TWI803809B - Parametric Analysis Method for Electrostatic Chuck - Google Patents

Abstract

The purpose of the present invention is to provide a parameter analysis method for an electrostatic chuck, which can reduce errors in inputting parameter data and standardize the shipping inspection process. The parameter analysis method for the electrostatic chuck of the present invention comprises the following steps: the step of setting the electrostatic chuck in the simulated reaction chamber; the step of performing simulation and collecting the data of the parameters of the electrostatic chuck; the collected data of the parameters of the electrostatic chuck The step of creating a database; the step of comparing the completed database with the pre-made standard shipping specification database; and the step of outputting the result of the comparison.

Description

Parametric Analysis Method for Electrostatic Chuck

The invention relates to a parameter analysis method for an electrostatic chuck.

In the past, the electrostatic chuck shipment inspection was done by installing the electrostatic chuck into the simulated cavity, collecting the data of the electrostatic chuck parameters, and then inputting the parameter data into the database for comparison by the operator to determine whether the electrostatic chuck meets the requirements. Shipping standard.

However, using an operator to input data not only has the risk of human error but also takes time, and requires assigning manpower to perform the input operation, which has a high labor cost.

The present invention is made in view of the above problems, and its purpose is to provide a parameter analysis method for an electrostatic chuck, which can reduce errors in inputting parameter data and standardize the shipping inspection process.

According to an embodiment of the present invention, the parameter analysis method for an electrostatic chuck includes the following steps: a step of setting the electrostatic chuck in a simulated reaction chamber; a step of performing simulation and collecting data of parameters of the electrostatic chuck; The step of making the obtained parameter data of the electrostatic chuck into a database; the step of comparing the completed database with the pre-made standard shipping specification database; and the step of outputting the result of the comparison.

1: Electrostatic chuck shipment inspection system

2: Electrostatic chuck

10: Simulated reaction chamber

20: Control device

30: Database

S1~S5: steps

According to an embodiment of the present invention, FIG. 1 is a schematic diagram showing an electrostatic chuck delivery inspection system.

According to an embodiment of the present invention, FIG. 2 is a flowchart showing a parameter analysis method for an electrostatic chuck.

According to the embodiment of the present invention, FIG. 3 is a schematic diagram showing the dynamic data collected by the control device of the present invention.

According to an embodiment of the present invention, FIG. 1 is a schematic diagram showing an electrostatic chuck shipment inspection system 1 . As shown in FIG. 1 , the electrostatic chuck shipment inspection system 1 includes a simulated reaction chamber 10 and a control device 20 .

The simulated reaction chamber 10 is used for setting the electrostatic chuck 2 and has a simulated plasma loop to simulate a plasma environment. Since the electrostatic chuck 2 cannot be sold as a new product as long as it has been used in a plasma environment, it is necessary to test the electrostatic chuck 2 with a simulated reaction chamber 10 that does not generate real plasma during shipment inspection.

The control device 20 is, for example, a computer, which has storage units such as a CPU, a memory, and a hard disk, and input and output interfaces. A program for causing the CPU to execute a parameter analysis method for the electrostatic chuck is stored in the storage unit. The program can be stored in a computer-readable recording medium, loaded from the recording medium into the computer's storage unit, or downloaded to the computer via the Internet. The input/output interface includes, for example, a keyboard, a mouse, etc. as an input interface, and, for example, includes a display or the like as an output interface. The user can input data into the computer through the input interface, and can receive the data transmitted from the computer through the output interface.

FIG. 2 is a flowchart showing a parametric analysis method for an electrostatic chuck. Next, the parameter analysis method for the electrostatic chuck of the present invention will be described with reference to FIG. 2 .

As shown in FIG. 2 , firstly, the electrostatic chuck 2 to be inspected for shipment is installed in the simulated reaction chamber 10 (step S1 ). When the electrostatic chuck 2 is placed in the simulated reaction chamber 10 , the fixing screws must be tightened evenly, that is, the fixing screws must be locked in turn. In addition, an O-ring (O-ring) is provided between the electrostatic chuck 2 and the simulated reaction chamber 10. It is necessary to confirm whether the O-ring is damaged during installation. If the O-ring is damaged, the simulation will be performed. This will result in incorrect results for subsequent checks.

Next, the simulated reaction chamber 10 is started to simulate the plasma environment, and the data of the parameters of the electrostatic chuck is collected through the control device 20 (step S2). The electrostatic chuck parameters at least include: impedance coefficient, helium gas leakage rate, thermal conductivity, surface roughness, flatness and leakage rate, etc. The following describes the use of electrostatic chuck parameters.

Impedance coefficient: Since the electrostatic chuck 2 needs to provide high voltage to generate static electricity, the insulation resistance can provide users with early prevention of arc breakdown.

Helium gas leakage rate: Helium gas is mainly used for cooling the wafer. If the electrostatic chuck 2 and the wafer cannot be tightly sealed, a large amount of helium gas will leak, which will affect the cooling effect of the wafer. If there is an abnormality in the temperature, it will affect the yield of the wafer.

Thermal conductivity: Since there is a heating device embedded in the electrostatic chuck 2, if the thermal conductivity of a certain area in the electrostatic chuck 2 is abnormal, it will affect the etching effect, and then relatively affect the yield of the wafer.

Surface roughness: The surface of the electrostatic chuck 2 is inspected microscopically. If the surface roughness is high, it means that the distance between the peak and the trough of the surface of the electrostatic chuck 2 is relatively large, and helium gas leakage is more likely to occur.

Flatness: If the flatness is large, the height fluctuation will be large. When the wafer is placed on the electrostatic chuck 2, there will be gaps easily, which will cause helium gas leakage.

Leakage rate: It is inversely proportional to the impedance coefficient, and it can also provide users with early prevention of arc breakdown.

FIG. 3 is a schematic diagram showing the dynamic data collected by the control device 20 of the present invention. In step S2, the control device 20 collects the data of the parameters of the electrostatic chuck, and makes the collected data into a line graph. For example, the control device 20 continuously collects the dynamic data of each electrostatic chuck parameter during the period, and makes the collected dynamic data of each electrostatic chuck parameter into a line graph. The above-mentioned period can be adjusted by itself, for example, 5 minutes or 30 minutes, and the interval for collecting dynamic data during the above-mentioned period can be adjusted by itself, for example, 1 second or 5 seconds.

Next, the collected electrostatic chuck parameter data is created into a database 30 (step S3). Specifically, the data of the parameters of the electrostatic chuck collected by the control device 20 and the data of the line chart made from the dynamic data are stored in the database 30 .

Next, the control device 20 compares the database 30 created in step S3 with the standard shipping specification database. Specifically, it compares the "data of each electrostatic chuck parameter in the database 30" with the "data of corresponding parameters in the standard shipping specification database", and judges whether the electrostatic chuck 2 to be tested conforms to the standard specification. cargo standard.

Finally, the control device 20 outputs the compared result. Specifically, as shown in Table 1 below, the control device 20 outputs the judgment results of each electrostatic chuck parameter to an output interface such as a display. In Table 1, it shows that the measured values of all parameters are within the specifications, but for example, in the dynamic data of surface roughness in Figure 3, one measured value exceeds the upper limit of the specification, so this measured value will be judged as unqualified. Additional tests will then be required. At this point, a series of parameter analysis methods for the electrostatic chuck ends.

*1: After selecting 25 points on the surface of the electrostatic chuck 2 for measurement, take the average value as the surface roughness. The measurement points and the number of samples are not fixed and can be adjusted according to the situation.

*2: After selecting 25 points on the surface of the electrostatic chuck 2 for measurement, take the difference between the highest point and the lowest point as the flatness. The measurement points and the number of samples are not fixed and can be adjusted according to the situation.

The above conditions and specifications are just examples, and different conditions and specifications can be set according to the actual situation.

As mentioned above, since the steps of the parameter analysis method for the electrostatic chuck are executed by the control device 20, errors in the process can be effectively reduced, and the entire shipment inspection can be standardized.

Above, preferred embodiments of the present invention have been described with reference to the attached drawings, but the present invention is not limited to the above-mentioned embodiments. We should understand that as long as one has ordinary knowledge in the technical field, he can conceive of various modifications or amendments within the scope of the thought described in the scope of the patent application, and these modifications or amendments also belong to this patent. The technical scope of the invention.

S1~S5: steps

Claims (2)

A parameter analysis method for an electrostatic chuck, which includes the following steps: a step of setting the electrostatic chuck in a simulated reaction chamber; a step of performing simulation and collecting data of parameters of the electrostatic chuck; collecting the collected data of the parameters of the electrostatic chuck The steps of making a database; the step of comparing the completed database with the pre-made standard shipping specification database; and the step of outputting the result of the comparison; the simulated reaction chamber system is used to simulate the Plasma environment; the above step of simulating and collecting the data of the electrostatic chuck parameters is to collect dynamic data; the electrostatic chuck parameters include: impedance coefficient, helium leakage rate, thermal conductivity, surface roughness, flatness and leakage rate. The parameter analysis method for an electrostatic chuck as described in claim 1, wherein the database stores the collected data of each parameter of the electrostatic chuck into a line graph.

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