TWI820777B - Photoelectrochemical device - Google Patents
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- TWI820777B TWI820777B TW111124570A TW111124570A TWI820777B TW I820777 B TWI820777 B TW I820777B TW 111124570 A TW111124570 A TW 111124570A TW 111124570 A TW111124570 A TW 111124570A TW I820777 B TWI820777 B TW I820777B
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 68
- 239000004408 titanium dioxide Substances 0.000 claims abstract description 34
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 125000004433 nitrogen atom Chemical group N* 0.000 claims abstract description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 26
- 229910052786 argon Inorganic materials 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 230000007423 decrease Effects 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 239000000969 carrier Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000000446 fuel Substances 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021607 Silver chloride Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- IWLUJCZGMDWKRT-UHFFFAOYSA-N azane oxygen(2-) titanium(4+) Chemical compound N.[O-2].[Ti+4].[O-2] IWLUJCZGMDWKRT-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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Abstract
本發明係一種光電化學裝置，包含有一基板、一氮化鈦層以及一氮摻雜二氧化鈦層，該氮化鈦層係覆蓋於該基板，該氮摻雜二氧化鈦層係覆蓋於該氮化鈦層，該氮摻雜二氧化鈦層中的氮原子比例由下而上在2.5~4.5 at%範圍中改變。藉此，該光電化學裝置可提昇光電轉換效能，且其製程可有效簡化，以縮短製程時間並降低製造成本。The invention is a photoelectrochemical device, which includes a substrate, a titanium nitride layer and a nitrogen-doped titanium dioxide layer. The titanium nitride layer covers the substrate, and the nitrogen-doped titanium dioxide layer covers the titanium nitride layer. , the proportion of nitrogen atoms in the nitrogen-doped titanium dioxide layer changes from bottom to top in the range of 2.5~4.5 at%. Thereby, the photoelectrochemical device can improve the photoelectric conversion efficiency, and its manufacturing process can be effectively simplified to shorten the manufacturing time and reduce the manufacturing cost.
Description
本發明與半導體光電元件有關，特別是指一種光電化學裝置。The present invention relates to semiconductor optoelectronic components, and in particular, to a photoelectrochemical device.
將太陽光能轉化為可儲存、易於運送的化學燃料等永續與再生能源議題，近年隨環保意識抬頭逐漸成為主流。相較於光伏(photovoltaics)之固態接面元件，光電化學裝置具備製程相對簡單、經濟與應用範圍較廣的優勢。光電化學裝置的作用機制，是透過半導體材料製備光電極，光電極在吸收光線後，激發半導體內載子進行價帶(valence band, VB)到導帶(conduction band, CB)的躍遷，進而造成載子流動產生電能，或透過載子對水分子的氧化或還原，生產化學燃料。Sustainable and renewable energy issues such as converting solar energy into chemical fuels that can be stored and easily transported have gradually become mainstream in recent years with the rise of environmental awareness. Compared with solid-state junction components of photovoltaics, photoelectrochemical devices have the advantages of relatively simple manufacturing processes, economy, and a wide range of applications. The working mechanism of a photoelectrochemical device is to prepare a photoelectrode through a semiconductor material. After absorbing light, the photoelectrode excites the carriers in the semiconductor to transition from the valence band (VB) to the conduction band (CB), thereby causing The flow of carriers produces electrical energy, or the oxidation or reduction of water molecules by carriers produces chemical fuels.
然而，目前光電化學裝置之製程較為繁雜耗時，導致成本高昂，且光電轉換效能亦有待提昇，否則無法符合大規模量產的經濟效益。However, the current manufacturing process of photoelectrochemical devices is relatively complex and time-consuming, resulting in high costs, and the photoelectric conversion efficiency also needs to be improved, otherwise it will not be able to meet the economic benefits of large-scale mass production.
本發明之一目的在於提供一種光電化學裝置，可提昇光電轉換效能；本發明之另一目的在於提供一種光電化學裝置，其製程可有效簡化，以縮短製程時間並降低製造成本。One object of the present invention is to provide a photoelectrochemical device that can improve photoelectric conversion efficiency. Another object of the present invention is to provide a photoelectrochemical device whose manufacturing process can be effectively simplified to shorten the process time and reduce the manufacturing cost.
為了達成上述目的，本發明之光電化學裝置包含有一基板、一氮化鈦層以及一氮摻雜二氧化鈦層，該氮化鈦層係覆蓋於該基板，該氮摻雜二氧化鈦層係覆蓋於該氮化鈦層，該氮摻雜二氧化鈦層中的氮原子比例由下而上在2.5~4.5 at%範圍中改變。藉此，該光電化學裝置可提昇光電轉換效能，且其製程可有效簡化，以縮短製程時間並降低製造成本。In order to achieve the above object, the photoelectrochemical device of the present invention includes a substrate, a titanium nitride layer and a nitrogen-doped titanium dioxide layer. The titanium nitride layer covers the substrate, and the nitrogen-doped titanium dioxide layer covers the nitrogen titanium dioxide layer, the proportion of nitrogen atoms in the nitrogen-doped titanium dioxide layer changes from bottom to top in the range of 2.5~4.5 at%. Thereby, the photoelectrochemical device can improve the photoelectric conversion efficiency, and its manufacturing process can be effectively simplified to shorten the manufacturing time and reduce the manufacturing cost.
以下藉由三較佳實施例配合圖式，詳細說明本發明的技術內容及特徵，如圖1所示，係本發明第一較佳實施例所提供之光電化學裝置1，包含有一基板10、一氮化鈦層12以及一氮摻雜二氧化鈦層20。The following describes the technical content and features of the present invention in detail through three preferred embodiments and drawings. As shown in Figure 1, it is a photoelectrochemical device 1 provided by the first preferred embodiment of the present invention, including a substrate 10, a titanium nitride layer 12 and a nitrogen-doped titanium dioxide layer 20 .
該基板10為鈉鈣玻璃(Soda-lime glass)材質，其照光不會產生光電流，然亦可選擇其他可讓薄膜順利鍍著的材質如矽晶片、透明導電玻璃等。The substrate 10 is made of soda-lime glass, which does not produce photocurrent when illuminated. However, other materials that can allow the film to be plated smoothly can also be selected, such as silicon wafers, transparent conductive glass, etc.
該氮化鈦(TiN)層12係藉由直流非平衡磁控濺鍍 (DC unbalanced magnetron sputtering)方式沈積覆蓋於該基板10之頂面，進行濺鍍製程時，以純度99.99%鈦金屬作為濺鍍靶材，背景壓力固定於1.3 ×10 -2Pa，工作壓力維持在2.6 ×10 -1Pa，直流電源濺鍍功率350 W，基板載台施加偏壓-50 V，在400°C下，通入純度99.999%氬氣(Argon, Ar)作為工作氣體，同時通入已除塵之乾燥空氣(air)作為反應氣體，使空氣/氬氣（air/Ar）之流量比約為0.12，即可形成厚度約100 nm之該氮化鈦層12，作為傳輸光電流之導電層。惟進一步實驗顯示，air/Ar之流量比介於0.08~0.2之間亦可，然以空氣/氬氣比例介於0.1~0.15之效果較佳。 The titanium nitride (TiN) layer 12 is deposited on the top surface of the substrate 10 by DC unbalanced magnetron sputtering. During the sputtering process, titanium metal with a purity of 99.99% is used as the sputter. Coating target material, the background pressure is fixed at 1.3 × 10 -2 Pa, the working pressure is maintained at 2.6 × 10 -1 Pa, the DC power supply sputtering power is 350 W, and the substrate stage applies a bias voltage of -50 V, at 400°C. Insert 99.999% pure argon (Argon, Ar) as the working gas, and at the same time, inject dust-removed dry air (air) as the reaction gas, so that the flow ratio of air/argon (air/Ar) is approximately 0.12. The titanium nitride layer 12 with a thickness of about 100 nm is formed as a conductive layer for transmitting photocurrent. However, further experiments show that the air/Ar flow ratio is between 0.08 and 0.2, but the air/argon ratio between 0.1 and 0.15 is more effective.
該氮摻雜二氧化鈦(N-TiO 2)層20係在相同濺鍍系統中隨後沈積覆蓋於該氮化鈦層12之頂面，一切操作參數相仿，僅將空氣/氬氣之流量比階段式地調整，由1.2、1.4、1.6、1.8至2.0，使該氮摻雜二氧化鈦層20中包含有五個子層，由下而上分別為第一子層21、第二子層22、第三子層23、第四子層24與第五子層25，每一子層的厚度約20 nm，共同形成厚度約100 nm之該第一氮摻雜二氧化鈦層20，作為光吸收層，能吸收光線能量產生載子。該第一子層21至該第五子層25中的氮原子比例分別為3.6 at%、3.7 at%、3.9 at%、4.0 at%與4.2 at%，光學能隙則分別為2.9 eV、2.9 eV、2.9 eV、2.8 eV與2.8 eV。惟進一步實驗顯示，air/Ar之流量比介於0.4~3.0之間亦可，然以空氣/氬氣比例介於0.8~2.0之效果較佳。 The nitrogen-doped titanium dioxide (N-TiO 2 ) layer 20 is subsequently deposited on the top surface of the titanium nitride layer 12 in the same sputtering system. All operating parameters are similar, except that the flow ratio of air/argon gas is staged. The ground is adjusted from 1.2, 1.4, 1.6, 1.8 to 2.0, so that the nitrogen-doped titanium dioxide layer 20 contains five sub-layers, which are the first sub-layer 21, the second sub-layer 22 and the third sub-layer from bottom to top. The layer 23, the fourth sub-layer 24 and the fifth sub-layer 25, each sub-layer has a thickness of about 20 nm, together form the first nitrogen-doped titanium dioxide layer 20 with a thickness of about 100 nm, which serves as a light absorption layer and can absorb light. Energy creates carriers. The proportions of nitrogen atoms in the first sub-layer 21 to the fifth sub-layer 25 are 3.6 at%, 3.7 at%, 3.9 at%, 4.0 at% and 4.2 at% respectively, and the optical energy gaps are 2.9 eV and 2.9 respectively. eV, 2.9 eV, 2.8 eV and 2.8 eV. However, further experiments show that the air/Ar flow ratio is between 0.4 and 3.0, but the air/argon ratio between 0.8 and 2.0 is more effective.
由於該氮摻雜二氧化鈦層20具有多種不同之光學能隙，可吸收不同波長的光線並轉化成載子，故其光電轉換效能極佳。為測試該光電化學裝置1之效果，取該光電化學裝置1作為工作電極，鉑片作為對電極(counter electrode)，Ag/AgCl作為參考電極，在濃度1 M之KOH電解液中，以100瓦氙弧光源照射，使用電化學分析儀(CHI 6088D)外加偏壓-0.2 V量測光電流密度，實際量測結果為805±4 μA/cm 2，如圖3曲線a所示，相較於習知光電化學裝置，不僅可有效提昇光電轉換效能，且製程可在同一濺鍍系統中完成，於沈積該氮化鈦層12與該氮摻雜二氧化鈦層20時，僅需調整空氣/氬氣之流量比，無需使用純化的氧氣與氮氣，亦無需分次在不同的系統中進行濺鍍，更不用在高真空度下進行，可有效節省抽真空時間，如此可有效簡化製程，縮短製程時間並降低製造成本，從而達成本發明之目的。 Since the nitrogen-doped titanium dioxide layer 20 has a variety of different optical energy gaps and can absorb light of different wavelengths and convert them into carriers, its photoelectric conversion efficiency is excellent. In order to test the effect of the photoelectrochemical device 1, the photoelectrochemical device 1 was used as the working electrode, the platinum sheet was used as the counter electrode, and Ag/AgCl was used as the reference electrode. In the KOH electrolyte with a concentration of 1 M, 100 watts were used. Under xenon arc light source irradiation, an electrochemical analyzer (CHI 6088D) was used with an external bias voltage of -0.2 V to measure the photocurrent density. The actual measurement result was 805±4 μA/cm 2 , as shown in curve a in Figure 3. Compared with The conventional photoelectrochemical device can not only effectively improve the photoelectric conversion efficiency, but also the process can be completed in the same sputtering system. When depositing the titanium nitride layer 12 and the nitrogen-doped titanium dioxide layer 20, only the air/argon gas needs to be adjusted. The flow ratio eliminates the need to use purified oxygen and nitrogen, and does not require sputtering in different systems in stages, nor does it need to be performed under high vacuum, which can effectively save vacuuming time, which can effectively simplify the process and shorten the process time. And reduce the manufacturing cost, thereby achieving the purpose of the present invention.
如圖2所示，係本發明第二較佳實施例所提供之光電化學裝置2，包含有一基板10、一氮化鈦層12以及一氮摻雜二氧化鈦層20'。As shown in Figure 2, the photoelectrochemical device 2 provided by the second preferred embodiment of the present invention includes a substrate 10, a titanium nitride layer 12 and a nitrogen-doped titanium dioxide layer 20'.
該基板10與該氮化鈦層12之結構與第一實施例相同，不再贅述，所不同者，該氮摻雜二氧化鈦層20'於濺鍍時係將空氣/氬氣之流量比連續式地調整，由1.2逐漸調整至2.0，形成厚度同樣約100 nm之該氮摻雜二氧化鈦層20'，由於該氮摻雜二氧化鈦層20'相較於第一實施例具有連續分布之光學能隙，可更廣泛地吸收不同波長的光線並轉化成載子，故其光電轉換效能還可進一步提昇，如圖3曲線b所示，該光電化學裝置2之光電流密度可達837±3 μA/cm 2，較第一實施例提昇約4.0%之光電轉換效能。 The structure of the substrate 10 and the titanium nitride layer 12 is the same as that of the first embodiment and will not be described again. The difference is that the nitrogen-doped titanium dioxide layer 20' is sputtered by continuously changing the air/argon flow ratio. The ground is adjusted gradually from 1.2 to 2.0 to form the nitrogen-doped titanium dioxide layer 20' with a thickness of about 100 nm. Since the nitrogen-doped titanium dioxide layer 20' has a continuously distributed optical energy gap compared to the first embodiment, It can absorb light of different wavelengths more widely and convert it into carriers, so its photoelectric conversion efficiency can be further improved. As shown in curve b in Figure 3, the photocurrent density of the photoelectrochemical device 2 can reach 837±3 μA/cm 2. Compared with the first embodiment, the photoelectric conversion efficiency is improved by about 4.0%.
如圖4所示，係本發明第三較佳實施例所提供之光電化學裝置3，包含有一基板10、一氮化鈦層12、一氮摻雜二氧化鈦層20'以及二氮化鈦薄層30。本實施例與第二實施例大致相同，差異在於該二氮化鈦薄層30互相間隔地設於該氮摻雜二氧化鈦層20'中，該二氮化鈦薄層30之製程與該氮化鈦層12相同，只是沈積的時間較短，故厚度僅約4 nm，作為光線可穿透之導電層，讓下方之該第一氮摻雜二氧化鈦層20'仍可接受光照；由於該二氮化鈦薄層30之厚度極薄，仍可容許絕大部分的光線穿透，不致影響下方該氮摻雜二氧化鈦層20'吸收光線能量產生載子，且該氮摻雜二氧化鈦層20'照光產生之載子，僅需移動較短路徑即可經由該二氮化鈦薄層30傳導輸出，故其輸出的光電流密度甚至可較第二實施例進一步提高。As shown in Figure 4, the photoelectrochemical device 3 provided by the third preferred embodiment of the present invention includes a substrate 10, a titanium nitride layer 12, a nitrogen-doped titanium dioxide layer 20' and a titanium nitride thin layer. 30. This embodiment is substantially the same as the second embodiment. The difference is that the titanium nitride thin layers 30 are spaced apart from each other in the nitrogen-doped titanium dioxide layer 20'. The process of the titanium nitride thin layer 30 is different from that of the nitridation process. The titanium layer 12 is the same, except that the deposition time is shorter, so the thickness is only about 4 nm. As a conductive layer that can be penetrated by light, the first nitrogen-doped titanium dioxide layer 20' below can still receive light; because the dinitrogen The thickness of the titanium dioxide layer 30 is extremely thin and can still allow most of the light to penetrate without affecting the nitrogen-doped titanium dioxide layer 20' below which absorbs light energy to generate carriers, and the nitrogen-doped titanium dioxide layer 20' generates carriers when irradiated with light. The carriers only need to move a short path to be conducted and output through the titanium nitride thin layer 30, so the output photocurrent density can even be further improved compared to the second embodiment.
進一步實驗顯示，該氮化鈦薄層30之厚度只要小於10 nm即可透光，該氮化鈦薄層30的數量可依需要增減，並無限制。Further experiments show that as long as the thickness of the titanium nitride thin layer 30 is less than 10 nm, it can transmit light. The number of the titanium nitride thin layer 30 can be increased or decreased as needed, and there is no limit.
基於本發明之設計精神，該光電化學裝置還可有其他變化，例如：該氮摻雜二氧化鈦層20, 20'中的氮原子比例由下而上可在2.5~4.5 at%範圍中改變，以2.8~4.2 at%之範圍較佳，光學能隙由下而上可在2.6~3.2 eV範圍中改變，以2.8~3.0 eV範圍較佳，連續式或階段式的改變均可，數值可以由下往上漸增、漸減或無規律的改變，濺鍍製程方面，則在300°C~500°C下進行均可，該氮化鈦層12與該氮摻雜二氧化鈦層20, 20'之厚度或該第一子層21至第五子層25的厚度均可依需要調整。舉凡此等可輕易思及的結構變化，均應為本發明申請專利範圍所涵蓋。Based on the design spirit of the present invention, the photoelectrochemical device can also have other changes. For example, the proportion of nitrogen atoms in the nitrogen-doped titanium dioxide layer 20, 20' can be changed in the range of 2.5~4.5 at% from bottom to top. The range of 2.8~4.2 at% is better. The optical energy gap can be changed from bottom to top in the range of 2.6~3.2 eV. The range of 2.8~3.0 eV is better. It can be changed continuously or stepwise. The value can be changed from the following Increasing, decreasing or irregular changes upward, the sputtering process can be carried out at 300°C~500°C, the thickness of the titanium nitride layer 12 and the nitrogen-doped titanium dioxide layer 20, 20' Or the thickness of the first sub-layer 21 to the fifth sub-layer 25 can be adjusted as needed. All such structural changes that can be easily imagined should be covered by the patent application scope of this invention.
1, 2, 3:光電化學裝置 10:基板 12:氮化鈦層 20, 20':氮摻雜二氧化鈦層 21:第一子層 22:第二子層 23:第三子層 24:第四子層 25:第五子層 30:氮化鈦薄層 1, 2, 3: Photoelectrochemical device 10:Substrate 12:Titanium nitride layer 20, 20': Nitrogen-doped titanium dioxide layer 21: First sub-layer 22: Second sub-layer 23: The third sub-layer 24:The fourth sub-layer 25:The fifth sub-layer 30:Titanium nitride thin layer
圖1為本發明第一較佳實施例之光電化學裝置之剖視圖； 圖2為本發明第二較佳實施例之光電化學裝置之剖視圖； 圖3為本發明第一、第二較佳實施例之光電化學裝置之光電流密度測試結果； 圖4為本發明第三較佳實施例之光電化學裝置之剖視圖。 Figure 1 is a cross-sectional view of the photoelectrochemical device according to the first preferred embodiment of the present invention; Figure 2 is a cross-sectional view of the photoelectrochemical device according to the second preferred embodiment of the present invention; Figure 3 shows the photocurrent density test results of the photoelectrochemical device according to the first and second preferred embodiments of the present invention; Figure 4 is a cross-sectional view of the photoelectrochemical device according to the third preferred embodiment of the present invention.
1:光電化學裝置 1: Photoelectrochemical device
10:基板 10:Substrate
12:氮化鈦層 12:Titanium nitride layer
20:氮摻雜二氧化鈦層 20: Nitrogen-doped titanium dioxide layer
21:第一子層 21: First sub-layer
22:第二子層 22: Second sub-layer
23:第三子層 23: The third sub-layer
24:第四子層 24:The fourth sub-layer
25:第五子層 25:The fifth sub-layer
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Citations (5)
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|---|---|---|---|---|
| CN101157021A (en) * | 2007-11-01 | 2008-04-09 | 复旦大学 | A preparation method of visible light active nitrogen doping nanometer titania film |
| TW201102451A (en) * | 2009-07-01 | 2011-01-16 | Univ Nat Chunghsing | Method for preparing nitrogen-doped titanium dioxide |
| CN102254697A (en) * | 2011-04-25 | 2011-11-23 | 宁波大学 | Titanium dioxide light anode, and preparation method and use thereof |
| CN105671486A (en) * | 2016-03-25 | 2016-06-15 | 大连交通大学 | Preparation method of nitrogen-doped titanium dioxide film materials |
| CN109289890A (en) * | 2018-09-28 | 2019-02-01 | 西北工业大学 | Efficient self-supporting titanium nitride/nitrogen-doped titanium dioxide light electro catalytic electrode material and preparation method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101157021A (en) * | 2007-11-01 | 2008-04-09 | 复旦大学 | A preparation method of visible light active nitrogen doping nanometer titania film |
| TW201102451A (en) * | 2009-07-01 | 2011-01-16 | Univ Nat Chunghsing | Method for preparing nitrogen-doped titanium dioxide |
| CN102254697A (en) * | 2011-04-25 | 2011-11-23 | 宁波大学 | Titanium dioxide light anode, and preparation method and use thereof |
| CN105671486A (en) * | 2016-03-25 | 2016-06-15 | 大连交通大学 | Preparation method of nitrogen-doped titanium dioxide film materials |
| CN109289890A (en) * | 2018-09-28 | 2019-02-01 | 西北工业大学 | Efficient self-supporting titanium nitride/nitrogen-doped titanium dioxide light electro catalytic electrode material and preparation method |
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