TWI813281B - Bearing structure for high-low-voltage conversion circuit - Google Patents

Abstract

The present invention provides a bearing structure for a high-low-voltage conversion circuit. The bearing structure includes an insulation carrier, a first conductive layer, a second conductive layer, a first trench and a first insulation material. The insulation carrier has a first surface and a second surface opposite to each other. The first conductive layer and the second conductive layer are coated on the first surface and the second surface, respectively. A voltage difference is formed between the first conductive layer and the second conductive layer. The first trench is disposed on the first surface and surrounds an outer periphery of the first conductive layer. The first conductive layer is extended from the first surface into the first trench, and the outer periphery of the first conductive layer is located at a bottom of the first trench. The first insulation material covers the outer periphery of the first conductor layer and is filled in the first trench.

Description

Carrying structure of high and low voltage conversion circuit

This case is about a load-bearing structure, especially a load-bearing structure of a high-low voltage conversion circuit, to avoid tip partial discharges at the outer periphery of a conductor due to high electric field intensity.

With the development of the economy, the demand for electricity has increased dramatically, and the safety requirements for electricity have become higher and higher. Taking the common application of medium-voltage solid-state transformers as an example, multiple power conversion modules are constructed in a single system cabinet, and each power conversion module needs to be carried on an isolation carrier to be integrated into the system cabinet. Since this type of power conversion module contains a high-low voltage conversion circuit, the isolation carrier spatially corresponds to the high electric field intensity formed by the voltage difference when isolating the high-voltage circuit and the low-voltage circuit in the high-low conversion circuit. Therefore, the isolation carrier used for carrying must avoid repeated breakdown and extinction of partial discharge caused by structural defects under the action of high electric field intensity.

However, in the power conversion module of a traditional solid-state transformer, the high-voltage circuit and the low-voltage circuit are respectively provided with conductor layers with uniform electric fields. However, the outer periphery of the conductor layer will produce tip partial discharge under the action of high electric field intensity.

In view of this, it is necessary to provide a load-bearing structure that is assembled to carry a high-low voltage conversion circuit that generates high electric field intensity. The edge of the conductor layer is designed through the trench to solve the problem of excessive electric field intensity generated at the outer periphery of the conductor layer on the insulating carrier. problem and avoid the occurrence of tip partial discharge to solve the deficiencies of the conventional technology.

The purpose of this case is to provide a load-bearing structure that is assembled to carry a high-low voltage conversion circuit that generates high electric field intensity. The edge of the conductor layer is designed through the groove to solve the problem of excessive electric field intensity generated at the outer periphery of the conductor layer on the insulating carrier. Avoid tip partial discharge.

Another purpose of this case is to provide a load-bearing structure that can carry and isolate high-voltage circuits and low-voltage circuits. The load-bearing structure is made of insulating materials with a dielectric strength greater than 18kV/mm. When isolating high-voltage circuits and low-voltage circuits with a voltage difference between 10kV and 30kV, the outer periphery of the conductor layer is edged with trenches and insulating materials to make the conductor If the distance between the outer periphery of the conductor layer and the outer surface of the insulating material is maintained at more than 0.6mm, the electric field intensity of the air on the outer surface of the insulating material can be reduced to less than 2.0kV/mm, effectively preventing the outer periphery of the conductor layer from contacting the air with high electric field intensity. The phenomenon of tip partial discharge occurs. In addition, when the groove and the insulating material are disposed on the peripheral wall formed by the protrusion, the load-bearing structure can be structured to form an upper half-shell or a lower half-shell, and the two symmetrical half-shells are butted to form a load-bearing shell. The high-voltage circuit can be sandwiched between them, and the low-voltage circuit can be placed outside the carrying case to complete the unit assembly of a small-sized power conversion module, which helps ensure the safety of solid-state transformer applications and enhances the competitiveness of the product.

Another purpose of this project is to provide a load-bearing structure that is assembled to carry a power conversion module with high electric field intensity. The load-bearing structure in which the conductor layer is edged through the groove design can be further applied to a load-bearing shell that can be detached into two symmetrical half-shells. The insulating material is filled into the grooves through fluid dispensing, which can be easily integrated into the manufacturing process of the two symmetrical half-shell power conversion modules without the need for additional space, effectively improving the safety specifications of the power conversion module carried by the shell. and convenience.

In order to achieve the above purpose, this project provides a load-bearing structure that is assembled to carry a high-low voltage conversion circuit. The load-bearing structure includes an insulating carrier, a first conductor layer, a second conductor layer, a first trench and a first insulating material. The insulating carrier has a first surface and a second surface opposite to each other. The first conductor layer and the second conductor layer are respectively coated on the first surface and the second surface, and between the first conductor layer and the second conductor layer There is a voltage difference. The first trench is disposed on the first surface and surrounds the outer periphery of the first conductor layer, wherein the first conductor layer extends from the first surface to the first trench, and the outer periphery of the first conductor layer is located in the first trench. bottom of. The first insulating material covers the outer periphery of the first conductor layer and fills the first trench.

1: Bearing shell

1a, 1b: load-bearing structure

10: Accommodation space

101: Front opening

102:Rear opening

10a, 10b: Insulating carrier

11a, 11b: first surface

12a, 12b: Second surface

13a, 13b: first convex part

131a, 131b: side wall

132a, 132b: top surface

14a, 14b: second raised portion

141a, 141b: side wall

142a, 142b: top surface

21:The first aluminum plate

22:Second aluminum plate

31a, 31b: first conductor layer

32a, 32b: outer peripheral edge

41a, 41b: Second conductor layer

42a, 42b: outer peripheral edge

51a, 51b: first groove

52a, 52b: bottom

61a, 61b: second groove

62a, 62b: bottom

71a, 71b: first insulating material

72a, 72b: outer surface

81a, 81b: Second insulation material

82a, 82b: outer surface

D1, D2, D3, D4: distance

HV: high voltage circuit

LV: low voltage circuit

P1, P2: area

X, Y, Z: axial direction

Figure 1 is a three-dimensional structural view showing the load-bearing structure framed in the load-bearing shell of the preferred embodiment of the present invention.

Figure 2 is a schematic cross-sectional view showing the load-bearing structure of the preferred embodiment of the present invention, which is constructed on a load-bearing case and assembled to carry a high- and low-voltage conversion circuit.

Figure 3 is a schematic diagram showing the load-bearing structure of the preferred embodiment of the present case in a state where the upper and lower half shells of the load-bearing shell are separated.

Figures 4A and 4B are structural exploded views showing the load-bearing structure of the upper half shell part of the preferred embodiment of the present invention.

Figure 5 is a partial enlarged view of the area P1 in Figure 2 .

Figures 6A and 6B are structural exploded views showing the load-bearing structure of the lower half shell part of the preferred embodiment of the present invention.

Figure 7 shows a partial enlarged view of area P2 in Figure 2 .

Some typical embodiments embodying the features and advantages of this case will be described in detail in the following description. It should be understood that this case can have various changes in different aspects without departing from the scope of this case, and the descriptions and drawings are essentially for illustrative purposes and are not used to limit this case. For example, If the following content of the present disclosure describes arranging a first feature on or above a second feature, it means that it includes the embodiment in which the first feature and the second feature are arranged in direct contact, and also includes In this embodiment, additional features may be disposed between the first features and the second features, so that the first features and the second features may not be in direct contact. In addition, repeated reference symbols and/or labels may be used in different embodiments of the present disclosure. These repetitions are for the purpose of simplicity and clarity and are not intended to limit the relationship between the various embodiments and/or the described appearance structures. Furthermore, in order to conveniently describe the relationship between one component or feature and another (plural) component or (plural) feature in the drawings, spatially related terms may be used, such as "above", "below", "top", " Bottom" and similar terms. Spatially relative terms are used to encompass different orientations of a device in use or operation in addition to the orientation depicted in the drawings. The device may be otherwise oriented (e.g., rotated 90 degrees or at other orientations) and the spatially relative terms used in the descriptors interpreted accordingly. In addition, when a component is referred to as being "connected" or "coupled" to another component, it can be directly connected or coupled to the other component or intervening components may be present. Notwithstanding that the numerical ranges and parameters of the broad scope of the disclosure are approximations, the values are stated as precisely as possible in the specific examples. In addition, it can be understood that although terms such as "first" and "second" may be used in the scope of the patent application to describe different components, these components should not be limited by these terms. In the embodiments The components described accordingly are represented by different component symbols. These terms are used to distinguish different components. For example, a first component may be termed a second component, and similarly, a second component may be termed a first component, without departing from the scope of the embodiments. As used, the term "and/or" includes any and all combinations of one or more of the associated listed items. All numerical ranges, quantities, values and percentages disclosed herein (such as those of angles, time durations, temperatures, operating conditions, quantity ratios and the like) are disclosed herein except in operating/working examples or unless expressly stated otherwise. etc.) should be understood to be modified in all embodiments by the words "approximately" or "substantially." Accordingly, unless indicated to the contrary, the numerical parameters set forth in the patent scope of this disclosure and accompanying claims are approximations that may vary as necessary. For example, each numerical parameter should be construed in light of at least the number of stated significant digits and by applying ordinary rounding principles. The range may be expressed in this article as ranging from a one endpoint to another endpoint or between two endpoints. All ranges disclosed herein include the endpoints unless otherwise specified.

Figure 1 is a three-dimensional structural view showing the load-bearing structure framed in the load-bearing shell of the preferred embodiment of the present invention. Figure 2 is a schematic cross-sectional view showing the load-bearing structure of the preferred embodiment of the present invention, which is constructed on a load-bearing case and assembled to carry a high- and low-voltage conversion circuit. Figure 3 is a schematic diagram showing the load-bearing structure of the preferred embodiment of the present case in a state where the upper and lower half shells of the load-bearing shell are separated. In this embodiment, the load-bearing structures 1a and 1b of the high and low voltage conversion circuit (hereinafter referred to as the load-bearing structures) are, for example, the load-bearing casing 1 used in the field of solid state transformer (SST) to simplify the power conversion in the solid state transformer. The loading and assembly process of the module can also ensure that each unit module meets the safety specifications to avoid the occurrence of tip partial discharge due to high electric field intensity. Of course, the application in this case is not limited to this. In this embodiment, the load-bearing structure 1 a is, for example, an upper half-shell, and the load-bearing structure 1 b is, for example, a lower half-shell. The upper and lower half-shells are symmetrically connected to each other to form the load-bearing shell 1 having the accommodation space 10 . In one embodiment, the carrying case 1 includes a front opening 101 and a rear opening 102, which are connected to each other through the accommodation space 10, so that the carrying case 1 can provide ventilation and heat dissipation performance after accommodating the high-voltage circuit HV. Of course, this case does not use This is the limit. It should be noted that when the carrying case 1 carries the power conversion module unit, the high-voltage circuit HV is sandwiched between the carrying structure 1a of the upper half case and the carrying structure 1b of the lower half case, while the low-voltage circuit LV is It is arranged on the outside of the load-bearing shell 1, for example, above the load-bearing structure 1a of the upper half shell. Of course, this case is not limited to this. In other embodiments, when a plurality of carrying cases 1 respectively carry a plurality of power conversion module units and then are stacked, the high-voltage circuit HV inside the carrying case 1 and the low-voltage circuit LV outside another carrying case 1 are in contact with each other. For example, a voltage difference is formed on the load-bearing structure 1b of the lower half-shell. In other words, the load-bearing structures 1a and 1b in this case are not limited to being built on the upper half shell or the lower half shell, as will be explained here.

Figures 4A and 4B are structural exploded views showing the load-bearing structure of the upper half shell part of the preferred embodiment of the present invention. Figure 5 is a partial enlarged view of the area P1 in Figure 2 . In this embodiment, the load-bearing structure 1a is, for example, structured to form an upper half shell. The load-bearing structure 1a includes an insulating carrier 10a, a A conductor layer 31a, a second conductor layer 41a, a first trench 51a and a first insulating material 71a. The insulating carrier 10a has a first surface 11a and a second surface 12a opposite to each other. The first conductor layer 31a and the second conductor layer 41a, for example, are zinc metal coating layers, respectively coated on the first surface 11a and the second surface 12a, and there is a gap between the first conductor layer 31a and the second conductor layer 41a. voltage difference. It should be noted that in this embodiment, the high-voltage circuit HV is, for example, disposed on the first aluminum plate 21 on the first conductor layer 31a. The first aluminum plate 21 is spatially relative to the first conductor layer 31a. Therefore, the high-voltage circuit HV generates The electric field can be uniformized through the action of the first conductor layer 31a. Similarly, the low-voltage circuit LV is, for example, disposed on the second aluminum plate 22 on the second conductor layer 41a. The second aluminum plate 22 is spatially relative to the second conductor layer 41a, so the electric field generated by the low-voltage circuit LV can pass through the second conductor layer 41a. function and homogenization. In other words, there is a voltage difference formed by the high-voltage circuit HV and the low-voltage circuit LV between the first conductor layer 31a and the second conductor layer 41a. Of course, this case does not limit the form in which the high-voltage circuit HV and the low-voltage circuit LV are respectively disposed on the first surface 11a and the second surface 12a. In this embodiment, the voltage difference between the high-voltage circuit HV and the low-voltage circuit LV ranges from 10 kV to 30 kV, but is not limited thereto.

It is worth noting that in this embodiment, the first trench 51a is disposed on the first surface 11a and surrounds the outer peripheral edge 32a of the first conductor layer 31a, wherein the first conductor layer 31a is coated from the first surface 11a. Extending into the first trench 51a, the outer peripheral edge 32a of the first conductor layer 31a is located at the bottom 52a of the first trench 51a. The first insulating material 71a covers the outer peripheral edge 32a of the first conductor layer 31a and fills the first trench 51a. In this embodiment, the voltage difference between the high-voltage circuit HV and the low-voltage circuit LV ranges from 10 kV to 30 kV. The first insulating material 71a is selected from one of the group consisting of epoxy resin, silicone, organic silicone resin, and polyurethane, and the dielectric strength of the first insulating material 71a is greater than 18 kV/mm. In this embodiment, the first insulating material 71a can be filled into the first trench 51a by, for example, a fluid dispensing method, so that the outer surface 72a of the first insulating material 71a is flush with the opening of the first trench 51a. Thereby, the outer peripheral edge 32a of the first conductor layer 31a can be trimmed using the first groove 51a and the first insulating material 71a, so that the outer peripheral edge 32a of the first conductive layer 31a is in contact with the outer surface of the first insulating material 71a. The distance D1 of 72a remains above 0.6mm, and after partial discharge testing, it can be seen that the air electric field intensity of the surface 72a outside the first insulating material 71a can be reduced to 2.0kV/mm In the following, the outer peripheral edge 32a of the first conductor layer 31a is effectively prevented from contacting the air with a high electric field intensity to cause tip partial discharge.

In this embodiment, the load-bearing structure 1a is constructed on the upper half-shell of the load-bearing housing 1. The load-bearing structure 1a further includes a first protruding portion 13a, which extends from the first surface 11a in a direction away from the second surface 12a (inversely). Z-axis direction) convex. The first groove 51a is further disposed on the first protruding part 13a, and the coating of the first conductor layer 31a extends from the first surface 11a along the side wall 131a and the top surface 132a of the first protruding part 13a to the first groove. Bottom 52a in groove 51a. Since the first groove 51a is disposed on the first protruding part 13a, when the first insulating material 71a is filled into the first groove 51a through a fluid dispensing method, the first protruding part 13a forms a raised retaining wall structure. This facilitates fluid dispensing and prevents fluid that has not solidified into the first insulating material 71a from overflowing everywhere. In one embodiment, the outer surface 72a of the first insulating material 71a is flush with the top surface 132a of the first protrusion 13a, for example. Of course, this case is not limited to this.

In addition, in this embodiment, the carrying structure 1a further includes a second groove 61a and a second insulating material 81a. The second groove 61a is disposed on the second surface 12a and surrounds the outer peripheral edge 42a of the second conductor layer 41a, wherein the second conductor layer 41a extends from the second surface 12a to the second groove 61a during coating. The outer peripheral edge 42a of the conductor layer 41a is located at the bottom 62a of the second trench 61a. The second insulating material 81a fills the second trench 61a and covers the outer peripheral edge 42a of the second conductor layer 41a. Similarly, the load-bearing structure 1a further includes a second protruding portion 14a protruding from the second surface 12a in a direction away from the first surface 11a (Z-axis direction). The second groove 61a is further disposed on the second protruding part 14a, and the coating of the second conductor layer 41a extends from the second surface 12a along the side wall 141a and the top surface 142a of the second protruding part 14a to the second groove. Bottom 62a in groove 61a. Since the second groove 61a is disposed on the second protruding part 14a, when the second insulating material 81a is filled into the second groove 61a through a fluid dispensing method, the second protruding part 14a forms a raised retaining wall structure. This facilitates fluid dispensing and prevents fluid that has not solidified into the second insulating material 81a from overflowing everywhere. In this embodiment, the outer surface 82a of the second insulating material 81a is flush with the top surface 142a of the second protruding part 14a, for example. In this embodiment, the voltage difference range of the high-voltage circuit HV and the low-voltage circuit LV is, for example, 10 kV to 30 kV. Second insulation material 81a is selected from one of the group consisting of epoxy resin, silicone, organic silicone resin and polyurethane, and the dielectric strength of the second insulating material 81a is greater than 18kV/mm. When the outer peripheral edge 42a of the second conductive layer 41a is edge-edged using the second trench 61a and the second insulating material 81a, the distance D2 between the outer peripheral edge 42a of the second conductive layer 41a and the outer surface 82a of the second insulating material 81a It can be maintained above 0.6mm. After partial discharge testing, it can be seen that the air electric field intensity on the outer surface 82a of the second insulating material 81a can be reduced to less than 2.0kV/mm, effectively preventing the outer peripheral edge 42a of the second conductor layer 41a from being too high. The phenomenon of tip partial discharge occurs when the electric field strength comes into contact with air.

It should be noted that in this embodiment, the height of the first protruding part 13a and/or the second protruding part 14a can be adjusted according to actual application requirements. In other embodiments, the first protruding portion 13a and/or the second protruding portion 14a may be omitted. In one embodiment, the first trench 51a is recessed directly from the first surface 11a toward the direction of the second surface 12a (Z-axis direction), and the coating of the first conductor layer 31a directly extends from the first surface 11a to the first surface 12a. The bottom 52a of the trench 51a allows the first insulating material 71a to cover the outer peripheral edge 32a of the first conductor layer 31a, so that the outer peripheral edge 32a of the first conductor layer 31a is trimmed. In one embodiment, the outer surface 72a of the first insulating material 71a is, for example, substantially flush with the first surface 11a. In another embodiment, the second trench 61a is recessed directly from the second surface 12a toward the direction of the first surface 11a (counter-Z-axis direction), and the coating of the second conductor layer 41a directly extends from the second surface 12a to The bottom 62a of the second trench 61a allows the second insulating material 81a to cover the outer peripheral edge 42a of the second conductive layer 41a, so that the outer peripheral edge 42a of the second conductive layer 41a is trimmed. In one embodiment, the outer surface 82a of the second insulating material 81a is, for example, substantially flush with the second surface 12a. Of course, this case is not limited to this and will not be described again.

Figures 6A and 6B are structural exploded views showing the load-bearing structure of the lower half shell part of the preferred embodiment of the present invention. Figure 7 shows a partial enlarged view of area P2 in Figure 2 . In this embodiment, the load-bearing structure 1 b is, for example, structured to form a lower half shell. The load-bearing structure 1b includes an insulating carrier 10b, a first conductor layer 31b, a second conductor layer 41b, a first trench 51b and a first insulating material 71b. The insulating carrier 10b has a first surface 11b and a second surface 12b opposite to each other. The first conductor layer 31b and the second conductor layer 31b The body layer 41b is coated on the first surface 11b and the second surface 12b respectively, and there is a voltage difference between the first conductor layer 31b and the second conductor layer 41b. It should be noted that in this embodiment, the high-voltage circuit HV is accommodated in the carrying case 1 and is spatially relative to the first conductor layer 31b coated on the first surface 11b of the insulating carrier 10b. Therefore, the high-voltage circuit HV is The electric field generated by HV can be uniformized through the action of the first conductor layer 31b. In addition, when two carrying cases 1 carrying power conversion modules are stacked one on top of another, the second conductor layer 41b coated on the second surface 12b of the insulating carrier 10b of the upper carrying case 1 is spatially spaced relative to the lower carrying case 1. The electric field generated by the low-voltage circuit LV outside the housing 1 and therefore the low-voltage circuit LV outside the housing 1 below can be uniformized through the action of the second conductor layer 41b of the housing 1 above. In other words, a voltage difference between the high-voltage circuit HV and the low-voltage circuit LV is also formed between the first conductor layer 31b and the second conductor layer 41b.

In this embodiment, the load-bearing structure 1b includes a first protruding portion 13b protruding from the first surface 11b in a direction away from the second surface 12b (Z-axis direction). The first trench 51b is disposed on the first raised portion 13b, and the coating of the first conductor layer 31b extends from the first surface 11b along the sidewall 131b and top surface 132b of the first raised portion 13b to the first trench. Bottom 52b within 51b. The first insulating material 71b covers the outer peripheral edge 32b of the first conductor layer 31b and fills the first trench 51b. In this embodiment, the voltage difference between the high-voltage circuit HV and the low-voltage circuit LV ranges from 10 kV to 30 kV. The first insulating material 71b is selected from one of the group consisting of epoxy resin, silicone, organic silicone resin and polyurethane, and the dielectric strength of the first insulating material 71b is greater than 18kV/mm. In this embodiment, the first insulating material 71b can be filled into the first groove 51b, for example, through a fluid dispensing method, so that the outer surface 72b of the first insulating material 71b is flush with the top surface 132b of the first protruding portion 13b. flat. Thereby, the distance D3 between the outer peripheral edge 32b of the first conductor layer 31b and the outer surface 72b of the first insulating material 71b is maintained at more than 0.6 mm. After partial discharge testing, it can be seen that the air electric field on the outer surface 72b of the first insulating material 71b The intensity can be reduced to less than 2.0 kV/mm, effectively preventing tip partial discharge from occurring when the outer peripheral edge 32b of the first conductor layer 31b comes into contact with the air due to high electric field intensity.

Similarly, in this embodiment, the load-bearing structure 1b includes a second protruding portion 14b protruding from the second surface 12b in a direction away from the first surface 11b (counter-Z-axis direction). The second groove 61b is provided in On the second raised portion 14b, the coating of the second conductor layer 41b extends from the second surface 12b along the side walls 141b and top surface 142b of the second raised portion 14b to the bottom 62b in the second trench 61b. The second insulating material 81b is filled into the second groove 61b through a fluid dispensing method, and the outer surface 82b of the second insulating material 81b is flush with the top surface 142b of the second protruding part 14b, for example. In this embodiment, the voltage difference range of the high-voltage circuit HV and the low-voltage circuit LV is, for example, 10 kV to 30 kV. The second insulating material 81b is selected from one of the group consisting of epoxy resin, silicone, organic silicone resin and polyurethane, and the dielectric strength of the second insulating material 81b is greater than 18kV/mm. When the outer peripheral edge 42b of the second conductive layer 41b is edge-edged by the second trench 61b and the second insulating material 81b, the distance D4 between the outer peripheral edge 42b of the second conductive layer 41b and the outer surface 82b of the second insulating material 81b is It can be maintained above 0.6mm. After partial discharge testing, it can be seen that the air electric field intensity on the outer surface 82b of the second insulating material 81b can be reduced to less than 2.0kV/mm, effectively preventing the outer peripheral edge 42b of the second conductor layer 41b from being too high. The phenomenon of tip partial discharge occurs when the electric field strength comes into contact with air.

In other embodiments, the carrying structures 1a and 1b of this case can be used to carry other circuit modules that generate high electric field intensity. The edge of the conductor layer is designed through the trench to solve the problem of excessive electric field intensity generated at the outer periphery of the conductor layer on the insulating carrier and to avoid the occurrence of tip partial discharge. Of course, the load-bearing structures 1a and 1b that are edged by the conductor layer designed through grooves are not limited to the two half-shells built on the load-bearing shell 1 . However, when the load-bearing structures 1a and 1b are built on two symmetrical half-shells of the load-bearing shell 1, the first insulating materials 71a, 71b and the second insulating materials 81a, 81b can be filled into the corresponding third insulating materials through fluid dispensing. The first groove 51a, 51b and the second groove 61a, 61b can be easily integrated into the manufacturing process of the carrying case 1 without affecting the assembly of the carrying case 1 and the power conversion module. Furthermore, when the first insulating materials 71a, 71b and the second insulating materials 81a, 81b cooperate with the corresponding first grooves 51a, 51b and the second grooves 61a, 61b, no additional space is required when the carrying case 1 is constructed. , which can effectively improve the safety specifications and convenience of the power conversion module carried by the carrying case 1. The carrying case 1 formed by the carrying structures 1a and 1b can easily sandwich the high-voltage circuit HV in the accommodation space 10 therebetween, and the low-voltage circuit LV can be placed outside the carrying case 1 to complete a small-volume power conversion module. The unit assembly helps ensure the safety of solid-state transformer applications and enhances the competitiveness of products. another On the other hand, when the carrying case 1 formed by the carrying structures 1a and 1b is used to carry the high and low voltage conversion circuit of the power conversion module in the solid state transformer, the carrying structures 1a and 1b can also be modulated according to the isolation transformer included in the high and low voltage conversion circuit. Referring to Figures 1 to 3 and taking the load-bearing structure 1a as an example, in one embodiment, the first surface 11a has a first recessed area (not shown) within the first conductor layer 31a, and the second surface 12a There is a second recessed area (not shown) within the second conductor layer 41a. The first recessed area and the second recessed area are spatially opposite to each other. The isolation transformer included in the high and low voltage conversion circuit can be correspondingly disposed in the second recessed area. a recessed area and a second recessed area. Likewise, the load-bearing structure 1 b is, for example, a symmetrical structure of the load-bearing structure 1 a, having the same design. However, it is not a necessary technical feature of this case, and does not affect the edge closing effect of the first conductor layer 31a, 31b or the second conductor layer 41a, 41b. I won’t go into details here.

In summary, this project provides a load-bearing structure that is assembled to carry a high-low voltage conversion circuit that generates high electric field intensity. The conductor layer is edged through a trench design to solve the problem of excessive electric field intensity generated at the outer periphery of the conductor layer on the insulating carrier. , and avoid the occurrence of tip partial discharge. The load-bearing structure is made of insulating materials with a dielectric strength greater than 18kV/mm. When isolating high-voltage circuits and low-voltage circuits with a voltage difference between 10kV and 30kV, the outer periphery of the conductor layer is edged with trenches and insulating materials. If the distance between the outer periphery of the conductor layer and the outer surface of the insulating material is maintained at more than 0.6mm, the electric field intensity of the air on the outer surface of the insulating material can be reduced to less than 2.0kV/mm, effectively preventing the outer periphery of the conductor layer from contacting the air with high electric field intensity. The phenomenon of tip partial discharge occurs due to contact. In addition, when the groove and the insulating material are disposed on the peripheral wall formed by the protrusion, the load-bearing structure can be structured to form an upper half-shell or a lower half-shell, and the two symmetrical half-shells are butted to form a load-bearing shell. The high-voltage circuit can be sandwiched between them, and the low-voltage circuit can be placed outside the carrying case to complete the unit assembly of a small-sized power conversion module, which helps ensure the safety of solid-state transformer applications and enhances the competitiveness of the product. On the other hand, when the load-bearing structure is assembled to carry a power conversion module with high electric field strength, the load-bearing structure with the edge of the conductor layer designed through grooves can be further applied to a load-bearing shell that can be detached into two symmetrical half-shells. The insulating material is filled into the groove through fluid dispensing, which can be easily assembled. The manufacturing process of the two symmetrical half-cases carrying the power conversion module is combined without adding additional space, which effectively improves the safety specifications and convenience of the power conversion module carried by the carrying case.

This case may be modified in various ways by those who are familiar with this technology, but none of them will deviate from the intended protection within the scope of the patent application.

1: Bearing shell

1a, 1b: load-bearing structure

10: Accommodation space

101: Front opening

102:Rear opening

10a, 10b: Insulating carrier

31a, 31b: first conductor layer

32a, 32b: outer peripheral edge

41a, 41b: Second conductor layer

42a, 42b: outer peripheral edge

71a, 71b: first insulating material

81a, 81b: Second insulation material

HV: high voltage circuit

LV: low voltage circuit

P1, P2: area

X, Y, Z: axial direction

Claims (21)

A load-bearing structure is assembled to carry a high-low voltage conversion circuit. The load-bearing structure includes: an insulating carrier having a first surface and a second surface opposite to each other; a first conductor layer and a second conductor layer, respectively coated Distributed on the first surface and the second surface, and there is a voltage difference between the first conductor layer and the second conductor layer; a first trench is provided on the first surface and surrounds the first an outer periphery of the conductor layer, wherein the first conductor layer extends from the first surface into the first trench, the outer periphery of the first conductor layer is located at the bottom of the first trench; and a first insulation The material covers the outer peripheral edge of the first conductor layer and fills the first trench. The load-bearing structure of claim 1, wherein the high- and low-voltage conversion circuit is a power conversion module in a solid-state transformer. The load-bearing structure of claim 1, wherein the high-low voltage conversion circuit includes a high-voltage circuit and a low-voltage circuit, the high-voltage circuit is disposed on the first surface, spatially relative to the first conductor layer, and the low-voltage circuit Disposed on the second surface, spatially relative to the second conductor layer, to form the voltage difference between the first conductor layer and the second conductor layer. The load-bearing structure of claim 3, wherein the load-bearing structure forms a half-shell, the high-voltage circuit is sandwiched between the two half-shells, and the low-voltage circuit is disposed outside one of the two half-shells. The load-bearing structure of claim 3, wherein the voltage difference between the high-voltage circuit and the low-voltage circuit ranges from 10 kV to 30 kV. The load-bearing structure of claim 1, wherein the distance from the outer peripheral edge of the first conductor layer to the outer surface of the first insulating material is greater than 0.6 mm. The load-bearing structure of claim 1, wherein the air electric field intensity on the outer surface of the first insulating material is less than 2.0 kV/mm. The load-bearing structure of claim 1, wherein the first insulating material is selected from the group consisting of epoxy resin, silicone, organic silicone resin, and polyurethane. The load-bearing structure of claim 1, wherein the dielectric strength of the first insulating material is greater than 18kV/mm. The load-bearing structure of claim 1, wherein the first insulating material is filled into the first groove through a fluid dispensing method. The load-bearing structure of claim 1, further comprising a first protruding portion protruding from the first surface in a direction away from the second surface, wherein the first groove is disposed on the first protruding portion. , wherein the first conductor layer extends from the first surface to the first trench along the sidewalls and top surfaces of the first protrusion. The load-bearing structure of claim 11, wherein the outer surface of the first insulating material is flush with the top surface of the first protrusion. The load-bearing structure of claim 1, further comprising: a second groove disposed on the second surface and surrounding an outer periphery of the second conductor layer, wherein the second conductor layer extends from the second surface Extending into the second trench, the outer periphery of the second conductor layer is located at the bottom of the second trench; and a second insulating material fills the second trench and covers the second conductor layer. the outer periphery. The load-bearing structure of claim 13, wherein the distance from the outer peripheral edge of the second conductor layer to the outer surface of the second insulating material is greater than 0.6 mm. The load-bearing structure of claim 13, wherein the air electric field intensity on the outer surface of the second insulating material is less than 2.0 kV/mm. The load-bearing structure of claim 13, wherein the second insulating material is selected from the group consisting of epoxy resin, silicone, organic silicone resin, and polyurethane. The load-bearing structure of claim 13, wherein the dielectric strength of the second insulating material is greater than 18kV/mm. The load-bearing structure of claim 13, wherein the second insulating material is filled into the second groove through a fluid dispensing method. The load-bearing structure of claim 13, further comprising a second protruding portion protruding from the second surface in a direction away from the first surface, wherein the second groove is disposed on the second protruding portion. , wherein the second conductor layer extends from the second surface to the second trench along the sidewalls and top surfaces of the second protrusion. The load-bearing structure of claim 19, wherein the outer surface of the second insulating material is flush with the top surface of the second protrusion. The load-bearing structure of claim 1, wherein the first surface has a first recessed area within the first conductor layer, the second surface has a second recessed area within the second conductor layer, and the A recessed area and the second recessed area are spatially opposite to each other, and the high-low voltage conversion circuit includes an isolation transformer correspondingly disposed in the first recessed area and the second recessed area.

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