TWI801234B - Circuit structure, semiconductor device and method of fabricating the same - Google Patents

Circuit structure, semiconductor device and method of fabricating the same Download PDF

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Publication number
TWI801234B
TWI801234B TW111116897A TW111116897A TWI801234B TW I801234 B TWI801234 B TW I801234B TW 111116897 A TW111116897 A TW 111116897A TW 111116897 A TW111116897 A TW 111116897A TW I801234 B TWI801234 B TW I801234B
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TW
Taiwan
Prior art keywords
fabricating
semiconductor device
same
circuit structure
circuit
Prior art date
Application number
TW111116897A
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Chinese (zh)
Other versions
TW202345359A (en
Inventor
梁立言
Original Assignee
旺宏電子股份有限公司
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Publication date
Application filed by 旺宏電子股份有限公司 filed Critical 旺宏電子股份有限公司
Priority to TW111116897A priority Critical patent/TWI801234B/en
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Publication of TWI801234B publication Critical patent/TWI801234B/en
Publication of TW202345359A publication Critical patent/TW202345359A/en

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TW111116897A 2022-05-05 2022-05-05 Circuit structure, semiconductor device and method of fabricating the same TWI801234B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW111116897A TWI801234B (en) 2022-05-05 2022-05-05 Circuit structure, semiconductor device and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW111116897A TWI801234B (en) 2022-05-05 2022-05-05 Circuit structure, semiconductor device and method of fabricating the same

Publications (2)

Publication Number Publication Date
TWI801234B true TWI801234B (en) 2023-05-01
TW202345359A TW202345359A (en) 2023-11-16

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TW111116897A TWI801234B (en) 2022-05-05 2022-05-05 Circuit structure, semiconductor device and method of fabricating the same

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TW (1) TWI801234B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI849885B (en) * 2023-05-04 2024-07-21 旺宏電子股份有限公司 Semiconductor device and method of fabricating the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180247953A1 (en) * 2016-05-23 2018-08-30 SK Hynix Inc. Semiconductor device and manufacturing method thereof
US20190019804A1 (en) * 2015-04-01 2019-01-17 Samsung Electronics Co., Ltd. Three-dimensional semiconductor devices
TW202147581A (en) * 2020-04-17 2021-12-16 美商美光科技公司 Electronic devices including pillars in array regions and non-array regions, and related systems and methods
TWI759015B (en) * 2020-12-17 2022-03-21 旺宏電子股份有限公司 Three-dimensional memory device and method for manufacturing the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190019804A1 (en) * 2015-04-01 2019-01-17 Samsung Electronics Co., Ltd. Three-dimensional semiconductor devices
US20180247953A1 (en) * 2016-05-23 2018-08-30 SK Hynix Inc. Semiconductor device and manufacturing method thereof
TW202147581A (en) * 2020-04-17 2021-12-16 美商美光科技公司 Electronic devices including pillars in array regions and non-array regions, and related systems and methods
TWI759015B (en) * 2020-12-17 2022-03-21 旺宏電子股份有限公司 Three-dimensional memory device and method for manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI849885B (en) * 2023-05-04 2024-07-21 旺宏電子股份有限公司 Semiconductor device and method of fabricating the same

Also Published As

Publication number Publication date
TW202345359A (en) 2023-11-16

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