TWI805781B - Resist composition and method of forming resist pattern - Google Patents

Resist composition and method of forming resist pattern Download PDF

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TWI805781B
TWI805781B TW108120875A TW108120875A TWI805781B TW I805781 B TWI805781 B TW I805781B TW 108120875 A TW108120875 A TW 108120875A TW 108120875 A TW108120875 A TW 108120875A TW I805781 B TWI805781 B TW I805781B
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TW202014798A (en
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新井雅俊
前橋貴哉
大西行志
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日商東京應化工業股份有限公司
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02Monomers containing only one unsaturated aliphatic radical
    • C08F212/04Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/22Oxygen
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • C08F220/12Esters of monohydric alcohols or phenols
    • C08F220/16Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1807C7-(meth)acrylate, e.g. heptyl (meth)acrylate or benzyl (meth)acrylate
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • C08F220/12Esters of monohydric alcohols or phenols
    • C08F220/16Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1812C12-(meth)acrylate, e.g. lauryl (meth)acrylate
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00Chemical modification by after-treatment
    • C08F8/12Hydrolysis
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D125/00Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Coating compositions based on derivatives of such polymers
    • C09D125/18Homopolymers or copolymers of aromatic monomers containing elements other than carbon and hydrogen
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D133/00Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
    • C09D133/04Homopolymers or copolymers of esters
    • C09D133/06Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09D133/10Homopolymers or copolymers of methacrylic acid esters
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • GPHYSICS
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    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/162Coating on a rotating support, e.g. using a whirler or a spinner
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/168Finishing the coated layer, e.g. drying, baking, soaking
    • GPHYSICS
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    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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    • G03F7/2037Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
    • GPHYSICS
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    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/32Liquid compositions therefor, e.g. developers
    • G03F7/322Aqueous alkaline compositions
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/38Treatment before imagewise removal, e.g. prebaking

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Abstract

A resist composition including a base component (A) and an acid generator component (B), the base component (A) including a resin component (A1) having a structural unit (a0) represented by general formula (a0) shown below, and the acid generator component (B) containing at least one member selected from the group consisting of a compound (b-1), a compound (b-2) and a compound (b-3) represented by general formula (b-3) shown below (wherein Wa represents a divalent aromatic hydrocarbon group; Ra00 represents an acid dissociable group; R101 , R104 and R106 each independently represents a hydrocarbon group containing an aromatic ring; R105 , R107 and R108 each independently represents a cyclic group, a chain alkyl group which may have a substituent or a chain alkenyl group; R102 represents a fluorine atom or a fluorinated alkyl group of 1 to 5 carbon atoms and M’m+ represents an m-valent onium cation).

Description

阻劑組成物及阻劑圖型形成方法Resist composition and resist pattern forming method

本發明為有關阻劑組成物及阻劑圖型形成方法。 本案為依2018年6月18日於日本申請之特願2018-115625號為基礎主張優先權,其內容係援用於以下說明。The present invention relates to a resist composition and a resist pattern forming method. In this case, priority is claimed based on Japanese Patent Application No. 2018-115625 filed in Japan on June 18, 2018, and its content is cited in the following description.

微影蝕刻技術中,一般多使用例如於基板上,形成由阻劑材料形成之阻劑膜,對該阻劑膜進行選擇性曝光、施以顯影處理等方式,而於前述阻劑膜上形成特定形狀的阻劑圖型等步驟進行。阻劑膜的曝光部變化為溶解於顯影液之特性的阻劑材料稱為正型、曝光部變化為不溶解於顯影液之特性的阻劑材料稱為負型。 近年來,於半導體元件或液晶顯示元件之製造中,伴隨微影蝕刻技術的進步,而急速地進入圖型的微細化。 微細化之方法,一般為將曝光光源予以短波長化(高能量化)之方式進行。具體而言,以往為使用g線、i線為代表的紫外線,現在則開始使用KrF準分子雷射,或ArF準分子雷射進行半導體元件之量產。又,亦開始對於較該些準分子雷射為更短波長(高能量)的EUV(極紫外線),或EB (電子線)、X射線等進行研究。In lithographic etching technology, generally, for example, forming a resist film formed of a resist material on a substrate, selectively exposing the resist film, applying development treatment, etc., and forming on the aforementioned resist film Steps such as resist patterning of a specific shape are carried out. The resist material whose exposed part of the resist film changes to dissolve in the developing solution is called positive type, and the resist material whose exposed part changes to the property of not dissolving in the developing solution is called negative type. In recent years, in the manufacture of semiconductor elements or liquid crystal display elements, along with the advancement of lithographic etching technology, the miniaturization of patterns has rapidly entered. The method of miniaturization is generally carried out by shortening the wavelength (higher energy) of the exposure light source. Specifically, ultraviolet light represented by g-line and i-line has been used in the past, but now KrF excimer laser or ArF excimer laser is used for mass production of semiconductor devices. Furthermore, studies have also begun on EUV (extreme ultraviolet), EB (electron beam), X-rays, etc., which have a shorter wavelength (high energy) than these excimer lasers.

此外,目前,於EUV微影蝕刻或EB微影蝕刻中,阻劑材料就提升對EUV或EB的感度、可形成作為標靶的微細阻劑圖型的解析性等的微影蝕刻特性等目的,目前為止,一般多使用被提案作為KrF準分子雷射用、ArF準分子雷射用等的化學增強型阻劑。特別是含有丙烯酸系樹脂作為基底樹脂的化學增強型阻劑,可使該些微影蝕刻特性更優良。 阻劑材料中,特別是EUV曝光中,酸擴散控制多為需解決之問題。於控制酸擴散的方法中,一般為使用變更酸產生劑的陰離子結構之方法,故多使用已知具有酸之擴散長度為短擴散的陰離子結構者。 又,有關控制酸之擴散等,已有使用將高分子化合物的設計作各種變更之方法。In addition, currently, in EUV lithography or EB lithography, resist materials are used for the purpose of improving the sensitivity to EUV or EB, and the resolution of fine resist patterns that can be used as targets, etc. , So far, chemically amplified resists proposed as KrF excimer lasers, ArF excimer lasers, etc. are generally used. In particular, the chemically amplified resist containing acrylic resin as the base resin can make these lithographic etching properties more excellent. In resist materials, especially in EUV exposure, acid diffusion control is mostly a problem to be solved. In the method of controlling the diffusion of acid, the method of changing the anion structure of the acid generator is generally used, so the anion structure known to have a short diffusion length of the acid is often used. Also, in relation to the control of acid diffusion, etc., various changes in the design of polymer compounds have been used.

例如:專利文獻1中,記載使用具有特定的酸解離性官能基之高分子化合物,以求提高對酸之反應性、對顯影液之溶解性等目的之阻劑組成物等。 專利文獻2中,記載使用一種具有具苯乙烯羧酸骨架,且羧基的羥基之氫原子被酸不安定基所取代的重複單位之高分子化合物,其為可抑制酸之擴散而提高溶解對比與耐蝕刻性的阻劑組成物。 [先前技術文獻] [專利文獻]For example, in Patent Document 1, it is described that a polymer compound having a specific acid-dissociative functional group is used to improve the reactivity to acid, the solubility to a developing solution, and the like as a resist composition. In Patent Document 2, it is described to use a polymer compound having a repeating unit having a styrene carboxylic acid skeleton, and the hydrogen atom of the hydroxyl group of the carboxyl group is replaced by an acid labile group, which can inhibit the diffusion of acid and improve the dissolution ratio and Etch-resistant resist composition. [Prior Art Literature] [Patent Document]

[專利文獻1]國際公開第2010/095698號 [專利文獻2]日本專利第4305637號公報[Patent Document 1] International Publication No. 2010/095698 [Patent Document 2] Japanese Patent No. 4305637

[發明所欲解決之問題][Problem to be solved by the invention]

伴隨微影蝕刻技術之更進步、阻劑圖型更微細化之進展,例如使用EUV或EB之微影蝕刻,皆以形成數十nm的微細圖型為目標。該些阻劑圖型尺寸越小時,阻劑組成物中,則被要求對曝光光源具有更高的感度,及低粗糙度等的良好微影蝕刻特性。就更提升微影蝕刻特性之觀點,阻劑組成物中的高分子化合物及酸產生劑之添加等,仍存在有改良的空間。With the advancement of lithographic etching technology, the development of finer resist patterns, such as lithographic etching using EUV or EB, all aim to form fine patterns of tens of nanometers. The smaller the size of the resist patterns, the higher the sensitivity to the exposure light source, and the good lithographic etching characteristics such as low roughness are required in the resist composition. From the point of view of improving the lithographic etching characteristics, there is still room for improvement, such as the addition of polymer compounds and acid generators in the resist composition.

本發明為鑑於上述情事所提出者,而以提供一種具有良好微影蝕刻特性的阻劑組成物,及使用該阻劑組成物的阻劑圖型形成方法為目的。 [解決問題之方法]The present invention is proposed in view of the above circumstances, and aims to provide a resist composition having good lithographic etching characteristics, and a resist pattern forming method using the resist composition. [How to solve the problem]

本發明者們經過研究結果,發現經由控制因曝光所產生之酸擴散至圖型未曝光部(酸擴散)之方式,即可改善阻劑圖型的粗糙度。此外,本發明者們,發現經由提高阻劑的基底樹脂與酸產生劑之相互作用之方式,即可控制酸之擴散等效果,因而完成本發明。As a result of research, the present inventors found that the roughness of the resist pattern can be improved by controlling the diffusion of the acid generated by the exposure to the unexposed portion of the pattern (acid diffusion). In addition, the present inventors have found that effects such as diffusion of acid can be controlled by improving the interaction between the base resin of the resist and the acid generator, and thus completed the present invention.

本發明之第一態樣為,一種阻劑組成物,其為經由曝光而產生酸,且,經由酸之作用而對顯影液之溶解性產生變化的阻劑組成物,其為含有:經由酸之作用而對顯影液之溶解性產生變化的基材成份(A),與經由曝光而產生酸之酸產生劑成份(B),又,前述基材成份(A)為含有具有下述通式(a0)所表示的結構單位(a0)樹脂成份(A1),前述酸產生劑成份(B)為含有由下述通式(b-1)所表示之化合物(b-1)、下述通式(b-2)所表示之化合物(b-2)及下述通式(b-3)所表示之化合物(b-3)所成之群所選出之至少1種。The first aspect of the present invention is a resist composition that generates acid through exposure and changes the solubility of the developer through the action of the acid, which contains: The base material component (A) that changes the solubility of the developer due to the action of the developer, and the acid generator component (B) that generates acid through exposure, and the above base material component (A) contains the following general formula: The structural unit (a0) represented by (a0) is a resin component (A1), and the acid generator component (B) contains a compound (b-1) represented by the following general formula (b-1), the following general formula At least one selected from the group consisting of a compound (b-2) represented by formula (b-2) and a compound (b-3) represented by the following general formula (b-3).

Figure 02_image007
[式中,R0 為氫原子、碳數1~5之烷基、鹵素原子或碳數1~5之鹵化烷基;Vax0 為單鍵或2價之連結基;Wa為可具有取代基的2價之芳香族烴基;Va0 為可具有醚鍵結的2價之烴基;na0 為0~2之整數;Ra00 為酸解離性基]。
Figure 02_image007
[wherein, R 0 is a hydrogen atom, an alkyl group with 1 to 5 carbons, a halogen atom or a halogenated alkyl group with 1 to 5 carbons; Va x0 is a single bond or a divalent linking group; Wa is an optional substituent 2-valent aromatic hydrocarbon group; Va 0 is a 2-valent hydrocarbon group that may have ether linkage; n a0 is an integer from 0 to 2; Ra 00 is an acid dissociative group].

Figure 02_image009
[式中,R101 、R104 及R106 ,各別獨立為含有可具有取代基的芳香環之烴基;R105 、R107 及R108 ,各別獨立為可具有取代基之環式基、可具有取代基之鏈狀烷基,或可具有取代基之鏈狀烯基;R102 為氟原子或碳數1~5之氟化烷基。Y101 為單鍵或含有氧原子的2價之連結基。 V101 ~V103 各別獨立為單鍵、伸烷基或氟化伸烷基。L101 ~L102 各別獨立為單鍵或氧原子。L103 ~L105 各別獨立為單鍵、-CO-或-SO2 -。m為1以上之整數,且M’m+ 為m價之鎓陽離子]。
Figure 02_image009
[wherein, R 101 , R 104 and R 106 are each independently a hydrocarbon group containing an aromatic ring that may have a substituent; R 105 , R 107 and R 108 are each independently a cyclic group that may have a substituent, A chained alkyl group that may have a substituent, or a chained alkenyl group that may have a substituent; R 102 is a fluorine atom or a fluorinated alkyl group with 1 to 5 carbon atoms. Y101 is a single bond or a divalent linking group containing an oxygen atom. V 101 to V 103 are each independently a single bond, an alkylene group or a fluorinated alkylene group. L 101 to L 102 are each independently a single bond or an oxygen atom. L 103 to L 105 are each independently a single bond, -CO- or -SO 2 -. m is an integer of 1 or more, and M' m+ is an m-valent onium cation].

本發明之第二態樣為,一種阻劑圖型形成方法,其為具有:使用前述第一態樣的阻劑組成物於支撐體上形成阻劑膜之步驟、使前述阻劑膜曝光之步驟,及使前述曝光後的阻劑膜顯影而形成阻劑圖型之步驟。 [發明之效果]The second aspect of the present invention is a method for forming a resist pattern, comprising: using the resist composition of the first aspect to form a resist film on a support; exposing the resist film to light. step, and the step of developing the above-mentioned exposed resist film to form a resist pattern. [Effect of Invention]

依本發明內容,可提供一種具有良好微影蝕刻特性的阻劑組成物,及使用該阻劑組成物的阻劑圖型形成方法。According to the content of the present invention, a resist composition with good lithographic etching properties and a resist pattern forming method using the resist composition can be provided.

[實施發明之形態][Mode of Implementing the Invention]

本說明書及本申請專利範圍中,「脂肪族」為,與芳香族為相對性的概念,定義為表示不具有芳香族性之基、化合物等者。 「烷基」,於無特別限定時,為包含直鏈狀、支鏈狀及環狀之1價飽和烴基者。烷氧基中之烷基亦為相同。 「伸烷基」,於無特別限定時,為包含直鏈狀、支鏈狀及環狀的2價飽和烴基者。 「鹵化烷基」為,烷基的氫原子之一部份或全部被鹵素原子取代而得之基,該鹵素原子,可列舉如:氟原子、氯原子、溴原子、碘原子等。 「氟化烷基」或「氟化伸烷基」為,烷基或伸烷基的氫原子之一部份或全部被氟原子取代而得之基。 「結構單位」為,構成高分子化合物(樹脂、聚合物、共聚物)的單體單位(單體單位)之意。 記載為「可具有取代基」之情形,為包含氫原子(-H)被1價之基所取代之情形,與伸甲基(-CH2 -)被2價之基所取代之情形等二者。 「曝光」為包含輻射線照射之全部概念。In this specification and the claims of this application, "aliphatic" is a concept that is relative to aromatic, and is defined as a group, compound, etc. that do not have aromaticity. "Alkyl group" includes linear, branched and cyclic monovalent saturated hydrocarbon groups unless otherwise specified. The same applies to the alkyl group in the alkoxy group. The "alkylene group" includes linear, branched and cyclic divalent saturated hydrocarbon groups unless otherwise specified. A "halogenated alkyl group" is a group in which a part or all of the hydrogen atoms of the alkyl group are replaced by a halogen atom. The halogen atom includes, for example, a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom. A "fluorinated alkyl group" or "fluorinated alkylene group" is a group in which a part or all of the hydrogen atoms of the alkyl group or alkylene group are substituted with fluorine atoms. "Structural unit" means a monomer unit (monomer unit) constituting a polymer compound (resin, polymer, copolymer). The case described as "may have a substituent" includes the case where a hydrogen atom (-H) is substituted by a monovalent group, and the case where a methylene group (-CH 2 -) is substituted by a divalent group, etc. By. "Exposure" is an overall concept including radiation exposure.

「丙烯酸酯所衍生的結構單位」係指,丙烯酸酯之乙烯性雙鍵經開裂而構成的結構單位之意。 「丙烯酸酯」為,丙烯酸(CH2 =CH-COOH)的羧基末端之氫原子被有機基取代而得之化合物。 丙烯酸酯中,α位的碳原子鍵結之氫原子可被取代基所取代。取代該α位的碳原子鍵結之氫原子的取代基(Rα0 ),為氫原子以外的原子或基,其可列舉如:碳數1~5之烷基、碳數1~5之鹵化烷基等。又,亦包含取代基(Rα0 )被含有酯鍵結的取代基所取代的依康酸二酯,或取代基(Rα0 )被羥烷基或該羥基被修飾而得之基所取代的α羥基丙烯酸酯者。又,丙烯酸酯之α位的碳原子,於無特別限定時,係指丙烯酸的羰基所鍵結的碳原子之意。 以下,α位的碳原子鍵結之氫原子被取代基取代而得之丙烯酸酯,亦稱為α取代丙烯酸酯。又,包括丙烯酸酯與α取代丙烯酸酯亦統稱為「(α取代)丙烯酸酯」。又,α位的碳原子鍵結之氫原子被取代基取代而得之丙烯酸,亦稱為α取代丙烯酸。又,包括丙烯酸與α取代丙烯酸亦統稱為「(α取代)丙烯酸」。"Structural unit derived from acrylate" means a structural unit formed by cleavage of the ethylenic double bond of acrylate. "Acrylic ester" is a compound in which the hydrogen atom at the carboxyl terminal of acrylic acid (CH 2 =CH-COOH) is substituted with an organic group. In acrylate, the hydrogen atom bonded to the carbon atom at the alpha position can be replaced by a substituent. The substituent (R α0 ) that replaces the hydrogen atom bonded to the carbon atom at the α position is an atom or group other than a hydrogen atom, such as: an alkyl group with 1 to 5 carbon atoms, a halogenated group with 1 to 5 carbon atoms Alkyl etc. Also includes itaconic acid diesters in which the substituent (R α0 ) is substituted by a substituent containing an ester bond, or in which the substituent (R α0 ) is substituted by a hydroxyalkyl group or a group obtained by modifying the hydroxyl group Alpha hydroxy acrylates. Also, the carbon atom at the α-position of the acrylate refers to the carbon atom to which the carbonyl group of acrylic acid is bonded, unless otherwise specified. Hereinafter, an acrylate obtained by substituting a hydrogen atom bonded to a carbon atom at the α position is also called an α-substituted acrylate. Also, acrylates and α-substituted acrylates are collectively referred to as “(α-substituted) acrylates”. Also, acrylic acid in which the hydrogen atom bonded to the carbon atom at the α position is replaced by a substituent is also called α-substituted acrylic acid. Also, acrylic acid and α-substituted acrylic acid are collectively referred to as "(α-substituted) acrylic acid".

「丙烯醯胺所衍生的結構單位」係指,丙烯醯胺的乙烯性雙鍵經開裂而構成的結構單位之意。 丙烯醯胺中,α位的碳原子鍵結之氫原子可被取代基所取代,或丙烯醯胺的胺基中的氫原子之一者或二者可被取代基所取代。又,丙烯醯胺之α位的碳原子,於無特別限定時,係指丙烯醯胺的羰基所鍵結的碳原子之意。 取代丙烯醯胺之α位的碳原子所鍵結之氫原子的取代基,例如:與前述α取代丙烯酸酯中,被列舉作為α位的取代基者(取代基(Rα0 ))為相同之內容等。"Structural unit derived from acrylamide" means a structural unit formed by cleavage of the ethylenic double bond of acrylamide. In acrylamide, the hydrogen atom bonded to the carbon atom at the α position may be replaced by a substituent, or one or both of the hydrogen atoms in the amine group of the acrylamide may be replaced by a substituent. Also, the carbon atom at the α-position of acrylamide means the carbon atom to which the carbonyl group of acrylamide is bonded unless otherwise specified. Substituents that substitute the hydrogen atom bonded to the carbon atom at the α-position of acrylamide, for example, are the same as those listed as the substituent at the α-position (substituent (R α0 )) in the above-mentioned α-substituted acrylate content etc.

「羥基苯乙烯所衍生的結構單位」係指,羥基苯乙烯的乙烯性雙鍵經開裂而構成的結構單位之意。「羥基苯乙烯衍生物所衍生的結構單位」係指,羥基苯乙烯衍生物的乙烯性雙鍵經開裂而構成的結構單位之意。 「羥基苯乙烯衍生物」,為包含羥基苯乙烯的α位之氫原子被烷基、鹵化烷基等其他取代基取代而得者,及該些的衍生物之概念。該些的衍生物,可列舉如:α位之氫原子可被取代基所取代的羥基苯乙烯之羥基中的氫原子被有機基取代者;α位之氫原子可被取代基所取代的羥基苯乙烯之苯環上,鍵結羥基以外的取代基者等。又,α位(α位之碳原子),於無特別限定時,係指苯環上所鍵結的碳原子之意。 取代羥基苯乙烯的α位之氫原子的取代基,例如:與前述α取代丙烯酸酯中,被列舉作為α位的取代基者為相同之內容等。"Structural unit derived from hydroxystyrene" means a structural unit formed by cleavage of the ethylenic double bond of hydroxystyrene. The "structural unit derived from a hydroxystyrene derivative" means a structural unit formed by cleavage of the ethylenic double bond of a hydroxystyrene derivative. "Hydroxystyrene derivatives" refers to those obtained by substituting the α-position hydrogen atom of hydroxystyrene with other substituents such as alkyl groups, halogenated alkyl groups, and the concepts of derivatives thereof. These derivatives include, for example: the hydrogen atom in the α-position can be replaced by a substituent; the hydrogen atom in the hydroxyl group of hydroxystyrene can be replaced by an organic group; the hydroxy group can be substituted by a substituent. Substituents other than hydroxyl groups bonded to the benzene ring of styrene, etc. Also, the α-position (carbon atom at the α-position) means the carbon atom bonded to the benzene ring unless otherwise specified. The substituents substituting the hydrogen atom at the α-position of hydroxystyrene are, for example, the same as those listed as the substituents at the α-position in the aforementioned α-substituted acrylate.

「乙烯安息香酸或乙烯安息香酸衍生物所衍生的結構單位」係指,乙烯安息香酸或乙烯安息香酸衍生物的乙烯性雙鍵經開裂而構成的結構單位之意。 「乙烯安息香酸衍生物」,為包含乙烯安息香酸的α位之氫原子被烷基、鹵化烷基等其他取代基所取代者,及該些的衍生物之概念。該些的衍生物,可列舉如:α位之氫原子可被取代基所取代的乙烯安息香酸的羧基中之氫原子被有機基取代者;α位之氫原子可被取代基所取代的乙烯安息香酸之苯環上,鍵結羥基及羧基以外的取代基者等。又,α位(α位之碳原子),於無特別限定時,係指苯環上所鍵結的碳原子之意。"Structural unit derived from ethylene benzoic acid or ethylene benzoic acid derivative" means a structural unit formed by cleavage of the ethylenic double bond of ethylene benzoic acid or ethylene benzoic acid derivative. "Ethylene benzoic acid derivatives" refers to those whose α-position hydrogen atoms of ethylene benzoic acid are replaced by other substituents such as alkyl groups, halogenated alkyl groups, and their derivatives. These derivatives include, for example: the hydrogen atom in the carboxyl group of ethylene benzoic acid that can be replaced by a substituent; the hydrogen atom in the α-position can be replaced by a substituent; Substituents other than hydroxyl and carboxyl are bonded to the benzene ring of benzoic acid. Also, the α-position (carbon atom at the α-position) means the carbon atom bonded to the benzene ring unless otherwise specified.

上述作為α位之取代基的烷基,以直鏈狀或支鏈狀之烷基為佳,具體而言,可列舉如:碳數1~5之烷基(甲基、乙基、丙基、異丙基、n-丁基、異丁基、tert-丁基、戊基、異戊基、新戊基)等。 又,作為α位之取代基的鹵化烷基,具體而言,可列舉如:上述「作為α位之取代基的烷基」的氫原子之一部份或全部,被鹵素原子取代而得之基等。該鹵素原子,可列舉如:氟原子、氯原子、溴原子、碘原子等,特別是以氟原子為佳。 又,作為α位之取代基的羥烷基,具體而言,可列舉如:上述「作為α位之取代基的烷基」的氫原子之一部份或全部,被羥基取代而得之基等。該羥烷基中的羥基之數,以1~5為佳,以1為最佳。The above-mentioned alkyl group as the substituent at the α position is preferably a straight-chain or branched-chain alkyl group, specifically, for example: an alkyl group with 1 to 5 carbon atoms (methyl, ethyl, propyl, etc.) , isopropyl, n-butyl, isobutyl, tert-butyl, pentyl, isopentyl, neopentyl) and the like. In addition, the halogenated alkyl group as the substituent at the α-position, specifically, one in which part or all of the hydrogen atoms of the above-mentioned "alkyl group as the substituent at the α-position" is substituted with a halogen atom can be mentioned. Base etc. The halogen atom includes, for example, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, etc., and a fluorine atom is particularly preferable. In addition, specific examples of the hydroxyalkyl group as the substituent at the α-position include groups obtained by substituting a part or all of the hydrogen atoms of the above-mentioned "alkyl group as the substituent at the α-position" with hydroxyl groups. wait. The number of hydroxyl groups in the hydroxyalkyl group is preferably from 1 to 5, and most preferably 1.

本說明書及本申請專利範圍中,依化學式所表示之結構的不同而會有存在不對稱碳,因而會有存在鏡像異構物(enantiomer)或非鏡像異構物(diastereomer)者,該情形為使用一個通式代表而表示該些異構物。該些異構物可單獨使用亦可、以混合物形式使用亦可。In this specification and the patent scope of this application, there may be asymmetric carbons depending on the structure represented by the chemical formula, so there may be enantiomers or diastereomers. The situation is These isomers are represented using one general formula. These isomers may be used alone or as a mixture.

(阻劑組成物) 本實施形態之阻劑組成物,為經由曝光而產生酸,且,經由酸之作用而對顯影液之溶解性產生變化者。 該阻劑組成物,為含有經由酸之作用而對顯影液之溶解性產生變化的基材成份(A)(以下,亦稱為「(A)成份」)。(resist composition) The resist composition of the present embodiment generates acid by exposure, and changes the solubility of the developing solution by the action of the acid. This resist composition contains the substrate component (A) (hereinafter, also referred to as "component (A)") whose solubility in a developer is changed by the action of an acid.

使用本實施形態的阻劑組成物形成阻劑膜,並對該該阻劑膜進行選擇性曝光時,於該阻劑膜的曝光部會產生酸,並經由該酸之作用而使(A)成份對顯影液之溶解性發生變化的同時,而該阻劑膜的未曝光部中,因為(A)成份對顯影液之溶解性並未發生變化,故於該阻劑膜的曝光部與未曝光部之間,會發生對顯影液的溶解性之差異。因此,對該阻劑膜進行顯影時,該阻劑組成物為正型時,阻劑膜曝光部被溶解去除而形成正型的阻劑圖型,該阻劑組成物為負型時,阻劑膜未曝光部被溶解去除而形成負型的阻劑圖型。When a resist film is formed using the resist composition of this embodiment and the resist film is selectively exposed, an acid is generated in the exposed portion of the resist film, and (A) While the solubility of the component to the developer changes, but in the unexposed part of the resist film, because the solubility of the component (A) to the developer does not change, the exposed part and the unexposed part of the resist film Differences in solubility to the developer occur between exposed parts. Therefore, when developing the resist film, when the resist composition is positive, the exposed portion of the resist film is dissolved and removed to form a positive resist pattern, and when the resist composition is negative, the resist pattern is formed. The unexposed part of the resist film is dissolved and removed to form a negative resist pattern.

本說明書中,阻劑膜曝光部被溶解去除而形成正型阻劑圖型的阻劑組成物,稱為正型阻劑組成物,阻劑膜未曝光部被溶解去除而形成負型阻劑圖型的阻劑組成物,稱為負型阻劑組成物。 本實施形態之阻劑組成物,可為正型阻劑組成物亦可、負型阻劑組成物亦可。 又,本實施形態之阻劑組成物,可使用於阻劑圖型形成時的顯影處理為使用鹼顯影液的鹼顯影製程亦可,使用於該顯影處理為使用含有有機溶劑的顯影液(有機系顯影液)的溶劑顯影製程亦可。 即,本實施形態之阻劑組成物為:於鹼顯影製程中可形成正型阻劑圖型的「鹼顯影製程用正型阻劑組成物」,於溶劑顯影製程中可形成負型阻劑圖型的「溶劑顯影製程用負型阻劑組成物」。In this specification, the resist composition in which the exposed part of the resist film is dissolved and removed to form a positive resist pattern is called a positive resist composition, and the unexposed part of the resist film is dissolved and removed to form a negative resist. Patterned resist composition is called negative resist composition. The resist composition of this embodiment may be a positive resist composition or a negative resist composition. In addition, the resist composition of this embodiment can be used in an alkaline development process using an alkali developing solution as the developing treatment when forming the resist pattern, and it is also possible to use a developing solution containing an organic solvent (organic solvent) in the developing treatment. The solvent development process of developer solution) is also available. That is, the resist composition of this embodiment is: a "positive resist composition for alkali developing process" that can form a positive resist pattern in an alkali developing process, and can form a negative resist pattern in a solvent developing process Graphical "Negative Resist Composition for Solvent Development Process".

本實施形態之阻劑組成物,為具有經由曝光而產生酸之酸產生能力者,其可為:(A)成份經由曝光而產生酸者亦可、(A)成份與其他添加的添加劑成份經曝光而產生酸者亦可。 具體而言,實施形態之阻劑組成物,可為:(1)含有經由曝光而產生酸之酸產生劑成份(B)(以下,亦稱為「(B)成份」)者亦可;(2)(A)成份為經由曝光而產生酸之成份者亦可;(3)(A)成份為經由曝光而產生酸之成份,且,尚含有(B)成份者亦可。 即,於上述(2)或(3)之情形時,(A)成份為「經由曝光而產生酸,且,經由酸之作用而對顯影液之溶解性產生變化的基材成份」。(A)成份為經由曝光而產生酸,且,經由酸之作用而對顯影液之溶解性產生變化的基材成份時,後述(A1)成份,以經由曝光而產生酸,且,經由酸之作用而對顯影液之溶解性產生變化的高分子化合物為佳。該些高分子化合物,可使用具有經由曝光而產生酸的結構單位的共聚物。 經由曝光而產生酸的結構單位,可列舉如:公知的結構單位等。 本實施形態之阻劑組成物,以上述(1)之情形者為特佳。The resist composition of this embodiment has the ability to generate acid by exposure to acid, which can be: (A) component can generate acid by exposure, (A) component and other added additive components can be Those who produce acid due to exposure are also acceptable. Specifically, the resist composition of the embodiment may be: (1) may contain an acid generator component (B) (hereinafter, also referred to as "component (B)") that generates acid upon exposure; 2) Component (A) may be a component that generates acid upon exposure; (3) Component (A) may be a component that generates acid upon exposure, and may also contain component (B). That is, in the case of the above (2) or (3), (A) component is "the base material component which generates acid by exposure and changes the solubility to the developer by the action of an acid." When the component (A) is a substrate component that generates an acid through exposure and changes the solubility of the developer through the action of the acid, the component (A1) described later generates an acid through exposure and, through the action of the acid, generates an acid. The polymer compound that changes the solubility of the developing solution due to the action of the polymer compound is preferred. As these polymer compounds, copolymers having a structural unit that generates acid upon exposure can be used. As a structural unit which generates an acid by exposure, a well-known structural unit etc. are mentioned, for example. The resist composition of this embodiment is particularly preferred in the case of (1) above.

<(A)成份> (A)成份,為經由酸之作用而對顯影液之溶解性產生變化的基材成份。 本發明中,「基材成份」為具有膜形成能力之有機化合物,較佳為使用分子量為500以上之有機化合物。該有機化合物之分子量為500以上時,可提高膜形成能力,此外,亦容易形成奈米左右的阻劑圖型。 作為基材成份使用的有機化合物,可大致區分為非聚合物與聚合物。 非聚合物,通常為使用分子量為500以上、未達4000者。以下,稱為「低分子化合物」時,為表示分子量500以上、未達4000的非聚合物之意。 聚合物,通常為使用分子量1000以上者。以下,稱為「樹脂」、「高分子化合物」或「聚合物」時,為表示分子量為1000以上的聚合物之意。 聚合物之分子量,為使用GPC(凝膠滲透層析)依聚苯乙烯換算而得的重量平均分子量。<(A)Ingredient> Component (A) is a substrate component whose solubility in a developer solution changes through the action of an acid. In the present invention, the "substrate component" is an organic compound having film-forming ability, preferably an organic compound with a molecular weight of 500 or more. When the molecular weight of the organic compound is more than 500, the film forming ability can be improved, and in addition, the resist pattern of about nanometer can be easily formed. Organic compounds used as substrate components can be broadly classified into non-polymers and polymers. For non-polymers, those with a molecular weight of 500 or more and less than 4,000 are usually used. Hereinafter, when "low molecular weight compound" is referred to, it means a non-polymer having a molecular weight of 500 or more and less than 4,000. Polymers generally use those with a molecular weight of 1,000 or more. Hereinafter, when referred to as "resin", "high molecular compound" or "polymer", it means a polymer having a molecular weight of 1000 or more. The molecular weight of the polymer is a weight average molecular weight obtained in terms of polystyrene using GPC (gel permeation chromatography).

本實施形態之阻劑組成物中之(A)成份,為含有經由酸之作用而對顯影液之溶解性產生變化的樹脂成份(A1)(以下,亦稱為「(A1)成份」)。 (A)成份中,至少為使用(A1)成份,與該(A1)成份同時,亦可併用其他的高分子化合物及/或低分子化合物。The component (A) in the resist composition of the present embodiment contains a resin component (A1) whose solubility in a developer is changed by the action of an acid (hereinafter also referred to as "component (A1)"). In (A) component, in order to use at least (A1) component, you may use together with this (A1) component, another high molecular compound and/or a low molecular compound.

≪(A1)成份≫ (A1)成份,為具有後述通式(a0)所表示的結構單位(a0)。該(A1)成份,除結構單位(a0)以外,必要時,亦可具有其他結構單位。≪(A1) Ingredients≫ (A1) A component has a structural unit (a0) represented by general formula (a0) mentioned later. The component (A1) may have other structural units as necessary in addition to the structural unit (a0).

本實施形態之阻劑組成物中,因結構單位(a0)含有酸解離性基,故使用該(A1)成份時,因曝光前後的樹脂成份之極性會發生變化,故不僅於鹼顯影製程,甚至於溶劑顯影製程中,於阻劑膜的曝光部與未曝光部之間,亦可得到良好的顯影對比。In the resist composition of this embodiment, since the structural unit (a0) contains an acid dissociative group, when the component (A1) is used, the polarity of the resin component before and after exposure will change, so not only in the alkali developing process, Even in the solvent development process, good development contrast can be obtained between the exposed and unexposed portions of the resist film.

使用於鹼顯影製程時,該(A1)成份,於曝光前對鹼顯影液為難溶性,例如,經由曝光而由(B)成份產生酸時,經由該酸之作用而使極性增大,進而增大對鹼顯影液之溶解性。因此,於阻劑圖型之形成中,對將該阻劑組成物塗佈於支撐體上而得之阻劑膜進行選擇性曝光時,阻劑膜曝光部對鹼顯影液由難溶性而變化為可溶性的同時,阻劑膜未曝光部仍為鹼難溶性而未有變化下,進行鹼顯影時,即可形成正型阻劑圖型。 另一方面,使用於溶劑顯影製程時,該(A1)成份,於曝光前對有機系顯影液為具有高度溶解性,例如,經由曝光而由(B)成份產生酸時,經由該酸之作用而使極性提高,進而降低對有機系顯影液之溶解性。因此,於阻劑圖型之形成中,對將該阻劑組成物塗佈於支撐體上而得之阻劑膜進行選擇性曝光時,阻劑膜曝光部對有機系顯影液由可溶性變化為難溶性的同時,阻劑膜未曝光部仍為可溶性而未有變化下,使用有機系顯影液顯影時,即可形成負型阻劑圖型。When used in the alkali developing process, the (A1) component is insoluble in the alkaline developing solution before exposure. For example, when the acid is generated from the (B) component through exposure, the polarity is increased through the action of the acid, thereby increasing High solubility to alkaline developer. Therefore, when selectively exposing the resist film obtained by coating the resist composition on the support in the formation of the resist pattern, the exposure part of the resist film changes due to the poor solubility of the alkaline developer. While being soluble, the unexposed part of the resist film is still hardly soluble in alkali without any change. When alkali development is performed, a positive resist pattern can be formed. On the other hand, when used in a solvent developing process, the component (A1) has high solubility to the organic developer before exposure, for example, when an acid is generated from the component (B) through exposure, the acid will This increases the polarity, thereby reducing the solubility to organic developer solutions. Therefore, when selectively exposing the resist film obtained by coating the resist composition on the support during the formation of the resist pattern, it is difficult to change the solubility of the exposed part of the resist film to the organic developer. While being soluble, the unexposed part of the resist film is still soluble without any change. When developing with an organic developer, a negative resist pattern can be formed.

結構單位(a0): 結構單位(a0),為下述通式(a0)所表示的結構單位。 結構單位(a0),為含有經由酸之作用而使極性增大之酸分解性基。「酸分解性基」係指,經由酸之作用,而使該酸分解性基的結構中之至少一部份的鍵結形成開裂的具有酸分解性之基之意。結構單位(a0)中,經由酸之作用,使酸解離性基Ra00 與該酸解離性基Ra00 鄰接的羰基氧基(-C(=O)-O-)的氧原子(-O-)之間的鍵結形成開裂,而生成高極性的極性基(羧基),使極性增大。Structural unit (a0): The structural unit (a0) is a structural unit represented by the following general formula (a0). The structural unit (a0) contains an acid-decomposable group whose polarity is increased by the action of an acid. "Acid-decomposable group" means an acid-decomposable group in which at least a part of the bonds in the structure of the acid-decomposable group are cleaved by the action of an acid. In the structural unit (a0) , the oxygen atom (-O- ) to form a bond between cracks, and generate a highly polar polar group (carboxyl group), which increases the polarity.

Figure 02_image011
[式中,R0 為氫原子、碳數1~5之烷基、鹵素原子或碳數1~5之鹵化烷基;Vax0 為單鍵或2價之連結基;Wa為可具有取代基的2價之芳香族烴基;Va0 為可具有醚鍵結的2價之烴基;na0 為0~2之整數;Ra00 為酸解離性基]。
Figure 02_image011
[wherein, R 0 is a hydrogen atom, an alkyl group with 1 to 5 carbons, a halogen atom or a halogenated alkyl group with 1 to 5 carbons; Va x0 is a single bond or a divalent linking group; Wa is an optional substituent 2-valent aromatic hydrocarbon group; Va 0 is a 2-valent hydrocarbon group that may have ether linkage; n a0 is an integer from 0 to 2; Ra 00 is an acid dissociative group].

前述式(a0)中,R0 為氫原子、碳數1~5之烷基、鹵素原子或碳數1~5之鹵化烷基; R0 中之碳數1~5之烷基,以碳數1~5的直鏈狀或支鏈狀之烷基為佳,具體而言,可列舉如:甲基、乙基、丙基、異丙基、n-丁基、異丁基、tert-丁基、戊基、異戊基、新戊基等。 R0 中之鹵素原子,可列舉如:氟原子、氯原子、溴原子、碘原子等,又以氟原子為佳。 R0 中之碳數1~5之鹵化烷基,為前述碳數1~5之烷基的氫原子之一部份或全部被前述鹵素原子取代而得之基。 R0 以氫原子、碳數1~5之烷基、氟原子或碳數1~5之氟化烷基為佳,就工業上取得之容易度,又以氫原子、甲基或氟原子為更佳,以氫原子為特佳。In the aforementioned formula (a0), R 0 is a hydrogen atom, an alkyl group with 1 to 5 carbons, a halogen atom or a halogenated alkyl group with 1 to 5 carbons; the alkyl group with 1 to 5 carbons in R 0 is represented by carbon A linear or branched alkyl group with a number of 1 to 5 is preferred, specifically, methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, tert- Butyl, pentyl, isopentyl, neopentyl, etc. The halogen atom in R 0 includes, for example, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, etc., and a fluorine atom is preferred. The halogenated alkyl group having 1 to 5 carbon atoms in R 0 is a group obtained by substituting part or all of the hydrogen atoms of the alkyl group having 1 to 5 carbon atoms described above with the aforementioned halogen atom. R 0 is preferably a hydrogen atom, an alkyl group with 1 to 5 carbons, a fluorine atom, or a fluorinated alkyl group with 1 to 5 carbons. In terms of the ease of industrial acquisition, a hydrogen atom, a methyl group or a fluorine atom is preferred. More preferably, a hydrogen atom is particularly preferred.

前述式(a0)中,Vax0 為單鍵或2價之連結基; Vax0 的2價之連結基,並未有特別之限定,又以可具有取代基的2價之烴基、含有雜原子的2價之連結基等為較佳之例示。In the aforementioned formula (a0), Va x0 is a single bond or a divalent linking group; the divalent linking group of Va x0 is not particularly limited, and may be a divalent hydrocarbon group that may have a substituent, a heteroatom-containing The divalent linking group etc. are preferable examples.

・可具有取代基的2價之烴基: Vax0 為可具有取代基的2價之烴基時,該烴基,可為脂肪族烴基亦可、芳香族烴基亦可。・Divalent hydrocarbon group which may have a substituent: When Va x0 is a divalent hydrocarbon group which may have a substituent, the hydrocarbon group may be an aliphatic hydrocarbon group or an aromatic hydrocarbon group.

・・Vax0 中之脂肪族烴基 脂肪族烴基係指,不具有芳香族性之烴基之意。該脂肪族烴基,可為飽和者亦可、不飽和者亦可,通常以飽和者為佳。 前述脂肪族烴基,可列舉如:直鏈狀或支鏈狀之脂肪族烴基,或結構中含有環之脂肪族烴基等。・・Aliphatic hydrocarbon group in Va x0 The aliphatic hydrocarbon group means a hydrocarbon group that does not have aromaticity. The aliphatic hydrocarbon group may be saturated or unsaturated, and saturated is generally preferred. The aforementioned aliphatic hydrocarbon group includes, for example, a linear or branched aliphatic hydrocarbon group, or an aliphatic hydrocarbon group containing a ring in its structure, and the like.

・・・直鏈狀或支鏈狀之脂肪族烴基 該直鏈狀之脂肪族烴基,以碳數為1~10為佳,以碳數1~6為較佳,以碳數1~4為更佳,以碳數1~3為最佳。 直鏈狀之脂肪族烴基,以直鏈狀之伸烷基為佳,具體而言,可列舉如:伸甲基[-CH2 -]、伸乙基[-(CH2 )2 -]、伸三甲基[-(CH2 )3 -]、伸四甲基[-(CH2 )4 -]、伸五甲基[-(CH2 )5 -]等。 該支鏈狀之脂肪族烴基,以碳數2~10為佳,以碳數3~6為較佳,以碳數3或4為更佳,以碳數3為最佳。 支鏈狀之脂肪族烴基,以支鏈狀之伸烷基為佳,具體而言,可列舉如:-CH(CH3 )-、-CH(CH2 CH3 )-、-C(CH3 )2 -、 -C(CH3 )(CH2 CH3 )-、-C(CH3 )(CH2 CH2 CH3 )-、-C(CH2 CH3 )2 - 等之烷基伸甲基;-CH(CH3 )CH2 -、-CH(CH3 )CH(CH3 )-、 -C(CH3 )2 CH2 -、-CH(CH2 CH3 )CH2 -、-C(CH2 CH3 )2 -CH2 -等之烷基伸乙基;-CH(CH3 )CH2 CH2 -、-CH2 CH(CH3 )CH2 -等之烷基伸三甲基;-CH(CH3 )CH2 CH2 CH2 -、-CH2 CH(CH3 )CH2 CH2 - 等之烷基伸四甲基等之烷基伸烷基等。烷基伸烷基中之烷基,以碳數1~5之直鏈狀之烷基為佳。・・・Straight-chain or branched aliphatic hydrocarbon group The straight-chain aliphatic hydrocarbon group preferably has 1 to 10 carbons, more preferably 1 to 6 carbons, and preferably 1 to 4 carbons More preferably, the carbon number is 1-3. Straight-chain aliphatic hydrocarbon groups are preferably straight-chain alkylene groups. Specifically, examples include: methylene [-CH 2 -], ethylene [-(CH 2 ) 2 -], Trimethyl[-(CH 2 ) 3 -], Tetramethyl[-(CH 2 ) 4 -], Pentamethyl[-(CH 2 ) 5 -], etc. The branched aliphatic hydrocarbon group preferably has 2 to 10 carbons, more preferably 3 to 6 carbons, more preferably 3 or 4 carbons, most preferably 3 carbons. Branched-chain aliphatic hydrocarbon groups are preferably branched-chain alkylene groups. Specifically, examples include: -CH(CH 3 )-, -CH(CH 2 CH 3 )-, -C(CH 3 ) 2 -, -C(CH 3 )(CH 2 CH 3 )-, -C(CH 3 )(CH 2 CH 2 CH 3 )-, -C(CH 2 CH 3 ) 2 - etc. ; -CH(CH 3 )CH 2 -, -CH(CH 3 )CH(CH 3 )-, -C(CH 3 ) 2 CH 2 -, -CH(CH 2 CH 3 )CH 2 -, -C( CH 2 CH 3 ) 2 -CH 2 - and other alkyl ethylene groups; -CH(CH 3 ) CH 2 CH 2 -, -CH 2 CH(CH 3 ) CH 2 - and other alkyl trimethyl groups; -CH (CH 3 )CH 2 CH 2 CH 2 -, -CH 2 CH(CH 3 )CH 2 CH 2 -, alkylene such as tetramethylene, alkylene such as tetramethyl, etc. The alkyl group in the alkylene group is preferably a linear alkyl group having 1 to 5 carbon atoms.

前述直鏈狀或支鏈狀之脂肪族烴基,可具有取代基亦可、不具有取代基亦可。該取代基,可列舉如:氟原子、被氟原子取代的碳數1~5之氟化烷基、羰基等。The aforementioned linear or branched aliphatic hydrocarbon group may or may not have a substituent. The substituent includes, for example, a fluorine atom, a fluorinated alkyl group having 1 to 5 carbon atoms substituted by a fluorine atom, a carbonyl group, and the like.

・・・結構中含有環之脂肪族烴基 該結構中含有環之脂肪族烴基,可列舉如:環結構中可含有含雜原子之取代基的環狀之脂肪族烴基(由脂肪族烴環去除2個氫原子而得之基)、前述環狀之脂肪族烴基鍵結於直鏈狀或支鏈狀之脂肪族烴基的末端而得之基、前述環狀之脂肪族烴基介於直鏈狀或支鏈狀之脂肪族烴基中間而得之基等。其例如與前述所說明的直鏈狀或支鏈狀之脂肪族烴基為相同之內容。 環狀之脂肪族烴基,以碳數3~20為佳,以碳數3~12為較佳。 環狀之脂肪族烴基,可為多環式基亦可、單環式基亦可。單環式之脂環式烴基,以由單環鏈烷去除2個氫原子而得之基為佳。該單環鏈烷,以碳數3~6者為佳,具體而言,可列舉如:環戊烷、環己烷等。多環式之脂環式烴基,以由多環鏈烷去除2個氫原子而得之基為佳,該多環鏈烷,以碳數7~12者為佳,具體而言,可列舉如:金剛烷、降莰烷、異莰烷、三環癸烷、四環十二烷等。・・・Aliphatic hydrocarbon group containing a ring in the structure The aliphatic hydrocarbon group containing a ring in the structure includes, for example, a cyclic aliphatic hydrocarbon group (a group obtained by removing two hydrogen atoms from an aliphatic hydrocarbon ring) that may contain a heteroatom-containing substituent in the ring structure, the aforementioned A cyclic aliphatic hydrocarbon group bonded to the end of a straight-chain or branched aliphatic hydrocarbon group, and the aforementioned cyclic aliphatic hydrocarbon group interposed between a straight-chain or branched aliphatic hydrocarbon group The foundation and so on. It is, for example, the same as the linear or branched aliphatic hydrocarbon group described above. The cyclic aliphatic hydrocarbon group preferably has 3-20 carbons, more preferably 3-12 carbons. The cyclic aliphatic hydrocarbon group may be a polycyclic group or a monocyclic group. The monocyclic alicyclic hydrocarbon group is preferably a group obtained by removing two hydrogen atoms from a monocyclic alkane. The monocyclic alkanes preferably have 3 to 6 carbon atoms, and specific examples include cyclopentane and cyclohexane. The polycyclic alicyclic hydrocarbon group is preferably a group obtained by removing two hydrogen atoms from a polycyclic alkane, and the polycyclic alkane preferably has 7 to 12 carbon atoms. Specifically, examples include: : Adamantane, Norbornane, Isobornane, Tricyclodecane, Tetracyclododecane, etc.

環狀之脂肪族烴基,可具有取代基亦可、不具有取代基亦可。該取代基,可列舉如:烷基、烷氧基、鹵素原子、鹵化烷基、羥基、羰基等。 前述作為取代基之烷基,以碳數1~5之烷基為佳,以甲基、乙基、丙基、n-丁基、tert-丁基為較佳。 前述作為取代基之烷氧基,以碳數1~5之烷氧基為佳,以甲氧基、乙氧基、n-丙氧基、iso-丙氧基、n-丁氧基、tert-丁氧基為較佳,以甲氧基、乙氧基為更佳。 前述作為取代基之鹵素原子,可列舉如:氟原子、氯原子、溴原子、碘原子等,又以氟原子為佳。 前述作為取代基之鹵化烷基,可列舉如:前述烷基的氫原子之一部份或全部被前述鹵素原子取代而得之基等。 環狀之脂肪族烴基中,構成其環結構的碳原子之一部份可被含有雜原子的取代基所取代。該含有雜原子的取代基,以-O-、-C(=O)-O-、-S-、-S(=O)2 -、-S(=O)2 -O-為佳。The cyclic aliphatic hydrocarbon group may or may not have a substituent. Examples of such substituents include alkyl groups, alkoxy groups, halogen atoms, halogenated alkyl groups, hydroxyl groups, and carbonyl groups. The aforementioned alkyl group as a substituent is preferably an alkyl group having 1 to 5 carbon atoms, more preferably a methyl group, ethyl group, propyl group, n-butyl group, or tert-butyl group. The aforementioned alkoxy group as a substituent is preferably an alkoxy group with 1 to 5 carbon atoms, such as methoxy, ethoxy, n-propoxy, iso-propoxy, n-butoxy, tert -Butoxy group is preferred, and methoxy group and ethoxy group are more preferred. The aforementioned halogen atom as a substituent includes, for example, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, etc., and a fluorine atom is preferred. Examples of the aforementioned halogenated alkyl group as a substituent include groups in which a part or all of the hydrogen atoms of the aforementioned alkyl group are substituted with the aforementioned halogen atoms. In the cyclic aliphatic hydrocarbon group, some of the carbon atoms constituting the ring structure may be substituted by substituents containing heteroatoms. The heteroatom-containing substituent is preferably -O-, -C(=O)-O-, -S-, -S(=O) 2 -, -S(=O) 2 -O-.

・・Vax0 中之芳香族烴基 該芳香族烴基,為至少具有1個芳香環的烴基。 該芳香環,只要為具有4n+2個π電子的環狀共軛系時,則未有特別之限定,其可為單環式亦可、多環式亦可。芳香環之碳數以5~30為佳,以碳數5~20為較佳,以碳數6~15為更佳,以碳數6~10為特佳。但,該碳數中,為不包含取代基中之碳數者。 芳香環,具體而言,可列舉如:苯、萘、蒽、菲等之芳香族烴環;構成前述芳香族烴環的碳原子中之一部份被雜原子取代而得之芳香族雜環等。芳香族雜環中之雜原子,可列舉如:氧原子、硫原子、氮原子等。芳香族雜環,具體而言,可列舉如:吡啶環、噻吩環等。 芳香族烴基,具體而言,可列舉如:由前述芳香族烴環或芳香族雜環去除2個氫原子而得之基(伸芳基或雜伸芳基);由含有2個以上之芳香環的芳香族化合物(例如聯苯、茀等)去除2個氫原子而得之基;由前述芳香族烴環或芳香族雜環去除1個氫原子而得之基(芳基或雜芳基)的氫原子中之1個被伸烷基取代而得之基(例如:由苄基、苯乙基、1-萘基甲基、2-萘基甲基、1-萘基乙基、2-萘基乙基等之芳烷基中的芳基再去除1個氫原子而得之基)等。前述芳基或雜芳基鍵結的伸烷基之碳數,以1~4為佳,以碳數1~2為較佳,以碳數1為特佳。・・Aromatic hydrocarbon group in Va x0 The aromatic hydrocarbon group is a hydrocarbon group having at least one aromatic ring. The aromatic ring is not particularly limited as long as it is a cyclic conjugated system having 4n+2 π electrons, and it may be monocyclic or polycyclic. The carbon number of the aromatic ring is preferably 5-30, more preferably 5-20, more preferably 6-15, particularly preferably 6-10. However, the carbon number does not include the carbon number in the substituent. Aromatic rings, specifically, include aromatic hydrocarbon rings such as benzene, naphthalene, anthracene, and phenanthrene; aromatic heterocyclic rings in which some of the carbon atoms constituting the aforementioned aromatic hydrocarbon rings are replaced by heteroatoms wait. The hetero atom in the aromatic heterocycle includes, for example, an oxygen atom, a sulfur atom, a nitrogen atom, and the like. The aromatic heterocycle specifically includes, for example, a pyridine ring, a thiophene ring, and the like. Aromatic hydrocarbon groups, specifically, include: groups obtained by removing two hydrogen atoms from the aforementioned aromatic hydrocarbon ring or aromatic heterocyclic ring (aryl or heteroaryl); aromatic groups containing two or more The group obtained by removing 2 hydrogen atoms from the ring aromatic compound (such as biphenyl, fennel, etc.); the group obtained by removing 1 hydrogen atom from the aforementioned aromatic hydrocarbon ring or aromatic heterocycle (aryl or heteroaryl ) in which one of the hydrogen atoms is replaced by an alkylene group (for example: benzyl, phenethyl, 1-naphthylmethyl, 2-naphthylmethyl, 1-naphthylethyl, 2 - a group obtained by removing one hydrogen atom from an aryl group in an aralkyl group such as naphthylethyl group), etc. The aforementioned aryl or heteroaryl-bonded alkylene group preferably has 1 to 4 carbon atoms, more preferably 1 to 2 carbon atoms, and particularly preferably 1 carbon atom.

前述芳香族烴基中,該芳香族烴基所具有的氫原子,可被取代基所取代。例如:該芳香族烴基中之芳香環鍵結的氫原子,可被取代基所取代。該取代基,可列舉如:烷基、烷氧基、鹵素原子、鹵化烷基、羥基等。 前述作為取代基之烷基,以碳數1~5之烷基為佳,以甲基、乙基、丙基、n-丁基、tert-丁基為較佳。 前述作為取代基之烷氧基、鹵素原子及鹵化烷基,可列舉如:被列舉作為取代前述環狀脂肪族烴基所具有的氫原子之取代基者。In the aforementioned aromatic hydrocarbon group, the hydrogen atom contained in the aromatic hydrocarbon group may be substituted with a substituent. For example: the hydrogen atom bonded to the aromatic ring in the aromatic hydrocarbon group may be replaced by a substituent. Examples of such substituents include alkyl groups, alkoxy groups, halogen atoms, halogenated alkyl groups, and hydroxyl groups. The aforementioned alkyl group as a substituent is preferably an alkyl group having 1 to 5 carbon atoms, more preferably a methyl group, ethyl group, propyl group, n-butyl group, or tert-butyl group. Examples of the alkoxy group, a halogen atom, and a halogenated alkyl group as the substituent include those that are exemplified as substituents for substituting the hydrogen atom contained in the cycloaliphatic hydrocarbon group.

・含有雜原子的2價之連結基: Vax0 為含有雜原子的2價之連結基時,該連結基之較佳者,可列舉如:-O-、-C(=O)-O-、-O-C(=O)-、-C(=O)-、 -O-C(=O)-O-、-C(=O)-NH-、-NH-、-NH-C(=NH)-(H可被烷基、醯基等的取代基所取代)、-S-、-S(=O)2 -、-S(=O)2 -O-、通式-Y21 -O-Y22 -、-Y21 -O-、-Y21 -C(=O)-O-、-C(=O)-O-Y21 -、 -[Y21 -C(=O)-O]m” -Y22 -、-Y21 -O-C(=O)-Y22 -或-Y21 -S(=O)2 -O-Y22 - 所表示之基[式中,Y21 及Y22 各別獨立為可具有取代基的2價之烴基,O為氧原子,m”為0~3之整數]等。 前述含有雜原子的2價之連結基為-C(=O)-NH-、 -C(=O)-NH-C(=O)-、-NH-、-NH-C(=NH)-時,該H可被烷基、醯基等的取代基所取代。該取代基(烷基、醯基等),以碳數為1~10為佳,以1~8為更佳,以1~5為特佳。 通式-Y21 -O-Y22 -、-Y21 -O-、-Y21 -C(=O)-O-、-C(=O)-O-Y21 -、 -[Y21 -C(=O)-O]m” -Y22 -、-Y21 -O-C(=O)-Y22 -或-Y21 -S(=O)2 -O-Y22 - 中,Y21 及Y22 各別獨立為可具有取代基的2價之烴基。該2價之烴基,例如:與前述Yax1 中,說明2價之連結基時所列舉的(可具有取代基的2價之烴基)為相同之內容。 Y21 以直鏈狀之脂肪族烴基為佳,以直鏈狀之伸烷基為較佳,以碳數1~5之直鏈狀之伸烷基為更佳,以伸甲基或伸乙基為特佳。 Y22 以直鏈狀或支鏈狀之脂肪族烴基為佳,以伸甲基、伸乙基或烷基伸甲基為較佳。該烷基伸甲基中之烷基,以碳數1~5之直鏈狀之烷基為佳,以碳數1~3之直鏈狀之烷基為較佳,以甲基為最佳。 式-[Y21 -C(=O)-O]m” -Y22 -所表示之基中,m”為0~3之整數,又以0~2之整數為佳,以0或1為較佳,以1為特佳。即,式-[Y21 -C(=O)-O]m” -Y22 -所表示之基,以式 -Y21 -C(=O)-O-Y22 -所表示之基為特佳。其中,又以式 -(CH2 )a’ -C(=O)-O-(CH2 )b’ -所表示之基為佳。該式中,a’為1~10之整數,又以1~8之整數為佳,以1~5之整數為較佳,以1或2為更佳,以1為最佳。b’為1~10之整數,又以1~8之整數為佳,以1~5之整數為較佳,以1或2為更佳,以1為最佳。・Divalent linking group containing a heteroatom: When Va x0 is a divalent linking group containing a heteroatom, the preferred examples of the linking group include: -O-, -C(=O)-O- , -OC(=O)-, -C(=O)-, -OC(=O)-O-, -C(=O)-NH-, -NH-, -NH-C(=NH)- (H can be substituted by substituents such as alkyl, acyl, etc.), -S-, -S(=O) 2 -, -S(=O) 2 -O-, general formula -Y 21 -OY 22 - , -Y 21 -O-, -Y 21 -C(=O)-O-, -C(=O)-OY 21 -, -[Y 21 -C(=O)-O] m” -Y 22 -, -Y 21 -OC(=O)-Y 22 -or -Y 21 -S(=O) 2 -OY 22 - The group represented by [wherein, Y 21 and Y 22 are independently substituted A divalent hydrocarbon group, O is an oxygen atom, m" is an integer from 0 to 3], etc. The aforementioned divalent linking groups containing heteroatoms are -C(=O)-NH-, -C(=O)-NH-C(=O)-, -NH-, -NH-C(=NH)- When , this H may be substituted by a substituent such as an alkyl group or an acyl group. The substituent (alkyl group, acyl group, etc.) preferably has 1-10 carbon atoms, more preferably 1-8 carbon atoms, and particularly preferably 1-5 carbon atoms. General formula -Y 21 -OY 22 -, -Y 21 -O-, -Y 21 -C(=O)-O-, -C(=O)-OY 21 -, -[Y 21 -C(=O )-O] m” -Y 22 -, -Y 21 -OC(=O)-Y 22 - or -Y 21 -S(=O) 2 -OY 22 -, Y 21 and Y 22 are independently A divalent hydrocarbon group which may have a substituent. The divalent hydrocarbon group is, for example, the same as the (divalent hydrocarbon group which may have a substituent) listed when describing the divalent linking group in Ya x1 above. Y 21 is preferably a straight-chain aliphatic hydrocarbon group, preferably a straight-chain alkylene group, more preferably a straight-chain alkylene group with 1 to 5 carbons, and preferably a straight-chain alkylene group with a carbon number of 1-5. The base is particularly preferred. Y22 is preferably a straight-chain or branched aliphatic hydrocarbon group, preferably a methylene group, an ethylidene group or an alkylene group. The alkyl group in the alkylene group is preferably A linear alkyl group with 1 to 5 carbons is preferred, a linear alkyl group with 1 to 3 carbons is preferred, and methyl is the most preferred. Formula -[Y 21 -C(=O) -O] m” -Y 22 - Among the bases represented, m” is an integer of 0 to 3, preferably an integer of 0 to 2, preferably 0 or 1, and particularly preferably 1. That is, The group represented by the formula -[Y 21 -C(=O)-O] m” -Y 22 - is particularly preferably represented by the formula -Y 21 -C(=O)-OY 22 -. Among them, the group represented by the formula -(CH 2 ) a' -C(=O)-O-(CH 2 ) b' - is preferable. In the formula, a' is an integer of 1-10, preferably an integer of 1-8, more preferably an integer of 1-5, more preferably 1 or 2, and most preferably 1. b' is an integer of 1-10, preferably an integer of 1-8, more preferably an integer of 1-5, more preferably 1 or 2, and most preferably 1.

上述之中,Vax0 又以單鍵、酯鍵結[-C(=O)-O-、 -O-C(=O)-]、醚鍵結(-O-)、直鏈狀或支鏈狀之伸烷基,或該些之組合為佳,以單鍵、酯鍵結[-C(=O)-O-、-O-C(=O)-] 為較佳,以單鍵為更佳。Among the above, Va x0 is single bonded, ester bonded [-C(=O)-O-, -OC(=O)-], ether bonded (-O-), linear or branched An alkylene group, or a combination thereof is preferred, a single bond or an ester bond [-C(=O)-O-, -OC(=O)-] is preferred, and a single bond is more preferred.

前述式(a0)中,Wa為可具有取代基的2價之芳香族烴基; Wa中之芳香族烴基,可列舉如:由芳香環去除2個氫原子而得之基等。此處之芳香環,只要為具有4n+2個的π電子之環狀共軛系時,則未有特別之限定,其可為單環式亦可、多環式亦可。芳香環之碳數以5~30為佳,以碳數5~20為較佳,以碳數6~15為更佳,以碳數6~10為特佳。該芳香環,具體而言,可列舉如:苯、萘、蒽、菲等之芳香族烴環;構成前述芳香族烴環的碳原子中之一部份被雜原子取代而得之芳香族雜環等。芳香族雜環中之雜原子,可列舉如:氧原子、硫原子、氮原子等。芳香族雜環,具體而言,可列舉如:吡啶環、噻吩環等。 又,Wa中之芳香族烴基,又可列舉如:由含有2個以上的芳香環之芳香族化合物(例如聯苯、茀等)去除2個氫原子而得之基等。 上述之中,Wa又以由苯、萘、蒽或聯苯去除2個氫原子而得之基為佳,以由苯或萘去除2個氫原子而得之基(即,伸苯基或伸萘基)為較佳,由苯去除2個氫原子而得之基(即,伸苯基)為更佳。In the aforementioned formula (a0), Wa is a divalent aromatic hydrocarbon group which may have a substituent; The aromatic hydrocarbon group in Wa includes, for example, a group obtained by removing two hydrogen atoms from an aromatic ring, and the like. The aromatic ring here is not particularly limited as long as it is a cyclic conjugated system having 4n+2 π electrons, and it may be monocyclic or polycyclic. The carbon number of the aromatic ring is preferably 5-30, more preferably 5-20, more preferably 6-15, particularly preferably 6-10. Specifically, the aromatic rings include aromatic hydrocarbon rings such as benzene, naphthalene, anthracene, and phenanthrene; Ring etc. The hetero atom in the aromatic heterocycle includes, for example, an oxygen atom, a sulfur atom, a nitrogen atom, and the like. The aromatic heterocycle specifically includes, for example, a pyridine ring, a thiophene ring, and the like. In addition, the aromatic hydrocarbon group in Wa also includes, for example, a group obtained by removing two hydrogen atoms from an aromatic compound (such as biphenyl, fennel, etc.) containing two or more aromatic rings. Among the above, Wa is preferably a group obtained by removing 2 hydrogen atoms from benzene, naphthalene, anthracene or biphenyl, and a group obtained by removing 2 hydrogen atoms from benzene or naphthalene (that is, phenylene or phenylene). Naphthyl) is preferable, and a group obtained by removing two hydrogen atoms from benzene (ie, phenylene) is more preferable.

Wa的2價之芳香族烴基可具有的取代基,可列舉如:碳數1~5之直鏈或支鏈狀之烷基、鹵素原子、碳數1~5之直鏈或支鏈狀之鹵化烷基等。 碳數1~5之直鏈或支鏈狀之烷基,可列舉如:甲基、乙基、丙基、異丙基、n-丁基、異丁基、tert-丁基、戊基、異戊基、新戊基等,又以甲基為佳。 鹵素原子,可列舉如:氟原子、氯原子、溴原子、碘原子等,又以氟原子為佳。 碳數1~5之鹵化烷基,為前述碳數1~5之烷基的氫原子之一部份或全部被前述鹵素原子取代而得之基。The substituents that the divalent aromatic hydrocarbon group of Wa may have include, for example, straight-chain or branched-chain alkyl groups having 1 to 5 carbon atoms, halogen atoms, and straight-chain or branched-chain alkyl groups having 1 to 5 carbon atoms. Haloalkyl, etc. Straight-chain or branched-chain alkyl groups with 1 to 5 carbons, such as: methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, tert-butyl, pentyl, Isopentyl, neopentyl, etc., and methyl is preferred. The halogen atom includes, for example, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, etc., and a fluorine atom is preferred. The halogenated alkyl group having 1 to 5 carbons is a group obtained by substituting part or all of the hydrogen atoms of the alkyl group having 1 to 5 carbons with the aforementioned halogen atom.

前述式(a0)中,Vax1 為可具有醚鍵結的2價之烴基;Vax1 中的2價之烴基,可為脂肪族烴基亦可、芳香族烴基亦可。In the aforementioned formula (a0), Va x1 is a divalent hydrocarbon group which may have an ether bond; the divalent hydrocarbon group in Va x1 may be an aliphatic hydrocarbon group or an aromatic hydrocarbon group.

Vax1 中作為2價之烴基之脂肪族烴基,可為飽和者亦可、不飽和者亦可,通常以飽和者為佳。 該脂肪族烴基,更具體而言,可列舉如:直鏈狀或支鏈狀之脂肪族烴基,或結構中含有環之脂肪族烴基等。The aliphatic hydrocarbon group as the divalent hydrocarbon group in Va x1 may be saturated or unsaturated, but usually saturated is preferred. More specifically, the aliphatic hydrocarbon group includes, for example, a linear or branched aliphatic hydrocarbon group, or an aliphatic hydrocarbon group having a ring in its structure, and the like.

前述直鏈狀之脂肪族烴基,以碳數為1~10為佳,以1~6為較佳,以1~4為更佳,以1~3為最佳。 直鏈狀之脂肪族烴基,以直鏈狀之伸烷基為佳,具體而言,可列舉如:伸甲基[-CH2 -]、伸乙基[-(CH2 )2 -]、伸三甲基[-(CH2 )3 -]、伸四甲基[-(CH2 )4 -]、伸五甲基[-(CH2 )5 -] 等。 前述支鏈狀之脂肪族烴基,以碳數2~10為佳,以3~6為較佳,以3或4為更佳,以3為最佳。 支鏈狀之脂肪族烴基,以支鏈狀之伸烷基為佳,具體而言,可列舉如:-CH(CH3 )-、-CH(CH2 CH3 )-、-C(CH3 )2 -、 -C(CH3 )(CH2 CH3 )-、-C(CH3 )(CH2 CH2 CH3 )-、-C(CH2 CH3 )2 -等之烷基伸甲基;-CH(CH3 )CH2 -、-CH(CH3 )CH(CH3 )-、-C(CH3 )2 CH2 -、 -CH(CH2 CH3 )CH2 -、-C(CH2 CH3 )2 -CH2 -等之烷基伸乙基; -CH(CH3 )CH2 CH2 -、-CH2 CH(CH3 )CH2 -等之烷基伸三甲基;-CH(CH3 )CH2 CH2 CH2 -、-CH2 CH(CH3 )CH2 CH2 -等之烷基伸四甲基等之烷基伸烷基等。烷基伸烷基中之烷基,以碳數1~5之直鏈狀之烷基為佳。The aforementioned linear aliphatic hydrocarbon group preferably has 1-10 carbon atoms, more preferably 1-6 carbon atoms, more preferably 1-4 carbon atoms, most preferably 1-3 carbon atoms. Straight-chain aliphatic hydrocarbon groups are preferably straight-chain alkylene groups. Specifically, examples include: methylene [-CH 2 -], ethylene [-(CH 2 ) 2 -], Trimethyl[-(CH 2 ) 3 -], Tetramethyl[-(CH 2 ) 4 -], Pentamethyl[-(CH 2 ) 5 -], etc. The aforementioned branched aliphatic hydrocarbon group preferably has 2-10 carbon atoms, more preferably 3-6 carbon atoms, more preferably 3 or 4 carbon atoms, and most preferably 3 carbon atoms. Branched-chain aliphatic hydrocarbon groups are preferably branched-chain alkylene groups. Specifically, examples include: -CH(CH 3 )-, -CH(CH 2 CH 3 )-, -C(CH 3 ) 2 -, -C(CH 3 )(CH 2 CH 3 )-, -C(CH 3 )(CH 2 CH 2 CH 3 )-, -C(CH 2 CH 3 ) 2 -, etc. ; -CH(CH 3 )CH 2 -, -CH(CH 3 )CH(CH 3 )-, -C(CH 3 ) 2 CH 2 -, -CH(CH 2 CH 3 )CH 2 -, -C( CH 2 CH 3 ) 2 -CH 2 - and other alkyl ethylene groups; -CH(CH 3 ) CH 2 CH 2 -, -CH 2 CH(CH 3 ) CH 2 - and other alkyl trimethyl groups; -CH (CH 3 )CH 2 CH 2 CH 2 -, -CH 2 CH(CH 3 )CH 2 CH 2 -, alkylene such as tetramethyl, alkylene such as tetramethyl, etc. The alkyl group in the alkylene group is preferably a linear alkyl group having 1 to 5 carbon atoms.

前述結構中含有環之脂肪族烴基,可列舉如:脂環式烴基(由脂肪族烴環去除2個氫原子而得之基)、脂環式烴基鍵結於直鏈狀或支鏈狀之脂肪族烴基的末端而得之基、脂環式烴基介於直鏈狀或支鏈狀之脂肪族烴基中間而得之基等。前述直鏈狀或支鏈狀之脂肪族烴基,例如:與前述直鏈狀之脂肪族烴基或前述支鏈狀之脂肪族烴基為相同之內容。 前述脂環式烴基,以碳數3~20為佳,以3~12為較佳。 前述脂環式烴基,可為多環式亦可、單環式亦可。單環式之脂環式烴基,以由單環鏈烷去除2個氫原子而得之基為佳。該單環鏈烷以碳數3~6者為佳,具體而言,可列舉如:環戊烷、環己烷等。多環式之脂環式烴基,以由多環鏈烷去除2個氫原子而得之基為佳,該多環鏈烷以碳數7~12者為佳,具體而言,可列舉如:金剛烷、降莰烷、異莰烷、三環癸烷、四環十二烷等。Examples of aliphatic hydrocarbon groups containing rings in the aforementioned structure include: alicyclic hydrocarbon groups (groups obtained by removing two hydrogen atoms from an aliphatic hydrocarbon ring), alicyclic hydrocarbon groups bonded to straight or branched chains A group obtained at the end of an aliphatic hydrocarbon group, a group obtained by interposing an alicyclic hydrocarbon group in the middle of a linear or branched aliphatic hydrocarbon group, etc. The aforementioned straight-chain or branched aliphatic hydrocarbon group is, for example, the same as the aforementioned straight-chain aliphatic hydrocarbon group or the aforementioned branched-chain aliphatic hydrocarbon group. The aforementioned alicyclic hydrocarbon group preferably has 3-20 carbon atoms, more preferably 3-12 carbon atoms. The aforementioned alicyclic hydrocarbon group may be polycyclic or monocyclic. The monocyclic alicyclic hydrocarbon group is preferably a group obtained by removing two hydrogen atoms from a monocyclic alkane. The monocyclic alkane preferably has 3 to 6 carbon atoms, specifically, cyclopentane, cyclohexane, etc. can be mentioned. The polycyclic alicyclic hydrocarbon group is preferably a group obtained by removing two hydrogen atoms from a polycyclic alkane, and the polycyclic alkane preferably has 7 to 12 carbon atoms. Specifically, examples include: Adamantane, norbornane, isobornane, tricyclodecane, tetracyclododecane, etc.

Vax1 中作為2價之烴基的芳香族烴基,為具有芳香環之烴基。 該芳香族烴基,以碳數3~30為佳,以5~30為較佳,以5~20為更佳,以6~15為特佳,以6~10為最佳。但,該碳數中,為不包含取代基中之碳數者。 芳香族烴基所具有的芳香環,具體而言,可列舉如:苯、聯苯、茀、萘、蒽、菲等之芳香族烴環;構成前述芳香族烴環的碳原子中之一部份被雜原子取代而得之芳香族雜環等。芳香族雜環中之雜原子,可列舉如:氧原子、硫原子、氮原子等。 該芳香族烴基,具體而言,可列舉如:由前述芳香族烴環去除2個氫原子而得之基(伸芳基);由前述芳香族烴環去除1個氫原子而得之基(芳基)的氫原子中之1個被伸烷基取代而得之基(例如:由苄基、苯乙基、1-萘基甲基、2-萘基甲基、1-萘基乙基、2-萘基乙基等之芳烷基中的芳基再去除1個氫原子而得之基)等。前述伸烷基(芳烷基中之烷鏈)之碳數,以1~4為佳,以1~2為較佳,以1為特佳。The aromatic hydrocarbon group which is a divalent hydrocarbon group in Va x1 is a hydrocarbon group having an aromatic ring. The aromatic hydrocarbon group preferably has 3-30 carbon atoms, more preferably 5-30 carbon atoms, more preferably 5-20 carbon atoms, particularly preferably 6-15 carbon atoms, most preferably 6-10 carbon atoms. However, the carbon number does not include the carbon number in the substituent. Aromatic rings possessed by aromatic hydrocarbon groups, specifically, aromatic hydrocarbon rings such as benzene, biphenyl, fennel, naphthalene, anthracene, phenanthrene, etc.; a part of the carbon atoms constituting the aforementioned aromatic hydrocarbon rings Aromatic heterocycles substituted by heteroatoms, etc. The hetero atom in the aromatic heterocycle includes, for example, an oxygen atom, a sulfur atom, a nitrogen atom, and the like. The aromatic hydrocarbon group specifically includes, for example: a group obtained by removing two hydrogen atoms from the above-mentioned aromatic hydrocarbon ring (arylene group); a group obtained by removing one hydrogen atom from the above-mentioned aromatic hydrocarbon ring ( Aryl) in which one of the hydrogen atoms is replaced by an alkylene group (for example: benzyl, phenethyl, 1-naphthylmethyl, 2-naphthylmethyl, 1-naphthylethyl , 2-naphthylethyl and other aralkyl groups obtained by removing one hydrogen atom from the aryl group) and the like. The number of carbon atoms in the aforementioned alkylene group (the alkyl chain in the aralkyl group) is preferably 1-4, more preferably 1-2, and particularly preferably 1.

前述式(a0)中,na0 為0~2之整數,以0或1為佳,以0為較佳。In the aforementioned formula (a0), n a0 is an integer of 0 to 2, preferably 0 or 1, more preferably 0.

前述式(a0)中,Ra00 為酸解離性基; 此處之「酸解離性基」係指:(i)經由酸之作用,而使該酸解離性基與該酸解離性基鄰接的原子之間的鍵結形成開裂之具有酸解離性之基,或(ii)經由酸之作用而使一部份鍵結形成開裂之後,再經由所產生的去碳酸反應,使該酸解離性基與該酸解離性基鄰接的原子之間的鍵結形成開裂之基,等二者。 構成酸分解性基的酸解離性基,必須具有較該酸解離性基經解離而生成的極性基為更低極性之基,如此,經由酸之作用而使該酸解離性基解離之際,會生成較該酸解離性基更高極性的極性基,而增大極性。其結果將使(A1)成份全體之極性增大。極性增大結果,相對地使對顯影液之溶解性發生變化,於顯影液為鹼顯影液時會增大溶解性,於顯影液為有機系顯影液時則會降低溶解性。In the aforementioned formula (a0), Ra 00 is an acid dissociative group; the "acid dissociative group" here refers to: (i) through the action of an acid, the acid dissociative group is adjacent to the acid dissociative group Acid-dissociable groups that form bonds between atoms, or (ii) part of the bonds are formed by the action of an acid, and then the acid-dissociable groups are made Bonds between atoms adjacent to the acid-dissociative group form the cleavage group, and so on. The acid-dissociable group constituting the acid-dissociable group must have a lower polarity than the polar group formed by dissociation of the acid-dissociable group. A polar group having a higher polarity than the acid dissociative group is generated to increase the polarity. As a result, the polarity of the (A1) component will increase as a whole. As a result of the increase in polarity, the solubility to the developer is relatively changed. When the developer is an alkaline developer, the solubility will be increased, and when the developer is an organic developer, the solubility will be reduced.

Ra00 之酸解離性基,例如:可使用目前為止被提案作為化學增強型阻劑組成物用的基底樹脂之酸解離性基者。 被提案作為化學增強型阻劑組成物用的基底樹脂之酸解離性基者,具體而言,可列舉如:以下說明之「縮醛型酸解離性基」、「三級烷酯型酸解離性基」、「三級烷氧羰基酸解離性基等。The acid dissociative group of Ra 00 , for example, can be used as the acid dissociative group of the base resin proposed so far as the chemically amplified resist composition. Those proposed as the acid-dissociative group of the base resin for the chemically amplified resist composition specifically include the "acetal-type acid-dissociative group" and "tertiary alkyl ester-type acid-dissociative groups" described below. Sexual group", "tertiary alkoxycarbonyl acid dissociative group, etc.

・縮醛型酸解離性基: 前述極性基中,保護羧基或羥基的酸解離性基,可列舉如:下述通式(a1-r-1)所表示之酸解離性基(以下,亦稱為「縮醛型酸解離性基」)等。・Acetal type acid dissociative group: Among the aforementioned polar groups, the acid-dissociating groups that protect carboxyl or hydroxyl groups include, for example, acid-dissociating groups represented by the following general formula (a1-r-1) (hereinafter also referred to as "acetal-type acid-dissociating groups"). Base") and so on.

Figure 02_image013
[式中,Ra’1 、Ra’2 為氫原子或烷基;Ra’3 為烴基,且Ra’3 可與Ra’1 、Ra’2 之任一者鍵結而形成環]。
Figure 02_image013
[wherein, Ra' 1 and Ra' 2 are hydrogen atoms or alkyl groups; Ra' 3 is a hydrocarbon group, and Ra' 3 can be bonded with any of Ra' 1 and Ra' 2 to form a ring].

式(a1-r-1)中,Ra’1 及Ra’2 中,以至少一者為氫原子為佳,以兩者為氫原子為較佳。 Ra’1 或Ra’2 為烷基時,該烷基例如與上述α取代丙烯酸酯的說明中,被列舉作為可鍵結於α位之碳原子的取代基之烷基為相同之內容,又以碳數1~5之烷基為佳。具體而言,以直鏈狀或支鏈狀之烷基為較佳例示。更具體而言,可列舉如:甲基、乙基、丙基、異丙基、n-丁基、異丁基、tert-丁基、戊基、異戊基、新戊基等,又以甲基或乙基為較佳,以甲基為特佳。In the formula (a1-r-1), it is preferable that at least one of Ra'1 and Ra'2 is a hydrogen atom, and it is more preferable that both are hydrogen atoms. When Ra'1 or Ra'2 is an alkyl group, the alkyl group is, for example, the same as the alkyl group listed as a substituent that can be bonded to a carbon atom at the α-position in the description of the above-mentioned α-substituted acrylate, and An alkyl group having 1 to 5 carbon atoms is preferred. Specifically, a linear or branched alkyl group is preferably exemplified. More specifically, examples include: methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, tert-butyl, pentyl, isopentyl, neopentyl, etc. Methyl or ethyl is preferred, and methyl is particularly preferred.

式(a1-r-1)中,Ra’3 之烴基,可列舉如:直鏈狀或支鏈狀之烷基、環狀之烴基等。 該直鏈狀之烷基,以碳數1~5為佳,以1~4為較佳,以1或2為更佳。具體而言,可列舉如:甲基、乙基、n-丙基、n-丁基、n-戊基等。該些之中,又以甲基、乙基或n-丁基為佳,以甲基或乙基為較佳。In the formula (a1-r-1), the hydrocarbon group of Ra'3 includes, for example, straight-chain or branched-chain alkyl groups, cyclic hydrocarbon groups, and the like. The linear alkyl group preferably has 1-5 carbon atoms, more preferably 1-4 carbon atoms, more preferably 1 or 2 carbon atoms. Specifically, methyl group, ethyl group, n-propyl group, n-butyl group, n-pentyl group etc. are mentioned. Among these, methyl, ethyl or n-butyl is preferable, and methyl or ethyl is more preferable.

該支鏈狀之烷基,以碳數3~10為佳,以3~5為較佳。具體而言,可列舉如:異丙基、異丁基、tert-丁基、異戊基、新戊基、1,1-二乙基丙基、2,2-二甲基丁基等,又以異丙基為佳。The branched alkyl group preferably has 3-10 carbon atoms, more preferably 3-5 carbon atoms. Specifically, examples include isopropyl, isobutyl, tert-butyl, isopentyl, neopentyl, 1,1-diethylpropyl, 2,2-dimethylbutyl, etc. Also, isopropyl is preferred.

Ra’3 為環狀之烴基時,該烴基可為脂肪族烴基亦可、芳香族烴基亦可,又,可為多環式基亦可、單環式基亦可。 單環式基之脂肪族烴基,以由單環鏈烷去除1個氫原子而得之基為佳。該單環鏈烷,以碳數3~6者為佳,具體而言,可列舉如:環戊烷、環己烷等。 多環式基之脂肪族烴基,以由多環鏈烷去除1個氫原子而得之基為佳,該多環鏈烷,以碳數7~12者為佳,具體而言,可列舉如:金剛烷、降莰烷、異莰烷、三環癸烷、四環十二烷等。When Ra'3 is a cyclic hydrocarbon group, the hydrocarbon group may be an aliphatic hydrocarbon group, an aromatic hydrocarbon group, a polycyclic group or a monocyclic group. The monocyclic aliphatic hydrocarbon group is preferably a group obtained by removing one hydrogen atom from a monocyclic alkane. The monocyclic alkanes preferably have 3 to 6 carbon atoms, and specific examples include cyclopentane and cyclohexane. The aliphatic hydrocarbon group of the polycyclic group is preferably a group obtained by removing one hydrogen atom from a polycyclic alkane, and the polycyclic alkane preferably has 7 to 12 carbon atoms. Specifically, examples include: : Adamantane, Norbornane, Isobornane, Tricyclodecane, Tetracyclododecane, etc.

Ra’3 之環狀之烴基為芳香族烴基時,該芳香族烴基,為至少具有1個芳香環的烴基。 該芳香環,只要為具有4n+2個π電子的環狀共軛系時,則未有特別之限定、其可為單環式亦可、多環式亦可。芳香環之碳數以5~30為佳,以5~20為較佳,以6~15為更佳,以6~10為特佳。 芳香環,具體而言,可列舉如:苯、萘、蒽、菲等之芳香族烴環;構成前述芳香族烴環的碳原子中之一部份被雜原子取代而得之芳香族雜環等。芳香族雜環中之雜原子,可列舉如:氧原子、硫原子、氮原子等。芳香族雜環,具體而言,可列舉如:吡啶環、噻吩環、呋喃環等。 Ra’3 中之芳香族烴基,具體而言,可列舉如:由前述芳香族烴環或芳香族雜環去除1個氫原子而得之基(芳基或雜芳基);由含有2個以上之芳香環的芳香族化合物(例如聯苯、茀等)去除1個氫原子而得之基;前述芳香族烴環或芳香族雜環的氫原子中之1個被伸烷基取代而得之基(可列舉如:苄基、苯乙基、1-萘基甲基、2-萘基甲基、1-萘基乙基、2-萘基乙基等之芳烷基等)等。前述芳香族烴環或芳香族雜環鍵結的伸烷基之碳數,以1~4為佳,以1~2為較佳,以1為特佳。When the cyclic hydrocarbon group of Ra'3 is an aromatic hydrocarbon group, the aromatic hydrocarbon group is a hydrocarbon group having at least one aromatic ring. The aromatic ring is not particularly limited as long as it is a cyclic conjugated system having 4n+2 π electrons, and it may be monocyclic or polycyclic. The carbon number of the aromatic ring is preferably 5-30, more preferably 5-20, more preferably 6-15, and particularly preferably 6-10. Aromatic rings, specifically, include aromatic hydrocarbon rings such as benzene, naphthalene, anthracene, and phenanthrene; aromatic heterocyclic rings in which some of the carbon atoms constituting the aforementioned aromatic hydrocarbon rings are replaced by heteroatoms wait. The hetero atom in the aromatic heterocycle includes, for example, an oxygen atom, a sulfur atom, a nitrogen atom, and the like. The aromatic heterocycle specifically includes, for example, a pyridine ring, a thiophene ring, a furan ring, and the like. The aromatic hydrocarbon group in Ra' 3 , specifically, can be enumerated such as: the base (aryl or heteroaryl) obtained by removing one hydrogen atom from the aforementioned aromatic hydrocarbon ring or aromatic heterocyclic ring; A group obtained by removing one hydrogen atom from the above-mentioned aromatic compound (such as biphenyl, fennel, etc.); one of the hydrogen atoms of the above-mentioned aromatic hydrocarbon ring or aromatic heterocycle is replaced by an alkylene group (Aralkyl groups such as benzyl, phenethyl, 1-naphthylmethyl, 2-naphthylmethyl, 1-naphthylethyl, 2-naphthylethyl, etc.) etc. can be mentioned. The number of carbon atoms in the alkylene group bonded to the aforementioned aromatic hydrocarbon ring or aromatic heterocyclic ring is preferably 1-4, more preferably 1-2, and particularly preferably 1.

Ra’3 與Ra’1 、Ra’2 之任一者鍵結而形成環時,該環式基以4~7員環為佳,以4~6員環為較佳。該環式基之具體例,可列舉如:四氫吡喃基、四氫呋喃基等。When Ra' 3 is bonded to any one of Ra' 1 and Ra' 2 to form a ring, the cyclic group is preferably a 4-7-membered ring, more preferably a 4-6-membered ring. Specific examples of the cyclic group include, for example, tetrahydropyranyl, tetrahydrofuranyl, and the like.

式(a1-r-1)中,Ra’3 之烴基,以環狀之脂肪族烴基為佳,以多環式基之脂肪族烴基為較佳,以由金剛烷、降莰烷、異莰烷、三環癸烷或四環十二烷去除1個氫原子而得之基為更佳,以由金剛烷去除1個氫原子而得之基為特佳。In the formula (a1-r-1), the hydrocarbon group of Ra'3 is preferably a cyclic aliphatic hydrocarbon group, preferably a polycyclic aliphatic hydrocarbon group, such as adamantane, norbornane, isocamphene A group obtained by removing one hydrogen atom from alkane, tricyclodecane or tetracyclododecane is more preferable, and a group obtained by removing one hydrogen atom from adamantane is particularly preferable.

・三級烷酯型酸解離性基: 上述極性基中,保護羧基之酸解離性基,可列舉如:下述通式(a1-r-2)所表示之酸解離性基等。 又,下述式(a1-r-2)所表示之酸解離性基中,由烷基所構成者,以下,於簡便上亦稱為「三級烷酯型酸解離性基」。・Tertiary alkyl ester type acid dissociative group: Among the above-mentioned polar groups, the acid-dissociable group protecting the carboxyl group includes, for example, an acid-dissociable group represented by the following general formula (a1-r-2). Also, among the acid-dissociating groups represented by the following formula (a1-r-2), those composed of alkyl groups are also referred to as "tertiary alkyl ester-type acid-dissociating groups" hereinafter for convenience.

Figure 02_image015
[式中,Ra’4 ~Ra’6 各別獨立為可具有取代基之烴基,且Ra’5 、Ra’6 可相互鍵結而形成環]。
Figure 02_image015
[In the formula, Ra' 4 to Ra' 6 are each independently a hydrocarbon group which may have a substituent, and Ra' 5 and Ra' 6 may be bonded to each other to form a ring].

Ra’4 ~Ra’6 之可具有取代基的烴基,可列舉如:直鏈狀或支鏈狀之烷基(鏈狀之烷基)、直鏈狀或支鏈狀之烯基(鏈狀之烯基),或環狀之烴基等。The hydrocarbon groups that may have substituents for Ra' 4 to Ra' 6 include, for example, straight-chain or branched-chain alkyl groups (chain-like alkyl groups), straight-chain or branched-chain alkenyl groups (chain-like alkenyl), or cyclic hydrocarbon groups, etc.

Ra’4 ~Ra’6 之直鏈狀之烷基,以碳數1~20為佳,以1~15為較佳,以1~10為最佳。具體而言,可列舉如:甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、壬基、癸基、十一烷基、十二烷基、十三烷基、異十三烷基、十四烷基、十五烷基、十六烷基、異十六烷基、十七烷基、十八烷基、十九烷基、二十烷基、二十一烷基、二十二烷基等。The linear alkyl group of Ra' 4 to Ra' 6 preferably has 1-20 carbons, more preferably 1-15 carbons, most preferably 1-10 carbons. Specifically, examples include: methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl, tridecyl base, isotridecyl, tetradecyl, pentadecyl, hexadecyl, isohexadecyl, heptadecyl, octadecyl, nonadecyl, eicosyl, two Undecyl, behenyl, etc.

Ra’4 ~Ra’6 之支鏈狀之烷基,以碳數3~20為佳,以3~15為較佳,以3~10為最佳。具體而言,可列舉如:1-甲基乙基、1-甲基丙基、2-甲基丙基、1-甲基丁基、2-甲基丁基、3-甲基丁基、1-乙基丁基、2-乙基丁基、1-甲基戊基、2-甲基戊基、3-甲基戊基、4-甲基戊基等。The branched chain alkyl group of Ra'4 - Ra'6 preferably has 3-20 carbon atoms, more preferably 3-15 carbon atoms, most preferably 3-10 carbon atoms. Specifically, examples include: 1-methylethyl, 1-methylpropyl, 2-methylpropyl, 1-methylbutyl, 2-methylbutyl, 3-methylbutyl, 1-ethylbutyl, 2-ethylbutyl, 1-methylpentyl, 2-methylpentyl, 3-methylpentyl, 4-methylpentyl, etc.

Ra’4 ~Ra’6 之直鏈狀或支鏈狀之烯基,以碳數2~10為佳,以2~5為較佳,以2~4為更佳,以3為特佳。直鏈狀之烯基,例如:乙烯基、丙烯基(烯丙基)、丁炔基等。支鏈狀之烯基,例如:1-甲基丙烯基、2-甲基丙烯基等。The linear or branched alkenyl groups of Ra' 4 to Ra' 6 preferably have 2-10 carbon atoms, more preferably 2-5 carbon atoms, more preferably 2-4 carbon atoms, and particularly preferably 3 carbon atoms. Straight-chain alkenyl, such as vinyl, propenyl (allyl), butynyl, etc. Branched alkenyl, for example: 1-methacryl, 2-methacryl, etc.

Ra’4 ~Ra’6 之鏈狀之烷基或鏈狀之烯基,可具有取代基。Ra’4 ~Ra’6 之鏈狀之烷基或鏈狀之烯基可具有的取代基,例如:羥基、醚鍵結(-O-)等。The chained alkyl group or chained alkenyl group of Ra' 4 to Ra' 6 may have a substituent. The chained alkyl or chained alkenyl of Ra' 4 to Ra' 6 may have substituents, for example: hydroxyl group, ether bond (-O-), etc.

Ra’4 ~Ra’6 之環狀之烴基,可為多環式基亦可、單環式基亦可。又,Ra’4 ~Ra’6 之環狀之烴基,可為脂環式烴基亦可、於脂環式烴基上縮合芳香族環而得之縮合環式基亦可。 單環式基之脂肪族烴基,以由單環鏈烷或單環烯烴去除1個氫原子而得之基為佳。該單環鏈烷,以碳數3~6者為佳,具體而言,可列舉如:環戊烷、環己烷等。該單環烯烴,以碳數3~6者為佳,具體而言,可列舉如:環戊烯、環己烯等。 多環式基之脂肪族烴基,以由多環鏈烷或多環烯烴去除1個氫原子而得之基為佳,該多環鏈烷,以碳數7~12者為佳,具體而言,可列舉如:金剛烷、降莰烷、異莰烷、三環癸烷、四環十二烷等。又,該多環烯烴,以碳數7~12者為佳,具體而言,可列舉如:金剛烯、降莰烯、異莰烯、三環癸烯、四環十二烯等。 於脂環式烴基上縮和芳香族環而得之縮合環式基,可列舉如:由四氫萘、茚烷等的二環式化合物之脂肪族環去除1個氫原子而得之基等。 Ra’4 ~Ra’6 之環狀之脂肪族烴基中,構成其環結構的碳原子之一部份可被含有雜原子的取代基所取代。該含有雜原子的取代基,以-O-、-C(=O)-O-、-S-、-S(=O)2 -、 -S(=O)2 -O-為佳。The cyclic hydrocarbon groups of Ra' 4 to Ra' 6 may be polycyclic or monocyclic. In addition, the cyclic hydrocarbon group of Ra' 4 to Ra' 6 may be an alicyclic hydrocarbon group, or a condensed ring group obtained by condensing an aromatic ring on an alicyclic hydrocarbon group. The monocyclic aliphatic hydrocarbon group is preferably a group obtained by removing one hydrogen atom from a monocyclic alkane or a monocyclic olefin. The monocyclic alkanes preferably have 3 to 6 carbon atoms, and specific examples include cyclopentane and cyclohexane. The monocyclic olefin preferably has 3 to 6 carbon atoms, and specific examples include cyclopentene and cyclohexene. The polycyclic aliphatic hydrocarbon group is preferably a group obtained by removing one hydrogen atom from polycyclic alkanes or polycyclic alkenes. The polycyclic alkanes preferably have 7 to 12 carbon atoms, specifically , for example, adamantane, norbornane, isobornane, tricyclodecane, tetracyclododecane and the like. In addition, the polycyclic olefin preferably has 7 to 12 carbon atoms, and specifically, adamantene, norcamphene, isocamphene, tricyclodecene, tetracyclododecene, and the like can be exemplified. Condensed cyclic groups obtained by condensing an aromatic ring on an alicyclic hydrocarbon group include, for example, groups obtained by removing one hydrogen atom from the aliphatic ring of bicyclic compounds such as tetralin and indanes, etc. . In the cyclic aliphatic hydrocarbon groups of Ra' 4 to Ra' 6 , some of the carbon atoms constituting the ring structure may be substituted by substituents containing heteroatoms. The heteroatom-containing substituent is preferably -O-, -C(=O)-O-, -S-, -S(=O) 2 -, -S(=O) 2 -O-.

Ra’4 ~Ra’6 的芳香族烴基,為具有芳香環之烴基。該芳香族烴基之碳數以3~30為佳,以碳數5~30為較佳,以碳數5~20為更佳,以碳數6~15為特佳,以碳數6~10為最佳。但,該碳數中,為不包含取代基中之碳數者。 R101 中之芳香族烴基所具有的芳香環,具體而言,可列舉如:苯、茀、萘、蒽、菲、聯苯,或構成該些芳香環的碳原子之一部份被雜原子取代而得之芳香族雜環等。芳香族雜環中之雜原子,可列舉如:氧原子、硫原子、氮原子等。芳香族雜環,具體而言,可列舉如:噻吩環、呋喃環、吡啶環等。 R101 中之芳香族烴基,具體而言,可列舉如:由前述芳香環去除1個氫原子而得之基(芳基:例如苯基、萘基等)、前述芳香環的氫原子中之1個被伸烷基取代而得之基(例如苄基、苯乙基、1-萘基甲基、2-萘基甲基、1-萘基乙基、2-萘基乙基等之芳烷基等)等。前述伸烷基(芳烷基中之烷鏈)之碳數,以1~4為佳,以碳數1~2為較佳,以碳數1為特佳。The aromatic hydrocarbon groups of Ra' 4 to Ra' 6 are hydrocarbon groups having an aromatic ring. The aromatic hydrocarbon group preferably has 3 to 30 carbons, more preferably 5 to 30 carbons, more preferably 5 to 20 carbons, particularly preferably 6 to 15 carbons, and 6 to 10 carbons. for the best. However, the carbon number does not include the carbon number in the substituent. The aromatic ring possessed by the aromatic hydrocarbon group in R 101 specifically includes: benzene, stilbene, naphthalene, anthracene, phenanthrene, biphenyl, or some of the carbon atoms constituting these aromatic rings are replaced by heteroatoms Aromatic heterocycles obtained by substitution, etc. The hetero atom in the aromatic heterocycle includes, for example, an oxygen atom, a sulfur atom, a nitrogen atom, and the like. The aromatic heterocycle specifically includes, for example, a thiophene ring, a furan ring, a pyridine ring, and the like. The aromatic hydrocarbon group in R 101 specifically includes, for example, a group obtained by removing one hydrogen atom from the aforementioned aromatic ring (aryl: such as phenyl, naphthyl, etc.), one of the hydrogen atoms of the aforementioned aromatic ring A group substituted by an alkylene group (such as benzyl, phenethyl, 1-naphthylmethyl, 2-naphthylmethyl, 1-naphthylethyl, 2-naphthylethyl, etc.) alkyl, etc.) etc. The carbon number of the aforementioned alkylene group (alkane chain in the aralkyl group) is preferably 1-4, more preferably 1-2, and particularly preferably 1.

Ra’4 ~Ra’6 之環狀之烴基,可具有取代基。Ra’4 ~Ra’6 之環狀之烴基可具有的取代基,可列舉如:鹵素原子(氟原子、氯原子、溴原子、碘原子)、-RP1 、-RP2 -O-RP1 、-RP2 -CO-RP1 、-RP2 -CO-ORP1 、-RP2 -O-CO-RP1 、-RP2 -OH、 -RP2 -CN或-RP2 -COOH (以下,該些取代基統稱為「Ra06 」)等。 其中,RP1 為碳數1~10的1價之鏈狀飽和烴基、碳數3~20的1價之脂肪族環狀飽和烴基或碳數6~30的1價之芳香族烴基。又,RP2 為單鍵、碳數1~10的2價之鏈狀飽和烴基、碳數3~20的2價之脂肪族環狀飽和烴基或碳數6~30的2價之芳香族烴基。 其中,RP1 及RP2 的鏈狀飽和烴基、脂肪族環狀飽和烴基及芳香族烴基具有的氫原子之一部份或全部,可被氟原子所取代。上述脂肪族環狀烴基,可單獨具有1個以上的上述取代基亦可、分別具有1個以上的複數種的上述取代基亦可。 碳數1~10的1價之鏈狀飽和烴基,可列舉如:甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、癸基等。 碳數3~20的1價之脂肪族環狀飽和烴基,可列舉如:環丙基、環丁基、環戊基、環己基、環庚基、環辛基、環癸基、環十二烷基等的單環式脂肪族飽和烴基;雙環[2.2.2]庚基、三環[5.2.1.02,6 ]癸基、三環[3.3.1.13,7 ]癸基、四環[6.2.1.13,6 .02,7 ]十二烷基、金剛烷基等的多環式脂肪族飽和烴基等。 碳數6~30的1價之芳香族烴基,可列舉如:由苯、聯苯、茀、萘、蒽、菲等之芳香族烴環去除1個氫原子而得之基等。The cyclic hydrocarbon groups of Ra' 4 to Ra' 6 may have substituents. The substituents that the cyclic hydrocarbon groups of Ra' 4 to Ra' 6 may have include, for example: halogen atoms (fluorine atoms, chlorine atoms, bromine atoms, iodine atoms), -R P1 , -R P2 -OR P1 , - R P2 -CO-R P1 , -R P2 -CO-OR P1 , -R P2 -O-CO-R P1 , -R P2 -OH, -R P2 -CN or -R P2 -COOH (hereinafter, these The substituents are collectively referred to as “Ra 06 ”) and the like. Among them, R P1 is a monovalent chain saturated hydrocarbon group having 1 to 10 carbons, a monovalent aliphatic cyclic saturated hydrocarbon group having 3 to 20 carbons, or a monovalent aromatic hydrocarbon group having 6 to 30 carbons. Also, R P2 is a single bond, a divalent chain saturated hydrocarbon group having 1 to 10 carbons, a divalent aliphatic cyclic saturated hydrocarbon group having 3 to 20 carbons, or a divalent aromatic hydrocarbon group having 6 to 30 carbons . Among them, some or all of the hydrogen atoms in the chain saturated hydrocarbon groups, aliphatic cyclic saturated hydrocarbon groups and aromatic hydrocarbon groups of R P1 and R P2 may be substituted by fluorine atoms. The above-mentioned aliphatic cyclic hydrocarbon group may have one or more of the above-mentioned substituents alone, or may have one or more of plural kinds of the above-mentioned substituents. Examples of monovalent chain saturated hydrocarbon groups having 1 to 10 carbon atoms include methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, and decyl. Monovalent aliphatic cyclic saturated hydrocarbon groups with 3 to 20 carbons, examples include: cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, cyclodecyl, cyclododecyl Monocyclic aliphatic saturated hydrocarbon groups such as alkyl ; 6.2.1.1 3,6 .0 2,7 ] Polycyclic aliphatic saturated hydrocarbon groups such as dodecyl, adamantyl, etc. Examples of monovalent aromatic hydrocarbon groups having 6 to 30 carbon atoms include groups obtained by removing one hydrogen atom from aromatic hydrocarbon rings such as benzene, biphenyl, fennel, naphthalene, anthracene, and phenanthrene.

前述式(a1-r-2)中,Ra’5 與Ra’6 相互鍵結而形成環時,以下述通式(a1-r2-1)所表示之基、下述通式(a1-r2-2)所表示之基、下述通式(a1-r2-3)所表示之基為較佳之例示。 另一方面,前述式(a1-r-2)中,Ra’4 ~Ra’6 未相互鍵結,而為獨立之烴基時,以下述通式(a1-r2-4)所表示之基為較佳之例示。In the aforementioned formula (a1-r-2), when Ra'5 and Ra'6 are bonded to each other to form a ring, the group represented by the following general formula (a1-r2-1), the following general formula (a1-r2 The group represented by -2) and the group represented by the following general formula (a1-r2-3) are preferable examples. On the other hand, in the aforementioned formula (a1-r-2), when Ra' 4 to Ra' 6 are not bonded to each other but are independent hydrocarbon groups, the group represented by the following general formula (a1-r2-4) is better example.

Figure 02_image017
[式(a1-r2-1)中,Ra’10 為碳數1~10之烷基,Ra’11 表示可與Ra’10 鍵結的碳原子共同於脂環式烴基或脂環式烴基上縮合芳香族環而形成縮合環式基之基。式(a1-r2-2)中,Ya為碳原子;Xa為與Ya共同形成環狀烴基之基;該環狀之烴基所具有的氫原子之一部份或全部可被取代。Ra01 ~Ra03 各別獨立為氫原子、碳數1~10的1價之鏈狀飽和烴基或碳數3~20的1價之脂肪族環狀飽和烴基。該鏈狀飽和烴基及脂肪族環狀飽和烴基所具有的氫原子之一部份或全部可被取代。Ra01 ~Ra03 之2個以上可相互鍵結而形成環狀結構。*表示鍵結鍵。式(a1-r2-3)中,Yaa為碳原子;Xaa為與Yaa共同形成脂肪族環式基之基。Ra04 為可具有取代基的芳香族烴基。 *表示鍵結鍵。式(a1-r2-4)中,Ra’12 及Ra’13 各別獨立為碳數1~10的1價之鏈狀飽和烴基或氫原子。該鏈狀飽和烴基所具有的氫原子之一部份或全部可被取代。Ra’14 為可具有取代基的芳香族烴基。*表示鍵結鍵(以下相同)]。
Figure 02_image017
[In the formula (a1-r2-1), Ra' 10 is an alkyl group with 1 to 10 carbon atoms, and Ra' 11 means that the carbon atom that can be bonded to Ra' 10 is jointly on the alicyclic hydrocarbon group or the alicyclic hydrocarbon group A group that condenses an aromatic ring to form a condensed ring group. In the formula (a1-r2-2), Ya is a carbon atom; Xa is a group forming a cyclic hydrocarbon group together with Ya; a part or all of the hydrogen atoms of the cyclic hydrocarbon group can be substituted. Ra 01 to Ra 03 are each independently a hydrogen atom, a monovalent chain saturated hydrocarbon group having 1 to 10 carbons, or a monovalent aliphatic cyclic saturated hydrocarbon group having 3 to 20 carbons. Part or all of the hydrogen atoms of the chain saturated hydrocarbon group and the aliphatic cyclic saturated hydrocarbon group may be substituted. Two or more of Ra 01 to Ra 03 may be bonded to each other to form a ring structure. *Indicates a bonding key. In the formula (a1-r2-3), Yaa is a carbon atom; Xaa is a group forming an aliphatic ring group together with Yaa. Ra 04 is an aromatic hydrocarbon group which may have a substituent. *Indicates a bonding key. In the formula (a1-r2-4), Ra'12 and Ra'13 are each independently a monovalent chain saturated hydrocarbon group having 1 to 10 carbon atoms or a hydrogen atom. Part or all of the hydrogen atoms of the chain saturated hydrocarbon group may be substituted. Ra'14 is an aromatic hydrocarbon group which may have a substituent. * means a bonding key (the same below)].

式(a1-r2-1)中,Ra’10 之碳數1~10之烷基,以式(a1-r-1)中,Ra’3 之直鏈狀或支鏈狀之烷基所列舉之基為佳。 Ra’10 以碳數1~5之烷基為佳。 式(a1-r2-1)中,Ra’11 與Ra’10 鍵結的碳原子共同形成的脂肪族環式基或脂環式烴基上縮合芳香族環而得之縮合環式基,以式(a1-r-2)中之Ra’4 ~Ra’6 之環狀之烴基所列舉之基為佳,以由單環鏈烷或多環鏈烷去除1個氫原子而得之基為較佳,以由環戊烷、環己烷、金剛烷、降莰烷、異莰烷、三環癸烷、四環十二烷去除1個氫原子而得之基為更佳,以由環戊烷或金剛烷去除1個氫原子而得之基為特佳。 Ra’11 與Ra’10 鍵結的碳原子共同形成的脂肪族環式基中,構成其環結構的碳原子之一部份可被含有雜原子的取代基所取代。該含有雜原子的取代基,以-O-、-C(=O)-O-、-S-、-S(=O)2 -、-S(=O)2 -O-為佳。In formula (a1-r2-1), the alkyl group with 1 to 10 carbon atoms in Ra'10 is listed as the linear or branched alkyl group in Ra'3 in formula (a1-r-1). The foundation is good. Ra'10 is preferably an alkyl group having 1 to 5 carbon atoms. In the formula (a1-r2-1), the condensed ring-type group obtained by condensing an aromatic ring on the aliphatic ring-type group or the alicyclic-type hydrocarbon group formed by the carbon atom bonded by Ra' 11 and Ra' 10 is represented by the formula The cyclic hydrocarbon groups of Ra' 4 to Ra' 6 in (a1-r-2) are preferably the groups listed, and the groups obtained by removing one hydrogen atom from monocyclic alkanes or polycyclic alkanes are preferred Preferably, the group obtained by removing one hydrogen atom from cyclopentane, cyclohexane, adamantane, norbornane, isobornane, tricyclodecane, and tetracyclododecane is more preferred, and the group obtained from cyclopentane A group obtained by removing one hydrogen atom from alkane or adamantane is particularly preferred. In the aliphatic ring group formed by the carbon atoms bonded by Ra'11 and Ra'10 , a part of the carbon atoms constituting the ring structure can be replaced by a substituent containing a heteroatom. The heteroatom-containing substituent is preferably -O-, -C(=O)-O-, -S-, -S(=O) 2 -, -S(=O) 2 -O-.

式(a1-r2-2)中,Xa與Ya共同形成環狀之烴基,以前述式(a1-r-2)中之Ra’4 ~Ra’6 之環狀之烴基所列舉之基為佳,以由單環鏈烷去除1個氫原子而得之基為較佳,以由環戊烷或環己烷去除1個氫原子而得之基為較佳,以由環戊烷去除1個氫原子而得之基為更佳。 Xa與Ya共同形成環狀之烴基,可具有取代基。該取代基,可列舉如:與式(a1-r-2)中之Ra’4 ~Ra’6 之環狀之烴基可具有的取代基為相同之內容等。 式(a1-r2-2)中,Ra01 ~Ra03 中,碳數1~10的1價之鏈狀飽和烴基,可列舉如:甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、癸基等。 Ra01 ~Ra03 中,碳數3~20的1價之脂肪族環狀飽和烴基,可列舉如:環丙基、環丁基、環戊基、環己基、環庚基、環辛基、環癸基、環十二烷基等的單環式脂肪族飽和烴基;雙環[2.2.2]庚基、三環[5.2.1.02,6 ]癸基、三環[3.3.1.13,7 ]癸基、四環[6.2.1.13,6 .02,7 ]十二烷基、金剛烷基等的多環式脂肪族飽和烴基等。 Ra01 ~Ra03 之中,就容易合成衍生結構單位(a0)的單體化合物之之觀點,以氫原子、碳數1~10的1價之鏈狀飽和烴基為佳,其中,又以氫原子、甲基、乙基為較佳,以氫原子為特佳。In the formula (a1-r2-2), Xa and Ya together form a cyclic hydrocarbon group, preferably the groups listed as the cyclic hydrocarbon groups of Ra' 4 ~ Ra' 6 in the aforementioned formula (a1-r-2) , the group obtained by removing one hydrogen atom from monocyclic alkane is preferred, the group obtained by removing one hydrogen atom from cyclopentane or cyclohexane is preferred, and the group obtained by removing one hydrogen atom from cyclopentane The base derived from a hydrogen atom is more preferred. Xa and Ya together form a cyclic hydrocarbon group, which may have a substituent. Examples of the substituents include the same substituents as the cyclic hydrocarbon groups of Ra' 4 to Ra' 6 in the formula (a1-r-2). In the formula (a1-r2-2), among Ra 01 to Ra 03 , monovalent chained saturated hydrocarbon groups with 1 to 10 carbons include, for example: methyl, ethyl, propyl, butyl, pentyl, Hexyl, heptyl, octyl, decyl, etc. Among Ra 01 to Ra 03 , monovalent aliphatic cyclic saturated hydrocarbon groups with 3 to 20 carbons include, for example, cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, Monocyclic aliphatic saturated hydrocarbon groups such as cyclodecyl and cyclododecyl; bicyclo[2.2.2]heptyl, tricyclo[5.2.1.0 2,6 ]decyl, tricyclo[3.3.1.1 3,7 ]decyl, polycyclic aliphatic saturated hydrocarbon groups such as tetracyclo[6.2.1.1 3,6 .0 2,7 ]dodecyl, adamantyl, and the like. Among Ra 01 to Ra 03 , from the viewpoint of easy synthesis of monomeric compounds derived from the structural unit (a0), hydrogen atoms and monovalent chain-like saturated hydrocarbon groups with 1 to 10 carbons are preferred, and among them, hydrogen Atoms, methyl groups, and ethyl groups are preferred, and hydrogen atoms are particularly preferred.

上述Ra01 ~Ra03 所表示之鏈狀飽和烴基,或脂肪族環狀飽和烴基所具有的取代基,可列舉如:與上述之Ra05 為相同之基等。Examples of the substituents of the chain saturated hydrocarbon groups represented by Ra 01 to Ra 03 or the aliphatic cyclic saturated hydrocarbon groups include the same groups as Ra 05 above.

Ra01 ~Ra03 之2個以上相互鍵結而形成環狀結構所生成的含有碳-碳雙鍵之基,可列舉如:環戊烯基、環己烯基、甲基環戊烯基、甲基環己烯基、環亞戊基乙烯基、環亞己基乙烯基等。該些之中,就容易合成衍生結構單位(a1)的單體化合物之觀點,又以環戊烯基、環己烯基、環亞戊基乙烯基為佳。Two or more of Ra 01 to Ra 03 are bonded to each other to form a cyclic structure containing a carbon-carbon double bond. For example: cyclopentenyl, cyclohexenyl, methylcyclopentenyl, Methylcyclohexenyl, cyclopentylenevinyl, cyclohexylenevinyl, etc. Among these, cyclopentenyl, cyclohexenyl, and cyclopentylidenevinyl are preferable from the viewpoint of easy synthesis of monomeric compounds from which the structural unit (a1) is derived.

式(a1-r2-3)中,Xaa與Yaa共同形成的脂肪族環式基,以式(a1-r-2)中之Ra’4 ~Ra’6 之環狀烴基所列舉之基為佳,以由單環鏈烷去除1個氫原子而得之基為較佳,以由環戊烷或環己烷去除1個氫原子而得之基為較佳。 式(a1-r2-3)中,Ra04 中之芳香族烴基,可列舉如:由碳數5~30之芳香族烴環去除1個以上的氫原子而得之基等。其中,Ra04 又以由碳數6~15之芳香族烴環去除1個以上的氫原子而得之基為佳,以由苯、萘、蒽、菲、噻吩或呋喃去除1個以上的氫原子而得之基為較佳,以由苯、萘或蒽去除1個以上的氫原子而得之基為更佳,以由苯或萘去除1個以上的氫原子而得之基為特佳,以由苯去除1個以上的氫原子而得之基為最佳。In formula (a1-r2-3), the aliphatic cyclic group formed by Xaa and Yaa is preferably the group listed as the cyclic hydrocarbon group of Ra' 4 ~ Ra' 6 in formula (a1-r-2) , preferably a group obtained by removing one hydrogen atom from monocyclic alkane, and preferably a group obtained by removing one hydrogen atom from cyclopentane or cyclohexane. In the formula (a1-r2-3), the aromatic hydrocarbon group in Ra 04 includes, for example, a group obtained by removing one or more hydrogen atoms from an aromatic hydrocarbon ring having 5 to 30 carbon atoms. Among them, Ra 04 is preferably a group obtained by removing one or more hydrogen atoms from an aromatic hydrocarbon ring with 6 to 15 carbon atoms, such as removing one or more hydrogen atoms from benzene, naphthalene, anthracene, phenanthrene, thiophene or furan The group obtained by removing one or more hydrogen atoms from benzene, naphthalene or anthracene is more preferable, and the group obtained by removing one or more hydrogen atoms from benzene or naphthalene is particularly preferable. , the most preferred is the base obtained by removing one or more hydrogen atoms from benzene.

式(a1-r2-3)中之Ra04 可具有的取代基,可列舉如:甲基、乙基、丙基、羥基、羧基、鹵素原子(氟原子、氯原子、溴原子等)、烷氧基(甲氧基、乙氧基、丙氧基、丁氧基等)、烷基氧羰基等。The substituents that Ra 04 in the formula (a1-r2-3) may have include, for example: methyl, ethyl, propyl, hydroxyl, carboxyl, halogen atoms (fluorine atoms, chlorine atoms, bromine atoms, etc.), alkane Oxygen (methoxy, ethoxy, propoxy, butoxy, etc.), alkyloxycarbonyl, etc.

式(a1-r2-4)中,Ra’12 及Ra’13 各別獨立為碳數1~10的1價之鏈狀飽和烴基或氫原子。Ra’12 及Ra’13 中,碳數1~10的1價之鏈狀飽和烴基,可列舉如:與上述Ra01 ~Ra03 中,碳數1~10的1價之鏈狀飽和烴基為相同之內容等。該鏈狀飽和烴基所具有的氫原子之一部份或全部可被取代。 Ra’12 及Ra’13 中,又以氫原子、碳數1~5之烷基為佳,以碳數1~5之烷基為較佳,以甲基、乙基為更佳,以甲基為特佳。 上述Ra’12 及Ra’13 所表示之鏈狀飽和烴基被取代時,該取代基可列舉如:與上述之Ra05 為相同之基等。In the formula (a1-r2-4), Ra'12 and Ra'13 are each independently a monovalent chain saturated hydrocarbon group having 1 to 10 carbon atoms or a hydrogen atom. In Ra' 12 and Ra' 13 , the monovalent chain saturated hydrocarbon groups having 1 to 10 carbons are, for example, the same as the monovalent chain saturated hydrocarbon groups having 1 to 10 carbons in Ra 01 to Ra 03 above. same content etc. Part or all of the hydrogen atoms of the chain saturated hydrocarbon group may be substituted. In Ra' 12 and Ra' 13 , a hydrogen atom and an alkyl group with 1 to 5 carbons are preferred, an alkyl group with 1 to 5 carbons is preferred, a methyl group and an ethyl group are more preferred, and a methyl group is preferred. The base is excellent. When the chain-like saturated hydrocarbon group represented by Ra'12 and Ra'13 above is substituted, the substituent includes, for example, the same group as Ra'05 above.

式(a1-r2-4)中,Ra’14 為可具有取代基的芳香族烴基。Ra’14 中之芳香族烴基,可列舉如:與Ra04 中之芳香族烴基為相同之內容等。其中,Ra’14 又以由碳數6~15之芳香族烴環去除1個以上的氫原子而得之基為佳,以由苯、萘、蒽或菲去除1個以上氫原子而得之基為較佳,以由苯、萘或蒽去除1個以上的氫原子而得之基為更佳,以由萘或蒽去除1個以上的氫原子而得之基為特佳,以由萘去除1個以上的氫原子而得之基為最佳。 Ra’14 可具有的取代基,可列舉如:與Ra04 可具有的取代基為相同之內容等。In the formula (a1-r2-4), Ra'14 is an aromatic hydrocarbon group which may have a substituent. The aromatic hydrocarbon group in Ra'14 includes, for example, the same contents as the aromatic hydrocarbon group in Ra04 . Among them, Ra' 14 is preferably a group obtained by removing one or more hydrogen atoms from an aromatic hydrocarbon ring with 6 to 15 carbon atoms, and is obtained by removing one or more hydrogen atoms from benzene, naphthalene, anthracene or phenanthrene The group obtained by removing one or more hydrogen atoms from benzene, naphthalene or anthracene is more preferred, the group obtained by removing one or more hydrogen atoms from naphthalene or anthracene is particularly preferred, and the group obtained by removing one or more hydrogen atoms from naphthalene or anthracene is particularly preferred. The group obtained by removing one or more hydrogen atoms is most preferable. The substituent that Ra'14 may have includes, for example, the same content as the substituent that Ra'04 may have.

式(a1-r2-4)中之Ra’14 為萘基時,其與前述式(a1-r2-4)中的三級碳原子鍵結之位置,可為萘基之1位或2位之任一者皆可。 式(a1-r2-4)中之Ra’14 為蒽基時,其與前述式(a1-r2-4)中的三級碳原子鍵結之位置,可為蒽基之1位、2位或9位之任一者皆可。When Ra'14 in the formula (a1-r2-4) is a naphthyl group, its bonding position with the tertiary carbon atom in the aforementioned formula (a1-r2-4) can be the 1 or 2 position of the naphthyl group Either will do. When Ra' 14 in the formula (a1-r2-4) is an anthracenyl group, its bonding position with the tertiary carbon atom in the aforementioned formula (a1-r2-4) can be the 1-position or 2-position of the anthracenyl group Or any one of 9 digits is acceptable.

前述式(a1-r2-1)所表示之基的具體例,例如以下所示。Specific examples of the group represented by the aforementioned formula (a1-r2-1) are as follows.

Figure 02_image019
Figure 02_image019

Figure 02_image021
Figure 02_image021

Figure 02_image023
Figure 02_image023

前述式(a1-r2-2)所表示之基的具體例,例如以下所示。Specific examples of the group represented by the aforementioned formula (a1-r2-2) are as follows.

Figure 02_image025
Figure 02_image025

Figure 02_image027
Figure 02_image027

Figure 02_image029
Figure 02_image029

前述式(a1-r2-3)所表示之基的具體例,例如以下所示。Specific examples of the group represented by the aforementioned formula (a1-r2-3) are as follows.

Figure 02_image031
Figure 02_image031

前述式(a1-r2-4)所表示之基的具體例,例如以下所示。Specific examples of the group represented by the aforementioned formula (a1-r2-4) are as follows.

Figure 02_image033
Figure 02_image033

三級烷基氧羰基酸解離性基: 前述保護極性基中的羥基之酸解離性基,可列舉如:下述通式(a1-r-3)所表示之酸解離性基(以下,於簡便上,亦稱為「三級烷基氧羰基酸解離性基」)。Tertiary alkyloxycarbonyl acid dissociative group: The acid-dissociative groups protecting the hydroxyl groups in the polar groups include, for example, the acid-dissociative groups represented by the following general formula (a1-r-3) (hereinafter, also referred to as "tertiary alkyl groups" for convenience) Oxycarbonyl acid dissociating group").

Figure 02_image035
[式中,Ra’7 ~Ra’9 各別為烷基]。
Figure 02_image035
[wherein, Ra' 7 to Ra' 9 are each an alkyl group].

式(a1-r-3)中,Ra’7 ~Ra’9 ,以各別為碳數1~5之烷基為佳,以1~3為較佳。 又,各烷基之合計碳數,以3~7為佳,以3~5為較佳,以3~4為最佳。In the formula (a1-r-3), each of Ra' 7 to Ra' 9 is preferably an alkyl group having 1 to 5 carbon atoms, more preferably 1 to 3 carbon atoms. Moreover, the total carbon number of each alkyl group is preferably 3-7, more preferably 3-5, and most preferably 3-4.

前述式(a0)中,Ra00 之酸解離性基,以前述式(a1-r2-1)~(a1-r2-4)中任一者所表示之基為佳,以前述式(a1-r2-1)~(a1-r2-3)中任一者所表示之基為較佳。In the aforementioned formula (a0), the acid dissociative group of Ra 00 is preferably represented by any one of the aforementioned formulas (a1-r2-1) to (a1-r2-4), and the aforementioned formula (a1- The group represented by any one of r2-1) to (a1-r2-3) is preferable.

以下為記載結構單位(a0)的具體例。式中,R0 與前述為相同之內容。Specific examples of the structural unit (a0) are described below. In the formula, R 0 has the same content as above.

Figure 02_image037
Figure 02_image037

Figure 02_image039
Figure 02_image039

Figure 02_image041
Figure 02_image041

(A1)成份具有的結構單位(a0),可為1種亦可、2種以上亦可。 (A1)成份中的結構單位(a0)之比例,相對於構成(A1)成份的全結構單位之合計(100莫耳%),以30~75莫耳%為佳,以35~70莫耳%為較佳,以40~65莫耳%為更佳。 結構單位(a0)之比例於下限值以上時,亦可提高感度、解析性、改善粗糙度等的微影蝕刻特性。又,於上限值以下時,可取得與其他結構單位之平衡。(A1) The structural unit (a0) which a component has may be 1 type or 2 or more types. The proportion of the structural unit (a0) in the component (A1) relative to the total (100 mol%) of all structural units constituting the component (A1) is preferably 30-75 mol%, and 35-70 mol% % is better, more preferably 40-65 mol%. When the proportion of the structural unit (a0) is more than the lower limit value, the lithographic etching characteristics such as sensitivity, resolution, and roughness can be improved. Also, when it is below the upper limit, a balance with other structural units can be achieved.

其他結構單位: 該(A1)成份,除結構單位(a0)以外,必要時,亦可具有其他結構單位。 其他結構單位,可列舉如:通式(a10-1)所表示的結構單位(a10);含有經由酸之作用而使極性增大之酸分解性基的結構單位(a1)(其中,相當於結構單位(a0)者除外);含有含內酯之環式基、含-SO2 -之環式基或含碳酸酯之環式基的結構單位(a2);含有含極性基之脂肪族烴基的結構單位(a3)(其中,相當於結構單位(a1)或結構單位(a2)者除外);含有非酸解離性之脂肪族環式基的結構單位(a4);由苯乙烯或其衍生物所衍生的結構單位等。Other structural units: The component (A1) may have other structural units, if necessary, in addition to the structural unit (a0). Other structural units include, for example: structural unit (a10) represented by the general formula (a10-1); Structural unit (a0 except those); Structural unit (a2) containing cyclic group containing lactone, cyclic group containing -SO 2 - or cyclic group containing carbonate; aliphatic hydrocarbon group containing polar group Structural units (a3) (except those corresponding to structural units (a1) or structural units (a2)); structural units (a4) containing non-acid dissociative aliphatic ring groups; styrene or its derivatives Structural units derived from substances, etc.

結構單位(a10): 結構單位(a10),為下述通式(a10-1)所表示的結構單位。Structural unit (a10): The structural unit (a10) is a structural unit represented by the following general formula (a10-1).

Figure 02_image043
[式中,R為氫原子、碳數1~5之烷基或碳數1~5之鹵化烷基;Yax1 為單鍵或2價之連結基。Wax1 為(nax1 +1)價之芳香族烴基。nax1 為1以上之整數]。
Figure 02_image043
[In the formula, R is a hydrogen atom, an alkyl group with 1 to 5 carbons, or a halogenated alkyl group with 1 to 5 carbons; Ya x1 is a single bond or a divalent linking group. Wa x1 is an aromatic hydrocarbon group with a valence of (n ax1 +1). n ax1 is an integer greater than or equal to 1].

前述式(a10-1)中,R為氫原子、碳數1~5之烷基或碳數1~5之鹵化烷基; R中之碳數1~5之烷基,以碳數1~5的直鏈狀或支鏈狀之烷基為佳,具體而言,可列舉如:甲基、乙基、丙基、異丙基、n-丁基、異丁基、tert-丁基、戊基、異戊基、新戊基等。 R中之碳數1~5之鹵化烷基,為前述碳數1~5之烷基的氫原子之一部份或全部被鹵素原子取代而得之基。該鹵素原子,可列舉如:氟原子、氯原子、溴原子、碘原子等,特別是以氟原子為佳。 R以氫原子、碳數1~5之烷基或碳數1~5之氟化烷基為佳,就工業上取得之容易度,以氫原子、甲基或三氟甲基為較佳,以氫原子或甲基為更佳,以氫原子為特佳。In the aforementioned formula (a10-1), R is a hydrogen atom, an alkyl group with 1 to 5 carbons, or a halogenated alkyl group with 1 to 5 carbons; The alkyl group with 1 to 5 carbons in R is preferably a linear or branched chain with 1 to 5 carbons, specifically, methyl, ethyl, propyl, iso Propyl, n-butyl, isobutyl, tert-butyl, pentyl, isopentyl, neopentyl, etc. The halogenated alkyl group having 1 to 5 carbons in R is a group obtained by substituting part or all of the hydrogen atoms of the aforementioned alkyl group having 1 to 5 carbons with halogen atoms. The halogen atom includes, for example, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, etc., and a fluorine atom is particularly preferable. R is preferably a hydrogen atom, an alkyl group having 1 to 5 carbons, or a fluorinated alkyl group having 1 to 5 carbons, and is preferably a hydrogen atom, a methyl group or a trifluoromethyl group in view of the ease of industrial acquisition. A hydrogen atom or a methyl group is more preferable, and a hydrogen atom is particularly preferable.

前述式(a10-1)中,Yax1 為單鍵或2價之連結基。 前述式(a10-1)中,Yax1 中的2價之連結基,例如:與前述式(a0)中之Vax1 的2價之連結基為相同之內容等。 其中,Yax1 又以單鍵、酯鍵結[-C(=O)-O-、-O-C(=O)-]、 醚鍵結(-O-)、直鏈狀或支鏈狀之伸烷基,或該些之組合為佳,以單鍵、酯鍵結[-C(=O)-O-、-O-C(=O)-]為較佳。In the aforementioned formula (a10-1), Ya x1 is a single bond or a divalent linking group. In the aforementioned formula (a10-1), the divalent linking group in Ya x1 is, for example, the same as the divalent linking group in Va x1 in the aforementioned formula (a0). Among them, Ya x1 is extended by single bond, ester bond [-C(=O)-O-, -OC(=O)-], ether bond (-O-), straight chain or branched chain An alkyl group or a combination thereof is preferred, and a single bond or an ester bond [-C(=O)-O-, -OC(=O)-] is preferred.

前述式(a10-1)中,Wax1 為(nax1 +1)價之芳香族烴基。 Wax1 中之芳香族烴基,可列舉如:由芳香環去除(nax1 +1)個氫原子而得之基等。此處之芳香環,只要為具有4n+2個的π電子之環狀共軛系時,則未有特別之限定,其可為單環式亦可、多環式亦可。芳香環之碳數以5~30為佳,以碳數5~20為較佳,以碳數6~15為更佳,以碳數6~10為特佳。該芳香環,具體而言,可列舉如:苯、萘、蒽、菲等之芳香族烴環;構成前述芳香族烴環的碳原子中之一部份被雜原子取代而得之芳香族雜環等。芳香族雜環中之雜原子,可列舉如:氧原子、硫原子、氮原子等。芳香族雜環,具體而言,可列舉如:吡啶環、噻吩環等。 又,Wax1 中之芳香族烴基,又可列舉如:由含有2個以上的芳香環之芳香族化合物(例如聯苯、茀等)去除(nax1 +1)個氫原子而得之基等。 上述之中,Wax1 又以由苯、萘、蒽或聯苯去除(nax1 +1)個氫原子而得之基為佳,以由苯或萘去除(nax1 +1)個氫原子而得之基為較佳,以由苯去除(nax1 +1)個氫原子而得之基為更佳。In the aforementioned formula (a10-1), Wa x1 is an aromatic hydrocarbon group having a valence of (n ax1 +1). The aromatic hydrocarbon group in Wa x1 includes, for example, a group obtained by removing (n ax1 +1) hydrogen atoms from an aromatic ring, and the like. The aromatic ring here is not particularly limited as long as it is a cyclic conjugated system having 4n+2 π electrons, and it may be monocyclic or polycyclic. The carbon number of the aromatic ring is preferably 5-30, more preferably 5-20, more preferably 6-15, particularly preferably 6-10. Specifically, the aromatic rings include aromatic hydrocarbon rings such as benzene, naphthalene, anthracene, and phenanthrene; Ring etc. The hetero atom in the aromatic heterocycle includes, for example, an oxygen atom, a sulfur atom, a nitrogen atom, and the like. The aromatic heterocycle specifically includes, for example, a pyridine ring, a thiophene ring, and the like. Also, the aromatic hydrocarbon group in Wa x1 includes, for example, a group obtained by removing (n ax1 + 1) hydrogen atoms from an aromatic compound (such as biphenyl, fennel, etc.) containing two or more aromatic rings. . Among the above, Wa x1 is preferably a group obtained by removing (n ax1 +1) hydrogen atoms from benzene, naphthalene, anthracene or biphenyl, and a group obtained by removing (n ax1 +1) hydrogen atoms from benzene or naphthalene. The base obtained is preferred, and the base obtained by removing (n ax1 +1) hydrogen atoms from benzene is more preferred.

前述式(a10-1)中,nax1 為1以上之整數,又以1~10之整數為佳,以1~5之整數為較佳,以1、2或3為更佳,以1或2為特佳。In the aforementioned formula (a10-1), n ax1 is an integer of 1 or more, preferably an integer of 1 to 10, more preferably an integer of 1 to 5, more preferably 1, 2 or 3, and preferably 1 or 2 is the best.

以下為前述式(a10-1)所表示的結構單位(a10) 之具體例示。 以下各式中,Rα 表示氫原子、甲基或三氟甲基。The following are specific examples of the structural unit (a10) represented by the aforementioned formula (a10-1). In the following formulae, R α represents a hydrogen atom, a methyl group or a trifluoromethyl group.

Figure 02_image045
Figure 02_image045

Figure 02_image047
Figure 02_image047

Figure 02_image049
Figure 02_image049

Figure 02_image051
Figure 02_image051

(A1)成份具有的結構單位(a10),可為1種亦可、2種以上亦可。 (A1)成份具有結構單位(a10)時,(A1)成份中的結構單位(a10)之比例,相對於構成(A1)成份的全結構單位之合計(100莫耳%),以15~70莫耳%為佳,以20~60莫耳%為較佳,以25~55莫耳%為更佳。 結構單位(a10)之比例於下限值以上時,可使感度更容易提高。另一方面,於上限值以下時,可容易取得與其他結構單位之平衡。(A1) The structural unit (a10) which a component has may be 1 type, or 2 or more types may be sufficient. When the component (A1) has a structural unit (a10), the ratio of the structural unit (a10) in the component (A1) to the total (100 mol%) of all structural units constituting the component (A1) is 15 to 70 Mole% is preferred, more preferably 20-60 mol%, more preferably 25-55 mol%. When the proportion of the structural unit (a10) is above the lower limit, the sensitivity can be improved more easily. On the other hand, when it is below the upper limit, the balance with other structural units can be easily obtained.

結構單位(a1): 結構單位(a1),為含有經由酸之作用而使極性增大之酸分解性基結構單位(其中,相當於結構單位(a0)者除外)。 經由酸之作用而使極性增大之酸分解性基,可列舉如:經由酸之作用而分解而生成極性基之基等。 極性基,可列舉如:羧基、羥基、胺基、磺酸基(-SO3 H) 等。該些之中,又以結構中含有-OH之極性基(以下,亦稱為「含OH之極性基」)為佳,以羧基或羥基為較佳,以羧基為特佳。 酸分解性基,具體而言,可列舉如:前述極性基被酸解離性基保護之基(例如含OH之極性基的氫原子,被酸解離性基保護之基)等。 此處之「酸解離性基」係指:(i)經由酸之作用,而使該酸解離性基與該酸解離性基鄰接的原子之間的鍵結形成開裂之具有酸解離性之基,或(ii)經由酸之作用而使一部份鍵結形成開裂之後,再經由所產生的去碳酸反應,使該酸解離性基與該酸解離性基鄰接的原子之間的鍵結形成開裂之基,等二者。 構成酸分解性基的酸解離性基,必須具有較該酸解離性基經解離而生成的極性基為更低極性之基,如此,經由酸之作用而使該酸解離性基解離之際,會生成較該酸解離性基更高極性的極性基,而增大極性。其結果將使(A1)成份全體之極性增大。極性增大結果,相對地使對顯影液之溶解性發生變化,於顯影液為鹼顯影液時會增大溶解性,於顯影液為有機系顯影液時則會降低溶解性。Structural unit (a1): Structural unit (a1) is a structural unit containing an acid-decomposable group whose polarity is increased by the action of acid (excluding those corresponding to structural unit (a0)). The acid-decomposable group whose polarity is increased by the action of an acid includes, for example, a group that is decomposed by the action of an acid to form a polar group. Polar groups include, for example, carboxyl groups, hydroxyl groups, amino groups, sulfonic acid groups (—SO 3 H) and the like. Among them, a polar group containing -OH in the structure (hereinafter also referred to as "OH-containing polar group") is preferable, a carboxyl group or a hydroxyl group is preferable, and a carboxyl group is particularly preferable. Specific examples of the acid-decomposable group include groups in which the aforementioned polar group is protected by an acid-dissociative group (for example, a hydrogen atom of a polar group containing OH, a group protected by an acid-dissociative group), and the like. The "acid dissociative group" here refers to: (i) through the action of an acid, the bond between the acid dissociative group and the adjacent atoms of the acid dissociative group is formed to form an acid dissociative group , or (ii) after a part of the bond is cleaved by the action of an acid, the bond between the acid dissociative group and the adjacent atom of the acid dissociative group is formed through the resulting decarboxylation reaction The foundation of cracking, and so on. The acid-dissociable group constituting the acid-dissociable group must have a lower polarity than the polar group formed by dissociation of the acid-dissociable group. A polar group having a higher polarity than the acid dissociative group is generated to increase the polarity. As a result, the polarity of the (A1) component will increase as a whole. As a result of the increase in polarity, the solubility to the developer is relatively changed. When the developer is an alkaline developer, the solubility will be increased, and when the developer is an organic developer, the solubility will be reduced.

酸解離性基,例如:可使用目前為止被提案作為化學增強型阻劑組成物用的基底樹脂之酸解離性基者。 被提案作為化學增強型阻劑組成物用的基底樹脂之酸解離性基者,具體而言,例如:前述式(a0)中之R00 之酸解離性基所說明的「縮醛型酸解離性基」、「三級烷酯型酸解離性基」、「三級烷基氧羰基酸解離性基」等。As the acid dissociative group, for example, the acid dissociative group proposed as the base resin for the chemically amplified resist composition can be used. Those proposed as the acid dissociative group of the base resin for the chemically amplified resist composition, specifically, for example: the "acetal type acid dissociation Sexual group", "tertiary alkyl ester type acid dissociative group", "tertiary alkyloxycarbonyl acid dissociative group" and so on.

結構單位(a1),可列舉如:由α位的碳原子鍵結之氫原子可被取代基所取代的丙烯酸酯所衍生的結構單位、由丙烯醯胺所衍生的結構單位、羥基苯乙烯或羥基苯乙烯衍生物所衍生的結構單位的羥基中之氫原子的至少一部份被含有前述酸分解性基的取代基所保護的結構單位、由乙烯安息香酸或乙烯安息香酸衍生物所衍生的結構單位的-C(=O)-OH中之氫原子的至少一部份被含有前述酸分解性基的取代基所保護的結構單位等。Structural units (a1) include, for example, structural units derived from acrylic esters, structural units derived from acrylamide, hydroxystyrene or Structural units derived from hydroxystyrene derivatives in which at least a part of the hydrogen atoms in the hydroxyl groups are protected by substituents containing the aforementioned acid-decomposable groups, structural units derived from ethylene benzoic acid or ethylene benzoic acid derivatives A structural unit in which at least a part of the hydrogen atoms in -C(=O)-OH of the structural unit is protected by a substituent containing the aforementioned acid-decomposable group, etc.

結構單位(a1),於上述之中,又以由α位的碳原子鍵結之氫原子可被取代基所取代的丙烯酸酯所衍生的結構單位為佳。 該結構單位(a1)的較佳具體例,可列舉如:下述通式(a1-1)或(a1-2)所表示的結構單位等。Among the above, the structural unit (a1) is preferably a structural unit derived from an acrylate in which a hydrogen atom bonded to a carbon atom at the α position can be replaced by a substituent. Preferable specific examples of the structural unit (a1) include, for example, structural units represented by the following general formula (a1-1) or (a1-2).

Figure 02_image053
[式中,R為氫原子、碳數1~5之烷基或碳數1~5之鹵化烷基;Va1 為可具有醚鍵結的2價之烴基;na1 為0~2之整數;Ra1 為上述通式(a1-r-1)或(a1-r-2)所表示之酸解離性基。Wa1 為na2 +1價之烴基,na2 為1~3之整數,Ra2 為上述式(a1-r-1)或(a1-r-3)所表示之酸解離性基]。
Figure 02_image053
[wherein, R is a hydrogen atom, an alkyl group with 1 to 5 carbons, or a halogenated alkyl group with 1 to 5 carbons; Va 1 is a divalent hydrocarbon group that may have an ether bond; n a1 is an integer of 0 to 2 ; Ra 1 is an acid dissociative group represented by the above general formula (a1-r-1) or (a1-r-2). Wa 1 is n a2 + 1-valent hydrocarbon group, n a2 is an integer of 1 to 3, and Ra 2 is an acid dissociative group represented by the above formula (a1-r-1) or (a1-r-3)].

前述式(a1-1)中,R及Va1 與前述式(a0-1-1)中之R及Va1 為相同之內容。In the aforementioned formula (a1-1), R and Va 1 are the same as R and Va 1 in the aforementioned formula (a0-1-1).

前述式(a1-1)中,Ra1 為上述式(a1-r-1)或(a1-r-2)所表示之酸解離性基。In the aforementioned formula (a1-1), Ra 1 is an acid dissociative group represented by the aforementioned formula (a1-r-1) or (a1-r-2).

前述式(a1-2)中,Wa1 中之na2 +1價之烴基,可為脂肪族烴基亦可、芳香族烴基亦可。該脂肪族烴基,為不具有芳香族性的烴基之意,其可為飽和亦可、不飽和亦可,通常以飽和為佳。前述脂肪族烴基,可列舉如:直鏈狀或支鏈狀之脂肪族烴基、結構中含有環之脂肪族烴基,或直鏈狀或支鏈狀之脂肪族烴基與結構中含有環之脂肪族烴基組合而得之基等。 前述na2 +1價,以2~4價為佳,以2或3價為較佳。In the aforementioned formula (a1-2), the n a2 + 1-valent hydrocarbon group in Wa 1 may be an aliphatic hydrocarbon group or an aromatic hydrocarbon group. The aliphatic hydrocarbon group means a hydrocarbon group not having aromaticity, and may be saturated or unsaturated, but saturation is generally preferred. The aforementioned aliphatic hydrocarbon group includes, for example: a straight-chain or branched aliphatic hydrocarbon group, an aliphatic hydrocarbon group containing a ring in its structure, or a straight-chain or branched aliphatic hydrocarbon group and an aliphatic hydrocarbon group containing a ring in its structure. The base obtained by combining hydrocarbon groups, etc. The aforementioned n a2 +1 valence is preferably 2 to 4 valences, more preferably 2 or 3 valences.

以下為前述式(a1-1)所表示的結構單位之具體例示。以下各式中,Rα 表示氫原子、甲基或三氟甲基。The following are specific examples of the structural unit represented by the aforementioned formula (a1-1). In the following formulae, R α represents a hydrogen atom, a methyl group or a trifluoromethyl group.

Figure 02_image055
Figure 02_image055

Figure 02_image057
Figure 02_image057

Figure 02_image059
Figure 02_image059

Figure 02_image061
Figure 02_image061

Figure 02_image063
Figure 02_image063

Figure 02_image065
Figure 02_image065

Figure 02_image067
Figure 02_image067

Figure 02_image069
Figure 02_image069

以下為前述式(a1-2)所表示的結構單位之具體例示。The following are specific examples of the structural unit represented by the aforementioned formula (a1-2).

Figure 02_image071
Figure 02_image071

(A1)成份具有的結構單位(a1),可為1種亦可、2種以上亦可。 結構單位(a1),就更容易提高使用電子線或EUV進行的微影蝕刻時之特性(感度、形狀等)等觀點,以前述式(a1-1)所表示的結構單位為較佳。 又,就降低粗糙度之觀點,前述式(a1-1)中之Ra1 的酸解離性基,以下述通式(a1-r2-11)或(a1-r2-21)所表示之酸解離性基為佳。(A1) The structural unit (a1) which a component has may be 1 type, or 2 or more types may be sufficient. Structural unit (a1) is preferably a structural unit represented by the aforementioned formula (a1-1) from the viewpoint of easier improvement of characteristics (sensitivity, shape, etc.) during lithography using electron beams or EUV. Also, from the viewpoint of reducing the roughness, the acid dissociative group of Ra 1 in the aforementioned formula (a1-1) is dissociated with the acid represented by the following general formula (a1-r2-11) or (a1-r2-21) Good sex.

Figure 02_image073
[式(a1-r2-11)中,Ra’10 為碳數1~10之烷基,Ra’111 表示與Ra’10 鍵結的碳原子共同形成單環之脂肪族環式基之基。式(a1-r2-2)中,Ya為碳原子;Xb為與Ya共同形成單環之脂肪族烴基之基。該單環之脂肪族烴基所具有的氫原子之一部份或全部可被取代。Ra01 ~Ra03 各別獨立為氫原子、碳數1~10的1價之鏈狀飽和烴基或碳數3~20的1價之脂肪族環狀飽和烴基。該鏈狀飽和烴基及脂肪族環狀飽和烴基所具有的氫原子之一部份或全部可被取代。Ra01 ~Ra03 之2個以上可相互鍵結而形成環狀結構。*表示鍵結鍵]。
Figure 02_image073
[In the formula (a1-r2-11), Ra' 10 is an alkyl group with 1 to 10 carbon atoms, and Ra' 111 represents an aliphatic cyclic group that forms a monocyclic ring together with the carbon atoms bonded to Ra' 10 . In the formula (a1-r2-2), Ya is a carbon atom; Xb is a group of an aliphatic hydrocarbon group forming a monocyclic ring together with Ya. Part or all of the hydrogen atoms of the monocyclic aliphatic hydrocarbon group may be substituted. Ra 01 to Ra 03 are each independently a hydrogen atom, a monovalent chain saturated hydrocarbon group having 1 to 10 carbons, or a monovalent aliphatic cyclic saturated hydrocarbon group having 3 to 20 carbons. Part or all of the hydrogen atoms of the chain saturated hydrocarbon group and the aliphatic cyclic saturated hydrocarbon group may be substituted. Two or more of Ra 01 to Ra 03 may be bonded to each other to form a ring structure. * means a bonding key].

式(a1-r2-11)中,Ra’10 與前述式(a1-r2-1)中之Ra’10 為相同之內容。 式(a1-r2-11)中,Ra’111 與Ra’10 鍵結的碳原子共同形成的單環之脂肪族烴基,又以式(a1-r-1)中之Ra’3 之單環式基之脂肪族烴基所列舉之基為佳。In the formula (a1-r2-11), Ra' 10 is the same as Ra' 10 in the aforementioned formula (a1-r2-1). In the formula (a1-r2-11), the monocyclic aliphatic hydrocarbon group formed by Ra' 111 and the carbon atom bonded by Ra' 10 , and the monocyclic aliphatic hydrocarbon group of Ra' 3 in the formula (a1-r-1) The aliphatic hydrocarbon group in the formula group is preferably those listed above.

式(a1-r2-21)中,Xb與Ya共同形成的單環之脂肪族烴基,可列舉如:由前述式(a1-r-1)中之Ra’3 中的環狀的1價之烴基的單環式脂肪族烴基再去除1個以上的氫原子而得之基等。 Xb與Ya共同形成的單環之脂肪族烴基,可具有取代基。該取代基,可列舉如:與上述Ra’3 中的環狀之烴基可具有的取代基為相同之內容等。其中,Xb與Ya共同形成的單環之脂肪族烴基,又以由單環鏈烷去除1個氫原子而得之基為佳,以由環戊烷或環己烷去除1個氫原子而得之基為較佳。 式(a1-r2-21)中,Ra01 ~Ra03 ,與前述式(a1-r2-2)中之Ra01 ~Ra03 為相同之內容。In the formula (a1-r2-21), the monocyclic aliphatic hydrocarbon group formed jointly by Xb and Ya can be enumerated such as: the cyclic monovalent hydrocarbon group in Ra'3 in the aforementioned formula (a1-r-1) A monocyclic aliphatic hydrocarbon group of a hydrocarbon group obtained by removing one or more hydrogen atoms, etc. The monocyclic aliphatic hydrocarbon group formed jointly by Xb and Ya may have a substituent. The substituent includes, for example, the same content as the substituent that the cyclic hydrocarbon group in Ra'3 above may have. Among them, the monocyclic aliphatic hydrocarbon group formed by Xb and Ya is preferably a group obtained by removing one hydrogen atom from monocyclic alkane, and a group obtained by removing one hydrogen atom from cyclopentane or cyclohexane The base is better. In formula (a1-r2-21), Ra 01 to Ra 03 are the same as Ra 01 to Ra 03 in formula (a1-r2-2).

(A1)成份中的結構單位(a1)之比例,相對於構成(A1)成份的全結構單位之合計(100莫耳%),以5~70莫耳%為佳,以5~65莫耳%為較佳,以5~50莫耳%為更佳。 結構單位(a1)之比例於下限值以上時,可容易製得阻劑圖型,亦可提高感度、解析性、改善粗糙度等的微影蝕刻特性。又,於上限值以下時,可取得與其他結構單位之平衡。The proportion of the structural unit (a1) in the component (A1) is preferably 5-70 mol%, preferably 5-65 mol%, relative to the total (100 mol%) of all structural units constituting the component (A1) % is better, and 5-50 mol% is more preferable. When the ratio of the structural unit (a1) is above the lower limit, resist patterns can be easily produced, and lithographic etching characteristics such as sensitivity, resolution, and roughness can be improved. Also, when it is below the upper limit, a balance with other structural units can be achieved.

結構單位(a2): (A1)成份,除結構單位(a0)以外,可再具有含有含內酯之環式基、含-SO2 -之環式基或含碳酸酯之環式基的結構單位(a2)。 結構單位(a2)的含內酯之環式基、含-SO2 -之環式基或含碳酸酯之環式基,因具有可使(A1)成份形成適當結構的結構單位(a2),例如具有可適當地調整酸之擴散長度、提高阻劑膜與基盤之密著性,或適度地調整顯影時的溶解性等效果,而可使微影蝕刻特性等更為良好。Structural unit (a2): In addition to the structural unit (a0), the component (A1) may have a structure containing a lactone-containing cyclic group, a -SO 2 --containing cyclic group, or a carbonate-containing cyclic group unit (a2). The lactone-containing cyclic group, -SO 2 --containing cyclic group or carbonate-containing cyclic group of the structural unit (a2) has a structural unit (a2) that allows the component (A1) to form a suitable structure, For example, it can properly adjust the diffusion length of the acid, improve the adhesion between the resist film and the substrate, or moderately adjust the solubility during development, so that the lithographic etching characteristics can be improved.

「含內酯之環式基」係指,其環骨架中含有含-O-C(=O)-之環(內酯環)的環式基之意。以內酯環作為1個環之方式計數,僅為內酯環時稱為單環式基,尚具有其他環結構時,無論其結構為何,皆稱為多環式基。含內酯之環式基,可為單環式基亦可、多環式基亦可。 結構單位(a2)中的含內酯之環式基,並未有特別限定,而可使用任意之成份。具體而言,例如:下述通式(a2-r-1)~(a2-r-7)所各別表示之基等。The "lactone-containing cyclic group" means a cyclic group containing a -O-C(=O)--containing ring (lactone ring) in its ring skeleton. The lactone ring is counted as one ring, and when there are only lactone rings, it is called a monocyclic group, and when it has other ring structures, it is called a polycyclic group regardless of its structure. The lactone-containing cyclic group may be a monocyclic group or a polycyclic group. The lactone-containing cyclic group in the structural unit (a2) is not particularly limited, and any component can be used. Specifically, for example, groups represented by the following general formulas (a2-r-1) to (a2-r-7), etc. respectively.

Figure 02_image075
[式中,Ra’21 各別獨立為氫原子、烷基、烷氧基、鹵素原子、鹵化烷基、羥基、-COOR”、-OC(=O)R”、羥烷基或氰基;R”為氫原子、烷基、含內酯之環式基、含碳酸酯之環式基,或含-SO2 -之環式基。A”為可含有氧原子(-O-)或硫原子(-S-)的碳數1~5之伸烷基、氧原子或硫原子。n’為0~2之整數,m’為0或1]。
Figure 02_image075
[wherein, Ra'21 are each independently a hydrogen atom, an alkyl group, an alkoxy group, a halogen atom, an alkyl halide, a hydroxyl group, -COOR", -OC(=O)R", a hydroxyalkyl group or a cyano group; R" is a hydrogen atom, an alkyl group, a lactone-containing cyclic group, a carbonate-containing cyclic group, or a -SO 2 --containing cyclic group. A" may contain an oxygen atom (-O-) or sulfur Atom (-S-) is an alkylene group having 1 to 5 carbon atoms, an oxygen atom or a sulfur atom. n' is an integer of 0 to 2, m' is 0 or 1].

前述式(a2-r-1)~(a2-r-7)中,Ra’21 中之烷基,以碳數1~6之烷基為佳。該烷基,以直鏈狀或支鏈狀為佳。具體而言,可列舉如:甲基、乙基、丙基、異丙基、n-丁基、異丁基、tert-丁基、戊基、異戊基、新戊基、己基等。該些之中又以甲基或乙基為佳,以甲基為特佳。 Ra’21 中之烷氧基,以碳數1~6之烷氧基為佳。 該烷氧基,以直鏈狀或支鏈狀為佳。具體而言,例如:前述Ra’21 中,被列舉作為烷基之烷基,與氧原子 (-O-)連結而得之基等。 Ra’21 中之鹵素原子,可列舉如:氟原子、氯原子、溴原子、碘原子等,又以氟原子為佳。 Ra’21 中之鹵化烷基,可列舉如:前述Ra’21 中的烷基之氫原子的一部份或全部被前述鹵素原子取代而得之基等。該鹵化烷基,以氟化烷基為佳,以全氟烷基為特佳。In the aforementioned formulas (a2-r-1) to (a2-r-7), the alkyl group in Ra'21 is preferably an alkyl group having 1 to 6 carbon atoms. The alkyl group is preferably linear or branched. Specifically, methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, isobutyl group, tert-butyl group, pentyl group, isopentyl group, neopentyl group, hexyl group etc. are mentioned. Among these, methyl or ethyl is preferable, and methyl is particularly preferable. The alkoxy group in Ra'21 is preferably an alkoxy group having 1 to 6 carbon atoms. The alkoxy group is preferably linear or branched. Specifically, for example, in the aforementioned Ra'21 , an alkyl group as an alkyl group, a group obtained by bonding to an oxygen atom (-O-), and the like are listed. The halogen atoms in Ra' 21 include, for example, fluorine atoms, chlorine atoms, bromine atoms, iodine atoms, etc., and fluorine atoms are preferred. The halogenated alkyl group in Ra'21 includes, for example, a group obtained by substituting a part or all of the hydrogen atoms of the alkyl group in the aforementioned Ra'21 with the aforementioned halogen atoms. The halogenated alkyl group is preferably a fluorinated alkyl group, particularly preferably a perfluoroalkyl group.

Ra’21 中的-COOR”、-OC(=O)R”中,任一個R”皆為氫原子、烷基、含內酯之環式基、含碳酸酯之環式基,或含-SO2 -之環式基。 R”中之烷基,可為直鏈狀、支鏈狀或環狀之任一者皆可,其碳數以1~15為佳。 R”為直鏈狀或支鏈狀之烷基時,以碳數1~10為佳,以碳數1~5為更佳,以甲基或乙基為特佳。 R”為環狀之烷基時,以碳數3~15為佳,以碳數4~12為較佳,以碳數5~10為更佳。具體而言,可列舉如:由可被氟原子或氟化烷基所取代,或未被取代的單環鏈烷去除1個以上的氫原子而得之基;由雙環鏈烷、三環鏈烷、四環鏈烷等多環鏈烷去除1個以上的氫原子而得之基等。更具體而言,可列舉如:由環戊烷、環己烷等的單環鏈烷去除1個以上的氫原子而得之基;由金剛烷、降莰烷、異莰烷、三環癸烷、四環十二烷等多環鏈烷去除1個以上的氫原子而得之基等。 R”中的含內酯之環式基,前述通式(a2-r-1)~(a2-r-7)所各別表示之基為相同之內容等。 R”中的含碳酸酯之環式基,與後述含碳酸酯之環式基為相同內容,具體而言,可列舉如:通式(ax3-r-1)~(ax3-r-3)所各別表示之基等。 R”中之含-SO2 -之環式基,與後述之含-SO2 -之環式基為相同內容,具體而言,可列舉如:通式(a5-r-1)~(a5-r-4)所各別表示之基等。 Ra’21 中之羥烷基,以碳數1~6者為佳,具體而言,例如:前述Ra’21 中的烷基之至少一個氫原子被羥基取代而得之基等。In -COOR" and -OC(=O)R" in Ra' 21 , any R" is a hydrogen atom, an alkyl group, a lactone-containing cyclic group, a carbonate-containing cyclic group, or a - Cyclic group of SO 2 -. The alkyl group in R" can be linear, branched or cyclic, and the number of carbon atoms is preferably 1-15. When R" is a linear or branched alkyl group, it preferably has 1 to 10 carbons, more preferably 1 to 5 carbons, especially methyl or ethyl. R" is cyclic In the case of an alkyl group, the number of carbons is preferably 3-15, more preferably 4-12, and more preferably 5-10. Specifically, examples include: groups obtained by removing one or more hydrogen atoms from unsubstituted monocyclic alkanes that may be substituted by fluorine atoms or fluorinated alkyl groups; A group obtained by removing one or more hydrogen atoms from polycyclic alkanes such as alkanes and tetracyclic alkanes. More specifically, examples include: groups obtained by removing one or more hydrogen atoms from monocyclic alkanes such as cyclopentane and cyclohexane; A group obtained by removing one or more hydrogen atoms from polycyclic alkanes such as alkanes and tetracyclododecanes, etc. The lactone-containing cyclic group in R" and the respective groups represented by the aforementioned general formulas (a2-r-1) to (a2-r-7) have the same content, etc. The carbonate-containing group in R" The cyclic group is the same as the carbonate-containing cyclic group described later, and specific examples thereof include groups represented by the general formulas (ax3-r-1) to (ax3-r-3). The cyclic group containing -SO 2 - in R" has the same content as the cyclic group containing -SO 2 - described later. Specifically, it can be listed as: general formula (a5-r-1)~(a5 -r-4) the groups represented separately, etc. The hydroxyalkyl group in Ra'21 is preferably one with 1 to 6 carbon atoms, specifically, for example: at least one hydrogen of the alkyl group in the above-mentioned Ra'21 A group in which an atom is substituted by a hydroxyl group, etc.

前述通式(a2-r-2)、(a2-r-3)、(a2-r-5)中,A”中之碳數1~5之伸烷基,以直鏈狀或支鏈狀之伸烷基為佳,可列舉如:伸甲基、伸乙基、n-伸丙基、異伸丙基等。該伸烷基含有氧原子或硫原子時,其具體例如:於前述伸烷基末端或碳原子間介有-O-或-S-而得之基等,可列舉如:-O-CH2 -、-CH2 -O-CH2 -、 -S-CH2 -、-CH2 -S-CH2 -等。A”以碳數1~5之伸烷基或-O-為佳,以碳數1~5之伸烷基為較佳,以伸甲基為最佳。In the aforementioned general formulas (a2-r-2), (a2-r-3), and (a2-r-5), the alkylene group with 1 to 5 carbons in A" can be linear or branched The alkylene group is preferred, such as: methylene group, ethylidene group, n-propylidene group, isopropylidene group, etc. When the alkylene group contains an oxygen atom or a sulfur atom, its specific example is as follows: The group obtained by interposing -O- or -S- at the end of the alkyl group or between carbon atoms, such as: -O-CH 2 -, -CH 2 -O-CH 2 -, -S-CH 2 -, -CH 2 -S-CH 2 - etc. A" is preferably an alkylene group with 1 to 5 carbons or -O-, preferably an alkylene group with 1 to 5 carbons, and a methylene group is the most good.

以下為列舉通式(a2-r-1)~(a2-r-7)所各別表示之基的具體例。Specific examples of groups represented by the general formulas (a2-r-1) to (a2-r-7) are listed below.

Figure 02_image077
Figure 02_image077

Figure 02_image079
Figure 02_image079

「含-SO2 -之環式基」係指,其環骨架中含有含-SO2 -之環的環式基之意,具體而言,為-SO2 -中的硫原子(S)形成為環式基的環骨架之一部份的環式基。以其環骨架中含有含-SO2 -之環作為1個環之方式計數,僅為該環時稱為單環式基,尚具有其他環結構時,無論其結構為何,皆稱為多環式基。含-SO2 -之環式基,可為單環式基亦可、多環式基亦可。 含-SO2 -之環式基,特別是其環骨架中含有-O-SO2 -之環式基,即,以含有-O-SO2 -中的-O-S-形成為環骨架的一部份之磺內酯(sultone)環的環式基為佳。 含-SO2 -之環式基,更具體而言,可列舉如:下述通式(a5-r-1)~(a5-r-4)所各別表示之基等。"Cyclic group containing -SO 2 -" means a cyclic group containing a ring containing -SO 2 - in its ring skeleton, specifically, it is formed by the sulfur atom (S) in -SO 2 - A cyclic group that is part of the ring skeleton of the cyclic group. It is counted by counting a ring containing -SO 2 - in its ring skeleton as one ring. When it is only this ring, it is called a monocyclic group. When it has other ring structures, it is called a polycyclic group regardless of its structure. Formula base. The cyclic group containing -SO 2 - may be a monocyclic group or a polycyclic group. A cyclic group containing -SO 2 -, especially a cyclic group containing -O-SO 2 - in its ring skeleton, that is, the -OS- containing -O-SO 2 - is formed as a part of the ring skeleton A cyclic group with a part of sultone ring is preferred. The cyclic group containing -SO 2 - includes, for example, groups respectively represented by the following general formulas (a5-r-1) to (a5-r-4), etc. more specifically.

Figure 02_image081
[式中,Ra’51 各別獨立為氫原子、烷基、烷氧基、鹵素原子、鹵化烷基、羥基、-COOR”、-OC(=O)R”、羥烷基或氰基。R”為氫原子、烷基、含內酯之環式基、含碳酸酯之環式基,或含-SO2 -之環式基。A”為可含有氧原子或硫原子的碳數1~5之伸烷基、氧原子或硫原子。 n’為0~2之整數]。
Figure 02_image081
[wherein, Ra'51 are each independently a hydrogen atom, an alkyl group, an alkoxy group, a halogen atom, an alkyl halide, a hydroxyl group, -COOR", -OC(=O)R", a hydroxyalkyl group or a cyano group. R" is a hydrogen atom, an alkyl group, a lactone-containing cyclic group, a carbonate-containing cyclic group, or a -SO 2 --containing cyclic group. A" is a carbon number 1 that may contain an oxygen atom or a sulfur atom ~5 alkylene groups, oxygen atoms or sulfur atoms. n' is an integer from 0 to 2].

前述通式(a5-r-1)~(a5-r-2)中,A”與前述通式(a2-r-2)、(a2-r-3)、(a2-r-5)中之A”為相同之內容。 Ra’51 中之烷基、烷氧基、鹵素原子、鹵化烷基、 -COOR”、-OC(=O)R”、羥烷基,分別與前述通式(a2-r-1)~(a2-r-7)中之Ra’21 的說明中所列舉者為相同之內容等。 以下為列舉通式(a5-r-1)~(a5-r-4)所各別表示之基的具體例。式中之「Ac」,為表示乙醯基。In the aforementioned general formulas (a5-r-1) to (a5-r-2), A" is the same as in the aforementioned general formulas (a2-r-2), (a2-r-3), and (a2-r-5) "A" has the same content. The alkyl group, alkoxyl group, halogen atom, halogenated alkyl group, -COOR", -OC(=O)R", and hydroxyalkyl group in Ra' 51 are respectively related to the aforementioned general formula (a2-r-1)~( The ones listed in the description of Ra'21 in a2-r-7) are the same contents and the like. Specific examples of groups represented by the general formulas (a5-r-1) to (a5-r-4) are listed below. "Ac" in the formula means an acetyl group.

Figure 02_image083
Figure 02_image083

Figure 02_image085
Figure 02_image085

Figure 02_image087
Figure 02_image087

「含碳酸酯之環式基」係指,其環骨架中含有含-O-C(=O)-O-之環(碳酸酯環)的環式基之意。以碳酸酯環作為1個環之方式計數,僅為碳酸酯環時稱為單環式基,尚具有其他環結構時,無論其結構為何,皆稱為多環式基。含碳酸酯之環式基,可為單環式基亦可、多環式基亦可。 含碳酸酯環之環式基,並未有特別限定,而可使用任意之成份。具體而言,可列舉如:下述通式(ax3-r-1)~(ax3-r-3)所各別表示之基等。The "carbonate-containing cyclic group" means a cyclic group containing a ring (carbonate ring) containing -O-C(=O)-O- in its ring skeleton. The carbonate ring is counted as one ring, and when there is only a carbonate ring, it is called a monocyclic group, and when it has other ring structures, it is called a polycyclic group regardless of the structure. The carbonate-containing cyclic group may be a monocyclic group or a polycyclic group. The cyclic group containing a carbonate ring is not particularly limited, and arbitrary components can be used. Specifically, groups represented by the following general formulas (ax3-r-1) to (ax3-r-3), etc. are mentioned, respectively.

Figure 02_image089
[式中,Ra’x31 各別獨立為氫原子、烷基、烷氧基、鹵素原子、鹵化烷基、羥基、-COOR”、-OC(=O)R”、羥烷基或氰基。R”為氫原子、烷基、含內酯之環式基、含碳酸酯之環式基,或含-SO2 -之環式基。A”為可含有氧原子或硫原子的碳數1~5之伸烷基、氧原子或硫原子。p’為0~3之整數,q’為0或1]。
Figure 02_image089
[In the formula, Ra'x31 are each independently a hydrogen atom, an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, -COOR", -OC(=O)R", a hydroxyalkyl group or a cyano group. R" is a hydrogen atom, an alkyl group, a lactone-containing cyclic group, a carbonate-containing cyclic group, or a -SO 2 --containing cyclic group. A" is a carbon number 1 that may contain an oxygen atom or a sulfur atom ~5 alkylene groups, oxygen atoms or sulfur atoms. p' is an integer of 0 to 3, and q' is 0 or 1].

前述通式(ax3-r-2)~(ax3-r-3)中,A”與前述通式(a2-r-2)、(a2-r-3)、(a2-r-5)中之A”為相同之內容。 Ra’31 中之烷基、烷氧基、鹵素原子、鹵化烷基、 -COOR”、-OC(=O)R”、羥烷基,分別與前述通式(a2-r-1)~(a2-r-7)中之Ra’21 的說明中所列舉者為相同之內容等。 以下為列舉通式(ax3-r-1)~(ax3-r-3)所各別表示之基的具體例。In the aforementioned general formula (ax3-r-2) ~ (ax3-r-3), A" is the same as in the aforementioned general formula (a2-r-2), (a2-r-3), (a2-r-5) "A" has the same content. The alkyl group, alkoxyl group, halogen atom, halogenated alkyl group, -COOR ", -OC(=O)R ", hydroxyalkyl group in Ra' 31 are respectively the same as the aforementioned general formula (a2-r-1)~( The ones listed in the description of Ra'21 in a2-r-7) are the same contents and the like. Specific examples of groups represented by the general formulas (ax3-r-1) to (ax3-r-3) are listed below.

Figure 02_image091
Figure 02_image091

結構單位(a2)中,又以由α位的碳原子鍵結之氫原子可被取代基所取代的丙烯酸酯所衍生的結構單位為佳。 該結構單位(a2)的較佳具體例,可列舉如:下述通式(a2-1)所表示的結構單位等。Among the structural units (a2), structural units derived from acrylates in which hydrogen atoms bonded to carbon atoms at the α-position can be replaced by substituents are preferred. Preferable specific examples of the structural unit (a2) include, for example, structural units represented by the following general formula (a2-1).

Figure 02_image093
[式中,R為氫原子、碳數1~5之烷基或碳數1~5之鹵化烷基;Ya21 為單鍵或2價之連結基。La21 為-O-、-COO-、 -CON(R’)-、-OCO-、-CONHCO-或-CONHCS-,R’表示氫原子或甲基。其中,La21 為-O-時,Ya21 不為-CO-。Ra21 為含內酯之環式基、含-SO2 -之環式基或含碳酸酯之環式基]。
Figure 02_image093
[In the formula, R is a hydrogen atom, an alkyl group with 1 to 5 carbons, or a halogenated alkyl group with 1 to 5 carbons; Ya 21 is a single bond or a divalent linking group. La 21 is -O-, -COO-, -CON(R')-, -OCO-, -CONHCO- or -CONHCS-, and R' represents a hydrogen atom or a methyl group. Wherein, when La 21 is -O-, Ya 21 is not -CO-. Ra 21 is a lactone-containing cyclic group, a -SO 2 --containing cyclic group, or a carbonate-containing cyclic group].

前述式(a2-1)中,R與前述為相同之內容。 R以氫原子、碳數1~5之烷基或碳數1~5之氟化烷基為佳,就工業上取得之容易度而言,以氫原子或甲基為特佳。In the above-mentioned formula (a2-1), R is the same as above. R is preferably a hydrogen atom, an alkyl group having 1 to 5 carbons, or a fluorinated alkyl group having 1 to 5 carbons, and particularly preferably a hydrogen atom or a methyl group in terms of industrial availability.

前述式(a2-1)中,Ya21 的2價之連結基,並未有特別之限定,又以可具有取代基的2價之烴基、含有雜原子的2價之連結基等為較佳之例示。In the aforementioned formula (a2-1), the divalent linking group of Ya 21 is not particularly limited, and a divalent hydrocarbon group which may have a substituent, a divalent linking group containing a heteroatom, etc. are preferred. instantiate.

Ya21 中作為2價之烴基,可列舉如:與上述式(a1-1)中的Va1 中的2價之烴基的說明中所列舉之基為相同之內容等。Ya21 中的2價之烴基可具有的取代基,可列舉如:碳數1~5之烷基、烷氧基、鹵素原子、碳數1~5之鹵化烷基、羥基、羰基等。Examples of the divalent hydrocarbon group in Ya 21 include the same groups as those listed in the description of the divalent hydrocarbon group in Va 1 in the above formula (a1-1). The substituent that the divalent hydrocarbon group in Ya 21 may have includes, for example, an alkyl group having 1 to 5 carbons, an alkoxy group, a halogen atom, a halogenated alkyl group having 1 to 5 carbons, a hydroxyl group, and a carbonyl group.

Ya21 中,含有雜原子的2價之連結基的較佳基團,可列舉如:-O-、-C(=O)-O-、-C(=O)-、-O-C(=O)-O-、 -C(=O)-NH-、-NH-、-NH-C(=NH)-(H可被烷基、醯基等的取代基所取代)、-S-、-S(=O)2 -、-S(=O)2 -O-、通式-Y21 -O-Y22 -、 -Y21 -O-、-Y21 -C(=O)-O-、-C(=O)-O-Y21 -、-[Y21 -C(=O)-O]m” -Y22 -、-Y21 -O-C(=O)-Y22 - 或-Y21 -S(=O)2 -O-Y22 -所表示之基[式中,Y21 及Y22 各別獨立為可具有取代基的2價之烴基,O為氧原子,m”為0~3之整數]等。 前述含有雜原子的2價之連結基為-C(=O)-NH-、 -C(=O)-NH-C(=O)-、-NH-、-NH-C(=NH)-時,該H可被烷基、醯基等的取代基所取代。該取代基(烷基、醯基等),以碳數為1~10為佳,以1~8為更佳,以1~5為特佳。 通式-Y21 -O-Y22 -、-Y21 -O-、-Y21 -C(=O)-O-、-C(=O)-O-Y21 -、 -[Y21 -C(=O)-O]m” -Y22 -、-Y21 -O-C(=O)-Y22 -或-Y21 -S(=O)2 -O-Y22 - 中,Y21 及Y22 各別獨立為可具有取代基的2價之烴基。該2價之烴基,例如:與前述2價之連結基的說明中所列舉的(可具有取代基的2價之烴基)為相同之內容等。 Y21 以直鏈狀之脂肪族烴基為佳,以直鏈狀之伸烷基為較佳,以碳數1~5之直鏈狀之伸烷基為更佳,以伸甲基或伸乙基為特佳。 Y22 以直鏈狀或支鏈狀之脂肪族烴基為佳,以伸甲基、伸乙基或烷基伸甲基為較佳。該烷基伸甲基中之烷基,以碳數1~5之直鏈狀之烷基為佳,以碳數1~3之直鏈狀之烷基為較佳,以甲基為最佳。 式-[Y21 -C(=O)-O]m” -Y22 -所表示之基中,m”為0~3之整數,又以0~2之整數為佳,以0或1為較佳,以1為特佳。即,式-[Y21 -C(=O)-O]m” -Y22 -所表示之基,以式 -Y21 -C(=O)-O-Y22 -所表示之基為特佳。其中,又以式 -(CH2 )a’ -C(=O)-O-(CH2 )b’ -所表示之基為佳。該式中,a’為1~10之整數,又以1~8之整數為佳,以1~5之整數為較佳,以1或2為更佳,以1為最佳。b’為1~10之整數,又以1~8之整數為佳,以1~5之整數為較佳,以1或2為更佳,以1為最佳。In Ya 21 , preferred groups of divalent linking groups containing heteroatoms include: -O-, -C(=O)-O-, -C(=O)-, -OC(=O )-O-, -C(=O)-NH-, -NH-, -NH-C(=NH)-(H can be replaced by substituents such as alkyl, acyl, etc.), -S-, - S(=O) 2 -, -S(=O) 2 -O-, general formula -Y 21 -OY 22 -, -Y 21 -O-, -Y 21 -C(=O)-O-, - C(=O)-OY 21 -, -[Y 21 -C(=O)-O] m” -Y 22 -, -Y 21 -OC(=O)-Y 22 - or -Y 21 -S( A group represented by =O) 2 -OY 22 - [wherein, Y 21 and Y 22 are each independently a divalent hydrocarbon group that may have a substituent, O is an oxygen atom, m" is an integer of 0 to 3], etc. . The aforementioned divalent linking groups containing heteroatoms are -C(=O)-NH-, -C(=O)-NH-C(=O)-, -NH-, -NH-C(=NH)- When , this H may be substituted by a substituent such as an alkyl group or an acyl group. The substituent (alkyl group, acyl group, etc.) preferably has 1-10 carbon atoms, more preferably 1-8 carbon atoms, and particularly preferably 1-5 carbon atoms. General formula -Y 21 -OY 22 -, -Y 21 -O-, -Y 21 -C(=O)-O-, -C(=O)-OY 21 -, -[Y 21 -C(=O )-O] m” -Y 22 -, -Y 21 -OC(=O)-Y 22 - or -Y 21 -S(=O) 2 -OY 22 -, Y 21 and Y 22 are independently A divalent hydrocarbon group that may have a substituent. The divalent hydrocarbon group is, for example, the same as that listed above in the description of the divalent linking group (divalent hydrocarbon group that may have a substituent). Y 21 The linear aliphatic hydrocarbon group is preferred, the linear alkylene group is preferred, the linear alkylene group with 1 to 5 carbons is more preferred, and the methylene or ethylene group is preferred. Especially preferred. Y 22 is preferably a straight-chain or branched aliphatic hydrocarbon group, preferably a methyl group, an ethyl group or an alkyl group. The alkyl group in the alkyl group is represented by the number of carbons A linear alkyl group with 1 to 5 carbon atoms is preferred, a linear alkyl group with 1 to 3 carbon atoms is preferred, and methyl is the most preferred. Formula -[Y 21 -C(=O)-O ] m" -Y 22 - In the base represented, m" is an integer of 0 to 3, preferably an integer of 0 to 2, preferably 0 or 1, and particularly preferably 1. That is, the formula- The group represented by [Y 21 -C(=O)-O] m” -Y 22 - is particularly preferably represented by the formula -Y 21 -C(=O)-OY 22 -. Among them, the group represented by the formula -(CH 2 ) a' -C(=O)-O-(CH 2 ) b' - is preferable. In the formula, a' is an integer of 1-10, preferably an integer of 1-8, more preferably an integer of 1-5, more preferably 1 or 2, and most preferably 1. b' is an integer of 1-10, preferably an integer of 1-8, more preferably an integer of 1-5, more preferably 1 or 2, and most preferably 1.

Ya21 以單鍵、酯鍵結[-C(=O)-O-]、醚鍵結 (-O-)、直鏈狀或支鏈狀的伸烷基,或該些之組合為佳。Ya 21 is preferably a single bond, an ester bond [-C(=O)-O-], an ether bond (-O-), a linear or branched alkylene group, or a combination thereof.

前述式(a2-1)中,La21 為-O-、-COO-、-CON(R’)-、 -OCO-、-CONHCO-或-CONHCS-。 R’表示氫原子或甲基。 其中,La21 為-O-時,Ya21 不為-CO-。In the aforementioned formula (a2-1), La 21 is -O-, -COO-, -CON(R')-, -OCO-, -CONHCO- or -CONHCS-. R' represents a hydrogen atom or a methyl group. Wherein, when La 21 is -O-, Ya 21 is not -CO-.

前述式(a2-1)中,Ra21 為含內酯之環式基、含-SO2 -之環式基或含碳酸酯之環式基。 Ra21 中之含內酯之環式基、含-SO2 -含有環式基、含碳酸酯之環式基,分別以上述通式(a2-r-1)~(a2-r-7)所各別表示之基、通式(a5-r-1)~(a5-r-4)所各別表示之基、通式(ax3-r-1)~(ax3-r-3)所各別表示之基為較佳之例示。 其中,Ra21 又以含內酯之環式基或含-SO2 -之環式基為佳,以前述通式(a2-r-1)、(a2-r-2)、(a2-r-6)或(a5-r-1)所各別表示之基為較佳。具體而言,以前述化學式(r-lc-1-1)~(r-lc-1-7)、(r-lc-2-1)~(r-lc-2-18)、(r-lc-6-1)、(r-sl-1-1)、(r-sl-1-18)各別表示之任一基團為較佳。In the aforementioned formula (a2-1), Ra 21 is a lactone-containing cyclic group, a -SO 2 --containing cyclic group, or a carbonate-containing cyclic group. The lactone-containing cyclic group, -SO 2 -containing cyclic group, and carbonate-containing cyclic group in Ra 21 are represented by the above general formulas (a2-r-1)~(a2-r-7) The groups represented separately, the groups represented by the general formulas (a5-r-1) to (a5-r-4), the groups represented by the general formulas (ax3-r-1) to (ax3-r-3) The basis of different representation is a better example. Among them, Ra 21 is preferably a cyclic group containing lactone or a cyclic group containing -SO 2 -, and the aforementioned general formula (a2-r-1), (a2-r-2), (a2-r The groups represented by -6) or (a5-r-1) are preferable. Specifically, with the aforementioned chemical formulas (r-lc-1-1) ~ (r-lc-1-7), (r-lc-2-1) ~ (r-lc-2-18), (r- Any one of the groups represented by lc-6-1), (r-sl-1-1), and (r-sl-1-18) respectively is preferable.

(A1)成份具有的結構單位(a2),可為1種亦可、2種以上亦可。 (A1)成份具有結構單位(a2)時,結構單位(a2)之比例,相對於該構成(A1)成份的全結構單位之合計(100莫耳%),以1~80莫耳%為佳,以3~70莫耳%為較佳,以5~60莫耳%為更佳,以5~50莫耳%為更佳。 結構單位(a2)之比例,於前述較佳範圍的下限值以上時,基於前述之效果,於含有結構單位(a2)時,可得到充份的效果。另一方面,結構單位(a2)之比例,於前述較佳範圍的上限值以下時,可容易取得與其他結構單位之平衡,而可使各種微影蝕刻特性更良好。(A1) The structural unit (a2) which a component has may be 1 type, or 2 or more types may be sufficient. When the component (A1) has a structural unit (a2), the ratio of the structural unit (a2) to the total (100 mol%) of all structural units constituting the component (A1) is preferably 1 to 80 mol%. , preferably 3-70 mol%, more preferably 5-60 mol%, more preferably 5-50 mol%. When the ratio of the structural unit (a2) is more than the lower limit value of the above-mentioned preferred range, based on the above-mentioned effect, when the structural unit (a2) is contained, a sufficient effect can be obtained. On the other hand, when the proportion of the structural unit (a2) is below the upper limit of the above-mentioned preferred range, it is easy to achieve a balance with other structural units, so that various lithographic etching properties can be improved.

結構單位(a3): (A1)成份,除結構單位(a0)以外,可再具有:含有含極性基之脂肪族烴基的結構單位(a3)(其中,相當於上述結構單位(a1)、結構單位(a2)之任一結構單位者除外)。 (A1)成份具有具適當結構的結構單位(a3)時,例如於可適當地調整酸之擴散長度、提高阻劑膜對基盤之密著性、適度地調整顯影時的溶解性、提高耐蝕刻性等的效果,而可使微影蝕刻特性等更為良好。Structural unit (a3): The component (A1) may have, in addition to the structural unit (a0), a structural unit (a3) containing an aliphatic hydrocarbon group containing a polar group (wherein, it corresponds to any of the above-mentioned structural unit (a1) and structural unit (a2) except for a structural unit). When the component (A1) has a structural unit (a3) with an appropriate structure, for example, it can properly adjust the diffusion length of the acid, improve the adhesion of the resist film to the substrate, moderately adjust the solubility during development, and improve the etching resistance. The effects of properties, etc., can make the lithographic etching properties more favorable.

極性基,可列舉如:羥基、氰基、羧基、烷基的氫原子中之一部份被氟原子取代而得之羥烷基等,特別又以羥基為佳。 脂肪族烴基,可列舉如:碳數1~10之直鏈狀或支鏈狀之烴基(較佳為伸烷基),或環狀之脂肪族烴基(環式基)等。該環式基,可為單環式基亦可、多環式基亦可,例如可由ArF準分子雷射用阻劑組成物用的樹脂中,被多數提案的成份中適當地選擇使用。該環式基以多環式基為佳,以碳數7~30為較佳。 其中,又以由含有羥基、氰基、羧基,或含有烷基的氫原子中之一部份被氟原子取代而得之羥烷基的脂肪族多環式基之丙烯酸酯所衍生的結構單位為較佳。該多環式基,可列舉如:由雙環鏈烷、三環鏈烷、四環鏈烷等去除2個以上的氫原子而得之基等。具體而言,可列舉如:由金剛烷、降莰烷、異莰烷、三環癸烷、四環十二烷等之多環鏈烷去除2個以上的氫原子而得之基等。該些多環式基之中,又以由金剛烷去除2個以上的氫原子而得之基、由降莰烷去除2個以上的氫原子而得之基、由四環十二烷去除2個以上的氫原子而得之基,就工業上為較佳。Polar groups include, for example, hydroxyl groups, cyano groups, carboxyl groups, and hydroxyalkyl groups in which some of the hydrogen atoms of alkyl groups are replaced by fluorine atoms. Hydroxyl groups are particularly preferred. The aliphatic hydrocarbon group includes, for example, a straight-chain or branched-chain hydrocarbon group (preferably an alkylene group) having 1 to 10 carbon atoms, or a cyclic aliphatic hydrocarbon group (cyclic group). The cyclic group may be a monocyclic group or a polycyclic group, and may be appropriately selected and used among many proposed components in the resin for the resist composition for ArF excimer laser, for example. The cyclic group is preferably a polycyclic group, preferably having 7 to 30 carbon atoms. Among them, the structural unit derived from aliphatic polycyclic acrylate containing hydroxyl, cyano, carboxyl, or hydroxyalkyl containing a part of hydrogen atoms replaced by fluorine atoms is better. Examples of the polycyclic group include groups obtained by removing two or more hydrogen atoms from bicyclic alkanes, tricyclic alkanes, tetracyclic alkanes, and the like. Specific examples thereof include groups obtained by removing two or more hydrogen atoms from polycyclic alkanes such as adamantane, norbornane, isobornane, tricyclodecane, and tetracyclododecane. Among these polycyclic groups, the group obtained by removing two or more hydrogen atoms from adamantane, the group obtained by removing two or more hydrogen atoms from norbornane, and the group obtained by removing two or more hydrogen atoms from tetracyclododecane The base derived from more than one hydrogen atom is industrially preferred.

結構單位(a3),只要為含有含極性基之脂肪族烴基時,並未有特別限定,而可使用任意之成份。 結構單位(a3)中,以由α位的碳原子鍵結之氫原子可被取代基所取代的丙烯酸酯所衍生的結構單位,且含有含極性基之脂肪族烴基的結構單位為佳。 結構單位(a3),於含極性基之脂肪族烴基中的烴基為碳數1~10之直鏈狀或支鏈狀的烴基時,以由丙烯酸的羥乙酯所衍生的結構單位為佳,該烴基為多環式基時,以下述式(a3-1)所表示的結構單位、式(a3-2)所表示的結構單位、式(a3-3)所表示的結構單位為較佳之例示。The structural unit (a3) is not particularly limited as long as it contains a polar group-containing aliphatic hydrocarbon group, and any component can be used. The structural unit (a3) is preferably a structural unit derived from an acrylic ester in which a hydrogen atom bonded to a carbon atom at the α position can be replaced by a substituent, and a structural unit containing an aliphatic hydrocarbon group containing a polar group. Structural unit (a3), when the hydrocarbon group in the aliphatic hydrocarbon group containing a polar group is a linear or branched hydrocarbon group with 1 to 10 carbons, the structural unit derived from hydroxyethyl acrylate is preferred, When the hydrocarbon group is a polycyclic group, the structural unit represented by the following formula (a3-1), the structural unit represented by the formula (a3-2), and the structural unit represented by the formula (a3-3) are preferably exemplified .

Figure 02_image095
[式中,R與前述為相同內容,j為1~3之整數,k為1~3之整數,t’為1~3之整數,l為1~5之整數,s為1~3之整數]。
Figure 02_image095
[In the formula, R is the same as above, j is an integer of 1 to 3, k is an integer of 1 to 3, t' is an integer of 1 to 3, l is an integer of 1 to 5, s is an integer of 1 to 3 integer].

式(a3-1)中,j以1或2為佳,以1為更佳。j為2時,羥基以鍵結於金剛烷基的3位與5位者為佳。j為1時,羥基以鍵結於金剛烷基的3位者為佳。 j以1為佳,羥基以鍵結於金剛烷基的3位者為特佳。In formula (a3-1), j is preferably 1 or 2, more preferably 1. When j is 2, the hydroxyl group is preferably bonded to the 3-position and 5-position of the adamantyl group. When j is 1, the hydroxyl group is preferably bonded to the third position of the adamantyl group. Preferably j is 1, and the hydroxyl group is particularly preferably bonded to the 3rd position of the adamantyl group.

式(a3-2)中,k以1為佳。氰基以鍵結於降莰基的5位或6位者為佳。In formula (a3-2), k is preferably 1. The cyano group is preferably bonded to the 5- or 6-position of the norbornyl group.

式(a3-3)中,t’以1為佳。l以1為佳。s以1為佳。該些以於丙烯酸的羧基末端,鍵結2-降莰基或3-降莰基者為佳。氟化烷醇以鍵結於降莰基的5或6位者為佳。In formula (a3-3), t' is preferably 1. l is preferably 1. s is preferably 1. These are preferably those in which a 2-norbornyl group or a 3-norbornyl group is bonded to the carboxyl terminal of acrylic acid. The fluorinated alkanol is preferably bonded to the 5 or 6 position of the norbornyl group.

(A1)成份具有的結構單位(a3),可為1種亦可、2種以上亦可。 (A1)成份具有結構單位(a3)時,結構單位(a3)之比例,相對於該構成(A1)成份的全結構單位之合計(100莫耳%),以1~50莫耳%為佳,以3~40莫耳%為較佳,以5~30莫耳%為更佳,以10~30莫耳%為特佳。 結構單位(a3)之比例,於較佳的下限值以上時,基於前述之效果,於含有結構單位(a3)時可得到充份的效果。另一方面,結構單位(a3)之比例,於較佳的上限值以下時,可容易取得與其他結構單位之平衡,而可使各種微影蝕刻特性更良好。(A1) The structural unit (a3) which a component has may be 1 type or 2 or more types. When the component (A1) has a structural unit (a3), the ratio of the structural unit (a3) to the total (100 mol%) of all structural units constituting the component (A1) is preferably 1 to 50 mol%. , preferably 3-40 mol%, more preferably 5-30 mol%, and particularly preferably 10-30 mol%. When the proportion of the structural unit (a3) is more than the preferable lower limit, based on the above-mentioned effects, sufficient effects can be obtained when the structural unit (a3) is contained. On the other hand, when the proportion of the structural unit (a3) is below the preferred upper limit, it is easy to achieve a balance with other structural units, and various lithographic etching properties can be improved.

結構單位(a4): (A1)成份,除結構單位(a0)以外,可再具有含有非酸解離性之脂肪族環式基的結構單位(a4)。 (A1)成份具有結構單位(a4)時,可提高所形成的阻劑圖型之耐乾蝕刻性。又,亦可提高(A)成份的疏水性。疏水性之提高,特別是於溶劑顯影製程之情形,可期待提升解析性、阻劑圖型形狀等。 結構單位(a4)中之「非酸解離性環式基」,係指經由曝光而於該阻劑組成物中產生酸之際(例如:由曝光而產生酸的結構單位或(B)成份產生酸之際),即使受到該酸之作用也不會發生解離,而仍殘留於該結構單位中的環式基。Structural unit (a4): The component (A1) may further have a structural unit (a4) containing a non-acid dissociative aliphatic cyclic group in addition to the structural unit (a0). When the component (A1) has the structural unit (a4), the dry etching resistance of the formed resist pattern can be improved. Moreover, the hydrophobicity of (A) component can also be raised. The improvement of hydrophobicity, especially in the case of solvent development process, can be expected to improve resolution, resist pattern shape, etc. The "non-acid dissociative cyclic group" in the structural unit (a4) refers to when an acid is generated in the resist composition by exposure (for example: generated by the structural unit or (B) component that generates an acid by exposure acid), a cyclic group that remains in the structural unit without dissociation even when subjected to the action of the acid.

結構單位(a4),例如以由含有非酸解離性之脂肪族環式基的丙烯酸酯所衍生的結構單位等為佳。該環式基可使用ArF準分子雷射用、KrF準分子雷射用(較佳為ArF準分子雷射用)等的阻劑組成物之樹脂成份所使用的以往已知的多數基團。 該環式基,就工業上容易取得等觀點,特別是以由三環癸基、金剛烷基、四環十二烷基、異莰基、降莰基所選出之至少1種為佳。該些多環式基,可具有作為取代基的碳數1~5之直鏈狀或支鏈狀之烷基。 結構單位(a4),具體而言,可列舉如:下述通式(a4-1)~(a4-7)各別表示之結構單位等例示。The structural unit (a4) is preferably, for example, a structural unit derived from an acrylate containing a non-acid-dissociable aliphatic cyclic group. As the cyclic group, many conventionally known groups used in resin components of resist compositions such as those for ArF excimer lasers and KrF excimer lasers (preferably for ArF excimer lasers) can be used. The cyclic group is particularly preferably at least one selected from the group consisting of tricyclodecanyl, adamantyl, tetracyclododecyl, isobornyl and norbornyl from the standpoint of industrial availability. These polycyclic groups may have a linear or branched alkyl group having 1 to 5 carbon atoms as a substituent. As for the structural unit (a4), specifically, structural units represented by the following general formulas (a4-1) to (a4-7), etc. are exemplified, for example.

Figure 02_image097
[式中,Rα 與前述為相同內容]。
Figure 02_image097
[In the formula, R α is the same as the above].

(A1)成份具有的結構單位(a4),可為1種亦可、2種以上亦可。 (A1)成份具有結構單位(a4)時,結構單位(a4)之比例,相對於構成該(A1)成份的全結構單位之合計(100莫耳%),以1~40莫耳%為佳,以5~20莫耳%為較佳。 結構單位(a4)之比例,於較佳的下限值以上時,基於前述之效果,含有結構單位(a4)時,可得到充份的效果。另一方面,單位(a4)之比例,於較佳的上限值以下時,可容易取得與其他結構單位之平衡,而可使各種微影蝕刻特性更良好。(A1) The structural unit (a4) which a component has may be 1 type or 2 or more types. When the component (A1) has a structural unit (a4), the ratio of the structural unit (a4) to the total (100 mol%) of all structural units constituting the component (A1) is preferably 1 to 40 mol%. , preferably 5-20 mol%. When the proportion of the structural unit (a4) is more than the preferable lower limit value, based on the above-mentioned effects, when the structural unit (a4) is contained, sufficient effects can be obtained. On the other hand, when the proportion of the unit (a4) is below the preferred upper limit, it is easy to achieve a balance with other structural units, and to make various lithographic etching properties better.

由苯乙烯或其衍生物所衍生的結構單位(結構單位(st)): 「苯乙烯」,為包含苯乙烯及苯乙烯的α位之氫原子被烷基、鹵化烷基等的取代基取代而得者之概念。此處作為取代基之烷基,可列舉如:碳數1~5之烷基等,作為該取代基之鹵化烷基,可列舉如:碳數1~5之鹵化烷基等。 「苯乙烯衍生物」係指,α位之氫原子可被取代基所取代的苯乙烯之苯環上鍵結取代基者等。 又,α位(α位之碳原子),於無特別限定時,係指苯環上所鍵結的碳原子之意。 「苯乙烯所衍生的結構單位」、「苯乙烯衍生物所衍生的結構單位」係指,苯乙烯或苯乙烯衍生物的乙烯性雙鍵經開裂而構成的結構單位之意。 (A1)成份具有的結構單位(st),可為1種亦可、2種以上亦可。 (A1)成份具有結構單位(st)時,結構單位(st)之比例,相對於構成(A1)成份的全結構單位之合計(100莫耳%),以1~30莫耳%為佳,以3~20莫耳%為較佳。Structural units derived from styrene or its derivatives (structural unit (st)): "Styrene" is a concept including styrene and a hydrogen atom at the alpha position of styrene is substituted with a substituent such as an alkyl group or a halogenated alkyl group. Here, the alkyl group as the substituent includes, for example, an alkyl group having 1 to 5 carbon atoms, and the halogenated alkyl group as the substituent includes, for example, a halogenated alkyl group having 1 to 5 carbon atoms. "Styrene derivative" means a substituent bonded to the benzene ring of styrene in which the hydrogen atom at the α position may be substituted by a substituent. Also, the α-position (carbon atom at the α-position) means the carbon atom bonded to the benzene ring unless otherwise specified. "Structural unit derived from styrene" and "structural unit derived from styrene derivative" mean a structural unit formed by cleavage of the ethylenic double bond of styrene or a styrene derivative. (A1) The structural unit (st) which a component has may be 1 type or 2 or more types. When the component (A1) has a structural unit (st), the proportion of the structural unit (st) is preferably 1 to 30 mol% relative to the total of all structural units constituting the component (A1) (100 mol%), 3-20 mol% is preferred.

本實施形態之阻劑組成物中,(A1)成份,以含有具有結構單位(a0),與必要時的其他結構單位之共聚物((A1-1)成份)者為佳。 該(A1-1)成份,具體而言,可列舉如:結構單位(a0)與結構單位(a10)之重複結構所構成之高分子化合物、結構單位(a0)與結構單位(a10)與結構單位(a2)之重複結構所構成之高分子化合物、結構單位(a0)與結構單位(a10)與結構單位(a3)之重複結構所構成之高分子化合物等例示。In the resist composition of this embodiment, the component (A1) preferably contains a copolymer (component (A1-1)) having the structural unit (a0) and other structural units if necessary. The (A1-1) component, specifically, can include, for example: a polymer compound composed of a repeating structure of a structural unit (a0) and a structural unit (a10), a structural unit (a0) and a structural unit (a10) and a structural A polymer compound composed of a repeating structure of the unit (a2), a polymer compound composed of a repeating structure of the structural unit (a0) and the structural unit (a10) and the structural unit (a3), etc. are exemplified.

≪(A2)成份≫ 本實施形態之阻劑組成物中,(A)成份,可併用不相當於前述(A1)成份的經由酸之作用而對顯影液之溶解性產生變化的基材成份(以下,亦稱為「(A2)成份」)。 (A2)成份,並未有特別之限定,其可由以往已知作為化學增強型阻劑組成物用的基材成份的多數成份中任意地選擇使用。 (A2)成份,可單獨使用1種高分子化合物或低分子化合物,或將2種以上組合使用皆可。≪(A2) Ingredients≫ In the resist composition of the present embodiment, component (A) may be used in combination with a substrate component (hereinafter, also referred to as "substrate component") that does not correspond to the aforementioned component (A1) and whose solubility in a developer solution changes through the action of an acid. (A2) Ingredients"). The component (A2) is not particularly limited, and it can be arbitrarily selected from many components conventionally known as substrate components for chemically amplified resist compositions. (A2) As a component, one kind of high molecular weight compound or low molecular weight compound may be used alone, or two or more kinds may be used in combination.

(A1)成份之質量平均分子量(Mw)(凝膠滲透層析(GPC)之聚苯乙烯換算基準),並未有特別之限定,又以1000~50000為佳,以2000~30000為較佳,以3000~20000為更佳。 (A1)成份之Mw於該範圍的較佳上限值以下時,作為阻劑使用時,對阻劑溶劑具有充份的溶解性,於該範圍的較佳下限值以上時,可具有良好的耐乾蝕刻性或阻劑圖型之斷面形狀。 (A1)成份之分散度(Mw/Mn),並未有特別之限定,一般以1.0~4.0左右為佳,以1.0~3.0左右為較佳,以1.0~2.5左右為特佳。又,Mn表示數平均分子量。(A1) The mass average molecular weight (Mw) of the component (polystyrene conversion basis of gel permeation chromatography (GPC)) is not particularly limited, and is preferably 1,000-50,000, more preferably 2,000-30,000 , preferably 3000-20000. When the Mw of the component (A1) is below the preferred upper limit of the range, it has sufficient solubility to the resist solvent when used as a resist, and when it is above the preferred lower limit of the range, it can have good The dry etching resistance or the cross-sectional shape of the resist pattern. (A1) The degree of dispersion (Mw/Mn) of the components is not particularly limited, but generally it is preferably about 1.0-4.0, more preferably about 1.0-3.0, and most preferably about 1.0-2.5. Also, Mn represents a number average molecular weight.

(A1)成份,可單獨使用1種亦可、將2種以上合併使用亦可。 (A)成份中,(A1)成份之比例,相對於(A)成份之總質量,以25質量%以上為佳,以50質量%以上為較佳,以75質量%以上為更佳,亦可為100質量%。該比例為25質量%以上時,可容易形成高感度化,或改善粗糙度等具有優良的各種微影蝕刻特性之阻劑圖型。(A1) The component may be used individually by 1 type, and may use it in combination of 2 or more types. Among components (A), the ratio of component (A1) to the total mass of component (A) is preferably at least 25% by mass, more preferably at least 50% by mass, more preferably at least 75% by mass, and It may be 100% by mass. When the ratio is 25% by mass or more, it is possible to easily form a resist pattern having various lithographic etching properties such as high sensitivity or improved roughness.

本實施形態之阻劑組成物中,(A)成份之含量,可配合所欲形成的阻劑膜厚度等作適當之調整。In the resist composition of this embodiment, the content of component (A) can be appropriately adjusted according to the thickness of the resist film to be formed.

<(B)成份> ・(B1)成份 (B)成份為經由曝光而產生酸之酸產生劑成份。本實施形態之阻劑組成物中,(B)成份,為含有由下述通式(b-1)所表示之化合物(b-1)(以下,亦稱為「(b-1)成份」)、下述通式(b-2)所表示之化合物(b-2)(以下,亦稱為「(b-2)成份」)及下述通式(b-3)所表示之化合物(b-3)(以下,亦稱為「(b-3)成份」)所成之群所選出之至少1種(以下,亦統稱為「(B1)成份」)。<Component (B)> ・(B1) Ingredients (B) The component is an acid generator component which generates acid by exposure. In the resist composition of the present embodiment, component (B) contains a compound (b-1) represented by the following general formula (b-1) (hereinafter also referred to as "component (b-1)") ), the compound (b-2) represented by the following general formula (b-2) (hereinafter also referred to as "(b-2) component") and the compound represented by the following general formula (b-3) ( At least one selected from the group consisting of b-3) (hereinafter, also referred to as "(b-3) component") (hereinafter, also collectively referred to as "(B1) component").

Figure 02_image099
[式中,R101 、R104 及R106 ,各別獨立為含有可具有取代基的芳香環之烴基;R105 、R107 及R108 ,各別獨立為可具有取代基之環式基、可具有取代基之鏈狀烷基,或可具有取代基之鏈狀烯基;R102 為氟原子或碳數1~5之氟化烷基。Y101 為單鍵或含有氧原子的2價之連結基。 V101 ~V103 各別獨立為單鍵、伸烷基或氟化伸烷基。L101 ~L102 各別獨立為單鍵或氧原子。L103 ~L105 各別獨立為單鍵、-CO-或-SO2 -。m為1以上之整數,且M’m+ 為m價之鎓陽離子]。
Figure 02_image099
[wherein, R 101 , R 104 and R 106 are each independently a hydrocarbon group containing an aromatic ring that may have a substituent; R 105 , R 107 and R 108 are each independently a cyclic group that may have a substituent, A chained alkyl group that may have a substituent, or a chained alkenyl group that may have a substituent; R 102 is a fluorine atom or a fluorinated alkyl group with 1 to 5 carbon atoms. Y101 is a single bond or a divalent linking group containing an oxygen atom. V 101 to V 103 are each independently a single bond, an alkylene group or a fluorinated alkylene group. L 101 to L 102 are each independently a single bond or an oxygen atom. L 103 to L 105 are each independently a single bond, -CO- or -SO 2 -. m is an integer of 1 or more, and M' m+ is an m-valent onium cation].

{陰離子部} ・(b-1)成份之陰離子部 式(b-1)中,R101 為含有可具有取代基的芳香環之烴基。 R101 之含有芳香環之烴基的碳數以3~30為佳,以碳數5~30為較佳,以碳數5~20為更佳,以碳數6~18為特佳。但,該碳數中,為不包含取代基中之碳數者。 R101 中之芳香族烴基所具有的芳香環,具體而言,可列舉如:苯、茀、萘、蒽、菲、聯苯,或構成該些芳香環的碳原子之一部份被雜原子取代而得之芳香族雜環等。芳香族雜環中之雜原子,可列舉如:氧原子、硫原子、氮原子等。 R101 之含有芳香環之烴基,具體而言,可列舉如:由前述芳香環去除1個氫原子而得之基(芳基:例如苯基、萘基等)、前述芳香環的氫原子中之1個被伸烷基取代而得之基(例如苄基、苯乙基、1-萘基甲基、2-萘基甲基、1-萘基乙基、2-萘基乙基等之芳烷基等)、由雙環庚烷、雙環辛烷等的交聯脂肪族環上縮合前述芳香族環而得之縮合環去除1個氫原子而得之基等。前述伸烷基(芳烷基中之烷鏈)之碳數,以1~4為佳,以碳數1~2為較佳,以碳數1為特佳。{Anionic part} ・In the anionic part of the component (b-1), in the formula (b-1), R 101 is a hydrocarbon group having an aromatic ring which may have a substituent. The aromatic ring-containing hydrocarbon group of R 101 preferably has 3-30 carbons, more preferably 5-30 carbons, more preferably 5-20 carbons, and particularly preferably 6-18 carbons. However, the carbon number does not include the carbon number in the substituent. The aromatic ring possessed by the aromatic hydrocarbon group in R 101 specifically includes: benzene, stilbene, naphthalene, anthracene, phenanthrene, biphenyl, or some of the carbon atoms constituting these aromatic rings are replaced by heteroatoms Aromatic heterocycles obtained by substitution, etc. The hetero atom in the aromatic heterocycle includes, for example, an oxygen atom, a sulfur atom, a nitrogen atom, and the like. The hydrocarbon group containing an aromatic ring of R 101 specifically includes, for example, a group obtained by removing one hydrogen atom from the aforementioned aromatic ring (aryl group: such as phenyl, naphthyl, etc.), among the hydrogen atoms of the aforementioned aromatic ring, One of them is substituted by an alkylene group (such as benzyl, phenethyl, 1-naphthylmethyl, 2-naphthylmethyl, 1-naphthylethyl, 2-naphthylethyl, etc. aralkyl, etc.), a group obtained by removing one hydrogen atom from a condensed ring obtained by condensing the aforementioned aromatic ring on a crosslinked aliphatic ring of bicycloheptane, bicyclooctane, etc. The carbon number of the aforementioned alkylene group (alkane chain in the aralkyl group) is preferably 1-4, more preferably 1-2, and particularly preferably 1.

R101 之含有芳香環之烴基中,該芳香環所可具有的取代基,可列舉如:烷基、烷氧基、鹵素原子、鹵化烷基、羥基、羰基、硝基等。 作為取代基之烷基,以碳數1~5之烷基或碳數3~6之環烷基為佳,以甲基、乙基、丙基、n-丁基、tert-丁基、環戊基、環己基為較佳。 作為取代基之烷氧基,以碳數數1~5之烷氧基為佳,以甲氧基、乙氧基、n-丙氧基、iso-丙氧基、n-丁氧基、tert-丁氧基為較佳,以甲氧基、乙氧基為最佳。 作為取代基之鹵素原子,可列舉如:氟原子、氯原子、溴原子、碘原子等,又以氟原子為佳。 作為取代基之鹵化烷基,為碳數1~5之烷基,例如:甲基、乙基、丙基、n-丁基、tert-丁基等的氫原子之一部份或全部被前述鹵素原子取代而得之基等。 作為取代基之羰基,為取代構成環狀烴基的伸甲基 (-CH2 -)之基。 其中,於R101 之含有芳香環之烴基中,該芳香環所可具有的取代基,又以tert-丁基、羥基或環己基為佳。In the aromatic ring-containing hydrocarbon group of R 101 , the substituent that the aromatic ring may have includes, for example, an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, a carbonyl group, and a nitro group. The alkyl group as a substituent is preferably an alkyl group with 1 to 5 carbons or a cycloalkyl group with 3 to 6 carbons, methyl, ethyl, propyl, n-butyl, tert-butyl, cycloalkyl Pentyl and cyclohexyl are preferred. The alkoxy group as a substituent is preferably an alkoxy group with 1 to 5 carbon atoms, such as methoxy, ethoxy, n-propoxy, iso-propoxy, n-butoxy, tert -Butoxy is preferred, and methoxy and ethoxy are most preferred. The halogen atom as a substituent includes, for example, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, etc., and a fluorine atom is preferred. The halogenated alkyl group as a substituent is an alkyl group with 1 to 5 carbon atoms, such as methyl, ethyl, propyl, n-butyl, tert-butyl, etc., where part or all of the hydrogen atoms are replaced by the aforementioned A group obtained by substituting a halogen atom, etc. The carbonyl group as a substituent is a group substituting a methylene group (-CH 2 -) constituting a cyclic hydrocarbon group. Among them, in the hydrocarbon group containing an aromatic ring in R101 , the substituent that the aromatic ring may have is preferably tert-butyl, hydroxyl or cyclohexyl.

式(b-1)中,Y101 為單鍵或含有氧原子的2價之連結基。 Y101 為含有氧原子的2價之連結基時,該Y101 亦可含有氧原子以外的原子。氧原子以外的原子,例如:碳原子、氫原子、硫原子、氮原子等。 含有氧原子的2價之連結基,可列舉如:氧原子(醚鍵結:-O-)、酯鍵結(-C(=O)-O-)、氧羰基(-O-C(=O)-)、醯胺鍵結(-C(=O)-NH-)、羰基(-C(=O)-)、碳酸酯鍵結 (-O-C(=O)-O-)等的非烴系之含有氧原子的連結基;該非烴系之含有氧原子的連結基與伸烷基之組合等。該組合中,可再連結磺醯基(-SO2 -)。該含有氧原子的2價之連結基,例如:下述通式(y-al-1)~(y-al-9)各別表示之連結基等。In formula (b-1), Y 101 is a single bond or a divalent linking group containing an oxygen atom. When Y 101 is a divalent linking group containing an oxygen atom, this Y 101 may contain atoms other than an oxygen atom. Atoms other than oxygen atoms, such as carbon atoms, hydrogen atoms, sulfur atoms, nitrogen atoms, etc. Divalent linking groups containing oxygen atoms, such as: oxygen atom (ether bond: -O-), ester bond (-C(=O)-O-), oxycarbonyl (-OC(=O) -), amide bond (-C(=O)-NH-), carbonyl (-C(=O)-), carbonate bond (-OC(=O)-O-) and other non-hydrocarbon systems A linking group containing an oxygen atom; a combination of the non-hydrocarbon-based linking group containing an oxygen atom and an alkylene group, etc. In this combination, a sulfonyl group (-SO 2 -) may be further bonded. The divalent linking group containing an oxygen atom is, for example, linking groups represented by the following general formulas (y-al-1) to (y-al-9), respectively.

Figure 02_image101
[式中,V’101 為單鍵或碳數1~5之伸烷基,V’102 為碳數1~30的2價之飽和烴基]。
Figure 02_image101
[wherein, V'101 is a single bond or an alkylene group with 1 to 5 carbons, and V'102 is a divalent saturated hydrocarbon group with 1 to 30 carbons].

V’102 中的2價之飽和烴基,以碳數1~30之伸烷基為佳,以碳數1~10之伸烷基為較佳,以碳數1~5之伸烷基為更佳。The divalent saturated hydrocarbon group in V'102 is preferably an alkylene group with 1 to 30 carbons, more preferably an alkylene group with 1 to 10 carbons, and more preferably an alkylene group with 1 to 5 carbons. good.

V’101 及V’102 中之伸烷基,可為直鏈狀之伸烷基亦可、支鏈狀之伸烷基亦可,又以直鏈狀之伸烷基為佳。 V’101 及V’102 中之伸烷基,具體而言,可列舉如:伸甲基[-CH2 -];-CH(CH3 )-、-CH(CH2 CH3 )-、-C(CH3 )2 -、 -C(CH3 )(CH2 CH3 )-、-C(CH3 )(CH2 CH2 CH3 )-、-C(CH2 CH3 )2 - 等之烷基伸甲基;伸乙基[-CH2 CH2 -];-CH(CH3 )CH2 -、 -CH(CH3 )CH(CH3 )-、-C(CH3 )2 CH2 -、-CH(CH2 CH3 )CH2 -等之烷基伸乙基;伸三甲基(n-伸丙基)[-CH2 CH2 CH2 -];-CH(CH3 )CH2 CH2 -、-CH2 CH(CH3 )CH2 -等之烷基伸三甲基;伸四甲基[-CH2 CH2 CH2 CH2 -];-CH(CH3 )CH2 CH2 CH2 -、 -CH2 CH(CH3 )CH2 CH2 -等之烷基伸四甲基;伸五甲基 [-CH2 CH2 CH2 CH2 CH2 -]等。 又,V’101 或V’102 中,前述伸烷基中的一部份之伸甲基,可被碳數5~10的2價之脂肪族環式基所取代。該脂肪族環式基,以由前述式(b-1)中之R101 中的環狀之脂肪族烴基(單環式之脂環式烴基、多環式之脂環式烴基)再去除1個氫原子而得之2價之基為佳,以伸環己基、1,5-伸金剛烷基或2,6-伸金剛烷基為較佳。The alkylene groups in V'101 and V'102 may be linear or branched, and preferably linear. The alkylene groups in V' 101 and V' 102 specifically include: methylene [-CH 2 -]; -CH(CH 3 )-, -CH(CH 2 CH 3 )-, - C(CH 3 ) 2 -, -C(CH 3 )(CH 2 CH 3 )-, -C(CH 3 )(CH 2 CH 2 CH 3 )-, -C(CH 2 CH 3 ) 2 - etc. Alkylmethylene; Ethyl[-CH 2 CH 2 -]; -CH(CH 3 )CH 2 -, -CH(CH 3 )CH(CH 3 )-, -C(CH 3 ) 2 CH 2 - , -CH(CH 2 CH 3 )CH 2 - and other alkyl ethylidene groups; trimethyl(n-propylidene)[-CH 2 CH 2 CH 2 -]; -CH(CH 3 )CH 2 CH 2 -, -CH 2 CH(CH 3 )CH 2 - and other alkyltrimethylene; Tetramethyl[-CH 2 CH 2 CH 2 CH 2 -]; -CH(CH 3 )CH 2 CH 2 CH 2 -, -CH 2 CH(CH 3 )CH 2 CH 2 -, etc., alkyl tetramethylene; pentamethyl[-CH 2 CH 2 CH 2 CH 2 CH 2 -], etc. Also, in V'101 or V'102 , some of the methylene groups in the aforementioned alkylene group may be substituted by a divalent aliphatic ring group having 5 to 10 carbon atoms. The aliphatic cyclic group is obtained by removing 1 from the cyclic aliphatic hydrocarbon group (monocyclic alicyclic hydrocarbon group, polycyclic alicyclic hydrocarbon group) in R 101 in the aforementioned formula (b-1). A divalent group derived from one hydrogen atom is preferred, and cyclohexylene, 1,5-adamantyl or 2,6-adamantyl is more preferred.

Y101 以含有酯鍵結的2價之連結基,或含有醚鍵結的2價之連結基為佳,以上述式(y-al-1)~(y-al-5)各別表示之連結基為較佳。Y 101 is preferably a divalent linking group containing an ester bond, or a divalent linking group containing an ether bond, represented by the above formulas (y-al-1) to (y-al-5) respectively A linker is preferred.

式(b-1)中,V101 為單鍵、伸烷基或氟化伸烷基。V101 中之伸烷基、氟化伸烷基,以碳數1~4為佳。V101 中之氟化伸烷基為,V101 中之伸烷基的氫原子之一部份或全部被氟原子取代而得之基等。其中,V101 又以單鍵,或碳數1~4之氟化伸烷基為佳。In the formula (b-1), V 101 is a single bond, an alkylene group or a fluorinated alkylene group. The alkylene group and fluorinated alkylene group in V 101 preferably have 1-4 carbon atoms. The fluorinated alkylene group in V101 is a group obtained by substituting part or all of the hydrogen atoms of the alkylene group in V101 with fluorine atoms, etc. Among them, V 101 is preferably a single bond, or a fluorinated alkylene group having 1 to 4 carbon atoms.

式(b-1)中,R102 為氟原子或碳數1~5之氟化烷基。R102 以氟原子或碳數1~5之全氟烷基為佳,以氟原子為較佳。In formula (b-1), R 102 is a fluorine atom or a fluorinated alkyl group having 1 to 5 carbons. R 102 is preferably a fluorine atom or a perfluoroalkyl group having 1 to 5 carbons, more preferably a fluorine atom.

・(b-2)成份之陰離子部 式(b-2)中,R104 ~R105 為各別獨立之可具有取代基之環式基、可具有取代基之鏈狀烷基,或可具有取代基之鏈狀烯基。但,R104 、R105 可相互鍵結而形成環。・In the anion moiety formula (b-2) of the component (b-2), R 104 to R 105 are independently cyclic groups that may have substituents, chain alkyl groups that may have substituents, or may have Chain alkenyl substituent. However, R 104 and R 105 may be bonded to each other to form a ring.

可具有取代基之環式基: 該環式基,以環狀之烴基為佳,該環狀之烴基,可為芳香族烴基亦可、脂肪族烴基亦可。脂肪族烴基係指,不具有芳香族性之烴基之意。又,脂肪族烴基,可為飽和者亦可、不飽和者亦可,通常以飽和者為佳。Cyclic groups that may have substituents: The cyclic group is preferably a cyclic hydrocarbon group, and the cyclic hydrocarbon group may be an aromatic hydrocarbon group or an aliphatic hydrocarbon group. The aliphatic hydrocarbon group means a hydrocarbon group not having aromaticity. In addition, the aliphatic hydrocarbon group may be saturated or unsaturated, but usually saturated is preferred.

R104 ~R105 中之芳香族烴基,為具有芳香環之烴基。 該芳香族烴基之碳數以3~30為佳,以碳數5~30為較佳,以碳數5~20為更佳,以碳數6~15為特佳,以碳數6~10為最佳。但,該碳數中,為不包含取代基中之碳數者。 R104 ~R105 中之芳香族烴基所具有的芳香環,具體而言,可列舉如:苯、茀、萘、蒽、菲、聯苯,或構成該些芳香環的碳原子之一部份被雜原子取代而得之芳香族雜環等。芳香族雜環中之雜原子,可列舉如:氧原子、硫原子、氮原子等。 R104 ~R105 中之芳香族烴基,具體而言,可列舉如:由前述芳香環去除1個氫原子而得之基(芳基:例如苯基、萘基等)、前述芳香環的氫原子中之1個被伸烷基取代而得之基(例如苄基、苯乙基、1-萘基甲基、2-萘基甲基、1-萘基乙基、2-萘基乙基等之芳烷基等)等。前述伸烷基(芳烷基中之烷鏈)之碳數,以1~4為佳,以碳數1~2為較佳,以碳數1為特佳。The aromatic hydrocarbon groups in R 104 to R 105 are hydrocarbon groups having an aromatic ring. The aromatic hydrocarbon group preferably has 3 to 30 carbons, more preferably 5 to 30 carbons, more preferably 5 to 20 carbons, particularly preferably 6 to 15 carbons, and 6 to 10 carbons. for the best. However, the carbon number does not include the carbon number in the substituent. The aromatic rings possessed by the aromatic hydrocarbon groups in R 104 to R 105 specifically include: benzene, fennel, naphthalene, anthracene, phenanthrene, biphenyl, or some of the carbon atoms constituting these aromatic rings Aromatic heterocycles substituted by heteroatoms, etc. The hetero atom in the aromatic heterocycle includes, for example, an oxygen atom, a sulfur atom, a nitrogen atom, and the like. The aromatic hydrocarbon groups in R 104 to R 105 specifically include groups obtained by removing one hydrogen atom from the aforementioned aromatic rings (aryl groups: such as phenyl, naphthyl, etc.), hydrogen atoms of the aforementioned aromatic rings, A group in which one of the atoms is substituted by an alkylene group (such as benzyl, phenethyl, 1-naphthylmethyl, 2-naphthylmethyl, 1-naphthylethyl, 2-naphthylethyl etc. aralkyl, etc.) etc. The carbon number of the aforementioned alkylene group (alkane chain in the aralkyl group) is preferably 1-4, more preferably 1-2, and particularly preferably 1.

R104 ~R105 中之環狀之脂肪族烴基,可列舉如:結構中含有環之脂肪族烴基等。 該結構中含有環之脂肪族烴基,可列舉如:脂環式烴基(由脂肪族烴環去除1個氫原子而得之基)、脂環式烴基鍵結於直鏈狀或支鏈狀之脂肪族烴基的末端而得之基、脂環式烴基介於直鏈狀或支鏈狀之脂肪族烴基中間而得之基等。 前述脂環式烴基,以碳數3~20為佳,以3~12為較佳。 前述脂環式烴基,可為多環式基亦可、單環式基亦可。單環式之脂環式烴基,以由單環鏈烷去除1個以上的氫原子而得之基為佳。該單環鏈烷,以碳數3~6者為佳,具體而言,可列舉如:環戊烷、環己烷等。多環式之脂環式烴基,以由多環鏈烷去除1個以上的氫原子而得之基為佳,該多環鏈烷,以碳數7~30者為佳。其中,該多環鏈烷又以:金剛烷、降莰烷、異莰烷、三環癸烷、四環十二烷等的具有交聯環系之多環式骨架的多環鏈烷;具有膽固醇骨架之環式基等縮合環系之具有多環式骨架的多環鏈烷為較佳。The cyclic aliphatic hydrocarbon groups in R 104 to R 105 include, for example, aliphatic hydrocarbon groups containing rings in their structures. The aliphatic hydrocarbon group containing a ring in the structure includes, for example: an alicyclic hydrocarbon group (a group obtained by removing one hydrogen atom from an aliphatic hydrocarbon ring), an alicyclic hydrocarbon group bonded to a straight chain or a branched chain A group obtained at the end of an aliphatic hydrocarbon group, a group obtained by interposing an alicyclic hydrocarbon group in the middle of a linear or branched aliphatic hydrocarbon group, etc. The aforementioned alicyclic hydrocarbon group preferably has 3-20 carbon atoms, more preferably 3-12 carbon atoms. The aforementioned alicyclic hydrocarbon group may be a polycyclic group or a monocyclic group. The monocyclic alicyclic hydrocarbon group is preferably a group obtained by removing one or more hydrogen atoms from a monocyclic alkane. The monocyclic alkanes preferably have 3 to 6 carbon atoms, and specific examples include cyclopentane and cyclohexane. The polycyclic alicyclic hydrocarbon group is preferably a group obtained by removing one or more hydrogen atoms from a polycyclic alkane, and the polycyclic alkane preferably has 7 to 30 carbon atoms. Among them, the polycyclic alkanes are: adamantane, norbornane, isobornane, tricyclodecane, tetracyclododecane, etc., which have polycyclic skeletons with cross-linked ring systems; A polycyclic alkane having a polycyclic skeleton of a condensed ring system such as a cyclic group of a cholesterol skeleton is preferable.

其中,R104 ~R105 中之環狀之脂肪族烴基,又以由單環鏈烷或多環鏈烷去除1個以上的氫原子而得之基為佳,以由多環鏈烷去除1個氫原子而得之基為較佳,以金剛烷基、降莰基為特佳,以金剛烷基為最佳。Among them, the cyclic aliphatic hydrocarbon group in R 104 ~ R 105 is preferably a group obtained by removing one or more hydrogen atoms from a monocyclic alkane or a polycyclic alkane, and a group obtained by removing 1 hydrogen atom from a polycyclic alkane A group derived from hydrogen atoms is preferred, adamantyl and norbornyl are particularly preferred, and adamantyl is most preferred.

可鍵結於脂環式烴基的直鏈狀或支鏈狀之脂肪族烴基,以碳數為1~10為佳,以碳數1~6為較佳,以碳數1~4為更佳,以碳數1~3為特佳。 直鏈狀之脂肪族烴基,以直鏈狀之伸烷基為佳,具體而言,可列舉如:伸甲基[-CH2 -]、伸乙基[-(CH2 )2 -]、伸三甲基[-(CH2 )3 -]、伸四甲基[-(CH2 )4 -]、伸五甲基[-(CH2 )5 -] 等。 支鏈狀之脂肪族烴基,以支鏈狀之伸烷基為佳,具體而言,可列舉如:-CH(CH3 )-、-CH(CH2 CH3 )-、-C(CH3 )2 -、 -C(CH3 )(CH2 CH3 )-、-C(CH3 )(CH2 CH2 CH3 )-、-C(CH2 CH3 )2 -等之烷基伸甲基;-CH(CH3 )CH2 -、-CH(CH3 )CH(CH3 )-、-C(CH3 )2 CH2 -、 -CH(CH2 CH3 )CH2 -、-C(CH2 CH3 )2 -CH2 -等之烷基伸乙基;-CH(CH3 )CH2 CH2 -、-CH2 CH(CH3 )CH2 -等之烷基伸三甲基;-CH(CH3 )CH2 CH2 CH2 -、-CH2 CH(CH3 )CH2 CH2 -等之烷基伸四甲基等之烷基伸烷基等。烷基伸烷基中之烷基,以碳數1~5之直鏈狀之烷基為佳。A linear or branched aliphatic hydrocarbon group that can be bonded to an alicyclic hydrocarbon group, preferably with 1 to 10 carbons, more preferably 1 to 6 carbons, more preferably 1 to 4 carbons , with carbon numbers of 1 to 3 being particularly preferred. Straight-chain aliphatic hydrocarbon groups are preferably straight-chain alkylene groups. Specifically, examples include: methylene [-CH 2 -], ethylene [-(CH 2 ) 2 -], Trimethyl[-(CH 2 ) 3 -], Tetramethyl[-(CH 2 ) 4 -], Pentamethyl[-(CH 2 ) 5 -], etc. Branched-chain aliphatic hydrocarbon groups are preferably branched-chain alkylene groups. Specifically, examples include: -CH(CH 3 )-, -CH(CH 2 CH 3 )-, -C(CH 3 ) 2 -, -C(CH 3 )(CH 2 CH 3 )-, -C(CH 3 )(CH 2 CH 2 CH 3 )-, -C(CH 2 CH 3 ) 2 -, etc. ; -CH(CH 3 )CH 2 -, -CH(CH 3 )CH(CH 3 )-, -C(CH 3 ) 2 CH 2 -, -CH(CH 2 CH 3 )CH 2 -, -C( CH 2 CH 3 ) 2 -CH 2 - and other alkyl ethylene groups; -CH(CH 3 ) CH 2 CH 2 -, -CH 2 CH(CH 3 ) CH 2 - and other alkyl trimethyl groups; -CH (CH 3 )CH 2 CH 2 CH 2 -, -CH 2 CH(CH 3 )CH 2 CH 2 -, alkylene such as tetramethyl, alkylene such as tetramethyl, etc. The alkyl group in the alkylene group is preferably a linear alkyl group having 1 to 5 carbon atoms.

又,R104 ~R105 中之環狀之烴基,可含有雜環等的雜原子。具體而言,可列舉如:前述通式(a2-r-1)~(a2-r-7)各別表示之含內酯之環式基、前述通式(a5-r-1)~(a5-r-4)各別表示之含-SO2 -之環式基、其他下述化學式(r-hr-1)~(r-hr-16)各別表示之雜環式基等。Also, the cyclic hydrocarbon groups in R 104 to R 105 may contain heteroatoms such as heterocycles. Specifically, for example: the lactone-containing cyclic group respectively represented by the aforementioned general formulas (a2-r-1) to (a2-r-7), the aforementioned general formulas (a5-r-1) to ( a5-r-4) -SO 2 --containing cyclic groups represented separately, other heterocyclic groups represented by the following chemical formulas (r-hr-1) to (r-hr-16), etc.

Figure 02_image103
Figure 02_image103

R104 ~R105 的環式基中之取代基,可列舉如:烷基、烷氧基、鹵素原子、鹵化烷基、羥基、羰基、硝基等。 作為取代基之烷基,以碳數1~5之烷基為佳,以甲基、乙基、丙基、n-丁基、tert-丁基為最佳。 作為取代基之烷氧基,以碳數數1~5之烷氧基為佳,以甲氧基、乙氧基、n-丙氧基、iso-丙氧基、n-丁氧基、tert-丁氧基為較佳,以甲氧基、乙氧基為最佳。 作為取代基之鹵素原子,可列舉如:氟原子、氯原子、溴原子、碘原子等,又以氟原子為佳。 作為取代基之鹵化烷基,為碳數1~5之烷基,例如甲基、乙基、丙基、n-丁基、tert-丁基等的氫原子之一部份或全部被前述鹵素原子取代而得之基等。 作為取代基之羰基,為取代構成環狀烴基的伸甲基 (-CH2 -)之基。Substituents in the cyclic groups of R 104 to R 105 include, for example, alkyl groups, alkoxy groups, halogen atoms, halogenated alkyl groups, hydroxyl groups, carbonyl groups, and nitro groups. The alkyl group as the substituent is preferably an alkyl group having 1 to 5 carbon atoms, most preferably a methyl group, ethyl group, propyl group, n-butyl group, or tert-butyl group. The alkoxy group as a substituent is preferably an alkoxy group with 1 to 5 carbon atoms, such as methoxy, ethoxy, n-propoxy, iso-propoxy, n-butoxy, tert -Butoxy is preferred, and methoxy and ethoxy are most preferred. The halogen atom as a substituent includes, for example, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, etc., and a fluorine atom is preferred. The halogenated alkyl group as a substituent is an alkyl group with 1 to 5 carbon atoms, such as methyl, ethyl, propyl, n-butyl, tert-butyl, etc., part or all of the hydrogen atoms of the aforementioned halogen Substitution of atoms, etc. The carbonyl group as a substituent is a group substituting a methylene group (-CH 2 -) constituting a cyclic hydrocarbon group.

可具有取代基之鏈狀烷基: R104 ~R105 之鏈狀烷基,可為直鏈狀或支鏈狀之任一者。 直鏈狀之烷基,以碳數1~20為佳,以碳數1~15為較佳,以碳數1~10為最佳。具體而言,可列舉如:甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、壬基、癸基、十一烷基、十二烷基、十三烷基、異十三烷基、十四烷基、十五烷基、十六烷基、異十六烷基、十七烷基、十八烷基、十九烷基、二十烷基、二十一烷基、二十二烷基等。 支鏈狀之烷基,以碳數3~20為佳,以碳數3~15為較佳,以碳數3~10為最佳。具體而言,可列舉如:1-甲基乙基、1-甲基丙基、2-甲基丙基、1-甲基丁基、2-甲基丁基、3-甲基丁基、1-乙基丁基、2-乙基丁基、1-甲基戊基、2-甲基戊基、3-甲基戊基、4-甲基戊基等。Chained alkyl groups which may have substituents: The chained alkyl groups of R 104 to R 105 may be linear or branched. The linear alkyl group preferably has 1 to 20 carbons, more preferably 1 to 15 carbons, most preferably 1 to 10 carbons. Specifically, examples include: methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl, tridecyl base, isotridecyl, tetradecyl, pentadecyl, hexadecyl, isohexadecyl, heptadecyl, octadecyl, nonadecyl, eicosyl, two Undecyl, behenyl, etc. The branched alkyl group preferably has 3-20 carbons, more preferably 3-15 carbons, most preferably 3-10 carbons. Specifically, examples include: 1-methylethyl, 1-methylpropyl, 2-methylpropyl, 1-methylbutyl, 2-methylbutyl, 3-methylbutyl, 1-ethylbutyl, 2-ethylbutyl, 1-methylpentyl, 2-methylpentyl, 3-methylpentyl, 4-methylpentyl, etc.

可具有取代基之鏈狀烯基: R104 ~R105 之鏈狀烯基,可為直鏈狀或支鏈狀之任一者皆可,又以碳數2~10為佳,以碳數2~5為較佳,以碳數2~4為更佳,以碳數3為特佳。直鏈狀之烯基,例如:乙烯基、丙烯基(烯丙基)、丁炔基等。支鏈狀之烯基,可列舉如:1-甲基乙烯基、2-甲基乙烯基、1-甲基丙烯基、2-甲基丙烯基等。 鏈狀之烯基,於上述之中,又以直鏈狀之烯基為佳,以乙烯基、丙烯基為較佳,以乙烯基為特佳。Chain alkenyl groups that may have substituents: Chain alkenyl groups of R 104 to R 105 can be either linear or branched, preferably with 2 to 10 carbons, and the number of carbons is 2-5 is preferable, 2-4 carbon number is more preferable, and 3 carbon number is especially preferable. Straight-chain alkenyl, such as vinyl, propenyl (allyl), butynyl, etc. Examples of branched alkenyl include 1-methylvinyl, 2-methylvinyl, 1-methylacryl, 2-methacryl, and the like. Among the above chain alkenyl groups, straight chain alkenyl groups are preferred, vinyl and propenyl groups are preferred, and vinyl groups are particularly preferred.

R104 ~R105 之鏈狀烷基或烯基中的取代基,可列舉如:烷氧基、鹵素原子、鹵化烷基、羥基、羰基、硝基、胺基、上述R104 ~R105 中之環式基等。The substituents in the chain alkyl or alkenyl groups of R 104 to R 105 include, for example, alkoxy groups, halogen atoms, halogenated alkyl groups, hydroxyl groups, carbonyl groups, nitro groups, amino groups, and the above-mentioned R 104 to R 105 The ring group and so on.

其中,R104 、R105 又以可具有取代基之鏈狀烷基為佳,以直鏈狀或支鏈狀之烷基,或直鏈狀或支鏈狀之氟化烷基為較佳。 該鏈狀之烷基之碳數,以1~10為佳,更佳為碳數1~7,特佳為碳數1~3。R104 、R105 之鏈狀烷基之碳數,於上述碳數之範圍內時,基於對阻劑用溶劑亦具有良好溶解性等的理由,以越小越佳。又,R104 、R105 之鏈狀烷基中,被氟原子取代的氫原子數越多時,其酸之強度越強,而為更佳。前述鏈狀烷基中的氟原子之比例,即氟化率,較佳為70~100%,更佳為90~100%,最佳為全部的氫原子被氟原子取代之全氟烷基。 式(b-2)中,V102 、V103 各別獨立為單鍵、伸烷基,或氟化伸烷基,其分別與式(b-1)中之V101 為相同之內容等。 式(b-2)中,L101 、L102 各別獨立為單鍵或氧原子。Among them, R 104 and R 105 are preferably chained alkyl groups which may have substituents, and preferably linear or branched chain alkyl groups, or linear or branched chain fluorinated alkyl groups. The chain alkyl group preferably has 1-10 carbon atoms, more preferably 1-7 carbon atoms, and particularly preferably 1-3 carbon atoms. When the carbon numbers of the chained alkyl groups of R 104 and R 105 are within the range of the above-mentioned carbon numbers, the smaller the better, for reasons such as good solubility in solvents for resists, etc. In addition, in chain alkyl groups of R 104 and R 105 , the more hydrogen atoms substituted by fluorine atoms, the stronger the strength of the acid, which is more preferable. The ratio of fluorine atoms in the chain alkyl group, that is, the fluorination rate, is preferably 70-100%, more preferably 90-100%, most preferably a perfluoroalkyl group in which all hydrogen atoms are replaced by fluorine atoms. In formula (b-2), V 102 and V 103 are each independently a single bond, an alkylene group, or a fluorinated alkylene group, which are the same as V 101 in formula (b-1). In formula (b-2), L 101 and L 102 are each independently a single bond or an oxygen atom.

・(b-3)成份之陰離子部 式(b-3)中,R106 ~R108 各自獨立為可具有取代基之環式基、可具有取代基之鏈狀烷基,或可具有取代基之鏈狀烯基,其分別與式(b-1)中之R101 為相同之內容等。 L103 ~L105 各別獨立為單鍵、-CO-或-SO2 -。・In the anion moiety formula (b-3) of component (b-3), R 106 to R 108 are each independently a cyclic group that may have a substituent, a chain alkyl group that may have a substituent, or an optional substituent The chain alkenyl group has the same content as R 101 in formula (b-1). L 103 to L 105 are each independently a single bond, -CO- or -SO 2 -.

{陽離子部} 式(b-1)、(b-2)及(b-3)中,m為1以上之整數,且M’m+ 為m價之鎓陽離子,又以鋶陽離子、錪陽離子為較佳之例示,以下述通式(ca-1)~(ca-5)各別表示之有機陽離子為特佳。{Cation part} In the formulas (b-1), (b-2) and (b-3), m is an integer of 1 or more, and M' m+ is an onium cation with a valence of m, and the cations of perdolium and iodonium are used as As preferred examples, organic cations represented by the following general formulas (ca-1) to (ca-5) are particularly preferred.

Figure 02_image105
[式中,R201 ~R207 ,及R211 ~R212 各別獨立表示可具有取代基之芳基、烷基或烯基;R201 ~R203 、R206 ~R207 、R211 ~R212 可相互鍵結並與式中的硫原子共同形成環;R208 ~R209 各別獨立表示氫原子或碳數1~5之烷基;R210 為可具有取代基之芳基、可具有取代基之烷基、可具有取代基之烯基,或可具有取代基之含-SO2 -之環式基;L201 表示-C(=O)-或-C(=O)-O-;Y201 各自獨立表示伸芳基、伸烷基或伸烯基;x為1或2;W201 表示(x+1)價之連結基]。
Figure 02_image105
[In the formula, R 201 ~ R 207 , and R 211 ~ R 212 each independently represent an aryl group, an alkyl group or an alkenyl group that may have a substituent; R 201 ~ R 203 , R 206 ~ R 207 , R 211 ~ R 212 can be bonded to each other and form a ring together with the sulfur atom in the formula; R 208 ~ R 209 each independently represent a hydrogen atom or an alkyl group with 1 to 5 carbons; R 210 is an aryl group that may have a substituent, may have Alkyl group with substituent, alkenyl group with substituent, or cyclic group containing -SO 2 - with substituent; L 201 represents -C(=O)- or -C(=O)-O- ; Y 201 each independently represents an aryl, an alkyl or an alkenyl; x is 1 or 2; W 201 represents a linking group of (x+1) valence].

R201 ~R207 ,及R211 ~R212 中之芳基,可列舉如:碳數6~20之無取代之芳基等,又以苯基、萘基為佳。 R201 ~R207 ,及R211 ~R212 中之烷基,以鏈狀或環狀之烷基,且為碳數1~30者為佳。 R201 ~R207 ,及R211 ~R212 中之烯基,以碳數2~10為佳。 R201 ~R207 ,及R210 ~R212 可具有的取代基,可列舉如:烷基、鹵素原子、鹵化烷基、羰基、氰基、胺基、芳基、下述式(ca-r-1)~(ca-r-7)所各別表示之基等。Aryl groups in R 201 to R 207 and R 211 to R 212 include, for example, unsubstituted aryl groups having 6 to 20 carbon atoms, and phenyl and naphthyl groups are preferred. The alkyl groups in R 201 to R 207 and R 211 to R 212 are preferably chain or cyclic alkyl groups with 1 to 30 carbon atoms. R 201 to R 207 and the alkenyl group in R 211 to R 212 preferably have 2 to 10 carbon atoms. The substituents that R 201 to R 207 and R 210 to R 212 may have include, for example, alkyl groups, halogen atoms, halogenated alkyl groups, carbonyl groups, cyano groups, amino groups, aryl groups, and the following formula (ca-r -1)~(ca-r-7) respectively represent the basis, etc.

Figure 02_image107
[式中,R’201 各別獨立為氫原子、可具有取代基之環式基、可具有取代基之鏈狀烷基,或可具有取代基之鏈狀烯基]。
Figure 02_image107
[wherein, R'201 are each independently a hydrogen atom, a cyclic group that may have a substituent, a chain alkyl group that may have a substituent, or a chain alkenyl group that may have a substituent].

R’201 之可具有取代基之環式基、可具有取代基之鏈狀烷基,或可具有取代基之鏈狀烯基,除與前述式(b-1)中之R101 為相同之內容等以外,可具有取代基之環式基或可具有取代基之鏈狀烷基,又可例如與上述式(a1-r-2)所表示之酸解離性基為相同之內容。The cyclic group that may have a substituent, the chain-like alkyl group that may have a substituent, or the chain - like alkenyl group that may have a substituent of R'201, except that R in the aforementioned formula (b-1) 101 is the same Other than the contents etc., the cyclic group which may have a substituent or the chain alkyl group which may have a substituent may be the same as the acid dissociative group represented by said formula (a1-r-2), for example.

R201 ~R203 、R206 ~R207 、R211 ~R212 ,於相互鍵結並與式中的硫原子共同形成環時,其可介由硫原子、氧原子、氮原子等的雜原子,或羰基、-SO-、-SO2 -、 -SO3 -、-COO-、-CONH-或-N(RN )-(該RN 為碳數1~5之烷基)等的官能基予以鍵結。所形成之環,以式中的硫原子包含於該環骨架而形成的1個之環,包含硫原子,以3~10員環為佳,以5~7員環為特佳。所形成之環的具體例,例如:噻吩環、噻唑環、苯并噻吩環、噻蒽環、苯并噻吩環、二苯并噻吩環、9H-噻噸環、噻噸酮環、噻蒽環、啡噁噻環、四氫噻吩鎓環、四氫硫代吡喃鎓環等。When R 201 ~R 203 , R 206 ~R 207 , R 211 ~R 212 are bonded to each other and form a ring with the sulfur atom in the formula, they can be interposed by heteroatoms such as sulfur atom, oxygen atom, nitrogen atom, etc. , or carbonyl, -SO-, -SO 2 -, -SO 3 -, -COO-, -CONH- or -N(R N )- (the R N is an alkyl group with 1 to 5 carbons) and other functions The base is bonded. The formed ring is a ring formed by including a sulfur atom in the ring skeleton in the formula, preferably a 3- to 10-membered ring, particularly preferably a 5- to 7-membered ring, including a sulfur atom. Specific examples of the formed ring, for example: thiophene ring, thiazole ring, benzothiophene ring, thianthrene ring, benzothiophene ring, dibenzothiophene ring, 9H-thioxanthene ring, thioxanthone ring, thianthrene ring , phenanthiazine ring, tetrahydrothiophenium ring, tetrahydrothiopyrylium ring, etc.

R208 ~R209 各別獨立表示氫原子或碳數1~5之烷基,又以氫原子或碳數1~3之烷基為佳,為烷基時,其亦可相互鍵結而形成環。R 208 ~ R 209 each independently represent a hydrogen atom or an alkyl group with 1 to 5 carbons, preferably a hydrogen atom or an alkyl group with 1 to 3 carbons. When they are alkyl groups, they can also be bonded to each other to form ring.

R210 為可具有取代基之芳基、可具有取代基之烷基、可具有取代基之烯基,或可具有取代基之含 -SO2 -之環式基。 R210 中之芳基,可列舉如:碳數6~20之無取代之芳基等,又以苯基、萘基為佳。 R210 中之烷基,以鏈狀或環狀之烷基,且為碳數1~30者為佳。 R210 中之烯基,以碳數2~10為佳。 R210 中之可具有取代基之含-SO2 -之環式基,可列舉如:與前述通式(a5-r-1)~(a5-r-4)各別表示之含-SO2 -之環式基為相同之內容等,該些之中,又以「含-SO2 -之多環式基」為佳,以通式(a5-r-1)所表示之基為較佳。R 210 is an aryl group which may have a substituent, an alkyl group which may have a substituent, an alkenyl group which may have a substituent, or a cyclic group containing -SO 2 - which may have a substituent. The aryl group in R210 includes, for example, unsubstituted aryl groups having 6 to 20 carbon atoms, and phenyl and naphthyl groups are preferred. The alkyl group in R210 is preferably a chain or cyclic alkyl group with 1 to 30 carbon atoms. The alkenyl group in R 210 preferably has 2-10 carbon atoms. The -SO 2 --containing cyclic group that may have substituents in R 210 includes, for example, the -SO 2 -containing groups represented by the aforementioned general formulas (a5-r-1) to (a5-r-4) respectively. The content of the cyclic group of - is the same, among them, the "polycyclic group containing -SO 2 -" is preferable, and the group represented by the general formula (a5-r-1) is more preferable .

前述式(ca-4)、式(ca-5)中,Y201 各別獨立表示伸芳基、伸烷基或伸烯基。 Y201 中之伸芳基,可列舉如:由前述式(b-1)中之R101 中的芳香族烴基所例示的芳基去除1個氫原子而得之基等。 Y201 中之伸烷基、伸烯基,可列舉如:由前述式(b-1)中之R101 的鏈狀烷基、鏈狀烯基所例示之基去除1個氫原子而得之基等。In the aforementioned formula (ca-4) and formula (ca-5), Y 201 each independently represents an aryl, an alkylene or an alkenylene. The arylylene group in Y201 includes, for example, a group obtained by removing one hydrogen atom from the aryl group exemplified by the aromatic hydrocarbon group in R101 in the above formula (b-1). The alkylene group and alkenylene group in Y201 include, for example, those obtained by removing one hydrogen atom from the group exemplified by the chain alkyl group and chain alkenyl group of R101 in the aforementioned formula (b-1). Base etc.

前述式(ca-4)、式(ca-5)中,x為1或2。 W201 為(x+1)價,即2價或3價之連結基。 W201 中的2價之連結基,以可具有取代基的2價之烴基為佳,可列舉如:與上述通式(a2-1)中之Ya21 為相同的可具有取代基的2價之烴基。W201 中的2價之連結基,可為直鏈狀、支鏈狀、環狀之任一者皆可,又以環狀為佳。其中,又以伸芳基的兩端組合2個的羰基而得之基為佳。伸芳基,可列舉如:伸苯基、伸萘基等,又以伸苯基為特佳。 W201 中的3價之連結基,可列舉如:由前述W201 中的2價之連結基去除1個氫原子而得之基、前述2價之連結基再鍵結前述2價之連結基而得之基等。W201 中的3價之連結基,以伸芳基鍵結2個的羰基而得之基為佳。In the aforementioned formula (ca-4) and formula (ca-5), x is 1 or 2. W 201 is (x+1) valence, that is, a divalent or trivalent linking group. The divalent linking group in W 201 is preferably a divalent hydrocarbon group that may have a substituent, for example: the same divalent hydrocarbon group that may have a substituent as Ya 21 in the above general formula (a2-1) The hydrocarbon group. The divalent linking group in W 201 may be linear, branched, or cyclic, and cyclic is preferred. Among them, a group obtained by combining two carbonyl groups at both ends of the aryl group is preferable. The arylylene group includes, for example, a phenylene group, a naphthylene group, etc., and a phenylene group is particularly preferred. The trivalent linking group in W 201 includes, for example, the group obtained by removing one hydrogen atom from the divalent linking group in W 201 above, and the aforementioned divalent linking group bonded to the aforementioned divalent linking group. And get the foundation and so on. The trivalent linking group in W 201 is preferably a group in which an aryl group is bonded to two carbonyl groups.

前述式(ca-1)所表示的較佳之陽離子,具體而言,可列舉如:下述式(ca-1-1)~(ca-1-72)各別表示之陽離子等。Preferable cations represented by the aforementioned formula (ca-1) specifically include cations represented by the following formulas (ca-1-1) to (ca-1-72), respectively.

Figure 02_image109
Figure 02_image109

Figure 02_image111
Figure 02_image111

Figure 02_image113
[式中,g1、g2、g3表示重複之數目,g1為1~5之整數,g2為0~20之整數,g3為0~20之整數]。
Figure 02_image113
[wherein, g1, g2, and g3 represent the number of repetitions, g1 is an integer of 1 to 5, g2 is an integer of 0 to 20, and g3 is an integer of 0 to 20].

Figure 02_image115
[式中,R”201 為氫原子或取代基,又,該取代基與前述R201 ~R207 ,及R210 ~R212 中被列舉作為可具有的取代基之基團為相同之內容]。
Figure 02_image115
[wherein, R" 201 is a hydrogen atom or a substituent, and the substituent is the same as the substituents listed as optional substituents in R 201 to R 207 and R 210 to R 212 above] .

前述式(ca-2)所表示的較佳之陽離子,具體而言,可列舉如:二苯基錪陽離子、雙(4-tert-丁基苯基)錪陽離子等。Preferable cations represented by the aforementioned formula (ca-2) specifically include diphenyliodonium cations, bis(4-tert-butylphenyl)iodonium cations, and the like.

前述式(ca-3)所表示的較佳之陽離子,具體而言,可列舉如:下述式(ca-3-1)~(ca-3-6)各別表示之陽離子等。Preferable cations represented by the aforementioned formula (ca-3) specifically include cations represented by the following formulas (ca-3-1) to (ca-3-6), respectively.

Figure 02_image117
Figure 02_image117

前述式(ca-4)所表示的較佳之陽離子,具體而言,可列舉如:下述式(ca-4-1)~(ca-4-2)各別表示之陽離子等。Preferable cations represented by the aforementioned formula (ca-4) specifically include cations represented by the following formulas (ca-4-1) to (ca-4-2), respectively.

Figure 02_image119
Figure 02_image119

又,前述式(ca-5)所表示之陽離子,亦可使用下述通式(ca-5-1)~(ca-5-3)各別表示之陽離子。In addition, as the cation represented by the above-mentioned formula (ca-5), cations respectively represented by the following general formulas (ca-5-1) to (ca-5-3) can also be used.

Figure 02_image121
Figure 02_image121

上述之中,陽離子部[(M’m+ )1 m ],又以通式(ca-1)所表示之陽離子為佳,以式(ca-1-1)~(ca-1-72)各別表示之陽離子為較佳。Among the above, the cation part [(M' m+ ) 1 / m ] is preferably the cation represented by the general formula (ca-1), and the formula (ca-1-1)~(ca-1-72) The cations indicated separately are preferred.

本實施形態之阻劑組成物中,(B1)成份以含有前述(b-1)成份為佳;以含有由下述通式(b-1-1)所表示之化合物(以下,亦稱為「(b-1-1)成份」)、下述通式(b-1-2)所表示之化合物(以下,亦稱為「(b-1-2)成份」)、下述通式(b-1-3)所表示之化合物(以下,亦稱為「(b-1-3)成份」)、下述通式(b-1-4)所表示之化合物(以下,亦稱為「(b-1-4)成份」),及下述通式(b-1-5)所表示之化合物(以下,亦稱為「(b-1-5)成份」)所成之群所選出之至少1種為較佳;以含有由(b-1-1)成份、(b-1-4)成份及(b-1-5)成份所成之群所選出之至少1種為更佳。In the resist composition of this embodiment, the (B1) component preferably contains the aforementioned (b-1) component; the compound represented by the following general formula (b-1-1) (hereinafter also referred to as "(b-1-1) component"), a compound represented by the following general formula (b-1-2) (hereinafter also referred to as "(b-1-2) component"), the following general formula ( The compound represented by b-1-3) (hereinafter also referred to as "(b-1-3) component"), the compound represented by the following general formula (b-1-4) (hereinafter also referred to as " (b-1-4) Component"), and a compound represented by the following general formula (b-1-5) (hereinafter also referred to as "(b-1-5) Component"). At least one of them is preferred; it is more preferable to contain at least one selected from the group consisting of (b-1-1), (b-1-4) and (b-1-5) .

Figure 02_image123
[式中,R”101 ~R”104 ,為各別獨立之含有可具有取代基的芳香環之烴基;v”各別獨立為0~3之整數,q”為1~20之整數,t”各別獨立為1~3之整數,n”為0或1]。
Figure 02_image123
[In the formula, R" 101 to R" 104 are independently hydrocarbon groups containing aromatic rings that may have substituents; v" are each independently an integer of 0 to 3, q" is an integer of 1 to 20, and t " are each independently an integer of 1 to 3, and n" is 0 or 1].

Figure 02_image125
[式中,Rx5 ~Rx6 各別獨立表示可具有取代基的烴基或氫原子。
Figure 02_image127
為雙鍵或單鍵。Rz1 ~Rz4 為各別獨立,且於原子價容許時,表示可具有取代基之烴基或氫原子,或2個以上可相互鍵結形成環結構。其中,Rx5 ~Rx6 及Rz1 ~Rz4 中之至少1個具有下述式(b1-r-an1)所表示之陰離子基,且使陰離子部全體為n價的陰離子。n為1以上之整數。 R021 為烷基、烷氧基、鹵素原子、鹵化烷基、羥基、羰基或硝基。 n1為1~3之整數。n11為0~8之整數。 R022 為烷基、烷氧基、鹵素原子、鹵化烷基、羥基、羰基或硝基。 n2為1~3之整數。n21為0~8之整數]。
Figure 02_image125
[wherein, Rx 5 to Rx 6 each independently represent a hydrocarbon group which may have a substituent or a hydrogen atom.
Figure 02_image127
for double or single bonds. Rz 1 to Rz 4 are each independently, and represent a hydrocarbon group or a hydrogen atom which may have a substituent, or two or more of which may be bonded to each other to form a ring structure if the atomic valence permits. Among them, at least one of Rx 5 to Rx 6 and Rz 1 to Rz 4 has an anion group represented by the following formula (b1-r-an1), and the entire anion portion is an n-valent anion. n is an integer of 1 or more. R 021 is an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, a carbonyl group or a nitro group. n1 is an integer of 1-3. n11 is an integer of 0-8. R 022 is an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, a carbonyl group or a nitro group. n2 is an integer of 1-3. n21 is an integer of 0 to 8].

Figure 02_image129
[式中,Rb01 表示碳數1~5之氟化烷基或氟原子。Vb01 表示伸烷基、氟化伸烷基或單鍵。Yb01 表示2價之連結基或單鍵]。
Figure 02_image129
[In the formula, R b01 represents a fluorinated alkyl group or a fluorine atom having 1 to 5 carbon atoms. V b01 represents an alkylene group, a fluorinated alkylene group or a single bond. Y b01 represents a divalent linking group or a single bond].

前述式(b-1-1)~(b-1-4)中,R”101 ~R”104 之含有可具有取代基的芳香環之烴基,以前述R101 、R104 及R106 中之含有可具有取代基的芳香環之烴基所例示之基為佳。前述取代基,與R101 、R104 及R106 中之芳香環可被取代之取代基為相同之內容等。 其中,R”101 又以可具有取代基的苯基或可具有取代基的萘基為佳。 又,R”102 以可具有取代基的苯基為佳。In the aforementioned formulas (b-1-1) to (b-1-4), the hydrocarbon groups containing aromatic rings that may have substituents in R" 101 to R" 104 are represented by the above-mentioned R 101 , R 104 and R 106 The groups exemplified as the hydrocarbon group having an aromatic ring which may have a substituent are preferable. The aforementioned substituents are the same as the substituents that may be substituted for the aromatic rings in R 101 , R 104 and R 106 . Among them, R" 101 is preferably an optionally substituted phenyl group or an optionally substituted naphthyl group. Also, R" 102 is preferably an optionally substituted phenyl group.

前述式(b-1-5)中,Rx5 ~Rx6 各別獨立表示可具有取代基的烴基或氫原子。 Rz1 ~Rz4 為各別獨立,且於原子價容許時,表示可具有取代基之烴基或氫原子,或2個以上可相互鍵結形成環結構。 Rx5 ~Rx6 、Rz1 ~Rz4 中之烴基,可分別為脂肪族烴基亦可、芳香族烴基亦可、環狀之烴基亦可、鏈狀之烴基亦可。 例如,Rx5 ~Rx6 、Rz1 ~Rz4 中,可具有取代基的烴基,可列舉如:可具有取代基的環式基、可具有取代基的鏈狀之烷基,或可具有取代基的鏈狀之烯基等。In the aforementioned formula (b-1-5), Rx 5 to Rx 6 each independently represent a hydrocarbon group or a hydrogen atom which may have a substituent. Rz 1 to Rz 4 are each independently, and represent a hydrocarbon group or a hydrogen atom which may have a substituent, or two or more of which may be bonded to each other to form a ring structure if the atomic valence permits. The hydrocarbon groups in Rx 5 to Rx 6 and Rz 1 to Rz 4 may be aliphatic hydrocarbon groups, aromatic hydrocarbon groups, cyclic hydrocarbon groups, or chain hydrocarbon groups. For example, among Rx 5 to Rx 6 and Rz 1 to Rz 4 , the hydrocarbon group that may have a substituent includes, for example, a cyclic group that may have a substituent, a chain alkyl group that may have a substituent, or an optionally substituted The chain alkenyl of the base, etc.

可具有取代基的環式基: 該環式基,以環狀之烴基為佳,該環狀之烴基,可為芳香族烴基亦可、脂肪族烴基亦可。脂肪族烴基係指,不具有芳香族性之烴基之意。又,脂肪族烴基,可為飽和者亦可、不飽和者亦可,通常以飽和者為佳。又,Rx5 ~Rx6 、Rz1 ~Rz4 中之環狀之烴基,可含有雜環等的雜原子。Cyclic group which may have a substituent: The cyclic group is preferably a cyclic hydrocarbon group, and the cyclic hydrocarbon group may be an aromatic hydrocarbon group or an aliphatic hydrocarbon group. The aliphatic hydrocarbon group means a hydrocarbon group not having aromaticity. In addition, the aliphatic hydrocarbon group may be saturated or unsaturated, but usually saturated is preferred. Also, the cyclic hydrocarbon groups in Rx 5 to Rx 6 and Rz 1 to Rz 4 may contain heteroatoms such as heterocyclic rings.

Rx5 ~Rx6 、Rz1 ~Rz4 中之芳香族烴基,為具有芳香環之烴基。該芳香族烴基之碳數,以3~30為佳,以碳數5~30為較佳,以碳數5~20為更佳,以碳數6~15為特佳,以碳數6~10為最佳。其中,該碳數中,為不包含取代基中之碳數者。 Rx5 ~Rx6 、Rz1 ~Rz4 中之芳香族烴基所具有的芳香環,具體而言,可列舉如:苯、茀、萘、蒽、菲、聯苯,或構成該些芳香環的碳原子之一部份被雜原子取代而得之芳香族雜環等。芳香族雜環中之雜原子,可列舉如:氧原子、硫原子、氮原子等。 Rx5 ~Rx6 、Rz1 ~Rz4 中之芳香族烴基,具體而言,可列舉如:由前述芳香環去除1個氫原子而得之基(芳基:可列舉如:苯基、萘基等)、前述芳香環的氫原子中之1個被伸烷基取代而得之基(可列舉如:苄基、苯乙基、1-萘基甲基、2-萘基甲基、1-萘基乙基、2-萘基乙基等之芳烷基等)等。前述伸烷基(芳烷基中之烷鏈)之碳數,以1~4為佳,以碳數1~2為較佳,以碳數1為特佳。The aromatic hydrocarbon groups in Rx 5 to Rx 6 and Rz 1 to Rz 4 are hydrocarbon groups having an aromatic ring. The carbon number of the aromatic hydrocarbon group is preferably 3-30, more preferably 5-30, more preferably 5-20, particularly preferably 6-15, and 6-30. 10 is the best. Wherein, the carbon number does not include the carbon number in the substituent. The aromatic rings possessed by the aromatic hydrocarbon groups in Rx 5 to Rx 6 and Rz 1 to Rz 4 specifically include, for example, benzene, terrene, naphthalene, anthracene, phenanthrene, biphenyl, or the aromatic rings that constitute these aromatic rings. Aromatic heterocycles in which part of the carbon atoms are replaced by heteroatoms, etc. The hetero atom in the aromatic heterocycle includes, for example, an oxygen atom, a sulfur atom, a nitrogen atom, and the like. The aromatic hydrocarbon groups in Rx 5 to Rx 6 and Rz 1 to Rz 4 specifically include groups obtained by removing one hydrogen atom from the aforementioned aromatic ring (aryl groups: for example: phenyl, naphthalene, etc.) group, etc.), a group obtained by substituting one of the hydrogen atoms of the aforementioned aromatic ring with an alkylene group (for example: benzyl, phenethyl, 1-naphthylmethyl, 2-naphthylmethyl, 1 Aralkyl groups such as -naphthylethyl, 2-naphthylethyl, etc.) etc. The carbon number of the aforementioned alkylene group (alkane chain in the aralkyl group) is preferably 1-4, more preferably 1-2, and particularly preferably 1.

Rx5 ~Rx6 、Rz1 ~Rz4 中之環狀之脂肪族烴基,可列舉如:結構中含有環之脂肪族烴基等。 該結構中含有環之脂肪族烴基,可列舉如:脂環式烴基(由脂肪族烴環去除1個氫原子而得之基)、脂環式烴基鍵結於直鏈狀或支鏈狀之脂肪族烴基的末端而得之基、脂環式烴基介於直鏈狀或支鏈狀之脂肪族烴基中間而得之基等。 前述脂環式烴基,以碳數3~20為佳,以碳數3~12為較佳。 前述脂環式烴基,可為多環式基亦可、單環式基亦可。單環式之脂環式烴基,以由單環鏈烷去除1個以上的氫原子而得之基為佳。該單環鏈烷,以碳數3~6者為佳,具體而言,可列舉如:環戊烷、環己烷等。多環式之脂環式烴基,以由多環鏈烷去除1個以上的氫原子而得之基為佳,該多環鏈烷,以碳數7~30者為佳。其中,該多環鏈烷又以:金剛烷、降莰烷、異莰烷、三環癸烷、四環十二烷等的具有交聯環系之多環式骨架的多環鏈烷;具有膽固醇骨架之環式基等縮合環系之具有多環式骨架的多環鏈烷為較佳。The cyclic aliphatic hydrocarbon group in Rx 5 to Rx 6 and Rz 1 to Rz 4 includes, for example, an aliphatic hydrocarbon group containing a ring in its structure. The aliphatic hydrocarbon group containing a ring in the structure includes, for example: an alicyclic hydrocarbon group (a group obtained by removing one hydrogen atom from an aliphatic hydrocarbon ring), an alicyclic hydrocarbon group bonded to a straight chain or a branched chain A group obtained at the end of an aliphatic hydrocarbon group, a group obtained by interposing an alicyclic hydrocarbon group in the middle of a linear or branched aliphatic hydrocarbon group, etc. The aforementioned alicyclic hydrocarbon group preferably has 3 to 20 carbons, more preferably 3 to 12 carbons. The aforementioned alicyclic hydrocarbon group may be a polycyclic group or a monocyclic group. The monocyclic alicyclic hydrocarbon group is preferably a group obtained by removing one or more hydrogen atoms from a monocyclic alkane. The monocyclic alkanes preferably have 3 to 6 carbon atoms, and specific examples include cyclopentane and cyclohexane. The polycyclic alicyclic hydrocarbon group is preferably a group obtained by removing one or more hydrogen atoms from a polycyclic alkane, and the polycyclic alkane preferably has 7 to 30 carbon atoms. Among them, the polycyclic alkanes are: adamantane, norbornane, isobornane, tricyclodecane, tetracyclododecane, etc., which have polycyclic skeletons with cross-linked ring systems; A polycyclic alkane having a polycyclic skeleton of a condensed ring system such as a cyclic group of a cholesterol skeleton is preferable.

其中,Rx5 ~Rx6 、Rz1 ~Rz4 中之環狀之脂肪族烴基,又以由單環鏈烷或多環鏈烷去除1個以上的氫原子而得之基為佳,以由單環鏈烷去除1個氫原子而得之基為較佳,以由環戊烷或環己烷去除1個氫原子而得之基為特佳。Among them, the cyclic aliphatic hydrocarbon groups in Rx 5 to Rx 6 and Rz 1 to Rz 4 are preferably those obtained by removing one or more hydrogen atoms from monocyclic alkanes or polycyclic alkanes. A group obtained by removing one hydrogen atom from monocyclic alkane is preferable, and a group obtained by removing one hydrogen atom from cyclopentane or cyclohexane is particularly preferable.

可與脂環式烴基鍵結的直鏈狀之脂肪族烴基,以碳數為1~10為佳,以碳數1~6為較佳,以碳數1~4為更佳,以碳數1~3為最佳。直鏈狀之脂肪族烴基,以直鏈狀之伸烷基為佳,具體而言,可列舉如:伸甲基 [-CH2 -]、伸乙基[-(CH2 )2 -]、伸三甲基[-(CH2 )3 -]、伸四甲基[-(CH2 )4 -]、伸五甲基[-(CH2 )5 -]等。 可與脂環式烴基鍵結的支鏈狀之脂肪族烴基,以碳數2~10為佳,以碳數3~6為較佳,以碳數3或4為更佳,以碳數3為最佳。支鏈狀之脂肪族烴基,以支鏈狀之伸烷基為佳,具體而言,可列舉如:-CH(CH3 )-、-CH(CH2 CH3 )-、 -C(CH3 )2 -、-C(CH3 )(CH2 CH3 )-、-C(CH3 )(CH2 CH2 CH3 )-、-C(CH2 CH3 )2 -等之烷基伸甲基;-CH(CH3 )CH2 -、-CH(CH3 )CH(CH3 )-、 -C(CH3 )2 CH2 -、-CH(CH2 CH3 )CH2 -、-C(CH2 CH3 )2 -CH2 -等之烷基伸乙基;-CH(CH3 )CH2 CH2 -、-CH2 CH(CH3 )CH2 -等之烷基伸三甲基;-CH(CH3 )CH2 CH2 CH2 -、-CH2 CH(CH3 )CH2 CH2 - 等之烷基伸四甲基等之烷基伸烷基等。烷基伸烷基中之烷基,以碳數1~5之直鏈狀之烷基為佳。A straight-chain aliphatic hydrocarbon group that can be bonded to an alicyclic hydrocarbon group, preferably with 1 to 10 carbons, more preferably 1 to 6 carbons, more preferably 1 to 4 carbons, and with 1 to 4 carbons 1 to 3 is the best. Straight-chain aliphatic hydrocarbon groups are preferably straight-chain alkylene groups. Specifically, examples include: methylene [-CH 2 -], ethylene [-(CH 2 ) 2 -], Trimethyl[-(CH 2 ) 3 -], Tetramethyl[-(CH 2 ) 4 -], Pentamethyl[-(CH 2 ) 5 -], etc. A branched aliphatic hydrocarbon group that can be bonded to an alicyclic hydrocarbon group, preferably with 2 to 10 carbons, more preferably 3 to 6 carbons, more preferably 3 or 4 carbons, and 3 carbons for the best. The branched aliphatic hydrocarbon group is preferably a branched chain alkylene group. Specifically, examples include: -CH(CH 3 )-, -CH(CH 2 CH 3 )-, -C(CH 3 ) 2 -, -C(CH 3 )(CH 2 CH 3 )-, -C(CH 3 )(CH 2 CH 2 CH 3 )-, -C(CH 2 CH 3 ) 2 -, etc. ; -CH(CH 3 )CH 2 -, -CH(CH 3 )CH(CH 3 )-, -C(CH 3 ) 2 CH 2 -, -CH(CH 2 CH 3 )CH 2 -, -C( CH 2 CH 3 ) 2 -CH 2 - and other alkyl ethylene groups; -CH(CH 3 ) CH 2 CH 2 -, -CH 2 CH(CH 3 ) CH 2 - and other alkyl trimethyl groups; -CH (CH 3 )CH 2 CH 2 CH 2 -, -CH 2 CH(CH 3 )CH 2 CH 2 -, alkylene such as tetramethylene, alkylene such as tetramethyl, etc. The alkyl group in the alkylene group is preferably a linear alkyl group having 1 to 5 carbon atoms.

又,Rx5 ~Rx6 、Rz1 ~Rz4 之該環式基,例如 -COORXYZ 、-OC(=O)RXYZ 中,RXYZ 為含內酯之環式基、含碳酸酯之環式基或含-SO2 -之環式基者。In addition, the cyclic groups of Rx 5 to Rx 6 and Rz 1 to Rz 4 , for example, in -COOR XYZ and -OC(=O)R XYZ , R XYZ is a lactone-containing cyclic group or a carbonate-containing ring A formula group or a ring group containing -SO 2 -.

Rx5 ~Rx6 、Rz1 ~Rz4 的環式基中之取代基,可列舉如:烷基、烷氧基、鹵素原子、鹵化烷基、羥基、硝基、羰基等。 作為取代基之烷基,以碳數1~5之烷基為佳,以甲基、乙基、丙基、n-丁基、tert-丁基為最佳。 作為取代基之烷氧基,以碳數數1~5之烷氧基為佳,以甲氧基、乙氧基、n-丙氧基、iso-丙氧基、n-丁氧基、tert-丁氧基為較佳,以甲氧基、乙氧基為最佳。 作為取代基之鹵素原子,可列舉如:氟原子、氯原子、溴原子、碘原子等,又以氟原子為佳。 作為取代基之鹵化烷基,為碳數1~5之烷基,例如甲基、乙基、丙基、n-丁基、tert-丁基等的氫原子之一部份或全部被前述鹵素原子取代而得之基等。 作為取代基之羰基,為取代構成環狀烴基的伸甲基 (-CH2 -)之基。The substituents in the cyclic groups of Rx 5 to Rx 6 and Rz 1 to Rz 4 include, for example, alkyl groups, alkoxy groups, halogen atoms, halogenated alkyl groups, hydroxyl groups, nitro groups, and carbonyl groups. The alkyl group as the substituent is preferably an alkyl group having 1 to 5 carbon atoms, most preferably a methyl group, ethyl group, propyl group, n-butyl group, or tert-butyl group. The alkoxy group as a substituent is preferably an alkoxy group with 1 to 5 carbon atoms, such as methoxy, ethoxy, n-propoxy, iso-propoxy, n-butoxy, tert -Butoxy is preferred, and methoxy and ethoxy are most preferred. The halogen atom as a substituent includes, for example, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, etc., and a fluorine atom is preferred. The halogenated alkyl group as a substituent is an alkyl group with 1 to 5 carbon atoms, such as methyl, ethyl, propyl, n-butyl, tert-butyl, etc., part or all of the hydrogen atoms of the aforementioned halogen Substitution of atoms, etc. The carbonyl group as a substituent is a group substituting a methylene group (-CH 2 -) constituting a cyclic hydrocarbon group.

可具有取代基的鏈狀之烷基: Rx5 ~Rx6 、Rz1 ~Rz4 之鏈狀烷基,可為直鏈狀或支鏈狀之任一者。 直鏈狀之烷基,以碳數1~20為佳,以碳數1~15為較佳,以碳數1~10為最佳。具體而言,可列舉如:甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、壬基、癸基、十一烷基、十二烷基、十三烷基、異十三烷基、十四烷基、十五烷基、十六烷基、異十六烷基、十七烷基、十八烷基、十九烷基、二十烷基、二十一烷基、二十二烷基等。 支鏈狀之烷基,以碳數3~20為佳,以碳數3~15為較佳,以碳數3~10為最佳。具體而言,可列舉如:1-甲基乙基、1,1-二甲基乙基、1-甲基丙基、2-甲基丙基、1-甲基丁基、2-甲基丁基、3-甲基丁基、1-乙基丁基、2-乙基丁基、1-甲基戊基、2-甲基戊基、3-甲基戊基、4-甲基戊基等。Chained alkyl groups which may have substituents: The chained alkyl groups of Rx 5 to Rx 6 and Rz 1 to Rz 4 may be linear or branched. The linear alkyl group preferably has 1 to 20 carbons, more preferably 1 to 15 carbons, most preferably 1 to 10 carbons. Specifically, examples include: methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl, tridecyl base, isotridecyl, tetradecyl, pentadecyl, hexadecyl, isohexadecyl, heptadecyl, octadecyl, nonadecyl, eicosyl, two Undecyl, behenyl, etc. The branched alkyl group preferably has 3-20 carbons, more preferably 3-15 carbons, most preferably 3-10 carbons. Specifically, examples include: 1-methylethyl, 1,1-dimethylethyl, 1-methylpropyl, 2-methylpropyl, 1-methylbutyl, 2-methyl Butyl, 3-methylbutyl, 1-ethylbutyl, 2-ethylbutyl, 1-methylpentyl, 2-methylpentyl, 3-methylpentyl, 4-methylpentyl Base etc.

可具有取代基的鏈狀之烯基: Rx5 ~Rx6 、Rz1 ~Rz4 之鏈狀烯基,可為直鏈狀或支鏈狀之任一者皆可,又以碳數2~10為佳,以碳數2~5為較佳,以碳數2~4為更佳,以碳數3為特佳。直鏈狀之烯基,例如:乙烯基、丙烯基(烯丙基)、丁炔基等。 支鏈狀之烯基,可列舉如:1-甲基乙烯基、2-甲基乙烯基、1-甲基丙烯基、2-甲基丙烯基等。 鏈狀之烯基,於上述之中,又以直鏈狀之烯基為佳,以乙烯基、丙烯基為較佳,以乙烯基為特佳。Chain alkenyl groups that may have substituents: Chain alkenyl groups of Rx 5 ~ Rx 6 , Rz 1 ~ Rz 4 can be either straight chain or branched chain, and the carbon number is 2 ~ Preferably 10, more preferably 2-5 carbons, more preferably 2-4 carbons, particularly preferably 3 carbons. Straight-chain alkenyl, such as vinyl, propenyl (allyl), butynyl, etc. Examples of branched alkenyl include 1-methylvinyl, 2-methylvinyl, 1-methylacryl, 2-methacryl, and the like. Among the above chain alkenyl groups, straight chain alkenyl groups are preferred, vinyl and propenyl groups are preferred, and vinyl groups are particularly preferred.

Rx5 ~Rx6 、Rz1 ~Rz4 之鏈狀烷基或烯基中的取代基,可列舉如:烷氧基、鹵素原子(氟原子、氯原子、溴原子、碘原子等)、鹵化烷基、羥基、羰基、硝基、胺基、上述Rx5 ~Rx6 、Rz1 ~Rz4 中之環式基等。The substituents in the chain alkyl or alkenyl of Rx 5 ~ Rx 6 , Rz 1 ~ Rz 4 include, for example: alkoxy, halogen atom (fluorine atom, chlorine atom, bromine atom, iodine atom, etc.), halogenated Alkyl group, hydroxyl group, carbonyl group, nitro group, amino group, cyclic group among Rx 5 to Rx 6 , Rz 1 to Rz 4 mentioned above, etc.

Rx5 ~Rx6 、Rz1 ~Rz4 中之烴基,於上述之烴基中,又以可具有取代基之環式基、可具有取代基之鏈狀烷基為佳。The hydrocarbon groups in Rx 5 to Rx 6 and Rz 1 to Rz 4 are preferably cyclic groups which may have substituents or chain alkyl groups which may have substituents among the above hydrocarbon groups.

前述式(b-1-5)中,Rz1 ~Rz4 ,其2個以上可相互鍵結而形成環結構。可列舉如:Rz1 ,可與Rz2 ~Rz4 之任一者形成環結構。具體而言,可列舉如:共有式(b-1-5)中之六員環之一邊(由Rz1 及Rz2 鍵結的碳原子,與Rz3 及Rz4 鍵結的碳原子所形成的鍵結)之環結構、由Rz1 與Rz2 鍵結而形成之環結構、Rz3 與Rz4 鍵結而形成之環結構等。 該Rz1 ~Rz4 中,由2個以上形成之環結構,可為脂環式烴亦可、芳香族烴亦可,又以芳香族烴為特佳。 又,該環結構,亦可由該些以外的環結構所形成的多環結構。In the aforementioned formula (b-1-5), two or more of Rz 1 to Rz 4 may be bonded to each other to form a ring structure. For example, Rz 1 may form a ring structure with any of Rz 2 to Rz 4 . Specifically, for example, one side of the six-membered ring in the common formula (b-1-5) (formed by the carbon atom bonded to Rz 1 and Rz 2 , and the carbon atom bonded to Rz 3 and Rz 4 The ring structure of the bond), the ring structure formed by the bond of Rz 1 and Rz 2 , the ring structure formed by the bond of Rz 3 and Rz 4 , etc. Among these Rz 1 to Rz 4 , the ring structure formed of two or more may be an alicyclic hydrocarbon or an aromatic hydrocarbon, and an aromatic hydrocarbon is particularly preferable. In addition, the ring structure may be a polycyclic structure formed of ring structures other than these.

由Rz1 ~Rz4 中之2個以上所形成之脂環式烴,可為多環亦可、單環亦可。單環之脂環式烴,又以單環鏈烷為佳。該單環鏈烷,以碳數3~6者為佳,具體而言,可列舉如:環戊烷、環己烷等。多環之脂環式烴,以多環鏈烷為佳。該多環鏈烷,以碳數7~30者為佳,具體而言,又以具有金剛烷、降莰烷、異莰烷、三環癸烷、四環十二烷等交聯環系之多環式骨架的多環鏈烷;具有膽固醇骨架之環式基等縮合環系之具有多環式骨架的多環鏈烷為較佳。 亦可為碳原子的一部份被雜原子取代而得之雜環結構,又以含氮雜環為特佳,具體而言,例如:環狀醯亞胺等。The alicyclic hydrocarbon formed from two or more of Rz 1 to Rz 4 may be polycyclic or monocyclic. Monocyclic alicyclic hydrocarbons are preferably monocyclic alkanes. The monocyclic alkanes preferably have 3 to 6 carbon atoms, and specific examples include cyclopentane and cyclohexane. Polycyclic alicyclic hydrocarbons are preferably polycyclic alkanes. The polycyclic alkanes are preferably those with 7 to 30 carbon atoms. Specifically, those with cross-linked ring systems such as adamantane, norbornane, isobornane, tricyclodecane, tetracyclododecane, etc. Polycyclic alkanes with a polycyclic skeleton; polycyclic alkanes with a polycyclic skeleton having a condensed ring system such as a cyclic group having a cholesterol skeleton are preferred. It can also be a heterocyclic structure in which part of the carbon atoms are replaced by heteroatoms, and nitrogen-containing heterocyclic rings are particularly preferred, specifically, for example: cyclic imides and the like.

由Rz1 ~Rz4 中之2個以上所形成的芳香族烴,可列舉如:苯、茀、萘、蒽、菲、聯苯,或構成該些芳香環的碳原子之一部份被雜原子取代而得之芳香族雜環等。Aromatic hydrocarbons formed by two or more of Rz 1 to Rz 4 , such as: benzene, terrene, naphthalene, anthracene, phenanthrene, biphenyl, or some of the carbon atoms constituting these aromatic rings are heterogeneous Aromatic heterocycles obtained by atom substitution, etc.

Rz1 ~Rz4 所形成的環結構(脂環式烴、芳香族烴),可具有取代基。此處之取代基,例如:與上述Rx1 ~Rx4 、Ry1 ~Ry2 、Rz1 ~Rz4 的環式基中之取代基(例如:烷基、烷氧基、鹵素原子、鹵化烷基、羥基、硝基、羰基等)為相同之內容等。The ring structure (alicyclic hydrocarbon, aromatic hydrocarbon) formed by Rz 1 to Rz 4 may have a substituent. The substituents here are, for example: the substituents in the cyclic groups of Rx 1 ~ Rx 4 , Ry 1 ~ Ry 2 , Rz 1 ~ Rz 4 mentioned above (such as: alkyl, alkoxy, halogen atom, halogenated alkyl group, hydroxyl group, nitro group, carbonyl group, etc.) are the same content, etc.

由Rz1 ~Rz4 中之2個以上所形成的環結構,其中,就控制經由曝光而產生之酸的擴散之觀點,以共有式(b-1-5)中之六員環的一邊(Rz1 及Rz2 鍵結的碳原子,與Rz3 及Rz4 鍵結的碳原子之鍵結)之環結構為佳,以芳香環結構為較佳。A ring structure formed by two or more of Rz 1 to Rz 4 , wherein, from the viewpoint of controlling the diffusion of acid generated by exposure, one side of the six-membered ring in the common formula (b-1-5) ( The carbon atoms to which Rz 1 and Rz 2 are bonded, and the carbon atoms to which Rz 3 and Rz 4 are bonded) ring structures are preferred, and aromatic ring structures are more preferred.

又,前述式(b-1-5)中,「原子價容許時」係為以下之內容。 即,Rz1 及Rz2 鍵結之碳原子,與Rz3 及Rz4 鍵結之碳原子的鍵結為單鍵時,Rz1 、Rz2 、Rz3 及Rz4 為全部存在。Rz1 及Rz2 鍵結之碳原子,與Rz3 及Rz4 鍵結之碳原子的鍵結為雙鍵時,Rz1 或Rz2 中僅一者存在,且,Rz3 及Rz4 中僅一者存在。又,例如Rz1 與Rz3 鍵結形成芳香環結構時,Rz2 及Rz4 皆不存在。In addition, in the aforementioned formula (b-1-5), "when the atomic valence is allowed" means the following. That is, when the carbon atoms to which Rz 1 and Rz 2 are bonded, and the carbon atoms to which Rz 3 and Rz 4 are bonded are single bonds, all Rz 1 , Rz 2 , Rz 3 , and Rz 4 exist. When the carbon atom bonded to Rz 1 and Rz 2 is double bonded to the carbon atom bonded to Rz 3 and Rz 4 , only one of Rz 1 or Rz 2 exists, and only one of Rz 3 and Rz 4 exists One exists. Also, for example, when Rz 1 and Rz 3 are bonded to form an aromatic ring structure, neither Rz 2 nor Rz 4 exists.

前述式(b-1-5)中,R021 為烷基、烷氧基、鹵素原子、鹵化烷基、羥基、羰基或硝基。 R021 中之烷基,以碳數1~5之烷基為佳,以甲基、乙基、丙基、n-丁基、tert-丁基為最佳。 R021 中之烷氧基,以碳數1~5之烷氧基為佳,以甲氧基、乙氧基、n-丙氧基、iso-丙氧基、n-丁氧基、tert-丁氧基為較佳,以甲氧基、乙氧基為最佳。 R021 中之鹵素原子,可列舉如:氟原子、氯原子、溴原子、碘原子等,又以氟原子為佳。 R021 中之鹵化烷基,為碳數1~5之烷基,例如甲基、乙基、丙基、n-丁基、tert-丁基等中的氫原子之一部份或全部被前述鹵素原子取代而得之基等。In the aforementioned formula (b-1-5), R 021 is an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, a carbonyl group or a nitro group. The alkyl group in R 021 is preferably an alkyl group with 1 to 5 carbon atoms, especially methyl, ethyl, propyl, n-butyl, and tert-butyl. The alkoxy group in R 021 is preferably an alkoxy group with 1 to 5 carbon atoms, such as methoxy, ethoxy, n-propoxy, iso-propoxy, n-butoxy, tert- Butoxy is preferred, and methoxy and ethoxy are most preferred. The halogen atom in R 021 includes, for example, fluorine atom, chlorine atom, bromine atom, iodine atom, etc., and fluorine atom is preferred. The halogenated alkyl group in R 021 is an alkyl group with 1 to 5 carbon atoms, such as a part or all of the hydrogen atoms in methyl, ethyl, propyl, n-butyl, tert-butyl, etc. A group obtained by substituting a halogen atom, etc.

前述式(b-1-5)中,n1為1~3之整數,較佳為1或2,特佳為1。 前述式(b-1-5)中,n11為0~8之整數,較佳為0~4之整數,更佳為0、1或2,特佳為0或1。In the aforementioned formula (b-1-5), n1 is an integer of 1 to 3, preferably 1 or 2, particularly preferably 1. In the aforementioned formula (b-1-5), n11 is an integer of 0-8, preferably an integer of 0-4, more preferably 0, 1 or 2, particularly preferably 0 or 1.

前述式(b-1-5)中,R022 為烷基、烷氧基、鹵素原子、鹵化烷基、羥基、羰基或硝基,分別與前述之R021 為相同之內容等。 前述式(b-1-5)中,n2為1~3之整數,較佳為1或2,特佳為1。 前述式(b-1-5)中,n21為0~8之整數,較佳為0~4之整數,更佳為0、1或2,特佳為0或1。In the aforementioned formula (b-1-5), R 022 is an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, a carbonyl group, or a nitro group, and the contents are the same as those of the aforementioned R 021 . In the aforementioned formula (b-1-5), n2 is an integer of 1 to 3, preferably 1 or 2, particularly preferably 1. In the aforementioned formula (b-1-5), n21 is an integer of 0-8, preferably an integer of 0-4, more preferably 0, 1 or 2, particularly preferably 0 or 1.

其中,前述式(b-1-5)中,Rx5 ~Rx6 及Rz1 ~Rz4 中之至少1個,具有前述式(b1-r-an1)所表示之陰離子基,且使陰離子部全體為n價的陰離子。n為1以上之整數。Wherein, in the aforementioned formula (b-1-5), at least one of Rx 5 to Rx 6 and Rz 1 to Rz 4 has an anionic group represented by the aforementioned formula (b1-r-an1), and the anionic part All are n-valent anions. n is an integer of 1 or more.

前述式(b1-r-an1)中,Rb01 表示碳數1~5之氟化烷基或氟原子。Rb01 以碳數1~5之全氟烷基或氟原子為佳,以氟原子為較佳。In the aforementioned formula (b1-r-an1), R b01 represents a fluorinated alkyl group having 1 to 5 carbon atoms or a fluorine atom. R b01 is preferably a perfluoroalkyl group having 1 to 5 carbon atoms or a fluorine atom, more preferably a fluorine atom.

前述式(b1-r-an1)中,Vb01 表示伸烷基、氟化伸烷基或單鍵。 Vb01 中之伸烷基、氟化伸烷基,分別以碳數1~4為佳,以碳數1~3為較佳。Vb01 中之氟化伸烷基為,伸烷基的氫原子之一部份或全部被氟原子取代而得之基等。其中,Vb01 又以碳數1~4之伸烷基、碳數1~4之氟化伸烷基或單鍵為佳。In the aforementioned formula (b1-r-an1), V b01 represents an alkylene group, a fluorinated alkylene group, or a single bond. The alkylene group and fluorinated alkylene group in V b01 preferably have 1 to 4 carbon atoms, more preferably 1 to 3 carbon atoms. The fluorinated alkylene group in V b01 is a group obtained by substituting part or all of the hydrogen atoms of the alkylene group with fluorine atoms, etc. Among them, V b01 is preferably an alkylene group having 1 to 4 carbons, a fluorinated alkylene group having 1 to 4 carbons, or a single bond.

前述式(b1-r-an1)中,Yb01 表示2價之連結基或單鍵。 Yb01 中的2價之連結基,以含有氧原子的2價之連結基為較佳之例示。 Yb01 為含有氧原子的2價之連結基時,該Yb01 亦可含有氧原子以外的原子。氧原子以外的原子,例如:碳原子、氫原子、硫原子、氮原子等。 含有氧原子的2價之連結基,可列舉如:氧原子(醚鍵結:-O-)、酯鍵結(-C(=O)-O-)、氧羰基(-O-C(=O)-)、醯胺鍵結(-C(=O)-NH-)、羰基(-C(=O)-)、碳酸酯鍵結(-O-C(=O)-O-) 等的非烴系之含有氧原子的連結基;該非烴系之含有氧原子的連結基與伸烷基之組合等。該組合中,可再連結磺醯基(-SO2 -)。 該含有氧原子的2價之連結基,可列舉如:前述通式(y-al-1)~(y-al-9)各別表示之連結基等。In the aforementioned formula (b1-r-an1), Y b01 represents a divalent linking group or a single bond. The divalent linking group in Y b01 is preferably exemplified by a divalent linking group containing an oxygen atom. When Y b01 is a divalent linking group containing an oxygen atom, this Y b01 may contain atoms other than an oxygen atom. Atoms other than oxygen atoms, such as carbon atoms, hydrogen atoms, sulfur atoms, nitrogen atoms, etc. Divalent linking groups containing oxygen atoms, such as: oxygen atom (ether bond: -O-), ester bond (-C(=O)-O-), oxycarbonyl (-OC(=O) -), amide bond (-C(=O)-NH-), carbonyl (-C(=O)-), carbonate bond (-OC(=O)-O-) and other non-hydrocarbon systems A linking group containing an oxygen atom; a combination of the non-hydrocarbon-based linking group containing an oxygen atom and an alkylene group, etc. In this combination, a sulfonyl group (-SO 2 -) may be further bonded. Examples of the divalent linking group containing an oxygen atom include linking groups represented by the aforementioned general formulas (y-al-1) to (y-al-9), respectively.

Yb01 以含有酯鍵結的2價之連結基,或含有醚鍵結的2價之連結基為佳,以前述式(y-al-1)~(y-al-6)各別表示之連結基為較佳。Y b01 is preferably a divalent linking group containing an ester bond, or a divalent linking group containing an ether bond, represented by the aforementioned formulas (y-al-1) to (y-al-6) respectively A linker is preferred.

前述式(b1-r-an1)所表示之陰離子基之具體例,可列舉如: Yb01 為單鍵時,例如:-CH2 CF2 SO3 - 、-CF2 CF2 SO3 - 、三氟甲烷磺酸酯陰離子或全氟丁烷磺酸酯陰離子等之氟化烷基磺酸酯陰離子。 Yb01 為含有氧原子的2價之連結基時,例如:下述式(b1-r-an11)~(b1-r-an13)中任一者所表示之陰離子。Specific examples of the anionic group represented by the aforementioned formula (b1-r-an1) include: When Y b01 is a single bond, for example: -CH 2 CF 2 SO 3 - , -CF 2 CF 2 SO 3 - , - Fluorinated alkylsulfonate anion such as fluoromethanesulfonate anion or perfluorobutanesulfonate anion. When Y b01 is a divalent linking group containing an oxygen atom, it is, for example, an anion represented by any one of the following formulas (b1-r-an11) to (b1-r-an13).

Figure 02_image131
[式中,V”101 為單鍵、碳數1~4之伸烷基,或碳數1~4之氟化伸烷基。R102 為氟原子或碳數1~5之氟化烷基。v”各別獨立為0~3之整數。q”各別獨立為1~20之整數。n”為0或1]。
Figure 02_image131
[In the formula, V" 101 is a single bond, an alkylene group with 1 to 4 carbons, or a fluorinated alkylene group with 1 to 4 carbons. R 102 is a fluorine atom or a fluorinated alkyl group with 1 to 5 carbons .v" are each independently an integer of 0-3. q" are each independently an integer of 1 to 20. n" is 0 or 1].

前述式(b1-r-an11)~(b1-r-an13)中,V”101 為單鍵、碳數1~4之伸烷基,或碳數1~4之氟化伸烷基。V”101 又以單鍵、碳數1之伸烷基(伸甲基),或碳數1~3之氟化伸烷基為佳。In the aforementioned formulas (b1-r-an11) to (b1-r-an13), V" 101 is a single bond, an alkylene group with 1 to 4 carbons, or a fluorinated alkylene group with 1 to 4 carbons. V " 101 is preferably a single bond, an alkylene group (methylene) with 1 carbon, or a fluorinated alkylene group with 1 to 3 carbons.

前述式(b1-r-an11)~(b1-r-an13)中,R102 為氟原子或碳數1~5之氟化烷基。R102 以碳數1~5之全氟烷基或氟原子為佳,以氟原子為較佳。In the aforementioned formulas (b1-r-an11) to (b1-r-an13), R 102 is a fluorine atom or a fluorinated alkyl group having 1 to 5 carbons. R 102 is preferably a perfluoroalkyl group having 1 to 5 carbon atoms or a fluorine atom, more preferably a fluorine atom.

前述式(b1-r-an11)~(b1-r-an13)中,v”為0~3之整數,較佳為0或1。 q”為1~20之整數,較佳為1~10之整數,更佳為1~5之整數,更佳為1、2或3,特佳為1或2。 n”為0或1,較佳為0。In the aforementioned formulas (b1-r-an11) to (b1-r-an13), v" is an integer of 0-3, preferably 0 or 1. q" is an integer of 1-20, preferably an integer of 1-10, more preferably an integer of 1-5, more preferably 1, 2 or 3, particularly preferably 1 or 2. n" is 0 or 1, preferably 0.

(b-1-5)成份中之陰離子基之數,可為1個亦可、2個以上亦可,又以1個為佳。 (b-1-5)成份,為使陰離子部全體為n價的陰離子。n為1以上之整數,又以1或2為佳,以1為較佳。(b-1-5) The number of anionic groups in the component may be 1 or 2 or more, preferably 1. The component (b-1-5) is an anion that makes the entire anion portion an n-valent anion. n is an integer of 1 or more, preferably 1 or 2, more preferably 1.

(B1)成份的較佳化合物之具體例,例如以下列舉者。Specific examples of preferred compounds of the component (B1) are listed below, for example.

Figure 02_image133
Figure 02_image133

Figure 02_image135
Figure 02_image135

本實施形態之阻劑組成物中,(B1)成份,可單獨使用1種亦可、將2種以上合併使用亦可。 本實施形態之阻劑組成物中,(B1)成份之含量,相對於(A)成份100質量份,以0.1~100質量份為佳,以0.5~80質量份為較佳,以1~60質量份為更佳。 (B1)成份之含量,於前述較佳範圍的下限值以上時,於阻劑圖型形成中,更能提高感度、解析性能、降低LWR (Line Wise Roughness)、形狀等的微影蝕刻特性。另一方面,於較佳範圍的上限值以下時,更容易抑制阻劑圖型之膜消減。In the resist composition of this embodiment, (B1) component may be used individually by 1 type, and may use 2 or more types together. In the resist composition of this embodiment, the content of component (B1) is preferably 0.1 to 100 parts by mass, more preferably 0.5 to 80 parts by mass, and 1 to 60 parts by mass relative to 100 parts by mass of component (A). The quality part is better. (B1) When the content of the component is above the lower limit of the above-mentioned preferred range, it can improve the sensitivity, resolution performance, reduce LWR (Line Wise Roughness), shape and other lithographic etching characteristics in the formation of resist patterns . On the other hand, when it is below the upper limit of the preferable range, it is easier to suppress the film loss of the resist pattern.

・(B2)成份 本實施形態之阻劑組成物中,於無損本發明效果之範圍,可含有(B1)成份以外的酸產生劑成份(以下,亦稱為「(B2)成份」)。 (B2)成份,並未有特別之限定,其可使用目前為止被提案作化學增強型阻劑組成物用之酸產生劑者。 該些酸產生劑,可列舉如:錪鹽或鋶鹽等的鎓鹽系酸產生劑、肟磺酸酯系酸產生劑;雙烷基或雙芳基磺醯基重氮甲烷類、聚(雙磺醯基)重氮甲烷類等的重氮甲烷系酸產生劑;硝基苄基磺酸酯系酸產生劑、亞胺磺酸酯系酸產生劑、二碸系酸產生劑等多種的成份。・(B2) Components The resist composition of this embodiment may contain an acid generator component (hereinafter, also referred to as "(B2) component") other than the component (B1) within the range that does not impair the effect of the present invention. The component (B2) is not particularly limited, and it can be an acid generator proposed so far as a chemically amplified resist composition. These acid generators include, for example: onium salt-based acid generators such as odonium salts or permeic acid salts, oxime sulfonate-based acid generators; dialkyl or bisarylsulfonyl diazomethanes, poly( Diazomethane-based acid generators such as bissulfonyl) diazomethanes; nitrobenzylsulfonate-based acid generators, iminosulfonate-based acid generators, diazomethane-based acid generators, etc. ingredients.

鎓鹽系酸產生劑,例如:下述通式(b-1’)所表示之化合物(以下,亦稱為「(b-1’)成份」)、通式(b-2’)所表示之化合物(以下,亦稱為「(b-2’)成份」)或通式(b-3’)所表示之化合物(以下,亦稱為「(b-3’)成份」)等。又,(b-1’)成份、(b-2’)成份及(b-3’)成份,為不含有相當於上述(B1)成份之化合物者。Onium salt-based acid generators, for example: compounds represented by the following general formula (b-1') (hereinafter also referred to as "(b-1') component"), represented by general formula (b-2') (hereinafter also referred to as "component (b-2')") or a compound represented by the general formula (b-3') (hereinafter also referred to as "component (b-3')"). In addition, the components (b-1'), (b-2') and (b-3') do not contain a compound corresponding to the above-mentioned (B1) component.

Figure 02_image137
[式中,R301 、R304 ~R308 各別獨立為可具有取代基之環式基、可具有取代基之鏈狀烷基,或可具有取代基之鏈狀烯基。R304 、R305 可相互鍵結而形成環。 R302 為氟原子或碳數1~5之氟化烷基。Y301 為單鍵或含有氧原子的2價之連結基。V301 ~V303 各別獨立為單鍵、伸烷基或氟化伸烷基。L301 ~L302 各別獨立為單鍵或氧原子。L303 ~L305 各別獨立為單鍵、-CO-或-SO2 -。m為1以上之整數,且M’m+ 為m價之鎓陽離子]。
Figure 02_image137
[In the formula, R 301 , R 304 to R 308 are each independently a cyclic group that may have a substituent, a chain alkyl group that may have a substituent, or a chain alkenyl group that may have a substituent. R 304 and R 305 may be bonded to each other to form a ring. R302 is a fluorine atom or a fluorinated alkyl group having 1 to 5 carbons. Y301 is a single bond or a divalent linking group containing an oxygen atom. V 301 to V 303 are each independently a single bond, an alkylene group or a fluorinated alkylene group. L 301 to L 302 are each independently a single bond or an oxygen atom. L 303 to L 305 are each independently a single bond, -CO- or -SO 2 -. m is an integer of 1 or more, and M' m+ is an m-valent onium cation].

{陰離子部} ・(b-1’)成份之陰離子部 式(b-1’)中,R301 為可具有取代基之環式基、可具有取代基之鏈狀烷基,或可具有取代基之鏈狀烯基,與前述式(b-2)及前述式(b-3)中之R105 、R107 及R108 之可具有取代基之環式基、可具有取代基之鏈狀烷基,或可具有取代基之鏈狀烯基為相同之內容。{Anion part} ・In the anion part of the component (b-1'), in the formula (b-1'), R 301 is a cyclic group that may have a substituent, a chain alkyl group that may have a substituent, or an optional substituent The chain alkenyl group of the group, the cyclic group that may have substituents, the chain group that may have substituents of R 105 , R 107 and R 108 in the aforementioned formula (b-2) and the aforementioned formula (b-3) The same applies to an alkyl group or a chain alkenyl group which may have a substituent.

R301 之鏈狀烷基或烯基中的取代基,可列舉如:烷氧基、鹵素原子、鹵化烷基、羥基、羰基、胺基、上述R101 中之環式基等。The substituents in the chain alkyl or alkenyl of R 301 include, for example, alkoxy groups, halogen atoms, halogenated alkyl groups, hydroxyl groups, carbonyl groups, amino groups, and cyclic groups in the above-mentioned R 101 .

上述之中,R301 又以可具有取代基之環式基為佳,以可具有取代基之環狀烴基為較佳。更具體而言,以由苯基、萘基、多環鏈烷去除1個以上的氫原子而得之基;前述通式(a2-r-1)、(a2-r-3)~(a2-r-7)各別表示之含內酯之環式基;前述通式(a5-r-1)~(a5-r-4)各別表示之含-SO2 -之環式基等為佳。Among the above, R 301 is preferably a cyclic group that may have a substituent, more preferably a cyclic hydrocarbon group that may have a substituent. More specifically, the base obtained by removing one or more hydrogen atoms from phenyl, naphthyl, and polycyclic alkanes; the aforementioned general formulas (a2-r-1), (a2-r-3)~(a2 -r-7) respectively represent lactone-containing cyclic groups; the aforementioned general formulas (a5-r-1) ~ (a5-r-4) respectively represent -SO 2 -containing cyclic groups, etc. good.

式(b-1’)中,Y301 為單鍵或含有氧原子的2價之連結基。 Y301 之含有氧原子的2價之連結基,與前述式(b-1)中之Y101 之含有氧原子的2價之連結基為相同之內容。 Y301 以含有酯鍵結的2價之連結基,或含有醚鍵結的2價之連結基為佳,以前述通式(y-al-1)~(y-al-5)各別表示之連結基為較佳。In formula (b-1'), Y 301 is a single bond or a divalent linking group containing an oxygen atom. The divalent linking group containing an oxygen atom in Y 301 is the same as the divalent linking group containing an oxygen atom in Y 101 in the aforementioned formula (b-1). Y 301 is preferably a divalent linking group containing an ester bond, or a divalent linking group containing an ether bond, represented by the aforementioned general formulas (y-al-1) to (y-al-5) respectively The link base is better.

式(b-1’)中,V301 為單鍵、伸烷基或氟化伸烷基。V301 中之伸烷基、氟化伸烷基,與前述式(b-1)中之V101 之伸烷基、氟化伸烷基為相同之內容。In the formula (b-1'), V 301 is a single bond, an alkylene group or a fluorinated alkylene group. The alkylene group and fluorinated alkylene group in V301 are the same as the alkylene group and fluorinated alkylene group in V101 in the aforementioned formula (b-1).

式(b-1’)中,R302 為氟原子或碳數1~5之氟化烷基。R302 以氟原子或碳數1~5之全氟烷基為佳,以氟原子為較佳。In formula (b-1'), R 302 is a fluorine atom or a fluorinated alkyl group having 1 to 5 carbons. R 302 is preferably a fluorine atom or a perfluoroalkyl group having 1 to 5 carbon atoms, more preferably a fluorine atom.

(b-1’)成份的陰離子部之具體例,例如:Y301 為單鍵時,可列舉如:三氟甲烷磺酸酯陰離子或全氟丁烷磺酸酯陰離子等的氟化烷基磺酸酯陰離子;Y301 為含有氧原子的2價之連結基時,可列舉如:下述式(an-1)~(an-3)中任一者所表示之陰離子等。Specific examples of the anion part of the component (b-1'), for example: when Y301 is a single bond, fluorinated alkyl sulfonate such as trifluoromethanesulfonate anion or perfluorobutanesulfonate anion, etc. Ester anion; When Y 301 is a divalent linking group containing an oxygen atom, examples thereof include anions represented by any one of the following formulas (an-1) to (an-3).

Figure 02_image139
[式中,R”301 為可具有取代基之脂肪族環式基、前述式(r-hr-1)~(r-hr-6)所各別表示之基,或可具有取代基之鏈狀烷基;R”302 為可具有取代基之脂肪族環式基、前述通式(a2-r-1)、(a2-r-3)~(a2-r-7)各別表示之含內酯之環式基,或前述通式(a5-r-1)~(a5-r-4)各別表示之含-SO2 -之環式基;R”303 為可具有取代基芳香族環式基、可具有取代基之脂肪族環式基,或可具有取代基之鏈狀烯基;v”各別獨立為0~3之整數,q”各別獨立為1~20之整數,t”為1~3之整數,n”為0或1]。
Figure 02_image139
[In the formula, R" 301 is an aliphatic cyclic group that may have a substituent, a group represented by each of the aforementioned formulas (r-hr-1) to (r-hr-6), or a chain that may have a substituent R" 302 is an aliphatic cyclic group that may have substituents, and the above-mentioned general formulas (a2-r-1), (a2-r-3) ~ (a2-r-7) respectively represent the containing A cyclic group of a lactone, or a cyclic group containing -SO 2 - represented by the aforementioned general formulas (a5-r-1)~(a5-r-4); R" 303 is an aromatic group that may have substituents A cyclic group, an aliphatic cyclic group that may have a substituent, or a chain alkenyl group that may have a substituent; v" is each independently an integer of 0 to 3, and q" is each independently an integer of 1 to 20, t" is an integer from 1 to 3, and n" is 0 or 1].

R”301 、R”302 及R”303 之可具有取代基之脂肪族環式基,以前述式(b-2)及前述式(b-3)中之R105 、R107 及R108 中被例示作為環狀脂肪族烴基之基為佳。前述取代基,與可取代前述式(b-2)及前述式(b-3)中之R105 、R107 及R108 中之環狀脂肪族烴基的取代基為相同之內容等。R" 301 , R" 302 and R" 303 may have substituent aliphatic ring group, in the above-mentioned formula (b-2) and the above-mentioned formula (b-3) in R 105 , R 107 and R 108 The group exemplified as a cycloaliphatic hydrocarbon group is preferable. The above-mentioned substituent, and the cycloaliphatic in R 105 , R 107 and R 108 in the above-mentioned formula (b-2) and the above-mentioned formula (b-3) can be substituted The substituents of the hydrocarbon group have the same content and so on.

R”303 中之可具有取代基芳香族環式基,以前述式(b-2)及前述式(b-3)中之R105 、R107 及R108 中被例示作為環狀烴基中之芳香族烴基之基為佳。前述取代基,與可取代前述式(b-2)及前述式(b-3)中之R105 、R107 及R108 中之該芳香族烴基的取代基為相同之內容等。The aromatic ring group that may have a substituent in R" 303 is exemplified as the cyclic hydrocarbon group in the aforementioned formula (b-2) and R 105 , R 107 , and R 108 in the aforementioned formula (b-3). The base of the aromatic hydrocarbon group is preferred. The aforementioned substituent, and the substituent that can replace the aforementioned aromatic hydrocarbon group in R 105 , R 107 and R 108 in the aforementioned formula (b-2) and the aforementioned formula (b-3) are same content etc.

R”301 中之可具有取代基之鏈狀烷基,以前述式(b-2)及前述式(b-3)中之R105 、R107 及R108 中被例示作為鏈狀烷基之基為佳。R”303 中之可具有取代基之鏈狀烯基,以前述式(b-2)及前述式(b-3)中之R105 、R107 及R108 中被例示作為鏈狀烯基之基為佳。The chain-like alkyl group which may have a substituent in R" 301 is exemplified as the chain-like alkyl group in the aforementioned formula (b-2) and the aforementioned formula (b-3) in R 105 , R 107 and R 108 The chain alkenyl group which may have a substituent in R" 303 is exemplified as a chain in R 105 , R 107 and R 108 in the aforementioned formula (b-2) and the aforementioned formula (b-3). The base of alkenyl is preferred.

・(b-2’)成份之陰離子部 式(b-2’)中,R304 、R305 各自獨立為可具有取代基之環式基、可具有取代基之鏈狀烷基,或可具有取代基之鏈狀烯基,其分別與前述式(b-2)及前述式(b-3)中,R105 、R107 及R108 中之可具有取代基之環式基、可具有取代基之鏈狀烷基,或可具有取代基之鏈狀烯基為相同之內容等。但,R304 、R305 可相互鍵結而形成環。 R304 、R305 以可具有取代基之鏈狀烷基為佳,以直鏈狀或支鏈狀之烷基,或直鏈狀或支鏈狀之氟化烷基為較佳。 該鏈狀之烷基之碳數,以1~10為佳,更佳為碳數1~7,特佳為碳數1~3。R304 、R305 之鏈狀烷基之碳數,於上述碳數之範圍內時,基於對阻劑用溶劑亦具有良好溶解性等的理由,以越小越佳。又,R304 、R305 之鏈狀烷基中,被氟原子取代的氫原子數越多時,其酸之強度越強,而為更佳。前述鏈狀烷基中的氟原子之比例,即氟化率,較佳為70~100%,更佳為90~100%,最佳為全部的氫原子被氟原子取代之全氟烷基。 式(b-2’)中,V302 、V303 各別獨立為單鍵、伸烷基,或氟化伸烷基,其分別與式(b-1)中之V101 為相同之內容等。 式(b-2’)中,L301 、L302 各別獨立為單鍵或氧原子。・In the anion moiety formula (b-2') of component (b-2'), R 304 and R 305 are each independently a cyclic group that may have a substituent, a chain alkyl group that may have a substituent, or may have The chain alkenyl group of the substituent, which is respectively the cyclic group that may have a substituent in R 105 , R 107 and R 108 in the aforementioned formula (b-2) and the aforementioned formula (b-3), may have a substituent The chain alkyl group, or the chain alkenyl group which may have a substituent are the same. However, R 304 and R 305 may be bonded to each other to form a ring. R 304 and R 305 are preferably chained alkyl groups which may have substituents, more preferably linear or branched chain alkyl groups, or linear or branched chain fluorinated alkyl groups. The chain alkyl group preferably has 1-10 carbon atoms, more preferably 1-7 carbon atoms, and particularly preferably 1-3 carbon atoms. When the carbon numbers of the chained alkyl groups of R 304 and R 305 are within the range of the above-mentioned carbon numbers, the smaller the better, for reasons such as good solubility in solvents for resists, etc. Also, in the chain alkyl groups of R 304 and R 305 , the more hydrogen atoms substituted by fluorine atoms, the stronger the strength of the acid, which is more preferable. The ratio of fluorine atoms in the chain alkyl group, that is, the fluorination rate, is preferably 70-100%, more preferably 90-100%, most preferably a perfluoroalkyl group in which all hydrogen atoms are replaced by fluorine atoms. In formula (b-2'), V 302 and V 303 are each independently a single bond, an alkylene group, or a fluorinated alkylene group, which are the same as V 101 in formula (b-1), etc. . In formula (b-2'), L 301 and L 302 are each independently a single bond or an oxygen atom.

・(b-3’)成份之陰離子部 式(b-3’)中,R306 ~R308 各自獨立為可具有取代基之環式基、可具有取代基之鏈狀烷基,或可具有取代基之鏈狀烯基,其分別與前述式(b-2)及前述式(b-3)中,R105 、R107 及R108 中之可具有取代基之環式基、可具有取代基之鏈狀烷基,或可具有取代基之鏈狀烯基為相同之內容等。 L303 ~L305 各別獨立為單鍵、-CO-或-SO2 -。・In the anion moiety formula (b-3') of component (b-3'), R 306 to R 308 are each independently a cyclic group that may have a substituent, a chain alkyl group that may have a substituent, or may have a substituent The chain alkenyl group of the substituent, which is respectively the cyclic group that may have a substituent in R 105 , R 107 and R 108 in the aforementioned formula (b-2) and the aforementioned formula (b-3), may have a substituent The chain alkyl group, or the chain alkenyl group which may have a substituent are the same. L 303 to L 305 are each independently a single bond, -CO- or -SO 2 -.

{陽離子部} 式(b-1’)、(b-2’)及(b-3’)中,m為1以上之整數,且M’m+ 為m價之鎓陽離子,又以鋶陽離子、錪陽離子為較佳之例示,例如:上述通式(ca-1)~(ca-5)各別表示之有機陽離子等。{Cation part} In the formulas (b-1'), (b-2') and (b-3'), m is an integer of 1 or more, and M' m+ is an onium cation with a valence of m. Odonium cation is a preferable example, for example, organic cations respectively represented by the above-mentioned general formulas (ca-1) to (ca-5).

上述式(ca-1)所表示的較佳之陽離子,具體而言,可列舉如:上述式(ca-1-1)~(ca-1-72)各別表示之陽離子等。Preferable cations represented by the above formula (ca-1) specifically include cations represented by the above formulas (ca-1-1) to (ca-1-72), respectively.

上述式(ca-2)所表示的較佳之陽離子,具體而言,可列舉如:二苯基錪陽離子、雙(4-tert-丁基苯基)錪陽離子等。Specific examples of preferable cations represented by the above formula (ca-2) include diphenyliodonium cations, bis(4-tert-butylphenyl)iodonium cations, and the like.

上述式(ca-3)所表示的較佳之陽離子,具體而言,可列舉如:上述式(ca-3-1)~(ca-3-6)各別表示之陽離子等。Preferable cations represented by the above formula (ca-3) specifically include cations represented by the above formulas (ca-3-1) to (ca-3-6), respectively.

上述式(ca-4)所表示的較佳之陽離子,具體而言,可列舉如:上述式(ca-4-1)~(ca-4-2)各別表示之陽離子等。Preferable cations represented by the above formula (ca-4) specifically include cations represented by the above formulas (ca-4-1) to (ca-4-2), respectively.

上述式(ca-5)所表示的較佳之陽離子,具體而言,可列舉如:上述式(ca-5-1)~(ca-5-3)所表示之陽離子等。Preferable cations represented by the above formula (ca-5) specifically include cations represented by the above formulas (ca-5-1) to (ca-5-3), and the like.

上述之中,陽離子部[(M’m+ )1 m ],又以通式(ca-1)所表示之陽離子為佳,以式(ca-1-1)~(ca-1-72)各別表示之陽離子為較佳。Among the above, the cation part [(M' m+ ) 1 / m ] is preferably the cation represented by the general formula (ca-1), and the formula (ca-1-1)~(ca-1-72) The cations indicated separately are preferred.

本實施形態之阻劑組成物中,(B2)成份,可單獨使用1種亦可、將2種以上合併使用亦可。 阻劑組成物含有(B2)成份時,阻劑組成物中,(B2)成份之含量,相對於(A)成份100質量份,以50質量份以下為佳,以1~40質量份為較佳,以5~30質量份為更佳。 (B2)成份之含量於上述範圍時,含有(B2)成份時可達到充份的效果,而可使各種微影蝕刻特性更良好。In the resist composition of this embodiment, (B2) component may be used individually by 1 type, and may use it in combination of 2 or more types. When the resist composition contains component (B2), the content of component (B2) in the resist composition is preferably less than 50 parts by mass, more preferably 1 to 40 parts by mass, relative to 100 parts by mass of component (A) Good, more preferably 5-30 parts by mass. When the content of the component (B2) is within the above range, sufficient effects can be achieved when the component (B2) is contained, and various lithographic etching properties can be improved.

<其他成份> 本實施形態之阻劑組成物,除上述(A)成份及(B)成份以外,可再含有該(A)成份及(B)成份以外的其他成份。其他成份,例如以下所示之(D)成份、(E)成份、(F)成份、(S)成份等。<Other ingredients> The resist composition of this embodiment may further contain other components other than the above-mentioned (A) component and (B) component. Other components, such as (D) component, (E) component, (F) component, (S) component etc. shown below.

≪酸擴散控制劑成份(D)≫ 本實施形態之阻劑組成物中,除(A)成份以外,或(A)成份及(B)成份以外,可再含有酸擴散控制劑成份(以下,亦稱為「(D)成份」)。(D)成份,於阻劑組成物中,為具有捕集因曝光所發生的酸之抑制劑(酸擴散控制劑)作用者。 (D)成份,可為經由曝光而分解而喪失酸擴散控制性的光崩解性鹼(D1)(以下,亦稱為「(D1)成份」)、不相當於該(D1)成份的含氮有機化合物(D2)(以下,亦稱為「(D2)成份」)亦可。≪Acid diffusion control agent component (D)≫ In the resist composition of this embodiment, in addition to (A) component, or (A) component and (B) component, an acid diffusion control agent component (hereinafter, also referred to as "(D) component") may be contained . Component (D) has an inhibitor (acid diffusion control agent) function of trapping acid generated by exposure in the resist composition. Component (D) may be a photodisintegrating base (D1) (hereinafter, also referred to as "component (D1)") that is decomposed by exposure and loses acid diffusion controllability. A nitrogen organic compound (D2) (hereinafter also referred to as "(D2) component") may also be used.

・(D1)成份 含有(D1)成份的阻劑組成物,於形成阻劑圖型之際,可提高阻劑膜的曝光部與未曝光部之對比。 (D1)成份,只要為經由曝光而分解而喪失酸擴散控制性之成份時,並未有特別之限定,又以由下述通式(d1-1)所表示之化合物(以下,亦稱為「(d1-1)成份」)、下述通式(d1-2)所表示之化合物(以下,亦稱為「(d1-2)成份」)及下述通式(d1-3)所表示之化合物(以下,亦稱為「(d1-3)成份」)所成之群所選出的1種以上之化合物為佳。 (d1-1)~(d1-3)成份,於阻劑膜的曝光部中,並不具有因分解而喪失酸擴散控制性(鹼性)的抑制劑之作用,而於未曝光部中具有作為抑制劑之作用。・(D1) Component The resist composition containing the component (D1) can improve the contrast between the exposed part and the unexposed part of the resist film when the resist pattern is formed. The component (D1) is not particularly limited as long as it is a component decomposed by exposure to lose acid diffusion controllability, and a compound represented by the following general formula (d1-1) (hereinafter also referred to as "(d1-1) component"), a compound represented by the following general formula (d1-2) (hereinafter also referred to as "(d1-2) component"), and a compound represented by the following general formula (d1-3) One or more compounds selected from the group consisting of compounds (hereinafter, also referred to as "(d1-3) component") are preferred. The components (d1-1) to (d1-3) do not act as inhibitors for the loss of acid diffusion control (alkalinity) due to decomposition in the exposed part of the resist film, but have an inhibitory effect in the unexposed part function as an inhibitor.

Figure 02_image141
[式中,Rd1 ~Rd4 為可具有取代基之環式基、可具有取代基之鏈狀烷基,或可具有取代基之鏈狀烯基。其中,式(d1-2)中之Rd2 中,S原子鄰接的碳原子為不鍵結氟原子者。Yd1 為單鍵或2價之連結基;m為1以上之整數,且Mm+ 各別獨立為m價之有機陽離子]。
Figure 02_image141
[In the formula, Rd 1 to Rd 4 are a cyclic group that may have a substituent, a chain alkyl group that may have a substituent, or a chain alkenyl group that may have a substituent. Among them, in Rd 2 in the formula (d1-2), the carbon atom adjacent to the S atom is not bonded to a fluorine atom. Yd 1 is a single bond or a divalent linking group; m is an integer of 1 or more, and M m+ are each independently an m-valent organic cation].

{(d1-1)成份} ・・陰離子部 式(d1-1)中,Rd1 為可具有取代基之環式基、可具有取代基之鏈狀烷基,或可具有取代基之鏈狀烯基,其分別與前述式(b-1)中之R101 為相同之內容等。 該些之中,Rd1 又以可具有取代基的芳香族烴基、可具有取代基之脂肪族環式基,或可具有取代基之鏈狀烷基為佳。該些之基所可具有的取代基,可列舉如:羥基、側氧(oxo)基、烷基、芳基、氟原子、氟化烷基、上述通式(a2-r-1)~(a2-r-7)各別表示之含內酯之環式基、醚鍵結、酯鍵結,或該些之組合等。含有作為取代基之醚鍵結或酯鍵結時,其鏈中可介有伸烷基,該情形之取代基,又以上述式(y-al-1)~(y-al-5)各別表示之連結基為佳。 前述芳香族烴基,以苯基或萘基為較佳。 前述脂肪族環式基,以由金剛烷、降莰烷、異莰烷、三環癸烷、四環十二烷等的多環鏈烷去除1個以上的氫原子而得之基為較佳。 前述鏈狀之烷基,以碳數為1~10為佳,具體而言,可列舉如:甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、壬基、癸基等之直鏈狀之烷基;1-甲基乙基、1-甲基丙基、2-甲基丙基、1-甲基丁基、2-甲基丁基、3-甲基丁基、1-乙基丁基、2-乙基丁基、1-甲基戊基、2-甲基戊基、3-甲基戊基、4-甲基戊基等之支鏈狀之烷基等。{(d1-1) component} ・・In the anion part formula (d1-1), Rd 1 is a cyclic group that may have a substituent, a chain alkyl group that may have a substituent, or a chain group that may have a substituent Alkenyl, which are respectively the same as R 101 in the aforementioned formula (b-1), etc. Among them, Rd 1 is preferably an aromatic hydrocarbon group which may have a substituent, an aliphatic ring group which may have a substituent, or a chain alkyl group which may have a substituent. The substituents that these groups may have include, for example: hydroxyl group, side oxygen (oxo) group, alkyl group, aryl group, fluorine atom, fluorinated alkyl group, the above-mentioned general formula (a2-r-1)~( a2-r-7) Each represents a lactone-containing cyclic group, an ether linkage, an ester linkage, or a combination thereof. When containing an ether bond or an ester bond as a substituent, an alkylene group may be interposed in the chain, and the substituent in this case is represented by each of the above formulas (y-al-1) to (y-al-5). It is better not to express the link base. The aforementioned aromatic hydrocarbon group is preferably phenyl or naphthyl. The aforementioned aliphatic cyclic group is preferably a group obtained by removing one or more hydrogen atoms from polycyclic alkanes such as adamantane, norbornane, isobornane, tricyclodecane, and tetracyclododecane. . The aforementioned chain-like alkyl group preferably has 1 to 10 carbon atoms, specifically, methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl , decyl and other linear alkyl groups; 1-methylethyl, 1-methylpropyl, 2-methylpropyl, 1-methylbutyl, 2-methylbutyl, 3-methyl Branched chains of butyl, 1-ethylbutyl, 2-ethylbutyl, 1-methylpentyl, 2-methylpentyl, 3-methylpentyl, 4-methylpentyl, etc. The alkyl group, etc.

前述鏈狀之烷基為具有作為取代基的氟原子或氟化烷基之氟化烷基時,氟化烷基之碳數,以1~11為佳,以碳數1~8為較佳,以碳數1~4為更佳。該氟化烷基,可含有氟原子以外的原子。氟原子以外的原子,例如:氧原子、硫原子、氮原子等。 Rd1 ,以構成直鏈狀之烷基的一部份或全部的氫原子被氟原子取代而得之氟化烷基為佳,以構成直鏈狀之烷基的全部氫原子被氟原子取代而得之氟化烷基(直鏈狀之全氟烷基)為特佳。When the aforementioned chained alkyl group is a fluorinated alkyl group having a fluorine atom as a substituent or a fluorinated alkyl group, the carbon number of the fluorinated alkyl group is preferably 1 to 11, and more preferably 1 to 8 carbons. , with 1 to 4 carbon atoms being more preferred. The fluorinated alkyl group may contain atoms other than fluorine atoms. Atoms other than fluorine atoms, such as oxygen atoms, sulfur atoms, nitrogen atoms, etc. Rd 1 is preferably a fluorinated alkyl group in which part or all of the hydrogen atoms constituting a straight-chain alkyl group are replaced by fluorine atoms, and all the hydrogen atoms constituting a straight-chain alkyl group are replaced by fluorine atoms The obtained fluorinated alkyl group (linear perfluoroalkyl group) is particularly preferred.

以下為(d1-1)成份之陰離子部的較佳具體例示。The following are preferable specific examples of the anion portion of the component (d1-1).

Figure 02_image143
Figure 02_image143

・・陽離子部 式(d1-1)中,Mm+ 為m價之有機陽離子。 Mm+ 之有機陽離子,以與前述通式(ca-1)~(ca-5)各別表示之陽離子為相同之內容者為較佳之例示,又以前述通式(ca-1)所表示之陽離子為較佳,以前述式(ca-1-1)~(ca-1-72)各別表示之陽離子為更佳。 (d1-1)成份,可單獨使用1種亦可、將2種以上組合使用亦可。・・In the cationic formula (d1-1), M m+ is an m-valent organic cation. The organic cations of M m+ are preferably exemplified with the same content as the cations respectively represented by the aforementioned general formulas (ca-1) to (ca-5), and those represented by the aforementioned general formula (ca-1) A cation is preferable, and a cation represented by each of the aforementioned formulas (ca-1-1) to (ca-1-72) is more preferable. The component (d1-1) may be used alone or in combination of two or more.

{(d1-2)成份} ・・陰離子部 式(d1-2)中,Rd2 為可具有取代基之環式基、可具有取代基之鏈狀烷基,或可具有取代基之鏈狀烯基,可列舉如:與前述式(b-1)中之R101 為相同之內容等。 但,Rd2 中,S原子鄰接的碳原子為不鍵結氟原子(未被氟取代)者。如此,可使(d1-2)成份之陰離子形成具有適度弱酸之陰離子,而可提高作為(D)成份之抑制能力。 Rd2 ,以可具有取代基之鏈狀烷基,或可具有取代基之脂肪族環式基為佳。鏈狀之烷基,以碳數1~10為佳,以3~10為較佳。脂肪族之環式基,以由金剛烷、降莰烷、異莰烷、三環癸烷、四環十二烷等去除1個以上的氫原子而得之基(可具有取代基);由樟腦等去除1個以上的氫原子而得之基為較佳。 Rd2 之烴基可具有取代基,該取代基,可列舉如:與前述式(d1-1)的Rd1 中之烴基(芳香族烴基、脂肪族環式基、鏈狀之烷基)可具有的取代基為相同之內容等。{(d1-2) component} ・・In the anion moiety formula (d1-2), Rd 2 is a cyclic group that may have a substituent, a chain alkyl group that may have a substituent, or a chain-like group that may have a substituent Examples of the alkenyl group include the same content as R 101 in the aforementioned formula (b-1), and the like. However, in Rd 2 , the carbon atom adjacent to the S atom is not bonded to a fluorine atom (not substituted by fluorine). In this way, the anion of the (d1-2) component can be formed into an anion with a moderately weak acid, and the inhibitory ability as the (D) component can be improved. Rd 2 is preferably a chain alkyl group which may have a substituent, or an aliphatic ring group which may have a substituent. The chain alkyl group preferably has 1-10 carbon atoms, more preferably 3-10 carbon atoms. Aliphatic cyclic groups are those obtained by removing one or more hydrogen atoms from adamantane, norbornane, isobornane, tricyclodecane, tetracyclododecane, etc. (may have substituents); A group obtained by removing one or more hydrogen atoms such as camphor is preferable. The hydrocarbon group of Rd 2 may have a substituent , and the substituent, for example, may have The substituents are the same content and so on.

以下為(d1-2)成份之陰離子部的較佳具體例示。The following are preferable specific examples of the anion part of the (d1-2) component.

Figure 02_image145
Figure 02_image145

・・陽離子部 式(d1-2)中,Mm+ 為m價之有機陽離子,其為與前述式(d1-1)中之Mm+ 為相同之內容。 (d1-2)成份,可單獨使用1種亦可、將2種以上組合使用亦可。・・In the cationic formula (d1-2), M m+ is an m-valent organic cation, which is the same as M m+ in the aforementioned formula (d1-1). (d1-2) component may be used individually by 1 type, and may use it in combination of 2 or more types.

{(d1-3)成份} ・・陰離子部 式(d1-3)中,Rd3 為可具有取代基之環式基、可具有取代基之鏈狀烷基,或可具有取代基之鏈狀烯基,可列舉如:與前述式(b-1)中之R101 為相同之內容等,又以含有氟原子之環式基、鏈狀之烷基,或鏈狀之烯基為佳。其中又以氟化烷基為佳,以與前述Rd1 之氟化烷基為相同之內容為較佳。{(d1-3) component} ・・In the anion moiety formula (d1-3), Rd 3 is a cyclic group that may have a substituent, a chain alkyl group that may have a substituent, or a chain-like group that may have a substituent The alkenyl group includes, for example, the same content as R 101 in the aforementioned formula (b-1), etc., and is preferably a cyclic group containing a fluorine atom, a chained alkyl group, or a chained alkenyl group. Among them, the fluorinated alkyl group is preferred, and the same content as the aforementioned fluorinated alkyl group of Rd 1 is preferred.

式(d1-3)中,Rd4 為可具有取代基之環式基、可具有取代基之鏈狀烷基,或可具有取代基之鏈狀烯基,可列舉如:與前述式(b-1)中之R101 為相同之內容等。 其中,又以可具有取代基之烷基、烷氧基、烯基、環式基為佳。 Rd4 中之烷基,以碳數1~5的直鏈狀或支鏈狀之烷基為佳,具體而言,可列舉如:甲基、乙基、丙基、異丙基、n-丁基、異丁基、tert-丁基、戊基、異戊基、新戊基等。Rd4 之烷基的氫原子中之一部份可被羥基、氰基等所取代。 Rd4 中之烷氧基,以碳數1~5之烷氧基為佳,碳數1~5之烷氧基,具體而言,可列舉如:甲氧基、乙氧基、n-丙氧基、iso-丙氧基、n-丁氧基、tert-丁氧基等。其中,又以甲氧基、乙氧基為佳。In the formula (d1-3), Rd 4 is a cyclic group that may have a substituent, a chain alkyl group that may have a substituent, or a chain alkenyl group that may have a substituent, such as: and the aforementioned formula (b R 101 in -1) has the same content and so on. Among them, an alkyl group, an alkoxy group, an alkenyl group, and a cyclic group which may have a substituent are preferable. The alkyl group in Rd 4 is preferably a straight-chain or branched-chain alkyl group with 1 to 5 carbon atoms, specifically, methyl, ethyl, propyl, isopropyl, n- Butyl, isobutyl, tert-butyl, pentyl, isopentyl, neopentyl, etc. Part of hydrogen atoms in the alkyl group of Rd 4 may be substituted by hydroxyl, cyano, etc. The alkoxy group in Rd 4 is preferably an alkoxy group with 1 to 5 carbons, specifically, alkoxy groups with 1 to 5 carbons, such as: methoxy, ethoxy, n-propane Oxy, iso-propoxy, n-butoxy, tert-butoxy, etc. Among them, methoxy and ethoxy are preferred.

Rd4 中之烯基,可列舉如:與上述式(b-1)中之R101 為相同之內容,又以乙烯基、丙烯基(烯丙基)、1-甲基丙烯基、2-甲基丙烯基為佳。該些之基再具有取代基時,可具有碳數1~5之烷基或碳數1~5之鹵化烷基。The alkenyl in Rd 4 can be enumerated such as: the same content as R 101 in the above-mentioned formula (b-1), and vinyl, propenyl (allyl), 1-methacryl, 2- Methacryl is preferred. When these groups have a substituent, they may have an alkyl group having 1 to 5 carbons or a halogenated alkyl group having 1 to 5 carbons.

Rd4 中之環式基,可列舉如:與上述式(b-1)中之R101 為相同之內容,其中又以由環戊烷、環己烷、金剛烷、降莰烷、異莰烷、三環癸烷、四環十二烷等的環鏈烷去除1個以上的氫原子而得之脂環式基,或苯基、萘基等之芳香族基為佳。The cyclic group in Rd 4 can be enumerated such as: the same content as R 101 in the above-mentioned formula (b-1), wherein it is composed of cyclopentane, cyclohexane, adamantane, norbornane, and isocamphene Alicyclic groups obtained by removing one or more hydrogen atoms from cycloalkanes such as alkane, tricyclodecane, and tetracyclododecane, or aromatic groups such as phenyl and naphthyl are preferred.

式(d1-3)中,Yd1 為單鍵或2價之連結基。 Yd1 中的2價之連結基,並未有特別之限定,可列舉如:可具有取代基的2價之烴基(脂肪族烴基、芳香族烴基)、含有雜原子的2價之連結基等。該些分別與上述式(a2-1)中之Ya21 中的2價之連結基的說明中所列舉的可具有取代基的2價之烴基、含有雜原子的2價之連結基為相同之內容等。 Yd1 以羰基、酯鍵結、醯胺鍵結、伸烷基或該些之組合為佳。伸烷基,以直鏈狀或支鏈狀之伸烷基為較佳,以伸甲基或伸乙基為更佳。In the formula (d1-3), Yd 1 is a single bond or a divalent linking group. The divalent linking group in Yd1 is not particularly limited, and examples thereof include divalent hydrocarbon groups (aliphatic hydrocarbon groups, aromatic hydrocarbon groups) that may have substituents, divalent linking groups containing heteroatoms, etc. . These are the same as the bivalent hydrocarbon group that may have a substituent and the divalent linking group containing a heteroatom listed in the description of the bivalent linking group in Ya 21 in the above formula (a2-1), respectively. content etc. Yd 1 is preferably a carbonyl group, an ester bond, an amide bond, an alkylene group or a combination thereof. The alkylene group is preferably a linear or branched chain alkylene group, more preferably a methylene group or an ethylene group.

以下為(d1-3)成份之陰離子部的較佳具體例示。The following are preferable specific examples of the anion part of the (d1-3) component.

Figure 02_image147
Figure 02_image147

Figure 02_image149
Figure 02_image149

・・陽離子部 式(d1-3)中,Mm+ 為m價之有機陽離子,其為與前述式(d1-1)中之Mm+ 為相同之內容。 (d1-3)成份,可單獨使用1種亦可、將2種以上組合使用亦可。・・In the cation part formula (d1-3), M m+ is an m-valent organic cation, which is the same as M m+ in the aforementioned formula (d1-1). The components (d1-3) may be used alone or in combination of two or more.

(D1)成份可僅使用上述(d1-1)~(d1-3)成份之任一種,或將2種以上組合使用皆可。 阻劑組成物含有(D1)成份時,(D1)成份之含量,相對於(A)成份100質量份,以0.01~50質量份為佳,以0.05~40質量份為較佳,以0.1~30質量份為更佳。 (D1)成份之含量於上述較佳範圍的下限值以上時,特別是容易得到良好的微影蝕刻特性及阻劑圖型形狀。另一方面,(D1)成份之含量於上述較佳範圍的上限值以下時,可取得與其他成份之平衡,而可容易地形成良好的各種微影蝕刻特性。(D1) As a component, only any one of the said (d1-1)-(d1-3) components may be used, or 2 or more types may be used in combination. When the resist composition contains component (D1), the content of component (D1) is preferably 0.01-50 parts by mass, more preferably 0.05-40 parts by mass, and 0.1-40 parts by mass relative to 100 parts by mass of component (A). 30 parts by mass is better. When the content of the component (D1) is more than the lower limit of the above-mentioned preferable range, it is easy to obtain good lithographic etching characteristics and resist pattern shape. On the other hand, when the content of the component (D1) is below the upper limit of the above-mentioned preferred range, a balance with other components can be achieved, and various favorable lithographic etching properties can be easily formed.

(D1)成份之製造方法: 前述(d1-1)成份、(d1-2)成份之製造方法,並未有特別之限定,其可依公知之方法而製得。 又,(d1-3)成份之製造方法,並未有特別之限定,例如:可依與US2012-0149916號公報記載之相同方法予以製得。(D1) Manufacturing method of ingredients: There is no particular limitation on the production method of the above-mentioned (d1-1) component and (d1-2) component, which can be produced according to known methods. Also, the method for producing the component (d1-3) is not particularly limited, for example, it can be produced by the same method as described in US2012-0149916.

・(D2)成份 酸擴散控制劑成份,可含有不相當於上述(D1)成份的含氮有機化合物成份(以下,亦稱為「(D2)成份」)。 (D2)成份只要為具有作為酸擴散控制劑之作用,且,不相當於(D1)成份者時,並未有特別之限定,其可任意地使用公知之成份。其中,又以脂肪族胺為佳,該些之中,特別是以二級脂肪族胺或三級脂肪族胺為較佳。 脂肪族胺,為具有1個以上的脂肪族基之胺,該脂肪族基又以碳數1~12為佳。 脂肪族胺,可列舉如:氨NH3 中的至少1個氫原子,被碳數12以下之烷基或羥烷基取代而得之胺(烷胺或烷醇胺)或環式胺等。 烷胺及烷醇胺之具體例,可列舉如:n-己胺、n-庚胺、n-辛胺、n-壬胺、n-癸胺等的單烷胺;二乙胺、二-n-丙胺、二-n-庚胺、二-n-辛胺、二環己胺等的二烷胺;三甲胺、三乙胺、三-n-丙胺、三-n-丁胺、三-n-戊胺、三-n-己胺、三-n-庚胺、三-n-辛胺、三-n-壬胺、三-n-癸胺、三-n-十二烷胺等的三烷胺;二乙醇胺、三乙醇胺、二異丙醇胺、三異丙醇胺、二-n-辛醇胺、三-n-辛醇胺等之烷醇胺等。該些之中,又以碳數5~10之三烷胺為更佳,以三-n-戊胺或三-n-辛胺為特佳。・The component (D2) of the acid diffusion control agent may contain a nitrogen-containing organic compound component (hereinafter also referred to as "(D2) component") that does not correspond to the above-mentioned component (D1). The component (D2) is not particularly limited as long as it functions as an acid diffusion control agent and does not correspond to the component (D1), and any known component can be used. Among them, aliphatic amines are preferred, and among them, secondary aliphatic amines or tertiary aliphatic amines are particularly preferred. The aliphatic amine is an amine having one or more aliphatic groups, and the aliphatic groups preferably have 1 to 12 carbon atoms. Aliphatic amines include, for example, at least one hydrogen atom in ammonia NH 3 , amines (alkylamines or alkanolamines) or cyclic amines substituted by alkyl or hydroxyalkyl groups with 12 or less carbon atoms. Specific examples of alkylamines and alkanolamines include monoalkylamines such as n-hexylamine, n-heptylamine, n-octylamine, n-nonylamine, and n-decylamine; diethylamine, di- Dialkylamines such as n-propylamine, di-n-heptylamine, di-n-octylamine, dicyclohexylamine, etc.; trimethylamine, triethylamine, tri-n-propylamine, tri-n-butylamine, tri- n-pentylamine, tri-n-hexylamine, tri-n-heptylamine, tri-n-octylamine, tri-n-nonylamine, tri-n-decylamine, tri-n-dodecylamine, etc. Trialkylamine; alkanolamine such as diethanolamine, triethanolamine, diisopropanolamine, triisopropanolamine, di-n-octanolamine, tri-n-octanolamine, etc. Among these, trialkylamine having 5 to 10 carbon atoms is more preferable, and tri-n-pentylamine or tri-n-octylamine is particularly preferable.

環式胺,可列舉如:含有作為雜原子的氮原子之雜環化合物等。該雜環化合物可為單環式者(脂肪族單環式胺)亦可、多環式者(脂肪族多環式胺)亦可。 脂肪族單環式胺,具體而言,可列舉如:哌啶、哌嗪等。 脂肪族多環式胺,以碳數6~10者為佳,具體而言,可列舉如:1,5-二氮雜雙環[4.3.0]-5-壬烯、1,8-二氮雜雙環[5.4.0]-7-十一烯、六甲基四胺、1,4-二氮雜雙環[2.2.2]辛烷等。As a cyclic amine, a heterocyclic compound etc. which contain a nitrogen atom as a heteroatom are mentioned, for example. This heterocyclic compound may be monocyclic (aliphatic monocyclic amine) or polycyclic (aliphatic polycyclic amine). As aliphatic monocyclic amine, specifically, piperidine, piperazine, etc. are mentioned, for example. Aliphatic polycyclic amines are preferably those with 6 to 10 carbon atoms. Specifically, examples include: 1,5-diazabicyclo[4.3.0]-5-nonene, 1,8-diaza Heterobicyclo[5.4.0]-7-undecene, hexamethyltetramine, 1,4-diazabicyclo[2.2.2]octane, etc.

其他的脂肪族胺,可列舉如:三(2-甲氧基甲氧基乙基)胺、三{2-(2-甲氧基乙氧基)乙基}胺、三{2-(2-甲氧基乙氧基甲氧基)乙基}胺、三{2-(1-甲氧基乙氧基)乙基}胺、三{2-(1-乙氧基乙氧基)乙基}胺、三{2-(1-乙氧基丙氧基)乙基}胺、三[2-{2-(2-羥基乙氧基)乙氧基}乙基]胺、三乙醇胺三乙酸酯等,又以三乙醇胺三乙酸酯為佳。Other aliphatic amines, such as: three (2-methoxymethoxyethyl) amine, three {2- (2-methoxyethoxy) ethyl} amine, three {2-(2 -Methoxyethoxymethoxy)ethyl}amine, tri{2-(1-methoxyethoxy)ethyl}amine, tri{2-(1-ethoxyethoxy)ethyl Base}amine, tri{2-(1-ethoxypropoxy)ethyl}amine, tris[2-{2-(2-hydroxyethoxy)ethoxy}ethyl]amine, triethanolamine Acetate, etc., preferably triethanolamine triacetate.

又,(D2)成份亦可使用芳香族胺。 芳香族胺,可列舉如:4-二甲胺基吡啶、吡咯、吲哚、吡唑、咪唑或該些之衍生物、三苄胺、2,6-二異丙基苯胺、N-tert-丁氧基羰基吡咯啶等。Moreover, aromatic amine can also be used for (D2) component. Aromatic amines, such as: 4-dimethylaminopyridine, pyrrole, indole, pyrazole, imidazole or their derivatives, tribenzylamine, 2,6-diisopropylaniline, N-tert- Butoxycarbonylpyrrolidine, etc.

(D2)成份,可單獨使用亦可、將2種以上組合使用亦可。 阻劑組成物含有(D2)成份時,(D2)成份相對於(A)成份100質量份,通常為使用0.01~5質量份之範圍。於上述範圍時,可取得與其他成份之平衡,而可使各種微影蝕刻特性更良好。(D2) The component may be used individually or in combination of 2 or more types. When the resist composition contains (D2) component, (D2) component is normally used in the range of 0.01-5 mass parts with respect to 100 mass parts of (A) components. When it is in the above range, the balance with other components can be achieved, and various lithographic etching properties can be improved.

≪由有機羧酸,及磷之含氧酸及其衍生物所成之群所選出之至少1種的化合物(E)≫ 本實施形態之阻劑組成物中,就防止感度劣,或提高阻劑圖型形狀、處理時的存放安定性( temporal stability)等目的,可含有任意成份之由有機羧酸,及磷之含氧酸及其衍生物所成之群所選出之至少1種的化合物(E)(以下,亦稱為「(E)成份」)。 有機羧酸,例如:以乙酸、丙二酸、枸椽酸、蘋果酸、琥珀酸、安息香酸、水楊酸等為佳。 磷之含氧酸,可列舉如:磷酸、膦酸(phosphonic acid)、次膦酸(phosphine acid)等,該些之中,特別是以膦酸為佳。 磷之含氧酸的衍生物,可列舉如:上述含氧酸的氫原子被烴基取代而得之酯等,前述之烴基,可列舉如:碳數1~5之烷基、碳數6~15之芳基等。 磷酸之衍生物,可列舉如:磷酸二-n-丁酯、磷酸二苯酯等的磷酸酯等。 膦酸的衍生物,可列舉如:膦酸二甲酯、膦酸-二-n-丁酯、膦酸苯酯、膦酸二苯酯、膦酸二苄酯等的膦酸酯等。 次膦酸的衍生物,可列舉如:次膦酸酯或次膦酸苯酯等。 (E)成份,可單獨使用1種亦可、將2種以上合併使用亦可。 阻劑組成物含有(E)成份時,(E)成份相對於(A)成份100質量份,通常為使用0.01~5質量份之範圍。≪At least one compound (E) selected from the group consisting of organic carboxylic acids, phosphorus oxyacids and their derivatives≫ In the resist composition of this embodiment, for the purpose of preventing poor sensitivity, or improving resist pattern shape, storage stability (temporal stability) during processing, etc., organic carboxylic acid and phosphorus content may be contained as optional components. At least one compound (E) selected from the group consisting of oxyacids and their derivatives (hereinafter also referred to as "component (E)"). Organic carboxylic acids, for example: acetic acid, malonic acid, citrate, malic acid, succinic acid, benzoic acid, salicylic acid, etc. are preferred. Phosphorus oxyacids include, for example, phosphoric acid, phosphonic acid, and phosphine acid, among which phosphonic acid is particularly preferred. Derivatives of oxyacids of phosphorus include, for example, esters obtained by replacing the hydrogen atoms of the above-mentioned oxyacids with hydrocarbon groups. 15 Aryl, etc. Derivatives of phosphoric acid include, for example, phosphoric acid esters such as di-n-butyl phosphate and diphenyl phosphate. Examples of derivatives of phosphonic acid include phosphonate esters such as dimethyl phosphonate, di-n-butyl phosphonate, phenyl phosphonate, diphenyl phosphonate, and dibenzyl phosphonate. As a derivative of phosphinic acid, a phosphinic acid ester, phenyl phosphinic acid, etc. are mentioned, for example. (E) The component may be used individually by 1 type, and may use it in combination of 2 or more types. When the resist composition contains (E) component, (E) component is normally used in the range of 0.01-5 mass parts with respect to 100 mass parts of (A) components.

≪氟添加劑成份(F)≫ 本實施形態之阻劑組成物,就對阻劑膜賦予撥水性,或提高微影蝕刻特性等目的時,可含有氟添加劑成份(以下,亦稱為「(F)成份」)。 (F)成份,例如:可使用特開2010-002870號公報、特開2010-032994號公報、特開2010-277043號公報、特開2011-13569號公報、特開2011-128226號公報記載的含氟高分子化合物。 (F)成份,更具體而言,可列舉如:具有下述式(f1-1)所表示的結構單位(f1)的聚合物等。前述聚合物,更具體而言,例如:以僅由下述式(f1-1)所表示的結構單位(f1)所形成的聚合物(均聚物);含有經由酸之作用而使極性增大之酸分解性基的結構單位(a1)與該結構單位(f1)之共聚物;該結構單位(f1),與由丙烯酸或甲基丙烯酸所衍生的結構單位,與前述結構單位(a1)之共聚物為佳。其中,可與該結構單位(f1)共聚的前述結構單位(a1)中之較佳者,可列舉如:由1-乙基-1-環辛基(甲基)丙烯酸酯所衍生的結構單位、由1-甲基-1-金剛烷基(甲基)丙烯酸酯所衍生的結構單位等。≪Fluorine additive component (F)≫ The resist composition of this embodiment may contain a fluorine additive component (hereinafter also referred to as "component (F)") for the purpose of imparting water repellency to the resist film or improving lithographic etching characteristics. (F) Components, for example: those recorded in JP 2010-002870, JP 2010-032994, JP 2010-277043, JP 2011-13569, JP 2011-128226 can be used Fluorine-containing polymer compounds. (F) As a component, the polymer etc. which have the structural unit (f1) represented by following formula (f1-1) more specifically are mentioned, for example. The above-mentioned polymer, more specifically, for example: a polymer (homopolymer) formed only by the structural unit (f1) represented by the following formula (f1-1); A copolymer of a structural unit (a1) having a large acid-decomposable group and the structural unit (f1); the structural unit (f1), a structural unit derived from acrylic acid or methacrylic acid, and the aforementioned structural unit (a1) Copolymers are preferred. Among them, preferred ones of the aforementioned structural units (a1) that can be copolymerized with the structural unit (f1) include, for example, structural units derived from 1-ethyl-1-cyclooctyl (meth)acrylate , a structural unit derived from 1-methyl-1-adamantyl (meth)acrylate, and the like.

Figure 02_image151
[式中,R與前述為相同之內容,Rf102 及Rf103 各別獨立表示氫原子、鹵素原子、碳數1~5之烷基或碳數1~5之鹵化烷基;Rf102 及Rf103 可為相同亦可、相異亦可。nf1 為1~5之整數,Rf101 為含有氟原子之有機基]。
Figure 02_image151
[In the formula, R is the same as the above, and Rf 102 and Rf 103 independently represent a hydrogen atom, a halogen atom, an alkyl group with 1 to 5 carbons, or a halogenated alkyl group with 1 to 5 carbons; Rf 102 and Rf 103 may be the same or different. nf 1 is an integer of 1 to 5, and Rf 101 is an organic group containing fluorine atoms].

式(f1-1)中,α位的碳原子鍵結之R,與前述為相同之內容。又,R以氫原子或甲基為佳。 式(f1-1)中,Rf102 及Rf103 之鹵素原子,可列舉如:氟原子、氯原子、溴原子、碘原子等,特別是以氟原子為佳。Rf102 及Rf103 之碳數1~5之烷基,例如:與上述R的碳數1~5之烷基為相同之內容,又以甲基或乙基為佳。Rf102 及Rf103 的碳數1~5之鹵化烷基,具體而言,可列舉如:碳數1~5之烷基的氫原子之一部份或全部,被鹵素原子取代而得之基等。 該鹵素原子,可列舉如:氟原子、氯原子、溴原子、碘原子等,特別是以氟原子為佳。其中,Rf102 及Rf103 又以氫原子、氟原子,或碳數1~5之烷基為佳,以氫原子、氟原子、甲基,或乙基為佳。 式(f1-1)中,nf1 為1~5之整數,又以1~3之整數為佳,以1或2為較佳。In the formula (f1-1), R to which the carbon atom at the α position is bonded is the same as described above. Also, R is preferably a hydrogen atom or a methyl group. In the formula (f1-1), the halogen atoms of Rf 102 and Rf 103 include, for example, fluorine atoms, chlorine atoms, bromine atoms, iodine atoms, etc., especially fluorine atoms are preferred. The alkyl group having 1 to 5 carbon atoms in Rf 102 and Rf 103 is, for example, the same as the alkyl group having 1 to 5 carbon atoms in R above, and preferably methyl or ethyl. The halogenated alkyl groups of Rf 102 and Rf 103 having 1 to 5 carbon atoms, specifically, a group obtained by substituting a part or all of the hydrogen atoms of an alkyl group having 1 to 5 carbon atoms with a halogen atom wait. The halogen atom includes, for example, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, etc., and a fluorine atom is particularly preferable. Among them, Rf 102 and Rf 103 are preferably hydrogen atoms, fluorine atoms, or alkyl groups with 1 to 5 carbon atoms, preferably hydrogen atoms, fluorine atoms, methyl groups, or ethyl groups. In the formula (f1-1), nf 1 is an integer of 1 to 5, preferably an integer of 1 to 3, more preferably 1 or 2.

式(f1-1)中,Rf101 為含有氟原子之有機基,又以含有氟原子之烴基為佳。 含有氟原子之烴基,可為直鏈狀、支鏈狀或環狀之任一者皆可,又以碳數1~20為佳,以碳數1~15為較佳,以碳數1~10為特佳。 又,含有氟原子之烴基,以該烴基中的25%以上之氫原子被氟化者為佳,以50%以上被氟化者為較佳,又以60%以上被氟化時,可提高浸漬曝光時的阻劑膜之疏水性,而為特佳。 其中,Rf101 又以碳數1~6之氟化烴基為較佳,以三氟甲基、-CH2 -CF3 、-CH2 -CF2 -CF3 、-CH(CF3 )2 、-CH2 -CH2 -CF3 、 -CH2 -CH2 -CF2 -CF2 -CF2 -CF3 為特佳。In formula (f1-1), Rf 101 is an organic group containing fluorine atoms, preferably a hydrocarbon group containing fluorine atoms. The hydrocarbon group containing fluorine atoms can be any of linear, branched or cyclic, and preferably has 1 to 20 carbons, more preferably 1 to 15 carbons, and 1 to 15 carbons. 10 is excellent. In addition, the hydrocarbyl group containing fluorine atoms is preferably fluorinated with more than 25% of the hydrogen atoms in the hydrocarbyl group, preferably more than 50% is fluorinated, and when more than 60% is fluorinated, it can improve The hydrophobicity of the resist film during immersion exposure is particularly good. Among them, Rf 101 is preferably a fluorinated hydrocarbon group with 1 to 6 carbons, trifluoromethyl, -CH 2 -CF 3 , -CH 2 -CF 2 -CF 3 , -CH(CF 3 ) 2 , -CH 2 -CH 2 -CF 3 and -CH 2 -CH 2 -CF 2 -CF 2 -CF 2 -CF 3 are particularly preferred.

(F)成份之重量平均分子量(Mw)(凝膠滲透層析之聚苯乙烯換算基準),以1000~50000為佳,以5000~40000為較佳,以10000~30000為最佳。於該範圍的上限值以下時,作為阻劑使用時,可對阻劑用溶劑具有充份的溶解性,於該範圍的下限值以上時,可於阻劑表面產生良好的撥水性。 (F)成份之分散度(Mw/Mn),以1.0~5.0為佳,以1.0~3.0為較佳,以1.2~2.5為最佳。(F) The weight average molecular weight (Mw) of the component (in terms of polystyrene in gel permeation chromatography) is preferably from 1,000 to 50,000, more preferably from 5,000 to 40,000, most preferably from 10,000 to 30,000. When it is below the upper limit of this range, when used as a resist, it can have sufficient solubility to the solvent for the resist, and when it is above the lower limit of this range, good water repellency can be produced on the surface of the resist. (F) The degree of dispersion (Mw/Mn) of the component is preferably 1.0-5.0, more preferably 1.0-3.0, most preferably 1.2-2.5.

(F)成份,可單獨使用1種亦可、將2種以上合併使用亦可。 阻劑組成物含有(F)成份時,(F)成份相對於(A)成份100質量份,通常為使用0.5~10質量份之比例。(F) The component may be used individually by 1 type, and may use it in combination of 2 or more types. When the resist composition contains (F) component, (F) component is normally used in the ratio of 0.5-10 mass parts with respect to 100 mass parts of (A) components.

本實施形態之阻劑組成物中,可再配合目的,適當地添加含有具有混合性的添加劑,例如改良阻劑膜性能而添加的樹脂、溶解抑制劑、可塑劑、安定劑、著色劑、抗暈劑、染料等。In the resist composition of this embodiment, mixed additives can be appropriately added according to the purpose, such as resins added to improve the performance of the resist film, dissolution inhibitors, plasticizers, stabilizers, colorants, and anti-oxidants. Halo agent, dye, etc.

≪有機溶劑成份(S)≫ 本實施形態之阻劑組成物,可將阻劑材料溶解於有機溶劑成份(以下,亦稱為「(S)成份」)之方式而可製得。 (S)成份,只要為可溶解所使用的各種成份、形成均勻溶液者即可,其可由以往作為化學增強型阻劑組成物的溶劑使用的公知成份中,適當地選擇使用任意之成份。 例如:(S)成份,可列舉如:γ-丁內酯等的內酯類;丙酮、甲基乙酮、環己酮、甲基-n-戊酮、甲基異戊酮、2-庚酮等之酮類;乙二醇、二乙二醇、丙二醇、二丙二醇等之多元醇類;乙二醇單乙酸酯、二乙二醇單乙酸酯、丙二醇單乙酸酯,或二丙二醇單乙酸酯等的具有酯鍵結之化合物、前述多元醇類或前述具有酯鍵結之化合物的單甲醚、單乙醚、單丙醚、單丁醚等的單烷醚或單苯醚等具有醚鍵結之化合物等的多元醇類之衍生物[該些之中,又以丙二醇單甲醚乙酸酯(PGMEA)、丙二醇單甲醚(PGME)為佳];二噁烷等的環式醚類,或乳酸甲酯、乳酸乙酯(EL)、乙酸甲酯、乙酸乙酯、乙酸丁酯、丙酮酸甲酯、丙酮酸乙酯、甲氧基丙酸甲酯、乙氧基丙酸乙酯基等之酯類;苯甲醚、乙基苄醚、甲苯酚基甲醚、二苯醚、二苄醚、苯乙醚、丁基苯醚、乙基苯、二乙基苯、戊基苯、異丙基苯、甲苯、二甲苯、異丙基甲苯、三甲苯等之芳香族系有機溶劑、二甲亞碸(DMSO)等。 (S)成份,可單獨使用亦可,以2種以上之混合溶劑方式使用亦可。 其中,又以PGMEA、PGME、γ-丁內酯、EL、環己酮為佳。≪Organic solvent component (S)≫ The resist composition of this embodiment can be obtained by dissolving the resist material in an organic solvent component (hereinafter, also referred to as “(S) component”). The (S) component should be able to dissolve various components used to form a uniform solution, and any component can be appropriately selected from known components conventionally used as solvents for chemically amplified resist compositions. For example: (S) component, such as: lactones such as γ-butyrolactone; acetone, methyl ethyl ketone, cyclohexanone, methyl-n-pentanone, methyl isoamyl ketone, 2-heptanone Ketones such as ketones; polyols such as ethylene glycol, diethylene glycol, propylene glycol, and dipropylene glycol; ethylene glycol monoacetate, diethylene glycol monoacetate, propylene glycol monoacetate, or diethylene glycol monoacetate Compounds having ester linkages such as propylene glycol monoacetate, monoalkyl ethers or monophenyl ethers such as monomethyl ether, monoethyl ether, monopropyl ether, and monobutyl ether of the aforementioned polyols or the aforementioned compounds having ester linkages Derivatives of polyols such as compounds with ether linkages [among them, propylene glycol monomethyl ether acetate (PGMEA) and propylene glycol monomethyl ether (PGME) are preferred]; dioxane, etc. Cyclic ethers, or methyl lactate, ethyl lactate (EL), methyl acetate, ethyl acetate, butyl acetate, methyl pyruvate, ethyl pyruvate, methyl methoxypropionate, ethoxy Esters such as ethyl propionate; anisole, ethyl benzyl ether, cresyl methyl ether, diphenyl ether, dibenzyl ether, phenetole, butyl phenyl ether, ethylbenzene, diethylbenzene, Aromatic organic solvents such as amylbenzene, cumene, toluene, xylene, isopropyltoluene, and mesitylene, dimethylsulfoxide (DMSO), etc. Component (S) may be used alone or as a mixed solvent of two or more types. Among them, PGMEA, PGME, γ-butyrolactone, EL, and cyclohexanone are preferable.

又,亦可使用PGMEA與極性溶劑混合而得的混合溶劑。其添加比(質量比),可於考量PGMEA與極性溶劑之相溶性等之後,作適當之決定即可,較佳為1:9~9:1,更佳為於2:8~8:2之範圍內為佳。 更具體而言,混合作為極性溶劑的EL或環己酮時,PGMEA:EL或環己酮之質量比,較佳為1:9~9:1,更佳為2:8~8:2。又,混合作為極性溶劑的PGME時,PGMEA:PGME之質量比,較佳為1:9~9:1,更佳為2:8~8:2,更較佳為3:7~7:3。此外,亦可使用PGMEA與PGME與環己酮之混合溶劑。 又,(S)成份,其他亦可使用由PGMEA及EL中所選出之至少1種,與γ-丁內酯之混合溶劑。於該情形中,混合比例,依前者與後者之質量比,較佳為70:30~95:5。Moreover, the mixed solvent which mixed PGMEA and a polar solvent can also be used. The addition ratio (mass ratio) can be properly determined after considering the compatibility between PGMEA and polar solvents, etc., preferably 1:9~9:1, more preferably 2:8~8:2 Within the range is better. More specifically, when mixing EL or cyclohexanone as a polar solvent, the mass ratio of PGMEA:EL or cyclohexanone is preferably 1:9 to 9:1, more preferably 2:8 to 8:2. Also, when mixing PGME as a polar solvent, the mass ratio of PGMEA:PGME is preferably 1:9 to 9:1, more preferably 2:8 to 8:2, more preferably 3:7 to 7:3 . In addition, a mixed solvent of PGMEA, PGME, and cyclohexanone can also be used. Moreover, (S) component and others can also use the mixed solvent of at least 1 sort(s) selected from PGMEA and EL, and γ-butyrolactone. In this case, the mixing ratio is preferably 70:30 to 95:5 based on the mass ratio of the former to the latter.

(S)成份之使用量,並未有特別之限定,而可配合可塗佈於基板等的濃度、塗佈膜厚等作適當之設定。一般為使用(S)成份使阻劑組成物的固形成份濃度為0.1~20質量%,較佳為0.2~10質量%之範圍內。The amount of component (S) used is not particularly limited, and can be appropriately set in accordance with the concentration that can be applied to the substrate, etc., and the thickness of the coating film. Generally, the (S) component is used so that the solid content concentration of the resist composition is 0.1-20% by mass, preferably within the range of 0.2-10% by mass.

本實施形態之阻劑組成物中,(A)成份為含有具有結構單位(a0)之樹脂成份(A1),(B)成份為含有由前述通式(b-1)所表示之化合物(b-1)、前述通式(b-2)所表示之化合物(b-2)及前述通式(b-3)所表示之化合物(b-3)所成之群所選出之至少1種((B1)成份)。 本實施形態之阻劑組成物中,因(A1)成份及(B1)成份中之任一種,於其結構中皆含有芳香族環,故推測可提高(A1)成份與(B1)成份之相互作用。因此,使用本實施形態之阻劑組成物形成阻劑圖型之際,可適當地控制經由曝光所產生的酸擴散至圖型的未曝光部(酸擴散),因此推測可改善阻劑圖型之粗糙度。In the resist composition of this embodiment, the (A) component is a resin component (A1) containing a structural unit (a0), and the (B) component is a compound (b) represented by the aforementioned general formula (b-1). -1), at least one selected from the group consisting of the compound (b-2) represented by the aforementioned general formula (b-2) and the compound (b-3) represented by the aforementioned general formula (b-3) ( (B1) ingredients). In the resist composition of the present embodiment, because any one of the (A1) component and (B1) component contains an aromatic ring in its structure, it is speculated that the interaction between the (A1) component and (B1) component can be improved. effect. Therefore, when forming a resist pattern using the resist composition of this embodiment, it is possible to properly control the diffusion of acid generated by exposure to the unexposed portion of the pattern (acid diffusion), so it is presumed that the resist pattern can be improved. the roughness.

(阻劑圖型形成方法) 本實施形態之阻劑圖型形成方法,為具有:使用上述阻劑組成物,於支撐體上形成阻劑膜之步驟、使前述阻劑膜曝光之步驟,及使前述曝光後的阻劑膜顯影而形成阻劑圖型之步驟。 該阻劑圖型形成方法的實施形態之一,例如:依下述方式進行的阻劑圖型之形成方法。(Resist Pattern Formation Method) The method for forming a resist pattern according to this embodiment includes: using the above-mentioned resist composition, forming a resist film on a support; exposing the above-mentioned resist film; and exposing the above-mentioned exposed resist film. The step of developing to form a resist pattern. One of the embodiments of the method for forming a resist pattern is, for example, a method for forming a resist pattern in the following manner.

首先,將上述實施形態之阻劑組成物,使用旋轉塗佈器等塗佈於支撐體上,例如於80~150℃之溫度條件下,施以40~120秒鐘,較佳為60~90秒鐘之燒焙(塗佈後燒焙(Post Apply Bake)(PAB))處理,而形成阻劑膜。 其次,例如使用ArF曝光裝置、電子線描繪裝置、EUV曝光裝置等的曝光裝置,介由形成特定圖型之遮罩(遮罩圖型)進行曝光,或不介由遮罩圖型而使用電子線對該阻劑膜以直接照射方式進行描繪等的選擇性曝光之後,再例如於80~150℃之溫度條件下,施以40~120秒鐘,較佳為60~90秒鐘之燒焙(曝後燒焙(Post Exposure Bake) (PEB))處理。 其次,對前述阻劑膜進行顯影處理。顯影處理,於鹼顯影製程時,為使用鹼顯影液,於溶劑顯影製程時,為使用含有有機溶劑的顯影液(有機系顯影液)進行。 顯影處理後,較佳為進行洗滌處理。洗滌處理,於鹼顯影製程時,以使用純水的水洗滌為佳,於溶劑顯影製程時,以使用含有有機溶劑的洗滌液為佳。 於溶劑顯影製程時,可於前述顯影處理或洗滌處理後,使用超臨界流體進行去除附著於圖型上的顯影液或洗滌液之處理。 於顯影處理後或洗滌處理後,進行乾燥處理。又,依情形之不同,亦可於上述顯影處理後進行燒焙處理(後燒焙)。 依此方式,即可形成阻劑圖型。First, apply the resist composition of the above-mentioned embodiment on the support body using a spin coater, for example, at a temperature of 80-150°C for 40-120 seconds, preferably 60-90°C. Baking in seconds (Post Apply Bake (PAB)) to form a resist film. Next, for example, use an exposure device such as an ArF exposure device, an electron beam drawing device, an EUV exposure device, etc., to perform exposure through a mask (mask pattern) that forms a specific pattern, or use an electron beam without a mask pattern. After selectively exposing the resist film by direct irradiation, drawing, etc., it is then baked for 40 to 120 seconds, preferably 60 to 90 seconds, at a temperature of 80 to 150°C. (Post Exposure Bake (PEB)) treatment. Next, development treatment is performed on the aforementioned resist film. The development process is carried out using an alkali developer in the alkali development process, and a developer containing an organic solvent (organic developer) in the solvent development process. After the development treatment, it is preferable to perform a washing treatment. In the washing process, it is better to use pure water for washing in the alkaline development process, and it is better to use a washing solution containing an organic solvent in the solvent development process. In the solvent development process, after the above-mentioned development treatment or washing treatment, supercritical fluid can be used to remove the developing solution or washing solution adhering to the pattern. After the developing treatment or after the washing treatment, drying treatment is performed. In addition, depending on the situation, a firing treatment (post-baking) may be performed after the above-mentioned development treatment. In this manner, a resist pattern can be formed.

支撐體,並未有特別之限定,而可使用以往公知之物質,可列舉如:電子零件用之基板,或於其上形成特定配線圖型者等。更具體而言,可列舉如:矽晶圓、銅、鉻、鐵、鋁等的金屬製基板,或玻璃基板等。配線圖型之材料,則可使用例如:銅、鋁、鎳、金等。 又,支撐體,亦可為於上述的基板上,設置無機系及/或有機系之膜者。無機系之膜,可列舉如:無機抗反射膜(無機BARC)等。有機系之膜,可列舉如:有機抗反射膜(有機BARC),或多層阻劑法中,作為下層有機膜等的有機膜。 其中,多層阻劑法係指,於基板上設置至少一層的有機膜(下層有機膜),與至少一層的阻劑膜(上層阻劑膜),再使用形成於上層阻劑膜的阻劑圖型作為遮罩,對下層有機膜進行圖型形成(Patterning)之方法,依此方法,可形成高長徑比的圖型。即,多層阻劑法,因可以下層有機膜確保所需要的厚度,故可使阻劑膜薄膜化,而形成高長徑比的微細圖型。 多層阻劑法中,基本上,可分為具有上層阻劑膜,與下層有機膜等二層結構之方法(2層阻劑法),與於上層阻劑膜與下層有機膜之間,設有一層以上的中間層(金屬薄膜等)的具有三層以上的多層結構之方法(3層阻劑法)。The support is not particularly limited, and conventionally known ones can be used, for example, substrates for electronic parts, or those on which a specific wiring pattern is formed. More specifically, metal substrates such as silicon wafers, copper, chromium, iron, and aluminum, glass substrates, and the like are exemplified. For the material of the wiring pattern, for example, copper, aluminum, nickel, gold, etc. can be used. In addition, the support may be one in which an inorganic and/or organic film is provided on the above-mentioned substrate. Inorganic films include, for example, inorganic anti-reflective films (inorganic BARC). Examples of organic films include organic anti-reflective coatings (organic BARC) and organic films used as lower organic films in the multilayer resist method. Among them, the multilayer resist method refers to setting at least one layer of organic film (lower layer organic film) and at least one layer of resist film (upper layer resist film) on the substrate, and then using the resist pattern formed on the upper layer resist film The pattern is used as a mask to pattern the underlying organic film. According to this method, a pattern with a high aspect ratio can be formed. That is, in the multilayer resist method, since the required thickness of the lower organic film can be ensured, the resist film can be thinned and a fine pattern with a high aspect ratio can be formed. In the multilayer resist method, basically, it can be divided into a method having a two-layer structure of an upper resist film and a lower organic film (two-layer resist method), and a method in which a resist film is placed between the upper resist film and the lower organic film. A method of having a multilayer structure of more than three layers with one or more intermediate layers (metal thin film, etc.) (3-layer resist method).

曝光時使用的波長,並未有特別之限定,而可使用ArF準分子雷射、KrF準分子雷射、F2 準分子雷射、EUV(極端紫外線)、VUV(真空紫外線)、EB(電子線)、X射線、軟X射線等的輻射線。前述阻劑組成物,對於KrF準分子雷射、ArF準分子雷射、EB或EUV用具有高度的有用性,對於ArF準分子雷射、EB或EUV用具有更高的有用性,對EB或EUV用時,則具有特高的有用性。The wavelength used for exposure is not particularly limited, but ArF excimer laser, KrF excimer laser, F 2 excimer laser, EUV (extreme ultraviolet), VUV (vacuum ultraviolet), EB (electron line), X-rays, soft X-rays, etc. The aforementioned resist composition is highly useful for KrF excimer laser, ArF excimer laser, EB or EUV, and has higher usefulness for ArF excimer laser, EB or EUV. When using EUV, it has extremely high practicality.

阻劑膜的曝光方法,可為於空氣或氮氣等的惰性氣體中進行的通常曝光(乾式曝光)亦可、浸液曝光(Liquid Immersion Lithography)亦可。 浸液曝光為,預先於阻劑膜與曝光裝置的最下位置的透鏡之間,充滿具有較空氣的折射率為更大折射率的溶劑(浸液介質),再於該狀態下進行曝光(浸液曝光)的曝光方法。 浸液介質,以具有較空氣的折射率為更大,且,較被曝光的阻劑膜之折射率為更小折射率的溶劑為佳。該溶劑的折射率,只要為前述範圍內時,則未有特別之限制。 具有較空氣的折射率為更大,且,較前述阻劑膜的折射率為更小折射率的溶劑,例如:水、氟系惰性液體、矽系溶劑、烴系溶劑等。 氟系惰性液體之具體例,可列舉如:C3 HCl2 F5 、C4 F9 OCH3 、C4 F9 OC2 H5 、C5 H3 F7 等的氟系化合物作為主成份的液體等,其沸點以70~180℃者為佳,以80~160℃者為較佳。氟系惰性液體為具有上述範圍的沸點者時,以其於曝光結束後,可使用簡便之方法去除浸液時使用的介質,而為較佳。 氟系惰性液體,特別是以烷基的全部氫原子被氟原子取代而得之全氟烷基化合物為佳。全氟烷基化合物,具體而言,可列舉如:全氟烷醚化合物、全氟烷胺化合物等。 此外,具體上,前述全氟烷醚化合物,可列舉如:全氟(2-丁基-四氫呋喃)(沸點102℃)等,前述全氟烷胺化合物,可列舉如:全氟三丁胺(沸點174℃)等。 浸液介質,就費用、安全性、環境問題、廣用性等的觀點,以使用水為佳。The exposure method of the resist film may be normal exposure (dry exposure) performed in an inert gas such as air or nitrogen, or liquid immersion exposure (Liquid Immersion Lithography). Liquid immersion exposure is to fill the gap between the resist film and the lens at the lowest position of the exposure device in advance with a solvent (immersion medium) having a higher refractive index than air, and then perform exposure in this state ( immersion exposure) exposure method. The immersion medium is preferably a solvent having a higher refractive index than air and a lower refractive index than the exposed resist film. The refractive index of the solvent is not particularly limited as long as it is within the aforementioned range. A solvent having a higher refractive index than air and a smaller refractive index than the aforementioned resist film, such as water, fluorine-based inert liquids, silicon-based solvents, hydrocarbon-based solvents, etc. Specific examples of fluorine-based inert liquids include fluorine-based compounds such as C 3 HCl 2 F 5 , C 4 F 9 OCH 3 , C 4 F 9 OC 2 H 5 , and C 5 H 3 F 7 as main components. Liquids etc. preferably have a boiling point of 70-180°C, more preferably 80-160°C. When the fluorine-based inert liquid has a boiling point in the above-mentioned range, it is preferable that the medium used for immersion can be removed by a simple method after the exposure is completed. The fluorine-based inert liquid is preferably a perfluoroalkyl compound in which all the hydrogen atoms of the alkyl group are replaced by fluorine atoms. Specific examples of perfluoroalkyl compounds include perfluoroalkyl ether compounds, perfluoroalkylamine compounds, and the like. In addition, specifically, the aforementioned perfluoroalkane ether compounds include, for example, perfluoro(2-butyl-tetrahydrofuran) (boiling point 102° C.), and the aforementioned perfluoroalkane amine compounds include, for example: perfluorotributylamine ( boiling point 174°C), etc. As the immersion medium, it is preferable to use water from the viewpoints of cost, safety, environmental problems, wide applicability, and the like.

鹼顯影製程的顯影處理中所使用的鹼顯影液,例如:0.1~10質量%氫氧化四甲基銨(TMAH)水溶液等。 溶劑顯影製程的顯影處理中所使用的有機系顯影液中所含有的有機溶劑,只要可溶解(A)成份(曝光前的(A)成份)者即可,其可由公知的有機溶劑中適當地選擇。具體而言,可列舉如:酮系溶劑、酯系溶劑、醇系溶劑、腈系溶劑、醯胺系溶劑、醚系溶劑等的極性溶劑、烴系溶劑等。 酮系溶劑,為結構中含有C-C(=O)-C的有機溶劑。酯系溶劑,為結構中含有C-C(=O)-O-C的有機溶劑。醇系溶劑為結構中含有醇性羥基的有機溶劑。「醇性羥基」係指,脂肪族烴基中的碳原子所鍵結的羥基之意。腈系溶劑,為結構中含有腈基的有機溶劑。醯胺系溶劑,為結構中含有醯胺基的有機溶劑。醚系溶劑,為結構中含有C-O-C 的有機溶劑。 有機溶劑中,亦存在結構中具有複數種顯示上述各溶劑特徴的官能基之有機溶劑,為該情形時,該有機溶劑亦相當於其所含有的任一官能基之溶劑種類。例如:二乙二醇單甲醚,為相當於上述分類中的醇系溶劑、醚系溶劑中之任一者。 烴系溶劑,為由可被鹵化的烴所構成的不具有鹵素原子以外的取代基之烴溶劑。鹵素原子,可列舉如:氟原子、氯原子、溴原子、碘原子等,又以氟原子為佳。 有機系顯影液含有的有機溶劑,於上述之中,又以極性溶劑為佳,以酮系溶劑、酯系溶劑、腈系溶劑等為佳。The alkaline developing solution used in the developing process of the alkaline developing process, for example: 0.1-10 mass % tetramethylammonium hydroxide (TMAH) aqueous solution etc. The organic solvent contained in the organic developer used in the developing process of the solvent developing process is only required to dissolve the (A) component (the (A) component before exposure), and it can be suitably prepared from known organic solvents. choose. Specifically, polar solvents such as ketone-based solvents, ester-based solvents, alcohol-based solvents, nitrile-based solvents, amide-based solvents, and ether-based solvents, hydrocarbon-based solvents, and the like are exemplified. Ketone solvents are organic solvents containing C-C(=O)-C in their structure. Ester solvents are organic solvents containing C-C(=O)-O-C in their structure. Alcoholic solvents are organic solvents containing alcoholic hydroxyl groups in their structures. "Alcoholic hydroxyl group" means a hydroxyl group bonded to a carbon atom in an aliphatic hydrocarbon group. Nitrile solvents are organic solvents containing nitrile groups in their structure. Amide-based solvents are organic solvents containing amide groups in their structure. Ether solvents are organic solvents containing C-O-C in the structure. Among the organic solvents, there are also organic solvents having a plurality of functional groups showing the characteristics of each of the above solvents in the structure, and in this case, the organic solvent is also a solvent type corresponding to any one of the functional groups contained therein. For example, diethylene glycol monomethyl ether corresponds to any one of alcohol-based solvents and ether-based solvents in the above classification. The hydrocarbon-based solvent is a hydrocarbon solvent that is composed of a hydrocarbon that may be halogenated and does not have a substituent other than a halogen atom. The halogen atom includes, for example, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, etc., and a fluorine atom is preferred. Among the above-mentioned organic solvents contained in the organic developer, polar solvents are preferred, and ketone-based solvents, ester-based solvents, and nitrile-based solvents are preferred.

酮系溶劑,例如:1-辛酮、2-辛酮、1-壬酮、2-壬酮、丙酮、4-庚酮、1-己酮、2-己酮、二異丁酮、環己酮、甲基環己酮、苯基丙酮、甲基乙酮、甲基異丁酮、乙醯基丙酮、丙酮基丙酮、紫羅蘭酮、二丙酮醇、乙醯卡必醇、苯乙酮、甲基萘酮、異佛爾酮、丙烯碳酸酯、γ-丁內酯、甲基戊酮(2-庚酮)等。該些之中,酮系溶劑,又以甲基戊酮(2-庚酮)為佳。Ketone solvents, such as: 1-octanone, 2-octanone, 1-nonanone, 2-nonanone, acetone, 4-heptanone, 1-hexanone, 2-hexanone, diisobutyl ketone, cyclohexane Ketone, methylcyclohexanone, phenylacetone, methyl ethyl ketone, methyl isobutyl ketone, acetyl acetone, acetonyl acetone, ionone, diacetone alcohol, acetyl carbitol, acetophenone, methyl Kenaphthone, isophorone, propylene carbonate, γ-butyrolactone, methylpentanone (2-heptanone), etc. Among these, methylpentanone (2-heptanone) is preferable as a ketone-based solvent.

酯系溶劑,例如:乙酸甲酯、乙酸丁酯、乙酸乙酯、乙酸異丙酯、乙酸戊酯、乙酸異戊酯、甲氧基乙酸乙酯、乙氧基乙酸乙酯、丙二醇單甲醚乙酸酯、乙二醇單乙醚乙酸酯、乙二醇單丙醚乙酸酯、乙二醇單丁醚乙酸酯、乙二醇單苯醚乙酸酯、二乙二醇單甲醚乙酸酯、二乙二醇單丙醚乙酸酯、二乙二醇單乙醚乙酸酯、二乙二醇單苯醚乙酸酯、二乙二醇單丁醚乙酸酯、2-甲氧基丁基乙酸酯、3-甲氧基丁基乙酸酯、4-甲氧基丁基乙酸酯、3-甲基-3-甲氧基丁基乙酸酯、3-乙基-3-甲氧基丁基乙酸酯、丙二醇單乙醚乙酸酯、丙二醇單丙醚乙酸酯、2-乙氧基丁基乙酸酯、4-乙氧基丁基乙酸酯、4-丙氧基丁基乙酸酯、2-甲氧基戊基乙酸酯、3-甲氧基戊基乙酸酯、4-甲氧基戊基乙酸酯、2-甲基-3-甲氧基戊基乙酸酯、3-甲基-3-甲氧基戊基乙酸酯、3-甲基-4-甲氧基戊基乙酸酯、4-甲基-4-甲氧基戊基乙酸酯、丙二醇二乙酸酯、甲酸甲酯、甲酸乙酯、甲酸丁酯、甲酸丙酯、乳酸乙酯、乳酸丁酯、乳酸丙酯、碳酸乙酯、碳酸丙酯、碳酸丁酯、丙酮酸甲酯、丙酮酸乙酯、丙酮酸丙酯、丙酮酸丁酯、乙醯乙酸甲酯、乙醯乙酸乙酯、丙酸甲酯、丙酸乙酯、丙酸丙酯、丙酸異丙酯、2-羥基丙酸甲酯、2-羥基丙酸乙酯、甲基-3-甲氧基丙酸酯、乙基-3-甲氧基丙酸酯、乙基-3-乙氧基丙酸酯、丙基-3-甲氧基丙酸酯等。該些之中,酯系溶劑,又以乙酸丁酯為佳。Ester solvents, such as: methyl acetate, butyl acetate, ethyl acetate, isopropyl acetate, amyl acetate, isoamyl acetate, ethyl methoxyacetate, ethyl ethoxyacetate, propylene glycol monomethyl ether Acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monopropyl ether acetate, ethylene glycol monobutyl ether acetate, ethylene glycol monophenyl ether acetate, diethylene glycol monomethyl ether Acetate, diethylene glycol monopropyl ether acetate, diethylene glycol monoethyl ether acetate, diethylene glycol monophenyl ether acetate, diethylene glycol monobutyl ether acetate, 2-methyl Oxybutyl acetate, 3-methoxybutyl acetate, 4-methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, 3-ethyl -3-methoxybutyl acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, 2-ethoxybutyl acetate, 4-ethoxybutyl acetate, 4 -propoxybutyl acetate, 2-methoxypentyl acetate, 3-methoxypentyl acetate, 4-methoxypentyl acetate, 2-methyl-3- Methoxypentyl acetate, 3-methyl-3-methoxypentyl acetate, 3-methyl-4-methoxypentyl acetate, 4-methyl-4-methoxy Amyl acetate, propylene glycol diacetate, methyl formate, ethyl formate, butyl formate, propyl formate, ethyl lactate, butyl lactate, propyl lactate, ethyl carbonate, propyl carbonate, carbonic acid Butyl ester, methyl pyruvate, ethyl pyruvate, propyl pyruvate, butyl pyruvate, methyl acetoacetate, ethyl acetoacetate, methyl propionate, ethyl propionate, propyl propionate, Isopropyl propionate, methyl 2-hydroxypropionate, ethyl 2-hydroxypropionate, methyl-3-methoxypropionate, ethyl-3-methoxypropionate, ethyl-3 - Ethoxypropionate, Propyl-3-methoxypropionate, etc. Among these, butyl acetate is preferable as an ester-based solvent.

腈系溶劑,例如:乙腈、丙腈、戊腈、丁腈等。Nitrile solvents, such as acetonitrile, propionitrile, valeronitrile, butyronitrile, etc.

有機系顯影液中,必要時,可添加公知的添加劑。該添加劑例如:界面活性劑等。界面活性劑,並未有特別之限定,例如:可使用離子性或非離子性的氟系及/或矽系界面活性劑等。 界面活性劑,以非離子性的界面活性劑為佳,又以非離子性的氟系界面活性劑,或非離子性的矽系界面活性劑為較佳。 添加界面活性劑時,其添加量相對於有機系顯影液之全量,通常為0.001~5質量%,又以0.005~2質量%為佳,以0.01~0.5質量%為較佳。To the organic developer, known additives may be added as necessary. The additives are, for example: surfactants and the like. The surfactant is not particularly limited, for example, ionic or nonionic fluorine-based and/or silicon-based surfactants can be used. The surfactant is preferably a non-ionic surfactant, and more preferably a non-ionic fluorine-based surfactant or a non-ionic silicon-based surfactant. When adding a surfactant, the amount added is usually 0.001-5% by mass, preferably 0.005-2% by mass, more preferably 0.01-0.5% by mass, relative to the total amount of the organic developer.

顯影處理,可使用公知的顯影方法予以實施,例如:將支撐體浸漬於顯影液中維持特定時間之方法(浸漬法)、使顯影液依表面張力覆蓋支撐體表面,於靜止狀態維持特定時間之方法(攪練(puddle)法)、將顯影液對支撐體表面進行噴霧之方法(噴霧法)、將顯影液由依特定速度掃描的顯影液塗出噴嘴持續塗出於依特定速度迴轉的支撐體上之方法(Dynamicdispense法)等。The development treatment can be carried out using known developing methods, for example: the method of immersing the support body in the developer solution for a specific time (immersion method), making the developer solution cover the surface of the support body according to the surface tension, and maintaining it in a static state for a specific time period Method (puddle method), method of spraying the developer on the surface of the support (spray method), spraying the developer from the nozzle that scans at a specific speed to the support that rotates at a specific speed The above method (Dynamicdispense method), etc.

溶劑顯影製程中,於顯影處理後的洗滌處理所使用的洗滌液中所含有有機溶劑,例如:可由前述被列舉作為有機系顯影液用的有機溶劑之有機溶劑中,適當地選擇使用不易溶解阻劑圖型的溶劑。通常為使用由烴系溶劑、酮系溶劑、酯系溶劑、醇系溶劑、醯胺系溶劑及醚系溶劑所選出之至少1種的溶劑。該些之中,又以由烴系溶劑、酮系溶劑、酯系溶劑、醇系溶劑及醯胺系溶劑所選出之至少1種為佳,以由醇系溶劑及酯系溶劑所選出之至少1種為較佳,以醇系溶劑為特佳。 洗滌液所使用的醇系溶劑,以碳數6~8的1元醇為佳,該1元醇可為直鏈狀、分支狀或環狀之任一者。具體而言,可列舉如:1-己醇、1-庚醇、1-辛醇、2-己醇、2-庚醇、2-辛醇、3-己醇、3-庚醇、3-辛醇、4-辛醇、苄醇等。該些之中,又以1-己醇、2-庚醇、2-己醇為佳,以1-己醇、2-己醇為較佳。 該些的有機溶劑,可單獨使用其中任一種,或將2種以合併使用皆可。又,亦可與上述以外的有機溶劑或水混合後使用。但,考量顯影特性時,洗滌液中的水之添加量,相對於洗滌液之全量,以30質量%以下為佳,以10質量%以下為較佳,以5質量%以下為更佳,以3質量%以下為特佳。 洗滌液中,必要時,可添加公知的添加劑。該添加劑例如:界面活性劑等。界面活性劑,例如:與前述為相同之內容等,又以非離子性的界面活性劑為佳,又以非離子性的氟系界面活性劑,或非離子性的矽系界面活性劑為較佳。 添加界面活性劑時,其添加量,相對於洗滌液全量,通常為0.001~5質量%,又以0.005~2質量%為佳,以0.01~0.5質量%為較佳。In the solvent development process, the organic solvent contained in the washing solution used in the washing treatment after the development treatment, for example, can be appropriately selected from the organic solvents listed as the organic solvents for the organic system developing solution, and use a non-dissolving resist. Solvents for Dosage Graphics. Usually, at least one solvent selected from hydrocarbon-based solvents, ketone-based solvents, ester-based solvents, alcohol-based solvents, amide-based solvents, and ether-based solvents is used. Among these, at least one selected from hydrocarbon-based solvents, ketone-based solvents, ester-based solvents, alcohol-based solvents, and amide-based solvents is preferred, and at least one selected from alcohol-based solvents and ester-based solvents One type is preferred, and alcoholic solvents are particularly preferred. The alcohol-based solvent used in the cleaning solution is preferably a monohydric alcohol with 6 to 8 carbon atoms, and the monohydric alcohol may be linear, branched or cyclic. Specifically, examples include: 1-hexanol, 1-heptanol, 1-octanol, 2-hexanol, 2-heptanol, 2-octanol, 3-hexanol, 3-heptanol, 3- Octanol, 4-octanol, benzyl alcohol, etc. Among these, 1-hexanol, 2-heptanol, and 2-hexanol are preferable, and 1-hexanol and 2-hexanol are more preferable. These organic solvents may be used either alone or in combination. Moreover, it can also use after mixing with the organic solvent other than the above, or water. However, when considering the development characteristics, the amount of water added to the washing solution is preferably not more than 30% by mass, more preferably not more than 10% by mass, more preferably not more than 5% by mass, based on the total amount of the cleaning solution. 3% by mass or less is particularly preferred. To the washing liquid, known additives may be added as necessary. The additives are, for example: surfactants and the like. Surfactants, for example: the same content as the above, etc., and preferably non-ionic surfactants, non-ionic fluorine-based surfactants, or non-ionic silicon-based surfactants good. When adding a surfactant, the amount thereof is usually 0.001-5% by mass, preferably 0.005-2% by mass, more preferably 0.01-0.5% by mass, relative to the total amount of the washing liquid.

使用洗滌液的洗滌處理(洗淨處理),可依公知的洗滌方法實施。該洗滌處理之方法,例如:將洗滌液持續塗出於依特定速度迴轉的支撐體上之方法(迴轉塗佈法)、將支撐體浸漬於洗滌液中維持特定時間之方法(浸漬法)、將洗滌液對支撐體表面進行噴霧之方法(噴霧法)等。The washing treatment (cleaning treatment) using a washing liquid can be carried out according to a known washing method. The method of washing treatment, for example: the method of continuously coating the washing liquid on the support rotating at a specific speed (rotary coating method), the method of immersing the support in the washing liquid for a specific time (dipping method), A method of spraying a cleaning solution on the surface of a support (spray method), etc.

以上說明的本實施形態之阻劑圖型形成方法中,因使用上述第1態樣的阻劑組成物,故於形成阻劑圖型之際,可達到高感度化。此外,依該阻劑圖型形成方法,可使微影蝕刻特性(解析性、降低粗糙度等)更向上提升,使解析性提更,而可形成具有良好形狀的阻劑圖型。 [實施例]In the resist pattern forming method of the present embodiment described above, since the resist composition of the above-mentioned first aspect is used, high sensitivity can be achieved when forming a resist pattern. In addition, according to the resist pattern forming method, the lithographic etching characteristics (resolution, roughness reduction, etc.) can be further improved, the resolution can be improved, and a resist pattern with a good shape can be formed. [Example]

以下,將以實施例對本發明作更詳細的說明,但本發明並不受該些例示所限定。Hereinafter, the present invention will be described in more detail with examples, but the present invention is not limited by these examples.

(聚合物合成例1:聚合物P-1之合成) 將單體(m101)10.0g、單體(m01)12.7g、作為聚合起始劑之偶氮雙(異丁酸)二甲基(V-601)1.4g溶解於MEK(甲基乙酮)50.0g中,於氮氛圍下加熱至85℃,攪拌5小時。隨後,將乙酸9.4g、甲醇160g加入反應液中,於30℃下進行8小時去保護反應。反應結束後,將所製得的反應液沈澱於庚烷2500g中,進行洗淨。將所得白色固形物過濾,進行一晩減壓乾燥後,製得目的物之高分子化合物P-1 14.1g。 所製得之聚合物P-1,依GPC測定所求得的標準聚苯乙烯換算的重量平均分子量(Mw)為6600,分子量分散度(Mw/Mn)為1.63。又,13 C-NMR所求得的共聚組成比(結構式中的各結構單位之比例(莫耳比))為l/m=50/50。(Polymer Synthesis Example 1: Synthesis of Polymer P-1) 10.0 g of monomer (m101), 12.7 g of monomer (m01), and azobis(isobutyric acid) dimethyl ( V-601) 1.4 g was dissolved in 50.0 g of MEK (methyl ethyl ketone), heated to 85° C. under a nitrogen atmosphere, and stirred for 5 hours. Subsequently, 9.4 g of acetic acid and 160 g of methanol were added to the reaction solution, and a deprotection reaction was performed at 30° C. for 8 hours. After completion of the reaction, the obtained reaction liquid was precipitated in 2500 g of heptane and washed. The resulting white solid was filtered and dried under reduced pressure overnight to obtain 14.1 g of the target polymer compound P-1. The obtained polymer P-1 had a standard polystyrene-equivalent weight average molecular weight (Mw) of 6600 and a molecular weight dispersion (Mw/Mn) of 1.63 as determined by GPC. Also, the copolymerization composition ratio (ratio (molar ratio) of each structural unit in the structural formula) obtained by 13 C-NMR was 1/m=50/50.

Figure 02_image153
Figure 02_image153

(聚合物合成例2~5:聚合物P-2~P-5之合成) 將表1所示化合物,使用如表1所示之莫耳比,依與聚合物合成例1為相同之方法,合成聚合物P-2~P-5。 將所製得之聚合物P-2~P-5,依13 C-NMR所求得的該高分子化合物之共聚組成比(高分子化合物中的各結構單位之比例(莫耳比))、GPC測定所求得的標準聚苯乙烯換算之質量平均分子量(Mw)及分子量分散度(Mw/Mn)併記於表1中。(Polymer Synthesis Examples 2-5: Synthesis of Polymers P-2-P-5) The compounds shown in Table 1 were used in the molar ratio shown in Table 1, according to the same method as in Polymer Synthesis Example 1 , synthetic polymer P-2 ~ P-5. For the obtained polymers P-2 to P-5, according to the copolymerization composition ratio of the polymer compound obtained by 13 C-NMR (the ratio of each structural unit in the polymer compound (molar ratio)), Table 1 shows the mass average molecular weight (Mw) and molecular weight dispersion (Mw/Mn) obtained by GPC measurement in terms of standard polystyrene.

(聚合物合成例6:聚合物P-6之合成) 將單體(m101)6.0g、單體(m01)15.2g、單體(m21) 1.7g、作為聚合起始劑之偶氮雙(異丁酸)二甲基(V-601) 1.4g溶解於MEK(甲基乙酮)50.0g中,於氮氛圍下加熱至85℃,攪拌5小時。隨後,將乙酸11.3g、甲醇190g加入反應液中,於30℃下進行8小時去保護反應。反應結束後,將所製得的反應液沈澱於庚烷2500g中,進行洗淨。將所得白色固形物過濾,進行一晩減壓乾燥後,製得目的物之高分子化合物(P-6) 13.2g。 所製得之高分子化合物(P-6),依GPC測定所求得的標準聚苯乙烯換算的重量平均分子量(Mw)為7200,分子量分散度(Mw/Mn)為1.65。又,13 C-NMR所求得的共聚組成比(結構式中的各結構單位之比例(莫耳比))為l/m/n=30/60/10。(Polymer Synthesis Example 6: Synthesis of Polymer P-6) 6.0 g of monomer (m101), 15.2 g of monomer (m01), 1.7 g of monomer (m21), and azobis( 1.4 g of isobutyric acid) dimethyl (V-601) was dissolved in 50.0 g of MEK (methyl ethyl ketone), heated to 85° C. under a nitrogen atmosphere, and stirred for 5 hours. Subsequently, 11.3 g of acetic acid and 190 g of methanol were added to the reaction liquid, and a deprotection reaction was performed at 30° C. for 8 hours. After completion of the reaction, the obtained reaction liquid was precipitated in 2500 g of heptane and washed. The resulting white solid was filtered and dried under reduced pressure overnight to obtain 13.2 g of the target polymer compound (P-6). The obtained polymer compound (P-6) had a standard polystyrene-equivalent weight average molecular weight (Mw) of 7,200 and a molecular weight dispersion (Mw/Mn) of 1.65 as measured by GPC. Also, the copolymerization composition ratio (ratio (molar ratio) of each structural unit in the structural formula) obtained by 13 C-NMR was 1/m/n=30/60/10.

Figure 02_image155
Figure 02_image155

(聚合物合成例7:聚合物P-7之合成) 將單體(m101)6.0g、單體(m01)15.2g、單體(m31)2.3 g、作為聚合起始劑之偶氮雙(異丁酸)二甲基(V-601) 1.4g溶解於MEK (甲基乙酮)50.0g中,於氮氛圍下加熱至85℃,攪拌5小時。隨後,將乙酸11.3g、甲醇190g加入反應液中,於30℃下進行8小時去保護反應。反應結束後,將所製得的反應液沈澱於庚烷2500g中,進行洗淨。將所得白色固形物過濾,進行一晩減壓乾燥後,製得目的物之高分子化合物(P-7) 13.8g。 所製得之高分子化合物(P-7),依GPC測定所求得的標準聚苯乙烯換算的重量平均分子量(Mw)為7000,分子量分散度(Mw/Mn)為1.67。又,碳13核磁共振圖譜(150MHz_13 C-NMR)所求得的共聚組成比(結構式中的各結構單位之比例(莫耳比))為l/m/n=30/60/10。(Polymer Synthesis Example 7: Synthesis of Polymer P-7) 6.0 g of monomer (m101), 15.2 g of monomer (m01), 2.3 g of monomer (m31), and azobis( 1.4 g of isobutyric acid) dimethyl (V-601) was dissolved in 50.0 g of MEK (methyl ethyl ketone), heated to 85° C. under a nitrogen atmosphere, and stirred for 5 hours. Subsequently, 11.3 g of acetic acid and 190 g of methanol were added to the reaction liquid, and a deprotection reaction was performed at 30° C. for 8 hours. After completion of the reaction, the obtained reaction liquid was precipitated in 2500 g of heptane and washed. The resulting white solid was filtered and dried under reduced pressure overnight to obtain 13.8 g of the target polymer compound (P-7). The obtained polymer compound (P-7) had a standard polystyrene-equivalent weight average molecular weight (Mw) of 7,000 and a molecular weight dispersion (Mw/Mn) of 1.67 as determined by GPC measurement. Also, the copolymerization composition ratio (ratio (molar ratio) of each structural unit in the structural formula) obtained from the carbon 13 nuclear magnetic resonance spectrum ( 150MHz_13C -NMR) is l/m/n=30/60/10.

Figure 02_image157
Figure 02_image157

(聚合物合成例8~9:聚合物P-8~P-9之合成) 將表1所示化合物,使用如表1所示之莫耳比,依與聚合物合成例1為相同之方法,合成聚合物P-8~P-9。 將所製得之聚合物P-8~P-9,依13 C-NMR所求得的該高分子化合物之共聚組成比(高分子化合物中的各結構單位之比例(莫耳比))、GPC測定所求得的標準聚苯乙烯換算之質量平均分子量(Mw)及分子量分散度(Mw/Mn)併記於表1中。(Polymer Synthesis Examples 8-9: Synthesis of Polymers P-8-P-9) The compounds shown in Table 1 were used in the molar ratio shown in Table 1, according to the same method as in Polymer Synthesis Example 1 , synthetic polymer P-8 ~ P-9. For the obtained polymers P-8 to P-9, the copolymerization composition ratio of the polymer compound obtained by 13 C-NMR (the ratio of each structural unit in the polymer compound (molar ratio)), Table 1 shows the mass average molecular weight (Mw) and molecular weight dispersion (Mw/Mn) obtained by GPC measurement in terms of standard polystyrene.

(聚合物合成例10:聚合物P-10之合成) 將表1所示化合物,使用如表1所示之莫耳比,依與聚合物合成例6為相同之方法,合成聚合物P-10。 將所製得之聚合物P-10,依13 C-NMR所求得的該高分子化合物之共聚組成比(高分子化合物中的各結構單位之比例(莫耳比))、GPC測定所求得的標準聚苯乙烯換算之質量平均分子量(Mw)及分子量分散度(Mw/Mn)併記於表1中。(Polymer Synthesis Example 10: Synthesis of Polymer P-10) With the compounds shown in Table 1, using the molar ratio shown in Table 1, according to the same method as Polymer Synthesis Example 6, synthesize Polymer P-10 10. The obtained polymer P-10 was obtained according to the copolymerization composition ratio of the polymer compound obtained by 13 C-NMR (the ratio of each structural unit in the polymer compound (molar ratio)), and the ratio obtained by GPC measurement. Table 1 shows the obtained mass average molecular weight (Mw) and molecular weight dispersion (Mw/Mn) in terms of standard polystyrene.

(聚合物合成例11:聚合物P-11之合成) 將表1所示化合物,使用如表1所示之莫耳比,依與聚合物合成例7為相同之方法,合成聚合物P-11。 將所製得之聚合物P-11,依13 C-NMR所求得的該高分子化合物之共聚組成比(高分子化合物中的各結構單位之比例(莫耳比))、GPC測定所求得的標準聚苯乙烯換算之質量平均分子量(Mw)及分子量分散度(Mw/Mn)併記於表1中。(Polymer Synthesis Example 11: Synthesis of Polymer P-11) With the compounds shown in Table 1, using the molar ratio shown in Table 1, according to the same method as Polymer Synthesis Example 7, synthesize Polymer P-11 11. The obtained polymer P-11 was obtained according to the copolymerization composition ratio of the polymer compound obtained by 13 C-NMR (the ratio of each structural unit in the polymer compound (molar ratio)), and the ratio obtained by GPC measurement. Table 1 shows the obtained mass average molecular weight (Mw) and molecular weight dispersion (Mw/Mn) in terms of standard polystyrene.

Figure 02_image159
Figure 02_image159

Figure 02_image161
Figure 02_image161

<阻劑組成物之製造> 將表2及3所示各成份混合、溶解,分別製得各例之阻劑組成物。<Manufacture of resist composition> The ingredients shown in Tables 2 and 3 were mixed and dissolved to prepare the resist compositions of each example.

Figure 02_image163
Figure 02_image163

Figure 02_image165
Figure 02_image165

表2及3中,各簡稱分別具有以下之意義。[ ]內之數值為添加量(質量份)。 (A)-1~(A)-11:前述聚合物P-1~P-11。 (B)-1~(B)-18:下述化學式(B)-1~(B)-18所表示之酸產生劑。 (D)-1:下述化學式(D)-1所表示之酸擴散抑制劑。 (S)-1:丙二醇單甲醚乙酸酯/丙二醇單甲醚=40/60 (質量比)的混合溶劑。In Tables 2 and 3, each abbreviation has the following meanings respectively. The value in [ ] is the added amount (parts by mass). (A)-1 to (A)-11: the aforementioned polymers P-1 to P-11. (B)-1 to (B)-18: Acid generators represented by the following chemical formulas (B)-1 to (B)-18. (D)-1: an acid diffusion inhibitor represented by the following chemical formula (D)-1. (S)-1: A mixed solvent of propylene glycol monomethyl ether acetate/propylene glycol monomethyl ether=40/60 (mass ratio).

Figure 02_image167
Figure 02_image167

Figure 02_image169
Figure 02_image169

Figure 02_image171
Figure 02_image171

<阻劑組成物之評估> 使用所得的阻劑組成物形成阻劑圖型,分別依以下方式進行感度(Eop)、解析性及LWR等的各種評估。<Evaluation of resist composition> A resist pattern was formed using the obtained resist composition, and various evaluations, such as sensitivity (Eop), resolution, and LWR, were performed as follows.

[阻劑圖型形成] 將各例的阻劑組成物分別使用旋轉塗佈器,塗佈於施有六甲基二矽氮烷(HMDS)處理的矽基板上,於加熱板上、溫度110℃下,進行60秒鐘的預燒焙(PAB)處理後,經乾燥處理,形成膜厚50nm的阻劑膜。其次,使用電子線描繪裝置JEOL-JBX-9300FS(日本電子股份有限公司製),於加速電壓100kV、標靶尺寸為線路寬50nm的1:1線路與空間圖型(以下,亦稱為「LS圖型」)下,對前述阻劑膜進行描繪(曝光)後,於110℃下,進行60秒鐘的曝光後加熱(PEB)處理。 其次,於23℃下,使用2.38質量%氫氧化四甲基銨(TMAH)水溶液「NMD-3」(商品名、東京應化工業股份有限公司製),進行60秒鐘的鹼顯影之後,再使用純水施以15秒鐘之水洗滌。結果形成線路寬50nm的1:1之LS圖型。[Resist patterning] Use a spin coater to coat the resist composition of each example on a silicon substrate treated with hexamethyldisilazane (HMDS), and place it on a heating plate at a temperature of 110°C for 60 seconds After the pre-baking (PAB) treatment, it is dried to form a resist film with a film thickness of 50 nm. Next, using the electronic line drawing device JEOL-JBX-9300FS (manufactured by Japan Electronics Co., Ltd.), at an acceleration voltage of 100kV and a target size of 50nm in line width, a 1:1 line and space pattern (hereinafter also referred to as "LS") Pattern"), after drawing (exposure) the aforementioned resist film, a post-exposure heating (PEB) treatment was performed at 110° C. for 60 seconds. Next, after performing alkali development for 60 seconds at 23°C using a 2.38% by mass tetramethylammonium hydroxide (TMAH) aqueous solution "NMD-3" (trade name, manufactured by Tokyo Ohka Kogyo Co., Ltd.), Rinse with pure water for 15 seconds. As a result, a 1:1 LS pattern with a line width of 50nm was formed.

[最佳曝光量(Eop)之評估] 求取依前述阻劑圖型形成方法形成標靶尺寸的LS圖型之最佳曝光量Eop(μC/cm2 )。其結果係如表4及5所示。[Evaluation of Optimum Exposure (Eop)] Calculate the optimum exposure Eop (μC/cm 2 ) for forming an LS pattern with a target size according to the aforementioned resist patterning method. The results are shown in Tables 4 and 5.

[解析性之評估] 於上述Eop中之臨界解析度,具體而言,為使用掃描型電子顯微鏡S-9380(日立高科技公司製),觀察由最佳曝光量Eop開始少量逐漸增大曝光量以形成LS圖型之際,未倒塌而可解析的圖型之最小尺寸。其結果係如表4及5所示。[Analytical evaluation] Specifically, the critical resolution in the above-mentioned Eop is to use a scanning electron microscope S-9380 (manufactured by Hitachi High-Tech Co., Ltd.) to observe the LS pattern formed by gradually increasing the exposure amount starting from the optimal exposure amount Eop. In practice, the minimum size of a graph that is not collapsed and can be resolved. The results are shown in Tables 4 and 5.

[LWR(Line Wise Roughness)之評估] 於上述[阻劑圖型之形成]所形成的LS圖型,求取標示LWR尺度的3σ。「3σ」為,使用掃描型電子顯微鏡(加速電壓800V、商品名:S-9380、日立高科技公司製),測定400處線路長度方向的線之位置,將由該測定結果所求得的標準偏差(σ)的3倍值(3σ)(單位:nm)標記如表4及5所示。該3σ之值越小時,表示可製得線路側壁的粗糙度更小、寬度更均勻的LS圖型之意。[Evaluation of LWR (Line Wise Roughness)] For the LS pattern formed in the above [Formation of Resist Pattern], calculate the 3σ indicating the LWR scale. "3σ" is the standard deviation obtained from measuring the position of the line in the line length direction at 400 points using a scanning electron microscope (accelerating voltage 800V, product name: S-9380, manufactured by Hitachi High-Tech Co., Ltd.) The triple value (3σ) (unit: nm) of (σ) is marked as shown in Tables 4 and 5. The smaller the value of 3σ, the smaller the roughness of the line sidewall and the more uniform width of the LS pattern can be obtained.

Figure 02_image173
Figure 02_image173

Figure 02_image175
Figure 02_image175

由表5及6所示結果,確認使用本發明的實施例1~18的阻劑組成物,如下所示般,皆具有良好的感度、解析性及LWR。 比較例1~4的阻劑組成物中,(B)成份除使用式(b-1)中之R101 為不含有可具有取代基的芳香環之烴基的化合物以外,其他皆與實施例1~9的阻劑組成物為相同的組成內容。實施例1~9的阻劑組成物,與比較例1~4的阻劑組成物相比較時,確認感度、解析性及LWR等皆已獲得改善。 比較例5~7的阻劑組成物中,(B)成份除使用式(b-1)中之R101 為不含有可具有取代基的芳香環之烴基的化合物以外,其他分別與實施例10~12的阻劑組成物為相同的組成內容。實施例10~12的阻劑組成物,分別與比較例5~7的阻劑組成物相比較時,確認感度、解析性及LWR等皆已獲得改善。 實施例1、13~16的阻劑組成物,與(A)成份以外皆為相同組成內容的比較例8及9的阻劑組成物相比較時,確認解析性及LWR皆已獲得改善。又,實施例1、13~16的阻劑組成物,確認具有較比較例8及9的阻劑組成物為同等以上的感度。 比較例8及9的阻劑組成物中,(A)成份,除使用具有分別對應於實施例1及13的阻劑組成物之(A)成份中的結構單位(a0)之結構單位的聚合物以外,其他分別與實施例1及13的阻劑組成物具有相同之組成內容。實施例1及13的阻劑組成物,分別與比較例8及9的阻劑組成物相比較時,確認於解析性及LWR皆已獲得改善。又,實施例1及13的阻劑組成物,確認分別具有較比較例8及9的阻劑組成物為同等以上的感度。 比較例10及11的阻劑組成物中,(A)成份,除使用具有分別對應於實施例17及18的阻劑組成物之(A)成份中的結構單位(a0)之結構單位的聚合物以外,其他分別與實施例17及18的阻劑組成物具有相同之組成內容。實施例17及18的阻劑組成物,分別與比較例10及11的阻劑組成物相比較時,確認感度、解析性及LWR等皆已獲得改善。From the results shown in Tables 5 and 6, it was confirmed that the resist compositions using Examples 1 to 18 of the present invention had good sensitivity, resolution and LWR as shown below. In the resist compositions of Comparative Examples 1 to 4, the (B) component was the same as in Example 1 except that R 101 in the formula (b-1) is a hydrocarbon group that does not contain an aromatic ring that may have a substituent. The resist compositions of ~9 have the same composition content. When the resist compositions of Examples 1-9 were compared with the resist compositions of Comparative Examples 1-4, it was confirmed that the sensitivity, resolution, and LWR were all improved. In the resist compositions of Comparative Examples 5 to 7, the components (B) were the same as those in Example 10, except that R 101 in the formula (b-1) was a hydrocarbon group that did not contain an aromatic ring that may have a substituent. The resist compositions of ~12 have the same composition content. When the resist compositions of Examples 10-12 were compared with the resist compositions of Comparative Examples 5-7, it was confirmed that the sensitivity, resolution and LWR were all improved. When the resist compositions of Examples 1 and 13 to 16 were compared with the resist compositions of Comparative Examples 8 and 9, which had the same composition except for the component (A), it was confirmed that both resolution and LWR were improved. In addition, it was confirmed that the resist compositions of Examples 1 and 13 to 16 had a sensitivity equal to or higher than that of the resist compositions of Comparative Examples 8 and 9. In the resist compositions of Comparative Examples 8 and 9, the (A) component was used except the polymerization of the structural unit (a0) corresponding to the structural unit (a0) in the (A) component of the resist compositions of Examples 1 and 13, respectively. Other than the resist compositions of Examples 1 and 13, the others have the same composition content. When the resist compositions of Examples 1 and 13 were compared with the resist compositions of Comparative Examples 8 and 9, it was confirmed that both resolution and LWR were improved. In addition, it was confirmed that the resist compositions of Examples 1 and 13 have sensitivities equivalent to or higher than those of the resist compositions of Comparative Examples 8 and 9, respectively. In the resist compositions of Comparative Examples 10 and 11, the (A) component, except for the polymerization of the structural unit (a0) corresponding to the structural unit (a0) in the (A) component of the resist compositions of Examples 17 and 18, was used. Except for the resist composition of Examples 17 and 18, the others have the same composition content. When the resist compositions of Examples 17 and 18 were compared with the resist compositions of Comparative Examples 10 and 11, it was confirmed that the sensitivity, resolution and LWR were all improved.

以上,為說明本發明之較佳實施例,但本發明並不受該些實施例所限定。於不超出本發明主旨之範圍,皆可進行構成內容之添加、省略、取代,及其他的變更。本發明並不受前述說明內容所限定,僅受所附之申請專利範圍之限定。The above is to illustrate the preferred embodiments of the present invention, but the present invention is not limited by these embodiments. Additions, omissions, substitutions, and other changes of constituent contents are all possible within the scope not departing from the gist of the present invention. The present invention is not limited by the foregoing description, but only by the scope of the appended patent application.

Figure 108120875-A0101-11-0003-3
Figure 108120875-A0101-11-0003-3

Claims (4)

一種阻劑組成物,其為經由曝光而產生酸,且,經由酸之作用而對顯影液之溶解性產生變化的阻劑組成物,其含有:經由酸之作用而對顯影液之溶解性產生變化的基材成份(A),與經由曝光而產生酸之酸產生劑成份(B),又前述基材成份(A)含有具有下述通式(a0)所表示的結構單位(a0)之樹脂成份(A1),前述酸產生劑成份(B)含有由下述通式(b-1)所表示之化合物(b-1)、下述通式(b-2)所表示之化合物(b-2)及下述通式(b-3)所表示之化合物(b-3)所成之群所選出之至少1種;
Figure 108120875-A0305-02-0171-1
[式中,R0為氫原子、碳數1~5之烷基、鹵素原子或碳數1~5之鹵化烷基;Vax0為單鍵或2價之連結基;Wa為可具有取代基的2價之芳香族烴基;Va0為可具有醚鍵結的 2價之烴基;na0為0~2之整數;Ra00為下述式(a1-r-2)所表示之酸解離性基];
Figure 108120875-A0305-02-0172-2
[式中,Ra’4~Ra’6各別獨立為可具有取代基之徑基,且Ra’5、Ra’6可相互鍵結而形成環];
Figure 108120875-A0305-02-0172-3
[式中,R101、R104及R106,各別獨立為含有可具有取代基的芳香環之烴基;R105、R107及R108,各別獨立為可具有取代基之環式基、可具有取代基之鏈狀烷基,或可具有取代基之鏈狀烯基;R102為氟原子或碳數1~5之氟化烷基;Y101為單鍵或含有氧原子的2價之連結基;V101~V103各別獨立為單鍵、伸烷基或氟化伸烷基;L101~L102各別獨立為單鍵或氧原子;L103~L105各別獨立為單鍵、-CO-或-SO2-;m為1以上之整數,且M’m+為m價之鎓陽離子]。
A resist composition, which is a resist composition that generates acid through exposure and changes the solubility of the developing solution through the action of the acid, comprising: The substrate component (A) that changes, and the acid generator component (B) that generates acid through exposure, and the aforementioned substrate component (A) contains a structural unit (a0) represented by the following general formula (a0) The resin component (A1), the acid generator component (B) contains a compound (b-1) represented by the following general formula (b-1), a compound (b-1) represented by the following general formula (b-2) -2) and at least one selected from the group consisting of compounds (b-3) represented by the following general formula (b-3);
Figure 108120875-A0305-02-0171-1
[In the formula, R 0 is a hydrogen atom, an alkyl group with 1 to 5 carbons, a halogen atom or a halogenated alkyl group with 1 to 5 carbons; Va x0 is a single bond or a divalent linking group; Wa is an optional substituent A divalent aromatic hydrocarbon group; Va 0 is a divalent hydrocarbon group that may have an ether bond; n a0 is an integer from 0 to 2; Ra 00 is the acid dissociation represented by the following formula (a1-r-2) base];
Figure 108120875-A0305-02-0172-2
[In the formula, Ra' 4 ~ Ra' 6 are each independently a hydroxyl group that may have a substituent, and Ra' 5 and Ra' 6 can be bonded to each other to form a ring];
Figure 108120875-A0305-02-0172-3
[wherein, R 101 , R 104 and R 106 are each independently a hydrocarbon group containing an aromatic ring that may have a substituent; R 105 , R 107 and R 108 are each independently a cyclic group that may have a substituent, A chained alkyl group that may have a substituent, or a chained alkenyl group that may have a substituent; R 102 is a fluorine atom or a fluorinated alkyl group with 1 to 5 carbon atoms; Y 101 is a single bond or a divalent group containing an oxygen atom V 101 ~ V 103 are each independently a single bond, alkylene or fluorinated alkylene; L 101 ~ L 102 are each independently a single bond or an oxygen atom; L 103 ~ L 105 are each independently Single bond, -CO- or -SO 2 -; m is an integer of 1 or more, and M' m+ is an m-valent onium cation].
如請求項1之阻劑組成物,其中,前述樹脂成份(A1)尚具有下述通式(a10-1)所表示的結構單位(a10);
Figure 108120875-A0305-02-0173-4
[式中,R為氫原子、碳數1~5之烷基或碳數1~5之鹵化烷基;Yax1為單鍵或2價之連結基;Wax1為(nax1+1)價之芳香族烴基;nax1為1以上之整數]。
The resist composition according to claim 1, wherein the aforementioned resin component (A1) still has a structural unit (a10) represented by the following general formula (a10-1);
Figure 108120875-A0305-02-0173-4
[wherein, R is a hydrogen atom, an alkyl group with 1 to 5 carbons or a halogenated alkyl group with 1 to 5 carbons; Ya x1 is a single bond or a linking group with 2 valences; Wa x1 is a valence of (n ax1 +1) aromatic hydrocarbon group; n ax1 is an integer of 1 or more].
一種阻劑圖型形成方法,其具有:使用如請求項1之阻劑組成物於支撐體上形成阻劑膜之步驟、使前述阻劑膜曝光之步驟,及使前述曝光後的阻劑膜顯影而形成阻劑圖型之步驟。 A method for forming a resist pattern, comprising: a step of forming a resist film on a support using the resist composition according to claim 1, a step of exposing the resist film, and exposing the exposed resist film to The step of developing to form a resist pattern. 如請求項3之阻劑圖型形成方法,其中於前述使阻劑膜曝光之步驟中,係使用EUV(極紫外線)或EB(電子線)對前述阻劑膜進行曝光。 The method for forming a resist pattern according to claim 3, wherein in the step of exposing the resist film, the resist film is exposed using EUV (extreme ultraviolet light) or EB (electron beam).
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