≦75%時,各該凹溝20、各該錨固結構21與所述頸縮部能產生較佳的錨固效果。 Preferably, when the width W1 of the opening 201 and the width W2 of the necked portion comply with 50%≦W2/W1≦75%, each groove 20, each anchor structure 21 and the necked portion can be Produce better anchoring effect.

較佳的是,當該開口201到該底部202之間的深度H1與該頸縮部到該開口201的深度H2符合40%≦H2/H1≦55%時,各該凹溝20、各該錨固結構21與所述頸縮部能產生較佳的錨固效果。 Preferably, when the depth H1 between the opening 201 and the bottom 202 and the depth H2 from the necking part to the opening 201 comply with 40%≦H2/H1≦55%, each groove 20, each The anchoring structure 21 and the necking portion can produce a better anchoring effect.

當所述節距P1、P2分別為250微米時,該金屬構件的所述粗化區域11A係如圖5所示,由於該第一節距P1與該第二節距P2相等,且該第一方向D1與該第二方向D2相交,使該複數個凹溝20A在該本體10A表面形成菱形格紋;而當該第一方向D1與該第二方向D2相互垂直,該複數個凹溝20A會形成正方形格紋。進一步,請參閱如圖6及圖7所示,該複數個凹溝20A交錯地凹設於所述粗化區域11A,且如圖8至圖10所示,所述凹溝20A的兩內側面形成一V字形,且V字形頂部形成所述開口201A,所述凹溝20A底部形成所述底部202A。如圖10所示,所述凹溝20A於部分區域上形成兩所述錨固結構21A。 When the pitches P1 and P2 are 250 microns respectively, the roughened area 11A of the metal component is as shown in FIG. 5 , because the first pitch P1 and the second pitch P2 are equal, and the third pitch P1 is equal to the second pitch P2. One direction D1 intersects the second direction D2, so that the plurality of grooves 20A form a rhombus pattern on the surface of the body 10A; and when the first direction D1 and the second direction D2 are perpendicular to each other, the plurality of grooves 20A A square pattern will form. Further, please refer to FIGS. 6 and 7 , the plurality of grooves 20A are staggeredly recessed in the roughened area 11A, and as shown in FIGS. 8 to 10 , both inner sides of the grooves 20A are A V-shape is formed, and the top of the V-shape forms the opening 201A, and the bottom of the groove 20A forms the bottom 202A. As shown in FIG. 10 , the groove 20A forms two anchoring structures 21A in a partial area.

請參閱如圖10所示,本發明還提供一種封裝結構,該封裝結構 為如圖1、圖5及圖6所示的該金屬構件經封裝後所形成,該封裝結構進一步包括有至少一半導體裝置以及一高分子聚合物樹脂30A,所述半導體裝置與所述金屬構件形成電連接;該高分子聚合物樹脂30A係經模塑成形與該金屬構件相結合,且該高分子聚合物樹脂30A伸入該金屬構件的複數個凹溝20A,並包覆所述錨固結構21A。如圖10所示,該高分子聚合物樹脂30A填滿所述凹溝20A。如此一來,當該封裝結構受到外力或應力作用時,由於該高分子聚合物樹脂30A填滿所述凹溝20A且包覆所述錨固結構21A,其與該金屬構件之間藉由錨固效果具備高結合力,能有效防止該高分子聚合物樹脂30A自該金屬構件脫離,並因此能提升該封裝結構的抗敏濕性,有效減少電子組件失效的問題。本發明上述的封裝結構中的該金屬構件是以圖5及圖6之凹溝20A節距P1、P2為250微米者為例說明,然本發明之封裝結構中的該金屬構件不限於此。另外,本發明封裝結構中具有所述凹溝20A的金屬構件,可以是一導線架或一金屬夾片;或者,本發明之封裝結構亦可包括兩該金屬構件,分別作為一導線架及一金屬夾片。 Please refer to Figure 10. The present invention also provides a packaging structure. The packaging structure The metal component as shown in Figures 1, 5 and 6 is formed after encapsulation. The packaging structure further includes at least one semiconductor device and a polymer resin 30A. The semiconductor device and the metal component Form an electrical connection; the polymer resin 30A is molded and combined with the metal component, and the polymer resin 30A extends into a plurality of grooves 20A of the metal component and covers the anchoring structure 21A. As shown in FIG. 10 , the high molecular polymer resin 30A fills the groove 20A. In this way, when the packaging structure is subjected to external force or stress, since the high molecular polymer resin 30A fills the groove 20A and covers the anchoring structure 21A, there is an anchoring effect between it and the metal component. The high bonding force can effectively prevent the polymer resin 30A from being detached from the metal component, thereby improving the moisture resistance of the packaging structure and effectively reducing the failure of electronic components. The metal component in the package structure of the present invention is illustrated by taking the pitch P1 and P2 of the grooves 20A in FIGS. 5 and 6 as 250 microns as an example. However, the metal component in the package structure of the present invention is not limited thereto. In addition, the metal component with the groove 20A in the packaging structure of the present invention can be a lead frame or a metal clip; or, the packaging structure of the present invention can also include two metal components, serving as a lead frame and a metal clip respectively. Metal clip.

請參閱如圖11所示,當該封裝結構的該金屬構件的所述節距P1、P2分別為500微米時,所述凹溝20B的截面仍為V字形,且所述凹溝20B的兩內側面的中段仍形成兩所述錨固結構21B,藉以提供該高分子聚合物樹脂30B的錨固效果,而解決本案所欲解決的問題。 Please refer to Figure 11. When the pitches P1 and P2 of the metal component of the package structure are 500 microns respectively, the cross section of the groove 20B is still V-shaped, and the two sides of the groove 20B are still V-shaped. The two anchoring structures 21B are still formed in the middle section of the inner side to provide the anchoring effect of the high molecular polymer resin 30B and solve the problem to be solved in this case.

再進一步,相較於如圖6至圖9所示的金屬構件表面,請參閱如圖12至圖14所示,當本發明的金屬構件的所述節距P1、P2分別為100微米時,在雷射蝕雕的過程中,有更多金屬材料於被熔化後堆積於所述粗化區域11C的表面,可以進一步增加所述粗化區域11C的表面粗糙度,藉以提升高分子聚合物樹脂的錨固效果。此外,如圖15所示,該金屬構件經高分子聚合物樹脂30C填充後的剖面,亦可明顯看出各該凹溝20C呈一V字形剖面,而在該開口201C 與該底部202C之間的位置的兩內側面上形成相對的兩所述錨固結構21C,因此,該高分子聚合物樹脂30C填滿所述凹溝20C後,即能與該金屬構件產生較高的結合力,並能提升該封裝結構的抗敏濕性,有效減少電子組件失效的問題。 Furthermore, compared with the surface of the metal component as shown in Figures 6 to 9, please refer to Figures 12 to 14, when the pitches P1 and P2 of the metal component of the present invention are 100 microns respectively, During the laser etching process, more metal materials are melted and deposited on the surface of the roughened area 11C, which can further increase the surface roughness of the roughened area 11C, thereby improving the polymer resin. anchoring effect. In addition, as shown in Figure 15, in the cross-section of the metal component after being filled with the polymer resin 30C, it can be clearly seen that each groove 20C has a V-shaped cross-section, and in the opening 201C Two opposite anchoring structures 21C are formed on both inner surfaces of the position between the bottom 202C and the bottom 202C. Therefore, after the high molecular polymer resin 30C fills the groove 20C, it can create a higher level with the metal component. The bonding force can improve the moisture resistance of the packaging structure, effectively reducing the failure of electronic components.

藉由上述的技術特徵,本發明透過雷射蝕雕加工在該金屬構件的表面上形成複數個直線狀的所述凹溝20、20A、20B、20C,並且在40%≦W2/W1<1的情況下,所述凹溝20、20A、20B、20C的至少一該內側面上凸設至少一所述錨固結構21、21A、21B、21C,於所在的該凹溝20、20A、20B、20C內形成該頸縮部,藉以提高該金屬構件與高分子聚合物樹脂30A、30B、30C的結合力,以解決金屬構件與高分子聚合物樹脂30A、30B、30C脫離的問題,並能讓該金屬構件經過封裝後形成的封裝結構具有較高的抗敏濕性以及維持電子組件功能正常的功效。因此,本發明有效改進現有封裝結構的問題,藉以提供一種金屬構件及具有該金屬構件的封裝結構。 With the above technical features, the present invention forms a plurality of linear grooves 20, 20A, 20B, and 20C on the surface of the metal component through laser etching processing, and when 40%≦W2/W1<1 In the case of , at least one of the anchoring structures 21, 21A, 21B, 21C is protruding from at least one inner surface of the grooves 20, 20A, 20B, 20C, where the grooves 20, 20A, 20B, The necking portion is formed in 20C to improve the bonding force between the metal component and the polymer resin 30A, 30B, and 30C, thereby solving the problem of separation of the metal component and the polymer resin 30A, 30B, and 30C, and allowing The encapsulation structure formed after encapsulation of the metal component has high resistance to moisture sensitivity and can maintain the normal function of the electronic component. Therefore, the present invention effectively improves the problems of the existing packaging structure, thereby providing a metal component and a packaging structure having the metal component.

以上所述,僅是本發明的較佳實施例,並非對本發明任何形式上的限制,任何所屬技術領域中具有通常知識者,若在不脫離本發明所提技術方案的範圍內,利用本發明所揭示技術內容所作出局部更動或修飾的等效實施例,並且未脫離本發明的技術方案內容,均仍屬本發明的技術方案的範圍內。 The above are only preferred embodiments of the present invention and do not limit the present invention in any form. Anyone with ordinary knowledge in the technical field can utilize the present invention without departing from the scope of the technical solution proposed by the present invention. Equivalent embodiments with partial changes or modifications to the disclosed technical content without departing from the technical content of the present invention are still within the scope of the technical solution of the present invention.

20:凹溝 20:Gutter

201:開口 201:Open your mouth

21:錨固結構 21:Anchor structure

W1:開口的寬度 W1: Width of opening

W2:頸縮部的寬度 W2: Width of neck part

Claims (10)

一種金屬構件,其係包括有: 複數個凹溝,各該凹溝呈直線狀且具有一V字形的剖面,使各該凹溝具有相對的兩內側面,各該凹溝的至少一該內側面上凸設有至少一錨固結構,該至少一錨固結構於所在的該凹溝內形成一頸縮部,各該凹溝具有一開口,且該開口的寬度W1與該頸縮部的寬度W2符合40%≦W2/W1<1。 A metal component, which includes: A plurality of grooves, each groove is linear and has a V-shaped cross-section, so that each groove has two opposite inner sides, and at least one anchoring structure is protruding from at least one inner side of each groove. , the at least one anchoring structure forms a necked portion in the groove, each groove has an opening, and the width W1 of the opening and the width W2 of the necked portion comply with 40%≦W2/W1<1 . 如請求項1所述之金屬構件,其中各該凹溝的V字形剖面上凸設有兩個該錨固結構,該兩錨固結構分別設於該兩內側面,且該兩錨固結構共同形成該頸縮部。The metal member as claimed in claim 1, wherein two of the anchoring structures are protruding from the V-shaped section of each groove, the two anchoring structures are respectively provided on the two inner sides, and the two anchoring structures together form the neck. Shrinkage. 如請求項1所述之金屬構件,其中該開口的寬度W1與該頸縮部的寬度W2符合50%≦W2/W1≦75%。The metal member as claimed in claim 1, wherein the width W1 of the opening and the width W2 of the necked portion comply with 50%≦W2/W1≦75%. 如請求項1所述之金屬構件,其中各該凹溝具有一底部,該開口到該底部之間的深度H1與該頸縮部到該開口的深度H2符合25%≦H2/H1≦60%。The metal component as claimed in claim 1, wherein each groove has a bottom, and the depth H1 from the opening to the bottom and the depth H2 from the necking portion to the opening comply with 25%≦H2/H1≦60% . 如請求項4所述之金屬構件,其中該開口到該底部之間的深度H1與該頸縮部到該開口的深度H2符合40%≦H2/H1≦55%。The metal member as claimed in claim 4, wherein the depth H1 between the opening and the bottom and the depth H2 from the necking part to the opening comply with 40%≦H2/H1≦55%. 如請求項1所述之金屬構件,其中任兩相鄰所述凹溝之間形成一節距,且該節距介於100微米至1000微米之間,包含端點值。The metal component according to claim 1, wherein a pitch is formed between any two adjacent grooves, and the pitch is between 100 microns and 1000 microns, inclusive. 如請求項6所述之金屬構件,其中該節距介於100微米至500微米之間,包含端點值。The metal component of claim 6, wherein the pitch is between 100 microns and 500 microns, inclusive. 如請求項1至7中任一項所述之金屬構件,其中該金屬構件為一導線架。The metal component as claimed in any one of claims 1 to 7, wherein the metal component is a lead frame. 如請求項1至7中任一項所述之金屬構件,其中該金屬構件為一金屬夾片。The metal component according to any one of claims 1 to 7, wherein the metal component is a metal clip. 一種封裝結構,其係包括有: 至少一如請求項1至9中任一項所述的金屬構件; 至少一半導體裝置,與所述金屬構件形成電連接;以及 一高分子聚合物樹脂,該高分子聚合物樹脂包覆該至少一半導體裝置且與所述金屬構件相結合,且該高分子聚合物樹脂伸入所述金屬構件的複數個凹溝,並包覆所述錨固結構。 A packaging structure, which includes: At least one metal component as described in any one of claims 1 to 9; At least one semiconductor device forms an electrical connection with the metal member; and A high molecular polymer resin, the high molecular polymer resin covers the at least one semiconductor device and is combined with the metal component, and the high molecular polymer resin extends into a plurality of grooves of the metal component and covers Cover the anchoring structure.
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH105895A (en) * 1996-06-13 1998-01-13 Sanken Electric Co Ltd Production of metal supporting plate of resin seal type electronic part
TWM489489U (en) * 2012-12-18 2014-11-11 Ying Yeeh Enterprise Co Ltd Quantitative feed supplier
TW202046828A (en) * 2019-06-12 2020-12-16 金居開發股份有限公司 Advanced reverse treated electrodeposited copper foil and copper clad laminate using the same
TW202105536A (en) * 2019-03-14 2021-02-01 日商三井化學東賽璐股份有限公司 Method for manufacturing electronic device
TW202120292A (en) * 2019-11-25 2021-06-01 日商Towa股份有限公司 Method for manufacturing lead frame after resin molding, method for manufacturing resin-molded product and lead frame wherein no resin remains on the upper surface of the lead frame

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH105895A (en) * 1996-06-13 1998-01-13 Sanken Electric Co Ltd Production of metal supporting plate of resin seal type electronic part
TWM489489U (en) * 2012-12-18 2014-11-11 Ying Yeeh Enterprise Co Ltd Quantitative feed supplier
TW202105536A (en) * 2019-03-14 2021-02-01 日商三井化學東賽璐股份有限公司 Method for manufacturing electronic device
TW202046828A (en) * 2019-06-12 2020-12-16 金居開發股份有限公司 Advanced reverse treated electrodeposited copper foil and copper clad laminate using the same
TW202120292A (en) * 2019-11-25 2021-06-01 日商Towa股份有限公司 Method for manufacturing lead frame after resin molding, method for manufacturing resin-molded product and lead frame wherein no resin remains on the upper surface of the lead frame

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