TWI813493B - Display device - Google Patents
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- TWI813493B TWI813493B TW111142288A TW111142288A TWI813493B TW I813493 B TWI813493 B TW I813493B TW 111142288 A TW111142288 A TW 111142288A TW 111142288 A TW111142288 A TW 111142288A TW I813493 B TWI813493 B TW I813493B
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- 239000000758 substrate Substances 0.000 claims abstract description 55
- 238000006243 chemical reaction Methods 0.000 claims description 22
- 239000012788 optical film Substances 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 230000000295 complement effect Effects 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 48
- 239000000463 material Substances 0.000 description 21
- 239000002245 particle Substances 0.000 description 9
- 239000000725 suspension Substances 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000005339 levitation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
本發明是有關於一種顯示裝置,且特別是有關於一種反射式顯示裝置。The present invention relates to a display device, and in particular to a reflective display device.
電泳顯示器以其節能環保的優勢而受到市場關注,其利用環境光的反射或吸收而產生亮態或暗態,以達成顯示之目的,因此完全不需額外設置光源。一般而言,電泳顯示器的電泳顯示薄膜(EPD film)主要是由電泳液以及懸浮於電泳液中的帶電粒子所構成,其透過施加電壓的方式驅動帶電粒子移動,藉以切換各子畫素的暗態與亮態。然而,隨著電泳顯示器的使用時間增長,電泳液中的帶電粒子可能會發生粒子間凝聚、擴散不均勻、或黏附構件表面等情況,導致電泳顯示器的顯示品質或可靠度(reliability)不佳。Electrophoretic displays have attracted market attention because of their energy-saving and environmentally friendly advantages. They use the reflection or absorption of ambient light to produce bright or dark states to achieve display purposes, so there is no need to set up an additional light source. Generally speaking, the electrophoretic display film (EPD film) of an electrophoretic display is mainly composed of an electrophoretic liquid and charged particles suspended in the electrophoretic liquid. It drives the charged particles to move by applying a voltage, thereby switching the darkness of each sub-pixel. State and bright state. However, as the use time of the electrophoretic display increases, the charged particles in the electrophoretic solution may agglomerate between particles, spread unevenly, or adhere to the surface of the component, resulting in poor display quality or reliability of the electrophoretic display.
本發明提供一種顯示裝置,具有提高的可靠度。The present invention provides a display device with improved reliability.
本發明的一個實施例提出一種顯示裝置,包括:基板;透光蓋板,疊置於基板上;透光電極,位於透光蓋板與基板之間;暗色溶液,位於透光電極與基板之間;以及多個多孔電極,位於基板上及暗色溶液中。One embodiment of the present invention provides a display device, including: a substrate; a light-transmitting cover plate stacked on the substrate; a light-transmitting electrode located between the light-transmitting cover plate and the substrate; and a dark solution located between the light-transmitting electrode and the substrate between; and multiple porous electrodes located on the substrate and in the dark solution.
在本發明的一實施例中,上述的基板包括多個主動元件。In an embodiment of the present invention, the above-mentioned substrate includes a plurality of active components.
在本發明的一實施例中,上述的多個多孔電極分別電性連接所述多個主動元件。In an embodiment of the present invention, the plurality of porous electrodes are electrically connected to the plurality of active components respectively.
在本發明的一實施例中,上述的多孔電極具延展性。In an embodiment of the present invention, the above-mentioned porous electrode is ductile.
在本發明的一實施例中,上述的多孔電極的材質包括銀或鋁。In an embodiment of the present invention, the porous electrode is made of silver or aluminum.
在本發明的一實施例中,上述的多孔電極的厚度介於0.5 μm至2 μm之間。In an embodiment of the present invention, the thickness of the porous electrode is between 0.5 μm and 2 μm.
在本發明的一實施例中,上述的多孔電極的孔呈規則排列。In an embodiment of the present invention, the holes of the above-mentioned porous electrode are arranged regularly.
在本發明的一實施例中,上述的顯示裝置還包括介電層,位於透光電極與暗色溶液之間。In an embodiment of the present invention, the above-mentioned display device further includes a dielectric layer located between the light-transmitting electrode and the dark solution.
在本發明的一實施例中,上述的顯示裝置還包括光學膜,其中透光電極位於光學膜與暗色溶液之間。In an embodiment of the present invention, the above-mentioned display device further includes an optical film, wherein the light-transmitting electrode is located between the optical film and the dark solution.
在本發明的一實施例中,上述的光學膜包括表面微結構,且透光電極位於表面微結構的表面上。In an embodiment of the present invention, the above-mentioned optical film includes a surface microstructure, and the light-transmitting electrode is located on the surface of the surface microstructure.
在本發明的一實施例中,上述的多孔電極與透光電極的表面輪廓形狀互補。In an embodiment of the present invention, the surface contour shapes of the above-mentioned porous electrode and the light-transmitting electrode are complementary.
在本發明的一實施例中,上述的顯示裝置還包括色轉換層,且色轉換層位於透光蓋板與透光電極之間。In an embodiment of the present invention, the above-mentioned display device further includes a color conversion layer, and the color conversion layer is located between the light-transmitting cover plate and the light-transmitting electrode.
在本發明的一實施例中,上述的色轉換層包括多個彩色濾光結構,且彩色濾光結構於基板的正投影重疊多孔電極於基板的正投影。In one embodiment of the present invention, the above-mentioned color conversion layer includes a plurality of color filter structures, and the orthographic projection of the color filter structure on the substrate overlaps the orthographic projection of the porous electrode on the substrate.
在本發明的一實施例中,上述的色轉換層還包括多個遮光結構,遮光結構位於彩色濾光結構之間,且重疊多孔電極連接基板之處。In an embodiment of the present invention, the above-mentioned color conversion layer further includes a plurality of light-shielding structures. The light-shielding structures are located between the color filter structures and overlap the porous electrodes connected to the substrate.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more obvious and easy to understand, embodiments are given below and described in detail with reference to the accompanying drawings.
圖1A是依照本發明一實施例的顯示裝置10的上視示意圖。圖1B是沿圖1A的剖面線A-A’所作的剖面示意圖,顯示顯示裝置10的子畫素PX1處於暗態。圖1C是顯示裝置10的子畫素PX1處於亮態的剖面示意圖。為了使圖式的表達較為簡潔,圖1A示意性繪示基板110以及多孔電極140,並省略其他構件。FIG. 1A is a schematic top view of a
請參照圖1A至圖1C,顯示裝置10包括:基板110;透光蓋板160,疊置於基板110上;透光電極120,位於透光蓋板160與基板110之間;暗色溶液130,位於透光電極120與基板110之間;以及多個多孔電極140,位於基板110上及暗色溶液130中。Referring to FIGS. 1A to 1C , the
在本發明的一實施例的顯示裝置10中,藉由透光電極120與多孔電極140之間的貼合或分離來切換各子畫素的亮態與暗態,且暗色溶液130即可呈現暗態而不需使用帶電粒子,因此可排除使用帶電粒子所導致的粒子間凝聚、擴散不均勻、或黏附等問題,從而提高顯示裝置10的可靠度。以下,配合圖1A至圖1C,繼續說明顯示裝置10的各個元件的實施方式,但本發明不以此為限。In the
請同時參照圖1A及圖1B,顯示裝置10包括多個子畫素PXs,且多個子畫素PXs可以呈陣列排列於基板110上,但不以此為限。在一些實施例中,子畫素PXs可以其他規則的方式或不規則的方式排列於基板110上。Please refer to FIG. 1A and FIG. 1B simultaneously. The
各子畫素PXs可以包括透光電極120、暗色溶液130以及多孔電極140。在本實施例中,顯示裝置10還可以包括驅動元件DC,且驅動元件DC可以電性連接子畫素PXs,以傳遞訊號至透光電極120以及多孔電極140,或對透光電極120以及多孔電極140施加電壓。在一些實施例中,驅動元件DC可為接合至電路基板110的晶片或直接形成於電路基板110中的電路元件(包含主動元件、被動元件或其組合)。Each sub-pixel PXs may include a light-transmitting electrode 120, a dark solution 130, and a
在本實施例中,基板110可以是主動元件陣列基板,但不限於此。舉例而言,請參照圖1B,基板110可以包括底板111及設置於底板111上的多個主動元件112。底板111可以是透明基板或非透明基板,其材質例如可以是石英基板、玻璃基板、高分子基板或其他適當材質。底板111上可以承載顯示裝置10需要的元件或線路,例如驅動元件、開關元件、儲存電容、電源線、驅動訊號線、時序訊號線、電流補償線、檢測訊號線等等。In this embodiment, the
多個主動元件112可以排列成陣列,且各個主動元件112分別與各子畫素PXs的多孔電極140電性連接。如圖1B所示,主動元件112包括閘極112G、通道層112C、閘絕緣層GI、源極112S以及汲極112D,其中閘絕緣層GI配置於閘極112G與通道層112C之間,源極112S與汲極112D分別與通道層112C接觸,閘極112G及源極112S例如可以分別接收來自驅動元件DC的訊號,且汲極112D可以通過平坦層PL的通孔VA中的導電結構CS電性連接多孔電極140。Multiple active devices 112 may be arranged in an array, and each active device 112 is electrically connected to the
通道層112C的材質可包括矽質半導體材料(例如多晶矽、非晶矽等)、氧化物半導體材料、有機半導體材料。閘極112G、源極112S與汲極112D的材質可包括導電性良好的金屬,例如鋁、鉬、鈦、銅等金屬,但本發明不限於此。閘絕緣層GI的材質可以包括透明的絕緣材料,例如氧化矽、氮化矽、氮氧化矽或上述材料的疊層,但本發明不限於此。平坦層PL的材質例如可以包括透明的絕緣材料,例如有機材料、壓克力(acrylic)材料、矽氧烷(siloxane)材料、聚醯亞胺(polyimide)材料、環氧樹脂(epoxy)材料等,但本發明不限於此。閘絕緣層GI以及平坦層PL也可以分別具有單層結構或多層結構,多層結構例如上述材料中任意兩層或更多層的疊層,可視需要進行組合與變化。The material of the channel layer 112C may include silicon semiconductor materials (such as polycrystalline silicon, amorphous silicon, etc.), oxide semiconductor materials, and organic semiconductor materials. The materials of the gate 112G, the source 112S and the drain 112D may include metals with good conductivity, such as aluminum, molybdenum, titanium, copper and other metals, but the invention is not limited thereto. The material of the gate insulating layer GI may include transparent insulating materials, such as silicon oxide, silicon nitride, silicon oxynitride, or a stack of the above materials, but the invention is not limited thereto. The material of the flat layer PL may include, for example, transparent insulating materials, such as organic materials, acrylic materials, siloxane materials, polyimide materials, epoxy materials, etc. , but the present invention is not limited to this. The gate insulating layer GI and the flat layer PL can also have a single-layer structure or a multi-layer structure respectively. The multi-layer structure, such as a stack of two or more layers of any of the above materials, can be combined and changed as needed.
各個子畫素PXs的透光電極120可彼此電性相連,或者,透光電極120可在操作時被施加相同的共用電壓。舉例而言,在本實施例中,各個子畫素PXs的透光電極120可彼此實體連接而接收相同的電壓。在一些實施例中,各個子畫素PXs的透光電極120可彼此實體分離但電性相連,以接收相同的電壓。然而,在某些實施例中,透光電極120可彼此電性分離而接收相同或不同的電壓。透光電極120為透明導電層,例如透光電極120的材質可以包括諸如鋅氧化物、銦鋅氧化物(IZO)、銦錫氧化物(ITO)或銦鎵鋅氧化物(IGZO)的金屬氧化物、導電高分子、奈米碳管、石墨烯或金屬奈米線等透明導電材料。The light-transmitting electrodes 120 of each sub-pixel PXs may be electrically connected to each other, or the light-transmitting electrodes 120 may be applied with the same common voltage during operation. For example, in this embodiment, the light-transmitting electrodes 120 of each sub-pixel PXs may be physically connected to each other and receive the same voltage. In some embodiments, the light-transmitting electrodes 120 of each sub-pixel PXs may be physically separated from each other but electrically connected to receive the same voltage. However, in some embodiments, the light-transmissive electrodes 120 may be electrically separated from each other and receive the same or different voltages. The light-transmitting electrode 120 is a transparent conductive layer. For example, the material of the light-transmitting electrode 120 may include metal oxide such as zinc oxide, indium zinc oxide (IZO), indium tin oxide (ITO) or indium gallium zinc oxide (IGZO). materials, conductive polymers, carbon nanotubes, graphene or metal nanowires and other transparent conductive materials.
各個子畫素PXs的多孔電極140可以彼此分離,而獨立地接收由驅動元件DC提供的訊號。舉例而言,在本實施例中,多孔電極140可以包括固定部141、142及懸浮部143,固定部141、142位於多孔電極140的兩端,且懸浮部143位於固定部141、142之間。多孔電極140可以藉由固定部142電性連接主動元件112,如此一來,驅動元件DC可以利用主動元件112來控制多孔電極140的電壓。The
暗色溶液130可以是使顯示裝置10的子畫素PXs呈現暗態的溶液,且各子畫素PXs中的暗色溶液130可以相互流通或隔離。舉例而言,在本實施例中,透光蓋板160與基板110相對,且暗色溶液130可以是分布於整個基板110與透光蓋板160之間的黑色墨水。另外,透光蓋板160與基板110的周邊還可藉由密封膠密封,以防止暗色溶液130流出。在一些實施例中,透光蓋板160的透光率較佳不小於50%,例如透光蓋板160的透光率可以是60%以上,但不以此為限。The dark solution 130 may be a solution that causes the sub-pixels PXs of the
多孔電極140的懸浮部143可以具有延展性,使得其能夠在承受拉伸應力(tensile stress)或壓縮應力(compressive stress)之下產生形變而貼合透光電極120或遠離透光電極120。如此一來,可以藉由控制透光電極120與多孔電極140的電壓來使多孔電極140的懸浮部143遠離或貼合透光電極120。The suspended portion 143 of the
舉例而言,請參照圖1B,當對透光電極120與多孔電極140施加例如電性相同的電壓時,透光電極120與多孔電極140會相互排斥,使得多孔電極140的懸浮部143遠離透光電極120。在此狀態下,暗色溶液130分布於透光電極120與多孔電極140的懸浮部143之間的空間,使得從顯示裝置10外部進入顯示裝置10的環境光先穿透透光電極120,然後被暗色溶液130吸收,因此子畫素PX1呈現暗色,也就是說,此時子畫素PX1處於暗態。For example, referring to FIG. 1B , when a voltage with the same electrical properties is applied to the light-transmitting electrode 120 and the
請參照圖1C,當對透光電極120與多孔電極140施加例如電性相反的電壓時,透光電極120與多孔電極140會相互吸引,使得多孔電極140的懸浮部143貼合於透光電極120。在此狀態下,透光電極120與多孔電極140之間幾乎無暗色溶液130存在,或僅存在極少量的暗色溶液130,使得從顯示裝置10外部進入顯示裝置10的環境光可穿透透光電極120,然後被多孔電極140的懸浮部143反射,此時子畫素PX1便處於亮態。Referring to FIG. 1C , when electrically opposite voltages, for example, are applied to the light-transmitting electrode 120 and the
在本實施例中,多孔電極140的懸浮部143可以是延展性良好且具有高反射率的導電薄膜,其材質可以包括銀(Ag)、鋁(Al)、其合金或其他適當的材料。懸浮部143可以具有薄的厚度,舉例而言,懸浮部143的厚度可以介於0.5 μm至2 μm之間,例如0.6 μm、1 μm或1.5 μm,以利懸浮部143在遠離或貼合透光電極120的過程中進行形變。另外,多孔電極140的固定部141、142只要可以將懸浮部143固定或電性連接至基板110即可,其可具有或不具有延展性或高反射率。因此,固定部141、142與懸浮部143的材質可以相同或不同。In this embodiment, the suspended portion 143 of the
在多孔電極140的懸浮部143貼合於透光電極120的過程中,透光電極120與多孔電極140的懸浮部143之間的暗色溶液130會被驅離。為了便於暗色溶液130流出,多孔電極140的懸浮部143可以具有多個孔,且懸浮部143的多個孔可以呈規則排列,但不以此為限。在一些實施例中,懸浮部143的多個孔可以呈不規則排列。此外,懸浮部143的孔的形狀並無特殊限制,且可以具有規則形狀或不規則形狀。When the suspended portion 143 of the
舉例而言,請參照圖2A,圖2A是依照本發明一實施例的多孔電極140A的懸浮部143A的上視示意圖。在本實施例中,懸浮部143A可以具有呈矩陣排列的多個圓形開孔O1。For example, please refer to FIG. 2A , which is a schematic top view of the suspended portion 143A of the porous electrode 140A according to an embodiment of the present invention. In this embodiment, the suspended part 143A may have a plurality of circular openings O1 arranged in a matrix.
圖2B是依照本發明一實施例的多孔電極140B的懸浮部143B的上視示意圖。請參照圖2B,在本實施例中,懸浮部143B可以具有呈矩陣排列的多個方形開孔O2。FIG. 2B is a schematic top view of the suspended portion 143B of the porous electrode 140B according to an embodiment of the present invention. Referring to FIG. 2B , in this embodiment, the suspended part 143B may have a plurality of square openings O2 arranged in a matrix.
圖2C是依照本發明一實施例的多孔電極140C的懸浮部143C的上視示意圖。請參照圖2C,在本實施例中,懸浮部143C可以具有呈矩陣排列的多個星形開孔O3。FIG. 2C is a schematic top view of the suspended portion 143C of the porous electrode 140C according to an embodiment of the present invention. Please refer to FIG. 2C . In this embodiment, the floating part 143C may have a plurality of star-shaped openings O3 arranged in a matrix.
圖2D是依照本發明一實施例的多孔電極140D的懸浮部143D的上視示意圖。請參照圖2D,在本實施例中,懸浮部143D可以具有呈矩陣排列的多個圓形開孔O4,且相鄰行或列的開孔O4彼此錯開。FIG. 2D is a schematic top view of the suspended portion 143D of the porous electrode 140D according to an embodiment of the present invention. Please refer to FIG. 2D . In this embodiment, the suspended portion 143D may have a plurality of circular openings O4 arranged in a matrix, and the openings O4 in adjacent rows or columns are staggered from each other.
請參照圖1B,在本實施例中,顯示裝置10還可以包括介電層IL1,介電層IL1位於透光電極120與暗色溶液130之間,且介電層IL1可以覆蓋透光電極120的表面,以防止暗色溶液130或是暗色溶液130中的雜質(例如染料)侵蝕或附著於透光電極120。另外,介電層IL1的厚度應盡可能地薄,以免在對透光電極120與多孔電極140施加相反電壓以使多孔電極140的懸浮部143貼合於透光電極120時減弱透光電極120對懸浮部143的靜電吸引力。Please refer to FIG. 1B . In this embodiment, the
在本實施例中,顯示裝置10還可以視需要包括色轉換層150,色轉換層150可以設置於透光蓋板160與透光電極120之間,且透光電極120與色轉換層150之間還可以設置絕緣層IL2,以避免不必要的電性連接。In this embodiment, the
舉例而言,色轉換層150可以包括多個彩色濾光結構151以及多個遮光結構152,且彩色濾光結構151於基板110的正投影可重疊多孔電極140於基板110的正投影。遮光結構152可用來定義彩色濾光結構151的形成位置,例如遮光結構152可具有開口,且彩色濾光結構151可位於遮光結構152的開口中。換句話說,遮光結構152可以位於彩色濾光結構151之間,以提高色彩對比度。另外,遮光結構152還可以分別重疊多孔電極140連接基板110之處,例如,遮光結構152可以分別重疊多孔電極140的固定部141或固定部142,以避免多孔電極140的固定部141、142反射的光線影響顯示裝置10的顯示效果。For example, the color conversion layer 150 may include a plurality of color filter structures 151 and a plurality of light shielding structures 152, and the orthographic projection of the color filter structures 151 on the
彩色濾光結構151可以是紅色濾光結構、綠色濾光結構或藍色濾光結構,以使通過彩色濾光結構151的光線能具有相應的顏色。在一些實施例中,彩色濾光結構151可以包括螢光粉、量子點或類似性質的波長轉換材料。如此一來,當子畫素PXs處於亮態時,經多孔電極140的懸浮部143反射的光線可被色轉換層150轉換成不同色彩的光線,使得顯示裝置10能夠提供全彩化的顯示效果。The color filter structure 151 can be a red filter structure, a green filter structure or a blue filter structure, so that the light passing through the color filter structure 151 can have a corresponding color. In some embodiments, the color filter structure 151 may include phosphors, quantum dots, or similar wavelength conversion materials. In this way, when the sub-pixels PXs are in the bright state, the light reflected by the suspended portion 143 of the
圖3A是依照本發明一實施例的顯示裝置30的子畫素處於暗態的剖面示意圖。圖3B是顯示裝置30的子畫素處於亮態的剖面示意圖。顯示裝置30包括疊置的基板110及透光蓋板160、位於基板110上的多個子畫素、以及位於多個子畫素與透光蓋板160之間的色轉換層150,且各子畫素可以包括透光電極120A、暗色溶液130以及多孔電極140。與如圖1B所示的顯示裝置10相比,圖3A所示的顯示裝置30的不同之處在於:顯示裝置30還包括光學膜OP1,光學膜OP1可以位於透光電極120A與色轉換層150之間,且透光電極120A可以位於光學膜OP1與暗色溶液130之間。FIG. 3A is a schematic cross-sectional view of the sub-pixels of the display device 30 in a dark state according to an embodiment of the present invention. FIG. 3B is a schematic cross-sectional view of the sub-pixels of the display device 30 in a bright state. The display device 30 includes a stacked
請參照圖3A,在本實施例中,光學膜OP1可以包括形成於其表面上的表面微結構ML,表面微結構ML例如是具有半圓形表面輪廓的微透鏡結構,且透光電極120A可以設置於表面微結構ML的表面上而具有與表面微結構ML相同的半圓形表面輪廓。當多孔電極140的懸浮部143遠離透光電極120A而使暗色溶液130存在於透光電極120A與多孔電極140的懸浮部143之間時,暗色溶液130可以破壞環境光於表面微結構ML的界面全反射,使得環境光可被暗色溶液130吸收,進而使顯示裝置30的子畫素處於暗態。Please refer to FIG. 3A. In this embodiment, the optical film OP1 may include a surface microstructure ML formed on its surface. The surface microstructure ML may be, for example, a microlens structure with a semicircular surface profile, and the light-transmitting electrode 120A may It is disposed on the surface of the surface microstructure ML and has the same semicircular surface profile as the surface microstructure ML. When the suspended part 143 of the
另外,請參照圖3B,當多孔電極140與透光電極120A之間相互吸引時,多孔電極140的懸浮部143可形變而貼合於透光電極120A的表面,使得懸浮部143也具有與透光電極120A相同的半圓形表面輪廓。在此情況下,進入顯示裝置30的環境光可於表面微結構ML與懸浮部143的界面發生全反射,或者是被懸浮部143反射,因而使顯示裝置30的子畫素處於亮態。此外,表面微結構ML的半圓形表面還可使反射光產生散射,使得顯示裝置30能夠提供非鏡面的顯示效果。In addition, please refer to FIG. 3B . When the
圖4A是依照本發明一實施例的顯示裝置40的子畫素處於暗態的剖面示意圖。圖4B是顯示裝置40的子畫素處於亮態的剖面示意圖。顯示裝置40包括疊置的基板110A及透光蓋板160、位於基板110A上的多個子畫素、位於多個子畫素與透光蓋板160之間的色轉換層150、以及位於多個子畫素與色轉換層150之間的光學膜OP2,且各子畫素可以包括透光電極120B、暗色溶液130以及多孔電極140E。與如圖3A所示的顯示裝置30相比,圖4A所示的顯示裝置40的不同之處在於:光學膜OP2的表面微結構ML完全重疊色轉換層150的彩色濾光結構151、但未完全重疊遮光結構152;透光電極120B僅設置於表面微結構ML的表面而彼此實體分離;以及顯示裝置40的多孔電極140E的懸浮部143E與透光電極120B的表面輪廓形狀互補。FIG. 4A is a schematic cross-sectional view of the sub-pixels of the display device 40 in a dark state according to an embodiment of the present invention. FIG. 4B is a schematic cross-sectional view of the sub-pixels of the display device 40 in a bright state. The display device 40 includes a stacked substrate 110A and a light-transmitting cover 160 , a plurality of sub-pixels located on the substrate 110A, a color conversion layer 150 located between the multiple sub-pixels and the light-transmitting cover 160 , and a plurality of sub-pixels located on the substrate 110A. The optical film OP2 between the pixel and the color conversion layer 150 is provided, and each sub-pixel may include a light-transmitting electrode 120B, a dark solution 130 and a porous electrode 140E. Compared with the display device 30 shown in FIG. 3A , the difference of the display device 40 shown in FIG. 4A is that the surface microstructure ML of the optical film OP2 completely overlaps the color filter structure 151 of the color conversion layer 150 , but does not The light-shielding structure 152 is completely overlapped; the light-transmitting electrode 120B is only disposed on the surface of the surface microstructure ML and is physically separated from each other; and the suspended portion 143E of the porous electrode 140E of the display device 40 is complementary to the surface profile shape of the light-transmitting electrode 120B.
舉例而言,請參照圖4A,在本實施例中,由於透光電極120B具有向下凸出的表面形狀,多孔電極140E的懸浮部143E可以具有向下凹入的表面形狀。如此一來,請參照圖4B,當多孔電極140E的懸浮部143E與透光電極120B之間相互吸引時,多孔電極140E的懸浮部143E可更容易貼合於透光電極120B的表面。For example, please refer to FIG. 4A . In this embodiment, since the light-transmitting electrode 120B has a downwardly convex surface shape, the suspended portion 143E of the porous electrode 140E may have a downwardly concave surface shape. In this way, please refer to FIG. 4B , when the floating portion 143E of the porous electrode 140E and the light-transmitting electrode 120B are attracted to each other, the floating portion 143E of the porous electrode 140E can be more easily attached to the surface of the light-transmitting electrode 120B.
另外,各子畫素的透光電極120B可以彼此實體分離且電性分離,因此,透光電極120B可在操作時被分別施加不同的電壓。同時,各子畫素的多孔電極140E可在操作時被施加相同的電壓,或者,各子畫素的多孔電極140E可以電性連接至同一電壓源,或者,多孔電極140E可以彼此電性連接。舉例而言,在本實施例中,多孔電極140E可以通過基板110A上的走線電性連接至基板110A上的共用電極線而具有相同的電壓。如此一來,也能夠藉由控制透光電極120B的電壓來控制透光電極120B與多孔電極140E之間的吸引或排斥,從而控制顯示裝置40的子畫素的暗態與亮態之間的切換。In addition, the light-transmitting electrodes 120B of each sub-pixel can be physically and electrically separated from each other. Therefore, different voltages can be applied to the light-transmitting electrodes 120B during operation. At the same time, the porous electrodes 140E of each sub-pixel can be applied with the same voltage during operation, or the porous electrodes 140E of each sub-pixel can be electrically connected to the same voltage source, or the porous electrodes 140E can be electrically connected to each other. For example, in this embodiment, the porous electrode 140E can be electrically connected to the common electrode line on the substrate 110A through the traces on the substrate 110A and have the same voltage. In this way, the attraction or repulsion between the light-transmitting electrode 120B and the porous electrode 140E can also be controlled by controlling the voltage of the light-transmitting electrode 120B, thereby controlling the relationship between the dark state and the bright state of the sub-pixels of the display device 40. switch.
綜上所述,本發明的顯示裝置藉由控制透光電極及/或多孔電極的相對電壓來控制透光電極與多孔電極之間的貼合或分離,以切換各子畫素的亮態與暗態,且暗色溶液中不需存在帶電粒子,因此能夠排除使用帶電粒子所導致的問題,從而提高顯示裝置的可靠度。To sum up, the display device of the present invention controls the attachment or separation between the light-transmitting electrode and the porous electrode by controlling the relative voltage of the light-transmitting electrode and/or the porous electrode, so as to switch the bright state and the bright state of each sub-pixel. Dark state, and there is no need for charged particles in the dark solution, so problems caused by the use of charged particles can be eliminated, thereby improving the reliability of the display device.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed above through embodiments, they are not intended to limit the present invention. Anyone with ordinary knowledge in the technical field may make some modifications and modifications without departing from the spirit and scope of the present invention. Therefore, The protection scope of the present invention shall be determined by the appended patent application scope.
10、30、40:顯示裝置
110、110A:基板
111:底板
112:主動元件
112C:通道層
112D:汲極
112G:閘極
112S:源極
120、120A、120B:透光電極
130:暗色溶液
140、140A、140B、140C、140D、140E:多孔電極
141、142:固定部
143、143A、143B、143C、143D、143E:懸浮部
150:色轉換層
151:彩色濾光結構
152:遮光結構
160:透光蓋板
A-A’:剖面線
CS:導電結構
DC:驅動元件
GI:閘絕緣層
IL1:介電層
IL2:絕緣層
ML:表面微結構
O1、O2、O3、O4:開孔
OP1、OP2:光學膜
PL:平坦層
PX1、PXs:子畫素
VA:通孔
10, 30, 40:
圖1A是依照本發明一實施例的顯示裝置10的上視示意圖。
圖1B是沿圖1A的剖面線A-A’所作的剖面示意圖,顯示顯示裝置10的子畫素PX1處於暗態。
圖1C是顯示裝置10的子畫素PX1處於亮態的剖面示意圖。
圖2A是依照本發明一實施例的多孔電極140A的懸浮部143A的上視示意圖。
圖2B是依照本發明一實施例的多孔電極140B的懸浮部143B的上視示意圖。
圖2C是依照本發明一實施例的多孔電極140C的懸浮部143C的上視示意圖。
圖2D是依照本發明一實施例的多孔電極140D的懸浮部143D的上視示意圖。
圖3A是依照本發明一實施例的顯示裝置30的子畫素處於暗態的剖面示意圖。
圖3B是顯示裝置30的子畫素處於亮態的剖面示意圖。
圖4A是依照本發明一實施例的顯示裝置40的子畫素處於暗態的剖面示意圖。
圖4B是顯示裝置40的子畫素處於亮態的剖面示意圖。
FIG. 1A is a schematic top view of a
10:顯示裝置 10:Display device
110:基板 110:Substrate
111:底板 111: Bottom plate
112:主動元件 112:Active components
112C:通道層 112C: Channel layer
112D:汲極 112D: drain
112G:閘極 112G: Gate
112S:源極 112S: Source
120:透光電極 120: Translucent electrode
130:暗色溶液 130:Dark solution
140:多孔電極 140:Porous electrode
141、142:固定部 141, 142: Fixed part
143:懸浮部 143: Levitation Department
150:色轉換層 150: Color conversion layer
151:彩色濾光結構 151: Color filter structure
152:遮光結構 152:Light-shielding structure
160:透光蓋板 160: Translucent cover
CS:導電結構 CS: conductive structure
GI:閘絕緣層 GI: Gate insulation layer
IL1:介電層 IL1: dielectric layer
IL2:絕緣層 IL2: Insulating layer
PL:平坦層 PL: flat layer
VA:通孔 VA: through hole
Claims (11)
Priority Applications (1)
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US20020000959A1 (en) * | 1998-10-08 | 2002-01-03 | International Business Machines Corporation | Micromechanical displays and fabrication method |
TW200804348A (en) * | 2005-11-14 | 2008-01-16 | Vertex Pharma | Quinazolines useful as modulators of voltage gated ion channels |
CN101111800A (en) * | 2005-07-29 | 2008-01-23 | 大日本印刷株式会社 | Display device, its manufacturing method, and display medium |
TW200839388A (en) * | 2006-12-20 | 2008-10-01 | Sony Corp | Display device and method of manufacturing the same |
CN101432227A (en) * | 2004-06-23 | 2009-05-13 | 海珀里昂催化国际有限公司 | Functionalized single walled carbon nanotubes |
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US20020000959A1 (en) * | 1998-10-08 | 2002-01-03 | International Business Machines Corporation | Micromechanical displays and fabrication method |
CN101432227A (en) * | 2004-06-23 | 2009-05-13 | 海珀里昂催化国际有限公司 | Functionalized single walled carbon nanotubes |
CN101111800A (en) * | 2005-07-29 | 2008-01-23 | 大日本印刷株式会社 | Display device, its manufacturing method, and display medium |
TW200804348A (en) * | 2005-11-14 | 2008-01-16 | Vertex Pharma | Quinazolines useful as modulators of voltage gated ion channels |
TW200839388A (en) * | 2006-12-20 | 2008-10-01 | Sony Corp | Display device and method of manufacturing the same |
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