TWI805126B - A system for controlling a plasma density and a method thereof - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
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- H01J37/32—Gas-filled discharge tubes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
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Abstract
Description
本發明是有關於一種離子束蝕刻領域,且特別是有關於一種電漿密度控制系統及方法。 The invention relates to the field of ion beam etching, and in particular to a plasma density control system and method.
本申請要求於2021年1月4日提交中國專利局、申請號為202110002170.3、申請名稱為「一種電漿密度控制系統及方法」的中國專利申請的優先權,其全部內容通過引用結合在本申請中。 This application claims the priority of the Chinese patent application with the application number 202110002170.3 and the application title "A Plasma Density Control System and Method" filed with the China Patent Office on January 4, 2021, the entire contents of which are incorporated by reference in this application middle.
離子束蝕刻是可用於蝕刻加工各種金屬(Ni鎳、Cu銅、Au金、Al鋁、Pb鉛、Pt鉑、Ti鈦等)及其合金,以及非金屬、氧化物、氮化物、碳化物、半導體、聚合物、陶瓷、紅外和超導等材料。原理上是利用輝光放電原理將氬氣分解為氬離子,氬離子經過陽極電場的加速對樣品表面進行物理轟擊,以達到蝕刻的作用。蝕刻過程即把Ar氬氣充入離子源放電室並使其電離形成電漿,然後由柵極將離子呈束狀引出並加速,具有一定能量的離子束進入工作室,射向固體表面轟擊固體表面原子,使材料原子發 生濺射,達到蝕刻目的,屬純物理蝕刻。由於離子不是由輝光放電產生,而是由獨立的離子源發射出惰性氣體離子並經電場加速後再進入放入樣品的真空室,離子束源與樣品室的真空度可分別達到各自的最佳狀態,膜的純度很高。 Ion beam etching can be used for etching various metals (Ni nickel, Cu copper, Au gold, Al aluminum, Pb lead, Pt platinum, Ti titanium, etc.) and their alloys, as well as non-metals, oxides, nitrides, carbides, Materials such as semiconductors, polymers, ceramics, infrared and superconductivity. The principle is to use the principle of glow discharge to decompose argon gas into argon ions, and the argon ions are accelerated by the anode electric field to physically bombard the surface of the sample to achieve the effect of etching. The etching process is to fill the Argon gas into the discharge chamber of the ion source and ionize it to form a plasma, then the ions are drawn out and accelerated by the grid in a beam shape, and the ion beam with a certain energy enters the working chamber and shoots to the solid surface to bombard the solid surface atoms, making the material atoms Sputtering is used to achieve the purpose of etching, which is pure physical etching. Since the ions are not generated by glow discharge, but are emitted by an independent ion source, the inert gas ions are accelerated by an electric field and then enter the vacuum chamber where the sample is placed. The vacuum degrees of the ion beam source and the sample chamber can reach their respective optimal levels. State, the purity of the membrane is very high.
離子源是將中性原子或分子電離並從中提取離子束流的設備,現有的離子源主要包括考夫曼離子源、射頻離子源、電子回旋共振(Electron Cyclotron Resonance,ECR)離子源和霍爾無柵(End Hall)離子源,其中,射頻離子源在真空環境下,充滿真空室的氣體通過電場和磁場的相互作用而被電離,並且通過電場和磁場的作用而釋放出離子,是利用射頻感應產生電漿,靜電加速離子,具有無極放電,工作長時間穩定、均勻區大、離子束密可以精確控制、污染小等特點,在離子束蝕刻過程中得到廣泛應用。 Ion sources are devices that ionize neutral atoms or molecules and extract ion beams from them. Existing ion sources mainly include Kaufmann ion sources, radio frequency ion sources, Electron Cyclotron Resonance (ECR) ion sources and Hall The gridless (End Hall) ion source, in which the radio frequency ion source is in a vacuum environment, the gas filled with the vacuum chamber is ionized through the interaction of the electric field and the magnetic field, and the ions are released through the action of the electric field and the magnetic field. Plasma is generated by induction, and ions are accelerated by static electricity. It has the characteristics of stepless discharge, long-term stability, large uniform area, precise control of ion beam density, and low pollution. It is widely used in ion beam etching.
在離子束蝕刻中,離子源在工作狀態下,由於製程條件的不同,其蝕刻結果存在著較大的差異性,在射頻電源的激勵下,放電腔內電漿密度呈現中間高、邊緣低的趨勢(見圖1),為保證蝕刻均勻性,屏柵上小孔大小由中間向邊緣逐漸增加,以保證邊緣區通過的離子通量大(見圖2和圖3),使得抽出的離子束密度均勻分佈,但當製程條件改變時,離子源抽出的離子束流密度邊緣區會增加(見圖4),造成晶圓表面蝕刻的不均勻性(見圖5(a)-5(b)),影響蝕刻效果。在圖3中,橫坐標為徑向距離,縱坐標為Grid(柵格)孔徑尺寸也即屏柵環狀孔尺寸。 In ion beam etching, when the ion source is working, due to the different process conditions, there are great differences in the etching results. Under the excitation of radio frequency power, the plasma density in the discharge chamber is high in the middle and low at the edge. Trend (see Figure 1), in order to ensure the uniformity of etching, the size of the small holes on the screen gradually increases from the middle to the edge, so as to ensure that the ion flux passing through the edge area is large (see Figure 2 and Figure 3), so that the extracted ion beam The density is evenly distributed, but when the process conditions change, the ion beam current density edge area extracted by the ion source will increase (see Figure 4), resulting in uneven etching of the wafer surface (see Figure 5(a)-5(b) ), affecting the etching effect. In FIG. 3 , the abscissa is the radial distance, and the ordinate is the size of the aperture of the Grid (grid), that is, the size of the annular hole of the screen.
本申請各示例性實施例提供一種電漿密度控制系統,該電漿密度控制系統及方法能對離子源引出的離子束密度進行測量,並對電漿密度進行實時控制,有效解決由於製程條件改變而導致的蝕刻不均勻問題,並減小生產成本。 Each exemplary embodiment of the present application provides a plasma density control system. The plasma density control system and method can measure the density of the ion beam drawn out by the ion source, and control the plasma density in real time, effectively solving the problem caused by changes in process conditions. The problem of uneven etching is caused, and the production cost is reduced.
本申請各示例性實施例提供一種電漿密度控制系統,包括反應腔室;離子源,包括:從外至內同軸設置的離子源腔和放電腔;和屏柵,所述屏柵設置在所述離子源腔的尾端,在所述屏柵上沿徑向佈設有N組屏柵環狀孔,其中,N為整數且大於或等於1;法拉第杯組,包括:法拉第杯安裝架,設置在與所述屏柵正對應的所述反應腔室壁面上;和至少N個法拉第杯,所述N個法拉第杯與所述N組屏柵環狀孔的位置相對應;以及擋片機構,包括:驅動裝置控制器和至少兩組擋片組件。每組擋片組件均包括多個擋片和擋片驅動裝置。多個擋片沿放電腔尾端周向均勻佈設。每個擋片均能在擋片驅動裝置的驅動下,旋轉伸入放電腔內,遮擋進入相應的屏柵環狀孔的電漿。擋片組件間的擋片交替佈設,擋片組件間的擋片形狀不同。所有擋片驅動裝置和所有法拉第杯均與驅動裝置控制器相連接。在一實施例中,法拉第杯安裝架為直條形架,法拉第杯的數量為N+1個。其中一個法拉第杯位於反應腔室的中心軸線上,其餘N個法拉第杯共線安裝在直條形架上,且與N個屏柵環狀孔的位置相對應。 Various exemplary embodiments of the present application provide a plasma density control system, including a reaction chamber; an ion source, including: an ion source chamber and a discharge chamber coaxially arranged from outside to inside; and a screen grid, the screen grid is arranged on the The tail end of the ion source cavity is provided with N groups of screen ring-shaped holes in the radial direction on the screen, wherein N is an integer and greater than or equal to 1; the Faraday cup set includes: a Faraday cup mounting frame, set On the wall of the reaction chamber directly corresponding to the screen grid; and at least N Faraday cups, the N Faraday cups correspond to the positions of the N groups of screen grid ring holes; and a shutter mechanism, It includes: a drive device controller and at least two sets of blanking components. Each shutter assembly includes a plurality of shutters and a shutter driving device. A plurality of baffles are evenly arranged along the circumference of the tail end of the discharge cavity. Each baffle can be driven by the baffle driving device to rotate and extend into the discharge chamber to block the plasma entering the corresponding screen grid annular hole. The baffles between the baffle components are arranged alternately, and the shapes of the baffles between the baffle assemblies are different. All shutter drives and all Faraday cups are connected to the drive controller. In one embodiment, the Faraday cup mounting frame is a straight frame, and the number of Faraday cups is N+1. One of the Faraday cups is located on the central axis of the reaction chamber, and the remaining N Faraday cups are collinearly installed on the straight bar frame and correspond to the positions of the N ring-shaped holes of the screen.
在一實施例中,法拉第杯安裝架具有L型架,L型架的拐角位於反應腔室的中心軸線上。其中一個法拉第杯安裝在L型架的拐角上,L型架的兩條直角邊上各安裝N個法拉第杯。2N個法拉第杯位於屏柵的不同半徑位置處,且分別與N個屏柵環狀孔的位置相對應。 In one embodiment, the Faraday cup mount has an L-shaped frame, the corners of which are located on the central axis of the reaction chamber. One of the Faraday cups is installed on the corner of the L-shaped frame, and N Faraday cups are respectively installed on the two right-angle sides of the L-shaped frame. The 2N Faraday cups are located at different radial positions of the screen grid, and respectively correspond to the positions of the N screen grid annular holes.
在一實施例中,擋片機構包括兩組擋片組件,分別為第一擋片組件和第二擋片組件。第一擋片組件包括多個第一擋片和第一擋片驅動裝置。第二擋片組件包括多個第二擋片和第二擋片驅動裝置。每個第一擋片的截面均為中心寬、邊緣窄的倒錐形或倒梯形結構。每個第二擋片的截面均為邊緣寬、中心窄的錐形或梯形結構。 In one embodiment, the shutter mechanism includes two groups of shutter assemblies, namely a first shutter assembly and a second shutter assembly. The first shutter assembly includes a plurality of first shutters and a first shutter driving device. The second shutter assembly includes a plurality of second shutters and a second shutter driving device. The cross-section of each first blocking plate is an inverted cone or an inverted trapezoidal structure with a wide center and narrow edges. The cross-section of each second blocking sheet is a tapered or trapezoidal structure with wide edges and narrow center.
在一實施例中,放電腔通過放電腔支撐座安裝在離子源的離子源腔上。每個第一擋片和每個第二擋片的邊緣端均轉動安裝在放電腔支撐座的端面上。 In one embodiment, the discharge chamber is installed on the ion source chamber of the ion source through the discharge chamber support base. The edge ends of each first blocking sheet and each second blocking sheet are rotatably mounted on the end surface of the supporting seat of the discharge chamber.
在一實施例中,每個第一擋片和每個第二擋片的長度相同,每個第一擋片和每個第二擋片的長度相同,均為1/4r~1/2r;其中,r為屏柵半徑。 In one embodiment, the lengths of each first blocking piece and each second blocking piece are the same, and the lengths of each first blocking piece and each second blocking piece are the same, which are 1/4r~1/2r; Among them, r is the radius of the screen grid.
在一實施例中,擋片驅動裝置為旋轉氣缸或電機。 In one embodiment, the shutter driving device is a rotary cylinder or a motor.
本申請各示例性實施例還提供了一種電漿密度控制方法,包括如下步驟。 Each exemplary embodiment of the present application also provides a plasma density control method, including the following steps.
步驟1,檢測電漿訊號:其中,蝕刻前,開啟離子源,位於放電腔內的電漿經屏柵的屏柵環狀孔後,聚焦形成離子束,每 個法拉第杯將檢測自身徑向位置處的電漿訊號。並將檢測到的電漿訊號轉換為電流訊號,反饋給驅動裝置控制器。 Step 1, detecting the plasma signal: wherein, before etching, the ion source is turned on, and the plasma in the discharge chamber is focused to form an ion beam after passing through the circular hole of the screen grid. A Faraday cup will detect the plasma signal at its own radial position. The detected plasma signal is converted into a current signal and fed back to the controller of the drive device.
步驟2,判斷電漿密度均勻性:其中,驅動裝置控制器根據接收到的所有電流訊息,讀取最大電流與最小電流,並將最大電流與最小電流進行對比,當最大電流與最小電流的差值小於設定值時,判斷反應腔室內的電漿密度為均勻。否則,判斷電漿密度為不均勻。 Step 2, judging the uniformity of plasma density: Among them, the controller of the driving device reads the maximum current and the minimum current according to all the current messages received, and compares the maximum current with the minimum current. When the difference between the maximum current and the minimum current When the value is less than the set value, it is judged that the plasma density in the reaction chamber is uniform. Otherwise, it is judged that the plasma density is not uniform.
步驟3,控制電漿密度,具體包括如下步驟。
步驟31,確定遮擋時機:其中,當步驟2判斷為電漿密度不均勻時,驅動裝置控制器同時讀取最大電流對應的法拉第杯的所處位置。
步驟32,遮擋:其中,驅動裝置控制器根據最大電流對應的法拉第杯所處位置,確定啟用的擋片組件,在擋片驅動裝置的控制下旋轉擋片組件的擋片,對電漿體密度高的區域進行遮擋。當擋片旋轉至徑向時,與最大電流法拉第杯對應的寬度最大。 Step 32, shielding: wherein, the controller of the driving device determines the activated shutter assembly according to the position of the Faraday cup corresponding to the maximum current, rotates the shutter of the shutter assembly under the control of the shutter driving device, and adjusts the density of the plasma High areas are blocked. When the baffle rotates to the radial direction, the width corresponding to the maximum current Faraday cup is the largest.
步驟33,再次檢測電漿密度:其中,在擋片旋轉遮擋的同時,法拉第杯實時檢測電漿密度,驅動裝置控制器按照步驟2進行電漿密度均勻性的判斷,直至電漿密度均勻,擋片停止旋轉。 Step 33, detect the plasma density again: wherein, while the blocker rotates to block, the Faraday cup detects the plasma density in real time, and the controller of the drive device judges the uniformity of the plasma density according to step 2 until the plasma density is uniform, and the blocker The slice stops spinning.
步驟32中,遮擋的步驟包括。 In step 32, the step of occlusion includes.
步驟32A,當最大電流對應的法拉第杯位於邊緣處時,驅動裝置控制器控制第二擋片驅動裝置帶動第二擋片進行遮擋。 Step 32A, when the Faraday cup corresponding to the maximum current is located at the edge, the driving device controller controls the second shutter driving device to drive the second shutter to shield.
步驟32,當最大電流對應的法拉第杯在靠近內側中心 時,驅動裝置控制器控制第一擋片驅動裝置帶動第一擋片進行遮擋。 Step 32, when the maximum current corresponds to the Faraday cup near the inner center , the driving device controller controls the first shutter driving device to drive the first shutter to block.
步驟33中,當第二擋片驅動裝置旋轉90°後,邊緣電漿密度仍然最大且電漿密度均勻性判斷為不均勻時,驅動裝置控制器將控制第一擋片驅動裝置進行運動,以遮蔽更多的邊緣電漿,直至電漿密度均勻。 In step 33, when the edge plasma density is still maximum and the uniformity of the plasma density is determined to be uneven after the second shutter driving device rotates 90°, the driving device controller will control the first shutter driving device to move to Mask more edge plasma until the plasma density is uniform.
本申請採用法拉第杯組對離子源引出的離子束密度進行測量,通過擋片機構中擋片的旋轉,對電漿密度進行實時控制,有效解決由於製程條件改變而導致的蝕刻不均勻問題,並減小生產成本。 This application uses a Faraday cup set to measure the ion beam density drawn from the ion source, and controls the plasma density in real time through the rotation of the baffle in the baffle mechanism, effectively solving the problem of uneven etching caused by changes in process conditions, and Reduce production costs.
1:離子源 1: ion source
2:反應腔室 2: Reaction chamber
3:法拉第杯組 3: Faraday Cup Group
31:法拉第杯 31: Faraday Cup
4:下電極 4: Bottom electrode
5:晶圓 5: Wafer
6:擋板 6: Baffle
61:擋板驅動裝置 61: Baffle driving device
7:驅動裝置控制器 7: Drive controller
71:第一擋片驅動裝置 71: The first block drive device
72:第二擋片驅動裝置 72: The second shutter driving device
81:第一擋片 81: The first block
82:第二擋片 82:Second block
9:放電腔支撐座 9: Discharge chamber support seat
11:放電腔 11: discharge cavity
12:屏柵 12: screen grid
13:加速柵 13: Acceleration grid
14:離子源控制器 14: Ion source controller
圖1顯示了現有技術中放電腔內電漿密度分佈示意圖。 Fig. 1 shows a schematic diagram of plasma density distribution in a discharge chamber in the prior art.
圖2顯示了現有技術中屏柵的結構示意圖。 Fig. 2 shows a schematic structural diagram of a screen grid in the prior art.
圖3顯示了現有技術中屏柵環狀孔的徑向分佈位置示意圖。 Fig. 3 shows a schematic diagram of the radial distribution positions of the screen grid annular holes in the prior art.
圖4顯示了現有技術中反應腔室內離子束的密度分佈示意圖。 Fig. 4 shows a schematic diagram of the density distribution of ion beams in the reaction chamber in the prior art.
圖5(a)和5(b)顯示了現有技術中晶圓表面蝕刻不均勻性的兩種效果圖。 5(a) and 5(b) show two effect diagrams of wafer surface etching non-uniformity in the prior art.
圖6顯示了本申請一實施例的電漿密度控制系統的結構示意圖。 Fig. 6 shows a schematic structural diagram of a plasma density control system according to an embodiment of the present application.
圖7顯示了本申請一實施例的一種電漿密度控制系統中擋片組件的安裝位置示意圖。 Fig. 7 shows a schematic diagram of the installation position of the baffle assembly in a plasma density control system according to an embodiment of the present application.
圖8顯示了本申請一實施例的中法拉第杯安裝架為直條形架的結構示意圖。 FIG. 8 shows a schematic structural diagram of a straight bar-shaped mounting frame for the middle Faraday cup according to an embodiment of the present application.
圖9顯示了本申請一實施例的中法拉第杯安裝架為L型架的結構示意圖。 FIG. 9 shows a schematic structural diagram of a middle Faraday cup mounting frame in an L-shaped frame according to an embodiment of the present application.
圖10顯示了本申請一實施例的中擋片的分佈示意圖。 Fig. 10 shows a schematic diagram of the distribution of the middle blocking pieces according to an embodiment of the present application.
圖11顯示了本申請一實施例的第一擋片旋轉遮擋時的結構示意圖。 Fig. 11 shows a schematic structural view of the first blocking sheet when rotating and blocking according to an embodiment of the present application.
圖12顯示了本申請一實施例的第二擋片旋轉遮擋時的結構示意圖。 Fig. 12 shows a schematic structural view of the second blocking sheet when rotating and blocking according to an embodiment of the present application.
圖13顯示了本申請一實施例的第二擋片主遮擋,第一擋片輔助遮擋時的結構示意圖。 Fig. 13 shows a schematic diagram of the structure of the second shutter for main blocking and the first shutter for auxiliary blocking according to an embodiment of the present application.
下面將結合本申請實施例中的所附圖式,對本申請實施例中的技術方案進行清楚、完整地描述。下面描述中的所附圖式僅僅是本申請的一些實施例,對於本領域普通技術人員來講,在不付出創造性勞動的前提下,還可以根據這些所附圖式獲得其他的圖式。以下所描述的實施例是本申請一部分實施例,而不是全部的實施例。基於本申請中的實施例,本領域技術人員在沒有做出創造性勞動前提下所獲得的所有其他實施例,都屬於本申請保 護的範圍。 The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present application. The attached drawings in the following description are only some embodiments of the present application, and those skilled in the art can obtain other drawings according to these attached drawings without creative efforts. The embodiments described below are some of the embodiments of the present application, but not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the protection of this application. range of protection.
應當理解,本申請的說明書和申請專利範圍中使用的術語「包括」和「包含」指示所描述特徵、整體、步驟、操作、元件和/或組件的存在,但並不排除一個或多個其它特徵、整體、步驟、操作、元件、組件和/或其集合的存在或添加。 It should be understood that the terms "comprising" and "comprising" used in the specification and claims of the present application indicate the presence of described features, integers, steps, operations, elements and/or components, but do not exclude one or more other Presence or addition of features, integers, steps, operations, elements, components and/or collections thereof.
本申請的描述中,需要理解的是,術語「左側」、「右側」、「上部」、「下部」等指示的方位或位置關係為基於圖式所示的方位或位置關係,僅是為了便於描述本申請和簡化描述,而不是指示或暗示所指的裝置或元件必須具有特定的方位、以特定的方位構造和操作,「第一」、「第二」等並不表示零部件的重要程度,因此不能理解為對本申請的限制。本實施例中採用的具體尺寸只是為了舉例說明技術方案,並不限制本申請的保護範圍。 In the description of the present application, it should be understood that the orientation or positional relationship indicated by the terms "left side", "right side", "upper", "lower" etc. is based on the orientation or positional relationship shown in the drawings, and is only for convenience describe the application and simplify the description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and "first", "second", etc. do not indicate the degree of importance of parts , and therefore cannot be construed as limiting the application. The specific dimensions used in this embodiment are only for illustrating the technical solution, and do not limit the scope of protection of the present application.
目前,傳統的獲取良好束流密度均勻性的方法有兩種,一種是調整離子源的參數與設計結構;一種是在離子源蝕刻樣品之間建立異形的物理遮擋機構,通過不斷調整物理遮擋機構的幾何形狀,與離子束密度特徵進行抵消,在每次設計出遮擋裝置後,都需要測試均勻性,如未達到修正效果,再針對性的對物理遮擋裝置的幾何形狀進行加工,測試周期長,生產成本高。因此,對離子源引出的離子束密度進行測量,並對電漿密度進行實時控制是十分有必要的。本申請提出一種電漿密度控制系統,可以有效的解決上述提出的由於製程條件改變而導致的蝕刻不均勻問題,並減小生產成本。 At present, there are two traditional methods to obtain good beam density uniformity, one is to adjust the parameters and design structure of the ion source; the other is to establish a special-shaped physical shielding mechanism between the ion source etching samples, and continuously adjust the physical shielding mechanism The geometric shape of the ion beam is offset with the ion beam density characteristics. After each shielding device is designed, the uniformity needs to be tested. If the correction effect is not achieved, the geometric shape of the physical shielding device will be processed in a targeted manner. The test period is long , high production cost. Therefore, it is very necessary to measure the ion beam density drawn from the ion source and to control the plasma density in real time. The present application proposes a plasma density control system, which can effectively solve the above-mentioned problem of uneven etching caused by changes in process conditions, and reduce production costs.
下面結合所附圖式和具體較佳實施方式對本申請作進一步詳細的說明。 The present application will be further described in detail below in conjunction with the accompanying drawings and specific preferred embodiments.
如圖6所示,一種電漿密度控制系統,包括離子源1、反應腔室2、擋片機構、擋板6和法拉第杯組3。
As shown in FIG. 6 , a plasma density control system includes an ion source 1 , a reaction chamber 2 , a baffle mechanism, a
離子源1同軸設置在反應腔室2的一側,離子源1包括離子源控制器14、以及從外至內同軸設置的離子源腔和放電腔11。
The ion source 1 is coaxially arranged on one side of the reaction chamber 2 , and the ion source 1 includes an
上述離子源控制器14用於控制離子源的製程參數。
The
在一實施例中,上述放電腔11通過放電腔支撐座9安裝在離子源腔的內壁面上。
In one embodiment, the
在離子源腔的尾端設置Grid柵格組件,Grid組件包括屏柵12和加速柵13。
A Grid grid assembly is arranged at the end of the ion source cavity, and the Grid assembly includes a
屏柵12和加速柵13均沿徑向佈設有N組屏柵環狀孔。為保證蝕刻均勻性,N組屏柵環狀孔的徑向高度由中間向邊緣逐漸增加,以保證邊緣區通過的離子通量大,如圖8所示。在圖8中,N=6,6組屏柵環狀孔的徑向高度由中間向邊緣分別為2.35mm、2.47mm、2.63mm、2.72mm、2.91mm和3.13mm。屏柵12上加正電聚焦電漿,加速柵13加負電將離子呈束狀引出並加速,電漿以離子束形式引出。
Both the
擋板6安裝在位於Grid組件下游的反應腔室頭部,用於遮擋N組屏柵環狀孔。在反應腔室2內設置有用於放置晶圓5的下電極4。
The
擋片機構包括驅動裝置控制器7和至少兩組擋片組件。
The shutter mechanism includes a
每組擋片組件均包括多個擋片和擋片驅動裝置。多個擋片均沿放電腔尾端周向均勻佈設。每個擋片均能在擋片驅動裝置的驅動下,旋轉伸入放電腔11內,遮擋進入屏柵環狀孔的電漿。擋片組件間的擋片交替佈設,擋片組件間的擋片形狀不同。
Each shutter assembly includes a plurality of shutters and a shutter driving device. A plurality of baffles are evenly arranged along the circumferential direction of the tail end of the discharge cavity. Each baffle can be driven by the baffle driving device to rotate and extend into the
在一實施例中,擋片組件優選為兩組,分別為第一擋片組件和第二擋片組件。 In an embodiment, there are preferably two groups of shutter assemblies, namely a first shutter assembly and a second shutter assembly.
第一擋片組件包括多個第一擋片81和第一擋片驅動裝置71。
The first flap assembly includes a plurality of
如圖10所示,每個第一擋片81的截面均優選為中心寬、邊緣窄的倒錐形或倒梯形結構等。
As shown in FIG. 10 , the cross section of each
如圖7所示,第一擋片81的邊緣端優選通過鉸接軸轉動安裝在放電腔支撐座尾端。
As shown in FIG. 7 , the edge end of the
如圖12所示,每個第一擋片81均能在第一擋片驅動裝置71的驅動下旋轉,第一擋片驅動裝置71可以為一個或兩個,也即第一擋片81可以單獨驅動,也可以有一個或多個第一擋片驅動裝置71同步驅動。
As shown in Figure 12, each first blocking
第二擋片組件包括多個第二擋片82和第二擋片驅動裝置72。如圖10所示,每個第二擋片82的截面均為邊緣寬、中心窄的錐形或梯形結構等。第二擋片82的邊緣端優選通過鉸接軸轉動安裝在放電腔支撐座9尾端。
The second shutter assembly includes a plurality of
上述第一擋片81和第二擋片82在放電腔支撐座9尾端沿周向交替佈設,可以均勻,也可以不均勻。
The above-mentioned first baffles 81 and
每個第一擋片81和每個第二擋片82的長度相同,均為1/4r~1/2r,進一步優選為1/3r;其中,r為屏柵半徑。
Each
每個擋片與屏柵12之間的軸向間距L優選為1mm~10mm;避免擋片位於屏柵12鞘層內,對離子源1裝置造成傷害,同時避免距離較大,引起電漿擴散。
The axial spacing L between each baffle and the
如圖11所示,每個第二擋片82均能在第二擋片驅動裝置72的驅動下旋轉,第二擋片驅動裝置72可以為一個或兩個,也即第二擋片82可以單獨驅動,也可以有一個或多個第二擋片驅動裝置72同步驅動。
As shown in Figure 11, each
作為替換,擋片組件也可以為三組、四組等。 Alternatively, there may be three groups, four groups, etc. of the shutter components.
上述擋片驅動裝置優選為旋轉氣缸或電機等。 The shutter driving device is preferably a rotary cylinder or a motor.
法拉第杯組包括法拉第杯安裝架和至少N個法拉第杯31。 The Faraday cup set includes a Faraday cup mounting frame and at least N Faraday cups 31 .
法拉第杯安裝架設置在與屏柵正對應的反應腔室壁面上。其中的N個法拉第杯與N組屏柵環狀孔的位置相對應。 The Faraday cup mounting frame is arranged on the wall of the reaction chamber corresponding to the screen grid. The N Faraday cups correspond to the positions of the N sets of screen grid annular holes.
本申請中,法拉第杯安裝架具有如下兩種優選實施例。 In this application, the Faraday cup mounting frame has the following two preferred embodiments.
實施例1:法拉第杯安裝架為直條形架Embodiment 1: The Faraday cup mounting frame is a straight frame
法拉第杯安裝架為直條形架,法拉第杯31的數量為N+1個。在本實施例中,由於屏柵環狀孔為六組,也即N=6,故而法拉第杯的數量為7個,如圖8所示,從中心向外側分別為法拉第杯1、法拉第杯2、法拉第杯3、法拉第杯4、法拉第杯5、法拉第杯6和法拉第杯7。
The Faraday cup mounting frame is a straight frame, and the number of Faraday cups 31 is N+1. In this embodiment, since there are six groups of annular holes in the screen grid, that is, N=6, the number of Faraday cups is 7, as shown in Figure 8, from the center to the outside are Faraday cup 1 and Faraday cup 2 ,
其中一個法拉第杯31(也即法拉第杯1)位於反應腔室2的中心軸線上,其餘N個法拉第杯31共線安裝在直條形架上,且與N個屏柵環狀孔的位置相對應。 One of the Faraday cups 31 (that is, the Faraday cup 1) is located on the central axis of the reaction chamber 2, and the remaining N Faraday cups 31 are collinearly installed on the straight bar frame, and are aligned with the positions of the N screen grid annular holes. correspond.
也即法拉第杯2、法拉第杯3、法拉第杯4、法拉第杯5、法拉第杯6和法拉第杯7分別與2.35mm、2.47mm、2.63mm、2.72mm、2.91mm和3.13mm的屏柵環狀孔相對應,從而保證屏柵12上不同孔徑所在區域的電漿密度均能夠得到有效測量。
That is, Faraday cup 2,
實施例2Example 2
如圖9所示,法拉第杯安裝架具有L型架(可以為十字形架),L型架的拐角位於反應腔室的中心軸線上。法拉第杯的數量優選為2N+1個。 As shown in FIG. 9 , the Faraday cup mounting frame has an L-shaped frame (which may be a cross-shaped frame), and the corners of the L-shaped frame are located on the central axis of the reaction chamber. The number of Faraday cups is preferably 2N+1.
其中一個法拉第杯31(也即法拉第杯1)安裝在L型架的拐角上,L型架的兩條直角邊上各安裝N個法拉第杯31。 One of the Faraday cups 31 (that is, the Faraday cup 1) is installed on the corner of the L-shaped frame, and N Faraday cups 31 are respectively installed on the two right-angled sides of the L-shaped frame.
其中一條直角邊上的N個法拉第杯31分別為法拉第杯2、法拉第杯3、法拉第杯4、法拉第杯5、法拉第杯6和法拉第杯7。
The N Faraday cups 31 on one of the right-angled sides are respectively Faraday cup 2,
另外一條直角邊上的N個法拉第杯31分別為法拉第杯8、法拉第杯9、法拉第杯10、法拉第杯11、法拉第杯12和法拉第杯13。
The N Faraday cups 31 on the other right-angled side are Faraday cup 8 ,
2N個法拉第杯31位於屏柵12的不同半徑位置處,且分別與N個屏柵環狀孔的位置相對應。也即法拉第杯2和法拉第杯8與2.35mm的屏柵環狀孔相對應,法拉第杯3和法拉第杯9與
2.47mm的屏柵環狀孔相對應,法拉第杯4和法拉第杯10與2.63mm的屏柵環狀孔相對應,法拉第杯5和法拉第杯11與2.72mm的屏柵環狀孔相對應,法拉第杯6和法拉第杯12與2.91mm的屏柵環狀孔相對應,法拉第杯7和法拉第杯13與3.13mm的屏柵環狀孔相對應。本實施例,能進行多點取樣測量,使得均勻性調節更加準確。
The 2N Faraday cups 31 are located at different radial positions of the
上述所有擋片驅動裝置和所有法拉第杯31均與驅動裝置控制器相連接。 All above-mentioned shutter driving devices and all Faraday cups 31 are connected with the driving device controller.
一種電漿密度控制方法,包括如下步驟。 A plasma density control method includes the following steps.
步驟1,電漿訊號檢測:Step 1, plasma signal detection:
蝕刻前,擋板6在擋板驅動裝置61的驅動下,離開屏柵環狀孔。
Before etching, the
通過離子源控制器14打開離子源1,在離子源控制器14作用下,充入放電腔11內的Ar被電離形成電漿,屏柵12上加正電聚焦電漿,加速柵13加負電將離子呈束狀引出並加速,電漿以離子束形式引出,入射到法拉第杯組3,法拉第杯組3上分佈的若干法拉第杯31,法拉第杯31將注入的離子束數量轉化為電流訊號,並反饋到驅動裝置控制器7。
The ion source 1 is turned on by the
步驟2,電漿密度均勻性判斷:Step 2, plasma density uniformity judgment:
當法拉第組3將電流訊號反饋到驅動裝置控制器7時,驅動裝置控制器7對電流訊號進行對比,電流大的區域電漿密度較高,電流小的區域電漿的密度較低。
When the
驅動裝置控制器7選擇最大電流和最小電流進行對比,當最大電流與最小電流的差值小於設定值時,表示引出的離子束密度均勻,此種狀態下可以保證蝕刻晶圓5時均勻性良好,在擋板驅動裝置61作用下,擋板6遮擋離子束,待晶圓被放置在下電極4上,並旋轉到蝕刻位置時,擋板6落下,離子束對晶圓5進行蝕刻。
The
當最大電流與最小電流的差值大於設定值時,代表引出的離子束密度分佈不均勻。 When the difference between the maximum current and the minimum current is greater than the set value, it means that the density distribution of the extracted ion beam is not uniform.
步驟3,電漿密度控制,具體包括如下步驟:
步驟31,確定遮擋時機:當步驟2判斷為電漿密度不均勻時,驅動裝置控制器7同時讀取最大電流對應的法拉第杯31。
步驟32,遮擋:驅動裝置控制器7根據最大電流對應的法拉第杯31所處位置,確定啟用的擋片組件,在擋片驅動裝置的控制下旋轉擋片,對電漿體密度高的區域進行遮擋。其中,當擋片旋轉至徑向時,與最大電流法拉第杯對應的寬度最大。此處的寬度是指擋片遮擋電漿密度的寬度。
Step 32, shielding: the
即驅動裝置控制器7會控制第一擋片驅動裝置71或第二擋片驅動裝置72帶動第一擋片81或第二擋片82對電漿密度高的區域進行遮擋,降低局部電漿密度,使晶圓達到蝕刻均勻的效果。
That is, the
在本實施例中,具體優選遮擋方法為:In this embodiment, the specific preferred occlusion method is:
步驟32A,當最大電流對應的法拉第杯31位於邊緣處時,驅動裝置控制器7控制第二擋片驅動裝置72帶動第二擋片82
進行遮擋。
Step 32A, when the
步驟32B,當最大電流對應的法拉第杯31在靠近內側中心時,驅動裝置控制器7控制第一擋片驅動裝置71帶動第一擋片81進行遮擋。
Step 32B, when the
步驟33,電漿密度再次檢測:在擋片旋轉遮擋的同時,法拉第杯31實時檢測電漿密度,驅動裝置控制器7按照步驟2進行電漿密度均勻性的判斷,直至電漿密度均勻,擋片停止旋轉。
Step 33, the plasma density is detected again: while the blocker rotates to block, the
如圖13所示,當最大電流對應的法拉第杯31位於邊緣處時,第二擋片驅動裝置72旋轉90°後,邊緣電漿密度仍然最大且電漿密度均勻性判斷為不均勻時,驅動裝置控制器7將控制第一擋片驅動裝置71進行運動,以遮蔽更多的邊緣電漿,直至電漿密度均勻。
As shown in Figure 13, when the
從理論和製程上看,晶圓5蝕刻速度中間區域要小於邊緣區域,法拉第杯2以內的電流密度為最低,蝕刻速率較快的區域一般集中於法拉第杯3到法拉第杯7所在的半徑區間內,當法拉第組3將電流訊號反饋到驅動裝置控制器7時,驅動裝置控制器7同時讀取最大電流對應的法拉第杯,當最大電流對應的法拉第杯31在邊緣處時,例如法拉第杯7,驅動裝置控制器7控制第二擋片驅動裝置72帶動第二擋片82進行遮擋,直至電漿密度均勻。若當第二擋片驅動裝置72旋轉90°後仍無法降低邊緣電漿密度,驅動裝置控制器7會依次控制第一擋片驅動裝置71進行運動,以遮蔽更多的電漿。第二擋片82的形式應為邊緣寬,中心窄
的樣式。
From the perspective of theory and process, the etching rate of
當最大電流對應的法拉第杯31在靠近內側時,例如法拉第杯3,此時驅動裝置控制器7控制第一擋片驅動裝置71帶動第一擋片81進行遮擋,直至最大電流區域不在此範圍內。此時,第一擋片81的樣式應選擇為中間寬,邊緣窄的樣式。擋片數量及大小設置可根據製程測試結果進行設計。
When the
以上詳細描述了本申請的優選實施方式,但是,本申請並不限於上述實施方式中的具體細節,在本申請的技術構思範圍內,可以對本申請的技術方案進行多種等同變換,這些等同變換均屬於本申請的保護範圍。 The preferred embodiments of the present application have been described in detail above, but the present application is not limited to the specific details in the above-mentioned embodiments. Within the scope of the technical concept of the present application, various equivalent transformations can be performed on the technical solutions of the present application, and these equivalent transformations are all Belong to the protection scope of this application.
1:離子源 1: ion source
2:反應腔室 2: Reaction chamber
3:法拉第杯組 3: Faraday Cup Group
31:法拉第杯 31: Faraday Cup
4:下電極 4: Bottom electrode
5:晶圓 5: Wafer
6:擋板 6: Baffle
61:擋板驅動裝置 61: Baffle driving device
7:驅動裝置控制器 7: Drive controller
71:第一擋片驅動裝置 71: The first block drive device
11:放電腔 11: discharge cavity
12:屏柵 12: screen grid
13:加速柵 13: Acceleration grid
14:離子源控制器 14: Ion source controller
Claims (10)
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